JP6284816B2 - Substrate processing system, substrate processing method, program, and computer storage medium - Google Patents

Description

  The present invention relates to a substrate processing system for applying a coating liquid onto a substrate, a substrate processing method using the substrate processing system, a program, and a computer storage medium.

  In recent years, for example, in semiconductor device manufacturing processes, semiconductor wafers (hereinafter referred to as “wafers”) have been increasing in diameter. Further, in a specific process such as mounting, wafer thinning is required. For example, if a thin wafer having a large diameter is transported or polished as it is, the wafer may be warped or cracked. For this reason, for example, in order to reinforce the wafer, the wafer is attached to a support substrate, for example.

  Such bonding of the wafer and the support substrate is performed by interposing an adhesive between the wafer and the support substrate using, for example, a bonding system described in Patent Document 1. The bonding system includes, for example, a coating device that applies an adhesive to a wafer or a support substrate, a heat treatment device that heats the wafer or the support substrate coated with the adhesive, and presses the wafer and the support substrate through the adhesive to bond them. And a joining device for And in this joining system, after apply | coating an adhesive agent to a wafer or a support substrate with a coating device and a heat processing apparatus and heating to predetermined temperature, the wafer and a support substrate are pressed and joined with a joining device.

  However, in the coating apparatus, the adhesive applied to the wafer or the support substrate may protrude from the outer peripheral portion of the wafer or the support substrate. The adhesive that protrudes in this way may adversely affect the transfer process of the wafer and the support substrate and other processing processes. For example, when an adhesive adheres to a transport device that transports a wafer and a support substrate in the transport process, the adhesive adheres to another wafer or support substrate. In still other processing steps, an adhesive may adhere to a processing apparatus that performs predetermined processing on the wafer and the support substrate.

  Moreover, in the coating apparatus, when the adhesive applied to the wafer or the support substrate is applied to the outer periphery of the wafer or the support substrate, the adhesive on the outer periphery melts and drips down in the subsequent heat treatment apparatus. End up. Even in such a case, there is a risk of adversely affecting the transfer process of the wafer and the support substrate and other processing processes.

  Therefore, in the coating apparatus, it is necessary to control so that the adhesive is not applied to the outer peripheral portion of the wafer or the support substrate. For example, Patent Document 2 proposes that a treatment liquid is applied to the outer peripheral portion of a substrate (wafer or support substrate) to form a fluororesin film, and then the application liquid is applied to the substrate. In such a case, the coating liquid is repelled by the fluororesin film and the coating film is not formed on the outer periphery of the substrate.

JP 2013-247292 A JP 2003-145016 A

  However, in the coating method described in Patent Document 2, the fluororesin film on the outer periphery of the substrate and the coating film on the inner periphery of the substrate are formed with the same film thickness. In such a case, no adhesive is interposed between the wafer and the support substrate at the outer peripheral portion, and the wafer and the support substrate cannot be appropriately bonded.

  This invention is made | formed in view of this point, and it aims at suppressing that a coating liquid is apply | coated to a board | substrate outer peripheral part, and performing a substrate process appropriately.

In order to achieve the above object, the present invention provides a substrate processing system for applying a coating liquid onto a substrate, the hydrophobizing agent supplying unit supplying a hydrophobizing agent to the outer peripheral portion of the substrate, and rotating while holding the substrate. A hydrophobic holding device having a rotating holding unit , a coating solution supply unit that supplies a coating solution to the substrate, a holding unit that holds the substrate, and the substrate held by the holding unit and the coating solution supply unit relative to each other. And a hydrophobizing agent supply section, so that the film thickness of the coating solution on the substrate is larger than the film thickness of the hydrophobizing agent on the outer periphery of the substrate. A control unit that controls the coating liquid supply unit, and the coating liquid supply unit is formed with a slit-shaped coating liquid discharge port that is longer than the diameter of the substrate . In the apparatus, a hydrophobizing agent is applied from the hydrophobizing agent supply unit to the outer periphery of the substrate, In the coating apparatus, after the coating liquid supply unit is disposed inside the outer periphery of the substrate on which the hydrophobizing agent is applied, the coating liquid supply unit is relatively positioned with respect to the substrate held by the holding unit. The hydrophobizing device and the coating device are controlled so as to move in the horizontal direction .

  According to the present invention, after the hydrophobizing agent is supplied from the hydrophobizing agent supply unit to the outer peripheral portion of the substrate, the coating solution is supplied from the coating solution supply unit to the substrate. At this time, application of the coating liquid by the hydrophobizing agent is suppressed on the outer peripheral portion of the substrate. Then, the substrate processing can be appropriately performed without the coating solution adhering to a transport device that transports the substrate coated with the coating solution or a processing device that performs a predetermined process on the substrate.

  In addition, the film thickness of the coating solution on the substrate is larger than the film thickness of the hydrophobizing agent on the outer periphery of the substrate. Then, for example, even when the coating liquid is an adhesive and the substrate processing is a bonding process for bonding the substrates, the bonding agent can be spread to the outer peripheral portion between the substrates when the substrates are bonded. Accordingly, the substrates can be appropriately bonded to each other over the entire surface.

  The coating liquid is an adhesive that joins substrates, and the substrate processing system includes the hydrophobizing agent supply unit, the coating liquid supply unit, and the substrate on which the hydrophobizing agent and the adhesive are applied. A processing station comprising: a heat treatment apparatus that heats the substrate to a predetermined temperature; and a bonding apparatus that bonds the substrates to each other via the adhesive; and a substrate or a superposed substrate in which the substrates are bonded to the processing station. And a loading / unloading station for loading / unloading.

  The hydrophobizing agent and the adhesive may be applied to a support substrate that supports a substrate to be processed.

According to another aspect of the present invention, there is provided a substrate processing method for applying a coating liquid onto a substrate, comprising a hydrophobizing step of supplying a hydrophobizing agent from a hydrophobizing agent supply unit to an outer peripheral portion of the substrate, and then a coating liquid supply unit And a coating step of supplying the coating liquid to the substrate from a slit-like discharge port that is longer than the diameter of the substrate, and the film thickness of the coating liquid on the substrate is determined by the hydrophobizing agent on the outer periphery of the substrate. rather greater than the thickness, in the hydrophobization step, while rotating the substrate held by the spin holder, supplies the hydrophobizing agent to the substrate peripheral portion from the hydrophobic agent supply unit, in the coating step, the hydrophobic After the coating liquid supply unit is disposed inside the outer peripheral portion of the substrate on which the agent is applied, the coating liquid supply unit is moved in the horizontal direction relative to the substrate held by the holding unit, and the coating is performed. A coating liquid is supplied from a liquid supply unit .

  The coating solution may be an adhesive that joins substrates, and the hydrophobizing agent and the adhesive may be applied to a support substrate that supports a substrate to be processed.

  According to another aspect of the present invention, there is provided a program that operates on a computer of a control unit that controls the substrate processing system so that the substrate processing method is executed by the substrate processing system.

  According to another aspect of the present invention, a readable computer storage medium storing the program is provided.

  ADVANTAGE OF THE INVENTION According to this invention, it can suppress that a coating liquid is apply | coated to a board | substrate outer peripheral part, and can process a board | substrate appropriately.

It is a top view which shows the outline of a structure of the joining system concerning this Embodiment. It is a side view which shows the outline of the internal structure of the joining system concerning this Embodiment. It is a side view of a to-be-processed wafer and a support wafer. It is a cross-sectional view which shows the outline of a structure of a joining apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of a junction part. It is a longitudinal cross-sectional view which shows the outline of a structure of a junction part. It is a top view which shows the outline of a structure of a 2nd holding | maintenance part and its moving mechanism. It is a longitudinal cross-sectional view which shows the outline of a structure of a hydrophobization apparatus. It is a cross-sectional view which shows the outline of a structure of a hydrophobization apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of a coating device. It is a cross-sectional view which shows the outline of a structure of a coating device. It is a perspective view which shows the outline of a structure of an adhesive agent nozzle. It is a flowchart which shows the main processes of a joining process. It is explanatory drawing which shows a mode that a hydrophobizing agent is apply | coated to the outer peripheral part of a support wafer. It is explanatory drawing which shows a mode that the hydrophobizing agent was apply | coated to the outer peripheral part of a support wafer. It is explanatory drawing which shows a mode that an adhesive agent is apply | coated to a support wafer. It is explanatory drawing which shows a mode that an adhesive agent is apply | coated to a support wafer. It is explanatory drawing which shows a mode that the adhesive agent was apply | coated to the support wafer. It is explanatory drawing which shows a mode that a to-be-processed wafer and a support wafer are joined. It is explanatory drawing which shows a mode that the to-be-processed wafer and the support wafer were joined. It is explanatory drawing which shows a mode that the adhesive agent was apply | coated on the support wafer with the conventional application | coating method. It is a longitudinal cross-sectional view which shows the outline of a structure of the coating device concerning other embodiment. It is a cross-sectional view which shows the outline of a structure of the coating device concerning other embodiment.

  Embodiments of the present invention will be described below. FIG. 1 is a plan view showing an outline of a configuration of a bonding system 1 as a substrate processing system according to the present embodiment. FIG. 2 is a side view illustrating the outline of the internal configuration of the joining system 1.

In the bonding system 1, as shown in FIG. 3, for example, a processing target wafer W as a processing target substrate and a supporting wafer S as a supporting substrate are bonded via an adhesive G. Hereinafter, in the processing target wafer W, a surface bonded to the support wafer S via the adhesive G is referred to as a “bonding surface W _J ” as a surface, and a surface opposite to the bonding surface W _J is defined as a “back surface”. It is referred to as “non-bonding surface W _N ”. Similarly, in the support wafer S, a surface bonded to the processing target wafer W via the adhesive G is referred to as a “bonding surface S _J ” as a surface, and a surface opposite to the bonding surface S _J is defined as a “back surface”. It is referred to as “non-joint surface S _N ”. And in the joining system 1, the to-be-processed wafer W and the support wafer S are joined, and the superposition | polymerization wafer T as a superposition | polymerization board | substrate is formed. Note that wafer W is a wafer as a product, for example, joint surface W _J A plurality of electronic circuit is formed on the non-bonding surface W _N is polished. The support wafer S is a wafer having the same diameter as that of the wafer W to be processed and supporting the wafer W to be processed. In this embodiment, the case where a wafer is used as the support substrate will be described, but another substrate such as a glass substrate may be used.

As shown in FIG. 1, the bonding system 1 includes cassettes C _W , C _S , and C _T that can accommodate, for example, a plurality of wafers W to be processed, a plurality of support wafers S, and a plurality of superposed wafers T, respectively. The loading / unloading station 2 for loading / unloading and the processing station 3 including various processing apparatuses for performing predetermined processing on the processing target wafer W, the supporting wafer S, and the overlapped wafer T are integrally connected. .

The loading / unloading station 2 is provided with a cassette mounting table 10. The cassette mounting table 10 is provided with a plurality of, for example, four cassette mounting plates 11. The cassette mounting plates 11 are arranged in a line in the X direction (vertical direction in FIG. 1). These cassette mounting plates 11, cassettes _C W to the outside of the interface system _1, C S, when loading and unloading the _{C T,} a cassette _{C W,} C S, can be placed on _{C T} . Thus, the carry-in / out station 2 is configured to be capable of holding a plurality of wafers W to be processed, a plurality of support wafers S, and a plurality of superposed wafers T. The number of cassette mounting plates 11 is not limited to the present embodiment, and can be arbitrarily determined. One of the cassettes may be used for collecting defective wafers. That is, this is a cassette that can separate from a normal superposed wafer T a wafer in which a defect occurs in the joining of the processing target wafer W and the supporting wafer S due to various factors. In the present embodiment, among the plurality of cassettes C _T, using a one cassette C _T for the recovery of the fault wafer, and using the other cassette C _T for the accommodation of a normal bonded wafer T.

In the loading / unloading station 2, a wafer transfer unit 20 is provided adjacent to the cassette mounting table 10. The wafer transfer unit 20 is provided with a wafer transfer device 22 that is movable on a transfer path 21 extending in the X direction. The wafer transfer device 22 is also movable in the vertical direction and around the vertical axis (θ direction), and includes cassettes C _W , C _S , and C _T on each cassette mounting plate 11 and a third of the processing station 3 to be described later. The to-be-processed wafer W, the support wafer S, and the superposed wafer T can be transferred to and from the transition devices 50 and 51 of the processing block G3.

  The processing station 3 is provided with a plurality of, for example, three processing blocks G1, G2, and G3 including various processing apparatuses. For example, a first processing block G1 is provided on the front side of the processing station 3 (X direction negative direction side in FIG. 1), and on the back side of the processing station 3 (X direction positive direction side in FIG. 1). A second processing block G2 is provided. Further, a third processing block G3 is provided on the processing station 3 on the side of the loading / unloading station 2 (the Y direction negative direction side in FIG. 1).

  For example, in the first processing block G1, bonding devices 30 to 33 for pressing and bonding the processing target wafer W and the supporting wafer S via the adhesive G are provided in this order from the loading / unloading station 2 side in the Y direction. They are arranged side by side. The number and arrangement of the joining devices 30 to 33 can be arbitrarily set. Moreover, the structure of the joining apparatuses 30-33 is mentioned later.

  For example, in the second processing block G2, as shown in FIG. 2, a hydrophobizing device 40 for applying a hydrophobizing agent to the outer periphery of the support wafer S, a coating device 41 for applying the adhesive G to the support wafer S, A heat treatment apparatus 42 to 44 that heats the support wafer S coated with the adhesive G to a predetermined temperature and a similar heat treatment apparatus 45 to 47 move toward the carry-in / out station 2 side (negative in the Y direction in FIG. 1). Are arranged in this order. The hydrophobizing device 40 and the coating device 41 are provided in two stages in this order from the bottom. The heat treatment apparatuses 42 to 44 and the heat treatment apparatuses 45 to 47 are provided in three stages in this order from the bottom. In addition, the number of apparatuses of the hydrophobizing apparatus 40, the coating apparatus 41, and the heat processing apparatuses 42 to 47 and the arrangement in the vertical direction and the horizontal direction can be arbitrarily set. The configurations of the hydrophobizing device 40 and the coating device 41 will be described later.

  As said heat processing apparatus 42-47, the heat processing apparatus of Unexamined-Japanese-Patent No. 2013-247292 can be used, for example. That is, the heat treatment apparatuses 42 to 47 have a heating unit that heat-processes the wafer W to be processed and a temperature adjustment unit that adjusts the temperature of the wafer W to be processed. In the heat treatment apparatuses 42 to 47, the temperature of the superposed wafer T can also be adjusted. Further, in order to adjust the temperature of the superposed wafer T, a temperature adjusting device (not shown) may be provided in the second processing block G2. The temperature adjusting device has the same configuration as the heat treatment devices 42 to 47 described above, and a temperature adjusting plate is used instead of the hot plate. A cooling member such as a Peltier element is provided inside the temperature adjustment plate, and the temperature adjustment plate can be adjusted to a set temperature.

  For example, in the third processing block G3, transition devices 50 and 51 for the processing target wafer W, the supporting wafer S, and the overlapped wafer T are provided in two stages in this order from the bottom.

  As shown in FIG. 1, a wafer transfer region 60 is formed in a region surrounded by the first processing block G1 to the third processing block G3. For example, a wafer transfer device 61 is disposed in the wafer transfer region 60. Note that the pressure in the wafer transfer region 60 is equal to or higher than atmospheric pressure, and the wafer to be processed W, the support wafer S, and the superposed wafer T are transferred in a so-called atmospheric system in the wafer transfer region 60.

  The wafer transfer device 61 has, for example, a transfer arm that can move around the vertical direction, horizontal direction (Y direction, X direction), and vertical axis. The wafer transfer device 61 moves within the wafer transfer region 60, and moves to a predetermined device in the surrounding first processing block G1, second processing block G2, and third processing block G3. S and superposed wafer T can be conveyed.

  The above joining system 1 is provided with a controller 70 as shown in FIG. The control unit 70 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program for controlling processing of the processing target wafer W, the supporting wafer S, and the overlapped wafer T in the bonding system 1. The program storage unit also stores a program for controlling the operation of drive systems such as the above-described various processing apparatuses and transfer apparatuses to realize the below-described joining process in the joining system 1. The program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 70 from the storage medium H.

  Next, the structure of the joining apparatuses 30 to 33 described above will be described. As shown in FIG. 4, the bonding apparatus 30 includes a processing container 100 that can seal the inside. A loading / unloading port 101 for the wafer W to be processed, the support wafer S, and the overlapped wafer T is formed on the side surface of the processing container 100 on the wafer transfer region 60 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port. Yes.

  The inside of the processing container 100 is partitioned by the inner wall 102 into a preprocessing region D1 and a joining region D2. The loading / unloading port 101 described above is formed on the side surface of the processing container 100 in the preprocessing region D1. In addition, a carry-in / out port 103 for the wafer W to be processed, the support wafer S, and the overlapped wafer T is also formed on the inner wall 102.

  In the pretreatment region D <b> 1, a delivery unit 110 for delivering the processing target wafer W, the support wafer S, and the overlapped wafer T to and from the outside of the bonding apparatus 30 is provided. The delivery unit 110 is disposed adjacent to the loading / unloading port 101. The delivery unit 110 is arranged in a plurality of, for example, two stages in the vertical direction, and can deliver any two of the processing target wafer W, the support wafer S, and the overlapped wafer T at the same time. For example, the processing target wafer W or the support wafer S before bonding may be delivered by one delivery unit 110, and the superposed wafer T after joining may be delivered by another delivery unit 110. Alternatively, the wafer W to be processed before bonding may be delivered by one delivery unit 110 and the support wafer S before joining may be delivered by another delivery unit 110.

  As the delivery unit 110, for example, a delivery unit described in JP2013-247292A can be used. That is, the delivery unit 110 includes a delivery arm 111 and wafer support pins 112. The delivery arm 111 can deliver the wafer W to be processed, the support wafer S, and the overlapped wafer T between the wafer transfer device 61 and the wafer support pins 112. The wafer support pins 112 are provided in a plurality of, for example, three locations, and can support the processing target wafer W, the supporting wafer S, and the superposed wafer T.

  On the Y direction negative direction side of the pretreatment region D1, that is, on the loading / unloading port 103 side, a reversing unit 120 that reverses the front and back surfaces of the wafer W to be processed is provided, for example, vertically above the delivery unit 110.

  As the reversing unit 120, for example, a reversing unit described in JP2013-247292A can be used. That is, the reversing unit 120 includes a holding arm 121 that holds the processing target wafer W and the supporting wafer S. The holding arm 121 extends in the horizontal direction (X direction in FIG. 4). The holding arm 121 is provided with holding members 122 that hold the wafer W to be processed and the support wafer S, for example, at four locations. The holding arm 121 is supported by a driving unit 123 including, for example, a motor. By this drive unit 123, the holding arm 121 is rotatable around the horizontal axis and can move in the horizontal direction (X direction and Y direction in FIG. 4). Further, the holding arm 121 can be moved in the vertical direction along the support pillar 124 extending in the vertical direction by the driving unit 123.

  A position adjusting mechanism 125 that adjusts the horizontal direction of the processing target wafer W and the supporting wafer S held by the holding member 122 is supported by the support pillar 124 via a support plate 126. The position adjustment mechanism 125 includes a base 127 and a detection unit 128 that detects the positions of the notched portions of the processing target wafer W and the supporting wafer S. The position adjusting mechanism 125 detects the positions of the notched portions of the processing target wafer W and the supporting wafer S by the detection unit 128 while moving the processing target wafer W and the supporting wafer S held by the holding member 122 in the horizontal direction. Thus, the position of the notch portion is adjusted to adjust the horizontal orientation of the processing target wafer W and the supporting wafer S.

  The delivery unit 110 configured as described above is arranged in two stages in the vertical direction, and the reversing unit 120 is arranged vertically above the delivery unit 110. That is, the delivery arm 111 of the delivery unit 110 moves in the horizontal direction below the holding arm 121 and the position adjustment mechanism 125 of the reversing unit 120. Further, the wafer support pins 112 of the delivery unit 110 are disposed below the holding arms 121 of the reversing unit 120.

  On the Y direction positive direction side of the bonding region D2, a transfer unit 130 for transferring the wafer W to be processed, the support wafer S, and the overlapped wafer T to the delivery unit 110, the reversing unit 120, and the bonding unit 140 described later is provided. ing. The conveyance unit 130 is attached to the loading / unloading port 103.

As the conveyance unit 130, for example, a conveyance unit described in JP2013-247292A can be used. That is, the transport unit 130 includes a plurality of, for example, two transport arms 131. The two transfer arms 131 are arranged in two stages in this order from the bottom in the vertical direction. The back surfaces of the wafer W to be processed, the support wafer S, and the superposed wafer T (the wafer W to be processed and the support wafer S are not bonded). A transfer arm that holds and transfers the surfaces W _N and S _N ) and a transfer arm that holds and transfers the surface of the wafer W to be processed, that is, the outer peripheral portion of the bonding surface W _J. For example, an arm driving unit 132 including a motor is provided at the base end of the transfer arm 131. Each arm 131 can move in the horizontal direction independently by the arm driving unit 132. The transfer arm 131 and the arm driving unit 132 are supported by the base 133.

  On the negative side in the Y direction of the bonding region D2, a bonding portion 140 that presses and bonds the processing target wafer W and the support wafer S via the adhesive G is provided.

  As shown in FIG. 5, the bonding unit 140 includes a first holding unit 200 that places and holds the support wafer S on the upper surface, and a second holding unit 201 that holds the processing target wafer W on the lower surface by suction. doing. The first holding unit 200 is provided below the second holding unit 201 and is disposed so as to face the second holding unit 201. That is, the support wafer S held by the first holding unit 200 and the processing target wafer W held by the second holding unit 201 are arranged to face each other.

  For the first holding unit 200, for example, an electrostatic chuck for electrostatically attracting the support wafer S is used. The first holding unit 200 is made of ceramic such as aluminum nitride ceramic having thermal conductivity. Further, for example, a DC high-voltage power supply 210 is connected to the first holding unit 200. Then, an electrostatic force can be generated on the surface of the first holding unit 200, and the support wafer S can be electrostatically adsorbed on the first holding unit 200. The material of the first holding unit 200 is not limited to the present embodiment, and other ceramics such as silicon carbide ceramic and alumina ceramic may be used, for example, insulating on the surface of the first holding unit 200. When forming a layer, you may use metal materials, such as aluminum and stainless steel other than a ceramic, for example.

  A first heating mechanism 211 for heating the support wafer S is provided inside the first holding unit 200. For the first heating mechanism 211, for example, a heater is used. The heating temperature of the support wafer S by the first heating mechanism 211 is controlled by the control unit 70, for example.

  In addition, a heat insulating plate 212 is provided on the lower surface side of the first holding unit 200. The heat insulating plate 212 prevents the heat when the support wafer S is heated by the first heating mechanism 211 from being transmitted to the lower chamber 281 side described later. For example, silicon nitride is used for the heat insulating plate 212.

  Below the first holding unit 200, for example, three raising / lowering pins 220 for supporting and lifting the support wafer S or the overlapped wafer T from below are provided at three locations. The elevating pin 220 can be moved up and down by the elevating drive unit 221. The elevating drive unit 221 includes, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw. Further, in the vicinity of the central portion of the first holding unit 200, through holes 222 penetrating the first holding unit 200 and the lower chamber 281 in the thickness direction are formed at, for example, three locations. The elevating pin 220 is inserted through the through hole 222 and can protrude from the upper surface of the first holding unit 200. In addition, the raising / lowering drive part 221 is provided in the lower part of the lower chamber 281 mentioned later. The elevating drive unit 221 is provided on the support member 230.

  For the second holding unit 201, for example, an electrostatic chuck for electrostatically attracting the wafer W to be processed is used. The second holding unit 201 is made of ceramic such as aluminum nitride ceramic having thermal conductivity. In addition, for example, a DC high-voltage power supply 240 is connected to the second holding unit 201. Then, an electrostatic force can be generated on the surface of the second holding unit 201, and the wafer W to be processed can be electrostatically attracted onto the second holding unit 201. The material of the second holding unit 201 is not limited to the present embodiment, and other ceramics such as silicon carbide ceramic and alumina ceramic may be used, for example, insulating on the surface of the second holding unit 201. When forming a layer, you may use metal materials, such as aluminum and stainless steel other than a ceramic, for example.

  A second heating mechanism 241 for heating the processing target wafer W is provided inside the second holding unit 201. For example, a heater is used for the second heating mechanism 241. For example, a heater is used for the second heating mechanism 241. The heating temperature of the wafer W to be processed by the second heating mechanism 241 is controlled by the control unit 70, for example.

  In addition, a heat insulating plate 242 is provided on the upper surface side of the second holding unit 201. The heat insulating plate 242 prevents heat generated when the processing target wafer W is heated by the second heating mechanism 241 from being transmitted to the support plate 250 described later. For example, silicon nitride is used for the heat insulating plate 242.

  On the upper surface side of the second holding unit 201, a pressurizing mechanism 260 that presses the second holding unit 201 vertically downward is provided via a support plate 250. The pressurizing mechanism 260 includes a pressure vessel 261 provided so as to cover the processing target wafer W and the support wafer S, a fluid supply pipe 262 for supplying a fluid, for example, compressed air, to the inside of the pressure vessel 261, and a fluid for the inside. A fluid supply source 263 has a fluid for storing and supplying a fluid to the fluid supply pipe 262.

  The members on the upper surface side of these second holding portions 201 are supported by an air cylinder (not shown) provided above the support plate 250. Then, parallel adjustment of the upper chamber 282 and adjustment of the gap between the second holding unit 201 and the first holding unit 200 are performed by an adjustment bolt (not shown) provided above the support plate 250.

  The pressure vessel 261 is configured by, for example, a stainless steel bellows that is extendable in the vertical direction. The pressure vessel 261 has a lower surface fixed to the upper surface of the support plate 250 and an upper surface fixed to the lower surface of the support plate 264 provided above the second holding unit 201. The fluid supply pipe 262 has one end connected to the pressure vessel 261 and the other end connected to the fluid supply source 263. Then, by supplying fluid from the fluid supply pipe 262 to the pressure vessel 261, the pressure vessel 261 extends. At this time, since the upper surface of the pressure vessel 261 and the lower surface of the support plate 264 are in contact with each other, the pressure vessel 261 extends only in the downward direction, and the second holding portion 201 provided on the lower surface of the pressure vessel 261 is moved downward. Can be pressed. And since the pressure vessel 261 has elasticity, even if the parallelism of the 2nd holding | maintenance part 201 and the parallelism of the 1st holding | maintenance part 200 have arisen, the pressure vessel 261 can absorb the difference. At this time, the inside of the pressure vessel 261 is pressurized by the fluid and can be pressed uniformly. Furthermore, the planar shape of the pressure vessel 261 is the same as the planar shape of the wafer to be processed W and the support wafer S, and the diameter of the pressure vessel 261 is the same as the diameter of the wafer to be processed W, for example, 300 mm. Does not occur. Therefore, regardless of the parallelism of the first holding unit 200 and the second holding unit 201, the pressure vessel 261 presses the second holding unit 201 (the processing target wafer W and the support wafer S) uniformly in the surface. Can do. Adjustment of the pressure when pressing the second holding unit 201 is performed by adjusting the pressure of the compressed air supplied to the pressure vessel 261. Note that the support plate 264 is preferably formed of a member having a strength that does not deform even when a reaction force of a load applied to the second holding unit 201 is received by the pressure mechanism 260.

  Between the 1st holding | maintenance part 200 and the 2nd holding | maintenance part 201, the 1st imaging part 270 which images the surface of the support wafer S hold | maintained at the 1st holding | maintenance part 200, and a 2nd holding | maintenance part A second imaging unit 271 that images the surface of the processing target wafer W held by the 201 is provided. For example, a wide-angle CCD camera is used for each of the first imaging unit 270 and the second imaging unit 271. Further, the first imaging unit 270 and the second imaging unit 271 are configured to be movable in the vertical direction and the horizontal direction by a moving mechanism (not shown).

  The joint 140 has a processing container 280 that can seal the inside. The processing container 280 accommodates the first holding unit 200, the second holding unit 201, the support plate 250, the pressure vessel 261, the support plate 264, the first imaging unit 270, and the second imaging unit 271 described above. To do.

  The processing container 280 includes a lower chamber 281 that supports the first holding unit 200 and an upper chamber 282 that supports the second holding unit 201. The upper chamber 282 is configured to be vertically movable by an elevating mechanism (not shown) such as an air cylinder. A sealing material 283 for maintaining the airtightness of the inside of the processing container 280 is provided on the joint surface of the lower chamber 281 with the upper chamber 282. For the sealing material 283, for example, an O-ring is used. Then, as shown in FIG. 6, the lower chamber 281 and the upper chamber 282 are brought into contact with each other, whereby the inside of the processing container 280 is formed in a sealed space.

  Around the upper chamber 282, as shown in FIG. 7, a plurality of, for example, five moving mechanisms 290 for moving the second holding unit 201 in the horizontal direction via the upper chamber 282 are provided. Of the five moving mechanisms 290, four moving mechanisms 290 are used for moving the second holding unit 201 in the horizontal direction, and one moving mechanism 290 is around the vertical axis (θ direction) of the second holding unit 201. Used for rotation. As shown in FIG. 5, the moving mechanism 290 has a cam 291 that contacts the upper chamber 282 to move the second holding unit 201 and a cam 291 that rotates the cam 291 via the shaft 292, for example, a motor (not shown). And a built-in rotation drive unit 293. The cam 291 is provided eccentrically with respect to the central axis of the shaft 292. Then, by rotating the cam 291 by the rotation driving unit 293, the center position of the cam 291 with respect to the second holding unit 201 moves, and the second holding unit 201 can be moved in the horizontal direction.

  The lower chamber 281 is provided with a decompression mechanism 300 that decompresses the atmosphere in the processing container 280. The decompression mechanism 300 includes an intake pipe 301 for sucking the atmosphere in the processing container 280 and a negative pressure generator 302 such as a vacuum pump connected to the intake pipe 301.

  In addition, since the structure of the joining apparatuses 31-33 is the same as that of the structure of the joining apparatus 30 mentioned above, description is abbreviate | omitted. Moreover, the operation | movement of each part in the joining apparatuses 30-33 is controlled by the control part 70 mentioned above.

  Next, the configuration of the above-described hydrophobizing apparatus 40 will be described. As shown in FIG. 8, the hydrophobizing apparatus 40 includes a processing container 310 that can be sealed inside. A loading / unloading port (not shown) for the support wafer S is formed on the side surface of the processing container 310 on the wafer transfer region 60 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

  A spin chuck 320 serving as a rotation holding unit that holds and rotates the support wafer S is provided in the center of the processing container 310. The spin chuck 320 has a horizontal upper surface, and a suction port (not shown) for sucking, for example, the support wafer S is provided on the upper surface. The support wafer S can be sucked and held on the spin chuck 320 by suction from the suction port.

  Below the spin chuck 320, a chuck driving unit 321 including, for example, a motor is provided. The spin chuck 320 can be rotated at a predetermined speed by the chuck driving unit 321. In addition, the chuck driving unit 321 is provided with an elevating drive source such as a cylinder, and the spin chuck 320 can be moved up and down.

  Around the spin chuck 320, there is provided a cup 322 that receives and collects the liquid scattered or dropped from the support wafer S. Connected to the lower surface of the cup 322 are a discharge pipe 323 for discharging the collected liquid and an exhaust pipe 324 for evacuating and exhausting the atmosphere in the cup 322.

  As shown in FIG. 9, a rail 330 extending along the Y direction (left and right direction in FIG. 9) is formed on the side of the cup 322 in the negative X direction (downward direction in FIG. 9). For example, the rail 330 is formed from the outside of the cup 322 on the Y direction negative direction (left direction in FIG. 9) side to the outside of the Y direction positive direction (right direction in FIG. 9) side. An arm 331 is attached to the rail 330.

  As shown in FIGS. 8 and 9, the arm 331 supports a hydrophobizing agent nozzle 332 as a hydrophobizing agent supply unit that supplies the hydrophobizing agent to the outer peripheral portion of the support wafer S. As the hydrophobizing agent, a material having hydrophobicity (water repellency) with respect to the adhesive G, for example, HMDS (hexamethyldisiloxane) is used. The arm 331 is movable on the rail 330 by a nozzle driving unit 333 shown in FIG. Thereby, the hydrophobizing agent nozzle 332 can move from the standby part 334 installed on the outer side of the Y direction positive direction side of the cup 322 to above the outer peripheral part of the support wafer S in the cup 322, and further on the support wafer S. Can be moved in the radial direction of the support wafer S. The arm 331 can be moved up and down by a nozzle driving unit 333, and the height of the hydrophobizing agent nozzle 332 can be adjusted.

  As shown in FIG. 8, a supply pipe 335 that supplies the hydrophobizing agent to the hydrophobizing agent nozzle 332 is connected to the hydrophobizing agent nozzle 332. The supply pipe 335 communicates with a hydrophobizing agent supply source 336 that stores the hydrophobizing agent therein. The supply pipe 335 is provided with a supply device group 337 including a valve that controls the flow of the hydrophobizing agent, a flow rate adjusting unit, and the like.

  Note that the operation of each unit in the hydrophobizing apparatus 40 is controlled by the control unit 70 described above.

  Next, the configuration of the coating apparatus 41 described above will be described. As shown in FIG. 10, the coating device 41 includes a processing container 340 that can seal the inside. A loading / unloading port (not shown) for the support wafer S is formed on the side surface of the processing container 340 on the wafer transfer region 60 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

  A holding part 350 for placing and holding the support wafer S on the surface is provided at the center in the processing container 340. For the holding unit 350, for example, a vacuum chuck or an electrostatic chuck is used.

  Below the holding part 350, raising and lowering pins 351 for supporting and lifting the support wafer S from below are provided. For example, three elevating pins 351 are provided and can be moved up and down by an elevating drive unit 352. The holding part 350 has through holes 353 penetrating through the holding part 350 in the thickness direction, for example, at three locations. The elevating pins 351 can be inserted through the through holes 353 and protrude from the upper surface of the holding part 350. ing.

  As shown in FIG. 11, a rail 360 extending along the Y direction (left-right direction in FIG. 11) is formed on the negative side in the X direction (downward direction in FIG. 11) of the holding part 350. The rail 360 is formed, for example, from the outside of the holding portion 350 on the Y direction negative direction (left direction in FIG. 11) to the outside on the Y direction positive direction (right direction in FIG. 11). An arm 361 is attached to the rail 360.

  As shown in FIGS. 10 and 11, the arm 361 supports an adhesive nozzle 362 as a coating liquid supply unit that supplies an adhesive G as a coating liquid to the support wafer S. The arm 361 is movable on the rail 360 by a nozzle driving unit 363 shown in FIG. As a result, the adhesive nozzle 362 can move from the standby unit 364 installed on the outer side of the holding unit 350 on the Y direction positive direction side to above the center of the supporting wafer S on the holding unit 350, and further to the supporting wafer S. Can be moved in the radial direction of the support wafer S. The arm 361 can be moved up and down by a nozzle driving unit 363, and the height of the adhesive nozzle 362 can be adjusted. In the present embodiment, the rail 360, the arm 361, and the nozzle drive unit 363 constitute the moving mechanism of the present invention.

  The adhesive nozzle 362 is formed in a substantially rectangular parallelepiped shape extending in the X direction as shown in FIG. The adhesive nozzle 362 is formed longer than the diameter of the support wafer S, for example. On the lower end surface of the adhesive nozzle 362, for example, a slit-like coating liquid discharge port 362 a longer than the diameter of the support wafer S is formed.

  As shown in FIG. 10, a supply pipe 365 that supplies the adhesive G to the adhesive nozzle 362 is connected to the adhesive nozzle 362. The supply pipe 365 communicates with an adhesive supply source 366 that stores the adhesive G therein. Further, the supply pipe 365 is provided with a supply device group 367 including a valve for controlling the flow of the adhesive G, a flow rate adjusting unit, and the like.

  The operation of each unit in the coating apparatus 41 is controlled by the control unit 70 described above.

  Next, a method for joining the processing target wafer W and the supporting wafer S performed using the joining system 1 configured as described above will be described. FIG. 13 is a flowchart showing an example of main steps of the joining process.

First, a cassette C _W housing a plurality of the processed the wafer _W, the cassette C _S accommodating a plurality of support wafer _S, and an empty cassette C _T is a predetermined cassette mounting plate 11 of the carry-out station 2 Placed. Thereafter, the support wafer _S in the cassette CS is taken out by the wafer transfer device 22 and transferred to the transition device 50 of the third processing block G3 of the processing station 3. At this time, the support wafer S is transported in a state where the non-joint surface _SN faces downward.

Next, the support wafer S is transferred to the hydrophobizing device 40 by the wafer transfer device 61. The support wafer S carried into the hydrophobizing device 40 is transferred from the wafer transfer device 61 to the spin chuck 320 and is held by suction. At this time, the non-bonding surface _SN of the support wafer S is sucked and held.

Subsequently, the arm 331 moves the hydrophobizing agent nozzle 332 of the standby unit 334 to above the outer periphery of the support wafer S. Thereafter, while rotating the support wafer S by the spin chuck 320, and supplies the hydrophobizing agent H on the outer periphery of the joint surface S _J of the support wafer S from a hydrophobic agent nozzle 332 as shown in FIG. 14. The hydrophobizing agent H is applied in a range where the distance L from the outer surface of the support wafer S is, for example, about 2 mm. Then, as shown in FIG. 15, the hydrophobizing agent H is applied over the outer periphery entire circumference of the joining surface S _J of the support wafer S (step A1 in FIG. 13).

  Next, the support wafer S is transferred to the coating device 41 by the wafer transfer device 61. The support wafer S carried into the coating device 41 is transferred to the lift pins 351 and is sucked and held by the holding unit 350.

Subsequently, as shown in FIGS. 16 and 17, the arm 361 moves the adhesive nozzle 362 of the standby unit 364 above the outer periphery of the support wafer S, more specifically, above the inner end of the hydrophobizing agent H. . Then, the adhesive nozzle 362 is further lowered to a predetermined height. The distance between the bonding surfaces S _J of the support wafer S and the adhesive nozzle 362 is set according to the thickness of the adhesive G is coated on the support wafer S. Then, the adhesive G is supplied from the adhesive supply source 366 to the adhesive nozzle 362, and the adhesive G is exposed from the discharge port 362a of the adhesive nozzle 362 by surface tension. Then, a pool of the adhesive G discharged from the adhesive nozzle 362 is formed between the outer peripheral surface of the support wafer S and the discharge port 362a of the adhesive nozzle 362.

Thereafter, the adhesive G in a state in contact with the joint surface S _J of the support wafer S, moves the glue nozzle 362 in the radial direction of the support wafer S by the arm 361. Then, the adhesive G discharged from the discharge port 362a is sequentially supplied to the joint surface S _J of the support wafer S by the action of its own weight and capillarity. The adhesive nozzle 362 is moved to the other outer peripheral portion of the support wafer S, more specifically, to the other inner end portion of the hydrophobizing agent H. Thus, the inside of the hydrophobizing agent H as shown in FIG. 18, the adhesive G is applied to the entire surface of the joint surface S _J of the support wafer S (step A2 in FIG. 13).

In this step A2, the thickness T _G of the adhesive G is larger than the thickness T _H hydrophobizing agent H. Incidentally, in practice, when the adhesive G is heat treated in step A3 to be described later, the solvent component in the adhesive G is volatilized, the thickness T _G of the adhesive G is slightly smaller. Therefore, in step A2, as a final film thickness of the adhesive G is greater than the thickness T _H of the hydrophobizing agent H, the adhesive G is applied.

  Next, the support wafer S is transferred to the heat treatment apparatus 42 by the wafer transfer apparatus 61. In the heat treatment apparatus 42, first, the support wafer S is heated to a predetermined temperature, for example, 100 ° C. to 300 ° C. by the heating unit (step A3 in FIG. 13). By performing such heating, the adhesive G on the support wafer S is heated and the adhesive G is cured. Thereafter, the temperature of the supporting wafer S is adjusted to a predetermined temperature, for example, 23 ° C., which is normal temperature, by the temperature adjusting unit.

  Next, the support wafer S is transferred to the bonding apparatus 30 by the wafer transfer device 61. The support wafer S transferred to the bonding apparatus 30 is transferred from the wafer transfer apparatus 61 to the transfer arm 111 of the transfer unit 110 and then transferred from the transfer arm 111 to the wafer support pins 112. Thereafter, the support wafer S is transferred from the wafer support pins 112 to the reversing unit 120 by the transfer arm 131 of the transfer unit 130.

  The support wafer S transferred to the reversing unit 120 is held by the holding member 122 and moved to the position adjusting mechanism 125. Then, the position adjustment mechanism 125 adjusts the position of the notch portion of the support wafer S to adjust the horizontal direction of the support wafer S (step A4 in FIG. 13).

Thereafter, the support wafer S is transferred from the reversing unit 120 to the bonding unit 140 by the transfer arm 131 of the transfer unit 130. At this time, the upper chamber 282 is located above the lower chamber 281, the upper chamber 282 and the lower chamber 281 are not in contact with each other, and the inside of the processing container 280 is not formed in a sealed space. The support wafer S transferred to the bonding unit 140 is placed on the first holding unit 200 (step A5 in FIG. 13). On the first holding part 200, joint surface S _J of the support wafer S is a state facing upward, i.e. support wafer S in a state in which the adhesive G is facing upward is held by suction.

  While the processes A1 to A5 described above are performed on the support wafer S, the wafer W to be processed is processed following the support wafer S. The wafer W to be processed is transferred to the bonding apparatus 30 by the wafer transfer device 61. Note that the process of transporting the wafer W to be processed to the bonding apparatus 30 is the same as that in the above embodiment, and a description thereof will be omitted.

  The wafer W to be processed transferred to the bonding apparatus 30 is transferred from the wafer transfer apparatus 61 to the transfer arm 111 of the transfer unit 110 and then transferred from the transfer arm 111 to the wafer support pins 112. Thereafter, the wafer W to be processed is transferred from the wafer support pins 112 to the reversing unit 120 by the transfer arm 131 of the transfer unit 130.

The wafer W to be processed transferred to the reversing unit 120 is held by the holding member 122 and moved to the position adjusting mechanism 125. Then, the position adjustment mechanism 125 adjusts the position of the notch portion of the wafer to be processed W to adjust the horizontal direction of the wafer to be processed W (step A6 in FIG. 13). The wafer W to be processed whose horizontal direction has been adjusted is moved in the horizontal direction from the position adjusting mechanism 125 and moved upward in the vertical direction, and then the front and back surfaces thereof are reversed (step A7 in FIG. 13). That is, the bonding surface W _J of wafer W is directed downward.

Thereafter, the wafer W to be processed is moved downward in the vertical direction and then transferred from the reversing unit 120 to the bonding unit 140 by the transfer arm 131 of the transfer unit 130. At this time, the transfer arm 131, so holds only the outer peripheral portion of the joint surface W _J of the processing the wafer W, for example, does not bonding surface W _J is soiled by particles or the like adhering to the transfer arm 131. The wafer W to be processed transferred to the bonding unit 140 is sucked and held by the second holding unit 201 (step A8 in FIG. 13). In the second holding portion 201, wafer W is held in a state where the bonding surface W _J of wafer W is directed downward.

  In the bonding unit 140, first, the horizontal position adjustment between the support wafer S held by the first holding unit 200 and the processing target wafer W held by the second holding unit 201 is performed. A plurality of predetermined reference points, for example, four or more reference points, are formed on the surface of the wafer W to be processed and the surface of the support wafer S. Then, the first imaging unit 270 is moved in the horizontal direction, and the surface of the support wafer S is imaged. Further, the second imaging unit 271 is moved in the horizontal direction, and the surface of the processing target wafer W is imaged. Thereafter, the position of the reference point of the support wafer S displayed in the image captured by the first imaging unit 270, and the position of the reference point of the processing target wafer W displayed in the image captured by the second imaging unit 271. The horizontal position (including the horizontal direction) of the wafer W to be processed is adjusted by the moving mechanism 290 so that the two match. In other words, the cam 291 is rotated by the rotation driving unit 293 to move the second holding unit 201 in the horizontal direction via the upper chamber 282, and the horizontal position of the wafer W to be processed is adjusted. In this way, the horizontal position of the wafer to be processed W and the support wafer S is adjusted (step A9 in FIG. 13).

  Thereafter, after the first imaging unit 270 and the second imaging unit 271 are withdrawn from between the first holding unit 200 and the second holding unit 201, the upper chamber 282 is moved by a moving mechanism (not shown). Lower. Then, as shown in FIG. 6, the upper chamber 282 and the lower chamber 281 are brought into contact with each other, and the inside of the processing container 280 constituted by the upper chamber 282 and the lower chamber 281 is formed in a sealed space. At this time, a minute gap is formed between the processing target wafer W held by the first holding unit 200 and the support wafer S held by the second holding unit 201. That is, the wafer W to be processed and the support wafer S are not in contact with each other.

  Thereafter, the decompression mechanism 300 sucks the atmosphere in the processing container 280 and decompresses the processing container 280 to a vacuum state (step A10 in FIG. 13). In the present embodiment, the inside of the processing container 280 is depressurized to a predetermined vacuum pressure, for example, 10 Pa or less.

  Then, as shown in FIG. 19, compressed air is supplied to the pressure vessel 261, and the inside of the pressure vessel 261 is set to a predetermined pressure, for example, 10 kPa to 1 MPa. Here, the inside of the processing container 280 is maintained in a vacuum state, and the pressure container 261 is disposed in a vacuum atmosphere in the processing container 280. For this reason, the pressure pressed downward by the pressurizing mechanism 260, that is, the pressure transmitted from the pressure vessel 261 to the second holding unit 201 is a differential pressure between the pressure in the pressure vessel 261 and the pressure in the processing vessel 280. become. Then, the second holding unit 201 is pressed downward by the pressurizing mechanism 260, and the entire surface of the wafer W to be processed and the entire surface of the support wafer S come into contact with each other. When the wafer to be processed W and the support wafer S come into contact with each other, the wafer to be processed W and the support wafer S are sucked and held by the second holding unit 201 and the first holding unit 200, respectively. The positional deviation of the wafer S does not occur. Further, since the planar shape of the pressure vessel 261 is the same as the planar shape of the processing target wafer W and the supporting wafer S, the pressurizing mechanism 260 presses the processing target wafer W and the supporting wafer S over the entire surface. Since the inside of the processing container 280 is maintained in a vacuum state, generation of voids between the processing target wafer W and the supporting wafer S is suppressed even if the processing target wafer W and the supporting wafer S are brought into contact with each other. be able to. The pressure for pressing the second holding unit 201 by the pressurizing mechanism 260 is set according to the type of the adhesive G, the type of the device on the processing target wafer W, and the like.

  Thus, when the to-be-processed wafer W and the support wafer S are pressed by the pressurization mechanism 260, the to-be-processed wafer W and the support wafer S are heated by predetermined | prescribed temperature, for example, 100 to 400 degreeC by the heating mechanisms 211 and 241. In this way, by pressing the second holding unit 201 with a predetermined pressure by the pressurizing mechanism 260 while heating the wafer to be processed W and the support wafer S at a predetermined temperature, the wafer to be processed W and the support wafer S are brought into contact with each other. It is more strongly bonded and bonded (step A11 in FIG. 13).

Here, as shown in FIG. 18, the bonding surface S _J of the support wafer S before bonding, the thickness T _G of the adhesive G is greater than the thickness T _H hydrophobizing agent H. For this reason, in process A11, the adhesive G spreads to the outer peripheral part between the to-be-processed wafer W and the support wafer S, as shown in FIG. Therefore, the processing target wafer W and the support wafer S can be appropriately bonded.

  The overlapped wafer T in which the wafer to be processed W and the support wafer S are bonded in this way is transferred from the bonding unit 140 to the delivery unit 110 by the transfer arm 131 of the transfer unit 130. The overlapped wafer T transferred to the transfer unit 110 is transferred to the transfer arm 111 via the wafer support pins 112, and further transferred from the transfer arm 111 to the wafer transfer device 61.

Thereafter bonded wafer T is transferred to the transition unit 51 by the wafer transfer apparatus 61, as by the wafer transfer apparatus 22 of the subsequent unloading station 2 is transported to the cassette C _T of predetermined cassette mounting plate 11. In this way, a series of bonding processing of the processing target wafer W and the supporting wafer S is completed.

According to the above embodiment, after the application of the hydrophobizing agent H on the outer periphery of the joint surface S _J of the support wafer S in the step A1, the adhesive G on the bonding surface S _J of the support wafer S in the step A2 coating Is done. In this step A2, the application of the adhesive G by the hydrophobizing agent H on the outer peripheral portion of the support wafer S is suppressed. If it does so, adhesive G will not adhere to the conveyance apparatus which conveys support wafer S with which adhesive G was applied, and the processing device which performs the predetermined processing to the support wafer S concerned. Moreover, larger thickness T _H of the thickness T _G hydrophobizing agent H on the outer periphery of the support wafer S of adhesive G on the support wafer S. Then, in step A11, the adhesive G spreads to the outer peripheral portion between the wafer to be processed W and the support wafer S, and the wafer to be processed W and the support wafer S can be appropriately bonded.

  Further, as in the present embodiment, when so-called scan coating is performed in step A2 (coating apparatus 41), the discharge port 362a of the adhesive nozzle 362 is larger than the diameter of the support wafer S. Then, for example, if the hydrophobizing agent H is not applied to the outer peripheral portion of the support wafer S as in the present embodiment, the adhesive G supplied to the support wafer S from the adhesive nozzle 362 as shown in FIG. Is likely to protrude from the outer periphery of the support wafer S. The adhesive G that protrudes in this manner may adversely affect the transfer process of the support wafer S and other processing processes. In this regard, as described above, according to the present embodiment, the adhesive G is not applied to the outer peripheral portion of the support wafer S to which the hydrophobizing agent H is applied. Therefore, the present invention is particularly useful when the adhesive G is applied by scanning.

  Furthermore, in step A2, the application start position of the adhesive G by the adhesive nozzle 362 is set above the inner end of the hydrophobizing agent H as shown in FIGS. For this reason, it can suppress more reliably that the adhesive agent G is apply | coated to the outer peripheral part of the support wafer S. FIG.

  In the present embodiment, the hydrophobizing agent H and the adhesive G are applied to the support wafer S, in other words, the hydrophobizing agent H and the adhesive G are not applied to the wafer W to be processed. Here, in step A <b> 11, the adhesive G may protrude from the outer peripheral portion of the bonded superposed wafer T. After completing the bonding process in the bonding system 1, the wafer W to be processed is thinned. When the processing target wafer W is thinned, the outer periphery of the processing target wafer W is protected by the adhesive G if the protruding amount of the protruding adhesive G is appropriately controlled. Therefore, as in the present embodiment, if the hydrophobizing agent H is not applied to the outer peripheral portion of the wafer W to be processed, the adhesive G easily spreads on the outer peripheral portion of the wafer W to be processed, and protrudes from the outer peripheral portion. Cheap. Therefore, it is preferable to apply the hydrophobizing agent H and the adhesive G to the support wafer S from the viewpoint of protecting the outer peripheral portion of the wafer W to be processed.

  In addition, since the bonding system 1 includes the bonding devices 30 to 33, the hydrophobizing device 40, the coating device 41, and the heat treatment devices 42 to 47, the support wafer S is sequentially processed and the hydrophobizing agent is applied to the support wafer S. H and adhesive G are applied and heated to a predetermined temperature, and the front and back surfaces of the wafer W to be processed are reversed in the bonding apparatus 30. Thereafter, in the bonding apparatus 30, the support wafer S to which the hydrophobizing agent H and the adhesive G are applied and heated to a predetermined temperature is bonded to the wafer W to be processed whose front and back surfaces are reversed. As described above, according to the present embodiment, the processing target wafer W and the supporting wafer S can be processed in parallel. Further, while bonding the processing target wafer W and the supporting wafer S in the bonding apparatus 30, another processing target wafer W and the supporting wafer S are processed in the hydrophobizing apparatus 40, the coating apparatus 41, the heat treatment apparatus 42, and the bonding apparatus 30. You can also Therefore, the wafer W to be processed and the support wafer S can be bonded efficiently, and the throughput of the bonding process can be improved.

  In the coating apparatus 41 of the above embodiment, the support wafer S and the adhesive nozzle 362 are relatively moved by moving the adhesive nozzle 362 in the horizontal direction by the nozzle driving unit 363. The holding unit 350 that holds S may be moved in the horizontal direction. Alternatively, both the adhesive nozzle 362 and the holding unit 350 may be moved in the horizontal direction.

  In the above embodiment, the hydrophobizing device 40 applies the hydrophobizing agent H to the outer periphery of the support wafer S, and the coating device 41 applies the adhesive G to the support wafer S. The configuration of the coating device 41 is not limited to this. For example, the hydrophobizing agent H and the adhesive G may be applied to the support wafer S by using one coating apparatus 400 shown in FIGS. The coating apparatus 400 is provided in the second processing block G2 of the bonding system 1, for example, instead of the hydrophobizing apparatus 40 and the coating apparatus 41.

  The coating device 400 includes a processing container 410 that can be sealed inside. A loading / unloading port (not shown) for the support wafer S is formed on the side surface of the processing container 410 on the wafer transfer region 60 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

A spin chuck 420 serving as a rotation holding unit that holds and rotates the support wafer S is provided at the center of the processing container 410. The spin chuck 420 has a horizontal upper surface, and a suction port (not shown) for sucking the non-joint surface _SN of the support wafer S is provided on the upper surface, for example. The support wafer S can be sucked and held on the spin chuck 420 by suction from the suction port.

  Below the spin chuck 420, for example, a chuck drive unit 421 including a motor is provided. The spin chuck 420 can be rotated at a predetermined speed by the chuck driving unit 421. In addition, the chuck driving unit 421 is provided with an elevating drive source such as a cylinder, and the spin chuck 420 is movable up and down.

  Around the spin chuck 420, a cup 422 that receives and collects the liquid scattered or dropped from the support wafer S is provided. Connected to the lower surface of the cup 422 are a discharge pipe 423 for discharging the collected liquid and an exhaust pipe 424 for evacuating and exhausting the atmosphere in the cup 422.

  As shown in FIG. 23, a rail 430 extending along the Y direction (left and right direction in FIG. 23) is formed on the negative side of X direction (downward direction in FIG. 23) of the cup 422. The rail 430 is formed, for example, from the outside of the cup 422 on the Y direction negative direction (left direction in FIG. 23) side to the outside of the Y direction positive direction (right direction in FIG. 23) side. An arm 431 is attached to the rail 430.

  The arm 431 supports an adhesive nozzle 432 as a coating liquid supply unit that supplies the adhesive G to the support wafer S as shown in FIGS. 22 and 23. The arm 431 is movable on the rail 430 by a nozzle driving unit 433 shown in FIG. As a result, the adhesive nozzle 432 can move from the standby portion 434 installed on the outer side of the cup 422 on the positive side in the Y direction to above the center portion of the support wafer S in the cup 422, and further on the support wafer S. The support wafer S can be moved in the radial direction. The arm 431 can be moved up and down by a nozzle driving unit 433, and the height of the adhesive nozzle 432 can be adjusted.

  As shown in FIG. 22, an adhesive supply pipe 435 that supplies the adhesive G to the adhesive nozzle 432 is connected to the adhesive nozzle 432. The adhesive supply pipe 435 communicates with an adhesive supply source 436 that stores the adhesive G therein. The adhesive supply pipe 435 is provided with a supply device group 437 including a valve for controlling the flow of the adhesive G, a flow rate adjusting unit, and the like.

  Also, as shown in FIG. 23, a rail 440 extending along the Y direction (left-right direction in FIG. 23) is formed between the cup 422 and the rail 430. The rail 440 is formed, for example, from the outside of the cup 422 on the Y direction negative direction (left direction in FIG. 5) side to the vicinity of the center of the cup 422. An arm 441 is attached to the rail 440.

  The arm 441 supports a hydrophobizing agent nozzle 442 as a hydrophobizing agent supply unit that supplies the hydrophobizing agent H to the outer peripheral portion of the support wafer S as shown in FIGS. The arm 441 is movable on the rail 440 by a nozzle driving unit 443 shown in FIG. Thereby, the hydrophobizing agent nozzle 442 can move from the standby part 444 installed on the Y direction negative direction side of the cup 422 to above the outer peripheral part of the support wafer S in the cup 422, and further on the support wafer S. Can be moved in the radial direction of the support wafer S. The arm 441 can be moved up and down by a nozzle driving unit 443, and the height of the hydrophobizing agent nozzle 442 can be adjusted.

  The hydrophobizing agent nozzle 442 is connected to a hydrophobizing agent supply pipe 445 that supplies the hydrophobizing agent H to the hydrophobizing agent nozzle 442 as shown in FIG. The hydrophobizing agent supply pipe 445 communicates with a hydrophobizing agent supply source 446 that stores the hydrophobizing agent H therein. Further, the hydrophobizing agent supply pipe 445 is provided with a supply device group 447 including a valve for controlling the flow of the hydrophobizing agent H, a flow rate adjusting unit, and the like.

  In this embodiment, the arm 431 that supports the adhesive nozzle 432 and the arm 441 that supports the hydrophobizing agent nozzle 442 are attached to separate rails 430 and 440, respectively, but are attached to the same rail. May be. The adhesive nozzle 432 and the hydrophobizing agent nozzle 442 are supported by separate arms 431 and 441, respectively, but may be supported by the same arm.

  In addition, the operation of each unit in the coating apparatus 400 is controlled by the control unit 70 described above.

In such a case, when the support wafer S is attracted and held on the spin chuck 420 in step A1, the arm 441 moves the hydrophobizing agent nozzle 442 of the standby unit 444 to above the outer periphery of the support wafer S. Thereafter, while rotating the support wafer S by the spin chuck 420, and supplies the hydrophobizing agent H from a hydrophobic agent nozzle 442 on the outer periphery of the joint surface S _J of the support wafer S. Then, as shown in FIGS. 14 and 15, hydrophobizing agent H is applied over the outer periphery entire circumference of the joining surface S _J of the support wafer S.

Thereafter, in step A2, the hydrophobizing agent nozzle 442 is moved to the standby portion 444, and the adhesive nozzle 432 of the standby portion 434 is moved above the center portion of the support wafer S by the arm 431. Thereafter, while maintaining the rotation of the support wafer S by the spin chuck 420, and supplies the adhesive G from the adhesive nozzles 432 on the bonding surface S _J of the support wafer S. Supplied adhesive G is diffused toward the outer circumferential portion of the joint surface S _J of the support wafer S by centrifugal force. Then, the inside of the hydrophobizing agent H as shown in FIG. 18, the adhesive G is applied to the entire surface of the joint surface S _J of the support wafer S.

  Since the other steps A3 to A11 are the same as the steps A3 to A11 in the above embodiment, the description thereof is omitted.

  Also in this embodiment, the same effect as that of the above embodiment can be enjoyed. That is, while suppressing the adhesive G from being applied to the outer periphery of the support wafer S in the step A2, the adhesive G is spread to the outer periphery of the wafer W and the support wafer S in the step A11, and the wafer to be processed. W and the support wafer S can be bonded appropriately.

  In the above embodiment, the hydrophobizing agent H and the adhesive G are applied to the supporting wafer S in the steps A1 and A2, respectively. However, the hydrophobizing agent H and the adhesive G are applied to the wafer W to be processed. May be.

In the above embodiment, the wafer W to be processed and the support wafer S are bonded in a state where the wafer W to be processed is arranged on the lower side and the support wafer S is arranged on the upper side in the bonding apparatus 30. The upper and lower arrangements of the processing target wafer W and the supporting wafer S may be reversed. At this time, the first holding unit 200 may support the processing target wafer W, and the second holding unit 201 may support the supporting wafer S. Then, a step A1~A5 described above for wafer W, is applied to the bonding surface W _J of the wafer W and hydrophobizing agent H to glue G. Further, the above-described steps A6 to A8 are performed on the support wafer S, and the front and back surfaces of the support wafer S are reversed. And the process A9-A11 mentioned above is performed, and the to-be-processed wafer W and the support wafer S are joined.

  In the above embodiment, although the case where the adhesive G was used as a coating liquid was demonstrated, the coating liquid to which this invention is applied is not limited to this. For example, when bonding the wafer to be processed W and the support wafer S, in addition to the adhesive G, a protective agent for protecting the device on the wafer to be processed W, or the bonded wafer to be processed W and the support wafer S are bonded. In some cases, a release agent for appropriately peeling is provided. The present invention can also be applied when these protective agents and release agents are applied to the processing target wafer W or the supporting wafer S. For example, the present invention can be applied also when a resist solution is applied on the wafer W or the support wafer S.

  In the above embodiments, the case where the substrate to be processed and the support substrate are wafers has been described. However, the present invention is directed to a mask reticle for an FPD (flat panel display) or photomask other than the wafer to be processed and the support substrate. It can also be applied to other substrates such as.

  For example, in the above-described coating apparatus 41, when the coating liquid is applied to a rectangular glass substrate, the length of the discharge port 362a of the adhesive nozzle 362 may be matched with the inner length to which the hydrophobizing agent H is applied. Good. In such a case, since the adhesive G supplied from the adhesive nozzle 362 is not applied onto the hydrophobizing agent H on the outer peripheral portion of the glass substrate, the adhesive G is more reliably applied to the outer peripheral portion of the glass substrate. Can be suppressed.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood.

DESCRIPTION OF SYMBOLS 1 Joining system 2 Loading / unloading station 3 Processing station 30-33 Joining apparatus 40 Hydrophobizing apparatus 41 Coating apparatus 42-47 Heat processing apparatus 60 Wafer conveyance area 70 Control part 320 Spin chuck 332 Hydrophobizing agent nozzle 350 Holding part 360 Rail 361 Arm 362 Adhesive nozzle 363 Nozzle drive unit 400 Coating device 420 Spin chuck 432 Adhesive nozzle 442 Hydrophobizing agent nozzle G Adhesive H Hydrophobizing agent S Support wafer T Polymerized wafer W Processed wafer

Claims (7)

A substrate processing system for applying a coating liquid on a substrate,
A hydrophobizing apparatus comprising a hydrophobizing agent supplying unit for supplying a hydrophobizing agent to the outer periphery of the substrate, and a rotation holding unit for holding and rotating the substrate;
A coating liquid supply unit that supplies the coating liquid to the substrate, a holding unit that holds the substrate, and a movement mechanism that relatively moves the substrate held by the holding unit and the coating liquid supply unit in the horizontal direction. A coating device;
A controller that controls the hydrophobizing agent supply unit and the coating solution supply unit so that the film thickness of the coating solution on the substrate is larger than the film thickness of the hydrophobizing agent on the outer peripheral portion of the substrate;
Have
In the coating liquid supply part, a slit-shaped coating liquid discharge port longer than the diameter of the substrate is formed ,
The controller is
In the hydrophobizing apparatus, a hydrophobizing agent is applied from the hydrophobizing agent supply unit to the outer periphery of the substrate,
Thereafter, in the coating apparatus, the coating liquid supply unit is disposed inside the outer peripheral portion of the substrate on which the hydrophobizing agent is applied, and then the coating liquid supply unit is relative to the substrate held by the holding unit. The substrate processing system is characterized in that the hydrophobizing device and the coating device are controlled so as to be moved horizontally . The coating liquid is an adhesive that joins substrates,
The hydrophobizing agent supply unit, the coating liquid supply unit, a heat treatment apparatus for heating the substrate coated with the hydrophobizing agent and the adhesive to a predetermined temperature, and the substrates are bonded via the adhesive. A processing station comprising: a joining device;
The substrate or polymer substrate boards are joined, and further comprising a loading and unloading station for loading and unloading, the relative said processing station, a substrate processing system according to claim 1. The substrate processing system according to claim 2 , wherein the hydrophobizing agent and the adhesive are applied to a support substrate that supports a substrate to be processed. A substrate processing method for applying a coating liquid on a substrate,
A hydrophobizing step of supplying a hydrophobizing agent from the hydrophobizing agent supplying unit to the outer periphery of the substrate;
Thereafter, an application step of forming the application liquid supply unit and supplying the application liquid to the substrate from a slit-like discharge port longer than the diameter of the substrate,
The film thickness of the coating solution on the substrate is much larger than the thickness of the hydrophobic agent on the outer peripheral portion of the substrate,
In the hydrophobizing step, the hydrophobizing agent is supplied from the hydrophobizing agent supply unit to the outer peripheral portion of the substrate while rotating the substrate held by the rotation holding unit,
In the coating step, after the coating liquid supply unit is disposed inside the outer peripheral part of the substrate on which the hydrophobizing agent is applied, the coating liquid supply unit is relatively horizontal with respect to the substrate held by the holding unit. The substrate processing method is characterized in that the coating liquid is supplied from the coating liquid supply unit while being moved to the position . The coating liquid is an adhesive that joins substrates,
The substrate processing method according to claim 4 , wherein the hydrophobizing agent and the adhesive are applied to a support substrate that supports a substrate to be processed. A program that operates on a computer of a control unit that controls the substrate processing system so that the substrate processing method according to claim 4 is executed by the substrate processing system. A readable computer storage medium storing the program according to claim 6 .

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