JP6282589B2 - Module and manufacturing method thereof - Google Patents

Description

  The present invention relates to a module in which a semiconductor substrate and connection terminals are arranged on one main surface of a wiring board, and a method for manufacturing the module.

  In recent years, with the reduction in size and thickness of mobile terminal devices such as mobile phones, there is a demand for downsizing of modules mounted thereon. Therefore, conventionally, as shown in FIG. 5, a semiconductor substrate 102 mounted face down (flip chip mounting) on one main surface of a wiring substrate 101 constituting the module 100, and the same main surface as the semiconductor substrate 102 There has been proposed a module including a columnar connection terminal 103 disposed on top and a resin layer 104 covering the semiconductor substrate 102 and the columnar connection terminal 103 (Patent Document 1).

  In this case, after forming the columnar connection terminals 103 on one main surface of the module 100, the semiconductor substrate 102 is flip-chip mounted, and the resin layer 104 covering the semiconductor substrate 102 and the connection terminals 103 is further formed. . Then, the module 100 is formed by polishing the resin layer 104 and the upper surface of the semiconductor substrate 102 so that the end surface of the connection terminal 103 is exposed from the upper surface of the resin layer 104.

  The semiconductor substrate 102 to be flip-chip mounted has a circuit formed on the surface facing the wiring substrate 101, and the upper surface of the semiconductor substrate 102 (the surface not facing the wiring substrate) is polished so that the characteristics of the semiconductor substrate 102 can be obtained. Therefore, the module 100 can be reduced in height by polishing the resin layer 104 and the semiconductor substrate 102 until the end face of the connection terminal 103 is exposed. Further, since the upper surface of the semiconductor substrate 102 having a higher thermal conductivity than the resin of the resin layer 104 is exposed from the surface of the resin layer 104, the heat dissipation characteristics of the module 100 are also improved.

Japanese Patent Laid-Open No. 2002-343904 (see paragraph 0013, FIG. 1, etc.)

  However, in the above-described prior art, only the upper surface of the semiconductor substrate 102 is exposed from the resin layer 104, and therefore, when a semiconductor substrate with high heat generation (for example, a power amplifier IC used in a high frequency module or the like) is mounted. In addition, there is a risk that the semiconductor substrate 102 malfunctions due to insufficient heat dissipation.

  The present invention has been made in view of the above-described problems. It is an object of the present invention to provide a module having excellent heat dissipation characteristics and a method for manufacturing the module.

In order to achieve the above-described object, the module of the present invention includes a wiring board, a semiconductor substrate mounted on one main surface of the wiring board, a component mounted on the other main surface of the wiring board, and the wiring Column-shaped connection terminals erected on the one main surface of the substrate, one end including the main surface on the opposite side of the one main surface of the wiring substrate of the semiconductor substrate, and the one end as the one end portion is an end portion of one main surface and an opposite side of said wiring board connection terminals are exposed, and a resin layer covering a part of the side surface of the semiconductor substrate and the connecting terminal, the other main A resin layer that is provided on a surface and covers the component ; both of the semiconductor substrate and the connection terminal are partially exposed, and the semiconductor substrate and the connection terminal of the wiring substrate On the other hand, the height from the main surface Height, the other main surface rather lower than the height of the linear expansion coefficient of the resin forming the resin layer provided on the other main surface of the wiring substrate of the component is provided on the one main surface It is characterized in smaller Ikoto than the linear expansion coefficient of the resin forming the resin layer.

  With this configuration, not only one side of the semiconductor substrate having a higher thermal conductivity than the resin layer but also part of the side surface is exposed from the surface of the resin layer, so that only one side of the semiconductor substrate is exposed from the resin layer. Compared with a conventional module, the heat dissipation characteristics of the module can be improved.

Further, the connection terminal allows the module to be connected to an external mother board or the like. Further, since the connection terminal having a high thermal conductivity is exposed from the surface of the resin layer, the heat generated from the module can be dissipated from the connection terminal, thereby further improving the heat dissipation characteristics of the module. Of the semiconductor substrate and the connection terminals mounted on one main surface of the wiring board, the higher one from the one main surface of the wiring board is higher than the height from the other main surface of the wiring board of the component. Therefore, the thickness of the resin layer provided on the other main surface of the wiring board is larger than the thickness of the resin layer provided on the one main surface of the wiring board. Thus, if there is a difference in the thickness of the resin layers provided on both main surfaces of the wiring board, the wiring board may be warped, but it is provided on the other main surface which is the thicker resin layer. Since the resin that forms the resin layer has a smaller linear expansion coefficient than the resin that forms the resin layer provided on the one main surface, warping of the wiring board can be suppressed.

  In addition, since the side surface of the connection terminal is exposed from the surface of the resin layer, when connecting the module and the mother board with solder, the solder forms a fillet shape in a state of spreading to the side surface of the connection terminal. The connection strength with the mother board is improved.

Further, the one height from the main surface of the wiring substrate of the end face of the one end portion side of the connection terminals, so as to be higher than the height from the one main surface of said main surface of said semiconductor substrate Also good. In this way, when the module is connected to an external mother board or the like, the module and the mother board can be easily connected without interfering with the semiconductor substrate.

Moreover, the the one height from the main surface of the wiring board of the main surface of the semiconductor substrate, so as to be higher than the height from the one main surface of the end face of the one end portion side of the connecting terminal Also good. In this case, when the module is connected to a mother board or the like, the distance between one surface of the semiconductor substrate and the mother board is shortened, so that the heat generated from the module passes through the planar ground electrode or the like formed on the mother board. Heat dissipation, and the heat dissipation characteristics of the module are improved.

  In addition, when the mother board and the connection terminal are connected by solder, the distance between the mother board and the connection terminal is larger than the distance between the mother board and the semiconductor substrate, so a gap is formed between the mother board and the connection terminal. can do. In this case, the solder that connects the mother board and the connection terminal is not pressed down, and the solder does not easily protrude from the connection portion, so that a short circuit between the solder and the adjacent terminal (for example, the adjacent connection terminal) is prevented. be able to.

The contact portion between the semiconductor substrate of the surface of the resin layer, wherein it is preferably formed toward the resin layer fillet-shaped flared from the end edge of the main surface side of the side surface of the semiconductor substrate. In this way, the stress applied to the contact portion between the surface of the resin layer and the semiconductor substrate is dispersed by the resin formed in a fillet shape, so that the resin of the resin layer can be prevented from peeling from the semiconductor substrate.

  Moreover, the corner | angular part of the part protruded from the surface of the said resin layer of the said semiconductor substrate may be chamfered. By comprising in this way, a crack and a chip | tip of a semiconductor substrate can be suppressed.

Further, irregularities on the main surface of the semiconductor substrate may be formed. If unevenness is formed on one surface of the semiconductor substrate exposed from the resin layer, the surface area (exposed portion) of the semiconductor substrate having a high thermal conductivity increases, so that the heat dissipation characteristics can be further improved.

At least a part of the metal film of the main surface of the front Symbol semiconductor substrate may be formed. In this case, the heat dissipation characteristics of the module are further improved by the metal film having a higher thermal conductivity than the semiconductor substrate. Also, by using the metal film as an electrode for connection with an external mother board, etc., the module and the mother board can be connected with the connection terminal and the metal film. The connection strength can be improved.

  Further, irregularities may be formed on the surface of the metal film. In this case, since the surface area of the metal film is increased, the heat dissipation characteristics of the module are further improved. Also, when the metal film is used as an electrode for connection with the mother board, the connection area increases, so that the connection strength between the module and the mother board can be improved.

The module manufacturing method includes a wiring board, a semiconductor substrate mounted on one main surface of the wiring board, a component mounted on the other main surface of the wiring board, and the one main surface of the wiring board. A module body comprising a columnar connection terminal erected, a resin layer provided on the one main surface that covers the semiconductor substrate, and a resin layer provided on the other main surface that covers the component A preparatory step to prepare; one end including a main surface opposite to the one main surface of the wiring substrate of the semiconductor substrate from the surface of the resin layer and the one main surface of the wiring substrate opposite to the one main surface of the wiring substrate And a removing step of removing a part of the module element body by polishing or grinding the surface of the resin layer so that one end which is an end on the side is exposed, and is provided on the other main surface Linear expansion coefficient of the resin forming the layer , The one smaller than the linear expansion coefficient of the resin forming the resin layer provided on the major surface, said removing step, together with a part of the semiconductor substrate and the connection terminals each side is exposed, said semiconductor substrate and Of the connection terminals, the height of the higher one from the one main surface of the wiring board is lower than the height of the component from the other main surface of the wiring board. It is characterized by polishing or grinding the surface.

  By manufacturing the module in this way, a resin layer covering a part of the side surface of the semiconductor substrate can be formed so that the end portion on the one surface side of the semiconductor substrate is exposed, so that the heat dissipation characteristics are excellent. Modules can be manufactured.

Further, by standing on the columnar connection terminal resin layer, it is possible to manufacture a module that has excellent heat dissipation characteristics and can be connected to an external mother board. In addition, when one end (including the side surface) of the connection terminal is exposed from the surface of the resin layer, when the module and the mother substrate are connected by solder, the solder spreads to the side surface of the connection terminal. A module with high connection strength can be manufactured. Further, since the resin forming the resin layer provided on the other main surface which is the thicker resin layer has a smaller linear expansion coefficient than the resin forming the resin layer provided on the one main surface, the wiring board Can be suppressed.

Further, in the removing step, the height from the one main surface of the wiring substrate of the end face of the one end portion side of the connecting terminal, than the height from the one main surface of said main surface of said semiconductor substrate You may manufacture a module so that it may become high. In this way, a module that can be easily connected to an external mother board can be manufactured.

Further, in the removing step, the height from the one main surface of the wiring board of the main surface of the semiconductor substrate, than the height from the one main surface of the end face of the one end portion side of the connecting terminal You may manufacture a module so that it may become high. In this way, when the mother board and the module (connection terminal) are connected, the distance between the mother board and the semiconductor substrate is shortened, so that the heat generated from the module is transmitted via the ground electrode of the mother board and the like. A module that can easily dissipate heat can be manufactured.

  In addition, since the distance between the mother substrate and the connection terminal is larger than the distance between the mother substrate and the semiconductor substrate, a gap can be formed between the mother substrate and the connection terminal. In this way, the solder that joins the mother board and the connection terminal is not pressed down, and the solder hardly protrudes from the joined portion, so that a module that can prevent a short circuit with the adjacent terminal can be manufactured.

  According to the present invention, the resin layer that covers a part of the side surface of each of the semiconductor substrate and the connection terminal is formed so that the end portion on the one surface side of the semiconductor substrate disposed on the one main surface of the wiring substrate is exposed. As a result, compared with a conventional module in which only one surface of the semiconductor substrate is exposed, the heat dissipation characteristics of the module can be improved.

It is a cutting | disconnection front view of the module mounting apparatus with which the module concerning one Embodiment of this invention was mounted. It is an enlarged view of the A area | region of FIG. It is explanatory drawing of the manufacturing method of the module of FIG. It is explanatory drawing of the manufacturing method of the module of FIG. It is sectional drawing of the conventional module.

(Configuration of module mounting device)
A module mounting apparatus 1 on which a module 2 according to an embodiment of the present invention is mounted will be described with reference to FIG. FIG. 1 is a cut front view of the module mounting apparatus 1 on which the module 2 is mounted.

  As shown in FIG. 1, a module mounting apparatus 1 on which a module 2 according to this embodiment is mounted includes a mother board 3, a module 2 mounted on the mother board 3, and a connecting portion between the mother board 3 and the module 2. And an underfill resin layer 4 made of a resin, for example, and mounted on an electronic device using a high frequency such as a mobile phone.

  The mother board 3 has a ground electrode 5 for grounding and wiring patterns (not shown) constituting various circuits, and the ground electrode 5 and the wiring pattern are formed in a predetermined wiring pattern or mother board 3 by a via conductor 6 or the like. Are connected to the mounting electrodes 7 formed on the front and back surfaces. In this embodiment, the ground electrode 5 formed on the mother substrate 3 is connected to the mounting electrode 7 connected to the columnar connection terminal 8 of the module 2 described later and the metal film 10 formed on the lower surface 9a of the semiconductor substrate 9. It is connected via a conductor 6. The mother substrate 3 is formed of a material such as glass epoxy resin or ceramic.

  The underfill resin layer 4 is made of, for example, an epoxy resin, and is formed by filling a resin so as to fill a gap between the mother substrate 3 and the module 2 when the module 2 is mounted on the mother substrate 3. The The underfill resin layer 4 may be omitted.

(Configuration of module 2)
Next, the module 2 according to this embodiment will be described with reference to FIGS. FIG. 2 is an enlarged view of area A in FIG.

  As shown in FIG. 1, the module 2 includes a wiring board 11, a semiconductor substrate 9 mounted on one main surface 11 a of the wiring board 11, a column-shaped connection terminal 8 erected, and the other main board 11 of the wiring board 11. Chip components 12a, 12b, and 12c mounted on the surface 11b, a resin layer 13a that covers the semiconductor substrate 9 and the connection terminals 8 on one main surface 11a of the wiring substrate 11, and a chip component on the other main surface 11b of the wiring substrate 11 Examples of the module include a Bluetooth (registered trademark) module, a wireless LAN module, and an antenna switch module disposed immediately below the antenna of the mobile phone.

  The wiring substrate 11 is formed of a glass epoxy resin substrate, a low-temperature co-fired ceramic (LTCC) substrate, a glass substrate, and the like, and both main surfaces 11a and 11b have mounting electrodes 15 and electrodes 15a for forming connection terminals 8; A wiring pattern (not shown) and the like are formed, and a ground electrode 14 for grounding, another wiring pattern (not shown), a via conductor (not shown) and the like are formed inside. Note that the wiring board 11 may be either a single layer board or a multilayer board.

  For example, when the wiring substrate 11 is an LTCC multilayer substrate, a ceramic green sheet in which a slurry in which a mixed powder such as alumina and glass is mixed with an organic binder and a solvent is formed into a sheet is formed. Via holes are formed at predetermined positions of the ceramic green sheet by laser processing, etc., and the formed via holes are filled with a conductor paste containing Ag, Cu, etc., and via conductors for interlayer connection are formed, and printing by the conductor paste is performed. Various electrode patterns are formed. Thereafter, the ceramic green sheets are laminated and pressed to form a ceramic laminate, which is fired at a low temperature of about 1000 ° C., so-called low temperature firing.

  Further, the semiconductor substrate 9 and the chip components 12a to 12c are mounted on both the main surfaces 11a and 11b of the wiring substrate 11 as mounting components. The semiconductor substrate 9 forms a system IC that processes, for example, an RF signal and a baseband signal by forming a predetermined electric circuit on the surface of the wiring substrate 11 that faces the one main surface 11a. On the other hand, face down mounting (flip chip mounting) is performed on the main surface 11a. The chip components 12a to 12c are composed of a chip capacitor, a chip inductor, and a chip resistor, and are mounted on the other main surface 11b of the wiring board 11 by a known surface mounting technique. The columnar (pin-shaped) connection terminals 8 are mainly composed of Cu, for example, and are mounted on the electrodes 15a formed on one main surface of the wiring board 11 via solder.

  In this case, only the flip-chip mounted semiconductor substrate 9 and the connection terminal 8 are arranged on the one main surface 11a of the wiring substrate 11, and the other main surface 11b of the wiring substrate 11 is mounted on the other main surface 11b except for the semiconductor substrate 9. Components (chip components 12a to 12c) are arranged. Further, a metal film 10 is formed on the lower surface 9 a (corresponding to one surface in the present invention) of the semiconductor substrate 9 and the lower end surface 8 a of the connection terminal 8. The metal film 10 is, for example, a Ni / Au film in which a Ni layer is formed on the lower surface 9a of the semiconductor substrate 9 (or the lower end surface 8a of the connection terminal 8), and an Au layer is formed on the Ni layer. .

  In addition, among the chip components 12a to 12c mounted on the other main surface 11b of the wiring board 11, there are those in which the height from the other main surface 11b of the wiring board 11 is different in the mounted state. In this embodiment, as shown in FIG. 1, the chip component 12a has the lowest height from the other main surface 11b of the wiring board 11 among all the chip components 12a to 12c. Further, each of the semiconductor substrate 9 and the connection terminal 8 is formed so that the height from the one main surface 11a of the wiring substrate 11 is the same in the mounted or standing state.

Further, the height Ht of the semiconductor substrate 9 (or connection terminal 8) having the highest height from the one main surface 11a of the wiring substrate 11 on the one main surface 11a of the wiring substrate 11 is the other main surface of the wiring substrate 11. 11b of the chip component 12a that other from the main surface 11b of the height H ₀ semiconductor substrate to be lower than the (other main surface tallest low chip component in 11b) 9 (or the connection terminal 8) is formed ing.

  Moreover, when each mounting component 9, 12a-12c is planarly viewed, the semiconductor substrate 9 has a larger area (cross-sectional area) than any of the other mounting components (each chip component 12a-12c). .

  The height of the lower end surface 8a (one surface side end surface) of the connection terminal 8 from the one main surface 11a of the wiring substrate 11 is from the one main surface 11a of the lower surface 9a (one surface side end surface) of the semiconductor substrate 9. The connection terminals 8 may be formed so as to be higher than the height. By forming the connection terminals 8 in this way, the semiconductor substrate 9 does not get in the way when the module 2 is mounted on the external mother substrate 3, and the mountability of the module 2 is improved.

  Further, the semiconductor substrate 9 is formed such that the height of the lower surface 9a of the semiconductor substrate 9 from the one main surface 11a of the wiring substrate 11 is higher than the height from the one main surface 11a of the lower end surface 8a of the connection terminal 8. It may be a configuration. In this case, when the module 2 is connected to the mother substrate 3, the distance between the lower surface 9 a of the semiconductor substrate 9 and the mother substrate 3 is shortened, so that the heat generated from the module 2 is formed on the surface of the mother substrate 3. It is easy to dissipate heat through the ground electrode 5 and the heat dissipation characteristics of the module 2 are improved.

  When the mother board 3 and the connection terminal 8 are connected by solder, the distance between the mother board and the connection terminal 8 is larger than the distance between the mother board and the semiconductor substrate 9. A gap can be formed between the two. In this case, the solder that connects the mother board and the connection terminal 8 is not pressed down, and the solder does not easily protrude from the connection portion, so that it is possible to prevent a short circuit between the connection terminal 8 and another adjacent terminal. it can.

  The resin layer 13a on the one principal surface 11a of the wiring board 11 is made of, for example, epoxy resin, and as shown in FIG. 1, the end on the lower surface 9a side of the semiconductor substrate 9 and the lower end of the connection terminal 8 (one in the present invention). Part of the side surfaces of the semiconductor substrate 9 and the connection terminal 8 are formed so as to be exposed). The end portion on the lower surface 9 a side of the semiconductor substrate 9 is a portion including the lower surface 9 a of the semiconductor substrate 9 and part of the side surface adjacent to the lower surface 9 a of the semiconductor substrate 9. That is, the resin layer 13a is formed so that the lower end portion of the semiconductor substrate 9 and the lower end portion of the connection terminal 8 protrude from the surface of the resin layer 13a.

  At this time, the contact portion 16 of the surface of the resin layer 13a with the semiconductor substrate 9 is, as shown in FIG. 2, from the edge of the side surface 9b of the semiconductor substrate 9 toward the resin layer 13a from the lower edge of the semiconductor substrate 9. It is formed in a fillet shape spreading at the bottom. Further, the corner portion 9c of the portion protruding from the surface of the resin layer 13a of the semiconductor substrate 9 is chamfered. These shapes can be formed by a removing step for removing the resin described later.

  The resin layer 13b on the other main surface 11b of the wiring board 11 is made of, for example, the same kind of epoxy resin as the resin layer 13a on the one main surface 11a, and the chip components 12a to 12c are not exposed as shown in FIG. It is formed in a state where all of the chip parts are covered.

  In addition, when the warp of the module 2 is large, such as when the thickness of the resin layer 13b side is sufficiently thick with respect to the thickness of the resin layer 13a side, the resin forming the resin layer 13b is a resin to suppress the warp. It is preferable to use a resin having a smaller linear expansion coefficient than the resin forming the layer 13a.

(Manufacturing method of module 2)
Next, a method for manufacturing the module 2 according to this embodiment will be described with reference to FIGS. 3 shows a part of each process for manufacturing the module 2, and FIG. 4 shows each process following FIG.

  First, as shown in FIG. 3A, a planar grounding ground electrode 14 and a wiring pattern are formed therein, and the semiconductor substrate 9 and the chip components 12a to 12c are formed on both main surfaces 11a and 11b. The wiring board 11 on which the mounting electrode 15 and the connection terminal forming electrode 15a are formed is prepared (wiring board preparation step).

  Next, as shown in FIG. 3B, the semiconductor substrate 9, the connection terminal 8, and the chip components 12a to 12c are mounted at positions corresponding to the mounting electrodes 15 of the wiring substrate 11 (component, connection terminal mounting). Process). At this time, the semiconductor component 9 is face-down mounted (flip chip mounting) on the one main surface 11a of the wiring substrate 11, and the chip components 12a to 12c are mounted on the other main surface 11b of the wiring substrate 11 by a known surface mounting technique. To do. Further, the pin-like connection terminals 8 are mounted on the electrodes 15 for forming the connection terminals of the wiring board 11 via solder. As the connection terminal 8, for example, a columnar metal made of Cu or an alloy containing Cu as a main component can be used.

  Next, as shown in FIG. 3C, a resin layer 13a covering the semiconductor substrate 9 and the connection terminals 8 is formed on one main surface 11a of the wiring substrate 11, and each chip component is formed on the other main surface 11b. A resin layer 13b covering 12a to 12c is formed (resin layer forming step). At this time, a resin is applied or printed on both the main surfaces 11a and 11b by using a dispensing method or a printing method, and put into an oven set at a predetermined curing temperature (for example, about 180 ° C. for an epoxy resin). For example, the resin is cured to form both resin layers 13a and 13b.

  In this way, the semiconductor substrate 9 and the columnar connection terminals 8 mounted on the one main surface 11a of the wiring substrate 11 and the semiconductor substrate 9 and the connection terminals 8 provided on the one main surface 11a of the wiring substrate 11 are covered. A resin layer 13a, chip components 12a to 12c mounted on the other main surface 11b of the wiring substrate 11, and a resin layer 13b covering the chip components 12a to 12c provided on the other main surface 11b of the wiring substrate 11 The module body 18 provided is manufactured.

  If a pin-shaped metal is used as the connection terminal 8 as described above, the connection terminal 8 can be easily mounted in the mounting process of the semiconductor substrate 9, but the method of forming the connection terminal 8 is the method described above. In addition, the columnar connection terminals 8 may be formed by plating before mounting the semiconductor substrate 9 on the one main surface 11a of the wiring substrate 11. In this case, the semiconductor substrate 9 is mounted after the connection terminal 8 is formed, and the resin layer 13a is formed by covering the connection terminal 8 with resin together with the semiconductor substrate 9 mounted on the one main surface 11a. According to this method, unlike the case where the pin-shaped connection terminal 8 is mounted, the solder for connecting the connection terminal is exposed from the resin layer 13a as described above even if the connection terminal 8 is polished or ground. There is no. Therefore, the connection terminals 8 having a fine diameter can be formed with high precision on the one main surface 11a of the wiring board 11, and the pitch of the connection terminals 8 can be reduced.

  In addition, after mounting the semiconductor substrate 9, the resin layer 13 a is formed before the connection terminals 8 are formed, and the surface of the connection terminal forming electrode 15 a is exposed by irradiating the surface of the resin layer 13 a with a laser. A recess for forming a connection terminal is formed in the resin layer 13a, and a conductive paste (for example, Ag paste or Cu paste) is filled in the recess by using a printing technique, or a conductor (for example, Cu) is formed by plating or the like. Alternatively, the columnar connection terminals 8 may be formed on the one main surface 11 a of the wiring substrate 11.

  In addition, the process (wiring board preparation process-resin layer formation process) of Fig.3 (a)-FIG.3 (c) corresponds to the preparation process in this invention.

  Next, as shown in FIG. 4A, the surface of the resin layer 13a of the module body 18 is polished so that the lower surface 9a of the semiconductor substrate 9 and the lower end of the connection terminal 8 are exposed from the surface of the resin layer 13a. Or it grinds and removes a part (removal process).

  For example, when the resin of the resin layer 13a is removed by polishing, it is preferably performed by lapping or sand blasting using loose abrasive grains. Since the resin of the resin layer 13a can be removed preferentially by adjusting the particle size, material, etc. of the loose abrasive grains, the end on the lower surface 9a side of the semiconductor substrate 9 and the lower end of the connection terminal 8 are exposed. As described above, it is possible to easily form the resin layer 13a that covers part of the side surfaces of the semiconductor substrate 9 and the connection terminal 8. In this step, the semiconductor substrate 9 and part of the lower end portion of the connection terminal 8 may be removed.

  Further, in the removal step, the corner portion 9c of the portion protruding from the surface of the resin layer 13a of the semiconductor substrate 9 is chamfered, and the contact portion 16 between the surface of the resin layer 13a and the semiconductor substrate 9 (side surface 9b) is replaced with the semiconductor substrate. 9 is formed in a fillet shape spreading toward the resin layer 13a from the edge of the side surface 9b on the lower surface 9a side of the semiconductor substrate 9 (see FIG. 2). In addition, the corner | angular part 9c does not need to be chamfered by adjusting the particle size, material, etc. of a loose abrasive grain, and the contact part 16 does not need to be made into a fillet shape. Further, the lower surface 9a of the semiconductor substrate 9 is polished or ground so as to be uneven. As described above, when unevenness is formed on the lower surface 9a of the semiconductor substrate 9, when the metal film 10 is formed on the lower surface 9a, the unevenness can be formed also on the metal film 10, and the thermal conductivity is high. The surface area of the metal film 10 can be increased.

  If the average roughness (Ra) of the lower surface 9a of the semiconductor substrate 9 is too small, it becomes difficult to form the metal film 10 on the lower surface 9a of the semiconductor substrate 9 by plating, and the average roughness (Ra) is reduced. Since the semiconductor substrate 9 may be damaged if the value is too large, the irregularities formed on the lower surface 9a of the semiconductor substrate 9 may be formed with an average surface roughness (Ra) in the range of 0.1 μm to 15 μm. preferable.

Further, in this embodiment, in the removing step, the semiconductor substrate 9 and the connection with the surface of the resin layer 13a so that the heights of the semiconductor substrate 9 and the connection terminal 8 from the one main surface 11a of the wiring substrate 11 are the same. The terminal 8 is polished or ground. Further, the height Ht of the semiconductor substrate 9 (or connection terminal 8) having the highest height from the one main surface 11a of the wiring substrate 11 is the chip component 12a having the lowest height from the other main surface 11b of the wiring substrate 11. polishing or grinding a semiconductor substrate 9 (or the connection terminal 8) to be lower than the height H ₀ of the.

  Note that, as described above, it is not always necessary to align the height of the semiconductor substrate 9 and the connection terminal 8 from the one main surface 11a of the wiring substrate 11, and the semiconductor substrate 9 (or the connection terminal) is set so that one of the heights is higher. 8) may be polished or ground. In this case, for example, the height of the semiconductor substrate 9 and the connection terminal 8 can be adjusted by adjusting the particle size, material, and the like of the loose abrasive used for polishing.

  Next, as shown in FIG. 4B, a metal film 10 is formed on the lower surface 9a of the semiconductor substrate 9 and the lower end surface 8a of the connection terminal 8 exposed from the surface of the resin layer 13a (metal film forming step). Module 2 is manufactured. At this time, the metal film 10 is formed using a plating process or a printing technique. For example, in the case of a plating process, a Ni layer is grown on the lower surface 9a of the semiconductor substrate 9 and the lower end surface 8a of the connection terminal 8, and an Au layer is grown thereon to form the metal film 10. The metal film 10 on the lower surface 9a of the semiconductor substrate 9 does not need to be formed on the entire surface of the lower surface 9a of the semiconductor substrate 9, and may be formed at least partially.

  When the module mounting apparatus 1 is manufactured, the lower surface 9a of the semiconductor substrate 9 is set so that the one main surface 11a of the wiring substrate 11 of the module 2 manufactured by the method for manufacturing the module 2 faces the mother substrate 3. In addition, the metal film 10 formed on the lower end surface 8a of the connection terminal 8 and the mounting electrode 7 formed on the surface of the mother substrate 3 are connected by soldering or the like.

  For example, when a conductive adhesive is used without connecting solder to the mother substrate 3 and the module 2, the metal substrate 10 is not formed on the semiconductor substrate 9 and the connection terminals 8. It is also possible to connect the module 2.

  Therefore, according to the above-described embodiment, only the semiconductor substrate 9 and the connection terminals 8 that are flip-chip mounted are disposed on the one main surface 11a of the wiring substrate 11, and a chip such as a chip capacitor is disposed on the other main surface 11b. Parts 12a-12c are arranged.

  In order to reduce the size of the module 2 (to reduce the mounting area of the wiring board 11), it is effective to dispose mounting components on both main surfaces 11a and 11b of the wiring board 11. Further, as in the prior art shown in FIG. 5, it is also effective to reduce the height of the module 2 by reducing the height by polishing the lower surface 9 a of the semiconductor substrate 9 together with the connection terminals 8. However, for example, when the semiconductor substrate 9 and the chip components 12a to 12c are mounted on the same main surface of the wiring substrate 11, the lower surface 9a of the semiconductor substrate 9 is polished to reduce the height of the module 2. It is difficult. This is because if the chip components 12a to 12c, which are chip capacitors and chip inductors, are scraped off by polishing or the like, the characteristics may be deteriorated. Therefore, with such a configuration, it is difficult to make the height of the semiconductor substrate 9 from the same main surface lower than the height of each of the chip components 12a to 12c mounted on the same main surface.

  Therefore, in this embodiment, as described above, only the flip-chip mounted semiconductor substrate 9 and the connection terminal 8 are disposed on the one main surface 11a of the wiring substrate 11 so that the characteristics are not deteriorated even when the lower surface 9a is polished. The chip parts 12 a to 12 b such as chip capacitors and chip inductors are arranged on the other main surface 11 b, and the surface of the resin layer 13 a on the one main surface 11 a of the wiring substrate 11 is polished or ground together with the semiconductor substrate 9 and the connection terminals 8. By doing so, a module configuration that can achieve a low profile of the module 2 was obtained.

Further, the height Ht of the semiconductor substrate 9 (or connection terminal 8) having the highest height from the one main surface 11a of the wiring substrate 11 is the chip component 12a having the lowest height from the other main surface 11b of the wiring substrate 11. for the height H ₀ semiconductor substrate 9 to be lower than (or connecting terminals 8) is polished or ground, it is possible to reduce the height of reliably module 2.

  Further, since the lower surface 9a of the semiconductor substrate 9 is exposed from the surface of the resin layer 13a, the module 2 is mounted on the mother substrate 3 as compared with the configuration of the module in which the lower surface 9a of the semiconductor substrate 9 is covered with the resin layer 13a. Sometimes, the distance between the lower surface 9a of the semiconductor substrate 9 and the planar ground electrode 5 formed on the mother substrate 3 is shortened, thereby improving the shielding characteristics of the semiconductor substrate 9. Further, when the distance between the lower surface 9a of the semiconductor substrate 9 and the ground electrode 5 of the mother substrate 3 is shortened, the heat generated from the module 2 is easily radiated through the ground electrode 5, so that the heat dissipation characteristics of the module 2 are improved. To do.

  Further, by polishing or grinding the surface of the resin layer 13a, the length of the connection terminal 8 connected to the ground electrode 5 of the mother board 3 (height from the one main surface 11a of the wiring board 11) can be shortened. The parasitic inductance due to the connection terminal 8 is reduced, and the ground can be strengthened.

  Further, when the resin layer 13a on the one main surface 11a of the wiring board 11 is polished in this way, the amount of resin forming the resin layer 13a is less than the amount of resin in the resin layer 13b on the other main surface 11b. Although the balance of the shrinkage stress generated in each of the resin layers 13a and 13b may be lost and the wiring board 11 may be warped, the semiconductor substrate 9 that is harder than the resin forming the both resin layers 13a and 13b has a wiring board 11 Of the mounting components 9, 12a to 12c mounted on the two main surfaces 11a and 11b, the one having the largest area (cross-sectional area) in plan view is used, and thus the shrinkage of both the resin layers 13a and 13b described above. Warpage of the wiring substrate 11 caused by the stress balance being lost can be suppressed.

  In addition, since the resin forming the resin layer 13b has a smaller linear expansion coefficient than the resin forming the resin layer 13a, warping of the wiring board 11 can be further suppressed.

  Further, on the one main surface 11a side of the wiring substrate 11, a part of each side surface of the semiconductor substrate 9 and the connection terminal 8 is formed so that the end portion on the lower surface 9a side of the semiconductor substrate 9 and the lower end portion of the connection terminal 8 are exposed. Since the resin layer 13a to be coated is formed, the lower end portion including the lower surface 9a of the semiconductor substrate 9 having higher thermal conductivity than the resin of the resin layer 13a is exposed, so that only the lower surface 9a of the semiconductor substrate 9 is conventionally provided. As compared with the module in which is exposed, the heat dissipation characteristics of the module 2 can be improved.

  As shown in FIG. 2, the contact portion 16 of the surface of the resin layer 13 a with the semiconductor substrate 9 (side surface 9 b) is resin from the edge of the side surface 9 b of the semiconductor substrate 9 on the lower surface 9 a side of the semiconductor substrate 9. Since it is formed in a fillet shape spreading toward the bottom toward the layer 13a, the stress applied to the contact portion 16 between the surface of the resin layer 13a and the semiconductor substrate 9 is dispersed by the resin formed in the fillet shape, and the resin of the resin layer 13a Can be prevented from peeling from the semiconductor substrate 9.

  In addition, as shown in FIG. 2, since the corner portion 9 c of the portion protruding from the surface of the resin layer 13 a of the semiconductor substrate 9 is chamfered by polishing or grinding, it is possible to suppress cracking or chipping of the semiconductor substrate 9. .

  Moreover, since the unevenness | corrugation is formed in the lower surface 9a of the semiconductor substrate 9, the surface area (part exposed from the resin layer 13a) of the semiconductor substrate 9 with high heat conductivity increases, and the thermal radiation characteristic of the module 2 improves.

  Further, since the metal film 10 is formed on at least a part of the lower surface 9a of the semiconductor substrate 9 exposed from the resin layer 13a, the metal film 10 having higher thermal conductivity than the semiconductor substrate 9 improves the heat dissipation characteristics of the module 2. To do. Further, by using the metal film 10 formed on the lower surface 9 a of the semiconductor substrate 9 as an electrode for connection with the mother substrate 3, the connection between the mother substrate 3 and the module 2 is connected to the connection terminal 8 and the metal film 10. Therefore, the connection strength between the mother board 3 and the module 2 can be improved.

  Moreover, since unevenness | corrugation is formed in the surface of the metal film 10 formed in the lower surface 9a of the semiconductor substrate 9, the surface area of the metal film 10 increases, and also the heat dissipation characteristic of the module 2 can be improved. Further, when the metal film 10 is used as an electrode for connection with the mother substrate 3, the connection area is increased, so that the connection strength between the module 2 and the mother substrate 3 can be improved.

  Further, the underfill resin layer 4 and the module when the module 2 is mounted on the mother substrate 3 by the end of the lower surface 9a side of the semiconductor substrate 9 and the lower end of the connection terminal 8 projecting from the surface of the resin layer 13a. Since the contact area with 2 is increased, the connection reliability between the mother board 3 and the module 2 is improved.

  Further, since the metal film 10 is formed of a Ni / Au film, the wettability of solder when the module 2 and the mother board 3 are connected by solder is improved.

  Moreover, since the lower surface 9a of the semiconductor substrate 9 is protected by forming the metal film 10 on the lower surface 9a of the semiconductor substrate 9, it is possible to prevent the semiconductor substrate 9 from being damaged by external stress or the like.

  The present invention is not limited to the above-described embodiments, and various modifications other than those described above can be made without departing from the spirit of the invention.

  For example, in each of the embodiments described above, there may be a plurality of semiconductor substrates 9 that are flip-chip mounted on the one main surface 11a of the wiring substrate 11. Further, the area of the semiconductor substrate 9 in plan view may be smaller than the area of any of the other mounted components. Further, if it is a mounted component in which the height after mounting is lower than the height of the semiconductor substrate 9 after polishing or grinding, it may be disposed on the one main surface 11a of the wiring substrate 11. That is, it is only necessary to mount or place the semiconductor substrate 9 whose lower surface 9a can be polished or ground on the one main surface 11a of the wiring substrate 11, and in order to reduce the mounting area of the wiring substrate 11, What is necessary is just to devise arrangement | positioning of each mounting component suitably.

  Further, only the chip components 12a to 12c such as chip capacitors and chip inductors are mounted on the other main surface 11b of the wiring board 11, but the other main surface 11b is the same as the semiconductor substrate 9 mounted on the one main surface 11a. Alternatively, a different semiconductor substrate 9 may be mounted.

  In addition, the number of connection terminals 8 formed on one main surface 11 a of the wiring board 11 may be any number, and the connection terminals 8 may be arranged on the other main surface 11 b of the wiring board 11. Further, the connection terminals 8 are not necessarily arranged on the one main surface 11 a of the wiring board 11. That is, the connection terminal 8 and the semiconductor substrate 9 may be disposed on different main surfaces of the wiring substrate 11.

  Further, a shield layer made of a metal film may be formed on at least one of the resin layer 13a and the resin layer 13b.

  Moreover, in each above-mentioned embodiment, the structure which does not mount each chip components 12a-12c on the other main surface 11b of the wiring board 11 may be sufficient.

  The present invention can be applied to various modules in which a semiconductor substrate and connection terminals are arranged on one main surface of a wiring board.

2 Module 8 Connection Terminal 9 Semiconductor Substrate 10 Metal Film 11 Wiring Board 13a, 13b Resin Layer 18 Module Element

Claims (11)

A wiring board;
A semiconductor substrate mounted on one main surface of the wiring board;
Components mounted on the other main surface of the wiring board;
Columnar connection terminals erected on the one main surface of the wiring board;
One end portion provided on the one main surface and including a main surface opposite to the one main surface of the wiring substrate of the semiconductor substrate and an end portion of the connection terminal opposite to the one main surface of the wiring substrate A resin layer covering a part of the side surface of the semiconductor substrate and the connection terminal, so that one end portion is exposed ;
A resin layer provided on the other main surface and covering the component ;
Each of the semiconductor substrate and the connection terminal is partially exposed.
Of the semiconductor substrate and the connection terminal, the height of the wiring substrate that is higher from the one main surface is lower than the height of the component from the other main surface of the wiring substrate.
The
The other linear expansion coefficient of the resin forming the resin layer provided on the main surface, the module, wherein the one smaller than the linear expansion coefficient of the resin forming the resin layer provided on the main surface Ikoto.   The height from the one main surface of the wiring board of the end surface on the one end portion side of the connection terminal is higher than the height from the one main surface of the main surface of the semiconductor substrate. Item 2. The module according to item 1.   The height of the main surface of the semiconductor substrate from the one main surface of the wiring substrate is higher than the height from the one main surface of the end surface on the one end side of the connection terminal. Item 2. The module according to item 1.   The contact portion of the surface of the resin layer with the semiconductor substrate is formed in a fillet shape that spreads from the edge of the main surface side of the side surface of the semiconductor substrate toward the resin layer. Item 4. The module according to any one of Items 1 to 3.   5. The module according to claim 1, wherein a corner portion of the semiconductor substrate protruding from the surface of the resin layer is chamfered.   6. The module according to claim 1, wherein irregularities are formed on the main surface of the semiconductor substrate.   The module according to any one of claims 1 to 6, wherein a metal film is formed on at least a part of the main surface of the semiconductor substrate.   The module according to claim 7, wherein irregularities are formed on a surface of the metal film. A wiring substrate; a semiconductor substrate mounted on one main surface of the wiring substrate; a component mounted on the other main surface of the wiring substrate; and a columnar connection terminal erected on the one main surface of the wiring substrate. And a preparation step of preparing a module body including a resin layer provided on the one main surface that covers the semiconductor substrate and a resin layer provided on the other main surface that covers the component ;
One end portion including a main surface of the semiconductor substrate opposite to the one main surface of the wiring substrate from the surface of the resin layer and an end portion of the connection terminal opposite to the one main surface of the wiring substrate. A removal step of removing a part by polishing or grinding the surface of the resin layer of the module body so that one end is exposed,
The linear expansion coefficient of the resin forming the resin layer provided on the other main surface is made smaller than the linear expansion coefficient of the resin forming the resin layer provided on the one main surface,
In the removing step, a part of each side surface of the semiconductor substrate and the connection terminal is exposed, and the height of the semiconductor substrate and the connection terminal that is higher from the one main surface of the wiring board. A method for manufacturing a module, comprising: polishing or grinding a surface of the resin layer so that the height of the component is lower than a height from the other main surface of the wiring board.   In the removing step, the height of the end surface on the one end side of the connection terminal from the one main surface of the wiring board is made higher than the height from the one main surface of the main surface of the semiconductor substrate. The module manufacturing method according to claim 9. In the removing step, the height of the main surface of the semiconductor substrate from the one main surface of the wiring board is set higher than the height from the one main surface of the end surface on the one end side of the connection terminal. The module manufacturing method according to claim 9 .

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