JP6410586B2 - Test equipment - Google Patents

Description

  The present invention relates to a test apparatus for testing a semiconductor device in a state where the temperature is raised to a desired temperature.

  Conventionally, various test apparatuses for testing a semiconductor device in a state where the temperature is raised to a desired test temperature have been proposed (Patent Documents 1, 2, etc.). In such a test apparatus, the temperature of the plate is raised to a desired temperature by a heater attached to the plate, and the heated plate is brought into contact with the front and back surfaces of the semiconductor device to be tested. Is raised to the desired temperature. Instead, the temperature is increased by putting a semiconductor device in a thermostatic chamber.

  However, these conventional test apparatuses have a relatively large part to be heated, so that heat radiation is large. Therefore, it is necessary to reduce the heat radiation by arranging a heat insulating material around the part to be heated. There is a problem that the configuration becomes large and complicated.

  Also, in such a test, it is necessary to connect each terminal of the semiconductor device to be tested to the measurement circuit. With conventional test equipment, the cable used for this connection becomes longer due to the provision of heat insulating material, etc. As a result, there is also a problem that semiconductor devices cannot be measured with high accuracy.

JP 2012-185016 A JP 2014-105996 A

  The present invention has been made in consideration of the above points. A test apparatus capable of measuring a semiconductor device with high accuracy in a state where the temperature has been raised to a desired temperature with a smaller and simpler configuration than conventional ones. It is what we are going to propose.

In order to solve the problem, in the invention of claim 1,
In a test apparatus for testing the semiconductor device by raising the temperature of the semiconductor device,
A mounting section for mounting the semiconductor device;
A heat source unit for heating the semiconductor device;
A movable portion that moves and contacts the upper end surface of the semiconductor device placed on the placement portion, and raises the temperature of the semiconductor device;
The heat source part is
Comprising a halogen lamp, emitting infrared rays from the halogen lamp to the movable part;
The movable part is
A heat conduction plate that contacts the upper end surface of the semiconductor device placed on the placement portion, raises the temperature by infrared rays from the heat source portion, and heats the semiconductor device by heat conduction,
A condensing dome that reflects infrared rays from the heat source unit and collects the infrared rays on the heat conducting plate is provided.

  According to the configuration of claim 1, only the heat conductive plate is heated by infrared rays from one surface side of the heat conductive plate, and the other surface of the heat conductive plate is brought into contact with the semiconductor device to raise the temperature of the semiconductor device. Can do. Thereby, the structure used for temperature rise can be reduced in size, the structure related to heat insulation can be simplified, and the structure can be reduced in size and simplified. In addition, since the measurement circuit used for testing the semiconductor device can be arranged close to the semiconductor device, the semiconductor device can be measured with high accuracy.

In the invention of claim 2, in the structure of claim 1,
The heat conducting plate is a black plate material made of silicon nitride.

  According to the configuration of the second aspect, the temperature can be efficiently increased by infrared rays and further heat conduction can be performed. In addition, since it is an insulator, it can be tested without any inconvenience even when, for example, an electrode is exposed on the upper end surface of the semiconductor device.

In invention of Claim 3, in the structure of Claim 1 or Claim 2,
A temperature sensor for detecting the temperature of the heat conducting plate; and a temperature sensor for detecting the temperature of the back surface of the semiconductor device.

  According to the configuration of the third aspect, the halogen lamp can be managed by the temperature sensor that detects the temperature of the heat conducting plate, and the temperature rise of the semiconductor device is monitored by the temperature sensor that detects the temperature of the back surface of the semiconductor device. Therefore, it is possible to appropriately monitor for abnormalities by monitoring the test status.

  ADVANTAGE OF THE INVENTION According to this invention, the test device which can measure a semiconductor device accurately can be provided in the state heated up to desired temperature by the small-sized and simple structure compared with the past.

1 is a diagram illustrating a test apparatus according to a first embodiment of the present invention. It is a figure which shows the state which moved the movable part in the test apparatus of FIG. It is sectional drawing which shows the detailed structure of the test apparatus of FIG. It is a flowchart with which it uses for description of operation | movement of the testing apparatus of FIG.

  Hereinafter, embodiments of the present invention will be described in detail.

[First Embodiment]
FIG. 1 is a view showing a test apparatus according to a first embodiment of the present invention, and is a view partially showing a cross section. The test apparatus 1 is a test apparatus that measures various static characteristics and dynamic characteristics in a state where a semiconductor device housed in a package to be tested is heated to a desired temperature.

  For this reason, the test apparatus 1 is provided with a mounting unit 3 for setting the semiconductor device 2 to be tested, and the semiconductor device 2 is set on the mounting unit 3 by a transport mechanism (not shown). The semiconductor device 2 set in the placement unit 3 is carried out by the transport mechanism.

  Here, the mounting unit 3 holds a mounting table 5 on which the semiconductor device 2 is mounted by a retractable coil spring 4, and the semiconductor device 2 is mounted on the mounting table 5 and the semiconductor device 2 is set. As shown in FIG. 2 in comparison with FIG. 1, when the semiconductor device 2 is pressed from above (indicated by an arrow A), the coil spring 4 contracts and the semiconductor device 2 is held so as to sink together with the mounting table 5. When the semiconductor device 2 sinks by pressing from above, the mounting portion 3 contacts each terminal of the semiconductor device 2 and the contact pin 6, and each terminal and the contact pin 6 are electrically connected. Is done. In the test apparatus 1, each contact pin 6 is connected to a measurement circuit 7. For the contact pin 6 associated with a large terminal, an auxiliary terminal 8 made of an elastic member that receives pressure from above the semiconductor device is provided. The placement unit 3 is embedded with an infrared temperature sensor S1 from the back side of the placement table 5, and is configured so that the temperature of the semiconductor device 2 can be measured by the infrared temperature sensor S1.

  The mounting portion 3 holds the mounting table 5 in a replaceable manner, and the contact pins 6 and the auxiliary terminals 8 are held in a replaceable manner together with a plate-like member 9 holding the contact pins 6, thereby being a test object. These are exchanged according to the semiconductor device 2 so that various semiconductor devices 2 can be tested.

  In the test apparatus 1, a movable part 10 is provided above the placement part 3. Here, the movable portion 10 is held by the movable mechanism 11 so as to be movable in the vertical direction, abuts against the upper end surface of the package of the semiconductor device 2, presses the semiconductor device 2 from above, and raises the temperature of the semiconductor device 2. . Further, the movable part 10 is provided with a contact presser 12 for pressing each terminal of the semiconductor device 2 against the contact pin 6. Thereby, in the test apparatus 1, by setting the semiconductor device 2 on the mounting portion 3, the movable portion 10 is moved downward to press the semiconductor device 2 from above, and each terminal of the semiconductor device 2 is connected to the measurement circuit. At the same time, the temperature of the semiconductor device 2 is increased. Further, when the test is completed by raising the temperature of the semiconductor device 2 in this way, the movable part 10 is moved upward to stop the pressing and temperature rise of the semiconductor device 2 so that the semiconductor device 2 can be carried out.

  In the test apparatus 1, a heat source unit 15 provided for raising the temperature of the semiconductor device 2 is provided on the movable unit 10.

  FIGS. 3A and 3B are a front view and a side view showing a detailed configuration of the movable unit 10 and the heat source unit 15 by partially taking a cross section. The heat source unit 15 is provided with a heat sink 21 at the top, and further a cooling fan 22 is provided on the heat sink 21, and the temperature increase of the heat source unit 15 is suppressed by the heat sink 21 and the cooling fan 22. .

  The heat source unit 15 is provided with a halogen lamp 23 below the heat sink 21, and raises the temperature of the semiconductor device 2 through the movable unit 10 by infrared rays from the halogen lamp 23. Here, in this embodiment, the heat source unit 15 includes straight-tube halogen lamps 23 arranged in parallel, and each halogen lamp 23 is provided with a reflector 24. Here, the reflector 24 is formed by a parabolic mirror that radiates infrared rays toward the movable portion 10, and the halogen lamp 23 is disposed at the focal point of the paraboloid. Thereby, the heat source unit 15 is configured to emit infrared rays toward the movable unit 10 by substantially parallel light rays. Further, the halogen lamps 23 are arranged in parallel, so that infrared rays can be irradiated over a wide range. In FIG. 3, this infrared ray is indicated by an arrow. Thus, by radiating infrared rays with substantially parallel rays, even if the movable portion 10 is moved with respect to the fixed heat source portion 15, the distribution of infrared rays incident on the heat conduction plate 32 described later does not change. As a result, the test apparatus 1 is configured so that the semiconductor device can be tested stably.

  The heat source unit 15 can irradiate infrared rays to a region larger than the semiconductor device 2 in a plan view (when viewed from above), and can increase the temperature of the semiconductor device 2 to an intended temperature. The rating, size, and number arranged in parallel are selected.

  The heat source unit 15 is housed and covered with a related configuration of the halogen lamp 23 and the reflector 24 by a case 25 having an opening on the side that emits infrared rays, thereby preventing leakage of infrared rays and improving thermal efficiency. Prevents unexpected temperature rise due to infrared leakage. The test apparatus 1 is further provided with a heat sink 21 above the case 25.

  The movable portion 10 is provided with a condensing dome 31 so as to cover the case 25 from below, and a heat conducting plate 32 is provided on a lower surface side of the condensing dome 31 and a portion facing the semiconductor device 2. Here, the heat conduction plate 32 is disposed so as to be directly irradiated by infrared rays from the heat source unit 15 and is heated by the infrared rays. Further, the movable part 10 is moved downward to come into contact with the upper end surface of the semiconductor device, and the temperature of the semiconductor device 2 is increased by heat conduction.

  For this reason, the heat conduction plate 32 is a material that can efficiently rise in temperature by irradiation with infrared rays and efficiently conduct heat to the semiconductor device 2 and is made of an insulator. Specifically, the heat conduction plate 32 is formed of a black ceramic, more specifically, a plate-like member made of black silicon nitride. Further, the heat conduction plate 32 is manufactured with a shape and size corresponding to the shape and size of the upper end surface of the semiconductor device 2. Thus, the test apparatus 1 is configured to reduce the loss related to the heat conduction from the heat conduction plate 32 as much as possible and to efficiently raise the temperature of the semiconductor device 2.

  The heat conduction plate 32 is made of an insulator. That is, some semiconductor devices 2 have electrodes exposed on the upper end face of the package for heat dissipation. If such a semiconductor device 2 is brought into contact with a heat conducting plate made of a conductive member made of metal or the like, the semiconductor device is damaged or the semiconductor device cannot be correctly tested. Thus, the test apparatus 1 is configured so that various semiconductor devices can be tested safely and reliably. When the test apparatus 1 is configured so as to test only a semiconductor device in which such an electrode is not exposed, a metal material having a high thermal conductivity such as aluminum can be applied to the heat conduction plate 32, for example. it can.

  The condensing dome 31 is configured to reflect infrared rays from the heat source unit 15 and collect it on the heat conducting plate. In this embodiment, the heat source unit 15 prevents leakage of infrared rays and is movable in the vertical direction. The side surface is formed by a cylindrical shape along the side surface of the case 25 provided in the case. In addition, the condensing dome 31 has an inner wall surface formed of a glossy surface so that infrared rays from the heat source unit 15 can be efficiently reflected, and a heat source plate 32 is held in an opening formed in the center of the lower end surface. The infrared rays from the part 15 are configured to be directly incident on the back side of the heat conducting plate 32. Further, the portion surrounding the heat conducting plate 32 is formed by an inclined surface that falls down toward the heat conducting plate 32, thereby reflecting the infrared rays that are not directly incident on the heat conducting plate 32 and entering the heat conducting plate 32. Is done. As a result, the test apparatus 1 is configured to efficiently raise the temperature of the heat conducting plate 32 using infrared rays from the heat source unit 15.

  Thus, when the temperature of the heat conducting plate 32 is increased by the halogen lamp from the back surface side of the heat conducting plate 32 and the surface side of the heat conducting plate 32 is brought into contact with the semiconductor device 2, the temperature of the semiconductor device is raised by heat conduction. In this case, simply by providing a heat dissipation structure in the heat source section 15 provided with a halogen lamp, the structure related to heat insulation can be simplified and further omitted, thereby simplifying and downsizing the entire structure. be able to.

  In addition, the measurement circuit 7 can be arranged close to the semiconductor device 2, thereby testing the semiconductor device with high accuracy.

  Further, the movable part 10 is configured such that a temperature sensor S2 by a thermocouple is provided on the heat conducting plate 32, and the temperature rise of the heat conducting plate 32 can be monitored by the controller 16 by this temperature sensor S2. That is, the halogen lamp, which is a heat source, gradually deteriorates in characteristics due to use and reaches the end of its life. In this case, the efficiency of emitting infrared rays gradually deteriorates. Therefore, in this embodiment, the operation of the halogen lamp can be monitored by monitoring the temperature of the heat conducting plate 32 that is heated by direct infrared radiation, and can be used as a guide for replacing the halogen lamp.

  Thus, in the test apparatus 1, only the movable part 10 is movable, and only the temperature sensor S2 for temperature monitoring is provided in the movable part 10 with a cable for connection to the outside. The connected heat source unit 15 and mounting unit 3 are held so as not to move. Thereby, in the test apparatus 1, the malfunction of the apparatus by the cutting of a cable etc. can be reduced.

  In this embodiment, the test apparatus 1 is configured so that the condensing dome 31 and the heat conduction plate 32 can be exchanged, so that the semiconductor device 2 can be efficiently heated by exchanging them according to the semiconductor device 2. Composed.

  In the test apparatus 1 (FIG. 1), the measurement circuit 7 includes various circuits for testing the semiconductor device 2, measures various characteristics of the semiconductor device 2 under the control of the controller 16, and outputs the measurement results to the controller 16. To do.

  The movable mechanism 11 is configured by an actuator or the like that moves the movable part 10 in the vertical direction, and moves the movable part 10 up and down under the control of the controller 16. The drive circuit 34 drives the halogen lamp 23 and the fan 22 under the control of the controller 16.

  The controller 16 is a computer that controls the overall operation of the test apparatus 1, and controls the operation of each unit under the control of the host controller.

  FIG. 4 is a flowchart showing the processing procedure of the controller 16. When the semiconductor device 2 is transported from the previous process and the start of the test is instructed from the host controller, the controller 16 moves from step SP1 to step SP2, and is driven to the mounting table 5 of the mounting unit 3 by driving the transport mechanism. The semiconductor device 2 is placed, and thereby the semiconductor device 2 is carried into the test apparatus 1.

  Subsequently, in step SP3, the controller 16 moves the movable part 10 downward under the control of the movable mechanism 11, presses the heat conducting plate 32 against the semiconductor device 2 from above, and thereby presses the contact via the contact pin 6. Each terminal of the semiconductor device 2 is connected to the measurement circuit 7. Subsequently, the operation of the drive circuit 34 is controlled to light the halogen lamp 23 in a rated state. Here, the rating is driven by an AC 100V power source. As a result, in the test apparatus 1, infrared rays are emitted from the halogen lamp 23, and the infrared rays are directly incident on the heat conduction plate 32, reflected by the condensing dome 31 and incident on the heat conduction plate 32. Raise the temperature. Further, the temperature of the semiconductor device 2 formed by contacting (adhering) the heat conduction plate is increased by heat conduction from the heat conduction plate 32.

  Thus, when the temperature of the semiconductor device 2 is started and the semiconductor device 2 rises to a predetermined temperature (for example, 250 degrees) as monitored by the temperature sensor S1, the controller 16 causes the measurement circuit 7 to Measurement items set in advance by control are measured to obtain measurement results. When the measurement is completed, in step SP6, the driving of the halogen lamp 23 is stopped by the control of the driving circuit 34, and the infrared rays emitted from the halogen lamp 23 are reduced. Here, in this embodiment, the voltage applied to the halogen lamp 23 is reduced from AC 100V to AC 50V to reduce infrared emission.

  Subsequently, the controller 16 moves the movable part 10 upward by the control of the movable mechanism 11 and retracts it. In the subsequent step SP8, the controller 16 drives the carry-out mechanism to carry out the semiconductor device 2 from the mounting table 5.

  Through this series of processing, the controller 16 tests and carries out one semiconductor device, and in the subsequent step SP9, judges whether or not all the semiconductor devices have been tested, and if a negative result is obtained, From SP9, the process returns to step SP2, and the test of the subsequent semiconductor device is started. In this case, the test apparatus 1 can reduce the number of times the halogen lamp 23 is repeatedly turned on and off by reducing the drive voltage and continuing to drive the halogen lamp 23. The life of the lamp can be extended.

  On the other hand, if a negative result is obtained in step SP9, the controller 16 proceeds from step SP9 to step SP10, turns off the halogen lamp 23 under the control of the drive circuit 34, and then proceeds to step SP11 to end this processing procedure. To do.

  In addition to controlling the operation of each unit, the controller 16 monitors the temperature of the semiconductor device 2 with the temperature sensor S1 and / or monitors the temperature of the heat conduction plate with the temperature sensor S2. Thus, the voltage applied to the halogen lamp 23 is varied by this control, whereby the temperature of the semiconductor device 2 is maintained at a desired temperature.

  In the driving of the halogen lamp 23, for example, the driving is started with the applied voltage of 120% of the rated voltage, and then the driving is performed with the rated voltage. For example, various driving methods can be widely applied.

  According to this embodiment, the temperature of the heat conduction plate is increased by the halogen lamp, and the temperature of the semiconductor device is increased by the heat conduction from the heat conduction plate. The semiconductor device can be accurately measured in a state where the temperature is raised to the above temperature.

  Further, since the heat conducting plate is a black plate material made of silicon nitride, the temperature of the semiconductor device can be increased efficiently, and even a semiconductor device with an exposed electrode can be measured safely.

  Further, by providing a temperature sensor S2 for detecting the temperature of the heat conducting plate and a temperature sensor S1 for detecting the temperature of the back surface of the semiconductor device 2, the temperature of the semiconductor device 2 is monitored and further tested, and further, a halogen lamp is installed. It can be managed appropriately.

[Other Embodiments]
As mentioned above, although the specific structure suitable for implementation of this invention was explained in full detail, this invention can change the structure of the above-mentioned embodiment variously in the range which does not deviate from the meaning of this invention.

  That is, in the above-described embodiment, the case where the movable part is moved up and down has been described. However, the present invention is not limited to this, and the movable part may be moved sideways to carry in and carry out the semiconductor device.

  In the above-described embodiment, the case where the driving of the halogen lamp is reduced to 50% of the rating at the end of the test of one semiconductor device has been described. Alternatively, the halogen lamp may be continuously driven according to the rating.

  In the above-described embodiment, the case of using a straight tube type halogen lamp has been described. However, the present invention is not limited to this, and halogen lamps having various shapes such as a bulb shape and a ring shape can be widely applied. .

DESCRIPTION OF SYMBOLS 1 Test apparatus 2 Semiconductor device 3 Mounting part 4 Coil spring 5 Mounting base 6 Contact pin 7 Measuring circuit 8 Auxiliary terminal 9 Plate-shaped member 10 Movable part
DESCRIPTION OF SYMBOLS 11 Movable mechanism 12 Contact holder 15 Heat source part 16 Controller 21 Heat sink 22 Fan 23 Halogen lamp 24 Reflector 25 Case 31 Condensing dome 32 Thermal conduction plate 34 Drive circuit S1, S2 Temperature sensor

Claims (3)

In a test apparatus for testing the semiconductor device by raising the temperature of the semiconductor device,
A mounting section for mounting the semiconductor device;
A heat source unit for heating the semiconductor device;
A movable portion that moves and contacts the upper end surface of the semiconductor device placed on the placement portion, and raises the temperature of the semiconductor device;
The heat source part is
Comprising a halogen lamp, emitting infrared rays from the halogen lamp to the movable part;
The movable part is
A heat conduction plate that contacts the upper end surface of the semiconductor device placed on the placement portion, raises the temperature by infrared rays from the heat source portion, and heats the semiconductor device by heat conduction,
A testing apparatus comprising: a condensing dome that reflects infrared rays from the heat source unit and collects the infrared rays on the heat conducting plate. The test apparatus according to claim 1, wherein the heat conductive plate is a black plate material made of silicon nitride. The test apparatus according to claim 1, further comprising: a temperature sensor that detects a temperature of the heat conduction plate; and a temperature sensor that detects a temperature of a back surface of the semiconductor device.

Images