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JP6464072B2 - Substrate holding device - Google Patents
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JP6464072B2 - Substrate holding device - Google Patents

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JP6464072B2
JP6464072B2 JP2015202457A JP2015202457A JP6464072B2 JP 6464072 B2 JP6464072 B2 JP 6464072B2 JP 2015202457 A JP2015202457 A JP 2015202457A JP 2015202457 A JP2015202457 A JP 2015202457A JP 6464072 B2 JP6464072 B2 JP 6464072B2
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base
conductor
hole
substrate
substrate holding
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JP2017076675A (en
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武一 高橋
武一 高橋
篤 菅家
篤 菅家
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Niterra Co Ltd
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NGK Spark Plug Co Ltd
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Description

本発明は、導電体が埋設されている基体の表面に基板が保持または載置される装置に関する。   The present invention relates to an apparatus in which a substrate is held or placed on the surface of a base body in which a conductor is embedded.

静電チャックの基体に埋設されている静電チャック電極に対して電圧を印加するため、次のような構成の接続端子が提案されている(特許文献1参照)。すなわち、基体において基板が吸着される吸着側とは反対側に静電チャック電極と接続するための凹部が形成されている。略円筒状の接続端子が凹部に嵌入され、その一端面が静電チャック電極に対してロウ付けされている。接続端子の内側面には雌ネジが形成されており、これに対して外部電源に接続されている取り付け金具に形成されている雄ネジが螺着される。   In order to apply a voltage to the electrostatic chuck electrode embedded in the base of the electrostatic chuck, a connection terminal having the following configuration has been proposed (see Patent Document 1). That is, a recess for connecting to the electrostatic chuck electrode is formed on the opposite side of the substrate to the suction side where the substrate is sucked. A substantially cylindrical connection terminal is fitted into the recess, and one end face thereof is brazed to the electrostatic chuck electrode. A female screw is formed on the inner side surface of the connection terminal, and a male screw formed on a mounting bracket connected to an external power source is screwed to the female screw.

特開平10−189696号公報JP-A-10-189696

しかし、基体の薄型化を図るため、単に略円筒状の接続端子が軸線方向に短縮されると、相手方の略円柱状の接続端子とのネジの噛み合い長さも短縮され、両接続端子の接続不良等が生じる可能性がある。   However, if the approximately cylindrical connection terminal is simply shortened in the axial direction in order to reduce the thickness of the base, the screw engagement length with the other substantially cylindrical connection terminal is also shortened, resulting in poor connection between both connection terminals. Etc. may occur.

そこで、本発明は、基体の薄型化を図りながらも、外部電源に接続されている給電端子に対する受電端子の接続状態の安定性向上を図りうる基板保持装置を提供することを目的とする。   Accordingly, an object of the present invention is to provide a substrate holding device capable of improving the stability of the connection state of a power receiving terminal with respect to a power feeding terminal connected to an external power source while reducing the thickness of the base.

本発明の基板保持装置は、一端面に基板が保持または載置される平板状の基体と、前記基体に埋設されている導電体と、前記導電体に電気的に接続される受電端子と、を備えている基板保持装置であって、前記基体の他端面に前記導電体の一部を露出させるように窪んでいる凹部が形成され、前記凹部から離間した箇所で前記基体を貫通する貫通孔が形成され、前記受電端子が、前記基体の前記凹部に嵌入されて前記導電体に対して接合される第1要素と、前記基体の前記貫通孔の途中まで嵌入される筒状の第2要素と、前記第1要素および前記第2要素を連続させる中間要素と、を備えていることを特徴とする。   The substrate holding device of the present invention includes a flat base on which a substrate is held or placed on one end surface, a conductor embedded in the base, a power receiving terminal electrically connected to the conductor, And a through hole penetrating through the base at a location spaced from the concave portion, wherein a concave portion is formed on the other end surface of the base to expose a part of the conductor. A first element that is inserted into the recess of the base and joined to the conductor, and a cylindrical second element that is inserted halfway through the through hole of the base. And an intermediate element that connects the first element and the second element.

本発明の基板保持装置によれば、外周面に雄ネジが形成されている略円柱状の部材(たとえばボルト)に、基体の一端面側(吸着面側)から貫通孔および筒状の第2要素の中空部を貫通させることができる。さらに、当該部材に基体の他端面側に接合される基台に形成された貫通孔を貫通させたうえで、内周面に雌ネジが形成されている略筒状の部材(たとえばナット)または当該基台に形成されている雌ネジに当該雄ネジを螺着させることができる。これにより、第1要素の導電体に接合している受電端子と、略円柱状の部材により構成されている給電端子との接続状態が安定に維持される。   According to the substrate holding device of the present invention, the substantially cylindrical member (for example, a bolt) having an external thread formed on the outer peripheral surface thereof, the through hole and the cylindrical second member from the one end surface side (attraction surface side) of the base. The hollow part of the element can be penetrated. Further, a substantially cylindrical member (for example, a nut) having a female screw formed on the inner peripheral surface after passing through a through-hole formed in a base joined to the other end surface side of the base member. The male screw can be screwed onto the female screw formed on the base. Thereby, the connection state of the power receiving terminal joined to the conductor of the first element and the power feeding terminal constituted by the substantially columnar member is stably maintained.

この状態で、外部電源に接続されている給電端子およびこれに接続されている受電端子を通じて、この基体に埋設されている導電体に対して電圧が印加される。導電体が静電チャック電極を構成する場合、当該導電体への電圧印加によって基体の一端面側に載置されているウエハなどの基板がクーロン力などによって基体に吸着保持される。導電体が抵抗発熱体を構成する場合、当該導電体への電圧印加によって基板の温度の場所によらない均一化が図られる。導電体が高周波電圧印加用電極(または接地用電極)を構成する場合、当該導電体およびこれと対をなす、基体1に埋設されているまたは基体1の外側に配置されている接地用電極(また高周波電圧印加用電極)の間に高周波電圧が印加されることによって基板の周囲にハロゲンガス等のプラズマが生成される。   In this state, a voltage is applied to the conductor embedded in the base body through the power supply terminal connected to the external power source and the power receiving terminal connected to the power supply terminal. When the conductor constitutes an electrostatic chuck electrode, a substrate such as a wafer placed on one end surface side of the substrate is attracted and held on the substrate by a Coulomb force or the like by applying a voltage to the conductor. In the case where the conductor constitutes a resistance heating element, the voltage is applied to the conductor to make the substrate temperature uniform regardless of the location of the substrate. When the conductor constitutes a high-frequency voltage application electrode (or grounding electrode), the grounding electrode (which is embedded in the substrate 1 or arranged outside the substrate 1 and is paired with the conductor and the grounding electrode) Further, when a high frequency voltage is applied between the high frequency voltage application electrodes), plasma such as halogen gas is generated around the substrate.

基体の他端面に形成されている凹部および貫通孔のそれぞれに嵌入される第1要素および第2要素のそれぞれが中間要素を介して連続しながら相互に離間している。このため、第1要素および第2要素が軸線方向に重なるように配置されている構成の受電端子と比較して、本発明の基板保持装置を構成する受電端子の薄型化、ひいては基体の薄型化が図られる。   Each of the first element and the second element inserted into each of the recess and the through-hole formed in the other end surface of the base is spaced apart from each other while continuing through the intermediate element. For this reason, compared with the power receiving terminal of the structure arrange | positioned so that a 1st element and a 2nd element may overlap in an axial direction, thickness reduction of the power receiving terminal which comprises the board | substrate holding | maintenance apparatus of this invention and by extension, thickness reduction of a base | substrate Is planned.

本発明の一態様の基板保持装置において、前記基体の前記他端面に前記凹部および前記貫通孔を連続させるように窪み、前記受電端子の前記中間要素が嵌入される溝部が形成されている。   In the substrate holding device according to one aspect of the present invention, a recess is formed in the other end surface of the base so as to allow the recess and the through hole to be continuous, and a groove into which the intermediate element of the power receiving terminal is inserted is formed.

当該構成の基板保持装置によれば、基体の他端面から受電端子の中間要素の突出量を低減または解消することができる。基体の他端面から受電端子の中間要素が突出していない場合、当該突出を受容するための凹部が基台に形成される必要がなくなる。   According to the substrate holding device of the said structure, the protrusion amount of the intermediate element of a receiving terminal can be reduced or eliminated from the other end surface of a base | substrate. When the intermediate element of the power receiving terminal does not protrude from the other end surface of the base, it is not necessary to form a recess for receiving the protrusion on the base.

本発明の一態様の基板保持装置において、前記基体の前記溝部が前記凹部よりも前記他端面から浅く窪むように形成されていることが好ましい。   In the substrate holding device according to one aspect of the present invention, it is preferable that the groove portion of the base body is formed so as to be shallower from the other end surface than the concave portion.

当該構成の基板保持装置によれば、基体の厚さ方向に対して垂直な方向について受電端子に外力が作用しても、第1要素が凹部と溝部との段差部分に当接するので、当該外力に対する受電端子の位置安定性、ひいては第1要素と導電体との接合安定性のさらなる向上が図られる。   According to the substrate holding device of the configuration, even if an external force is applied to the power receiving terminal in a direction perpendicular to the thickness direction of the base body, the first element contacts the step portion between the recess and the groove. This further improves the positional stability of the power receiving terminal with respect to, and hence the joining stability between the first element and the conductor.

本発明の一態様の基板保持装置において、前記基体において前記貫通孔に前記第2要素が嵌入されるザグリ部が形成されていることが好ましい。   In the substrate holding device according to one aspect of the present invention, it is preferable that a counterbore portion in which the second element is inserted into the through hole is formed in the base body.

当該構成の基板保持装置によれば、基体の厚さ方向について第2要素および受電端子全体の位置のさらなる安定化が図られ、ひいては第1要素と導電体との接合安定性のさらなる向上が図られる。   According to the substrate holding device having such a configuration, the positions of the second element and the entire power receiving terminal can be further stabilized in the thickness direction of the base body, and further, the joint stability between the first element and the conductor can be further improved. It is done.

本発明の一実施形態としての基板保持装置の上面図。The top view of the substrate holding device as one embodiment of the present invention. 本発明の一実施形態としての基板保持装置の下面図。The bottom view of the substrate holding device as one embodiment of the present invention. 図1のIIIA−IIIA線断面図。IIIA-IIIA sectional view taken on the line of FIG. 図1のIIIB−IIIB線断面図。IIIB-IIIB sectional view taken on the line of FIG. 図3Aに対応する基台に対する基体の取り付け態様に関する説明図。Explanatory drawing regarding the attachment aspect of the base | substrate with respect to the base corresponding to FIG. 3A. 図3Bに対応する基台に対する基体の取り付け態様に関する説明図。Explanatory drawing regarding the attachment aspect of the base | substrate with respect to the base corresponding to FIG. 3B.

(構成)
図1〜図4に示されている本発明の一実施形態としての基板保持装置は、基体1と、第1導電体21と、第2導電体22と、第1受電端子41と、第2受電端子42と、を備えている静電チャックとして構成されている。
(Constitution)
The substrate holding device as one embodiment of the present invention shown in FIGS. 1 to 4 includes a base 1, a first conductor 21, a second conductor 22, a first power receiving terminal 41, and a second power receiving terminal 41. An electrostatic chuck including a power receiving terminal 42.

基体1は、セラミックス焼結体などの絶縁性誘電体からなり、一端面(図3Aの上面)をウエハなどの基板(図示略)が吸着保持される吸着面とする平板状に形成されている。本実施形態における基体1は略円板状であるが、多角形板状または楕円板状などのさまざまな形状であってもよい。   The substrate 1 is made of an insulating dielectric such as a ceramic sintered body, and is formed in a flat plate shape having one end surface (the upper surface in FIG. 3A) as an adsorption surface on which a substrate (not shown) such as a wafer is adsorbed and held. . The substrate 1 in the present embodiment has a substantially disc shape, but may have various shapes such as a polygonal plate shape or an elliptical plate shape.

基体1の吸着面には、当該吸着面から突出する略円柱状、略半球状または略円錐台状の複数のピン10が、三角格子状に配置されるように形成されている。なお、ピン10の配置態様は正方格子状または同心円状など変更されてもよく、ピン10が部分的にまたは全体的に省略されてもよい。   A plurality of substantially cylindrical, substantially hemispherical, or substantially frustoconical pins 10 protruding from the adsorption surface are formed on the adsorption surface of the base 1 so as to be arranged in a triangular lattice shape. In addition, the arrangement | positioning aspect of the pin 10 may be changed, such as tetragonal lattice shape or concentric circle shape, and the pin 10 may be partially or entirely abbreviate | omitted.

基体1の吸着面とは反対側の他端面(図2の下面)に第1導電体21の一部を(第1受電端子41が存在しない状態で)露出させるように窪んでいる略円柱状の第1凹部111が形成され、第1凹部111から離間した箇所で基体1を貫通する断面円形状の第1貫通孔11が形成されている(図3A参照)。本実施形態では、基体1の中心から第2指定距離だけ離間し、かつ、基体1の周方向に約90°だけ相互に離間している2つの箇所に2組の第1凹部111および第1貫通孔11が形成されている。本実施形態では第1貫通孔11が第1凹部111から基体1の径方向外側に離間しているが、離間方向は基体1の径方向内側または周方向など異なる方向であってもよい。   A substantially cylindrical shape that is recessed to expose a part of the first conductor 21 (in the absence of the first power receiving terminal 41) on the other end surface (the lower surface in FIG. 2) opposite to the adsorption surface of the substrate 1. The first concave portion 111 is formed, and a first through hole 11 having a circular cross section penetrating the base body 1 is formed at a location away from the first concave portion 111 (see FIG. 3A). In the present embodiment, two sets of the first recesses 111 and the first recesses are provided at two locations that are separated from the center of the base 1 by a second specified distance and that are spaced apart from each other by about 90 ° in the circumferential direction of the base 1. A through hole 11 is formed. In the present embodiment, the first through hole 11 is separated from the first recess 111 to the outside in the radial direction of the base body 1, but the separation direction may be a different direction such as a radial inside or a circumferential direction of the base body 1.

基体1の他端面に第1凹部111および第1貫通孔11を連続させるように窪んでいる第1溝部110が形成されている(図3A参照)。すなわち、第1溝部110は、第1貫通孔11および第1凹部111の離間方向に延在している。第1溝部110が第1凹部111よりも他端面から浅く窪むように形成されている。第1貫通孔11には、下部を上部よりも拡径させるように第1ザグリ部112が形成されている(図3A参照)。   A first groove portion 110 is formed in the other end surface of the base body 1 so as to be continuous with the first concave portion 111 and the first through hole 11 (see FIG. 3A). In other words, the first groove 110 extends in the direction in which the first through hole 11 and the first recess 111 are separated. The first groove 110 is formed so as to be shallower than the first recess 111 from the other end surface. A first counterbore portion 112 is formed in the first through hole 11 so that the diameter of the lower portion is larger than that of the upper portion (see FIG. 3A).

同様に、基体1の吸着面とは反対側の他端面に第2導電体22の一部を(第2受電端子42が存在しない状態で)露出させるように窪んでいる略円柱状の第2凹部121が形成され、第2凹部121から離間した箇所で基体1を貫通する断面円形状の第2貫通孔12が形成されている(図3B参照)。本実施形態では、基体1の中心から第2指定距離だけ離間し、かつ、基体1の周方向に約180°だけ相互に離間している2つの箇所に2組の第2凹部121および第2貫通孔12が形成されている。本実施形態では第2貫通孔12が第2凹部121から基体1の径方向外側に離間しているが、離間方向は基体1の径方向内側または周方向など異なる方向であってもよい。   Similarly, the substantially cylindrical second that is recessed to expose a part of the second conductor 22 (in the state where the second power receiving terminal 42 does not exist) on the other end surface opposite to the suction surface of the base 1. A concave portion 121 is formed, and a second through hole 12 having a circular cross section that penetrates the base 1 is formed at a location spaced from the second concave portion 121 (see FIG. 3B). In the present embodiment, two sets of the second recesses 121 and the second recesses are formed at two locations that are separated from the center of the base 1 by a second specified distance and that are spaced apart from each other by about 180 ° in the circumferential direction of the base 1. A through hole 12 is formed. In the present embodiment, the second through hole 12 is separated from the second recess 121 to the outside in the radial direction of the base body 1, but the separation direction may be a different direction such as a radial inside or a circumferential direction of the base body 1.

基体1の他端面に第2凹部121および第2貫通孔12を連続させるように窪んでいる第2溝部120が形成されている(図3B参照)。すなわち、第2溝部120は、第2貫通孔12および第2凹部121の離間方向に延在している。第2溝部120が第2凹部121よりも他端面から浅く窪むように形成されている。第2貫通孔12には、下部を上部よりも拡径させるように第2ザグリ部122が形成されている(図3B参照)。   A second groove portion 120 is formed in the other end surface of the base 1 so as to be continuous with the second recess 121 and the second through hole 12 (see FIG. 3B). That is, the second groove portion 120 extends in the direction in which the second through hole 12 and the second recess 121 are separated. The second groove 120 is formed so as to be shallower than the second recess 121 from the other end surface. A second counterbore portion 122 is formed in the second through hole 12 so that the diameter of the lower portion is larger than that of the upper portion (see FIG. 3B).

第1導電体21は、基体1において吸着面に対して平行な姿勢で埋設されている薄板状または薄膜状の金属からなり、静電チャック電極を構成する。本実施形態では独立した2個の第1導電体21が基体1に埋設されており、2個の第1受電端子41のそれぞれが当該2個の第1導電体21のそれぞれに対して接続されている。第2導電体22は、基体1において第1導電体21よりも吸着面から離れた高さ位置に、吸着面に対して平行な姿勢で埋設されている薄板状または薄膜状の金属からなり、発熱抵抗体を構成する。本実施形態では1個の第2導電体22が基体1に埋設されており、2個の第2受電端子42のそれぞれが第2導電体22の両端部のそれぞれに対して接続されている。   The first conductor 21 is made of a thin plate-like or thin-film metal embedded in the base 1 in a posture parallel to the attracting surface, and constitutes an electrostatic chuck electrode. In the present embodiment, two independent first conductors 21 are embedded in the base 1, and each of the two first power receiving terminals 41 is connected to each of the two first conductors 21. ing. The second conductor 22 is made of a thin plate-like or thin-film metal embedded in a posture parallel to the suction surface at a height position farther from the suction surface than the first conductor 21 in the base body 1. Constructs a heating resistor. In the present embodiment, one second conductor 22 is embedded in the base 1, and each of the two second power receiving terminals 42 is connected to each of both ends of the second conductor 22.

第1受電端子41は、略円柱状の第1要素411と、第1要素411よりも短い略円筒状の第2要素412と、第1要素411および第2要素412をその基端部で連続させる略平板状の中間要素410と、を備えている(図3A参照)。第1要素411は、基体1の第1凹部111に嵌入されて第1導電体21に対して接合(たとえばロウ付け)されている。第2要素412は、基体1の第1貫通孔11の第1ザグリ部112に嵌入され、その端面を当該第1ザグリ部112により形成されている第1貫通孔11の段差部に当接させている。中間要素410は、基体1の第1溝部110に嵌入されている。第1受電端子41の下端面は平坦であり、基体1の下面とその高さ位置が同じである(図3A参照)。   The first power receiving terminal 41 includes a first element 411 having a substantially columnar shape, a second element 412 having a substantially cylindrical shape shorter than the first element 411, and a first element 411 and a second element 412 that are continuous at the base end. A substantially flat intermediate element 410 (see FIG. 3A). The first element 411 is fitted into the first recess 111 of the base 1 and joined (for example, brazed) to the first conductor 21. The second element 412 is fitted into the first counterbore 112 of the first through-hole 11 of the base 1, and its end surface is brought into contact with the stepped portion of the first through-hole 11 formed by the first counterbore 112. ing. The intermediate element 410 is fitted into the first groove 110 of the base body 1. The lower end surface of the first power receiving terminal 41 is flat, and the height position of the lower surface of the base 1 is the same (see FIG. 3A).

第2受電端子42は、略円柱状の第1要素421と、第1要素421と同程度またはそれよりも若干長い略円筒状の第2要素422と、第1要素421および第2要素422をその基端部で連続させる略平板状の中間要素420と、を備えている(図3B参照)。第1要素421は、基体1の第2凹部121に嵌入されて第2導電体22に対して接合(たとえばロウ付け)されている。第2要素422は、基体1の第2貫通孔12の第2ザグリ部122に嵌入され、その端面を当該第2ザグリ部122により形成されている第2貫通孔12の段差部に当接させている。中間要素420は、基体1の第2溝部120に嵌入されている。第2受電端子42の下端面は平坦であり、基体1の下面とその高さ位置が同じである(図3B参照)。   The second power receiving terminal 42 includes a substantially cylindrical first element 421, a substantially cylindrical second element 422 that is the same as or slightly longer than the first element 421, and the first element 421 and the second element 422. And a substantially flat intermediate element 420 that continues at the base end (see FIG. 3B). The first element 421 is fitted into the second recess 121 of the base body 1 and joined (for example, brazed) to the second conductor 22. The second element 422 is fitted into the second counterbore portion 122 of the second through-hole 12 of the base body 1, and its end surface is brought into contact with the step portion of the second through-hole 12 formed by the second counterbore portion 122. ing. The intermediate element 420 is fitted into the second groove 120 of the base body 1. The lower end surface of the second power receiving terminal 42 is flat, and the height position of the lower surface of the base 1 is the same (see FIG. 3B).

(作製方法)
前記構成の静電チャック(基板保持装置)は、たとえば特開2013−157570号公報に記載されている方法にしたがって製造される。すなわち、第1導電体21(静電チャック電極)が埋設されている第1原料粉末の成形体と、第2導電体22(発熱抵抗体)が埋設されている第2原料粉末の成形体とが重ね合わせられた状態で、まとめてホットプレス焼結される。その上で、当該焼結体にピン10、第1貫通孔11、第2貫通孔12、第1凹部111および第2凹部121等がブラスト加工または機械加工などの適当な加工法にしたがって形成されることにより静電チャックが製造される。
(Production method)
The electrostatic chuck (substrate holding device) having the above-described configuration is manufactured, for example, according to a method described in JP2013-157570A. That is, a molded body of the first raw material powder in which the first conductor 21 (electrostatic chuck electrode) is embedded, and a molded body of the second raw material powder in which the second conductor 22 (heating resistor) is embedded. Are hot-press sintered together. Then, the pin 10, the first through hole 11, the second through hole 12, the first recess 111, the second recess 121, and the like are formed on the sintered body according to an appropriate processing method such as blasting or machining. Thus, the electrostatic chuck is manufactured.

第1原料粉末および第2原料粉末としては、たとえば高純度(例えば純度99.9%以上)の窒化アルミニウム粉末、必要に応じてこれに適量の酸化イットリウム粉末などの焼結助剤が添加された混合原料粉末が用いられる。そのほか、アルミナ粉末等、他のセラミックス粉末が原料粉末として用いられてもよい。第1導電体21および第2導電体22としては、たとえばMo箔(例えば厚さ0.1[mm])が用いられる。   As the first raw material powder and the second raw material powder, for example, a high-purity (for example, purity 99.9% or more) aluminum nitride powder, and if necessary, a sintering aid such as an appropriate amount of yttrium oxide powder was added thereto. Mixed raw material powder is used. In addition, other ceramic powders such as alumina powder may be used as the raw material powder. As the 1st conductor 21 and the 2nd conductor 22, Mo foil (for example, thickness 0.1 [mm]) is used, for example.

そのほか、第1導電体21およびこれを挟む一対の第1原料粉末の成形体と、第2導電体22及びこれを挟む一対の第2原料粉末の成形体とが重ね合わせられた状態で、まとめてホットプレス焼結されることにより静電チャックが製造されてもよい。また、第1導電体21が埋設されている第1原料粉末の成形体と、第2導電体22が埋設されている第2原料粉末の成形体とが別個にホットプレス焼結されることにより第1基体部分および第2基体部分が作製された上で、両基体部分が接合されることにより静電チャックが製造されてもよい。この場合、窒化アルミニウム焼結体の接合材としてアルミナ−酸化イットリウム系の接合材が用いられ、そのほかガラス系接合材が用いられてもよい。ガラス系材料としては、石英、ソーダ石灰ガラス、硼珪酸ガラスなどが採用される。   In addition, the first conductor 21 and a pair of first raw material powder compacts sandwiching the first conductor 21, and the second conductor 22 and a pair of second raw material powder compacts sandwiching the first conductor 21 are put together. The electrostatic chuck may be manufactured by hot press sintering. In addition, the compact of the first raw material powder in which the first conductor 21 is embedded and the compact of the second raw material powder in which the second conductor 22 is embedded are separately hot-press sintered. The electrostatic chuck may be manufactured by joining the base portions after the first base portion and the second base portion are manufactured. In this case, an alumina-yttrium oxide-based bonding material may be used as the bonding material for the aluminum nitride sintered body, and a glass-based bonding material may also be used. Quartz, soda-lime glass, borosilicate glass, etc. are employed as the glass material.

(機能)
前記構成の静電チャックによれば、図4Aに示されているようにボルトX1に、基体1の一端面側(吸着面側)から第1貫通孔11および第1受電端子41の筒状の第2要素412の中空部414を貫通させることができる。さらに、ボルトX1に、基体1の他端面側に接合されている平板状の基台5に形成された貫通孔を貫通させたうえで、ナットY1(または当該基台5に形成されている雌ネジ)に螺着させることができる。第1受電端子41と、外部電源に接続されているボルトX1(またはそのボルトヘッド)により構成されている第1給電端子との接続状態が安定に保持される。
(function)
According to the electrostatic chuck having the above-described configuration, as shown in FIG. 4A, the first through hole 11 and the first power receiving terminal 41 from the one end surface side (attraction surface side) of the base body 1 are connected to the bolt X1. The hollow portion 414 of the second element 412 can be penetrated. Further, the bolt X1 is made to pass through a through hole formed in the flat base 5 joined to the other end surface side of the base 1, and then the nut Y1 (or the female formed on the base 5). Screw). The connection state between the first power receiving terminal 41 and the first power supply terminal constituted by the bolt X1 (or its bolt head) connected to the external power supply is stably maintained.

図4Bに示されているようにボルトX2に、基体1の一端面側(吸着面側)から第2貫通孔12および第2受電端子42の筒状の第2要素422の中空部424を貫通させることができる。さらに、ボルトX2に、基体1の他端面側に接合されている平板状の基台5に形成された貫通孔を貫通させたうえで、ナットY2(または当該基台5に形成されている雌ネジ)に螺着させることができる。第2受電端子42と、外部電源に接続されているボルトX2(またはそのボルトヘッド)により構成されている第2給電端子との接続状態が安定に保持される。   As shown in FIG. 4B, the bolt X2 passes through the hollow portion 424 of the cylindrical second element 422 of the second through hole 12 and the second power receiving terminal 42 from the one end surface side (attraction surface side) of the base 1. Can be made. Further, the bolt X2 is made to pass through a through hole formed in the flat base 5 joined to the other end surface side of the base 1, and then the nut Y2 (or the female formed on the base 5). Screw). The connection state between the second power receiving terminal 42 and the second power feeding terminal constituted by the bolt X2 (or its bolt head) connected to the external power source is stably maintained.

この状態で、外部電源によって第1給電端子を構成するボルトX1および第1受電端子41を通じて、基体1に埋設されている静電チャック電極を構成する第1導電体21に対して電圧が印可されることにより、基体1の一端面側に載置されているウエハなどの基板がクーロン力などによって基体1に吸着保持される。外部電源によって第2給電端子を構成するボルトX2および第2受電端子42を通じて、基体1に埋設されている発熱抵抗体を構成する第2導電体22に対して電圧が印可または電流が供給されることにより、基板の温度の場所によらない均一化が図られる。   In this state, a voltage is applied to the first conductor 21 constituting the electrostatic chuck electrode embedded in the substrate 1 through the bolt X1 constituting the first power supply terminal and the first power receiving terminal 41 by the external power source. As a result, a substrate such as a wafer placed on one end surface side of the base 1 is attracted and held on the base 1 by a Coulomb force or the like. A voltage is applied or current is supplied to the second conductor 22 constituting the heating resistor embedded in the base body 1 through the bolt X2 constituting the second power feeding terminal and the second power receiving terminal 42 by the external power source. As a result, the substrate temperature can be made uniform regardless of the location of the temperature.

基体1の他端面に形成されている第1凹部111および第1貫通孔11(またはその第1ザグリ部112)のそれぞれに嵌入される第1受電端子41の第1要素411および第2要素412のそれぞれが中間要素410を介して連続しながら基体1の厚さ方向に対して垂直な方向に相互に離間している(図4A参照)。基体1の他端面に形成されている第2凹部121および第2貫通孔12(またはその第2ザグリ部122)のそれぞれに嵌入される第2受電端子42の第1要素421および第2要素422のそれぞれが中間要素420を介して連続しながら基体1の厚さ方向に対して垂直な方向に相互に離間している(図4B参照)。このため、第1要素および第2要素が軸線方向に重なるように配置されている構成の接続端子と比較して、第1受電端子41および第2受電端子42の薄型化または軸線方向への短縮)、ひいては基体1の薄型化が図られる。   The first element 411 and the second element 412 of the first power receiving terminal 41 inserted into the first recess 111 and the first through hole 11 (or the first counterbore part 112) formed on the other end surface of the base body 1, respectively. Are spaced apart from each other in a direction perpendicular to the thickness direction of the substrate 1 while continuing through the intermediate element 410 (see FIG. 4A). The first element 421 and the second element 422 of the second power receiving terminal 42 inserted into the second recess 121 and the second through hole 12 (or the second counterbore part 122) formed on the other end surface of the base body 1, respectively. Are spaced apart from each other in a direction perpendicular to the thickness direction of the substrate 1 while continuing through the intermediate element 420 (see FIG. 4B). For this reason, compared with the connection terminal of the structure arrange | positioned so that a 1st element and a 2nd element may overlap in an axial direction, thickness reduction of the 1st power receiving terminal 41 and the 2nd power receiving terminal 42 or shortening to an axial direction ) As a result, the substrate 1 can be thinned.

(本発明の他の実施形態)
前記実施形態における基板保持装置(静電チャック)において、第2導電体22が省略され、これに対応して第2貫通孔12、第2凹部121および第2溝部120が省略されてもよい。
(Other embodiments of the present invention)
In the substrate holding device (electrostatic chuck) in the embodiment, the second conductor 22 may be omitted, and the second through hole 12, the second recess 121, and the second groove 120 may be omitted correspondingly.

前記実施形態における基板保持装置において、第1導電体21および第2導電体22に加えてまたは第1導電体21もしくは第2導電体22に代えて、高周波電圧印加用電極または接地用電極を構成する導電体が基体1に埋設され、当該導電体に対応する貫通孔、凹部および溝部が基体1に形成され、そこに受電端子が設けられていてもよい。   In the substrate holding device in the embodiment, in addition to the first conductor 21 and the second conductor 22, or instead of the first conductor 21 or the second conductor 22, a high-frequency voltage application electrode or a ground electrode is configured. The conductor to be embedded may be embedded in the base 1, and a through hole, a concave portion and a groove corresponding to the conductor may be formed in the base 1, and a power receiving terminal may be provided there.

基体1において第1溝部110および第2溝部120のうち一方または両方が省略されてもよい。この場合、第1受電端子41の下端面および第2受電端子42の下端面のうち一方または両方が基体1の他端面(下面)よりも下方に突出するが、基台5に当該突出部分を受容する凹部が形成されることにより、基体1の下端面を全体的に基台5の上端面に対して接合させることができる(図4Aおよび図4B参照)。   One or both of the first groove part 110 and the second groove part 120 may be omitted from the base body 1. In this case, one or both of the lower end surface of the first power receiving terminal 41 and the lower end surface of the second power receiving terminal 42 protrudes downward from the other end surface (lower surface) of the base 1. By forming the recessed part to receive, the lower end surface of the base | substrate 1 can be joined to the upper end surface of the base 5 entirely (refer FIG. 4A and FIG. 4B).

第1溝部110および第1凹部111の基体1の下端面からの深さが一致していてもよい(図3A参照)。第2溝部120および第2凹部121の基体1の下端面からの深さが一致していてもよい(図3B参照)。   The depths of the first groove 110 and the first recess 111 from the lower end surface of the base body 1 may match (see FIG. 3A). The depths of the second groove 120 and the second recess 121 from the lower end surface of the base 1 may be the same (see FIG. 3B).

第1貫通孔11において第1ザグリ部112が省略され、第1貫通孔11が略円柱状に形成されてもよい。第2貫通孔12において第2ザグリ部122が省略され、第2貫通孔12が略円柱状に形成されてもよい。   The first counterbore 112 may be omitted in the first through hole 11 and the first through hole 11 may be formed in a substantially cylindrical shape. The second counterbore part 122 may be omitted in the second through hole 12 and the second through hole 12 may be formed in a substantially cylindrical shape.

1‥基体、10‥ピン、11‥第1貫通孔、12‥第2貫通孔、21‥第1導電体(静電チャック電極)、22‥第2導電体(発熱抵抗体)、41‥第1受電端子、42‥第2受電端子、110‥第1溝部、111‥第1凹部、112‥第1ザグリ部、120‥第2溝部、121‥第2凹部、122‥第2ザグリ部、410‥中間要素、411‥第1要素、412‥第2要素、420‥中間要素、421‥第1要素、422‥第2要素。 DESCRIPTION OF SYMBOLS 1 ... Base | substrate, 10 ... Pin, 11 ... 1st through-hole, 12 ... 2nd through-hole, 21 ... 1st conductor (electrostatic chuck electrode), 22 ... 2nd conductor (heating resistor), 41 ... 1st DESCRIPTION OF SYMBOLS 1 Power receiving terminal, 42 ... 2nd power receiving terminal, 110 ... 1st groove part, 111 ... 1st recessed part, 112 ... 1st counterbore part, 120 ... 2nd groove part, 121 ... 2nd recessed part, 122 ... 2nd counterbore part, 410 Intermediate element 411 First element 412, Second element 420 Intermediate element 421 First element 422 Second element

Claims (4)

一端面に基板が保持または載置される平板状の基体と、前記基体に埋設されている導電体と、前記導電体に電気的に接続される受電端子と、を備えている基板保持装置であって、
前記基体の他端面に前記導電体の一部を露出させるように窪んでいる凹部が形成され、前記凹部から離間した箇所で前記基体を貫通する貫通孔が形成され、
前記受電端子が、前記基体の前記凹部に嵌入されて前記導電体に対して接合される第1要素と、前記基体の前記貫通孔の途中まで嵌入される筒状の第2要素と、前記第1要素および前記第2要素を連続させる中間要素と、を備えていることを特徴とする基板保持装置。
A substrate holding apparatus comprising: a flat base on which a substrate is held or placed on one end face; a conductor embedded in the base; and a power receiving terminal electrically connected to the conductor. There,
A recess that is recessed so as to expose a part of the conductor is formed on the other end surface of the substrate, and a through-hole that penetrates the substrate is formed at a location spaced from the recess,
A first element inserted into the recess of the base and joined to the conductor; a cylindrical second element inserted halfway through the through hole of the base; A substrate holding apparatus comprising: one element and an intermediate element that makes the second element continuous.
請求項1記載の基板保持装置において、
前記基体の前記他端面に前記凹部および前記貫通孔を連続させるように窪み、前記受電端子の前記中間要素が嵌入される溝部が形成されていることを特徴とする基板保持装置。
The substrate holding apparatus according to claim 1, wherein
The substrate holding apparatus, wherein the recess and the through hole are continuously formed in the other end surface of the base body, and a groove portion into which the intermediate element of the power receiving terminal is inserted is formed.
請求項2記載の基板保持装置において、
前記基体の前記溝部が前記凹部よりも前記他端面から浅く窪むように形成されていることを特徴とする基板保持装置。
The substrate holding apparatus according to claim 2, wherein
The substrate holding apparatus, wherein the groove portion of the base body is formed so as to be recessed shallower from the other end surface than the concave portion.
請求項1〜3のうちいずれか1つに記載の基板保持装置において、
前記基体において前記貫通孔に前記第2要素が嵌入されるザグリ部が形成されていることを特徴とする基板保持装置。
In the board | substrate holding | maintenance apparatus as described in any one of Claims 1-3,
The substrate holding device, wherein a counterbore portion into which the second element is inserted into the through hole is formed in the base body.
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