JP6426248B2 - Semiconductor light emitting device - Google Patents

Description

  The present invention relates to a semiconductor light emitting device provided with a semiconductor element.

  6 and 7 show an example of a conventional semiconductor light emitting device (see, for example, Patent Document 1). The semiconductor light emitting device X shown in these figures includes a lead frame 91, an LED chip 92, a case 93, and a translucent resin 94. The lead frame 91 is composed of two band-like portions having a substantially constant width. The back surface of the lead frame 91 is exposed from the case 93. The LED chip 92 is a light source of the semiconductor light emitting device X, and is bonded to a bonding portion 91 a included in one of the strip portions of the lead frame 91. The LED chip 92 is connected to the other strip portion of the lead frame 91 by a wire 95.

  In order to increase the brightness of the semiconductor light emitting device X, it is necessary to increase the input power to the LED chip 92. Along with this, the amount of heat generated from the LED chip 92 increases. The heat is preferably dissipated to, for example, a circuit board on which the semiconductor light emitting device X is mounted via the bonding portion 91a. However, in the semiconductor light emitting device X having a relatively small size and a long rectangular shape as a whole, when the size of the bonding portion 91 a with respect to the case 93 is increased, there is a problem that the lead frame 91 falls off the case 93.

JP, 2005-353914, A

  The present invention is conceived under the above-described circumstances, and an object thereof is to provide a semiconductor light-emitting device which can be properly downsized.

  A semiconductor light emitting device provided by the present invention is bonded to a first lead frame, a second lead frame spaced apart from the first lead frame in a first direction, and a die bonding portion of the first lead frame. A semiconductor light emitting element electrically connected to the second lead frame, and a frame portion for annularly surrounding the semiconductor light emitting element so as to be exposed through the opening and reflecting light of the semiconductor light emitting element in the emission direction. And a resin case for supporting the first lead frame and the second lead frame, wherein the first lead frame is integrally provided with the die bonding portion, and a back surface thereof is a back surface of the die bonding portion A second light emitting element disposed on the side closer to the light emitting direction, and orthogonal to the first direction from the die bonding portion in plan view; The case includes a first extending portion having a width in the first direction smaller than a width in the first direction of the die bonding portion and extending in a direction to a region overlapping with the frame-like portion. The frame-shaped portion closely covers the surface of the first extension portion and has a first holding portion closely covering the back surface of the first extension portion while exposing the back surface of the die bonding portion The first extending portion has a width in the first direction smaller than a width in the first direction of the semiconductor light emitting element.

  In a preferred embodiment of the present invention, the first extending portion is provided to extend in a second direction at least in a central region of the die bonding portion in the first direction. In a preferred embodiment of the present invention, the first extending portion is provided to extend in the second direction at least in an end region on the second lead frame side in the first direction of the die bonding portion. ing. In a preferred embodiment of the present invention, the first extending portion extends in the second direction at least in an end region of the die bonding portion opposite to the second lead frame in the first direction. It is provided. In a preferred embodiment of the present invention, a plurality of the first extending portions are provided. In a preferred embodiment of the present invention, the surface of the first extension portion is formed flush with the die bonding portion. In a preferred embodiment of the present invention, the back surface of the die bonding portion is flush with the back surface of the case. In a preferred embodiment of the present invention, the first lead frame has a first terminal portion, and the thickness of the portion other than the first terminal portion is less than the thickness of the first terminal portion. Have. In a preferred embodiment of the present invention, the second lead frame is provided integrally with a main body portion whose surface is exposed from the opening of the case and whose back surface is exposed from the case, And a second extending portion having a back surface located on the emission direction side of the back surface of the main body portion and extending from the main body portion to the region overlapping the frame-like portion in the second direction in plan view And the case closely covers the surface of the second extending portion with the frame-like portion and closely contacts the back surface of the second extending portion while exposing the back surface of the main body portion. And a second holding portion for covering the In a preferred embodiment of the present invention, the second lead frame is provided integrally with the main body portion, and the back surface thereof is positioned on the side of the light emission direction from the back surface of the main body portion. A third extending portion extending from the main body in the first direction is provided, and the case has a third holding portion closely covering the back surface of the third extending portion.

  In a preferred embodiment of the present invention, the second extension and the third extension are continuous so as to surround the main body. In a preferred embodiment of the present invention, the surfaces of the second extension and the third extension are flush with the surface of the main body. In a preferred embodiment of the present invention, the back surface of the main body is flush with the back surface of the case. In a preferred embodiment of the present invention, the second lead frame has a second terminal portion, and the thickness of the portion other than the second terminal portion is less than the thickness of the second terminal portion. Have. In a preferred embodiment of the present invention, the first lead frame and the second lead frame are non-bent lead frames. In a preferred embodiment of the present invention, the distal end portion of each of the extension portions is contained in the case by being positioned inside the side surface of the case. In a preferred embodiment of the present invention, the back surface of each of the extension portions has a flat surface parallel to the surface of each of the extension portions. In a preferred embodiment of the present invention, the opening of the frame portion is rectangular. In a preferred embodiment of the present invention, the case is made of white resin. In a preferred embodiment of the present invention, at least one first extending portion is formed on each side of the die bonding portion in the second direction. In a preferred embodiment of the present invention, the first extending portion may include a plurality of the first extending portions formed on one side in the second direction of the die bonding portion. In a preferred embodiment of the present invention, the plurality of first extending portions have the same length extending in the second direction.

  Other features and advantages of the present invention will become more apparent from the detailed description given below with reference to the accompanying drawings.

It is a principal part top view showing an example of the semiconductor light-emitting device concerning the present invention. It is a bottom view showing an example of the semiconductor light-emitting device concerning the present invention. It is sectional drawing in alignment with the III-III line of FIG. It is sectional drawing in alignment with the IV-IV line of FIG. It is sectional drawing in alignment with the VV line of FIG. It is sectional drawing which shows an example of the conventional semiconductor light-emitting device. It is sectional drawing in alignment with the VII-VII line of FIG.

  Hereinafter, preferred embodiments of the present invention will be specifically described with reference to the drawings.

  1 to 5 show an example of a semiconductor light emitting device according to the present invention. The semiconductor light emitting device A of the present embodiment includes the lead frame 1, the LED chip 2, the case 3, and the light transmitting resin 4. The semiconductor light emitting device A is a very small long rectangular shape having a length of about 4 mm, a width of about 1 mm, and a height of about 0.6 mm. In FIG. 1, the translucent resin 4 is omitted for the sake of understanding.

  The lead frame 1 is made of, for example, Cu, Ni, or an alloy thereof, and is divided into two parts. As shown in FIG. 2, the back surface of the lead frame 1 is exposed from the case 3. Among these, the relatively long portion (first lead frame) has a bonding portion 11, a plurality of thin extension portions 12, and a plurality of thick extension portions 13.

  The bonding portion 11 has a band shape, and is a portion to which the LED chip 2 is bonded on the surface. The thin extension 12 extends from the bonding portion 11, and in the present embodiment, the thickness thereof is about half that of the bonding portion 11. As shown in FIG. 4, the surface of the thin extension 12 is flush with the surface of the bonding portion 11. The back surface of the thin extension 11 is positioned more inward of the case 3 than the back surface of the bonding portion 11 and is covered by the case 3. As shown in FIG. 5, the thick extension 13 extends from the bonding portion 11 and has the same thickness as the bonding portion 11. The surface of the thick extension 13 is flush with the surface of the bonding portion 11, and the back of the thick extension 13 is exposed from the case 3. In the present embodiment, a plurality of thin extension portions 12 and a plurality of thick extension portions 13 are alternately arranged in the longitudinal direction of the frame 1.

  The LED chip 2 is a light source of the semiconductor light emitting device A, and is a semiconductor light emitting element that emits light of a predetermined wavelength. The LED chip 2 is made of, for example, a semiconductor material such as GaN, and recombines electrons and holes in an active layer sandwiched between an n-type semiconductor layer and a p-type semiconductor layer to emit blue light, green light and red light. And so forth. The LED chip 2 is connected to a relatively short portion (second lead frame) of the lead frame 1 by a wire 5.

  Case 3 is made of, for example, a white resin, and the whole is in the shape of a long rectangular frame. As shown in FIGS. 3 to 5, the inner surface of the case 3 is a tapered reflector 3 a. The reflector 3 a is for reflecting the light emitted laterally from the LED chip 2 upward. As shown in FIG. 4, the case 3 is adapted to hold the thin extension 12. Further, as shown in FIG. 2, the case 3, the plurality of thin extension portions 12 and the plurality of thick extension portions 13 are in a mutually intermingled relationship.

  The translucent resin 4 is made of, for example, a transparent epoxy resin, and is filled in the space surrounded by the case 3. The translucent resin 4 covers the LED chip 2 and transmits light from the LED chip 2 while protecting the LED chip 2.

  Next, the operation of the semiconductor light emitting device A will be described.

  According to the present embodiment, the case 3 holds the thin extension 12. This makes it possible to increase the holding power of the lead frame 1 by the case 3. This can prevent the lead frame 1 from coming out of the case 3. As a result, as shown in FIG. 2, the semiconductor light emitting device A can increase the area of the portion of the lead frame 1 exposed from the case 3 despite the extremely narrow width of about 1 mm. . Therefore, the heat from the LED chip 2 can be appropriately dissipated, and the miniaturization and high luminance of the semiconductor light emitting device A can be achieved.

  By alternately arranging the thin extension 12 and the thick extension 13, the lead of the thick extension 13 exposed from the case 3 is held while the thin extension 12 is held in the case 3. It is possible to enlarge the exposed area of the frame 1. This is suitable for reducing the size and increasing the brightness of the semiconductor light emitting device A.

  The semiconductor light emitting device according to the present invention is not limited to the embodiment described above. The specific configuration of each part of the semiconductor light emitting device according to the present invention can be varied in design in many ways.

A Semiconductor light emitting device 1 Lead frame 2 LED chip (semiconductor light emitting element)
3 Case 4 Light transmitting resin 5 Wire 11 Bonding portion 12 Thin-walled extension portion 13 Thick-walled extension portion

Claims (21)

A first lead frame,
A second lead frame spaced apart from the first lead frame in a first direction;
A semiconductor light emitting element bonded to a die bonding portion of the first lead frame and electrically connected to the second lead frame;
The semiconductor light emitting device is annularly enclosed so as to be exposed through the opening, and has a frame portion for reflecting light of the semiconductor light emitting device in the emission direction, and supports the first lead frame and the second lead frame. With a plastic case,
Equipped with
The second lead frame is integrally provided with a main body portion whose surface is exposed from the opening of the case and whose back surface is exposed from the case, and whose back surface is emitted from the back surface of the main body portion A second thin extension extending from the main body to a second direction perpendicular to the first direction in plan view and provided integrally with the main body, and the first direction And a second protrusion projecting from the case toward the opposite side to the first lead frame and having the same thickness as the main body,
The case includes a second holding portion closely covering the back surface of the second thin extension while exposing the back surface of the main body portion,
The semiconductor light emitting device, wherein the second protrusion has a second recess that is recessed in the first direction in a plan view.   The semiconductor light emitting device according to claim 1, wherein the second recess is located at the center of the second protrusion in the second direction. The second thin extension portion extends to a region overlapping with the frame portion in plan view,
The semiconductor light-emitting device according to claim 1, wherein the case closely covers the surface of the second thin extension. The second lead frame is provided integrally with the main body portion, and the back surface thereof is positioned on the emission direction side of the back surface of the main body portion, and the first lead frame in the first direction from the main body portion in plan view Has a third thin extension that extends toward the lead frame,
The semiconductor light emitting device according to claim 3, wherein the case includes a third holding portion closely covering the back surface of the third thin extension.   The semiconductor light emitting device according to claim 4, wherein the second thin extension and the third thin extension are continuous to surround the main body.   The semiconductor light emitting device according to claim 5, wherein the surfaces of the second thin extension and the third thin extension are flush with the surface of the main body. The semiconductor light emitting device according to any one of claims 1 to 6, wherein the back surface of the main body portion is flush with the back surface of the case . The first lead frame is integrally provided with the die bonding portion, protrudes from the case toward the opposite side to the second lead frame in the first direction, and has the same thickness as the die bonding portion. Has a first projection,
The semiconductor light emitting device according to any one of claims 1 to 7 , wherein the first protrusion has a first recess which is recessed in the first direction in a plan view. The first lead frame is provided integrally with the die bonding portion, and the back surface thereof is located on the emission direction side of the back surface of the die bonding portion and in the second direction from the die bonding portion in plan view It has the 1st thin extension which extends.
9. The semiconductor light emitting device according to claim 8 , wherein the case includes a first holding portion closely covering the back surface of the first thin extension while exposing the back surface of the die bonding portion. The first thin extension portion extends to a region overlapping with the frame portion in plan view,
The semiconductor light emitting device according to claim 9 , wherein the case closely covers the surface of the first thin extension. The first thin extending portion is provided in plurality, the semiconductor light-emitting device according to claim 9 or 10. The semiconductor light-emitting device according to any one of claims 9 to 11 , wherein the surface of the first thin extension is flush with the die bonding portion. The semiconductor light emitting device according to any one of claims 9 to 12 , wherein the back surface of the die bonding portion is flush with the back surface of the case. The first lead frame is provided integrally with the die bonding portion, the back surface thereof is flush with the back surface of the die bonding portion, and the front surface thereof is flush with the surface of the die bonding portion, and the plan view The semiconductor light emitting device according to any one of claims 9 to 13 , further comprising a thick extension extending from the die bonding portion in the second direction. The semiconductor light-emitting device according to any one of claims 9 to 14 , wherein a thickness of the first thin extension is approximately half the thickness of the die bonding portion. The semiconductor light emitting device according to any one of claims 9 to 15 , wherein the first lead frame and the second lead frame have a thickness of 0.6 mm or less. The semiconductor light emitting device according to any one of claims 9 to 16 , wherein a back surface of a portion of the first lead frame overlapping the semiconductor light emitting element in a plan view is exposed from the case. The semiconductor light emitting device according to any one of claims 1 to 17 , wherein a tip end portion of each of the extension portions is included in the case by being positioned inside a side surface of the case. The semiconductor light emitting device according to any one of claims 1 to 18 , wherein the back surface of each of the extension portions has a flat surface parallel to the front surface of each of the extension portions. The semiconductor light-emitting device according to any one of claims 1 to 19 , wherein the opening of the frame portion is rectangular. The case is made of white resin, the semiconductor light-emitting device according to any one of claims 1 to 20.

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