JP6444446B2 - ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE AND METHOD FOR PRODUCING ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE - Google Patents

Description

  The present invention relates to an organic electroluminescence display device and a method for manufacturing the organic electroluminescence display device.

  As a thin and light-emitting source, an organic electroluminescent element has attracted attention, and an image display device including a large number of organic electroluminescent elements has been developed. An organic electroluminescence light emitting element has a structure in which an organic layer having a light emitting layer is sandwiched between an anode and a cathode.

  Patent Document 1 discloses a configuration in which the upper surface of an organic layer is covered with a sealing film as such an organic electroluminescence display device. The sealing film is formed by laminating a decoupling layer that is a planarizing material and a barrier layer that prevents moisture from entering. Further, the outer edge of the decoupling layer is also covered with the barrier layer.

Japanese Patent No. 4303591

  However, according to the configuration of Patent Document 1, scratches and the like are generated in the barrier layer covering the upper surface of the decoupling layer, so that moisture may penetrate into the decoupling layer therefrom. In addition, if the top surface of the decoupling layer is uneven, the barrier layer formation around the unevenness is hindered in the step of forming the barrier layer. For this reason, there exists a possibility that a water | moisture content may osmose | permeate into a decoupling layer from the periphery of an unevenness | corrugation.

  The sealing film is formed in common over a plurality of pixels. For this reason, when water penetrates into the decoupling layer, the water diffuses over a plurality of pixels. Then, since the decoupling layer in which moisture is diffused expands and peels from the barrier layer, problems such as a decrease in luminance and a decrease in strength of the organic electroluminescence display device occur. For this reason, it has been difficult to achieve higher luminance and improved reliability of the organic electroluminescence display device.

  This invention is made | formed in view of such a situation, Comprising: It aims at implement | achieving the improvement in the brightness of an organic electroluminescent display apparatus, and the improvement of reliability.

  An organic electroluminescence display device according to the present invention includes a substrate, a plurality of organic electroluminescence light emitting elements disposed on the substrate, an insulating film disposed on the substrate, and the plurality of organic electroluminescence light emitting elements. A sealing film covering the insulating film; and a flexible circuit board disposed on the substrate. Each of the plurality of organic electroluminescence light emitting elements includes an anode, an organic light emitting layer on the anode, A cathode on the organic light emitting layer, the insulating film has an opening exposing a part of the upper surface of the anode, covers an outer peripheral end of the anode, and the sealing film is made of silicon. A first barrier layer having a nitride film or a silicon oxynitride film and a silicon oxide film or an amorphous silicon film covering the upper surface of the first barrier layer and having a thickness different from that of the first barrier layer. A thin underlayer, an organic layer covering a part of the upper surface of the underlayer, and a second barrier layer covering the organic layer and the underlayer and having a silicon oxynitride film or a silicon nitride film, A first region in which the barrier layer, the base layer, and the second barrier layer are stacked and the organic layer is not disposed; the first barrier layer, the base layer, the organic layer, and the second barrier layer are stacked; A second region is on the substrate.

  An organic electroluminescence display device according to the present invention includes a substrate, a plurality of pixels disposed on the substrate, a sealing film covering the plurality of pixels, and a flexible circuit substrate disposed on the substrate. Each of the plurality of pixels includes an organic electroluminescent light emitting element and a thin film transistor connected to the organic electroluminescent light emitting element, and the sealing film includes a first barrier layer and the first barrier layer A base layer that covers the top surface of the base layer and is thinner than the first barrier layer; an organic layer that covers a portion of the top surface of the base layer to cover the step of the base layer; and the organic layer and the base layer A plurality of first regions in which the first barrier layer, the base layer, and the second barrier layer are stacked and the organic layer is not disposed, the first barrier layer, A plurality of second regions in which a base layer, the organic layer, and the second barrier layer are laminated are on the substrate, and in cross-sectional view, one second region is sandwiched between two first regions, In viewing, one first region is sandwiched between two second regions.

  An organic electroluminescence display device according to the present invention includes a first substrate, a plurality of organic electroluminescence light emitting elements disposed on the first substrate, an insulating film disposed on the first substrate, and the plurality of the plurality of organic electroluminescence light emitting elements. A sealing film covering the organic electroluminescence light emitting element and the insulating film, a filler disposed on the sealing film and thicker than the sealing film, and a second substrate on the filler, Each of the plurality of organic electroluminescence light emitting elements has an anode, an organic light emitting layer on the anode, and a cathode on the organic light emitting layer, and the insulating film exposes a part of the upper surface of the anode. An opening that covers the outer peripheral edge of the anode, and the sealing film covers the first barrier layer and the upper surface of the first barrier layer and is thinner than the first barrier layer. And covering a part of the upper surface of the underlayer An organic layer, and a second barrier layer that covers the organic layer and the base layer and is thicker than the base layer, and the first barrier layer, the base layer, and the second barrier layer are laminated, and A first region in which no organic layer is disposed and a second region in which the first barrier layer, the base layer, the organic layer, and the second barrier layer are stacked are on the first substrate.

FIG. 1 is a schematic plan view of an organic electroluminescence display device according to an embodiment of the present invention. FIG. 2 is a schematic sectional view taken along the line II-II of the organic electroluminescence display device shown in FIG. FIG. 3 is a partial enlarged view of region III of the organic electroluminescence display device shown in FIG. FIG. 4 is a partially enlarged view of the IV region of the organic electroluminescence display device shown in FIG. FIG. 5 is a schematic cross-sectional view taken along the line VV of the organic electroluminescence display device shown in FIG. FIG. 6 is a schematic cross-sectional view corresponding to a line VV for explaining a method for manufacturing an organic electroluminescence display device according to an embodiment of the present invention. FIG. 7 is a schematic cross-sectional view corresponding to a VV cut line for explaining a method of manufacturing an organic electroluminescence display device according to an embodiment of the present invention. FIG. 8 is a schematic cross-sectional view corresponding to a VV cut line for explaining a method of manufacturing an organic electroluminescence display device according to an embodiment of the present invention. FIG. 9 is a flowchart for explaining a method of manufacturing an organic electroluminescence display device according to an embodiment of the present invention. FIG. 10 is a plan view of a pixel portion of an organic electroluminescence display device according to an embodiment of the present invention. FIG. 11 is a schematic cross-sectional view corresponding to the VI-VI cutting line of the organic electroluminescence display device shown in FIG.

  Hereinafter, an organic electroluminescence display device 1 according to an embodiment of the present invention will be described with reference to the drawings. Note that the drawings referred to in the following description may show the features that are enlarged for convenience in order to make the features easier to understand, and the dimensional ratios of the respective components are not always the same as the actual ones. Absent. In addition, the materials and the like exemplified in the following description are examples, and each component may be different from them, and can be changed and implemented without changing the gist thereof.

  FIG. 1 is a schematic plan view of an organic electroluminescence display device 1 according to this embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view taken along the line II-II of the organic electroluminescence display device 1 shown in FIG.

  The organic electroluminescence display device 1 according to this embodiment includes a substrate 10, a circuit layer 12, an organic electroluminescence light emitting element 30, a sealing film 40, and a counter substrate 50.

  The substrate 10 is an insulating substrate and is a member on which a thin film transistor 11 and an organic electroluminescence light emitting element 30 described later are formed. An organic electroluminescence light emitting element 30 is provided on the upper surface 10 a of the substrate 10. In addition, although the organic electroluminescent light emitting element 30 is provided with two or more by the upper surface 10a of the board | substrate 10, detailed illustration is abbreviate | omitted in FIG. 2 for convenience of explanation.

  The organic electroluminescent light emitting element 30 is provided in a display region D having an outer periphery smaller than the substrate 10 in a plan view, for example, and a filler (not shown) is weired in the outer region as shown in FIG. A weir DM for stopping is arranged. In a region corresponding to the display region D on the substrate 10, wirings such as control signal lines, data signal lines, and power supply lines (not shown) are provided. In the display area D, a large number of pixels are regularly arranged, for example, in a matrix.

A flexible circuit board 2 is connected to a region 10 a ₁ where the organic electroluminescence light emitting element 30 is not formed on the upper surface 10 a of the substrate 10, and a driver 3 is further provided. The driver 3 is a driver to which image data is supplied from the outside of the organic electroluminescence display device 1 through the flexible circuit board 2. When the driver 3 is supplied with the image data, the driver 3 supplies the organic electroluminescence light emitting element 30 with a voltage signal applied to each pixel via a data line (not shown).

  Next, the detail is demonstrated about the structure of the display area D of the organic electroluminescent display apparatus 1. FIG. FIG. 3 is a partial enlarged view of region III of the organic electroluminescence display device 1 shown in FIG. This III region is a region corresponding to one pixel P in the display region D. On the substrate 10 in the III region, the circuit layer 12, the organic electroluminescence light emitting element 30, the sealing film 40, the filler 45, and the counter substrate 50 are laminated.

  The circuit layer 12 is a layer in which an electric circuit for controlling the amount of current flowing through each pixel P is regularly arranged. The circuit layer 12 includes, for example, a thin film transistor 11 and a passivation film 13.

  The thin film transistor 11 is a transistor for driving the organic electroluminescence light emitting element 30, and is provided for each pixel P on the substrate 10. Specifically, the thin film transistor 11 includes, for example, a polysilicon semiconductor layer 11a, a gate insulating layer 11b, a gate gate electrode 11c, a source / drain electrode 11d, a first insulating film 11e, and a second insulating film 11f.

The passivation film 13 is formed so as to cover the thin film transistor 11. By forming the passivation film 13 on the thin film transistor 11, the adjacent thin film transistors 11 and the thin film transistors 11 and the organic electroluminescence light emitting elements 30 are electrically insulated. In the passivation film 13, a contact hole 32 a that connects the thin film transistor 11 to the organic electroluminescence light emitting element 30 is formed for each pixel P. The passivation film 13 is made of an insulating material such as SiO ₂ , SiN, acrylic, or polyimide. By using an organic polymer resin such as acrylic or polyimide as the material of the passivation film 13, the upper surface of the passivation film 13 can be flattened, and the formation of the organic electroluminescence light emitting element is facilitated.

  Note that the configuration of the circuit layer 12 is not limited to the above configuration, and may include an appropriate insulating layer, a scanning signal line, a video signal line, a power supply line, a ground line, and the like.

  In the region corresponding to each pixel P on the passivation film 13, the reflective film 31 may be formed in a matrix. The reflection film 31 is provided to reflect the light emitted from the organic electroluminescence light emitting element 30 toward the sealing film 40 side. The reflective film 31 is preferably as the light reflectance is high. For example, a metal film made of aluminum, silver (Ag), or the like can be used.

  On the passivation film 13, for example, a plurality of organic electroluminescence light emitting elements 30 are formed. The organic electroluminescence light emitting element 30 is formed so as to cover a pixel electrode (anode) 32 controlled by a thin film transistor, an organic layer 33 having at least a light emitting layer disposed on the pixel electrode 32, and the organic layer 33. The counter electrode (cathode) 34 functions as a light emission source. In this embodiment, the pixel electrode 32 is used as an anode and the counter electrode 34 is used as a cathode. However, the pixel electrode 32 may be used as a cathode and the counter electrode may be used as an anode.

  The anode 32 is formed in a matrix corresponding to each pixel P. The anode 32 is connected to the drain electrode of the thin film transistor 11 through the contact hole 32a. With this configuration, the anode 32 is electrically connected to the driving thin film transistor 11, and the driving current supplied from the thin film transistor 11 is injected into the organic layer 33 through the anode 32.

  The anode 32 is made of a material having translucency and conductivity. Specifically, the material of the anode 32 is preferably, for example, ITO (Indium Tin Oxide), but IZO (indium zinc composite oxide), tin oxide, zinc oxide, indium oxide, aluminum oxide composite oxide, etc. A material having translucency and conductivity may be used. In particular, since the anode 32 is in contact with a hole injection layer of the organic layer 33 described later, the material is preferably as having a higher work function.

  If the reflective film 31 is made of a metal such as silver and is in contact with the anode 32, the reflective film 31 becomes a part of the anode 32.

  A pixel separation film 14 is formed between adjacent anodes 32. The pixel separation film 14 has a function of preventing contact between adjacent anodes 32 and leakage current between the anode 32 and the cathode 34. The pixel separation film 14 is formed, for example, along the boundary between adjacent pixels P in plan view, thereby covering the outer peripheral end of the anode 32. In the opening of the pixel separation film 14, the anode 32 and the organic layer 33 are in contact with each other. The pixel separation film 14 is made of an insulating material, specifically, for example, a photosensitive resin composition.

  The organic layer 33 having a light emitting layer is formed so as to cover the anode 32. The organic layer 33 has a function of emitting light, and the light emission may be white or other colors. The organic layer 33 may be formed for each pixel P, or may be formed so as to cover the entire area of the display area D where the pixels P are arranged.

  For example, the organic layer 33 is formed by laminating a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer (not shown) in order from the anode 32 side. In addition, the laminated structure of the organic layer 33 is not restricted to what was mentioned here, The laminated structure is not specified if it contains a light emitting layer at least.

  The light emitting layer is made of, for example, an organic electroluminescent material that emits light by recombination of holes and electrons. As such an organic electroluminescent substance, for example, a material generally used as an organic light emitting material may be used. Specifically, for example, a coumarin type, a perylene type, a pyran type, an anthrone type, a porphyrene type, a quinacridone type, N, N'-dialkyl substituted quinacridone series, naphthalimide series, N, N'-diaryl substituted pyrrolopyrrole series, etc., known fluorescent low molecular weight materials capable of emitting light from a singlet state, and triplet states of rare earth metal complexes A known phosphorescent low molecular weight material capable of emitting light can be used.

  The cathode 34 is formed so as to cover the organic layer 33. The cathode 34 is not independent for each pixel P, and is formed so as to cover the entire area of the display area D where the pixels P are arranged. By having such a configuration, the cathode 34 is in common contact with the organic layers 33 of the plurality of organic electroluminescence light emitting elements 30.

  The cathode 34 is made of a material having translucency and conductivity. Specifically, the material of the cathode 34 is preferably, for example, ITO. However, a conductive metal oxide such as ITO or IZO mixed with a metal such as silver or magnesium, or a metal thin film such as silver or magnesium. And a conductive metal oxide may be laminated.

  An upper surface 34 a of the cathode 34 on the organic electroluminescence light emitting element 30 is covered with a sealing film 40 over a plurality of pixels P. The sealing film 40 is a transparent film that protects the organic layer 33 and other layers by preventing entry of oxygen and moisture. The sealing film 40 in the present embodiment includes a first barrier layer 40a, a base layer 40b, an intermediate layer 40c, and a second barrier layer 40d.

  The first barrier layer 40 a has a function of preventing oxygen and moisture from entering the organic electroluminescence light emitting element 30. Examples of the material of the first barrier layer 40a include SiN, SiON, and SiO. However, the material is not limited thereto as long as it has a barrier property against moisture and oxygen. The first barrier layer 40a is formed so as to cover the entire area of the display area D where the pixels P are arranged.

Upper surface 40a ₁ of the first barrier layer 40a is covered by the base layer 40b. The underlayer 40b has an affinity for the material of the intermediate layer 40c. The underlayer 40b is formed so as to cover the entire surface of the first barrier layer 40a. Further, as the material of the underlayer 40b, for example, a-Si (amorphous silicon), SiO ₂ , or SiO can be used, but if the material has lyophilicity with respect to the material of the intermediate layer 40c, the material is here. It is not limited to those listed.

The intermediate layer 40c is locally formed on the upper surface 40b ₁ of the base layer 40b. The intermediate layer 40c has a function of covering the locally protruding portion of the top surface 40b ₁ of the base layer 40b. Hereinafter, the details of the configuration of the intermediate layer 40c will be described.

  The second barrier layer 40 d has a function of preventing oxygen and moisture from entering the organic electroluminescence light emitting element 30. Examples of the material of the second barrier layer 40d include SiN, SiON, and SiO. However, the material is not limited to these as long as it has a barrier property against moisture and oxygen. The second barrier layer 40d is formed so as to cover the entire area of the display area D where the pixels P are arranged.

  4 is a partially enlarged view of the IV region of the organic electroluminescence display device 1 shown in FIG. 1, and FIG. 5 is a schematic cross-sectional view taken along the line VV of the organic electroluminescence display device 1 shown in FIG. 4 and 5 are cross-sectional views showing a state in which a foreign matter 41a such as dust attached to the cathode 34 which is a counter electrode in the region of the pixel P is covered with the sealing film 40. FIG. FIG. 5 shows an example of a configuration in which a locally projecting portion 41 is formed when the foreign matter 41a is covered with the barrier layer 40a and the base layer 40b. For convenience of explanation, in FIG. 4, description of a counter substrate 50, a filler 45, and a second barrier layer 40 d described later is omitted.

The projecting portion 41 is caused in the manufacturing steps of the first barrier layer 40a and the base layer 40b, of the irregularities on the upper surface 40b ₁ of the base layer 40b, a convex having a height that exceeds the range of errors due to the manufacturing process Part. Specifically, for example, there are convex portions caused by bubbles generated by the manufacturing process, and convex portions caused by foreign matter 41a such as dust attached on the cathode 34, the first barrier layer 40a, or the base layer 40b.

In the present embodiment, the operation of the present invention when the foreign matter 41a adheres to the cathode 34 will be described. In particular, the organic electroluminescence display device 1 having the protruding portion 41 will be described as an example. Portion 41 in the example of this embodiment, a foreign matter 41a, the first barrier layer covering part 40a ₂ is a portion that covers the foreign matter 41a of the first barrier layer 40a, a first barrier layer covering portion 40a of the base layer 40b ₂ and a base layer covering portion 40b ₂ that is a portion covering ₂ .

Step S between the upper surface 40b ₁ of the part 41 and the base film 40b is covered with the intermediate layer 40c. Of the intermediate layer 40c, the portion that covers the step S, the first covering portion 40c _2. The step S is a step between the lower portion 41 c that is the closest to the substrate 10 and the upper portion 41 d that is the farthest from the substrate 10 in the portion 41. The height of the step S and the height d _1.

The first covering portion 40 c ₂ covers at least the upper portion 41 d of the portion 41. First covering portion 40c ₂ of the present embodiment for example, the entire surface of the portion 41 covers the upper surface 40b ₁ of the base layer 40b in a predetermined range from the bottom 41c.

Further, the coating from the upper surface 40b ₁ of the base layer 40b exposed from the intermediate layer 40c, and the height to the upper surface 40c ₁ of the first covering portion 40c ₂ and the height _{d 2,} step S is the first covering portion 40c ₂ by being, who height d ₂ is lower than the height d _1. In other words, than the flatness of the surface formed by the portion 41 which projects to the upper surface 40b ₁ of the base layer 40b, an upper surface 40b ₁ which is exposed from the upper surface 40c ₁ and the intermediate layer 40c of the intermediate layer 40c (first covering portion 40c ₂₎ The flatness of the surface formed by becomes higher. That is, the intermediate layer 40c has a function of flattening the unevenness in the lower layer than the intermediate layer 40c. As a result of the formation of the intermediate layer 40c as described above, the film formed on the intermediate layer 40c is flattened and can be prevented from being broken due to a step or unevenness in the lower layer.

The intermediate layer 40c, in addition to covering the step S, for example, of the upper surface 40b ₁ of the base layer 40b, may be formed so as to cover the corner portion 42. The corners 42, shown with the upper surface 40b ₁ of the base layer 40b in the pixel P, and the boundary between the upper surface 40b ₁ of the base layer 40b on the pixel defining layer 14. When the intermediate layer 40c for covering the corner portion 42 and second cover portion 40c _3, second covering portion 40c _3, in the upper surface 40b _1, is formed along the inner periphery of the pixel defining layer 14.

In addition, it is preferable that the intermediate layer 40c formed in the plurality of pixels P is separated from each other between the adjacent pixels P. Specifically, for example, the upper surface 40b ₁ of the base layer 40b in the pixel P, the first or a cover portion 40c ₂ of the intermediate layer 40c, the second covering portion 40c ₃ of the or an intermediate layer 40c, and other island-like intermediate layer 40c are formed, and these are separated from other intermediate layers 40c formed in the adjacent pixels P.

Therefore, in the light emitting region, the contact angle α with respect to the upper surface 40b ₁ of the base layer of each intermediate layer 40c formed on the upper surface 40b _1, smaller than 90 °. In the present embodiment, the “light emitting region” refers to a region exposed from the pixel isolation film 14 in a region where the anode 32 and the organic layer 33 are in contact with each other. Furthermore, the contact angle α is smaller than the contact angle β of the pixel separation film 14 to the anode 32. As described above, when the contact angle α is smaller than the contact angle β, the step formed by the pixel barrier film 14 and the anode 32 in the second barrier film becomes gentle. In addition, the intermediate | middle layer 40c should just coat | cover the level | step difference S, and may be formed in any other location.

  The intermediate layer 40c is made of an insulator. As the material of the intermediate layer 40c, an organic material is preferable, and specifically, acrylic can be used. The material of the intermediate layer 40c is not limited to acrylic, and the affinity between the material and the material of the base layer 40b is higher than the affinity between the material of the intermediate layer 40c and the material of the second barrier layer 40d described later. If so, the material is not limited. When the intermediate layer 40c, the base layer 40b, and the second barrier layer 40d are made of a material that satisfies such conditions, the surface energy of the base layer 40b is smaller than the surface energy of the second barrier layer 40d.

The second barrier layer 40d has a function of preventing intrusion of oxygen and moisture into each layer closer to the substrate 10 than the second barrier layer 40d, such as the intermediate layer 40c. The second barrier layer 40d is made of SiN, it is formed so as to cover the upper surface 40c ₁ of the upper surface 40b ₁ and the intermediate layer 40c of the base layer 40b.

The upper surface of the sealing film 40 is covered with the counter substrate 50 via a filler 45, for example.
The counter substrate 50 is a glass substrate having an outer periphery smaller than that of the substrate 10 in plan view, for example, and is disposed so as to face the substrate 10. Specifically, for example, a color filter substrate can be used as the counter substrate 50.

The organic electroluminescent display device 1 of the present invention, the step S of the upper surface 40b ₁ of at least the base layer 40b of the upper surface 40b ₁ on the projecting portion 41 and the base layer 40b is covered by the first covering portion 40c _2. Therefore, compared with the organic electroluminescent display device not having the configuration, than the flatness of the surface formed by the portion 41 which projects to the upper surface 40b ₁ of the base layer 40b, an intermediate layer 40c (first covering portion 40c ₂₎ can upper surface 40c ₁ of the and the upper surface 40b ₁ which is exposed from the intermediate layer 40c is possible to enhance the flatness of the surface formed by the.

  In addition, since the intermediate layer 40c is locally formed, even when moisture permeates a part of the intermediate layer 40c, the diffusion of the moisture is locally caused by the formation of the intermediate layer 40c where moisture enters. Fits within the area. For this reason, compared with the organic electroluminescent display apparatus which does not have this structure, the spreading | diffusion of the water | moisture content through the intermediate | middle layer 40c is prevented. Therefore, it is possible to prevent an enlargement of a region where the intermediate layer 40c is peeled off. As a result, it is possible to increase the luminance and improve the reliability of the organic electroluminescence display device 1.

Further, since the second covering portion 40c ₃ of the intermediate layer 40c covers the corner portion 42, and the upper surface 40b ₁ of the base film 40b in the pixel P, the upper surface 40b ₁ of the base layer 40b on the pixel defining layer 14 The steps become gentle. For this reason, compared with the organic electroluminescent display apparatus which does not have this structure, the 2nd barrier layer 40d is coat | covered equally over the pixel P inside and outside. Thereby, the penetration | invasion of the water | moisture content to the intermediate | middle layer 40c can be prevented, and the reliability improvement of the organic electroluminescent display apparatus 1 can be implement | achieved.

  Further, since the intermediate layer 40c formed in the plurality of pixels P is separated from each other between the adjacent pixels P, even if moisture enters some of the intermediate layers 40c, it is adjacent to the entry portion. The moisture does not diffuse up to the pixel P to be used. For this reason, compared with the organic electroluminescent display apparatus which does not have this structure, it can prevent that a water | moisture content diffuses to the adjacent pixel P. FIG.

Further, the use of organic as the material of the intermediate layer 40c, by using a material having an affinity with organic as the material of the base layer 40b, than the flat portion of the top surface 40b ₁ of the base film 40b, the portion 41 and a lower and a step S between the upper surface 40b ₁ of Chimaku 40b, and corner portions 42 corresponding to the boundary between the anode 32 and the pixel defining layer 14, other, preferentially an intermediate layer 40c is formed from the portion has unevenness. For this reason, the intermediate layer 40c is locally formed in a stepped portion such as the step S, and the intermediate layer 40c is not formed in a flat portion in the pixel P or a flat portion on the pixel isolation film 14. The formation location can be controlled.

  Next, a method for manufacturing the organic electroluminescence display device 1 according to an embodiment of the present invention will be described with reference to the drawings. FIG. 6 is a schematic cross-sectional view corresponding to a VV cutting line for explaining a method of manufacturing an organic electroluminescence display device according to an embodiment of the present invention, and is a configuration before forming the sealing film 40.

  The manufacturing method of the organic electroluminescence display device 1 in the present embodiment includes a step of forming the circuit layer 12, the organic electroluminescence light emitting element 30, the sealing film 40, and the counter substrate 50 on the substrate 10.

  First, an insulating substrate 10 is prepared. Next, on the display region D of the substrate 10, for example, a polysilicon semiconductor layer 11a, a gate insulating layer 11b, a gate gate electrode 11c, a source / drain electrode 11d, a first insulating film 11e, and a second insulating film 11f are stacked. Thus, the thin film transistor 11 is formed. Next, a circuit layer 12 is formed by forming a passivation film 13 made of an insulating material so as to cover the thin film transistor 11.

  Next, a contact hole 32a connected to the thin film transistor 11 is formed in the passivation film 13 and the second insulating film 11f. Thereafter, a reflective film 31 made of a metal film is formed in a region corresponding to each pixel P on the passivation film 13.

  Next, a plurality of organic electroluminescence light emitting elements 30 are formed on the substrate 10 for each pixel P via the circuit layer 12. The step of forming the organic electroluminescence light emitting element 30 includes the step of forming the anode 32, the step of forming the organic layer 33 having at least the light emitting layer, and the step of forming the cathode 34.

  First, the anode 32 made of a material having translucency and conductivity, such as ITO (Indium Tin Oxide), for example, is formed by sputtering, for example, in a region corresponding to each pixel P on the passivation film 13 (on the reflection film 31). Form. Thus, the anode 32 is electrically connected to the thin film transistor 11 through the contact hole 32a. When the anode 32 is formed so as to be in contact with the upper surface of the reflective film 31 made of metal, the reflective film 31 becomes a part of the anode 32.

  Next, a pixel isolation film 14 made of a photosensitive insulating material is formed by a photolithography method in a partial region between adjacent pixels P. First, the pixel separation film 14 is formed so as to cover one surface of the display region D, and then the upper surface of the anode 32 of each pixel P is exposed so that the end of the anode 32 that is a pixel electrode is not exposed. Form an opening. Thereby, the bank-like pixel separation film 14 covering the outer periphery of the anode 32 is formed.

  Next, an organic layer 33 having a light emitting layer is formed on the anode 32. The organic layer 33 is formed, for example, by sequentially laminating a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer (not shown) in order from the anode 32 side. The method for forming the organic layer 33 may be a known method such as a vacuum deposition method, a nozzle printing method, a spin coating method, a slit coating method, an ink jet method, or a relief printing method.

  Next, the cathode 34 made of a light-transmitting and conductive material such as ITO is covered by the sputtering method, for example, so as to cover the organic layer 33 so as to cover the entire region of the display region D where the pixels P are arranged. To form. Thereby, the cathode 34 which contacts the organic layer 33 of the organic electroluminescent light emitting element 30 arrange | positioned in the some pixel P in common is formed.

  FIG. 7 is a schematic cross-sectional view corresponding to a line VV for explaining a method for manufacturing the organic electroluminescence display device 1 according to an embodiment of the present invention. In the present embodiment, a process of forming the sealing film 40 will be described by taking as an example a configuration in which the foreign matter 41a adheres to the upper surface 34a of the cathode 34 in the pixel P.

The step of forming the sealing film 40 includes a step of forming the first barrier layer 40a so as to cover the organic electroluminescence light emitting element 30 over the plurality of pixels P, and a base layer 40b of the upper surface 40a of the first barrier layer 40a. and a step of forming to cover _1, and a step of locally formed on the upper surface 40b ₁ of the intermediate layer 40c underlying layer 40b, a. Hereinafter, the process of forming the sealing film 40 in the region where the pixel P is arranged will be described along the flow of FIG. 9, but at the same time in the peripheral region 10 a ₁ where the organic electroluminescence light emitting element 30 is not formed. The sealing film 40 may be formed.

First, the first barrier layer 40a is formed by, for example, the plasma CVD method so as to cover the entire area of the display area D where the pixels P are arranged. The method of forming the first barrier layer 40a is not limited to the plasma CVD method, but includes sputtering, vapor deposition, sublimation, CVD (chemical vapor deposition), ECR-PECVD (electron cyclotron resonance-plasma enhanced chemical vapor deposition), and combinations thereof. Any method may be selected. The first barrier layer 40a is preferably formed using SiN as a material. By forming the SiN film as the first barrier layer 40a, a film denser than the SiO ₂ film can be formed. Therefore, it is possible to prevent moisture from entering from the outside rather than the barrier layer made of the SiO ₂ film.

Thereby, the upper surface 34a of the cathode 34 on the organic electroluminescence light emitting element 30 and the foreign matter 41a are covered with the first barrier layer 40a over the plurality of pixels P.
Among the first barrier layer 40a, a part covering the foreign matter 41a and the first barrier layer covering portion 40a _2.

  In addition, when the part which the foreign material 41a and the upper surface 34a of the cathode 34 contact is made into the contact surface 41b, when vapor-depositing the material of the 1st barrier layer 40a, vapor deposition of the material to the upper surface 34a around the contact surface 41b is a foreign material. It is blocked by 41a. For this reason, as shown in FIG. 7, the thickness of the 1st barrier layer 40a which covers the upper surface 34a around the contact surface 41b becomes thinner than the thickness of the 1st barrier layer 40a of the outer side.

Then, so as to cover the upper surface 40a ₁ of the first barrier layer 40a, for example, the base layer 40b made of amorphous silicon formed by the plasma CVD method. The method for forming the underlayer 40b is not limited to the plasma CVD method, and may be any method such as sputtering, vapor deposition, sublimation, CVD (chemical vapor deposition), ECR-PECVD (electron cyclotron resonance-plasma enhanced chemical vapor deposition), and combinations thereof. You may choose a method. The material of the underlayer 40b is not limited to amorphous silicon, and may be, for example, SiO ₂ or SiO, and may be other materials as long as it has lyophilicity with respect to the material of the intermediate layer 40c.

Thus, the top surface 40a ₁ of the first barrier layer 40a, a first barrier layer covering part 40a ₂ is covered with the base layer 40b. Then, the foreign matter 41a, the first barrier layer covering portion 40a _2, a base layer covering part 40b ₂ is a first part covering the barrier layer covering portion 40a ₂ of the base layer 40b, constituted by projecting portions 41 is formed.

At the time of depositing the material of the underlying layer 40b, the deposition of material onto the upper surface 40a ₁ of the surrounding contact surface 41b is blocked by foreign matter 41a and the first barrier layer covering portion 40a _2. For this reason, the thickness of the base layer 40b around the contact surface 41b is thinner than the thickness of the base layer 40b outside.

The portion 41 that protrudes is not limited to the above configuration, resulting in the production step of the first barrier layer 40a and the base layer 40b, of the irregularities on the upper surface 40b ₁ of the base layer 40b, the margin of error due to the manufacturing process What is necessary is just a convex part which has the height exceeding. For example, the convex part by the bubble produced | generated by the manufacturing process, and the convex part produced by the foreign materials 41a, such as dust adhering on the 1st barrier layer 40a and the base layer 40b, are mentioned.

FIG. 8 is a schematic cross-sectional view corresponding to a VV cut line for explaining a method of manufacturing the organic electroluminescence display device 1 according to an embodiment of the present invention. Then, the upper surface 40b ₁ of the base layer 40b, locally forming an intermediate layer 40c made of an insulator. In the step of forming the intermediate layer 40c, the intermediate layer 40c is not covered over the entire surface of the base layer 40b, and the film formation is stopped when the intermediate layer 40c is formed at the step S or the corner 42.

  The material of the intermediate layer 40c is preferably an organic material, and specifically, it is particularly preferable to use acrylic. The material of the intermediate layer 40c is not limited to acrylic, and the affinity between the material and the material of the base layer 40b is higher than the affinity between the material of the intermediate layer 40c and the material of the second barrier layer 40d described later. If so, the type is not limited. Further, this material is desirably a material that preferentially adheres to the step S or the corner 42 when the intermediate layer 40c is formed.

By forming the intermediate layer 40c made of such a material satisfying the conditions, the intermediate layer 40c is, at least, are formed so as to cover the step S of the upper surface 40b ₁ of the part 41 and the base layer 40b. Of the intermediate layer 40c, the portion that covers the step S, the first covering portion 40c _2.

By forming the intermediate layer 40c, of the portion 41, at least the upper 41d is covered by the first covering portion 40c _2. First covering portion 40c ₂ of the present embodiment, for example, covers the entire surface of the portion 41, the upper surface 40b ₁ of the base layer 40b around the portion 41.

The coating from the upper surface 40b ₁ of the base layer 40b exposed from the intermediate layer 40c, and the height to the upper surface 40c ₁ of the first covering portion 40c ₂ and the height _{d 2,} the step S by the first covering portion 40c ₂ doing, towards the height d ₂ is lower than the height d _1. In other words, than the surface formed by the portion 41 which projects to the upper surface 40b ₁ of the base layer 40b, the surface that forms between the upper surface 40b ₁ which is exposed from the upper surface 40c ₁ and the intermediate layer 40c of the intermediate layer 40c (first covering portion 40c ₂₎ Becomes flatter.

The intermediate layer 40c, in addition to covering the step S, for example, of the upper surface 40b ₁ of the base layer 40b, may be formed so as to cover the corner portion 42. The corners 42, shown with the upper surface 40b ₁ of the base layer 40b in the pixel P, and the boundary between the upper surface 40b ₁ of the base layer 40b on the pixel defining layer 14. When the intermediate layer 40c for covering the corner portion 42 and second cover portion 40c _3, second covering portion 40c _3, in the upper surface 40b _1, is formed along the inner periphery of the opening of the pixel defining layer 14.

Thus, the portion 41 which protrudes, by coating with the second covering portion 40c ₃ of the intermediate layer 40c, than the surface formed by the portion 41 which projects to the upper surface 40b ₁ of the base layer 40b, the intermediate layer 40c upper surface towards the surface which forms between the upper surface 40b ₁ which is exposed from 40c ₁ and the intermediate layer 40c is flat.

The intermediate layer 40c is preferably separated from each other between adjacent pixels P. Specifically, for example, the first covering portion 40c ₂ , the second covering portion 40c ₃ , and the island-like intermediate layer 40c are formed on the upper surface 40b ₁ of the base layer 40b in the pixel P, and these are adjacent to each other. It is separated from the other intermediate layer 40 c formed in the pixel P to be.

Further, the contact angle α with respect to the upper surface 40b ₁ of each of the intermediate layer 40c formed on the upper surface 40b _1, smaller than 90 °. The intermediate layer 40c only needs to cover at least the step S, and may be formed at any other location.

Then, so as to cover the upper surface 40c ₁ of the upper surface 40b ₁ and the intermediate layer 40c of the base layer 40b, a second barrier layer 40d, for example, is formed by a plasma CVD method. The method for forming the second barrier layer 40d is not limited to the plasma CVD method, and any method may be selected. The second barrier layer 40d is also preferably formed of SiN, like the first barrier layer 40a. The SiN film can be formed into a denser film than the SiO ₂ film and can prevent moisture from entering from the outside. Thus, the sealing film 40 is formed.

Thus, by forming the sealing film 40 in the peripheral region 10a _1, it is possible to protect the wiring (not shown) formed in the peripheral region 10a _1. When the sealing film 40 is formed on the entire surface of the substrate 10, after the sealing film 40 is formed, the sealing film 40 on the connection terminal with the driver 3 and the connection terminal with the flexible circuit board 2 is removed. Thus, the connection terminal can be formed in the region where the sealing film 40 has been removed.

Next, by disposing the counter substrate 50 on the sealing film 40 with the filler 45 interposed therebetween, the organic electroluminescence display device 1 shown in FIG. 5 is formed. In the present embodiment has described the configuration in which portions 41 protruding on the upper surface 40b ₁ of the base layer 40b in the pixel P is formed as an example, would otherwise, the portion 41 which protrudes in the pixel P by the foreign matter It is desirable that it is not. When no foreign matter is attached, the intermediate layer 40c is formed along the corner portion 42 in the region within the pixel P as shown in FIG.

Method of manufacturing the organic electroluminescent display device 1 of the present invention, by forming the intermediate layer 40c on the base layer 40b, and the upper surface 40b ₁ of the part 41 and the base layer 40b protruding to the upper surface 40b ₁ of the base layer 40b step S is covered by the first covering portion 40c _2.
Therefore, compared with the method of manufacturing the organic electroluminescent display device not having the configuration, than the flatness of the surface formed by the portion 41 which projects to the upper surface 40b ₁ of the base layer 40b, an intermediate layer 40c (first covering portion 40c ₂₎ may be the upper surface 40b ₁ which is exposed from the upper surface 40c ₁ and the intermediate layer 40c of increasing the flatness of the surface formed by the.

  Further, by forming the intermediate layer 40c locally, even if moisture permeates a part of the intermediate layer 40c, the diffusion of the moisture is a local region where the intermediate layer 40c is formed where moisture enters. Fits within. For this reason, compared with the manufacturing method of the organic electroluminescent display apparatus which does not have this structure, the organic electroluminescent display apparatus 1 which can prevent the spreading | diffusion of moisture to the intermediate | middle layer 40c, and peeling can be manufactured. As a result, it is possible to increase the luminance and improve the reliability of the organic electroluminescence display device 1. In addition, the yield of the organic electroluminescence display device 1 can be improved.

Further, by forming along the second covering portion 40c ₃ of the intermediate layer 40c at a corner 42, than the angle β formed by the inclination of the upper surface of the first barrier layer 40a in the inclined surface of the pixel defining layer 14, the pixel It becomes gentler than the angle α formed by the inclination of the upper surface of the second barrier layer 40d in the inclined surface of the separation membrane 14. For this reason, compared with the manufacturing method of the organic electroluminescent display device which does not have this structure, the 2nd barrier layer 40d is coat | covered equally over the inside and outside of the pixel P, and the tearing of the 2nd barrier layer 40d by a level | step difference can be prevented. Thereby, the invasion of moisture into the intermediate layer 40c can be prevented, and the organic electroluminescence display device 1 capable of realizing improvement in reliability can be formed.

  Further, by forming the intermediate layer 40c so as to be separated from each other between the adjacent pixels P, it is possible to prevent moisture that has entered a part of the intermediate layer 40c from diffusing to the pixels P adjacent to the intrusion portion. It is. For this reason, compared with the manufacturing method of the organic electroluminescent display apparatus which does not have this structure, the organic electroluminescent display apparatus 1 which can prevent a water | moisture content from diffusing to the adjacent pixel P can be manufactured.

  In addition, by forming the intermediate layer 40c made of an organic material, the affinity of the material of the base layer 40b and the intermediate layer 40c is increased as compared with the manufacturing method of the organic electroluminescence display device not having this configuration. For this reason, it is not necessary to form the intermediate layer 40c on the entire surface of the intermediate layer 40b. For this reason, it becomes easy to form the intermediate | middle layer 40c locally, and it can prevent the spreading | diffusion of a water | moisture content more.

  FIG. 10 is a plan view of a pixel P of the organic electroluminescence display device 1 which is a display device according to an embodiment of the present invention, and FIG. 11 is a schematic cross-sectional view corresponding to the line VI-VI in FIG. In FIG. 11, only the structure from the passivation film 13 to the sealing film 40 is shown for convenience of explanation.

  10 and 11, the thin film transistor 11, the pixel electrode (anode) 32 controlled by the thin film transistor 11, the organic layer 33 disposed on the anode 32, and the counter electrode (cathode) disposed on the organic layer 33. 34 is the same as the configuration described with reference to FIG. 3 above in that it is a display device in which a pixel including the pixel 34 is formed on a substrate.

  The pixel P formed for each pixel electrode 32 is covered with a common sealing film 40. The sealing film 40 on the pixel P includes a first region PA1, which is a region where the first barrier layer 40a, the base layer 40b, and the second barrier layer 40d are stacked, and an intermediate layer between the first barrier layer 40a and the base layer 40b. It has 2nd area | region AP2 which is the area | region where the layer 40c and the 2nd barrier layer 40d were laminated | stacked.

  The first area PA1 overlaps the light emitting area of the pixel P. In the first region PA1, since the second barrier layer 40d is directly laminated on the base layer 40b, the second barrier layer 40d is strongly bonded to the base layer 40b as compared with a display device not having this configuration. For this reason, peeling of the second barrier layer 40d from the base layer 40b can be prevented. Note that the second region PA2 is located from a part of the light emitting region of the pixel P to a region overlapping the pixel isolation film 14 that is an insulating film.

  As shown in FIG. 10, the first area PA1 is surrounded by the second area PA2 in plan view, and the center of the light emitting area (the area of the organic layer 33 sandwiched so as to be in contact with the anode 32 and the cathode 34). The intermediate layer 40c is not formed on the part. For this reason, the area | region in which the intermediate | middle layer 40c is formed in a light emission area | region becomes fewer compared with the conventional organic electroluminescent display apparatus in which the intermediate | middle layer 40c is formed in the whole light emission area | region. Thereby, attenuation | damping of the light radiate | emitted from the organic layer 33 can be suppressed, and the improvement of the brightness | luminance of the organic electroluminescent display apparatus 1 is realizable.

  According to the present invention, the intermediate layer 40c is locally formed by providing the base layer 40b having an affinity for the intermediate layer 40c on the first barrier layer 40a. For this reason, since the intermediate layer 40c is preferentially formed in the step S and the corner portion 42 over the flat region, the intermediate layer 40c can be selectively formed only in the step S and the corner portion 42.

  According to the organic electroluminescence display device 1 of the present embodiment, the adhesiveness and sealing performance of the sealing film 40 are better than those of the organic electroluminescence display device not having this configuration. For this reason, peeling of the sealing film 40 can be suppressed, and furthermore, the organic electroluminescence display device 1 with excellent image visibility and light extraction efficiency can be provided.

  Hereinafter, the organic electroluminescence display device 1 and the manufacturing method thereof according to the present invention will be described in more detail with reference to examples. However, the present invention is not limited only to these examples.

Example 1
First, the circuit layer 12 was formed on the insulating substrate 10. Next, an anode 32, a pixel separation film 14, an organic layer 33 having at least a light emitting layer, and a cathode 34 were formed. Thereby, as shown in FIG. 6, the organic electroluminescence light emitting element 30 was formed for each pixel P.

Next, a first barrier layer 40a made of SiN having a thickness of 500 nm is formed on the organic electroluminescent light emitting element 30 as shown in FIG. 7 by plasma CVD using SiH ₄ , NH ₃ , and N ₂ as materials ( Formed on the cathode 34). The substrate temperature in forming the first barrier layer 40a was 100 ° C. or less.

Then, by plasma CVD using SiH ₄ gas as a material, the base layer 40b made of 2nm thickness of the amorphous silicon was formed to cover the top surface 40a ₁ of the first barrier layer 40a. The substrate temperature in forming the underlayer 40b was set to 100 ° C. or lower.

It was then coated with acrylic on the top surface 40b ₁ of the base layer 40b. As a result, the acrylic was locally covered only on the locally projecting portions 41 and corners 42. Thereafter, acrylic was polymerized by UV irradiation to form an intermediate layer 40c shown in FIG.

_Then, SiH _4, NH 3, _{N 2} by a plasma CVD method using a gas as a material, a second barrier layer 40d made of 500nm thickness of the SiN of the upper surface 40c of the upper surface 40b ₁ and the intermediate layer 40c of the base layer 40b ₁ was formed. The substrate temperature in forming the second barrier layer 40d was 100 ° C. or lower. Thus, the sealing film 40 was formed.

  Next, the counter substrate 50 coated with the 6 μm-thick sealing material BM and the filler 45 was bonded onto the sealing film 40, whereby the organic electroluminescence display device 1 shown in FIG. 5 was formed.

  When the organic electroluminescence display device 1 obtained according to this example was exposed to an atmosphere having a temperature of 85 ° C. and a humidity of 85%, a non-light-emitting portion in the light-emitting region due to intrusion of moisture into the sealing film 40 No trace of (dark spot) or film floating of the sealing film 40 was observed. Thereby, it was confirmed that the water | moisture-content diffusion from the penetration | invasion location of the water | moisture content to the sealing film 40 was suppressed.

(Comparative Example 1)
Without forming the undercoat layer 40b, an intermediate layer 40c, and formed so as to cover the upper surface 40a ₁ of the first barrier layer 40a. Thus the intermediate layer 40c, of the top surface 40a _1, which is formed so as to cover the entire region which is arranged in the pixel P. Thereafter, an organic electroluminescence display device was formed in the same manner as in Example 1.

  When the organic electroluminescence display device 1 obtained according to this example was exposed to an atmosphere having a temperature of 85 ° C. and a humidity of 85%, a non-light-emitting portion in the light-emitting region due to intrusion of moisture into the sealing film 40 Traces of enlarged (dark spots) and film floating of the sealing film 40 were observed. Thereby, it was confirmed that the water | moisture-content diffusion from the penetration | invasion location of the water | moisture content to the sealing film 40 produced.

DESCRIPTION OF SYMBOLS 1 Organic electroluminescence display device, 2 Flexible circuit board, 3 Drive driver, 10 Substrate, 11 Thin film transistor, 12 Circuit layer, 13 Passivation film, 14 Pixel separation film, 30 Organic electroluminescence light emitting element, 32 Anode, 32a Contact hole, 33 Organic layer, 34 cathode, 40 sealing film, 40a first barrier layer, 40a ₁ upper surface, 40a ₂ first barrier layer covering portion, 40b underlying layer, 40b ₁ upper surface, 40b ₂ underlying layer covering portion, 40c intermediate layer, 40c ₁ upper surface, 40c ₂ first covering portion, 40c ₃ second covering portion, 40d second barrier layer, 41 portion, 41a foreign matter, 41b contact surface, 41c, 41d portion, 42 corner portion, 45 filler, 50 counter substrate, D display region, _d 1, _{d 2} height, P pixel, S step, contacting α .

Claims (18)

A substrate,
A plurality of organic electroluminescent light emitting elements disposed on the substrate;
An insulating film disposed on the substrate;
A sealing film covering the plurality of organic electroluminescence light-emitting elements and the insulating film;
A flexible circuit board disposed on the substrate;
Have
Each of the plurality of organic electroluminescent light emitting elements has an anode, an organic light emitting layer on the anode, and a cathode on the organic light emitting layer,
The insulating film has an opening that exposes a part of the upper surface of the anode, covers an outer peripheral end of the anode,
The sealing film includes a first barrier layer having a silicon nitride film or a silicon oxynitride film, and a base layer having a silicon oxide film covering the upper surface of the first barrier layer and having a thickness smaller than that of the first barrier layer When the organic layer covering the surface of the underlying layer, the organic layer and the organic electroluminescent display device that perforated and a second barrier layer having a silicon oxynitride film or a silicon nitride film covers the underlying layer.   The organic electroluminescence display device according to claim 1, wherein the organic layer has higher affinity for the base layer than affinity for the first barrier layer.   The organic electroluminescence display device according to claim 1, wherein a contact angle of the insulating film with respect to the anode is larger than a contact angle of the organic layer with respect to the base layer.   The organic electroluminescence display device according to claim 1, wherein the organic electroluminescence light emitting element emits light in a direction away from the substrate.   The organic electroluminescence display device according to claim 1, further comprising a thin film transistor connected to the anode between the anode and the substrate.   The organic electroluminescence display device according to claim 5, wherein the thin film transistor overlaps both the opening and the end of the insulating film in a plan view. A substrate,
A plurality of pixels disposed on the substrate;
A sealing film covering the plurality of pixels;
A flexible circuit board disposed on the substrate;
Have
Each of the plurality of pixels includes an organic electroluminescence light emitting element and a thin film transistor connected to the organic electroluminescence light emitting element,
The sealing film has a first barrier layer, and a thin underlying layer thickness covering the top surface of the first barrier layer than the first barrier layer, the undercoat layer by covering the surface of the underlying layer An organic layer covering the step, and a second barrier layer covering the organic layer and the base layer,
The first barrier layer and the second barrier layer each have a silicon nitride film or a silicon oxynitride film,
The underlayer has a silicon oxide film,
A plurality of first regions in which the first barrier layer, the base layer, and the second barrier layer are stacked and the organic layer is not disposed, the first barrier layer, the base layer, the organic layer, and the second barrier layer And a plurality of second regions laminated on the substrate,
In cross-sectional view, one second region is sandwiched between two first regions,
An organic electroluminescence display device in which one first region is sandwiched between two second regions in a cross-sectional view. The organic electroluminescence display device according to claim 7 , wherein the organic electroluminescence light emitting element emits light in a direction away from the substrate. A first substrate;
A plurality of organic electroluminescent light emitting elements disposed on the first substrate;
An insulating film disposed on the first substrate;
A sealing film covering the plurality of organic electroluminescence light-emitting elements and the insulating film;
A filler disposed on the sealing film and thicker than the sealing film;
A second substrate on the filler;
Have
Each of the plurality of organic electroluminescent light emitting elements has an anode, an organic light emitting layer on the anode, and a cathode on the organic light emitting layer,
The insulating film has an opening that exposes a part of the upper surface of the anode, covers an outer peripheral end of the anode,
The sealing film has a first barrier layer, and a thin underlying layer thickness covering the top surface of the first barrier layer than the first barrier layer, and an organic layer covering the surface of the underlying layer, the organic A second barrier layer covering the layer and the base layer and having a thickness greater than that of the base layer,
The first barrier layer and the second barrier layer each have a silicon nitride film or a silicon oxynitride film,
The underlayer has a silicon oxide film,
The first barrier layer, the base layer, and the second barrier layer are stacked, and the first region where the organic layer is not disposed, the first barrier layer, the base layer, the organic layer, and the second barrier layer are stacked. An organic electroluminescent display device, wherein the second region is on the first substrate. The organic electroluminescence display device according to claim 9 , wherein a contact angle of the insulating film with respect to the anode is larger than a contact angle of the organic layer with respect to the base layer. The organic electroluminescence display device according to claim 9 , wherein the organic electroluminescence light emitting element emits light in a direction away from the first substrate. The organic electroluminescence display device according to claim 9 , further comprising a thin film transistor connected to the anode between the first substrate and the anode. The organic electroluminescence display device according to claim 12 , wherein the thin film transistor overlaps both the opening and the end of the insulating film in a plan view. In cross-sectional view, each of the first region and the second region is disposed on the first substrate,
10. The organic electroluminescence according to claim 9 , wherein one second region is sandwiched between two first regions in a cross-sectional view, and one first region is sandwiched between two second regions in a cross-sectional view. Display device. The organic electroluminescence display device according to claim 9 , wherein the organic layer has higher affinity for the base layer than affinity for the first barrier layer. The anode, a reflective electrode, an organic electroluminescent display device according to claim 1 or claim 9 and a transparent electrode on said reflective electrode. The first barrier layer, the base layer, and the second barrier layer are stacked, and the first region where the organic layer is not disposed, the first barrier layer, the base layer, the organic layer, and the second barrier layer are stacked. The organic electroluminescence display device according to claim 1, wherein the second region formed is on the substrate. In a cross-sectional view, each of the first region and the second region is disposed on the substrate,
The organic electroluminescence according to claim 17, wherein one second region is sandwiched between two first regions in a cross-sectional view, and one first region is sandwiched between two second regions in a cross-sectional view. Display device.

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