JP6407764B2 - Substrate processing system, control method for substrate processing system, and storage medium - Google Patents

Description

  The present invention relates to a substrate processing system for processing a substrate using a processing liquid in which a gas is dissolved in a fluid.

  Conventionally, when manufacturing a semiconductor component, a flat panel display, or the like, a substrate processing system is used to perform processing such as cleaning or rinsing on a substrate such as a semiconductor wafer or a liquid crystal substrate using a processing liquid. For example, when a substrate treatment system is used to rinse the substrate with a rinse liquid containing pure water as a main component, a carbonic acid solution in which carbon dioxide gas is dissolved in pure water at a predetermined concentration to prevent the substrate from being charged. Use water. Patent Document 1 discloses an apparatus for producing carbonated water using a carbonate dissolution module (dissolution unit 11).

  As an example of the carbonic acid dissolution module, there is one in which the specific resistance value of pure water is adjusted by allowing carbon dioxide gas flowing through a flow passage to permeate through a hydrophobic permeable membrane and enter and dissolve in pure water in a processing chamber. In this type of module, pure water may penetrate into and adhere to the hydrophobic permeable membrane in the form of water vapor, which may impede permeation of carbon dioxide gas in the flow path to the processing chamber side. In Patent Document 2, by always allowing a gas in a dry state to flow through the flow passage, water vapor entering the hydrophobic permeable membrane is actively discharged, and the hydrophobic permeable membrane is always kept in a dry state. Yes.

JP 2002-316027 A Japanese Patent Laid-Open No. 02-316027

  However, as in Patent Document 2, there is a problem in that if the dried gas is always circulated in the flow passage in order to keep the permeable membrane in a constantly dried state, the consumption of the gas used increases and the cost increases. Arise.

  The present invention is intended to solve the above-described problems, and an object thereof is to appropriately maintain the specific resistance value of pure water while suppressing gas consumption.

In order to achieve the above object, a substrate processing system of the present invention is a substrate processing system for processing a substrate using a processing liquid in which a gas is dissolved in a fluid, the processing unit processing the substrate, and the fluid A fluid supply channel for supplying the gas to the processing unit, a dissolution module provided in the middle of the fluid supply channel, and having a permeable membrane for dissolving the gas in the fluid, and the gas to the dissolution module A gas supply channel to be supplied, a discharge channel for discharging the gas that has passed through the dissolution module, and a state of condensation generated in the permeable membrane of the dissolution module, from the dissolution module to the discharge channel. A control unit for controlling the discharge of the gas or the dew condensation water, and the processing unit side of the fluid supply channel with respect to the dissolution module, and the specific resistance value of the fluid is measured. A control unit, wherein the control unit calculates a specific resistance value threshold value determined in advance from a relationship between a specific resistance value and the amount of condensed water, and a specific resistance value of the fluid measured by the measurement unit. According to the comparison result, the dew condensation water is discharged from the melting module to the discharge channel.

According to the present invention, it is possible to appropriately maintain the state of the processing liquid (for example, the specific resistance value of pure water) while suppressing gas consumption.

Plane explanatory drawing which shows schematic structure of a substrate processing system. Side surface explanatory drawing which shows schematic structure of a processing unit. Explanatory drawing which shows a process liquid supply unit. Explanatory drawing which shows the detailed structure of a melt | dissolution module. Explanatory drawing which shows the state of the fluid in a dissolution module. The flowchart which shows operation | movement of a process liquid supply unit.

  A specific configuration of the substrate processing system according to the present invention will be described below with reference to the drawings.

  FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment. In the following, in order to clarify the positional relationship, the X axis, the Y axis, and the Z axis that are orthogonal to each other are defined, and the positive direction of the Z axis is the vertically upward direction.

  As shown in FIG. 1, the substrate processing system 1 includes a carry-in / out station 2 and a processing station 3. The carry-in / out station 2 and the processing station 3 are provided adjacent to each other.

  The carry-in / out station 2 includes a carrier placement unit 11 and a transport unit 12. A plurality of carriers C that accommodate a plurality of substrates, in this embodiment a semiconductor wafer (hereinafter referred to as a wafer W) in a horizontal state, are placed on the carrier placement unit 11.

  The transport unit 12 is provided adjacent to the carrier placement unit 11 and includes a substrate transport device 13 and a delivery unit 14 inside. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the carrier C and the delivery unit 14 using the wafer holding mechanism. Do.

  The processing station 3 is provided adjacent to the transfer unit 12. The processing station 3 includes a transport unit 15 and a plurality of processing units 16. The plurality of processing units 16 are provided side by side on the transport unit 15.

  The transport unit 15 includes a substrate transport device 17 inside. The substrate transfer device 17 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the delivery unit 14 and the processing unit 16 using a wafer holding mechanism. I do.

  The processing unit 16 performs predetermined substrate processing on the wafer W transferred by the substrate transfer device 17.

  Further, the substrate processing system 1 includes a control device 4. The control device 4 is a computer, for example, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores a program for controlling various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the storage unit 19.

  Such a program may be recorded on a computer-readable storage medium, and may be installed in the storage unit 19 of the control device 4 from the storage medium. Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

  In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement unit 11 and receives the taken-out wafer W. Place on the transfer section 14. The wafer W placed on the delivery unit 14 is taken out from the delivery unit 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16.

  The wafer W carried into the processing unit 16 is processed by the processing unit 16, then unloaded from the processing unit 16 by the substrate transfer device 17, and placed on the delivery unit 14. Then, the processed wafer W placed on the delivery unit 14 is returned to the carrier C of the carrier placement unit 11 by the substrate transfer device 13.

  As shown in FIG. 2, the processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a processing fluid supply unit 40, and a recovery cup 50.

  The chamber 20 accommodates the substrate holding mechanism 30, the processing fluid supply unit 40, and the recovery cup 50. An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20. The FFU 21 forms a down flow in the chamber 20.

  The substrate holding mechanism 30 includes a holding unit 31, a support unit 32, and a driving unit 33. The holding unit 31 holds the wafer W horizontally. The support | pillar part 32 is a member extended in a perpendicular direction, a base end part is rotatably supported by the drive part 33, and supports the holding | maintenance part 31 horizontally in a front-end | tip part. The drive unit 33 rotates the column unit 32 around the vertical axis. The substrate holding mechanism 30 rotates the support unit 31 by rotating the support unit 32 using the drive unit 33, thereby rotating the wafer W held by the support unit 31. .

  The processing fluid supply unit 40 supplies a processing fluid to the wafer W. The processing fluid supply unit 40 is connected to a processing fluid supply source 70.

  The collection cup 50 is disposed so as to surround the holding unit 31, and collects the processing liquid scattered from the wafer W by the rotation of the holding unit 31. A drain port 51 is formed at the bottom of the recovery cup 50, and the processing liquid collected by the recovery cup 50 is discharged from the drain port 51 to the outside of the processing unit 16. Further, an exhaust port 52 for discharging the gas supplied from the FFU 21 to the outside of the processing unit 16 is formed at the bottom of the recovery cup 50.

  As shown in FIG. 3, the processing liquid is supplied from the processing liquid supply unit 71 to the processing fluid supply source 70 of each processing unit 16. A processing liquid such as a cleaning liquid or a rinsing liquid is supplied to the processing fluid supply source 70 of each processing unit 16 according to the processing performed on the wafer W by the processing unit 16. In the following description, the processing liquid supply unit 71 that supplies the rinsing liquid to the processing fluid supply source 70 of each processing unit 16 will be described.

  The processing liquid supply unit 71 supplies the processing liquid simultaneously to one or a plurality of processing units 16 that process the wafer W. As the treatment liquid, a rinsing liquid in which carbon dioxide gas (gas) is dissolved in pure water (fluid) at a predetermined concentration to prevent electrification is used. Therefore, the treatment liquid supply unit 71 is provided with a dissolution module 72 for dissolving carbon dioxide gas in pure water. Carbon dioxide gas and pure water are supplied to the melting module 72.

  Carbon dioxide gas is supplied from the gas supply source 73 to the melting module 72 via the gas supply channel 74. A flow rate regulator 75 and a valve 76 are provided in the middle of the gas supply channel 74.

  The carbon dioxide gas that has passed through the melting module 72 is discharged to the discharge channel 77. A valve 78 is provided in the middle of the discharge channel 77. The drain 79 discharges carbon dioxide gas or dew condensation water described later to the outside of the apparatus after passing through the discharge channel 77.

  Pure water is provided from the fluid supply source 80 to the dissolution module 72 via the fluid supply channel 81. After that, the processing liquid is supplied to the processing fluid supply source 70 of the processing unit 16 through the processing liquid supply channel 82 on the downstream side of the dissolution module 72. A flow rate regulator 83 is provided in the fluid supply channel 81. A measuring unit 84 for measuring the specific resistance value of pure water in which carbon dioxide gas is dissolved is provided in the middle of the processing liquid supply channel 82. The dissolution module 72 is provided with a detection unit 85 for detecting the amount of condensed water generated in the permeable membrane.

  Thereby, in the treatment liquid supply unit 71, carbon dioxide gas is supplied from the gas supply flow path 74 to the dissolution module 72, and pure water is supplied from the fluid supply flow path 81 to the dissolution module 72. The gas dissolves into carbonated water. Thereafter, the processing liquid is supplied to the processing fluid supply source 70 of the processing unit 16 connected to the processing liquid supply channel 82. The processing liquid is simultaneously supplied to one or a plurality of processing units 16 that process the wafer W.

  The detailed structure of the melting module 72 will be described with reference to FIG. FIG. 4 is a cross-sectional view of the melting module 72, in which a pure water cylinder 401 is provided at the center, and a carbon dioxide gas cylinder 402 is provided so as to surround it.

  A flat and circular upper surface wall 403 and lower surface wall 404 are provided above and below the pure water cylinder 401, respectively. A pure water tank 405 is formed in a space surrounded by the wall surfaces and the pure water cylinder 401, and pure water for dissolving the carbon dioxide gas is temporarily stored. A flat and ring-shaped upper surface wall 406 and lower surface wall 407 are provided above and below the carbon dioxide gas cylinder 402, respectively. A carbon dioxide tank 408 is formed in a space surrounded by these wall surfaces and the pure water cylinder 401 and the carbon dioxide cylinder 402, and carbon dioxide for dissolving in pure water is temporarily stored. The

Since the melting module 72 of the present embodiment is installed along the Z-axis direction in the substrate processing system shown in FIG. 1, the gravity with respect to the fluid inside the melting module 72 acts downward in FIG. To do.
The fluid supply channel 81 and the gas supply channel 74 are connected to the upper surface wall 403 and the upper surface wall 406, respectively. The treatment liquid supply channel 82 and the discharge channel 77 are connected to the lower surface wall 404 and the lower surface wall 407, respectively. Yes.

  In this embodiment, the pure water cylinder 401 is formed of a hydrophobic permeable membrane that allows carbon dioxide gas to pass through the entire surface. A part of the surface of the pure water cylinder 401 may be formed of a permeable membrane.

  The detection unit 85 provided on the wall surface of the carbon dioxide cylinder 402 is connected to the control unit 18 through a cable (not shown). Further, a part of the detection unit 85 is in contact with the carbon dioxide tank 408, and detects the amount of liquid pool that has flowed down to the lower wall 407, as will be described later. As a specific liquid amount detection, for example, there is a method of detecting the upper surface of a liquid pool by a liquid level sensor, and any method such as a float type, an optical type, and a capacitance type may be used.

  Next, the operation of the treatment liquid supply unit 71 and the state of the fluid in the dissolution module 72 in this embodiment will be described. FIG. 5 is a view showing the state of the fluid in the dissolution module 72, and FIG. 6 is a flowchart showing the operation of the processing liquid supply unit 71 until the substrate processing is started and ended by the plurality of processing units 16. is there. Each step of the flowchart of FIG. 6 is achieved by the control unit 18 controlling the operation of each unit disclosed as the substrate processing system.

  First, the control unit 18 reads the recipe information stored in the storage unit 19, adjusts the flow rate regulator 83 and the flow rate regulator 75 based on the flow rate setting described in the recipe information, and opens the valve 76. Then, carbon dioxide supply and pure water supply are started (step S601). As a result, carbon dioxide gas starts to be supplied from the gas supply channel 74 to the melting module 72, and pure water starts to be supplied from the fluid supply channel 81 to the melting module 72. Then, in the dissolution module 72, carbon dioxide gas is dissolved in pure water to become carbonated water as a treatment liquid, and this treatment liquid is supplied to the treatment fluid supply source 70 of the treatment unit 16 connected to the treatment liquid supply channel 82. . At this time, the valve 78 is closed so that the carbon dioxide gas is not discharged from the melting module 72 to the discharge channel 77. Therefore, the control unit 18 adjusts the flow rate of the flow rate regulator 75 so as to be supplied to the melting module 72 at a predetermined pressure by an amount necessary for dissolving the carbon dioxide gas.

  When the processing liquid having a desired flow rate and specific resistance value is supplied, the control unit 18 refers to the information regarding the supply time in the recipe and determines whether or not to continue the processing in the processing unit 16. (Step S602). If the set supply time has not yet elapsed and it is determined that the supply needs to be continued, the process proceeds to step S603 and the supply of carbon dioxide and pure water is continued. On the other hand, if the preset supply time has elapsed, the process proceeds to step S608 to stop the supply of carbon dioxide gas and pure water.

  FIG. 5A shows the state of the fluid in the dissolution module 72 when the pure water supply and the carbon dioxide gas supply are continued in step S603. 5A, the carbon dioxide gas supplied from the gas supply channel 74 is filled in the carbon dioxide gas tank 408 in a state having a predetermined pressure. The filled carbon dioxide gas penetrates into the pure water tank 405 through the hydrophobic permeable membrane on the surface of the pure water cylinder 401. In the pure water tank 405, pure water flows in from the fluid supply flow path 81, is temporarily stored at a predetermined pressure, then flows out from below, and is continuously flowing. Carbon dioxide gas that has permeated through the permeable membrane is dissolved in pure water temporarily stored. The pure water in which the carbon dioxide gas is dissolved flows out to the processing liquid supply channel 82 as a processing liquid. 5A, the carbon dioxide gas does not flow out to the discharge channel 77, and there is no substance that reacts with the detection unit 85.

  When the time corresponding to the predetermined detection cycle elapses, the control unit 18 determines whether a predetermined amount of condensed water is detected in the carbon dioxide gas tank 408 (step S604). As soon as the process is started, the state of FIG. 5A is maintained in the processing module 72, so the control unit 18 determines “NO” in step S604, and returns to step S602. The supply of carbon dioxide and pure water is continued according to the recipe information. In the meantime, in the processing unit 16, the liquid processing using the generated processing liquid is continued. At this time, the supply amount of the carbon dioxide gas may be finely adjusted following the change in the measured value of the specific resistance value in the measuring unit 84.

  When steps S602 to S604 are repeatedly executed and the liquid processing in the processing unit 16 is continued, a change appears in the processing module 72, and a state as shown in FIG. In FIG. 5 (b), a large amount of condensed water A adheres to the surface of the pure water cylinder 401. This occurs for the following reasons. That is, in the pure water tank 405, a part of the pure water that is stored and passed exists in the state of water vapor, and the water vapor can penetrate into the hydrophobic permeable membrane. The invaded water vapor reaches the outer surface of the permeable membrane of the pure water cylinder 401, and a part thereof becomes condensed water A on the surface of the permeable membrane. Condensed water A on the surface remains attached to the surface in the case of a small amount, but when a certain amount is generated, it flows down the surface of the pure water cylinder 401 due to gravity and reaches the lower surface wall 407 to form a liquid pool B. It becomes. The portion of the permeable membrane covered with the liquid reservoir B cannot permeate carbon dioxide from the outside. Therefore, the dissolution of carbon dioxide in pure water is hindered, and the treatment water having a desired specific resistance value cannot be supplied to the treatment unit 16 as the amount of the liquid reservoir B increases.

  In the present embodiment, in the present embodiment of the pure water cylinder 401, the detection unit 85 measures the amount of condensed water that has become the liquid pool B, and notifies the control unit 18 of the measured amount. The control unit 18 determines whether or not the received measurement amount is equal to or larger than a predetermined amount, and if it is equal to or larger than the predetermined amount (step S604: YES), the process proceeds to step S605.

  In step S <b> 605, the control unit 18 causes the processing module 72 to discharge carbon dioxide gas and condensed water. Specifically, the valve 78 that has been closed is opened, and the liquid reservoir B is first discharged from the processing module 72 to the discharge channel 77 as shown in FIG. The condensed water in the discharged liquid reservoir B passes through the discharge channel 77 and is discharged from the drain 79 to the outside of the apparatus. The controller 18 keeps the valve 78 open even when the liquid reservoir B is discharged, and generates a carbon dioxide gas flow in the carbon dioxide tank 408. As a result, the carbon dioxide gas that has changed into the state of FIG. In this state, the dew condensation water A attached to the pure water cylinder 401 is vaporized to become water vapor, and is discharged into the discharge passage 77 as a gas together with carbon dioxide. Alternatively, it is pushed by the airflow against the lower wall 407 and flows down to be discharged into the discharge channel 77 as a liquid. In addition, even when the processing module 72 is discharging the carbon dioxide, the control unit 18 controls the flow rate of the flow regulator 75 so that the same amount of carbon dioxide can be dissolved in pure water as when the carbon dioxide is not discharged. You may make it adjust.

  In the present embodiment, the time until the liquid reservoir B is completely discharged, the condensed water A is removed from the pure water cylinder 401, and the normal carbon dioxide gas can be dissolved is obtained in advance by experiments. Then, the control unit 18 determines whether or not the predetermined time has elapsed (step S606), and when it has elapsed, the control unit 18 turns the valve 78 so that the discharge of the carbon dioxide from the carbon dioxide tank 408 is stopped. Close (step S607).

  Thereafter, the process returns to step S602, and if the processing in the processing unit 16 is continued in the recipe information, the carbon dioxide gas supply with the valve 78 shown in FIG. (Step S603).

  The above process is repeated and when all the processes described in the recipe are completed (step 602: NO), the supply of carbon dioxide and pure water is stopped (step S608), and the process is terminated.

  As described above, according to the present embodiment, when carbon dioxide gas is supplied from the gas supply flow path 74 to the melting module 72, depending on the state of condensation generated in the permeable membrane of the pure water cylinder 401, The discharge of carbon dioxide gas or condensed water from the dissolution module 72 was controlled. Thereby, the specific resistance value of the treatment liquid can be appropriately maintained while suppressing the consumption of carbon dioxide gas. Specifically, the detection unit 85 is provided in the melting module 72 and the discharge of the carbon dioxide gas is controlled according to the result of the detection unit 85 detecting the amount of condensed water. Real-time control that directly follows the state is possible. In addition, since the measurement of the dew condensation water is performed by the liquid reservoir B that has flowed down to the lower wall 407 of the dissolution module 72, the sensor structure can be simplified. Further, as specific carbon dioxide gas control, when it is determined from the detection result of the detection unit 85 that a predetermined amount of condensed water is not generated, the carbon dioxide gas is controlled not to be discharged from the dissolution module 72 to the discharge flow path 82. If it is determined from the detection result of the detection unit 85 that a predetermined amount of condensed water is generated, the condensed water is first discharged from the melting module 72 to the discharge channel 82, and then carbon dioxide gas is discharged from the dissolving module 72. It was made to discharge | emit to the discharge flow path 82. FIG. Therefore, the consumption of carbon dioxide gas can be greatly reduced as compared with the conventional configuration in which carbon dioxide gas is always passed. In the present embodiment, pure water supplied from the fluid supply flow path 81 to the processing unit 16 is not used as a configuration in which the pure water supply is bypassed and the carbon dioxide gas is dissolved as shown in Patent Document 1. All were supplied to the dissolution module 72. Thereby, the configuration of the processing liquid supply unit 71 is simplified, and the footprint of the apparatus can be reduced.

(Modification)
In the above embodiment, the supply of carbon dioxide gas is controlled by directly measuring the amount of the liquid reservoir B in step S604, but the present invention is not limited to this.

  For example, the treatment liquid supply unit 71 may estimate the dew condensation state from the measurement result of the measurement unit 84. As already explained, when the amount of the condensed water adhering simply increases, the dissolution of carbon dioxide gas into pure water is further hindered, and the specific resistance value also increases. Therefore, a relationship between the specific resistance value and the amount of condensed water adhering to the permeable membrane is obtained by experiment in advance, and a threshold value is determined. When the specific resistance value reaches the threshold value in step S604, step S605 is performed. It is also possible to proceed to the carbon dioxide gas discharge process.

  There is also a method in which the control unit 18 estimates from recipe information that is actually used. That is, by experiment, it is calculated | required by experiment and it memorize | stores as a threshold value how much the liquid reservoir B increases so that dissolution may be prevented when supplying pure water beforehand, and at the time of the operation | movement start of FIG. The time for reaching the threshold supply amount is obtained using the recipe supply time and supply amount information. In step S604, when that time has elapsed, the process may proceed to the carbon dioxide gas discharge process in step S605. .

  As described above, by performing control using the recipe information of the specific resistance value measurement unit 84 or the control unit 18, it is not necessary to provide the detection unit 85 in the melting module 72, so the apparatus configuration is simpler. And it becomes cheaper. Further, not only as an alternative means of the detection unit 85, but also in combination with the detection unit 85, the determination in step S604 can be performed with higher accuracy.

  As yet another example, the determination in step S604 is performed based on the specific resistance value measured by the measurement unit 84, and the determination to stop the discharge of carbon dioxide gas is performed in step S606 using the detection result of the detection unit 85. good. In this case, in step S606, the control unit controls to proceed to step S607 when there is no liquid amount notified from the detection unit 85. In the above embodiment, as specific carbon dioxide gas control, only the opening and closing of the valve 78 is controlled according to whether or not a predetermined amount of condensed water has been determined from the detection result of the detection unit 85. did. The present invention is not limited to this control, and performs finer control such as changing the amount of carbon dioxide supplied by the flow rate regulator 75 according to the amount of water detected by the detector 85. It may be.

  In any of the determinations in step S604 described above, the amount of the liquid pool B is measured or estimated. For example, the temperature condition in the dissolution module 72 is monitored, and according to the result, You may make it control the discharge | emission amount of gas. For example, a temperature sensor is provided in each of the pure water tank 405 and the carbon dioxide tank 408. If the temperature of the carbon dioxide tank 408 is higher than the temperature of the pure water tank 405 by a predetermined value or more, the dew condensation water A is likely to be generated. In that case, in step S605, the atmosphere in the carbon dioxide tank 408 can be changed by discharging a relatively small amount of carbon dioxide for a predetermined time, and the generation of condensed water A can be prevented in advance. Here, the discharge time is not limited to the time at which the atmosphere change is achieved. For example, the longer the discharge time is, the more effective the temperature of the carbon dioxide gas tank 408 is lowered. Therefore, the time may be set so that the temperature of the carbon dioxide gas tank 408 is lowered by a predetermined temperature.

  In the above embodiment, the case where carbon dioxide gas is dissolved in pure water has been described. However, the present invention can be applied to a combination of a liquid other than pure water and a gas that can be dissolved therein.

16 treatment unit 72 dissolution module 74 gas supply channel 77 discharge channel 81 fluid supply channel 82 treatment liquid supply channel 85 detector

Claims (5)

A substrate processing system for processing a substrate using a processing liquid in which a gas is dissolved in a fluid,
A processing unit for processing the substrate;
A fluid supply channel for supplying the fluid to the processing unit;
A dissolution module provided in the middle of the fluid supply flow path, and having a permeable membrane for dissolving the gas in the fluid;
A gas supply channel for supplying the gas to the dissolution module;
A discharge flow path for discharging the gas that has passed through the dissolution module;
A control unit for controlling the discharge of the gas or the dew condensation water from the dissolution module to the discharge channel according to the state of the dew condensation generated in the permeable membrane of the dissolution module;
A measuring unit that is provided closer to the processing unit than the dissolution module of the fluid supply channel, and measures a specific resistance value of the fluid;
With
The control unit, according to a result of comparing a specific resistance value threshold value determined in advance from the relationship between the specific resistance value and the amount of condensed water and the specific resistance value of the fluid measured by the measurement unit, A substrate processing system for controlling discharge of the condensed water from a melting module to the discharge channel.   The substrate processing system according to claim 1, wherein all of the fluid supplied to the processing unit from the fluid supply channel is supplied to the dissolution module.   The substrate processing system according to claim 1, wherein the fluid is pure water, and the gas is carbon dioxide gas. A control method for a substrate processing system comprising a processing unit for processing a substrate and processing a substrate using a processing liquid in which a gas is dissolved in a fluid,
When supplying gas from a gas supply channel to a dissolution module provided in the middle of a fluid supply channel for supplying the fluid to the processing unit and having a permeable membrane for dissolving the gas in the fluid, The specific resistance value of the fluid is measured by the measurement unit provided on the processing unit side of the dissolution module of the fluid supply channel, and the ratio determined in advance from the relationship between the specific resistance value and the amount of condensed water. Substrate processing characterized by controlling discharge of the condensed water from the dissolution module to a discharge channel according to a result of comparing a threshold value of resistance value and a specific resistance value of the fluid measured by the measurement unit. How to control the system. The storage medium which memorize | stored the program for performing the control method of the substrate processing system of Claim 4.

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