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JP6476245B2 - CVD apparatus for carbon nanostructure growth and method for producing carbon nanostructure - Google Patents
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JP6476245B2 - CVD apparatus for carbon nanostructure growth and method for producing carbon nanostructure - Google Patents

CVD apparatus for carbon nanostructure growth and method for producing carbon nanostructure Download PDF

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JP6476245B2
JP6476245B2 JP2017152995A JP2017152995A JP6476245B2 JP 6476245 B2 JP6476245 B2 JP 6476245B2 JP 2017152995 A JP2017152995 A JP 2017152995A JP 2017152995 A JP2017152995 A JP 2017152995A JP 6476245 B2 JP6476245 B2 JP 6476245B2
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JP2019031706A (en
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美尚 中野
美尚 中野
野末 竜弘
竜弘 野末
義朗 福田
義朗 福田
尚希 塚原
尚希 塚原
村上 裕彦
村上  裕彦
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Ulvac Inc
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Description

本発明は、カーボンナノチューブやグラフェン等の炭素ナノ構造体を成長させるための炭素ナノ構造体成長用のCVD装置及び炭素ナノ構造体の製造方法に関する。   The present invention relates to a CVD apparatus for growing carbon nanostructures for growing carbon nanostructures such as carbon nanotubes and graphene, and a method for producing the carbon nanostructures.

この種の炭素ナノ構造体成長用のCVD装置は例えば特許文献1で知られている。このものは、処理炉と、処理炉内を通過するように処理対象物を搬送する搬送手段と、処理炉内に炭素含有の原料ガスを導入するガス導入手段と、原料ガスを加熱する加熱手段とを備える。搬送手段は、間隔を置いて配置される複数のローラとこれらのローラの周囲に巻き掛けられる無端状のメッシュベルト(帯状体)を備え、ローラを回転駆動することで、上側に位置するメッシュベルトの部分に載置される処理対象物が処理炉内を通過するように搬送される。そして、処理炉内を通過する間に、加熱された原料ガスを処理対象物表面に接触させることで、処理対象物の載置面側を含む処理対象物表面に炭素ナノ構造体が成長されるようになっている。   A CVD apparatus for growing this type of carbon nanostructure is known from Patent Document 1, for example. This includes a processing furnace, a transporting means for transporting a processing object so as to pass through the processing furnace, a gas introducing means for introducing a carbon-containing source gas into the processing furnace, and a heating means for heating the source gas. With. The conveying means includes a plurality of rollers arranged at intervals and an endless mesh belt (band-like body) wound around these rollers, and the mesh belt positioned on the upper side by rotationally driving the rollers. The processing object placed on this part is conveyed so as to pass through the inside of the processing furnace. Then, the carbon nanostructure is grown on the surface of the processing object including the mounting surface side of the processing object by bringing the heated source gas into contact with the surface of the processing object while passing through the processing furnace. It is like that.

ここで、上記特許文献1のような搬送手段では、メッシュベルトに常時所定の張力が付与されているため、耐久性よく安定して処理対象物を搬送するには、メッシュベルトを構成する線材として比較的外径(線径)が大きいものを用いたり、または、使用する線材を増加させて開口率を小さくしたりして機械的強度を持たせる必要が生じる。このような場合、処理対象物の載置面側のうち各線材に対向する部分に炭素ナノ構造体が成長しない(所謂ベルト痕の発生する)ことが判明した。これは、例えば、線径が大きいと、処理対象物の載置面側における線材の投影面まで原料ガスが行き届かないことに起因しているものと考えられる。その結果、電池の電極材料として基板の両面にカーボンナノチューブを成長させるような用途には利用できないという問題がある。   Here, in the conveying means such as Patent Document 1, since a predetermined tension is always applied to the mesh belt, in order to convey the object to be processed stably with high durability, as a wire constituting the mesh belt, It is necessary to use a material having a relatively large outer diameter (wire diameter) or to increase mechanical strength by increasing the number of wires used to reduce the aperture ratio. In such a case, it has been found that the carbon nanostructure does not grow (a so-called belt mark is generated) in the portion facing the wire on the mounting surface side of the processing object. This is considered to be due to the fact that, for example, when the wire diameter is large, the source gas does not reach the projection surface of the wire on the mounting surface side of the processing object. As a result, there is a problem that it cannot be used for applications in which carbon nanotubes are grown on both sides of a substrate as a battery electrode material.

特許第4581146号公報Japanese Patent No. 4581146

本発明は、以上の点に鑑み、処理対象物表面全体に亘って炭素ナノ構造体を成長させることができる炭素ナノ構造体成長用のCVD装置及び炭素ナノ構造体の製造方法を提供することをその課題とするものである。   In view of the above, the present invention provides a CVD apparatus for carbon nanostructure growth and a carbon nanostructure manufacturing method capable of growing the carbon nanostructure over the entire surface of the object to be processed. That is the subject.

上記課題を解決するために、処理炉と、処理炉内を通過するように処理対象物を搬送する搬送手段と、処理炉内に炭素含有の原料ガスを導入するガス導入手段と、原料ガスを加熱する加熱手段とを備え、処理室内を通過する処理対象物の表面に炭素ナノ構造体を成長させる本発明の炭素ナノ構造体成長用CVD装置は、搬送手段が、処理対象物が載置されて所定速度で走行される帯状体を有し、この帯状体に、処理対象物の載置面側への炭素ナノ構造体の成長を許容する複数の開口が形成され、帯状体と処理対象物との間にメッシュ体を介在させることを特徴とする。   In order to solve the above problems, a processing furnace, a transporting means for transporting a processing object so as to pass through the processing furnace, a gas introducing means for introducing a carbon-containing source gas into the processing furnace, and a source gas A CVD apparatus for carbon nanostructure growth according to the present invention, which comprises a heating means for heating, and grows the carbon nanostructure on the surface of the processing object passing through the processing chamber. A plurality of openings that allow the growth of the carbon nanostructure on the mounting surface side of the processing object is formed in the band, and the band and the processing object A mesh body is interposed between the two.

本発明によれば、帯状体と処理対象物との間に介在させるメッシュ体は、常時所定の張力が付与されるものではないので、機械的強度を考慮する必要がない。このため、例えば、メッシュ体を構成する線材の線径を可及的に小さくしたり、メッシュ体の開口率を可及的に大きくしたりすることで、処理対象物の載置面側の全面に亘って、加熱された原料ガスが行き届くようにすることができる。その結果、処理対象物表面全体に亘って炭素ナノ構造体を成長させることができる。   According to the present invention, the mesh body interposed between the belt-like body and the object to be processed does not always have a predetermined tension applied thereto, so that it is not necessary to consider the mechanical strength. For this reason, for example, by reducing the wire diameter of the wire constituting the mesh body as much as possible or increasing the aperture ratio of the mesh body as much as possible, the entire surface on the mounting surface side of the processing object In the meantime, the heated source gas can be made to reach. As a result, the carbon nanostructure can be grown over the entire surface of the object to be treated.

ところで、処理対象物の載置面側の全面に亘って加熱された原料ガスが行き届くようにするために、治具を用いて帯状体から処理対象物を浮かせることが考えられるが、処理対象物に治具を取り付ける手間や時間が掛かり、これでは、生産性が低下する。本発明においては、前記帯状体をメッシュベルトで構成し、前記メッシュ体を、前記メッシュベルトを構成する線材より小さい外径を持つ線材を組み付けて帯状に形成し、前記メッシュベルトの走行に伴って走行されるようにすることが好ましい。これによれば、治具の取り付けが不要となるため、生産性が低下しない。   By the way, in order to allow the heated source gas to reach the entire surface of the processing object on the mounting surface side, it is conceivable that the processing object is floated from the strip using a jig. It takes time and effort to attach the jig to the substrate, which reduces productivity. In the present invention, the belt-like body is formed of a mesh belt, the mesh body is formed into a belt-like shape by assembling wires having an outer diameter smaller than that of the wire constituting the mesh belt, and the mesh belt travels along It is preferable to make it run. According to this, since attachment of a jig | tool becomes unnecessary, productivity does not fall.

また、本発明においては、前記メッシュ体の開口率が、50〜99.8%の範囲に設定されることが好ましい。開口率が50%未満では、原料ガスが十分に供給されずに炭素ナノ構造体の成長が悪くなったりメッシュ体の形状の痕がついたりする場合がある一方で、開口率が99.8%を超えるとメッシュ体の機械的強度が低下する場合がある。   Moreover, in this invention, it is preferable that the aperture ratio of the said mesh body is set to the range of 50-99.8%. When the aperture ratio is less than 50%, the raw material gas is not sufficiently supplied, and the growth of the carbon nanostructure may be deteriorated or the mesh shape may be marked, while the aperture ratio is 99.8%. If it exceeds, the mechanical strength of the mesh body may decrease.

また、本発明においては、前記メッシュ体をシート状のものとし、前記メッシュ体を巻回した状態で保持し、前記メッシュ体を繰り出す繰出ローラと、繰出ローラから繰り出された前記メッシュ体を巻き取る巻取ローラとを備える場合、前記搬送手段は、これら繰出ローラと巻取ローラとの間に配置され、前記メッシュベルトが巻き掛けられる複数のローラと、これら複数のローラのうちの駆動用ローラを回転駆動する駆動部とで構成してもよい。この場合、メッシュベルトにメッシュ体を重ねておけば、駆動用ローラを回転駆動してメッシュベルトを所定速度で走行させると、この走行するメッシュベルトの走行に伴いメッシュ体を走行させることができる。これにより、繰出ローラと巻取ローラと回転駆動する駆動部を設ける必要がなく、CVD装置の低コスト化を図ることができる。   Further, in the present invention, the mesh body is formed into a sheet-like shape, the mesh body is held in a wound state, and a feeding roller that feeds out the mesh body and the mesh body that is fed out from the feeding roller are wound up. In the case of including a winding roller, the conveying means is disposed between the feeding roller and the winding roller, and includes a plurality of rollers around which the mesh belt is wound, and a driving roller among the plurality of rollers. You may comprise with the drive part which rotationally drives. In this case, if the mesh body is overlapped on the mesh belt, the mesh body can be run along with the traveling of the traveling mesh belt when the driving roller is rotated and the mesh belt is driven at a predetermined speed. Thereby, it is not necessary to provide a driving unit that rotationally drives the feeding roller and the winding roller, and the cost of the CVD apparatus can be reduced.

また、上記炭素ナノ構造体成長用のCVD装置を用いた本発明の炭素ナノ構造体の製造方法は、帯状体とメッシュ体とを重ねた後、メッシュ体に処理対象物を載置する準備工程と、処理炉内で帯状体とメッシュ体とを走行させ、処理炉内を通過する間に、加熱された原料ガスを処理対象物表面に接触させてこの処理対象物表面に炭素ナノ構造体を成長させる成長工程とを含み、前記成長工程にて、処理対象物の載置面側に成長する炭素ナノ構造体がメッシュ体を構成する各線材に夫々接触する第1段階と、各線材に接触した炭素ナノ構造体が更に成長させて、これら成長した炭素ナノ構造体により処理対象物を担持させる第2段階を経て炭素ナノ構造体が成長することを特徴とする。   The carbon nanostructure manufacturing method of the present invention using the above-described CVD apparatus for carbon nanostructure growth is a preparatory step of placing the object to be processed on the mesh body after the strip and the mesh body are overlapped Then, the belt-like body and the mesh body are run in the processing furnace, and while passing through the processing furnace, the heated source gas is brought into contact with the surface of the processing object, and the carbon nanostructure is formed on the surface of the processing object. A first step in which the carbon nanostructures that grow on the mounting surface side of the object to be processed come into contact with each wire constituting the mesh body, and in contact with each wire. The carbon nanostructure further grows, and the carbon nanostructure grows through a second stage in which the object to be treated is supported by the grown carbon nanostructure.

本発明によれば、第2段階にて、炭素ナノ構造体で担持される処理対象物とメッシュ体との間に隙間が形成され、この隙間を通じて処理対象物の載置面側の全面に亘って、加熱された原料ガスを行き届くようにすることができる。これにより、処理対象物の載置面側の全面に亘って炭素ナノ構造体を成長させることができる。   According to the present invention, in the second stage, a gap is formed between the processing object supported by the carbon nanostructure and the mesh body, and the entire surface of the processing object is placed through the gap. Thus, the heated raw material gas can be made to reach. Thereby, the carbon nanostructure can be grown over the entire surface on the mounting surface side of the processing object.

本発明の実施形態のCVD装置を示す模式的断面図。The typical sectional view showing the CVD device of the embodiment of the present invention. (a)〜(c)は、本発明の実施形態の炭素ナノ構造体の製造方法を説明する模式図。(A)-(c) is a schematic diagram explaining the manufacturing method of the carbon nanostructure of embodiment of this invention.

以下、図面を参照して、処理対象物を表面に触媒(図示省略)が形成された金属箔Fmとし、処理炉1内を通過する金属箔Fmの表面にカーボンナノチューブCtを成長させる場合を例に、本発明のCVD装置の実施形態について説明する。   Hereinafter, with reference to the drawings, an example in which a processing object is a metal foil Fm having a catalyst (not shown) formed on the surface and carbon nanotubes Ct are grown on the surface of the metal foil Fm passing through the processing furnace 1 will be described. Next, an embodiment of the CVD apparatus of the present invention will be described.

図1を参照して、Mは、本発明の実施形態のCVD装置である。CVD装置Mは、金属箔Fmにカーボンナノチューブを成長させる円筒状の処理炉1を備える。以下において、処理炉1内で金属箔Fmが搬送される方向をX軸方向(図1中の左右方向)右側、金属箔Fmの幅方向をY軸方向(図1の紙面に直交する方向)、これらX軸方向及びY軸方向を含む平面に対して直交する方向をZ軸方向(図1中の上下方向)として説明する。   Referring to FIG. 1, M is a CVD apparatus according to an embodiment of the present invention. The CVD apparatus M includes a cylindrical processing furnace 1 for growing carbon nanotubes on a metal foil Fm. In the following, the direction in which the metal foil Fm is conveyed in the processing furnace 1 is the right side in the X-axis direction (left-right direction in FIG. 1), and the width direction of the metal foil Fm is the Y-axis direction (the direction perpendicular to the paper surface in FIG. 1). The direction orthogonal to the plane including the X-axis direction and the Y-axis direction will be described as the Z-axis direction (the vertical direction in FIG. 1).

処理炉1のX軸方向両側には、上流側の補助室2と、下流側の補助室3とが夫々連設されている。処理炉1内には、図示省略のガス源に連通する、マスフローコントローラ11が介設されたガス管12の先端が配置され、炭素含有の原料ガスを処理炉1内に所定流量で導入できるようになっている。この場合、マスフローコントローラ11やガス管12が特許請求の範囲のガス導入手段を構成する。   An upstream auxiliary chamber 2 and a downstream auxiliary chamber 3 are connected to both sides of the processing furnace 1 in the X-axis direction. A distal end of a gas pipe 12 having a mass flow controller 11 interposed therein, which communicates with a gas source (not shown), is disposed in the processing furnace 1 so that a carbon-containing source gas can be introduced into the processing furnace 1 at a predetermined flow rate. It has become. In this case, the mass flow controller 11 and the gas pipe 12 constitute the gas introduction means in the claims.

処理炉1の外側には加熱手段13が設けられ、処理炉1内に導入された原料ガスを加熱し、これにより、加熱した原料ガスを金属箔Fmの表面に供給できるようになっている。加熱手段13としては、ランプや電熱線等の公知のものを用いることができるため、ここでは詳細な説明を省略する。加熱手段13の外側には、上下の断熱材14a,14bが設けられている。   A heating means 13 is provided outside the processing furnace 1, and the raw material gas introduced into the processing furnace 1 is heated, whereby the heated raw material gas can be supplied to the surface of the metal foil Fm. As the heating means 13, since well-known things, such as a lamp | ramp and a heating wire, can be used, detailed description is abbreviate | omitted here. Upper and lower heat insulating materials 14 a and 14 b are provided outside the heating means 13.

上記CVD装置Mは、処理炉1内を通過するように金属箔Fmを搬送する搬送手段15を備える。搬送手段15は、帯状体としての無端状のメッシュベルトVmと、このメッシュベルトVmが巻き掛けられる、間隔を置いて配置される複数(本実施形態では4個)のローラ15a,15b,15c,15dとを有する。ローラ15aにはモータDMの回転軸(図示省略)が連結されており、モータDMによりローラ15aが回転駆動されると、所定速度でメッシュベルトVmが走行されるようになっている。メッシュベルトVmには、所定の張力(例えば、20〜80N)が付与されているため、メッシュベルトVmを構成する線材W1として外径(線径)d1が比較的大きいものを組み付けることで機械的強度を持たせている。また、メッシュベルトVmには、金属箔Fmの載置面Fm1側へのカーボンナノチューブCtの成長を許容する複数の開口が形成されている。   The CVD apparatus M includes transport means 15 that transports the metal foil Fm so as to pass through the processing furnace 1. The conveying means 15 includes an endless mesh belt Vm as a belt-like body, and a plurality of (four in this embodiment) rollers 15a, 15b, 15c around which the mesh belt Vm is wound. 15d. A rotating shaft (not shown) of the motor DM is connected to the roller 15a, and when the roller 15a is rotationally driven by the motor DM, the mesh belt Vm travels at a predetermined speed. Since a predetermined tension (for example, 20 to 80 N) is applied to the mesh belt Vm, the mesh belt Vm is mechanically assembled by assembling a wire W1 constituting the mesh belt Vm having a relatively large outer diameter (wire diameter) d1. Has strength. The mesh belt Vm has a plurality of openings that allow the carbon nanotubes Ct to grow on the mounting surface Fm1 side of the metal foil Fm.

上流側の補助室2には、金属箔Fmを巻回した状態で保持し、金属箔Fmを繰り出す繰出ローラ21と、帯状のメッシュ体Bmを巻回した状態で保持し、繰出ローラ21の下流側でメッシュ体Bmを繰り出す繰出ローラ22とが設けられている。メッシュ体Bmとしては、メッシュベルトVmを構成する線材W1より小さい外径を持つ線材W2を組み付けて形成したもの(例えば、メッシュベルト)が用いられる。メッシュ体Bmの線材W2の外径d2は、0.01〜0.1mmの範囲に設定されることが好ましい。外径d2が0.01mm未満では、温度が上昇することで線材W2が伸びてメッシュベルトVm側へ垂れ下がってしまい、メッシュ体Bmを使用する効果が小さくなる場合がある一方で、外径d2が0.1mmを超えると、線材W2から金属箔Fmを十分に浮かせることができずにメッシュ体Bmの形状の痕がついてしまう場合がある。また、メッシュ体Bmの開口率は、50〜99.8%の範囲に設定されることが好ましい。開口率が50%未満では、原料ガスが十分に供給されずに炭素ナノ構造体の成長が悪くなったりメッシュ体の形状の痕がついたりする場合がある一方で、開口率が99.8%を超えるとメッシュ体Bmの機械的強度が低下する場合がある。   The auxiliary chamber 2 on the upstream side is held in a state in which the metal foil Fm is wound, and is held in a state in which the feeding roller 21 for feeding out the metal foil Fm and the belt-like mesh body Bm is wound, and downstream of the feeding roller 21. A feeding roller 22 for feeding the mesh body Bm on the side is provided. As the mesh body Bm, one formed by assembling a wire W2 having an outer diameter smaller than the wire W1 constituting the mesh belt Vm (for example, a mesh belt) is used. The outer diameter d2 of the wire W2 of the mesh body Bm is preferably set in the range of 0.01 to 0.1 mm. If the outer diameter d2 is less than 0.01 mm, the temperature W rises and the wire W2 extends and hangs down to the mesh belt Vm side, and the effect of using the mesh body Bm may be reduced. If it exceeds 0.1 mm, the metal foil Fm cannot be sufficiently floated from the wire W2, and the shape of the mesh body Bm may be left behind. Moreover, it is preferable that the aperture ratio of the mesh body Bm is set in the range of 50 to 99.8%. When the aperture ratio is less than 50%, the raw material gas is not sufficiently supplied, and the growth of the carbon nanostructure may be deteriorated or the mesh shape may be marked, while the aperture ratio is 99.8%. Exceeding may cause the mechanical strength of the mesh body Bm to decrease.

下流側の補助室3には、処理炉1を通過してカーボンナノチューブCt成長済みの金属箔Fmを巻き取って回収する巻取ローラ31と、巻取ローラ31の上流側でメッシュ体Bmを巻き取って回収する巻取ローラ32とが設けられている。ここで、カーボンナノチューブCt付きの金属箔Fmとメッシュ体Bmとを重ねた状態で一旦巻き取ることも考えられるが、カーボンナノチューブCtにメッシュ体Bmが圧接されるとメッシュ体Bmの痕が付いてしまうため、メッシュ体Bmと金属箔Fmとを分離して夫々巻き取って回収することが好ましい。   The auxiliary chamber 3 on the downstream side passes through the processing furnace 1 and winds up and collects the metal foil Fm grown with the carbon nanotubes Ct, and the mesh body Bm is wound on the upstream side of the winding roller 31. A take-up roller 32 is provided for collecting and collecting. Here, it is considered that the metal foil Fm with the carbon nanotube Ct and the mesh body Bm are once wound up, but when the mesh body Bm is pressed against the carbon nanotube Ct, the mesh body Bm is marked. Therefore, it is preferable that the mesh body Bm and the metal foil Fm are separated and wound up and collected.

このように搬送手段15を構成することで、モータDMによりローラ15aを回転駆動すると、メッシュベルトVmが所定速度で走行する。走行するメッシュベルトVmにはメッシュ体Bmが重ねられ、メッシュ体Bmに金属箔Fmが載置される。このため、メッシュベルトVmの走行に伴って繰り出されたメッシュ体Bmが走行され、さらにメッシュ体Bmの走行に伴って繰り出された金属箔Fmが処理炉1内を通過するように所定速度(例えば、0.01〜1.0m/min)で搬送される。処理炉1内を通過する金属箔Fmの表面に、加熱手段13によって加熱された原料ガスが供給されることで、当該表面からカーボンナノチューブCtが成長する。   By configuring the conveying means 15 in this way, when the roller 15a is rotationally driven by the motor DM, the mesh belt Vm travels at a predetermined speed. A mesh body Bm is superimposed on the traveling mesh belt Vm, and a metal foil Fm is placed on the mesh body Bm. For this reason, the mesh body Bm that has been unrolled as the mesh belt Vm travels travels, and the metal foil Fm that has been unrolled as the mesh body Bm travels passes through the processing furnace 1 at a predetermined speed (for example, , 0.01 to 1.0 m / min). By supplying the source gas heated by the heating means 13 to the surface of the metal foil Fm passing through the processing furnace 1, carbon nanotubes Ct grow from the surface.

上記CVD装置Mは、マイクロコンピュータやシーケンサ等を備えた公知の制御手段を有し、制御手段により上記マスフローコントローラ11の作動、加熱手段13の作動や、モータDMの作動等を統括管理するようになっている。   The CVD apparatus M has known control means including a microcomputer, a sequencer, etc., and the control means controls the operation of the mass flow controller 11, the operation of the heating means 13, the operation of the motor DM, and the like. It has become.

次に、図2も参照して、上記CVD装置Mを用いて、処理対象物を金属箔Fmの表面に触媒膜が成膜されたものとし、金属箔Fmの表面にカーボンナノチューブCtを成長させる場合を例に、炭素ナノ構造体の製造方法の実施形態について説明する。金属箔FmとしてはNi箔を用いることができ、触媒膜としてはFe膜を用いることができる。   Next, referring also to FIG. 2, it is assumed that a catalyst film is formed on the surface of the metal foil Fm using the CVD apparatus M, and carbon nanotubes Ct are grown on the surface of the metal foil Fm. Taking a case as an example, an embodiment of a method for producing a carbon nanostructure will be described. Ni foil can be used as the metal foil Fm, and Fe film can be used as the catalyst film.

先ず、ローラ15a,15b,15c,15dの周囲に帯状体であるメッシュベルトVmを巻き掛けることで、メッシュベルトVmをセットし、繰出ローラ21に金属箔Fmをセットし、繰出ローラ22にメッシュ体Bmをセットする。これにより、メッシュベルトVmにメッシュ体Bmが重ねられ、メッシュ体Bmに金属箔Fmが載置される(準備工程)。   First, the mesh belt Vm is set around the rollers 15a, 15b, 15c, and 15d, the mesh belt Vm is set, the metal foil Fm is set on the feeding roller 21, and the mesh body is set on the feeding roller 22. Set Bm. Thereby, the mesh body Bm is overlaid on the mesh belt Vm, and the metal foil Fm is placed on the mesh body Bm (preparation step).

ここで、帯状体は、開口を有してメッシュ体Bmを支持できるものであればよいため、上記メッシュベルトVmのようなメッシュ形状のものに限定されず、例えば、ラダーチェーンまたはラダーワイヤ(ローラチェーン)のような形状や、細トレイを連結させた無限軌道の履帯形状のものを用いることができる。即ち、後述の原料ガスを供給し得る開口率を確保することができ、メッシュ体Bm上に載置される処理対象物(金属箔Fm)の表面におけるカーボンナノチューブCtの成長を阻害しなければ、帯状体の形状は問わない。   Here, the belt-like body is not limited to a mesh shape like the mesh belt Vm as long as it has an opening and can support the mesh body Bm. For example, a ladder chain or a ladder wire (roller chain) ) Or a crawler track shape of an endless track with thin trays connected. That is, it is possible to ensure an aperture ratio capable of supplying a raw material gas, which will be described later, and if the growth of the carbon nanotubes Ct on the surface of the processing object (metal foil Fm) placed on the mesh body Bm is not inhibited, The shape of the strip is not limited.

次いで、モータDMによりローラ15aを回転駆動することにより、所定速度でメッシュベルトVmが走行する。走行するメッシュベルトVmにはメッシュ体Bmが重ねられているため、上流側の補助室2に設けられた繰出ローラ22からメッシュ体Bmが繰り出され、繰り出されたメッシュ体BmはメッシュベルトVmと共に処理炉1内をX軸方向右側に走行した後、下流側の補助室3に設けられた巻取ローラ32によって巻き取られる。さらに、メッシュ体Bmには金属箔Fmが載置されているため、補助室2に設けられた繰出ローラ21から金属箔Fmが繰り出され、繰り出された金属箔Fmはメッシュ体Bmと共に処理炉1内をX軸方向右側に走行し、処理室1内を通過した後、下流側の補助室3に設けられた巻取ローラ31によって巻き取られる。処理炉1内を金属箔Fmが通過する時間は、金属箔Fm表面から成長させるカーボンナノチューブCtの長さ(例えば、125μm)に応じて適宜設定することができる。   Next, the mesh belt Vm travels at a predetermined speed by rotationally driving the roller 15a by the motor DM. Since the mesh body Bm is superimposed on the traveling mesh belt Vm, the mesh body Bm is fed out from the feed roller 22 provided in the upstream auxiliary chamber 2 and the fed mesh body Bm is processed together with the mesh belt Vm. After traveling in the furnace 1 to the right in the X-axis direction, it is wound up by a winding roller 32 provided in the auxiliary chamber 3 on the downstream side. Further, since the metal foil Fm is placed on the mesh body Bm, the metal foil Fm is fed out from the feeding roller 21 provided in the auxiliary chamber 2, and the fed metal foil Fm is processed together with the mesh body Bm in the processing furnace 1. The vehicle travels to the right in the X-axis direction, passes through the processing chamber 1, and is then wound by a winding roller 31 provided in the auxiliary chamber 3 on the downstream side. The time for the metal foil Fm to pass through the processing furnace 1 can be appropriately set according to the length (for example, 125 μm) of the carbon nanotube Ct grown from the surface of the metal foil Fm.

このように金属箔Fmが処理炉1内を通過する間、マスフローコントローラ11を制御して処理炉1内に炭素含有の原料ガスを所定流量(例えば、100〜2000sccm)で導入する(このとき、処理炉1内の圧力は1kPa〜大気圧)。炭素含有の原料ガスとしては、エチレンガス、アセチレンガス及びメタンガス等の炭化水素や、エタノール等のアルコールを用いることができる。このような原料ガスと共に希釈ガスを処理炉1内に導入してもよく、希釈ガスとしては、水素ガス、窒素ガスや、アルゴン等の希ガスを用いることができる。この状態で加熱手段13を作動させて原料ガスを所定温度に加熱すると、加熱した原料ガスが金属箔Fmの表面に供給され、金属箔Fmの表面からカーボンナノチューブが成長する(成長工程)。加熱温度は、原料ガスの種類に応じて、400〜1050℃の範囲で適宜設定することができる。例えば、エチレンガスを用いる場合には750℃、アセチレンガスを用いる場合には720℃、メタンガスを用いる場合には800℃に夫々設定することができる。   Thus, while the metal foil Fm passes through the processing furnace 1, the mass flow controller 11 is controlled to introduce a carbon-containing source gas into the processing furnace 1 at a predetermined flow rate (for example, 100 to 2000 sccm) (at this time, The pressure in the processing furnace 1 is 1 kPa to atmospheric pressure). As the carbon-containing source gas, hydrocarbons such as ethylene gas, acetylene gas and methane gas, and alcohols such as ethanol can be used. A dilution gas may be introduced into the processing furnace 1 together with such a raw material gas, and a rare gas such as hydrogen gas, nitrogen gas, or argon can be used as the dilution gas. When the heating means 13 is operated in this state to heat the source gas to a predetermined temperature, the heated source gas is supplied to the surface of the metal foil Fm, and carbon nanotubes grow from the surface of the metal foil Fm (growth step). The heating temperature can be appropriately set in the range of 400 to 1050 ° C. according to the type of source gas. For example, the temperature can be set to 750 ° C. when ethylene gas is used, 720 ° C. when acetylene gas is used, and 800 ° C. when methane gas is used.

本実施形態によれば、メッシュベルトVmと金属箔Fmとの間に介在させるメッシュ体Bmは、常時所定の張力が付与されるものではないので、機械的強度を考慮する必要がない。このため、例えば、メッシュ体Bmを構成する線材W2の線径d2を可及的に小さくすることで、金属箔Fmの載置面Fm1側の全面に亘って、加熱された原料ガスが行き届くようにすることができる。その結果、金属箔Fm表面全体に亘ってカーボンナノチューブCtを成長させることができる。   According to this embodiment, since the mesh body Bm interposed between the mesh belt Vm and the metal foil Fm is not always given a predetermined tension, it is not necessary to consider the mechanical strength. For this reason, for example, by making the wire diameter d2 of the wire W2 constituting the mesh body Bm as small as possible, the heated source gas reaches the entire surface on the mounting surface Fm1 side of the metal foil Fm. Can be. As a result, the carbon nanotubes Ct can be grown over the entire surface of the metal foil Fm.

上記成長工程においては、金属箔Fmの載置面Fm1側に成長するカーボンナノチューブCtがメッシュ体Bmを構成する各線材W2に夫々接触する第1段階(図2(a)参照)と、各線材W2に接触したカーボンナノチューブCtが更に成長して、これら成長したカーボンナノチューブCtにより金属箔Fmを担持させる第2段階を経てカーボンナノチューブCtが成長される。第2段階でカーボンナノチューブCtにより金属箔Fmが担持されると、メッシュ体Bmと金属箔Fmとの間に隙間Sが形成され、この隙間Sを介して金属箔Fmの載置面Fm1側における線材W2の投影面まで確実に加熱された原料ガスを行き届かせることができる。これにより、金属箔の載置面側の全面に亘ってカーボンナノチューブCtを成長させることができる。   In the growth step, the first stage (see FIG. 2A) in which the carbon nanotubes Ct grown on the mounting surface Fm1 side of the metal foil Fm are in contact with the wire W2 constituting the mesh body Bm, respectively, and each wire. The carbon nanotubes Ct in contact with W2 further grow, and the carbon nanotubes Ct are grown through a second stage in which the grown carbon nanotubes Ct support the metal foil Fm. When the metal foil Fm is supported by the carbon nanotubes Ct in the second stage, a gap S is formed between the mesh body Bm and the metal foil Fm, and on the placement surface Fm1 side of the metal foil Fm via the gap S. The heated source gas can be surely delivered to the projection surface of the wire W2. As a result, the carbon nanotubes Ct can be grown over the entire surface of the metal foil on the mounting surface side.

ところで、金属箔Fmの載置面Fm1側の全面に亘って加熱された原料ガスが行き届くようにするために、つまり、上記隙間Sを形成するために、治具を用いて金属箔Fmを浮かせることが考えられるが、金属箔Fmに治具を取り付ける手間や時間が掛かり、これでは、生産性が低下する。本実施形態においては、帯状体をメッシュベルトVmで構成し、メッシュ体Bmを、メッシュベルトVmを構成する線材W1より小さい外径d2を持つ線材W2を組み付けて帯状に形成し、メッシュベルトVmの走行に伴って走行されるようにすればよく、治具の取り付けが不要となるため、生産性が低下しない。   By the way, in order to allow the heated source gas to reach the entire surface of the metal foil Fm on the mounting surface Fm1 side, that is, to form the gap S, the metal foil Fm is floated using a jig. However, it takes time and effort to attach the jig to the metal foil Fm, which reduces productivity. In the present embodiment, the belt-like body is configured by the mesh belt Vm, and the mesh body Bm is formed into a belt-like shape by assembling the wire W2 having an outer diameter d2 smaller than the wire W1 constituting the mesh belt Vm. It is only necessary to travel along with the travel, and it is not necessary to attach a jig, so productivity does not decrease.

以上、本発明の実施形態について説明したが、本発明は、上記実施形態に限定されるものではなく、本発明の範囲を逸脱しない範囲で適宜変形が可能である。上記実施形態では、処理対象物として金属箔Fmを用いる場合を例に説明したが、これに限定されるものではなく、他の基材を用いることができる。   Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the present invention. In the said embodiment, although the case where the metal foil Fm was used as a process target object was demonstrated to the example, it is not limited to this and another base material can be used.

上記実施形態では、処理炉1内に導入された原料ガスを加熱手段13により加熱する場合を例に説明したが、加熱した原料ガスを処理対象物表面に供給できればよく、例えば、処理炉1外で加熱した原料ガスを処理炉1内に導入するようにしてもよい。   In the above embodiment, the case where the raw material gas introduced into the processing furnace 1 is heated by the heating means 13 has been described as an example. However, it is only necessary that the heated raw material gas can be supplied to the surface of the processing object. The source gas heated in step 1 may be introduced into the processing furnace 1.

上記実施形態では、カーボンナノチューブCtを成長させる場合を例に説明したが、グラフェンのような他の炭素ナノ構造体を成長させる場合にも本発明を適用することができる。   In the above embodiment, the case where the carbon nanotube Ct is grown has been described as an example. However, the present invention can also be applied to the case where other carbon nanostructures such as graphene are grown.

上記実施形態では、処理対象物をシート状の金属箔Fmとし、メッシュ体Bmをシート状に形成する場合を例に説明したが、メッシュ体Bmの形状はこれに限定されず、例えば処理対象物が矩形の基材である場合、メッシュ体Bmもその基材の輪郭に対応する輪郭を持つ矩形状に形成してもよい。この場合、走行するメッシュベルトVm上に、基材を支持したメッシュ体Bmを載置することで、処理室1内を基材を通過させることができる。   In the above embodiment, the case where the processing object is a sheet-like metal foil Fm and the mesh body Bm is formed into a sheet has been described as an example. However, the shape of the mesh body Bm is not limited to this, for example, the processing object May be formed in a rectangular shape having a contour corresponding to the contour of the base material. In this case, the base material can be passed through the processing chamber 1 by placing the mesh body Bm supporting the base material on the traveling mesh belt Vm.

また、繰出ローラ21,22及び巻取ローラ31,32を駆動する他のモータを更に設けてもよい。但し、上記実施形態の如く、メッシュベルトVmを所定速度で走行させると、この走行するメッシュベルトVmの走行に伴いメッシュ体Bmが走行し、さらに金属箔Fmが走行するように構成すれば、他のモータを設ける必要がなく、CVD装置の低コスト化を図ることができる。   Further, another motor for driving the feeding rollers 21 and 22 and the winding rollers 31 and 32 may be further provided. However, if the mesh belt Vm is traveled at a predetermined speed as in the above embodiment, the mesh body Bm travels along with the travel of the traveling mesh belt Vm, and the metal foil Fm travels. It is not necessary to provide a motor, and the cost of the CVD apparatus can be reduced.

上記実施形態では、メッシュ体Bmの線材W2の断面が真円である場合を例に説明したが、線材W2の断面はこれに限らず、楕円、三角形、菱形の断面を持つ線材を用いることができるが、金属箔Fmの載置面Fm1と線接触する断面を持つ線材W2を用いることが好ましい。   In the above embodiment, the case where the cross section of the wire W2 of the mesh body Bm is a perfect circle has been described as an example. However, the cross section of the wire W2 is not limited to this, and a wire having an elliptical, triangular, or rhombic cross section may be used. Although it is possible, it is preferable to use the wire W2 having a cross section in line contact with the mounting surface Fm1 of the metal foil Fm.

Bm…メッシュ体、Fm…金属箔(処理対象物)、Fm1…載置面、M…炭素ナノ構造体成長用のCVD装置、Vm…メッシュベルト(帯状体)、W1…メッシュベルトVmを構成する線材、W2…メッシュ体Bmの線材、1…処理炉、11…マスフローコントローラ(ガス導入手段)、12…ガス管(ガス導入手段)、13…加熱手段。   Bm ... mesh body, Fm ... metal foil (processing object), Fm1 ... mounting surface, M ... CVD apparatus for carbon nanostructure growth, Vm ... mesh belt (band-like body), W1 ... mesh belt Vm Wire material, W2 ... Wire material of mesh body Bm, 1 ... Processing furnace, 11 ... Mass flow controller (gas introduction means), 12 ... Gas pipe (gas introduction means), 13 ... Heating means.

Claims (3)

処理炉と、処理炉内を通過するように処理対象物を搬送する搬送手段と、処理炉内に炭素含有の原料ガスを導入するガス導入手段と、原料ガスを加熱する加熱手段とを備え、処理室内を通過する処理対象物の表面に炭素ナノ構造体を成長させる炭素ナノ構造体成長用CVD装置であって、
搬送手段は、処理対象物が載置されて所定速度で走行される帯状体を有し、この帯状体に、処理対象物の載置面側への炭素ナノ構造体の成長を許容する複数の開口が形成されるものにおいて、
帯状体と処理対象物との間にメッシュ体を介在させ
前記メッシュ体が、前記帯状体を構成する線材より小さい外径を持つ線材を組み付けて帯状に形成したものであり、
前記メッシュ体の開口率が、50〜99.8%の範囲に設定されることを特徴とする炭素ナノ構造体成長用のCVD装置。
A processing furnace, a transporting means for transporting a processing object so as to pass through the processing furnace, a gas introducing means for introducing a carbon-containing source gas into the processing furnace, and a heating means for heating the source gas, A carbon nanostructure growth CVD apparatus for growing a carbon nanostructure on a surface of a processing object passing through a processing chamber,
The transport means has a belt-like body on which the processing object is placed and travels at a predetermined speed, and the belt-like body allows a plurality of carbon nanostructures to grow on the placement surface side of the processing object. In what the opening is formed,
A mesh body is interposed between the strip and the object to be processed ,
The mesh body is formed by assembling a wire having an outer diameter smaller than the wire constituting the belt-like body,
The opening ratio of the mesh body, CVD apparatus for carbon nanostructure growth which is characterized in Rukoto is set in a range of 50 to 99.8%.
請求項1記載の炭素ナノ構造体成長用のCVD装置であって、前記帯状体がメッシュベルトで構成されるものにおいて、
前記メッシュ体が、前記メッシュベルト走行に伴って走行されることを特徴とする炭素ナノ構造体成長用のCVD装置
The CVD apparatus for carbon nanostructure growth according to claim 1, wherein the belt-shaped body is constituted by a mesh belt.
The mesh body has pre SL CVD apparatus for carbon nanostructure growth which is characterized in that travel with the travel of the mesh belt.
求項1または請求項2記載の炭素ナノ構造体成長用のCVD装置を用いた炭素ナノ構造体の製造方法であって、
帯状体とメッシュ体とを重ねた後、メッシュ体に処理対象物を載置する準備工程と、
処理炉内で帯状体とメッシュ体とを走行させ、処理炉内を通過する間に、加熱された原料ガスを処理対象物表面に接触させてこの処理対象物表面に炭素ナノ構造体を成長させる成長工程とを含み、
前記成長工程にて、処理対象物の載置面側に成長する炭素ナノ構造体がメッシュ体を構成する各線材に夫々接触する第1段階と、各線材に接触した炭素ナノ構造体が更に成長して、これら成長した炭素ナノ構造体により処理対象物を担持させる第2段階を経て炭素ナノ構造体を成長させることを特徴とする炭素ナノ構造体の製造方法。
A method of manufacturing a Motomeko 1 or claim 2 carbon nano structure using the CVD apparatus for carbon nanostructure growth according,
After stacking the belt-shaped body and the mesh body, a preparation step of placing the processing object on the mesh body;
The belt-like body and the mesh body are run in the processing furnace, and while passing through the processing furnace, the heated source gas is brought into contact with the surface of the processing object to grow the carbon nanostructure on the surface of the processing object. Growth process,
In the growth step, a first stage in which the carbon nanostructures that grow on the mounting surface side of the object to be processed are in contact with the wires constituting the mesh body, and the carbon nanostructures that are in contact with the wires further grow. And the carbon nanostructure manufacturing method characterized by growing a carbon nanostructure through the 2nd step of carrying | supporting a process target object with these grown carbon nanostructure.
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