JP6299624B2 - Coating film forming method, coating film forming apparatus, and storage medium - Google Patents

Description

  The present invention relates to a coating film forming apparatus, a coating film forming method, and a storage medium that form a coating film by supplying a chemical solution to a substrate.

  In a photolithography process in a semiconductor device manufacturing process, various chemicals such as a resist are supplied to a semiconductor wafer (hereinafter referred to as a wafer) to form a coating film. In a coating film forming apparatus for forming this coating film, film formation is performed by so-called spin coating, in which a chemical solution is discharged from a nozzle to the center of a rotating wafer and spread from the center to the periphery by centrifugal force. Is called.

  In the above-described coating film forming apparatus, before processing a wafer to manufacture a semiconductor device, various types of coating films are formed by an operator so that the film thickness of the coating film in each part of the surface of the wafer matches or substantially matches the target value. The parameters are adjusted. This adjustment operation is performed by measuring the film thickness of the coating film with a film thickness measuring device each time the parameter value is changed to form the coating film.

  However, as shown in the embodiment of the invention, there are many parameters for adjusting the film thickness, such as the temperature of the wafer, the temperature of the chemical solution, the discharge time of the chemical solution, and the number of rotations of the wafer during the discharge of the chemical solution. Therefore, even if the target value of the film thickness is the same in each adjustment operation, each value of the adjusted parameter may be different for each operation. In operating a coating film forming apparatus to actually mass-produce semiconductor devices, the parameter value has an appropriate range, and if a value deviating from the appropriate range is set, the film in each part of the wafer There is a possibility that the variation of the thickness becomes large or the deviation from the target value becomes large. If the worker is not familiar with the technology of the apparatus, there is a concern that a parameter having a value out of the appropriate range may be set, and improvement has been demanded. Patent Document 1 describes a technique for automatically setting the number of rotations of a wafer in the above adjustment work, but the parameters are various as described above, which is insufficient to solve the above-described problems. is there.

JP 2002-141273 A

  The present invention has been made in view of the above points, and in adjusting the various parameters for adjusting the film thickness of the coating film in the coating film forming apparatus for supplying the chemical solution to the substrate to form the coating film, To provide a technique capable of suppressing variation in parameter values for each adjustment operation and setting each parameter value within an appropriate range.

The coating film forming method of the present invention is a coating film forming method in which a chemical solution is supplied to a central portion of a rotating substrate, and the chemical solution is spread to a peripheral portion of the substrate by centrifugal force to form a coating film.
The coating film is formed based on a recipe including a first parameter and a second parameter for adjusting the film thickness distribution of the coating film in the plane of the substrate, and the first coating film in the plane of the substrate Obtaining a film thickness distribution of
Next, the film thickness distribution of the first coating film is approximated to a function of the first order representing the relationship between the position of the substrate and the film thickness, and films at different positions obtained from the function of the first order A first changing step of changing the first parameter using a value corresponding to a difference in thickness as a correction amount ;
Subsequently, forming a coating film on the substrate based on the recipe changed in the first changing step, obtaining a film thickness distribution of the second coating film on the substrate,
Thereafter, the film thickness distribution of the second coating film is approximated to a function of the second order larger than the first order, representing the relationship between the position of the substrate and the film thickness, and the second order. A second changing step of changing the second parameter using a value corresponding to a difference in film thickness at different positions obtained from the function of
Thereafter, based on the recipe changed by the first change step and the second change step, a step of forming a coating film on the substrate;
It is provided with.

In another coating film forming method of the present invention, a chemical solution is supplied to the central portion of a rotating substrate, and the chemical solution is spread to a peripheral portion of the substrate by centrifugal force to form a coating film.
The coating film is formed based on a recipe including a first parameter and a second parameter for adjusting the film thickness distribution of the coating film in the plane of the substrate, and the film of the coating film in the plane of the substrate Obtaining a thickness distribution;
The film thickness distribution of the coating film is approximated to a function of the first order that represents the relationship between the position of the substrate and the film thickness, and corresponds to the difference in film thickness at different positions obtained from the function of the first order. A first changing step of changing the first parameter using a value to be corrected as a correction amount ;
The film thickness distribution of the coating film and the film thickness distribution of the common coating film that are approximated to the function of the first order represent the relationship between the position of the substrate and the film thickness, and are larger than the first order. A second changing step of changing the second parameter by using a value corresponding to a difference in film thickness at different positions obtained from the second order function as a correction amount .
Based on the recipe changed by the first changing step and the second changing step, the coating film forming step after the recipe change for forming the coating film on the substrate;
It is provided with.

The coating film forming apparatus of the present invention is a coating film forming apparatus that supplies a chemical solution to a central portion of a rotating substrate and spreads the chemical solution to a peripheral portion of the substrate by centrifugal force to form a coating film.
A mounting unit that mounts the substrate and rotates by a rotation mechanism;
A chemical solution supply unit for supplying a chemical solution to the substrate placed on the placement unit,
A temperature adjustment mechanism for adjusting at least one of the temperature of the substrate or the temperature of the chemical before supplying the chemical to the substrate;
A film thickness detector for detecting a film thickness distribution of the coating film in the plane of the substrate;
A storage unit for storing a recipe including a first parameter and a second parameter for adjusting a film thickness distribution of the coating film in the plane of the substrate;
Forming the coating film based on the recipe, obtaining a film thickness distribution of the first coating film in a plane of the substrate, and then determining the film thickness distribution of the first coating film as the position of the substrate The first parameter is approximated to a function of the first order representing the relationship with the film thickness, and the first parameter is changed with a value corresponding to the difference in film thickness at different positions obtained from the function of the first order as a correction amount. A first changing step, and subsequently forming a coating film on the substrate based on the recipe changed in the first changing step, and obtaining a film thickness distribution of the second coating film on the substrate; Thereafter, the film thickness distribution of the second coating film is approximated to a function of the second order larger than the first order, representing the relationship between the position of the substrate and the film thickness, and the second order. The value corresponding to the difference in film thickness at different positions obtained from the function A second changing step of changing the second parameter as a correction amount, then a step of based on said first changing step and recipe changes by the second changing step, to form a coating film on a substrate, A control unit that outputs a control signal to execute
It is provided with.

Another coating film forming apparatus of the present invention is a coating film forming apparatus that supplies a chemical solution to a central portion of a rotating substrate and spreads the chemical solution to a peripheral portion of the substrate by centrifugal force to form a coating film.
A mounting unit that mounts the substrate and rotates by a rotation mechanism;
A chemical solution supply unit for supplying a chemical solution to the substrate placed on the placement unit,
A temperature adjustment mechanism for adjusting at least one of the temperature of the substrate or the temperature of the chemical before supplying the chemical to the substrate;
A film thickness detector for detecting a film thickness distribution of the coating film in the plane of the substrate;
A storage unit for storing a recipe including a first parameter and a second parameter for adjusting a film thickness distribution of the coating film in the plane of the substrate;
The step of forming the coating film based on the recipe and obtaining the film thickness distribution of the coating film in the plane of the substrate represents the relationship between the position of the substrate and the film thickness. A first changing step that changes the first parameter by using a value corresponding to a difference in film thickness at different positions obtained from the first order function as a correction amount , approximating the first order function ; The film thickness distribution of the coating film that is approximated to the function of the first order and the common film thickness distribution of the coating film represent the relationship between the position of the substrate and the film thickness, and are more than the first order. A second changing step of approximating a large second order function and changing the second parameter using a value corresponding to a difference in film thickness at different positions obtained from the second order function as a correction amount And the first change step and the second change step. A control unit based on the modified recipe, outputs a control signal to perform a coating film formation step after the recipe changes to form a coating film on a substrate, the result,
It is provided with.

The storage medium of the present invention stores a computer program used in a coating film forming apparatus for supplying a chemical solution to the central portion of a rotating substrate and spreading the chemical solution to a peripheral portion of the substrate by centrifugal force to form a coating film. A storage medium,
The computer program includes a group of steps so as to execute the coating film forming method.

  The present invention approximates the measured film thickness distribution of the substrate to a function of the first order representing the relationship between the position of the substrate and the film thickness and a function of the second order higher than the first order, The first parameter is changed based on a function of the first order, and the second parameter is changed based on a function of the second order. By changing the parameters in this way, variations in parameter values set between adjustment operations can be suppressed, and inappropriate values can be prevented from being set.

1 is a schematic configuration diagram of a coating and developing apparatus according to the present invention. It is a schematic longitudinal side view of the resist coating module constituting the coating and developing apparatus. It is a schematic longitudinal cross-sectional side view of the film thickness detection module which comprises a coating and developing device. It is a schematic block diagram of the control part which comprises an application | coating and image development apparatus. It is a chart figure which shows the process performed with a resist application module. It is a flowchart which shows the procedure in which the parameter for film thickness adjustment of the resist film performed with a coating and developing apparatus is set. It is a graph which shows the film thickness distribution of the resist film in the diameter of a wafer. It is a graph which shows the film thickness distribution of the resist film in the diameter of a wafer. It is a graph which shows the film thickness distribution of the resist film in the diameter of a wafer. It is a graph which shows the film thickness distribution of the resist film in the diameter of a wafer. It is a graph which shows the film thickness distribution of the resist film in the diameter of a wafer. It is a graph which shows the film thickness distribution of the resist film in the diameter of a wafer. It is a graph which shows the film thickness distribution of the resist film in the diameter of a wafer. It is a graph which shows the film thickness distribution of the resist film in the diameter of a wafer. It is a graph which shows the film thickness distribution of the resist film in the diameter of a wafer. It is a graph obtained from the function which approximated film thickness distribution. 2 is a plan view of the coating and developing apparatus. FIG. It is a perspective view of the coating and developing apparatus. It is a schematic longitudinal side view of the coating and developing apparatus.

(First embodiment)
FIG. 1 shows a schematic configuration of a coating and developing apparatus 1 constituting the coating film forming apparatus of the present invention. The coating / developing apparatus 1 is arranged in a clean room whose room temperature is adjusted to 23 ° C., for example. In the figure, C is a carrier that stores a plurality of wafers W, which are circular substrates, and conveys them to the coating and developing apparatus 1. In the figure, reference numeral 11 denotes a temperature adjustment module, which includes a stage whose temperature can be changed, and the temperature of the wafer W placed on the stage is adjusted so as to match the temperature of the stage.

  In the figure, reference numeral 21 denotes a resist coating module, which forms a resist film as a coating film by coating a resist on the surface of the wafer W by spin coating described in the background art section. In the figure, reference numeral 31 denotes a film thickness detection module constituting the film thickness detection unit. In the figure, reference numeral 12 denotes a wafer W transport mechanism, which transports the wafer W in the order of carrier C → temperature adjustment module 11 → resist coating module 21 → film thickness detection module 31 → carrier C, as indicated by arrows in FIG. . With the temperature adjusted by the temperature adjusting module 11, the wafer W is transferred to the resist coating module 21 and undergoes a resist coating process.

FIG. 2 shows the configuration of the resist coating module 21. In the figure, reference numeral 22 denotes a spin chuck which forms a substrate mounting portion, which holds the wafer W horizontally by sucking the central portion of the back surface of the wafer W. A rotation mechanism 23 rotates the wafer W held by the spin chuck 22 around the vertical axis. Reference numerals 24 and 25 respectively denote a resist discharge nozzle and a thinner discharge nozzle. The resist discharge nozzle 24 and the thinner discharge nozzle 25 are respectively a resist supply mechanism 24A for supplying a resist and a thinner to the nozzles 24 and 25 via a flow path, It is connected to the thinner supply mechanism 25A.
The resist supply mechanism 24A constitutes a chemical solution supply unit. In the figure, reference numeral 26 denotes a flow path temperature adjustment unit, which adjusts the temperature of the flow path connecting the resist supply mechanism 24A and the resist discharge nozzle 24, thereby allowing the resist discharged from the resist discharge nozzle 24 to the wafer W to be arbitrarily set. Can be adjusted to temperature.

  In the figure, reference numeral 27 denotes a cup that surrounds the wafer W held by the spin chuck 22. The resist discharge nozzle 24 and the thinner discharge nozzle 25 are configured to be movable between the outside of the cup 27 and the central portion of the wafer W in the cup 27 by a moving mechanism (not shown). In the figure, reference numeral 28 denotes an exhaust pipe that exhausts the inside of the cup 27. Reference numeral 29 denotes a drainage pipe, which removes liquid spilled from the wafer W into the cup 27. In the figure, reference numeral 20 denotes an air flow forming unit, which is provided above the cup 27 and supplies the atmosphere toward the cup 27 to form a descending air flow. The airflow forming unit 20 can change the temperature of the atmosphere supplied to the cup 27, and the ambient temperature around the wafer W in the cup 27 can be adjusted to an arbitrary temperature by this temperature change. Accordingly, the airflow forming unit 20 adjusts the temperature of the wafer W before resist application, and the airflow forming unit 20, the temperature adjusting module 11, and the flow path temperature adjusting unit 26 constitute a temperature adjusting mechanism.

  In the resist coating module 21, a resist film is formed on the entire surface of the wafer W by the spin coating described in the background art section. Also, the thinner discharged from the thinner discharge nozzle 25 onto the wafer W is applied to the entire surface of the wafer W by spin coating in the same manner as the resist. The thinner is a chemical that is applied to the wafer W before the resist and improves the wettability of the resist.

  FIG. 3 shows the configuration of the film thickness detection module 31. In the figure, 32 is a housing, 33 is a stage on which a wafer W provided in the housing 32 is placed, and 34 is a drive mechanism. The drive mechanism 34 is configured to freely rotate the wafer W and move horizontally in the front-rear direction and the left-right direction. In the figure, reference numeral 35 denotes an optical interference type film thickness meter, which includes a probe 35a, an optical fiber 35b, a spectroscope unit 35c including a spectroscope and a controller, provided so as to face the surface of the wafer W on the stage 33. Then, the spectrum of the reflected light of the light irradiated on the surface of the wafer W is acquired, and the data of the spectrum is transmitted to the control unit 4 described later as film thickness detection data. By moving the stage 33, film thickness detection data at a number of locations in the region along the diameter of the wafer W is acquired, and the thickness of the resist film at each location where the thickness detection data is acquired by the control unit 4 is measured. The

  The coating / developing apparatus 1 suppresses variations in the film thickness of the resist film in each part of the wafer W based on the measurement result of the film thickness of the resist film, and the average value of the film thickness in each part matches or substantially matches the target value. A recipe including parameters for changing the film thickness of the resist film in each in-plane portion of the wafer W can be automatically adjusted so as to match. The coating / developing apparatus 1 includes a control unit 4 that is a computer so that the recipe can be adjusted. FIG. 4 shows the configuration of the control unit 4. In the figure, reference numeral 40 denotes a bus, and a CPU 41 for performing various operations and a program storage unit 43 that is a storage medium of a computer in which a program 42 is stored are connected to the bus 40. Further, the modules 11, 21, and 31 and the transport mechanism 12 constituting the above-described coating and developing apparatus 1 are also connected to the bus 40.

  The program 42 is installed in the control unit 4 in a state stored in the program storage unit 43, and can send control signals to the respective units of the coating and developing apparatus 1 to control the operation thereof and execute the steps described below. Instructions are incorporated to make it happen. The program storage unit includes, for example, a flexible disk, a compact disk, a hard disk, an MO (magneto-optical disk), a memory card, and the like.

  The bus 40 is connected to a memory 44 that is a storage unit for storing the recipe. As a parameter constituting the recipe, there is a parameter group set with respect to the correspondence between the change in the rotation speed of the wafer W in the resist coating module 21 and the timing at which the thinner and the resist are discharged onto the wafer W. It is described as processing data. Based on this processing data, the number of rotations of the wafer W in the resist coating module 21, the supply of resist from the resist supply mechanism 24A to the resist discharge nozzle 24, and the supply of thinner to the thinner discharge nozzle 25 from the thinner supply mechanism 25A. Is controlled

In addition to the above processing data, the set temperature of the stage of the temperature adjustment module 11 is stored in the memory 44 as a parameter constituting the recipe, and the temperature of the stage is adjusted to be this set temperature. Further, as parameters constituting the recipe, the temperature of the resist discharged onto the wafer W in the resist coating module 21, the temperature of the atmosphere in the cup 27 of the resist coating module 21, and the time during which the resist is supplied to the wafer W described later The amount of resist supplied to the wafer W is stored in the memory 44. Based on these parameters, the temperature of the resist adjusted by the flow path temperature adjusting unit 26, the temperature of the air supplied from the airflow forming unit 20, and the supply amount of the resist supplied to the wafer W from the resist supply mechanism 24A, respectively. Be controlled.

  The upper part of FIG. 5 shows a transition of the rotation speed of the wafer W controlled based on the processing data stored in the memory 44 as a timing chart. With reference to FIG. 5, the transition of the rotational speed and the timing at which the resist and thinner are supplied will be described in time series. When the wafer W is placed on the spin chuck 22, the resist coating process is started. Then, at time t1, for example, thinner is discharged onto the wafer W in a state where rotation has stopped, and at time t2, discharge of the thinner stops, and the rotation speed of the wafer W increases from 0 rpm to A1 rpm, and is maintained at A1 rpm. The Subsequently, at time t3, the resist is discharged onto the wafer W, and the rotational speed is increased to A2 rpm and maintained at A2 rpm. Then, at time t4, the resist discharge is completed, and at time t5, the rotation speed of the wafer W is decreased to A3 rpm and maintained at A3 rpm. Thereafter, at time t6, the rotational speed is increased to A4 rpm, and is maintained at A4 rpm. After that, at time t7, the rotational speed is decreased to 0 rpm, and the resist coating process is completed. About the magnitude | size relationship of rotation speed A1-A4, it is A2> A4> A1> A3> 0 rpm.

  From time t <b> 2 to time t <b> 3, the thinner extends from the center of the wafer W to the peripheral edge, and the excess thinner is shaken off from the wafer W. From time t3 to t4, the resist is spread from the center portion of the wafer W to the peripheral portion. At times t5 to t6, the centrifugal force acting on the wafer W is suppressed, the resist moves from the peripheral portion to the center portion of the wafer W, and the film thickness distribution in the radial direction of the wafer W is adjusted. From time t6 to t7, the resist is dried to form a resist film.

  The control unit 4 stores the data in the memory 44 with respect to the rotation speed A2 of the wafer W at the time of resist discharge and the rotation speed A4 at the time of drying the resist and the set temperature of the stage of the temperature adjustment module 11 constituting the processing data. Rewrite and adjust automatically. The correspondence between these parameters and the film thickness of the wafer W will be described below.

  Since the centrifugal force acting on the wafer W increases as the rotational speed A2 increases, most of the resist discharged onto the wafer W moves from the central portion of the wafer W to the peripheral portion of the wafer W, so that the center of the wafer W is increased. The film thickness of the peripheral edge portion becomes larger than the peripheral portion. Further, as the rotational speed A4 is increased, the flow velocity of the airflow on the surface of the wafer W is increased, so that the solvent contained in the resist is more volatilized and the film thickness of the resist film is reduced on the entire surface of the wafer W.

  Further, the resist discharged onto the wafer W is dried on the wafer W at a speed corresponding to the temperature of the wafer W, and the fluidity is lowered. Therefore, by adjusting the temperature of the wafer W by the temperature adjustment module 11, the film thickness distribution of the resist film in the surface of the wafer W can be adjusted. For example, when the temperature of the wafer W is relatively high, the film thickness in the region between the central portion and the peripheral portion becomes larger than the central portion of the wafer W. Conversely, when the temperature of the wafer W is relatively low, the film thickness in the region between the central portion and the peripheral portion becomes smaller than the central portion of the wafer W.

  Subsequently, the parameter adjustment operation performed in the coating and developing apparatus 1 will be described with reference to the flowchart of FIG. 6 and the graphs of FIGS. 7 to 14. 7 to 14 are graphs showing the film thickness distribution of the resist film at the diameter of the wafer W, and the vertical axis of the graph shows the film thickness (unit: nm) of the resist film. The horizontal axis of the graph represents the position in the diameter of the wafer W. More specifically, the center of the wafer W is 0 mm, and the distance (unit: mm) away from the center is shown. A positive sign is attached to a distance away from the center of the wafer W toward one end of the wafer W, and a negative sign is attached to a distance away from the center of the wafer W toward the other end of the wafer W. In this example, the target value of the resist film thickness is set to 7180 nm. The plot P1 group in FIG. 7 represents this target value.

  For example, at the start of the adjustment operation, the set temperature of the stage of the temperature adjustment module 11 stored in the memory 44, the temperature of the resist discharged to the wafer W in the resist coating module 21, and the atmosphere in the cup 27 in the resist coating module 21 The temperature is, for example, 23 ° C. which is the same as the room temperature of the clean room. In the following description, the value of the parameter stored in the memory 44 at the start of the adjustment operation may be described as the initial value.

  When the adjustment operation is started, the first wafer W is transferred from the carrier C to the temperature adjustment module 11, and after the temperature is adjusted, the wafer W is transferred to the resist coating module 21 to perform a resist coating process. As described with reference to the upper timing chart of FIG. 5, the rotation speed of the wafer W changes and thinner and resist are supplied, and a resist film is formed on the first wafer W. Thereafter, the first wafer W is transferred to the film thickness detection module 31 to measure the film thickness, and the film thickness distribution of the resist film at the diameter of the wafer W is acquired. Further, the difference between the film thickness at the center of the wafer W and the target value of the film thickness in this film thickness distribution is acquired (step S1). FIG. 7 shows the film thickness of each part of the first wafer W measured in step S1 as a plot P2.

  Thereafter, the rotational speed A4 of the processing data stored in the memory 44 when the wafer W is dried is increased or decreased by, for example, 200 rpm with respect to the initial value. Here, it is assumed that the speed is reduced by 200 rpm. After the correction of the rotational speed A4, the second wafer W unloaded from the carrier C is transported in the order of the temperature adjustment module 11 and the resist coating module 21 to form a resist film. Thereafter, the second wafer W is transferred to the film thickness detection module 31, and the film thickness distribution of the resist film at the diameter of the wafer W is acquired (step S2). A plot P3 in FIG. 7 shows the film thickness of each part of the second wafer W measured in step S2.

  From the film thickness distribution of the first and second wafers W, for example, the amount of change in film thickness on the entire surface of the wafer W indicated by C1 in the graph of FIG. Assuming that the change amount C1 is proportional to the correction amount of the rotation speed A4, the correction amount (unit: rpm) of the rotation speed A4 and the change amount (unit: nm) of the film thickness of the entire surface of the wafer W Relationship is acquired. From this correspondence, the initial value of the rotation speed A4, and the difference between the film thickness at the center of the wafer W calculated in step S1 and the target value of the film thickness, the rotation speed A4 that sets the film thickness at the center of the wafer W to the target value. Is calculated, and the rotation speed A4 in the memory 44 is corrected to the calculated value (step S3).

  Subsequently, the third wafer W unloaded from the carrier C is transported in the order of the temperature adjustment module 11 and the resist coating module 21, and is transported to the film thickness detection module 31 after the resist film is formed. The film thickness distribution of the resist film at the diameter of the wafer W is acquired. A plot P4 in FIG. 8 shows the film thickness of each part of the third wafer W. When the film thickness distribution is acquired in this way, the plot P4 group is quadratic approximated, and a quadratic function with the film thickness and the distance from the center of the wafer W as the coordinate system is acquired. That is, a first order function indicating the correspondence between the position of the substrate and the film thickness is obtained. In FIG. 9, the quadratic curve obtained from this quadratic function is shown as B1, and the film thickness difference C2 between the center of the wafer W and the periphery of the wafer W in the quadratic curve B1 is acquired (step S4). ).

  Thereafter, the rotational speed A2 when the resist is discharged onto the wafer W in the processing data of the memory 44 is corrected so as to be increased or decreased by a predetermined amount with respect to the initial value. More specifically, this correction is performed so that the film thickness of each part of the wafer W is made uniform. That is, in the film thickness distribution represented by the quadratic curve B1, when the film thickness at the peripheral edge is smaller than the center of the wafer W, the rotational speed A2 is corrected so as to be increased by a predetermined amount with respect to the initial value. When the film thickness of the peripheral portion is larger than the center portion of the wafer W, the rotational speed A2 is corrected so as to be reduced by a predetermined amount with respect to the initial value. In the example shown in FIG. 9, in the film thickness distribution indicated by the quadratic curve B1, since the film thickness at the peripheral edge portion is smaller than the central portion of the wafer W, the rotational speed A2 is increased by a predetermined amount with respect to the initial value. It is corrected as follows.

  After the correction of the rotational speed A2, the fourth wafer W unloaded from the carrier C is transported in the order of the temperature adjustment module 11 and the resist coating module 21, and the resist film is formed. The film thickness distribution of the resist film at the diameter of the wafer W is acquired. The film thickness distribution of the fourth wafer W is also quadratic approximated similarly to the film thickness distribution obtained from the third wafer W, and a quadratic function is obtained. Also from this quadratic function, the film thickness difference C2 between the center of the wafer W and the periphery of the wafer W described in FIG. 9 is acquired (step S5).

  Subsequently, the amount of displacement between the film thickness difference C2 obtained from the third wafer W and the film thickness difference C2 obtained from the fourth wafer W is calculated. Assuming that the displacement amount (unit: nm) of C2 is proportional to the correction amount (unit rpm) of the rotational speed A2, for example, the correspondence relationship between the displacement amount of C2 and the correction amount of the rotational speed A2 is acquired. Then, from this correspondence, the film thickness difference C2 of the third wafer W, and the initial value of the rotation speed A2, the value of the rotation speed A2 at which the film thickness difference C2 becomes 0 is calculated and stored in the memory 44. The rotation speed A2 to be performed is corrected to the calculated value (step S6). A straight line B2 in FIG. 10 is an ideal film thickness distribution obtained when the resist coating process is performed next by correcting the rotation speed A2 corresponding to the first parameter in this way.

  The fifth wafer W unloaded from the carrier C is transferred in the order of the temperature adjustment module 11 and the resist coating module 21 to form a resist film, and then transferred to the film thickness detection module 31. The resist film thickness distribution in diameter is acquired. FIG. 11 shows an example of the film thickness distribution, and the film thickness of each part of the wafer W is shown by a plot P5. When the film thickness distribution is acquired in this way, the plot P5 group is quadratic approximated, and a quartic function having the film thickness and the distance from the center of the wafer W as a coordinate system is acquired. That is, a function of the second order indicating the correspondence between the position of the substrate and the film thickness is acquired. In FIG. 12, a quartic curve obtained from this quartic function is shown as B3. In this quartic curve B3, for example, the difference between the film thickness of the apex in the region between the central part and the peripheral part of the wafer W and the film thickness of the apex in the central part of the wafer W, indicated by C3 in the figure, is obtained. Is done. (Step S7)

  The approximate shape of the quartic curve B3 acquired in step S7 is M-type or W-type. More specifically, in the case of the M type, the film in the region between the central portion and the peripheral portion (hereinafter referred to as an intermediate portion for convenience of description) with respect to the film thickness of the central portion and the peripheral portion of the wafer W. When the thickness is large and W-shaped, the film thickness of the intermediate portion is smaller than the film thickness of the central portion and the peripheral portion of the wafer W. The set temperature of the stage of the temperature adjustment module 11 stored in the memory 44 is corrected so as to increase or decrease by a predetermined amount so that the film thickness distribution represented by the quartic curve is flattened. Specifically, for example, when the outline of the quartic curve is M-type, the set temperature of the stage of the temperature adjustment module 11 is corrected so as to be reduced by a predetermined amount with respect to the initial value of 23 ° C. When the outline of the next curve is W-shaped, the set temperature of the temperature adjustment module 11 is corrected so as to be increased by a predetermined amount with respect to the initial value of 23 ° C. In the example shown in FIG. 12, since the approximate shape of the quartic curve B3 is W type, the stage set temperature is corrected so as to increase by a predetermined amount with respect to the initial value.

  After correcting the set temperature of the stage, the sixth wafer W unloaded from the carrier C is transported in the order of the temperature adjustment module 11 and the resist coating module 21, and after the resist film is formed, the film thickness detection module 31. The film thickness distribution of the resist film at the diameter of the wafer W is acquired. Then, the film thickness distribution acquired from the sixth wafer W is fourth-order approximated in the same manner as the film thickness distribution acquired from the fifth wafer W, and a quartic function is acquired. Thereafter, with respect to the quartic curve obtained from the quartic function acquired from the sixth wafer W, the film thickness at the apex in the region between the central portion and the peripheral portion of the wafer W described in FIG. And the difference C3 between the film thickness at the apex at the center of the wafer W is acquired (step S8).

  Thereafter, the amount of displacement between the film thickness difference C3 obtained from the fifth wafer W and the film thickness difference C3 obtained from the sixth wafer W is calculated. Assuming that the displacement amount (unit: nm) of C3 and the correction amount (unit: ° C.) of the set temperature of the stage in the temperature adjustment module 11 are proportional, for example, the displacement amount of C3 and the correction amount of the set temperature of the stage Correspondence is acquired. Then, from this correspondence, the film thickness difference C3 of the fifth wafer W, and the initial value of the stage set temperature, the set temperature of the stage at which the film thickness difference C3 becomes 0 is calculated and stored in the memory 44. The set temperature of the stage to be performed is corrected to the calculated set temperature (step S9). A straight line B4 in FIG. 13 shows an ideal film thickness distribution obtained when the resist coating process is performed next by correcting the set temperature of the stage corresponding to the second parameter in this way. .

  Thereafter, the seventh wafer W is transported in the order of the temperature adjustment module 11 and the resist coating module 21, and after the resist film is formed, it is transported to the film thickness detection module 31. The film thickness distribution is obtained. FIG. 14 shows an example of the film thickness distribution, and the film thickness of each part of the wafer W is shown as a plot P6. The average value of the film thickness represented by this plot P6 is calculated, and the difference between the average value and the target value of the film thickness is calculated.

  Thereafter, the average value of the film thickness is made to coincide with the target value of the film thickness based on the correspondence relationship between the correction amount of the rotation speed A4 acquired in step S3 and the change amount of the film thickness of the entire surface of the wafer W. The correction amount of the rotation speed A4 is obtained, and the rotation speed A4 stored in the memory 44 is corrected based on the correction amount, and the parameter adjustment operation is completed (step S10). Since the rotational speed A4 has already been corrected in step S3, the correction of the rotational speed A4 in step S10 is a correction for finely adjusting the film thickness in each part of the wafer W.

  After completion of such parameter adjustment operation, the operation of the coating and developing apparatus 1 for manufacturing a semiconductor device is started. During this operation, the wafer W transferred from the carrier C is transferred to the temperature adjustment module 11 and the resist coating module 21 in order, and after temperature adjustment, the resist coating process is performed to form a resist film. In this resist coating process, since the rotational speeds A2 and A4 are corrected in the above-described steps S3 and S6, the rotational speed of the wafer W changes as shown in the lower timing chart of FIG. Then, by adjusting the parameters constituting the recipe according to the above-described series of steps, the resist film formed on the wafer W can be suppressed in the in-plane portions of the wafer W and the in-plane portions. The average value of the film thickness matches or almost matches the target value.

  As described above, in steps S4 to S6, the difference between the film thickness at the peripheral part and the film thickness at the central part of the wafer W is detected by approximating the film thickness distribution to a quadratic function. In order to suppress this, the rotation speed A2 at the time of supplying the resist is corrected. Further, in steps S7 to S9, by approximating the film thickness distribution to a quartic function, the film thickness distribution is grasped in more detail than in the case of approximating with a quadratic function. In addition, a difference in film thickness between the central part and the intermediate part is detected, and the set temperature of the stage of the temperature adjustment module 11 (the temperature of the wafer W) is corrected in order to suppress this difference. The corrections in steps S to S6 and S7 to S9 are performed for the purpose of suppressing the difference between the average value of the film thickness and the difference between the minimum value and the maximum value of the film thickness.

  As described above, according to the coating and developing apparatus 1, the film thickness of the peripheral portion and the film thickness of the central portion of the wafer W is based on the quadratic function obtained by quadratic approximation of the film thickness distribution of the wafer W. The rotational speed A2 at the time when the resist is supplied is corrected so that the difference between the two is suppressed. Further, the temperature adjustment module 11 corrects the temperature of the wafer W based on a quartic function obtained by quaternary approximation of the film thickness distribution of the wafer W so that the difference in film thickness within the surface of the wafer W can be suppressed. Is done. In this way, parameters corresponding to each function are changed among the parameter group for adjusting the film thickness. For this reason, it is possible to prevent different values from being set for the same type of parameter each time an adjustment operation is attempted, and thereby to use an inappropriate parameter for operating the coating and developing apparatus 1 for mass production of semiconductor devices. It is possible to prevent the value from being set. In addition, it is possible to prevent an increase in the types of parameters to be adjusted and to prevent an increase in the number of times the parameters of the same type are changed, thereby shortening the time required for parameter adjustment. .

  An example of an inappropriate parameter value will be described. When the coating / developing apparatus 1 is operated to mass-produce semiconductor devices, the time required for transporting the wafer W from the temperature adjustment module 11 to the resist coating module 21 may deviate from the scheduled time. As a specific example, while the wafer W is being processed by the resist coating module 21, the wafer W that has been processed from the resist coating module 21 while the transport mechanism 12 holds the wafer W whose temperature has been adjusted by the temperature adjustment module 11. It is conceivable that the apparatus waits until it is unloaded, and this waiting causes a shift in the time required for transportation. Then, as the set temperature of the stage of the temperature adjustment module 11, that is, the temperature of the wafer W whose temperature is adjusted by the temperature adjustment module 11 is farther from the room temperature of the clean room, the transfer time is affected. As a result, the amount of change in the temperature of the wafer W with respect to the deviation is increased, and as a result, the temperature of the wafer W when it is loaded into the resist coating module 21 is greatly deviated from the expected temperature. That is, the set temperature of the stage that is far away from the room temperature of the clean room is an inappropriate parameter value for operating the coating and developing apparatus 1 described above.

  However, in the above-described parameter adjustment operation, the set temperature of the stage of the temperature adjustment module 11 is corrected after the film thickness distribution of the wafer W is adjusted in advance by correcting the rotational speed A2. Since the corrections are performed in this order, for example, the set temperature of the stage is corrected before the rotational speed A2, and the film thickness of each part of the wafer W is set to be substantially uniform, and then the rotational speed. Compared with correcting A2, the correction amount of the set temperature of the stage can be kept small. Therefore, it is possible to prevent the set temperature of the stage from becoming an inappropriate parameter value.

  By the way, the resist discharge time from time t3 to time t4 shown in the timing chart of FIG. 5 and the amount of resist supplied to the wafer W from time t3 to time t4 are the same as the rotation speed A2 at the time of resist discharge. This is a parameter that can adjust the spread of the resist on the wafer W and adjust the film thickness distribution between the central portion and the peripheral portion of the wafer W. Therefore, in the above steps S5 to S6, instead of the rotation speed A2, the resist discharge time or the resist supply amount may be corrected.

  Further, the temperature of the resist discharged onto the wafer W and the temperature of the atmosphere inside the cup 27 are adjusted by adjusting the drying speed of the resist discharged onto the wafer W in the same manner as the set temperature of the stage of the temperature adjustment module 11. It is a parameter that can change the film thickness of the intermediate part with respect to the film thickness of the central part and the peripheral part. Therefore, in steps S8 and S9 described above, the temperature of the resist or the temperature of the atmosphere in the cup 27 may be corrected instead of the set temperature of the stage of the temperature adjustment module 11.

  When a value far from the room temperature of the clean room is set as the temperature of the resist, the temperature is likely to vary due to disturbance before the temperature of the resist is adjusted by the flow path temperature adjusting unit 26 and supplied to the wafer W. There is a risk. In addition, when the temperature of the atmosphere in the cup 27 is set to a value far from the room temperature of the clean room, the disturbance is applied after the air is supplied from the airflow forming unit 20 until it is supplied into the cup 27. Depending on the temperature, the temperature may be likely to vary. Accordingly, as with the set temperature of the stage of the temperature adjustment module 11, the values of the resist temperature and the temperature of the atmosphere in the cup 27 that are far from the room temperature of the clean room are inappropriate parameter values. However, when the resist temperature or the temperature of the atmosphere in the cup 27 is corrected instead of the set temperature of the stage of the temperature adjustment module 11 in steps S8 and S9, the resist temperature is corrected by correcting the rotational speed A2. Since it is performed later, it is possible to prevent such an inappropriate parameter value from being set.

  By the way, in the above-described steps S1 to S3, the correspondence between the displacement amount of the entire film thickness of the wafer W and the correction amount of the rotation speed A4 when the resist film is dried (hereinafter referred to as the film thickness-rotation speed A4 correspondence relation). However, by performing an experiment, the correspondence relationship between the film thickness and the rotational speed A4 is obtained in advance before performing the adjustment operation, and the correspondence relationship is stored in the memory of the control unit 4. deep. Then, the rotational speed A4 may be corrected based on the film thickness-rotational speed A4 correspondence stored in the memory. By doing so, it is possible to reduce the number of times that the temperature adjustment of the series of wafers W, the resist coating process on the wafer W, and the film thickness measurement are performed in the adjustment operation, and the time required for the adjustment operation can be further shortened. . It should be noted that the correspondence between the displacement amount of the film thickness difference C2 on the quadratic curve acquired in steps S4 to S6 and the correction amount of the rotation speed A2 and the quaternary curve acquired in steps S7 to S9. The correspondence relationship between the displacement amount of the film thickness C3 and the correction amount of the set temperature of the stage may be acquired in advance and stored in the memory, and the correction may be performed based on the stored correspondence relationship. .

  In steps S1 to S3 described above, the rotational speed A4 is corrected, and the film thickness of the wafer W is accurately adjusted to the average film thickness in a later step, and the film thickness-rotational speed A4 correspondence is obtained. It is done as a purpose. Since the rotation speed A4 is also corrected in step S10, when the film thickness-rotation speed A4 correspondence is acquired in advance as described above, the film thickness and film thickness at the center of the wafer W acquired in step S1. The controller 4 may determine whether or not the difference from the target value is within a preset allowable range, and it may be determined whether or not to correct the rotational speed A4 according to the determination result. Specifically, for example, when it is determined that it is out of the allowable range, the rotational speed A4 is corrected in accordance with the film thickness-rotational speed A4 correspondence relationship. The film thickness distribution of the resist film formed on the wafer W is approximated by a quadratic function. If it is determined that the value is within the allowable range, the rotation speed A4 is not corrected, and the film thickness distribution obtained in step S1 is approximated to a quadratic function, and then the steps after step S5 are performed. .

  In steps S1 to S3, the rotation speed A4 is corrected with the center of the wafer W as a reference position so that the film thickness at the reference position becomes a target value. However, the rotation speed A4 with a position other than the center as a reference position. May be corrected. Further, the film thickness distribution obtained from steps S1 and S2 is also approximated by a quadratic function to obtain a quadratic curve, and the film thickness at the reference position is determined based on the film thickness distribution represented by the quadratic curve. And the target value of the film thickness may be obtained to calculate the correction amount of the rotational speed A4.

  Incidentally, in steps S4 and S5, the film thickness distribution of the resist film may be approximated to a higher order function than the second order. In steps S7 and S8, the film thickness distribution of the resist film may be approximated to a higher order function than the fourth order. However, in steps S7 and S8, in order to grasp a more detailed film thickness distribution than in steps S4 and S5, the order of the function approximated in steps S7 and S8 is set to be the order of the function approximated in steps S4 and S5. Since the resist spreads uniformly in the circumferential direction of the wafer W by spin coating, the film thickness distribution of the resist film seen from one end side from the center of the wafer W and the film of the resist film seen from the center of the wafer W to the other end side The thickness distribution is substantially equal to each other. Therefore, in order to express the film thickness distribution in the diameter of the wafer W with high accuracy, the order of the function to be approximated is preferably an even order.

(Second Embodiment)
The parameter adjustment operation of the second embodiment will be described focusing on the differences from the adjustment operation of the first embodiment. First, similarly to step S1 of the first embodiment, the first wafer W is sequentially transferred to the temperature adjustment module 11, the resist coating module 21, and the film thickness detection module 31, and the resist film at the diameter of the wafer W is measured. A film thickness distribution is acquired (step 11). For example, it is assumed that the film thickness distribution indicated by the plot P2 group in FIG. 15 is obtained.

  Thereafter, the plot P2 group is quadratic approximated to obtain a quadratic function. B5 in FIG. 15 shows a quadratic curve obtained from this quadratic function. Further, the plot P2 group is fourth-order approximated to obtain a fourth-order function. Then, the film thickness distribution represented by the quadratic curve B5 is subtracted from the film thickness distribution represented by the quartic curve (not shown) obtained from this quartic function. More specifically, the difference between the film thickness value represented by the quartic curve having the same horizontal coordinate and the film thickness value represented by the quadratic curve B5 is calculated, and the diameter of the wafer W is calculated. This difference distribution is obtained. FIG. 16 shows a distribution of this difference with a curve B6.

  Subsequently, the difference C4 between the film thickness at the top of the quadratic curve B5 (the film thickness at the center of the wafer W) and the target value of the film thickness, and the film thickness at the center and the peripheral film thickness of the wafer W in the quadratic curve B5. The difference C5 is acquired. Further, for the difference distribution curve B6, a difference C6 between the film thickness difference at the apex at the center of the wafer W and the film thickness difference at the apex at the intermediate part of the wafer W is acquired (step 12).

  Thereafter, the rotational speeds A2 and A4 and the set temperature of the stage stored in the memory 44 are each corrected by a predetermined amount. After the correction, the second wafer W is sequentially transferred to the temperature adjustment module 11, the resist coating module 21, and the film thickness detection module 31 in the same manner as in step S11, and the film thickness distribution of the resist film at the diameter of the wafer W is acquired. (Step 13). The film thickness distribution of the second wafer W is also approximated by a quadratic function and a quartic function as in step S12, and the difference between the film thickness at the center of the wafer W and the target value of the film thickness in the quadratic curve B5. C4, the difference C5 between the film thickness at the center and the peripheral film thickness of the wafer W in the quadratic curve B5, and the difference C6 between the vertices in the difference distribution curve B6 are acquired (step S14). Then, for C4, C5, and C6, the difference between the value obtained in step S12 and the value obtained in step S14 is acquired.

  Assuming that the acquired difference for C4 and the correction amount for rotational speed A4 are in a proportional relationship, the correspondence between the difference for C4 and the correction amount for rotational speed A4 is acquired. From this correspondence, the initial value of the rotational speed A4, and C4 acquired in step S12, the rotational speed A4 that makes C4 0 is calculated, and A4 in the memory 44 is corrected to this calculated value. Further, the correspondence between the difference for C5 and the correction amount for the rotational speed A2 is acquired on the assumption that the difference for the acquired C5 and the correction amount for the rotational speed A2 are in a proportional relationship. From this correspondence, the initial value of the rotational speed A2, and C5 acquired in step S12, the rotational speed A2 that makes C5 0 is calculated, and A2 in the memory 44 is corrected to this calculated value. Further, the correspondence between the difference for C6 and the correction amount for the set temperature of the stage is acquired on the assumption that the difference for C6 and the correction amount for the set temperature of the stage are in a proportional relationship. From this correspondence, the initial value of the set temperature of the stage, and C6 acquired in step S12, the set temperature of the stage that makes C6 0 is calculated, and the set temperature of the stage in the memory 44 is corrected to this calculated value. (Step S15).

Subsequently, the third wafer W is sequentially transferred to the temperature adjustment module 11, the resist coating module 21, and the film thickness detection module 31, and the film thickness distribution of the resist film at the diameter of the wafer W is acquired (step S16). Then, as in step S10 of the first embodiment, an average value of the film thickness is calculated from the film thickness distribution of the third wafer W, and a difference between the average value and the target value of the film thickness is calculated. . Based on this difference, the correspondence between the difference for C4 acquired in step S15 and the correction amount of the rotational speed A4, and the rotational speed A4 stored in the memory, the rotational speed A4 that makes the difference zero. Is calculated, the rotational speed A4 stored in the memory 44 is corrected to the calculated value, and the parameter adjustment operation ends (step S17).
In the second embodiment, in addition to having the same effect as the first embodiment, the number of times the temperature adjustment of the wafer W, the resist coating process, and the film thickness measurement can be performed can be reduced. There is an advantage that the time required for the adjustment operation can be suppressed.

The technique described in the first embodiment can also be applied to the second embodiment. Specifically, for example, instead of approximating the film thickness distribution to a quartic function, it may be approximated to a higher order function. The present invention is not limited to being applied to an apparatus for forming a resist film, and can also be applied to an apparatus for forming an antireflection film or an apparatus for forming an insulating film such as polyimide.

  17 to 19 show an example of a detailed configuration of the coating and developing apparatus 1. 17, 18, and 19 are a plan view, a perspective view, and a schematic longitudinal side view of the coating and developing apparatus 1, respectively. The coating and developing apparatus 1 is configured by connecting a carrier block D1, a processing block D2, and an interface block D3 in a straight line. An exposure device D4 is connected to the interface block D3. In the following description, the arrangement direction of the blocks D1 to D3 is the front-rear direction. The carrier block D <b> 1 applies the carrier C, carries it in and out of the developing device 1, and transfers the wafer W from the carrier C via the mounting table 51, the opening / closing part 52, and the opening / closing part 52 of the carrier C. And a mounting mechanism 53.

  The processing block D2 is configured by laminating first to sixth unit blocks E1 to E6 for performing liquid processing on the wafer W in order from the bottom. For convenience of explanation, “BCT” is a process for forming a lower antireflection film on the wafer W, “COT” is a process for forming a resist film on the wafer W, and a process for forming a resist pattern on the exposed wafer W is performed. Sometimes expressed as “DEV”. In this example, as shown in FIG. 18, two BCT layers, COT layers, and DEV layers are stacked from the bottom. The wafer W is transferred and processed in parallel in the same unit block.

  Here, as a representative of the unit blocks, the COT layer E3 will be described with reference to FIG. A plurality of shelf units U are arranged in the front-rear direction on the left and right sides of the transport area 54 from the carrier block D1 to the interface block D3, and the resist coating module 21 and the protective film forming module ITC are arranged in the front-rear direction on the other side. Is provided. The protective film forming module ITC supplies a predetermined processing liquid onto the resist film and forms a protective film for protecting the resist film. The shelf unit U includes a heating module. The transfer area 54 is provided with a transfer arm F3 which is a transfer mechanism of the wafer W, and the transfer arm F3 and the transfer arm F4 provided on the COT layer E4 correspond to the transfer mechanism 12, respectively.

  The other unit blocks E1, E2, E5 and E6 are configured in the same manner as the unit blocks E3 and E4 except that the chemicals supplied to the wafer W are different. The unit blocks E1 and E2 include an antireflection film forming module for supplying a chemical solution for forming an antireflection film to the wafer W instead of the resist coating module 21, and the unit blocks E5 and E6 are provided with a developer as a chemical solution on the wafer W. A developing module is provided. In FIG. 19, the transfer arms of the unit blocks E1 to E6 are shown as F1 to F6.

  On the carrier block D1 side in the processing block D2, a tower T1 that extends vertically across the unit blocks E1 to E6 and a transfer arm 55 that is a transfer mechanism that can be moved up and down to transfer the wafer W to the tower T1. And are provided. The tower T1 includes a plurality of modules stacked on each other, and includes a delivery module TRS, the temperature adjustment module 11 and the film thickness detection module 31 described above. The transfer module TRS and the temperature adjustment module 11 provided at each height of the unit blocks E1 to E6 can transfer the wafer W to and from the transfer arms F1 to F6 of the unit blocks E1 to E6. Hereinafter, the temperature adjustment modules 11 provided at the respective heights of the unit blocks E1, E2, E3, and E4 are referred to as 11A, 11B, 11C, and 11D, respectively.

  The interface block D3 includes towers T2, T3, and T4 extending vertically across the unit blocks E1 to E6. The interface block D3 is a transfer mechanism that can be moved up and down to transfer the wafer W to the tower T2 and the tower T3. An interface arm 56, an interface arm 57 that is a transfer mechanism that can be moved up and down to transfer the wafer W to the tower T2 and the tower T4, and a wafer W between the tower T2 and the exposure apparatus D4. An interface arm 58 is provided.

  The tower T2 includes a delivery module TRS, a buffer module for storing and retaining a plurality of wafers W before exposure processing, a buffer module for storing a plurality of wafers W after exposure processing, and a temperature for adjusting the temperature of the wafers W. Although the adjustment modules and the like are stacked on each other, illustration of the buffer module and the temperature adjustment module is omitted here. In the coating and developing apparatus 1, a place where the wafer W is placed is described as a module. The towers T3 and T4 are also provided with modules, but the description thereof is omitted here.

  In the system composed of the coating / developing apparatus 1 and the exposure apparatus D4, the transport path of the wafer W when manufacturing the semiconductor device after adjusting the parameters will be described. The wafer W is transferred from the carrier C to the transfer module TRS0 of the tower T1 in the processing block D2 by the transfer mechanism 53. The wafer W is transferred from the delivery module TRS0 to the unit blocks E1 and E2 and transferred.

For example, when transferring the wafer W to the unit block E1, among the temperature adjustment modules 11 of the tower T1, the temperature adjustment module 11A corresponding to the unit block E1 (a transfer module capable of transferring the wafer W by the transfer arm F1). On the other hand, the wafer W is delivered from the TRS0. When the wafer W is transferred to the unit block E2, the wafer W is transferred from the TRS0 to the temperature adjustment module 11B corresponding to the unit block E2 in the transfer module TRS of the tower T1. Delivery of these wafers W is performed by the delivery arm 55. The wafer W thus distributed is transferred in the order of 11A (11B) → antireflection film forming module → heating module → tower T1 transfer module TRS1 (TRS2), and then corresponds to the unit block E3 by the transfer arm 55. The temperature adjustment module 11C and the temperature adjustment module 11D corresponding to the unit block E4 are distributed.

  The wafers W distributed to 11C and 11D in this way are transferred in the order of 11C (11D) → resist coating module 21 → heating module → protective film forming module ITC → heating module → tower T2 delivery module TRS. Thereafter, the wafer W is loaded into the exposure apparatus D4 through the tower T3 by the interface arms 56 and 58. The exposed wafer W is transferred between the towers T2 and T4 by the interface arm 57 and transferred to the transfer modules TRS5 and TRS6 of the tower T2 corresponding to the unit blocks E5 and E6, respectively. Thereafter, after being transferred to the heating module → the developing module → the heating module → the transfer module TRS of the tower T <b> 1, it is returned to the carrier C through the transfer mechanism 53.

During the parameter adjustment operation described in the above steps, the wafer W is transferred from the carrier C to the transfer module TRS0 of the tower T1 by the transfer mechanism 53, and by the transfer arm 55, the temperature adjustment module 11C (11D) → the resist coating module 21. → Tower T1 delivery module TRS3 (TRS4) → film thickness detection module 31 is transported in this order and returned to carrier C via transfer mechanism 53.

DESCRIPTION OF SYMBOLS 1 Application | coating and development apparatus 11 Temperature control module 21 Resist application module 22 Spin chuck 24A Resist supply mechanism 31 Film thickness detection module 4 Control part 42 Program 43 Program storage part 44 Memory

Claims (12)

In the coating film forming method of supplying a chemical solution to the central portion of the rotating substrate and spreading the chemical solution to the peripheral portion of the substrate by centrifugal force to form a coating film,
The coating film is formed based on a recipe including a first parameter and a second parameter for adjusting the film thickness distribution of the coating film in the plane of the substrate, and the first coating film in the plane of the substrate Obtaining a film thickness distribution of
Next, the film thickness distribution of the first coating film is approximated to a function of the first order representing the relationship between the position of the substrate and the film thickness, and films at different positions obtained from the function of the first order A first changing step of changing the first parameter using a value corresponding to a difference in thickness as a correction amount ;
Subsequently, forming a coating film on the substrate based on the recipe changed in the first changing step, obtaining a film thickness distribution of the second coating film on the substrate,
Thereafter, the film thickness distribution of the second coating film is approximated to a function of the second order larger than the first order, representing the relationship between the position of the substrate and the film thickness, and the second order. A second changing step of changing the second parameter using a value corresponding to a difference in film thickness at different positions obtained from the function of
Thereafter, based on the recipe changed by the first change step and the second change step, a step of forming a coating film on the substrate;
A method for forming a coating film, comprising: The recipe includes a third parameter for changing the film thickness throughout the surface of the substrate,
Before performing the step of obtaining the film thickness distribution of the first coating film, forming the coating film on the substrate based on the recipe, and obtaining the thickness of the coating film at the reference position of the substrate When,
Changing the third parameter based on the difference between the film thickness of the acquired reference position and the film thickness of the reference,
2. The coating film forming method according to claim 1, wherein in the step of obtaining the film thickness distribution of the first coating film, the coating film is formed based on a recipe in which the third parameter is changed. . In the coating film forming method of supplying a chemical solution to the central portion of the rotating substrate and spreading the chemical solution to the peripheral portion of the substrate by centrifugal force to form a coating film,
The coating film is formed based on a recipe including a first parameter and a second parameter for adjusting the film thickness distribution of the coating film in the plane of the substrate, and the film of the coating film in the plane of the substrate Obtaining a thickness distribution;
The film thickness distribution of the coating film is approximated to a function of the first order that represents the relationship between the position of the substrate and the film thickness, and corresponds to the difference in film thickness at different positions obtained from the function of the first order. A first changing step of changing the first parameter using a value to be corrected as a correction amount ;
The film thickness distribution of the coating film and the film thickness distribution of the common coating film that are approximated to the function of the first order represent the relationship between the position of the substrate and the film thickness, and are larger than the first order. A second changing step of changing the second parameter by using a value corresponding to a difference in film thickness at different positions obtained from the second order function as a correction amount .
Based on the recipe changed by the first changing step and the second changing step, the coating film forming step after the recipe change for forming the coating film on the substrate;
A method for forming a coating film, comprising: The recipe includes a third parameter for changing the film thickness throughout the surface of the substrate,
A third changing step of changing the third parameter based on the difference between the thickness of the coating film at the reference position of the substrate in the thickness distribution and the reference thickness;
The coating film forming step after the recipe change is performed based on the recipe changed by the first changing step, the second changing step, and the third changing step. Forming method. In the second changing step, the second parameter is the difference in film thickness obtained from the second order function in different positions and the difference in thickness obtained from the first order of the function at different positions 5. The method of forming a coating film according to claim 3, wherein a value corresponding to is changed as a correction amount . The second parameter is a temperature adjustment parameter for adjusting the temperature of the substrate or the temperature of the chemical solution,
6. The coating film forming method according to claim 1, wherein the first parameter is a parameter different from the parameter for temperature adjustment. The first changing step is based on a function of a first order obtained from a film thickness distribution of each coating film formed using the first parameter as a first value and a second value, respectively. Changing the first parameter;
The second changing step is based on a function of a second order obtained from the thickness distribution of each coating film formed with the second parameter as the third value and the fourth value, respectively. The coating film forming method according to claim 1, further comprising a step of changing the second parameter. In a coating film forming apparatus for supplying a chemical solution to the center of a rotating substrate and spreading the chemical solution to the peripheral edge of the substrate by centrifugal force to form a coating film,
A mounting unit that mounts the substrate and rotates by a rotation mechanism;
A chemical solution supply unit for supplying a chemical solution to the substrate placed on the placement unit,
A temperature adjustment mechanism for adjusting at least one of the temperature of the substrate or the temperature of the chemical before supplying the chemical to the substrate;
A film thickness detector for detecting a film thickness distribution of the coating film in the plane of the substrate;
A storage unit for storing a recipe including a first parameter and a second parameter for adjusting a film thickness distribution of the coating film in the plane of the substrate;
Forming the coating film based on the recipe, obtaining a film thickness distribution of the first coating film in a plane of the substrate, and then determining the film thickness distribution of the first coating film as the position of the substrate The first parameter is approximated to a function of the first order representing the relationship with the film thickness, and the first parameter is changed with a value corresponding to the difference in film thickness at different positions obtained from the function of the first order as a correction amount. A first changing step, and subsequently forming a coating film on the substrate based on the recipe changed in the first changing step, and obtaining a film thickness distribution of the second coating film on the substrate; Thereafter, the film thickness distribution of the second coating film is approximated to a function of the second order larger than the first order, representing the relationship between the position of the substrate and the film thickness, and the second order. The value corresponding to the difference in film thickness at different positions obtained from the function A second changing step of changing the second parameter as a correction amount, then a step of based on said first changing step and recipe changes by the second changing step, to form a coating film on a substrate, A control unit that outputs a control signal to execute
A coating film forming apparatus comprising: The recipe includes a third parameter for changing the film thickness throughout the surface of the substrate,
The control unit forms the coating film on the substrate based on the recipe before performing the step of obtaining the film thickness distribution of the first coating film, and the film of the coating film at the reference position of the substrate Performing a step of acquiring a thickness, and a step of changing the third parameter based on a difference between the film thickness of the acquired reference position and the reference film thickness;
The step of obtaining the film thickness distribution of the first coating film outputs a control signal so that the coating film is formed based on a recipe in which the third parameter is changed. 8. The coating film forming apparatus according to 8. In a coating film forming apparatus for supplying a chemical solution to the center of a rotating substrate and spreading the chemical solution to the peripheral edge of the substrate by centrifugal force to form a coating film,
A mounting unit that mounts the substrate and rotates by a rotation mechanism;
A chemical solution supply unit for supplying a chemical solution to the substrate placed on the placement unit,
A temperature adjustment mechanism for adjusting at least one of the temperature of the substrate or the temperature of the chemical before supplying the chemical to the substrate;
A film thickness detector for detecting a film thickness distribution of the coating film in the plane of the substrate;
A storage unit for storing a recipe including a first parameter and a second parameter for adjusting a film thickness distribution of the coating film in the plane of the substrate;
The step of forming the coating film based on the recipe and obtaining the film thickness distribution of the coating film in the plane of the substrate represents the relationship between the position of the substrate and the film thickness. A first changing step that changes the first parameter by using a value corresponding to a difference in film thickness at different positions obtained from the first order function as a correction amount , approximating the first order function ; The film thickness distribution of the coating film that is approximated to the function of the first order and the common film thickness distribution of the coating film represent the relationship between the position of the substrate and the film thickness, and are more than the first order. A second changing step of approximating a large second order function and changing the second parameter using a value corresponding to a difference in film thickness at different positions obtained from the second order function as a correction amount And the first change step and the second change step. A control unit based on the modified recipe, outputs a control signal to perform a coating film formation step after the recipe changes to form a coating film on a substrate, the result,
A coating film forming apparatus comprising: The recipe includes a third parameter for changing the film thickness throughout the surface of the substrate,
The control unit executes a third change step of changing the third parameter based on a difference between the film thickness of the coating film at the reference position of the substrate and the reference film thickness with respect to the film thickness distribution. Output the control signal as
The coating film forming step according to claim 10, wherein the coating film forming step after the recipe change is performed based on the recipe changed by the first changing step, the second changing step, and the third changing step. Forming equipment. A storage medium for storing a computer program used in a coating film forming apparatus for supplying a chemical solution to a central portion of a rotating substrate and spreading the chemical solution to a peripheral portion of the substrate by centrifugal force to form a coating film,
A storage medium, wherein the computer program includes a group of steps so as to execute the coating film forming method according to any one of claims 1 to 7.

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