JP6489475B2 - Substrate processing equipment - Google Patents

Description

  The present invention relates to a substrate processing apparatus for processing a substrate. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomasks. Substrate, ceramic substrate, solar cell substrate and the like.

  Patent Document 1 discloses a single-wafer type substrate processing apparatus that processes substrates such as semiconductor wafers one by one. The substrate processing apparatus includes a spin chuck that rotates while holding the substrate horizontally, and a nozzle that discharges a processing solution having a temperature higher than room temperature toward the center of the upper surface of the substrate held by the spin chuck. . The high-temperature processing liquid discharged from the nozzle is deposited on the center of the upper surface of the substrate and then flows outward along the upper surface of the rotating substrate. Thereby, a high-temperature processing liquid is supplied to the entire upper surface of the substrate.

JP 2006-344907 A

  The processing liquid that has reached the center of the upper surface of the rotating substrate flows from the center to the peripheral edge along the upper surface of the substrate. In the process, the temperature of the treatment liquid gradually decreases. For this reason, the uniformity of temperature is lowered, and the uniformity of processing is deteriorated. If the flow rate of the processing liquid discharged from the nozzle is increased, the time until the processing liquid reaches the peripheral edge of the upper surface of the substrate is shortened, so that the temperature drop of the processing liquid is reduced. Consumption will increase.

  Accordingly, one of the objects of the present invention is to improve the processing uniformity while reducing the consumption of the processing liquid supplied to the substrate.

In order to achieve the above object, the invention according to claim 1 is directed to a substrate holding unit that rotates around a vertical rotation axis passing through a central portion of the substrate while holding the substrate horizontally, and a processing liquid to the substrate holding unit. A substrate processing apparatus including a processing liquid supply system for supplying a substrate to a held substrate.
The processing liquid supply system includes an upstream heater, a supply flow path, a plurality of upstream flow paths, a plurality of discharge ports, and a plurality of low-temperature liquid flow paths. The upstream heater heats the high temperature liquid supplied to the supply flow path. The supply channel guides the high temperature liquid toward the plurality of upstream channels. Wherein the plurality of upstream channel comprises an outer upstream flow channel and the plurality of inner upstream passage, wherein is branched from the supply passage, the hot liquid supplied from the supply passage to said plurality of outlets I will guide you. The plurality of discharge ports are connected to the outer upstream flow path, connected to the outer discharge ports for discharging the processing liquid toward the upper surface peripheral edge of the substrate, and the plurality of inner upstream flow paths, A plurality of inner discharge ports that discharge the processing liquid toward a plurality of positions in the upper surface of the substrate, which are inside the peripheral edge of the upper surface, respectively, and are arranged at a plurality of positions at different distances from the rotation axis. The processing liquid supplied through the plurality of upstream flow paths is discharged toward the upper surface of the substrate. The plurality of low-temperature liquid channels are connected to only the plurality of inner upstream channels at positions upstream from the plurality of inner discharge ports, and are the same type of liquid as the high-temperature liquid flowing through the supply channel. The low temperature liquid having a temperature lower than that of the high temperature liquid is guided only to the plurality of inner upstream flow paths, the high temperature liquid is guided from the outer discharge port, and the plurality of inner sides from the plurality of inner discharge ports. The mixed liquid of the high temperature liquid and the low temperature liquid mixed in the upstream flow path is discharged as the processing liquid toward the upper surface of the substrate .

  According to this invention, the supply flow path for guiding the processing liquid is branched into a plurality of upstream flow paths. Thereby, the number of discharge ports can be increased. The processing liquid flowing in the supply flow path is supplied to the discharge port via the upstream flow path, and is discharged toward the upper surface of the substrate that rotates around the rotation axis. The plurality of discharge ports are respectively arranged at a plurality of positions having different distances from the rotation axis. Accordingly, the uniformity of the temperature of the processing liquid on the substrate can be improved as compared with the case where the processing liquid is discharged to only one discharge port. Thereby, the processing uniformity can be improved while reducing the consumption of the processing liquid.

  When the processing liquid is hotter than the substrate, the heat of the processing liquid is taken away by the substrate. Further, since the processing liquid rotates together with the substrate, the processing liquid on the substrate flows outward along the upper surface of the substrate while being cooled by air. The peripheral speed of each part of the substrate increases with distance from the rotation axis. The processing liquid on the substrate is easily cooled as the peripheral speed increases. Further, assuming that the upper surface of the substrate can be divided into a plurality of annular regions at equal intervals in the radial direction, the area of each region increases as the distance from the rotation axis increases. When the surface area is large, heat easily moves from the treatment liquid to the annular region. For this reason, if the temperatures of the processing liquids discharged from the discharge ports are all the same, sufficient temperature uniformity may not be obtained.

  According to the present invention, the low temperature liquid is supplied to the plurality of inner upstream flow paths and mixed with the high temperature liquid flowing through these inner upstream flow paths. A low temperature liquid is the same kind of liquid as a high temperature liquid, and temperature is lower than a high temperature liquid. Therefore, while the high temperature liquid is discharged from the outer discharge port, the liquid having a temperature lower than that of the high temperature liquid (mixed liquid of the high temperature liquid and the low temperature liquid) is discharged from the plurality of inner discharge ports. As a result, the temperature of the processing liquid supplied to the upper surface of the substrate increases stepwise as it moves away from the rotation axis. Therefore, compared with the case where the processing liquid of the same temperature is discharged to each discharge port, the uniformity of the temperature of the processing liquid on a board | substrate can be improved. Thereby, the processing uniformity can be improved while reducing the consumption of the processing liquid.

According to a second aspect of the present invention, the processing liquid supply system further includes a plurality of temperature sensors and a mixing ratio changing unit, and the plurality of temperature sensors are respectively connected to the plurality of inner upstream flow paths. And detecting the temperature of the mixed liquid in the plurality of inner upstream flow paths, and the mixing ratio changing unit detects the temperature in the plurality of inner upstream flow paths based on the temperatures detected by the plurality of temperature sensors. The substrate processing apparatus according to claim 1, wherein a mixing ratio of the high-temperature liquid and the low-temperature liquid to be mixed is changed independently for each inner upstream flow path.

  According to this invention, the temperature of the liquid flowing through the plurality of inner upstream channels is detected in each inner upstream channel by the plurality of temperature sensors. The mixing ratio changing unit independently changes the mixing ratio of the high temperature liquid and the low temperature liquid mixed in the plurality of inner upstream flow paths for each inner upstream flow path based on the detection values of the plurality of temperature sensors. Therefore, the temperature of the liquid mixture supplied from the plurality of inner upstream flow paths to the plurality of inner discharge ports can be brought closer to the set temperature more precisely.

  According to a third aspect of the present invention, the mixing ratio changing unit is connected to the plurality of inner upstream flow paths at positions upstream of the plurality of low temperature liquid flow paths, and is mixed with the low temperature liquid. A plurality of first flow rate adjustment valves that independently adjust the flow rate of the liquid for each of the inner upstream flow paths and the plurality of low temperature liquid flow paths, respectively, and the flow rate of the low temperature liquid mixed with the high temperature liquid The substrate processing apparatus according to claim 2, comprising at least one of a plurality of second flow rate adjustment valves that are independently adjusted for each of the low-temperature liquid flow paths.

It is a mimetic diagram showing a processing liquid supply system of a substrate processing apparatus concerning one embodiment of the present invention, and shows a processing liquid supply system in a discharge state. It is a mimetic diagram showing a processing liquid supply system of a substrate processing apparatus concerning one embodiment of the present invention, and shows a processing liquid supply system in a discharge stop state. It is a typical front view which shows the inside of the processing unit with which the substrate processing apparatus was equipped. It is a typical top view which shows the inside of the processing unit with which the substrate processing apparatus was equipped. It is a typical front view showing a plurality of nozzles. It is a typical top view showing a plurality of nozzles. It is process drawing for demonstrating an example of the process of the board | substrate performed with a substrate processing apparatus. It is a graph which shows distribution of the etching amount of a board | substrate. It is a typical top view showing a plurality of nozzles concerning the 1st modification of the embodiment. It is a mimetic diagram showing a plurality of nozzles concerning the 2nd modification of the embodiment. FIG. 10A is a schematic front view showing a plurality of nozzles, and FIG. 10B is a schematic plan view showing the plurality of nozzles. It is a graph which shows the image of the thickness of the thin film before and behind a process, and the temperature of the process liquid supplied to a board | substrate.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
1 and 2 are schematic views showing a processing liquid supply system of a substrate processing apparatus 1 according to an embodiment of the present invention. FIG. 1 shows a processing liquid supply system in a discharge state, and FIG. 2 shows a processing liquid supply system in a discharge stop state.
The substrate processing apparatus 1 is a single-wafer type apparatus that processes a disk-shaped substrate W such as a semiconductor wafer one by one. The substrate processing apparatus 1 includes a processing unit 2 that processes a substrate W with a processing liquid, a transfer robot (not shown) that transfers the substrate W to the processing unit 2, and a control device 3 that controls the substrate processing apparatus 1. . The control device 3 is a computer including a calculation unit and a storage unit.

  The substrate processing apparatus 1 includes a plurality of fluid boxes 5 that contain a fluid device such as a valve 51 that controls supply and stop of supply of the processing liquid to the processing unit 2, and processing supplied to the processing unit 2 via the fluid box 5. And a plurality of storage boxes 6 for storing tanks 41 for storing liquid. The processing unit 2 and the fluid box 5 are disposed in the frame 4 of the substrate processing apparatus 1. The chamber 7 and the fluid box 5 of the processing unit 2 are arranged in the horizontal direction. The storage box 6 is disposed outside the frame 4. The storage box 6 may be disposed in the frame 4.

FIG. 3 is a schematic front view showing the inside of the processing unit 2. FIG. 4 is a schematic plan view showing the inside of the processing unit 2.
As shown in FIG. 3, the processing unit 2 rotates the substrate W around a vertical rotation axis A <b> 1 passing through the central portion of the substrate W while holding the substrate W horizontally in the chamber 7 and the chamber 7. A spin chuck 11 and a cylindrical cup 15 that receives the processing liquid discharged from the substrate W are included.

  As shown in FIG. 4, the chamber 7 includes a box-shaped partition wall 8 provided with a loading / unloading port 8a through which the substrate W passes, and a shutter 9 for opening and closing the loading / unloading port 8a. The shutter 9 is movable with respect to the partition wall 8 between an open position where the carry-in / out port 8a is opened and a closed position (a position shown in FIG. 4) where the carry-in / out port 8a is closed. A transfer robot (not shown) loads the substrate W into the chamber 7 through the loading / unloading port 8a and unloads the substrate W from the chamber 7 through the loading / unloading port 8a.

  As shown in FIG. 3, the spin chuck 11 includes a disk-shaped spin base 12 held in a horizontal posture, a plurality of chuck pins 13 that hold the substrate W in a horizontal posture above the spin base 12, and And a spin motor 14 that rotates the substrate W around the rotation axis A1 by rotating the plurality of chuck pins 13. The spin chuck 11 is not limited to a clamping chuck in which a plurality of chuck pins 13 are brought into contact with the peripheral end surface of the substrate W, and the back surface (lower surface) of the substrate W, which is a non-device forming surface, is adsorbed to the upper surface of the spin base 12. Thus, a vacuum chuck that holds the substrate W horizontally may be used.

  As shown in FIG. 3, the cup 15 includes a cylindrical splash guard 17 that surrounds the spin chuck 11 around the rotation axis A <b> 1 and a cylindrical outer wall 16 that surrounds the splash guard 17 around the rotation axis A <b> 1. In the processing unit 2, the upper position of the splash guard 17 is positioned above the position where the spin chuck 11 holds the substrate W (the position shown in FIG. 3), and the upper end of the splash guard 17 is positioned on the substrate W by the spin chuck 11. A guard lifting / lowering unit 18 that vertically moves the splash guard 17 between a lower position and a lower position than the holding position is included.

  As shown in FIG. 3, the processing unit 2 includes a rinsing liquid nozzle 21 that discharges the rinsing liquid downward toward the upper surface of the substrate W held by the spin chuck 11. The rinse liquid nozzle 21 is connected to a rinse liquid pipe 22 in which a rinse liquid valve 23 is interposed. The processing unit 2 may include a nozzle moving unit that moves the rinse liquid nozzle 21 between the processing position and the standby position.

  When the rinse liquid valve 23 is opened, the rinse liquid is supplied from the rinse liquid pipe 22 to the rinse liquid nozzle 21 and discharged from the rinse liquid nozzle 21. The rinse liquid is, for example, pure water (deionized water). The rinse liquid is not limited to pure water, but may be any of carbonated water, electrolytic ion water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 to 100 ppm).

  As shown in FIG. 4, the processing unit 2 includes a plurality of nozzles 26 (first nozzle 26 </ b> A, second nozzle 26 </ b> B, third nozzle 26 </ b> C, and fourth nozzle 26 </ b> D) that discharge a chemical solution downward, and a plurality of nozzles 26. And a plurality of nozzles 26 between a processing position (a position indicated by a two-dot chain line in FIG. 4) and a standby position (a position indicated by a solid line in FIG. 4) by moving the holder 25. And a nozzle moving unit 24 for moving the.

  Typical examples of the chemical solution are an etching solution such as TMAH (tetramethylammonium hydroxide) and a resist stripping solution such as SPM (mixed solution containing sulfuric acid and hydrogen peroxide solution). The chemical solution is not limited to TMAH and SPM, but sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, aqueous ammonia, aqueous hydrogen peroxide, organic acids (such as citric acid and oxalic acid), organic alkalis other than TMAH, surfactants, It may be a liquid containing at least one of the corrosion inhibitors.

As shown in FIG. 3, each nozzle 26 includes a nozzle body 27 that is cantilevered by a holder 25. The nozzle body 27 includes an arm portion 28 extending from the holder 25 in the horizontal longitudinal direction D1 and a tip portion 29 extending downward from the tip 28a of the arm portion 28. The tip 28a of the arm portion 28 means a portion farthest in the longitudinal direction D1 from the holder 25 in plan view.
As shown in FIG. 4, the plurality of arm portions 28 are arranged in a horizontal arrangement direction D2 orthogonal to the longitudinal direction D1 in the order of the first nozzle 26A to the fourth nozzle 26D. The plurality of arm portions 28 are arranged at the same height. The interval between the two arm portions 28 adjacent in the arrangement direction D2 may be the same as any other interval, or may be different from at least one of the other intervals. FIG. 4 shows an example in which a plurality of arm portions 28 are arranged at equal intervals.

The lengths of the plurality of arm portions 28 in the longitudinal direction D1 are shorter in the order of the first nozzle 26A to the fourth nozzle 26D. The tips of the plurality of nozzles 26 (tips 28a of the plurality of arm portions 28) are shifted in the longitudinal direction D1 so as to be arranged in the order of the first nozzle 26A to the fourth nozzle 26D in the longitudinal direction D1. The tips of the plurality of nozzles 26 are arranged linearly in plan view.
The nozzle moving unit 24 moves the plurality of nozzles 26 along an arcuate path passing through the substrate W in plan view by rotating the holder 25 about the nozzle rotation axis A2 extending vertically around the cup 15. Let As a result, the plurality of nozzles 26 move horizontally between the processing position and the standby position. The processing unit 2 includes a bottomed cylindrical standby pot 35 disposed below the standby positions of the plurality of nozzles 26. The standby pot 35 is disposed around the cup 15 in plan view.

  The processing position is a position where the chemical liquid discharged from the plurality of nozzles 26 is deposited on the upper surface of the substrate W. At the processing position, the plurality of nozzles 26 and the substrate W overlap in a plan view, and the tips of the plurality of nozzles 26 have a radial direction Dr in the order of the first nozzle 26A to the fourth nozzle 26D from the rotation axis A1 side in the plan view. Lined up. At this time, the tip of the first nozzle 26A overlaps the central portion of the substrate W in plan view, and the tip of the fourth nozzle 26D overlaps the peripheral portion of the substrate W in plan view.

  The standby position is a position where the plurality of nozzles 26 are retracted so that the plurality of nozzles 26 and the substrate W do not overlap in plan view. At the standby position, the tips of the plurality of nozzles 26 are positioned outside the cup 15 so as to be along the outer peripheral surface of the cup 15 (the outer peripheral surface of the outer wall 16) in plan view, and the order of the first nozzle 26A to the fourth nozzle 26D. Are arranged in the circumferential direction (direction around the rotation axis A1). The plurality of nozzles 26 are arranged in the order of the first nozzle 26A to the fourth nozzle 26D so as to be away from the rotation axis A1.

Next, the plurality of nozzles 26 will be described with reference to FIGS. 5 and 6. Thereafter, the processing liquid supply system will be described.
In the following description, “first” and “A” may be added to the beginning and the end of the configuration corresponding to the first nozzle 26A, respectively. For example, the upstream flow path 48 corresponding to the first nozzle 26A may be referred to as “first upstream flow path 48A”. The same applies to the configuration corresponding to the second nozzle 26B to the fourth nozzle 26D.

As shown in FIG. 5, the nozzle body 27 includes a resin tube 30 that guides the processing liquid, a cross-section cylindrical core metal 31 that surrounds the resin tube 30, and a cross-section cylindrical resin coating 32 that covers the outer surface of the core metal 31. Including. Each nozzle 26 other than the first nozzle 26 </ b> A further includes a nozzle head 33 attached to the tip end portion 29 of the nozzle body 27.
The nozzle body 27 forms one flow path that extends along the nozzle body 27. The nozzle head 33 forms a plurality of flow paths for guiding the processing liquid supplied from the nozzle body 27. The flow path of the nozzle body 27 forms a discharge port 34 that opens on the outer surface of the nozzle body 27. The plurality of flow paths of the nozzle head 33 form a plurality of discharge ports 34 that open at the outer surface of the nozzle head 33. The flow path of the nozzle body 27 corresponds to a part of the upstream flow path 48 described later. Each flow path of the nozzle head 33 corresponds to a downstream flow path 52 described later. The downstream ends of the first upstream channel 48A to the fourth upstream channel 48D are respectively arranged at a plurality of positions having different distances from the rotation axis A1.

  5 and 6 show an example in which the total number of ejection ports 34 provided in the plurality of nozzles 26 is ten. The first nozzle 26 </ b> A includes one discharge port 34 provided in the nozzle body 27. Each nozzle 26 other than the first nozzle 26 </ b> A includes three discharge ports 34 provided in the nozzle head 33. The three discharge ports 34 provided in the same nozzle head 33 are the inner branch discharge port closest to the rotation axis A1 among the three discharge ports 34 and the farthest from the rotation axis A1 among the three discharge ports 34. An outer branch discharge port and an intermediate branch discharge port disposed between the inner branch discharge port and the outer branch discharge port are configured.

  As shown in FIG. 6, the plurality of discharge ports 34 are arranged in a straight line in a plan view. The distance between the two discharge ports 34 at both ends is equal to or less than the radius of the substrate W. The interval between two adjacent discharge ports 34 may be the same as any other interval, or may be different from at least one of the other intervals. Further, the plurality of discharge ports 34 may be arranged at the same height, or may be arranged at two or more different heights.

  When the plurality of nozzles 26 are disposed at the processing position, the plurality of discharge ports 34 are respectively disposed at a plurality of positions having different distances from the rotation axis A1 (shortest distance in plan view). At this time, the innermost discharge port (first discharge port 34 </ b> A) closest to the rotation axis A <b> 1 among the plurality of discharge ports 34 is disposed above the central portion of the substrate W and rotates among the plurality of discharge ports 34. The outermost discharge port (fourth discharge port 34 </ b> D) farthest from the axis A <b> 1 is disposed above the peripheral edge of the substrate W. The plurality of discharge ports 34 are arranged in the radial direction Dr in plan view.

  The first discharge port 34 </ b> A provided in the first nozzle 26 </ b> A is a main discharge port that discharges the processing liquid toward the center of the upper surface of the substrate W. The second discharge port 34B to the fourth discharge port 34D provided in each of the nozzles 26 other than the first nozzle 26A are a plurality of sub-discharge ports that discharge the processing liquid toward a part of the upper surface of the substrate W other than the central portion. It is. The first upstream flow channel 48A connected to the first discharge port 34A is a main upstream flow channel, and the second upstream flow channel 48B to the fourth upstream flow connected to the second discharge port 34B to the fourth discharge port 34D. The channel 48D is a plurality of sub-upstream channels.

  The fourth discharge port 34 </ b> D provided in the fourth nozzle 26 </ b> D is an outer discharge port that discharges the processing liquid toward the periphery of the upper surface of the substrate W. The first discharge port 34A to the third discharge port 34C provided in each nozzle 26 other than the fourth nozzle 26D are a plurality of inner discharge ports that discharge the processing liquid toward a part of the upper surface of the substrate W other than the peripheral portion. It is. The fourth upstream flow channel 48D connected to the fourth nozzle 26D is an outer upstream flow channel, and the first upstream flow channel 48A to the third upstream flow channel connected to the first discharge port 34A to the third discharge port 34C. 48C is a plurality of inner upstream flow paths.

  As shown in FIG. 5, each discharge port 34 discharges a chemical solution in a discharge direction perpendicular to the upper surface of the substrate W. The plurality of discharge ports 34 discharge the chemical liquid toward a plurality of liquid landing positions in the upper surface of the substrate W. The plurality of liquid landing positions are different positions with different distances from the rotation axis A1. The liquid landing position closest to the rotation axis A1 among the plurality of liquid landing positions is referred to as a first liquid landing position, and the liquid landing position second closest to the rotation axis A1 among the plurality of liquid landing positions. In terms of the position, the chemical liquid discharged from the first discharge port 34A reaches the first landing position, and the chemical liquid discharged from the second discharge port 34B reaches the second landing position.

Next, the processing liquid supply system will be described in detail with reference to FIGS. 1 and 2.
The high temperature chemical solution and the low temperature chemical solution described below are the same type of chemical solutions having different temperatures. A specific example of the chemical solution is TMAH. The high temperature chemical solution is a chemical solution having a temperature higher than room temperature, and the low temperature chemical solution is a temperature lower than that of the high temperature chemical solution. As long as the temperature is lower than that of the high-temperature chemical solution, the low-temperature chemical solution may be at room temperature or higher or lower than room temperature.

  The processing liquid supply system includes a first chemical liquid tank 41 that stores a high-temperature chemical liquid that is higher than room temperature. The treatment liquid supply system further converts the first chemical liquid flow path 42 that guides the high temperature chemical liquid sent from the first chemical liquid tank 41 and the high temperature chemical liquid flowing in the first chemical liquid flow path 42 to room temperature (for example, 20 to 30 ° C.). A first upstream heater 43 that adjusts the temperature of the high-temperature chemical liquid in the first chemical liquid tank 41 by heating at a higher upstream temperature, and a first high-temperature chemical liquid in the first chemical liquid tank 41 that is sent to the first chemical liquid flow path 42. 1 pump 44 and the 1st circulation channel 40 which returns the high temperature chemical solution in the 1st chemical solution channel 42 to the 1st chemical solution tank 41.

The treatment liquid supply system includes a first chemical liquid supply valve 45 that opens and closes the first chemical liquid flow path 42, a first circulation valve 46 that opens and closes the first circulation flow path 40, and a supply connected to the first chemical liquid flow path 42. And a flow path 47. The upstream switching unit includes a first chemical liquid supply valve 45.
The processing liquid supply system includes a plurality of upstream flow paths 48 that guide the liquid supplied from the supply flow path 47 toward the plurality of discharge ports 34, and a plurality of flow rates that detect the flow rates of the liquids that flow in the plurality of upstream flow paths 48. The flow meter 49, a plurality of first flow rate adjusting valves 50 for changing the flow rate of the liquid flowing in the plurality of upstream flow paths 48, and a plurality of discharge valves 51 for opening and closing the plurality of upstream flow paths 48, respectively. Although not shown, the first flow rate adjustment valve 50 includes a valve body that opens and closes the flow path and an actuator that changes the opening of the valve body. The actuator may be a pneumatic actuator or an electric actuator, or may be an actuator other than these.

The processing liquid supply system includes a plurality of downstream flow paths 52 that guide the liquid supplied from the upstream flow path 48 toward the plurality of discharge ports 34. The downstream ends of the upstream channels 48 other than the first upstream channel 48 </ b> A are branched into a plurality of downstream channels 52. That is, each upstream flow channel 48 other than the first upstream flow channel 48 </ b> A is a branched upstream flow channel branched into a plurality of downstream flow channels 52.
In FIG. 1 and FIG. 2, an example in which the branch upstream channel branches into two downstream channels 52 is shown. FIG. 5 shows an example in which the branch upstream channel branches into three downstream channels 52. The three downstream flow paths 52 branched from the second upstream flow path 48B are connected to the three discharge ports 34 provided in the same nozzle head 33, respectively. The third upstream channel 48C and the fourth upstream channel 48D are the same as the second upstream channel 48B. The first upstream flow path 48A is connected to a first discharge port 34A provided in the first nozzle 26A.

  The processing liquid supply system includes a second chemical liquid tank 61 that stores a low-temperature chemical liquid having a temperature lower than that of the high-temperature chemical liquid, a second chemical liquid flow path 62 that guides the low-temperature chemical liquid sent from the second chemical liquid tank 61, and a second chemical liquid tank. A second pump 63 that sends the low-temperature chemical liquid in 61 to the second chemical liquid flow path 62 and a second chemical liquid supply valve 64 that opens and closes the second chemical liquid flow path 62 are included. The processing liquid supply system further includes a second circulation channel 75 that returns the low-temperature chemical solution in the second chemical solution channel 62 to the second chemical solution tank 61, and a second circulation valve 76 that opens and closes the second circulation channel 75. Including. The upstream end of the second circulation channel 75 is connected to the second chemical channel 62 at a position upstream of the second chemical solution supply valve 64, and the downstream end of the second circulation channel 75 is the second chemical solution tank. 61 is connected.

1 and 2, the treatment liquid supply system may further include a temperature controller that adjusts the temperature of the low-temperature chemical liquid flowing through the second chemical liquid flow path 62. In this case, the temperature controller may be a heater that heats the low-temperature chemical at a temperature higher than room temperature, or may be a cooler that cools the low-temperature chemical at a temperature lower than room temperature.
The treatment liquid supply system includes a plurality of low temperature liquid channels 71 (first low temperature liquid channel 71A, second low temperature liquid channel 71B, and third low temperature liquid channel 71C branched at the downstream end of the second chemical liquid channel 62. ), A plurality of flow meters 72 for detecting the flow rate of the liquid flowing in the plurality of cryogenic liquid flow paths 71, and a plurality of second flow rate adjusting valves 73 for changing the flow rates of the liquid flowing in the plurality of low temperature liquid flow paths 71 And a plurality of cryogenic liquid valves 74 for opening and closing the plurality of cryogenic fluid channels 71, respectively. The structure of the second flow rate adjustment valve 73 is the same as that of the first flow rate adjustment valve 50.

  The first cryogenic liquid channel 71A to the third cryogenic liquid channel 71C are connected to the first upstream channel 48A to the third upstream channel 48C at positions upstream of the discharge valve 51, respectively. The low-temperature chemical liquid in the low-temperature liquid flow path 71 is supplied to the upstream flow path 48 and mixed with the high-temperature chemical liquid supplied from the first chemical liquid tank 41 in the upstream flow path 48. Since the low temperature chemical is lower than the high temperature chemical, when the high temperature chemical and the low temperature chemical are mixed, the temperature of the chemical supplied to the downstream ends of the first upstream channel 48A to the third upstream channel 48C is lowered.

  The processing liquid supply system includes a plurality of temperature sensors 77 that detect the temperature of the liquid flowing through the first upstream channel 48A to the third upstream channel 48C. The plurality of temperature sensors 77 are connected to the first upstream flow path 48 </ b> A to the third upstream flow path 48 </ b> C at positions upstream of the low temperature liquid flow path 71. The temperature of the mixed liquid (chemical liquid) of the high temperature chemical liquid and the low temperature chemical liquid is detected by the temperature sensor 77. The control device 3 individually changes the opening degrees of the first flow rate adjustment valve 50 and the second flow rate adjustment valve 73 based on the detection values of the plurality of temperature sensors 77.

  The control device 3 controls the mixing ratio changing unit including the plurality of first flow rate adjustment valves 50 and the plurality of second flow rate adjustment valves 73 based on the plurality of temperature sensors 77, so 3. The temperature of the chemical solution supplied to the downstream end of the upstream channel 48C is brought close to the set temperature. Specifically, the control device 3 determines that the temperature of the chemical solution supplied to the downstream ends of the first upstream channel 48A to the third upstream channel 48C is the order of the first upstream channel 48A to the third upstream channel 48C. The mixing ratio of the high-temperature chemical solution and the low-temperature chemical solution is adjusted so as to increase at

Next, a treatment liquid supply system in a discharge state in which a plurality of discharge ports 34 discharge a chemical liquid will be described with reference to FIG. In FIG. 1, the open valve is shown in black and the closed valve is shown in white.
In the discharge state, the high-temperature chemical solution in the first chemical solution tank 41 flows from the first chemical solution channel 42 to the supply channel 47 and from the supply channel 47 to the plurality of upstream channels 48. The high temperature chemical solution supplied to the second upstream channel 48B to the fourth upstream channel 48D flows to the plurality of downstream channels 52.

On the other hand, the low temperature chemical liquid in the second chemical liquid tank 61 flows from the second chemical liquid flow path 62 to the plurality of low temperature liquid flow paths 71, and from the plurality of low temperature liquid flow paths 71 to the first upstream flow path 48A to the third upstream. It flows into the channel 48C. Therefore, the high temperature chemical solution and the low temperature chemical solution are mixed in the first upstream channel 48A to the third upstream channel 48C.
The chemical solution in the first upstream channel 48A is supplied to one first discharge port 34A provided in the first nozzle 26A. The chemical solution in the second upstream channel 48B is supplied to the plurality of second discharge ports 34B (see FIG. 5) provided in the second nozzle 26B via the plurality of downstream channels 52. The third upstream channel 48C and the fourth upstream channel 48D are the same as the second upstream channel 48B. Thereby, the chemical liquid is discharged from all the discharge ports 34.

  The control device 3 is configured so that the temperature of the chemical solution supplied to the downstream ends of the first upstream channel 48A to the third upstream channel 48C increases in the order of the first upstream channel 48A to the third upstream channel 48C. Adjust the mixing ratio of high temperature chemical solution and low temperature chemical solution. On the other hand, the high temperature chemical liquid that is not mixed with the low temperature chemical liquid is supplied to the downstream end of the fourth upstream flow path 48D. Therefore, the temperature of the chemical liquid discharged from the plurality of discharge ports 34 increases stepwise as the distance from the rotation axis A1 increases.

Next, with reference to FIG. 2, the processing liquid supply system in a discharge stopped state in which the discharge of the chemical liquid from the plurality of discharge ports 34 is stopped will be described. In FIG. 2, open valves are shown in black and closed valves are shown in white.
In the discharge stop state, the high-temperature chemical liquid in the first chemical liquid tank 41 is sent to the first chemical liquid flow path 42 by the first pump 44. The high-temperature chemical liquid sent by the first pump 44 is heated by the first upstream heater 43 and then returns to the first chemical liquid tank 41 via the first circulation channel 40. At this time, since the first chemical liquid supply valve 45 is closed, the high-temperature chemical liquid in the first chemical liquid flow path 42 is not supplied to the plurality of upstream flow paths 48.

  On the other hand, the low temperature chemical liquid in the second chemical liquid tank 61 is sent to the second chemical liquid flow path 62 by the second pump 63. The low-temperature chemical solution sent by the second pump 63 returns to the second chemical solution tank 61 via the second circulation channel 75. Similarly to the high-temperature chemical solution, at this time, the second chemical solution supply valve 64 is closed, so that the low-temperature chemical solution in the second chemical solution channel 62 is not supplied to the plurality of low-temperature solution channels 71.

FIG. 7 is a process diagram for explaining an example of the processing of the substrate W performed by the substrate processing apparatus 1. The following operations are executed by the control device 3 controlling the substrate processing apparatus 1. In the following, reference is made to FIG. 3 and FIG. 7 will be referred to as appropriate.
When the substrate W is processed by the processing unit 2, a plurality of nozzles 26 are retracted from above the spin chuck 11 and the splash guard 17 is positioned at the lower position (not shown). ), The substrate W is carried into the chamber 7. As a result, the substrate W is placed on the plurality of chuck pins 13 with the surface facing upward. Thereafter, the hand of the transfer robot is retracted from the inside of the chamber 7, and the loading / unloading port 8 a of the chamber 7 is closed by the shutter 9.

  After the substrate W is placed on the plurality of chuck pins 13, the plurality of chuck pins 13 are pressed against the peripheral edge of the substrate W, and the substrate W is gripped by the plurality of chuck pins 13. Further, the guard lifting / lowering unit 18 moves the splash guard 17 from the lower position to the upper position. Thereby, the upper end of the splash guard 17 is disposed above the substrate W. Thereafter, the spin motor 14 is driven, and the rotation of the substrate W is started. Thereby, the substrate W is rotated at a predetermined liquid processing speed (for example, several hundred rpm).

  Next, the nozzle moving unit 24 moves the plurality of nozzles 26 from the standby position to the processing position. As a result, the plurality of ejection ports 34 overlap the substrate W in plan view. Thereafter, the plurality of discharge valves 51 and the like are controlled, and the chemical liquid is simultaneously discharged from the plurality of nozzles 26 (step S1 in FIG. 7). The plurality of nozzles 26 discharge the chemical liquid in a state where the nozzle moving unit 24 stops the plurality of nozzles 26. When a predetermined time elapses after the plurality of discharge valves 51 are opened, the discharge of the chemical solution from the plurality of nozzles 26 is stopped simultaneously (step S2 in FIG. 7). Thereafter, the nozzle moving unit 24 moves the plurality of nozzles 26 from the processing position to the standby position.

  The chemical liquid discharged from the plurality of nozzles 26 lands on the upper surface of the rotating substrate W, and then flows outward (in the direction away from the rotation axis A1) along the upper surface of the substrate W by centrifugal force. The chemical solution that has reached the peripheral edge of the upper surface of the substrate W scatters around the substrate W and is received by the inner peripheral surface of the splash guard 17. In this way, the chemical liquid is supplied to the entire upper surface of the substrate W, and a liquid film of the chemical liquid covering the entire upper surface of the substrate W is formed on the substrate W. Thereby, the entire upper surface of the substrate W is treated with the chemical solution.

  After the discharge of the chemical liquid from the plurality of nozzles 26 is stopped, the rinse liquid valve 23 is opened, and the discharge of the rinse liquid (pure water) from the rinse liquid nozzle 21 is started (step S3 in FIG. 7). Thereby, the chemical liquid on the substrate W is washed away by the rinse liquid, and a liquid film of the rinse liquid covering the entire upper surface of the substrate W is formed. When a predetermined time elapses after the rinsing liquid valve 23 is opened, the rinsing liquid valve 23 is closed and the discharge of the rinsing liquid from the rinsing liquid nozzle 21 is stopped (step S4 in FIG. 7).

  After the discharge of the rinsing liquid from the rinsing liquid nozzle 21 is stopped, the substrate W is accelerated in the rotation direction by the spin motor 14, and the substrate W rotates at a drying speed (for example, several thousand rpm) higher than the liquid processing speed. (Step S5 in FIG. 7). Thereby, the rinse liquid adhering to the substrate W is shaken off around the substrate W, and the substrate W is dried. When a predetermined time elapses after the high-speed rotation of the substrate W is started, the rotation of the spin motor 14 and the substrate W is stopped.

  After the rotation of the substrate W is stopped, the guard lifting / lowering unit 18 moves the splash guard 17 from the upper position to the lower position. Further, the holding of the substrate W by the plurality of chuck pins 13 is released. The transfer robot causes the hand to enter the chamber 7 with the plurality of nozzles 26 retracted from above the spin chuck 11 and the splash guard 17 is positioned at the lower position. Thereafter, the transfer robot takes the substrate W on the spin chuck 11 with the hand and carries the substrate W out of the chamber 7.

FIG. 8 is a graph showing the distribution of the etching amount of the substrate W.
The processing conditions of the substrate W in the measurement values A to C shown in FIG. 8 are the same except for the nozzle that discharges the chemical solution.
The measured value A indicates the distribution of the etching amount when the chemical solution is discharged to the plurality of discharge ports 34 (ten discharge ports 34) while the plurality of nozzles 26 are stationary, and the substrate W is etched.

  The measured value B is obtained when the substrate W is etched by discharging the chemical liquid to the plurality of discharge ports 34 (four discharge ports 34) while stopping the plurality of nozzles 26 from which all the nozzle heads 33 have been removed. The distribution of the etching amount is shown. That is, the measured value B indicates the distribution of the etching amount when the chemical solution is discharged to the four discharge ports 34 (corresponding to the first discharge ports 34A) provided in the four nozzle bodies 27, respectively. .

The measured value C indicates the distribution of the etching amount when the chemical liquid is discharged only to one discharge port 34 and the liquid solution landing position is fixed at the center of the upper surface of the substrate W.
In the measured value C, the etching amount decreases as the distance from the center of the substrate W increases, and the etching amount distribution shows a mountain-shaped curve. That is, the etching amount is greatest at the position where the chemical solution is deposited, and decreases as the chemical solution is separated from the position. On the other hand, in the measured value A and the measured value B, the etching amount at positions other than the central portion of the substrate W is increased as compared with the measured value C, and the etching uniformity is greatly improved. Yes.

  In the measurement value B, seven peaks are formed. The peak of the middle peak is a position corresponding to the innermost liquid landing position, and the peak of two outer peaks is a position corresponding to the second liquid landing position from the inside. Further, the positions of the two outer crests are positions corresponding to the third liquid landing position from the inner side, and the positions of the two outermost crests are positions corresponding to the fourth liquid landing position from the inner side.

  In the measurement value A, like the measurement value B, a plurality of peaks corresponding to a plurality of liquid landing positions are formed. In the measurement value B, the number of discharge ports 34 is four, whereas in the measurement value A, the number of discharge ports 34 is ten, so the number of peaks increases. Further, compared with the measurement value B, the line indicating the distribution of the etching amount approaches a straight line extending in the left-right direction (a straight line with a constant etching amount), and the etching uniformity is improved.

As described above, in the present embodiment, the supply flow path 47 that guides the processing liquid is branched into a plurality of upstream flow paths 48. Thereby, the number of the discharge ports 34 can be increased. Furthermore, since the branch upstream channels branched into the plurality of downstream channels 52 are included in the plurality of upstream channels 48, the number of discharge ports 34 can be further increased.
The processing liquid flowing through the supply flow path 47 is supplied from the upstream flow path 48 or the downstream flow path 52 to the discharge port 34 and discharged toward the upper surface of the substrate W rotating around the rotation axis A1. The plurality of discharge ports 34 are respectively disposed at a plurality of positions having different distances from the rotation axis A1. Therefore, the uniformity of the temperature of the processing liquid on the substrate W can be improved as compared with the case where the processing liquid is discharged only to one discharge port 34. Thereby, the processing uniformity can be improved while reducing the consumption of the processing liquid.

  When the processing liquid is discharged to the plurality of discharge ports 34 toward a plurality of positions separated in the radial direction, supplying the processing liquid of the same quality to each part of the substrate W is important for improving processing uniformity. is there. When a tank, a filter, or the like is provided for each discharge port 34, a processing liquid having a quality different from that of a processing liquid supplied to a certain discharge port 34 can be supplied to another discharge port 34. On the other hand, in the present embodiment, the high-temperature chemical liquid supplied from the same tank (first chemical liquid tank 41) is discharged to all the discharge ports 34. Thereby, the process liquid of the same quality can be discharged to each discharge port 34. Furthermore, compared to a configuration in which a tank, a filter, and the like are provided for each discharge port 34, the number of parts can be reduced, and maintenance work can be simplified.

  When the processing liquid is hotter than the substrate W, the heat of the processing liquid is taken away by the substrate W. Further, since the processing liquid rotates together with the substrate W, the processing liquid on the substrate W flows outward along the upper surface of the substrate W while being cooled by air. The peripheral speed of each part of the substrate W increases as the distance from the rotation axis A1 increases. The processing liquid on the substrate W is easily cooled as the peripheral speed increases. Further, assuming that the upper surface of the substrate W can be divided into a plurality of annular regions at equal intervals in the radial direction, the area of each region increases as the distance from the rotation axis A1 increases. When the surface area is large, heat easily moves from the treatment liquid to the annular region. For this reason, if the temperatures of the processing liquids discharged from the discharge ports 34 are all the same, sufficient temperature uniformity may not be obtained.

  In the present embodiment, the low-temperature chemical solution as the low-temperature liquid is supplied to the plurality of inner upstream flow paths (the first upstream flow path 48A to the third upstream flow path 48C), and as the high-temperature liquid flowing through these inner upstream flow paths. Mix with hot chemicals. The low temperature chemical is the same kind of liquid as the high temperature chemical and has a temperature lower than that of the high temperature chemical. Therefore, while the high temperature chemical liquid is discharged from the outer discharge port (fourth discharge port 34D), the liquid having a temperature lower than that of the high temperature chemical solution (mixed liquid of the high temperature chemical liquid and the low temperature chemical liquid) It is discharged from the discharge port 34A to the third discharge port 34C). As a result, the temperature of the processing liquid supplied to the upper surface of the substrate W increases stepwise as it moves away from the rotation axis A1. Therefore, compared with the case where the processing liquid of the same temperature is discharged to each discharge port 34, the temperature uniformity of the processing liquid on the substrate W can be improved. Thereby, the processing uniformity can be improved while reducing the consumption of the processing liquid.

  In the present embodiment, the temperature of the liquid flowing through the plurality of inner upstream channels (first upstream channel 48A to third upstream channel 48C) is detected in each inner upstream channel by the plurality of temperature sensors 77. The mixing ratio changing unit including the plurality of first flow rate adjustment valves 50 and the plurality of second flow rate adjustment valves 73 is based on the detection values of the plurality of temperature sensors 77, and the high-temperature chemical solution mixed in the plurality of inner upstream flow paths and The mixing ratio of the low-temperature chemical is changed independently for each inner upstream flow path. Therefore, the temperature of the liquid mixture supplied from the plurality of inner upstream flow paths to the plurality of inner discharge ports can be brought closer to the set temperature more precisely.

  In the present embodiment, the upstream ends of the plurality of downstream flow paths 52 are arranged in the chamber 7. The branch upstream flow path is branched into a plurality of downstream flow paths 52 in the chamber 7. Therefore, the length of each downstream flow path 52 (the length in the direction in which the liquid flows) can be shortened as compared with the case where the branch upstream flow path is branched outside the chamber 7. Thereby, the temperature fall of the process liquid by the heat transfer from the process liquid to the downstream flow path 52 can be suppressed.

  In the present embodiment, the upstream ends of the plurality of upstream flow paths 48 are arranged in the fluid box 5. The supply flow path 47 is branched into a plurality of upstream flow paths 48 in the fluid box 5. Therefore, compared with the case where the supply flow path 47 is branched into a plurality of upstream flow paths 48 at a position upstream of the fluid box 5, the length of each upstream flow path 48 (the length in the direction in which the liquid flows). Can be shortened. Thereby, the temperature fall of the process liquid by the heat transfer from the process liquid to the upstream flow path 48 can be suppressed.

  In the present embodiment, the first discharge port 34A and the second discharge port 34B are arranged in the radial direction Dr in plan view. When the plurality of nozzles 26 having the same length are arranged in the horizontal direction orthogonal to the longitudinal direction D1 so that the plurality of discharge ports 34 are arranged in the radial direction Dr in a plan view, the width of the plurality of nozzles 26 as a whole increases (see FIG. 9). When the plurality of nozzles 26 having different lengths are arranged in the vertical direction so that the plurality of discharge ports 34 are arranged in the radial direction Dr in plan view, the overall height of the plurality of nozzles 26 increases (see FIG. 10).

  In contrast, in the present embodiment, the plurality of arm portions 28 are arranged in a horizontal arrangement direction D2 orthogonal to the longitudinal direction D1. Further, the tips 28a of the plurality of arm portions 28 are shifted in the longitudinal direction D1 so that the tips 28a of the plurality of arm portions 28 are arranged in the order of the first nozzle 26A to the fourth nozzle 26D from the rotation axis A1 side with respect to the longitudinal direction D1. (See FIG. 4). Thereby, the plurality of discharge ports 34 can be arranged in the radial direction Dr in a plan view while suppressing both the width and height of the plurality of nozzles 26 as a whole.

Although the description of the embodiment of the present invention has been described above, the present invention is not limited to the contents of the above-described embodiment, and various modifications can be made within the scope of the present invention.
For example, in the embodiment, the case where the number of the nozzles 26 is four has been described, but the number of the nozzles 26 may be two or three, or may be five or more.
In the above-described embodiment, the case where the nozzle head 33 is not provided in the first nozzle 26A and the nozzle head 33 is attached to all the nozzles 26 other than the first nozzle 26A has been described. The nozzle head 33 may be provided in all the nozzles 26 including. On the contrary, the nozzle heads 33 may not be provided for all the nozzles 26.

In the embodiment, the case where the three downstream flow paths 52 and the three discharge ports 34 are formed in one nozzle head 33 has been described, but the downstream flow path 52 formed in one nozzle head 33. The number of the discharge ports 34 may be two, or four or more.
In the above embodiment, the case where the branch upstream channel (the upstream channel 48 other than the first upstream channel 48A) branches into the plurality of downstream channels 52 in the chamber 7 has been described. May be branched outside the chamber 7.

In the embodiment, the case where the plurality of discharge ports 34 are arranged in the radial direction Dr in a plan view has been described, but the plurality of discharge ports 34 are respectively arranged at a plurality of positions having different distances from the rotation axis A1. If necessary, the plurality of discharge ports 34 may not be arranged in the radial direction Dr in a plan view.
In the above-described embodiment, the case has been described in which the plurality of nozzles 26 are stationary and the plurality of nozzles 26 discharge chemicals. However, the plurality of nozzles 26 is rotated while the plurality of nozzles 26 are rotated around the nozzle rotation axis A2. Alternatively, the chemical solution may be discharged.

In the above embodiment, the case where all the discharge valves 51 are opened at the same time and all the discharge valves 51 are closed at the same time has been described. However, the control device 3 determines that the time during which the outer discharge port 34 is discharging the processing liquid is The plurality of discharge valves 51 may be controlled so that the inner discharge port 34 is longer than the time during which the processing liquid is discharged.
In the above-described embodiment, the case where the first chemical liquid flow path 42 for supplying the chemical liquid to the supply flow path 47 is described. However, a plurality of processing liquid flow paths for supplying the liquid to the supply flow path 47 are provided. May be. Similarly, a plurality of processing liquid channels that supply liquid to the second chemical liquid channel 62 may be provided.

  For example, the first liquid may be supplied from the first liquid channel to the supply channel 47, and the second liquid may be supplied from the second liquid channel to the supply channel 47. In this case, since the first liquid and the second liquid are mixed in the supply flow path 47, the mixed liquid containing the first liquid and the second liquid is supplied from the supply flow path 47 to the plurality of upstream flow paths 48. The first liquid and the second liquid may be the same type of liquid or different types of liquid. Specific examples of the first liquid and the second liquid are a combination of sulfuric acid and hydrogen peroxide water, and a combination of TMAH and pure water.

The control device 3 may equalize the thickness of the thin film after processing by controlling the temperature of the processing liquid supplied to each part of the surface of the substrate W according to the thickness of the thin film before processing.
FIG. 11 is a graph showing an image of the thickness of the thin film and the temperature of the processing liquid supplied to the substrate W before and after the processing. A one-dot chain line in FIG. 11 indicates a film thickness before treatment, and a two-dot chain line in FIG. 11 indicates a film thickness after treatment. The solid line in FIG. 11 indicates the temperature of the processing liquid supplied to the substrate W. The horizontal axis in FIG. 11 indicates the radius of the substrate W. The film thickness before processing may be input to the substrate processing apparatus 1 from an apparatus (for example, a host computer) other than the substrate processing apparatus 1 or may be measured by a measuring machine provided in the substrate processing apparatus 1.

  In the case of the example shown in FIG. 11, the control device 3 may control the substrate processing device 1 so that the temperature of the processing liquid changes in the same manner as the film thickness before processing. Specifically, the control device 3 controls the plurality of first flow rate adjustment valves 50 and the plurality of first flow control valves 50 so that the temperature of the processing liquid in the plurality of upstream flow paths 48 becomes a temperature corresponding to the film thickness before processing. The mixing ratio changing unit including the two flow rate adjusting valve 73 may be controlled.

  In this case, a relatively high temperature processing liquid is supplied to a position where the film thickness before processing is relatively large, and a relatively low temperature processing liquid is supplied to a position where the film thickness before processing is relatively small. The etching amount of the thin film formed on the surface of the substrate W relatively increases at a position where a high temperature processing liquid is supplied, and relatively decreases at a position where a low temperature processing liquid is supplied. Therefore, the thickness of the thin film after processing is made uniform.

  Two or more of all the aforementioned configurations may be combined. Two or more of all the above steps may be combined.

1: substrate processing device 3: control device 5: fluid box 7: chamber 11: spin chuck (substrate holding unit)
24: Nozzle moving unit 25: Holders 26A to 26D: First to fourth nozzles 27: Nozzle body 28: Arm 28a: Tip 29: Tip 33: Nozzle head 34A: First discharge port (inner discharge port)
34B: Second discharge port (inner discharge port)
34C: Third discharge port (inner discharge port)
34D: 4th discharge port (outside discharge port)
41: 1st chemical | medical solution tank 42: 1st chemical | medical solution flow path 43: 1st upstream heater 45: 1st chemical | medical solution supply valve 47: Supply flow path 48A: 1st upstream flow path (inner upstream flow path)
48B: 2nd upstream flow path (inner upstream flow path)
48C: Third upstream flow path (inner upstream flow path)
48D: 4th upstream flow path (outer upstream flow path)
50: First flow rate adjusting valve (mixing ratio changing unit)
51: Discharge valve 52: Downstream flow path 61: Second chemical liquid tank 62: Second chemical liquid flow paths 71A to 71C: First to third low-temperature liquid flow paths 73: Second flow rate adjustment valve (mixing ratio changing unit)
A1: rotation axis D1: longitudinal direction D2: arrangement direction Dr: radial direction W: substrate

Claims (3)

A substrate holding unit that rotates around a vertical rotation axis passing through the center of the substrate while holding the substrate horizontally;
A process that includes an upstream heater, a supply channel, a plurality of upstream channels, a plurality of discharge ports, and a plurality of low-temperature liquid channels, and that supplies a processing liquid to a substrate held by the substrate holding unit A liquid supply system,
The upstream heater heats the high temperature liquid supplied to the supply flow path,
The supply channel guides the high temperature liquid toward the plurality of upstream channels,
Wherein the plurality of upstream channel comprises an outer upstream flow channel and the plurality of inner upstream passage, wherein is branched from the supply passage, the hot liquid supplied from the supply passage to said plurality of outlets Guide you to
The plurality of discharge ports are connected to the outer upstream flow path, connected to the outer discharge ports for discharging the processing liquid toward the upper surface peripheral edge of the substrate, and the plurality of inner upstream flow paths, A plurality of inner discharge ports that discharge the processing liquid toward a plurality of positions in the upper surface of the substrate, which are inside the peripheral edge of the upper surface, respectively, and are arranged at a plurality of positions at different distances from the rotation axis. And discharging the processing liquid supplied through the plurality of upstream channels toward the upper surface of the substrate,
The plurality of low-temperature liquid channels are connected to only the plurality of inner upstream channels at positions upstream from the plurality of inner discharge ports, and are the same type of liquid as the high-temperature liquid flowing through the supply channel. , Guiding a low temperature liquid having a temperature lower than that of the high temperature liquid only toward the plurality of inner upstream flow paths ,
The upper surface of the substrate is treated with the high temperature liquid from the outer discharge port and the mixed liquid of the high temperature liquid and the low temperature liquid mixed in the plurality of inner upstream flow paths from the plurality of inner discharge ports. Substrate processing apparatus that discharges toward the surface. The processing liquid supply system further includes a plurality of temperature sensors and a mixing ratio changing unit,
The plurality of temperature sensors are respectively connected to the plurality of inner upstream flow paths, detect the temperature of the mixed liquid in the plurality of inner upstream flow paths,
The mixing ratio changing unit independently sets a mixing ratio of the high temperature liquid and the low temperature liquid mixed in the plurality of inner upstream flow paths for each of the inner upstream flow paths based on the temperatures detected by the plurality of temperature sensors. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is changed. The mixing ratio changing unit is:
Connected to the plurality of inner upstream flow paths at positions upstream of the plurality of low temperature liquid flow paths, and independently adjusts the flow rate of the high temperature liquid mixed with the low temperature liquid for each of the inner upstream flow paths. A plurality of first flow control valves;
At least one of a plurality of second flow rate adjustment valves that are respectively connected to the plurality of low-temperature liquid flow paths and independently adjust the flow rate of the low-temperature liquid mixed with the high-temperature liquid for each of the low-temperature liquid flow paths. The substrate processing apparatus of Claim 2 containing this.

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