JP6329596B2 - Semiconductor device - Google Patents

Description

  Embodiments described herein relate generally to a semiconductor device.

An optical coupling device (including a photocoupler and a photorelay) can convert an input electric signal into an optical signal by using a light emitting element, and can output the electric signal after receiving the light by the light receiving element. For this reason, the optical coupling device can transmit an electrical signal in a state where the input and output are insulated.

In industrial equipment, office equipment, and home appliances, different power supply systems such as a DC voltage system, an AC power supply system, a telephone line system, and a control system are arranged in one apparatus. However, if different power supply systems and circuit systems are directly coupled, malfunction may occur.

If an optical coupling device is used, different power sources are insulated from each other, so that malfunction can be suppressed.

For example, in inverters and air conditioners, a large number of photocouplers including those for AC loads are used. In addition, when used for signal switching for tester applications, a very large number of photocouplers are mounted. In such a case, downsizing is strongly required because the mounting area on the substrate needs to be reduced. Even if it is small, it is required to maintain high moisture resistance and reliability.

JP-A-9-36413

  Provided is a semiconductor device that can be easily downsized while maintaining moisture resistance and reliability.

The semiconductor device according to the embodiment includes a mounting member including an insulating substrate having a first surface and a second surface opposite to the first surface, a first conductive region, and the first conductive region. A first terminal provided on the first surface, a second conductive region, a second terminal provided on the first surface, a third conductive region, the first terminal and the second conductive region A die pad portion provided apart from the first terminal and the second terminal, a light receiving element provided on the third conductive region, and a light receiving element on the light receiving element. The provided light emitting element, MOSFET, the light receiving element, the light emitting element, the MOSFET, the first surface of the insulating substrate, the first terminal, and the second terminal. comprising a sealing resin layer covering the said third conductive region includes a first die pad portion adjacent to said second terminal, said first And a second die pad portion adjacent to the terminal, said and said second die pad portion first die pad portion spaced apart from one another, the light receiving element is provided on the second die pad portion, the MOSFET is the second A conductive layer that is provided on one die pad portion , the second conductive region is on the second surface, and electrically connects the second conductive region and the first die pad portion of the third conductive region; , Provided in a through hole that communicates from the first surface to the second surface.

FIG. 1A is a schematic plan view of a mounting member according to the first embodiment, and FIG. 1B is a schematic cross-sectional view taken along the line AA. FIG. 2A is a schematic plan view of the optical coupling device using the mounting member according to the first embodiment, and FIG. 2B is a schematic cross-sectional view along the line AA. FIG. 3A is a schematic plan view of the mounting member according to the second embodiment, FIG. 3B is a schematic cross-sectional view along the line AA, and FIG. 3C is along the line AA. It is a schematic cross section of a modified example. FIG. 4A is a schematic plan view of an optical coupling device using a mounting member according to the second embodiment, and FIG. 4B is a schematic cross-sectional view taken along the line AA. 5A is a schematic perspective view of an optical coupling device that uses a mounting member according to a modification of the first embodiment, FIG. 5B is a schematic cross-sectional view taken along the line AA, and FIG. ) Is a schematic perspective view before sealing. FIGS. 6A to 6H are schematic views illustrating a manufacturing process of the facing optical coupling device according to the comparative example. FIG. 7A is a schematic plan view of the insulating substrate before cutting, and FIG. 7B is a schematic cross-sectional view taken along the line BB. It is a block diagram of the optical coupling device concerning 1st Embodiment. It is a model perspective view of the optical coupling device using the mounting member concerning the modification of 2nd Embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1A is a schematic plan view of a mounting member according to the first embodiment, and FIG. 1B is a schematic cross-sectional view taken along the line AA.
The mounting member includes the insulating substrate 10, the first die pad portion 40, the first terminal 20, and the second terminal 30.

The insulating substrate 10 includes a rectangular first surface 10a, a second surface 10b opposite to the first surface 10a, a first side surface 10c, and a second surface facing the first side surface 10c. Side surface 10d and the third
Side surface 10e and a fourth side surface 10f opposite to the third side surface 10e, and the first surface 1
A through hole 10g leading from 0a to the second surface 10b is provided. The insulating substrate 10 is made of glass fiber or the like and can have a thickness of 0.1 to 0.5 mm.

A cutout portion 10 h can be provided on the first side surface 10 c and the second side surface 10 d of the insulating substrate 10. A conductive portion can be provided on the inner wall of the notch 10h.

The first terminal 20 has, for example, two conductive regions 21 and 22. Each of the conductive regions 21 and 22 is connected to the conductive region provided on the first surface 10a and the conductive region provided on the second surface 10b via the conductive region on the first side surface 10c. Is done. First side face 10
When the conductive region c and the wiring part such as a circuit board are bonded with a solder fillet or the like, it is easy to confirm the joining state of the solder material. As shown in FIG. 1, the notch 10 is formed on the first side surface 10c.
h may be provided, and a conductive region may be provided on the surface of the notch 10h.

Similarly, the second terminal 30 has, for example, two conductive regions 31 and 32. Each of the conductive regions 31 and 32 is connected to the first surface 1 via a conductive region provided in the notch 10h.
The conductive region provided on 0a and the conductive region provided on the second surface 10b are connected.

The first pad portion 40 is provided on the first surface 10a. The second terminal 30 has a through hole 10g.
The first die pad portion 40 is connected by a conductive paste layer, a plating layer, a side wall conductive region, or the like filled inside. The second terminal 30 is insulated from the first terminal 20.

The conductive regions of the first die pad portion 40, the first terminal 20, and the second terminal 30 are Cu foil provided on the first surface 10a of the insulating substrate 10, and Ni stacked thereon. , A
It can consist of a plating layer such as u. Further, as viewed from above, the first die pad portion 40, the first terminal 20, and the second terminal 30 are the first surface 10 of the insulating substrate 10.
They are separated from each other on a.

FIG. 2A is a schematic plan view of an optical coupling device using the mounting member according to the first embodiment.
(B) is a schematic cross section along the AA line.
The optical coupling device includes a mounting member 5, a light receiving element 50, a light emitting element 60, and a sealing resin layer 9 in FIG.
0. The light receiving element 50 is bonded to the first die pad portion 40 and has a light receiving surface on the upper surface. The light emitting element 60 irradiates light from the back surface toward the light receiving surface of the light receiving element 50. Adhesive layer 5
2 has translucency and insulation, and adheres the light emitting element 60 to the upper surface of the light receiving element 50. Adhesive layer 5
2 is made of an insulating paste containing polyimide resin, epoxy resin, silicone resin, or the like, and the sealing resin layer 90 can be made of epoxy resin, silicone resin, or the like.

The anode electrode and the cathode electrode of the light emitting element 60 are connected to the first terminals 21 and 22 by bonding wires or the like, respectively. One electrode provided on the first surface of the light receiving element 50 is connected to the second terminal 32 by a bonding wire or the like. The other electrode (for example, provided on the back surface) of the light receiving element 50 is bonded to the first die pad portion 40 and connected to the second terminal 31 through the through hole 10g.

The sealing resin layer 90 includes the light receiving element 50, the light emitting element 60, and the first surface 10 a of the insulating substrate 10.
And the light emitting element 60, the light receiving element 50, the bonding wire and the like are protected. When viewed from above, the first die pad portion 40, the first terminal 20, and the second terminal 30 are provided on the insulating substrate 1.
The first surfaces 10a of 0 are separated from each other. For this reason, the sealing resin layer 90 is in close contact with the first surface 10a of the insulating substrate 10 and can maintain high moisture resistance and reliability.

FIG. 3A is a schematic plan view of the mounting member according to the second embodiment, FIG. 3B is a schematic cross-sectional view along the line AA, and FIG. 3C is along the line AA. It is a schematic cross section of a modified example.
The mounting member 5 includes an insulating substrate 10, a first terminal 20, and a second terminal 30.

The insulating substrate 10 includes a rectangular first surface 10a, a second surface 10b opposite to the first surface 10a, a first side surface 10c, and a second surface facing the first side surface 10c. Side surface 10d and the third
Side surface 10e and a fourth side surface 10f opposite to the third side surface 10e.

A cutout portion 10 h can be provided on the first side surface 10 c and the second side surface 10 d of the insulating substrate 10. A conductive region can be provided on the side surface of the notch 10h.

The first terminal 20 has two conductive regions 21 and 22. Each conductive region 21, 2
2, a conductive region provided on the first surface 10 a and a conductive region provided on the second surface 10 b are connected via a conductive region provided in the notch 10 h.

The second terminal 30 has two conductive regions 31 and 32. Each conductive region 31, 3
2, a conductive region provided on the first surface 10 a and a conductive region provided on the second surface 10 b are connected via a conductive region provided in the notch 10 h. A second terminal 30;
The first terminal 20 is insulated.

In FIG. 3B, the first terminal 20 and the second terminal 30 include a first conductive area AA having a surface protective layer containing Au or Ag, and a surface protective layer of the first conductive area AA. Is different
And a second conductive region BB whose surface is Cu or the like. Also, as viewed from above, the first terminal 2
0 and the second terminal 30 are separated from each other on the first surface 10 a of the insulating substrate 10.

Cu serves as a main current path. In addition, the first conductive area AA includes Cu and A provided thereon.
u and Ag, and is provided to reliably perform bonding and wire bonding of semiconductor elements.

However, in the first conductive area AA, Au and Ag have insufficient adhesion to the sealing resin layer 90, and moisture resistance and reliability are not sufficient. For this reason, after forming Cu, the second
The region to be the conductive region BB is covered with a mask or the like, and Au or Ag is not formed. In this way
Adhesion between the sealing resin layer 90 and the second conductive region BB whose surface layer is Cu of the second terminal 31 can be enhanced.

Alternatively, as shown in FIG. 3C, the surface protective layer 2 containing Au or Ag on Cu.
The first conductive area AA is provided with a mask on the first and second terminals 20 and 30 provided with 3, 33 to form the second conductive area BB. The second conductive region BB includes Cu, Ni, Pd or the like having good adhesion to the sealing resin layer 90 on the surface, or at least several nm.
It is assumed that the surface includes an oxide film or the like. It is desirable to increase the thickness of the oxide on the surface of the second conductive region BB compared to the surface of the first conductive region AA.

FIG. 4A is a schematic plan view of an optical coupling device using the mounting member according to the second embodiment, and FIG.
(B) is a schematic cross section along the AA line.
The optical coupling device is bonded to the mounting member 5 in FIG. 3 and the second terminal 31 and has a light receiving element 50 having a light receiving surface on the upper surface, a light emitting element 60 that irradiates light on the light receiving surface, and translucency and insulation. The adhesive layer 52 which adheres the light emitting element 60 to the upper surface of the light receiving element 50 and the sealing resin layer 90 are provided.

In addition, the anode electrode and the cathode electrode of the light emitting element 60 are respectively connected to the first conductive region AA of the first terminals 21 and 22 by a bonding wire or the like. One electrode provided on the first surface 10a of the light receiving element 50 is connected to the second terminal 32 by a bonding wire or the like. The other electrode of the light receiving element 50 is bonded to the second terminal 31.

The sealing resin layer 90 includes the light receiving element 50, the light emitting element 60, and the first surface 10 a of the insulating substrate 10.
The first conductive areas AA and the second conductive areas BB on the second terminals 31 are covered to protect the inside. For this reason, the sealing resin layer 90 adheres to the mounting member 5 and can maintain high moisture resistance and reliability.

FIG. 5A is a schematic perspective view of an optical semiconductor device using a mounting member according to a modification of the first embodiment, FIG. 5B is a schematic cross-sectional view along the line AA, and FIG. ) Is a schematic perspective view before sealing.
The mounting member 5 further includes a second die pad portion 41 provided in the region of the first surface 10 a between the first terminal 20 and the first die pad portion 40.

The mounting member 5 according to the modification of the first embodiment has a first die pad portion 40 as viewed from above.
The second die pad portion 41, the first terminal 20, and the second terminal 30 are connected to the insulating substrate 10.
Are spaced apart from each other on the first surface 10a.

The optical coupling device includes a mounting member 5, a MOSFET 70 bonded to the first die pad portion 40, a light receiving element 50 bonded to the second die pad portion 41 and having a light receiving surface on the upper surface, and light emission for irradiating the light receiving surface with light. The light-emitting element 60 is provided on the upper surface of the light-receiving element 50 with light-transmitting and insulating properties.
And an encapsulating resin layer 90. Further, the light receiving element 50 having the light receiving surface on the upper surface and the light emitting element 60 for irradiating the light receiving surface with light may be covered with a transparent silicone resin 89 (represented by a broken line).

The number of the MOSFETs 70 may be one, but in this figure, it is assumed to include two elements that are connected to the source and common. When the chip back surface of each MOSFET 70 is the drain, the second terminals 31 and 32 become the drains of the respective MOSFETs.

The sealing resin layer 90 includes the light receiving element 50, the light emitting element 60, and the first surface 10 a of the insulating substrate 10.
Then, the conductive regions 21, 22, 31, 32 and the MOSFET 70 are covered to protect the inside.
When the light receiving element 50 and the light emitting element 60 are covered with a transparent silicone resin 89 or the like, the mounting member 5 has a distance DD between the outer edge of the mount bed of the MOSFET 70 and the outer edge of the sealing resin layer 90.
Is 40 μm, and the distance EE between the outer edge of the mounting bed of the light receiving element 50 and the outer edge of the sealing resin layer 90 is 70 μm, the sealing resin layer 90 is in close contact with the first surface 10 a of the insulating substrate 10. Can keep high moisture resistance and reliability.

(Table 1) represents the growth leak test failure rate with respect to the distance between the outer edge of the sealing resin layer and the outer edge of the mount bed.

As shown in Table 1, the distance EE between the outer edge of the mount bed of the light receiving element 50 and the outer edge of the sealing resin layer 90 is longer than the distance DD between the outer edge of the mount bed of the MOSFET 70 and the outer edge of the sealing resin layer 90. There is a need. Furthermore, when the distance DD is the minimum value, the distance EE is the distance DD.
It is preferable that the length is at least 15 μm or longer. Alternatively, when the distance EE is the minimum value, the distance DD is preferably longer than (distance EE-15 μm). As a result, MOSFE
T70, the light emitting element 60, the light receiving element 50, and the bonding wires connecting them are:
High long-term reliability can be maintained even in a high temperature and high humidity environment.

The optical coupling device includes a MOSFET 70 bonded to the mounting member 5 and the first die pad portion 40.
A light receiving element 50 bonded to the second die pad portion 41 and having a light receiving surface on its upper surface, a light emitting element 60 for irradiating the light receiving surface with light, and first and second terminals 20 and 30. Designed by area. As an example, the area of the mounting member 5 can be about 3.6 mm 2. At that time, the MOSFET 70 can be 0.28 mm 2, the light receiving element 50 can be 0.58 mm 2, the area ratio of each element to the mounting member 5 is about 32%, and the first die pad portion 40 and the second die pad portion 41 The area ratio with respect to the mounting member 5 can be set to 61%, and the size can be significantly reduced as compared with the conventional case, and the first surface 10a and the sealing resin layer 90 are in close contact with 39
%, And high long-term reliability can be maintained even in high temperature and high humidity environments. When the adhesion area is less than this, long-term reliability cannot be maintained due to peeling from the outer edge of the sealing resin layer 90 or the like.

In the schematic cross-sectional view along the AA line shown in FIG. 5B, the mounting member 5, the MOSFET 70 bonded to the first die pad portion 40, and the second die pad portion 41 are bonded, and the light receiving surface is the upper surface. The vertical height of the light receiving element 50, the light emitting element 60 that irradiates the light receiving surface, and the bonding wires BW1 and BW2 that couple the electrodes of the light emitting element 50 and the first terminal 20 is about 0.94 mm. Even if the tolerance is 0.11 mm at the maximum, 1
. The mounting member 5 and the sealing resin layer 90 can be kept to a minimum length so that the upper surfaces of the bonding wires BW1 and BW2 do not protrude from the sealing resin layer 90 and can maintain long-term reliability.
A total thickness of 1, 3 mm can be designed. Furthermore, the distance FF between the bonding wires BW1 and BW2 including the transparent silicone resin 89 and the outer edge of the sealing resin layer 90 was set to 0.11 mm, and the same reliability was obtained up to 1,16 mm. This distance FF can be set to 70 μm, similar to the distance EE between the outer edge of the sealing resin layer 90 and the light receiving element 50 as seen from at least the top surface. It is also possible to make the thickness about 30 μm using a high-precision mold. Also, FIG.
As shown in (c), inner wall conductive regions (31 m, 32 m, etc.) formed by plating or the like are provided on the inner wall surface of the cutout portion provided on the side surface of the insulating substrate 10, and the conductive regions 21, 22 are provided.
, 31 and 32 respectively.

FIGS. 6A to 6H are schematic views illustrating a manufacturing process of the facing optical coupling device according to the comparative example. 6A is a partial schematic side view of the light emitting side lead frame, FIG. 6B is a partial schematic plan view thereof, FIG. 6C is a partial schematic side view of the light receiving side lead frame, and FIG. ) Is a partial schematic plan view thereof, FIG. 6E is a schematic side view in which two lead frames are opposed to each other, and FIG.
f) is a schematic cross-sectional view of a structure in which the chip is covered with a light-transmitting resin, and FIG.
FIG. 6H is a schematic cross-sectional view of a structure in which a lead frame is molded with a light blocking resin, and FIG. 6H is a schematic cross-sectional view after lead cutting.

As shown in FIGS. 6A and 6B, the light emitting element 111 is formed on the light emitting side lead frame 100.
Glued to. FIG. 6A is a partial schematic cross-sectional view taken along the line CC. FIG.
), (D), the light receiving element 121 and the two MOSFETs 131 and 132
Is bonded to the light receiving side lead frame 200. In addition, FIG.6 (c) is a partial schematic cross section along the DD line.

The light emitting side lead frame 110 and the light receiving side lead frame 200 are opposed to each other as shown in FIG. Light emitting element 110, light receiving element 120, and two MOSFETs
131 and 132 are covered with a light-transmitting resin 160. The shape of the light transmissive resin 160 is determined by the surface tension or the like and becomes a light propagation path.

Furthermore, as shown in FIG. 6G, the light-transmitting resin 160 and the light-emitting side lead frame 10.
0 and the light receiving side lead frame 200 are sealed with a light blocking resin 170. further,
As shown in FIG. 6H, the light-emitting side lead frame 100 and the light-receiving side lead frame 20
0 is an optical coupling device by cutting and forming.

In the comparative example, the thickness between the lead frame and the end face of the light blocking resin 170, or the thickness between the light transmitting resin 160 and the end face of the light blocking resin 170 is, for example, 0.5 mm or more. It is necessary to suppress the occurrence of cracks in the light blocking resin 170 due to thermal stress. For this reason,
It is difficult to reduce the size and thickness of the optical coupling device. Further, in the structure of the comparative example, compared with the substrate structure using the mounting member according to the first embodiment, the number of parts is small, and it is difficult to increase the mass productivity.

FIG. 7A is a schematic plan view before cutting of a modified example of the mounting member of the first embodiment, and FIG. 7B is a schematic cross-sectional view along the line BB.
In the modified example of the insulating substrate 10, a through hole 10 g for connecting the first die pad part 40 and the second terminal 30, and a through hole for the notch part 10 h of the first and second terminals 20 and 30. And a separation groove 94. After the light emitting element and the light receiving element are bonded and wire bonded, the sealing resin layer 90 is provided. In this case, the sealing resin layer 90 is separated from the separation groove 94.
The inside is filled and further cured.

In FIG. 7B, it is assumed that the MOSFET 70 is bonded to the first die pad portion 40. The third side surface 10e and the fourth side surface 10f are covered with the sealing resin layer 90 filled in the separation groove 94 after the separation step. For this reason, since the adhesiveness with the insulating substrate 10 can be further improved, the distance GG between the outer edge of the MOSFET 70 and the outer edge of the sealing resin layer 90 is
This can be made shorter than when the separation groove 94 is not provided. The separation groove 94 can be an elongated through hole, an elongated recess, or the like.

FIG. 8 is a block diagram of the optical coupling device shown in FIG.
The light receiving element 50 can further include a control circuit 50a. The control circuit 50a is connected to the first electrode and the second electrode of the photodiode array 50b, respectively. With such a configuration, a voltage can be supplied to each gate of the MOSFET 70 that is connected to the source and common.

MOSFET 70 can be, for example, an n-channel enhancement type.
MOSFET 70 is connected to the second electrode of photodiode array 50b. Each gate is connected to the first electrode, and each drain D serves as an output terminal.

When the optical signal is on, both MOSFETs 70 are on and the second terminal (output terminal) 3
It is connected to an external circuit including a power source and a load via 0. On the other hand, when the optical signal is off, the MO
Both SFETs 70 are turned off and are disconnected from the external circuit. When the source common connection is used, linear output is possible, and switching between analog signals and AC signals becomes easy.

FIG. 9 is a schematic perspective view of an optical coupling device using a mounting member according to a modification of the second embodiment.
The mounting member 5 further includes a second die pad portion 41 provided in the region of the first surface 10 a between the first terminal 20 and the second terminal 30.

When viewed from above, the second die pad portion 41, the first terminal 20, and the second terminal 30 are:
The insulating substrate 10 is separated from each other on the first surface 10a. The MOSFET 70 is connected to the second terminal 3
The first conductive areas AA are selectively bonded to the two conductive areas 31 and 32 of 0, respectively.

The optical coupling device includes a mounting member 5, a MOSFET 70 bonded to the second terminals 31 and 32, a light receiving element 50 bonded to the die pad portion 42 and having a light receiving surface on the upper surface, and light emission for irradiating the light receiving surface with light. The device 60 includes an adhesive layer 52 that has light-transmitting properties and insulating properties and adheres the light-emitting device 60 to the upper surface of the light-receiving device 50, and a sealing resin layer 90.

The number of the MOSFETs 70 may be one, but in this figure, it is assumed to include two elements that are connected to the source and common. When the chip back surface of each MOSFET 70 is the drain, the second terminals 31 and 32 become the drains of the respective MOSFETs.

The sealing resin layer 90 includes the light receiving element 50, the light emitting element 60, and the first surface 10 a of the insulating substrate 10.
And the second conductive region BB of the second terminal 30 is covered to protect the inside. The MOSFET 70, the light emitting element 60, and the light receiving element 50 can maintain high long-term reliability even in a high temperature and high humidity environment.

The optical coupling device shown in FIGS. 5 and 9 can be easily reduced in size and thickness, and has high mass productivity. And the adhesiveness of the sealing resin layer 90 and the mounting member 5 is improved, and moisture resistance can be improved. For this reason, high reliability can be maintained even in a high temperature / high humidity environment.

These optical coupling devices can be widely used in industrial equipment, office equipment, home appliances, and the like. For this reason, it is possible to maintain normal and stable operation in a device incorporating different power sources.

Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

10 Insulating substrate, 10a 1st surface, 10b 2nd surface, 10c 1st side surface, 10d
Second side, 10e Third side, 10f Fourth side, 10g Through hole, 10h Notch, 20, 21, 22 First terminal, 30, 31, 32 Second terminal, 40 First die pad Part, 41 second die pad part, 50 light receiving element, 52 adhesive layer, 60 light emitting element, 70 MOSFET, 90 sealing resin layer, AA first conductive region, BB second conductive region

Claims (4)

A mounting member including an insulating substrate having a first surface and a second surface opposite to the first surface;
A first terminal including the first conductive region and provided on the first surface;
A second terminal including a second conductive region and provided on the first surface;
A die pad portion having a third conductive region and provided between the first terminal and the second terminal so as to be separated from the first terminal and the second terminal;
A light receiving element provided on the third conductive region;
A light emitting element provided on the light receiving element;
MOSFET,
A sealing resin layer covering the light receiving element, the light emitting element, the MOSFET, the first surface of the insulating substrate, the first terminal, and the second terminal;
Have
The third conductive region has a first die pad portion adjacent to the second terminal and a second die pad portion adjacent to the first terminal ,
The first die pad part and the second die pad part are separated from each other ,
The light receiving element is provided on the second die pad portion;
The MOSFET is provided on the first die pad part ,
The second conductive region is on the second surface, and a conductive layer electrically connecting the second conductive region and the first die pad portion of the third conductive region is formed from the first surface. A semiconductor device provided in a through hole that communicates with the second surface. The insulating substrate has a first side surface and a second side surface opposite to the first side surface,
The first terminal is provided on the first side surface, and the second terminal is provided on the second side surface;
The semiconductor device according to claim 1, wherein the first side surface and the second side surface are provided with notches. The semiconductor device according to claim 2, wherein the first terminal and the second terminal are provided in the notch. The first distance between the second die pad portion and the outer edge of the sealing resin layer is longer than the second distance between the first die pad portion and the outer edge of the sealing resin layer. A semiconductor device according to 1.

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