JP6496100B2 - Manufacturing method of semiconductor device - Google Patents

Description

The present invention relates to a method of manufacturing a semi-conductor device.

  2. Description of the Related Art Conventionally, there is known an aluminum member joining method in which a first aluminum member made of aluminum and a second aluminum member made of aluminum are press-contacted to join the first aluminum member and the second aluminum member.

  FIG. 8 is a view for explaining a conventional method of joining aluminum members. In FIG. 8, reference numeral 200 denotes a wedge tool.

  As shown in FIG. 8, the conventional aluminum member joining method is a method in which a first aluminum member 910 and a second aluminum member 920 are pressure-welded while applying ultrasonic waves with the surfaces to be joined facing each other. A step of joining the aluminum member 910 and the second aluminum member 920 is included.

  According to the conventional aluminum member joining method, the first aluminum member 910 and the second aluminum member 920 are pressed against each other while applying an ultrasonic wave, so that the oxide films formed on the surfaces of the aluminum members 910 and 920 are formed. Since it can be destroyed, it is pressed with the non-oxidized aluminum surfaces facing each other. As a result, it becomes possible to join the aluminum members.

JP 2012-74463 A

  However, in the conventional method for joining aluminum members, when the area of the surface to be joined is large, there may be a region where the ultrasonic wave does not reach even if the ultrasonic wave is applied and pressed. For this reason, an oxide film may remain on the surfaces of the surfaces to be joined, and there is a problem that the aluminum members may not be joined uniformly and stably.

  Then, even if it is a case where the area of a to-be-joined surface is large, this invention aims at providing the joining method of the aluminum member which can join aluminum members uniformly and stably.

[1] In the method for joining aluminum members of the present invention, a first aluminum member made of aluminum or an aluminum alloy and a second aluminum member made of aluminum or an aluminum alloy are press-contacted, and the first aluminum member and the second aluminum are joined. A method of joining aluminum members for joining members, wherein the first aluminum member and the second aluminum member are pressed onto the respective surfaces to be joined before the first aluminum member and the second aluminum member are pressure-welded. A concavo-convex structure forming step for forming a concavo-convex structure, and a pressure contact step for pressing the first aluminum member and the second aluminum member in a state where the surfaces to be bonded are opposed to each other are included in this order. .

[2] In the joining method of the aluminum member of the present invention, in the uneven structure forming step, it is preferable to form an uneven structure on each surface to be bonded in the first aluminum member and the second aluminum member by etching. .

[3] In the joining method of the aluminum member of this invention, in the said uneven | corrugated structure formation process, the said 1st aluminum member is pressed by pressing the metal mold | die which has an uneven | corrugated structure against the said 1st aluminum member and the said 2nd aluminum member. And it is preferable to form an uneven | corrugated structure in each to-be-joined surface in the said 2nd aluminum member.

[4] In the joining method of the aluminum member of this invention, it is preferable to press-contact the said 1st aluminum member and the said 2nd aluminum member, without heating in the said press-contact process.

[5] In the joining method of the aluminum member of this invention, it is preferable in the said uneven | corrugated structure formation process to form the uneven structure in which the convex part was regularly arranged.

[6] In the joining method of the aluminum member of this invention, it is preferable that the shape of the said uneven structure is a saw blade shape.

[7] In the joining method of the aluminum member of this invention, it is preferable that the said uneven structure has a convex part of the same size.

[8] In the joining method of the aluminum member of this invention, it is preferable that the said uneven structure has a convex part of a different size.

[9] In the method for joining aluminum members of the present invention, the arrangement pitch of the concavo-convex structure formed on the surface to be joined of the first aluminum member is equal to that of the concavo-convex structure formed on the surface to be joined of the second aluminum member. The arrangement pitch is preferably the same as the arrangement pitch.

[10] In the method for joining aluminum members of the present invention, the arrangement pitch of the concavo-convex structure formed on the surface to be joined of the first aluminum member is equal to that of the concavo-convex structure formed on the surface to be joined of the second aluminum member. It is preferable that the arrangement pitch is different from the arrangement pitch.

[11] In the semiconductor device bonding method according to the present invention (hereinafter referred to as a first semiconductor device manufacturing method according to the present invention), the first metal plate and the first metal plate are arranged apart from each other. An IC chip having a second metal plate, a first electrode formed on one surface and a second electrode formed on the other surface, wherein the first electrode is connected to the first metal plate; Semiconductor device manufacturing method for manufacturing a semiconductor device including a second electrode of a chip and a second electrode connected to the second metal plate and electrically connecting the second electrode of the IC chip and the second metal plate A second metal plate made of aluminum or an aluminum alloy is used as the second metal plate, a connector made of aluminum or an aluminum alloy is used as the connector, and the second metal plate and the connector are used. [1] to [10] The second metal plate and the connector are connected by bonding using the aluminum member bonding method according to any one of the above.

[12] In the semiconductor device bonding method according to the present invention (hereinafter referred to as the second semiconductor device manufacturing method according to the present invention), the first metal plate and the first metal plate are arranged apart from each other. A second metal plate; a first electrode formed on one surface and having an outermost surface made of aluminum or an aluminum alloy; and a second electrode formed on the other surface and made of an outermost surface made of aluminum or an aluminum alloy, wherein the first electrode is An IC chip connected to the first metal plate, a second electrode of the IC chip, and a second metal plate connected to the second electrode of the IC chip and the second metal plate. A semiconductor device manufacturing method for manufacturing a semiconductor device including a connector that uses a first metal plate made of aluminum or an aluminum alloy as the first metal plate, and aluminum as the second metal plate. A second metal plate made of aluminum or an aluminum alloy, a connector made of aluminum or an aluminum alloy as the connector, and an outermost surface of the first electrode and the second electrode made of aluminum or an aluminum alloy as the IC chip. And the connector is mounted on the first metal plate and directly on the second metal plate via the IC chip, and the first metal plate and the Bonding of the aluminum member according to any one of [1] to [10], wherein the first electrode of the IC chip, the second electrode of the IC chip and the connector, and the second metal plate and the connector are respectively connected. By joining using a method, the first metal plate and the first electrode of the IC chip, the second electrode of the IC chip and the connector, and the second metal plate and the connection Characterized by connecting each.

  According to the joining method of the aluminum member of the present invention, in the concavo-convex structure forming step, the concavo-convex structure is formed on each surface to be joined in the first aluminum member and the second aluminum member. At least one of the concavo-convex structures of the surfaces to be bonded is greatly deformed when the two are pressed, and in this process, the oxide film existing on the surface of each surface to be bonded is destroyed. For this reason, it becomes possible to press-contact in the state which the surface of the aluminum which is not oxidized was made to oppose. As a result, even when the area of the surface to be joined is large, compared to the conventional joining method of an aluminum member, it becomes difficult for an oxide film to remain on the surface of the joining surface without being destroyed, and the aluminum member It becomes possible to join them uniformly and stably.

  Moreover, according to the joining method of the aluminum member of this invention, an uneven structure is formed in each to-be-joined surface in a 1st aluminum member and a 2nd aluminum member in an uneven | corrugated structure formation process, and a 1st aluminum member is formed in a press-contacting process. The first aluminum member and the second aluminum member can be easily joined to each other by simply applying pressure without applying heat or applying ultrasonic waves. Become.

  According to the first method for manufacturing a semiconductor device of the present invention, the second metal plate and the connector are bonded using the aluminum member bonding method of the present invention. However, it becomes difficult to have a region where the oxide film formed on each surface to be bonded remains without being broken, and the second metal plate and the connector can be bonded uniformly and stably.

  Further, according to the first method for manufacturing a semiconductor device of the present invention, the second metal plate and the connector are bonded using the aluminum member bonding method of the present invention, so that heat is applied or ultrasonic waves are applied. It is possible to join the second metal plate and the connector by simply applying pressure.

  According to the second method for manufacturing a semiconductor device of the present invention, the first metal plate and the first electrode of the IC chip, the second electrode and the connector of the IC chip, and the second metal plate and the connector are respectively formed. Since the bonding is performed using the aluminum member bonding method of the invention, the oxide film formed on the surface of each bonded surface remains without being destroyed even when the surface of each bonded surface is large It is possible to bond the first metal plate and the first electrode of the IC chip, the second electrode and the connector of the IC chip, and the second metal plate and the connector uniformly and stably. Become.

  Further, according to the second method of manufacturing a semiconductor device of the present invention, the first metal plate and the first electrode of the IC chip, the second electrode and the connector of the IC chip, and the second metal plate and the connector, Since each of the aluminum members is bonded using the bonding method of the present invention, the first metal plate, the first electrode of the IC chip, and the IC chip can be simply applied without applying heat or applying ultrasonic waves. The second electrode and the connector, and the second metal plate and the connector can be joined.

  Further, according to the second method of manufacturing a semiconductor device of the present invention, the first metal plate and the first electrode of the IC chip, the second electrode and the connector of the IC chip, and the second metal plate and the connector, Since bonding is performed using the aluminum member bonding method of the present invention, it is not necessary to press-contact each surface to be bonded, and pressure is applied once with the IC chip sandwiched between the connector and the first metal plate. It is possible to join all of the first metal plate and the first electrode of the IC chip, the second electrode and the connector of the IC chip, and the second metal plate and the connector. It can be manufactured.

3 is a flowchart shown for explaining a method for joining aluminum members according to the first embodiment. It is a figure shown in order to demonstrate the joining method of the aluminum member which concerns on Embodiment 1. FIG. It is a figure shown in order to demonstrate the press-contact process in Embodiment 1. FIG. 5 is a flowchart for explaining a method for manufacturing a semiconductor device according to a second embodiment. FIG. 10 is a view for explaining the method for manufacturing the semiconductor device in the second embodiment. FIG. 6 is a view for explaining a method for manufacturing a semiconductor device in a third embodiment. It is a figure shown in order to demonstrate the joining method of the aluminum member which concerns on a modification. It is a figure shown in order to demonstrate the joining method of the conventional aluminum member.

  Hereinafter, the aluminum member bonding method and the semiconductor device manufacturing method of the present invention will be described based on the embodiments shown in the drawings.

[Embodiment 1]
1. Method of joining aluminum members according to the first embodiment will first be described with reference to the steps shown a method of joining aluminum members according to the first embodiment below.

FIG. 1 is a flowchart for explaining a method for joining aluminum members according to the first embodiment.
FIG. 2 is a view for explaining the aluminum member joining method according to the first embodiment. FIG. 2A shows a process diagram of the concavo-convex structure forming process, and FIGS. 2B and 2C show process diagrams of the pressure contact process.
FIG. 3 is a view for explaining the pressing process in the first embodiment. 3A shows an enlarged view of the surface to be joined before performing the pressure welding process, FIG. 3B shows an enlarged view of the surface to be joined during the pressure welding process, and FIG. 3C shows the pressure welding. The enlarged view of the to-be-joined surface after process implementation is shown. In FIG. 3, reference numeral 12 indicates a convex portion in the concave-convex structure of the first aluminum member 10, and reference numeral 22 indicates a convex portion in the concave-convex structure of the second aluminum member 20.

  The aluminum member joining method according to the first embodiment is an aluminum member joining method in which the first aluminum member 10 and the second aluminum member 20 are joined by press-contacting the first aluminum member 10 and the second aluminum member 20. . As shown in FIG. 1, the joining method of the aluminum member which concerns on Embodiment 1 includes uneven | corrugated structure formation process S1 and press-contact process S2 in this order.

(1) Uneven structure forming step S1
First, the first aluminum member 10 and the second aluminum member 20 are prepared. As the first aluminum member 10, an aluminum metal plate or an aluminum alloy metal plate is used. Further, as the second aluminum member 20, an aluminum metal plate or an aluminum alloy metal plate is used.

  Next, as shown in FIG. 2A, before the first aluminum member 10 and the second aluminum member 20 are pressure-contacted, the surface to be joined in the first aluminum member 10 and the second aluminum member 20 is uneven. Form a structure.

  Specifically, the surface of each bonded surface in the first aluminum member 10 and the second aluminum member 20 is dissolved (etched) with an acid such as hydrochloric acid or sulfuric acid, thereby forming a concavo-convex structure on each bonded surface. To do. Examples of the method for attaching the acid to the surface of the bonded surface include a method of spraying with a spray, a method of dropping the acid by attaching it to a spinner, a method of immersing the surface of the bonded surface in an acid filled in a container, and the like. In the concavo-convex structure forming step, the concavo-convex structure in which the convex portions are regularly arranged is formed by adjusting the time and position of attaching the acid to the surface of the bonded surface.

  The shape of the concavo-convex structure is a saw blade shape, and the concavo-convex structure has convex portions of the same size. The height from the bottom of the concave portion to the top of the convex portion in the concavo-convex structure is, for example, 0.1 μm to 10 μm. The arrangement pitch of the concavo-convex structure formed on the surface to be joined of the first aluminum member is the same as the arrangement pitch of the concavo-convex structure formed on the surface to be joined of the second aluminum member.

  Since aluminum is easily oxidized in the atmosphere, oxide films 14 and 24 are formed on the surface of the concavo-convex structure in a short time after the concavo-convex structure is formed (see FIG. 3).

(2) Pressure welding process S2
Next, the 1st aluminum member 10 and the 2nd aluminum member 20 are made into the state where the joined surface was made to oppose (refer to Drawing 2 (b) and Drawing 3 (a)), and with respect to each joined surface. Pressure is applied by applying pressure from a substantially vertical direction (see FIGS. 2 (c), 3 (b) and 3 (c)). The pressure which press-contacts the 1st aluminum member 10 and the 2nd aluminum member 20 is 1 Mpa-30 Mpa, for example.

  At this time, as shown in FIG. 3B, the concavo-convex structure of each bonded surface is greatly deformed by crushing the tip of the convex portion or deforming the convex portion. In this process, the projections are rubbed and the oxide films 14 and 24 on the surface are scraped, or the projections are deformed to cause cracks in the oxide film. 14 and 24 are destroyed. As a result, a non-oxidized aluminum surface appears on each surface to be bonded, and press-contact is performed with the aluminum surfaces facing each other.

  At this time, the surfaces to be joined are heated by the pressure applied to the first aluminum member 10 and the second aluminum member 20, and the atomic motion is activated. For this reason, the aluminum atoms can move between the aluminum members through the non-oxidized aluminum surface by diffusion. Thereafter, the aluminum atoms are ordered by the attractive force between the aluminum atoms, and as a result, the first aluminum member 10 and the second aluminum member 20 can be bonded (solid phase bonding).

  Note that the surfaces to be joined are also heated by frictional heat generated when the projections rub against each other in the process of press-contacting the first aluminum member 10 and the second aluminum member 20, and atomic motion is active. Will be.

2. Effect of Joining Method of Aluminum Member According to Embodiment 1 According to the joining method of the aluminum member according to Embodiment 1, the surfaces to be joined in the first aluminum member 10 and the second aluminum member 20 in the concavo-convex structure forming step S1. In order to form a concavo-convex structure, at least one of the concavo-convex structures of the surfaces to be joined is greatly deformed when the first aluminum member 10 and the second aluminum member 20 are pressed together, The oxide films 14 and 24 existing on the surface of the bonded surface are destroyed. For this reason, it becomes possible to press-contact in the state which the surface of the aluminum which is not oxidized was made to oppose. As a result, even when the area of the surface to be joined is large, compared to the conventional joining method of aluminum members, it is difficult to have a region where the oxide films 14 and 24 remain without being destroyed on the surface of the joint surface. The aluminum members can be joined uniformly and stably.

  Moreover, according to the joining method of the aluminum member which concerns on Embodiment 1, in a concavo-convex structure formation process S1, a concavo-convex structure is formed in each joined surface in the 1st aluminum member 10 and the 2nd aluminum member 20, and pressure welding process S2 The first aluminum member 10 and the second aluminum member 20 are pressed against each other, so that the first aluminum member 10 and the second aluminum member 20 can be simply applied without applying heat or applying ultrasonic waves. Can be joined.

  Moreover, according to the joining method of the aluminum member which concerns on Embodiment 1, in a concavo-convex structure formation process, a concavo-convex structure is formed in each joined surface in the 1st aluminum member 10 and the 2nd aluminum member 20 by etching. It is possible to form a concavo-convex structure having a desired shape.

  Moreover, according to the joining method of the aluminum member which concerns on Embodiment 1, in the press-contacting process, in order to press-contact the 1st aluminum member 10 and the 2nd aluminum member 20 without heating, each aluminum member 10 and 20 is heated. No heating device is required.

  Moreover, according to the joining method of the aluminum member which concerns on Embodiment 1, in the uneven structure formation process S1, in order to form the uneven structure in which the convex parts 12 and 22 are regularly arranged, the first aluminum member 10 and the first 2 When the aluminum member 20 is pressure-contacted, the uneven structure can be uniformly deformed over the entire surface to be bonded, and it can be prevented that the oxide film remains in the entire surface to be bonded without being destroyed. It becomes possible. As a result, the aluminum members can be joined uniformly and stably.

  Moreover, according to the joining method of the aluminum member which concerns on Embodiment 1, since the shape of a concavo-convex structure is a saw blade shape, when press-contacting the 1st aluminum member 10 and the 2nd aluminum member 20, convex parts are formed. Is easily deformed, and the oxide films 14 and 24 on the surface are easily broken. As a result, it becomes possible to join aluminum members stably.

  Moreover, according to the joining method of the aluminum member which concerns on Embodiment 1, since the uneven structure has the convex parts 12 and 22 of the same size, when press-contacting the 1st aluminum member 10 and the 2nd aluminum member 20, it is. The uneven structure can be uniformly deformed, and the oxide film existing on the surface to be joined can be uniformly broken. As a result, it becomes possible to join aluminum members uniformly.

  Moreover, according to the joining method of the aluminum member which concerns on Embodiment 1, the arrangement pitch of the uneven structure formed in the to-be-joined surface of the 1st aluminum member is the uneven pitch structure formed in the to-be-joined surface of the 2nd aluminum member. Since the arrangement pitch is the same as the arrangement pitch, when the first aluminum member 10 and the second aluminum member 20 are pressed together, it is possible to uniformly deform the concavo-convex structure over the entire surface to be bonded, and the entire surface to be bonded. In this case, it is possible to prevent the oxide film from remaining. As a result, the aluminum members can be joined uniformly and stably.

[Embodiment 2]
FIG. 4 is a flowchart for explaining the method for manufacturing the semiconductor device according to the second embodiment.
FIG. 5 is a view for explaining the method for manufacturing the semiconductor device according to the second embodiment. FIG. 5A shows a state at the end of the connector placement step S30, FIG. 5B shows a state at the press contact step S40, and FIG. 5C shows a state at the end of the press contact step S40.

First, the semiconductor device 100 according to the second embodiment will be described.
The semiconductor device 100 according to the second embodiment is connected to the first metal plate 110, the second metal plate 120, the IC chip 130, the second electrode 134 of the IC chip 130, and the second metal plate 120. The connector 140 which electrically connects the 2nd electrode 134 and the 2nd metal plate 120 is provided (refer FIG.5 (c)).

  In the second embodiment, a first metal plate 110 made of aluminum is used as the first metal plate 110. Further, a second metal plate made of aluminum is used as the second metal plate 120. Furthermore, a connector made of aluminum or an aluminum alloy is used as the connector 140.

  In the present specification, the metal plate includes not only a metal plate but also a metal film (metal film) and a metal layer (metal layer).

  The first metal plate 110 is connected to a first electrode 132 formed on one surface of the IC chip 130 at a bonded surface 112 (hereinafter referred to as a die pad 112).

  The second metal plate 120 is disposed away from the first metal plate 110 and is connected to the connector 140 at the bonded surface 122.

  The IC chip 130 has a first electrode 132 formed on one surface and a second electrode 134 formed on the other surface, and the first electrode 132 is connected to the first metal plate 110. The outermost surfaces of the first electrode 132 and the second electrode 134 are made of aluminum or an aluminum alloy. Specifically, the outermost surfaces of the first electrode 132 and the second electrode 134 are each covered with aluminum. As a method of covering the outermost surfaces of the first electrode 132 and the second electrode 134 with aluminum, an appropriate method can be used. For example, an evaporation method can be used.

  The connector 140 is placed on the first metal plate 110 via the IC chip 130 and is directly placed on the second metal plate 120. The connector 140 is connected to the second electrode 134 and the second metal plate 120 of the IC chip 130 and electrically connects the second electrode 134 of the IC chip 130 and the second metal plate 120.

  The connector 140 has a shape obtained by bending a long metal plate, and has a larger contact area with the IC chip 130 and the second metal plate 120 than a bonding wire. For this reason, it is necessary to arrange a plurality of connectors 140 as in the case of using bonding wires even when the area of the surface to be joined is large as in the case of joining the second electrode 134 and the second metal plate 120. It is possible to join the second electrode 134 and the second metal plate 120 with one connector.

  Next, a method for manufacturing the semiconductor device according to the second embodiment will be described.

  As shown in FIG. 4, the method for manufacturing a semiconductor device according to the second embodiment includes an uneven structure forming step S10, an IC chip disposing step S20, a connector placing step S30, and a pressure contacting step S40.

(1) Uneven structure forming step S10
First, the first metal plate 110, the second metal plate 120, the IC chip 130, and the connector 140 are prepared.
Next, prior to joining the second metal plate 120 and the connector 140, the joining surface 122 of the second metal plate 120 with the connector 140 and the surface to be joined 142 of the connector 140 with the second metal plate 120. An uneven structure is formed. In the concavo-convex structure forming step S10, the concavo-convex structure is formed only on the bonded surfaces 122 and 142 of the second metal plate and the connector. The specific method for forming the concavo-convex structure on each of the surfaces 122 and 142 to be joined is the same method as the concavo-convex structure forming step in the method for bonding aluminum members according to the first embodiment.

(2) IC chip placement step S20
Next, the first metal plate 110 and the second metal plate 120 are arranged at positions separated from the first metal plate 110, and the first electrode 132 is placed on the die pad 112 of the first metal plate 110. The IC chip 130 is disposed so as to be on the plate 110 side (see FIG. 5A). The die pad 112 and the first electrode 132 are joined via solder.

(3) Connector placement step S30
Next, the connector 140 is placed on the first metal plate 110 and directly on the second metal plate 120 via the IC chip 130 (see FIG. 5A).

(4) Pressure welding process S40
Next, the second metal plate 120 and the connector 140 are pressed by applying pressure from a direction substantially perpendicular to the bonded surfaces 122 and 142 with the bonded surfaces 122 and 142 facing each other. (See FIG. 5 (b)). Moreover, the 2nd electrode 134 and the connector 140 are joined via solder. In this way, by connecting the connector 140 to the second electrode 134 and the second metal plate 120 of the IC chip 130, the second electrode 134 of the IC chip 130 and the second metal plate 120 are electrically connected. It becomes possible.

  The semiconductor device 100 can be manufactured as described above (see FIG. 5C).

  According to the manufacturing method of the semiconductor device according to the second embodiment, the second metal plate 120 and the connector 140 are bonded using the aluminum member bonding method of the present invention. Even when the thickness of the second metal plate 120 and the connector 140 is large, it is difficult for the oxide film formed on each of the bonded surfaces 122 and 142 to remain unbroken and the second metal plate 120 and the connector 140 are made uniform and stable. Can be joined.

  Further, according to the method of manufacturing a semiconductor device according to the second embodiment, the second metal plate 120 and the connector 140 are bonded using the aluminum member bonding method of the present invention, so that heat is applied or ultrasonic waves are applied. The second metal plate 120 and the connector 140 can be joined simply by applying a pressure without doing so.

[Embodiment 3]
FIG. 6 is a view for explaining the method for manufacturing the semiconductor device according to the third embodiment. 6A shows the state of the IC chip placement step S20 and the connector placement step S30, FIG. 6B shows the state of the pressure contact step S40, and FIG. 6C shows the state at the end of the pressure contact step S40. Show the state.

  The manufacturing method of the semiconductor device according to the third embodiment basically includes the same steps as the manufacturing method of the semiconductor device according to the second embodiment, but not only the second metal plate and the connector but also the first metal plate. The first electrode of the IC chip and the second electrode of the IC chip and the connector are also bonded using the aluminum member bonding method of the present invention, which is different from the semiconductor device manufacturing method according to the second embodiment. That is, in the method of manufacturing a semiconductor device according to the third embodiment, as shown in FIG. 6, the first metal plate 110 and the first electrode 132a of the IC chip 130, the second electrode 134a of the IC chip 130 and the connector 140, In addition, the second metal plate 120 and the connector 140 are bonded using the aluminum member bonding method of the present invention, respectively, so that the first metal plate 110 and the first electrode 132a of the IC chip 130 and the first chip of the IC chip 130 are connected. The two electrodes 134a and the connector 140, and the second metal plate 120 and the connector 140 are connected to each other.

  In the uneven structure forming step S10, the first metal plate 110 and the first electrode 132a of the IC chip 130, the second electrode 134a and the connector 140 of the IC chip 130, and the second metal plate 120 and the connector 140 are joined. Prior to this, the die pad 112a of the first metal plate 110, the bonded surface 122a of the second metal plate 120, the first and second electrodes 132a and 134a of the IC chip 130, and the second metal plate 120 in the connector 140 are covered. An uneven structure is formed on each of the bonding surface 142a and the bonded surface 144a with the IC chip. In the concavo-convex structure forming step S10, the concavo-convex structure is formed only on each surface to be joined. A specific method of forming the concavo-convex structure is the same method as the concavo-convex structure forming step in the aluminum member bonding method according to the first embodiment.

  In the press-contact process S40, the first metal plate 110 and the IC chip 130 are placed with the die pad 112a and the first electrode 132a facing each other, the IC chip 130 and the connector 140, the second electrode 134a and the IC chip, Pressure is applied in a state where the surfaces to be joined 144a are opposed to each other. In the pressure contact step S40, pressure contact is performed with the IC chip 130 sandwiched between the connector 140 and the first metal plate 110.

  According to the method of manufacturing a semiconductor device according to the third embodiment, the first metal plate 110 and the first electrode 132a of the IC chip 130, the second electrode 134a and the connector 140 of the IC chip 130, and the second metal plate 120 The connector 140 is bonded using the aluminum member bonding method of the present invention, whereby the first metal plate 110 and the first electrode 132a of the IC chip 130, the second electrode 134a of the IC chip 130 and the connector 140, In addition, since the second metal plate 120 and the connector 140 are connected to each other, even if the area of each bonded surface is large, the oxide film formed on the surface of each bonded surface is not destroyed. The first metal plate 110 and the first electrode 132a of the IC chip 130, the second electrode 134a of the IC chip 130 and the connector 140, and And a second metal plate 120 and the connecting terminal 140 uniformly and it is possible to stably joined.

  Further, according to the method of manufacturing a semiconductor device according to the third embodiment, the first metal plate 110 and the first electrode 132a of the IC chip 130, the second electrode 134a and the connector 140 of the IC chip 130, and the second metal plate. 120 and the connector 140 are joined using the joining method of the aluminum member of the present invention, so that the first metal plate 110 and the IC are simply applied by applying pressure without applying heat or applying ultrasonic waves. The first electrode 132a of the chip 130, the second electrode 134a of the IC chip 130 and the connector 140, and the second metal plate 120 and the connector 140 can be bonded to each other.

  Further, according to the method of manufacturing a semiconductor device according to the third embodiment, the first metal plate 110 and the first electrode 132a of the IC chip 130, the second electrode 134a and the connector 140 of the IC chip 130, and the second metal plate. 120 and connector 140 are bonded using the aluminum member bonding method of the present invention, so that it is not necessary to press-contact each surface to be bonded, and IC chip is formed by connector 140 and first metal plate 110. The first metal plate 110 and the first electrode 132a of the IC chip 130, the second electrode 134a and the connector 140 of the IC chip 130, and the second metal plate 120 can be connected to the first metal plate 110 and the IC chip 130 only by applying pressure once. It becomes possible to join all the elements 140, and it becomes possible to manufacture a semiconductor device with high productivity.

  The semiconductor device manufacturing method according to the third embodiment includes not only the second metal plate and the connector, but also the first metal plate and the first electrode of the IC chip, and the second electrode and the connector of the IC chip. The points other than the point of joining using the joining method of the aluminum member of the invention include the same steps as the manufacturing method of the semiconductor device according to the second embodiment, and thus the effect of the manufacturing method of the semiconductor device according to the second embodiment is obtained. Of which, it has a corresponding effect.

  As mentioned above, although this invention was demonstrated based on said embodiment, this invention is not limited to said embodiment. The present invention can be implemented in various modes without departing from the spirit thereof, and for example, the following modifications are possible.

(1) In the first embodiment, the present invention has been described by taking as an example the case where the concavo-convex structure forming step forms the concavo-convex structure on the bonded surfaces of the first aluminum member and the second aluminum member by etching. However, the present invention is not limited to this. For example, in the concavo-convex structure forming step, a concavo-convex structure is formed on each bonded surface of the first aluminum member and the second aluminum member by pressing a mold having the concavo-convex structure against the first aluminum member and the second aluminum member. Even in this case, the present invention can be applied.

(2) In the first embodiment, the present invention has been described by taking as an example the case where an aluminum metal plate or an aluminum alloy metal plate is used as the first aluminum member 10, but the present invention is limited to this. It is not a thing. The bonded surface of the first aluminum member only needs to be covered with aluminum or an aluminum alloy. For example, as the first aluminum member, a first aluminum member in which a metal plate other than an aluminum plate is coated with an aluminum film, or aluminum The present invention can also be applied to a first aluminum member in which an aluminum layer is formed on a metal plate other than the plate.

(3) In the first embodiment, the present invention has been described by taking as an example the case where a metal plate made of aluminum or an aluminum alloy is used as the second aluminum member 20, but the present invention is not limited to this. The bonded surface of the second aluminum member 20 only needs to be covered with aluminum or an aluminum alloy. For example, as the second aluminum member, a second aluminum member in which a metal plate other than the aluminum plate is coated with an aluminum film, The present invention can also be applied to a second aluminum member in which an aluminum layer is formed on a metal plate other than the aluminum plate.

(4) In the first embodiment, the concavo-convex structure has been described by taking the case where the concavo-convex structure has convex portions of the same size as an example, but the present invention is not limited to this. FIG. 7 is a view for explaining the joining method of the aluminum member according to the modification. For example, the present invention can be applied even when the concavo-convex structure has convex portions of different sizes (see FIG. 7A).

(5) In the first embodiment, the arrangement pitch of the concavo-convex structure formed on the surface to be joined of the first aluminum member is the same as the arrangement pitch of the concavo-convex structure formed on the surface to be joined of the second aluminum member. However, the present invention is not limited to this example. For example, when the arrangement pitch of the concavo-convex structure formed on the surface to be bonded of the first aluminum member is different from the arrangement pitch of the concavo-convex structure formed on the surface to be bonded of the second aluminum member (FIG. 7B). The present invention can also be applied to the above.

(6) In the first embodiment, the present invention has been described taking the case where the shape of the concavo-convex structure is a saw blade shape as an example, but the present invention is not limited to this. For example, when the shape of the concavo-convex structure is the shape of a concavo-convex structure in which the convex portion has a T-shape (see FIG. 7C), or the side that forms the convex portion of the saw blade-shaped convex shape The present invention can be applied even when the portion is formed (see FIG. 7D).

(7) In the first embodiment, the present invention has been described by taking as an example the case where the first aluminum member and the second aluminum member are pressed without heating in the pressing process, but the present invention is limited to this. It is not a thing. For example, the present invention can be applied even when the first aluminum member and the second aluminum member are pressure-welded while being heated in the pressure-welding step.

(8) In the second embodiment, the present invention has been described by taking as an example the case where the second metal plate 120 and the connector 140 are bonded using the aluminum member bonding method of the present invention. It is not limited. For example, when the second electrode 134 and the connector 140 of the IC chip 130 are bonded using the aluminum member bonding method of the present invention, the first metal plate 120 and the first electrode 132 of the IC chip 130 are bonded of the present invention. When joining using the joining method of an aluminum member, the 2nd metal plate 120 and the 1st electrode 132 of IC chip 130, the 2nd electrode 134 of IC chip 130, and connector 140 are joined to the aluminum member of the present invention. The present invention can be applied even when joining using a method.

(9) In the second and third embodiments, the present invention has been described by taking the case where the concavo-convex structure is formed only on each surface to be joined in the concavo-convex structure forming step S10. However, the present invention is not limited to this. It is not something. For example, the present invention is applicable even when a concavo-convex structure is formed on the entire surface of the first metal plate, the second metal plate, the IC chip, and the connector.

  10, 10a, 10b, 10c, 10d ... 1st aluminum member, 12, 22 ... convex part, 14, 24 ... oxide film, 20, 20a, 20b, 20c, 20d ... 2nd aluminum member, 100, 102, ... semiconductor 110, first metal plate, 112, 112a ... die pad, 120 ... second metal plate, 122, 122a ... surface to be joined, 130 ... IC chip, 132, 132a ... first electrode, 134, 134a ... second electrode , 140, connectors, 142, 142a, surfaces to be joined (with the second metal plate), 144, 144a, surfaces to be joined (with the IC chip)

Claims (7)

A first metal plate;
A second metal plate disposed apart from the first metal plate;
An IC chip having a first electrode formed on one side and a second electrode formed on the other side, wherein the first electrode is connected to the first metal plate;
A semiconductor device for manufacturing a semiconductor device comprising a second electrode of the IC chip and a second metal plate connected to the second electrode of the IC chip and electrically connecting the second metal plate to the second metal plate. A manufacturing method comprising:
A second metal plate made of aluminum or an aluminum alloy is used as the second metal plate, a connector made of aluminum or an aluminum alloy is used as the connector, and the second metal plate and the connector are joined. As a way,
A method for joining aluminum members, wherein a first aluminum member made of aluminum or an aluminum alloy and a second aluminum member made of aluminum or an aluminum alloy are press-contacted to join the first aluminum member and the second aluminum member. ,
Prior to press-contacting the first aluminum member and the second aluminum member, a concavo-convex structure forming step of forming a sawtooth-shaped concavo-convex structure on each surface to be joined in the first aluminum member and the second aluminum member; ,
A pressure welding step in which the first aluminum member and the second aluminum member are pressure-welded in a state where the surfaces to be bonded are opposed to each other, in this order,
In the concavo-convex structure forming step, the concavo-convex structure in which convex portions are regularly arranged on the bonded surfaces of the first aluminum member and the second aluminum member by etching is formed,
In the pressure welding step, the pressure for pressure-contacting the first aluminum member and the second aluminum member is 1 MPa to 30 MPa,
In the pressing step, when pressing the first aluminum member and the second aluminum member, at least one of the concavo-convex structures of the surface to be joined is deformed, and the concavo-convex structure is deformed. The second metal plate and the connector are connected by bonding using an aluminum member bonding method in which an oxide film existing on the surface of each bonded surface is destroyed in the process of A method for manufacturing a semiconductor device. A first metal plate;
A second metal plate disposed apart from the first metal plate;
An IC chip having a first electrode formed on one side and a second electrode formed on the other side, wherein the first electrode is connected to the first metal plate;
A semiconductor device for manufacturing a semiconductor device comprising: a second electrode of the IC chip; and a connector connected to the second metal plate and electrically connecting the second electrode of the IC chip and the second metal plate. A manufacturing method of
A first metal plate made of aluminum or an aluminum alloy is used as the first metal plate, a second metal plate made of aluminum or an aluminum alloy is used as the second metal plate, and aluminum or an aluminum alloy is used as the connector. As the IC chip, an IC chip in which the outermost surfaces of the first electrode and the second electrode are made of aluminum or an aluminum alloy is used, and the connector is connected to the first via the IC chip. The first metal plate, the first electrode of the IC chip, the second electrode of the IC chip, and the connector, in a state of being placed on the metal plate and directly placed on the second metal plate, And as a joining method for joining the second metal plate and the connector, respectively,
A method for joining aluminum members, wherein a first aluminum member made of aluminum or an aluminum alloy and a second aluminum member made of aluminum or an aluminum alloy are press-contacted to join the first aluminum member and the second aluminum member. ,
Prior to press-contacting the first aluminum member and the second aluminum member, a concavo-convex structure forming step of forming a sawtooth-shaped concavo-convex structure on each surface to be joined in the first aluminum member and the second aluminum member; ,
A pressure welding step in which the first aluminum member and the second aluminum member are pressure-welded in a state where the surfaces to be bonded are opposed to each other, in this order,
In the concavo-convex structure forming step, the concavo-convex structure in which convex portions are regularly arranged on the bonded surfaces of the first aluminum member and the second aluminum member by etching is formed,
In the pressure welding step, the pressure for pressure-contacting the first aluminum member and the second aluminum member is 1 MPa to 30 MPa,
In the pressing step, when pressing the first aluminum member and the second aluminum member, at least one of the concavo-convex structures of the surface to be joined is deformed, and the concavo-convex structure is deformed. The first metal plate and the first electrode of the IC chip, the IC by bonding using an aluminum member bonding method in which an oxide film existing on the surface of each bonded surface is destroyed in the process of A method of manufacturing a semiconductor device, wherein the second electrode of the chip and the connector, and the second metal plate and the connector are connected to each other.   3. The method of manufacturing a semiconductor device according to claim 1, wherein in the press-contacting step, the first aluminum member and the second aluminum member are press-contacted without being heated by a heating device.   The method for manufacturing a semiconductor device according to claim 1, wherein the concavo-convex structure has convex portions of the same size. The method for manufacturing a semiconductor device according to claim 1, wherein the concavo-convex structure has convex portions having different sizes .   5. The arrangement pitch of the concavo-convex structure formed on the surface to be joined of the first aluminum member is the same as the arrangement pitch of the concavo-convex structure formed on the surface to be joined of the second aluminum member. Or a method of manufacturing a semiconductor device according to 5;   6. The arrangement pitch of the concavo-convex structure formed on the surface to be joined of the first aluminum member is different from the arrangement pitch of the concavo-convex structure formed on the surface to be joined of the second aluminum member. The manufacturing method of the semiconductor device as described in any one of Claims 1-3.

Images