JP6468540B2 - Substrate transport mechanism, substrate mounting mechanism, film forming apparatus, and methods thereof - Google Patents
Substrate transport mechanism, substrate mounting mechanism, film forming apparatus, and methods thereof Download PDFInfo
- Publication number
- JP6468540B2 JP6468540B2 JP2017101235A JP2017101235A JP6468540B2 JP 6468540 B2 JP6468540 B2 JP 6468540B2 JP 2017101235 A JP2017101235 A JP 2017101235A JP 2017101235 A JP2017101235 A JP 2017101235A JP 6468540 B2 JP6468540 B2 JP 6468540B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- support
- support portion
- pressing
- mounting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
- H10P72/3302—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
- H10P72/3311—Horizontal transfer of a batch of workpieces
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Robotics (AREA)
Description
本発明は、電子デバイスの表示パネルに用いられる基板の搬送装置、載置装置、成膜装置及びそれらの方法に関する。 The present invention relates to a substrate transfer apparatus, a mounting apparatus, a film forming apparatus, and a method thereof used for a display panel of an electronic device.
近年、有機電子デバイスに用いられる表示パネルは、基板の薄型化が進む一方で、バルク生産の効率を上げるため、複数のパネル用に切り出すべく製作する基板一枚のサイズの大型化も進んでいる。そのような大型基板の成膜手法として、基板を、その外周部(周縁部)を挟持して持ち上げ、基板表面に薄膜の材料層を形成するためのマスク(載置体)上に載置し、マスクを介して材料の蒸着を行う手法が知られている(特許文献1)。 In recent years, display panels used in organic electronic devices have become thinner, while the size of a single substrate to be cut out for multiple panels is also increasing in order to increase the efficiency of bulk production. . As a method for forming such a large substrate, the substrate is lifted with its outer peripheral portion (peripheral portion) sandwiched and placed on a mask (mounting body) for forming a thin film material layer on the substrate surface. A method of vapor-depositing a material through a mask is known (Patent Document 1).
薄型化及び大型化された基板の製作では、基板の自重によるたわみの影響が大きい。すなわち、成膜領域を基板中央部に設ける関係上、基板を挟持できるのは基板の外周部に限られるため、外周部を挟持して持ち上げた際に、支えのない中央部がたわんでしまう。基板をマスク上に載置する際には、たわんで下方に突き出た中央部からマスクに接触するため、たわみの具合によって載置位置が変化してしまう場合がある。そのため、所望の載置位置に載置できるまで、マスク上に何度も置き直すアライメント工程が必要となる。基板のたわみ具合は、個々の基板でばらつきがあり、また、挟持機構による挟持の具合によっても、マスク上に載置した際の位置ズレの程度が変化する。 In the manufacture of thin and large substrates, the influence of deflection due to the weight of the substrate is large. That is, since the film formation region is provided in the central portion of the substrate, the substrate can be sandwiched only at the outer peripheral portion of the substrate. Therefore, when the peripheral portion is sandwiched and lifted, the unsupported central portion is bent. When the substrate is placed on the mask, the placement position may change depending on the degree of deflection because the substrate comes into contact with the mask from the central portion that is bent and protrudes downward. Therefore, it is necessary to perform an alignment process in which the substrate is repeatedly placed on the mask until it can be placed at a desired placement position. The degree of deflection of the substrate varies among individual substrates, and the degree of positional deviation when placed on the mask also changes depending on the degree of clamping by the clamping mechanism.
本発明の目的は、基板の搬送や載置において基板のたわみの影響を低減することができる技術を提供することである。 The objective of this invention is providing the technique which can reduce the influence of the bending of a board | substrate in conveyance and mounting of a board | substrate.
上記目的を達成するため、本発明の基板搬送機構は、
基板の下面を支持した第1支持部が、複数の第2支持部よりも高い位置から複数の前記第2支持部の間を通過して前記第2支持部よりも低い位置へ相対移動することで、前記第2支持部が前記基板の下面を支持する状態とし、前記第2支持部に支持された前記基板の上面を押圧部で押圧して、前記基板を前記第2支持部と前記押圧部とで挟持する基板搬送機構において、
前記第1支持部と前記第2支持部と前記押圧部との相対位置を制御する制御部は、前記下面を前記第2支持部が支持する状態となってから前記押圧部が前記上面を押圧するまでの間、前記第1支持部を複数の前記第2支持部の間に位置させ、前記押圧部が前記上面を押圧した後に、前記第1支持部を前記低い位置へ相対移動させるこことを特徴とする。
上記目的を達成するため、本発明の基板載置機構は、
上記基板搬送機構と、
前記基板を載置するための載置体と、
を有し、
前記制御部は、前記第2支持部及び前記押圧部と前記載置体との間の相対位置を制御して、前記第2支持部と前記押圧部によって挟持した前記基板を、前記載置体上に載置する
ことを特徴とする。
上記目的を達成するため、本発明の成膜装置は、
前記載置体として、前記基板に成膜するための蒸着処理を施すためのマスクを有する、上記基板載置機構と、
前記マスクに載置された前記基板に対して前記マスクを介して蒸着物質を供給する供給源と、
前記基板載置機構と、前記供給源と、を収容するチャンバと、
を有することを特徴とする。
上記目的を達成するため、本発明の基板搬送方法は、
基板搬送方法であって、
基板の下面を支持した第1支持部を、複数の第2支持部よりも高い位置から、複数の前記第2支持部の間の位置へ相対移動させる受渡工程と、
前記第1支持部が複数の前記第2支持部の間に位置している間に、前記基板を前記第2支持部と押圧部との間で挟持する状態とすべく前記押圧部で前記基板の上面を押圧させる挟持工程と、
前記基板が前記第2支持部と前記押圧部とで挟持されたら、前記第1支持部を前記第2支持部よりも低い位置へ相対移動させる退避工程と、
を含む
ことを特徴とする。
上記目的を達成するため、本発明の基板載置方法は、
上記基板搬送方法における各工程と、
前記挟持工程によって前記第2支持部と前記押圧部によって挟持した前記基板を、載置体上に載置する載置工程と、
を含むことを特徴とする。
上記目的を達成するため、本発明の成膜方法は、
上記基板載置方法における各工程と、
前記載置工程として、前記載置体としての、前記基板に成膜するための蒸着処理を施すためのマスク上に、前記基板を載置する載置工程と、
前記マスクに載置された前記基板に対して前記マスクを介して蒸着物質を供給して前記蒸着処理を施す蒸着工程と、
を含むことを特徴とする。
In order to achieve the above object, the substrate transport mechanism of the present invention comprises:
First support portion supporting the lower surface of the substrate, the relative movement passes between the plurality of the second support portion from a position higher than the plurality of second support portion to the position lower than the second support section Then, the second support portion supports the lower surface of the substrate, the upper surface of the substrate supported by the second support portion is pressed by the pressing portion, and the substrate is pressed against the second support portion and the second support portion. In the substrate transport mechanism sandwiched between
The control unit that controls the relative positions of the first support unit, the second support unit, and the pressing unit is configured so that the pressing unit presses the upper surface after the lower surface is supported by the second support unit. Until the first support portion is positioned between the plurality of second support portions, and after the pressing portion presses the upper surface, the first support portion is relatively moved to the lower position. It is characterized by.
In order to achieve the above object, the substrate mounting mechanism of the present invention comprises:
The substrate transport mechanism;
A mounting body for mounting the substrate;
Have
The control unit controls a relative position between the second support unit and the pressing unit and the mounting body, and the substrate sandwiched between the second support unit and the pressing unit is placed on the mounting body. It is mounted on the top.
In order to achieve the above object, the film forming apparatus of the present invention comprises:
The substrate mounting mechanism having a mask for performing a vapor deposition process for forming a film on the substrate as the mounting body,
A supply source for supplying a deposition material to the substrate placed on the mask through the mask;
A chamber for accommodating the substrate mounting mechanism and the supply source;
It is characterized by having.
In order to achieve the above object, the substrate transport method of the present invention comprises:
A substrate transfer method,
The first support portion supporting the lower surface of the substrate, from a higher position than the plurality of second supporting portions, a delivery step for relatively moving the position between the plurality of the second supporting portion,
While the first support portion is positioned between the plurality of second support portions, the substrate is held by the pressing portion so that the substrate is held between the second support portion and the pressing portion. A clamping step of pressing the upper surface of
When the substrate is sandwiched between the second support portion and the pressing portion, a retreating step of relatively moving the first support portion to a position lower than the second support portion ;
It is characterized by including.
In order to achieve the above object, the substrate mounting method of the present invention comprises:
Each step in the substrate transport method,
A placement step of placing the substrate sandwiched between the second support portion and the pressing portion by the sandwiching step on a placement body;
It is characterized by including.
In order to achieve the above object, the film forming method of the present invention comprises:
Each step in the substrate mounting method,
As the placement step, a placement step of placing the substrate on a mask for performing a vapor deposition process for forming a film on the substrate as the placement body;
A deposition process of supplying a deposition material to the substrate placed on the mask through the mask and performing the deposition process;
It is characterized by including.
本発明によれば、基板の搬送や載置において基板のたわみの影響を低減することができる。 According to the present invention, it is possible to reduce the influence of the deflection of the substrate in transporting and placing the substrate.
以下、図面を参照しつつ本発明の好適な実施形態及び実施例を説明する。ただし、以下の実施形態及び実施例は本発明の好ましい構成を例示的に示すものにすぎず、本発明の範囲をそれらの構成に限定されない。また、以下の説明における、装置のハードウェア構成及びソフトウェア構成、処理フロー、製造条件、寸法、材質、形状などは、特に特定的な
記載がないかぎりは、本発明の範囲をそれらのみに限定する趣旨のものではない。
Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples are merely illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In the following description, the hardware configuration and software configuration of the apparatus, processing flow, manufacturing conditions, dimensions, materials, shapes, and the like limit the scope of the present invention only to those unless otherwise specified. It is not intended.
本発明は、基板上に薄膜を形成する成膜装置及びその制御方法に関し、特に、基板の高精度な搬送および位置調整のための技術に関する。本発明は、平行平板の基板の表面に真空蒸着により所望のパターンの薄膜(材料層)を形成する装置に好ましく適用できる。基板の材料としては、ガラス、樹脂、金属などの任意の材料を選択でき、また、蒸着材料としても、有機材料、無機材料(金属、金属酸化物など)などの任意の材料を選択できる。本発明の技術は、具体的には、有機電子デバイス(例えば、有機EL表示装置、薄膜太陽電池)、光学部材などの製造装置に適用可能である。なかでも、有機EL表示装置の製造装置は、基板の大型化あるいは表示パネルの高精細化により基板の搬送精度及び基板とマスクのアライメント精度のさらなる向上が要求されているため、本発明の好ましい適用例の一つである。 The present invention relates to a film forming apparatus for forming a thin film on a substrate and a control method thereof, and more particularly, to a technique for highly accurate conveyance and position adjustment of a substrate. The present invention can be preferably applied to an apparatus for forming a thin film (material layer) having a desired pattern by vacuum deposition on the surface of a parallel plate substrate. Arbitrary materials such as glass, resin, and metal can be selected as the material of the substrate, and any material such as organic material and inorganic material (metal, metal oxide, etc.) can be selected as the vapor deposition material. Specifically, the technology of the present invention can be applied to manufacturing apparatuses such as organic electronic devices (for example, organic EL display devices, thin film solar cells), optical members, and the like. In particular, the organic EL display device manufacturing apparatus is required to further improve the substrate transport accuracy and the substrate / mask alignment accuracy by increasing the size of the substrate or increasing the definition of the display panel. This is one example.
[実施例1]
<製造装置及び製造プロセス>
図1は、電子デバイスの製造装置の構成の一部を模式的に示す上視図である。図1の製造装置は、例えば、スマートフォン用の有機EL表示装置の表示パネルの製造に用いられる。スマートフォン用の表示パネルの場合、例えば約1800mm×約1500mm、厚み約0.5mmのサイズの基板に有機ELの成膜を行った後、該基板をダイシングして複数の小サイズのパネルが作製される。
[Example 1]
<Manufacturing equipment and manufacturing process>
FIG. 1 is a top view schematically showing a part of the configuration of an electronic device manufacturing apparatus. The manufacturing apparatus of FIG. 1 is used, for example, for manufacturing a display panel of an organic EL display device for a smartphone. In the case of a display panel for a smartphone, for example, after forming an organic EL film on a substrate having a size of about 1800 mm × about 1500 mm and a thickness of about 0.5 mm, the substrate is diced to produce a plurality of small size panels. The
電子デバイスの製造装置は、一般に、図1に示すように、複数の成膜室111、112と、搬送室110とを有する。搬送室110内には、基板10を保持し搬送する搬送ロボット119が設けられている。搬送ロボット119は、例えば、多関節アームに、基板を保持するロボットハンドが取り付けられた構造をもつロボットであり(詳細は後述する。)、各成膜室への基板10の搬入/搬出を行う。 An electronic device manufacturing apparatus generally has a plurality of film forming chambers 111 and 112 and a transfer chamber 110 as shown in FIG. In the transfer chamber 110, a transfer robot 119 for holding and transferring the substrate 10 is provided. The transfer robot 119 is, for example, a robot having a structure in which a robot hand for holding a substrate is attached to an articulated arm (details will be described later), and the substrate 10 is carried into and out of each film forming chamber. .
各成膜室111、112にはそれぞれ成膜装置(蒸着装置ともよぶ)が設けられている。搬送ロボット119との基板10の受け渡し、基板10とマスクの相対位置の調整(アライメント)、マスク上への基板10の固定、成膜(蒸着)などの一連の成膜プロセスは、成膜装置によって自動で行われる。各成膜室の成膜装置は、蒸着源の違いやマスクの違いなど細かい点で相違する部分はあるものの、基本的な構成(特に基板の搬送やアライメントに関わる構成)はほぼ共通している。以下、各成膜室の成膜装置の共通構成について説明する。 Each of the film formation chambers 111 and 112 is provided with a film formation apparatus (also referred to as a vapor deposition apparatus). A series of film formation processes such as delivery of the substrate 10 to the transfer robot 119, adjustment of the relative position between the substrate 10 and the mask (alignment), fixation of the substrate 10 on the mask, film formation (evaporation) are performed by the film formation apparatus. Done automatically. The film forming apparatus in each film forming chamber has almost the same basic structure (particularly, the structure related to substrate transport and alignment), although there are differences in details such as the difference in vapor deposition source and mask. . Hereinafter, a common configuration of the film forming apparatuses in the respective film forming chambers will be described.
<成膜装置>
図2は、成膜装置の構成を模式的に示す断面図である。以下の説明においては、鉛直方向をZ方向とするXYZ直交座標系を用いる。成膜時に基板は水平面(XY平面)と平行となるよう固定されるものとし、このときの基板の短手方向(短辺に平行な方向)をX方向、長手方向(長辺に平行な方向)をY方向とする。またZ軸まわりの回転角をθで表す。
<Deposition system>
FIG. 2 is a cross-sectional view schematically showing the configuration of the film forming apparatus. In the following description, an XYZ orthogonal coordinate system in which the vertical direction is the Z direction is used. At the time of film formation, the substrate is fixed so as to be parallel to the horizontal plane (XY plane), and the short direction (direction parallel to the short side) of the substrate at this time is the X direction, and the long direction (direction parallel to the long side). ) In the Y direction. The rotation angle around the Z axis is represented by θ.
成膜装置は、真空チャンバ200を有する。真空チャンバ200の内部は、真空雰囲気か、窒素ガスなどの不活性ガス雰囲気に維持されている。真空チャンバ200の内部には、概略、基板保持ユニット210と、マスク220と、マスク台221と、冷却板230と、蒸着源240が設けられる。基板保持ユニット210は、搬送ロボット119から受け取った基板10を保持・搬送する手段であり、基板ホルダとも呼ばれる。マスク220は、基板10上に形成する薄膜パターンに対応する開口パターンをもつメタルマスクであり、枠状のマスク台221の上に固定されている。成膜時にはマスク220の上に基板10が載置される。したがってマスク220は基板10を載置する載置体としての役割も担
う。冷却板230は、成膜時に基板10(のマスク220とは反対側の面)に密着し、基板10の温度上昇を抑えることで有機材料の変質や劣化を抑制する部材である。冷却板230がマグネット板を兼ねていてもよい。マグネット板とは、磁力によってマスク220を引き付けることで、成膜時の基板10とマスク220の密着性を高める部材である。蒸着源240は、蒸着材料、ヒータ、シャッタ、蒸発源の駆動機構、蒸発レートモニタなどから構成される(いずれも不図示)。
The film forming apparatus has a vacuum chamber 200. The inside of the vacuum chamber 200 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. In the vacuum chamber 200, a substrate holding unit 210, a mask 220, a mask base 221, a cooling plate 230, and a vapor deposition source 240 are generally provided. The substrate holding unit 210 is means for holding and transporting the substrate 10 received from the transport robot 119, and is also called a substrate holder. The mask 220 is a metal mask having an opening pattern corresponding to the thin film pattern formed on the substrate 10, and is fixed on the frame-shaped mask base 221. The substrate 10 is placed on the mask 220 during film formation. Therefore, the mask 220 also serves as a mounting body on which the substrate 10 is mounted. The cooling plate 230 is a member that is in close contact with the substrate 10 (the surface opposite to the mask 220) during film formation and suppresses an increase in temperature of the substrate 10, thereby suppressing deterioration and deterioration of the organic material. The cooling plate 230 may also serve as a magnet plate. The magnet plate is a member that enhances the adhesion between the substrate 10 and the mask 220 during film formation by attracting the mask 220 with a magnetic force. The evaporation source 240 includes an evaporation material, a heater, a shutter, an evaporation source drive mechanism, an evaporation rate monitor, and the like (all not shown).
真空チャンバ200の上(外側)には、基板Zアクチュエータ250、クランプZアクチュエータ251、冷却板Zアクチュエータ252、Xアクチュエータ(不図示)、Yアクチュエータ(不図示)、θアクチュエータ(不図示)が設けられている。これらのアクチュエータは、例えば、モータとボールねじ、モータとリニアガイドなどで構成される。基板Zアクチュエータ250は、基板保持ユニット210の全体を昇降(Z方向移動)させるための駆動手段である。クランプZアクチュエータ251は、基板保持ユニット210の挟持機構(後述)を開閉させるための駆動手段である。冷却板Zアクチュエータ252は、冷却板230を昇降させるための駆動手段である。Xアクチュエータ、Yアクチュエータ、θアクチュエータ(以下まとめて「XYθアクチュエータ」と呼ぶ)は基板10のアライメントのための駆動手段である。XYθアクチュエータは、基板保持ユニット210及び冷却板230の全体を、X方向移動、Y方向移動、θ回転させる。なお、本実施形態では、マスク220を固定した状態で基板10のX,Y,θを調整する構成としたが、マスク220の位置を調整し、又は、基板10とマスク220の両者の位置を調整することで、基板10とマスク220のアライメントを行ってもよい。 A substrate Z actuator 250, a clamp Z actuator 251, a cooling plate Z actuator 252, an X actuator (not shown), a Y actuator (not shown), and a θ actuator (not shown) are provided above (outside) the vacuum chamber 200. ing. These actuators include, for example, a motor and a ball screw, a motor and a linear guide, and the like. The substrate Z actuator 250 is a driving means for moving the entire substrate holding unit 210 up and down (moving in the Z direction). The clamp Z actuator 251 is a driving unit for opening and closing a clamping mechanism (described later) of the substrate holding unit 210. The cooling plate Z actuator 252 is driving means for moving the cooling plate 230 up and down. The X actuator, Y actuator, and θ actuator (hereinafter collectively referred to as “XYθ actuator”) are drive means for alignment of the substrate 10. The XYθ actuator rotates the entire substrate holding unit 210 and the cooling plate 230 in the X direction, the Y direction, and θ rotation. In this embodiment, the X, Y, and θ of the substrate 10 are adjusted with the mask 220 fixed. However, the position of the mask 220 is adjusted, or the positions of both the substrate 10 and the mask 220 are adjusted. By adjusting, the substrate 10 and the mask 220 may be aligned.
真空チャンバ200の上(外側)には、基板10及びマスク220のアライメントのために、基板10及びマスク220それぞれの位置を測定するカメラ260、261が設けられている。カメラ260、261は、真空チャンバ200に設けられた窓を通して、基板10とマスク220を撮影する。その画像から基板10上のアライメントマーク及びマスク220上のアライメントマークを認識することで、各々のXY位置やXY面内での相対ズレを計測することができる。短時間で高精度なアライメントを実現するために、大まかに位置合わせを行う第1アライメント(「ラフアライメント」とも称す)と、高精度に位置合わせを行う第2アライメント(「ファインアライメント」とも称す)の2段階のアライメントを実施することが好ましい。その場合、低解像だが広視野の第1アライメント用のカメラ260と狭視野だが高解像の第2アライメント用のカメラ261の2種類のカメラを用いるとよい。本実施形態では、基板10及びマスク220それぞれについて、対向する一対の辺の2箇所に付されたアライメントマークを2台の第1アライメント用のカメラ260で測定し、基板10及びマスク220の4隅に付されたアライメントマークを4台の第2アライメント用のカメラ261で測定する。 Cameras 260 and 261 for measuring the positions of the substrate 10 and the mask 220 are provided above (outside) the vacuum chamber 200 in order to align the substrate 10 and the mask 220. The cameras 260 and 261 photograph the substrate 10 and the mask 220 through a window provided in the vacuum chamber 200. By recognizing the alignment mark on the substrate 10 and the alignment mark on the mask 220 from the image, each XY position and relative displacement in the XY plane can be measured. In order to achieve high-precision alignment in a short time, a first alignment that roughly aligns (also referred to as “rough alignment”) and a second alignment that aligns with high accuracy (also referred to as “fine alignment”). It is preferable to perform the two-stage alignment. In that case, it is preferable to use two types of cameras, a low-resolution but wide-field first alignment camera 260 and a narrow-field but high-resolution second alignment camera 261. In the present embodiment, for each of the substrate 10 and the mask 220, alignment marks attached to two locations on a pair of opposing sides are measured by two first alignment cameras 260, and the four corners of the substrate 10 and the mask 220 are measured. The alignment marks attached to are measured with four second alignment cameras 261.
成膜装置は、制御部270を有する。制御部270は、基板Zアクチュエータ250、クランプZアクチュエータ251、冷却板Zアクチュエータ252、XYθアクチュエータ、及びカメラ260、261の制御の他、基板10の搬送及びアライメント、蒸着源の制御、成膜の制御などの機能を有する。制御部270は、例えば、プロセッサ、メモリ、ストレージ、I/Oなどを有するコンピュータにより構成可能である。この場合、制御部270の機能は、メモリ又はストレージに記憶されたプログラムをプロセッサが実行することにより実現される。コンピュータとしては、汎用のパーソナルコンピュータを用いてもよいし、組込型のコンピュータ又はPLC(programmable logic controller)を用いてもよい。あるいは、制御部270の機能の一部又は全部をASICやFPGAのような回路で構成してもよい。なお、成膜装置ごとに制御部270が設けられていてもよいし、1つの制御部270が複数の成膜装置を制御してもよい。 The film forming apparatus includes a control unit 270. The control unit 270 controls the substrate Z actuator 250, the clamp Z actuator 251, the cooling plate Z actuator 252, the XYθ actuator, and the cameras 260 and 261, as well as transport and alignment of the substrate 10, deposition source control, and film formation control. It has functions such as. The control unit 270 can be configured by a computer having a processor, memory, storage, I / O, and the like, for example. In this case, the function of the control unit 270 is realized by the processor executing a program stored in the memory or storage. As the computer, a general-purpose personal computer may be used, or an embedded computer or a PLC (programmable logic controller) may be used. Alternatively, some or all of the functions of the control unit 270 may be configured by a circuit such as an ASIC or FPGA. Note that a control unit 270 may be provided for each film forming apparatus, or one control unit 270 may control a plurality of film forming apparatuses.
なお、基板10の保持・搬送及びアライメントに関わる構成部分(基板保持ユニット2
10、基板Zアクチュエータ250、クランプZアクチュエータ251、XYθアクチュエータ、カメラ260、261、制御部270など)は、「基板載置装置」、「基板挟持装置」、「基板搬送装置」などとも呼ばれる。
Note that the components related to the holding / transport and alignment of the substrate 10 (substrate holding unit 2)
10, the substrate Z actuator 250, the clamp Z actuator 251, the XYθ actuator, the cameras 260 and 261, the control unit 270 and the like are also referred to as “substrate mounting device”, “substrate holding device”, “substrate transport device”, and the like.
<基板保持ユニット>
図3を参照して基板保持ユニット210の構成を説明する。図3は基板保持ユニット210の斜視図である。
<Board holding unit>
The configuration of the substrate holding unit 210 will be described with reference to FIG. FIG. 3 is a perspective view of the substrate holding unit 210.
基板保持ユニット210は、挟持機構によって基板10の周縁部を挟持することにより、基板10を保持・搬送する手段である。具体的には、基板保持ユニット210は、基板10の4辺それぞれを下から支持する複数の支持具300が設けられた支持枠体301と、各支持具300との間で基板10を挟み込む複数の押圧具302が設けられたクランプ部材303とを有する。一対の支持具300と押圧具302とで1つの挟持機構が構成される。図3の例では、基板10の短辺に沿って3つの支持具300が配置され、長辺に沿って6つの挟持機構(支持具300と押圧具302のペア)が配置されており、長辺2辺を挟持する構成となっている。ただし挟持機構の構成は図3の例に限られず、処理対象となる基板のサイズや形状あるいは成膜条件などに合わせて、挟持機構の数や配置を適宜変更してもよい。なお、支持具300は「受け爪」又は「フィンガ」とも呼ばれ、押圧具302は「クランプ」とも呼ばれる。 The substrate holding unit 210 is means for holding and transporting the substrate 10 by holding the peripheral edge portion of the substrate 10 by a holding mechanism. Specifically, the substrate holding unit 210 includes a plurality of support frames 301 provided with a plurality of support tools 300 that support each of the four sides of the substrate 10 from below, and a plurality of the substrate 10 sandwiched between the support tools 300. And a clamp member 303 provided with the pressing tool 302. The pair of support tools 300 and the pressing tool 302 constitute one clamping mechanism. In the example of FIG. 3, three support tools 300 are arranged along the short side of the substrate 10, and six clamping mechanisms (a pair of the support tool 300 and the pressing tool 302) are arranged along the long side. It is configured to sandwich two sides. However, the configuration of the clamping mechanism is not limited to the example of FIG. 3, and the number and arrangement of the clamping mechanisms may be changed as appropriate in accordance with the size and shape of the substrate to be processed or the film formation conditions. The support tool 300 is also called a “receiving claw” or “finger”, and the pressing tool 302 is also called a “clamp”.
搬送ロボット119から基板保持ユニット210への基板10の受け渡しは例えば次のように行われる。まず、クランプZアクチュエータ251によりクランプ部材303を上昇させ、押圧具302を支持具300から離間させることで、挟持機構を解放状態にする。搬送ロボット119によって支持具300と押圧具302の間に基板10を導入した後、クランプZアクチュエータ251によってクランプ部材303を下降させ、押圧具302を所定の押圧力で支持具300に押し当てる。これにより、押圧具302と支持具300の間で基板10が挟持される。この状態で基板Zアクチュエータ250により基板保持ユニット210を駆動することで、基板10を昇降(Z方向移動)させることができる。なお、クランプZアクチュエータ251は基板保持ユニット210と共に上昇/下降するため、基板保持ユニット210が昇降しても挟持機構の状態は変化しない。 For example, the transfer of the substrate 10 from the transfer robot 119 to the substrate holding unit 210 is performed as follows. First, the clamp member 303 is raised by the clamp Z actuator 251, and the pressing tool 302 is separated from the support tool 300, so that the clamping mechanism is released. After the substrate 10 is introduced between the support tool 300 and the pressing tool 302 by the transport robot 119, the clamp member 303 is lowered by the clamp Z actuator 251, and the pressing tool 302 is pressed against the support tool 300 with a predetermined pressing force. As a result, the substrate 10 is sandwiched between the pressing tool 302 and the support tool 300. In this state, by driving the substrate holding unit 210 by the substrate Z actuator 250, the substrate 10 can be moved up and down (moved in the Z direction). Since the clamp Z actuator 251 is raised / lowered together with the substrate holding unit 210, the state of the clamping mechanism does not change even when the substrate holding unit 210 is raised / lowered.
なお、図3の符号101は、基板10の4隅に付された第2アライメント用のアライメントマークを示し、符号102は、基板10の短辺中央に付された第1アライメント用のアライメントマークを示している。 3 indicates a second alignment alignment mark attached to the four corners of the substrate 10, and reference numeral 102 indicates a first alignment alignment mark attached to the center of the short side of the substrate 10. Show.
<電子デバイスの製造方法の実施例>
次に、本実施形態の成膜装置を用いた電子デバイスの製造方法の一例を説明する。以下、電子デバイスの例として有機EL表示装置の構成及び製造方法を例示する。
まず、製造する有機EL表示装置について説明する。図4(a)は有機EL表示装置60の全体図、図4(b)は1画素の断面構造を表している。
<Example of Manufacturing Method of Electronic Device>
Next, an example of an electronic device manufacturing method using the film forming apparatus of the present embodiment will be described. Hereinafter, as an example of an electronic device, a configuration and a manufacturing method of an organic EL display device will be exemplified.
First, an organic EL display device to be manufactured will be described. 4A shows an overall view of the organic EL display device 60, and FIG. 4B shows a cross-sectional structure of one pixel.
図4(a)に示すように、有機EL表示装置60の表示領域61には、発光素子を複数備える画素62がマトリクス状に複数配置されている。詳細は後で説明するが、発光素子のそれぞれは、一対の電極に挟まれた有機層を備えた構造を有している。なお、ここでいう画素とは、表示領域61において所望の色の表示を可能とする最小単位を指している。本実施例にかかる有機EL表示装置の場合、互いに異なる発光を示す第1発光素子62R、第2発光素子62G、第3発光素子62Bの組合せにより画素62が構成されている。画素62は、赤色発光素子と緑色発光素子と青色発光素子の組合せで構成されることが多いが、黄色発光素子とシアン発光素子と白色発光素子の組み合わせでもよく、少なくとも1色以上であれば特に制限されるものではない。 As shown in FIG. 4A, in the display area 61 of the organic EL display device 60, a plurality of pixels 62 each including a plurality of light emitting elements are arranged in a matrix. Although details will be described later, each of the light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. Here, the pixel refers to a minimum unit that enables display of a desired color in the display area 61. In the case of the organic EL display device according to this example, the pixel 62 is configured by a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B that emit different light. The pixel 62 is often composed of a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element. It is not limited.
図4(b)は、図4(a)のA−B線における部分断面模式図である。画素62は、基板63上に、第1電極(陽極)64と、正孔輸送層65と、発光層66R,66G,66Bのいずれかと、電子輸送層67と、第2電極(陰極)68と、を備える有機EL素子を有している。これらのうち、正孔輸送層65、発光層66R,66G,66B、電子輸送層67が有機層に当たる。また、本実施形態では、発光層66Rは赤色を発する有機EL層、発光層66Gは緑色を発する有機EL層、発光層66Bは青色を発する有機EL層である。発光層66R,66G,66Bは、それぞれ赤色、緑色、青色を発する発光素子(有機EL素子と記述する場合もある)に対応するパターンに形成されている。また、第1電極64は、発光素子ごとに分離して形成されている。正孔輸送層65と電子輸送層67と第2電極68は、複数の発光素子62R,66G,66Bと共通で形成されていてもよいし、発光素子毎に形成されていてもよい。なお、第1電極64と第2電極68とが異物によってショートするのを防ぐために、第1電極64間に絶縁層69が設けられている。さらに、有機EL層は水分や酸素によって劣化するため、水分や酸素から有機EL素子を保護するための保護層70が設けられている。 FIG. 4B is a schematic partial cross-sectional view taken along the line AB of FIG. The pixel 62 includes a first electrode (anode) 64, a hole transport layer 65, one of the light emitting layers 66 </ b> R, 66 </ b> G, and 66 </ b> B, an electron transport layer 67, and a second electrode (cathode) 68 on a substrate 63. And an organic EL element. Among these, the hole transport layer 65, the light emitting layers 66R, 66G, and 66B, and the electron transport layer 67 correspond to the organic layer. In the present embodiment, the light emitting layer 66R is an organic EL layer that emits red, the light emitting layer 66G is an organic EL layer that emits green, and the light emitting layer 66B is an organic EL layer that emits blue. The light emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light emitting elements that emit red, green, and blue (sometimes referred to as organic EL elements). The first electrode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the second electrode 68 may be formed in common with the plurality of light emitting elements 62R, 66G, and 66B, or may be formed for each light emitting element. Note that an insulating layer 69 is provided between the first electrodes 64 in order to prevent the first electrode 64 and the second electrode 68 from being short-circuited by foreign matter. Furthermore, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.
有機EL層を発光素子単位に形成するためには、マスクを介して成膜する方法が用いられる。近年、表示装置の高精細化が進んでおり、有機EL層の形成には開口の幅が数十μmのマスクが用いられる。このようなマスクを用いた成膜の場合、マスクが成膜中に蒸発源から受熱して熱変形するとマスクと基板との位置がずれてしまい、基板上に形成される薄膜のパターンが所望の位置からずれて形成されてしまう。そこで、これら有機EL層の成膜には本発明にかかる成膜装置(真空蒸着装置)が好適に用いられる。 In order to form the organic EL layer in units of light emitting elements, a method of forming a film through a mask is used. In recent years, display devices have been improved in definition, and a mask having an opening width of several tens of μm is used for forming an organic EL layer. In the case of film formation using such a mask, if the mask receives heat from the evaporation source during film formation and is thermally deformed, the position of the mask and the substrate is shifted, and the pattern of the thin film formed on the substrate is desired. It will be formed out of position. Therefore, a film forming apparatus (vacuum evaporation apparatus) according to the present invention is suitably used for forming these organic EL layers.
次に、有機EL表示装置の製造方法の例について具体的に説明する。 Next, an example of a method for manufacturing an organic EL display device will be specifically described.
まず、有機EL表示装置を駆動するための回路(不図示)および第1電極64が形成された基板63を準備する。
第1電極64が形成された基板63の上にアクリル樹脂をスピンコートで形成し、アクリル樹脂をリソグラフィ法により、第1電極64が形成された部分に開口が形成されるようにパターニングし絶縁層69を形成する。この開口部が、発光素子が実際に発光する発光領域に相当する。
絶縁層69がパターニングされた基板63を第1の成膜装置に搬入し、基板保持ユニットにて基板を保持し、正孔輸送層65を、表示領域の第1電極64の上に共通する層として成膜する。正孔輸送層65は真空蒸着により成膜される。実際には正孔輸送層65は表示領域61よりも大きなサイズに形成されるため、高精細なマスクは不要である。
First, a circuit (not shown) for driving the organic EL display device and a substrate 63 on which the first electrode 64 is formed are prepared.
An acrylic resin is formed by spin coating on the substrate 63 on which the first electrode 64 is formed, and the acrylic resin is patterned by a lithography method so that an opening is formed in a portion where the first electrode 64 is formed. 69 is formed. This opening corresponds to a light emitting region where the light emitting element actually emits light.
The substrate 63 patterned with the insulating layer 69 is carried into the first film formation apparatus, the substrate is held by the substrate holding unit, and the hole transport layer 65 is a common layer on the first electrode 64 in the display region. As a film formation. The hole transport layer 65 is formed by vacuum deposition. Actually, since the hole transport layer 65 is formed in a size larger than the display region 61, a high-definition mask is not necessary.
次に、正孔輸送層65までが形成された基板63を第2の成膜装置に搬入し、基板保持ユニットにて保持する。基板とマスクとのアライメントを行い、基板をマスクの上に載置し、基板63の赤色を発する素子を配置する部分に、赤色を発する発光層66Rを成膜する。本例によれば、マスクと基板とを良好に重ね合わせることができ、高精度な成膜を行うことができる。
発光層66Rの成膜と同様に、第3の成膜装置により緑色を発する発光層66Gを成膜し、さらに第4の成膜装置により青色を発する発光層66Bを成膜する。発光層66R、66G、66Bの成膜が完了した後、第5の成膜装置により表示領域61の全体に電子輸送層67を成膜する。電子輸送層67は、3色の発光層66R、66G、66Bに共通の層として形成される。
電子輸送層67までが形成された基板をスパッタリング装置に移動し、第2電極68を成膜し、その後プラズマCVD装置に移動して保護層70を成膜して、有機EL表示装置60が完成する。
Next, the substrate 63 on which the hole transport layer 65 is formed is carried into the second film forming apparatus and held by the substrate holding unit. The substrate and the mask are aligned, the substrate is placed on the mask, and the light emitting layer 66R that emits red is formed on the portion of the substrate 63 where the element that emits red is disposed. According to this example, the mask and the substrate can be satisfactorily overlapped, and highly accurate film formation can be performed.
Similarly to the formation of the light emitting layer 66R, the light emitting layer 66G that emits green is formed by the third film forming apparatus, and the light emitting layer 66B that emits blue is formed by the fourth film forming apparatus. After the formation of the light emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed on the entire display region 61 by the fifth film formation apparatus. The electron transport layer 67 is formed as a layer common to the three-color light emitting layers 66R, 66G, and 66B.
The substrate on which the electron transport layer 67 has been formed is moved to the sputtering apparatus, the second electrode 68 is formed, and then the protective layer 70 is formed by moving to the plasma CVD apparatus, whereby the organic EL display device 60 is completed. To do.
絶縁層69がパターニングされた基板63を成膜装置に搬入してから保護層70の成膜が完了するまでは、水分や酸素を含む雰囲気にさらしてしまうと、有機EL材料からなる発光層が水分や酸素によって劣化してしまうおそれがある。従って、本例において、成膜装置間の基板の搬入搬出は、真空雰囲気または不活性ガス雰囲気の下で行われる。
このようにして得られた有機EL表示装置は、発光素子ごとに発光層が精度よく形成される。従って、上記製造方法を用いれば、発光層の位置ずれに起因する有機EL表示装置の不良の発生を抑制することができる。
From when the substrate 63 with the insulating layer 69 patterned is carried into the film formation apparatus until the film formation of the protective layer 70 is completed, if the light emitting layer made of an organic EL material is exposed to an atmosphere containing moisture or oxygen, There is a risk of deterioration due to moisture and oxygen. Therefore, in this example, the carrying-in / out of the substrate between the film forming apparatuses is performed in a vacuum atmosphere or an inert gas atmosphere.
In the organic EL display device thus obtained, a light emitting layer is accurately formed for each light emitting element. Therefore, if the manufacturing method is used, it is possible to suppress the occurrence of defects in the organic EL display device due to the displacement of the light emitting layer.
<基板搬送機構(基板搬送方法)>
図5〜図9を参照して、本実施例の特徴的構成について説明する。本実施例は、搬送ロボット119が基板10を各成膜室111、112の成膜装置における真空チャンバ200内部の基板保持ユニット210へ受け渡す際の、基板10の受け渡し方に特徴を有する。より具体的には、搬送ロボット119が担持する基板10を、基板保持ユニット210の支持具300と押圧具302の間に導入し、押圧具302と支持具300とで挟持する状態とするまでの、基板10の受け渡し方である。
<Substrate transport mechanism (substrate transport method)>
A characteristic configuration of the present embodiment will be described with reference to FIGS. The present embodiment is characterized in how the substrate 10 is transferred when the transfer robot 119 transfers the substrate 10 to the substrate holding unit 210 in the vacuum chamber 200 in the film forming apparatuses 111 and 112. More specifically, the substrate 10 carried by the transfer robot 119 is introduced between the support tool 300 and the pressing tool 302 of the substrate holding unit 210 and is held between the pressing tool 302 and the support tool 300. This is how the substrate 10 is delivered.
(ロボットアームの構成)
図5を参照して、搬送ロボット119の構成について説明する。図5(a)は、搬送ロボット119の模式的平面図である。図5(b)は、搬送ロボット119の模式的側面図である。なお、ここで説明する搬送ロボットの構成(ロボットアーム、ロボットハンドの構成)はあくまで一例であり、かかる構成に限定されるものではない。
搬送ロボット119は、概略、基板10を担持するためのロボットハンド90と、ロボットハンド90をXYZ直交座標の任意の位置へ自在に移動させるためのロボットアーム91と、からなる。
(Robot arm configuration)
The configuration of the transfer robot 119 will be described with reference to FIG. FIG. 5A is a schematic plan view of the transfer robot 119. FIG. 5B is a schematic side view of the transfer robot 119. Note that the configuration of the transfer robot (the configuration of the robot arm and the robot hand) described here is merely an example, and is not limited to such a configuration.
The transfer robot 119 generally includes a robot hand 90 for carrying the substrate 10 and a robot arm 91 for freely moving the robot hand 90 to an arbitrary position in XYZ orthogonal coordinates.
ロボットアーム91は、搬送室110の設置面に固定設置されるベース910と、ベース910に対してジョイント920、921、922を介して順次連結されたアーム911、912、913と、とを有する。第1アーム911は、ベース910に対し、第1ジョイント920を介して、設置面に垂直な方向(Z方向)に延びる回転軸を中心に回転可能に連結されている。第2アーム912は、第1アーム911に対して第2ジョイント921を介して、第3アーム913に対して第3ジョイント922を介して、それぞれ、設置面に垂直な方向(Z方向)に延びる回転軸を中心に回転可能に連結されている。第3アーム913の先端には、ロボットハンド90が連結されている。各アーム911〜913の回転の組み合わせにより、ロボットハンド90の水平位置(XY座標)を任意に変位させることができる。
また、第1アーム911は、ベース910に対して、ジョイント920に沿った方向に昇降移動可能に構成されている(図中矢印Z1方向)。第1アーム911の昇降によって第2アーム912及び第3アーム913も昇降することで、ロボットハンド90の高さを変化させ、基板10の高さを変化させることができる(図中矢印Z2方向)。
The robot arm 91 includes a base 910 fixedly installed on the installation surface of the transfer chamber 110, and arms 911, 912, 913 sequentially connected to the base 910 via joints 920, 921, 922. The first arm 911 is connected to the base 910 via the first joint 920 so as to be rotatable about a rotation axis extending in a direction perpendicular to the installation surface (Z direction). The second arm 912 extends in the direction perpendicular to the installation surface (Z direction) via the second joint 921 with respect to the first arm 911 and via the third joint 922 with respect to the third arm 913, respectively. It is connected so as to be rotatable about a rotation axis. A robot hand 90 is connected to the tip of the third arm 913. The horizontal position (XY coordinates) of the robot hand 90 can be arbitrarily displaced by a combination of rotations of the arms 911 to 913.
The first arm 911 is configured to be movable up and down in the direction along the joint 920 with respect to the base 910 (in the direction of arrow Z1 in the figure). By raising and lowering the first arm 911, the second arm 912 and the third arm 913 are also raised and lowered, thereby changing the height of the robot hand 90 and changing the height of the substrate 10 (in the direction of arrow Z2 in the figure). .
ロボットハンド90は、第3アーム913の先端から延びるスパインロッド901と、スパインロッド901の両側面からそれぞれスパインロッド901に対して直交する方向に延びる複数のリブロッド902と、を有している。リブロッド902の上面には、基板10の下面を支持するためのパッド903(第1支持部)が複数設けられている。パッド903は、基板表面を傷つけずに支持できるようにシリコーンゴム等の弾性部材で構成され、基板10のたわみを考慮した配置で複数設けられている。 The robot hand 90 includes a spine rod 901 extending from the tip of the third arm 913 and a plurality of rib rods 902 extending from both side surfaces of the spine rod 901 in a direction perpendicular to the spine rod 901. A plurality of pads 903 (first support portions) for supporting the lower surface of the substrate 10 are provided on the upper surface of the rib rod 902. The pads 903 are made of an elastic member such as silicone rubber so as to be supported without damaging the substrate surface, and a plurality of pads 903 are provided in consideration of the deflection of the substrate 10.
(基板の受け渡し)
図6〜図8を参照して、搬送ロボット119から基板保持ユニット210への基板10の受け渡しについて説明する。ここで、基板10をロボットハンド90から基板保持ユニ
ット210へ受け渡すべく、ロボットハンド90(パッド903)と基板保持ユニット210(支持具300、押圧具302)との相対位置を制御する構成、すなわち、搬送ロボット119(ロボットアーム91)や制御部270などが、本発明の制御部に相当する。
(Delivery of board)
The transfer of the substrate 10 from the transfer robot 119 to the substrate holding unit 210 will be described with reference to FIGS. Here, in order to transfer the substrate 10 from the robot hand 90 to the substrate holding unit 210, a configuration for controlling the relative position between the robot hand 90 (pad 903) and the substrate holding unit 210 (supporting tool 300, pressing tool 302), that is, The transfer robot 119 (robot arm 91), the control unit 270, and the like correspond to the control unit of the present invention.
基板10の受け渡しは、概略、基板10を支持しているロボットハンド90(パッド903)を、支持具300よりも高い位置から低い位置へ相対移動させて、基板10を支持する構成がロボットハンド90から支持具300へ切り替わるようにすることで行われる。なお、本実施例では、静止した基板保持ユニット210に対してロボットハンド90が移動することによって両者の相対位置を変化させる構成となっているが、かかる構成に限定されない。すなわち、ロボットハンド90は移動せず基板保持ユニット210が移動することによって、あるいは両者ともに移動することによって、両者の相対位置を変化させる(相対移動する)構成としてもよい。 In general, the substrate 10 is transferred by a configuration in which the robot hand 90 (pad 903) supporting the substrate 10 is relatively moved from a position higher than the support 300 to a lower position to support the substrate 10 so that the robot hand 90 is supported. This is done by switching from the support tool 300 to the support tool 300. In this embodiment, the robot hand 90 moves relative to the stationary substrate holding unit 210 to change the relative position between the two, but the present invention is not limited to this configuration. In other words, the robot hand 90 may be configured to change (relatively move) the relative positions of the substrate holding unit 210 by moving without moving, or by moving both.
図6は、基板の受け渡しの様子を時系列で示した模式的平面図である。図6(a)は、基板10の搬入前、図6(b)は、基板10の搬入後、挟持機構による基板10の挟持前、図6(c)は、基板10を挟持機構で挟持した後、のそれぞれの様子を示している。
図7は、基板の受け渡しの様子を順次時系列で示した模式的側面である。図7(a)は、ロボットハンド90が基板保持ユニット210の内部にアクセスした直後(基板10を支持具300に受け渡す前)の様子を示している(第1相対位置)。図7(b)は、搬送ロボット90が、パッド903が隣接する支持具300の間に位置する高さまで下降し、下降動作を一時停止した状態を示している(第2相対位置)。図7(c)は、押圧具302が下降して基板10の上面を押圧し、支持具300との間で基板10を挟持した状態を示している(第3相対位置)。図7(d)は、ロボットハンド90(パッド903)が基板10を支持する位置から離れた(退避した)状態を示している(第4相対位置)。
図8は、上述した、搬送ロボット119によって基板10を基板保持ユニット210へ搬送する基板搬送フローを含めた、成膜プロセスのフローチャートである。
FIG. 6 is a schematic plan view showing the state of substrate delivery in time series. 6A shows a state before the substrate 10 is carried in, FIG. 6B shows a state after the substrate 10 is carried in and before the holding of the substrate 10 by the holding mechanism, and FIG. 6C shows that the substrate 10 is held by the holding mechanism. Later, each state is shown.
FIG. 7 is a schematic side view showing how the substrates are transferred in time series. FIG. 7A shows a state immediately after the robot hand 90 accesses the inside of the substrate holding unit 210 (before the substrate 10 is transferred to the support 300) (first relative position). FIG. 7B shows a state in which the transport robot 90 has been lowered to a height at which the pad 903 is positioned between the adjacent support members 300, and the lowering operation has been temporarily stopped (second relative position). FIG. 7C shows a state in which the pressing tool 302 is lowered to press the upper surface of the substrate 10 and the substrate 10 is held between the supporting tool 300 (third relative position). FIG. 7D shows a state in which the robot hand 90 (pad 903) is separated (retracted) from the position where the robot 10 is supported (fourth relative position).
FIG. 8 is a flowchart of the film forming process including the substrate transfer flow in which the transfer robot 119 transfers the substrate 10 to the substrate holding unit 210 described above.
まず、制御部270は、搬送ロボット119(ロボットアーム91)を操作して、基板10を担持したロボットハンド90を真空チャンバ200の内部に導入する(図8、S101)。図6(a)、(b)、図7(a)に示すように、ロボットハンド90は、基板保持ユニット210に対して、支持具300(第2支持部)と押圧具302(押圧部)の間の所定の高さ、すなわち支持具300よりも上方、押圧具302(押圧部)よりも下方の高さに挿入される。基板10は、ロボットハンド90のパッド903のみで支持された状態である。 First, the control unit 270 operates the transfer robot 119 (robot arm 91) to introduce the robot hand 90 carrying the substrate 10 into the vacuum chamber 200 (FIG. 8, S101). As shown in FIGS. 6A, 6 </ b> B, and 7 </ b> A, the robot hand 90 has a support tool 300 (second support part) and a pressing tool 302 (pressing part) with respect to the substrate holding unit 210. Is inserted at a predetermined height, that is, above the support tool 300 and below the pressing tool 302 (pressing portion). The substrate 10 is supported by only the pad 903 of the robot hand 90.
次に、制御部270は、受渡工程として、搬送ロボット119を操作して、ロボットハンド90の下降を開始する(図8、S102)。そして、図7(b)に示すように、ロボットハンド90は、パッド903の基板支持面(上面)が、支持具300の基板支持面(上面)と略同じ高さとなる位置まで下降し、その位置で停止する(図8、S103)。これにより、基板10は、パッド903と支持具300の両支持部によって支持される状態となる。この支持状態により、パッド903のみで支持されていたときに発生していた基板10のたわみが解消あるいは低減される。 Next, as a delivery process, the control unit 270 operates the transport robot 119 to start the lowering of the robot hand 90 (FIG. 8, S102). Then, as shown in FIG. 7B, the robot hand 90 moves down to a position where the substrate support surface (upper surface) of the pad 903 is substantially the same height as the substrate support surface (upper surface) of the support 300, It stops at the position (FIG. 8, S103). As a result, the substrate 10 is supported by both the support portions of the pad 903 and the support tool 300. This support state eliminates or reduces the deflection of the substrate 10 that occurs when the pad 903 alone is supported.
次に、制御部270は、挟持工程として、押圧具302の昇降機構(クランプZアクチュエータ251)を制御して、押圧具302を基板10上面を押圧する位置まで下降させる(図8、S104)。図6(c)、図7(c)に示すように、非押圧位置にあった押圧具302が押圧位置まで下降し、パッド903と支持具300の両支持部に支持されている基板10の上面を支持具300との間で挟むように押圧する。これにより、基板10は、支持具300と押圧具302とからなる挟持機構により基板保持ユニット210に対して挟持された状態となる。このように、パッド903と支持具300の両支持部で支持し
た状態で基板10を挟持することにより、たわみのない、あるいはたわみの少ない状態で基板10を挟持することができる。
Next, as a clamping process, the control unit 270 controls the lifting mechanism (clamp Z actuator 251) of the pressing tool 302 to lower the pressing tool 302 to a position where the upper surface of the substrate 10 is pressed (S104 in FIG. 8). As shown in FIGS. 6C and 7C, the pressing tool 302 that was in the non-pressing position is lowered to the pressing position, and the substrate 10 that is supported by both the support portions of the pad 903 and the supporting tool 300. The upper surface is pressed so as to be sandwiched between the support tool 300. As a result, the substrate 10 is held by the substrate holding unit 210 by the holding mechanism including the support tool 300 and the pressing tool 302. In this way, by sandwiching the substrate 10 in a state of being supported by both the support portions of the pad 903 and the support tool 300, the substrate 10 can be sandwiched with little or no deflection.
次に、制御部270は、退避工程として、搬送ロボット119を操作して、ロボットハンド90の下降動作を再開し(図8、S105)、所定の高さまで下降したら真空チャンバ200から退室させる(図8、S106)。図7(d)に示すように、ロボットハンド90はパッド903が支持具300よりも低い位置すなわち基板10を支持しない位置まで下降して、基板10の受け渡しが終了し、真空チャンバ200から退室する。その後、載置工程として、上述した成膜プロセスにおけるアライメント工程が開始される(図8、S107)。すなわち、基板10に成膜するための蒸着処理を施すためのマスク220上に基板10を載置する載置工程を、マスク220上面(基板載置面)に対する基板10の載置位置が所定の載置位置となるまで繰り返す。アライメント工程が終了すると、基板10に対して蒸着源240(供給源)からマスク220を介して蒸着物質を供給して蒸着処理を施す蒸着工程等が開始される(図8、S108)。以後の工程は上述した通りである。 Next, the control unit 270 operates the transfer robot 119 as a retreating process to restart the lowering operation of the robot hand 90 (FIG. 8, S105), and when the control unit 270 is lowered to a predetermined height, the controller 270 leaves the vacuum chamber 200 (FIG. 8). 8, S106). As shown in FIG. 7D, the robot hand 90 moves down to a position where the pad 903 is lower than the support 300, that is, a position where the substrate 10 is not supported, the delivery of the substrate 10 is completed, and the robot hand 90 leaves the vacuum chamber 200. . Thereafter, the alignment step in the above-described film forming process is started as a placing step (FIG. 8, S107). That is, in the placing step of placing the substrate 10 on the mask 220 for performing a vapor deposition process for forming a film on the substrate 10, the placement position of the substrate 10 with respect to the upper surface of the mask 220 (substrate placing surface) is predetermined. Repeat until the mounting position is reached. When the alignment process is completed, a vapor deposition process for supplying a vapor deposition material to the substrate 10 from the vapor deposition source 240 (supply source) via the mask 220 and performing a vapor deposition process is started (FIG. 8, S108). Subsequent steps are as described above.
<本実施例の優れた点>
本実施例は、上述したように、支持具300と押圧具302とで基板10を挟持する際に、ロボットハンド90(パッド903)による基板10の支持状態を維持することを特徴とする。かかる特徴による効果を、比較例と対比して説明する。図9は、比較例の基板搬送機構(基板搬送方法)を説明する模式図である。図9(a)は、基板10がロボットハンド90から支持具300へ受け渡された後であって、押圧具302が押圧位置まで下降していない状態(非挟持状態)、図9(b)は、押圧具302が押圧位置まで下降した状態(挟持状態)をそれぞれ示している。
<Excellent points of this embodiment>
As described above, this embodiment is characterized in that the support state of the substrate 10 by the robot hand 90 (pad 903) is maintained when the substrate 10 is sandwiched between the support tool 300 and the pressing tool 302. The effect of this feature will be described in comparison with a comparative example. FIG. 9 is a schematic diagram illustrating a substrate transport mechanism (substrate transport method) of a comparative example. FIG. 9A shows a state after the substrate 10 is transferred from the robot hand 90 to the support tool 300, and the pressing tool 302 is not lowered to the pressing position (non-clamping state). FIG. These respectively show the state where the pressing tool 302 is lowered to the pressing position (clamping state).
比較例は、ロボットハンド90の基板受渡動作において、ロボットハンド90を支持具300に対して、支持具300よりも高い位置から低い位置へ相対移動させる際に、ロボットハンド90の下降動作を止めない構成となっている。したがって、図9(a)に示すように、基板10がロボットハンド90(パッド903)から支持具300へ受け渡された後、押圧具302が押圧位置まで下降する前において、基板10が支持具300のみで支持される状態が生じる。そのため、隣接する支持具300間において基板10がたわみを生じる場合がある。この状態のまま押圧具302が基板10上面を押圧して基板10を支持具300との間で挟持すると、図9(b)に示すように、基板10はたわみが生じた状態で挟持されることとなる。このようなたわみ状態で挟持を行うと、うまく挟持できない場合が生じたり、挟持の具合にばらつきが生じてしまう。また、上記のようなたわみが生じたままの挟持状態において、以後のアライメント工程へ進むと、アライメント工程における最初の載置動作(第1アライメント)における載置位置のばらつきが大きくなってしまうおそれがある。その結果、アライメント工程における載置動作の繰り返し回数が増えてしまう可能性がある。 In the comparative example, in the substrate delivery operation of the robot hand 90, when the robot hand 90 is moved relative to the support tool 300 from a position higher than the support tool 300 to a lower position, the lowering operation of the robot hand 90 is not stopped. It has a configuration. Accordingly, as shown in FIG. 9A, after the substrate 10 is transferred from the robot hand 90 (pad 903) to the support tool 300, the substrate 10 is supported by the support tool 300 before the pressing tool 302 is lowered to the pressing position. A state where only 300 is supported occurs. For this reason, the substrate 10 may bend between the adjacent supports 300. When the pressing tool 302 presses the upper surface of the substrate 10 and clamps the substrate 10 with the support tool 300 in this state, the substrate 10 is clamped in a state where deflection occurs as shown in FIG. 9B. It will be. When pinching is performed in such a bent state, there are cases where pinching cannot be performed well, and variations in pinching state occur. Further, in the clamping state with the above-described deflection, if the process proceeds to the subsequent alignment process, there is a possibility that the variation in the mounting position in the first mounting operation (first alignment) in the alignment process becomes large. is there. As a result, there is a possibility that the number of repetitions of the mounting operation in the alignment process increases.
これに対し、本実施例によれば、基板10が支持具300と押圧具302とで挟持される状態となるまで、ロボットハンド90が基板を支持した状態を維持することで、図7(d)に示すように、たわみのない、あるいは少ない状態で基板10を挟持することができる。挟持動作を安定して行うことができ、また挟持状態のばらつきを少なくすることができる。ロボットハンド90の動作を一時停止するため基板搬送工程におけるタクトタイムは増えることになるが、その後のアライメント工程において、第1アライメントにおける基板10のマスク220に対する載置位置のばらつきが抑制されることになる。したがって、基板載置工程及びその後の蒸着工程等を含めた成膜プロセス全体のタクトタイムは低減されることになる。 On the other hand, according to the present embodiment, the robot hand 90 supports the substrate until the substrate 10 is sandwiched between the support tool 300 and the pressing tool 302, whereby FIG. ), The substrate 10 can be sandwiched with little or no deflection. The clamping operation can be performed stably, and variations in the clamping state can be reduced. Since the operation of the robot hand 90 is temporarily stopped, the tact time in the substrate transport process increases, but in the subsequent alignment process, variation in the placement position of the substrate 10 with respect to the mask 220 in the first alignment is suppressed. Become. Accordingly, the tact time of the entire film forming process including the substrate placing process and the subsequent vapor deposition process is reduced.
また、本実施例によれば、ロボットハンド90の下降動作を停止して、基板10をパッド903と支持具300の両支持部で支持する静止状態を形成することで、パッド903のみで支持していたときに生じていた基板10のたわみを解消することが可能となる。 Further, according to the present embodiment, the descent operation of the robot hand 90 is stopped, and a stationary state in which the substrate 10 is supported by both the support portions of the pad 903 and the support 300 is formed, so that it is supported only by the pad 903. It is possible to eliminate the deflection of the substrate 10 that has occurred when the substrate was touched.
なお、本実施例では、ロボットハンド90の下降動作を一旦停止させる構成としているが、かかる構成に限定されない。例えば、ロボットハンド90の下降速度を減速して、押圧部303が基板10上面を押圧する状態となるまでパッド903が基板10下面を支える(たわみを抑える)状態を維持できるような低速度で下降動作を継続するようにしてもよい。 In this embodiment, the lowering operation of the robot hand 90 is temporarily stopped. However, the present invention is not limited to this configuration. For example, the lowering speed of the robot hand 90 is reduced, and the pad 903 is lowered at a low speed so that the pad 903 can support the lower surface of the substrate 10 (suppress deflection) until the pressing unit 303 presses the upper surface of the substrate 10. The operation may be continued.
10…基板、300…支持具(第2支持部)、302…押圧具(押圧部)、90…ロボットハンド、902…リブロッド(第1支持部)、903…パッド(第1支持部) DESCRIPTION OF SYMBOLS 10 ... Board | substrate, 300 ... Support tool (2nd support part), 302 ... Press tool (press part), 90 ... Robot hand, 902 ... Rib rod (1st support part), 903 ... Pad (1st support part)
Claims (20)
前記第1支持部と前記第2支持部と前記押圧部との相対位置を制御する制御部は、前記下面を前記第2支持部が支持する状態となってから前記押圧部が前記上面を押圧するまでの間、前記第1支持部を複数の前記第2支持部の間に位置させ、前記押圧部が前記上面を押圧した後に、前記第1支持部を前記低い位置へ相対移動させることを特徴とする基板搬送機構。 First support portion supporting the lower surface of the substrate, the relative movement passes between the plurality of the second support portion from a position higher than the plurality of second support portion to the position lower than the second support section Then, the second support portion supports the lower surface of the substrate, the upper surface of the substrate supported by the second support portion is pressed by the pressing portion, and the substrate is pressed against the second support portion and the second support portion. In the substrate transport mechanism sandwiched between
The control unit that controls the relative positions of the first support unit, the second support unit, and the pressing unit is configured so that the pressing unit presses the upper surface after the lower surface is supported by the second support unit. Until the first support portion is positioned between the plurality of second support portions, and after the pressing portion presses the upper surface, the first support portion is relatively moved to the lower position. A substrate transport mechanism.
前記第1支持部が前記第2支持部よりも高い位置にあり、前記押圧部が前記基板を押圧しない非押圧位置にある第1相対位置と、
前記第1支持部が複数の前記第2支持部との間に位置し、前記押圧部が前記非押圧位置にある第2相対位置と、
前記第1支持部が複数の前記第2支持部との間に位置し、前記押圧部が前記基板を押圧
する押圧位置にある第3相対位置と、
前記第1支持部が前記第2支持部よりも低い位置にあり、前記押圧部が前記押圧位置にある第4相対位置と、
に順次変化させることを特徴とする請求項1〜4のいずれか1項に記載の基板搬送機構。 The control unit determines the relative position,
A first relative position in which the first support portion is at a higher position than the second support portion, and the pressing portion is in a non-pressing position where the substrate is not pressed;
A second relative position in which the first support portion is positioned between the plurality of second support portions, and the pressing portion is in the non-pressing position;
A third relative position in which the first support portion is positioned between the plurality of second support portions, and the pressing portion is in a pressing position for pressing the substrate;
A fourth relative position in which the first support portion is at a position lower than the second support portion, and the pressing portion is in the pressing position;
The substrate transport mechanism according to claim 1, wherein the substrate transport mechanism is sequentially changed.
前記基板を載置するための載置体と、
を有し、
前記制御部は、前記第2支持部及び前記押圧部と前記載置体との間の相対位置を制御して、前記第2支持部と前記押圧部によって挟持した前記基板を、前記載置体上に載置することを特徴とする基板載置機構。 The substrate transfer mechanism according to any one of claims 1 to 6,
A mounting body for mounting the substrate;
Have
The control unit controls a relative position between the second support unit and the pressing unit and the mounting body, and the substrate sandwiched between the second support unit and the pressing unit is placed on the mounting body. A substrate placement mechanism characterized by being placed on top.
前記マスクに載置された前記基板に対して前記マスクを介して蒸着物質を供給する供給源と、
前記基板載置機構と、前記供給源と、を収容するチャンバと、
を有することを特徴とする成膜装置。 The substrate mounting mechanism according to claim 7 or 8, comprising a mask for performing a vapor deposition process for forming a film on the substrate as the mounting body.
A supply source for supplying a deposition material to the substrate placed on the mask through the mask;
A chamber for accommodating the substrate mounting mechanism and the supply source;
A film forming apparatus comprising:
基板の下面を支持した第1支持部を、複数の第2支持部よりも高い位置から、複数の前記第2支持部の間の位置へ相対移動させる受渡工程と、
前記第1支持部が複数の前記第2支持部の間に位置している間に、前記基板を前記第2支持部と押圧部との間で挟持する状態とすべく前記押圧部で前記基板の上面を押圧させる挟持工程と、
前記基板が前記第2支持部と前記押圧部とで挟持されたら、前記第1支持部を前記第2支持部よりも低い位置へ相対移動させる退避工程と、
を含むことを特徴とする基板搬送方法。 A substrate transfer method,
The first support portion supporting the lower surface of the substrate, from a higher position than the plurality of second supporting portions, a delivery step for relatively moving the position between the plurality of the second supporting portion,
While the first support portion is positioned between the plurality of second support portions, the substrate is held by the pressing portion so that the substrate is held between the second support portion and the pressing portion. A clamping step of pressing the upper surface of
When the substrate is sandwiched between the second support portion and the pressing portion, a retreating step of relatively moving the first support portion to a position lower than the second support portion ;
The board | substrate conveyance method characterized by including.
前記挟持工程によって前記第2支持部と前記押圧部によって挟持した前記基板を、載置体上に載置する載置工程と、
を含むことを特徴とする基板載置方法。 Each process in the board | substrate conveyance method of any one of Claims 10-14,
A placement step of placing the substrate sandwiched between the second support portion and the pressing portion by the sandwiching step on a placement body;
A substrate mounting method comprising:
前記載置工程として、前記載置体としての、前記基板に成膜するための蒸着処理を施すためのマスク上に、前記基板を載置する載置工程と、
前記マスクに載置された前記基板に対して前記マスクを介して蒸着物質を供給して前記蒸着処理を施す蒸着工程と、
を含むことを特徴とする成膜方法。 Each process in the substrate mounting method according to claim 15 or 16,
As the placement step, a placement step of placing the substrate on a mask for performing a vapor deposition process for forming a film on the substrate as the placement body;
A deposition process of supplying a deposition material to the substrate placed on the mask through the mask and performing the deposition process;
A film forming method comprising:
請求項17に記載の成膜方法により前記少なくとも一方の膜が形成されることを特徴とする電子デバイスの製造方法。 A method of manufacturing an electronic device having at least one of an organic film and a metal film formed on a substrate,
18. The method of manufacturing an electronic device, wherein the at least one film is formed by the film forming method according to claim 17.
前記基板に成膜する工程と、
を含むことを特徴とする電子デバイスの製造方法。 Each process in the substrate mounting method according to claim 15 or 16,
Forming a film on the substrate;
The manufacturing method of the electronic device characterized by the above-mentioned.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017101235A JP6468540B2 (en) | 2017-05-22 | 2017-05-22 | Substrate transport mechanism, substrate mounting mechanism, film forming apparatus, and methods thereof |
| KR1020170179129A KR101870586B1 (en) | 2017-05-22 | 2017-12-26 | Substrate conveyance device, substrate mounting device, film formation device and film formation method |
| CN201810485118.6A CN108677158B (en) | 2017-05-22 | 2018-05-21 | Substrate transfer mechanism, substrate mounting mechanism, film forming apparatus and method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017101235A JP6468540B2 (en) | 2017-05-22 | 2017-05-22 | Substrate transport mechanism, substrate mounting mechanism, film forming apparatus, and methods thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2018197362A JP2018197362A (en) | 2018-12-13 |
| JP6468540B2 true JP6468540B2 (en) | 2019-02-13 |
Family
ID=62768343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017101235A Active JP6468540B2 (en) | 2017-05-22 | 2017-05-22 | Substrate transport mechanism, substrate mounting mechanism, film forming apparatus, and methods thereof |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6468540B2 (en) |
| KR (1) | KR101870586B1 (en) |
| CN (1) | CN108677158B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10916464B1 (en) | 2019-07-26 | 2021-02-09 | Applied Materials, Inc. | Method of pre aligning carrier, wafer and carrier-wafer combination for throughput efficiency |
| US11189516B2 (en) | 2019-05-24 | 2021-11-30 | Applied Materials, Inc. | Method for mask and substrate alignment |
| US11414740B2 (en) | 2019-06-10 | 2022-08-16 | Applied Materials, Inc. | Processing system for forming layers |
| US11538706B2 (en) | 2019-05-24 | 2022-12-27 | Applied Materials, Inc. | System and method for aligning a mask with a substrate |
| US11631813B2 (en) | 2019-03-15 | 2023-04-18 | Applied Materials, Inc. | Deposition mask and methods of manufacturing and using a deposition mask |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7269000B2 (en) * | 2018-12-26 | 2023-05-08 | キヤノントッキ株式会社 | Substrate mounting method, film forming method, film forming apparatus, and organic EL panel manufacturing system |
| EP3955332A4 (en) * | 2019-04-10 | 2023-07-12 | LG Electronics Inc. | Secondary battery cell stacking device and manufacturing system comprising same |
| KR102125677B1 (en) * | 2019-06-27 | 2020-06-24 | 세메스 주식회사 | Method for processing substrate |
| KR102871998B1 (en) * | 2019-11-04 | 2025-10-16 | 캐논 톡키 가부시키가이샤 | Apparatus for forming film, and method for forming film |
| CN116635199A (en) * | 2020-12-02 | 2023-08-22 | 村田机械株式会社 | Conveying system |
| JP7344236B2 (en) * | 2021-02-08 | 2023-09-13 | キヤノントッキ株式会社 | Transport device, film forming device and control method |
| JP7649693B2 (en) * | 2021-05-27 | 2025-03-21 | キヤノントッキ株式会社 | Substrate carrier, deposition system, and method for manufacturing electronic device |
| CN115692237B (en) * | 2021-07-21 | 2025-09-12 | 志圣科技(广州)有限公司 | Substrate leveling device and leveling fixture |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3940823B2 (en) * | 1994-12-26 | 2007-07-04 | 株式会社ニコン | Stage device and control method thereof |
| JP2005075663A (en) * | 2003-08-29 | 2005-03-24 | Hitachi Kiden Kogyo Ltd | Substrate mount |
| JP5052753B2 (en) * | 2005-02-16 | 2012-10-17 | 芝浦メカトロニクス株式会社 | Substrate reversing apparatus and substrate manufacturing apparatus |
| JP4609757B2 (en) * | 2005-02-23 | 2011-01-12 | 三井造船株式会社 | Substrate mounting method in film forming apparatus |
| WO2007026852A1 (en) * | 2005-08-29 | 2007-03-08 | Ebara Corporation | Substrate processing unit, substrate transfer method, substrate cleansing process unit, and substrate plating apparatus |
| JP4773834B2 (en) * | 2006-02-03 | 2011-09-14 | キヤノン株式会社 | Mask film forming method and mask film forming apparatus |
| JP2008251754A (en) * | 2007-03-29 | 2008-10-16 | Nikon Corp | Substrate transport method and apparatus, and exposure method and apparatus |
| KR101517020B1 (en) | 2008-05-15 | 2015-05-04 | 삼성디스플레이 주식회사 | Apparatus and method for fabricating Organic Light Emitting Diode Display Device |
| WO2010106958A1 (en) * | 2009-03-18 | 2010-09-23 | 株式会社アルバック | Positioning method and vapor deposition method |
| JP5206528B2 (en) * | 2009-03-19 | 2013-06-12 | トヨタ自動車株式会社 | Work conveying device and work conveying method |
| JP2011073875A (en) * | 2009-10-02 | 2011-04-14 | Sharp Corp | Conveying method |
| CN102741993B (en) * | 2009-12-16 | 2016-06-22 | 株式会社尼康 | Supporting member for substrate, base board delivery device, substrate transfer method adopted therein, exposure device and manufacturing method |
| JP2011125967A (en) * | 2009-12-18 | 2011-06-30 | Hitachi High-Tech Control Systems Corp | Hand for wafer conveying robot, wafer conveying robot, and wafer conveying device |
| JP5079114B2 (en) * | 2010-03-30 | 2012-11-21 | 住友化学株式会社 | Substrate transport mechanism and substrate support device in polarizing film laminating apparatus |
| WO2011136075A1 (en) * | 2010-04-28 | 2011-11-03 | 株式会社アルバック | Vacuum processing device, method for moving substrate and alignment mask, alignment method, and film forming method |
| JP2012207263A (en) * | 2011-03-29 | 2012-10-25 | Hitachi High-Technologies Corp | Vapor deposition method, and vapor deposition apparatus |
| SG10201605873QA (en) * | 2011-07-19 | 2016-09-29 | Ebara Corp | Plating apparatus and plating method |
| CN203712702U (en) * | 2014-02-12 | 2014-07-16 | 昆山龙腾光电有限公司 | Manipulator arm for carrying glass substrate |
| JP6417916B2 (en) * | 2014-12-15 | 2018-11-07 | 東京エレクトロン株式会社 | Substrate transport method, substrate processing apparatus, and storage medium |
-
2017
- 2017-05-22 JP JP2017101235A patent/JP6468540B2/en active Active
- 2017-12-26 KR KR1020170179129A patent/KR101870586B1/en active Active
-
2018
- 2018-05-21 CN CN201810485118.6A patent/CN108677158B/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11631813B2 (en) | 2019-03-15 | 2023-04-18 | Applied Materials, Inc. | Deposition mask and methods of manufacturing and using a deposition mask |
| US11189516B2 (en) | 2019-05-24 | 2021-11-30 | Applied Materials, Inc. | Method for mask and substrate alignment |
| US11538706B2 (en) | 2019-05-24 | 2022-12-27 | Applied Materials, Inc. | System and method for aligning a mask with a substrate |
| US11414740B2 (en) | 2019-06-10 | 2022-08-16 | Applied Materials, Inc. | Processing system for forming layers |
| US10916464B1 (en) | 2019-07-26 | 2021-02-09 | Applied Materials, Inc. | Method of pre aligning carrier, wafer and carrier-wafer combination for throughput efficiency |
| US11183411B2 (en) | 2019-07-26 | 2021-11-23 | Applied Materials, Inc. | Method of pre aligning carrier, wafer and carrier-wafer combination for throughput efficiency |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108677158A (en) | 2018-10-19 |
| CN108677158B (en) | 2020-09-25 |
| KR101870586B1 (en) | 2018-06-22 |
| JP2018197362A (en) | 2018-12-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6468540B2 (en) | Substrate transport mechanism, substrate mounting mechanism, film forming apparatus, and methods thereof | |
| JP6999769B2 (en) | Film forming equipment, control method, and manufacturing method of electronic devices | |
| JP6461235B2 (en) | Substrate mounting apparatus, film forming apparatus, substrate mounting method, film forming method, and electronic device manufacturing method | |
| JP6393802B1 (en) | Substrate placing apparatus, substrate placing method, film forming apparatus, film forming method, alignment apparatus, alignment method, and electronic device manufacturing method | |
| JP6611389B2 (en) | Alignment apparatus, alignment method, film forming apparatus, film forming method, and electronic device manufacturing method | |
| JP6448067B2 (en) | Substrate mounting method, substrate mounting mechanism, film forming method, film forming apparatus, and electronic device manufacturing method | |
| JP7244401B2 (en) | Alignment apparatus, film formation apparatus, alignment method, film formation method, and electronic device manufacturing method | |
| JP7296303B2 (en) | Alignment system, deposition apparatus, deposition method, electronic device manufacturing method, and alignment apparatus | |
| JP6351918B2 (en) | Substrate mounting method, film forming method, and electronic device manufacturing method | |
| JP7247013B2 (en) | Alignment method, vapor deposition method using same, and method for manufacturing electronic device | |
| JP6821641B2 (en) | Substrate mounting equipment, film forming equipment, substrate mounting method, film forming method, and manufacturing method of electronic devices | |
| KR102665610B1 (en) | Alignment apparatus, film forming apparatus, alignment method, film forming method, and manufacturing method of electronic device | |
| JP2021073373A (en) | Substrate mounting method, substrate holding device, and method for producing electronic device | |
| JP7584286B2 (en) | Film forming method and film forming apparatus | |
| JP2025018768A (en) | Film forming equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181009 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181023 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181207 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20181218 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190108 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6468540 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |