JP6476371B2 - Substrate processing apparatus, heating unit, member, semiconductor device manufacturing method, and piping heating method - Google Patents

Description

  The present invention relates to a substrate processing apparatus, a heating unit, a member, a semiconductor device manufacturing method, and a piping heating method.

  Semiconductor manufacturing equipment needs to supply and exhaust necessary gases, etc. Gas supply and exhaust pipes are equipped with a heater that heats the pipes, cooling the gas that circulates inside while maintaining the heating state It is considered to prevent re-liquefaction and by-product adhesion due to.

JP-A-11-108283

  The objective of this invention is providing the structure which reduces the temperature nonuniformity of the piping heated with a heater.

According to one aspect of the invention,
A processing chamber for processing a substrate; a gas supply system having a gas pipe for supplying a source gas into the processing chamber; an exhaust system having an exhaust pipe for discharging a gas containing the source gas from the processing chamber; and the gas pipe And a heating part that heats the outer wall of at least one of the exhaust pipes,
The heating section surrounds the outer periphery of the heating zone that heats the outer wall of the piping and the heating zone, has a space inside, and supplies the gas to the space to supply the gas to the heating zone. And an enclosure configured to apply pressure to the housing.

  According to the present invention, it becomes possible to reduce temperature unevenness of piping.

It is a perspective view for demonstrating the basic composition of piping heating used suitably for an embodiment. It is sectional drawing for demonstrating the structure of the piping heating used suitably for embodiment. It is sectional drawing for demonstrating the operation (at the time of heating) of the piping heating used suitably for embodiment. It is sectional drawing for demonstrating the operation (at the time of cooling) of the piping heating used suitably for embodiment. It is a schematic oblique view for demonstrating the substrate processing apparatus used suitably for the Example. It is a schematic longitudinal cross-sectional view for demonstrating the processing furnace used suitably with the substrate processing apparatus which concerns on an Example. It is a block diagram for demonstrating the structure of the controller used suitably with the substrate processing apparatus which concerns on an Example. It is a flowchart which shows the substrate processing process used suitably with the substrate processing apparatus which concerns on an Example.

  Hereinafter, embodiments and examples will be described with reference to the drawings. However, in the following description, the same components may be denoted by the same reference numerals and repeated description may be omitted. In order to clarify the description, the drawings may be schematically represented with respect to the width, thickness, shape, etc. of each part as compared to the actual embodiment, but are merely examples, and the interpretation of the present invention is not limited to them. It is not limited.

First, piping heating according to the embodiment will be described with reference to FIGS. 1 to 4.
The heater 310 serving as a heating unit is a jacket heater in which a heating zone 311 in contact with the pipe 300 and a surrounding portion 312 covering the outer periphery of the heating zone 311 are integrally formed. FIG. 1 shows an overview of this jacket heater, and FIG. 2 is a sectional view in which a heater 310 is attached around a pipe 300. The member of the heater 310 is a non-expanding and hermetically sealed material. For example, it is preferable to use a flexible fluororesin sheet that is free from the concern of siloxane (generated from silicon in a high temperature state) that becomes a contamination source in a semiconductor manufacturing factory. The heater 310 is configured so that the entire surface of the pipe 300 can be surrounded by a shape whose cross section is mainly C-shaped. The C-shaped split position (gap portion) 313 has a structure that prevents heat escape by a heat insulating material. The heater 310 is fixed at a position where the designed pipe diameter is achieved, for example, by a belt (band) 314 using a snap button as a fixing portion. In addition, the fixing | fixed part 314 should just be a structure which blocks a heat escape, and may be a magic tape, D pipe | tube, etc.

As shown in FIG. 2, a space 315 is formed in a sealed shape inside the enclosure 312, and supply / exhaust connection ports 316 and 317 which are supply / exhaust portions are provided. The connection port 316 on the supply side is provided with a check valve 318 which is an opening / closing part, and can maintain a sealed state. The medium supplied and exhausted to the space 315 may be a fluid, and may be a liquid or an expectation. Hereinafter, in this embodiment, a gas that is a medium will be described as an example of the embodiment. The heater 310 that has been pressurized by the supply of the gas to the space 315 is flexible, and since expansion to the outside is suppressed by a snap button or the like, it expands to the inside (pipe side) (pressure is applied to the pipe). ) Is configured as follows. With such a configuration, the adhesion between the heating zone 311 and the outer wall of the pipe 300 is improved. Here, in order to make the configuration in which the pressure is more evenly applied to the heating zone 311 (pipe 300), the member outside the enclosure 312 may be made a member harder than the member on the heating zone 311 side (pipe 300 side). preferable. Further, it is insulated by the stationary gas in the space 315. The gas that is a medium supplied to the space 315 may be N ₂ , He, Ne, Ar, Cr, or Xe gas in addition to the atmosphere. The connection port 317 on the exhaust side is also provided with a check valve (or switching valve) 319 which is an opening / closing part, and manages the inside so as to become a predetermined pressure or a predetermined pressure or higher.

  During substrate processing (heating), heating is performed by the heating zone 311, and as shown in FIG. 3, the check valve (or switching valve) 319 of the connection port 317 is closed and gas is supplied from the connection port 316 to the space 315. To pressurize the space 315 to a predetermined pressure. Thereby, the outer wall of the pipe 300 is heated to the first temperature. On the other hand, during cooling, heating of the outer wall of the pipe 300 by the heating zone 311 is stopped, and as shown in FIG. 4, the check valve (or switching valve) 319 of the connection port 317 is opened and the predetermined pressure is released to release the heat. Is done. At this time, the gas is continuously supplied from the connection port 316 (continuously supplied), the gas is continuously exhausted from the connection port 317 (continuously exhausted), and the space 315 is regulated. Thereby, the piping 300 becomes 2nd temperature lower than 1st temperature. In particular, when cleaning the exhaust pipe, which is maintenance, a highly corrosive gas is used, it is necessary to lower the pipe heating temperature. The heater 310 has the above-described configuration, and the piping temperature can be rapidly lowered by continuing to exhaust the gas in the internal space 315. Thereby, the maintenance time can be shortened.

  A substrate processing apparatus according to an example using the heater according to the embodiment will be described with reference to FIGS. In this specification, when the term “wafer” is used, it means “wafer itself” or “a laminate (aggregate) of a wafer and a predetermined layer or film formed on the surface”. In other words, it may be called a wafer including a predetermined layer or film formed on the surface. In addition, when the term “wafer surface” is used in this specification, it means “the surface of the wafer itself (exposed surface)” or “the surface of a predetermined layer or film formed on the wafer”. That is, it may mean “the outermost surface of the wafer as a laminated body”.

  Therefore, in the present specification, the phrase “supplying a predetermined gas to the wafer” means “supplying a predetermined gas to the surface (exposed surface) of the wafer itself”, It may mean that “a predetermined gas is supplied to a layer, a film, or the like formed on the wafer, that is, to the outermost surface of the wafer as a laminated body”. Further, in this specification, when “describe a predetermined layer (or film) on the wafer” is described, “determine a predetermined layer (or film) on the surface (exposed surface) of the wafer itself”. , Or "to form a predetermined layer (or film) on the layer or film formed on the wafer, that is, on the outermost surface of the wafer as a laminate" There is.

  In this specification, the term “substrate” is also synonymous with the term “wafer”.

(1) Configuration of substrate processing apparatus (overall configuration of substrate processing apparatus)
As shown in FIG. 5, the substrate processing apparatus 1 according to the embodiment is provided with a holder for transferring a cassette 100 as a substrate storage container to and from an external transfer device (not shown) on the front side inside the housing 101. A cassette stage 105 as a member is provided, a cassette elevator 115 as an elevating means is provided on the rear side of the cassette stage 105, and a cassette transfer machine 114 as a conveying means is attached to the cassette elevator 115. A cassette shelf 109 as a means for placing the cassette 100 is provided on the rear side of the cassette elevator 115, and a spare cassette shelf 110 is also provided above the cassette stage 105. A clean unit 118 is provided above the spare cassette shelf 110 so that clean air is circulated inside the housing 101.

  A processing furnace 202 is provided above the rear portion of the housing 101, and a boat 217 as a substrate holding unit that holds the wafers 200 as substrates in a horizontal posture in multiple stages is raised and lowered to the processing furnace 202 below the processing furnace 202. A boat elevator 121 as an elevating means is provided, and a seal cap 219 as a lid is attached to the tip of an elevating member 122 attached to the boat elevator 121 to support the boat 217 vertically. Between the boat elevator 121 and the cassette shelf 109, a transfer elevator 113 as an elevating means is provided, and a wafer transfer machine 112 as a transfer means is attached to the transfer elevator 113. Next to the boat elevator 121, a furnace port shutter 116 is provided as a closing unit that has an opening / closing mechanism and hermetically closes the wafer loading / unloading port on the lower side of the processing furnace 202.

  The cassette 100 loaded with the wafers 200 is loaded into the cassette stage 105 from an external transfer device (not shown) in an upward posture, and is rotated by 90 ° on the cassette stage 105 so that the wafer 200 is in a horizontal posture. Further, the cassette 100 is transported from the cassette stage 105 to the cassette shelf 109 or the spare cassette shelf 110 by cooperation of the raising / lowering operation of the cassette elevator 115, the transverse operation, the advance / retreat operation of the cassette transfer machine 114, and the rotation operation.

  The cassette shelf 109 has a transfer shelf 123 in which the cassette 100 to be transferred by the wafer transfer device 112 is stored. The cassette 100 to which the wafer 200 is transferred is transferred by the cassette elevator 115 and the cassette transfer device 114. Transferred to the transfer shelf 123.

  When the cassette 100 is transferred to the transfer shelf 123, the wafers 200 are transferred from the transfer shelf 123 to the boat 217 in a lowered state by the cooperation of the advance / retreat operation, the rotation operation, and the lifting / lowering operation of the transfer elevator 113. Is transferred.

  When a predetermined number of wafers 200 are transferred to the boat 217, the boat 217 is inserted into the processing furnace 202 by the boat elevator 121, and the processing furnace 202 is hermetically closed by the seal cap 219. In the processing furnace 202 that is hermetically closed, the wafer 200 is heated and a processing gas is supplied into the processing furnace 202 to process the wafer 200.

  When the processing on the wafer 200 is completed, the wafer 200 is transferred from the boat 217 to the cassette 100 of the transfer shelf 123 by the reverse procedure of the operation described above, and the cassette 100 is transferred from the transfer shelf 123 by the cassette transfer device 114. It is transferred to the cassette stage 105 and carried out of the housing 101 by an external transfer device (not shown).

  The furnace port shutter 116 hermetically closes the wafer loading / unloading port of the processing furnace 202 when the boat 217 is in the lowered state, and prevents outside air from being caught in the processing furnace 202.

The transport operation of the cassette transfer machine 114 and the like is controlled by the transport control means 124.
(Processing furnace)
As shown in FIG. 6, a reaction tube 203 is provided inside a heater 207 as a heating means as a processing container for processing a wafer 200 as a substrate, and a lower end opening of the reaction tube 203 has a seal cap 219 as a lid. Thus, the process furnace 202 is formed by at least the heater 207, the reaction tube 203, and the seal cap 219, and the process chamber 201 is formed by at least the reaction tube 203 and the seal cap 219. doing. A boat 217 as a substrate holding unit is installed in the seal cap 219 via a quartz cap 218 and is inserted into the processing chamber 201. On the boat 217, a plurality of wafers 200 to be batch-processed are stacked horizontally in multiple stages. The heater 207 heats the wafer 200 inserted into the processing chamber 201 to a predetermined temperature.

  A gas pipe 10 for supplying a first source gas and a gas pipe 11 for supplying a second source gas are provided in communication with the processing chamber 201. From the gas pipe 10, a nozzle installed in the processing chamber 201 through a flow rate controller (mass flow controller: MFC) 41 and a valve 34 for controlling the flow rate from the gas supply unit 4 for the first source gas. The first source gas is supplied into the processing chamber 201 through 234. The gas pipe 10, the flow rate controller 41, the valve 34, and the nozzle 234 constitute a first gas supply system. From the gas pipe 11, via the flow rate controller 32 and the valve 35 for controlling the flow rate from the gas supply unit 5 for the second source gas, and further through the nozzle 233 installed in the processing chamber 201, A second source gas is supplied into the processing chamber 201. The gas pipe 11, the flow rate controller 32, the valve 35, and the nozzle 233 constitute a second source gas supply system. A gas pipe heater 22 for heating the gas pipe 10 is provided around the gas pipe 10 from the gas supplier 4 to the processing chamber 201, and the gas pipe from the valve 35 installed in the gas pipe 11 to the processing furnace 101. A gas pipe heater 24 for heating the gas pipe 11 is provided around the gas pipe 11. The jacket heater 310 according to the embodiment is used as the gas pipe heater 22 and the gas pipe heater 24.

  A gas pipe 40 for supplying an inert gas is connected to the gas pipe 10 via a valve 39 on the downstream side of the valve 34. A gas pipe heater 22 is also provided around the gas pipe 40 from the valve 39 to the connecting portion between the gas pipe 10 and the gas pipe 40. Further, a gas pipe 6 for supplying an inert gas is connected to the gas pipe 11 via a valve 36 on the downstream side of the valve 35. A gas pipe heater 24 is also provided around the gas pipe 6 from the valve 36 to the connecting portion between the gas pipe 11 and the gas pipe 6.

  The processing chamber 201 is connected to a vacuum pump 246 through an APC valve 243 by an exhaust pipe 231 that is an exhaust pipe for exhausting gas. The exhaust pipe 231, the APC valve 243, and the vacuum pump 246 constitute a gas exhaust system. An exhaust pipe heater 20 that heats the exhaust pipe 231 is provided around the exhaust pipe 231 from the reaction tube 203 to the vacuum pump 246. As the exhaust pipe heater 20, the jacket heater 310 according to the embodiment is used.

  A nozzle 234 is installed along the loading direction of the wafer 200 from the lower part to the upper part of the reaction tube 203. The nozzle 234 is provided with a plurality of gas supply holes for supplying gas. This gas supply hole is opened at an intermediate position between the adjacent wafers 200, and gas is supplied to the wafers 200. A nozzle 233 is similarly installed along the stacking direction of the wafer 200 at a position rotated about 120 ° on the inner circumference of the reaction tube 203 from the position of the nozzle 234. The nozzle 233 is similarly provided with a plurality of gas supply holes. The nozzle 234 communicates with the gas pipe 10 as described above, and supplies the first raw material gas and the inert gas from the gas pipe 40 connected to the gas pipe 10 into the processing chamber 201. Further, the nozzle 233 communicates with the gas pipe 11 as described above, and supplies the second raw material gas and the inert gas from the gas pipe 6 connected to the gas pipe 11 into the processing chamber 201. The source gas is alternately supplied from the nozzle 234 and the nozzle 233 into the processing chamber 201 to perform film formation.

  A boat 217 for mounting a plurality of wafers 200 in multiple stages at the same interval is provided in the reaction tube 203, and the boat 217 can enter and exit the reaction tube 203 by the boat elevator 121. Further, in order to improve the uniformity of processing, a boat rotation mechanism 267 that is a rotation means for rotating the boat 217 is provided. By rotating the boat rotation mechanism 267, the boat 217 held by the quartz cap 218 is removed. It is designed to rotate.

(controller)
The controller will be described with reference to FIG.

  The controller 321 as a control unit (control means) includes a heater 207, a heater for gas piping 22, a heater for gas piping 24, a heater for exhaust piping 20, flow rate controllers 32, 33, 41, valves 34, 35, 36, 39. , APC valve 243, vacuum pump 246, boat rotating mechanism 267, boat lifting mechanism, etc., temperature adjustment and flow rate control of heater 207, gas piping heater 22, gas piping heater 24, exhaust piping heater 20 Adjustment of the flow rate of the vessels 32, 33, 41, opening / closing operation of the valves 34, 35, 36, 39 and APC valve 243, starting and stopping of the vacuum pump 246, adjustment of the rotation speed of the boat rotation mechanism 267, control of the lifting operation of the boat lifting mechanism Etc. are performed.

  The controller 321 is configured as a computer including a CPU (Central Processing Unit) 321a, a RAM (Random Access Memory) 321b, a storage device 321c, and an I / O port 321d. The RAM 321b, the storage device 321c, and the I / O port 321d are configured to exchange data with the CPU 321a via the internal bus 321e. For example, an input / output device 322 configured as a touch panel or the like is connected to the controller 321.

  The storage device 321c is configured by, for example, a flash memory, an HDD (Hard Disk Drive), or the like. In the storage device 321c, a control program for controlling the operation of the substrate processing apparatus, a process recipe in which a substrate processing procedure and conditions to be described later are described, and the like are stored in a readable manner. The process recipe is combined so that a predetermined result can be obtained by causing the controller 321 to execute each procedure in a substrate processing step to be described later. The RAM 321b is configured as a memory area (work area) in which a program or data read by the CPU 321a is temporarily stored.

  The I / O port 321d includes the flow rate controllers 32 and 33, the valves 34, 35, 36, and 39, the pressure sensor 245, the APC valve 243, the vacuum pump 246, the heater 207, the gas pipe heater 22, and the gas pipe heater. 24, the exhaust pipe heater 20, the temperature sensor 263, the rotation mechanism 267, the boat elevator 115, and the like.

  The CPU 321a is configured to read and execute a control program from the storage device 321c, and to read a process recipe from the storage device 321c in response to an operation command input from the input / output device 322 or the like. The CPU 321a then adjusts the flow rates of various gases by the flow rate controllers 32 and 33, opens and closes the valves 34, 35, 36, and 39, opens and closes the APC valve 243, and APC in accordance with the contents of the read process recipe. The pressure adjustment operation based on the pressure sensor 245 by the valve 243, the temperature adjustment operation of the heater 207 based on the temperature sensor 263, the start and stop of the vacuum pump 246, the rotation and rotation speed adjustment operation of the boat 217 by the rotation mechanism 267, and the boat elevator 121 It is configured to control the lifting and lowering operation of the boat 217 and the like.

  The controller 321 is connected to an external storage device (for example, a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or a DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory or a memory card). The stored program can be configured by installing it in a computer. The storage device 321c and the external storage device 323 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium. When the term “recording medium” is used in this specification, it may include only the storage device 321c alone, may include only the external storage device 323 alone, or may include both. The provision of the program to the computer may be performed using communication means such as the Internet or a dedicated line without using the external storage device 323.

(2) Substrate Processing Step Next, an outline of a substrate processing step for processing a substrate using the substrate processing apparatus 1 as a semiconductor manufacturing apparatus will be described. This substrate processing step is, for example, a step for manufacturing a semiconductor device. In the following description, the operation and processing of each part constituting the substrate processing apparatus 1 are controlled by the controller 321.
Here, an example of forming a SiO ₂ (silicon oxide) film as a thin film on the wafer 200 using Si ₂ H ₆ (disilane) as the first source gas and O ₃ (ozone) as the second source gas. Will be described. For example, a predetermined film may be formed on the wafer 200 in advance. A predetermined pattern may be formed in advance on the wafer 200 or a predetermined film.

The substrate processing process will be described with reference to FIG.
(Substrate carrying-in process S102)
First, the wafers 200 are loaded into the boat 217, loaded into the processing chamber 201, and the substrate loading step S102 is performed.

(Film formation process S104)
Next, a film forming step S104 for forming a thin film on the surface of the wafer 200 is performed. The film forming process sequentially executes the following four steps. During steps 1 to 4, the wafer 200 is heated to a predetermined temperature by the heater 207. The gas pipe heaters 22 and 24 heat the gas pipes 10 and 11 to the first specified temperature. The first specified temperature is appropriately set according to the source gas. In the present embodiment, since Si ₂ H ₆ (disilane) is used as the source gas, for example, the film is heated to 130 ° C. or more as the first specified temperature during the film forming step S104 described later. In the present embodiment, the case where the exhaust pipe heater 20 is also heated during the film forming step S104 described later will be described.
[Step 1]
In step 1, Si ₂ H ₆ gas is flowed. First, both the valve 34 provided in the gas pipe 10 and the APC valve 243 provided in the exhaust pipe 231 are opened, and Si ₂ H ₆ gas whose flow rate is adjusted by the flow rate controller 41 from the gas supply unit 4 is passed through the gas pipe 10. The gas is exhausted from the exhaust pipe 231 while being supplied into the processing chamber 201 from the gas supply hole of the nozzle 234. At this time, the gas pipe heater 22 heats the gas pipe 10, and the exhaust pipe heater 20 heats the exhaust pipe 231. At this time, the pressure in the processing chamber 201 is kept at a predetermined pressure.

Thereby, a silicon thin film is formed on the surface of the wafer 200.
[Step 2]
In step 2, the valve 34 of the gas pipe 10 is closed to stop the supply of Si ₂ H ₆ . The APC valve 243 of the exhaust pipe 231 is kept open, the inside of the processing chamber 201 is exhausted by the vacuum pump 246, and the residual Si ₂ H ₆ is removed from the processing chamber 201. In addition, the valve 39 provided in the gas pipe 40 is opened, an inert gas such as N ₂ is supplied from the gas pipe 40 into the processing chamber 201, and the processing chamber 201 is purged. ₂ H ₆ is discharged out of the processing chamber 201. At this time, the gas pipe heater 22 heats the gas pipe 10 and the gas pipe 40, and the exhaust pipe heater 20 heats the exhaust pipe 231. Further, the valve 36 provided in the gas pipe 6 is opened, and an inert gas such as N ₂ whose flow rate is adjusted by the flow rate controller 33 is also supplied into the processing chamber 201 from the gas pipe 6. At this time, the gas pipe heater 24 heats the gas pipe 11 and the gas pipe 6.
[Step 3]
In step 3, O ₃ gas is flowed. Both the valve 35 and the APC valve 243 provided in the exhaust pipe 231 provided in the pipe 11 are opened, and the O ₃ gas whose flow rate is adjusted by the flow rate controller 32 from the gas supply unit 5 passes through the gas pipe 11 and the nozzle 233. The gas is exhausted from the exhaust pipe 231 while being supplied into the processing chamber 201 from the gas supply hole. At this time, the gas pipe heater 24 heats the gas pipe 11, and the exhaust pipe heater 20 heats the exhaust pipe 231. At this time, the pressure in the processing chamber 201 is adjusted to a predetermined pressure. By supplying O ₃ , the silicon thin film in which Si ₂ H ₆ is formed on the surface of the wafer 200 and the surface of O ₃ react with each other to form an SiO ₂ film on the wafer 200.
[Step 4]
In Step 4, the inside of the processing chamber 201 is again purged with an inert gas. The valve 35 of the gas pipe 11 is closed and the supply of O ₃ is stopped. The APC valve 243 of the exhaust pipe 231 is kept open, the inside of the processing chamber 201 is exhausted by the vacuum pump 246, and residual O ₃ is removed from the processing chamber 201. Further, the valve 36 provided in the gas pipe 6 is opened, and an inert gas such as N ₂ whose flow rate is adjusted by the flow rate controller 33 is supplied from the gas pipe 6 into the processing chamber 201 to purge the processing chamber 201. I do. At this time, the gas pipe heater 24 heats the gas pipe 11 and the gas pipe 6, and the exhaust pipe heater 20 heats the exhaust pipe 231. Further, the valve 39 provided in the gas pipe 40 is opened, and an inert gas such as N ₂ is supplied from the gas pipe 40 to the processing chamber 201. At this time, the gas pipe heater 22 heats the gas pipe 10 and the gas pipe 40.

Steps 1 to 4 are defined as one cycle, and this cycle is repeated a plurality of times to form a SiO ₂ film having a predetermined thickness on the wafer 200.

(Substrate unloading step S106)
Next, the boat 217 on which the wafers 200 on which SiO ₂ is formed is loaded from the processing chamber 201.

  According to the present embodiment, since the temperature unevenness of the gas pipes 10 and 11 and the exhaust pipe 231 can be reduced, the gas temperature in the processing chamber 201 and the stability of gas supply / discharge are improved, and the film formation is uniform. It becomes possible to improve the property.

In the present embodiment, Si ₂ H ₆ is supplied as a raw material gas. However, the present invention is not limited to this, and liquid raw materials (TiCl ₄ , HCDS (Si ₂ Cl ₆ ), TEOS, etc.) and solid materials (AlCl _{3) are used.} , HfCl ₄ , ZrCl _{4, and the} like) are configured so as not to be reliquefied and solidified by increasing the temperature stepwise from the supply device (in this embodiment, the flow rate controller 41). For example, the heating near the reaction tube is set to 150 ° C. to 200 ° C. Thus, according to the piping heater in the present embodiment, even with the raw material gas, it is possible to control the liquefaction and solidification temperature or more without causing uneven heating, so that the raw material gas can be stably supplied.

<Effect in this embodiment>
According to the present embodiment, at least one or more of the following (a) to (h) are achieved.

  (a) According to this embodiment, uniform pipe heating can be performed by pressure contact. In addition, since there is no unevenness in the temperature (heating) of the piping, it is possible to supply the reaction material stably. Further, since temperature (heating) unevenness does not occur, cold spots are suppressed, and adhesion of unreacted gas residues and by-products can be prevented.

  (b) According to this embodiment, since there is no generation factor of siloxane, heating at a higher temperature than before is possible.

  (c) According to this embodiment, since a jacket heater made of a conventional heat insulating material is not used, a low-cost and low-contamination jacket heater can be provided. Further, since no heat insulating material is used, the pipe heating occupation deposition can be reduced.

  (d) According to this embodiment, the jacket heater in the embodiment can be attached to the pipe by close contact with the molding material by gas pressurization, so that the attachment reproducibility can be improved.

  (e) According to this embodiment, when cleaning the exhaust pipe, which is maintenance, a highly corrosive gas is used, it is necessary to lower the pipe heating temperature. By continuing to exhaust the fluid in the internal space 315 of the enclosure 312 constituting the heater 310, the pipe temperature can be rapidly lowered. Thereby, the maintenance time can be shortened.

  (f) Since the pipe can be heated evenly at a temperature that does not liquefy according to the source gas for film formation, the gas flow rate can be stably transferred to the processing chamber at a temperature controlled so as not to cause liquefaction of the source gas. Can be supplied.

  (g) Since the reaction gas to be reacted with the source gas can be heated at a temperature controlled so as not to cause liquefaction of the source gas, the temperature of the source gas is lowered and liquefied when mixed. Thus, the source gas can be stably supplied into the processing chamber, the gas temperature in the processing chamber can be stabilized, and uniform film formation can be achieved.

  (h) Since the exhaust pipe can be heated uniformly to a predetermined temperature, adhesion of unreacted gas (unreacted source gas) residue and by-products during film formation can be suppressed.

  In this embodiment, an example in which both the gas pipe and the exhaust pipe are heated by the heater has been described. However, the present invention is not limited thereto, and either the gas pipe or the exhaust pipe may be heated by the heater.

  FIG. 6 shows a configuration in which the raw material supply unit 4 to the flow rate controller 41 are heated. However, the raw material supply unit 4 to the flow rate control unit 41 do not need to be heated at all times, and during unsteady operation. It is preferable to heat (maintenance, repair, etc.).

  As mentioned above, although embodiment and the Example of this invention were described concretely, this invention is not limited to the above-mentioned embodiment and Example, and can be variously changed in the range which does not deviate from the summary.

For example, in the above-described embodiment, an example in which disilane (Si ₂ H ₆ , abbreviation: DS) gas is used as the source gas has been described. However, the present invention is not limited to such an embodiment. For example, as the source gas, a halogen group-free inorganic silane source gas such as monosilane (SiH ₄ , abbreviation: MS) gas, trisilane (Si ₃ H ₈ , abbreviation: TS) gas, or the like can be used. Further, for example, as source gas, in addition to HCDS gas, monochlorosilane (SiH ₃ Cl, abbreviation: MCS) gas, dichlorosilane (SiH ₂ Cl ₂ , abbreviation: DCS) gas, trichlorosilane (SiHCl ₃ , abbreviation: TCS) Gas, tetrachlorosilane, that is, silicon tetrachloride (SiCl ₄ , abbreviation: STC) gas, inorganic halosilane source gas such as octachlorotrisilane (Si ₃ Cl ₈ , abbreviation: OCTS) gas, trisdimethylaminosilane (Si [N ( CH ₃ ) ₂ ] ₃ H, abbreviation: 3DMAS) gas, tetrakisdimethylaminosilane (Si [N (CH ₃ ) ₂ ] ₄ , abbreviation: 4DMAS) gas, bisdiethylaminosilane (Si [N (C ₂ H ₅ ) ₂ ] ₂ H _2, abbreviation: BDEAS) gas, Bicester fischeri butyl Minoshiran _{(SiH 2 [NH (C 4} H 9)] 2, abbreviated: BTBAS) may be used halogen group-free amino based such as a gas (amine) silane source gas.

For example, in the above-described embodiment, an example in which O ₃ gas is used as the reaction gas has been described. For example, an oxygen (O) -containing gas (oxidation gas) such as oxygen (O ₂ ) gas may be used. However, the present invention is not limited to such an embodiment. For example, as a reactive gas, in addition to NH ₃ gas, hydrogen nitride-based gas such as diazene (N ₂ H ₂ ) gas, hydrazine (N ₂ H ₄ ) gas, N ₃ H ₈ gas, or a gas containing these compounds Etc. can be used. As a reaction gas, triethylamine ((C ₂ H ₅ ) ₃ N, abbreviation: TEA) gas, diethylamine ((C ₂ H ₅ ) ₂ NH, abbreviation: DEA) gas, monoethylamine (C ₂ H ₅ NH ₂₎ , Abbreviation: MEA) gas such as ethylamine gas, trimethylamine ((CH ₃ ) ₃ N, abbreviation: TMA) gas, dimethylamine ((CH ₃ ) ₂ NH, abbreviation: DMA) gas, monomethylamine (CH ₃ NH) ₂ , abbreviation: MMA) methylamine gas such as gas can be used. As a reaction gas, an organic hydrazine-based gas such as trimethylhydrazine ((CH ₃ ) ₂ N ₂ (CH ₃ ) H, abbreviation: TMH) gas can be used.

  For example, in the above-described embodiment, an example in which a silicon-based insulating film such as a SiO film is formed has been described. However, the present invention is not limited to such an embodiment. For example, in the present invention, titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), tungsten (W) is formed on the wafer 200. Even when a film containing a metal element such as a metal film is formed, the present invention can be suitably applied.

  For example, in the present invention, a TiN film, a TiO film, a TiON film, a TiOCN film, a TiOC film, a TiCN film, a TiBN film, a TiBCN film, a ZrN film, a ZrO film, a ZrON film, a ZrOCN film, a ZrOC film, ZrCN film, ZrBN film, ZrBCN film, HfN film, HfO film, HfON film, HfOCN film, HfOC film, HfCN film, HfBN film, HfBCN film, TaN film, TaO film, TaON film, TaOCN film, TaOC film, TaCN film , TaBN film, TaBCN film, NbN film, NbO film, NbON film, NbOCN film, NbOC film, NbCN film, NbBN film, NbBCN film, AlN film, AlO film, AlON film, AlOCN film, AlOC film, AlCN film, AlBN Film, AlBCN film, MoN film, MoO film, MoON film, MoOCN film, MoOC , MOCN film, MoBN film, MoBCN film, WN film, WO film, WON film, WOCN film, WOC film, WCN film, WBN film, even in the case of forming the WBCN film or the like is suitably applicable. In addition to these, a film in which any of these elements is doped (added) with other elements, for example, a TiAlN film, a TaAlN film, a TiAlC film, a TaAlC film, a TiSiN film, a TiSiC film, etc. is also suitably applied. Is possible.

When forming a metal film, for example, titanium tetrachloride (TiCl ₄ ) gas, titanium tetrafluoride (TiF ₄ ) gas, zirconium tetrachloride (ZrCl ₄ ) gas, zirconium tetrafluoride (ZrF ₄ ) are used as source gases. Gas, hafnium tetrachloride (HfCl ₄ ) gas, hafnium tetrafluoride (HfF ₄ ) gas, tantalum pentachloride (TaCl ₅ ) gas, tantalum pentafluoride (TaF ₅ ) gas, niobium pentachloride (NbCl ₅ ) gas, niobium pentafluoride (NbF ₅₎ gas, aluminum trichloride (AlCl ₃₎ gas, aluminum trifluoride (AlF ₃₎ gas, molybdenum pentachloride (MoCl ₅₎ gas, Mo It can be used Bed Den pentafluoride (MoF ₅₎ Gas, tungsten hexachloride (WCl ₆₎ gas, a tungsten hexafluoride (WF ₆₎ inorganic metal source gas containing a metal element and a halogen element such as a gas. As the source gas, for example, an organic metal source gas containing carbon and a metal element such as trimethylaluminum (Al (CH ₃ ) ₃ , abbreviation: TMA) gas can be used. As the reaction gas, the same gas as that in the above-described embodiment can be used.

  That is, the present invention can be suitably applied when forming a film containing a predetermined element such as a semiconductor element or a metal element.

  In the above-described embodiment, an example in which a film is deposited on the wafer 2 has been described. However, the present invention is not limited to such an embodiment. For example, the present invention can also be suitably applied to the case where the wafer 2 or a film formed on the wafer 2 is subjected to a process such as an oxidation process, a diffusion process, an annealing process, and an etching process.

  In the embodiments, the vertical substrate processing apparatus for batch processing has been described. However, the present invention is not limited to this, and can be applied to a substrate processing apparatus for single wafer processing.

  The present invention is not limited to a semiconductor manufacturing apparatus that processes a semiconductor wafer such as the substrate processing apparatus according to the present embodiment, but can also be applied to an LCD (Liquid Crystal Display) manufacturing apparatus that processes a glass substrate. .

<Preferred embodiment of the present invention>
Hereinafter, preferred embodiments of the present invention will be additionally described.
(Appendix 1)
According to one aspect of the invention,
A processing chamber for processing a substrate; a gas supply system having a gas pipe for supplying a source gas into the processing chamber; an exhaust system having an exhaust pipe for discharging a gas containing the source gas from the processing chamber; and the gas pipe And a heating part (jacket heater) for heating the outer wall of at least one of the exhaust pipes,
The heating unit surrounds the outer periphery of the heating zone that heats the outer wall of the piping and the heating zone, has a space inside, and supplies the fluid to the space to supply the fluid to the direction of the piping. An enclosure configured to apply pressure to the
A substrate processing apparatus is provided.
(Appendix 2)
The substrate processing apparatus according to appendix 1, preferably,
And a gas supply / discharge portion for supplying / exhausting the gas into / from the enclosure and an opening / closing portion for opening / closing the gas supply / discharge portion, and closing the opening / closing portion provided on one of the supply / discharge portions. The opening / closing part provided on the other side of the discharge part is opened, and a predetermined medium is supplied to the enclosure part.
(Appendix 3)
The substrate processing apparatus according to appendix 2, preferably,
By supplying a fluid to the space, the heating unit is configured to heat the pipe in a state where a predetermined pressure or more is applied in a direction in which the heating zone is pressed against the pipe.
(Appendix 4)
The substrate processing apparatus according to appendix 3, preferably,
The heating of the heating unit is stopped, the supply / discharge unit is opened, and the fluid in the space is supplied / discharged in a state where the predetermined pressure is released.
(Appendix 5)
The substrate processing apparatus according to appendix 3 or appendix 4, preferably,
The heating unit is configured to adjust the temperature of the pipe during substrate processing and the temperature of the pipe during maintenance.
(Appendix 6)
The substrate processing apparatus according to appendix 1, preferably,
The member of the surrounding part is composed of a fluororesin sheet.
(Appendix 7)
The substrate processing apparatus according to appendix 1, preferably,
The heating unit is provided in a C shape.
(Appendix 8)
The substrate processing apparatus according to appendix 2, preferably,
The fluid is the atmosphere (Air).
(Appendix 9)
The substrate processing apparatus according to appendix 2, preferably,
The fluid is any one gas selected from the group consisting of N2, He, Ne, Ar, Cr, and Xe.
(Appendix 10)
The substrate processing apparatus according to appendix 2, preferably,
The material outside the enclosure is a material harder than the material inside the enclosure (the material in contact with the heating zone), and when supplied, the enclosure swells to the piping side. It is configured.
(Appendix 11)
The substrate processing apparatus according to appendix 1, preferably,
Further, a fixing portion provided in the enclosure portion for fixing the heating zone to the pipe is provided, and the fixing portion is a belt formed of a heat insulating member (for example, a belt using a snap button, a square tube belt, D tube belt) or Velcro tape or the like.

(Appendix 12)
According to another aspect of the invention,
A temperature control method for a pipe by a heating unit including a heating zone for heating an outer wall of the pipe, and an enclosure having a space inside and surrounding the outer periphery of the heating zone,
Heating the outer wall of the pipe to the first temperature by the heating zone in a state where pressure is applied in the direction of the pipe to the heating zone by supplying gas to the space;
Supplying and discharging gas in the space from the first temperature to a second temperature lower than the first temperature;
There is provided a temperature control method for piping.

(Appendix 13)
According to another aspect of the invention,
A heating zone for heating the outer wall of the pipe;
An enclosure that surrounds the outer periphery of the heating zone, has a space inside, and is configured to apply pressure in the direction of the piping to the heating zone by supplying a medium to the space;
A heating unit is provided.

(Appendix 14)
According to another aspect of the invention,
A member that surrounds the outer periphery of the heating zone that heats the outer wall of the pipe, has a space inside, and applies a pressure to the heating zone in the direction of the pipe by supplying a medium to the space is provided.

(Appendix 15)
According to another aspect of the invention,
A procedure for processing the substrate by supplying a source gas into the processing chamber via a gas pipe;
A procedure for discharging the gas containing the source gas from the processing chamber via an exhaust pipe;
Causing the computer to execute a heating zone that heats an outer wall of at least one of the gas piping and the exhaust piping, and a heating procedure that surrounds the outer periphery of the heating zone and has a space inside. A program or a computer-readable recording medium storing the program is provided.
(Appendix 16)
The program according to appendix 15, or a computer-readable recording medium storing the program,
A procedure for heating the pipe to the first temperature by the heating zone in a state where pressure is applied in the direction of the pipe to the heating zone by supplying gas to the space;
A procedure for supplying and discharging gas in the space from the first temperature to a second temperature lower than the first temperature;
Have

(Appendix 17)
According to another aspect of the invention,
A program for causing a computer to control the temperature of a pipe by a heating unit including a heating zone for heating the piping and an enclosure having a space inside and surrounding the heating zone, or a computer readable program storing the program A recording medium,
A procedure for heating the piping to the first temperature by the heating zone in a state where pressure is applied in the direction of the piping to the heating zone by supplying a fluid to the space;
A procedure for supplying and discharging gas in the space from the first temperature to a second temperature lower than the first temperature;
Or a recording medium storing the program.

(Appendix 18)
According to another aspect of the invention,
Supplying a source gas into the processing chamber via the gas pipe and processing the substrate;
Discharging the gas containing the source gas from the processing chamber via an exhaust pipe;
A heating section that includes a heating zone that heats the piping and an enclosure that surrounds the outer periphery of the heating zone and has a space inside, and an outer wall of at least one of the gas piping and the exhaust piping is Heating, and
Have
The heating step includes
A step of bringing the pipe to a first temperature by the heating zone in a state where pressure is applied in the direction of the pipe to the heating zone by supplying gas to the space;
Supplying and discharging gas in the space from the first temperature to a second temperature lower than the first temperature;
A method of manufacturing a semiconductor device having the above is provided.

(Appendix 19)
According to another aspect of the invention,
Supplying a source gas into the processing chamber via the gas pipe and processing the substrate;
Discharging the gas containing the source gas from the processing chamber via an exhaust pipe;
Heating the outer wall of at least one of the gas pipe and the exhaust pipe,
The outer wall of the pipe is heated by the heating zone in a state where pressure is applied in the direction of the pipe to the heating zone by supplying fluid to the space inside the enclosure that surrounds the outer periphery of the heating zone of the heating unit. Process,
A method of manufacturing a semiconductor device having the above is provided.

(Appendix 20)
According to another aspect of the invention,
Supplying a source gas into the processing chamber via the gas pipe and processing the substrate;
Discharging the gas containing the source gas from the processing chamber via an exhaust pipe;
Heating the outer wall of at least one of the gas pipe and the exhaust pipe,
The outer wall of the pipe is heated by the heating zone in a state where pressure is applied in the direction of the pipe to the heating zone by supplying fluid to the space inside the enclosure that surrounds the outer periphery of the heating zone of the heating unit. Process,
A method of heating a pipe having

(Appendix 21)
According to another aspect of the invention,
A procedure for processing a substrate by supplying a source gas into a processing chamber via a gas pipe;
A procedure for discharging the gas containing the source gas from the processing chamber via an exhaust pipe;
A procedure for heating an outer wall of at least one of the gas pipe and the exhaust pipe,
The outer wall of the pipe is heated by the heating zone in a state where pressure is applied in the direction of the pipe to the heating zone by supplying fluid to the space inside the enclosure that surrounds the outer periphery of the heating zone of the heating unit. Procedure and
Is provided, or a computer-readable recording medium storing the program.

DESCRIPTION OF SYMBOLS 1 ... Substrate processing apparatus 4 ... Gas supply device 5 ... Gas supply device 6 ... Gas piping 10 ... Gas piping 11 ... Gas piping 20 ... Exhaust piping heater 22 ... Gas piping heater 24 ... Gas piping heater 32 ... Flow rate controller 33 ... Flow rate controller 34 ... Valve 35 ... Valve 36 ... Valve 39 ... Valve 40 ... Gas piping 41 ... Flow rate controller 200 ... Wafer 201 ... Processing chamber 202 ... Processing furnace 203 ... Reaction tube 207 ... Heater 217 ... Boat 231 ... Gas Exhaust pipe 233 ... Nozzle 234 ... Nozzle 243 ... Pressure controller (APC valve)
246 ... Vacuum pump 300 ... Pipe 310 ... Heater 311 ... Heating zone 312 ... Enclosure 313 ... Split position 314 ... Belt 315 ... Space 316 ... Connection port 317 ... Connection port 318 ... Check valve 319 ... Check valve (or switching valve) )
321 ... Controller

Claims (5)

A processing chamber for processing the substrate;
A gas supply system having a gas pipe for supplying a raw material gas into the processing chamber;
An exhaust system having an exhaust pipe for discharging the gas containing the source gas from the processing chamber;
A heating unit for heating an outer wall of at least one of the gas pipe and the exhaust pipe;
With
The heating unit is
A heating zone for heating the outer wall of the pipe;
An enclosure that surrounds the outer periphery of the heating zone, has a space inside, and is configured to apply pressure to the heating zone in the direction of the piping by supplying fluid to the space;
A substrate processing apparatus comprising: A heating zone for heating the outer wall of the pipe;
An enclosure that surrounds the outer periphery of the heating zone, has a space inside, and is configured to apply pressure to the heating zone in the direction of the piping by supplying fluid to the space;
A heating section.   A member that surrounds the outer periphery of a heating zone that heats the outer wall of the piping, has a space inside, and applies a pressure to the heating zone in the direction of the piping by supplying fluid to the space. Supplying a source gas into the processing chamber via the gas pipe and processing the substrate;
Discharging the gas containing the source gas from the processing chamber via an exhaust pipe;
Heating the outer wall of at least one of the gas pipe and the exhaust pipe,
The outer wall of the pipe is heated by the heating zone in a state where pressure is applied in the direction of the pipe to the heating zone by supplying fluid to the space inside the enclosure that surrounds the outer periphery of the heating zone of the heating unit. Process,
A method for manufacturing a semiconductor device comprising: Supplying a source gas into the processing chamber via the gas pipe and processing the substrate;
Discharging the gas containing the source gas from the processing chamber via an exhaust pipe;
Heating the outer wall of at least one of the gas pipe and the exhaust pipe,
The outer wall of the pipe is heated by the heating zone in a state where pressure is applied in the direction of the pipe to the heating zone by supplying fluid to the space inside the enclosure that surrounds the outer periphery of the heating zone of the heating unit. Process,
A method for heating a pipe.

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