JP6413396B2 - Power converter and electric motor - Google Patents

Description

  The present invention relates to a power conversion device and an electric motor, and more particularly to a technology effective when applied to a power conversion device having a semiconductor device and a capacitor component constituting an inverter circuit and an electric motor including the same.

  A PWM (Pulse Width Modulation) inverter is used to control an electric motor that needs to be accelerated and decelerated in accordance with recent energy saving requirements. The PWM inverter uses a semiconductor switching element such as an IGBT (insulated gate bipolar transistor) made of silicon (Si) or a MOSFET (metal oxide semiconductor field effect transistor) according to the ON / OFF digital signal sent from the control unit. PWM control is performed by flowing the motor windings. By performing PWM control using a semiconductor switching element, it becomes possible to control acceleration / deceleration of the motor with higher efficiency than resistance control or the like. However, the semiconductor switching element still generates heat due to conduction loss during energization and switching loss that occurs during ON and OFF transitions. Therefore, an air cooling device or a water cooling device is attached to the inverter device so that the semiconductor switching element does not become high temperature due to heat generation. The cooling device occupies a large proportion of the volume of the inverter, and the cooling design is important for downsizing the inverter device.

  On the other hand, in-vehicle electric motors such as power steering assist motors and compressors for in-vehicle air conditioners, inverter-integrated motors incorporating an inverter circuit in the motor are becoming mainstream in order to save space. In order to save space, that is, to reduce the size, cooling design of the semiconductor element used in the above-described inverter circuit becomes an issue. In addition, with the miniaturization, it is important to arrange the parts of the inverter circuit in a narrow motor housing and the assembly method. In Japanese Patent Laid-Open No. 2007-306671, a device for assembling and cooling a semiconductor element used for an inverter integrated motor is devised.

  By the way, in recent years, wide band gap semiconductors typified by silicon carbide (SiC) semiconductors with low loss have begun to be used. In conventional inverter circuits for motor drives that output an alternating current of 200 V or more, bipolar devices such as Si IGBTs have been used. In SiC semiconductors, which are next-generation power semiconductors, it is possible to use unipolar devices such as MOSFETs that can be switched at higher speeds, and switching loss can be greatly reduced. Therefore, SiC semiconductors are applied to inverter integrated motors. Then, it becomes possible to reduce the size of the cooling device for the inverter unit.

  However, when the high-speed switching is performed and the current cut-off slope becomes fast (high di / dt), the surge voltage generated by the inductance of the circuit of the current path from the plus electrode to the minus electrode becomes large at the time of turn-off. There's a problem. In Japanese Patent Laid-Open No. 2007-116840, a device is devised in which semiconductor elements are arranged in a circumferential shape so that the distance from the plus electrode to the minus electrode on the printed circuit board is minimized to reduce the circuit inductance.

However, in Japanese Patent Application Laid-Open No. 2007-116840, the printed wiring board on which the semiconductor element is mounted is devised to have low inductance, but the printed wiring board is directly connected to the smoothing capacitor. Many smoothing capacitors are large, and the parasitic inductance of the smoothing capacitor may be several tens of nH. In addition, if the smoothing capacitor is large, the bus bar also becomes large, so that the parasitic inductance is still on the order of several tens of nH even if the inductance is reduced along with the plus and minus electrodes. If the inductance of one circuit is 50 nH and the surge voltage can be allowed up to 300 V, the allowable current change rate is 6 × 10 ⁻⁹ A / sec. In this case, the switching speed is not much different from the current Si IGBT, and the switching speed cannot be significantly reduced.
Therefore, the present inventor made the present invention paying attention to the arrangement of the semiconductor device (switching element) constituting the inverter circuit and the capacitor component.

JP 2007-306671 A JP 2007-116840 A

  An object of the present invention is to provide a technique capable of reducing the inductance of a power converter.

  In order to achieve the above object, a power converter according to an aspect of the present invention is applied with a first main power supply line to which a first reference voltage is applied, and a second reference voltage having a lower potential than the first reference voltage. A wiring board having a second main power supply wiring, and first and second semiconductor devices and capacitor parts constituting an inverter circuit, each of the first and second semiconductor devices including a control terminal, A second main terminal; and a switching element that turns on / off electrical connection between the first and second main terminals by a control signal input to the control terminal. The capacitor component includes a first main power supply wiring and a second main power line. The second main terminal of the first semiconductor device is connected between the first main power supply wiring and the capacitor component, and the first main terminal of the second semiconductor device is connected to the second main terminal. Connected between the power supply wiring and the capacitor component, The second semiconductor device is mounted on the wiring board so as to face each other, the capacitor component is mounted in the region between the first and second semiconductor devices of the wiring board.

  According to the present invention, it is possible to reduce the inductance of the power conversion device.

It is a perspective view showing a schematic structure of an electric motor provided with a power converter concerning a 1st embodiment of the present invention. FIG. 3 is an exploded perspective view of the electric motor of FIG. 2. It is a perspective view showing a schematic structure of a power converter concerning a 1st embodiment of the present invention. It is a perspective view which shows the state which removed the wiring board in FIG. It is an equivalent circuit schematic of the power converter device of FIG. FIG. 4 is an arrangement diagram showing an arrangement state of a semiconductor device and a capacitor component mounted on a wiring board in the power conversion device of FIG. 3. It is principal part sectional drawing which shows the cross-section along the II-II line | wire of FIG. It is principal part sectional drawing to which a part of FIG. 7 was expanded. 3A and 3B are diagrams showing a schematic configuration of a semiconductor device used in the power conversion device of FIG. 3 (FIG. 3A is a plan view, FIG. 3B is a sectional view showing a sectional structure taken along line IIIb-IIIb in FIG. ) Is a cross-sectional view showing a cross-sectional structure taken along line IIIc-IIIc in (a), and (d) is a bottom view). It is principal part sectional drawing which shows the modification of the power converter device which concerns on the 1st Embodiment of this invention. It is a perspective view which shows schematic structure of the power converter device which concerns on the 2nd Embodiment of this invention. It is a perspective view which shows the state which removed the wiring board in FIG. It is an equivalent circuit schematic of the power converter device of FIG. 12 is a layout diagram illustrating a layout state of a semiconductor device, a diode component, and a capacitor component mounted on a wiring board in the power conversion device of FIG. It is principal part sectional drawing which shows the cross-section along the IV-IV line of FIG. It is principal part sectional drawing to which a part of FIG. 15 was expanded. 11A and 11B are diagrams showing a schematic configuration of a semiconductor device used in the power conversion device of FIG. 11, where FIG. 11A is a plan view, FIG. 11B is a sectional view showing a sectional structure taken along line VI-VI in FIG. ) Is a bottom view). 11A and 11B are diagrams showing a schematic configuration of a diode component used in the power conversion device of FIG. 11 (FIG. 11A is a plan view, FIG. 11B is a sectional view showing a sectional structure taken along line VII-VII in FIG. ) Is a bottom view). It is principal part sectional drawing which shows the modification of the power converter device which concerns on the 2nd Embodiment of this invention. In the power converter device which concerns on the 3rd Embodiment of this invention, it is an arrangement | positioning figure which shows the arrangement | positioning state of the semiconductor device, diode component, and capacitor component which were mounted in the wiring board. In the power converter device of FIG. 20, it is principal part sectional drawing which shows the cross-section in the position corresponding to the IV-IV line of FIG. It is an equivalent circuit schematic of the power converter device which concerns on the 4th Embodiment of this invention. FIG. 23 is an arrangement diagram illustrating an arrangement state of a semiconductor device, a diode component, and a capacitor component mounted on a wiring board in the power conversion device of FIG. 22. FIG. 23 is a main part sectional view showing a sectional structure at a position corresponding to a line IV-IV in FIG. 11 in the power converter of FIG. 22. The figure which shows schematic structure of the diode component used with the power converter device of FIG. 22 ((a) is a top view, (b) is sectional drawing which shows the cross-section along the VIII-VIII line of (a), (c) ) Is a bottom view). It is an equivalent circuit schematic of the power converter device which concerns on the 5th Embodiment of this invention. FIG. 27 is an arrangement diagram illustrating an arrangement state of a semiconductor device, a diode component, and a capacitor component mounted on a wiring board in the power conversion device of FIG. In the power converter of FIG. 26, it is principal part sectional drawing which shows the cross-section in the position corresponding to the IV-IV line of FIG. The figure which shows schematic structure of the diode component used with the power converter device of FIG. 26 ((a) is a top view, (b) is sectional drawing which shows the cross-section along the IX-IX line of (a), (c) ) Is a bottom view).

Hereinafter, power converters and electric motors including the power converters according to first to fifth embodiments of the present invention will be described with reference to the drawings.
In this specification, the “main terminal” means a terminal which is either an emitter terminal or a collector terminal in the IGBT. In a field effect transistor (FET) or a static induction transistor (SIT), it means a terminal that is either a source terminal or a drain terminal. More specifically, if the “one terminal” is defined as a “first main terminal”, the “other terminal” is a “second main terminal”. That is, the “second main terminal” is a terminal that is either an emitter terminal or a collector terminal that is not the first main terminal in the IGBT, and a source terminal that is not the first main terminal in the FET or SIT. It means a terminal to be one of drain terminals. In the following first to fifth embodiments, description will be made focusing on the IGBT as a switching element, and hence the emitter terminal is referred to as a “first main terminal” and the collector terminal is referred to as a “second main terminal”.

In the following description of the first to fifth embodiments and the accompanying drawings, the same reference numerals are given to the same components, and duplicate descriptions are omitted.
Further, the attached drawings described in the first to fifth embodiments are not drawn with an accurate scale and dimensional ratio for easy understanding and understanding. The present invention is not limited to the description of the first to fifth embodiments described below unless it exceeds the gist.

  In the following first to fifth embodiments, an IGBT will be exemplarily described with a focus on an IGBT as a representative example of a semiconductor device constituting the “power conversion device” of the present invention. In the following first to fifth embodiments, the first and second directions orthogonal to each other in the same plane are referred to as the X direction and the Y direction, and the third direction orthogonal to the X direction and the Y direction is referred to as Z. Called the direction. 6, 14, 20, 23, and 27, the horizontal direction is defined as the X direction and the vertical direction is defined as the Y direction. 7, 8, 10, 15, 15, 16, 19, 21, 24, and 28, the horizontal direction is defined as the Y direction, and the vertical direction is defined as the Z direction.

(First embodiment)
In the first embodiment of the present invention, a case where a semiconductor device in which a switching element and a diode element are built in the same package is used as an electronic component (disk lead component) constituting an inverter circuit will be described.
As shown in FIG.1 and FIG.2, the electric motor 1 is provided with 10 A of power converter devices which concern on the 1st Embodiment of this invention. The electric motor 1 includes a housing 2 and a motor unit (see FIG. 5) 3. The motor unit 3 is housed inside the housing 2 and is not shown in FIGS. 1 and 2.

The housing 2 is configured, for example, in a circular cylindrical shape in which one end side of a body portion made of a circular cylindrical shape is covered with a top plate portion and the other end side opposite to the one end side of the body portion is opened. .
Although not shown in detail, the motor unit 3 includes a rotor core and a stator core. Further, the motor unit 3 has an output shaft (shaft) 4 that is pivotally supported by the housing 2 via two bearings that extend in and out of the housing 2 and that are separated from each other in the axial direction. I have. And the motor part 3 is comprised so that the rotational force obtained by a rotor core and a stator core may be transmitted to the exterior by the output shaft 4. FIG. The motor unit 3 is constituted by, for example, a three-phase brushless motor, and U-phase, V-phase, and W-phase motor windings constituting three phases are wound around slots of the stator.

As shown in FIGS. 1 to 4 and 7, the power conversion device 10 </ b> A according to the first embodiment of the present invention has a base member 20 having a main surface 20 x and a back surface 20 y located on opposite sides in the thickness direction. And a wiring board 50 supported on the main surface 20x side of the base member 20 via four support columns 25. The base member 20 has a circular cylindrical shape as in the case 2.
The base member 20 is provided with a groove 20a (see FIG. 2) along the outer periphery of the base member 20, and a rubber-like O-ring 5 is fitted into the groove 20a. The base member 20 is inserted from the opening side of the housing 2 so that the O-ring 5 on the outer peripheral surface thereof is in contact with the inner peripheral surface on the other end side of the housing 2, and is connected to the housing 2 in series. That is, the base member 20 is configured as a lid member that covers the opening side of the housing 2 of the electric motor 1. The connecting portion between the housing 2 and the base member 20 has a watertight structure due to the O-ring 5. The base member 20 is fixed to the housing 2 by screws from the outside with a screw member 6.

On the back surface 20y side of the base member 20, a plurality of convex fins 20b are provided for efficiently dissipating heat transferred from the semiconductor device described later to the base member 20 to the outside. The base member 20 and the housing 2 are made of a metal material having good electrical conductivity and thermal conductivity, for example, aluminum die cast (ADC).
The wiring board 50 has a main surface 50x and a back surface 50y located on opposite sides in the thickness direction. The wiring board 50 has a planar shape that is circular according to the planar shape of the base member 20, and is formed with a planar size that is smaller than the planar size of the base member 20. The wiring substrate 50 is configured to have a wiring pattern on the front and back surfaces of a base material formed by, for example, impregnating glass fiber with an epoxy resin or the like.

  Each of the four support columns 25 protrudes upward from the main surface 20 x of the base member 20, and one end side is formed integrally with the base member 20. A wiring board 50 is screwed and fixed to the other end side of each of the four columns 25 from the outside by a screw member 27. The wiring board 50 is supported by each of the four support columns 25 so that the main surface 50 x faces the main surface 20 x of the base member 20 and is separated from the base member 20.

As shown in FIG. 5, the power conversion device 10 </ b> A according to the first embodiment of the present invention further includes an inverter circuit 11, a gate drive circuit 13, and a control circuit 14. The inverter circuit 11 includes three power conversion units 12u, 12v, and 12w as legs, a positive line 19P, and a negative line 19N.
The three power conversion units 12u, 12v, and 12w are provided corresponding to the U phase, V phase, and W phase of the motor unit 3, respectively. The power conversion units 12u, 12v, and 12w are configured by connecting first semiconductor devices 30u1, 30v1, and 30w1 as upper arms and second semiconductor devices 30u2, 30v2, and 30w2 as lower arms in series. . Each of the first semiconductor devices 30u1, 30v1, 30w1 and the second semiconductor devices 30u2, 30v2, 30w2 includes a switching element 15 as an IGBT and a diode element 16 reversely connected in parallel to the switching element 15 in the same package. It has the structure which has in.

In the three power conversion units 12u, 12v, and 12w, each one input node unit Nd1 is electrically connected to the positive line 19P, and each other input node unit Nd2 is electrically connected to the negative line 19N. Has been. That is, each of the three power conversion units 12u, 12v, and 12w is connected in parallel between the positive electrode line 19P and the negative electrode line 19N.
The three power conversion units 12u, 12, and 12w have capacitor parts C1, C2, and C3, respectively. Each of the three capacitor parts C1, C2, C3 is connected in parallel between the positive electrode line 19P and the negative electrode line 19N.

The inverter circuit 11 receives the gate signal output from the gate drive circuit 13 to the switching element 15 of each of the three power conversion units 12u, 12v, and 12w, thereby outputting the power conversion units 12u, 12v, and 12w. A U-phase motor drive current, a V-phase motor drive current, and a W-phase motor drive current are supplied to the motor windings of each phase of the motor unit 3 from the node unit Nd3.
The gate drive circuit 13, based on the drive signal inputted from the control circuit 1 4, each of the power conversion unit 12u, 12v, a circuit for turning on and off the switching element 15 of 12w. The gate drive circuit 13 is connected to the gate of the switching element 15.
The control circuit 14 is a circuit that outputs to the gate drive circuit 13 a drive signal for controlling on / off of the switching element 15 of each of the power converters 12u, 12v, 12w based on a command input from the outside. . The control circuit 14 is connected to the gate drive circuit 13.

Next, the first semiconductor devices 30u1 to 30w1 and the second semiconductor devices 30u2 to 30w2 constituting the power conversion units 12u to 12w of the inverter circuit 11 will be described with reference to FIG.
Since the first semiconductor devices 30u1 to 30w1 and the second semiconductor devices 30u2 to 30w2 use products having the same function and the same structure, the first semiconductor device 30u1 will be described as an example, and the other first Description of the semiconductor devices 30v1 and 30w2 and the second semiconductor devices 30u2 to 30w2 is omitted.

  As shown in FIG. 9 ((a), (b), (c), (d)), the first semiconductor device 30u1 includes two semiconductor chips 33, 34, a heat sink 35, and three terminals (first terminals). 1 main terminal (emitter terminal: E) 36a, second main terminal (collector terminal: C) 36b, control terminal (gate terminal: G) 36c), and a sealing body 38 for sealing them. ing. Each of the two semiconductor chips 33 and 34 is mainly composed of a semiconductor substrate made of, for example, single crystal silicon.

  A switching element (IGBT) 15 shown in FIG. 5 is formed on the semiconductor chip 33. The main surface of the semiconductor chip 33 has a main surface electrode 33a electrically connected to the first main electrode region (emitter region) of the switching element 15 and a main surface electrically connected to the gate electrode of the switching element 15. An electrode 33b is formed. In addition, a back surface electrode 33 c electrically connected to the second main electrode region (collector region) of the switching element 15 is formed on the back surface opposite to the main surface of the semiconductor chip 33.

A diode element 16 shown in FIG. 5 is formed in the semiconductor chip 34. A main surface electrode 34 a electrically connected to the anode region of the diode element 16 is formed on the main surface of the semiconductor chip 34. Further, a back surface electrode 34 c electrically connected to the cathode region of the diode element 16 is formed on the back surface opposite to the main surface of the semiconductor chip 34.
The heat radiating plate 35 has an element mounting surface 35 a and a heat radiating surface 35 b located on opposite sides, and the heat radiating surface 35 b is exposed from the sealing body 38.

  Each of the first main terminal (E) 36a, the second main terminal (C) 36b, and the control terminal (G) 36c is formed by, for example, a lead extending over the inside and outside of the sealing body 38, and one end side of each is formed. It is sealed with a sealing body 38. The three terminals (36a, 36b, 36c) and the heat radiating plate 35 are made of, for example, a metal material such as iron, iron-nickel alloy, copper, or copper alloy having good thermal conductivity and electrical conductivity. . The sealing body 38 is formed with a square planar shape, and is formed of, for example, an epoxy-based insulating resin.

  Each of the semiconductor chips 33 and 34 is fixed to the heat radiating plate 35 so that the respective back surface electrodes 33 c and 34 c face the element mounting surface 35 a of the heat radiating plate 35. The back electrodes 33c and 34c of the semiconductor chips 33 and 34 are electrically and mechanically connected to the heat sink 35 with a conductive adhesive such as a solder material interposed therebetween. That is, the first semiconductor device 30 u 1 is configured such that heat generated in the semiconductor chips 33 and 34 due to the operation of the switching element 15 and the diode element 16 is transmitted to the heat radiating plate 35.

  One end side of the first main terminal 36 a is electrically connected to the main surface electrode 33 a of the semiconductor chip 33 and the main surface electrode 34 a of the semiconductor chip 34 through the bonding wires 37 inside the sealing body 38. Yes. Also, one end side of the second main terminal 36b is formed integrally with the heat radiating plate 35 inside the sealing body 38 and is electrically connected thereto. One end side of the control terminal 36 c is electrically connected to the main surface electrode 33 b of the semiconductor chip 33 through the bonding wire 37 inside the sealing body 38. That is, the switching element 15 and the diode element 16 are reversely connected in parallel with each other inside the first semiconductor device 30u1. The heat sink 35 is fixed at the same potential as the second main terminal (C) 36b.

The heat radiating plate 35 is provided with a screw through hole 35c penetrating from the element mounting surface 35a to the heat radiating surface 35b. Further, the sealing body 38 is provided with a screw through hole 38c extending through the screw through hole 35c of the heat radiating plate 35 in the same direction as the screw through hole 35c. The screw through hole 38c of the sealing body 38 is smaller than the screw through hole 35c of the heat radiating plate 35 so that the side wall in the screw through hole 35c of the heat radiating plate 35 is covered with the insulating resin of the sealing body 38. It is formed with an external size. A screw member for screwing and fixing the first semiconductor device 30u1 to a heat conductive plate to be described later is inserted into the screw through hole 38c of the sealing body 38. That is, the first semiconductor device 30u1 and other semiconductor devices (first semiconductor devices 30v1, 30w1, second semiconductor devices 30v2-30w2) are configured as a TO247 type in which insulation of the screw through holes 35c is ensured.
The first semiconductor device 30u1 and the other semiconductor devices (the first semiconductor devices 30v1, 30w1, the second semiconductor devices 30v2 to 30w2) configured as described above are controlled by the control signal input to the control terminal 36c according to the first main terminal ( E) The switching element 15 is configured to turn on / off the electrical connection between 36a and the second main terminal (C) 36b.

Next, the wiring pattern of the wiring board 50 will be described, and the arrangement of the first semiconductor devices 30u1 to 30w1, the second semiconductor devices 30u2 to 30w2, and the capacitor components C1 to C3 will be described with reference to FIGS.
FIG. 6 is a layout view seen through from the back surface 50 y side of the wiring board 50. FIG. 7 exemplarily shows the mounting state of the first semiconductor device 30u1, the second semiconductor device 30u2, and the capacitor component C1 constituting the U-phase power conversion unit 12u, but the V-phase power conversion unit 12v. Electronic components (first and second semiconductor devices 30v1, 30v2, capacitor component C2), and electronic components constituting the W-phase power conversion unit 12w (first and second semiconductor devices 30w1, 30w2, capacitor component C3) Since the mounting state is the same as in the case of the U phase, the sectional view showing the mounting state related to the V phase and the W phase is omitted.

As shown in FIGS. 6 and 7, the first semiconductor devices 30u1, 30v1, 30w1, the second semiconductor devices 30u2, 30v2, 30w2, and the capacitor components C1, C2, C3 are provided for each power converter 12u, 12v, 12w. Are mounted on the main surface 50x side of the wiring board 50.
The wiring board 50 includes a first main power supply wiring 59P to which a first reference voltage (for example, 300V) is applied and a second main power supply to which a second reference voltage (for example, 0V) having a lower potential than the first reference voltage is applied. Wiring 59N. Further, the wiring board 50 corresponds to the number of the power conversion units 12u, 12v, 12w, the first wirings 51u, 51v, 51w, the second wirings 52u, 52v, 52w, and the third wirings 53u, 53v, 53w. And fourth wires 54u, 54v, 54w and fifth wires 55u, 55v, 55w.

The first main power supply wiring 59P and the second main power supply wiring 59N extend along the X direction and are spaced apart from each other in the Y direction. The first main power supply wiring 59P corresponds to the positive electrode line 19P in FIG. 5, and the second main power supply wiring 59N corresponds to the negative electrode line 19N in FIG.
The first wirings 51u, 51v, 51w are connected to the first main power supply wiring 59P at one end side and have electrode pad portions 51up, 51vp, 51wp at the other end side. Further, the first wiring 51u~51w, one end side of the first main supply line 59P and the other end side of the electrode pad portion 51up, 51 v p, the through-hole electrode portion between the 51wp 51u1,51v 1, 51w 1 have. The first wirings 51u to 51w extend from the first main power supply wiring 59P toward the second main power supply wiring 59N.

  The second wirings 52u, 52v, 52w are connected at one end side to the second main power supply wiring 59N and have electrode pad portions 52up, 52vp, 52wp at the other end side. The second wirings 52u to 52w have through-hole electrode portions 52u1, 52v1, 52w1 between the second main power supply wiring 59N on one end side and the electrode pad portions 52up, 52up, 52wp on the other end side. . The second wirings 52u to 52w extend from the second main power supply wiring 59N toward the first main power supply wiring 59P. The second wirings 52u to 52w and the first wirings 51u to 51w constitute the input stage side of the power converters 12u to 12w.

  The third wirings 53u, 53v, 53w have through-hole electrode portions 53u1, 53v1, 53w1 on one end side and through-hole electrode portions 53u2, 53v2, 53w2 on the other end side. The third wirings 53u to 53w extend along the Y direction between the first main power supply wiring 59P and the second main power supply wiring 59N. The third wirings 53u to 53w constitute the output stage side of each power conversion unit 12u to 12w.

  The fourth wirings 54u, 54v, 54w have through-hole electrode portions 54u1, 54v1, 54w1 on one end side. The fifth wirings 55u, 55v, 55w have through-hole electrode portions 55u1, 55v1, 55w1 on one end side. The fourth wirings 54 u to 54 w and the fifth wirings 55 u to 55 w are connected to the gate drive circuit 13, and a control signal is input from the gate drive circuit 13.

The through-hole electrode portions 51u1, 53u1, 54u1, the through-hole electrode portions 51v1, 53v1, 54v1, and the through-hole electrode portions 51w1, 53w1, 54w1 are arranged in a row along the X direction for each of the power conversion portions 12u, 12v, 12w. A first through-hole electrode row (the first row from the top in FIG. 6) is formed.
The through-hole electrode portions 52u1, 53u2, 55u1, the through-hole electrode portions 52v1, 53v2, 55v1, and the through-hole electrode portions 52w1, 53w2, 55w1 are arranged in a row along the X direction for each of the power conversion portions 12u, 12v, 12w. The second through-hole electrode row (the first row from the bottom in FIG. 6) is arranged. The first and second through-hole electrode rows are separated from each other in the Y direction.

The through-hole electrode portions 51u1, 51v1, 51w1 are arranged at positions facing each other with the through-hole electrode portions 52u1, 52v1, 52w1 in the Y direction. Further, the through-hole electrode portions 53u1, 53v1, and 53w1 are disposed at positions facing the through-hole electrode portions 53u2, 53v2, and 53w2 in the Y direction.
The electrode pad portions 51up, 51vp, 51wp are arranged at positions facing each other in the Y direction with the electrode pad portions 52up, 52vp, 52wp. The electrode pad portions 51up, 51vp, 51wp and the electrode pad portions 52up, 52vp, 52wp are disposed between the through-hole electrode portions 51u1, 51v1, 51w1 and the through-hole electrode portions 52u1, 52v1, 52w1. Yes.

  In the first through-hole electrode row (first row from the top in FIG. 6), the through-hole electrode portions 51u1, 53u1, 54u1, the through-hole electrode portions 51v1, 53v1, 54v1, and the through-hole electrode portions 51w1, 53w1, 54w1 Includes a second main terminal (collector terminal: C) 36b, a first main terminal (emitter terminal: E) 36a, a control terminal (gate terminal) of the first semiconductor devices 30u1 to 30w1 for each of the power conversion units 12u, 12v, 12w. : G) Each of 36c is individually inserted from the main surface 50x side of the wiring board 50, and is electrically and mechanically connected by, for example, the solder material 26 (see FIG. 7).

  In the second through-hole electrode row (the first row from the bottom in FIG. 6), the through-hole electrode portions 52u1, 53u2, 55u1, the through-hole electrode portions 52v1, 53v2, 55v1, the through-hole electrode portions 52w1, 53w2, 55w1 The first main terminal (E) 36a, the second main terminal (C) 36b, and the control terminal (G) 36c of the second semiconductor devices 30u2 to 30w2 are connected to the wiring board for each of the power conversion units 12u, 12v, and 12w. 50 are individually inserted from the main surface 50x side, and are electrically and mechanically connected by, for example, the solder material 26.

One electrode of the capacitor components C1, C2, and C3 is electrically and mechanically connected to the electrode pad portions 51up, 51vp, and 51wp by, for example, a solder material 26a (see FIG. 7). Further, the other electrodes of the capacitor components C1, C2, and C3 are electrically and mechanically connected to the electrode pad portions 52up, 52vp, and 52wp by, for example, a solder material 26a.
In each of the power converters 12u, 12v, 12w, one electrode of the capacitor parts C1, C2, C3 is electrically connected to the first main power supply wiring 59P via the first wiring 51u, 51v, 51w, and the other The electrodes are electrically connected to the second main power supply wiring 59N via the second wirings 52u, 52v, 52w. That is, the capacitor components C1, C2, and C3 are connected between the first main power supply wiring 59P and the second main power supply wiring 59N.

The second main terminal (C) 36b of the first semiconductor device 30u1, 30v1, 30w1 is one of the first main power supply wiring 59P and the capacitor components C1, C2, C3 via the first wirings 51u, 51v, 51w. It is electrically connected to the electrode. That is, the second main terminal 36b of the first semiconductor devices 30u1, 30v1, 30w1 is connected between the first main power supply wiring 59P and the capacitor components C1, C2, C3.
The first main terminal (E) 36a of the second semiconductor devices 30u2, 30v2, 30w2 is connected to the other of the second main power supply wiring 59N and the capacitor components C1, C2, C3 via the second wirings 52u, 52v, 52w. It is electrically connected to the electrode. That is, the first main terminals 36a of the second semiconductor devices 30u2, 30v2, and 30w2 are connected between the second main power supply wiring 59N and the capacitor components C1, C2, and C3.

The first semiconductor devices 30u1, 30v1, 30w1 and the second semiconductor devices 30u2, 30v2, 30w2 are mounted on the wiring board 50 so as to face each other in the Y direction.
The capacitor components C1, C2, and C3 are mounted in a region between the first semiconductor devices 30u1, 30v1, and 30w1 and the second semiconductor devices 30u2, 30v2, and 30w2 on the wiring board 50.
In each power converter 12u, 12v, 12w, the second main terminal (C) 36b of the first semiconductor devices 30u1, 30v1, 30w1, and the first main terminal (E) 36a of the second semiconductor devices 30u2, 30v2, 30w2 Are arranged opposite to each other in the Y direction.
The capacitor components C1, C2, and C3 include a second main terminal (C) 36b of the first semiconductor devices 30u1, 30v1, and 30w1, and a first main terminal (E) 36a of the second semiconductor devices 30u2, 30v2, and 30w2. It is arranged between.

In each power converter 12u, 12v, 12w, the first main terminal (E) 36a of the first semiconductor devices 30u1, 30v1, 30w1 and the second main terminal (C) 36b of the second semiconductor devices 30u2, 30v2, 30w2 are Are arranged opposite to each other in the Y direction, and are electrically connected to each other via third wirings 53u, 53v, 53w.
Here, in order to arrange the first semiconductor devices 30u1 to 30w1 and the second semiconductor devices 30u2 to 30w2 so that terminals having different functions (second main terminal 36b and first main terminal 36a) face each other, FIG. As shown, the first semiconductor devices 30u1 to 30w1 and the second semiconductor devices 30u2 to 30w2 face each other so that each heat radiating surface 35b is located outside in the Y direction, and are further shifted by one terminal in the X direction. This can be easily implemented.

  In each power converter 12u, 12v, 12w, the second main terminal (C) 36b of the first semiconductor devices 30u1-30w1 is connected to the first main power supply wiring 59P and the capacitor components C1, C2, C3 as shown in FIG. The first main terminals (E) 36a of the second semiconductor devices 30u2 to 30w2 are connected between the second main power supply wiring 59N and the capacitor components C1, C2, C3. Accordingly, the capacitor components C1, C2, and C3 are used as snubber capacitors that suppress a turn-off surge voltage generated by the switching operation between the first semiconductor devices 30u1 to 30w1 and the second semiconductor devices 30u2 to 30w2.

Next, the heat dissipation structure of the power conversion device 10A according to the first embodiment of the present invention will be described with reference to FIGS. 3, 4, 7, and 8. FIG.
As shown in FIGS. 3, 4, 7, and 8, the power converter 10 </ b> A according to the first embodiment of the present invention includes a fixed plate 21 and first and second heat conductive plates 22 and 23. In addition.
The fixing plate 21 protrudes upward from the main surface 20 x of the base member 20 and is formed integrally with the base member 20. The fixing plate 21 is formed in an elongated shape (see FIG. 4) extending along the X direction, and two fixing surfaces (first fixing surface 21a, second fixing surface) located on opposite sides in the Y direction. fixing surface 21b (see FIGS. 7 and 8) has a). The fixed plate 21 and the first and second heat conductive plates 22 and 23 are formed of a metal material having good electrical conductivity and thermal conductivity, for example, aluminum die cast, like the base member 20.

The first and second heat conducting plates 22 and 23 are formed in an L shape having, for example, first portions 22a and 23a and second portions 22b and 23b bent in the vertical direction from the first portions 22a and 23a. ing. Similar to the fixed plate 21, the first and second heat conductive plates 22 and 23 are formed in a long shape extending along the X direction.
The first heat conducting plate 22 has a first portion 22a facing the first fixing surface 21a of the fixing plate 21 and a second portion 22b positioned on the opposite side of the first portion 22a from the fixing plate 21 side. The main surface 20x of the base member 20 is fixed. The second heat conductive plate 23 is arranged such that the first portion 23a faces the second fixing surface 21b of the fixing plate 21 and the second portion 23b is located on the opposite side of the first portion 23a from the fixing plate 21 side. The main surface 20x of the base member 20 is fixed. The first portion 22a, 2 3a of each of the first and second heat conducting plates 22 and 23 is spaced apart from the fixed plate 21 at predetermined intervals.

  As shown in FIG. 4, each of the first semiconductor devices 30 u 1, 30 v 1, 30 w 1 includes the fixed plate 21 and the first heat conductive plate 22 between the fixed plate 21 and the first portion 22 a of the first heat conductive plate 22. Are arranged along the longitudinal direction (X direction). Each of the second semiconductor devices 30 u 2, 30 v 2, 30 w 2 has a longitudinal direction (X direction) of the fixed plate 21 and the second heat conductive plate 23 between the fixed plate 21 and the first portion 23 a of the second heat conductive plate 23. Are arranged along. Insulation is provided between the first portion 22a of the first heat conducting plate 22 and the first semiconductor devices 30u1 to 30w1, and between the first portion 23a of the second heat conducting plate 23 and the second semiconductor devices 30u2 to 30w2. A sheet 24 is interposed.

As shown in FIG. 7, the first portion 22a of the first heat conduction plate 22, the insulating sheet 24 and the first semiconductor device 30u1, the first fixing of the fixing plate 21 by a screw member 28 from the first portion 22a side in this order It is fixed to the surface 21a by screws. Similarly, also in the first portion 23a, the insulating sheet 24, and the second semiconductor device 30u2 of the second heat conducting plate 23, the screw member 28 from the first portion 23a side to the second fixing surface 21b of the fixing plate 21 in this order. The screws are fixed together. This screwing and fixing includes screw through holes (not shown) provided in the first portions 22a and 23a of the first and second heat conducting plates 22 and 23, and screw through holes (not shown) provided in the insulating sheet 24 (not shown). The screw member 28 is inserted into a screw through hole 38c (see FIG. 9) provided in the first semiconductor device 30u1.

  Although not shown in detail, the first semiconductor devices 30v1 and 30w1 are also fixed by the screw member 28 together with the first portion 22a of the first heat conducting plate 22 and the insulating sheet 24, similarly to the first semiconductor device 30u1. The plate 21 is fixed with screws. Further, in the second semiconductor devices 30v2 and 30w2, similarly to the second semiconductor device 30u2, they are screwed and fixed to the fixing plate 21 by the screw member 28 together with the first portion 23a of the second heat conducting plate 23 and the insulating sheet 24. Yes.

  The second portion 22b of the first heat conducting plate 22 is screwed and fixed to the main surface 20x of the base member 20 by a screw member 29 from the second portion 22b side. Similarly, the second portion 23b of the second heat conducting plate 23 is also screwed and fixed to the main surface 20x of the base member 20 by the screw member 29 from the second portion 23b side. This screwing and fixing is performed by inserting a screw member 29 into a screw through hole (not shown) provided in the second portions 22b and 23b of the first and second heat conducting plates 22 and 23. The screw through hole has a vertically long shape with a width in the Y direction wider than a width in the X direction so that the position of the first and second heat conducting plates 22 and 23 can be adjusted in consideration of the positional deviation in the Y direction. ing.

Although not shown, between the second portions 22b and 23b of the first and second heat conducting plates 22 and 23 and the main surface 20x of the base member 20, thermal grease, thermal paste, silicon grease, and heat sink compound are not shown. A paste-like heat conductive material having excellent heat conductivity is interposed. The paste-like heat conductive material may fill a gap due to fine unevenness present on the joint surface between the second portions 22 b and 23 b of the first and second heat conductive plates 22 and 23 and the base member 20. The air, which is one of the factors that cause a decrease in the heat transfer coefficient, can be excluded from between the two, so that the heat transfer efficiency between the first and second heat conductive plates 22 and 23 and the base member 20 can be reduced. Can be increased.

As shown in FIG. 8, the first semiconductor device 30 u 1 is configured so that the heat radiating surface 35 b of the heat radiating plate 35 exposed from the sealing body 38 is connected to the first portion 22 a of the first heat conducting plate 22. It is fixed to the first portion 22 a of the conductive plate 22. The first semiconductor device 30u1 includes the first portion of the first heat conducting plate 22 with the insulating sheet 24 interposed between the heat radiating surface 35b of the heat radiating plate 35 and the first portion 22a of the first heat conducting plate 22. The heat radiating plate 35 is electrically insulated and separated from the first heat conducting plate 22. Further, in the first semiconductor device 30 u 1, the sealing body 38 is connected to the first fixing surface 21 a of the fixing plate 21.

Also in the second semiconductor device 30u2, the heat radiating surface 35b of the heat radiating plate 35 is fixed to the second heat conducting plate 23 so as to be connected to the first portion 23a of the second heat conducting plate 23. Then, in the second semiconductor device 30U2, while interposing an insulating sheet 24 between the first portion 23a of the heat radiating surface 35b and the second thermal conductive plate 23 of the heat sink 35 of the second heat conducting plate 23 first The heat radiating plate 35 is electrically insulated and separated from the second heat conducting plate 23. Further, also in the second semiconductor device 30 u 2, the sealing body 38 is connected to the second fixing surface 21 b of the fixing plate 21.

  The insulating sheet 24 is formed of a resin material having good insulation and thermal conductivity, for example, a polyimide resin material. The insulating sheet 24 will be described in detail later. In the assembly (manufacture) of the power conversion device 10A, the first and second semiconductor devices 30u1 and 30u2 and the first and second heat conduction plates 22 and 23 are fixed plates. In order to improve workability when screwing and fixing to 21, those having adhesiveness are preferable. Further, since the insulating sheet 24 receives a compressive force when the first and second semiconductor devices 30u1 and 30u2 are fixed with screws, the insulating sheet 24 is not easily deformed in order to ensure insulation even when receiving the compressive force. It is preferable to use the insulating sheet 24.

Although not shown in detail, the first semiconductor devices 30v1 and 30w1 and the second semiconductor devices 30v2 and 30w2 also have a heat dissipation surface 35b of the heat dissipation plate 35 similar to the first and second semiconductor devices 30u1 and 30u2. The first portion 22a of the first heat conducting plate 22 and the second heat with the insulating sheet 24 interposed between the first portion 22a of the first heat conducting plate 22 and the first portion 23a of the second heat conducting plate 23. The heat radiating plate 35 is fixed to the first portion 23 a of the conductive plate 23, and is electrically insulated and separated from the first heat conductive plate 22 and the second heat conductive plate 23. Further, the sealing body 38 is connected to the first and second fixing surfaces 21 a and 21 b of the fixing plate 21.

Next, an assembly procedure of the power conversion device 10A will be described with reference to FIGS. 2 to 4, 7 and 8. FIG.
First, the base member 20, the first and second heat conduction plates 22, 23, the first semiconductor devices 30u1 to 30w1, the second semiconductor devices 30u2 to 30w2, and the wiring board 50 are prepared. Capacitor components C1 to C3 are mounted on the main surface of the wiring board 50, and electronic components such as a semiconductor device having the gate drive circuit 13 and a semiconductor device having the control circuit 14 are also mounted. These electronic components and capacitor components C1 to C3 are mounted on the wiring board 50 by the solder material 26a shown in FIG. The wiring board 50 is formed with wirings 51u to 55u, 51v to 55v, 51w to 55w and the like having through-hole electrode portions and electrode pad portions.

  Next, an insulating sheet 24 is interposed in the first portion 22 a of the first heat conductive plate 22, and the first semiconductor devices 30 u 1 to 30 w 1 are temporarily fixed along the longitudinal direction of the first heat conductive plate 22. Further, an insulating sheet 24 is interposed in the first portion 23 a of the second heat conductive plate 23, and the second semiconductor devices 30 u 2 to 30 w 2 are temporarily fixed along the longitudinal direction of the second heat conductive plate 23. This temporary fixing is performed using the adhesiveness of the insulating sheet 24.

  Further, the temporary fixing is not shown in detail, but in each semiconductor device, screw through holes (not shown) provided in the first portions 22a and 23a of the first and second heat conducting plates 22 and 23 are shown. And the screw through holes (not shown) provided in the insulating sheet 24 and the screw through holes 38c provided in the first and second semiconductor devices 30u1 to 30w1 and 30u2 to 30w2 are collinear. It is done so that it is located in

  In addition, in the first semiconductor devices 30u1 to 30w1, this temporary fixing is performed by insulating sheets on the outer surface of the first portion 22a of the first heat conducting plate 22 (the surface opposite to the surface on the second portion 22b side). 24, the heat radiating surface 35b of the heat radiating plate 35 is connected. Also in the second semiconductor devices 30u2 to 30w2, heat is radiated by interposing the insulating sheet 24 on the outer surface of the first portion 23a of the second heat conducting plate 23 (the surface opposite to the surface on the second portion 23b side). The heat radiation surface 35b of the plate 35 is connected.

Next, the first portion 22a of the first heat conducting plate 22, the insulating sheet 24, and the first semiconductor device 30u1 are collectively put together in this order by the screw member 28 from the first portion 22a side, and the first fixing surface 21a of the fixing plate 21 . Secure to. Similarly, also in the first semiconductor devices 30v1 and 30w1, the first fixing surface of the fixing plate 21 is collectively by the screw member 28 from the first portion 22a side in the order of the first portion 22a, the insulating sheet 24, and the first semiconductor device. It fixes to 21a.

Further, the first portion 23a, the insulating sheet 24, and the second semiconductor device 30u2 of the second heat conductive plate 23 are collectively attached to the second fixing surface 21b of the fixing plate 21 from the first portion 23a side by the screw member 28 in this order. Secure with screws. Similarly, also in the second semiconductor devices 30v2 and 30w2, the second fixing surface of the fixing plate 21 is collectively by the screw member 28 from the first portion 23a side in the order of the first portion 23a, the insulating sheet 24, and the second semiconductor device. It fixes to 21b.

In the first semiconductor devices 30 u 1 to 30 w 1, this screwing and fixing is performed using a screw through hole in the first portion 22 a of the first heat conducting plate 22, a screw through hole in the insulating sheet 24, and a screw through hole in the first semiconductor device. This is performed by inserting the screw member 28 into the hole 38c. Further, in the second semiconductor device 30U2～30w2, threaded through-hole of the first portion 23 a of the second heat conducting plate 23, the screw through hole 38c of the screw through hole and the second semiconductor device of the insulating sheet 24 This is performed by inserting the screw member 28.

  Next, the second portions 22b and 23b of the first and second heat conducting plates 22 and 23 are fixed to the main surface 20x of the base member 20 by screw members 29 from the second portions 22b and 23b side. These screws are fixed by passing the screw member 29 through the screw through holes provided in the second portions 22b and 23b of the first and second heat conducting plates 22 and 23. These screws are fixed by interposing a paste-like heat conductive material between the second portions 22b, 23b of the first and second heat conductive plates 22, 23 and the base member 20.

  Next, the wiring board 50 is screwed and fixed to the front ends of the four struts 25 of the base member with the screw members 27. This screwing and fixing is performed such that the main surface 50x of the wiring board 50 faces the base member 20. Further, as shown in FIG. 6, the screws are fixed to the terminals of the first and second semiconductor devices 30u1 to 30w1 and 30u2 to 30w2 (first main terminal 36a, second main terminal 36b, and control terminal 36c). This is done by inserting into the corresponding through-hole electrode portions 51u1, 53u1, 54u1, 52u1, 53u2, 55u1,.

  Next, the tip portions (inserted portions) of the terminals (first main terminal 36a, second main terminal 36b, and control terminal 36c) of the first and second semiconductor devices 30u1 to 30w1 and 30u2 to 30w2 are passed through the wiring board 50. The hole electrode portions 51u1, 53u1, 54u1, 52u1, 53u2, 55u1,... Are electrically and mechanically connected by the solder material 26, and the first and second semiconductor devices 30u1 are arranged on the main surface 50x side of the wiring board 50. -30w1, 30u2-30w2 are mounted. Thereby, assembly of power converter 10A concerning a 1st embodiment of the present invention is almost completed.

Next, the configuration of the power conversion device 10A according to the first embodiment of the present invention will be further described.
As shown in FIGS. 6 and 7, the power conversion device 10A according to the first exemplary embodiment of the present invention includes a second main unit of the first semiconductor devices 30u1, 30v1, and 30w1 in each of the power conversion units 12u, 12v, and 12w. The terminal (C) 36b is connected between the first main power supply wiring 59P and the capacitor components C1, C2, C3, and the first main terminal (E) 36a of the second semiconductor devices 30u2, 30v2, 30w2 is the second main power supply. The wiring 59N is connected between the capacitor parts C1, C2, and C3. The capacitor components C1, C2, and C3 are arranged in a region between the first semiconductor devices 30u1, 30v1, and 30w1 and the second semiconductor devices 30u2, 30v2, and 30w2 mounted on the wiring substrate 50 so as to face each other. Has been implemented.

  Therefore, according to the power conversion device 10A according to the first embodiment of the present invention, in each of the power conversion units 12u, 12v, and 12w that constitute the inverter circuit 11, the capacitor components C1, C2, and C3 are connected as in the conventional case. Compared to the case where the first semiconductor device 30u1 to 30w1 and the second semiconductor device 30u2 to 30w2 are disposed outside the region between the first semiconductor device 30u1 to 30w1, the capacitor component C1 is provided between the first main power supply wire 59P and the second main power supply wire 59N. , C2, C3, the lengths of the first wirings 51u, 51v, 51w and the second wirings 52u, 52v, 52w can be shortened, so that the first semiconductor device 30u1, 2 Inductance of a current path including the semiconductor device 30u2 and the capacitor component C1, the first semiconductor device 30v1 and the second semiconductor in the power conversion unit 12v Reducing the inductance of the current path including the device 30v2 and the capacitor component C2, and the inductance of the current path including the first semiconductor device 30w1, the second semiconductor device 30w2, and the capacitor component C3 in the power conversion unit 12w, respectively. it can.

  In addition, since the inductance of the circuit of current circuit in each of the power conversion units 12u, 12v, and 12w can be reduced, the capacitor components C1, C2, and C3 are connected to the first semiconductor devices 30u1 to 30w1 as in the conventional case. Capacitor components C1, C2, and C3 having small capacities can be used as compared with the case where the second semiconductor devices 30u2 to 30w2 are disposed outside the region. Thereby, the inductance of the circuit of the current path in power converters 12u, 12v, and 12w can be further reduced. As a result, the power converter 10A according to the first embodiment of the present invention can achieve low inductance.

Here, in power converter 10A concerning a 1st embodiment of the present invention, capacitor parts C1, C2, and C3 are used as a snubber capacitor. When, for example, chip capacitors are used as the capacitor components C1, C2, and C3, the parasitic inductances of the chip capacitors (C1, C2, and C3), the first semiconductor devices 30u1 to 30w1, and the second semiconductor devices 30u2 to 30w2 are respectively It is on the order of several nH. Therefore, the inductance of the current path in one circuit in each power conversion unit 12u, 12v, 12w is 10 nH or less. Assuming that the inductance is 10 nH and the surge voltage can be allowed up to 300 V, the allowable current change rate is 30 × 10 ⁻⁹ A / sec, which can cope with a switching several times faster than the current Si switching element.

In the case of a chip type capacitor, the capacity of a capacitor having a withstand voltage of 1000 V class is not large up to about 10 nF. However, in a general 100A class inverter, the inductance of the current path in one circuit is 100 nH or more, and the required capacity of the snubber capacitor is required to be about 100 nF, which is often used. Therefore, when the conventional general method is adopted, it is difficult to apply a chip capacitor as a snubber capacitor at a voltage of 1000 V class.
The required capacity of the snubber capacitor is obtained by the following equation (1) since it is necessary to receive the energy stored in the inductance of the current path of the circuit during energization by the snubber capacitor.
C _s = L _r × (i / ΔV) ² (1)
Here, C _s : snubber capacitor capacity, L _r : circuit inductance, i: current, ΔV: allowable surge voltage

In the power conversion device 10A according to the first embodiment of the present invention, since the wiring length is short, when the circuit inductance L = 10 nH, the energization current i = 100 A, and the allowable surge voltage ΔV = 300 V, C _s = 1.1 nF. Therefore, in the power conversion device 10A according to the first embodiment of the present invention, as described above, the inductance of the current path in one circuit in each of the power conversion units 12u, 12v, and 12w is compared with a conventional general value. Therefore, it is possible to use capacitor parts C1, C2, and C3 having a capacity that is lower by one digit or more as a snubber capacitor, and a chip type capacitor can be applied. In the case of a chip-type capacitor, a capacitor having a withstand voltage of 1000 V and a capacity of up to 10 nF is commercially available. Since this chip type capacitor has a smaller outer size than the cylindrical electric field capacitor and is reduced in size according to the capacity, it is narrow between the first semiconductor devices 30u1 to 30w1 and the second semiconductor devices 30u2 to 30w2. It can be easily mounted even in the area. Therefore, the power conversion device 10A according to the first embodiment of the present invention can achieve a reduction in inductance and a reduction in size.

  As described above, in the power conversion device 10A according to the first embodiment of the present invention, the capacitor parts C1, C2, and C3 used as the snubber capacitors are arranged for each of the power conversion units 12u, 12v, and 12w. . Therefore, since the power conversion device 10A according to the first embodiment of the present invention can reduce the inductance of the current path in one circuit for each power conversion unit 12u, 12v, 12w, each power conversion unit 12u, 12v, It is possible to reduce the inductance while suppressing variations in the inductance of the current path in 12w.

  The capacitor components C1, C2, and C3 include the second main terminal (C) 36b of the first semiconductor devices 30u1 to 30w1 and the second semiconductor as in the power conversion device 10A according to the first embodiment of the present invention. It is preferable to arrange between the first main terminals (E) 36a of the devices 30u2 to 30w2. In this case, since the second main terminals 36b of the first semiconductor devices 30u1 to 30w1 and the first main terminals 36a of the second semiconductor devices 30u2 to 30w2 can be connected by the capacitor components C1, C2, and C3 in the shortest time. In addition, the inductance of the current path in one circuit in each power conversion unit 12u, 12v, 12w can be further reduced.

  In the power conversion device 10A according to the first embodiment of the present invention, the first semiconductor device 30u1 and other semiconductor devices (first semiconductor devices 30v1 and 30w1, second semiconductor devices 30u2 to 30w2) are as shown in FIG. In addition, heat generated in the semiconductor chips 33 and 34 by the operation of the switching element 15 and the diode element 16 is transmitted to the heat radiating plate 35. In the first semiconductor devices 30u1 to 30w1, the first heat conduction plate is configured such that the heat radiation surface 35b of the heat radiation plate 35 is connected to the first portion 22a of the first heat conduction plate 22 as shown in FIG. 22 is fixed to the first portion 22a. Also in the second semiconductor devices 30 u 2 to 30 w 2, the heat radiating surface 35 b of the heat radiating plate 35 is connected to the first portion 23 a of the second heat conducting plate 23, so that the first portion 23 a of the second heat conducting plate 23 is connected. It is fixed.

  Therefore, according to the power conversion device 10A according to the first embodiment of the present invention, the heat transferred to the heat radiation plate 35 of the first semiconductor devices 30u1 to 30w1 passes through the insulating sheet 24 and the first heat conduction plate 22. Then, it is transmitted to the base member 20 and diffused to the outside from the convex fins 20b of the base member 20, so that the heat dissipation effect can be enhanced. The heat transmitted to the heat radiating plate 35 of the second semiconductor devices 30u2 to 30w2 is transmitted to the base member 20 via the insulating sheet 24 and the second heat conducting plate 23, and from the convex fins 20b of the base member 20. Since it is dissipated outside, the heat dissipation effect can be enhanced. Accordingly, it is possible to provide the power conversion device 10A having a low inductance and a high heat dissipation effect and the electric motor 1 including the same.

In the power conversion device 10A according to the first embodiment of the present invention, the first semiconductor devices 30u1 to 30w1 and the second semiconductor devices 30u2 to 30w2 include a heat sink 35 and a second main terminal (collector terminal: C) 36b. Since they are integrally formed and electrically connected, the heat radiating plate 35 is fixed at the same potential as the second main terminal 36b (see FIG. 8). On the other hand, in the inverter circuit 11, as shown in FIG. 6, the second main terminals 36b of the first semiconductor devices 30u1 to 30w1 are electrically connected to the first main power supply wiring 59P, and the second semiconductor devices 30u2 to 30w2 Since the two main terminals 36b are electrically connected to the first main terminals (emitter terminals: E) 36a of the first semiconductor devices 30u1 to 30w1, the heat sink 35 of the first semiconductor devices 30u1 to 30w1 and the second semiconductor device 30u2 The potential is fixed to a potential different from that of the heat sink 35 of ˜30w2. Therefore, the heat generated in the first semiconductor devices 30u1 to 30w1 is transmitted from the heat radiating plate 35 to the base member 20 via the first heat conducting plate 22, and the heat generated in the second semiconductor devices 30u2 to 30w2 is transferred to the heat radiating plate. from 35 to transmit to the second heat conduction plate 2 3 base member 20 via the electrical of the heat sink 35 of the first semiconductor device 30u1~30w1 the heat sink 35 of the second semiconductor device 30u2~30w2 It is necessary to cut off the continuity.

  Therefore, in the power conversion device 10A according to the first embodiment of the present invention, the first semiconductor devices 30u1 to 30w1 include the heat radiation surfaces 35b of the heat radiation plate 35 and the first heat conduction plates 22 as shown in FIG. The insulating sheet 24 is interposed between the first portion 22a and the first portion 22a. The first portion 22a of the first heat conducting plate 22 is fixed to the first portion 22a. Yes. Also, in the second semiconductor devices 30u2 to 30w2, the second heat conduction plate 23 is disposed with the insulating sheet 24 interposed between the heat radiation surface 35b of the heat radiation plate 35 and the first portion 23a of the second heat conduction plate 23. The heat radiating plate 35 is electrically insulated and separated from the second heat conducting plate 23. Therefore, according to the power conversion device 10A according to the first embodiment of the present invention, the heat radiation plate 35 of the first semiconductor devices 30u1 to 30w1 and the heat radiation plate 35 of the second semiconductor devices 30u2 to 30w2 are fixed at different potentials. Even so, the heat of the first semiconductor devices 30u1 to 30w1 and the second semiconductor devices 30u2 to 30w2 is transmitted from the heat radiating plate 35 to the base member 20 via the first heat conducting plate 22 and the second heat conducting plate 23. Therefore, it is possible to provide the power converter 10A having a low inductance and a high heat dissipation effect and the electric motor 1 including the same.

(Modification)
Next, a modified example of the power conversion device 10A according to the first embodiment of the present invention will be described.
In the power conversion device 10A according to the first embodiment of the present invention described above, as shown in FIG. 8, the heat radiation surface 35b of the heat radiation plate 35 and the first heat conduction plate 22 of the first semiconductor devices 30u1 to 30w1. An insulating sheet 24 is interposed between the portion 22a and the insulating sheet 24 is interposed between the heat radiating surface 35b of the heat radiating plate 35 of the second semiconductor devices 30u2 to 30w2 and the first portion 23a of the second heat conducting plate 23. Thus, electrical conduction between the heat sink 35 of the first semiconductor devices 30u1 to 30w1 and the heat sink 35 of the second semiconductor devices 30u2 to 30w2 is interrupted.

On the other hand, in the modification of the power conversion device 10A according to the first embodiment of the present invention, the second portion 22b of the first heat conducting plate 22 has a base with an insulating sheet 24 interposed, as shown in FIG. The main surface 20 x of the member 20 is screwed and fixed by a screw member 29, and the first heat conductive plate 22 is insulated and separated from the base member 20. Also in the second heat conductive plate 23, the second portion 23 b is screwed and fixed to the main surface 20 x of the base member 20 with the screw member 29 with the insulating sheet 24 interposed therebetween, and is insulated and separated from the base member 20. . Between the heat sink 35 of the first semiconductor device 30u1 and the first portion 22a of the first heat conductive plate 22, and between the heat sink 35 of the second semiconductor device 30u2 and the first portion 23a of the second heat conductive plate 23. The insulating sheet 24 is not interposed. Although not shown, similarly, in the first semiconductor devices 30v1 and 30w1 and the second semiconductor devices 30v2 and 30w2, the heat sink 35 and the first portions 22a and 23a of the first and second heat conducting plates 22 and 23 are provided. Insulating sheet 24 is not interposed between the two.

In the case of this modification example, the first semiconductor device 30u1 will be described as an example, and the insulating sheet 24 is provided between the heat radiation plate 35 of the first semiconductor device 30u1 and the first portion 22a of the first heat conduction plate 22. The heat transfer coefficient between the heat radiating plate 35 of the first semiconductor device 30u1 and the first portion 22a of the first heat conducting plate 22 is improved as compared with the case where it is interposed.
On the other hand, in this modification, since the insulating sheet 24 is interposed between the second portion 22b of the first heat conducting plate 22 and the base member 20, the first heat is compared to the case of the first embodiment. The thermal conductivity between the second portion 22b of the conductive plate 22 and the base member 20 is reduced.

  However, in the case of this modification, the heat transmitted from the heat sink 35 of the first semiconductor device 30u1 to the first heat conductive plate 22 is once diffused and dispersed by the first heat conductive plate 22, and the first heat conductive plate 22 is dispersed. Since the heat is transmitted from the second portion 22b of the first semiconductor device 30u1 to the base member 20, the heat before diffusion from the heat dissipation plate 35 of the first semiconductor device 30u1 is transmitted to the first heat conducting plate 22. Thus, the heat transfer efficiency from the heat sink 35 of the first semiconductor device 30u1 to the convex fins 20b of the base member 20 can be increased.

  In addition, although it demonstrated demonstrating focusing on the 1st semiconductor device 30u1, the heat transfer efficiency from the heat sink 35 of the 2nd semiconductor device 30u2 to the convex fin 20b of the base member 20 can also be improved. Similarly, in the other first semiconductor devices 30v1, 30w1 and second semiconductor devices 30v2, 30w2, the heat transfer efficiency from the heat sink 35 to the convex fins 20b of the base member 20 can be increased.

  In the first embodiment of the present invention, as a semiconductor device constituting the inverter circuit 11, the semiconductor chip 33 on which the switching element 15 is formed and the semiconductor chip 34 on which the diode element 16 is formed in one package. Although the case where the semiconductor device is used has been described, the present invention is not limited to this. For example, a semiconductor device in which the switching element 15 and the diode element 16 are integrated in one semiconductor chip can also be used.

(Second Embodiment)
In the second embodiment of the present invention, a case will be described in which a semiconductor device incorporating a switching element and a diode component incorporating a diode element are used as electronic components constituting the inverter circuit.
The power conversion device 10B according to the second embodiment of the present invention has substantially the same configuration as the power conversion device 10A according to the first embodiment of the present invention described above, but the configuration and wiring of the power conversion unit The wiring pattern of the board is different. Hereinafter, a power conversion device 10B according to a second embodiment of the present invention will be described with reference to FIGS. 11 to 18, focusing on a power conversion unit and a wiring board constituting an inverter circuit.

  As shown in FIG. 13, in the power conversion device 10B according to the second embodiment of the present invention, the U-phase power conversion unit 12u configuring the inverter circuit 11 includes first and second semiconductor devices 31u1 and 31u2. The first and second diode parts 41u1, 41u2 and the capacitor part C1 are included. The V-phase power converter 12v constituting the inverter circuit 11 also includes the first and second semiconductor devices 31v1 and 31v2, the first and second diode components 41v1 and 41v2, and the capacitor component C2. It has become. The W-phase power conversion unit 12w constituting the inverter circuit 11 also includes the first and second semiconductor devices 31w1 and 31w2, the first and second diode components 41w1 and 41w2, and the capacitor component C3. It has become.

  Each of the power conversion units 12u to 12w has a configuration in which first semiconductor devices 31u1 to 31w1 as upper arms and second semiconductor devices 31u2 to 31w2 as lower arms are connected in series. The first semiconductor devices 31u1 to 31w1 and the second semiconductor devices 31u2 to 31w2 have a switching element 15 as an IGBT. The first diode parts 41 u 1 to 41 w 1 and the second diode parts 41 u 2 to 41 w 2 have a diode element 16. The diode element 16 is reversely connected in parallel to the switching element 15.

Next, the first semiconductor devices 31u1 to 31w1 and the second semiconductor devices 31u2 to 31w2 constituting the power conversion units 12u to 12w of the inverter circuit 11 will be described with reference to FIG.
Since the first semiconductor devices 31u1 to 31w1 and the second semiconductor devices 31u2 to 31w2 use products having the same function and the same structure, the first semiconductor device 31u1 is illustrated as in the first embodiment. Therefore, the description of the other first semiconductor devices 31v1 and 31w1 and the second semiconductor devices 31u2 to 31w2 will be omitted.

As shown in FIGS. 17 (a) and 17 (b), the first semiconductor device 31u1 has substantially the same configuration as the first semiconductor device 30u1 of the first embodiment described above. Are different. That is, the first semiconductor device 31u1 does not include the semiconductor chip 34 on which the diode element 16 is formed, and the switching element 15 as the IGBT, as compared with the first semiconductor device 30u1 of the first embodiment described above. Only the semiconductor chip 33 having the structure is fixed to the heat radiating plate 35.
Also in the first semiconductor device 31u1 configured as described above, the electrical signal between the first main terminal (emitter terminal: E) 36a and the second main terminal (collector terminal: C) is controlled by the control signal input to the control terminal 36c. The connection is configured such that the switching element 15 is turned on / off.

Next, the 1st diode components 41u1-41w1 and the 2nd diode components 41u2-41w2 which comprise each power converter 12u-12w of the inverter circuit 11 are demonstrated using FIG.
Note that the first diode parts 41u1 to 41w1 and the second diode parts 41u2 to 41w2 also use products having the same function and the same structure, and thus the first diode parts 41u1 are exemplarily shown in the same manner as the first semiconductor device 31u1. The description will be omitted, and description of the other first diode components 41v1 and 41w1 and the second diode components 41u2 to 41w2 will be omitted.

  As shown in FIG. 18 ((a), (b), (c)), the first diode component 41u1 includes a semiconductor chip 44, a heat radiating plate 45, and three terminals (first anode terminal (A) 46a1, The second anode terminal (A) 46a2, the cathode terminal 46b), and a sealing body 48 for sealing them are configured. Unlike the semiconductor chip 34 of the first embodiment described above, the semiconductor chip 44 is mainly composed of a semiconductor substrate made of, for example, silicon carbide (SiC).

A diode element 16 shown in FIG. 13 is formed on the semiconductor chip 44. A main surface electrode 44 a electrically connected to the anode region of the diode element 16 is formed on the main surface of the semiconductor chip 44. In addition, a back surface electrode 44 c electrically connected to the cathode region of the diode element 16 is formed on the back surface opposite to the main surface of the semiconductor chip 44.
The heat radiating plate 45 has an element mounting surface 45 a and a heat radiating surface 45 b located on the opposite sides, and the heat radiating surface 45 b is exposed from the sealing body 38.

  Each of the first anode terminal 46 a 1, the second anode terminal 46 a 2, and the cathode terminal 46 b is formed by, for example, a lead extending over the inside and outside of the sealing body 48, and one end side of each is sealed with the sealing body 48. Yes. The three terminals (46a1, 46a2, 46b) and the heat radiating plate 45 are made of, for example, a metal material similar to the heat radiating 35 described above. The sealing body 48 is formed in a square shape in plan view, and is formed of the same material as the sealing body 38 described above, for example.

  The semiconductor chip 44 is fixed to the heat radiating plate 45 such that the back surface electrode 44 c faces the element mounting surface 45 a of the heat radiating plate 45. The back electrode 44c of the semiconductor chip 44 is electrically and mechanically connected to the heat sink 45 with a conductive adhesive such as solder interposed therebetween. That is, the first diode component 41u1 is configured such that heat generated in the semiconductor chip 44 due to the operation of the diode element 16 is transmitted to the heat radiating plate 45.

  One end side of each of the first and second anode terminals 46a1 and 46a2 is electrically connected to the main surface electrode 44a of the semiconductor chip 44 through the respective bonding wires 47 inside the sealing body 48. Further, one end side of the cathode terminal 46 b is formed integrally with the heat radiating plate 45 inside the sealing body 48 and is electrically connected. That is, the first and second anode terminals 46a1 and 46a2 are connected in parallel to the anode region of the diode element 16 inside the diode component 41u1. The heat radiation plate 45 is fixed at the same potential as the cathode terminal 46b.

  The heat radiating plate 45 is provided with a screw through hole 45c penetrating from the element mounting surface 45a to the heat radiating surface 45b. Further, the sealing body 48 is provided with a screw through hole 48c that extends in the same direction as the screw through hole 45c through the screw through hole 45c of the heat radiating plate 45. The screw through hole 48c of the sealing body 48 is smaller than the screw through hole 45c of the heat radiating plate 45 so that the side wall in the screw through hole 45c of the heat radiating plate 45 is covered with the insulating resin of the sealing body 48. It is formed with an external size. That is, the first diode component 41u1 and the other diode components (41v1, 41w1, 41u2 to 41w2) are configured by the TO247 type in which the insulation of the screw through hole 48c is ensured, like the first semiconductor device 31u1 described above. ing.

Next, the wiring pattern of the wiring board 60 will be described, and the first semiconductor devices 31u1 to 31w1, the second semiconductor devices 31u2 to 31w2, the first diode components 41u1 to 41w1, the second diode components 41u2 to 41w2, and the capacitor component C1. ˜C3 will be described with reference to FIGS. 14 and 15.
14 is a layout view seen through from the back side of the wiring board, as in FIG. FIG. 15 exemplarily shows a mounting state of the first and second semiconductor devices 31u1 and 31u2, the first and second diode components 41u1 and 41u2, and the capacitor component C1 constituting the U-phase power conversion unit 12u. However, the mounting state of the electronic components (the first and second semiconductor devices 31v1 and 31v2, the first and second diode components 41v1 and 41v2, the capacitor component C2) constituting the V-phase power conversion unit 12v, In the mounting state of the electronic components (first and second semiconductor devices 31w1 and 31w2, first and second diode components 41w1 and 41w2, and capacitor component C3) constituting the power conversion unit 12w, the same mounting as in the case of the U phase is performed. Since it is in a state, a sectional view showing a mounting state relating to these V phase and W phase is omitted.

As shown in FIGS. 11 and 15, the power converter 10 </ b> B according to the second embodiment of the present invention replaces the wiring board 50 shown in FIGS. 3 and 7 with 4 on the main surface 20 x side of the base member 20. A wiring board 60 supported via two columns 25 is provided. The wiring board 60 has a main surface 60x and a back surface 60y located on opposite sides in the thickness direction.
As shown in FIGS. 14 and 15, the wiring board 60 includes a first main power supply wiring 69P to which a first reference voltage (for example, 300V) is applied, and a second reference voltage (for example, a potential lower than the first reference voltage). 0V) is applied to the second main power supply wiring 69N. Further, the wiring board 60 corresponds to the number of the power conversion units 12u, 12v, 12w, the first wirings 61u, 61v, 61w, the second wirings 62u, 62v, 62w, and the third wirings 63u, 63v, 63w. 4th wiring 64u, 64v, 64w, 5th wiring 65u, 65v, 65w, 6th wiring 66u, 66v, 66w, and 7th wiring 67u, 67v, 67w.

The first main power supply wiring 69P and the second main power supply wiring 69N extend along the X direction and are spaced apart from each other in the Y direction. The first main power supply wiring 69P corresponds to the positive electrode line 19P in FIG. 13, and the second main power supply wiring 69N corresponds to the negative electrode line 19N in FIG.
The first wirings 61u, 61v, 61w are connected at one end side to the first main power supply wiring 69P and have electrode pad portions 61up, 61vp, 61wp at the other end side. The first wires 61u to 61w have through-hole electrode portions 61u1, 61v1, 61w1 between the first main power supply wire 69P on one end side and the electrode pad portions 61up, 61vp, 61wp on the other end side. . The first wirings 61u to 61w have through-hole electrode portions 61u2, 61v2, and 61w2 between the through-hole electrode portions 61u1 to 61w1 and the electrode pad portions 61up to 61wp. The first wires 61u to 61w extend from the first main power supply wire 69P toward the second main power supply wire 69N.

The second wirings 62u, 62v, 62w have through-hole electrode portions 62u1, 62v1, 62w1 on one end side, and electrode pad portions 62up, 62vp, 62wp on the other end side. The second wiring 62u~62w, in between the first main supply line 69P and second main power supply wiring 69 N, and extends along the Y direction.
The third wirings 63u, 63v, 63w have through-hole electrode portions 63u1, 63v1, 63w1 on one end side, and have through-hole electrode portions 63u2, 63v2, 63v3 on the other end side. The third wirings 63u to 63w have through-hole electrode portions 63u3, 63v3, and 63w3 between the through-hole electrode portions 63u1 to 63w1 and the through-hole electrode portions 63u2 to 63v3. The third wiring 63u~63w, in between the first main supply line 69P and second main power supply wiring 69 N, and extends along the Y direction.

The fourth wirings 64u, 64v, and 64w have through-hole electrode portions 64u1, 64v1, and 64w1 on one end side, and have through-hole electrode portions 64u2, 64v2, and 64w2 on the other end side. The fourth wires 64u to 64w extend along the Y direction between the first main power supply wire 69P and the second main power supply wire 69N.
The fifth wirings 65u, 65v, 65w have one end connected to the second main power supply wiring 69N and the through hole electrode portions 65u1, 65v1, 65w1 on the other end. The fifth wires 65u to 65w have through-hole electrode portions 65u2, 65v2, 65w2 between the second main power supply wire 69N and the through-hole electrode portions 65u1, 65v1, 65w1. The fifth wirings 65u to 65w extend from the second main power supply wiring 69N toward the first main power supply wiring 69P.

The sixth wirings 66u, 66v, 66w have through-hole electrode portions 66u1, 66v1, 66w1 on one end side. The seventh wirings 67u, 67v, 67w have through-hole electrode portions 67u1, 67v1, 67w1 on one end side. A control signal is input from the gate drive circuit 13 to the sixth wirings 66u to 66w and the seventh wirings 67u to 67w.
The first wirings 61u to 61w, the second wirings 62u to 62w, the first anode terminal 46a1 and the second anode terminal 46a2 of the second diode parts 41u2 to 41w2, and the fifth wirings 65u to 65w are respectively connected to the power converters 12u to 12w. The input stage side is configured. The third wirings 63u to 63w constitute the output stage side of each of the power conversion units 12u to 12w.

The through-hole electrode portions 61u1, 64u1, 66u1, the through-hole electrode portions 61v1, 64v1, 66v1, and the through-hole electrode portions 61w1, 64w1, 66w1 are arranged in a row along the X direction for each of the power conversion portions 12u, 12v, 12w. A first through-hole electrode row (first row from the top in FIG. 14) is formed.
Further, the through-hole electrode portions 63u2, 65u2, 67u1, the through-hole electrode portions 63v2, 65v2, 67v1, and the through-hole electrode portions 63w2, 65w2, 67w1 are arranged in a row along the X direction for each of the power conversion portions 12u, 12v, 12w. The second through-hole electrode row (the first row from the bottom in FIG. 14) is arranged. The first and second through-hole electrode rows are separated from each other in the Y direction.

The through-hole electrode portions 61u2, 63u1, 64u2, the through-hole electrode portions 61v2, 63v1, 64v2, and the through-hole electrode portions 61w2, 63w1, 64w2 are arranged in a row along the X direction for each of the power conversion portions 12u, 12v, 12w. The third through-hole electrode row (second row from the top in FIG. 14) is arranged.
The through-hole electrode portions 62u1, 63u3, 65u1, the through-hole electrode portions 62v1, 63v3, 65v1, and the through-hole electrode portions 62w1, 63w3, 65w1 are arranged in a line along the X direction, and the fourth through-hole electrode row (Second row from the bottom in FIG. 14). The third and fourth through-hole electrode rows are disposed between the first through-hole electrode and the second through-hole electrode, and are separated from each other in the Y direction.

  The through-hole electrode portions 61u1, 61v1, 61w1 are disposed at positions facing the through-hole electrode portions 61u2, 61v2, 61w2 in the Y direction. Further, the through-hole electrode portions 61u2, 61v2, and 62w2 are disposed at positions facing the through-hole electrode portions 62u1, 62v1, and 62w1 in the Y direction. Further, the through-hole electrode portions 62u1, 62v1, 62w1 are arranged at positions facing the through-hole electrode portions 67u1, 67v1, 67w1 in the Y direction.

  The through-hole electrode portions 66u1, 66v1, 66w1 are arranged to face each other in the Y direction with the through-hole electrode portions 63u1, 63v1, 63w1. Further, the through-hole electrode portions 63u1, 63v1, and 63w1 are disposed at positions facing the through-hole electrode portions 63u3, 63v3, and 63w3 in the Y direction. Further, the through-hole electrode portions 63u3, 63v3, and 63w3 are disposed at positions facing the through-hole electrode portions 63u2, 63v2, and 63w2 in the Y direction.

Through-hole electrode portions 64u1,64v1,64w1, in the Y direction, are arranged at mutually opposite positions with the through-hole electrode portions 64u2,6 4 v2,64w2. The through-hole electrode portions 65u1, 65v1, 65w1 are disposed at positions facing the through-hole electrode portions 65u2, 65v2, 65w2 in the Y direction.
The electrode pad portions 61up, 61vp, 61wp are arranged at positions facing each other in the Y direction with the electrode pad portions 62up, 62vp, 62wp. The electrode pad portions 61up, 61vp, 61wp and the electrode pad portions 62up, 62vp, 62wp are arranged between the through-hole electrode portions 61u2, 61v2, 61w2, and the through-hole electrode portions 62u1, 62v1, 62w1. Yes.

  In the first through-hole electrode row (the first row from the top in FIG. 14), the through-hole electrode portions 61u1, 64u1, 66u1, the through-hole electrode portions 61v1, 64v1, 66v1, and the through-hole electrode portions 61w1, 64w1, 66w1 The second main terminal (C) 36b, the first main terminal (E) 36a, and the control terminal (G) 36c of the first semiconductor devices 31u1 to 31w1 are wired for each of the power conversion units 12u, 12v, and 12w. The substrates 60 are individually inserted from the main surface 60x side, and are electrically and mechanically connected by, for example, a solder material 26 (see FIG. 15).

  In the second through-hole electrode row (the first row from the bottom in FIG. 14), the through-hole electrode portions 63u2, 65u2, 67u1, the through-hole electrode portions 63v2, 65v2, 67v1, and the through-hole electrode portions 63w2, 65w2, 67w1 The second main terminals (C) 36b, the first main terminals (E) 36a, and the control terminals (G) 36c of the second semiconductor devices 31u2 to 31w2 are individually inserted from the main surface 60x side of the wiring board 60. For example, they are electrically and mechanically connected by a solder material 26.

  In the third through-hole electrode row (second row from the top in FIG. 14), through-hole electrode portions 61u2, 63u1, 64u2, through-hole electrode portions 61v2, 63v1, 64v2, and through-hole electrode portions 61w2, 63w1, 64w2 Includes a cathode terminal (K) 46b, a first anode terminal (A) 46a1, and a second anode terminal (A) 46a2 of the first diode components 41u1 to 41w1, which are individually inserted from the main surface 60x side of the wiring board 60. For example, they are electrically and mechanically connected by the solder material 26.

  In the fourth through-hole electrode row (the second row below in FIG. 14), the through-hole electrode portions 62u1, 63u3, 65u1, the through-hole electrode portions 62v1, 63v3, 65v1, and the through-hole electrode portions 62w1, 63w3, 65w1 The first anode terminal (A) 46a1, the cathode terminal (K) 46b, and the second anode terminal (A) 46a2 of the second diode components 41u2 to 41w2 are individually inserted from the main surface 60x side of the wiring board 60. For example, they are electrically and mechanically connected by the solder material 26.

One electrode of the capacitor components C1, C2, and C3 is electrically and mechanically connected to the electrode pad portions 61up, 61vp, and 61wp by, for example, a solder material 26a (see FIG. 15). Further, the other electrodes of the capacitor components C1, C2, C3 are electrically and mechanically connected to the electrode pad portions 62up, 62vp, 62wp, for example, by a solder material 26a.
In each of the power conversion units 12u, 12v, 12w, one electrode of the capacitor parts C1, C2, C3 is electrically connected to the first main power supply wiring 69P via the first wiring 61u, 61v, 61w, and the other The electrode is connected to the second main power supply wiring 69N via the second wiring 62u, 62v, 62w, the first and second anode terminals 46a, 46a2 of the second diode parts 41u2, 41v2, 41w2, and the fifth wiring 65u, 65v, 65w. And are electrically connected. That is, the capacitor components C1, C2, and C3 are connected between the first main power supply wiring 69P and the second main power supply wiring 69N.

  The second main terminal (C) 36b of the first semiconductor device 31u1, 31v1, 31w1 is one of the first main power supply wiring 69P and the capacitor components C1, C2, C3 via the first wiring 61u, 61v, 61w. It is electrically connected to the electrode. That is, the second main terminal (C) 36b of the first semiconductor devices 31u1, 31v1, 31w1 is connected between the first main power supply wiring 69P and the capacitor components C1, C2, C3.

The first main terminals (E) 36a of the second semiconductor devices 31u2, 31v2, 31w2 are connected to the second main power supply wiring 69N and the second diode components 41u2, 41v2, 41w2 via the fifth wirings 65u, 65v, 65w. The capacitor component C1, which is electrically connected to the second anode terminal 46a2, and is connected to the second diode components 41u2, 41v2, 41w2 via the second and first anode terminals 46a2, 46a1, and the second wirings 62u, 62v, 62w. It is electrically connected to the other electrode of C2 and C3. That is, the first main terminal (E) 36a of the second semiconductor devices 31u2, 31v2, 31w2 is connected between the second main power supply wiring 69N and the capacitor components C1, C2, C3.
The first semiconductor devices 31u1, 31v1, 31w1 and the second semiconductor devices 31u2, 31v2, 31w2 are mounted on the wiring board 60 so as to face each other in the Y direction.
The capacitor components C1, C2, and C3 are mounted in a region between the first semiconductor devices 31u1, 31v1, and 31w1 and the second semiconductor devices 31u2, 31v2, and 31w2 on the wiring board 60.

  In each power converter 12u, 12v, 12w, the first diode components 41u1, 41v1, 41w1 and the second diode components 41u2, 41v2, 41w2 are the first semiconductor devices 31u1, 31v1, 31w1, and the second semiconductor devices 31u2, 31v2, respectively. In the direction (Y direction) in which 31w2 is opposed, the first semiconductor devices 31u1, 31v1, 31w1 and the second semiconductor devices 31u2, 31v2, 31w2 are opposed to each other outside the capacitor components C1, C2, C3. And mounted on the wiring board 60.

The cathode terminal 46b of the first diode component 41u1, 41v1, 41w1 is connected to the second main terminal 36b of the first semiconductor device 31u 1 , 31v 1 , 31w 1 and the capacitor component C1 via the first wiring 61u, 61v, 61w. , C2 and C3 are electrically connected. That is, the cathode terminal 46b of the first diode component 41u1, 41v1, 41w1 is connected between the second main terminal 36b of the first semiconductor device 31u1, 31v1, 31w1 and the capacitor component C1, C2, C3.

In the second diode parts 41u2, 41v2, 41w2, the first anode terminal 46a1 is electrically connected to the other electrodes of the capacitor parts C1, C2, C3 via the second wirings 62u, 62v, 62w, and the second diode parts 41u2, 41v2, 41w2 The anode terminal 46a2 is electrically connected to the first main terminal (E) 36a of the second semiconductor devices 31u2, 31v2, and 31w2 via the fifth wirings 65u, 65v, and 65w. That is, the first and second anode terminals 46a1, 46a2 of the second diode parts 41u2, 41v2, 41w2 are connected to the first main terminal (E) 36a of the second semiconductor devices 31u2, 31v2, 31w2, and the capacitor parts C1, C2, respectively. Connected to C3.
The capacitor components C1, C2, and C3 are mounted in a region between the first semiconductor devices 31u1, 31v1, and 31w1 and the second semiconductor devices 31u2, 31v2, and 31w2 on the wiring board 60.

In each power converter 12u, 12v, 12w, the cathode terminal 46b of the first diode component 41u1, 41v1, 41w1 and the first anode terminal 46a1 of the second diode component 41u2, 41v2, 41w2 are arranged to face each other. . The capacitor components C1, C2, and C3 are disposed between the cathode terminals 46b of the first diode components 41u1, 41v1, and 41w1 and the first anode terminals 46a1 of the second diode components 41u2, 41v2, and 41w2.
Each power conversion unit 12u, 12v, in 12w, the cathode terminal 46b of the first diode component 41u1~41w1 are opposed to each other with the first semiconductor second main terminal 36b of the device 31U1,31v1,31w 1. The second anode terminals 46a2 of the second diode components 41u 2 to 41w 2 are arranged opposite to the first main terminals 36a of the second semiconductor devices 31u2 to 31w2.

In each power converter 12u, 12v, 12w, the first anode terminal 46a1 of the first diode component 41u1, 41v1, 41w1 and the cathode terminal 46b of the second diode component 41u2, 41v2, 41w2 are arranged to face each other, and The third wirings 63u, 63v, and 63w are electrically connected to each other.
The second anode terminal 64a2 of the first diode component 41u1, 41v1, 41w1 and the first main terminal 36a of the first semiconductor device 31u1, 31v1, 31w1 are arranged to face each other, and the fourth wirings 64u to 64w are connected. Are electrically connected to each other.

The cathode terminals 46b of the second diode components 41u2, 41v2, and 41w2 and the second main terminals 36b of the second semiconductor devices 31u2, 31v2, and 31w2 are disposed to face each other and via the third wirings 63u to 63w. They are electrically connected to each other.
Here, the first diode parts 41u1, 41v1, 41w1 and the second diode parts 41u2, 41v2, 41w2 are arranged so that terminals having different functions (first anode terminal 46a1, cathode terminal 46b) face each other. 16, the first diode parts 41u1, 41v1, 41w1 and the second diode parts 41u2, 41v2, 41w2 face each other so that the heat radiating surfaces 45b are located outside in the Y direction, and further in the X direction. This can be easily implemented by shifting the position by one terminal.

  In each power conversion unit 12u, 12v, 12w, as described above, the second main terminal (C) 36b of the first semiconductor devices 31u1-31w1 is between the first main power supply wiring 69P and the capacitor components C1, C2, C3. The first main terminals (E) 36a of the second semiconductor devices 31u2 to 31w2 are connected between the second main power supply wiring 69N and the capacitor components C1, C2, and C3. Therefore, the capacitor components C1, C2, and C3 are used as snubber capacitors as in the first embodiment.

Next, the heat dissipation structure of the power conversion device 10B according to the second embodiment of the present invention will be described with reference to FIGS. 12, 15, and 16. FIG.
As shown in FIGS. 12 and 15, each of the first semiconductor devices 31 u 1 to 31 w 1 has the first heat conductive plate 22 on the side opposite to the fixed plate 21 side of the first portion 22 a of the first heat conductive plate 22. It arrange | positions along a longitudinal direction (X direction). Further, each of the first diode components 41u1 to 41w1 is not illustrated in detail between the fixed plate 21 and the first portion 22a of the first heat conducting plate 22, but is similar to the first semiconductor devices 31u1 to 31w1. Are arranged along the longitudinal direction (X direction) of the fixed plate 21 and the first heat conductive plate 22. Also, each of the second diode components 41u2 to 41w2 is not illustrated in detail between the fixed plate 21 and the first portion 23a of the second heat conducting plate 23, but is similar to the first semiconductor devices 31u1 to 31w1. Are arranged along the longitudinal direction (X direction) of the fixed plate 21 and the second heat conducting plate 23. Also, each of the second semiconductor devices 31u2 to 31w2 is along the longitudinal direction (X direction) of the second heat conductive plate 23 on the side opposite to the fixed plate 21 side of the first portion 23a of the second heat conductive plate 23. Are arranged.

  Insulation is provided between the first portion 22a of the first heat conducting plate 22 and the first semiconductor devices 31u1 to 31w1, and between the first portion 22a of the first heat conducting plate 22 and the first diode components 41u1 to 41w1. A sheet 24 is interposed. Also, between the first portion 23a of the second heat conductive plate 23 and the second semiconductor devices 31u2 to 31w2, between the first portion 23a of the second heat conductive plate 23 and the second diode components 41u2 to 41w2, Insulating sheets 24 are respectively interposed.

  As shown in FIG. 15, the first semiconductor device 31u1, the insulating sheet 24, the first portion 22a of the first heat conducting plate 22, the insulating sheet 24, and the first diode component 41u1 are arranged in this order from the first semiconductor device 31u1 side. The screw member 28 is fixed to the first fixing surface 21a of the fixing plate 21 by screws. Similarly, in the second semiconductor device 31u2, the insulating sheet 24, the first portion 23a of the second heat conducting plate 23, the insulating sheet 24, and the second diode component 41u2, the screw member 28 from the second semiconductor device 31u2 side in this order. Thus, the fixing plate 21 is fixed to the second fixing surface 21b of the fixing plate 21 by screws. This screwing and fixing includes screw through holes 38c (see FIG. 17) provided in the first and second semiconductor devices 31u1 and 31u2, screw through holes (not shown) provided in the insulating sheet 24, the first And screw through holes (not shown) provided in the first portions 22a and 23a of the second heat conductive plates 22 and 23, and screw through holes 38c (provided in the first and second diode components 41u1 and 41u2). 9), the screw member 28 is inserted.

  Although not shown in detail, the first semiconductor devices 31v1 and 31w1 and the first diode components 41v1 and 41w1 also have the same structure as that of the first semiconductor device 31u1 and the first diode component 41u1. The first portion 22 a and the insulating sheet 24 are screwed together and fixed to the first fixing surface 21 a of the fixing plate 21 by a screw member 28. Similarly to the second semiconductor device 31u2 and the second diode component 41u2, the second semiconductor device 31v2 and 31w2 and the second diode component 41v2 and 41w2 also have the first portion 23a and the insulating sheet 24 of the second heat conducting plate 23. At the same time, the screw member 28 is fixed to the second fixing surface 21b of the fixing plate 21 by screws.

  The second portion 22b of the first heat conducting plate 22 is screwed and fixed to the main surface 20x of the base member 20 by a screw member 29 from the second portion 22b. Similarly, the second portion 23b of the second heat conducting plate 23 is also screwed and fixed to the main surface 20x of the base member 20 by the screw member 29 from the second portion 23b side. Although not shown between the second portions 22b and 23b of the first and second heat conducting plates 22 and 23 and the main surface 20x of the base member 20, as in the first embodiment described above, A paste-like thermally conductive material is interposed.

  As shown in FIG. 16, the first semiconductor device 31 u 1 includes a first portion of the first heat conducting plate 22 such that the heat radiating surface 35 b of the heat radiating plate 35 is connected to the first portion 22 a of the first heat conducting plate 22. It is fixed to 22a. The first semiconductor device 31u1 includes the first portion of the first heat conducting plate 22 with the insulating sheet 24 interposed between the heat radiating surface 35b of the heat radiating plate 35 and the first portion 22a of the first heat conducting plate 22. The heat radiating plate 35 is electrically insulated and separated from the first heat conducting plate 22.

  The first diode component 41u1 is fixed to the first portion 22a of the first heat conducting plate 22 so that the heat radiating surface 45b of the heat radiating plate 45 is connected to the first portion 22a of the first heat conducting plate 22. The first diode component 41u1 includes the first portion of the first heat conducting plate 22 with the insulating sheet 24 interposed between the heat radiating surface 45b of the heat radiating plate 45 and the first portion 22a of the first heat conducting plate 22. The heat radiating plate 45 is electrically insulated and separated from the first heat conducting plate 22.

  Also in the second semiconductor device 31u2, the heat radiating surface 35b of the heat radiating plate 35 is fixed to the second heat conductive plate 23 so as to be connected to the first portion 23a of the second heat conductive plate 23. Also in the second semiconductor device 31u2, the first heat conductive plate 23 of the second heat conducting plate 23 is interposed with the insulating sheet 24 interposed between the heat radiating surface 35b of the heat radiating plate 35 and the first portion 23a of the second heat conducting plate 23. The heat radiating plate 35 is electrically insulated and separated from the second heat conducting plate 23.

  Also in the second diode component 41u2, the heat radiating surface 45b of the heat radiating plate 45 is fixed to the second heat conducting plate 23 so as to be connected to the first portion 23a of the second heat conducting plate 23. Also in the second diode component 41 u 2, the first heat conducting plate 23 of the second heat conducting plate 23 is interposed with the insulating sheet 24 interposed between the heat radiating surface 45 b of the heat radiating plate 45 and the first portion 23 a of the second heat conducting plate 23. The heat radiating plate 45 is electrically insulated and separated from the second heat conducting plate 23.

Although not shown in detail, even when the first semiconductor device 31v1,31w1 and the first diode component 41v1,41w1 odor, like the first semiconductor device 31u1 and the first diode component 41U1, the heat radiating plate 35, 45 It is fixed to the first portion 22a of the first heat conducting plate 22 with the insulating sheet 24 interposed between the heat radiating surfaces 35b, 45b and the first portion 22a of the first heat conducting plate 22, 45 is electrically insulated from the second heat conductive plate 23. Similarly to the second semiconductor device 31u2 and the second diode component 41u2, the second semiconductor devices 31v2 and 31w2 and the second diode component 41v2 and 41w2 have the heat radiation surfaces 35b and 45b of the heat radiation plates 35 and 45 and the second heat. The insulating sheet 24 is interposed between the first portion 23a of the conductive plate 23 and the first portion 23a of the second heat conductive plate 23, and the heat radiating plates 35 and 45 are separated from the second heat conductive plate 23. It is electrically isolated.

  As described above, the power conversion device 10B according to the second exemplary embodiment of the present invention includes the second main terminals (C) 36b of the first semiconductor devices 31u1, 31v1, and 31w1 in the power conversion units 12u, 12v, and 12w. Is connected between the first main power supply wire 69P and the capacitor components C1, C2, C3, and the first main terminal (E) 36a of the second semiconductor device 31u2, 31v2, 31w2 is connected to the second main power supply wire 69N and the capacitor component. It is connected between C1, C2, and C3. The capacitor components C1, C2, and C3 are arranged in the region between the first semiconductor devices 30u1, 30v1, and 30w1 and the second semiconductor devices 30u2, 30v2, and 30w2 that are mounted on the wiring substrate 60 so as to face each other. Has been implemented.

  Further, in the power conversion device 10B according to the second embodiment of the invention, the first diode parts 41u1, 41v1, 41w1 and the second diode parts 41u2, 41v2, 41w2 are the second semiconductor parts 31u1, 31v1, 31w1 and the second semiconductor parts 31u1, 31v1, 31w1. Inside the first semiconductor devices 31u1, 31v1, 31w1 and the second semiconductor devices 31u2, 31v2, 31w2 and outside the capacitor components C1, C2, C3 in the direction facing the semiconductor devices 31u2, 31v2, 31w2 (Y direction) Are mounted on the wiring board 60 so as to face each other.

  Further, in the power conversion device 10B according to the second embodiment of the present invention, the cathode terminal 46b of the first diode component 41u1, 41v1, 41w1 is the second main terminal 36b of the first semiconductor device 31u1, 31v1, 31w1, The first and second anode terminals 46a1, 46a2 of the second diode parts 41u2, 41v2, 41w2 are connected between the capacitor parts C1, C2, C3, and the first main terminals of the second semiconductor devices 31u2, 31v2, 31w2. (E) It is connected between 36a and capacitor components C1, C2, and C3. The capacitor components C1, C2, and C3 are mounted in a region between the first diode components 41u1, 41v1, and 41w1 and the second diode components 41u2, 41v2, and 41w2 on the wiring board 60.

Therefore, according to the power conversion device 10B according to the second embodiment of the present invention, in the power conversion units 12u, 12v, and 12w constituting the inverter circuit 11, as in the first embodiment described above, Thus, compared with the case where the capacitor components C1, C2, C3 are arranged outside the region between the first diode components 41u1-41w1 and the second diode components 41u2-41w2, the first main power supply wiring 69P and the second Wirings (first wirings 61u, 61v, 61w, second wirings 62u, 62v, 62w, fifth wirings 65u, 65v, 65w) that connect to the main power supply wiring 69N via capacitor parts C1, C2, C3 it is possible to shorten the length, the first and second half-conductor device 31u1,31u2 in the power converter unit 12u, the first and second diode component 41u1,4 u2, and the inductance of the round current path including a capacitor component C1, first and second half-conductor device 31v1,31v2 in the power converter unit 12v, the first and second diode component 41V1,41v2, and capacitor components C2 Reducing the inductance of the current path of the circuit including the first and second semiconductor devices 31w1 and 31w2, the first and second diode components 41w1 and 41w2, and the capacitor component C3 in the power converter 12w, respectively. be able to. As a result, as electronic components constituting the inverter circuit 11, the first and second semiconductor devices 31u1 to 31w1 and 31u2 to 31w2 including the switching element 15 and the first and second diode components 41u1 to 41w1 including the diode element 16 are included. , 41u2 to 41w2, the power conversion device 10B according to the second embodiment of the present invention can achieve the same effects as those of the power conversion device 10A according to the first embodiment of the present invention described above.

  The capacitor components C1, C2, and C3 are preferably disposed between the cathode terminals 46b of the first diode components 41u1 to 41w1 and the first anode terminals 46a1 of the second diode components 41u2 to 41w2. In this case, the cathode terminals 46b of the first diode parts 41u1 to 41w1 and the first anode terminals 46a1 of the second diode parts 41u2 to 41w2 can be connected with the capacitor parts C1, C2, and C3 in the shortest time. It is possible to further reduce the inductance of the current path in the power converters 12u, 12v, and 12w.

  In the power conversion device 10B according to the second embodiment of the present invention, the first semiconductor device 31u1 and other semiconductor devices (first semiconductor devices 31v1 and 31w1, second semiconductor devices 31u2 to 31w2) are as shown in FIG. In addition, heat generated in the semiconductor chip 33 due to the operation of the switching element 15 is transmitted to the heat radiating plate 35. In the first semiconductor devices 31u1 to 31w1, the first heat conduction plate is configured such that the heat radiation surface 35b of the heat radiation plate 35 is connected to the first portion 22a of the first heat conduction plate 22, as shown in FIG. 22 is fixed to the first portion 22a. Also in the second semiconductor devices 31 u 2 to 31 w 2, the heat radiating surface 35 b of the heat radiating plate 35 is connected to the first portion 23 a of the second heat conducting plate 23, so that the first portion 23 a of the second heat conducting plate 23 is connected. It is fixed.

Therefore, according to the power conversion device 10B according to the second embodiment of the present invention, the heat transferred to the heat radiation plate 35 of the first semiconductor devices 31u1 to 31w1 passes through the insulating sheet 24 and the first heat conduction plate 22. Then, it is transmitted to the base member 20 and diffused to the outside from the convex fins 20b of the base member 20, so that the heat dissipation effect can be enhanced.
Further, the first diode component 41u1 and other diode components (first diode components 41v1, 41w1, second diode components 41u2-41w2) are generated in the semiconductor chip 34 by the operation of the diode element 16, as shown in FIG. Heat is transmitted to the heat radiating plate 45. In the first diode parts 41u1 to 41w1, as shown in FIG. 16, the heat dissipation plate 45 is connected to the first portion 22a of the first heat conductive plate 22 so that the first heat conductive plate 45b is connected to the first heat conductive plate. 22 is fixed to the first portion 22a. Also in the second diode components 41u2 to 41w2, the heat radiating surface 45b of the heat radiating plate 45 is connected to the first portion 23a of the second heat conducting plate 23 so as to be connected to the first portion 23a of the second heat conducting plate 23. It is fixed.

Therefore, according to the power conversion device 10B according to the second embodiment of the present invention, the heat transferred to the heat radiating plate 45 of the first diode components 41u1 to 41w1 passes through the insulating sheet 24 and the first heat conducting plate 22. Then, it is transmitted to the base member 20 and diffused to the outside from the convex fins 20b of the base member 20, so that the heat dissipation effect can be enhanced.
Thereby, the power converter device 10B with a low inductance and a high heat dissipation effect and the electric motor 1 including the same can be provided.

In the power conversion device 10B according to the second embodiment of the present invention, the first semiconductor devices 31u1 to 31w1 are configured such that the heat dissipation surface 35b of the heat dissipation plate 35 and the first portion of the first heat conductive plate 22 are shown in FIG. It is fixed to the first portion 22a of the first heat conducting plate 22 with the insulating sheet 24 interposed between them and the heat radiating plate 35 is electrically insulated and separated from the first heat conducting plate 22. Also in the second semiconductor devices 31 u 2 to 31 w 2, the second heat conduction plate 23 has the insulating sheet 24 interposed between the heat radiation surface 35 b of the heat radiation plate 35 and the first portion 23 a of the second heat conduction plate 23. The heat radiating plate 35 is electrically insulated and separated from the second heat conducting plate 23. Therefore, according to the power conversion device 10B according to the second embodiment of the present invention, the heat radiation plate 35 of the first semiconductor devices 31u1 to 31w1 and the heat radiation plate 35 of the second semiconductor devices 31u2 to 31w2 are fixed at different potentials. Even so, the heat of the first semiconductor devices 31u1 to 31w1 and the second semiconductor devices 31u2 to 31w2 is transmitted from the heat sink 35 to the base member 20 via the first heat conductive plate 22 and the second heat conductive plate 23. Can do.

Further, as shown in FIG. 16, the first diode components 41 u 1 to 41 w 1 are in the state where the insulating sheet 24 is interposed between the heat radiating surface 45 b of the heat radiating plate 45 and the first portion 22 a of the first heat conducting plate 22. The first heat conducting plate 22 is fixed to the first portion 22 a, and the heat radiating plate 45 is electrically insulated and separated from the first heat conducting plate 22. Also in the second diode components 41 u 2 to 41 w 2, the second heat conducting plate 2 3 with the insulating sheet 24 interposed between the heat radiating surface 45 b of the heat radiating plate 45 and the first portion 23 a of the second heat conducting plate 23. The heat radiating plate 45 is electrically insulated and separated from the second heat conducting plate 23. Therefore, according to the power conversion device 10B according to the second embodiment of the present invention, the heat radiation plate 45 of the first diode components 41u1 to 41w1 and the heat radiation plate 45 of the second diode components 41u2 to 41w2 are fixed at different potentials. Even so, the heat of the first diode parts 41u1 to 41w1 and the second diode parts 41u2 to 41w2 is transmitted from the heat radiating plate 45 to the base member 20 via the first heat conducting plate 22 and the second heat conducting plate 23. Can do.
Thereby, the power converter device 10B with a low inductance and a high heat dissipation effect and the electric motor 1 including the same can be provided.

In the second embodiment of the present invention, the first portion 22a of the first heat conductive plate 22, the heat sink of the first electronic component (the heat sink 35 of the first semiconductor devices 31u1 to 31w1, the first diode component 41u1). Between the first portion 23a of the second heat conductive plate 23 and the heat sink of the second electronic component (the heat sink 35 of the second semiconductor devices 31u2-31w2, the second diode components 41u2-41w2). In this case, the insulating sheet 24 is interposed between each of the first and second heat conducting plates 22 and 23 as shown in FIG. You may interpose between the parts 22b and 23b and the main surface 20x of the base member 20.

(Third embodiment)
The power conversion device 10C according to the third embodiment of the present invention has substantially the same configuration as that of the power conversion device 10B according to the second embodiment of the present invention. The arrangement of the diode parts and the wiring pattern of the wiring board are different.
That is, in the power conversion device 10B according to the second embodiment of the present invention described above, as shown in FIG. 14, the first diode components 41u1 to 41w1 and the second semiconductor device 31u2 are arranged inside the first semiconductor devices 31u1 to 31w1. The second diode components 41u2 to 41w2 are respectively arranged inside .about.31w2. On the other hand, in the power conversion device 10C according to the third embodiment of the present invention, as shown in FIG. 20, the first diode components 41u1 to 41w1 and the second semiconductor device 31u2 are provided outside the first semiconductor devices 31u1 to 31w1. It has the structure which has arrange | positioned the 2nd diode components 41u2-41w2 on the outer side of -31w2. Hereinafter, a power conversion device 10C according to a third embodiment of the present invention will be described with reference to FIGS. 20 and 21 mainly using a semiconductor device, a diode component, and a wiring board.

Note that FIG. 20 is a layout view seen through from the back side of the wiring board as in FIG. FIG. 21 shows the first and second semiconductor devices 31u1 and 31u2, the first and second diode components 41u1 and 41u2, and the capacitor component that constitute the U-phase power conversion unit 12u as in the second embodiment. The mounting state of C1 is exemplarily shown.
As illustrated in FIG. 21, the power conversion device 10 </ b> C according to the third embodiment of the present invention replaces the wiring substrate 60 illustrated in FIG. 15 with four support columns 25 on the main surface 20 x side of the base member 20. A supported wiring board 70 is provided. The wiring board 70 has a main surface 70x and a back surface 70y located on opposite sides in the thickness direction.

  As illustrated in FIGS. 20 and 21, the wiring board 70 includes a first main power supply wiring 79 </ b> P to which a first reference voltage (for example, 300 V) is applied, and a second reference voltage (for example, a potential lower than the first reference voltage). 0V) is applied to the second main power supply wiring 79N. Further, the wiring board 70 corresponds to the number of the power conversion units 12u, 12v, 12w, the first wirings 71u, 71v, 71w, the second wirings 72u, 72v, 72w, and the third wirings 73u, 73v, 73w. And fourth wirings 74u, 74v, 74w, fifth wirings 75u, 75v, 75w, through-hole electrodes 76u, 76v, 76w, and through-hole electrodes 77u, 77v, 77w.

The first main power supply wiring 79P and the second main power supply wiring 79N extend along the X direction and are spaced apart from each other in the Y direction. The first main power supply wiring 79P corresponds to the positive electrode line 19P in FIG. 13, and the second main power supply wiring 79N corresponds to the negative electrode line 19N in FIG.
The first wirings 71u, 71v, 71w have one end connected to the first main power supply wiring 79P and the other end side having electrode pad portions 71up, 71vp, 71wp. The first wirings 71u to 71w are formed between the through hole electrode portions 71u1, 71v1, 71w1 and the through holes between the first main power supply wiring 79P on one end side and the electrode pad portions 71up, 71vp, 71wp on the other end side. It has electrode parts 71u2, 71v2, 71w2. The first wirings 71u to 71w extend from the first main power supply wiring 79P toward the second main power supply wiring 79N.

  The second wirings 72u, 72v, 72w are connected at one end to the second main power supply wiring 79N and have electrode pad portions 72up, 72vp, 72wp at the other end. The second wirings 72u to 72w include through-hole electrode portions 72u1, 72v1, 72w1 and through-holes between the first main power supply wiring 79P on one end side and the electrode pad portions 72up, 72vp, 72wp on the other end side. It has electrode parts 72u2, 72v2, and 72w2. The second wirings 72u to 72w extend along the Y direction between the first main power supply wiring 79P and the second main power supply wiring 79N.

  The third wirings 73u, 73v, 73w have through-hole electrode portions 73u1, 73v1, 73w1 on one end side, and have through-hole electrode portions 73u2, 73v2, 73v2 on the other end side. The third wirings 73u to 73w include through-hole electrode portions 73u3, 73v3, 73w3 and through-hole electrodes between the through-hole electrode portions 73u1 to 73w1 on one end side and the through-hole electrode portions 73u2 to 73v3 on the other end side. It has electrode parts 73u4, 73v4, 73w4. The third wirings 73u to 73w extend along the Y direction between the first main power supply wiring 79P and the second main power supply wiring 79N.

The fourth wirings 74u, 74v, 74w have through-hole electrode portions 74u1, 74v1, 74w1 on one end side. The fifth wirings 75u, 75v, 75w have through-hole electrode portions 75u1, 75v1, 75w1 on one end side. A control signal is input to the fourth wirings 74u to 74w and the fifth wirings 75u to 75w from the gate drive circuit 13 shown in FIG.
The 1st wiring 71u-71w and the 2nd wiring 72u-72w comprise the input stage side of each power converter 12u-12w. The third wiring 73u~73w constitutes the output stage of the power-varying section 12U～12w.

The through-hole electrode portions 71u1 and 73u1 and the through-hole electrode 76u, the through-hole electrode portions 71v1 and 73v1 and the through-hole electrode 76v, the through-hole electrode portions 71w1 and 73w1, and the through-hole electrode 76w are provided for each power conversion unit 12u, 12v, and 12w. The first through-hole electrode rows (the first row from the top in FIG. 20) are arranged in a row along the X direction.
The through-hole electrode portions 72u1 and 73u2 and the through-hole electrode 77u, the through-hole electrode portions 72v1 and 7vu2 and the through-hole electrode 77v, the through-hole electrode portions 72w1 and 73w2, and the through-hole electrode 77w are included in the power conversion units 12u, 12v, and 12w. They are arranged in a row along the X direction every time, and constitute a second through-hole electrode row (the first row from the bottom in FIG. 20). The first and second through-hole electrode rows are separated from each other in the Y direction.

The through-hole electrode portions 71u2, 73u3, 74u1, the through-hole electrode portions 71v2, 73v3, 74v1, and the through-hole electrode portions 71w2, 73w, 74w1 are arranged in a row along the X direction for each of the power conversion portions 12u, 12v, 12w. The third through-hole electrode row (second row from the top in FIG. 20) is arranged.
The through-hole electrode portions 72u2, 73u4, 75u1, the through-hole electrode portions 72v2, 73v4, 75v1, and the through-hole electrode portions 72w2, 73w4, 75w1 are arranged in a row along the X direction, and the fourth through-hole electrode row (Second row from the bottom in FIG. 20). The third and fourth through-hole electrode rows are disposed between the first through-hole electrode and the second through-hole electrode, and are separated from each other in the Y direction.

  The through-hole electrode portions 71u1, 71v1, 71w1 are arranged at positions facing each other with the through-hole electrode portions 71u2, 71v2, 71w2 in the Y direction. Further, the through-hole electrode portions 71u2, 71v2, 71w2 are disposed at positions facing the through-hole electrode portions 72u2, 72v2, 72w2 in the Y direction. Further, the through-hole electrode portions 72u2, 72v2, 72w2 are arranged at positions facing the through-hole electrode portions 72u1, 72v1, 72w1 in the Y direction.

  The through-hole electrode portions 73u1, 73v1, and 73w1 are disposed opposite to the through-hole electrode portions 73u3, 73v3, and 73w3 in the Y direction. Further, the through-hole electrode portions 73u3, 73v3, and 73w3 are arranged at positions facing each other with the through-hole electrode portions 73u4, 73v4, and 73w4 in the Y direction. Further, the through-hole electrode portions 73u4, 73v4, and 73w4 are arranged at positions facing the through-hole electrode portions 73u2, 73v2, and 73w2 in the Y direction.

The through-hole electrodes 76u, 76v, and 76w are arranged at positions facing each other with the through-hole electrode portions 74u1, 74v1, and 74w1 in the Y direction. The through-hole electrodes 77u, 77v, 77w are arranged at positions facing each other with the through-hole electrode portions 75u1, 75v1, 75w1 in the Y direction.
The electrode pad portions 71up, 71vp, 71wp are arranged at positions facing each other in the Y direction with the electrode pad portions 72up, 72vp, 72wp. The electrode pad portions 71up, 71vp, 71wp and the electrode pad portions 72up, 72vp, 72wp are disposed between the through-hole electrode portions 71u2, 71v2, 71w2, and the through-hole electrode portions 72u2, 72v2, 72w2. Yes.

  In the first through-hole electrode row (the first row from the top in FIG. 2), the through-hole electrode portions 71u1 and 73u1 and the through-hole electrode 76u, the through-hole electrode portions 71v1 and 73v1, the through-hole electrode 76v, and the through-hole electrode In the parts 71w1 and 73w1 and the through-hole electrode 76w, the cathode terminal 46b, the second anode terminal 46a2, and the first anode terminal 46a1 of the first diode parts 41u1 to 41w1 are respectively connected to the wiring board for each of the power conversion parts 12u, 12v, and 12w. 70 are individually inserted from the main surface 70x side, and are electrically and mechanically connected by, for example, a solder material 26 (see FIG. 21).

  In the second through-hole electrode row (the first row from the bottom in FIG. 20), the through-hole electrode portions 72u1 and 73u2 and the through-hole electrode 77u, the through-hole electrode portions 72v1 and 73v2, the through-hole electrode 77v, and the through-hole electrode The parts 72w1 and 73w2 and the through-hole electrode 77w include a second anode terminal (A) 46a2, a cathode terminal (K) 46b, and a first anode terminal of the second diode components 41u2 to 41w2 for each of the power converters 12u, 12v, and 12w. (A) Each of 46 a 1 is individually inserted from the main surface 70 x side of the wiring board 70, and is electrically and mechanically connected by, for example, the solder material 26.

In the third through-hole electrode row (second row from the top in FIG. 20), the through-hole electrode portions 71u2, 73u3, 74u1, the through-hole electrode portions 71v2, 73v3, 74v1, and the through-hole electrode portions 71w2, 73w3, 74w1 The second main terminal (C) 36b, the first main terminal (E) 36a, and the control terminal (G) 36c of the first semiconductor devices 31u1 to 31w 1 are connected to the wiring board for each of the power conversion units 12u, 12v, and 12w. 70 are individually inserted from the main surface 70x side, and are electrically and mechanically connected by, for example, the solder material 26.

  In the fourth through-hole electrode row (second row from the bottom in FIG. 20), through-hole electrode portions 72u2, 73u4, 75u1, through-hole electrode portions 72v2, 73v4, 75v1, and through-hole electrode portions 72w2, 73w4, 75w1 The first main terminal (E) 36a, the second main terminal (C) 36b, and the control terminal (G) 36c of the second semiconductor devices 31u2 to 31w2 are connected to the wiring board for each of the power conversion units 12u, 12v, and 12w. 70 are individually inserted from the main surface 70x side, and are electrically and mechanically connected by, for example, the solder material 26.

One electrode of the capacitor components C1, C2, C3 is electrically and mechanically connected to the electrode pad portions 71up, 71vp, 71wp by, for example, a solder material 26a (see FIG. 21). Further, the other electrodes of the capacitor components C1, C2, and C3 are electrically and mechanically connected to the electrode pad portions 72up, 72vp, and 72wp by, for example, a solder material 26a.
In each of the power conversion units 12u, 12v, 12w, one electrode of the capacitor parts C1, C2, C3 is electrically connected to the first main power supply wiring 79P via the first wiring 71u, 71v, 71w, and the other The electrodes are electrically connected to the second main power supply wiring 79N through the second wirings 72u, 72v, 72w. That is, the capacitor components C1, C2, and C3 are connected between the first main power supply wiring 79P and the second main power supply wiring 79N.

  The second main terminal (C) 36b of the first semiconductor device 31u1, 31v1, 31w1 is one of the first main power supply wiring 79P and the capacitor components C1, C2, C3 via the first wiring 71u, 71v, 71w. It is electrically connected to the electrode. That is, the second main terminal (C) 36b of the first semiconductor devices 31u1, 31v1, 31w1 is connected between the first main power supply wiring 79P and the capacitor components C1, C2, C3.

  The first main terminal (E) 36a of the second semiconductor devices 31u2, 31v2, 31w2 is connected to the other of the second main power supply wiring 79N and the capacitor components C1, C2, C3 via the second wirings 72u, 72v, 72w. It is electrically connected to the electrode. That is, the first main terminals (E) 36a of the second semiconductor devices 31u2, 31v2, 31w2 are connected between the second main power supply wiring 79N and the capacitor components C1, C2, C3.

The first semiconductor devices 31u1, 31v1, 31w1 and the second semiconductor devices 31u2, 31v2, 31w2 are mounted on the wiring board 70 so as to face each other in the Y direction.
The capacitor components C1, C2, and C3 are mounted in a region between the first semiconductor devices 31u1, 31v1, and 31w1 and the second semiconductor devices 31u2, 31v2, and 31w2 on the wiring board 70.

  In each power converter 12u, 12v, 12w, the first diode components 41u1, 41v1, 41w1 and the second diode components 41u2, 41v2, 41w2 are connected to the first semiconductor devices 31u1, 31v1, 31w1, and the second semiconductor devices 31u2, 31v2, respectively. In the facing direction (Y direction) in which 31w2 faces, it is mounted on the wiring board 70 so as to face each other outside the first semiconductor devices 31u1, 31v1, 31w1 and the second semiconductor devices 31u2, 31v2, 31w2.

  The cathode terminal 46b of the first diode component 41u1, 41v1, 41w1 is connected to the first main power supply line 79P and the second main terminal 36b of the first semiconductor devices 31u1, 31v1, 31w1 via the first lines 71u, 71v, 71w. And are electrically connected. That is, the cathode terminal 46b of the first diode component 41u1, 41v1, 41w1 is connected between the first main power supply wiring 79P and the second main terminal 36b of the first semiconductor device 31u1, 31v1, 31w1.

  The second anode terminal 46a2 of the second diode component 41u2, 41v2, 41w2 is connected to the first main power line 79N and the first main terminals of the second semiconductor devices 31u2, 31v2, 31w2 via the second lines 72u, 72v, 72w. The terminal 36a is electrically connected. That is, the second anode terminal 46a2 of the second diode component 41u2, 41v2, 41w2 is connected between the second main power supply wiring 79N and the first main terminal 36a of the second semiconductor device 31u2, 31v2, 31w2.

  In each power conversion unit 12u, 12v, 12w, the cathode terminal 46b of the first diode component 41u1, 41v1, 41w1 is disposed opposite to the second main terminal 36b of the first semiconductor device 31u1, 34v1, 31w1. . The second anode terminals 46a2 of the second diode components 41u2, 41v2, 41w2 are arranged opposite to the first main terminals 36a of the second semiconductor devices 31u2, 31v2, 31w2.

In each power converter 12u, 12v, 12w, the first main terminal (E) 36a of the first semiconductor devices 31u1, 31v1, 31w1, and the second main terminal (C) 36b of the second semiconductor devices 31u2, 31v2, 31w2 Are arranged opposite to each other and are electrically connected via third wirings 73u, 73v, 73w. Further, the second anode terminal 46a2 of the first diode component 41u1, 41v1, 41w1 and the first main terminal 36a of the first semiconductor device 31u1, 31v1, 31w1 are arranged to face each other, and the third wiring 73u, 73v, 73w are electrically connected. The cathode terminals 46b of the second diode components 41u2, 41v2, and 41w2 and the second main terminals 36b of the second semiconductor devices 31u 2 , 31v 2 , and 31w 2 are disposed to face each other, and the third wirings 73u and 73v are disposed. , 73w are electrically connected.

Here, in the first semiconductor device 31u1 and the first diode component 41u1, the second main terminal (C) 36b and the cathode terminal 46b, and the first main terminal (E) 36a and the second anode terminal 36a2 face each other. For example, the heat radiation plate 35 of the first semiconductor device 31u1 and the heat radiation plate 45 of the first diode component 41u1 face each other.

In each power conversion unit 12u, 12v, 12w, as described above, the second main terminals (C) 36b of the first semiconductor devices 31u1-31w1 are connected between the first main power supply wiring 79P and the capacitor components C1, C2, C3. The first main terminals (E) 36a of the second semiconductor devices 31u2 to 31w2 are connected between the second main power supply wiring 79N and the capacitor components C1, C2, and C3. Therefore, the capacitor parts C1, C2, and C3 are used as snubber capacitors.

As shown in FIGS. 20 and 21, in the power conversion device 10C according to the third embodiment of the present invention, the first diode components 41u1 to 41w1 are arranged outside the first semiconductor devices 31u1 to 31w1, and the second semiconductor The second diode components 41u2 to 41w2 are arranged outside the devices 31u2 to 31w2.
Therefore, as shown in FIG. 21, the first diode component 41u1, the insulating sheet 24, the first portion 22a of the first heat conducting plate 22, the insulating sheet 24, and the semiconductor device 31u1 are arranged in this order from the first diode component 41u1 side. The screw member 28 is fixed to the first fixing surface 21a of the fixing plate 21 by screws. Similarly, the second diode component 41u2, the insulating sheet 24, the first portion 23a of the second heat conducting plate 23, the insulating sheet 24, and the second semiconductor device 31u2 are arranged in this order by the screw member 28 from the second diode component 41u2 side. The first fixing surface 21a of the fixing plate 21 is collectively fixed with screws.

  Although not shown in detail, the first semiconductor devices 31v1 and 31w1 and the first diode components 41v1 and 41w1 also have the same structure as that of the first semiconductor device 31u1 and the first diode component 41u1. The first portion 22 a and the insulating sheet 24 are screwed together and fixed to the first fixing surface 21 a of the fixing plate 21 by a screw member 28. Similarly to the second semiconductor device 31u2 and the second diode component 41u2, the second semiconductor device 31v2 and 31w2 and the second diode component 41v2 and 41w2 also have the first portion 23a and the insulating sheet 24 of the second heat conducting plate 23. At the same time, the screw member 28 is fixed to the second fixing surface 21b of the fixing plate 21 by screws.

  As shown in FIG. 21, the first semiconductor device 31 u 1 includes a first portion of the first heat conducting plate 22 such that the heat radiating surface 35 b of the heat radiating plate 35 is connected to the first portion 22 a of the first heat conducting plate 22. It is fixed to 22a. The first semiconductor device 31u1 includes the first portion of the first heat conducting plate 22 with the insulating sheet 24 interposed between the heat radiating surface 35b of the heat radiating plate 35 and the first portion 22a of the first heat conducting plate 22. The heat radiating plate 35 is electrically insulated and separated from the first heat conducting plate 22.

  The first diode component 41u1 is fixed to the first portion 22a of the first heat conducting plate 22 so that the heat radiating surface 45b of the heat radiating plate 45 is connected to the first portion 22a of the first heat conducting plate 22. The first diode component 41u1 includes the first portion of the first heat conducting plate 22 with the insulating sheet 24 interposed between the heat radiating surface 45b of the heat radiating plate 45 and the first portion 22a of the first heat conducting plate 22. The heat radiating plate 45 is electrically insulated and separated from the first heat conducting plate 22.

Also in the second semiconductor device 31u2, the heat radiating surface 35b of the heat radiating plate 35 is fixed to the second heat conductive plate 23 so as to be connected to the first portion 23a of the second heat conductive plate 23. Then, in the second semiconductor device 31U2, while interposing an insulating sheet 24 between the first portion 23a of the heat radiating surface 35b and the second thermal conductive plate 23 of the heat sink 35 of the second heat conducting plate 23 first The heat radiating plate 35 is electrically insulated and separated from the second heat conducting plate 23.

Also in the second diode component 41u2, the heat radiating surface 45b of the heat radiating plate 45 is fixed to the second heat conducting plate 23 so as to be connected to the first portion 23a of the second heat conducting plate 23. Also in the second diode component 41u2, the second heat conductive plate 23 of the second heat conductive plate 23 is interposed between the heat radiating surface 45b of the heat radiating plate 45 and the first portion 23a of the second heat conductive plate 23. The heat radiating plate 45 is electrically insulated and separated from the second heat conducting plate 23.

  Although not shown in detail, the first semiconductor devices 31v1 and 31w1 and the first diode components 41v1 and 41w1 also dissipate heat from the heat sinks 35 and 45, as with the first semiconductor devices 31u1 and the first diode components 41u2. The insulating sheet 24 is interposed between the surfaces 35b, 45b and the first portion 22a of the first heat conducting plate 22, and is fixed to the first portion 22a of the first heat conducting plate 22, and the heat radiating plates 35, 45 are disposed. Is electrically insulated from the second heat conducting plate 23. Similarly to the second semiconductor device 31u2 and the second diode component 41u2, the second semiconductor devices 31v2 and 31w2 and the second diode component 41v2 and 41w2 have the heat radiation surfaces 35b and 45b of the heat radiation plates 35 and 45 and the second heat. The insulating sheet 24 is interposed between the second portion 23a of the conductive plate 23 and is fixed to the first portion 23a of the second heat conductive plate 23, and the heat radiating plates 35 and 45 are separated from the second heat conductive plate 23. It is electrically isolated.

  As described above, the power conversion device 10C according to the third embodiment of the present invention includes the second main terminals (C) 36b of the first semiconductor devices 31u1, 31v1, 31w1 in the power conversion units 12u, 12v, 12w. Is connected between the first main power supply wiring 79P and the capacitor components C1, C2, C3, and the first main terminal (E) 36a of the second semiconductor devices 31u2, 31v2, 31w2 is connected to the second main power supply wiring 79N and the capacitor components. It is connected between C1, C2, and C3. In addition, the capacitor components C1, C2, and C3 are arranged in a region between the first semiconductor devices 31u1, 31v1, and 31w1 and the second semiconductor devices 31u2, 31v2, and 31w2 mounted on the wiring substrate 70 so as to face each other. Has been implemented. The capacitor components C1, C2, and C3 are connected to the second main terminal (C) 36b of the first semiconductor devices 31u1, 31v1, and 31w1 and the first main terminal (E) 36a of the second semiconductor devices 31u2, 31v2, and 31w2. Arranged between.

In the power conversion device 10C according to the third embodiment of the present invention, the cathode terminals 46b of the first diode components 41u1, 41v1, 41w1 are connected to the first main power supply wiring 79P and the first semiconductor devices 31u1, 31v1, 31w1. The second anode terminal 46a2 of the second diode component 41u2, 41v2, 41w2 is connected between the second main terminal 36b and the second main power supply wiring 79N and the first main terminal ( E) It is connected between 36a.
Therefore, also in the power conversion device 10C according to the third embodiment of the present invention, similarly to the power conversion device 10A according to the first embodiment of the present invention described above, low inductance and downsizing can be achieved. .

  In the power conversion device 10C according to the third embodiment of the present invention, the first diode components 41u1 to 41w1 are disposed outside the first semiconductor devices 31u1 to 31w1, and the second diodes are disposed outside the second semiconductor devices 31u2 to 31w2. The components 41u2 to 41w2 are arranged. The first semiconductor devices 31u1 to 31w1 and the first diode components 41u1 to 41w1 are fixed to the first portion 22a of the first heat conducting plate 22 in the same manner as in the second embodiment, although the order is different. . Also in the second semiconductor devices 31u2 to 31w2 and the second diode components 41u2 to 41w2, the order is different, but the second semiconductor devices 31u2 to 31w2 are fixed to the first portion 22a of the second heat conducting plate 23 in the same manner as in the second embodiment. Yes.

Therefore, also in the power conversion device 10C according to the third embodiment of the present invention, the heat dissipation effect can be enhanced similarly to the above-described power conversion device 10B according to the second embodiment of the present invention. It is possible to provide the power conversion device 10C having a high heat dissipation effect and the electric motor 1 including the same.
In the third embodiment of the present invention, the first portion 22a of the first heat conducting plate 22, the heat sink of the first electronic component (the heat sink 35 of the first semiconductor devices 31u1 to 31w1 , the first diode component 41). between the heat radiation plate 45 of u1 to 41w1 , the first portion 23a of the second heat conductive plate 23 , the heat radiation plate of the second electronic component (the heat radiation plate 35 of the second semiconductor devices 31u2 to 31w2, the second diode component 41u2). ˜41w2 of the heat radiating plate 45), the case where the insulating sheet 24 is interposed between the first and second heat conducting plates 22 and 23 as shown in FIG. You may interpose between 2nd part 22b , 23b and the main surface 20x of the base member 20. FIG.

(Fourth embodiment)
The power conversion device 10D according to the fourth embodiment of the present invention has substantially the same configuration as that of the power conversion device 10B according to the second embodiment of the present invention. The configuration and the wiring pattern of the wiring board are different. Hereinafter, a power conversion device 10D according to a fourth embodiment of the present invention will be described with reference to FIGS. 22 to 25 mainly using diode components and a wiring board.

  As shown in FIG. 22, in the power conversion device 10D according to the fourth embodiment of the present invention, the U-phase power conversion unit 12u configuring the inverter circuit 11 includes first and second semiconductor devices 31u1 and 31u2. The first and second diode parts 42u1 and 42u2 and the capacitor part C1 are included. The V-phase power converter 12v constituting the inverter circuit 11 also includes the first and second semiconductor devices 31v1 and 31v2, the first and second diode components 42v1 and 42v2, and the capacitor component C2. It has become. The W-phase power converter 12w also includes first and second semiconductor devices 31w1 and 31w2, first and second diode components 42w1 and 42w2, and a capacitor component C3.

Next, the 1st diode components 42u1-42w1 and the 2nd diode components 42u2-42w2 which comprise each power converter 12u-12w of the inverter circuit 11 are demonstrated using FIG.
Since the first diode parts 42u1 to 42w1 and the second diode parts 42u2 to 42w2 use products having the same function and the same structure, the first diode parts 42u1 are illustrated as in the second embodiment. I will explain it.

As shown in FIGS. 25 (a) and 25 (b), the first diode component 42u1 has substantially the same configuration as the first diode component 41u1 of the second embodiment described above. Is different. That is, the first diode component 42u1, rather than two anode terminal has a configuration having one of the anode terminal 46 a. The anode terminal 46 a is formed by a lead extending inside and outside the sealing body 48, and one end side is sealed by the sealing body 48. One end side of the anode terminal 46 a is electrically connected to the main surface electrode 44 a of the semiconductor chip 44 through the bonding wire 47 inside the sealing body 48. The first diode component 42u1 and the other diode components (42v1, 42w1, 42u2 to 42w2) are also composed of the TO247 type in which the insulation of the screw through hole 48c is ensured, similarly to the first diode component 41u1 described above. ing.

Next, the wiring pattern of the wiring board 80 will be described, and the first semiconductor devices 31u1 to 31w1, the second semiconductor devices 31u2 to 31w2, the first diode components 42u1 to 42w1, the second diode components 42u2 to 42w2, and the capacitor component C1. ˜C3 will be described with reference to FIGS. 23 and 24.
FIG. 23 is a layout view seen through from the back side of the wiring board, as in FIG. FIG. 24 shows the first and second semiconductor devices 31u1 and 31u2, the first and second diode components 42u1 and 42u2, and the capacitor constituting the U-phase power converter 12u, as in the second embodiment. The mounting state of the component C1 is exemplarily shown.

As shown in FIG. 23, the power conversion device 10 </ b> D according to the fourth embodiment of the present invention replaces the wiring board 60 shown in FIG. 15 with four struts 25 on the main surface 20 x side of the base member 20. A supported wiring board 80 is provided. The wiring board 80 has a main surface 80x and a back surface 80y located on opposite sides in the thickness direction.
As shown in FIGS. 23 and 24, the wiring board 80 includes a first main power supply wiring 89P to which a first reference voltage (eg, 300 V) is applied, and a second reference voltage (eg, a potential lower than the first reference voltage). 0V) is applied to the second main power supply wiring 89N. In addition, the wiring board 80 corresponds to the number of the power conversion units 12u, 12v, 12w, the first wirings 81u, 81v, 81w, the second wirings 82u, 82v, 82w, and the third wirings 83u, 83v, 83w. And fourth wirings 84u, 84v, 84w and fifth wirings 85u, 85v, 85w.

The first main power supply wiring 89P and the second main power supply wiring 89N extend along the X direction and are spaced apart from each other in the Y direction. The first main power supply wiring 89P corresponds to the positive electrode line 19P shown in FIG. 22, and the second main power supply wiring 89N corresponds to the negative electrode line 19N shown in FIG.
The first wirings 81u, 81v, 81w are connected at one end side to the first main power supply wiring 89P and have electrode pad portions 81up, 81vp, 81wp at the other end side. The first wirings 81u to 81w are formed between the through hole electrode portions 81u1, 81v1, 81w1 and the through holes between the first main power supply wiring 89P on one end side and the electrode pad portions 81up, 81vp, 81wp on the other end side. It has electrode parts 81u2, 81v2, and 81w2. The first wirings 81u to 81w extend from the first main power supply wiring 89P toward the second main power supply wiring 89N.

The second wirings 82u, 82v, and 82w are connected to the second main power supply wiring 89N at one end side and have electrode pad portions 82up, 82vp, and 82wp at the other end side. The second wirings 82u to 82w are formed between the through hole electrode portions 82u1, 82v1, 82w1 and the through holes between the second main power supply wiring 89N on one end side and the electrode pad portions 82up, 82vp, 82wp on the other end side. It has electrode parts 82u2, 82v2, and 82w2. The second wiring 82u~82w extends from the second main power lines 89N toward the first main supply line 8 9P.

The third wirings 83u, 83v, 83w have through-hole electrode portions 83u1, 83v1, 83w1 on one end side and through-hole electrode portions 83u2, 83v2, 83v2 on the other end side. The third wirings 83u to 83w are formed between the through-hole electrode portions 83u3, 83v3, and 83w3 between the through-hole electrode portions 83u1 to 83w1 on one end side and the through-hole electrode portions 83u2 to 83w1 on the other end side. It has electrode parts 83u4, 83v4, 83w4. The third wiring 83u~83w, in between the first main supply line 89P and second main power supply lines 89N, and extends along the Y direction.

The fourth wirings 84u, 84v, 84w have through-hole electrode portions 84u1, 84v1, 84w1 on one end side. The fifth wires 85u, 85v, 85w have through-hole electrode portions 85u1, 85v1, 85w1 on one end side. A control signal is input to the fourth wirings 84u to 84w and the fifth wirings 85u to 85w from the gate drive circuit 13 shown in FIG.
First wiring 81u~81w and the second wiring 82u~82w constitutes the input stage of the power conversion unit 12U～12w. The third wiring 83u~83w constitutes the output stage of the power conversion unit 12U～12w.

The through-hole electrode portions 81u1, 83u1, 84u1, the through-hole electrode portions 81v1, 83v1, 84v1, and the through-hole electrode portions 81w1, 83w1, 84w1 are arranged in a row along the X direction for each of the power conversion portions 12u, 12v, 12w. A first through-hole electrode row (first row from the top in FIG. 23) is formed.
The through-hole electrode portions 82u1, 83u2, 85u1, the through-hole electrode portions 82v1, 83v2, 85v1, and the through-hole electrode portions 82w1, 83w2, 85w1 are arranged in a row along the X direction for each of the power conversion portions 12u, 12v, 12w. The second through-hole electrode row (the first row from the bottom in FIG. 23) is arranged. The first and second through-hole electrode rows are separated from each other in the Y direction.

The through-hole electrode portions 81u2 and 83u3, the through-hole electrode portions 81v2 and 83v3, and the through-hole electrode portions 81w2 and 83w3 are arranged in a line along the X direction for each of the power conversion portions 12u, 12v, and 12w, and the third A through-hole electrode row (second row from the top in FIG. 23) is formed.
The through-hole electrode portions 82u2 and 83u4, the through-hole electrode portions 82v2 and 83v4, and the through-hole electrode portions 82w2 and 83w4 are arranged in a row along the X direction, and the fourth through-hole electrode row (in FIG. From the second column). The third and fourth through-hole electrode rows are disposed between the first through-hole electrode and the second through-hole electrode, and are separated from each other in the Y direction.

The through-hole electrode portions 81u1, 81v1, 81w1 are arranged to face each other with the through-hole electrode portions 83u2, 83v2, 83w2 in the Y direction.
The through-hole electrode portions 84u1, 84v1, and 84w1 are disposed at positions facing the through-hole electrode portions 81u2, 81v2, and 81w2 in the Y direction. Further, the through-hole electrode portions 81u2, 81v2, and 82w2 are disposed at positions facing the through-hole electrode portions 82u2, 82v2, and 82w2 in the Y direction. Further, the through-hole electrode portions 82u2, 82v2, and 82w2 are disposed at positions facing the through-hole electrode portions 82u1, 82v1, and 82w1 in the Y direction.

  The through-hole electrode portions 83u1, 83v1, and 83w1 are disposed at positions facing the through-hole electrode portions 83u3, 83v3, and 83w3. Further, the through-hole electrode portions 83u1, 83v1, and 83w1 are disposed at positions facing the through-hole electrode portions 83u4, 83v4, and 83w4 in the Y direction. Further, the through-hole electrode portions 83u3, 83v3, and 83w3 are arranged at positions facing the through-hole electrode portions 85u1, 85v1, and 85w1 in the Y direction.

  The electrode pad portions 81up, 81vp, 81wp are arranged at positions facing each other in the Y direction with the electrode pad portions 82up, 82vp, 82wp. The electrode pad portions 81up, 81vp, 81wp and the electrode pad portions 82up, 82vp, 82wp are disposed between the through-hole electrode portions 81u2, 81v2, 81w2, and the through-hole electrode portions 82u2, 82v2, 82w2. Yes.

  In the first through-hole electrode row (the first row from the top in FIG. 14), the through-hole electrode portions 81u1, 83u1, 84u1, the through-hole electrode portions 81v1, 83v1, 84v1, and the through-hole electrode portions 81w1, 83w1, 84w1 The second main terminal (C) 36b, the first main terminal (E) 36a, and the control terminal (G) 36c of the first semiconductor devices 31u1 to 31w1 are wired for each of the power conversion units 12u, 12v, and 12w. The substrates 80 are individually inserted from the main surface 80x side, and are electrically and mechanically connected by, for example, the solder material 26 (see FIG. 24).

  In the second through-hole electrode row (the first row from the bottom in FIG. 23), the through-hole electrode portions 82u1, 83u2, 85u1, the through-hole electrode portions 82v1, 83v2, 85v1, and the through-hole electrode portions 82w1, 83w2, 85w1 The first main terminal (E) 36a, the second main terminal (C) 36b, and the control terminal (G) 36c of the second semiconductor devices 31u2 to 31w2 are individually inserted from the main surface 80x side of the wiring board 80. For example, they are electrically and mechanically connected by a solder material 26.

In the third through-hole electrode row (second row from the top in FIG. 23), the through-hole electrode portions 81u2 and 83u3, the through-hole electrode portions 81v2 and 83v3, and the through-hole electrode portions 81w2 and 83w3 include the first diodes. the cathode terminal (K) 46b of the part 42U1～42w1, each of the anode terminal (a) 46 a are inserted separately from the main surface 80x side of the wiring board 80, for example by solder material 26 is electrically and mechanically connected ing.

  In the fourth through-hole electrode row (second row below in FIG. 23), the through-hole electrode portions 82u2 and 83u4, the through-hole electrode portions 82v2 and 83v4, and the through-hole electrode portions 82w2 and 83w4 include a second diode. The anode terminals (A) 46a and cathode terminals (K) 46b of the components 42u2 to 42w2 are individually inserted from the main surface 80x side of the wiring board 80, and are electrically and mechanically connected by, for example, the solder material 26. Yes.

  One electrode of the capacitor components C1, C2, and C3 is electrically and mechanically connected to the electrode pad portions 81up, 81vp, and 81wp by, for example, a solder material 26a (see FIG. 15). The other electrodes of the capacitor components C1, C2, and C3 are electrically and mechanically connected to the electrode pad portions 82up, 82vp, and 82wp by, for example, a solder material 26a.

  In each of the power converters 12u, 12v, 12w, one electrode of the capacitor parts C1, C2, C3 is electrically connected to the first main power supply wiring 89P via the first wiring 81u, 81v, 81w, and the other The electrodes are electrically connected to the second main power supply wiring 89N through the second wirings 82u, 82v, and 82w. That is, the capacitor components C1, C2, and C3 are connected between the first main power supply wiring 89P and the second main power supply wiring 89N.

  The second main terminal (C) 36b of the first semiconductor device 31u1, 31v1, 31w1 is one of the first main power supply wiring 89P and the capacitor components C1, C2, C3 via the first wiring 81u, 81v, 81w. It is electrically connected to the electrode. That is, the second main terminal (C) 36b of the first semiconductor devices 31u1, 31v1, 31w1 is connected between the first main power supply wiring 89P and the capacitor components C1, C2, C3.

The first main terminal (E) 36a of the second semiconductor devices 31u2, 31v2, 31w2 is connected to the other of the second main power supply wiring 89N and the capacitor components C1, C2, C3 via the second wirings 82u, 82v, 82w. It is electrically connected to the electrode. That is, the first main terminal (E) 36a of the second semiconductor devices 31u2, 31v2, 31w2 is connected between the second main power supply wiring 89N and the capacitor components C1, C2, C3.
The first semiconductor devices 31u1, 31v1, 31w1 and the second semiconductor devices 31u2, 31v2, 31w2 are mounted on the wiring board 80 so as to face each other in the Y direction.
The capacitor components C1, C2, and C3 are mounted in a region between the first semiconductor devices 31u1, 31v1, and 31w1 and the second semiconductor devices 31u2, 31v2, and 31w2 on the wiring board 80.

  In each power converter 12u, 12v, 12w, the first diode parts 42u1, 42v1, 42w1 and the second diode parts 42u2, 42v2, 42w2 are the first semiconductor devices 31u1, 31v1, 31w1, and the second semiconductor devices 31u2, 31v2, respectively. In the facing direction (Y direction) where 31w2 is opposed, the first semiconductor devices 31u1, 31v1, 31w1 and the second semiconductor devices 31u2, 31v2, 31w2 are opposed to each other outside the capacitor components C1, C2, C3. And mounted on the wiring board 80.

The cathode terminal 46b of the first diode component 42u1, 42v1, 42w1 is connected to the second main terminal 36b of the first semiconductor device 31u 1 , 31v 1 , 31w 1 and the capacitor component C1 via the first wirings 81u, 81v, 81w. , C2 and C3 are electrically connected. That is, the cathode terminal 46b of the first diode component 42u1, 42v1, 42w1 is connected between the second main terminal 36b of the first semiconductor device 31u1, 31v1, 31w1 and the capacitor component C1, C2, C3.

The anode terminal 46a of the second diode component 42u2, 42v2, 42w2 is connected to the first main terminal 36a of the second semiconductor device 31u2, 31v2, 31w2 and the capacitor component C1, C2, via the second wirings 82u, 82v, 82w. It is electrically connected to the other electrode of C3. That is, the anode terminal 46a of the second diode component 42u2, 42v2, 42w2 is connected between the first main terminal 36a of the second semiconductor device 31u2, 31v2, 31w2 and the capacitors C1, C2, C3.
The capacitor components C1, C2, and C3 are mounted in the region between the first diode components 42u1, 42v1, and 42w1 and the second diode components 42u2, 42v2, and 42w2 of the wiring board 80.

In each power converter 12u, 12v, 12w, the cathode terminal 46b of the first diode component 42u1, 42v1, 42w1 and the anode terminal 46a of the second diode component 42u2, 42v2, 42w2 are arranged to face each other. The capacitor component C1, C2, C3 is disposed between the anode terminal 46 a of the cathode terminal 46b of the first diode component 42u1,42v1,42w1 a second diode component 42U2,42v2,42w2.

In each power conversion unit 12u, 12v, 12w, the cathode terminal 46b of the first diode component 42u1, 42v1, 42w1 is disposed to face the control terminal 36c of the first semiconductor device 31u1, 31v1, 31w1. The anode terminal 46 a of the second diode component 42u2,42v2,42w2 is disposed opposite to the first main terminal 36a of the second semiconductor device 31U2,31v2,31w2, second wiring 82u, 82v, and 82w through Are electrically connected.

In each power converter 12u, 12v, 12w, the anode terminal 46a of the first diode component 42u1, 42v1, 42w1 and the cathode terminal 46b of the second diode component 42u2, 42v2, 42w2 are arranged to face each other, and the third wiring They are electrically connected via 83u, 83v, 83w.
Further, the anode terminal 46a of the first diode component 42u1, 42v1, 42w1 and the second main terminal 36b of the first semiconductor device 31u1, 31v1, 31w1 are arranged to face each other, via the third wirings 83u, 83v, 83w. Are electrically connected.

The cathode terminals 46b of the second diode components 42u2, 42v2, and 42w2 are disposed to face the control terminals 36c of the second semiconductor devices 31u2, 31v2, and 31w2, and are connected via the third wirings 83u, 83v, and 83w. Are electrically connected to the second main terminals 36b of the second semiconductor devices 31u2, 31v2, 31w2.
In each power conversion unit 12u, 12v, 12w, as described above, the second main terminal (C) 36b of the first semiconductor device 31u1-31w1 is between the first main power supply wiring 89P and the capacitor components C1, C2, C3. The first main terminals (E) 36a of the second semiconductor devices 31u2 to 31w2 are connected between the second main power supply wiring 89N and the capacitor components C1, C2, and C3. Therefore, the capacitor parts C1, C2, and C3 are used as snubber capacitors.

As shown in FIGS. 23 and 24, the power conversion device 10D according to the fourth embodiment of the present invention is similar to the power conversion device 10B according to the second embodiment of the present invention described above. The first diode component 42u1 is arranged inside 31u1, and the second diode component 42u2 is arranged inside the second semiconductor device 31u2.
Therefore, as shown in FIG. 24, the first semiconductor device 31u1, the insulating sheet 24, the first portion 22a of the first heat conducting plate 22, the insulating sheet 24, and the first diode component 42u1 are arranged in this order. A screw member 28 from the side is fixed to the first fixing surface 21a of the fixing plate 21 by screws. Similarly, the second semiconductor device 31u2, the insulating sheet 24, the first portion 23a of the second heat conducting plate 23, the insulating sheet 24, and the second diode component 42u2 are arranged in this order by the screw member 28 from the second semiconductor device 31u2 side. The second fixing surface 21b of the fixing plate 21 is collectively fixed with screws.

  Although not shown in detail, the first semiconductor devices 31v1 and 31w1 and the first diode components 42v1 and 42w1 also have the same structure as the first semiconductor device 31u1 and the first diode component 42u1. The first portion 22 a and the insulating sheet 24 are screwed together and fixed to the first fixing surface 21 a of the fixing plate 21 by a screw member 28. Similarly to the second semiconductor device 31u2 and the second diode component 42u2, the second semiconductor devices 31v2 and 31w2 and the second diode component 42v2 and 42w2 also have the first portion 23a and the insulating sheet 24 of the second heat conducting plate 23. At the same time, the screw member 28 is fixed to the second fixing surface 21b of the fixing plate 21 by screws.

  As shown in FIG. 24, the first semiconductor device 31 u 1 includes a first portion of the first heat conducting plate 22 such that the heat radiating surface 35 b of the heat radiating plate 35 is connected to the first portion 22 a of the first heat conducting plate 22. It is fixed to 22a. The first semiconductor device 31u1 includes the first portion of the first heat conducting plate 22 with the insulating sheet 24 interposed between the heat radiating surface 35b of the heat radiating plate 35 and the first portion 22a of the first heat conducting plate 22. The heat radiating plate 35 is electrically insulated and separated from the first heat conducting plate 22.

  The first diode component 42 u 2 is fixed to the first portion 22 a of the first heat conducting plate 22 so that the heat radiating surface 45 b of the heat radiating plate 45 is connected to the first portion 22 a of the first heat conducting plate 22. The first diode component 42u1 includes the first portion of the first heat conductive plate 22 with the insulating sheet 24 interposed between the heat radiating surface 45b of the heat radiating plate 45 and the first portion 22a of the first heat conductive plate 22. The heat radiating plate 45 is electrically insulated and separated from the first heat conducting plate 22.

  Also in the second semiconductor device 31u2, the heat radiating surface 35b of the heat radiating plate 35 is fixed to the second heat conductive plate 23 so as to be connected to the first portion 23a of the second heat conductive plate 23. Also in the second semiconductor device 31 u 2, the second heat conductive plate 23 of the second heat conductive plate 23 is disposed with the insulating sheet 24 interposed between the heat radiating surface 35 b of the heat radiating plate 35 and the first portion 23 a of the second heat conductive plate 23. The heat radiating plate 35 is electrically insulated and separated from the second heat conducting plate 23.

  Also in the second diode component 42u2, the heat radiating surface 45b of the heat radiating plate 45 is fixed to the second heat conducting plate 23 so as to be connected to the first portion 23a of the second heat conducting plate 23. Also in the second diode component 42u2, the second heat conductive plate 23 of the second heat conductive plate 23 is interposed with the insulating sheet 24 interposed between the heat radiating surface 45b of the heat radiating plate 45 and the first portion 23a of the second heat conductive plate 23. The heat radiating plate 45 is electrically insulated and separated from the second heat conducting plate 23.

  In the power conversion device 10D according to the fourth embodiment of the present invention, as described above, the second main terminal (C) 36b of the first semiconductor devices 31u1, 31v1, 31w1 is the first main power supply wiring 89P and the capacitor component C1. , C2, C3, and the first main terminal (E) 36a of the second semiconductor devices 31u2, 31v2, 31w2 is connected between the second main power supply wiring 89N and the capacitor components C1, C2, C3. ing. The capacitor components C1, C2, and C3 are arranged in the region between the first semiconductor devices 31u1, 31v1, and 31w1 and the second semiconductor devices 31u2, 31v2, and 30w2 mounted on the wiring substrate 80 so as to face each other. Has been implemented.

  Further, in the power conversion device 10D according to the fourth embodiment of the present invention, the first diode components 42u1, 42v1, 42w1 and the second diode components 42u2, 42v2, 42w2 are the first semiconductor devices 31u1, 31v1, 31w1 and the second In the opposing direction (Y direction) of the semiconductor devices 31u2, 31v2, and 31w2, they are inside the first semiconductor devices 31u1, 31v1, 31w1 and the second semiconductor devices 31u2, 31v2, 31w2 and outside the capacitor components C1, C2, C3. It is mounted on the wiring board 80 so as to face each other.

In the power converter 10D according to the fourth embodiment of the present invention, the cathode terminals 46b of the first diode components 42u1, 42v1, 42w1 are the second main terminals (C) of the first semiconductor devices 31u1, 31v1, 31w1. 36b and the capacitor parts C1, C2, C3, and the anode terminal 46a of the second diode parts 42u2, 42v2, 42w2 is the first main terminal (E) 36a of the second semiconductor devices 31u2, 31v2, 31w2. And the capacitor parts C1, C2, and C3. The capacitor components C1, C2, and C3 are mounted in the region between the first diode components 42u1, 42v1, and 42w1 and the second diode components 42u2, 42v2, and 42w2 of the wiring board 80.
Therefore, also in the power conversion device 10D according to the fourth embodiment of the present invention, as in the power conversion device 10B according to the second embodiment of the present invention described above, the inductance can be reduced and the size can be reduced. .

  The power conversion device 10D according to the fourth embodiment of the present invention has a first diode component inside the first semiconductor devices 31u1 to 31w1 in the same manner as the power conversion device 10B according to the second embodiment of the present invention described above. 42u1 to 42w1 are arranged, and the second diode parts 42u2 to 42w2 are arranged inside the second semiconductor devices 31u2 to 31w2. The first semiconductor devices 31u1 to 31w1 and the first diode components 42u1 to 42w1 are fixed to the first portion 22a of the first heat conducting plate 22 in the same manner as in the second embodiment described above. Further, the second semiconductor devices 31u2 to 31w2 and the second diode components 42u2 to 42w2 are also fixed to the first portion 23a of the second heat conducting plate 23 in the same manner as in the second embodiment.

Therefore, also in the power conversion device 10D according to the fourth embodiment of the present invention, the heat dissipation effect can be enhanced in the same manner as the power conversion device 10B according to the second embodiment of the present invention described above. It is possible to provide the power conversion device 10D having a high heat dissipation effect and the electric motor 1 including the same.
In the fourth embodiment of the present invention, the first portion 22a of the first heat conducting plate 22, the heat sink of the first electronic component (the heat sink 35 of the first semiconductor devices 31u1 to 31w1, the first diode component 42u1). Between the first portion 23a of the second heat conducting plate 23 and the heat sink of the second electronic component (the heat sink 35 of the second semiconductor devices 31u2 to 31w2, the second diode components 42u2 to 42w2). In this case, the insulating sheet 24 is interposed between each of the first and second heat conducting plates 22 and 23 as shown in FIG. You may interpose between the parts 22b and 23b and the main surface 20x of the base member 20.

(Fifth embodiment)
The power conversion device 10E according to the fifth embodiment of the present invention has substantially the same configuration as that of the power conversion device 10B according to the second embodiment of the present invention. The configuration and the wiring pattern of the wiring board are different. Hereinafter, a power conversion device 10E according to a fifth embodiment of the present invention will be described with reference to FIGS.

  As shown in FIG. 26, in the power conversion device 10E according to the fifth embodiment of the present invention, the U-phase power conversion unit 12u configuring the inverter circuit 11 includes the first and second semiconductor devices 31u1 and 31u2. The first and second diode parts 43u1 and 43u2 and the capacitor part C1 are included. The V-phase power conversion unit 12v constituting the inverter circuit 11 also includes first and second semiconductor devices 31v1 and 31v2, first and second diode components 43v1 and 43v2, and a capacitor component C2. ing. The W-phase power conversion unit 12w constituting the inverter circuit 11 also includes first and second semiconductor devices 31w1 and 31w2, first and second diode components 43w1 and 43w2, and a capacitor component C3. ing.

Next, the 1st diode components 43u1-43w1 and the 2nd diode components 43u2-43w2 which comprise each power converter 12u-12w of the inverter circuit 11 are demonstrated using FIG.
Since the first diode parts 43u1 to 43w1 and the second diode parts 43u2 to 43w2 use products having the same function and the same structure, the first diode parts 43u1 are illustrated as in the second embodiment. I will explain it.

  As shown in FIGS. 29 (a) and 29 (b), the first diode component 43u1 has substantially the same configuration as the first diode component 41u1 of the second embodiment described above. Is different. That is, the first diode component 43u1 is configured to include two semiconductor chips 44. A diode element 16 is formed on each of the two semiconductor chips 44. Each of the two semiconductor chips 44 is fixed to the heat radiating plate 45 such that each back electrode 44c faces the element mounting surface 45a of the heat radiating plate 45. Connected regularly and mechanically. One end side of the first anode terminal 46 a 1 is electrically connected to the main surface electrode 44 a of one semiconductor chip 44 through the bonding wire 37 inside the sealing body 48. One end side of the second anode terminal 46 a 2 is electrically connected to the main surface electrode 44 a of the other semiconductor chip 44 through the bonding wire 37 inside the sealing body 48. That is, in each of the two diode elements 16, each anode region is independently electrically connected to the first anode terminal 46a1 and the second anode terminal 46a2, and each cathode region is electrically connected in parallel to the cathode terminal 46b. It is connected to the.

Also in the first diode component 43u1 and the other diode components (43v1, 43w1, 43u2 to 43w2), the insulation of the screw through hole 48c is ensured as in the first diode component 41u1 of the second embodiment described above. The TO247 type.
Next, the wiring pattern of the wiring board 90 will be described, and the first semiconductor devices 31u1 to 31w1, the second semiconductor devices 31u2 to 31w2, the first diode components 43u1 to 43w1, the second diode components 43u2 to 43w2, and the capacitor component C1. ˜C3 will be described with reference to FIGS. 27 and 28.

27 is a layout view seen through from the back side of the wiring board, as in FIG. FIG. 28 shows the first and second semiconductor devices 31u1 and 31u2, the first and second diode components 43u1 and 43u2, and the capacitor constituting the U-phase power converter 12u, as in the second embodiment. The mounting state of the component C1 is exemplarily shown.
As shown in FIG. 28, the power converter 10E according to the fifth embodiment of the present invention replaces the wiring board 60 shown in FIG. 15 with four support posts 25 on the main surface 20x side of the base member 20. A supported wiring board 90 is provided. The wiring board 90 has a main surface 90x and a back surface 90y located on opposite sides in the thickness direction.

  As shown in FIGS. 27 and 28, the wiring board 90 includes a first main power supply wiring 99P to which a first reference voltage (for example, 300 V) is applied, and a second reference voltage (for example, a potential lower than the first reference voltage). 0V) is applied to the second main power supply wiring 99N. Further, the wiring board 90 corresponds to the number of power conversion units 12u, 12v, 12w, the first wirings 91u, 91v, 91w, the second wirings 92u, 92v, 92w, and the third wirings 93u, 93v, 93w. And fourth wirings 94u, 94v, 94w, fifth wirings 95u, 95v, 95w, sixth wirings 96u, 96v, 96w, and seventh wirings 97u, 97v, 97w.

The first main power supply wiring 99P and the second main power supply wiring 99N extend along the X direction and are spaced apart from each other in the Y direction. First main power supply wiring 99P corresponds to positive electrode line 19P shown in FIG. 26, and second main power supply wiring 99N corresponds to negative electrode line 19N shown in FIG.
The first wirings 91u, 91v, 91w have one end connected to the first main power supply wiring 99P and the other end side having electrode pad portions 91up, 91vp, 91wp. The first wirings 91u to 91w are formed between the first main power supply wiring 99P on one end side and the electrode pad portions 91up, 91vp, 91wp on the other end side, and through-hole electrode portions 91u1, 91v1, 91w1. It has electrode portions 91u2, 91v2, and 91w2. The first wires 91u to 91w extend from the first main power supply wire 99P toward the second main power supply wire 99N.

The second wirings 92u, 92v, 92w have one end connected to the second main power supply wiring 99N and the other end side having electrode pad portions 92up, 92vp, 92wp. The second wirings 92u to 92w have through-hole electrode portions 92u1, 92v1, and 92w1 between the second main power supply wiring 99N on one end side and the electrode pad portions 92up to 92wp on the other end side. The second wiring 92u~92w extends from the second main power lines 99N toward the first main supply line 99P.

The third wirings 93u, 93v, 93w are connected to the fourth wirings 94u, 94v, 94w at one end side and have through-hole electrode portions 93u2, 93v2, 93v2 at the other end side. The third wirings 93u to 93w include through-hole electrode portions 93u1, 93v1, 93w1 between the fourth wirings 94u, 94v, 94w on one end side and the through-hole electrode portions 93u2, 93v2, 93w2 on the other end side. And through-hole electrode portions 93u3, 93v3, and 93w3. The third wiring 93u~93w, in between the first main supply line 99P and second main power supply lines 99N, and extends along the Y direction.

  The fourth wirings 94u, 94v, 94w have through-hole electrode portions 94u1, 94v1, 94w1 on one end side, and have through-hole electrode portions 94u2, 94v2, 94w2 on the other end side. In the fourth wirings 94u to 94w, one end sides of the third wirings 93u, 93v, and 93w are connected between the through-hole electrode portions 94u1, 94v1, and 94w1 and the through-hole electrode portions 94u2, 94v2, and 94w2.

  The fifth wirings 95u, 95v, and 95w have through-hole electrode portions 95u1, 95v1, and 95w1 on one end side, and have through-hole electrode portions 95u2, 95v2, and 95w2 on the other end side. In the fifth wires 95u to 95w, intermediate portions of the second wires 92u, 92v, and 92w are connected between the through-hole electrode portions 95u1, 95v1, and 95w1 and the through-hole electrode portions 95u2, 95v2, and 95w2. The fifth wirings 95u to 95w and the fourth wirings 94u to 94w extend between the first main power wiring 99P and the second main power wiring 99N.

The sixth wirings 96u, 96v, 96w have through-hole electrode portions 96u1, 96v1, 96w1 on one end side. The seventh wirings 97u, 97v, 97w have through-hole electrode portions 97u1, 97v1, 97w1 on one end side. Control signals are input to the sixth wirings 96u to 96w and the seventh wirings 97u to 97w from the gate drive circuit 13 shown in FIG.
The 1st wiring 91u-91w and the 2nd wiring 92u-92w comprise the input stage side of each electrode conversion part 12u-12w. The third wirings 93u to 93w constitute the output stage side of the electrode conversion units 12u to 12w.

The through-hole electrode portions 91u1, 94u1, 96u1, the through-hole electrode portions 91v1, 94v1, 96v1, and the through-hole electrode portions 91w1, 94w1, 96w1 are arranged in a row along the X direction for each of the power conversion portions 12u, 12v, 12w. A first through-hole electrode row (first row from the top in FIG. 27) is formed.
The through-hole electrode portions 93u2, 95u1, 97u1, the through-hole electrode portions 93v2, 95v1, 97v1, and the through-hole electrode portions 93w2, 95w1, 97w1 are arranged in a row along the X direction for each of the power conversion portions 12u, 12v, 12w. The second through-hole electrode row (the first row from the bottom in FIG. 27) is arranged. The first and second through-hole electrode rows are separated from each other in the Y direction.

The through-hole electrode portions 91u2, 93u1, 94u2, the through-hole electrode portions 91v2, 93v1, 94v2, and the through-hole electrode portions 91w2, 93w1, 94w2 are arranged in a row along the X direction for each of the power conversion portions 12u, 12v, 12w. The third through-hole electrode row (second row from the top in FIG. 27) is arranged.
The through-hole electrode portions 92u1, 93u3, 95u2, the through-hole electrode portions 92v1, 93v3, 95v2, and the through-hole electrode portions 92w1, 93w3, 95w2 are arranged in a row along the X direction, and the fourth through-hole electrode row (Second row from the bottom in FIG. 27). The third and fourth through-hole electrode rows are disposed between the first through-hole electrode row and the second through-hole electrode row, and are separated from each other in the Y direction.

  The through-hole electrode portions 91u1, 91v1, 91w1 are arranged to face each other with the through-hole electrode portions 91u2, 91v2, 91w2 in the Y direction. Further, the through-hole electrode portions 91u2, 91v2, 91w2 are disposed at positions facing the through-hole electrode portions 92u1, 92v1, 92w1 in the Y direction. Further, the through-hole electrode portions 92u1, 92v1, and 92w1 are arranged at positions facing each other with the through-hole electrode portions 97u1, 97v1, and 97w1 in the Y direction.

  The through-hole electrode portions 96u1, 96v1, and 96w1 are disposed at positions facing the through-hole electrode portions 93u1, 93v1, and 93w1 in the Y direction. Further, the through-hole electrode portions 93u1, 93v1, 93w1 are disposed at positions facing the through-hole electrode portions 93u3, 93v3, 93w3. Further, the through-hole electrode portions 93u3, 93v3, and 93w3 are disposed at positions facing the through-hole electrode portions 93u2, 93v2, and 93w2 in the Y direction.

The through-hole electrode portions 94u1, 94v1, and 94w1 are arranged at positions facing the through-hole electrode portions 94u2, 94v2, and 94w2 in the Y direction. The through-hole electrode portions 95u1, 95v1, and 95w1 are disposed at positions facing the through-hole electrode portions 95u2, 95v2, and 95w2 in the Y direction.
The electrode pad portions 91up, 91vp, 91wp are disposed at positions facing each other in the Y direction with the electrode pad portions 92up, 92vp, 92wp. The electrode pad portions 91up, 91vp, 91wp and the electrode pad portions 92up, 92vp, 92wp are arranged between the through-hole electrode portions 91u2, 91v2, 91w2, and the through-hole electrode portions 92u2, 92v2, 92w2. Yes.

  In the first through-hole electrode row (the first row from the top in FIG. 27), through-hole electrode portions 91u1, 94u1, 96u1, through-hole electrode portions 91v1, 94v1, 96v1, and through-hole electrode portions 91w1, 94w1, 96w1 The second main terminal (C) 36b, the first main terminal (E) 36a, and the control terminal (G) 36c of the first semiconductor devices 31u1 to 31w1 are wired for each of the power conversion units 12u, 12v, and 12w. The substrates 90 are individually inserted from the main surface 90x side, and are electrically and mechanically connected by, for example, a solder material 26 (see FIG. 28).

  In the second through-hole electrode row (the first row from the bottom in FIG. 27), the through-hole electrode portions 93u2, 95u1, 97u1, the through-hole electrode portions 93u2, 95u1, 97u1, and the through-hole electrode portions 93u2, 95u1, 97u1 The second main terminals (C) 36b, the first main terminals (E) 36a, and the control terminals (G) 36c of the second semiconductor devices 31u2 to 31w2 are individually inserted from the main surface 90x side of the wiring board 90. For example, they are electrically and mechanically connected by a solder material 26.

  In the third through-hole electrode row (second row from the top in FIG. 27), through-hole electrode portions 91u2, 93u1, 94u2, through-hole electrode portions 91v2, 93v1, 94v2, and through-hole electrode portions 91w2, 93w1, 94w2 In the first diode component 43u1 to 43w1, the cathode terminal (K) 46b, the first anode terminal (A) 46a1, and the second anode terminal (A) 46a2 are individually inserted from the main surface 90x side of the wiring board 90. For example, they are electrically and mechanically connected by the solder material 26.

  In the fourth through-hole electrode row (the second row below in FIG. 27), through-hole electrode portions 92u1, 93u3, 95u2, through-hole electrode portions 92v1, 93v3, 95v2, and through-hole electrode portions 92w1, 93w3, 95w2 The first anode terminal (A) 46a1, the cathode terminal (K) 46b, and the second anode terminal (A) 46a2 of the second diode components 43u2 to 43w2 are individually inserted from the main surface 90x side of the wiring board 90. For example, they are electrically and mechanically connected by the solder material 26.

  One electrode of the capacitor components C1, C2, C3 is electrically and mechanically connected to the electrode pad portions 91up, 91vp, 91wp by, for example, a solder material 26a (see FIG. 28). In addition, the other electrodes of the capacitor components C1, C2, and C3 are electrically and mechanically connected to the electrode pad portions 92up, 92vp, and 92wp by, for example, a solder material 26a.

  In each of the power conversion units 12u, 12v, 12w, one electrode of the capacitor parts C1, C2, C3 is electrically connected to the first main power supply wiring 99P via the first wiring 91u, 91v, 91w, and the other The electrodes are electrically connected to the second main power supply wiring 99N via the second wirings 92u, 92v, 92w. That is, the capacitor components C1, C2, C3 are connected between the first main power supply wiring 99P and the second main power supply wiring 99N.

  The second main terminal (C) 36b of the first semiconductor devices 31u1, 31v1, 31w1 is one of the first main power supply wiring 99P and the capacitor components C1, C2, C3 via the first wirings 91u, 91v, 91w. It is electrically connected to the electrode. That is, the second main terminal (C) 36b of the first semiconductor devices 31u1, 31v1, 31w1 is connected between the first main power supply wiring 99P and the capacitor components C1, C2, C3.

The first main terminals (E) 36a of the second semiconductor devices 31u2, 31v2, 31w2 are connected to the second main power supply wiring 99N and the capacitor via the fifth wirings 95u, 95v, 95w and the second wirings 92u, 92v, 92w. The other electrodes of the parts C1, C2, and C3 are electrically connected. That is, the first main terminal (E) 36a of the second semiconductor devices 31u2, 31v2, 31w2 is connected between the second main power supply line 99N and the capacitor components C1, C2, C3.
The first semiconductor devices 31u1, 31v1, 31w1 and the second semiconductor devices 31u2, 31v2, 31w2 are mounted on the wiring board 90 so as to face each other in the Y direction.
The capacitor components C1, C2, and C3 are mounted in a region between the first semiconductor devices 31u1, 31v1, and 31w1 and the second semiconductor devices 31u2, 31v2, and 31w2 on the wiring board 90.

  In each power conversion unit 12u, 12v, 12w, the first diode parts 43u1, 43v1, 43w1, and the second diode parts 43u2, 43v2, 43w2 are the first semiconductor devices 31u1, 31v1, 31w1, and the second semiconductor devices 31u2, 31v2, respectively. In the opposing direction (Y direction) of 31w2, the wiring substrate 90 faces each other inside the first semiconductor devices 31u1, 31v1, 31w1 and the second semiconductor devices 31u2, 31v2, 31w2 and outside the capacitor components C1, C2, C3. Has been implemented.

The cathode terminal 46b of the first diode component 43u1,43v1,43w1 the first wiring 91 u, 91 v, 91 second main terminal (C) 36b of the first semiconductor device 31u1,31v1,31w1 through w and The capacitor parts C1, C2, and C3 are electrically connected. That is, the cathode terminal 46b of the first diode component 43u1, 43v1, 43w1 is connected between the second main terminal 36b of the first semiconductor device 31u1, 31v1, 31w1 and the capacitor component C1, C2, C3.

  The first anode terminal 46a1 of the second diode component 43u2, 43v2, 43w2 is electrically connected to the second main power supply wiring 99N and the other electrodes of the capacitor components C1, C2, C3 via the second wirings 92u, 92v, 92w. Connected. That is, the first anode terminal 46a1 of the second diode component 43u2, 43v2, 43w2 is connected between the second main power supply line 99N and the capacitor component C1, C2, C3.

The capacitor components C1, C2, and C3 are mounted in a region between the first diode components 43u1, 43v1, and 43w1 and the second diode components 43u2, 43v2, and 43w2 on the wiring board 90.
In each power converter 12u, 12v, 12w, the cathode terminal 46b of the first diode component 43u1, 43v1, 43w1 and the first anode terminal 46a1 of the second diode component 43u2, 43v2, 43w2 are arranged to face each other. . The capacitor parts C1, C2, and C3 are disposed between the cathode terminal 46b of the first diode parts 43u1, 43v1, and 43w1 and the first anode terminal 46a1 of the second diode parts 43u2, 43v2, and 43w2.

  In each power conversion unit 12u, 12v, 12w, the cathode terminal 46b of the first diode component 43u1, 43v1, 43w1 is disposed to face the second main terminal (C) 36b of the first semiconductor device 31u1, 31v1, 31w1. ing. The first anode terminal 46a1 of the second diode component 43u2, 43v2, 43w2 is disposed to face the control terminal (G) 36c of the second semiconductor device 31u2, 31v2, 31w2.

In each power conversion unit 12u, 12v, 12w, the first anode terminal 46a1 of the first diode component 43u1, 43v1, 43w1 and the cathode terminal 46b of the second diode component 43u2, 43v2, 43w2 are arranged to face each other, and They are electrically connected through three wirings 93.
Further, a second anode terminal 46a 2 of the first diode component 43u1,43v1,43w1 first main terminal (E) 36a of the first semiconductor device 31u1,31v1,31w1 are opposed to each other, the fourth wiring 94u , 94v, 94w are electrically connected to each other.

  The first anode terminal 46a2 of the first diode component 43u1, 43v1, 43w1 is disposed to face the control terminal (G) 36c of the first semiconductor device 31u1, 31v1, 31w1, and the first diode component 43u1. , 43v1, 43w1 and third wirings 93u, 93v, 93w and fourth wirings 94u, 94v, 94w are respectively connected to the second anode terminal 46a2 of the first semiconductor device 31u1, 31v1, 31w1 and the first main terminal (E) 36a. Is electrically connected.

The second anode terminals 46a2 of the second diode components 43u 2 , 43v 2 , 43w 2 are arranged opposite to the first main terminals (E) 36a of the second semiconductor devices 31u2, 31v2, 31w2, and the fifth The second wirings 92u, 92v, and 92w are electrically connected to each other through the wirings 95u, 95v, and 95w, and are connected to the first anode terminal 46a1 and the second main power supply wiring 99N of the second diode components 43u2, 43v2, and 43w2. The fifth wirings 95u, 95v, and 95w are electrically connected.

  In the power conversion device 10E according to the fifth embodiment of the present invention, as described above, the second main terminal (C) 36b of the first semiconductor devices 31u1, 31v1, 31w1 is the first main power supply wiring 99P and the capacitor component C1. , C2, C3, and the first main terminal (E) 36a of the second semiconductor device 31u2, 31v2, 31w2 is connected between the second main power supply line 99N and the capacitor components C1, C2, C3. ing. The capacitor components C1, C2, and C3 are arranged in the region between the first semiconductor devices 31u1, 31v1, and 31w1 and the second semiconductor devices 31u2, 31v2, and 31w2 mounted on the wiring substrate 90 so as to face each other. Has been implemented.

  Further, in the power conversion device 10E according to the fifth embodiment of the present invention, the first diode components 43u1, 43v1, 43w1, the second diode components 43u2, 43v2, 43w2, and the first semiconductor devices 31u1, 31v1, 31w1, 2 In the opposing direction (Y direction) of the semiconductor devices 31u2, 31v2, and 31w2, they are inside the first semiconductor devices 31u1, 31v1, 31w1, and the second semiconductor devices 31u2, 31v2, 31w2, and outside the capacitor components C1, C2, C3. Are mounted on the wiring board 90 so as to face each other.

In the power conversion device 10E according to the fifth embodiment of the present invention, the cathode terminal 46b of the first diode component 43u1, 43v1, 43w1 is the second main terminal (C) of the first semiconductor device 31u1, 31v1, 31w1. 36b and the capacitor parts C1, C2, C3, and the first and second anode terminals 46a1, 46a2 of the second diode parts 43u2, 43v2, 43w2 are connected to the second semiconductor devices 31u2, 31v2, 31w2 . 1 is connected between the main terminal (E) 36a and the capacitor parts C1, C2, C3. The capacitor components C1, C2, and C3 are mounted in a region between the first diode components 43u1, 43v1, and 43w1 and the second diode components 43u2, 43v2, and 43w2 on the wiring board 90.
Therefore, also in the power conversion device 10E according to the fifth embodiment of the present invention, as in the power conversion device 10B according to the second embodiment of the present invention described above, it is possible to achieve low inductance and downsizing. .

  The power conversion device 10E according to the fifth embodiment of the present invention includes a first diode component inside the first semiconductor devices 31u1 to 31w1 in the same manner as the power conversion device 10B according to the second embodiment of the present invention described above. 43u1 to 43w1 are arranged, and the second diode components 43u2 to 43w2 are arranged inside the second semiconductor devices 31u2 to 31w2. The first semiconductor devices 31u1 to 31w1 and the first diode components 43u1 to 43w1 are fixed to the first portion 22a of the first heat conducting plate 22 in the same manner as in the second embodiment described above. The second semiconductor devices 31u2 to 31w2 and the second diode components 43u2 to 43w2 are also fixed to the first portion 22a of the second heat conducting plate 23 in the same manner as in the second embodiment.

Accordingly, in the power conversion device 10E according to the fifth embodiment of the present invention, the heat dissipation effect can be enhanced similarly to the power conversion device 10B according to the second embodiment of the present invention described above. It is possible to provide the power conversion device 10E having a high heat dissipation effect and the electric motor 1 including the same.
In the fifth embodiment of the present invention, the first portion 22a of the first heat conducting plate 22, the heat sink of the first electronic component (the heat sink 35 of the first semiconductor devices 31u1 to 31w1, the first diode component 43u1). To 43w1 between the first portion 23a of the second heat conducting plate 23 and the heat sink of the second electronic component (the heat sink 35 of the second semiconductor devices 31u2 to 31w2 and the second diode components 43u2 to 43w2). In the above description, the insulating sheet 24 is interposed between the first and second heat conducting plates 22 as shown in FIG. , 23b and the main surface 20x of the base member 20 may be interposed.

Note that the power conversion devices according to the first to fifth embodiments of the present invention have been described focusing on the IGBT as a switching element mounted on the semiconductor device. However, the present invention is not limited to this, and can also be applied to, for example, a power converter having a semiconductor device on which a MIS field effect transistor is mounted as a switching element.
Although the invention made by the present inventor has been specifically described based on the first to fifth embodiments described above, the present invention is not limited to the first to fifth embodiments described above. Of course, various changes can be made without departing from the scope of the invention.
As described above, the power conversion device according to the present invention and the electric motor including the power conversion device can achieve low inductance, and include a semiconductor device on which a switching element is mounted and an inverter circuit including a capacitor component. And an electric motor provided with the same.

1 ... electric motor, 2 ... housing 3 ... motors unit, 4 ... output shaft, 5 ... O-ring 10A, 10B, 10C, 10D, 10E ... power conversion device 11 ... inverter circuit, 12u, 12v, 12w ... Power converter (leg),
DESCRIPTION OF SYMBOLS 13 ... Gate drive circuit, 14 ... Control circuit, 15 transistor element, 16 diode element, 19P ... Positive electrode line, 19N ... Negative electrode line 20 ... Base member, 20a ... Groove, 20b ... Convex fin, 20x ... Main surface, 20y ... Back surface 21 ... fixed plate, 22 ... first heat conduction plate, 2 3 ... second heat conduction plate, 22a, 23a ... first portion, 22b, 23b ... second portion, 24 ... insulating sheet, 25 ... support, 26 ... Solder material, 27, 28, 29 ... Screw member 30u1, 30v1, 30w1 ... First semiconductor device 30u2, 30v2, 30w2 ... Second semiconductor device 31u1, 31v2, 31w1 ... First semiconductor device 31u2, 31v2, 31w2 ... Second semiconductor Device 33, 34 ... Semiconductor chip, 33a, 33b, 34a ... Main surface electrode, 33c, 34c ... Back electrode 35 ... Heat sink, 35a ... Device mounting Surface, 35b ... heat dissipation surface, 35c ... through hole for screw,
36a ... 1st main terminal, 36b ... 2nd main terminal, 36c ... Control terminal, 37 ... Bonding wire, 38 ... Sealing body, 38c ... Through-hole for screws 41u1, 41v1, 41w1 ... 1st diode component 41u2, 41v2, 41w2: second diode component 42u1, 42v1, 42w1 ... first diode component 42u2, 42v2, 42w2 ... second diode component 43u1, 43v1, 43w1 ... first diode component 43u2, 43v2, 43w2 ... second diode component 44 ... semiconductor chip 44a ... main surface electrode, 44c ... back electrode 45 ... heat sink, 45a ... element mounting surface, 45b ... heat dissipation surface, 45c ... screw through hole,
46a ... anode terminal, 46b cathode terminal, 47 ... bonding wire, 48 ... sealing body, 48c ... screw through hole 50 ... wiring board 59P ... first main power supply wiring, 59N ... second main power supply wiring 51u, 51v, 51w ... 1st wiring 51u1, 51v1, 51w1 ... Through-hole electrode part 51up, 51vp, 51wp ... Electrode pad part 52u, 52v, 52w ... 2nd wiring 52u1, 52v1, 52w1 ... Through-hole electrode part 52up, 52vp, 52wp ... Electrode pad Portions 53u, 53v, 53w ... Third wiring 53u1, 53u2, 53v1, 53v2, 53w1, 53w2 ... Through-hole electrode portions 54u, 54u, 54u ... Fourth wiring 54u1, 54v1, 54w1 ... Through-hole electrode portions 55u, 55v, 55w ... Fifth wiring 54u1, 54v1, 54w1 The electrode pad portions 60, 70, 80, 90 ... wiring board C1, C2, C3 ... capacitor component

Claims (24)

A wiring board having a first main power supply wiring to which a first reference voltage is applied, and a second main power supply wiring to which a second reference voltage having a lower potential than the first reference voltage is applied;
First and second semiconductor devices and capacitor parts constituting an inverter circuit;
With
Each of the first and second semiconductor devices turns on an electrical connection between the first and second main terminals by a control terminal, first and second main terminals, and a control signal input to the control terminal. A switching element that turns off,
The capacitor component is connected to one electrode of the first main power supply line, is the other electrode connected to said second main power supply wiring,
A second main terminal of the first semiconductor device is connected between the first main power supply wiring and the capacitor component;
A first main terminal of the second semiconductor device is connected between the second main power supply wiring and the capacitor component;
The first and second semiconductor devices are mounted in a region between the first main power supply wiring and the second main power supply wiring on the wiring board so as to face each other.
The power converter according to claim 1, wherein the capacitor component is mounted in a region between the first and second semiconductor devices of the wiring board. The power conversion device according to claim 1,
Each of the first and second semiconductor devices has a diode element connected in parallel to the switching element. The power conversion device according to claim 2,
The second main terminal of the first semiconductor device and the first main terminal of the second semiconductor device are disposed to face each other,
The power converter according to claim 1, wherein the capacitor component is disposed between a second main terminal of the first semiconductor device and a first main terminal of the second semiconductor device. The power conversion device according to claim 3,
The power converter according to claim 1, wherein the first main terminal of the first semiconductor device and the second main terminal of the second semiconductor device are connected to face each other. The power conversion device according to claim 1,
A first and second diode component having a cathode terminal and first and second anode terminals connected in parallel;
The first and second diode components are opposed to each other inside the first and second semiconductor devices and outside the capacitor component in a facing direction in which the first and second semiconductor devices face each other. Implemented in
The cathode terminal of the first diode component is connected between the second main terminal of the first semiconductor device and the capacitor component;
The first and second anode terminals of the second diode component are connected between the first main terminal of the second semiconductor device and the capacitor component. The capacitor component is the first and second of the wiring board. It is mounted in the area | region between diode components, The power converter device characterized by the above-mentioned. The power conversion device according to claim 5,
The cathode terminal of the first diode component and the first anode terminal of the second diode component are disposed to face each other,
The power converter according to claim 1, wherein the capacitor component is disposed between a cathode terminal of the first diode component and a first anode terminal of the second diode component. The power conversion device according to claim 6, wherein
The cathode terminal of the first diode component is disposed to face the second main terminal of the first semiconductor device,
The power converter according to claim 2, wherein the second anode terminal of the second diode component is disposed to face the first main terminal of the second semiconductor device. The power conversion device according to claim 7,
The first anode terminal of the first diode component and the cathode terminal of the second diode component are connected to face each other,
A second anode terminal of the first diode component and a first main terminal of the first semiconductor device are connected to face each other;
The power conversion device, wherein the cathode terminal of the second diode component and the second main terminal of the second semiconductor device are connected to face each other. The power conversion device according to claim 1,
Further comprising first and second diode components having an anode terminal and a cathode terminal;
The first and second diode components are mounted on the wiring board opposite to each other outside the first and second semiconductor devices in the arrangement direction of the first and second semiconductor devices,
The cathode terminal of the first diode component is connected between the first main power supply wiring and the second main terminal of the first semiconductor device,
An anode terminal of the second diode component is connected between the second main power supply wiring and the first main terminal of the second semiconductor device. The power conversion device according to claim 9, wherein
The cathode terminal of the first diode component is disposed to face the second main terminal of the first semiconductor device,
An anode terminal of the second diode component is disposed to face the first main terminal of the second semiconductor device. The power conversion device according to claim 10,
The first main terminal of the first semiconductor device and the second main terminal of the second semiconductor device are disposed opposite to each other and connected to each other,
The anode terminal of the first diode component and the first main terminal of the first semiconductor device are connected to face each other,
The power conversion device, wherein the cathode terminal of the second diode component and the second main terminal of the second semiconductor device are connected to face each other. The power conversion device according to claim 1,
Further comprising first and second diode components having a cathode terminal and an anode terminal;
The first and second diode components are opposed to each other inside the first and second semiconductor devices and outside the capacitor component in a facing direction in which the first and second semiconductor devices face each other. Implemented in
The cathode terminal of the first diode component is connected between the second main terminal of the first semiconductor device and the capacitor component;
An anode terminal of the second diode component is connected between the first main terminal of the second semiconductor device and the capacitor component;
The power converter according to claim 1, wherein the capacitor component is mounted in a region between the first and second diode components of the wiring board. The power conversion device according to claim 12, wherein
The cathode terminal of the first diode component and the anode terminal of the second diode component are disposed to face each other,
The power converter according to claim 1, wherein the capacitor component is disposed between a cathode terminal of the first diode component and an anode terminal of the second diode component. The power conversion device according to claim 13,
The cathode terminal of the first diode component is disposed to face the control terminal of the first semiconductor device,
An anode terminal of the second diode component is disposed to face the first main terminal of the second semiconductor device. The power conversion device according to claim 14, wherein
The anode terminal of the first diode component and the cathode terminal of the second diode component are connected to face each other,
The anode terminal of the first diode component and the first main terminal of the first semiconductor device are connected to face each other,
The cathode converter terminal of the second diode component is opposed to the control terminal of the second semiconductor device and is connected to the second main terminal of the second semiconductor device. The power conversion device according to claim 1,
First and second diode elements; a cathode terminal connected to the cathode of each of the first and second diode elements; a first anode terminal connected to the anode of the first diode element; and the second diode A first and second diode component having a second anode terminal connected to the anode of the device;
The first and second diode components are opposed to each other inside the first and second semiconductor devices and outside the capacitor component in a facing direction in which the first and second semiconductor devices face each other. Implemented in
The cathode terminal of the first diode component is connected between the second main terminal of the first semiconductor device and the capacitor component;
A first anode terminal of the second diode component is connected between the second main power supply line and the capacitor component;
The power converter according to claim 1, wherein the capacitor component is mounted in a region between the first and second diode components of the wiring board. The power conversion device according to claim 16, wherein
The cathode terminal of the first diode component and the first anode terminal of the second diode component are disposed to face each other,
The power converter according to claim 1, wherein the capacitor component is disposed between a cathode terminal of the first diode component and a first anode terminal of the second diode component. The power conversion device according to claim 17,
The cathode terminal of the first diode component is disposed to face the second main terminal of the first semiconductor device,
The power converter according to claim 1, wherein the first anode terminal of the second diode component is disposed to face the control terminal of the second semiconductor device. The power conversion device according to claim 18, wherein
The first anode terminal of the first diode component and the cathode terminal of the second diode component are connected to face each other,
A second anode terminal of the first diode component and a first main terminal of the first semiconductor device are connected to face each other;
The first anode terminal of the first diode component is disposed opposite to the control terminal of the first semiconductor device, and the second anode terminal of the first diode component and the first main terminal of the first semiconductor device. Connected to each of the
The cathode terminal of the second diode component is connected to face the second main terminal of the second semiconductor device,
The second anode terminal of the second diode component is connected to the first main terminal of the second semiconductor device so as to face each other, and is connected to the first anode terminal of the second diode component and the second main power supply wiring. A power converter characterized by being connected. The power conversion device according to claim 2,
A base member; and first and second heat conduction plates fixed to the base member;
Each of the first and second semiconductor devices includes a heat sink electrically connected to the second main terminal and having the switching element and the diode element mounted on an element mounting surface, and an element mounting of the heat sink A sealing body that seals the switching element, the diode element, and the heat dissipation plate so that a heat dissipation surface different from the surface is exposed;
The first semiconductor device is fixed to the first heat conduction plate such that a heat radiation surface of the heat radiation plate is connected to the first heat conduction plate,
The second semiconductor device is fixed to the second heat conducting plate such that a heat radiating surface of the heat radiating plate is connected to the second heat conducting plate,
The power converter according to claim 1, wherein the heat dissipation plate of each of the first and second semiconductor devices is electrically insulated and separated from the first and second heat conductive plates. The power conversion device according to claim 2,
A base member; and first and second heat conduction plates fixed to the base member;
Each of the first and second semiconductor devices includes a heat radiating plate electrically connected to the second main terminal and having the switching element and the diode element mounted on an element mounting surface, and the element of the heat radiating plate. A sealing body that seals the switching element, the diode element, and the heat dissipation plate so that a heat dissipation surface different from the mounting surface is exposed;
The first semiconductor device is fixed to the first heat conduction plate such that a heat radiation surface of the heat radiation plate is connected to the first heat conduction plate,
The second semiconductor device is fixed to the second heat conducting plate such that a heat radiating surface of the heat radiating plate is connected to the second heat conducting plate,
Each of the first and second heat conducting plates is electrically insulated and separated from the base member. In the power converter device of any one of Claim 5, Claim 9, Claim 12, and Claim 16,
A base member; and first and second heat conduction plates fixed to the base member;
Each of the first and second semiconductor devices is different from an element mounting surface of the heat dissipation plate, and a heat dissipation plate electrically connected to the second main terminal and having the switching element mounted on an element mounting surface. A sealing body that seals the switching element and the heat dissipation plate so that a heat dissipation surface is exposed;
Each of the first and second diode parts includes a diode element electrically connected to the anode terminal and the cathode terminal, and is electrically connected to the cathode terminal, and the diode element is mounted on an element mounting surface. And a sealing body that seals the diode element and the heat dissipation plate so that a heat dissipation surface different from the element mounting surface of the heat dissipation plate is exposed,
The first semiconductor device and the first diode component are fixed to the first heat conducting plate such that a heat radiating surface of each of the heat radiating plates is connected to the first heat conducting plate,
The second semiconductor device and the second diode component are fixed to the second heat conduction plate such that a heat radiation surface of each of the heat radiation plates is connected to the second heat conduction plate,
The heat sink of each of the first semiconductor device and the first diode component is electrically insulated and separated from the first heat conductive plate,
The power conversion device according to claim 1, wherein the heat sink of each of the second semiconductor device and the second diode component is electrically insulated and separated from the second heat conductive plate. In the power converter device of any one of Claim 5, Claim 9, Claim 12, and Claim 16,
A base member; and first and second heat conduction plates fixed to the base member;
Each of the first and second semiconductor devices is different from an element mounting surface of the heat dissipation plate, and a heat dissipation plate electrically connected to the second main terminal and having the switching element mounted on an element mounting surface. A sealing body that seals the switching element and the heat dissipation plate so that a heat dissipation surface is exposed;
Each of the first and second diode parts includes a diode element electrically connected to the anode terminal and the cathode terminal, and is electrically connected to the cathode terminal, and the diode element is mounted on an element mounting surface. And a sealing body that seals the diode element and the heat dissipation plate so that a heat dissipation surface different from the element mounting surface of the heat dissipation plate is exposed,
The first semiconductor device and the first diode component are fixed to the first heat conducting plate such that a heat radiating surface of each of the heat radiating plates is connected to the first heat conducting plate,
The second semiconductor device and the second diode component are fixed to the second heat conduction plate such that a heat radiation surface of each of the heat radiation plates is connected to the second heat conduction plate,
Each of the first and second heat conducting plates is electrically insulated and separated from the base member.   An electric motor comprising the power converter according to any one of claims 1 to 23.

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