JP6490328B2 - Light emitting device and manufacturing method thereof - Google Patents

Description

The present invention relates to a light emitting device and a method for manufacturing the same .

  Conventionally, when a semiconductor element such as a light emitting element is mounted on a mounting substrate, the semiconductor element is usually bonded by a die bond material. As such a die bond material, for example, conductive paste such as silver, gold, palladium, etc., a resin composition containing a conductive material, solder such as Au—Sn eutectic, Sn—Bi, low melting point metal, etc. A brazing material or the like is used as a conductive die bond material (for example, Patent Documents 1 and 2).

JP 2010-279962 JP 2007-258420 A

  However, when the semiconductor element to be mounted is a light emitting element, it is necessary to minimize light absorption by the die bonding material in order to efficiently extract light emitted from the light emitting element. Therefore, it is not practical to use a die bond material used for die bonding in a semiconductor device as it is as a die bond material for a light emitting element because no consideration is given to light absorption by solder or resin.

  In addition, a light-emitting element having a single-sided electrode structure in which the electrode of the light-emitting element is provided on the same side with respect to the semiconductor layer is mounted by flip chip, and electrical connection between each electrode of the light-emitting element and each wiring on the mounting substrate is performed. In the case of connection, since the emitted light is directly irradiated onto the surface of the mounting substrate exposed from the wiring, there is another problem that deterioration of the substrate itself cannot be avoided.

  The present invention has been made in view of the above problems, and can provide a die-bonding material capable of efficiently extracting light by minimizing light absorption by the die-bonding material and preventing deterioration of the mounting substrate. It is an object of the present invention to provide a light emitting device using this die bond material.

The present invention is as follows.
[1] A die bond material in which solder and a light reflecting material are contained in a thermosetting resin having translucency,
The die-bonding material characterized by containing more translucent thermosetting resin than the said solder.
[2] The above-described die bond material, wherein the light reflecting material is contained in a larger amount than the solder.
[3] Any one of the above-mentioned die bond materials comprising 25 to 85 parts by weight of a thermosetting resin having translucency, 5 to 30 parts by weight of solder, and 10 to 70 parts by weight of a light reflecting material.
[4] Any one of the above-described die bond materials, wherein the light reflecting material is in the form of powder or particles selected from an insulating material.
[5] The solder is any one of the above-described die bond materials in a powder or particle form.
[6] A light-emitting device including a light-emitting element having a pair of electrodes arranged on the same surface side of a semiconductor layer stacked structure and a substrate having the light-emitting element mounted thereon and wirings separated from each other on the surface,
A light-emitting device, wherein the wiring on the surface of the substrate and the pair of electrodes of the light-emitting element are electrically connected to each other by the die-bonding material described in any one of the above.
[7] The light emitting device according to any one of the above, wherein a substrate surface between the wirings is covered with the die bond material.

  ADVANTAGE OF THE INVENTION According to this invention, the die-bonding material which can take out light efficiently by minimizing the light absorption by a die-bonding material, and can prevent the deterioration of the mounting substrate for mounting a light emitting element, and A light emitting device can be provided.

It is a schematic sectional drawing of the light-emitting device of this invention. It is a schematic sectional drawing of another light-emitting device of this invention. It is a schematic sectional drawing of another light-emitting device of this invention. It is a schematic sectional process drawing for demonstrating the manufacturing method of the light-emitting device of this invention.

  The die bond material of the present invention contains a thermosetting resin having translucency, solder, and a light reflecting material.

(Thermosetting resin)
As the thermosetting resin having translucency (hereinafter, simply referred to as “thermosetting resin”), it is possible to transmit about 60% or more of the light emitted from the light emitting element, preferably about 70%. As mentioned above, what can permeate | transmit about 75% or more, about 80% or more, about 85% or more, about 90% or more is preferable.
Some thermosetting resins have a solder flux function, but such resins may be used alone or in combination.

Further, the thermosetting resin is preferably one that cures at a temperature equivalent to the melting point of the solder described later as the temperature required for thermosetting. For example, about 120-300 degreeC is mentioned, About 140-250 degreeC is preferable. Specifically, when Sn—Bi is used as solder, about 140 to 200 ° C. is used, and when Sn—Ag—Cu is used, about 200 to 250 ° C. is mentioned.
Furthermore, some thermosetting resins require various times until they are cured, but those that cure in a short time are preferable in order to perform simple and reliable solder bonding. For example, those that cure within a few minutes are preferred, those that cure within 1 minute are more preferred, those that cure within tens of seconds, and those that cure within 10 seconds are even more preferred.

Specific examples of thermosetting resins include modified epoxy resins such as epoxy resins, silicone resins and silicone modified epoxy resins, modified silicone resins such as epoxy modified silicone resins, polyimide resins, modified polyimide resins, melamine resins and urea resins. , Alkyd resin, silicone and the like. In particular, an epoxy resin, a silicone resin, a silicone-modified epoxy resin, an epoxy-modified silicone resin, and the like are preferable. Thermosetting resins may be used alone or in combination of two or more.
Examples of the epoxy resin used as a component of the epoxy resin composition include conventionally known aliphatic epoxy resins and aromatic epoxy resins.
Among epoxy resins, an epoxy resin having an unsaturated bond may cause yellowing coloring or deterioration due to breakage of a double bond or oxidation due to light and heat having a short wavelength. Epoxy resins that do not contain high unsaturated bonds are preferred, and alicyclic epoxy resins are particularly preferred among aliphatic epoxy resins.

The thermosetting resin or the light reflecting material is preferably contained as a main component in the die bond material of the present invention. Here, the main component means the component having the largest weight ratio. Therefore, it is preferable that the thermosetting resin or the light reflecting material is contained in a larger amount than the later-described solder constituting the die bonding material.
In consideration of the applicability of the die bond material, it is more preferable that the thermosetting resin is contained more than the light reflecting material. Thereby, a die-bonding material can be made into a suitable coating amount and coating thickness. This is because when the content of the thermosetting resin is small and the viscosity as the die bond material is increased, a small amount of coating becomes difficult and the die bond material wraps around to the upper surface of the light emitting element.
In the present specification, the amount of each component is the content or content based on weight unless otherwise specified.

  As for the content rate of a thermoplastic resin, about 25-85% is mentioned with respect to the total weight (100%) of a die-bonding material, About 30-70% is preferable, About 40-70% is more preferable, 50-70 % Is more preferable.

(solder)
Any solder can be used without particular limitation as long as it is commonly used in the field or is commercially available. For example, at least one of Ag, Au, Cu, Pt, Pd, W, Ni, Ta, Ti, Cr, Fe, Co, Ga, In, Li, Se, Sn, Bi, Tl, Zn, Te, and Pb The thing containing a metal or an alloy is mentioned. Among them, those containing at least one metal or alloy selected from Sn, Cu, Ag, Bi, Sb, In, Zn, Au, Ni, Pb and the like are preferable, and Sn, Cu, Ag, Bi, Zn, Those containing at least one metal or alloy selected from Pb and the like are more preferable.

Examples of the alloy include, for example, an Ag-Bi system such as 95.3Ag / 4.7Bi, an Ag-Li system such as 66Ag / 34Li, an Ag-In system such as 3Ag / 97In, and an Ag-Te system such as 67Ag / 33Te, Ag-Tl system such as 97.2Ag / 2.8Tl, Ag-Zn system such as 45.6Ag / 54.4Zn, Au-Sn system such as 80Au / 20Sn, Bi-In of 52.7Bi / 47.3In system In-Sn system such as 35In / 65Sn, 51In / 49Sn, 52In / 48Sn, Bi-Zn system such as 8.1Bi / 91.9Zn, Sn-Bi system such as 43Sn / 57Bi, 42Sn / 58Bi, 98Sn / Sn-Ag systems such as 2Ag, 96.5Sn / 3.5Ag, 96Sn / 4Ag, and 95Sn / 5Ag; Sn-Zn systems such as 91Sn / 9Zn and 30Sn / 70Zn; Sn-Cu system such as Sn / 0.7Cu, Sn-Sb system such as 95Sn / 5Sb, Sn-Ag-In system such as 95.5Sn / 3.5Ag / 1In, 86Sn / 9Zn / 5In, 81Sn / 9Zn / Sn-Zn-In series such as 10In, Sn-Ag-Cu series such as 95.5Sn / 0.5Ag / 4Cu, 96.5Sn / 3.0Ag / 0.5Cu, 90.5Sn / 7.5Bi / 2Ag, Examples include Sn-Bi-Ag systems such as 41.0Sn / 58Bi / 1,0Ag, Sn-Zn-Bi systems such as 89.0Sn / 8.0Zn / 3.0Bi, and Sn / Ag / Cu / Bi.
In particular, a Sn-Bi-based solder having a low melting point is preferable because it can be easily adjusted with the curing temperature of the thermosetting resin.

Since the solder is preferably uniformly dispersed in the die bond material, the solder is preferably in the form of small pieces, powder or particles. Although the size in this case is not particularly limited, for example, the small piece, powder or average particle size is preferably about 50 μm or less, more preferably about 35 μm or less. Here, the average particle diameter can be measured by image observation using a laser diffraction method, an optical microscope, or the like.
The solder content may be an amount that can electrically bond the electrode of the light emitting element and each wiring, and is preferably included to the extent that light absorption is minimized.
As for the content rate of solder, about 5-30% is mentioned with respect to the total weight (100%) of die-bonding material, and about 10-30% is preferable.

(Light reflecting material)
Any light reflecting material that can reflect the light emitted from the light emitting element may be used. Among them, a material having no conductivity, that is, an insulating material is preferable. Specific examples include titanium oxide, silicon oxide, barium sulfate, and boron nitride.
Since the light reflecting material is preferably dispersed uniformly in the die-bonding material, the light reflecting material is preferably in the form of small pieces, powder or particles. The size in this case is not particularly limited, but for example, the average particle size of small pieces, powder or particles is preferably about several μm or less, more preferably about several hundred nm or less.
Here, the average particle diameter can be measured in the same manner as described above.

The light reflecting material is preferably contained to such an extent that light absorption by the solder is minimized. That is, it is preferable to contain the same amount as solder or more than solder.
Further, as described above, the light reflecting material may be contained less than the thermosetting resin, but it is preferable that the light reflecting material is more than the thermosetting resin.
For example, the content of the light reflecting material may be about 10 to 70%, preferably about 10 to 40%, and more preferably about 20 to 30% with respect to the total weight (100%) of the die bonding material.

The die bond material of the present invention may further contain various additives used in the field such as solder flux, filler, activator, thixotropic agent, curing agent, etc., within a range that does not impair the action of the die bond material. Good. That is, it is preferable to stop these additives in a material that does not absorb light or a minimum amount that allows light absorption in order to avoid light absorption. Further, indium, an indium alloy, an antimony alloy, or the like may be added in order to reduce the melting point of the die bond material and lower the processing temperature.
Since the die-bonding material of the present invention is usually in a fluid state at normal temperature, it is suitable that the die-bonding material has a viscosity of, for example, about 10 to 1 million cP. By having such a viscosity, it can be simply used in the form as it is when used as a die bond material.

  As described above, the die-bonding material of the present invention can have anisotropy as a die-bonding material because the solder is dispersed in the translucent thermosetting resin. It is possible to easily and simply die-bond to a mounting substrate having elements, various shapes, or wiring patterns.

  In addition, as described above, the die bond material of the present invention has a light-transmitting thermosetting resin or light reflecting material as a main component, more preferably a thermosetting resin as a main component, The absorption of light by the die bond material can be prevented to the maximum. Moreover, in such a light-transmitting thermosetting resin, since the light reflecting material is more uniformly distributed than the solder, not only the light absorption by the solder is minimized, but also the wiring. In the meantime, light irradiation to the substrate can be minimized, and deterioration of the substrate can be avoided. Further, even when light emitted from the light emitting element is directly incident on the die bond material and reflected, that is, reflected / scattered light from the peripheral member is incident on the die bond material again, the light can be efficiently reflected.

  The die bond material of the present invention preferably contains, for example, 25 to 85 parts by weight of thermosetting resin, 5 to 30 parts by weight of solder, and 10 to 70 parts by weight of light reflecting material. It is more preferable that 35 to 85 parts by weight, 5 to 30 parts by weight of solder, and 10 to 40 parts by weight of light reflecting material are contained.

  By containing each component in such a ratio, anisotropic conductivity as a die-bonding material can be secured, and a balance between light absorption and reflection can be achieved. Furthermore, by ensuring the wettability with solder on the wiring, die bonding by solder can be surely performed on the wiring, and the portion where the wettability of solder is not good (for example, the exposed region of the insulating substrate) ), The bonding property of the solder can be further reinforced by the thermosetting resin while avoiding a short circuit due to the connection by the solder, and a reliable die bond can be realized. As a result, it is possible to prevent the substrate from being directly irradiated with light by the light reflecting material, and thus it is possible to prevent the deterioration of the substrate.

The light-emitting device of the present invention is a device in which a light-emitting element is die-bonded on a substrate using the above-described die-bonding material.
For this purpose, the light-emitting device includes a light-emitting element. In this light emitting device, the types and materials of the first semiconductor layer (for example, n-type semiconductor layer), the active layer, and the second semiconductor layer (for example, p-type semiconductor layer) are not particularly limited. Various semiconductors such as -V group compound semiconductors and II-VI group compound semiconductors can be mentioned. Specific examples include gallium nitride-based semiconductor materials such as In _X Al _Y Ga _1-XY N (0 ≦ X, 0 ≦ Y, X + Y ≦ 1), and include InN, AlN, GaN, InGaN, AlGaN, and InGaAlN. Nitride semiconductors such as are preferred. As the film thickness and layer structure of each layer, those known in the art can be used.
In this light emitting element, a pair of electrodes may be disposed on different surfaces of the semiconductor laminated structure, but a so-called single-sided electrode type in which a pair of electrodes are disposed on the same surface side is preferable. With such a configuration, flip-chip mounting can be performed, and electrical connection to a pair of electrodes can be easily achieved by the above-described die bonding material.

  The substrate to which the light emitting element is die-bonded is usually a plate-like or sheet-like member, and means a so-called mounting substrate, package base material, or the like. The material is not particularly limited. For example, resins such as thermosetting resins and thermoplastic resins (rigid materials such as phenol resin and glass epoxy resin, flexible materials such as BT resin, PPA, polyimide, and PET, etc. ), And those formed of an insulating material such as ceramics or glass.

On the surface of the substrate, there are at least two wiring patterns separated from each other so as to correspond to a pair of electrodes of at least one light emitting element. Further, as long as the wiring exists on the surface of the substrate, the wiring may be embedded inside. The shape of such a wiring pattern is not particularly limited, and can be various forms.
The wiring is not particularly limited as long as it can be soldered and formed of a conductive material, and examples thereof include metals such as gold, silver, copper, nickel, and alloys. Moreover, what was formed by plating with these materials may be used.

Such separated wirings on the surface of the substrate and the pair of electrodes of the light emitting element are electrically connected by the above-described die bond material.
In this case, one of the wirings separated from each other on the surface of the substrate and one of the pair of electrodes of the light emitting element are the other of the wirings separated from each other on the surface of the substrate and the other of the pair of electrodes of the light emitting element. May be separated and bonded to each other by a die bond material. However, as shown in FIG. 1, the wiring 3 and the pair of electrodes 1 a on the substrate 2 are separated from each other by the die bond material 4. Those bonded together are preferable.
In other words, it is preferable that the exposed surface of the substrate 2 between the wirings 3 is disposed so as to be covered with the die bonding material 4 as well as on the wirings 3 separated from each other. Accordingly, die bonding can be performed by arranging the die bonding material once without arranging the die bonding material and die bonding for each positive electrode or for each negative electrode, and it becomes possible to manufacture more simply.

  In order to realize such a die bond, the use of the above-described die bond material of the present invention is advantageous. That is, when the thermosetting resin contains the solder and the light reflecting material uniformly dispersed, the connection between the wiring and the electrode is ensured by the wettability of the solder on the wiring in the thermosetting resin. On the other hand, since the solder is dispersed in the die-bonding material between the wirings and in the portion where the wettability of the solder is not good on the exposed surface of the substrate (for example, the exposed region of the insulating substrate). In addition, it is possible to avoid a short circuit between wires or electrodes due to the connection of solder. In addition, it is possible to realize a very good die bond that can prevent light from the light emitting element from being directly irradiated onto the substrate by the light reflecting material and prevent deterioration of the substrate.

  In general, the wiring material has a relatively good wettability with respect to the solder, whereas the insulating material constituting the substrate has a lower wettability with respect to the solder than the wiring material or repels the solder. It is possible to avoid a short circuit due to solder connection between the wirings. Alternatively, by adjusting the solder content with respect to the thermosetting resin, it is possible to effectively avoid a short circuit due to the connection of the solder between the wirings or between the electrodes as described above.

  In addition, when the substrate exposed surface between the wirings is covered with a die bonding material, the light reflecting material of the die bonding material is disposed on the exposed surface of the substrate directly below the light emitting element (a part other than where the wiring is disposed). Irradiation of light onto the exposed surface of the substrate is avoided, and deterioration of the exposed surface of the substrate due to light irradiation can be effectively prevented.

In order to manufacture the light emitting device of the present invention, first, a substrate on which desired mutually separated wirings are formed and a light emitting element in which a pair of electrodes are arranged on the same side of the semiconductor multilayer structure are prepared. To do.
Next, a die bond material is applied to the surfaces of the wirings separated from each other. In this case, a known method such as coating using a dispenser or printing can be used. At this time, it is preferable to apply the die bond material on the wirings separated from each other and between the wirings.
Subsequently, the light emitting element is mounted in a flip chip at an appropriate position so that the pair of electrodes face each other on the wiring separated from each other and coated with the die bonding material.

Thereafter, by heating the light emitting element and / or the substrate, the light emitting element and the wiring on the substrate are soldered together, and at the same time, the soldering is assisted by curing the thermosetting resin. In this case, the heating may be performed from either the light emitting element side or the substrate side, or from both sides. The heating temperature is preferably about the temperature at which the solder melts and the thermosetting resin cures. Specifically, about 140-250 degreeC is mentioned. The heating time is about several minutes to several seconds. During this heating, the light emitting element may be pressurized and pressed against the substrate. The pressurization is preferably performed simultaneously with the heating. Although the degree of pressurization in the case of pressurizing is not particularly limited, for example, about 0.1 MPa or more can be mentioned.
Next, heating and / or pressurization is terminated. At this time, active cooling from the light emitting element side, the substrate side, or both, or blowing cold air may be performed.

  Through such a series of steps, the die bonding material is disposed between the pair of electrodes of the light emitting element and the wiring of the substrate, and also covers the exposed surface of the substrate between the wirings. It is possible to simultaneously protect the substrate by light irradiation from the element.

Hereinafter, embodiments of the die bonding material and the light emitting device of the present invention will be described in detail with reference to the drawings.
Example 1
An epoxy resin was prepared as a translucent thermosetting resin.
Die bond by uniformly mixing 100 parts by weight of epoxy resin with 15 parts by weight of solder (Sn—Bi solder, particle size of about 10 μm) and 20 parts by weight of TiO ₂ (particle size of 0.5 μm) as a light reflecting material. The material was obtained.

Embodiment 1
A light-emitting device of the present invention is shown in FIG. 1A.
This light-emitting device includes a light-emitting element 1 in which a pair of electrodes are arranged on one surface side of a laminated structure of semiconductor layers, and a substrate on which a pair of wirings 3 separated from each other is formed as a mounting substrate 2. . The substrate is made of glass epoxy resin, and the pair of wirings 3 is made of Cu having a film thickness of about 35 μm.

The light emitting element is flip-chip mounted on the pair of wirings 3 on the mounting substrate so that the pair of electrodes of the light emitting element 1 face each other. This mounting is bonded by the above-described die bonding material 4 disposed between the wiring 3 and the pair of electrodes of the light emitting element 1.
The solder 5 dispersed in the die bond material 4 is appropriately coupled on the wiring 3 to electrically connect the wiring 3 and the electrode, and the solder 5 is disposed on the exposed surface of the substrate between the wiring 3. Even if the particles of the solder 5 (particle size: about 10 μm) are in contact with both the wiring 3 and the electrode, they are arranged in a non-connected state.
Further, the light reflecting material 6 is arranged in the form of particles (particle size: about 0.5 μm) on the exposed surface of the substrate between the wires 3 and between the wires 3 and the electrodes.
Further, the thermosetting resin in which the solder and the light reflecting material are dispersed is cured on the wiring 3 and between the electrodes, between the wirings 3, and around the light emitting element 1, thereby bonding the wiring and the electrode. Arranged in a state.

The light-emitting device described above can be manufactured, for example, as shown in FIGS. 2A to 2D.
First, a mounting board 2 having wirings 3 separated from each other on its surface is prepared. As shown in FIG. 2A, a die bonding material 4 is applied by a dispenser, for example, on the wiring 3 and between the wirings 3 in the mounting portion of the light emitting element 1 of the mounting substrate 2. In this case, the coating thickness of the die bond material 4 is about 0.1 mm.
Next, as shown in FIG. 2B, in order to flip-chip mount the light emitting element 1 in which the pair of electrodes are arranged on the same surface side of the semiconductor multilayer structure on the wiring 3 of the mounting substrate 2, It is placed so as to face the wiring 3.
Subsequently, as shown in FIG. 2C, the light emitting element and / or the substrate are heated to solder the light emitting element and the wiring on the substrate. At the same time, solder bonding is assisted by curing the thermosetting resin. In this case, the heating is performed at 190 ° C. for 10 minutes, for example. In this heating, for example, a load of about 0.1 MPa is applied to the light emitting element.
Then, as shown to FIG. 2D, a heating and / or pressurization is complete | finished and it is left to stand at normal temperature.

  Through such a series of steps, the die bonding material is disposed between the pair of electrodes of the light emitting element and the wiring of the substrate, and also covers the exposed surface of the substrate between the wirings. It is possible to simultaneously protect the substrate by light irradiation from the element.

Embodiment 2
The light emitting device of the present invention is shown in FIG. 1B.
This light-emitting device has a configuration in which the solder 5 disposed between the electrode 1a on one side of the laminated structure of the semiconductor layer and the wiring 3 on the mounting substrate is disposed so as to cover almost the entire surface of the electrode 1a. The configuration is substantially the same as that of the light emitting device of the first embodiment.

Embodiment 3
The light emitting device of the present invention is shown in FIG. 1C.
This light-emitting device uses a substrate 12 that includes wiring 13 inside and an opening that exposes the wiring 13 on the bottom surface in the center portion instead of the mounting substrate 2 of FIG. 1A, and further has a lens function. The molding material 8 has substantially the same configuration as that of the light emitting device of Embodiment 1 except that the molding material 8 is formed on the entire surface in the opening so as to cover the light emitting element 1, the die bonding material 4, and the like.

  As described above, since the die bond material of the present invention can have anisotropy as a die bond material because the solder is dispersed in the translucent thermosetting resin, light emitting elements having various shapes, Die bonding can be easily and simply performed on a mounting substrate having various shapes or wiring patterns.

  The die-bonding material of the present invention uses a light-transmitting thermosetting resin to minimize light absorption by the resin, and mixes and diffuses the light-reflecting material in the thermosetting resin. The light absorption by can also be minimized. Further, as indicated by M in FIG. 1A, the light reflecting material 6 can reflect light. Therefore, when such a die bond material is used as a die bond material for a light emitting element, the light extraction efficiency can be maximized. Furthermore, it is possible to reinforce the mounting of the light emitting element on the mounting substrate by curing with the thermosetting resin at the same time as the bonding of the light emitting element to the mounting substrate with the solder contained in the die bond material. Thereby, reliable bonding of the light emitting element to the wiring formed on the mounting substrate can be easily and reliably performed.

  In addition, when such a die-bonding material is used for mounting a light-emitting element on a mounting substrate, the mounting substrate itself is effectively deteriorated by light irradiation by being disposed on the surface exposed between the wirings on the mounting substrate. Can be prevented. As a result, stable mounting over a long period can be maintained without deteriorating the mounting substrate, and a long lifetime can be realized while maintaining the quality of the light emitting device.

  The die-bonding material of the present invention can be widely used not only as a light-emitting device but also as a die-bonding material for a semiconductor device, and is particularly advantageous in the die-bonding of a light-emitting device.

DESCRIPTION OF SYMBOLS 1 Light emitting element 1a Electrode 2 Mounting substrate 3, 13 Wiring 4 Die bond material 5 Solder 6 Light reflecting material 7 Translucent thermosetting resin 8 Mold material 12 Board | substrate

Claims (10)

A light emitting element having a pair of electrodes arranged on the same surface side of the semiconductor layer stacked structure and an opening, the light emitting element being mounted in the opening, and a part of a wiring formed of a conductive material on a bottom surface of the opening there was exposed, with the wiring which are separated from each other, a light-emitting device having a substrate formed of an insulating material,
The wiring on the surface of the substrate and the pair of electrodes of the light emitting element are electrically connected to each other by a die bond material containing a solder and a light reflecting material in a thermosetting resin having translucency, and the light emitting element The solder is not disposed on the exposed surface of the substrate between the wirings immediately below,
The die bond material is disposed on the entire bottom surface of the opening,
The thermosetting resin having translucency has a temperature required for thermosetting of 140 to 250 ° C., and is contained in a larger weight than the solder.
The light reflecting material is contained in a greater weight than the solder,
The light emitting device, wherein the solder has a melting point of 140 to 200 ° C. and is 5 to 30% with respect to the total weight of the die bond material, except for 30%. A light emitting element having a pair of electrodes arranged on the same surface side of the semiconductor layer stacked structure and an opening, the light emitting element being mounted in the opening, and a part of a wiring formed of a conductive material on a bottom surface of the opening there is exposed to a light emitting device having a substrate formed of an insulating material having the wiring which are separated from each other,
The wiring on the surface of the substrate and the pair of electrodes of the light emitting element are electrically connected to each other by a die bond material containing a solder and a light reflecting material in a thermosetting resin having translucency, and the light emitting element The solder is not disposed on the exposed surface of the substrate between the wirings immediately below,
The die bond material is disposed on the entire bottom surface of the opening,
The light-transmitting thermosetting resin is contained in a weight greater than that of the solder, and is a resin that is cured at a temperature equivalent to the melting point of the solder.
The light reflecting material is contained in a greater weight than the solder,
The light emitting device according to claim 1, wherein the solder accounts for 5 to 30% of the total weight of the die bond material, except for 30%.   The light emitting device according to claim 1, wherein the solder is Sn—Bi-based.   The light-emitting device according to claim 1, wherein the light reflecting material is contained in a weight greater than that of the solder.   The light emitting device according to any one of claims 1 to 4, wherein the thermosetting resin has a temperature required for thermosetting of 140 to 200 ° C.   6. The light emitting device according to claim 1, wherein the die bond material includes a portion where the solder and the light reflecting material are dispersed, and a portion where a part of the solder is connected on the wiring. apparatus. A light-emitting element having a pair of electrodes arranged on the same surface side of the semiconductor layer stacked structure and an opening, the light-emitting element mounted in the opening, and a wiring formed of a conductive material on the bottom surface of the opening parts are exposed, the method for manufacturing a light emitting device having a substrate formed of an insulating material having the wiring which are separated from each other,
The entire surface of the bottom surface of the opening of the substrate has a temperature required for thermosetting of 140 to 250 ° C., and contains a solder and a light reflecting material in a thermosetting resin having translucency, and the thermosetting A step of supplying a die bond material in which a resin is contained in a weight greater than that of the solder and the light reflecting material is contained in a weight greater than that of the solder;
Arranging a light emitting element on the die bond material;
A heating step of curing the thermosetting resin and simultaneously melting the solder,
The solder has a melting point of 140 to 200 ° C. and 5 to 30% based on the total weight of the die bond material, except for 30%.
The melted solder electrically connects the wiring on the substrate surface and the pair of electrodes of the light emitting element, and the solder is disposed on the exposed surface of the substrate between the wirings immediately below the light emitting element. A method for manufacturing a light emitting device in which no is disposed. A light-emitting element having a pair of electrodes arranged on the same surface side of the semiconductor layer stacked structure and an opening, the light-emitting element mounted in the opening, and a wiring formed of a conductive material on the bottom surface of the opening parts are exposed, the method for manufacturing a light emitting device having a substrate formed of an insulating material having the wiring which are separated from each other,
The entire bottom surface of the opening of the substrate contains solder and a light reflecting material in a light-transmitting thermosetting resin, and the thermosetting resin is cured at a temperature equivalent to the melting point of the solder. Supplying a die bond material that is a resin and is contained in a weight greater than that of the solder, and wherein the light reflecting material is contained in a weight greater than that of the solder;
Arranging a light emitting element on the die bond material;
A heating step of curing the thermosetting resin and simultaneously melting the solder,
The solder has a melting point of 140 to 200 ° C. and 5 to 30% based on the total weight of the die bond material, except for 30%.
The molten solder electrically connects the wiring on the substrate surface and the pair of electrodes of the light emitting element, and the solder is exposed on the exposed surface of the substrate between the wirings immediately below the light emitting element. A method for manufacturing a light emitting device that is not arranged.   The method for manufacturing a light emitting device according to claim 7, wherein the solder is Sn—Bi-based.   The method for manufacturing a light emitting device according to any one of claims 7 to 9, wherein the heating step is performed at 140 to 250 ° C.

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