JP6428069B2 - Manufacturing method of semiconductor device and temporarily fixed substrate - Google Patents

Description

  The present invention relates to a method for manufacturing a semiconductor device, and a temporarily fixed substrate used in the manufacturing method.

  2. Description of the Related Art In recent years, electronic devices such as portable information communication device terminals have been rapidly reduced in size and functionality, and a thin and highly functional semiconductor device is required. If the wiring board used in the semiconductor device is thinned, it is directly connected to the thinning of the semiconductor device, and the conductor path length in the wiring board can be shortened, which is advantageous for high functionality. Therefore, it is required to make the wiring board as thin as possible.

  For example, a multilayer wiring board formed by a build-up method, which has been widely used as a board corresponding to higher density and thinner wiring boards, conventionally has an insulating layer and a wiring pattern layer repeatedly stacked on a core substrate. Although it has been manufactured by a method, a multilayer wiring board from which a core substrate is removed has been studied in response to the demand for thinning as described above.

  However, when the wiring board is made thinner, the rigidity is reduced accordingly, and thus a problem arises in that warpage generated in the manufacturing process of the wiring board is increased. As a result, positional accuracy such as wiring processing and various drilling operations during the manufacture of the wiring board may be deteriorated, and it becomes difficult to manufacture the wiring board with a high yield. Further, when the wiring board is warped, it is difficult to flip-chip the semiconductor chip, which adversely affects the productivity of the semiconductor device. Furthermore, the mechanical strength of the wiring board is reduced due to the reduction in thickness, which causes problems such as breakage during transportation of the wiring board.

In order to solve this problem, a method of removing a support substrate after producing a thin wiring board on a thick support substrate is known.
For example, Patent Document 1 discloses a multilayer circuit board member characterized in that the multilayer circuit board is fixed to glass through a fixing material that can be peeled off. According to the technique of Patent Document 1, since the pattern can be formed on the insulating resin substrate in a state where the insulating resin substrate is temporarily fixed to the glass as the reinforcing plate, a high-definition pattern can be formed.
Patent Document 2 discloses a method of manufacturing a wiring board in which a solder resist layer, an insulating layer, a wiring pattern, and the like are formed on a supporting board made of a conductive material such as Cu, and then the supporting board is removed. According to the technique of Patent Document 2, it is possible to reduce the thickness and manufacture a semiconductor device that can handle high-density wiring.
Furthermore, in the methods of Patent Documents 1 and 2, since the semiconductor chip can be reflow mounted on the wiring board without removing the support substrate, the wiring board is hardly warped and the semiconductor chip can be easily mounted.

JP 2004-140254 A JP 2007-13092 A

However, since the technology of Patent Document 1 uses glass as a support substrate, the glass substrate may be damaged during processing and transport of the wiring board in a state of being fixed to the support substrate. An improvement in the yield of semiconductor devices has been desired.
Further, in the technique of Patent Document 2, a metal plate is used as the support substrate, and the thermal expansion coefficient of the support substrate and the thermal expansion coefficient of the semiconductor chip are greatly deviated from each other. There is a concern that failures such as cracks are likely to occur. Furthermore, since it is necessary to etch the metal plate with an acid or the like when removing the support substrate, it is very time-consuming and improvement has been desired from the viewpoint of workability.

  The present invention can manufacture a thin wiring board with a high yield, can easily mount a semiconductor chip, is less likely to cause a failure in a connection portion between the semiconductor chip and the wiring board, and further removes the temporarily fixed substrate. It is an object of the present invention to provide a method for manufacturing a semiconductor device, and a temporary fixing base material used in the manufacturing method.

As a result of investigations to solve the above problems, the present inventors have found that the problems can be solved by the following present invention. That is, the present invention provides the following [1] to [6].
[1] A method of manufacturing a semiconductor device using a temporarily fixed substrate in which a temporarily fixed material layer is disposed on one surface of a support substrate,
The support substrate is a substrate obtained by curing a composite material containing glass cloth and a thermosetting resin composition, and the thermal expansion coefficient in the plane direction of the support substrate is 1 × 10 ⁻⁶ to 8 × 10. ^-6 / ℃,
The method for manufacturing a semiconductor device, wherein the temporary fixing material layer is a layer whose adhesion to an adherend is reduced by irradiation with ultraviolet rays, and includes the following steps 1 to 3.
Step 1: Step of temporarily fixing a wiring board to the temporary fixing substrate Step 2: Step of mounting a semiconductor chip on the wiring board temporarily fixed in Step 1 Step 3: Temporarily fixing the wiring substrate to the temporary fixing substrate Step of separating the temporarily fixed substrate and the wiring board by irradiating ultraviolet rays from the surface opposite to the surface [2] The support substrate transmits at least 30% of ultraviolet rays having an intensity of 250 mJ / s and a wavelength of 350 nm The method for manufacturing a semiconductor device according to [1] above.
[3] The method for manufacturing a semiconductor device according to [1] or [2], wherein the support substrate has a thickness of 60 to 400 μm.
[4] The thermosetting resin composition comprises (A) an epoxy resin, (a) a maleimide compound having at least two N-substituted maleimide groups in one molecule, and (b) an aromatic azomethine in the molecular structure. [1] to [1], comprising an amino-modified siloxane compound having a group, and (c) an imide resin having an acidic substituent and an aromatic azomethine group obtained by reacting an amine compound having an acidic substituent. 3] The method for manufacturing a semiconductor device according to any one of [3].
[5] The method for manufacturing a semiconductor device according to [4], wherein the thermosetting resin composition further contains an inorganic filler.
[6] A temporary fixing substrate in which a temporary fixing material layer is disposed on one surface of the supporting substrate, wherein the supporting substrate is obtained by curing a composite material containing glass cloth and a thermosetting resin composition. And the thermal expansion coefficient in the plane direction of the support substrate is 1 × 10 ⁻⁶ to 8 × 10 ⁻⁶ / ° C., and the temporary fixing material layer has a reduced adhesive force to the adherend due to irradiation with ultraviolet rays. A temporarily fixed substrate used in the method for manufacturing a semiconductor device according to any one of [1] to [5], wherein the substrate is a layer to be used.

  According to the present invention, a thin wiring board can be manufactured with a high yield, a semiconductor chip can be easily mounted, and the connection portion between the semiconductor chip and the wiring board is not easily damaged. It is possible to provide a method for manufacturing a semiconductor device that can be easily removed, and a temporary fixing substrate used in the method.

It is an end view which shows typically an example of the manufacturing method of this invention. It is a figure which shows the manufacturing method of the semiconductor device of this invention which shows the continuation of FIG. FIG. 3 is a diagram showing a method for manufacturing the semiconductor device of the present invention showing a continuation of FIG. 2. It is a figure which shows the manufacturing method of the semiconductor device of this invention which shows the continuation of FIG. It is a figure which shows the manufacturing method of the semiconductor device of this invention which shows the continuation of FIG. FIG. 6 is a diagram showing a method for manufacturing the semiconductor device of the present invention showing a continuation of FIG. 5.

[Method for Manufacturing Semiconductor Device]
The present invention is a method for manufacturing a semiconductor device using a temporarily fixed substrate having a temporarily fixed material layer disposed on one surface of a support substrate, the support substrate containing a glass cloth and a thermosetting resin composition. It is a substrate formed by curing a composite material, and the thermal expansion coefficient in the plane direction of the support substrate is 1 × 10 ⁻⁶ to 8 × 10 ⁻⁶ / ° C., and the temporary fixing material layer is coated with ultraviolet rays. It is a layer in which the adhesive strength with the body is lowered, and has the following steps 1 to 3.
Step 1: Step of temporarily fixing a wiring board to the temporary fixing substrate Step 2: Step of mounting a semiconductor chip on the wiring board temporarily fixed in Step 1 Step 3: Temporarily fixing the wiring substrate to the temporary fixing substrate A process of separating the temporarily fixed substrate and the wiring board by irradiating ultraviolet rays from the surface opposite to the surface

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the following description, the same or corresponding parts are denoted by the same reference numerals, and redundant description is omitted. Further, the positional relationship such as up, down, left and right is based on the positional relationship shown in the drawings unless otherwise specified. Further, the dimensional ratios in the drawings are not limited to the illustrated ratios.

<Temporary fixed substrate 3>
As shown in FIG. 1, the temporary fixing substrate 3 used in the present invention has a temporary fixing material layer 2 disposed on one surface of a support substrate 1.

(Supporting substrate 1)
The support substrate 1 is a substrate formed by curing a composite material containing glass cloth and a thermosetting resin composition.
Since the support substrate 1 is excellent in heat resistance, the semiconductor chip can be reflow-mounted on the wiring board without removing the temporarily fixed substrate. Moreover, since it is excellent in mechanical strength, it is possible to suppress breakage of the temporarily fixed substrate during manufacture and transportation of the wiring board, and to improve the yield of the wiring board and the semiconductor device.
In addition, since the temporarily fixed substrate is composed of a member having transparency, a layer in which the adhesive strength with the adherend is reduced by irradiation with ultraviolet rays to be described later can be used. Excellent workability.

The thermal expansion coefficient in the plane direction of the support substrate 1 is 1 × 10 ⁻⁶ to 8 × 10 ⁻⁶ / ° C., preferably 1.5 × 10 ^{−6 to} 6 × 10 ⁻⁶ / ° C., more preferably. It is 2 × 10 ^{−6 to} 5 × 10 ⁻⁶ / ° C., more preferably 2.5 × 10 ⁻⁶ to 4 × 10 ⁻⁶ / ° C.
If the thermal expansion coefficient of the support substrate 1 exceeds 8 × 10 ⁻⁶ / ° C., a failure such as a crack may easily occur in the connection portion of the semiconductor chip, and if it is less than 1 × 10 ⁻⁶ / ° C. The rigidity of the substrate may be reduced.
In addition, the thermal expansion coefficient in the plane direction is a value obtained by the following method.
A test piece of 4 mm (lateral direction) × 30 mm (longitudinal direction) was cut out from the support substrate 1 and subjected to a tensile load method measurement using a thermomechanical analyzer (trade name: Q400, manufactured by TA Instruments). After mounting the test piece in the longitudinal direction on the apparatus, the test piece was measured twice continuously under the measurement conditions of a load of 5 g, a heating rate of 5 ° C./min, and a chuck distance of 10 mm. The first measurement range is 20 to 260 ° C., the second measurement range is −10 to 320 ° C., the average coefficient of thermal expansion up to 30 to 100 ° C. in the second measurement is calculated, and this is the thermal expansion in the plane direction. The coefficient value was used.

  The thickness of the support substrate 1 is preferably 60 to 400 μm, and more preferably 100 to 200 μm. When the thickness of the support substrate 1 is 60 μm or more, the strength of the temporarily fixed substrate 3 can be increased, and when it is 400 μm or less, sufficient ultraviolet light transmittance can be obtained.

The support substrate 1 transmits ultraviolet rays having an intensity of 250 mJ / s and a wavelength of 350 nm, preferably 30% or more, more preferably 40% or more, and even more preferably 50% or more. In the process of separating the temporary fixing substrate 3 and the wiring board 4 by allowing the supporting substrate 1 to transmit the ultraviolet rays of 30% or more, the adhesive force of the temporary fixing material layer 2 can be reduced in a short time, and production Can be improved.
The transmittance of ultraviolet rays having an intensity of 250 mJ / s and a wavelength of 350 nm can be measured using a spectrophotometer (manufactured by Shimadzu Corporation).

[Thermosetting resin composition]
Although the thermosetting resin composition used for the support substrate 1 is not particularly limited, it preferably contains (A) an epoxy resin and a curing agent from the viewpoints of heat resistance, mechanical strength, versatility, and thermal expansion coefficient. It is a mixture.

≪ (A) Epoxy resin≫
(A) As an epoxy resin, for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenol novolac type epoxy resin, biphenol type epoxy resin, naphthalene type epoxy resin, dicyclopentadiene type epoxy resin, biphenyl aralkyl type epoxy resin Etc. can be used. Among these, naphthalene type epoxy resins are preferable from the viewpoints of heat resistance, mechanical strength, versatility, and thermal expansion coefficient.

≪Curing agent≫
Although said (A) epoxy resin can be used independently, it is preferable to use a hardening | curing agent together.
As the curing agent, for example, an amine curing agent, a guanidine curing agent, a phenol curing agent, an acid anhydride curing agent, or the like can be used. In addition, a polyimide resin having a reactive group with an epoxy resin, a polyamideimide resin, or the like is also preferably used.
Among these, polyimide resin is preferable from the viewpoint of heat resistance, mechanical strength, versatility, and thermal expansion coefficient, and (B) an imide resin having an acidic substituent and an aromatic azomethine group (hereinafter simply referred to as “(B) Also referred to as “modified imide resin”.
Hereinafter, (B) modified imide resin preferably used in the present invention will be described.

<< (B) Imide resin having acidic substituent and aromatic azomethine group >>
(B) The modified imide resin is, for example, (a) a maleimide compound having at least two N-substituted maleimide groups in one molecule (hereinafter also referred to as “(a) maleimide compound” or “(a) component”). (B) an amino-modified siloxane compound having an aromatic azomethine group in the molecular structure (hereinafter also referred to as “(b) modified siloxane compound” or “(b) component”), and (c) an amine having an acidic substituent. It can be produced by a method of reacting a compound (hereinafter also referred to as “(c) amine compound” or “(c) component”).

  Examples of (a) maleimide compounds include bis (4-maleimidophenyl) methane, polyphenylmethanemaleimide, bis (4-maleimidophenyl) ether, bis (4-maleimidophenyl) sulfone, 3,3-dimethyl-5, 5-diethyl-4,4-diphenylmethane bismaleimide, 4-methyl-1,3-phenylene bismaleimide, m-phenylene bismaleimide, 2,2-bis (4- (4-maleimidophenoxy) phenyl) propane, etc. It is done.

  (B) As the modified siloxane compound, (d) an aromatic azomethine compound (hereinafter also referred to as “(d) component”) and (e) a siloxane compound (hereinafter also referred to as “(e) component”) are organic. It can be obtained by a dehydration condensation reaction in a solvent.

(D) The aromatic azomethine compound includes a diamine compound (i) having at least two primary amino groups in one molecule (hereinafter also referred to as “component (i)”) and at least two aldehydes in one molecule. It is obtained by subjecting an aromatic aldehyde compound (ii) having a group (hereinafter, also referred to as “component (ii)”) to a dehydration condensation reaction in an organic solvent.
Examples of the component (i) include p-phenylenediamine, m-phenylenediamine, o-phenylenediamine, 3-methyl-1,4-diaminobenzene, 2,5-dimethyl-1,4-diaminobenzene, 4, 4'-diaminodiphenylmethane, 4,4'-diamino-3,3'-dimethyldiphenylmethane, 4,4'-diamino-3,3'-diethyldiphenylmethane, 4,4'-diaminodiphenyl ether, 4,4'-diamino Diphenyl sulfone, 3,3′-diaminodiphenyl sulfone, 4,4′-diaminodiphenyl ketone, benzidine, 3,3′-dimethyl-4,4′-diaminobiphenyl, 2,2′-dimethyl-4,4′- Diaminobiphenyl, 3,3′-dihydroxybenzidine, 2,2-bis (3-amino-4-hydroxyphenyl) propane 3,3-dimethyl-5,5-diethyl-4,4-diphenylmethanediamine, 2,2-bis (4-aminophenyl) propane, 2,2-bis (4- (4-aminophenoxy) phenyl) propane, 1,3-bis (3-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene, 4,4′-bis (4-aminophenoxy) ) Biphenyl, bis (4- (4-aminophenoxy) phenyl) sulfone, bis (4- (3-aminophenoxy) phenyl) sulfone, 9,9-bis (4-aminophenyl) fluorene, and the like.
Examples of component (ii) include terephthalaldehyde, isophthalaldehyde, o-phthalaldehyde, 2,2′-bipyridine-4,4′-dicarboxaldehyde, and the like.
From the viewpoint of controlling the solubility and the molecular weight of the aromatic azomethine compound, the amount of component (i) and component (ii) used is the number of primary amino groups in component (i) [the amount of component (i) used / (i) The amount that the primary amino group equivalent of the component] is in the range of 0.1 to 5.0 times the number of aldehyde groups of (ii) component [(ii) amount of component used / (ii) aldehyde group equivalent of component]] is preferable. .
The reaction temperature of the component (i) and the component (ii) is preferably 70 to 150 ° C. from the viewpoint of not requiring a reaction rate and a high boiling point solvent.

  (E) As a siloxane compound, a commercial item can be used, for example, "PAM-E" (functional group equivalent: 130) and "KF-8010" (functional group equivalent: 430) having amino groups at both ends. , “X-22-161A” (functional group equivalent: 800), “X-22-161B” (functional group equivalent: 1500), “KF-8012” (functional group equivalent: 2200), “KF-8008” ( Functional group equivalent: 5700), “X-22-9409” (functional group equivalent: 700), “X-22-1660B-3” (functional group equivalent: 2200) [manufactured by Shin-Etsu Chemical Co., Ltd.], “ BY16-871 "(functional group equivalent: 130)," BY-16-853 "(functional group equivalent: 650)," BY-16-853B "(functional group equivalent: 2200)," BY16-853U "(functional group) Equivalent: 460 (Above, manufactured by Dow Corning Toray Co., Ltd.), and the like.

Component (d) and component (e) are used from the viewpoints of solubility in a solvent and elastic modulus of the cured product, the number of primary amino groups in component (e) [the amount of component (e) used / (e) The amount that the primary amino group equivalent of the component] is in the range of 1.0 to 10.0 times the number of aldehyde groups of the component (d) [the amount used of the component (d) / the aldehyde group equivalent of the component (d)] is preferable. .
The reaction temperature between the component (d) and the component (e) is preferably 70 to 150 ° C. from the viewpoint of not requiring a reaction rate and a high boiling point solvent.
Although it does not specifically limit as an organic solvent used for the dehydration condensation reaction of (d) component and (e) component, From a volatility viewpoint, propylene glycol monomethyl ether, toluene, etc. are used preferably. In the dehydration condensation reaction, a reaction catalyst may be used if necessary.
The weight average molecular weight (Mw) of the obtained (b) modified siloxane compound is preferably 1000 to 300000, more preferably 6000 to 150,000, from the viewpoints of solubility and the thermal expansion coefficient of the cured product.

  (C) As an amine compound, for example, o-aminophenol, m-aminophenol, p-aminophenol, o-aminobenzoic acid, m-aminobenzoic acid, p-aminobenzoic acid, o-aminobenzenesulfonic acid, m-aminobenzenesulfonic acid, p-aminobenzenesulfonic acid, 3,5-dihydroxyaniline, 3,5-dicarboxyaniline and the like can be mentioned.

The reaction temperature when reacting the components (a) to (c) is preferably 70 to 150 ° C, more preferably 100 to 130 ° C. Moreover, reaction time becomes like this. Preferably it is 0.1 to 10 hours, More preferably, it is 1 to 6 hours.
The amount of each component used when reacting the components (a) to (c) is the number of maleimide groups in the component (a) from the viewpoint of the heat resistance of the cured product and the solubility in organic solvents [use of the component (a) Amount / maleimide group equivalent of component (a)] is the sum of the number of primary amino groups in components (b) and (c) [(amount of component (b) / equivalent primary amino group equivalent of component (b)) + ( (C) Use amount of component / (primary amino group equivalent of component (c))] is preferably in the range of 2.0 to 10.0 times.
Moreover, the usage-amount of (a) component becomes like this. Preferably it is 50-3000 mass parts with respect to 100 mass parts of (b) component, More preferably, it is 100-1500 mass parts. When the amount of the component (a) used is 50 parts by mass or more with respect to 100 parts by mass of the component (b), a decrease in heat resistance can be suppressed, and when it is 3000 parts by mass or less, low thermal expansion is achieved. Can keep good.
Moreover, the usage-amount of (c) component becomes like this. Preferably it is 1-1000 mass parts with respect to 100 mass parts of (b) component, More preferably, it is 5-500 mass parts. (C) When the usage-amount of a component is 1 mass part or more with respect to 100 mass parts of (b) component, a heat resistant fall can be suppressed, and low thermal expansion property is favorable as it is 1000 mass parts or less. Can be kept in.
The reactions of the components (a) to (c) are preferably performed in an organic solvent. Preferred examples of the organic solvent include cyclohexanone, propylene glycol monomethyl ether, dimethylacetamide and the like from the viewpoint of low toxicity, high volatility, and difficulty in remaining as a residual solvent. Moreover, you may use together a hardening | curing agent and a radical initiator for reaction of (a)-(c) component as needed.

The compounding quantity of the hardening | curing agent in a thermosetting resin composition is not specifically limited, What is necessary is just to determine suitably according to the kind of thermosetting resin and hardening | curing agent to be used.
For example, when an epoxy resin is used as the thermosetting resin, the active hydrogen equivalent of the functional group having reactivity with the epoxy resin in the curing agent is preferably 0.50 with respect to 1 equivalent of the epoxy group in the epoxy resin. To 1.50 equivalents, more preferably 0.75 to 1.25 equivalents, and still more preferably 0.90 to 1.10 equivalents. When the blending amount of the curing agent is within the above range, the resulting cured product has excellent heat resistance and mechanical properties.
Examples of the functional group having reactivity with the epoxy resin include a phenolic hydroxyl group, a primary amino group, a secondary amino group, and a carboxy group.

  The thermosetting resin composition may contain a curing accelerator, a thermoplastic elastomer, an inorganic filler, and other components as necessary in addition to the above components.

≪Curing accelerator≫
The curing accelerator is not particularly limited. When an epoxy resin is used as the thermosetting resin, a heterocyclic compound such as imidazole; a secondary amine compound; a tertiary amine compound; an organic phosphine such as triphenylphosphine. Compounds: Onium salt compounds such as quaternary ammonium salts, tetraphenylphosphonium salts, tetraphenylborate salts and the like can be preferably used.

≪Thermoplastic elastomer≫
Examples of the thermoplastic elastomer include styrene elastomers, olefin elastomers, urethane elastomers, polyester elastomers, polyamide elastomers, acrylic elastomers, silicone elastomers, and derivatives thereof. These have a hard segment component and a soft segment component. In general, the former contributes to heat resistance and strength, and the latter contributes to flexibility and toughness. These may be used alone or in combination of two or more.
Moreover, as a thermoplastic elastomer, what has a reactive functional group in a molecular terminal or a molecular chain can be used. Examples of the reactive functional group include an epoxy group, a hydroxyl group, a carboxy group, an amino group, an amide group, an isocyanato group, an acryl group, a methacryl group, and a vinyl group. The thermoplastic elastomer has these reactive functional groups in the molecular terminal or molecular chain, thereby improving the compatibility with the resin and more effectively reducing the internal stress generated during the curing of the thermosetting resin composition. Can be reduced.
The blending amount of the thermoplastic elastomer is preferably 0.1 to 50 parts by mass, more preferably 2 to 30 parts by mass with respect to 100 parts by mass of the total solid resin component in the thermosetting resin composition. . When the blending amount of the thermoplastic elastomer is within the above range, the compatibility with the resin is excellent, and the low curing shrinkage and low thermal expansion of the cured product can be effectively expressed.

≪Inorganic filler≫
The thermosetting resin composition used in the present invention may contain an inorganic filler such as alumina, silica, aluminosilicate, aluminum hydroxide, and inorganic hydrate within the range that does not impair the effects of the present invention. Good. Among these, silica is preferable and fused spherical silica is more preferable from the viewpoints of heat resistance and low thermal expansion.
The blending amount of the inorganic filler in the thermosetting resin composition is preferably 20 to 300 parts by mass, and more preferably 50, with respect to 100 parts by mass of the total solid resin component in the thermosetting resin composition. -250 mass parts, More preferably, it is 100-200 mass parts. Excellent heat resistance, mechanical strength, and thermal expansion when the blending amount of the inorganic filler is 20 parts by mass or more with respect to 100 parts by mass of the total solid resin component in the thermosetting resin composition. A coefficient is obtained, and when it is 300 parts by mass or less, excellent moldability and ultraviolet transmittance are obtained.
When fused spherical silica is used as the inorganic filler, the average particle size is preferably 0.1 to 10 μm, more preferably 0.3 to 8.0 μm. When the average particle diameter of the fused spherical silica is 0.1 μm or more, the fluidity when the resin is highly filled can be kept good, and when it is 10 μm or less, the mixing probability of the coarse particles is reduced, and the coarse particles It is possible to suppress the occurrence of defects due to this.
Here, the average particle diameter means the particle diameter at a point corresponding to a volume of 50% when the cumulative frequency distribution curve by the particle diameter is obtained with the total volume of the particles being 100%, and the laser diffraction scattering method is used. It can be measured with a particle size distribution measuring device.

≪Other ingredients≫
The thermosetting resin composition may contain a flame retardant. As the flame retardant, a conventionally known flame retardant can be used, and a halogen-containing resin, a phosphorus-containing resin, a nitrogen-containing resin, or the like may be used in combination.
In addition, it is preferable not to use UV shielding agent from a viewpoint of ensuring the transmittance | permeability of an ultraviolet-ray.

The thermosetting resin composition is preferably obtained as a varnish containing the thermosetting resin composition from the viewpoint of impregnating or coating the glass cloth.
The varnish containing the thermosetting resin composition can be obtained by a method of dispersing or dissolving the above components in an organic solvent. The respective components may be mixed using a known disperser or the like after being put into an organic solvent, or may be mixed in a solid or molten state as necessary before being put into the organic solvent.
Although it does not restrict | limit especially as an organic solvent used for a varnish, For example, Ketone type | system | group solvents, such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone; Alcohol type solvents, such as methyl cellosolve; Ether type solvents, such as tetrahydrofuran; Toluene, xylene, mesitylene And aromatic solvents such as These can be used alone or in combination of two or more.
The content of the thermosetting resin composition in the varnish containing the thermosetting resin composition is preferably 40 to 90% by mass, and more preferably 50 to 80% by mass of the entire varnish. When the content of the thermosetting resin composition in the varnish is within the above range, it is possible to maintain a good coating property and obtain a composite material having an appropriate resin composition adhesion amount.

〔Glass cloth〕
The support substrate 1 used in the present invention includes a glass cloth.
The production method of the present invention uses a substrate obtained by curing a composite material containing a glass cloth and a thermosetting resin composition as the support substrate 1, so that an ultraviolet ray as in a generally used metal plate is used. Since the transmission is not significantly hindered, an ultraviolet peeling adhesive can be used as the temporary fixing material layer 2 of the temporary fixing substrate 3. Thereby, the temporarily fixed substrate 3 used in the present invention can be easily removed by irradiation with ultraviolet rays. Furthermore, since it is superior in mechanical strength to the glass substrate, it is not easily damaged in the wiring board transport process, and it is not melted during reflow heating like an acrylic board, so that the yield and handling properties of the wiring board are also excellent.

The material of the glass cloth is not particularly limited, and examples thereof include E glass, D glass, S glass, and Q glass depending on the ratio of the components. Among these, aluminosilicate glass which is generally widely used for glass cloth for fiber reinforced plastic (FRP) is preferable, and the silica component can be effectively reduced because the thermal expansion coefficient of the cured prepreg can be effectively reduced. S glass that has been increased to lower the thermal expansion coefficient is more preferred.
As content of the silica in a glass cloth, Preferably it is 60-70 mass%, More preferably, it is 64-66 mass%. If the silica content in the glass cloth is 60% by mass or more, the effect of reducing the thermal expansion coefficient is improved, and if it is 70% by mass or less, the glass cloth is difficult to break and the mechanical strength of the support substrate 1 is improved. Can be made.

  The thickness of the glass cloth may be appropriately determined according to the required thickness of the support substrate 1, but is preferably 40 to 380 μm, and more preferably 80 to 180 μm. When the thickness of the glass cloth is 40 μm or more, the strength of the temporarily fixed substrate 3 can be increased, and when it is 380 μm or less, sufficient ultraviolet light permeability can be obtained and productivity can be increased.

[Manufacturing method of support substrate 1]
Although the manufacturing method of the support substrate 1 is not specifically limited, For example, after impregnating or apply | coating the varnish of the said thermosetting resin composition to the said glass cloth, it can manufacture by the method of drying and hardening processing.
Although the adhesion amount of the thermosetting resin composition with respect to glass cloth is not specifically limited, For example, it is the quantity used as 20-90 mass% in conversion of solid content of the support substrate 1 after drying.
Moreover, after impregnating or applying the varnish of the thermosetting resin composition to a glass cloth, for example, by heating and drying at a temperature of 100 to 200 ° C. for 1 to 30 minutes and semi-curing (B-stage), glass is obtained. A composite material containing a cloth and a thermosetting resin composition can be obtained.
The method for curing the composite material is not particularly limited, and examples thereof include a method using a vacuum press, a vacuum laminator, and the like. When manufacturing the support substrate 1 using a vacuum press, it is preferable to shape | mold in the range of the molding temperature of 100-250 degreeC, the shaping | molding pressure of 0.2-10 MPa, and the heating time of 0.1-5 hours, for example. When the support substrate 1 is manufactured using a vacuum laminator, for example, the pressure bonding temperature (laminating temperature) is preferably 70 to 140 ° C., the pressure bonding pressure is preferably 0.1 to 1.1 MPa, and the air pressure is 20 mmHg (26. It is preferable to laminate under a reduced pressure of 7 hPa) or less. The laminating method may be a batch method or a continuous method using a roll.

(Temporary fixing material layer 2)
The temporary fixing material layer 2 is a layer in which the adhesive strength with the adherend is reduced by irradiation with ultraviolet rays.
The temporary fixing substrate 3 used in the present invention uses the temporary fixing material layer 2 whose adhesive strength to the adherend is reduced by irradiation of ultraviolet rays as the pressure-sensitive adhesive layer by using the supporting base material 1 having transparency. Can do. As a result, it does not peel off during reflowing, such as a heat release sheet that separates from the adherend by heating, and the wiring board does not peel off from the adherend by solvent immersion. No peeling during the manufacturing process.
Although the thickness of the temporary fixing material layer 2 is not particularly limited, it is preferably 2 to 30 μm, more preferably 4 to 20 μm, from the viewpoint of obtaining sufficient adhesive strength.

  Next, each process of the manufacturing method of this invention is demonstrated.

<Steps 1-3>
The manufacturing method of this invention has the following processes 1-3.
Step 1: Step of temporarily fixing the wiring board 4 to the temporarily fixed substrate 3 Step 2: Step of mounting the semiconductor chip 7 on the wiring board 4 temporarily fixed in Step 1 Step 3: Wiring the temporary fixed substrate 3 A process of separating the temporarily fixed substrate 3 and the wiring board 4 by irradiating ultraviolet rays from the surface opposite to the surface on which the plate 4 is temporarily fixed.

(Process 1)
Step 1 is a step of temporarily fixing the wiring board 4 to the temporary fixing substrate 3 as shown in FIG.
The wiring board 4 is not particularly limited, and a wiring board according to the purpose may be used. For example, as shown in FIG. 2, a wiring board 4 formed by alternately laminating a wiring layer 5 made of a metal member such as copper in advance and an insulating layer 6 may be attached to the temporary fixing substrate 3, After bonding only the insulating layer 6 to the temporarily fixed substrate 3, the wiring layer 5 and the insulating layer 6 may be repeatedly formed to form a multilayer wiring board on the temporarily fixed substrate 3.
As the insulating layer 6, a conventionally known insulating material can be used. For example, a buildup film, a prepreg in which a glass cloth is impregnated with a thermosetting resin, or a solder resist can be applied.
There is no restriction | limiting in particular as a formation method of the insulating layer 6, Lamination, a press, etc. can be used. Further, via holes, through holes and the like may be formed in the insulating layer 6 using a laser or the like. After forming the via hole, if necessary, it may be processed using a chemical solution such as a desmear solution or a developer.
As the formation process of the wiring layer 5, a known subtractive method, semi-additive method, additive method, or the like can be applied.
There is no restriction | limiting in particular in the lamination number of the insulating layer 6 and the wiring layer 5, and the lamination order.

(Process 2)
Step 2 is a step of mounting the semiconductor chip 7 on the wiring board 4 temporarily fixed in Step 1, as shown in FIG.

[Semiconductor chip 7]
The semiconductor chip 7 is not particularly limited, and a conventionally known semiconductor chip can be used.
As a material of the semiconductor chip 7 used in the manufacturing method of the present invention, a conventionally known semiconductor chip wafer can be used. For example, an elemental semiconductor composed of the same kind of elements such as silicon and germanium, gallium arsenide, gallium Compound semiconductors such as phosphorus, indium phosphorus, and silicon carbide can be used.
The semiconductor chip 7 has a connection portion 8. As the connection portion 8, a solder ball, a bump in which solder is disposed at the tip of a copper post, or the like is used. As the solder, lead-free solder such as tin-silver-copper alloy or tin bismuth is preferably used from the viewpoint of environment, but the material and shape are not particularly limited.

As a method for mounting the semiconductor chip 7 on the wiring board 4, a known method can be used. For example, flip chip mounting using reflow, local reflow, or the like is preferable.
For example, after the semiconductor chip 7 and the wiring board 4 are aligned, they can be temporarily fixed and mounted by a method of reflowing by heating above the melting temperature of solder. The reflow temperature is not particularly limited as long as it is equal to or higher than the melting temperature of the solder, but is preferably 220 to 280 ° C, more preferably 230 to 270 ° C, and further preferably 240 to 260 ° C.
Further, if necessary, a semiconductor such as a die bonding material, a connection film such as an anisotropic conductive film (ACF), or a connection paste such as a non-conductive paste (NCP: Non-Conductive Paste) is used. The chip 7 may be attached.

The semiconductor chip 7 may be sealed with a sealing material 9 as shown in FIG. The sealing may be a whole surface sealing or a part thereof may be exposed.
Further, the gap between the semiconductor chip 7 and the wiring board 4 may be sealed by being filled with a sealing material such as underfill, if necessary.
As the sealing material 9, a conventionally known semiconductor sealing material can be used. For example, a thermosetting resin composition containing an epoxy resin, a curing agent for epoxy resin, and an inorganic filler can be preferably used. .

(Process 3)
Step 3 is a step of separating the temporary fixing substrate 3 and the wiring board 4 by irradiating the temporary fixing substrate 3 with ultraviolet rays from a surface opposite to the surface on which the wiring board 4 is temporarily fixed. .
As the ultraviolet rays, it is preferable to irradiate ultraviolet rays having a wavelength of 350 nm with an irradiation amount of 100 to 1500 mJ, and more preferably with an irradiation amount of 200 to 1000 mJ. When the irradiation amount is in the above range, the adhesive force with the adherend can be sufficiently reduced, and productivity can be improved without requiring a long time for separation.
In addition, the ultraviolet light may be applied to the entire temporarily fixed substrate 3 to be peeled off at one time, or a part of the temporarily fixed substrate 3 may be shielded from light, and only the temporarily fixed base material layer 2 at a specific site may be adhered. And may be separated into a plurality of times, such as by irradiating ultraviolet rays again later.
Moreover, after separating the support substrate 1, as shown in FIG. 6, you may dice to a predetermined magnitude | size as needed.

[Temporary fixed substrate]
The temporarily fixed substrate of the present invention is used in the method for manufacturing a semiconductor device of the present invention, and is a temporarily fixed substrate in which a temporarily fixed material layer is arranged on one surface of a support substrate, and the support substrate is made of glass. A substrate obtained by curing a composite material containing a cloth and a thermosetting resin composition, and the thermal expansion coefficient in the plane direction of the support substrate is 1 × 10 ⁻⁶ to 8 × 10 ⁻⁶ / ° C. The temporary fixing material layer is a layer in which the adhesive strength with the adherend is reduced by irradiation with ultraviolet rays.
The aspect of the temporarily fixed substrate of the present invention is the same as the temporarily fixed substrate mentioned in the method for manufacturing a semiconductor device of the present invention, and the preferable aspect is also the same.

The temporarily fixed substrate of the present invention has a substrate formed by curing a composite material containing glass cloth and a thermosetting resin as a supporting substrate. Therefore, according to the method for manufacturing a semiconductor device using the temporarily fixed substrate, the supporting substrate is supported. The semiconductor chip can be reflow mounted on the temporarily fixed wiring board without removing the substrate.
In addition, since the temporary fixing substrate of the present invention has the support substrate, its thermal expansion coefficient is close to the thermal expansion coefficient of the semiconductor chip. Therefore, according to the method of manufacturing a semiconductor device using the temporarily fixed substrate, it is considered that a failure such as a crack hardly occurs at the connection portion between the semiconductor chip and the wiring board when the semiconductor chip is mounted.
Moreover, since the said support substrate can permeate | transmit an ultraviolet-ray, the temporary fixing material layer from which adhesive force falls by irradiation of an ultraviolet-ray can be used as an adhesion layer. Therefore, according to the method of manufacturing a semiconductor device using the temporarily fixed substrate, it is possible to easily separate the temporarily fixed substrate after manufacturing the semiconductor device, and it is not necessary to perform complicated work such as metal etching. Excellent device productivity.

DESCRIPTION OF SYMBOLS 1 Support substrate 2 Temporary fixing material layer 3 Temporary fixing substrate 4 Wiring board 5 Wiring layer 6 Insulating layer 7 Semiconductor chip 8 Connection part 9 Sealing material

Claims (7)

A method for manufacturing a semiconductor device using a temporary fixing substrate in which a temporary fixing material layer is arranged on one surface of a support substrate,
The support substrate is a substrate obtained by curing a composite material containing glass cloth and a thermosetting resin composition, and the thermal expansion coefficient in the plane direction of the support substrate is 1 × 10 ⁻⁶ to 8 × 10. ⁻⁶ / ° C.
The method for manufacturing a semiconductor device, wherein the temporary fixing material layer is a layer whose adhesion to an adherend is reduced by irradiation with ultraviolet rays, and includes the following steps 1 to 3.
Step 1: Step of temporarily fixing a wiring board to the temporary fixing substrate Step 2: Step of reflow mounting a semiconductor chip on the wiring board temporarily fixed at Step 1 Step 3: Temporarily fixing the wiring substrate to the temporary fixing substrate Process of separating the temporarily fixed substrate and the wiring board by irradiating ultraviolet rays from the surface opposite to the finished surface   2. The method of manufacturing a semiconductor device according to claim 1, wherein the support substrate transmits at least 30% of ultraviolet rays having an intensity of 250 mJ / s and a wavelength of 350 nm.   The method for manufacturing a semiconductor device according to claim 1, wherein the support substrate has a thickness of 60 to 400 μm.   The thermosetting resin composition has (A) an epoxy resin, (a) a maleimide compound having at least two N-substituted maleimide groups in one molecule, and (b) an aromatic azomethine group in the molecular structure. The amino-modified siloxane compound, and (c) an imide resin having an acidic substituent and an aromatic azomethine group obtained by reacting an amine compound having an acidic substituent. A method for manufacturing the semiconductor device according to the item.   The method for manufacturing a semiconductor device according to claim 4, wherein the thermosetting resin composition further contains an inorganic filler. The method for manufacturing a semiconductor device according to claim 1, wherein the reflow temperature is 220 to 280 ° C. 6. A temporary fixing substrate in which a temporary fixing material layer is disposed on one surface of the supporting substrate, wherein the supporting substrate is a substrate obtained by curing a composite material containing a glass cloth and a thermosetting resin composition, In addition, the thermal expansion coefficient in the plane direction of the support substrate is 1 × 10 ⁻⁶ to 8 × 10 ⁻⁶ / ° C., and the temporary fixing material layer is a layer whose adhesive force with the adherend is reduced by irradiation with ultraviolet rays. The temporary fixed board | substrate used for the manufacturing method of the semiconductor device of any one of Claims 1-6 .