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JP6301632B2 - Connection structure and copper particle-containing paste for forming the connection structure - Google Patents
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JP6301632B2 - Connection structure and copper particle-containing paste for forming the connection structure - Google Patents

Connection structure and copper particle-containing paste for forming the connection structure Download PDF

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JP6301632B2
JP6301632B2 JP2013229619A JP2013229619A JP6301632B2 JP 6301632 B2 JP6301632 B2 JP 6301632B2 JP 2013229619 A JP2013229619 A JP 2013229619A JP 2013229619 A JP2013229619 A JP 2013229619A JP 6301632 B2 JP6301632 B2 JP 6301632B2
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copper
substrate
conductor
contact portion
sintered body
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岩下 徹幸
徹幸 岩下
藤原 英道
英道 藤原
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Furukawa Electric Co Ltd
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Description

本発明は、接続構造体に関し、特に基板上に形成された導体の電気的接続を実現する接続構造体、および該接続構造体を形成するための銅粒子含有ペーストに関する。   The present invention relates to a connection structure, and more particularly, to a connection structure that realizes electrical connection of conductors formed on a substrate, and a copper particle-containing paste for forming the connection structure.

従来、電気回路基板の製造工程において、ペースト印刷による導通部形成が行われている。ペースト材料としては、これまでAgペーストが用いられてきたものの、微細配線、薄層積層基板等ではAgのイオンマイグレーションが問題となり、現在、Cuペーストの検討が進められている。このとき、基材となる有機基板や無機基板へのペーストの密着性が重要な特性となる。また、層間接続においてはビア接続部あるいはスルーホール接続部と電極間の接続、層内接続では電極−電極接続でペーストと電極との接合性が重要な特性となる。従って、通常、有機基板や無機基板への密着性を高めるため、ペーストに有機系バインダーを配合することが行われる。このとき、基板への密着性は高められるものの、有機系バインダーの残留により、良好な導電性を得ることができなかった。   Conventionally, a conductive portion is formed by paste printing in a manufacturing process of an electric circuit board. As the paste material, Ag paste has been used so far, but the ion migration of Ag becomes a problem in fine wiring, thin layered substrates, etc., and examination of Cu paste is now underway. At this time, the adhesiveness of the paste to the organic substrate or inorganic substrate serving as the base material is an important characteristic. Further, in the interlayer connection, the connection between the via connection or through-hole connection and the electrode, and in the intra-layer connection, the bondability between the paste and the electrode is an important characteristic in the electrode-electrode connection. Therefore, in order to improve the adhesion to an organic substrate or an inorganic substrate, an organic binder is usually added to the paste. At this time, although the adhesion to the substrate was improved, good conductivity could not be obtained due to the remaining organic binder.

このような問題を解消するべく、有機系バインダーを含まないか、あるいは有機系バインダーの添加量が少ないペーストを使用し、有機基板や無機基板への印刷を行う方法が提案されている(特許文献1)。   In order to solve such problems, there has been proposed a method for printing on an organic substrate or an inorganic substrate using a paste that does not contain an organic binder or has a small amount of organic binder added (Patent Document). 1).

特開2012−18783号公報JP 2012-18783 A

しかしながら、上記従来の方法においては、有機系バインダーや硬化剤の添加量を減らすことで、ペーストの基板への密着性を犠牲にして、導電性を改善しているが、本方法では密着性と導電性がトレードオフ関係にあるため、改善効果は限定的である。また、電極間を接続するために基板と導体の両方にペーストとの当接部が形成される用途においては、導体への接続性も重要となる。そこで、有機系バインダーを使用せずに、基板密着性、および、導体接続部の密着性と導電性を同時に改善する技術が求められている。   However, in the above conventional method, the conductivity is improved by sacrificing the adhesiveness of the paste to the substrate by reducing the addition amount of the organic binder and the curing agent. Since the conductivity is in a trade-off relationship, the improvement effect is limited. Further, in applications where the contact portion with the paste is formed on both the substrate and the conductor in order to connect the electrodes, the connectivity to the conductor is also important. Therefore, there is a need for a technique that can simultaneously improve the substrate adhesion and the adhesion and conductivity of the conductor connecting portion without using an organic binder.

本発明の目的は、層間や電極間での良好な電気的接続性を維持しつつ、基板に対する密着性と導体に対する密着性の双方を向上することができ、信頼性の高い接続を実現することができる接続構造体、およびその接続構造体を形成するための銅粒子含有ペーストを提供することにある。   It is an object of the present invention to improve both the adhesion to a substrate and the adhesion to a conductor while maintaining good electrical connectivity between layers and electrodes, and to realize a highly reliable connection. It is an object of the present invention to provide a connection structure that can be used, and a copper particle-containing paste for forming the connection structure.

上記目的を達成するために、本発明の接続構造体は、基板上で回路の少なくとも一部を形成する複数の銅導体と、前記複数の導体間を接続する銅焼結体とを備え、前記銅焼結体は、前記基板と当接する基板当接部と、前記銅導体と当接する導体当接部とを有し、前記銅焼結体内の酸素濃度は、EDX法(エネルギー分散型X線分析法)により計量された平均原子数濃度で10%未満であり、前記基板当接部の酸素濃度は、前記導体当接部の酸素濃度より高いことを特徴とする。   To achieve the above object, a connection structure of the present invention comprises a plurality of copper conductors forming at least a part of a circuit on a substrate, and a copper sintered body connecting the plurality of conductors, The copper sintered body has a substrate contact portion that contacts the substrate and a conductor contact portion that contacts the copper conductor, and the oxygen concentration in the copper sintered body is determined by the EDX method (energy dispersive X-ray). The average atomic number concentration measured by the analysis method is less than 10%, and the oxygen concentration of the substrate contact portion is higher than the oxygen concentration of the conductor contact portion.

また、前記基板当接部の酸素濃度は、EDX法により計量された原子数濃度で6%を超え10%以下であり、前記導体当接部の酸素濃度は、EDX法により計量された原子数濃度で1%以上6%以下である。   The oxygen concentration of the substrate contact portion is more than 6% and 10% or less in terms of the number of atoms measured by the EDX method, and the oxygen concentration of the conductor contact portion is the number of atoms measured by the EDX method. The concentration is 1% or more and 6% or less.

好ましくは、前記複数の銅導体及び前記銅焼結体が前記基板上に形成され、前記銅焼結体の一部が、前記複数の銅導体の少なくとも一部と前記基板の一部とを覆って形成され、前記基板当接部が前記基板上に配置され、前記導体当接部が前記銅導体上に配置される。   Preferably, the plurality of copper conductors and the copper sintered body are formed on the substrate, and a part of the copper sintered body covers at least a part of the plurality of copper conductors and a part of the substrate. The substrate contact portion is disposed on the substrate, and the conductor contact portion is disposed on the copper conductor.

また好ましくは、前記銅焼結体が、前記基板の厚さ方向に貫通して設けられた貫通孔内に埋めるように形成され、前記銅導体が、前記貫通孔内に形成された前記銅焼結体の両端面を覆って配置され、前記基板当接部が、前記貫通孔の内周面に当接して配置され、前記導体当接部が、前記銅導体に当接して配置される。   Preferably, the copper sintered body is formed so as to be embedded in a through hole provided so as to penetrate in the thickness direction of the substrate, and the copper conductor is formed in the copper hole formed in the through hole. It arrange | positions covering the both end surfaces of a bonded body, the said board | substrate contact part is arrange | positioned in contact with the internal peripheral surface of the said through-hole, and the said conductor contact part is arrange | positioned in contact with the said copper conductor.

また、前記基板当接部の厚さが、10μm以下であるのが好ましい。   Moreover, it is preferable that the thickness of the substrate contact portion is 10 μm or less.

上記目的を達成するために、本発明の銅粒子含有ペーストは、基板上で回路の少なくとも一部を形成する、複数の銅導体間を接続する銅焼結体形成用の銅粒子ペーストであって、X線回折測定においてCu回折スペクトルのピーク高さをH1、CuO回折スペクトルのピーク高さをH2としたとき、X線回折ピーク強度比(H2/[H1+H2])が、0.以上0.86以下である、表面層が酸化銅からなる銅粒子と、溶媒として分子内にヒドロキシル基を2個以上有するポリオールとを含有することを特徴とする。 To achieve the above object, the copper particle-containing paste of the present invention is a copper particle paste for forming a copper sintered body that connects between a plurality of copper conductors and forms at least a part of a circuit on a substrate. In the X-ray diffraction measurement, when the peak height of the Cu diffraction spectrum is H1, and the peak height of the Cu 2 O diffraction spectrum is H2, the X-ray diffraction peak intensity ratio (H2 / [H1 + H2]) is 0. 8 or more It is characterized by containing copper particles whose surface layer is made of copper oxide, which is 86 or less, and a polyol having two or more hydroxyl groups in the molecule as a solvent.

また好ましくは、前記ポリオールが、エチレングリコール、ジエチレングリコール、グリセリン、1,2−プロパンジオール、1,3−プロパンジオール、1,2−ブタンジオール、1,3−ブタンジオール、1,4−ブタンジオール、2−ブテン−1,4−ジオール、ペンタンジオール、ヘキサンジオール、オクタンジオール、1,1,1−トリスヒドロキシメチルエタン、2−エチル−2−ヒドロキシメチル−1,3−プロパンジオール、1,2,6−ヘキサントリオール、1,2,3−ヘキサントリオール、1,2,4−ブタントリオール、トレイトール、エリスリトール、ペンタエリスリト−ル、キシリトール、ソルビトール、ペンチト−ル、テルピネオール及びヘキシトールからなる群から選択される1種又は2種以上である。   Also preferably, the polyol is ethylene glycol, diethylene glycol, glycerin, 1,2-propanediol, 1,3-propanediol, 1,2-butanediol, 1,3-butanediol, 1,4-butanediol, 2-butene-1,4-diol, pentanediol, hexanediol, octanediol, 1,1,1-trishydroxymethylethane, 2-ethyl-2-hydroxymethyl-1,3-propanediol, 1,2, Selected from the group consisting of 6-hexanetriol, 1,2,3-hexanetriol, 1,2,4-butanetriol, threitol, erythritol, pentaerythritol, xylitol, sorbitol, pentitol, terpineol and hexitol 1 type, or 2 or more types.

本発明によれば、銅焼結体内の酸素濃度は、EDX法により計量された平均原子数濃度にて10%未満である。また、銅焼結体は、基板と当接する基板当接部と、銅導体と当接する導体当接部とを有し、基板当接部の酸素濃度が導体当接部の酸素濃度より高い。これにより、銅焼結体と銅導体との界面における電気的接続性を損なうこと無く、銅焼結体と基板との界面における密着性、および、銅焼結体と導体との界面における密着性を向上させることができる。したがって、層間あるいは電極間で信頼性の高い接続を実現することができる。   According to the present invention, the oxygen concentration in the copper sintered body is less than 10% in terms of the average atomic number concentration measured by the EDX method. The copper sintered body has a substrate contact portion that contacts the substrate and a conductor contact portion that contacts the copper conductor, and the oxygen concentration of the substrate contact portion is higher than the oxygen concentration of the conductor contact portion. As a result, the adhesiveness at the interface between the copper sintered body and the substrate and the adhesiveness at the interface between the copper sintered body and the conductor are obtained without impairing the electrical connectivity at the interface between the copper sintered body and the copper conductor. Can be improved. Therefore, a highly reliable connection can be realized between the layers or the electrodes.

本発明の実施形態に係る接続構造体を概略的に示す図であり、(a)は平面図、(b)は線A−Aに沿う断面図である。It is a figure which shows schematically the connection structure which concerns on embodiment of this invention, (a) is a top view, (b) is sectional drawing which follows line AA. 図1(b)の部分拡大断面図である。It is a partial expanded sectional view of FIG.1 (b). 図1の接続構造体の変形例を示す断面図である。It is sectional drawing which shows the modification of the connection structure of FIG. 図1の接続構造体を形成するためのペーストに含有される銅微粒子の酸化度と銅焼結体の酸化濃度との関係を示す図である。It is a figure which shows the relationship between the oxidation degree of the copper fine particle contained in the paste for forming the connection structure of FIG. 1, and the oxidation density | concentration of a copper sintered compact.

以下、本発明の実施形態を図面を参照しながら詳細に説明する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

図1は、本実施形態に係る接続構造体の構成を概略的に示す平面図であり、(a)は平面図、(b)は線A−Aに沿う断面図である。また、図2は、図1(b)の部分拡大断面図である。   1A and 1B are plan views schematically showing a configuration of a connection structure according to the present embodiment, in which FIG. 1A is a plan view and FIG. 1B is a cross-sectional view taken along line AA. FIG. 2 is a partially enlarged sectional view of FIG.

図1(a)に示すように、接続構造体は、基板1上で回路の一部を形成する2つの銅導体2,2と、該2つの銅導体2,2間を接続する銅焼結体3とを備えている。   As shown in FIG. 1 (a), the connection structure is composed of two copper conductors 2 and 2 that form part of a circuit on a substrate 1 and sintered copper that connects the two copper conductors 2 and 2 together. And a body 3.

基板1は、エポキシ樹脂やポリイミド樹脂などの有機基板、あるいはガラス(例えば、ホウケイ酸ガラス・アルミノホウケイ酸ガラス・アルミノケイ酸ガラス)などの無機基板である。   The substrate 1 is an organic substrate such as an epoxy resin or a polyimide resin, or an inorganic substrate such as glass (for example, borosilicate glass, aluminoborosilicate glass, or aluminosilicate glass).

2つの銅導体2,2は、基板の主面1a上にスクリーン印刷法などで形成される導体パターンであり、所定距離を隔てて形成されている。銅導体2の厚さは、例えば100μm以下であり、エポキシ基板などの有機基板の場合には厚さ10μm程度の銅導体、ガラス基板などの無機基板の場合には厚さ1.0μm程度の銅導体が選定される。なお、銅導体2は銅又は銅合金を含有した導体である。   The two copper conductors 2 and 2 are conductor patterns formed on the main surface 1a of the substrate by a screen printing method or the like, and are formed at a predetermined distance. The thickness of the copper conductor 2 is, for example, 100 μm or less. In the case of an organic substrate such as an epoxy substrate, a copper conductor having a thickness of about 10 μm, or in the case of an inorganic substrate such as a glass substrate, a copper having a thickness of about 1.0 μm. A conductor is selected. The copper conductor 2 is a conductor containing copper or a copper alloy.

(銅焼結体)
銅焼結体3は、2つの銅導体2,2を電気的に接続する略長尺の銅又は銅合金を含有する導体であり、後述する銅微粒子含有ペーストを所定位置に塗布した後、加熱、焼成することにより形成される。この銅焼結体3の厚さは、銅導体2の厚さに応じて決定され、主に電気抵抗の観点から、銅導体2の厚さと同じかそれより大きくなるように形成され、好ましくは厚さが2倍程度となるように形成される。あるいは、製品設計上、厚さの制約がある場合は、制約の範囲内で出来るだけ大きくなるように形成される。
(Copper sintered body)
The copper sintered body 3 is a conductor containing a substantially long copper or copper alloy that electrically connects the two copper conductors 2, 2, and after applying a copper fine particle-containing paste described later to a predetermined position, heating It is formed by firing. The thickness of the copper sintered body 3 is determined according to the thickness of the copper conductor 2 and is formed mainly from the viewpoint of electrical resistance so as to be equal to or greater than the thickness of the copper conductor 2, preferably It is formed so that the thickness is about twice. Alternatively, when there is a thickness limitation in product design, it is formed to be as large as possible within the limitation range.

具体的には、銅焼結体3は、図1(b)及び図2に示すように、基板1と当接する基板当接部31と、2つの銅導体2,2と当接する導体当接部32,32とを有している。本実施形態では、基板当接部31が基板1の主面1a上に配置され、導体当接部32が銅導体2の上面2a上および側面2bに当接して配置されている。そして基板当接部31は、基板1との当接面31aを含む高酸素濃度層で構成され、導体当接部32は、銅導体2との当接面32aを含む低酸素濃度層で構成されている。なお、導体当接部32は、その一部が基板1の主面1aと当接するが、当該部分は銅導体2の側面2bに当接して配置されているため低酸素濃度層で構成されている。   Specifically, as shown in FIGS. 1B and 2, the copper sintered body 3 includes a substrate contact portion 31 that contacts the substrate 1 and a conductor contact that contacts the two copper conductors 2 and 2. Parts 32 and 32. In this embodiment, the substrate contact portion 31 is disposed on the main surface 1 a of the substrate 1, and the conductor contact portion 32 is disposed on the upper surface 2 a and the side surface 2 b of the copper conductor 2. The substrate contact portion 31 is configured by a high oxygen concentration layer including a contact surface 31 a with the substrate 1, and the conductor contact portion 32 is configured by a low oxygen concentration layer including a contact surface 32 a with the copper conductor 2. Has been. A part of the conductor abutting portion 32 abuts on the main surface 1 a of the substrate 1, but the portion is arranged in abutment with the side surface 2 b of the copper conductor 2, so that the conductor abutting portion 32 is composed of a low oxygen concentration layer. Yes.

銅焼結体3全体の酸素濃度は、EDX法により計量された平均原子数濃度で10%未満であり、好ましくは5%以上9%未満、より好ましくは7%以上8%未満である。銅焼結体全体の酸素濃度が高すぎると、電気抵抗が増大し、電気的接続性に劣る。   The oxygen concentration of the entire copper sintered body 3 is less than 10% in terms of the average atomic number concentration measured by the EDX method, preferably 5% or more and less than 9%, more preferably 7% or more and less than 8%. If the oxygen concentration of the entire copper sintered body is too high, the electrical resistance increases and the electrical connectivity is poor.

基板当接部31、すなわち高酸素濃度層の酸素濃度は、EDX法により計量された原子数濃度(mol%)で6%を超え10%以下、より好ましくは8%以上9%以下である。基板当接部31の酸素濃度を6.0%を超え10%以下とすることで、樹脂基板表面のC原子と基板当接部のO原子とが結合し、あるいはガラス基板表面のSi原子と基板当接部のO原子とが結合し、基板1との密着性が向上すると推察される。また基板当接部31は、導電パスから離れた位置に形成されるため、酸素濃度が比較的高くても電気的接続性に影響はない。基板当接部31の酸素濃度が6.0%未満であると、基板1との密着性に劣り、10%を超えると電気抵抗に影響を及ぼし、電気的接続性に劣る。   The oxygen concentration of the substrate contact portion 31, that is, the high oxygen concentration layer, is more than 6% and not more than 10%, more preferably not less than 8% and not more than 9% in terms of atomic number concentration (mol%) measured by the EDX method. By setting the oxygen concentration of the substrate contact portion 31 to more than 6.0% and not more than 10%, C atoms on the resin substrate surface and O atoms on the substrate contact portion are combined, or Si atoms on the glass substrate surface are combined. It is presumed that the O atom in the substrate contact portion is bonded to improve the adhesion with the substrate 1. Further, since the substrate contact portion 31 is formed at a position away from the conductive path, the electrical connectivity is not affected even if the oxygen concentration is relatively high. If the oxygen concentration of the substrate contact portion 31 is less than 6.0%, the adhesion to the substrate 1 is poor, and if it exceeds 10%, the electrical resistance is affected and the electrical connectivity is poor.

導体当接部32、すなわち低酸素濃度層の酸素濃度は、EDX法により計量された原子数濃度で1%以上6%以下、好ましくは3%以上6%以下、より好ましくは3%以上3.5%以下である。導体当接部32の酸素濃度を1%以上6%以下とすることで、導体当接部32のCu原子と銅導体2のCu原子とが結合し、密着性が向上する。導体当接部32は、導電パス上に形成されるが、銅原子に対する酸化銅原子の比率が低いため、十分な電気的接続性を保つことができる。導体当接部32の酸素濃度が1%未満であると銅導体2との密着性に劣り、6%を超えると、電気抵抗となり、電気的接続性に劣る。   The oxygen concentration of the conductor contact portion 32, that is, the low oxygen concentration layer is 1% or more and 6% or less, preferably 3% or more and 6% or less, more preferably 3% or more and 3% or less in terms of the number of atoms measured by the EDX method. 5% or less. By setting the oxygen concentration of the conductor contact portion 32 to 1% or more and 6% or less, the Cu atoms of the conductor contact portion 32 and the Cu atoms of the copper conductor 2 are bonded to improve the adhesion. The conductor contact portion 32 is formed on the conductive path, but can maintain sufficient electrical connectivity because the ratio of copper oxide atoms to copper atoms is low. When the oxygen concentration of the conductor abutting portion 32 is less than 1%, the adhesion to the copper conductor 2 is poor, and when it exceeds 6%, the electric resistance is obtained and the electrical connectivity is poor.

基板当接部31の厚さは0μm超10μm以下であることが好ましい。基板当接部31は酸素濃度が高いため、その厚さが10μmを超えると、銅焼結体3全体の導電性を低下させてしまう。なお、基板当接部31の厚さ方向は基板1の厚さ方向と同じである。また、導体当接部32の厚さも0μm超10μm以下であることが好ましい。   The thickness of the substrate contact portion 31 is preferably more than 0 μm and 10 μm or less. Since the substrate contact portion 31 has a high oxygen concentration, if the thickness exceeds 10 μm, the conductivity of the entire copper sintered body 3 is lowered. The thickness direction of the substrate contact portion 31 is the same as the thickness direction of the substrate 1. Also, the thickness of the conductor contact portion 32 is preferably more than 0 μm and 10 μm or less.

(銅微粒子含有ペースト)
銅微粒子含有ペーストは、銅微粒子10〜90重量%、残部(90〜10質量%)が有機分散媒からなる導体形成用複合材である。銅濃度が10重量%より低いと、厚い焼結体を形成し難くなり、電気的接続性に劣る。また、銅濃度が90重量%より高いと、ペーストを金属基板あるいは銅導体に塗布することが困難となる。ペーストに含有される銅微粒子の平均粒径(一次粒子の平均粒径)は、10nm〜300nmである。本実施形態では有機分散媒はポリオールからなるが、これに限らず、ポリオールを含有し、添加剤等の他の材料を含有していてもよい。なお、銅微粒子は銅合金であってもよい。
(Copper fine particle containing paste)
The copper fine particle-containing paste is a conductor-forming composite material comprising 10 to 90% by weight of copper fine particles and the balance (90 to 10% by mass) of an organic dispersion medium. When the copper concentration is lower than 10% by weight, it becomes difficult to form a thick sintered body and the electrical connectivity is poor. If the copper concentration is higher than 90% by weight, it becomes difficult to apply the paste to the metal substrate or the copper conductor. The average particle diameter of copper fine particles contained in the paste (average particle diameter of primary particles) is 10 nm to 300 nm. In this embodiment, the organic dispersion medium is made of polyol, but is not limited thereto, and may contain polyol and other materials such as additives. The copper fine particles may be a copper alloy.

ここで、一次粒子の平均粒径とは、二次粒子を構成する個々の銅微粒子の一次粒子の直径を意味する。一次粒子の直径は、電子顕微鏡を用いて測定することができる。また、平均粒径とは、一次粒子の数平均粒子径を意味する。   Here, the average particle diameter of the primary particles means the diameter of the primary particles of the individual copper fine particles constituting the secondary particles. The diameter of the primary particles can be measured using an electron microscope. Moreover, an average particle diameter means the number average particle diameter of a primary particle.

また、本実施形態では、銅微粒子の酸化度を以下のように定義する。すなわち、X線回折測定(XRD)において、Cu(111)面における回折スペクトルのピーク高さをH1、CuO(111)面における回折スペクトルのピーク高さをH2としたとき、X線回折ピーク強度比(H2/[H1+H2])が、0.67以上0.91以下であり、好ましくは0.8以上0.86以下である。上記X線回折ピーク強度比が0.67未満であると良好な密着性が得られず、0.91を超えると電気的接続性に劣る。 In the present embodiment, the oxidation degree of the copper fine particles is defined as follows. That is, in X-ray diffraction measurement (XRD), when the peak height of the diffraction spectrum on the Cu (111) plane is H1, and the peak height of the diffraction spectrum on the Cu 2 O (111) plane is H2, the X-ray diffraction peak The intensity ratio (H2 / [H1 + H2]) is 0.67 or more and 0.91 or less, preferably 0.8 or more and 0.86 or less. If the X-ray diffraction peak intensity ratio is less than 0.67, good adhesion cannot be obtained, and if it exceeds 0.91, the electrical connectivity is inferior.

有機分散媒は、少なくとも1種のポリオールからなり、例えばエチレングリコール、ジエチレングリコール、グリセリン、1,2−プロパンジオール、1,3−プロパンジオール、1,2−ブタンジオール、1,3−ブタンジオール、1,4−ブタンジオール、2−ブテン−1,4−ジオール、ペンタンジオール、ヘキサンジオール、オクタンジオール、1,1,1−トリスヒドロキシメチルエタン、2−エチル−2−ヒドロキシメチル−1,3−プロパンジオール、1,2,6−ヘキサントリオール、1,2,3−ヘキサントリオール、1,2,4−ブタントリオール、トレイトール、エリスリトール、ペンタエリスリト−ル、キシリトール、ソルビトール、ペンチト−ル、テルピネオール及びヘキシトールからなる群から選択される1種又は2種以上の材料である。   The organic dispersion medium is composed of at least one polyol, for example, ethylene glycol, diethylene glycol, glycerin, 1,2-propanediol, 1,3-propanediol, 1,2-butanediol, 1,3-butanediol, , 4-butanediol, 2-butene-1,4-diol, pentanediol, hexanediol, octanediol, 1,1,1-trishydroxymethylethane, 2-ethyl-2-hydroxymethyl-1,3-propane Diol, 1,2,6-hexanetriol, 1,2,3-hexanetriol, 1,2,4-butanetriol, threitol, erythritol, pentaerythritol, xylitol, sorbitol, pentitol, terpineol and One selected from the group consisting of hexitols Is two or more kinds of material.

ポリオールは還元性を有するので、銅微粒子表面が還元され、更に加熱処理を行うことで、ポリオールが連続的に蒸発して、その液体および蒸気が存在する雰囲気で還元・焼成されると、銅微粒子の焼結が促進される。   Since polyol has reducibility, the surface of copper fine particles is reduced, and when heat treatment is performed, the polyol evaporates continuously and is reduced and calcined in an atmosphere where the liquid and vapor are present. Sintering is promoted.

(銅焼結体の形成方法)
銅焼結体3内で上記のような酸素濃度分布を設ける方法としては、例えば、所定範囲の酸化度を有する銅微粒子と、加熱・焼成時に還元性を有する溶媒にて構成されたペーストとを、複数の銅導体と基板表面に塗布した後、加熱・焼成する方法が挙げられる。加熱・焼成の方法は、複数に分けて、異なる雰囲気で行ってもよく、加熱に用いられる熱源は、例えばヒータ、光が挙げられるが、これに限定されるものではない。得られた焼結体において、銅導体近傍では銅の触媒作用による銅微粒子の還元効果が大きいが、樹脂界面近傍では銅の触媒作用が働かないため、銅微粒子の還元効果が小さい。これにより、銅導体に当接する導体当接部に低酸素濃度層が形成され、基板に当接する基板当接部には高酸素濃度層が形成される。
(Method for forming copper sintered body)
As a method of providing the oxygen concentration distribution as described above in the copper sintered body 3, for example, a copper fine particle having a predetermined degree of oxidation and a paste composed of a solvent having a reducing property during heating and firing are used. The method of heating and baking after apply | coating to the copper surface and a substrate surface is mentioned. The heating / firing method may be divided into a plurality of different atmospheres, and the heat source used for heating may be, for example, a heater or light, but is not limited thereto. In the obtained sintered body, the reduction effect of copper fine particles due to the catalytic action of copper is large in the vicinity of the copper conductor, but the catalytic effect of copper does not work in the vicinity of the resin interface, so the reduction effect of the copper fine particles is small. Thereby, a low oxygen concentration layer is formed in the conductor contact portion that contacts the copper conductor, and a high oxygen concentration layer is formed in the substrate contact portion that contacts the substrate.

上述したように、本実施形態によれば、銅焼結体3内の酸素濃度は、EDX法により計量された平均原子数濃度にて10%未満である。また、銅焼結体3は、基板1と当接する基板当接部31と、2つの銅導体2,2と当接する導体当接部32,32とを有し、基板当接部31の酸素濃度が導体当接部32の酸素濃度より高い。これにより、銅焼結体3と銅導体2との界面における電気的接続性を損なうこと無く、銅焼結体3と基板1との界面における密着性を向上させることができる。したがって、基板1の主面1a上に形成された銅導体2,2間で信頼性の高い接続を実現することができる。   As described above, according to this embodiment, the oxygen concentration in the copper sintered body 3 is less than 10% in terms of the average atomic number concentration measured by the EDX method. The copper sintered body 3 includes a substrate contact portion 31 that contacts the substrate 1 and conductor contact portions 32 and 32 that contact the two copper conductors 2 and 2, and oxygen in the substrate contact portion 31. The concentration is higher than the oxygen concentration of the conductor contact portion 32. Thereby, the adhesiveness in the interface of the copper sintered compact 3 and the board | substrate 1 can be improved, without impairing the electrical connectivity in the interface of the copper sintered compact 3 and the copper conductor 2. FIG. Therefore, a highly reliable connection can be realized between the copper conductors 2 and 2 formed on the main surface 1a of the substrate 1.

以上、本実施形態に係る接続構造体について述べたが、本発明は記述の実施形態に限定されるものではなく、本発明の技術思想に基づいて各種の変形および変更が可能である。   Although the connection structure according to the present embodiment has been described above, the present invention is not limited to the described embodiment, and various modifications and changes can be made based on the technical idea of the present invention.

例えば、図1では銅焼結体が基板上に形成される形態を示したが、これに限らず、銅焼結体が、基板に設けられた貫通孔内に形成されてもよい。   For example, FIG. 1 shows a form in which the copper sintered body is formed on the substrate. However, the present invention is not limited to this, and the copper sintered body may be formed in a through hole provided in the substrate.

具体的には、図3に示すように、接続構造体は、基板5の両主面5a,5a上に形成された2つの銅導体6,6と、銅導体6,6間を接続する銅焼結体7とを備える。銅焼結体7は、基板5の厚さ方向に貫通して設けられたスルーホール内に埋め込んで形成されており、銅導体6は、上記スルーホール内に形成された銅焼結体7の両端面に当接して配置されている。   Specifically, as shown in FIG. 3, the connection structure includes two copper conductors 6, 6 formed on both main surfaces 5 a, 5 a of the substrate 5, and copper that connects the copper conductors 6, 6. And a sintered body 7. The copper sintered body 7 is formed by being embedded in a through hole provided so as to penetrate the substrate 5 in the thickness direction, and the copper conductor 6 is formed of the copper sintered body 7 formed in the through hole. It arrange | positions in contact with both end surfaces.

銅焼結体7は、基板5の内周面5bと当接する基板当接部72と、銅導体6の内側面6aと当接する導体当接部71とを有している。基板当接部72は、基板5との当接面72aを含む高酸素濃度層で構成され、導体当接部71は、銅導体6との当接面71aを含む低酸素濃度層で構成されている。銅焼結体7内の酸素濃度は、EDX法により計量された平均原子数濃度にて10%未満であり、基板当接部72の酸素濃度は、導体当接部71の酸素濃度より高い。なお、導体当接部71は、その一部が基板5の内周面5bと当接するが、当該部分は銅導体6の内側面6aに当接して配置されているため低酸素濃度層で構成されている。   The copper sintered body 7 has a substrate contact portion 72 that contacts the inner peripheral surface 5 b of the substrate 5 and a conductor contact portion 71 that contacts the inner surface 6 a of the copper conductor 6. The substrate contact portion 72 is configured by a high oxygen concentration layer including a contact surface 72 a with the substrate 5, and the conductor contact portion 71 is configured by a low oxygen concentration layer including a contact surface 71 a with the copper conductor 6. ing. The oxygen concentration in the copper sintered body 7 is less than 10% in terms of the average atomic number concentration measured by the EDX method, and the oxygen concentration of the substrate contact portion 72 is higher than the oxygen concentration of the conductor contact portion 71. A part of the conductor abutting portion 71 abuts on the inner peripheral surface 5 b of the substrate 5, but the portion is arranged in abutting contact with the inner side surface 6 a of the copper conductor 6, so that it is configured with a low oxygen concentration layer. Has been.

基板当接部72の厚さは0μm超10μm以下であることが好ましい。基板当接部71は酸素濃度が高いため、その厚さが10μmを超えると、銅焼結体7全体の導電性を低下させてしまう。なお、基板当接部72の厚さ方向はスルーホールの径方向と同じである。また、導体当接部71の厚さも0μm超10μm以下であることが好ましい。なお、基板当接部72の厚さ方向は銅導体6の厚さ方向と同じである。   The thickness of the substrate contact portion 72 is preferably more than 0 μm and not more than 10 μm. Since the substrate contact portion 71 has a high oxygen concentration, if the thickness exceeds 10 μm, the conductivity of the entire copper sintered body 7 is lowered. The thickness direction of the substrate contact portion 72 is the same as the radial direction of the through hole. Also, the thickness of the conductor contact portion 71 is preferably more than 0 μm and 10 μm or less. The thickness direction of the substrate contact portion 72 is the same as the thickness direction of the copper conductor 6.

本変形例によれば、銅焼結体7と銅導体6との界面における電気的接続性を損なうこと無く、銅焼結体7と基板5との界面における密着性を向上することができ、基板5の両主面5a,5a上に形成された銅導体6,6間で信頼性の高い接続を実現することができる。   According to this modification, the adhesion at the interface between the copper sintered body 7 and the substrate 5 can be improved without impairing the electrical connectivity at the interface between the copper sintered body 7 and the copper conductor 6. A highly reliable connection can be realized between the copper conductors 6 and 6 formed on both the main surfaces 5a and 5a of the substrate 5.

尚、図3では単層のスルーホール内に銅焼結体を形成しているが、これに限らず、多層基板内に設けられたビア内に銅焼結体を形成してもよい。これにより、多層基板においても信頼性の高い層間接続を実現することができる。   In FIG. 3, the copper sintered body is formed in the single-layer through hole. However, the present invention is not limited to this, and the copper sintered body may be formed in a via provided in the multilayer substrate. Thereby, a highly reliable interlayer connection can be realized even in a multilayer substrate.

以下、実施例及び比較例に基づいて、本発明の好適な実施形態を具体的に説明するが、本発明はこれら実施例に限定されるものではない。   Hereinafter, preferred embodiments of the present invention will be specifically described based on Examples and Comparative Examples, but the present invention is not limited to these Examples.

[実施例1〜4]
(銅ナノペースト)
先ず、所定の酸化度となるように酸化処理が施された銅微粒子と、グリセリンとを混合して、銅濃度50wt%、グリセリン濃度50wt%の銅ナノペースト(銅粒子含有ペースト)を作製した。
[Examples 1 to 4]
(Copper nano paste)
First, copper fine particles that had been oxidized so as to have a predetermined oxidation degree were mixed with glycerin to prepare a copper nano paste (copper particle-containing paste) having a copper concentration of 50 wt% and a glycerin concentration of 50 wt%.

(回路基板)
エポキシ樹脂基板上に、100μm□、厚さ20μmの銅電極を2個、同一表面上に間隔400μmで配置した。
(Circuit board)
Two copper electrodes having a thickness of 100 μm □ and a thickness of 20 μm were arranged on the epoxy resin substrate at an interval of 400 μm on the same surface.

(接続手順)
2つの銅電極間に銅ナノペーストを厚さが100μmのメタルマスクを用いて塗布し、次に、140℃に加熱したホットプレート上に90秒間、静置して乾燥した。そして、.塗布した銅ナノペースト直近には、窒素(気体)を吹き付けるノズルを基板から約10mmの距離にまで近づけ、窒素を供給して、酸素分圧を下げた状態でレーザ光照射により銅ナノペーストを焼成した。レーザ駆動条件は、波長980nm、出力1.0W、照射時間70ms、ビームスポット径は800μmであった。
(Connection procedure)
Copper nano paste was applied between two copper electrodes using a metal mask having a thickness of 100 μm, and then left to stand on a hot plate heated to 140 ° C. for 90 seconds and dried. In the immediate vicinity of the coated copper nano paste, a nozzle for blowing nitrogen (gas) is brought close to a distance of about 10 mm from the substrate, nitrogen is supplied, and the copper nano-powder is irradiated with laser light with the oxygen partial pressure lowered. The paste was baked. The laser driving conditions were a wavelength of 980 nm, an output of 1.0 W, an irradiation time of 70 ms, and a beam spot diameter of 800 μm.

(測定方法)
(a)銅微粒子酸化度
銅ナノペーストにおいて、XRD法スペクトルにおけるCuピーク高さH1とCuOピーク高さH2の強度比(H2/(H1+H2))を測定した。
(Measuring method)
(A) Copper fine particle oxidation degree In copper nanopaste, the intensity ratio (H2 / (H1 + H2)) of Cu peak height H1 and Cu 2 O peak height H2 in the XRD method spectrum was measured.

(b)銅焼結体酸素濃度(原子数濃度)
銅ナノペーストの焼成後、銅焼結層を切断して断面サンプルを作成し、下記位置に対応する断面をSEM(電子顕微鏡)に付属するEDX分析装置にて計量し、酸素濃度を得た。このとき、電子線照射の加速電圧は20kVとした。
銅焼結体平均:基板近傍及び電極近傍を除く任意の3箇所(平均値)
基板近傍:銅焼結体と基板の界面から、厚さ方向に5μm離れた位置
電極近傍:銅焼結体と基板の界面から、厚さ方向に5μm離れた位置
また、得られた銅微粒子酸化度と銅焼結体酸素濃度との関係を図4に示す。
(B) Copper sintered body oxygen concentration (atomic number concentration)
After firing the copper nanopaste, the copper sintered layer was cut to prepare a cross-section sample, and the cross section corresponding to the following position was weighed with an EDX analyzer attached to an SEM (electron microscope) to obtain an oxygen concentration. At this time, the acceleration voltage of electron beam irradiation was 20 kV.
Copper sintered body average: Arbitrary three places (average value) excluding substrate vicinity and electrode vicinity
In the vicinity of the substrate: a position 5 μm away from the interface between the copper sintered body and the substrate in the thickness direction. In the vicinity of the electrode: a position 5 μm away from the interface between the copper sintered body and the substrate in the thickness direction. FIG. 4 shows the relationship between the degree of oxygen and the copper sintered body oxygen concentration.

(評価方法)
(a)導体間抵抗
銅ナノペーストの焼結後に電極間の電気抵抗を測定し、抵抗値が1.0Ω以下を合格とした。
(b)基板密着性および導体密着性
銅焼結層の密着性を鉛筆引掻試験にて評価した。基板上と導体上での密着性を個々に観察し、両者ともに硬度5H以下で剥離が発生しない場合を合格とした。
(Evaluation method)
(A) Resistance between conductors After sintering the copper nanopaste, the electrical resistance between the electrodes was measured, and a resistance value of 1.0Ω or less was accepted.
(B) Substrate adhesion and conductor adhesion The adhesion of the copper sintered layer was evaluated by a pencil scratch test. The adhesion between the substrate and the conductor was individually observed, and the case where both of them had a hardness of 5H or less and no peeling occurred was regarded as acceptable.

[実施例5〜8]
実施例1〜4のエポキシ樹脂基板に代えて、ホウケイ酸ガラス基板を使用したこと以外は、実施例1〜4と同様の方法にて測定、評価した。
[Examples 5 to 8]
It measured and evaluated by the method similar to Examples 1-4 except having used the borosilicate glass substrate instead of the epoxy resin board | substrate of Examples 1-4.

[実施例9,10]
実施例1のグリセリンに代えて、エチレングリコール又は1,2−プロパンジオールを溶剤として使用した以外は、実施例1と同様の方法にて測定、評価した。
[Examples 9 and 10]
It measured and evaluated by the method similar to Example 1 except having replaced with the glycerol of Example 1 and having used ethylene glycol or 1, 2- propanediol as a solvent.

[比較例1]
(銅ナノペースト)
酸化処理しない銅微粒子と、溶媒としてグリセリンとを混合し、銅濃度50wt%、グリセリン濃度50wt%の銅ナノペーストを作製した。
[Comparative Example 1]
(Copper nano paste)
Copper fine particles not subjected to oxidation treatment and glycerin as a solvent were mixed to prepare a copper nano paste having a copper concentration of 50 wt% and a glycerin concentration of 50 wt%.

(回路基板)
エポキシ樹脂基板上に、100μm□、厚さ20μmの銅電極を2個、同一表面上に間隔400μmで配置した。
(Circuit board)
Two copper electrodes having a thickness of 100 μm □ and a thickness of 20 μm were arranged on the epoxy resin substrate at an interval of 400 μm on the same surface.

(接続手順)
(a)銅微粒子酸化度
銅ナノペーストにおいて、XRD法スペクトルにおけるCuピーク高さH1とCuOピーク高さH2の強度比(H2/(H1+H2))を測定した。
(Connection procedure)
(A) Copper fine particle oxidation degree In copper nanopaste, the intensity ratio (H2 / (H1 + H2)) of Cu peak height H1 and Cu 2 O peak height H2 in the XRD method spectrum was measured.

(b)焼結層酸素濃度(原子数濃度)
銅ナノペーストの焼成後、銅焼結層を切断し、下記位置に対応する断面をEDX法にて計量し、酸素濃度を得た。
焼結体平均:基板近傍及び電極近傍を除く任意の3箇所(平均値)
基板近傍:銅焼結体と基板の界面から、厚さ方向に5μm離れた位置
電極近傍:銅焼結体と基板の界面から、厚さ方向に5μm離れた位置
(B) Sintered layer oxygen concentration (atomic number concentration)
After firing the copper nanopaste, the sintered copper layer was cut and the cross section corresponding to the following position was weighed by the EDX method to obtain an oxygen concentration.
Sintered body average: Any three locations (average value) excluding substrate vicinity and electrode vicinity
Near the substrate: a position 5 μm away from the interface between the copper sintered body and the substrate In the vicinity of the electrode: a position 5 μm away from the interface between the copper sintered body and the substrate in the thickness direction

[比較例2〜4]
酸化処理が施された銅微粒子とグリセリンとを混合し、銅濃度50wt%、グリセリン濃度50wt%の銅ナノペーストを作製したこと以外は、比較例1と同様にして測定、評価した。
[Comparative Examples 2 to 4]
Measurement and evaluation were performed in the same manner as Comparative Example 1 except that copper fine particles subjected to oxidation treatment and glycerin were mixed to prepare a copper nanopaste having a copper concentration of 50 wt% and a glycerin concentration of 50 wt%.

[比較例5]
酸化処理が施された銅微粒子とNMP(N−メチル−2−ピロリドン)とを混合し、銅濃度50wt%、NMP濃度50wt%の銅ナノペーストを作製したこと以外は、比較例1と同様にして測定、評価した。
[Comparative Example 5]
The same procedure as in Comparative Example 1 was conducted except that copper fine particles subjected to oxidation treatment and NMP (N-methyl-2-pyrrolidone) were mixed to produce a copper nanopaste having a copper concentration of 50 wt% and an NMP concentration of 50 wt%. Measured and evaluated.

上記の方法にて測定・評価した結果を表1,2に示す。

Figure 0006301632

Figure 0006301632
Tables 1 and 2 show the results of measurement and evaluation by the above method.
Figure 0006301632

Figure 0006301632

表1,2に示すように、実施例1〜8では、樹脂基板・ガラス基板ともに、導体間の抵抗値が1.0Ω以下となり、良好な電気的接続性を示すことが分かった。また、鉛筆引掻試験では、基板上および導体上の双方で、硬度が5H以下で剥離が発生せず、優れた基板密着性および導体密着性を示すことが分かった。   As shown in Tables 1 and 2, in Examples 1 to 8, it was found that both the resin substrate and the glass substrate had a resistance value between the conductors of 1.0 Ω or less, indicating good electrical connectivity. Further, in the pencil scratch test, it was found that the hardness was 5H or less on both the substrate and the conductor, and no peeling occurred and excellent substrate adhesion and conductor adhesion were exhibited.

一方、比較例1では、導体間の抵抗値が10Ωとなり、電気的接続性に劣ることが分かった。また、鉛筆引掻試験では、基板上で硬度10Bにて剥離が発生し、基板密着性に劣ることが分かった。比較例2では、導体間の抵抗値が7Ωとなり、電気的接続性に劣ることが分かった。また、硬度2B以下では剥離が発生しなかったが、基板密着性に劣ることが分かった。比較例3では、導体間の抵抗値が5Ωとなり、電気的接続性に劣ることが分かった。また、基板上で硬度HB以下では剥離が発生しなかったが、基板密着性に劣ることが分かった。比較例4では、導体間の抵抗値が4Ωとなり、電気的接続性に劣ることが分かった。   On the other hand, in Comparative Example 1, the resistance value between the conductors was 10Ω, and it was found that the electrical connectivity was inferior. Further, in the pencil scratch test, it was found that peeling occurred at a hardness of 10B on the substrate and the substrate adhesion was poor. In Comparative Example 2, it was found that the resistance value between the conductors was 7Ω, and the electrical connectivity was inferior. Moreover, although peeling did not generate | occur | produce with hardness 2B or less, it turned out that it is inferior to board | substrate adhesiveness. In Comparative Example 3, the resistance value between the conductors was 5Ω, and it was found that the electrical connectivity was inferior. Moreover, although peeling did not generate | occur | produce below hardness HB on a board | substrate, it turned out that it is inferior to board | substrate adhesiveness. In Comparative Example 4, it was found that the resistance value between the conductors was 4Ω, and the electrical connectivity was inferior.

比較例5は、ポリオールを含まない溶媒を用いた場合だが、導体間が非導通となり、電気的接続性を有さないことが分かった。また、基板上および導体上の双方で硬度10Bにて剥離が発生し、基板密着性および導体密着性が無いことが分かった。   Although the comparative example 5 was a case where the solvent which does not contain a polyol was used, it turned out that between conductors became non-conducting and it did not have electrical connectivity. Moreover, peeling occurred at a hardness of 10B on both the substrate and the conductor, and it was found that there was no substrate adhesion and no conductor adhesion.

1 基板
1a 主面
2 銅導体
2a 上面
2b 側面
3 銅焼結体
5 基板
5a 主面
5b 内周面
6 銅導体
6a 内側面
7 銅焼結体
31 基板当接部
32 導体当接部
31a 当接面
32a 当接面
71 導体当接部
72 基板当接部
71a 当接面
72a 当接面
DESCRIPTION OF SYMBOLS 1 Board | substrate 1a Main surface 2 Copper conductor 2a Upper surface 2b Side surface 3 Copper sintered body 5 Board | substrate 5a Main surface 5b Inner peripheral surface 6 Copper conductor 6a Inner side surface 7 Copper sintered body 31 Board | substrate contact part 32 Conductor contact part 31a contact Surface 32a Contact surface 71 Conductor contact portion 72 Substrate contact portion 71a Contact surface 72a Contact surface

Claims (7)

基板上で回路の少なくとも一部を形成する複数の銅導体と、
前記複数の導体間を接続する銅焼結体とを備え、
前記銅焼結体は、前記基板と当接する基板当接部と、前記銅導体と当接する導体当接部とを有し、
前記銅焼結体内の酸素濃度は、EDX法により計量された平均原子数濃度で10%未満であり、
前記基板当接部の酸素濃度は、前記導体当接部の酸素濃度より高いことを特徴とする接続構造体。
A plurality of copper conductors forming at least part of the circuit on the substrate;
A copper sintered body connecting the plurality of conductors,
The copper sintered body has a substrate contact portion that contacts the substrate, and a conductor contact portion that contacts the copper conductor,
The oxygen concentration in the copper sintered body is less than 10% in terms of the average atomic number concentration measured by the EDX method,
The connection structure according to claim 1, wherein an oxygen concentration of the substrate contact portion is higher than an oxygen concentration of the conductor contact portion.
前記基板当接部の酸素濃度は、EDX法により計量された原子数濃度で6%を超え10%以下であり、
前記導体当接部の酸素濃度は、EDX法により計量された原子数濃度で1%以上6%以下であることを特徴とする、請求項1記載の接続構造体。
The oxygen concentration of the substrate contact portion is more than 6% and not more than 10% in terms of atomic concentration measured by the EDX method.
2. The connection structure according to claim 1, wherein the oxygen concentration of the conductor contact portion is 1% or more and 6% or less in terms of the atomic number concentration measured by the EDX method.
前記複数の銅導体及び前記銅焼結体が前記基板上に形成され、
前記銅焼結体の一部が、前記複数の銅導体の少なくとも一部と前記基板の一部とを覆うように形成され、
前記基板当接部が前記基板上に配置され、前記導体当接部が前記銅導体上に配置されることを特徴とする、請求項1又は2記載の接続構造体。
The plurality of copper conductors and the copper sintered body are formed on the substrate,
A part of the copper sintered body is formed so as to cover at least a part of the plurality of copper conductors and a part of the substrate,
The connection structure according to claim 1, wherein the substrate contact portion is disposed on the substrate, and the conductor contact portion is disposed on the copper conductor.
前記銅焼結体が、前記基板の厚さ方向に貫通して設けられた貫通孔内を埋めるように形成され、
前記銅導体が、前記貫通孔内に形成された前記銅焼結体の両端面を覆って配置され、
前記基板当接部が、前記貫通孔の内周面に当接して配置され、前記導体当接部が、前記銅導体に当接して配置されることを特徴とする、請求項1又は2記載の接続構造体。
The copper sintered body is formed so as to fill in a through hole provided penetrating in the thickness direction of the substrate,
The copper conductor is disposed so as to cover both end faces of the copper sintered body formed in the through hole,
The said board | substrate contact part is arrange | positioned in contact with the internal peripheral surface of the said through-hole, and the said conductor contact part is arrange | positioned in contact with the said copper conductor, The said 1 or 2 characterized by the above-mentioned. Connection structure.
前記基板当接部の厚さが、10μm以下であることを特徴とする請求項1乃至4のいずれか1項に記載の接続構造体。   The connection structure according to claim 1, wherein a thickness of the substrate contact portion is 10 μm or less. 基板上で回路の少なくとも一部を形成する、複数の銅導体間を接続する銅焼結体形成用の銅粒子含有ペーストであって、
X線回折測定においてCu回折スペクトルのピーク高さをH1、CuO回折スペクトルのピーク高さをH2としたとき、X線回折ピーク強度比(H2/[H1+H2])が、0.以上0.86以下である、表面層が酸化銅からなる銅粒子と、
溶媒として分子内にヒドロキシル基を2個以上有するポリオールと、
を含有することを特徴とする銅粒子含有ペースト。
A copper particle-containing paste for forming a copper sintered body that connects between a plurality of copper conductors, forming at least part of a circuit on a substrate,
In the X-ray diffraction measurement, when the peak height of the Cu diffraction spectrum is H1, and the peak height of the Cu 2 O diffraction spectrum is H2, the X-ray diffraction peak intensity ratio (H2 / [H1 + H2]) is 0. 8 or more 86 or less, copper particles whose surface layer is made of copper oxide,
A polyol having two or more hydroxyl groups in the molecule as a solvent;
The copper particle containing paste characterized by containing.
前記ポリオールが、エチレングリコール、ジエチレングリコール、グリセリン、1,2−プロパンジオール、1,3−プロパンジオール、1,2−ブタンジオール、1,3−ブタンジオール、1,4−ブタンジオール、2−ブテン−1,4−ジオール、ペンタンジオール、ヘキサンジオール、オクタンジオール、1,1,1−トリスヒドロキシメチルエタン、2−エチル−2−ヒドロキシメチル−1,3−プロパンジオール、1,2,6−ヘキサントリオール、1,2,3−ヘキサントリオール、1,2,4−ブタントリオール、トレイトール、エリスリトール、ペンタエリスリト−ル、キシリトール、ソルビトール、ペンチト−ル、テルピネオール及びヘキシトールからなる群から選択される1種又は2種以上であることを特徴とする、請求項6記載の銅粒子含有ペースト。   The polyol is ethylene glycol, diethylene glycol, glycerin, 1,2-propanediol, 1,3-propanediol, 1,2-butanediol, 1,3-butanediol, 1,4-butanediol, 2-butene- 1,4-diol, pentanediol, hexanediol, octanediol, 1,1,1-trishydroxymethylethane, 2-ethyl-2-hydroxymethyl-1,3-propanediol, 1,2,6-hexanetriol , 1,2,3-hexanetriol, 1,2,4-butanetriol, one selected from the group consisting of threitol, erythritol, pentaerythritol, xylitol, sorbitol, pentitol, terpineol and hexitol Or two or more types To claim 6 of a copper particle-containing paste.
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