JP6496255B2 - Substrate holding device - Google Patents
Substrate holding deviceInfo
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- JP6496255B2 JP6496255B2 JP2016015996A JP2016015996A JP6496255B2 JP 6496255 B2 JP6496255 B2 JP 6496255B2 JP 2016015996 A JP2016015996 A JP 2016015996A JP 2016015996 A JP2016015996 A JP 2016015996A JP 6496255 B2 JP6496255 B2 JP 6496255B2
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Description
本発明は、半導体ウエハなどの基板を基体に吸着保持する基板保持装置に関する。 The present invention relates to a substrate holding apparatus for holding a substrate such as a semiconductor wafer on a base by suction.
基板と基板保持装置の基体との間にパーティクルが介在すると、基板の平面度が低下し、当該基板の露光により回路パターンが形成される半導体製品の歩留まりが低下する。そこで、基板と基体との接触面積の低減を図るため、基体の上面に、基板の外縁部を支持する環状凸部と、環状凸部により囲まれた領域内に配置されて基板を支持する複数のピンと、が形成されている基板保持装置が提案されている（たとえば、特許文献１参照）。 When particles intervene between the substrate and the base of the substrate holding device, the flatness of the substrate is lowered, and the yield of the semiconductor product on which the circuit pattern is formed by the exposure of the substrate is lowered. Therefore, in order to reduce the contact area between the substrate and the substrate, a plurality of annular protrusions that support the outer edge of the substrate and a plurality of members disposed in the area surrounded by the annular protrusions are provided on the upper surface of the substrate to support the substrate. The board | substrate holding | maintenance apparatus with which the pin of and is formed is proposed (for example, refer patent document 1).
半導体製品の超微細化および超高精度化が進むにつれ、基体と環状凸部との接触によるパーティクルの影響をさらに低減することが要求されている。そこで、環状凸部を複数のピンよりもわずかに低くして基体と環状凸部との接触が回避されるように構成された基体保持装置が提案されている（たとえば、特許文献２参照）。 As the semiconductor products become ultra-fine and ultra-high precision, it is required to further reduce the influence of particles due to the contact between the substrate and the annular convex portion. Therefore, there has been proposed a substrate holding device configured such that the annular convex portion is slightly lower than the plurality of pins so that contact between the substrate and the annular convex portion is avoided (see, for example, Patent Document 2).
基板を吸着保持するために基板と基体との間の空間に負圧が形成される際、基体と環状凸部との間隙を通じた気流が生じ、当該気流に応じたベルヌーイ力が基板の外周縁部に作用するため、基体の平面度の低下を招く。 When a negative pressure is formed in the space between the substrate and the substrate to hold the substrate by suction, an air flow is generated through the gap between the substrate and the annular convex portion, and the Bernoulli force according to the air flow is the outer periphery of the substrate Since it acts on the portion, the flatness of the substrate is reduced.
そこで、本発明は、装置におけるリークを防ぎながら外周側の精度向上を図り得る基板保持装置を提供することを目的とする。 Therefore, an object of the present invention is to provide a substrate holding device capable of improving the accuracy on the outer peripheral side while preventing a leak in the device.
本発明の基板保持装置は、上面に開口している通気路が形成されている平板状の基体と、
前記基体の上面から上方に突出して形成されて基板を支持する複数の突起と、
前記複数の突起の上端よりも０．０１〜０．０３［ｍｍ］だけ低い位置に上端が位置するように前記基体の上面から上方に突出して、前記通気路の開口および前記複数の突起を囲うように形成され、その外径が前記基板の最大径と同じに形成されまたは当該基板の最大径よりも８［ｍｍ］以下の範囲で小さく形成されている第１環状凸部と、周方向について少なくとも一部が前記複数の突起の上端よりも０．００１〜０．００５［ｍｍ］だけ低い位置に上端が位置するように前記基体の上面から上方に突出して、前記第１環状凸部よりも３．０〜１０［ｍｍ］だけ内側に離間した位置で前記通気路および前記複数の突起のうち少なくとも一部を囲うように形成されている第２環状凸部と、を備えていることを特徴とする。
The substrate holding device according to the present invention comprises a flat substrate having an air passage opened at the upper surface thereof;
A plurality of protrusions formed to project upward from the upper surface of the substrate to support the substrate;
It projects upward from the upper surface of the base so that the upper end is positioned at a position lower than the upper ends of the plurality of protrusions by 0.01 to 0.03 mm, and surrounds the opening of the air passage and the plurality of protrusions And the first annular convex portion whose outer diameter is formed to be the same as the maximum diameter of the substrate or smaller than the maximum diameter of the substrate by 8 mm or less, and in the circumferential direction The upper end of the plurality of projections protrudes upward from the upper surface of the base so that the upper end is positioned at a position lower than the upper ends of the plurality of projections by 0.001 to 0.005 mm, and is higher than the first annular convexity The air passage and the second annular convex portion formed to surround at least a part of the plurality of projections at a position separated inward by 3.0 to 10 [mm]. I assume.
本発明の基板保持装置によれば、基板が複数の突起に当接するように基体に載置された状態で、基板と第１環状凸部との間には間隙が存在する。このため、基体に形成された通気路を通じて基体の上面と基板の下面との間に存在する空間が減圧された際、当該間隙を通じた気流が生じる。しかるに、第１環状凸部の内側に配置されている第２環状凸部と基板との間隙が、第１環状凸部と基板との間隙よりも狭いため、当該気流の速度が抑制される。この分だけ基板に作用するベルヌーイ力の低減が図られ、基体に吸着保持された基板の平面性の向上が図られる。また、第１環状凸部および第２環状凸部はともに基板から離間しているので、基板と基体との接触に由来するパーティクルの影響の軽減も図られている。 According to the substrate holding device of the present invention, a gap is present between the substrate and the first annular convex portion in a state where the substrate is placed on the base so as to abut on the plurality of protrusions. Therefore, when the space existing between the upper surface of the substrate and the lower surface of the substrate is decompressed through the air passage formed in the substrate, an air flow is generated through the gap. However, since the gap between the second annular convex portion disposed inside the first annular convex portion and the substrate is narrower than the gap between the first annular convex portion and the substrate, the velocity of the air flow is suppressed. The Bernoulli force acting on the substrate is reduced by this amount, and the planarity of the substrate adsorbed and held on the substrate is improved. Further, since both the first annular convex portion and the second annular convex portion are separated from the substrate, the influence of particles derived from the contact between the substrate and the base is also reduced.
本発明の一態様の基板保持装置において、前記第１環状凸部および前記第２環状凸部の間に、前記複数の突起のうち一部が配置されている。 In the substrate holding device of one aspect of the present invention, a part of the plurality of protrusions is disposed between the first annular convex portion and the second annular convex portion.
当該構成の基板保持装置によれば、基板において第１環状凸部と第２環状凸部との間に存在する環状領域が複数の突起により支持される。このため、上記のように弱められたベルヌーイ力が作用しても当該環状領域の変形がより確実に抑止され、基板の平面性の向上が図られる。 According to the substrate holding apparatus of the configuration, the annular region present between the first annular convex portion and the second annular convex portion in the substrate is supported by the plurality of protrusions. For this reason, even if the weakened Bernoulli force acts as described above, the deformation of the annular region is more reliably suppressed, and the planarity of the substrate can be improved.
（構成）
図１および図２に示されている本発明の一実施形態としての基板保持装置は、ウエハＷＦ（基板）を吸着保持するための略平板状の基体１を備えている。基体１は、セラミックス焼結体により略平板状に形成されている。基体１は略円板状のほか、多角形板状または楕円板状などのさまざまな形状であってもよい。基体１には上面（表面）に開口している通気路１０が形成されている。通気路１０は基体１の内部を通るまたは基体１の下面（裏面）に延在する経路に連通していてもよい。通気路１０は真空吸引装置（図示略）に接続されている。
(Constitution)
A substrate holding apparatus according to an embodiment of the present invention shown in FIGS. 1 and 2 includes a substantially flat base 1 for holding a wafer WF (substrate) by suction. The substrate 1 is formed in a substantially flat plate shape by a ceramic sintered body. The substrate 1 may have various shapes such as a polygonal plate shape or an elliptical plate shape in addition to a substantially disk shape. The base 1 is formed with an air passage 10 opened on the upper surface (surface). The air passage 10 may be in communication with a path extending through the inside of the base 1 or to the lower surface (back side) of the base 1. The air passage 10 is connected to a vacuum suction device (not shown).
基体１には、複数の突起２０と、基体１の外周縁部において通気路１０および複数の突起２０を囲う第１環状凸部２１と、第１環状凸部２１より内側で通気路１０および複数の突起２０を囲う第２環状凸部２２と、が基体１の上面から突出して形成されている。なお、図２では基板支持装置の構成の明確化のため、突起２０、第１環状凸部２１および第２環状凸部２２はデフォルトされており、各構成要素の断面図におけるアスペクト比のほか、幅または高さと相互の間隔との比率などは図２に示されているものとは実際には異なる。 The base 1 includes a plurality of projections 20, a first annular convex portion 21 surrounding the ventilation passage 10 and the plurality of projections 20 at the outer peripheral edge of the base 1, and the ventilation paths 10 and a plurality inside the first annular convex portion 21. The second annular convex portion 22 surrounding the projection 20 is formed to project from the upper surface of the base 1. In FIG. 2, the projections 20, the first annular convex portion 21 and the second annular convex portion 22 are defaulted in order to clarify the configuration of the substrate supporting device, and in addition to the aspect ratio in the cross sectional view of each component The ratio of width or height to mutual spacing etc. is actually different from that shown in FIG.
複数の突起２０は、基体１の中心を中心とする同心円状に周方向および径方向に一定の間隔をおいて配置されている。複数の突起２０は、三角格子状、正方格子状などのそのほかの態様で規則的に配置されるほか、周方向または径方向に局所的に疎密の差が生じるように局所的に不規則的に配置されてもよい。突起２０の基体１の上面からの突出量はたとえば１５０〜２００［μｍ］の範囲に含まれるように設計されている。突起２０は円柱状、角柱状等の柱状のほか、円錐台状、角錐台状等の錘台状、下部よりも上部の断面積が小さくなるような段差付きの柱状または錘台状などの形状に形成される。突起２０の上端部（基板との接触部分）の径は５００［μｍ］以下となるように設計される。突起２０の上端部（基板との接触部分）の表面粗さＲａは０．０５〜０．５０［μｍ］の範囲に含まれるように設計されている。 The plurality of protrusions 20 are arranged concentrically around the center of the base body 1 at regular intervals in the circumferential direction and the radial direction. The plurality of protrusions 20 are regularly arranged in other manners such as triangular lattice shape, square lattice shape or the like, and locally irregularly so as to locally generate a difference in density in the circumferential direction or radial direction. It may be arranged. The amount of protrusion of the protrusions 20 from the upper surface of the base 1 is designed to be, for example, in the range of 150 to 200 [μm]. The projections 20 may have a cylindrical shape, a prismatic shape, a truncated cone shape, a truncated pyramid shape, a stepped columnar shape or a truncated cone shape such that the cross-sectional area of the upper portion is smaller than that of the lower portion. Is formed. The diameter of the upper end portion (portion in contact with the substrate) of the protrusion 20 is designed to be 500 μm or less. The surface roughness Ra of the upper end portion (portion in contact with the substrate) of the protrusion 20 is designed to be included in the range of 0.05 to 0.50 [μm].
複数の突起２０の上端よりもΔＨ１＝０．０１〜０．０３［ｍｍ］だけ低い位置に上端が位置するように第１環状凸部２１の基体１の上面からの突出量が設計されている。第１環状凸部２１の最外径はウエハＷＦの外径と同径に形成されまたはウエハＷＦの外径よりも８［ｍｍ］以下の範囲で小さく形成されている。第１環状凸部２１の最外径Ｒ１+がウエハＷＦの外径より大きい場合、真空吸着時にリークが発生し精度良く吸着することができない。一方、第1環状凸部２１の最外径Ｒ１+がウエハＷＦの外径より８［ｍｍ］（片側４［ｍｍ］）を超えて内側に存在している場合、ウエハＷＦの外周部において保持力を得られない面積が大きいため平坦度が悪化する。 The protrusion amount from the upper surface of the base 1 of the first annular convex portion 21 is designed such that the upper end is positioned at a position lower than the upper ends of the plurality of protrusions 20 by ΔH1 = 0.01 to 0.03 [mm]. . The outermost diameter of the first annular convex portion 21 is formed to have the same diameter as the outer diameter of the wafer WF or to be smaller than the outer diameter of the wafer WF by 8 mm or less. When the outermost diameter R1 + of the first annular convex portion 21 is larger than the outer diameter of the wafer WF, a leak occurs at the time of vacuum suction, and the suction can not be performed with high accuracy. On the other hand, when the outermost diameter R1 + of the first annular convex portion 21 exists inside the outer diameter of the wafer WF by more than 8 mm (4 mm on one side), the outer peripheral portion of the wafer WF is held The flatness is deteriorated because the area where the force can not be obtained is large.
第１環状凸部２１の断面形状は、高さＨ１、幅Ｗ１の矩形状であるが、このほか、三角形状、台形状、半長円形状などさまざまに設計されてもよい。第１環状凸部２１の上端部の表面粗さＲａは０．０５〜０．５０［μｍ］の範囲に含まれるように設計されている。 Although the cross-sectional shape of the first annular convex portion 21 is a rectangular shape having a height H1 and a width W1, it may be designed variously such as a triangular shape, a trapezoidal shape or a semi-elliptical shape. The surface roughness Ra of the upper end portion of the first annular convex portion 21 is designed to be included in the range of 0.05 to 0.50 [μm].
複数の突起２０の上端よりもΔＨ２＝０．００１〜０．００５［ｍｍ］だけ低い位置に上端が位置するように第２環状凸部２２の基体１の上面からの突出量が設計されている。第２環状凸部２２の断面形状は、高さＨ２、幅Ｗ２の矩形状であるが、このほか、三角形状、台形状、半長円形状などさまざまに設計されてもよい。第２環状凸部２２の上端部の表面粗さＲａは０．０５〜０．５［μｍ］の範囲に含まれるように設計されている。第２環状凸部２２は、その上端外周縁が、第１環状凸部２１の上端内周縁からＤ＝３〜１０[ｍｍ]だけ内側になるように配置されている。 The amount of protrusion of the second annular convex portion 22 from the upper surface of the base 1 is designed such that the upper end is positioned at a position lower than the upper ends of the plurality of protrusions 20 by ΔH2 = 0.001 to 0.005 [mm]. . Although the cross-sectional shape of the second annular convex portion 22 is a rectangular shape having a height H2 and a width W2, it may be designed variously such as a triangular shape, a trapezoidal shape, or a semi-elliptical shape. The surface roughness Ra of the upper end portion of the second annular convex portion 22 is designed to be included in the range of 0.05 to 0.5 μm. The second annular convex portion 22 is arranged such that the upper end outer peripheral edge thereof is inward of the upper end inner peripheral edge of the first annular convex portion 21 by D = 3 to 10 [mm].
なお、基体１の上面において第１環状凸部２１と第２環状凸部２２との間に存在する環状領域に複数の突起２０が形成されていてもよい。基体１の上面において第１環状凸部２１外側に存在する環状領域に複数の突起２０が形成されていてもよい。 A plurality of projections 20 may be formed in an annular region existing between the first annular convex portion 21 and the second annular convex portion 22 on the upper surface of the base 1. A plurality of projections 20 may be formed in an annular region present outside the first annular convex portion 21 on the upper surface of the base 1.
（作製方法）
前記構成の基板保持装置は、たとえば次のような手順で作製される。すなわち、原料粉末から略円板状の成形体が作製され、この成形体が焼成されることで略円板状の焼結体が作製される。原料粉末としては、たとえば純度９７％以上の炭化ケイ素、必要に応じてこれに適量の焼結助剤が添加された混合原料粉末が用いられる。そのほか、アルミナ粉末等、他のセラミックス粉末が原料粉末として用いられてもよい。そのうえで、当該焼結体に通気路１０、複数の突起２０、第１環状凸部２１および第２環状凸部２２などがブラスト加工またはミリング加工などの適当な加工法にしたがって形成される。前記工程によって前記構成の基板保持装置の基体１が製造される。
(Production method)
The substrate holding device of the above configuration is manufactured, for example, in the following procedure. That is, a substantially disc-shaped compact is produced from the raw material powder, and the substantially disc-like sintered body is produced by firing the compact. As the raw material powder, for example, silicon carbide having a purity of 97% or more, and a mixed raw material powder to which an appropriate amount of a sintering aid is added as necessary, is used. Besides, other ceramic powder such as alumina powder may be used as a raw material powder. Then, the air passage 10, the plurality of projections 20, the first annular convex portion 21 and the second annular convex portion 22 etc. are formed in the sintered body according to an appropriate processing method such as blast processing or milling processing. The base 1 of the substrate holding device having the above-described structure is manufactured by the above-described steps.
（機能）
前記構成の基板保持装置によれば、ウエハＷＦが複数の突起２０に当接するように基体１に載置された状態で、ウエハＷＦと第１環状凸部２１との間には間隙が存在する。このため、基体１に形成された通気路１０を通じてウエハＷＦの上面と基体１の下面との間に存在する空間が減圧された際、当該間隙を通じた気流が生じる（図２／黒矢印参照）。しかるに、第１環状凸部２１の内側に配置されている第２環状凸部２２とウエハＷＦとの間隙が、第１環状凸部２１とウエハＷＦとの間隙よりも狭いため、当該気流の速度が抑制される。この分だけウエハＷＦの外周縁に下方に作用するベルヌーイ力の低減が図られ、基体１に吸着保持されたウエハＷＦの平面性の向上が図られる。また、第１環状凸部２１および第２環状凸部２２はともにウエハＷＦから離間しているので、ウエハＷＦと基体１との接触に由来するパーティクルの影響の軽減も図られている。
(function)
According to the substrate holding apparatus having the above configuration, a gap is present between the wafer WF and the first annular convex portion 21 in a state where the wafer WF is mounted on the base 1 so as to abut on the plurality of protrusions 20. . For this reason, when the space existing between the upper surface of the wafer WF and the lower surface of the substrate 1 is depressurized through the air passage 10 formed in the substrate 1, an air flow is generated through the gap (see FIG. 2 / black arrow). . However, since the gap between the second annular convex portion 22 disposed inside the first annular convex portion 21 and the wafer WF is narrower than the gap between the first annular convex portion 21 and the wafer WF, the velocity of the air flow Is suppressed. The Bernoulli force acting downward on the outer peripheral edge of the wafer WF is reduced by this amount, and the planarity of the wafer WF held by suction on the substrate 1 is improved. Further, since both the first annular convex portion 21 and the second annular convex portion 22 are separated from the wafer WF, the influence of particles derived from the contact between the wafer WF and the base 1 is also reduced.
（実施例）
（実施例１）
炭化ケイ素の焼結体からなる、径φ３００［ｍｍ］、厚さｔ１．２［ｍｍ］の略円板状の基体１に通気路１０が形成された。基体１の上面に略円柱状の複数の突起２０、複数の突起２０を取り囲む略円環状の第１環状凸部２１および第１環状凸部２１の内側にある略同心円状の第２環状凸部２２が形成された。複数の突起２０は、３．６［ｍｍ］間隔で三角格子状に配置され、複数の突起２０が第１環状凸部２１および第２環状凸部２２により挟まれている略円環状の領域にも配置されている。各突起２０は、高さＨ１５０［μｍ］、径φ３００［μｍ］、上端面の表面粗さＲａ０．１［μｍ］になるように形成された。第１環状凸部２１は、複数の突起２０の上端よりもΔＨ１＝０．０１［ｍｍ］だけ低い位置に上端が位置するように、幅Ｗ１が２００［μｍ］（内径Ｒ１-２９９［ｍｍ］、外径Ｒ１+２９９．４［ｍｍ］）、上端面の表面粗さＲａ０．１［μｍ］になるように形成された。第２環状凸部２２は、複数の突起２０の上端よりもΔＨ２＝０．００１［ｍｍ］だけ低い位置に上端が位置するように、幅Ｗ２は２００［μｍ］（内径Ｒ２-２８９［ｍｍ］、外径Ｒ２+２８９．４［ｍｍ］）、上端面の表面粗さＲａ０．１［μｍ］になるように形成された。すなわち、第１環状凸部２１および第２環状凸部２２の間隔Ｄが４．８［ｍｍ］に調節された。このようにして実施例１の基板保持装置が作製された。
(Example)
Example 1
An air passage 10 was formed in a substantially disc-like substrate 1 having a diameter of 300 mm and a thickness of t 1.2 mm made of a sintered body of silicon carbide. A plurality of substantially cylindrical projections 20 on the upper surface of the base 1, a substantially annular first annular convex portion 21 surrounding the plurality of projections 20, and a substantially concentric second annular convex portion inside the first annular convex portion 21 22 were formed. The plurality of projections 20 are arranged in a triangular lattice at an interval of 3.6 [mm], and in a substantially annular area in which the plurality of projections 20 are sandwiched by the first annular convex portion 21 and the second annular convex portion 22. Are also arranged. Each protrusion 20 is formed to have a height H 150 [μm], a diameter φ 300 [μm], and a surface roughness Ra of 0.1 [μm] on the upper end surface. The first annular projection 21, as the upper end to ΔH1 = 0.01 [mm] position lower than the upper end of the plurality of projections 20 are located, the width W1 is 200 [μm] (inner diameter R1 - 299 [mm] , Outer diameter R1 + 299.4 [mm]), and the surface roughness Ra of the upper end surface was 0.1 [μm]. The second annular projection 22, as the upper end in ΔH2 = 0.001 [mm] position lower than the upper end of the plurality of projections 20 are located, the width W2 200 [μm] (inner diameter R2 - 289 [mm] , Outer diameter R 2 + 289.4 [mm]), and the surface roughness Ra of the upper end surface was 0.1 [μm]. That is, the distance D between the first annular convex portion 21 and the second annular convex portion 22 was adjusted to 4.8 [mm]. Thus, the substrate holding device of Example 1 was produced.
すなわち、（ΔＨ１、Ｒ１-、ΔＨ２、Ｒ２-）が（０．０１［ｍｍ］、２９９［ｍｍ］、０．００１［ｍｍ］、２８９［ｍｍ］）に設計された条件下で実施例１の基板保持装置が作製された。 That is, (ΔH 1, R 1 − , ΔH 2, R 2 − ) was designed to (0.01 [mm], 299 [mm], 0.001 [mm], 289 [mm]) in Example 1 of the present invention. A substrate holder was made.
（実施例２）
ΔＨ１が０．０３［ｍｍ］に変更されたほかは実施例１と同様の条件下で実施例２の基板保持装置が作製された。
(Example 2)
The substrate holding device of Example 2 was manufactured under the same conditions as in Example 1 except that ΔH1 was changed to 0.03 [mm].
（実施例３）
Ｒ１-が２９６［ｍｍ］に変更されたほかは実施例１と同様の条件下で実施例３の基板保持装置が作製された。
(Example 3)
The substrate holding device of Example 3 was manufactured under the same conditions as in Example 1 except that R 1 − was changed to 296 [mm].
（実施例４）
ΔＨ２が０．００５［ｍｍ］に変更されたほかは実施例１と同様の条件下で実施例４の基板保持装置が作製された。
(Example 4)
The substrate holding device of Example 4 was manufactured under the same conditions as in Example 1 except that ΔH 2 was changed to 0.005 [mm].
（実施例５）
Ｒ２-が２８０［ｍｍ］に変更されたほかは実施例１と同様の条件下で実施例５の基板保持装置が作製された。
(Example 5)
The substrate holding device of Example 5 was produced under the same conditions as in Example 1 except that R 2 − was changed to 280 [mm].
（評価方法）
各実施例の基板保持装置により径φ３００［ｍｍ］、厚さｔ０．７［ｍｍ］の略円板状の基板を保持されている状態の基板の平坦度ＬＴＶ（Ｌｏｃａｌ Ｔｈｉｃｋｎｅｓｓ Ｖａｒｉａｔｉｏｎ）がレーザー干渉計により測定された。この評価結果が、各実施例の基板保持装置における突起２０、第１環状凸部２１および第２環状凸部２２のそれぞれのサイズ等とともに表１にまとめて示されている。
(Evaluation method)
Flatness LTV (Local Thickness Variation) of the substrate in a state where a substantially disk-like substrate with a diameter of φ300 [mm] and a thickness t of 0.7 [mm] is held by the substrate holding device of each embodiment is a laser interferometer It was measured by The evaluation results are collectively shown in Table 1 together with the sizes and the like of the protrusions 20, the first annular convex portion 21 and the second annular convex portion 22 in the substrate holding device of each example.
（比較例）
（比較例１）
第２環状凸部２２が省略されたほかは実施例１と同様の条件下で比較例１の基板保持装置が作製された。
(Comparative example)
(Comparative example 1)
The substrate holding device of Comparative Example 1 was manufactured under the same conditions as in Example 1 except that the second annular convex portion 22 was omitted.
（比較例２）
第１環状凸部２１が省略されたほかは実施例１と同様の条件下で比較例２の基板保持装置が作製された。
(Comparative example 2)
The substrate holding device of Comparative Example 2 was manufactured under the same conditions as in Example 1 except that the first annular convex portion 21 was omitted.
（比較例３）
ΔＨ１が０．００４［ｍｍ］に変更されたほかは実施例１と同様の条件下で比較例３の基板保持装置が作製された。
(Comparative example 3)
The substrate holding device of Comparative Example 3 was produced under the same conditions as in Example 1 except that ΔH1 was changed to 0.004 [mm].
（比較例４）
ΔＨ１が０．０４［ｍｍ］に変更されたほかは実施例１と同様の条件下で比較例４の基板保持装置が作製された。
(Comparative example 4)
The substrate holding device of Comparative Example 4 was manufactured under the same conditions as in Example 1 except that ΔH1 was changed to 0.04 [mm].
（比較例５）
Ｒ１-が２９４［ｍｍ］に変更されたほかは実施例１と同様の条件下で比較例５の基板保持装置が作製された。
(Comparative example 5)
A substrate holding device of Comparative Example 5 was produced under the same conditions as in Example 1 except that R 1 − was changed to 294 [mm].
（比較例６）
ΔＨ２が０．０１［ｍｍ］に変更されたほかは実施例１と同様の条件下で比較例６の基板保持装置が作製された。
(Comparative example 6)
The substrate holding device of Comparative Example 6 was manufactured under the same conditions as in Example 1 except that ΔH 2 was changed to 0.01 [mm].
（比較例７）
Ｒ２-が２９４［ｍｍ］に変更されたほかは実施例１と同様の条件下で比較例７の基板保持装置が作製された。
(Comparative example 7)
A substrate holding device of Comparative Example 7 was produced under the same conditions as in Example 1 except that R 2 − was changed to 294 [mm].
（比較例８）
Ｒ２-が２７６［ｍｍ］に変更されたほかは実施例１と同様の条件下で比較例８の基板保持装置が作製された。
(Comparative example 8)
A substrate holding device of Comparative Example 8 was produced under the same conditions as in Example 1 except that R 2 − was changed to 276 [mm].
各比較例の基板保持装置の評価結果が、突起２０、第１環状凸部２１および第２環状凸部２２のそれぞれのサイズ等とともに表２にまとめて示されている。 The evaluation results of the substrate holding device of each comparative example are collectively shown in Table 2 together with the size and the like of each of the protrusions 20, the first annular convex portion 21 and the second annular convex portion 22.
表１および表２を比較すると、各実施例の基板保持装置によれば、各比較例の基板保持装置と比較して、基板の平坦度が高いことがわかる。 When Table 1 and Table 2 are compared, according to the substrate holding device of each example, it can be seen that the flatness of the substrate is high as compared with the substrate holding device of each comparative example.
１‥基体、１０‥通気路、２０‥突起、２１‥第１環状凸部、２２‥第２環状凸部、ＷＦ‥ウエハ（基板）。 1. substrate, 10. air passage, 20. protrusion, 21. first annular convex portion, 22. second annular convex portion, WF wafer (substrate).
Claims (2)
前記基体の上面から上方に突出して形成されて基板を支持する複数の突起と、
前記複数の突起の上端よりも０．０１〜０．０３［ｍｍ］だけ低い位置に上端が位置するように前記基体の上面から上方に突出して、前記通気路の開口および前記複数の突起を囲うように形成され、その外径が前記基板の最大径と同じに形成されまたは当該基板の最大径よりも８［ｍｍ］以下の範囲で小さく形成されている第１環状凸部と、
周方向について少なくとも一部が前記複数の突起の上端よりも０．００１〜０．００５［ｍｍ］だけ低い位置に上端が位置するように前記基体の上面から上方に突出して、前記第１環状凸部よりも３．０〜１０［ｍｍ］だけ内側に離間した位置で前記通気路および前記複数の突起のうち少なくとも一部を囲うように形成されている第２環状凸部と、を備えていることを特徴とする基板保持装置。 A flat substrate having an air passage opened at the top surface;
A plurality of protrusions formed to project upward from the upper surface of the substrate to support the substrate;
It projects upward from the upper surface of the base so that the upper end is positioned at a position lower than the upper ends of the plurality of protrusions by 0.01 to 0.03 mm, and surrounds the opening of the air passage and the plurality of protrusions A first annular convex portion which is formed in the same manner and whose outer diameter is formed to be equal to the maximum diameter of the substrate or smaller than the maximum diameter of the substrate by 8 [mm] or less;
The first annular convex portion protrudes upward from the upper surface of the base so that the upper end is positioned at a position at least a part of which is lower than the upper ends of the plurality of projections by 0.001 to 0.005 mm in the circumferential direction. And a second annular convex portion formed so as to surround at least a part of the air passage and the plurality of projections at a position spaced apart inward by 3.0 to 10 [mm] with respect to the portion. A substrate holding device characterized in that.
前記第１環状凸部および前記第２環状凸部の間に、前記複数の突起のうち一部が配置されていることを特徴とする基板保持装置。
In the substrate holding device according to claim 1,
A substrate holding device, wherein a part of the plurality of protrusions is disposed between the first annular convex portion and the second annular convex portion.
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