JP6355012B2 - Film sensor, film sensor manufacturing method, display device with touch position detection function, and laminate for producing film sensor - Google Patents

Description

  The present invention relates to a film sensor for constituting a touch panel device and a method for manufacturing the film sensor. The present invention also relates to a display device with a touch position detection function obtained by combining the film sensor and a display device. The present invention also relates to a laminate for producing a film sensor.

  Today, touch panel devices are widely used as input means. The touch panel device includes a touch panel sensor, a control circuit that detects a contact position on the touch panel sensor, wiring, and an FPC (flexible printed circuit board). In many cases, a touch panel device is used as an input unit for various devices (for example, ticket machines, ATM devices, mobile phones, game machines) in which a display device such as a liquid crystal display device or an organic EL display device is incorporated. It is used with. In such a device, the touch panel sensor is disposed on the display surface of the display device, thereby enabling extremely direct input to the display device. The area | region which faces the display area of a display apparatus among touch panel sensors is transparent, and this area | region of a touch panel sensor comprises the active area which can detect a contact position (approach position).

  As a touch panel sensor, a projection capacitive coupling type touch panel sensor is known. In the capacitive coupling type touch panel sensor, when an external conductor (typically, a finger) whose position is to be detected contacts (approaches) the touch panel sensor via a dielectric, a strange capacitance is newly generated. The position of the external conductor on the touch panel sensor is detected on the basis of the change in capacitance caused by this strange capacitance. Such a projected capacitively coupled touch panel sensor includes, for example, a base material and a plurality of detection patterns provided on the base material. The detection pattern is for detecting the approach of the external conductor and has conductivity. Known types of detection patterns include those composed of metal conductive wires arranged in a mesh pattern, and those composed of a transparent conductive material having translucency and conductivity. In recent years, in order to make the touch panel sensor thinner and lighter, it has been proposed to replace the base material with glass. That is, it has been proposed to configure the touch panel sensor as a so-called film sensor.

  Incidentally, the elements constituting the display device are generally susceptible to moisture. For example, in an organic EL display device, since an organic light emitting layer is very thin and sensitive to moisture, it is known that dark spots are generated due to intrusion of water vapor. The dark spot is a portion where the organic light emitting layer and the electrode connected to the organic light emitting layer are deteriorated due to moisture, and thus cannot emit light. Also in liquid crystal display devices, it is known that when water vapor enters the liquid crystal display device from the outside, the properties of the liquid crystal deteriorate, resulting in display defects. In order to prevent such characteristic deterioration, the display device is provided with a function for preventing water vapor from entering from the outside.

  In general, the organic EL display device is more sensitive to moisture than the liquid crystal display device. For this reason, regarding an organic EL display device, many configurations for preventing water vapor from entering from the outside have been proposed. For example, Patent Document 1 proposes that an organic EL layer configured by sandwiching an organic light emitting layer between an anode and a cathode is sealed with a substrate and a sealing cap.

JP 2001-310412 A

  As described above, the configuration for preventing water vapor from entering the display device has been mainly incorporated in the display device. However, in order to prevent water vapor from entering more reliably, it is preferable that not only the display device has a barrier property against water vapor but also a touch panel sensor attached to the display device has a barrier property against water vapor.

  On the other hand, in recent years, as described above, in order to make the touch panel sensor thinner and lighter, replacement of the base material from glass to a film has been promoted. However, the water vapor transmission rate in films such as PET is significantly higher than the water vapor transmission rate in glass. For this reason, substituting the substrate with glass for the glass lowers the effect of suppressing the intrusion of water vapor into the display device by the touch panel sensor.

  The present invention has been made in consideration of such points, and provides a touch panel sensor (film sensor) that can have a high barrier property against water vapor even when a film is used as a substrate. For the purpose. Another object of the present invention is to provide a film sensor manufacturing method, a display device with a touch position detection function, and a laminate for producing a film sensor.

The present invention is a film sensor, comprising: a base film; a first barrier layer provided on one side of the base film; and an external conductor approaching on one side of the first barrier layer And the base film is made of any of cycloolefin polymer, polycarbonate, polyethylene naphthalate, polyacrylate, cycloolefin copolymer, or polyethylene terephthalate, and the first barrier layer is , SiO _x1 N _y1 C _Z1 , wherein x1 is in the range of 1.0 to 2.3, y1 is in the range of 0.0 to 1.5, and z1 is It is a film sensor which exists in the range of 0.0-1.0.

  In the film sensor according to the present invention, the first barrier layer may further include a chemical resistant layer provided on one side of the first inorganic layer. In this case, the dissolution rate of the chemical resistant layer in the alkaline solution is preferably 1/10 or less of the dissolution rate of the first inorganic layer in the alkaline solution. Here, the alkaline solution is composed of a potassium hydroxide solution whose temperature is adjusted within a range of 20 to 35 ° C. and added at a concentration of 10 to 200 g / L.

  In the film sensor according to the present invention, the PV value in the range of 216 μm × 216 μm of the surface on one side of the base film is preferably 0.5 μm or less.

In the film sensor according to the present invention, the water vapor permeability of the first barrier layer is preferably 5.0 × 10 ⁻² g / m ² day or less.

In the film sensor according to the present invention, the film sensor may further include a second barrier layer provided on one side of the first barrier layer and the detection pattern so as to cover the first barrier layer and the detection pattern. . In this case, preferably, the water vapor permeability of the second barrier layer is 1.0 × 10 ⁻² g / m ² day or less.

  In the film sensor according to the present invention, the detection pattern is a conductive wire having light shielding properties and electrical conductivity, and is arranged in a predetermined pattern on one side of the first barrier layer so that an opening is formed between the conductive wires. You may be comprised from the made conducting wire.

  In the film sensor according to the present invention, the detection pattern may be arranged in a predetermined pattern on one side of the first barrier layer, and may be composed of a transparent conductive layer having translucency and conductivity.

The present invention provides a laminate including a base film, a first barrier layer provided on one side of the base film, and a conductive layer provided on one side of the first barrier layer. A step of providing a photosensitive layer on one side of the laminate, a step of exposing the photosensitive layer in a predetermined pattern, and developing the photosensitive layer using a developer to pattern the photosensitive layer. And a step of etching the conductive layer using the patterned photosensitive layer as a mask to obtain a detection pattern for detecting the approach of an external conductor, wherein the base film is a cycloolefin The first barrier layer is made of any one of polymer, polycarbonate, polyethylene naphthalate, cycloolefin copolymer or polyethylene terephthalate, and the first barrier layer is made of SiO. comprises a first inorganic layer composed of _x1 N _y1 C _{Z1, x1} is in the range of 1.0 to 2.3, y1 is in the range of 0.0-1.5, z1 is 0. It is the manufacturing method of a film sensor which exists in the range of 0-1.0.

  In the method of manufacturing a film sensor according to the present invention, the first barrier layer may further include a chemical resistant layer provided on one side of the first inorganic layer. In this case, the dissolution rate of the chemical resistant layer in the developer is preferably 1/10 or less of the dissolution rate of the first inorganic layer in the developer.

  In the method for producing a film sensor according to the present invention, the step of preparing the laminate includes a film forming step of forming a first barrier layer on one side of the base film, and in the middle of the film forming step, A step of exposing the base film to a plasma atmosphere may be performed.

  The present invention includes a display device and a touch panel sensor disposed on a display surface of the display device, and the display device includes an organic EL display device using light emitted from an organic light emitting layer, The touch panel sensor is a display device with a touch position detection function including the film sensor described above.

The present invention is a laminate for producing a film sensor, which is provided on one side of a base film, a first barrier layer provided on one side of the support film, and the first barrier layer. The base film is made of any one of cycloolefin polymer, polycarbonate, polyethylene naphthalate, cycloolefin copolymer, or polyethylene terephthalate, and the first barrier layer is made of SiO _x1 N including a first inorganic layer composed of _y1 C _Z1 , x1 is in the range of 1.0 to 2.3, y1 is in the range of 0.0 to 1.5, and z1 is 0.0 to It is a laminated body within the range of 1.0.

The film sensor according to the present invention includes a base film, a first barrier layer provided on one side of the base film, and a detection pattern provided on one side of the first barrier layer to detect the approach of an external conductor. And. The first barrier layer includes a first inorganic layer composed of SiO _x1 N _y1 C _Z1 . The base film is composed of any of cycloolefin polymer (COP), polycarbonate (PC), or polyethylene naphthalate (PEN). For this reason, the surface of a base film has high flatness. Therefore, the first inorganic layer can be formed on the surface on one side of the base film with little or no defects such as pinholes. Thereby, a first barrier layer having a high barrier property against water vapor can be obtained. As a result, a film sensor having a reduced thickness and weight and having a high barrier property against water vapor can be provided.

FIG. 1 is a development view showing a display device with a touch position detection function in an embodiment of the present invention. FIG. 2 is a plan view showing a film sensor used in the display device with a touch position detection function of FIG. FIG. 3 is an enlarged plan view showing a detection pattern in a portion surrounded by a one-dot chain line denoted by reference numeral III in FIG. 4 is a cross-sectional view showing a case where the film sensor is cut along the line IV in FIG. FIG. 5 is an enlarged cross-sectional view of the base material and the conductor shown in FIG. 6A to 6D are views for explaining a film sensor manufacturing method. FIG. 7 is a view showing a laminate manufacturing apparatus for manufacturing a laminate used to produce a film sensor. 8 is a view showing a film forming apparatus of the laminate manufacturing apparatus shown in FIG. FIG. 9 is a view showing a base film that hardly causes defects when forming the first inorganic layer. FIG. 10 is a diagram showing a base film that easily causes defects when forming the first inorganic layer. FIG. 11 is a view showing a preferred example of the winding device of the laminate manufacturing apparatus shown in FIG. FIGS. 12A and 12B are diagrams illustrating an example of a first inorganic layer formed when foreign matter is present on a base film. FIGS. 13A, 13B, and 13C are diagrams showing other examples of the first inorganic layer formed when foreign matter is present on the base film. FIG. 14 is a cross-sectional view showing a modification of the first barrier layer of the film sensor. 15 is a cross-sectional view showing a laminate used for producing the film sensor shown in FIG. FIG. 16 is a cross-sectional view illustrating an example of a film sensor further including a second barrier layer. FIG. 17 is a cross-sectional view illustrating another example of a film sensor further including a second barrier layer. FIG. 18 is a cross-sectional view showing a modification of the film sensor. FIG. 19 is a cross-sectional view showing another modification of the film sensor.

  Hereinafter, embodiments of the present invention will be described with reference to FIGS.

Display Device with Touch Position Detection Function First, a display device 10 with a touch position detection function provided with a film sensor 31 will be described with reference to FIG. As shown in FIG. 1, the display device with a touch position detection function 10 is configured by combining a film sensor 31 and a display device 15 such as a liquid crystal display device or an organic EL display device. The illustrated display device 15 is configured as a flat panel display. The display device 15 includes a display panel 16 having a display surface 16 a and a display control unit (not shown) connected to the display panel 16. The display panel 16 includes an active area A1 that can display an image, and an inactive area (also referred to as a frame area) A2 that is disposed outside the active area A1 so as to surround the active area A1. . The display control unit processes information regarding the video to be displayed, and drives the display panel 16 based on the video information. The display panel 16 displays a predetermined image on the display surface 16a based on a control signal from the display control unit. That is, the display device 15 plays a role as an output device that outputs information such as characters and drawings as video.

  As shown in FIG. 1, the film sensor 31 is bonded to the display surface 16a of the display device 15 via, for example, an adhesive layer (not shown). In FIG. 1, reference numerals 32a and 32b denote a pair of opposing surfaces of a support film 32 (described later) of the film sensor 31, respectively. Among these, the surface 32b is a surface facing the display device 15 side, and the surface 32a is a surface facing the observer side.

Film Sensor Next, the film sensor 31 will be described with reference to FIG. FIG. 2 is a plan view showing the film sensor 31 when viewed from the observer side.

  Here, an example in which the film sensor 31 is configured as a projection type capacitive coupling type will be described. As shown in FIG. 2, the film sensor 31 includes a support film 32 and a plurality of detection patterns 41 provided on the support film 32. As shown in FIG. 2, each detection pattern 41 is configured such that its outline extends in a band shape. In addition, when each detection pattern 41 is comprised by the some conducting wire 51 arrange | positioned at mesh shape so that it may mention later, the outline of each detection pattern 41 is demarcated by the conducting wire 51 located in the outermost side in each detection pattern 41. The The plurality of detection patterns 41 are arranged at a constant arrangement pitch in a direction orthogonal to the direction in which each detection pattern 41 extends. The arrangement pitch of the detection patterns 41 is determined according to the resolution required for detecting the touch position.

  As shown in FIG. 2, the support film 32 that supports the detection pattern 41 includes a rectangular active area Aa1 corresponding to an area where the touch position can be detected, and a rectangular frame-like inactive located around the active area Aa1. Area Aa2. Each of the active area Aa1 and the inactive area Aa2 is partitioned corresponding to an active area and an inactive area of the display device of the display device with a touch position detection function 10 described later.

  The detection pattern 41 described above is arranged in the active area Aa1. In the inactive area Aa2, a plurality of frame wirings 43 electrically connected to each detection pattern 41 and a plurality of terminals arranged near the outer edge of the support film 32 and electrically connected to each frame wiring 43 Part 44 is provided.

  Next, the pattern shape of the detection pattern 41 will be described with reference to FIG. FIG. 3 is a plan view showing a detection pattern 41 in a portion surrounded by a one-dot chain line denoted by reference numeral III in FIG. As shown in FIG. 3, the detection pattern 41 is a conductive wire 51 having light shielding properties and electrical conductivity, and is composed of conductive wires 51 arranged in a mesh shape so that openings 51 a are formed between the conductive wires 51. ing.

  The ratio of the area occupied by the opening 51a (hereinafter referred to as the aperture ratio) in the total area of the detection pattern 41 is sufficiently high, so that the image light from the display device can be transmitted through the film sensor 31 with an appropriate transmittance. As long as it can permeate | transmit the active area Aa1, the dimension and shape of the conducting wire 51 are not specifically limited. For example, in the example shown in FIG. 3, the detection pattern 41 is configured by arranging conductive wires 51 formed in a rectangular shape along a predetermined direction. Moreover, the conducting wire 51 is about 5 micrometers, for example, and the space | interval (opening pitch) between each conducting wire 51 is in the range of 100-500 micrometers, for example. In addition, the specific pattern of the conducting wire 51 constituting the detection pattern 41 is not particularly limited. For example, although not shown, the detection pattern 41 may be configured by arranging the conductive wires 51 formed in a rhombus shape along a predetermined direction.

  Next, the layer configuration of the film sensor 31 will be described with reference to FIGS. 4 and 5. 4 is a cross-sectional view showing a case where the film sensor 31 is cut along the line IV in FIG. 3, and FIG. 5 is a cross-sectional view showing a part of FIG. 4 in an enlarged manner. As shown in FIG. 4, the film sensor 31 includes a support film 32 and a conductive wire 51 provided on a surface on one side of the support film 32, for example, a surface 32 a on the observer side.

(Support film)
The support film 32 includes a base film 33 and a first barrier layer 35 provided on one side of the base film 33. The base film 33 is provided to ensure rigidity and strength for supporting the patterns and wirings such as the detection pattern 41 and the frame wiring 43 described above. The first barrier layer 35 is provided to ensure a desired barrier property against water vapor. The first barrier layer 35 is configured to spread over at least the entire active area Aa1 of the base film 33. Hereinafter, the base film 33 and the first barrier layer 35 will be described in detail.

[First barrier layer]
First, the first barrier layer 35 will be described. In the present embodiment, the first barrier layer 35 includes a first inorganic layer 35a made of an inorganic material having a high barrier property against water vapor. The inorganic material constituting the first inorganic layer 35a, may include, for example, a _SiO x1 _N y1 _{C Z1.} Here, x1 is in the range of 1.0 to 2.3, more preferably in the range of 1.6 to 2.3, y1 is in the range of 0.0 to 1.5, z1 is in the range of 0.0 to 1.0. Thus, the amount of oxygen contained in SiO _x1 N _y1 C _Z1 is extremely large compared to the amounts of nitrogen and carbon. Therefore, it can be said that the SiO _x1 N _y1 C _Z1 constituting the first inorganic layer 35a is mainly composed of silicon oxide, which is an inorganic substance, and a small amount of nitrogen and carbon are added. As will be described later, the first inorganic layer 35a composed of SiO _x1 N _y1 C _Z1 is formed by a physical vapor deposition method such as a sputtering method or a vacuum evaporation method.

  By the way, the barrier property realized by the first inorganic layer 35a is influenced not only by the characteristics of the material constituting the first inorganic layer 35a but also by the film formation state of the first inorganic layer 35a. For example, when defects such as pinholes exist in the first inorganic layer 35a, water vapor passes through the defects even if the barrier property of the material itself constituting the first inorganic layer 35a is sufficiently high. Therefore, the barrier property of the first inorganic layer 35a is lowered. For this reason, in order to improve the barrier property realized by the first inorganic layer 35a, it is important to form the first inorganic layer 35a as a film having almost no defects or no defects. Here, as described above, the first inorganic layer 35a is formed by physical vapor deposition such as sputtering or vacuum deposition. In this case, whether or not a defect occurs when the first inorganic layer 35a is formed depends on the flatness of the surface of the object on which the material constituting the first inorganic layer 35a is formed, that is, the surface of the base film 33. It is greatly affected by the flatness. This is because when the surface of the base film 33 is low in flatness and there are many steep irregularities, the atoms and molecules of the material constituting the first inorganic layer 35a are deeply inside the recesses on the surface of the base film 33. This is because the location where atoms and molecules cannot reach becomes defects such as pinholes.

[Base film]
Thus, in the present embodiment, it is important to use the base film 33 having a surface having sufficient flatness. Under such demands, the present inventors have made, as a material constituting the base film 33, cycloolefin polymer (COP), polycarbonate (PC), polyethylene naphthalate (PEN), polyacrylate, cycloolefin copolymer or polyethylene. We propose to use one of the terephthalates. As a result of intensive studies by the present inventors, the base film 33 composed of these materials is combined with the first barrier layer 35 including the first inorganic layer 35a formed by physical vapor deposition. As a result, a high barrier property against water vapor could be achieved. By using the above-mentioned materials such as COP, PC, PEN, etc., it is possible to ensure high flatness on the surface of the base film 33 on the first inorganic layer 35a side. This is considered to be because the first inorganic layer 35a could be formed on the base film 33 with almost no defects. In addition, as long as the high flatness in the surface at the side of the 1st inorganic layer 35a of the base film 33 is ensured, in addition to the above-mentioned materials, such as COP, PC, and PEN, the base film 33 further contains an additive etc. May be included.

  Conventionally, arithmetic average roughness Ra, maximum height Ry, ten-point average roughness Rz, and the like have been used as indices representing the flatness of the surface of a member. These are indexes calculated by paying attention to the depth of the concave portion formed on the surface and the height of the convex portion. However, as a result of intensive studies by the present inventors, it has been found that it is not sufficient to reduce the depth of the concave portions and the height of the convex portions in order to obtain a film having no defects. Specifically, in order to obtain a film having no defects, it is important to make the slope of the surface relief gentle in addition to reducing the depth of the concave portions and the height of the convex portions on the surface. I found it. Based on such knowledge, the present inventors adopt a PV value (Peak to Valley) as an index of the flatness of the surface of the base film 33 required for obtaining the defect-free first inorganic layer 35a. Propose that. The PV value is the difference between the highest point and the lowest point on the surface within a predetermined range. As a measuring instrument for measuring the PV value, for example, a white interferometer manufactured by ZYGO can be used.

As a result of intensive studies by the present inventors, in order to form a film made of SiO _x1 N _y1 C _Z1 without causing defects such as pinholes, it is within a predetermined measurement range, specifically 216 μm × It has been found that the PV value within the range of 216 μm is preferably 0.5 μm or less. Here, according to the present embodiment, by using COP, PC, PEN or the like as the material of the base film 33, the surface of the base film 33 on which the first inorganic layer 35a is provided is within a range of 216 μm × 216 μm. The PV value can be 0.5 μm or less. For this reason, the 1st barrier layer 35 containing the 1st inorganic layer 35a without a defect can be obtained, and, thereby, the high barrier property with respect to water vapor | steam can be achieved.

  As long as the flatness of the base film 33 is maintained at the interface with the first inorganic layer 35a, other layers may be interposed between the base film 33 and the first inorganic layer 35a. For example, as shown in FIG. 5, a primer layer 34 a provided on the surface on one side of the base film 33 may be interposed between the base film 33 and the first inorganic layer 35 a. The primer layer 34a is a layer provided for improving the adhesion between the base film 33 and the first inorganic layer 35a. The primer layer 34a is thinner than the base film 33 and has a substantially uniform thickness. For this reason, the shape of the base film 33 appears almost as it is on the surface of the primer layer 34a. That is, the PV value of the primer layer 34 a on the base film 33 substantially matches the PV value of the surface of the base film 33. In addition, the primer layer 34a may be further provided on the surface of the other side of the base film 33, as shown in FIG.

  By the way, when the base film 33 is supplied by roll-to-roll, if the flatness of the base film 33 is high on both sides, the friction between the base films 33 is taken up when the base film 33 is wound up. It is conceivable that the base films 33 are brought into close contact with each other. In order to prevent such adhesion, the surface of the base film 33 opposite to the first inorganic layer 35a is provided with some element for reducing friction between the base films 33. Also good. For example, an easy-lubricant for reducing friction between the base film 33 may be provided. Specifically, when the base film 33 is composed of polyethylene naphthalate or polyethylene terephthalate, a so-called one-side flat grade film in which a lubricant is provided only on one side is used as the polyethylene naphthalate or polyethylene terephthalate. it can. In addition, by attaching a low-friction protective film to the surface of the base film 33 opposite to the first inorganic layer 35a, or when winding the protective film, the base film 33 You may reduce the friction between the base film 33 by inserting in between.

The water vapor permeability of the first barrier layer 35 constituted by the first inorganic layer 35a provided on one side of the base film 33 is preferably 1.0 × 10 ⁻² g / m ² day or less. . Thereby, when the display device 15 sensitive to moisture, such as an organic EL display device, and the film sensor 31 are combined, the film sensor 31 can suppress deterioration of the characteristics of the display device 15. Note that the water vapor permeability of the first barrier layer 35 is obtained by first preparing a base film 33 and an evaluation laminate including the first barrier layer 35 formed on the base film 33, and the water vapor of the evaluation laminate. It can be calculated by measuring the transmittance. In general, the water vapor transmission rate of the base film 33 alone is extremely higher than the water vapor transmission rate of the first barrier layer 35 alone. For this reason, it can be said that the water vapor transmission rate obtained by measuring the test laminate is substantially equal to the water vapor transmission rate of the first barrier layer 35 alone. The measurement of the water vapor transmission rate is performed under a temperature of 40 degrees and a humidity of 90% RH using, for example, a water vapor transmission rate measurement device (Delta Palm manufactured by Technolox).

(Conductor)
Next, the layer structure of the conducting wire 51 provided on the support film 32 will be described. The conducting wire 51 is composed of a conductive layer 52 having conductivity. As long as the conductive layer 52 has conductivity, the specific structure of the conductive layer 52 is not particularly limited, but for example, as shown in FIG. 5, the conductive layer 52 is a low-layer disposed in order from the support film 32 side. The reflective layer 54, the main body layer 53, and the antirust layer 55 are included.

(Main body layer)
The main body layer 53 is a layer for mainly realizing the conductivity of the conductive wire 51 and is made of a metal material. Examples of the metal material constituting the main body layer 53 include copper and silver. Here, an example in which the main body layer 53 is made of copper will be described.

(Low reflection layer)
The low reflection layer 54 is a layer provided to suppress the metallic luster of the main body layer 53 from being visually recognized by an observer. Examples of the material constituting the low reflective layer 54 include a copper compound made of CuO _x2 N _y2 . Here, x2 is in the range of 0.0 to 0.8, and y2 is in the range of 0.0 to 0.7.

(Rust prevention layer)
The rust prevention layer 55 is provided in order to prevent the surface of the main body layer 53 from being rusted and denatured, thereby deteriorating the electrical characteristics and the like of the main body layer 53. As a material constituting the rust prevention layer 55, a material that is less likely to rust than the material constituting the main body layer 53 is used. The rust prevention layer 55 may be configured to exhibit not only a function of preventing the surface of the main body layer 53 from rusting but also a function of preventing reflection of light by the conductive wire 51. That is, the rust preventive layer 55 may be configured such that its metallic luster is reduced as compared with the metallic luster in the main body layer 53.

  A specific material for constituting the rust prevention layer 55 is appropriately selected according to characteristics required for the rust prevention layer 55 such as rust prevention and antireflection characteristics. For example, the rust prevention layer 55 includes at least one copper compound selected from the group consisting of CuNi, CuCr, CuW, and CuTi. Among these, CuNi may be configured as so-called white copper containing 20% by weight of Ni, for example.

(Frame wiring and terminal part)
The frame wiring 43 and the terminal portion 44 connected to the detection pattern 41 are provided for taking out a signal from the detection pattern 41 to the outside of the film sensor 31. As long as signals can be appropriately transmitted, the specific configurations of the frame wiring 43 and the terminal portion 44 are not particularly limited. For example, the frame wiring 43 and the terminal portion 44 may be formed at the same time as the conducting wire 51 with the same layer configuration as the conducting wire 51.

Method for Manufacturing Film Sensor Next, a method for manufacturing the film sensor 31 having the above configuration will be described with reference to FIGS.

  First, as shown in FIG. 6A, a laminate 60 (also referred to as a blank) as a base material for producing the film sensor 31 is prepared. The laminate 60 includes a support film 32 and a conductive layer 52 provided on the support film 32. As described above, the support film 32 is provided on the base film 33, the primer layer 34 a provided on both sides of the base film 33, and the primer layer 34 a on one side of the base film 33. First barrier layer 35 formed. The first barrier layer 35 includes the first inorganic layer 35a described above. The conductive layer 52 includes a low reflection layer 54, a main body layer 53, and a rust prevention layer 55 that are arranged in this order from the first barrier layer 35 side.

  Hereinafter, an example of a method for producing the stacked body 60 will be described. First, the elongate base film 33 in which the primer layer 34a was provided in the surface of both sides is prepared. Next, the first inorganic layer 35 a for constituting the first barrier layer 35 is formed on the primer layer 34 a provided on one side of the base film 33. As a method for forming the first inorganic layer 35a, a physical vapor deposition method such as a sputtering method or a vacuum evaporation method can be used. Similarly, as a method of forming the low reflection layer 54, the main body layer 53, and the antirust layer 55, a physical vapor deposition method such as a sputtering method or a vacuum evaporation method can be used.

  Hereinafter, with reference to FIG. 7 and FIG. 8, an example of an apparatus used for manufacturing the stacked body 60 will be described. FIG. 7 is a view showing the laminate manufacturing apparatus 1 for producing the laminate 60. As shown in FIG. 7, the laminate manufacturing apparatus 1 includes the unwinding device 80 for unwinding the base film 33, and the first on the base film 33, strictly on the primer layer 34 a on the base film 33. A film forming apparatus 90 for forming the inorganic layer 35a and a winding apparatus 85 for winding the base film 33 provided with the first inorganic layer 35a are provided.

  FIG. 8 is an enlarged view showing the film forming apparatus 90 of FIG. As shown in FIG. 8, the film forming apparatus 90 is provided with four regions 91, 92, 93, 94 partitioned by a partition wall 96a. Each region 91, 92, 93, 94 is made of silicon. Targets 91a, 92a, 93a, and 94a are arranged. Although not shown, the laminate manufacturing apparatus 1 may further include a film forming apparatus for forming the low reflection layer 54, the main body layer 53, and the rust prevention layer 55.

In the film forming step of forming SiO _x1 N _y1 C _Z1 constituting the first inorganic layer 35 a on the base film 33, first, the base film 33 wound around the shaft 81 of the unwinding device 80 is formed. Unwinding toward the device 90. In the film forming apparatus 90, SiO _x1 N _y1 C _Z1 is formed on the base film 33 by sputtering while the base film 33 is wound around the transport drum 98 and transported. Specifically, first, the gas inside each region 91, 92, 93, 94 is exhausted to the outside by the exhaust means 91b, 92b, 93b, 94b, and thereby each region 91, 92, 93, 94 is evacuated. To do. Thereafter, an inert gas such as argon is introduced into each of the regions 91, 92, 93, and 94, and a gas serving as a raw material for SiO _x1 N _y1 C _Z1 such as oxygen gas or nitrogen gas is introduced. Thereafter, discharge power is applied to each target 91a, 92a, 93a, 94a. A film made of SiO _x1 N _y1 C _Z1 can be sequentially laminated on the base film 33 in each of the regions 91, 92, 93, 94 by the sputtering phenomenon generated thereby. This makes it possible to obtain a first inorganic layer 35a made of _SiO x1 _N y1 _{C Z1} having a desired thickness. The thickness of the first inorganic layer 35a is, for example, in the range of 20 to 80 nm. The carbon in SiO _x1 N _y1 C _Z1 may be obtained by intentionally introducing a gas containing carbon into each of the regions 91, 92, 93, 94, or as an inevitable impurity. It may be obtained.

  Thereafter, in the winding device 85, the support film 32 including the base film 33 and the first barrier layer 35 made of the first inorganic layer 35 a formed on the base film 33 is wound by the shaft 86. .

  Here, according to the present embodiment, as described above, the base film 33 having a PV value within a predetermined measurement range of 0.5 μm or less is used as a base when the first inorganic layer 35a is formed. It has been. For this reason, the first inorganic layer 35a can be formed with little or no defects such as pinholes. Thereby, the first barrier layer 35 having a high barrier property against water vapor can be obtained. Hereinafter, the advantage of setting the PV value in this way will be further described with reference to FIGS. 9 and 10.

  9 and 10, the highest point (maximum value within the illustrated range) and the lowest point (within the illustrated range) of the surface on one side of the base film 33 within the illustrated range. The difference between the minimum value and the minimum value is indicated by reference signs A1 and A2. 9 and 10, the highest point (maximum value within the range R) and the lowest point (maximum value within the range R) on the surface of one side of the base film 33 within the predetermined measurement range R. The difference between the minimum value and the minimum value is indicated by reference symbols B1 and B2. As is clear from the figure, the undulation of the surface of the base film 33 shown in FIG. 9 is gentler than the surface of the base film 33 shown in FIG. The height differences A1 and A2 are equal to each other.

In the example shown in FIG. 10, the surface of the base film 33 is undulating. For this reason, even if atoms and molecules fly toward the lowest point of the concave portion on the surface of the base film 33 during the film forming process, such atoms and molecules are more likely to reach the lowest point of the concave portion. Before, it collides with the other area | region of the surface of the base film 33, a part of already formed 1st inorganic layer 35a, etc. with high probability. As a result, as shown in FIG. 10, a region where SiO _x1 N _y1 C _Z1 does not exist, that is, a pinhole can be formed around the lowest point of the concave portion on the surface of the base film 33. In the form shown in FIG. 10, the period of surface undulation is shorter than the predetermined measurement range R. For this reason, B2, which is a PV value within the predetermined measurement range R, is equal to A2.

  On the other hand, in the example shown in FIG. 9, the undulations on the surface of the base film 33 are gentle. For this reason, in the film-forming process, the atoms and molecules that are the raw materials of the first inorganic layer 35a can reach the lowest point of the recess. As a result, as shown in FIG. 9, the first inorganic layer 35a can be formed on the base film 33 with little or no defects such as pinholes. In the form shown in FIG. 9, the period of surface undulation is longer than the predetermined measurement range R. For this reason, B1, which is a PV value within the predetermined measurement range R, is smaller than A1.

  When the flatness of the surface of the base film 33 shown in FIGS. 9 and 10 is expressed using arithmetic average roughness Ra, maximum height Ry, ten-point average roughness Rz, etc. as in the prior art, the period of undulation is Since they are not taken into account, the flatness of the two is treated as almost the same. On the other hand, according to the present embodiment, by introducing an index called PV value within a predetermined measurement range, not only the difference between the highest point and the lowest point but also the undulation period is taken into account. The surface flatness of the base film 33 can be expressed. For this reason, a more appropriate surface state of the base film 33 can be accurately defined in forming the first inorganic layer 35a by a physical vapor deposition method such as a sputtering method or a vacuum vapor deposition method. Moreover, according to this Embodiment, the above-mentioned conditions regarding PV value can be satisfied by using COP, PC, or PEN as the material of the base film 33.

  Hereinafter, returning to FIG. 6, a method for manufacturing the film sensor 31 will be described.

  After the laminate 60 is prepared, a photosensitive layer 71 is formed in a predetermined pattern on the conductive layer 52 as shown in FIG. 6B. The photosensitive layer 71 has photosensitivity to light in a specific wavelength range, for example, ultraviolet rays. The type of the photosensitive layer 71 is not particularly limited. For example, a photodissolvable photosensitive layer may be used, or a photocurable photosensitive layer may be used. Here, an example in which a photodissolvable photosensitive layer is used will be described.

  The photosensitive layer 71 is formed in a pattern corresponding to the pattern of the conducting wire 51. The photosensitive layer 71 is formed, for example, by first coating a photosensitive material on the surface of the laminate 60 using a coater, and then exposing and developing the photosensitive material in a predetermined pattern. As the developer, an alkaline solution such as a solution containing potassium hydroxide is used.

  Next, as shown in FIG. 6C, the conductive layer 52 is etched using the photosensitive layer 71 as a mask. As described above, the low reflection layer 54, the main body layer 53, and the rust prevention layer 55 constituting the conductive layer 52 all contain copper. For this reason, the low reflection layer 54, the main body layer 53, and the rust preventive layer 55 can be simultaneously etched using an etching solution capable of dissolving copper. For example, a ferric chloride solution is used as the etching solution.

  Next, exposure light is irradiated to the photosensitive layer 71 remaining on the low reflection layer 54. Thereafter, the photosensitive layer 71 is developed using a developer composed of an alkaline solution. As a result, the photosensitive layer 71 can be removed as shown in FIG. Thus, the film sensor 31 provided with the conducting wire 51 composed of the conductive layer 52 provided on the support film 32 can be obtained.

According to the present embodiment, the support film 32 includes a first barrier layer 35 that includes a base film 33 that is lighter and thinner than glass and a first inorganic layer 35a that is composed of SiO _x1 N _y1 C _Z1. And have. As described above, the first inorganic layer 35a is formed with little or no defects such as pinholes. For this reason, the 1st barrier layer 35 which has the high barrier property with respect to water vapor | steam can be obtained. Accordingly, it is possible to provide the film sensor 31 having a reduced thickness and weight and a high barrier property against water vapor. For this reason, when the film sensor 31 is combined with an organic EL display device, it is possible to suppress deterioration of the characteristics of the organic EL display device due to intrusion of water vapor while suppressing an increase in thickness and weight due to the film sensor 31. Can do.

  Various changes can be made to the above-described embodiment. Hereinafter, modified examples will be described with reference to the drawings. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding parts in the above embodiment are used for the parts that can be configured in the same manner as the above embodiment. The duplicated explanation is omitted. In addition, when it is clear that the operational effects obtained in the above-described embodiment can be obtained in the modified example, the description thereof may be omitted.

(Modification of winding device)
As shown in FIG. 11, the winding device 85 provided on the downstream side of the film forming device 90 for forming the first inorganic layer 35a includes a plasma processing device 88 for exposing the object to a plasma atmosphere. Also good. Hereinafter, advantages obtained by using the plasma processing apparatus 88 will be described with reference to FIGS. 12 (a) and 12 (b) and FIGS. 13 (a), 13 (b), and 13 (c). FIGS. 12A and 12B are views showing the first inorganic layer 35 a that can be formed when the film forming process is performed without using the plasma processing apparatus 88. FIGS. 13A, 13 </ b> B, and 13 </ b> C are views showing the first inorganic layer 35 a that can be formed when the film forming process is performed using the plasma processing apparatus 88.

In a film forming process such as sputtering, the foreign material 101 may adhere to the surface of the base film 33. In general, the size of the foreign matter is much larger than the thickness of the first inorganic layer 35 a formed on the base film 33. For example, the thickness of the first inorganic layer 35a is about several tens of nm, while the size of the foreign material 101 is generally on the order of μm. Accordingly, when such foreign matter 101 exists, the first inorganic layer 35a is formed on the base film 33 while avoiding the foreign matter 101 as shown in FIG. In this case, after the foreign matter 101 is removed, a portion where the foreign matter 101 exists becomes a defect 102 such as a pinhole as shown in FIG. As a result, water vapor passes through the first inorganic layer 35a through the defect 102 and reaches the base film 33, so that it is difficult to sufficiently secure the barrier property of the film sensor 31.
In FIGS. 12A and 12B, the layers denoted by reference numerals 35aa, 35ab, 35ac, and 35ad represent layers obtained by sputtering using targets 91a, 92a, 93a, and 94a, respectively. In the example shown in FIGS. 12A and 12B, since sputtering using the targets 91a, 92a, 93a, and 94a is performed when the foreign matter 101 is present, the layers 35aa, 35ab, 35ac, All of 35ad is formed on the base film 33 while avoiding the foreign matter 101.

Next, a case where the plasma processing apparatus 88 is used will be described. First, as shown in FIG. 13A, the layers 35aa and 35ab are formed on the base film 33 using the targets 91a and 92a. Thereafter, the base film 33 provided with the layers 35aa and 35ab is conveyed to the winding device 85, and the base film 33 is exposed to the plasma atmosphere 88b. As a result, as shown in FIG. 13B, the foreign matter 101 is removed, and the defect 102 remains in the place where the foreign matter 101 was present. Next, after the base film 33 is once wound around the shaft 86, the base film 33 is unwound again from the winding device 85 toward the film forming device 90. Then, the layers 35ac and 35ad are further formed on the layer 35ab by using the targets 93a and 94a while rotating the film-forming drum 98 in the opposite direction to that when the layers 35aa and 35ab are formed. At this time, the foreign matter 101 has already been removed by the plasma treatment. Therefore, as shown in FIG. 13C, the layers 35ac and 35ad can be formed also in the defect 102. That is, the defect 102 formed by the foreign matter 101 can be filled with the layers 35ac and 35ad made of SiO _x1 N _y1 C _Z1 . By performing the plasma treatment in the middle of the film forming process in this way, even if the foreign matter 101 exists on the base film 33 at the beginning of the film forming process, there is no defect in the first inorganic layer 35a. Can be obtained.

  In the above-described example, the sputtering using the targets 91a and 92a is performed in the forward path and the sputtering using the targets 93a and 94a is performed in the backward path. However, the present invention is not limited thereto. Sputtering can be performed using any target in both the outward path and the return path.

(Modification of the first barrier layer)
As shown in FIG. 14, the first barrier layer 35 of the film sensor 31 may further include a chemical resistant layer 35b provided on one side of the first inorganic layer 35a. The chemical resistant layer 35b is a layer configured to have higher chemical resistance to an alkaline solution than the first inorganic layer 35a. Specifically, the dissolution rate of the chemical resistant layer 35b in the alkaline solution is 1/10 or less of the dissolution rate of the first inorganic layer 35a in the alkaline solution. The dissolution rate is the rate of change per unit time in the thickness of the first inorganic layer 35a and the chemical resistant layer 35b when the first inorganic layer 35a and the chemical resistant layer 35b are exposed to an alkaline solution. As an alkaline solution for evaluating chemical resistance, a solution of potassium hydroxide having a temperature adjusted within a range of 20 to 35 ° C. and added at a concentration of 10 to 200 g / L can be used. As a material constituting such a chemical resistant layer 35b, for example, alumina can be used. The thickness of the chemical resistant layer 35b is set, for example, within a range of 1 to 100 nm, and more preferably within a range of 3 to 40 nm.

  The above-described alkaline solution used for evaluating the chemical resistance of the chemical-resistant layer 35 b is a simulation of the above-described developer used for developing the photosensitive layer 71 in the manufacturing process of the film sensor 31. Therefore, the chemical resistance of the chemical resistant layer 35b is “the dissolution rate of the chemical resistant layer 35b in the developer used in the manufacturing process of the film sensor 31 is 1/10 or less of the dissolution rate of the first inorganic layer 35a in the developer”. It may be defined as follows.

  Hereinafter, the advantage that the first barrier layer 35 further includes the chemical resistant layer 35b will be described. FIG. 15 is a cross-sectional view showing a laminate 60 used to produce the film sensor 31 shown in FIG.

The process of manufacturing the film sensor 31 using the laminate 60 is a process of removing the photosensitive layer 71 remaining on the conductive layer 52 patterned by etching using a developer composed of an alkaline solution, as described above. Is included. At this time, since the conductive layer 52 on the first barrier layer 35 is partially removed, a part of the first barrier layer 35 is exposed to the developer. In general, _SiO x1 _N y1 _{C Z1} constituting the first inorganic layer 35a is such as a solution containing potassium hydroxide, vulnerable to alkaline solutions. For this reason, when the first inorganic layer 35a is exposed to the developing solution, the first inorganic layer 35a is partially dissolved. As a result, defects occur in the first inorganic layer 35a, and the barrier of the first inorganic layer 35a. It is conceivable that the performance will deteriorate.

  Here, according to this modification, the chemical resistant layer 35b having high chemical resistance is provided on one side of the first inorganic layer 35a. For this reason, even if it is a case where an alkaline solution is used in the manufacturing process of the film sensor 31, etc., it can prevent the 1st inorganic layer 35a being exposed to an alkaline solution. Thereby, the barrier property realized by the first barrier layer 35 can be maintained.

(Modification in which a second barrier layer is further provided)
As shown in FIG. 16, the film sensor 31 further includes a second barrier layer 37 provided on one side of the first barrier layer 35 and the detection pattern 41 so as to cover the first barrier layer 35 and the detection pattern 41. May be. The 2nd barrier layer 37 is comprised so that it may spread over the whole active area Aa1 of the base film 33 at least. By further providing such a second barrier layer 37, the barrier property of the film sensor 31 against water vapor can be further enhanced.

As shown in FIG. 16, the second barrier layer 37 includes an organic layer 37a and a second inorganic layer 37b provided on the surface on one side of the organic layer 37a. The organic layer 37a is formed by applying a coating liquid containing an organic resin onto the first barrier layer 35 and the detection pattern 41, and then drying the coating liquid. An acrylic resin or the like can be used as the organic resin. On the other hand, the second inorganic layer 37b is formed on the organic layer 37a by a physical vapor deposition method such as a sputtering method or a vacuum evaporation method, similarly to the first inorganic layer 35a described above. As a material constituting the second inorganic layer 37b, SiO _x1 N _y1 C _Z1 can be used as in the case of the first inorganic layer 35a. Incidentally, the composition of _SiO x1 _N y1 _{C Z1} constituting the first inorganic layer 35a, the composition of the _SiO x1 _N y1 _{C Z1} constituting the second inorganic layer 37b, may be the same or different Good.

The thickness of the organic layer 37 a is at least larger than the thickness of the conductive layer 52. By providing such an organic layer 37a, as shown in FIG. 16, the second inorganic layer 37b can be provided on a flat surface constituted by the organic layer 37a. Therefore, as in the case of the first inorganic layer 35a, the second inorganic layer 37b can be formed on the organic layer 37a with almost no defects such as pinholes. Thereby, the second barrier layer 37 having a high barrier property can be obtained. Similarly to the first barrier layer 35, the water vapor transmission rate of the second barrier layer 37 is, for example, 1.0 × 10 ⁻² g / m ² day or less. Note that the method for measuring the water vapor transmission rate of the second barrier layer 37 is the same as the method for measuring the water vapor transmission rate of the first barrier layer 35, and thus the description thereof is omitted.

  In the step of forming the organic layer 37a, a method for forming the organic layer 37a having a flat surface is employed as a method for applying the coating liquid containing the organic resin. For example, a slit reverse coating method or a die coating method can be used. Preferably, on the surface on one side of the organic layer 37a, as in the case of the first inorganic layer 35a, the condition that “the PV value within the range of 216 μm × 216 μm is 0.5 μm or less” is satisfied. Yes.

  FIG. 16 shows an example in which the second barrier layer 37 includes the organic layer 37a and the second inorganic layer 37b. However, as long as the second barrier layer 37 can realize a desired barrier property, The specific layer structure of the barrier layer 37 is not particularly limited. For example, as shown in FIG. 17, the second barrier layer 37 may be composed of a single layer 37c. As a material constituting the layer 37c, a material having a high barrier property and a fluidity that can fill the space between the adjacent conductive layers 52 without any gap is used. As such a layer 37c, for example, a siloxane polymer layer 37c made of a siloxane polymer obtained by a sol-gel method can be employed.

(Modification of film sensor)
In the above-described embodiment and each modification, an example in which the detection pattern 41 is provided only on the surface 32a on one side of the support film 32 has been described. However, the present invention is not limited to this, and as shown in FIG. 18, the film sensor 31 has a surface 32 b on the other side in addition to the detection pattern 41 provided on the surface 32 a on one side of the support film 32. You may further provide the detection pattern 41 provided on the top. In this case, as shown in FIG. 18, the support film 32 of the film sensor 31 is provided on the other side of the base film 33 in addition to the first barrier layer 35 provided on one side of the base film 33. The first barrier layer 35 may be further included.

  Note that the configuration for providing the detection patterns 41 on both sides is not limited to the configuration shown in FIG. For example, as shown in FIG. 19, a film sensor provided with detection patterns 41 on both sides can be obtained by bonding two film sensors 31 together.

(Other variations)
In the above-described embodiment and each modification, an example in which the detection pattern 41 of the film sensor 31 is configured by the metal conductive wires 51 arranged in a mesh shape is shown. However, the configuration of the detection pattern 41 is not particularly limited as long as the desired detection sensitivity of the touch position can be realized. For example, the detection pattern 41 may be arranged in a predetermined pattern on one side of the first barrier layer 35 and may be formed of a transparent conductive layer having translucency and conductivity.

  In addition, although some modified examples with respect to the above-described embodiment have been described, naturally, a plurality of modified examples can be applied in combination as appropriate.

DESCRIPTION OF SYMBOLS 10 Display apparatus with a touch position detection function 15 Display apparatus 31 Film sensor 33 Base film 35 1st barrier layer 35a 1st inorganic layer 35b Chemical resistant layer 37 2nd barrier layer 37a Organic layer 37b 2nd inorganic layer 37c Siloxane polymer layer 41 Detection Pattern 51 Conductive wire 52 Conductive layer 60 Laminate 71 Photosensitive layer 85 Winding device 88 Plasma processing device 101 Foreign matter 102 Defect

Claims (9)

A film sensor,
A base film;
A first barrier layer provided on one side of the substrate film;
A detection pattern provided on one side of the first barrier layer to detect the approach of the outer conductor,
The base film is composed of any of cycloolefin polymer, polycarbonate, polyethylene naphthalate, cycloolefin copolymer or polyethylene terephthalate,
The first barrier layer includes a first inorganic layer composed of SiO _x1 N _y1 C _Z1 , where x1 is in the range of 1.0 to 2.3, and y1 is in the range of 0.0 to 1.5. Z1 is in the range of 0.0 to 1.0,
The first inorganic layer includes at least one layer in which a defect penetrating the first inorganic layer is formed; and a further layer formed on the at least one layer and in the defect;
The surface of the surface of the said further layer located in the other side of the said base film has a shape along the shape of the said defect in the said defect. The first barrier layer further includes a chemical resistant layer provided on one side of the first inorganic layer,
The dissolution rate of the chemical resistant layer in the alkaline solution is 1/10 or less of the dissolution rate of the first inorganic layer in the alkaline solution,
The film sensor according to claim 1, wherein the alkaline solution is a potassium hydroxide solution that is temperature-controlled within a range of 20 to 35 ° C. and added at a concentration of 10 to 200 g / L.   The film sensor of Claim 1 or 2 whose PV value in the range of 216 micrometers x 216 micrometers of the surface of the one side of the said base film is 0.5 micrometer or less. 4. The film sensor according to claim 1, wherein the water vapor permeability of the first barrier layer is 5.0 × 10 ⁻² g / m ² day or less. A second barrier layer provided on one side of the first barrier layer and the detection pattern so as to cover the first barrier layer and the detection pattern;
5. The film sensor according to claim 1, wherein the water vapor permeability of the second barrier layer is 1.0 × 10 ⁻² g / m ² day or less.   The detection pattern is a conductive wire having a light shielding property and a conductive property, and includes a conductive wire arranged in a predetermined pattern on one side of the first barrier layer so that an opening is formed between the conductive wires. The film sensor according to any one of claims 1 to 5.   6. The detection pattern according to claim 1, wherein the detection pattern is arranged in a predetermined pattern on one side of the first barrier layer, and includes a transparent conductive layer having translucency and conductivity. The film sensor as described. A display device;
A touch panel sensor disposed on a display surface of the display device,
The display device includes an organic EL display device that utilizes light emitted from the organic light emitting layer,
The said touch panel sensor is a display apparatus with a touch position detection function containing the film sensor as described in any one of Claims 1 thru | or 7. A laminate for producing a film sensor,
A base film;
A first barrier layer provided on one side of the substrate film;
A conductive layer provided on one side of the first barrier layer,
The base film is composed of any of cycloolefin polymer, polycarbonate, polyethylene naphthalate, cycloolefin copolymer or polyethylene terephthalate,
The first barrier layer includes a first inorganic layer composed of SiO _x1 N _y1 C _Z1 , where x1 is in the range of 1.0 to 2.3, and y1 is in the range of 0.0 to 1.5. Z1 is in the range of 0.0 to 1.0,
The first inorganic layer includes at least one layer in which a defect penetrating the first inorganic layer is formed; and a further layer formed on the at least one layer and in the defect;
The surface located in the other side of the said base film among the surfaces of the said further layer is a laminated body which has a shape along the shape of the said defect in the said defect.

Images