JP6488595B2 - Electron beam exposure mask and method of manufacturing electron beam exposure mask - Google Patents

Description

  The present invention relates to an electron beam exposure mask and an electron beam exposure mask manufacturing method, and one disclosed embodiment is an electron beam exposure mask in which an electron beam transmission portion is provided in a membrane region and an electron beam exposure mask. It relates to a manufacturing method.

  In recent years, in order to mass-produce integrated circuits such as semiconductor devices, patterns of integrated circuits have been miniaturized. If the line width of the fine pattern is smaller than the wavelength of the exposure light source, the light used for exposure is diffracted by the fine pattern and cannot be exposed as designed. Therefore, development of a charged particle beam exposure apparatus using an electron beam or an ion beam that is not diffracted by a pattern as an exposure light source is underway.

  A stencil-type transfer mask is used as a mask for a charged particle beam exposure apparatus. In the stencil-type mask, the membrane region (thin plate portion) is several μm thin, so the mechanical strength of the membrane region is low. Therefore, there arises a problem that the membrane region is deformed by the influence of the stress in the manufacturing process and the distortion of the substrate. In order to solve this problem, for example, Patent Document 1 discloses a structure in which a reinforcing portion having a larger film thickness than the vicinity of the opening is disposed in the membrane region.

Japanese Patent Laid-Open No. 08-178858

  However, the technique of Patent Document 1 requires a complicated process to form membrane regions having different thicknesses. As a result, the process becomes longer, resulting in problems such as an increase in manufacturing cost and a decrease in yield.

  In view of the above circumstances, an object of the present invention is to provide an electron beam exposure mask that can stably maintain the shape of a membrane region.

  An electron beam exposure mask according to an embodiment of the present invention is an electron beam exposure mask used in an exposure apparatus in which a plurality of electron beam exposure masks are arranged to overlap each other in the traveling direction of the electron beam. A thin plate part having a rectangular first transmission part and a second transmission part that transmit a line, and a non-transmission part that exists around the first transmission part and the second transmission part and blocks an electron beam; The thin plate portion has a substantially uniform thickness of 3 μm or more and 10 μm or less, and the shape of the thin plate portion in plan view is a substantially rectangular shape. The corner is round.

  According to the above-described electron beam exposure mask, it is possible to provide an electron beam exposure mask having a simple structure capable of stably maintaining the shape of the membrane region.

  In another aspect, the first transmission portion may have a rectangular aspect ratio of 30 or more in plan view.

  According to the above electron beam exposure mask, even in a pattern having a short side direction and a long side direction, even if the length in the long side direction is very long compared to the short side direction, patterning is performed at a time. be able to.

  In another aspect, the first transmission part and the second transmission part may have different aspect ratios in plan view.

  According to the above-mentioned electron beam exposure mask, patterns of various shapes can be realized with one electron beam exposure mask.

  In another aspect, the round shape may be a curved shape having a radius of curvature of 5 μm to 100 μm.

  According to the electron beam exposure mask, the stress applied to the thin plate portion can be relaxed, and a large number of transmission portions having a large planar aspect ratio can be arranged in one thin plate portion.

  In another aspect, the thin plate portion may be silicon.

  According to the above electron beam exposure mask, it is possible to realize a thin plate portion that is not easily distorted by stress.

  An electron beam exposure mask manufacturing method according to an embodiment of the present invention includes a transmission unit that transmits an electron beam and a transmission unit in an exposure apparatus in which a plurality of electron beam exposure masks are stacked in the traveling direction of the electron beam. A manufacturing method for manufacturing an electron beam exposure mask having a thin plate portion around a portion having a non-transmissive portion that blocks an electron beam and a frame-shaped support portion that supports the thin plate portion from a substrate. A pattern corresponding to the transmissive portion is formed in the region corresponding to the thin plate portion on the first surface side of the substrate, a resin layer covering the pattern is formed on the first surface side, and the substrate in the region corresponding to the thin plate portion is formed. The substrate is etched from the second surface side opposite to the first surface side to remove the resin layer so that the thickness becomes a substantially uniform thickness of 3 μm or more and 10 μm or less and the pattern becomes a transmission part.

  According to the above method for manufacturing an electron beam exposure mask, deformation of the membrane region can be suppressed in the manufacturing process.

  In another embodiment, the thickness of the resin layer may be 10 μm or more and 30 μm or less.

  According to the above method for manufacturing an electron beam exposure mask, the substrate can be prevented from being distorted during the etching process of the support substrate, and a pattern that later becomes a transmission portion can be protected.

  In another aspect, the substrate is an SOI substrate having a support substrate, a first silicon oxide layer disposed on the support substrate, and a silicon layer disposed on the first silicon oxide layer, and the thin plate portion May be formed in the silicon layer.

  According to the above method for manufacturing an electron beam exposure mask, each layer can be etched using the difference in etching rate between the support substrate, the first silicon oxide layer, and the silicon layer. It can be controlled with high accuracy.

  In another aspect, a second silicon oxide layer is formed on the second surface side of the SOI substrate before etching the substrate from the second surface side, and the second region of the region corresponding to the thin plate portion is formed from the second surface side. The silicon dioxide layer and the supporting substrate may be etched until reaching the first silicon oxide layer, and the second silicon oxide layer and the first silicon oxide layer in the region corresponding to the thin plate portion may be etched in the same process.

  According to the above method for manufacturing an electron beam exposure mask, the process can be further shortened.

  According to the present invention, it is possible to provide an electron beam exposure mask having a simple structure capable of stably maintaining the shape of the membrane region.

It is sectional drawing and the top view which show the outline | summary of the mask for electron beam exposure which concerns on Embodiment 1 of this invention. It is a process flow which shows the manufacturing method of the mask for electron beam exposure which concerns on Embodiment 1 of this invention. It is sectional drawing which shows the process of forming a hard mask in the front and back of a board | substrate in the manufacturing method of the mask for electron beam exposure which concerns on Embodiment 1 of this invention. In the manufacturing method of the electron beam exposure mask which concerns on Embodiment 1 of this invention, it is sectional drawing which shows the process of forming a resist mask on the surface. It is sectional drawing which shows the process of etching the hard mask of the surface in the manufacturing method of the mask for electron beam exposure which concerns on Embodiment 1 of this invention. It is sectional drawing which shows the process of etching the surface silicon layer in the manufacturing method of the mask for electron beam exposure which concerns on Embodiment 1 of this invention. It is sectional drawing which shows the process of removing the resist mask of the surface in the manufacturing method of the mask for electron beam exposure which concerns on Embodiment 1 of this invention. It is sectional drawing which shows the process of forming the resin layer in the surface in the manufacturing method of the mask for electron beam exposure which concerns on Embodiment 1 of this invention. In the manufacturing method of the electron beam exposure mask which concerns on Embodiment 1 of this invention, it is sectional drawing which shows the process of forming a resist mask in the back surface. It is sectional drawing which shows the process of etching the hard mask of a back surface in the manufacturing method of the mask for electron beam exposure which concerns on Embodiment 1 of this invention. It is sectional drawing which shows the process of etching a support substrate in the manufacturing method of the mask for electron beam exposure which concerns on Embodiment 1 of this invention. It is sectional drawing which shows the process of removing the resist mask of a back surface in the manufacturing method of the mask for electron beam exposure which concerns on Embodiment 1 of this invention. It is sectional drawing which shows the process of removing the hard mask of a box layer and front and back in the manufacturing method of the mask for electron beam exposure which concerns on Embodiment 1 of this invention. It is a top view which shows the outline | summary of the mask for electron beam exposure which concerns on the modification of Embodiment 1 of this invention.

  Hereinafter, an electron beam exposure mask and an electron beam exposure mask manufacturing method according to embodiments of the present invention will be described in detail with reference to the drawings. In addition, embodiment shown below is an example of embodiment of this invention, This invention is limited to these embodiment, and is not interpreted. Note that in the drawings referred to in this embodiment, the same portions or portions having similar functions are denoted by the same reference symbols or similar symbols, and repeated description thereof may be omitted. In addition, the dimensional ratio in the drawing may be different from the actual ratio for convenience of explanation, or a part of the configuration may be omitted from the drawing.

<Embodiment 1>
An electron beam exposure mask according to Embodiment 1 of the present invention will be described in detail with reference to FIG. FIG. 1 is a cross-sectional view and a plan view showing an outline of an electron beam exposure mask according to Embodiment 1 of the present invention. In FIG. 1, an SOI substrate in which a silicon oxide layer (buried silicon oxide layer; also referred to as a box layer) is arranged on a single crystal silicon substrate and a thin single crystal silicon layer is arranged on the silicon oxide layer is used as a substrate. A structure in which a single crystal silicon layer of an SOI substrate is provided with a membrane region (thin plate portion) will be described. However, the substrate is not limited to the SOI substrate, and various other substrates can be used.

[Configuration of electron beam exposure mask]
The electron beam exposure mask 10 according to the first embodiment of the present invention is used in a CP (Character Projection or Cell Projection) type exposure apparatus that registers a figure often used as an integrated circuit pattern as a collection of apertures of the apparatus. The In the CP method, the electron beam exposure mask 10 is arranged such that a plurality of electron beam exposure masks are stacked in the traveling direction of the electron beam.

  As shown in FIG. 1, the electron beam exposure mask 10 includes a plurality of rectangular transmissive parts 110 that transmit electron beams, and a non-transmissive part 120 that exists around the transmissive parts 110 and blocks electron beams. And a frame-shaped support portion 200 that supports the thin plate portion 100. Here, the thin plate portion 100 has a substantially uniform thickness of 3 μm to 10 μm. Here, “substantially uniform” means that the variation in the thickness of the thin plate portion 100 is within a range of ± 10%, more preferably within a range of ± 5% with respect to the thickness of the thin plate portion 100. Moreover, the shape in planar view of the thin plate part 100 prescribed | regulated by the boundary of the support part 200 and the thin plate part 100 is a substantially rectangular shape, and the corner | angular part of a substantially rectangular shape is round shape. In other words, the shape of the thin plate portion 100 in a plan view is an annular shape formed by four curves that smoothly connect four straight lines that form four sides of a rectangle and straight lines that form adjacent sides. Said round shape is good in it being a curve shape whose curvature radius is 5 micrometers or more and 100 micrometers or less. In order to avoid stress concentration on the corner portion of the substantially rectangular shape of the thin plate portion 100, it is preferable that the radius of curvature of the round shape is a curved shape of 10 μm or more and 50 μm or less. Further, the radius of curvature of the round shape may be a curved shape that is 1/20 or more and 1/5 or less of the length in the long side direction or the length in the short side direction of the substantially rectangular shape of the thin plate portion 100.

  Here, the thin plate portion 100 has a single crystal silicon layer 130 of an SOI substrate. The support portion 200 includes a single crystal silicon layer 130, a box layer 140, and a support substrate 150 that are SOI substrates. The transmissive portion 110 corresponds to an opening provided so as to penetrate the front and back surfaces of the single crystal silicon layer 130, and the non-transmissive portion 120 corresponds to the single crystal silicon layer 130. The box layer 140 includes silicon oxide, and the support substrate 150 includes single crystal silicon.

  Moreover, it is preferable that the thin plate portion 100 has a certain rigidity or more in order to maintain the mechanical strength. For example, the thin plate portion 100 may have a Young's modulus of 100 GPa or more. Further, at the time of exposure, there is a possibility that many electron beams collide with the non-transmissive portion 120 of the thin plate portion 100 and the temperature of the thin plate portion 100 rises, resulting in a dimensional variation of the non-transmissive portion close to the transmissive portion. For this reason, it is preferable that the thin plate portion 100 has a certain thermal conductivity. For example, it is good to have a thermal conductivity of 100 W / mK or more in an environment of 100 ° C.

  The transmission part 110 provided in the thin plate part 100 may have a rectangular aspect ratio (planar aspect ratio) of 30 or more in plan view. Preferably, the planar aspect ratio may be 50 or more. More preferably, the planar aspect ratio may be 100 or more. The aspect ratio is a value obtained by dividing the long side of the figure of the opening in plan view by the short side. When the opening is a figure other than a rectangle, a rectangle circumscribing the opening is defined, and the aspect ratio is derived from the long side and the short side. The electron beam exposure mask 10 is a pattern that has the above-described plane aspect ratio, and has a length in the long side direction that is much longer than the short side direction in the pattern having the short side direction and the long side direction. Can also be patterned at once.

  In addition, the positions of the single crystal silicon layer 130 and the transmissive portion 110 are set so that the long side and the short side of the rectangular shape of the transmissive portion 110 are parallel to the (111) plane or the (110) plane of the single crystal silicon layer 130. It may be adjusted. Since single crystal silicon is easily cleaved along the (111) plane or the (110) plane, the transmissive portion 110 can be formed in the single crystal silicon layer 130 more accurately and accurately.

  As described above, according to the electron beam exposure mask according to the first embodiment of the present invention, the thin plate portion 100 has a substantially uniform thickness of 3 μm or more and 10 μm or less, thereby simplifying the thin plate portion with a certain level or more of rigidity. Can be formed. Further, since the thin plate portion has a round shape in plan view, the stress applied to the thin plate portion can be relaxed. In addition, since a plurality of rectangular transmission portions are provided in one thin plate portion, various patterns can be exposed with one electron beam exposure mask. Therefore, it is possible to provide an electron beam exposure mask having a simple structure capable of stably maintaining the shape of the thin plate portion (membrane region).

[Method of manufacturing a mask for electron beam exposure]
A method for manufacturing an electron beam exposure mask according to the first embodiment of the present invention will be described with reference to FIGS. FIG. 2 shows a process flow of the electron beam exposure mask, and FIGS. 3 to 13 show sectional views of the electron beam exposure mask in each process flow of FIG. In the following description, for convenience of explanation, the upper side of the drawing is called the front side of the substrate, and the lower side of the drawing is called the back side of the substrate.

  First, a substrate for forming an electron beam exposure mask is prepared (step S201). Here, as a substrate, a support substrate 150, a box layer 140 containing silicon oxide disposed on the support substrate 150, a single crystal silicon layer having a thickness of 3 μm to 10 μm disposed on the box layer 140, An SOI substrate having is prepared. However, the substrate to be prepared is not limited to the SOI substrate. For example, a silicon substrate, a silicon compound substrate such as silicon carbide, a compound semiconductor substrate such as gallium arsenide, and a metal substrate such as stainless steel or aluminum can be used. Moreover, these may be laminated.

  Although there is no restriction | limiting in particular in the thickness of a board | substrate, For example, the board | substrate of thickness 100 micrometers or more and 800 micrometers or less can be used. The thickness of the substrate is preferably 200 μm or more and 400 μm or less in consideration of workability. As the substrate becomes thinner, the deflection of the substrate increases. As a result, handling in the manufacturing process becomes difficult, and when the substrate is processed to form an electron beam exposure mask, the substrate is distorted by internal stress, and the thin plate portion 100 is deformed by the influence. On the other hand, when the substrate becomes thick, the process of etching the support substrate 150 becomes longer. As a result, the manufacturing process becomes longer and the manufacturing cost also increases.

  Next, a hard mask is formed on the front and back surfaces of the substrate (step S202). Here, the cross-sectional structure of the substrate in step S202 is shown in FIG. As shown in FIG. 3, a front surface hard mask 300 is formed on the single crystal silicon layer 130, and a back surface hard mask 310 is formed on the support substrate 150. As the front and back hard masks 300 and 310, for example, a metal material such as silicon oxide, chromium, or aluminum can be used. The material used as the hard mask can be selected so that the box layer 140 and the hard mask can be etched with the same etchant. Hereinafter, a process using the same silicon oxide as the box layer 140 as the hard mask will be described.

  Next, a surface resist mask 320 is formed on the surface hard mask 300 (step S203). Here, the cross-sectional structure of the substrate in step S203 is shown in FIG. As shown in FIG. 4, the surface resist mask 320 formed on the surface hard mask 300 has an opening 321 at a position corresponding to the transmission portion 110 of the electron beam exposure mask.

Next, the surface hard mask 300 is etched (step S204). Here, the cross-sectional structure of the substrate in step S204 is shown in FIG. As shown in FIG. 5, the surface hard mask 300 at a position corresponding to the opening 321 of the surface resist mask 320 is removed to form the opening 301. The surface hard mask 300 can be etched by wet etching or dry etching. When the surface hard mask 300 that is silicon oxide is etched by wet etching, hydrofluoric acid or a chemical solution containing hydrofluoric acid can be used as an etchant. On the other hand, when the surface hard mask 300 made of silicon oxide is etched by dry etching, dry etching using trifluoromethane (CHF ₃ ) gas or hexafluoroethane (C ₂ F ₆ ) gas can be performed. Since dry etching has anisotropy, a pattern having a size almost as designed can be formed.

  Next, the single crystal silicon layer 130 is etched (step S205). Here, the cross-sectional structure of the substrate in step S205 is shown in FIG. As shown in FIG. 6, the single crystal silicon layer 130 at a position corresponding to the opening 321 of the surface resist mask 320 and the opening 301 of the surface hard mask 300 is etched, and then the transmissive part 110 of the electron beam exposure mask and A pattern 131 is formed. In other words, the pattern 131 corresponding to the transmissive portion 110 is formed in the region corresponding to the thin plate portion 100 of the electron beam exposure mask on the surface side of the substrate.

  The single crystal silicon layer 130 can be etched by wet etching or dry etching. When the single crystal silicon layer 130 is etched by wet etching, an aqueous KOH solution, ethylenediamine / pyrocatechol (EDP), or 4-methylammonium hydroxide (TMAH) can be used. On the other hand, when the single crystal silicon layer 130 is etched by dry etching, dry etching using carbon tetrafluoride (CF4), sulfur hexafluoride (SF6), or hydrogen bromide (HBr) can be performed.

  Next, the surface resist mask 320 is removed (step S206). Here, the cross-sectional structure of the substrate in step S206 is shown in FIG. For removing the resist, an organic solvent may be used, or ashing such as oxygen plasma treatment may be used. Here, after removing the resist, the substrate may be dried by IPA drying.

  Here, in the process flow of FIG. 2, the etching of the single crystal silicon layer 130 is performed in a state where the surface resist mask 320 is arranged, and after the pattern 131 is formed on the single crystal silicon layer 130, the surface resist mask 320 is removed. However, the surface resist mask 320 may be removed before the pattern 131 is formed, and the single crystal silicon layer 130 may be etched using only the surface hard mask 300 as a mask.

  Next, a resin layer 330 that covers the pattern 131 is formed on the surface side of the substrate (step S207). Here, the cross-sectional structure of the substrate in step S207 is shown in FIG. As shown in FIG. 8, the resin layer 330 is formed over the entire area of the substrate, but the resin layer 330 is at least formed in a region corresponding to the thin plate portion 100 when the electron beam exposure mask is completed. Good. As the resin layer 330, resins used as various resists can be used.

  Here, the resin layer 330 is used for the purpose of protecting the surface of the pattern 131, and for the purpose of suppressing distortion when the support substrate 150 is etched in order to form the thin plate portion 100 in a later process, or the distortion of the substrate after the formation. It is formed for the purpose of suppressing. Therefore, the resin layer 330 is preferably formed with a thickness sufficient to obtain a certain rigidity. Specifically, the thickness of the resin layer 330 is preferably 10 μm or more and 30 μm or less.

  The resin layer 330 is cured by forming a solution of a resin material dissolved in a solvent by a coating method such as a spin coating method and performing a heat treatment. The thickness of the resin layer 330 can be controlled by adjusting the viscosity of the solution by adjusting the concentration of the resin material and additives, and further adjusting the rotation speed of the substrate during application of the solution. When a desired thickness cannot be obtained by a single application, the application and curing may be repeated a plurality of times until the resin layer has the desired thickness.

  Next, a back resist mask 340 is formed on the back hard mask 310 (step S208). Here, the cross-sectional structure of the substrate in step S208 is shown in FIG. As shown in FIG. 9, the back resist mask 340 formed on the back hard mask 310 has an opening 341 at a location corresponding to the thin plate portion 100 of the electron beam exposure mask.

  Next, the back hard mask 310 is etched (step S209). Here, the cross-sectional structure of the substrate in step S209 is shown in FIG. As shown in FIG. 10, the back surface hard mask 310 at a position corresponding to the opening 341 of the back surface resist mask 340 is removed to form an opening 311. The back surface hard mask 310 can be etched by wet etching or dry etching. Here, the wet etching and the dry etching can be performed under the same conditions as the etching of the surface hard mask 300 in step S204.

  Next, the support substrate 150 is etched (step S210). Here, the cross-sectional structure of the substrate in step S210 is shown in FIG. As shown in FIG. 11, the opening 151 is formed by etching the support substrate 150 at a position corresponding to the opening 341 of the back resist mask 340 and the opening 311 of the back hard mask 310 until at least the box layer 140 is reached. Etching of the support substrate 150 can be performed by wet etching or dry etching. Here, wet etching and dry etching can be performed under the same conditions as the etching of the single crystal silicon layer 130 in step S205.

  Next, the resin layer 330 and the back surface resist mask 340 are removed (step S211). Here, the cross-sectional structure of the substrate in step S211 is shown in FIG. The removal of the resin layer 330 and the backside resist mask 340 may use an organic solvent, or may use ashing such as oxygen plasma treatment. The removal of the resin layer 330 and the back surface resist mask 340 may be performed in the same process, or may be performed in different processes.

As the organic solvent, for example, a registry mover can be used. After removing the resin layer 330 and the back surface resist mask 340 using a registry mover, the organic matter remaining on the exposed surface hard mask 300, the back surface hard mask 310, and the box layer 140 exposed inside the opening 151 is removed. You may perform SPM washing | cleaning in order to remove. SPM cleaning is also referred to as sulfuric acid hydrogen peroxide cleaning, and uses a chemical solution mixed at H ₂ O ₂ : H ₂ SO ₄ = 3: 1 by heating to 70 ° C. to 80 ° C., and has a strong oxidizing action. It is a cleaning method that is effective in removing organic substances. After the SPM cleaning, the substrate may be dried by IPA drying.

  Next, the front surface hard mask 300, the back surface hard mask 310, and the box layer 140 exposed inside the opening 151 are removed (step S212). Here, the cross-sectional structure of the substrate in step S212 is shown in FIG. Here, the removal of the front hard mask 300, the back hard mask 310, and the box layer 140 exposed inside the opening 151 may all be performed in the same process, and the front hard mask 300, the back hard mask 310, and the opening may be performed. The box layer 140 exposed inside the portion 151 may be performed in separate steps. The above steps can be performed by wet etching or dry etching. Here, the wet etching and the dry etching can be performed under the same conditions as the etching of the surface hard mask 300 in step S204.

  By the step S212, the single crystal silicon layer 130 having a thickness of 3 μm or more and 10 μm or less remains, and the thin plate portion 100 is formed. It can also be said that the substrate is etched from the back side by combining the two steps of etching the support substrate 150 in step S210 and etching the box layer 140 in step S212. That is, in step S210 and step S212, the substrate in the region corresponding to the thin plate portion 100 has a substantially uniform thickness of 3 μm or more and 10 μm or less, and the pattern 131 formed in the single crystal silicon layer 130 becomes the transmission portion 110. It can be said that the substrate is etched from the back side.

Next, the substrate in the state shown in FIG. 13 is cleaned (step S213). The cleaning in step S213 can be SPM cleaning, APM cleaning, and hydrofluoric acid cleaning. Further, after cleaning, the substrate may be dried by IPA drying. Here, APM cleaning is also referred to as ammonia hydrogen peroxide water cleaning, and a chemical solution mixed with ammonia (NH ₄ OH): H ₂ O ₂ : H ₂ O = 1: 2: 5 is heated to 70 ° C. to 80 ° C. This cleaning method is effective in removing organic substances and insoluble particles.

  Then, an inspection of the finally completed substrate (electron beam exposure mask) is performed (step S214). The substrate can be inspected by using an optical microscope in a reflection mode for detecting light reflected by the substrate out of inspection light irradiated on the substrate and a transmission mode for detecting inspection light transmitted through the substrate. it can. As another method, an electron microscope (SEM: Scanning Electron Microscope) may be used to inspect the substrate with a higher magnification image than the optical microscope.

  As described above, according to the method for manufacturing an electron beam exposure mask according to the first embodiment of the present invention, when the support substrate 150 is etched from the back surface side, the resin layer 330 is formed on the front surface side. Can suppress the distortion of the substrate. As a result, deformation of the shape of the thin plate portion 100 can be suppressed. That is, deformation of the thin plate portion can be suppressed in the manufacturing process.

<Modification of Embodiment 1>
An electron beam exposure mask according to a modification of the first embodiment of the present invention will be described in detail with reference to FIG. FIG. 14 is a plan view showing an outline of an electron beam exposure mask according to a modification of the first embodiment of the present invention. The cross-sectional structure of the electron beam exposure mask 11 shown in FIG. 14 can be the same as the cross-sectional structure of the electron beam exposure mask 10 shown in FIG.

  As shown in FIG. 14, the electron beam exposure mask 11 includes a first transmission part 400, a second transmission part 410, a third transmission part 420, and a fourth transmission part 430 having different shapes. Here, the first transmission unit 400 and the second transmission unit 410 have different planar aspect ratios in plan view. In addition, the third transmission part 420 and the fourth transmission part 430 have a pseudo hollow structure in which the non-transmission parts 421 and 431 are supported by the support members 422 and 432, respectively.

  As described above, according to the electron beam exposure mask according to Embodiment 1 of the present invention, a plurality of transmission portions having different shapes can be provided on one thin plate portion. Therefore, since many combinations of patterns can be realized with one electron beam exposure mask, the cost required for the electron beam exposure mask can be reduced, and electron beam exposure can be performed when forming different patterns. Since it is not necessary to replace the mask for manufacturing, the process can be shortened and the manufacturing cost can be reduced.

  Note that the present invention is not limited to the above-described embodiment, and can be modified as appropriate without departing from the spirit of the present invention.

10, 11: Mask for electron beam exposure 100: Thin plate portion 110: Transmission portion 120: Non-transmission portion 130: Single crystal silicon layer 131: Pattern 140: Box layer 150: Support substrate 151, 301, 311, 321, 341: Opening Part 200: Supporting part 300: Front hard mask 310: Back hard mask 320: Front resist mask 330: Resin layer 340: Back resist mask 400: First transmission part 410: Second transmission part 420: Third transmission parts 421 and 431 : Hollow structure 422, 432: Support member 430: Fourth transmission part

Claims (8)

An electron beam exposure mask used in an exposure apparatus in which a plurality of electron beam exposure masks are stacked in the traveling direction of the electron beam,
A thin plate having a rectangular first transmissive portion and second transmissive portion that transmits the electron beam, and a non-transmissive portion that is present around the first transmissive portion and the second transmissive portion and blocks the electron beam. And
A frame-like support part for supporting the thin plate part;
Have
The thin plate portion has a substantially uniform thickness of 3 μm or more and 10 μm or less,
The shape of the thin plate portion in plan view is a substantially rectangular shape, and the corner portion of the substantially rectangular shape has a round shape with a radius of curvature of 10 μm or more and 50 μm or less .   2. The electron beam exposure mask according to claim 1, wherein the first transmission portion has an aspect ratio of the rectangular shape in a plan view of 30 or more.   3. The electron beam exposure mask according to claim 1, wherein the first transmission part and the second transmission part have different aspect ratios in plan view. The electron beam exposure mask according to any one of claims 1 to 3 , wherein the thin plate portion is made of silicon. In an exposure apparatus in which a plurality of electron beam exposure masks are stacked in the traveling direction of the electron beam, a transmissive portion that transmits the electron beam, and a non-transmissive portion that exists around the transmissive portion and blocks the electron beam A manufacturing method for manufacturing an electron beam exposure mask having a thin plate portion and a frame-shaped support portion for supporting the thin plate portion from a substrate,
On the first surface side of the substrate, a pattern corresponding to the transmission portion is formed in a region corresponding to the thin plate portion,
Forming a resin layer covering the pattern on the first surface side;
In the thin plate portion in which the substrate in the region corresponding to the thin plate portion has a substantially uniform thickness of 3 μm or more and 10 μm or less and the corner portion of the substantially rectangular shape is round shape in plan view, the radius of curvature of the round shape is Etching the substrate from the second surface side opposite to the first surface side, so that the pattern becomes the transmissive portion in a range of 10 μm to 50 μm,
A method for producing an electron beam exposure mask, comprising removing the resin layer. 6. The method of manufacturing an electron beam exposure mask according to claim 5 , wherein the resin layer has a thickness of 10 to 30 [mu] m. The substrate is an SOI substrate having a support substrate, a first silicon oxide layer disposed on the support substrate, and a silicon layer disposed on the first silicon oxide layer,
The method for manufacturing an electron beam exposure mask according to claim 5 , wherein the thin plate portion is formed in the silicon layer. Before etching the substrate from the second surface side, a second silicon oxide layer is formed on the second surface side of the SOI substrate;
Etching the second silicon oxide layer and the support substrate in the region corresponding to the thin plate portion from the second surface side until reaching the first silicon oxide layer,
8. The method of manufacturing an electron beam exposure mask according to claim 7 , wherein the second silicon oxide layer and the first silicon oxide layer in a region corresponding to the thin plate portion are etched in the same step.

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