JP6500433B2 - Electro-optical device, method of manufacturing the same, electronic apparatus - Google Patents

Description

  The present invention relates to an electro-optical device, a method of manufacturing the same, and an electronic apparatus.

  As an example of an electro-optical device, an organic EL device in which pixels using organic electroluminescence (EL: Electro Luminescence) elements are arranged in a matrix in a display area of an element substrate has been proposed (for example, Patent Documents 1 and 2) See).

  Specifically, in Patent Document 1, an organic EL element in which a first electrode (pixel electrode), a light emitting layer, and a second electrode (counter electrode) are sequentially stacked is electrically connected to the first electrode. Power supply line, and a switching element (transistor) for switching the electrical connection between the first electrode and the power supply line, and the first electrode is superimposed on the light-reflecting power supply line (reflection layer). An organic EL device with a top emission structure arranged is disclosed.

  On the other hand, Patent Document 2 discloses an organic EL element having a resonant structure (cavity structure) in which a reflective layer, an optical path adjustment layer, a first electrode (pixel electrode), a light emitting layer and a second electrode (counter electrode) are sequentially stacked. And the light emitted from the light emitting layer is repeatedly reflected between the reflective layer and the second electrode, and the optical between the reflective layer and the second electrode adjusted by the optical adjustment layer (light path adjusting layer) There is disclosed an organic EL device which emits light by enhancing light of a specific wavelength (resonant wavelength) according to a specific distance.

JP, 2013-238725, A JP, 2013-089444, A

  By the way, when the structure described in Patent Document 1 is applied to the organic EL device described in Patent Document 2 described above, it is disposed between the power supply line (reflection layer) and the first electrode (pixel electrode). By adjusting the thickness of the optical adjustment layer (optical path adjustment layer), the optical path adjustment between the reflective layer and the pixel electrode is performed.

  However, in the organic EL device described in Patent Document 1, the relay electrode (light shielding layer) disposed through the optical adjustment layer is patterned in a predetermined shape on the surface of the optical adjustment layer. For this reason, when patterning a relay electrode in a predetermined shape, there exists a possibility that the optical adjustment layer under a relay electrode may be etched. Therefore, when the optical adjustment layer is etched, the optical adjustment layer can not be controlled to a predetermined thickness.

  One aspect of the present invention has been proposed in view of such conventional circumstances, and an electro-optical device capable of performing a light emitting operation of a light emitting element with good color reproducibility, a method of manufacturing the same, and An object of the present invention is to provide an electronic apparatus provided with such an electro-optical device.

An electro-optical device according to an aspect of the present invention includes an element substrate including a display area in which a plurality of pixels are arranged in a matrix. The element substrate includes, for each pixel, a light emitting element and a transistor for driving the light emitting element. The light emitting element is disposed on the transistor via the insulating layer, and the reflective electrode, the protective layer, the optical path adjustment layer, the first electrode, the light emitting layer, and the second electrode are stacked. It has the following structure. The light emitting element is electrically connected to the transistor through the contact electrode. In the protective layer, a contact hole penetrating the protective layer is formed. The contact electrode includes a first contact portion disposed in a state of being buried in the contact hole, and a second contact portion disposed on the surface of the protective layer. The protective layer is a first insulating film disposed on the reflective electrode, and a second insulating film disposed on the surface of the first insulating film and patterned in the same shape as the second contact portion. And. The reflective electrode is divided and disposed for each pixel. The reflective electrode and the first electrode are electrically connected via the contact electrode. The transistor and the reflective electrode are electrically connected through a contact electrode disposed through the insulating layer. A gap is formed between each of the reflective electrodes which are divided and disposed for each pixel.

  According to this configuration, when the contact electrode is patterned into a predetermined shape, it is possible to cause the first insulating film to function as an etching stopper of the second insulating film. Thus, even when the second insulating film is patterned in the same shape as the second contact portion, the thickness of the first insulating film under the second insulating film can be prevented from becoming uneven. it can. Therefore, in this electro-optical device, by adjusting the thickness of the optical path adjustment layer disposed on the surface of the protective layer, the optical path adjustment between the reflective electrode and the first electrode can be accurately performed, It is possible to perform the light emitting operation of the light emitting element with good color reproducibility by the resonant structure.

In the electro-optical device, the first insulating film may be made of a material having a lower etching rate than the second insulating film.

  According to this configuration, it is possible to increase the etching selectivity between the first insulating film and the second insulating film when patterning the contact electrode into a predetermined shape. Therefore, when the second insulating film is patterned in the same shape as the second contact portion, the first insulating film under the second insulating film can function as an etching stopper.

  In the electro-optical device, the first insulating film may contain silicon nitride, and the second insulating film may contain silicon oxide.

  According to this configuration, it is possible to selectively etch silicon oxide with respect to silicon nitride by dry etching using a fluorine-based gas, for example. Therefore, when patterning the contact electrode into a predetermined shape, it is possible to cause the first insulating film to function as an etching stopper of the second insulating film.

  In the electro-optical device, at least a part of the end of the optical path adjustment layer may be located on the surface of the second contact electrode.

  According to this configuration, when patterning the optical path adjustment layer into a predetermined shape, it is possible to make the second contact electrode function as an etching stopper of the optical path adjustment layer and to increase the aperture ratio of each pixel.

  Further, in the above electro-optical device, the opening is formed in the reflective electrode, and the first insulating film covers the surface of the reflective electrode in which the opening is formed, and has a recess formed inside the aperture; It may be configured to include a buried insulating film embedded in the.

  According to this configuration, the surface on the side in contact with the optical path adjustment layer of the protective layer can be planarized, so that the optical path between the reflective electrode and the first electrode can be adjusted by adjusting the thickness of the optical path adjustment layer for each pixel. Adjustments can be made accurately. Thus, it is possible to perform the light emitting operation of the light emitting element with good color reproducibility by the resonant structure.

  Further, in the above-described electro-optical device, the optical path adjustment layer is configured to cover the surface of the buried insulating film and to arrange at least a part of the end portion on the surface of the first insulating film. May be

  According to this configuration, when patterning the optical path adjustment layer into a predetermined shape, it is possible to cause the first insulating film to function as an etching stopper for the optical path adjustment layer while protecting the embedded insulating film.

  In the electro-optical device, the first insulating film may contain silicon nitride, and the optical path adjustment layer may contain silicon oxide.

  According to this configuration, it is possible to selectively etch silicon oxide with respect to silicon nitride by dry etching using a fluorine-based gas, for example. Therefore, when the light path adjustment layer is patterned into a predetermined shape, it is possible to cause the first insulating film to function as an etching stopper of the light path adjustment layer.

  Further, in the above-described electro-optical device, the configuration may be such that the reflection increasing layer is disposed on the surface of the reflection electrode.

  According to this configuration, it is possible to improve the reflection characteristics of the reflection electrode.

  In the above-described electro-optical device, the reflective electrode is divided and disposed for each pixel, and the reflective electrode and the first electrode are electrically connected through the contact electrode and disposed so as to penetrate the insulating layer. The transistor and the reflective electrode may be electrically connected to each other through the contact electrode, and a gap may be formed between each of the reflective electrodes divided and disposed for each pixel.

  According to this configuration, the transistor and the first electrode are electrically connected via the reflective electrode, so that the reflective electrode and the first electrode have the same potential. Thus, the light emitting operation of the highly reliable light emitting element can be performed while controlling the potential applied to the first electrode from the transistor through the reflective electrode. Moreover, according to this configuration, it is possible to further improve the yield.

  In the above-described electro-optical device, the reflective electrode is constituted by a part of the power supply line, a hole is formed in the reflective electrode, a relay electrode is disposed inside the hole, and the contact electrode is relayed The transistor may be electrically connected to the transistor through an electrode.

  According to this configuration, it is possible to improve the display quality by shielding the light incident from the hole with the contact electrode.

  An electronic apparatus according to an aspect of the present invention includes any one of the above-described electro-optical devices.

  According to this configuration, it is possible to provide an electronic apparatus provided with an electro-optical device capable of performing a light emitting operation of a light emitting element with good color reproducibility.

A method of manufacturing an electro-optical device according to one aspect of the present invention includes an element substrate including a display area in which a plurality of pixels are arranged in a matrix, and the element substrate includes a light emitting element and light emission for each pixel. And a transistor for driving the element, the light emitting element being disposed on the transistor through the insulating layer, the reflective electrode, the protective layer, the optical path adjustment layer, the first electrode, the light emitting layer And the second electrode is stacked, the light emitting element is electrically connected to the transistor through the contact electrode, and a contact hole penetrating the protective layer is formed in the protective layer. The contact electrode includes a first contact portion disposed in a state of being buried in the contact hole and a second contact portion disposed on the surface of the protective layer, and the protective layer is disposed on the reflective electrode. First placed An insulating film, and a second insulating film disposed on the surface of the first insulating film and patterned in the same shape as the second contact portion, and the reflective electrode is divided for each pixel The reflective electrode and the first electrode are electrically connected through the contact electrode, and the transistor and the reflective electrode are electrically connected through the contact electrode disposed through the insulating layer. What is claimed is: 1. A method of manufacturing an electro-optical device, comprising: forming a first insulating film on a reflective electrode; Forming a second insulating film on the surface of the film, forming a contact hole penetrating the first insulating film and the second insulating film, and embedding the second insulating film in the contact hole Forming a conductive film covering the surface of the insulating film; Forming a mask layer of a predetermined shape on the surface of the film, etching the conductive film and the first insulation film until the surface of the first insulation film is exposed, and removing the mask layer, And forming a first electrode above the first insulating film.

  According to this method, it is possible to form a contact electrode including the first contact portion disposed in a state of being buried in the contact hole and the second contact portion disposed on the surface of the protective layer. . Further, when the contact electrode is patterned into a predetermined shape, the first insulating film can be made to function as an etching stopper of the second insulating film. Thus, even when the second insulating film is patterned in the same shape as the second contact portion, the thickness of the first insulating film under the second insulating film can be prevented from becoming uneven. it can. Therefore, in the method of manufacturing the electro-optical device, the optical path adjustment between the reflective electrode and the first electrode can be accurately performed by adjusting the thickness of the optical path adjustment layer formed on the surface of the protective layer. Accordingly, it is possible to manufacture an electro-optical device capable of performing the light emitting operation of the light emitting element with good color reproducibility by the resonant structure.

In the method of manufacturing the electro-optical device, the first insulating film may be formed of a material having a lower etching rate than the second insulating film.

  According to this method, it is possible to increase the etching selectivity between the first insulating film and the second insulating film when patterning the contact electrode into a predetermined shape. Therefore, when the second insulating film is patterned in the same shape as the second contact portion, the first insulating film under the second insulating film can function as an etching stopper.

  In the method of manufacturing the electro-optical device, a silicon nitride film may be formed as the first insulating film, and a silicon oxide film may be formed as the second insulating film.

  According to this method, silicon oxide can be selectively etched with respect to silicon nitride by dry etching using, for example, a fluorine-based gas. Therefore, when patterning the contact electrode into a predetermined shape, it is possible to cause the first insulating film to function as an etching stopper of the second insulating film.

FIG. 1 is a plan view showing the configuration of an organic EL device according to a first embodiment of the present invention. It is a circuit diagram which shows the structure of the element substrate with which the organic electroluminescent apparatus shown in FIG. 1 is provided. It is a circuit diagram which shows the structure of the pixel circuit with which the organic electroluminescent apparatus shown in FIG. 1 is provided. It is a top view which shows the structure of the pixel with which the organic electroluminescent apparatus shown in FIG. 1 is provided. (A) Sectional drawing which concerns on 1st Embodiment by line segment A-A 'shown in FIG. 4, (b) It is sectional drawing to which the one part pixel shown in (a) was expanded. (A) A cross-sectional view according to the first embodiment by line segment B-B 'shown in FIG. 4, (b) A cross-sectional view according to the first embodiment by line segment C-C' shown in FIG. (C) It is sectional drawing which concerns on 1st Embodiment by line segment DD 'shown in FIG. It is sectional drawing for demonstrating the manufacturing process of the organic electroluminescent apparatus shown in FIG. (A) Sectional drawing which concerns on 2nd Embodiment by line segment A-A 'shown in FIG. 4, (b) It is sectional drawing to which the one part pixel shown in (a) was expanded. (A) A cross-sectional view according to the second embodiment taken along line BB 'shown in FIG. 4, (b) A cross-sectional view according to the second embodiment taken along line CC' shown in FIG. (C) It is sectional drawing which concerns on 2nd Embodiment by line segment DD 'shown in FIG. It is a top view which shows the structure of the pixel with which the organic electroluminescent apparatus which concerns on the 3rd Embodiment of this invention is provided. 11 is a cross-sectional view taken along line E-E 'shown in FIG. FIG. 11 is a cross-sectional view for illustrating a manufacturing process of the organic EL device shown in FIG. 10. It is the schematic which shows an example of the electronic device provided with the organic electroluminescent apparatus.

First Embodiment
(Organic EL device)
First, an organic EL device 100 shown in FIG. 1 will be described as a first embodiment of the present invention.
The organic EL device 100 is a self-emission display device shown as an example of the “electro-optical device” in the present invention. FIG. 1 is a plan view schematically showing the structure of the organic EL device 100. As shown in FIG.

  As shown in FIG. 1, the organic EL device 100 has an element substrate 10 and a protective substrate 70. The element substrate 10 and the protective substrate 70 are bonded to each other by an adhesive (not shown) while facing each other. In addition, an epoxy resin, an acrylic resin, etc. can be used for an adhesive agent, for example.

  The element substrate 10 includes, as light emitting elements, a pixel 20B in which an organic EL element 30B that emits blue (B) light is disposed, a pixel 20G in which an organic EL element 30G that emits green (G) light is disposed, The pixel 20R in which the organic EL element 30R emitting R light is disposed has a display area E in which the pixels 20R are arranged in a matrix.

  In the organic EL device 100, full color display is provided with the pixel 20B, the pixel 20G, and the pixel 20R as a display unit. In the following description, the pixel 20B, the pixel 20G and the pixel 20R may be collectively treated as the pixel 20, and the organic EL element 30B, the organic EL element 30G and the organic EL element 30R are collectively treated as the organic EL element 30. There is.

  In the display area E, a color filter layer 50 is provided. Of the color filter layer 50, the blue color filter layer 50B is disposed on the organic EL element 30B of the pixel 20B, and the green color filter layer 50G is disposed on the organic EL element 30G of the pixel 20G. A red color filter layer 50R is disposed on the organic EL element 30R of the pixel 20R.

  In the present embodiment, the pixels 20 from which light emission of the same color is obtained are arranged in the Y direction (first direction), and the pixels 20 from which light emission of different colors is obtained cross (orthogonal) the Y direction. It is arranged in the direction 2). Therefore, the arrangement of the pixels 20 is a so-called stripe method. The organic EL elements 30B, the organic EL elements 30G, and the organic EL elements 30R are arranged in stripes according to the arrangement of the pixels, and the blue color filter layer 50B, the green color filter layer 50G, and the red color filter Layers 50R are also arranged in stripes. The arrangement of the pixels 20 is not limited to the stripe method, and may be a mosaic method or a delta method.

  The organic EL device 100 has a top emission structure. Therefore, light emitted from the organic EL element 30 is transmitted through the color filter layer 50 of the element substrate 10 and emitted from the side of the protective substrate 70 as display light.

  Since the organic EL device 100 has a top emission structure, an opaque ceramic substrate or semiconductor substrate can be used as the base of the element substrate 10 in addition to the transparent quartz substrate or glass substrate. In the present embodiment, a silicon substrate (semiconductor substrate) is used as a base of the element substrate 10.

  Outside the display area E, a plurality of external connection terminals 103 are arranged along one side on the long side of the element substrate 10. A data line drive circuit 101 is provided between the plurality of external connection terminals 103 and the display area E. The scanning line driving circuit 102 is provided between the display area E and the two short sides of the element substrate 10. In the following description, the direction along the long side of the element substrate 10 is the X direction, the direction along the short side of the element substrate 10 is the Y direction, and the direction from the protective substrate 70 toward the element substrate 10 is Z ( +) Direction.

  The protective substrate 70 is smaller than the element substrate 10, and is disposed to face the element substrate 10 so that the external connection terminals 103 are exposed. The protective substrate 70 is a translucent substrate, and a quartz substrate, a glass substrate, or the like can be used. The protective substrate 70 has a role of protecting the organic EL element 30 disposed in the display area E so as not to be damaged, and is provided wider than the display area E.

  FIG. 2 is a circuit diagram showing the structure of the element substrate 10. As shown in FIG. 2, on the element substrate 10, m rows of scanning lines 12 extend in the X direction, and n columns of data lines 14 extend in the Y direction. Further, power supply lines 19 are provided extending in the Y direction on the element substrate 10 along the data lines 14 for each column.

  In the element substrate 10, pixel circuits 110 are provided corresponding to intersections between the m rows of scanning lines 12 and the n columns of data lines 14. The pixel circuit 110 forms a part of the pixel 20. In the display area E, m rows × n columns of pixel circuits 110 are arranged in a matrix.

  A reset potential Vorst for initialization is supplied (supplied) to the power supply line 19. Furthermore, although not shown, three control lines for supplying control signals Gcmp, Gel, and Gorst are provided in parallel to the scanning line 12.

  The scan line 12 is electrically connected to the scan line drive circuit 102. The data line 14 is electrically connected to the data line drive circuit 101. A control signal Ctr1 for controlling the scan line drive circuit 102 is supplied to the scan line drive circuit 102. A control signal Ctr2 for controlling the data line drive circuit 101 is supplied to the data line drive circuit 101.

  The scanning line drive circuit 102 generates scanning signals Gwr (1), Gwr (2), Gwr (3),..., Gwr (m-1), Gwr for scanning the scanning lines 12 row by row over the period of a frame. (M) is generated according to the control signal Ctr1. Furthermore, the scanning line drive circuit 102 supplies control signals Gcmp, Gel, and Gorst to the control lines in addition to the scanning signal Gwr. Note that the frame period is a period in which an image for one cut (frame) is displayed on the organic EL device 100. For example, if the frequency of the vertical synchronization signal included in the synchronization signal is 120 Hz, the period of one frame Is about 8.3 milliseconds.

  The data line drive circuit 101 applies, to the pixel circuits 110 located in the row selected by the scan line drive circuit 102, data signals Vd (1) and Vd (2) of potentials corresponding to gradation data of the pixel circuits 110. , And Vd (n) are supplied to the data lines 14 in the first, second,.

  FIG. 3 is a circuit diagram showing a configuration of the pixel circuit 110. As shown in FIG. As shown in FIG. 3, the pixel circuit 110 includes P-channel MOS transistors 121, 122, 123, 124, and 125, an organic EL element 30, and a capacitor 21. The above-described scan signal Gwr, control signals Gcmp, Gel, Gorrst and the like are supplied to the pixel circuit 110.

  The organic EL element 30 has a structure in which a light emitting function layer (light emitting layer) 32 is sandwiched between a pixel electrode (first electrode) 31 and a counter electrode (second electrode) 33 facing each other.

  The pixel electrode 31 is an anode that supplies holes to the light emitting functional layer 32, and is formed of a light transmitting conductive material. In the present embodiment, an ITO (Indium Tin Oxide) film having a film thickness of 200 nm, for example, is formed as the pixel electrode 31. The pixel electrode 31 is electrically connected to the drain of the transistor 124 and one of the source and the drain of the transistor 125.

  The counter electrode 33 is a cathode that supplies electrons to the light emitting functional layer 32, and is formed of a conductive material having light transparency and light reflectivity, such as an alloy of magnesium (Mg) and silver (Ag), for example. . The counter electrode 33 is a common electrode provided across the plurality of pixels 20 and is electrically connected to the power supply line 8. The power supply line 8 is supplied with a potential Vct which is the lower side of the power supply in the pixel circuit 110.

  The light emitting functional layer 32 includes a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and the like stacked in order from the pixel electrode 31 side. In the organic EL element 30, the light emitting function layer 32 emits light by combining the holes supplied from the pixel electrode 31 and the electrons supplied from the counter electrode 33 in the light emitting function layer 32.

  Further, on the element substrate 10, power supply lines 6 are provided extending in the X direction so as to intersect the respective power supply lines 19. Power supply line 6 may extend in the Y direction, or may extend in both the X direction and the Y direction. The source of the transistor 121 is electrically connected to the power supply line 6, and the drain is electrically connected to the other of the source and the drain of the transistor 123 and the source of the transistor 124. The power supply line 6 is supplied with a potential Vel which is the high power side of the power supply in the pixel circuit 110. Further, one end of the capacitor 21 is electrically connected to the power supply line 6. The transistor 121 functions as a driving transistor that allows current to flow according to the voltage between the gate and the source of the transistor 121.

  The gate of the transistor 122 is electrically connected to the scan line 12, and one of the source and the drain is electrically connected to the data line 14. The other of the source and the drain of the transistor 122 is electrically connected to the gate of the transistor 121, the other end of the capacitor 21, and one of the source or the drain of the transistor 123. The transistor 122 is electrically connected between the gate of the transistor 121 and the data line 14, and functions as a write transistor that controls the electrical connection between the gate of the transistor 121 and the data line 14.

  The gate of the transistor 123 is electrically connected to the control line, and the control signal Gcmp is supplied. The transistor 123 functions as a threshold compensation transistor that controls the electrical connection between the gate and the drain of the transistor 121.

  The gate of the transistor 124 is electrically connected to the control line, and the control signal Gel is supplied. The drain of the transistor 124 is electrically connected to one of the source and the drain of the transistor 125 and the pixel electrode 31 of the organic EL element 30. The transistor 124 functions as a light emission control transistor that controls the electrical connection between the drain of the transistor 121 and the pixel electrode 31 of the organic EL element 30.

  The gate of the transistor 125 is electrically connected to the control line, and the control signal Gorst is supplied. The other of the source and the drain of the transistor 125 is electrically connected to the power supply line 19 and supplied with a reset potential Vorst. The transistor 125 functions as an initialization transistor that controls the electrical connection between the power supply line 19 and the pixel electrode 31 of the organic EL element 30.

  FIG. 4 is a plan view showing the configuration of the pixel 20 (pixels 20B, 20G, and 20R). FIG. 5A is a cross-sectional view of the pixels 20B, 20G, and 20R along the X direction taken along line A-A 'shown in FIG. FIG. 5B is an enlarged sectional view of a part of the pixels 20R shown in FIG. 5A. FIG. 6A is a cross-sectional view of the pixel 20B along the Y direction taken along line B-B 'shown in FIG. FIG. 6B is a cross-sectional view of the pixel 20G along the Y direction taken along line C-C 'shown in FIG. FIG. 6C is a cross-sectional view of the pixel 20R along the Y direction with the line segment D-D 'shown in FIG.

  Each of the pixels 20B, 20G, and 20R has a rectangular shape in plan view as shown in FIG. 4 and FIGS. 5A and 5B, and the width direction is the X direction (the longitudinal direction is the Y direction). It is arranged to be parallel to. In addition, a pixel separation layer 29 is provided between the organic EL elements 30B, 30G, and 30R.

The pixel separation layer 29 is made of an insulating material and electrically insulates between the adjacent organic EL elements 30B, 30G, and 30R. In the present embodiment, for example, a silicon oxide (SiO ₂ ) film with a film thickness of 25 nm is formed as the pixel separation layer 29. The pixel separation layer 29 is provided to cover the peripheral portion of the pixel electrode 31 of each of the pixels 20B, 20G, and 20R. That is, the pixel separation layer 29 is provided with an opening 29CT for exposing a part of the pixel electrode 31 of each of the pixels 20B, 20G, and 20R. The opening 29CT has a rectangular shape in plan view, and defines a light emitting area of each pixel 20.

  As shown in FIGS. 5A, 5B and 6A to 6C, the organic EL elements 30B, 30G, and 30R disposed in the respective pixels 20B, 20G, and 20R are interlayer insulating layers (insulation layers (insulation layers). Resonant structure in which the reflective electrode 35, the reflective layer 36, the protective layer 37, the optical path adjustment layer 38, the pixel electrode 31, the light emitting functional layer 32, and the counter electrode 33 are stacked on the layer 34). (Cavity structure). In addition, in FIG. 4, FIG. 5 (a), (b) and FIG. 6 (a)-(c), illustration of the light emission functional layer 32 mentioned above and the counter electrode 33 is abbreviate | omitted.

  In the resonant structure, the light emitted from the light emitting functional layer 32 is repeatedly reflected between the reflective electrode 35 and the counter electrode 33, and the light between the reflective electrode 35 and the counter electrode 33 adjusted by the light path adjustment layer 38 is It is possible to enhance and emit light of a specific wavelength (resonance wavelength) according to the distance.

For the interlayer insulating layer 34, an insulating material such as silicon oxide (SiO ₂ ) is used, for example. Although only the transistor 124 is shown under the interlayer insulating layer 34 in FIG. 5A, in addition to the transistor 124, the scanning line 12, the data line 14, and the power source are shown under the interlayer insulating layer 34. The line 19, the control line, the power supply line 6, the transistors 121, 122, 123, 124, 125 constituting the pixel circuit 110, the capacitor 21 and the like are arranged. Irregularities may be formed on the surface of the interlayer insulating layer 34 according to these transistors, wirings, and the like, but it is preferable that the surface on which the reflective electrode 35 is formed be planarized.

  The reflective electrode 35 is divided for each pixel 20 and disposed. That is, the reflective electrode 35 is provided in each of the pixels 20B, 20G, and 20R. Further, a gap 35CT is formed between each of the adjacent reflective electrodes 35. Therefore, a gap 35CT is provided between each of the adjacent reflective electrodes 35 so as to be electrically separated for each pixel 20 so that different potentials can be applied.

  The reflective electrode 35 is made of a conductive material having light reflectivity, and is formed in a rectangular shape in plan view. The reflective electrode 35 is larger than the pixel electrode 31 and defines a reflective area of each pixel 20. In this embodiment, for example, aluminum (Al) and copper (Cu) having a film thickness of 100 nm to be the second layer 35b are formed on the titanium (Ti) film having a film thickness of 30 nm to be the first layer 35a. Alloy (AlCu) film is formed.

  The reflective electrode 35 is electrically connected to the drain of the transistor 124 described above through the first contact electrode 28 (see FIGS. 3 and 5A) disposed through the interlayer insulating layer 34. It is done. In addition, the reflective electrode 35 is electrically connected to one of the source and the drain (not shown) of the transistor 125 through the first contact electrode 28. For the first contact electrode 28, for example, a conductive material such as tungsten (W), titanium (Ti), titanium nitride (TiN) or the like can be used. In the present embodiment, the first layer 35 a of the reflective electrode 35 is connected to the first contact electrode 28.

The reflection enhancing layer 36 is for enhancing the reflection characteristics of the reflection electrode 35, and is made of, for example, an insulating material having light transparency. The reflection increasing layer 36 is disposed to cover the surface of the reflecting electrode 35. In the present embodiment, for example, a silicon oxide (SiO ₂ ) film having a thickness of 40 nm is formed as the reflection increasing layer 36.

  The protective layer 37 is provided to cover the surface of the reflective electrode 35 in which the gap 35CT is formed. The protective layer 37 has a first insulating film 39 and a buried insulating film 40. The first insulating film 39 is provided on the surface of the reflection enhancing layer 36, the reflective electrode 35, and the interlayer insulating layer 34, and is formed along the gap 35CT. Therefore, the first insulating film 39 has a recess 39a corresponding to the gap 35CT. The buried insulating film 40 is formed to fill the recess 39a. The protective layer 37 is planarized on the side in contact with the optical path adjustment layer 38 by the embedded insulating film embedded in the concave portion 37a.

In the present embodiment, for example, a silicon nitride (SiN) film having a thickness of 80 nm is formed as the first insulating film 39, and a silicon oxide (SiO ₂ ) film is formed as the embedded insulating film 40. For example, a silicon oxide (SiO ₂ ) film having a film thickness of 50 nm is formed as 42.

  The optical path adjustment layer 38 has insulating films 38 a and 38 b disposed on the surface of the protective layer 37. The optical path adjustment layer 38 performs optical path adjustment according to the optical distance between the reflective electrode 35 and the counter electrode 33 for each of the pixels 20B, 20G, and 20R.

Specifically, the film thickness of the optical path adjustment layer 38 increases in the order of the pixel 20B, the pixel 20G, and the pixel 20R. That is, in the pixel 20B, as shown in FIG. 6A, the insulating films 38a and 38b are omitted so that, for example, the resonance wavelength (peak wavelength at which the brightness is maximum) is 470 nm. In the pixel 20G, as shown in FIG. 6B, the insulating film 38a is provided so that, for example, the resonance wavelength is 540 nm. In the pixel 20R, as shown in FIG. 6C, the insulating films 38a and 38b are provided such that the resonance wavelength is, for example, 610 nm. In the present embodiment, as the insulating film 38a, for example, to form a film thickness of 40nm silicon oxide (SiO _2), as the insulating film 38b, for example to form a film thickness of 50nm silicon oxide (SiO _2). In addition, the reflection increasing layer 36 and the protection layer 37 also perform optical path adjustment according to the optical distance between the reflection electrode 35 and the counter electrode 33, and, for example, in the pixel 20 B, the light reflection layer 36 and the protection layer 37 The film thickness is set, for example, such that the resonant wavelength (peak wavelength at which the luminance is maximum) is 470 nm.

  Accordingly, blue (B) light having a peak wavelength of 470 nm is emitted from the pixel 20B, green (G) light having a peak wavelength of 540 nm is emitted from the pixel 20G, and 610 nm A red (R) light of a wavelength is emitted. In the organic EL device 100, the color purity of the display light emitted from each pixel 20 is enhanced by the organic EL element 30 having such a resonant structure.

The optical path adjustment layer 38 is provided between the organic EL elements 30B, 30G, and 30R. Specifically, the optical path adjustment layer 38 is made of the same kind of material as the embedded insulating film 40, and the optical path adjustment layer 38 is provided to cover the embedded insulating film 40. According to such a configuration, the optical path adjustment layer 38 can be processed according to the resonant wavelength without impairing the flatness of the surface of the protective layer 37 on the pixel electrode 31 side. In the present embodiment, the optical path adjustment layer 38 and the buried insulating film 40 are made of silicon oxide (SiO ₂ ).

  As shown in FIGS. 5A and 5B and FIGS. 6A to 6C, the pixel electrode 31 is disposed on the light path adjustment layer 38. The pixel electrode 31 is electrically connected to the reflective electrode 35 via the second contact electrode 41. Specifically, a contact hole 41CT is provided to penetrate through the protective layer 37 and the reflection increasing layer 36. The contact hole 41CT is located below the area where the pixel separation layer 29 is formed, which does not overlap with the opening 29CT in a plan view.

  The second contact electrode 41 has a first contact portion 41a and a second contact portion 41b. The first contact portion 41 a is disposed in the contact hole 41 CT, and is connected to the second layer 35 b of the reflective electrode 35. The second contact portion 41 b is disposed on the surface of the protective layer 37 and connected to the pixel electrode 31. In the present embodiment, for example, a titanium nitride (TiN) film is formed as the second contact electrode 41, and the second contact portion 41b is formed to have a thickness of 50 nm.

  As shown in FIGS. 5A and 5B and FIGS. 6A to 6C, a part of the optical path adjustment layer 38 is formed to overlap the second contact electrode 41. According to such a configuration, the second contact electrode 41 is disposed in the vicinity of the region between the organic EL elements 30B, 30G, and 30R without impairing the flatness of the surface on the pixel electrode 31 side of the protective layer 37. can do. Thus, the area not contributing to light emission can be reduced, and the aperture ratio of each pixel 20 can be increased.

  As shown in FIG. 6A, in the pixel 20B, the insulating films 38a and 38b constituting the optical path adjustment layer 38 are provided in a region overlapping a part of the second contact electrode 41 or the buried insulating film 40. . The insulating films 38a and 38b constituting the optical path adjustment layer 38 are not provided on part of the surface of the second contact electrode 41, and the conductive material constituting the pixel electrode 31 in the portion concerned is the second contact. The conductive material stacked on the electrode 41 and constituting the pixel electrode 31 is in contact with the second contact electrode 41.

  As shown in FIG. 6B, in the pixel 20G, the insulating film 38a constituting the optical path adjustment layer 38 is provided in a region overlapping a part of the second contact electrode 41 or the buried insulating film 40. A contact hole is provided in the insulating film 38 b, a conductive material forming the pixel electrode 31 is disposed in the contact hole, and the pixel electrode 31 is connected to the second contact electrode 41. In the pixel 20 </ b> G, the insulating film 38 b forming the light path adjustment layer 38 is provided on almost the entire surface except for the contact hole. More specifically, the insulating film 38 a constituting the optical path adjustment layer 38 is provided in a region overlapping a part of the second contact electrode 41, the reflective electrode 35, or the embedded insulating film 40.

  As shown in FIG. 6C, in the pixel 20R, the insulating films 38a and 38b constituting the optical path adjustment layer 38 overlap with a part of the second contact electrode 41, the reflective electrode 35, or the embedded insulating film 40. Provided in Then, contact holes are provided in the insulating films 38 a and 38 b, a conductive material forming the pixel electrode 31 is disposed in the contact holes, and the pixel electrode 31 is connected to the second contact electrode 41.

  The second insulating film 42 is patterned in the same shape as the second contact portion 41 b. That is, the second insulating film 42 is disposed between the first insulating film 39 and the second contact portion 41b, and has a shape which matches the second contact portion 41b in plan view. There is.

  Although not shown, the light emitting function layer 32 and the counter electrode 33 described above are disposed on the pixel electrode 31, and the surface of the element substrate 10 is further covered thereon, and the organic EL element 30 is By disposing a sealing layer (passivation film) that planarizes the surface, intrusion of moisture, oxygen, and the like to the organic EL element 30 is suppressed. The color filter layer 50 described above is disposed on the surface of the sealing layer.

  By the way, in the organic EL device 100 of the present embodiment, when patterning the second contact electrode 41 described above into a predetermined shape, the first insulating film 39 is made to function as an etching stopper of the second insulating film 42. Is possible. Thereby, even when the second insulating film 42 is patterned in the same shape as the second contact portion 41 b, the thickness of the first insulating film 39 under the second insulating film 42 has variation. You can prevent.

(Method of manufacturing organic EL device)
Specifically, a method of manufacturing the organic EL device 100 of the present embodiment will be described with reference to FIGS. 7 (a) to 7 (d). 7 (a) to 7 (d) are cross-sectional views for explaining a manufacturing process of the protective layer 37 and the second contact electrode 41 in the configuration of the organic EL device 100.

In the present embodiment, first, as shown in FIG. 7A, as the protective layer 37, a first insulating film 39 is formed on the reflective electrode 35 so as to cover the surface of the reflection-increasing layer 36. After forming the buried insulating film 40 embedded in the first insulating film 39, a second insulating film 42 covering the surface planarized by the buried insulating film 40 is formed. In the present embodiment, as described above, for example, a silicon nitride (SiN) film having a thickness of 80 nm is formed as the first insulating film 39, and a silicon oxide (SiO ₂ ) film is formed as the embedded insulating film 40. and, as the second insulating film 42, for example to form a silicon oxide (SiO ₂₎ film having a thickness of 50nm.

  Next, as shown in FIG. 7B, after the contact hole 41CT penetrating the high reflection layer 36, the first insulating film 39 and the second insulating film 42 is formed, the contact hole 41CT is buried. In the state, the conductive film 41EL covering the surface of the second insulating film 42 is formed. In the present embodiment, as described above, a titanium nitride (TiN) film having a thickness of 50 nm is formed as the conductive film 41EL.

  Next, as shown in FIG. 7C, after applying a resist on the surface of the conductive film 41EL, a mask layer 43 having a shape corresponding to the second contact portion 41b is formed using a photolithography technique. Thereafter, the conductive film 41EL and the second insulating film 42 are etched until the surface of the first insulating film 39 is exposed.

  At this time, a second insulating film (silicon oxide film) having an etching rate lower than that of the first insulating film 39 with respect to the first insulating film (silicon nitride film) 39 by dry etching using a fluorine-based gas. ) 42 can be selectively etched. Therefore, in the present embodiment, the etching selectivity (the etching rate of the second insulating film 42 / the etching rate of the first insulating film 39) of the first insulating film 39 and the second insulating film 42 is increased. The first insulating film 39 can function as an etching stopper of the second insulating film 42.

  Next, as shown in FIG. 7D, the mask layer 43 is removed. Thus, the first contact portion 41a connected to the reflective electrode 35 in the state of being buried in the contact hole 41CT, and the pixel electrode 31 connected to the surface in the state of being disposed on the second insulating film 42 A second contact electrode 41 having two contact portions 41b is formed.

  As described above, in the organic EL device 100 according to the present embodiment, even if the second insulating film 42 described above is patterned into the same shape as the second contact portion 41 b, the second insulating film 42 is formed under the second insulating film 42. It is possible to prevent variations in the thickness of a certain first insulating film 39. Therefore, in the organic EL device 100, the optical path adjustment between the reflective electrode 35 and the pixel electrode 31 can be accurately performed by adjusting the thickness of the optical path adjustment layer 38 disposed on the surface of the protective layer 37. Since it can do, it is possible to perform light emission operation of organic EL element 30 with good color reproducibility by resonance structure.

  Further, in the organic EL device 100 of the present embodiment, the transistor 124 and the reflective electrode 35 are electrically connected via the first contact electrode 28 described above, and the reflective electrode 35 and the reflective electrode 35 via the second contact electrode 41. The pixel electrode 31 is electrically connected. That is, the pixel electrode 31 is electrically connected to the transistor 124 via the reflective electrode 35.

  Thus, in the organic EL device 100 according to this embodiment, the reflective electrode 35 and the pixel electrode are different from the case where a part of the power supply line constitutes a reflective electrode or the case where the power supply line and the reflective electrode are electrically connected. By electrically connecting 31 with each other, the reflective electrode 35 and the pixel electrode 31 have the same potential. As a result, a defect or the like occurs in the insulating film (the reflective layer 36, the protective layer 37, the optical path adjustment layer 38, etc.) between the reflective electrode 35 and the pixel electrode 31 and a short circuit occurs between the power supply line and the pixel electrode ( Since shorting can be avoided, the yield can be further improved.

  Further, in the organic EL device 100 of the present embodiment, light emission from the highly reliable organic EL element 30 while controlling the potential applied from the transistor 124 to the pixel electrode 31 via the reflective electrode 35 with such a configuration. It is possible to perform an operation.

  Further, in the organic EL device 100 of the present embodiment, the first contact portion 41 a connected to the reflective electrode 35 in the state where the contact electrode 41 described above is embedded in the contact hole 41 CT, and the surface of the optical path adjustment layer 38 And a second contact portion 41 b connected to the pixel electrode 31 in a state of covering the second contact portion 41 b. In this case, it is possible to reliably connect the reflective electrode 35 and the pixel electrode 31 via the second contact electrode 41.

  Furthermore, in the organic EL device 100 according to the present embodiment, the end of at least a part of the light path adjustment layer 38 described above is positioned on the surface of the second contact portion 41 b to make the light path adjustment layer 38 into a predetermined shape. When patterning, it is possible to make the second contact portion 41 b function as an etching stopper of the light path adjustment layer 38 and to increase the aperture ratio of each pixel 20.

  Further, in the organic EL device 100 of the present embodiment, the thickness of the light path adjustment layer 38 is adjusted for each pixel 20 because the surface of the protective layer 37 in contact with the light path adjustment layer 38 is planarized. Thus, the optical path adjustment between the reflective electrode 35 and the pixel electrode 31 can be accurately performed. Accordingly, it is possible to perform the light emitting operation of the organic EL element 30 with good color reproducibility by the above-described resonant structure.

  Further, in the organic EL device 100 of the present embodiment, since the light path adjustment layer 38 disposed on the surface of the protective layer 37 described above is also planarized, the pixel electrode 31 disposed on the surface of the light path adjustment layer 38 Can be positioned outside the position where the recess 39a is formed. This makes it possible to increase the aperture ratio of the pixel 20, that is, the aperture area (light emission area) of the aperture 29CT that defines the light emission area of the pixel 20 described above.

Further, in the organic EL device 100 of the present embodiment, at least a part of the end portion of the light path adjustment layer 38 (the insulating films 38a and 38b) is disposed on the surface of the first insulating film 39 described above There is. Among them, silicon oxide (SiO ₂ ) is used for the optical path adjustment layer 38 (insulation films 38 a and 38 _b ) and the buried insulation film 40, and the first insulation film 39 is etched more than silicon oxide (SiO ₂ ). Low rate silicon nitride (SiN) is used.

  In this case, silicon oxide can be selectively etched with respect to silicon nitride by dry etching using, for example, a fluorine-based gas. Therefore, when patterning the optical path adjustment layer 38 into a predetermined shape, it is possible to make the first insulating film 39 function as an etching stopper of the optical path adjustment layer 38 while protecting the embedded insulating film 40.

Second Embodiment
(Organic EL device)
Next, an organic EL device 100A shown in FIGS. 8 and 9 will be described as a second embodiment of the present invention. In the following description, portions equivalent to those of the organic EL device 100 will be omitted from description and denoted by the same reference numerals in the drawings.

  FIG. 8A is a cross-sectional view of the pixels 20B, 20G, and 20R along the X direction, taken along line A-A 'shown in FIG. FIG. 8B is an enlarged sectional view of a part of the pixels 20R shown in FIG. 8A. FIG. 9A is a cross-sectional view of the pixel 20B along the Y direction, taken along line B-B 'shown in FIG. FIG. 9B is a cross-sectional view of the pixel 20G along the Y direction taken along line C-C 'shown in FIG. FIG. 9C is a cross-sectional view of the pixel 20R along the Y direction with the line segment D-D 'shown in FIG.

  The organic EL device 100A according to the second embodiment is different from the first embodiment in that a third insulating film 44 is provided as shown in FIGS. Further, the arrangement of the optical path adjustment layer 38 is different from that of the organic EL device 100 according to the first embodiment.

  Each of the pixels 20B, 20G, and 20R has a rectangular shape in plan view as shown in FIG. 4 and FIGS. 8A and 8B, and the lateral direction is the X direction (the longitudinal direction is the Y direction). It is arranged to be parallel to. In addition, a pixel separation layer 29 is provided between the organic EL elements 30B, 30G, and 30R.

  The protective layer 37 is provided to cover the surface of the reflective electrode 35 in which the opening 35CT is formed. The protective layer 37 includes a first insulating film 39, a buried insulating film 40, a second insulating film 42, and a third insulating film 44.

  The first insulating film 39 is provided on the surface of the reflection enhancing layer 36, the reflective electrode 35, and the interlayer insulating layer 34, and is formed along the gap 35CT. Therefore, the first insulating film 39 has a recess 39a corresponding to the gap 35CT. The buried insulating film 40 is formed to fill the recess 39a.

  The second insulating film 42 is provided between the second contact portion 41 b and the third insulating film 44 and is patterned in the same shape as the second contact portion 41 b. That is, the second insulating film 42 is disposed between the first insulating film 39 and the second contact portion 41b, and has a shape which matches the second contact portion 41b in plan view. There is.

The third insulating film 44 is formed to cover the surface planarized by the embedded insulating film 40 of the first insulating film 39. The protective layer 37 is planarized on the side in contact with the optical path adjustment layer 38 by the third insulating film 44. In the present embodiment, for example, a silicon nitride (SiN) film having a thickness of 80 nm is formed as the first insulating film 39, and a silicon oxide (SiO ₂ ) film is formed as the embedded insulating film 40. For example, a silicon oxide (SiO ₂ ) film having a thickness of 50 nm is formed as 42, and a silicon nitride (SiN) film having a thickness of 80 nm is formed as the third insulating film 44.

The end of the optical path adjustment layer 38 (insulating films 38 a and 38 b) is located on the buried insulating film 40. A third insulating film 44 is provided between the end of the light path adjustment layer 38 and the buried insulating film 40. The buried insulating film 40 and the optical path adjustment layer 38 are made of the same type of material, and are made of a material different from that of the third insulating film 44. In the present embodiment, the buried insulating film 40 and the optical path adjustment layer 38 are silicon oxide (SiO ₂ ), and the second insulating film 42 is a silicon nitride (SiN) film. Therefore, it is possible to form the optical path adjustment layer 38 with a different thickness for each pixel 20 without impairing the smoothness of the surface of the protective layer 37.

  In the pixel 20B, for example, the reflection enhancing layer 36, the first insulating film 39, and the third insulating film 44 have the reflective electrode 35 and the pixel electrode 31 so that the resonant wavelength (peak wavelength at which the brightness is maximum) is 470 nm. And between. In the pixel 20G, for example, the reflection increasing layer 36, the first insulating film 39, the third insulating film 44, and the insulating film 38a are provided between the reflective electrode 35 and the pixel electrode 31 so that the resonance wavelength is 540 nm. It is done. In the pixel 20R, for example, the reflection enhancing layer 36, the first insulating film 39, the third insulating film 44, the insulating film 38a, and the insulating film 38b serve as the reflective electrode 35 and the pixel electrode 31 so that the resonant wavelength is 610 nm. Provided between the

  The end portions of the optical path adjustment layer 38 (insulation films 38a and 38b) are located between the pixels 20R and 20G, between the pixels 20G and 20B, and between the pixels 20B and 20R. In the present embodiment, as shown in FIG. 1, since the arrangement of the pixels 20 is a stripe method, the end portion of the optical path adjustment layer 38 is provided in a stripe shape extending in the Y direction. As shown in FIGS. 10A and 10B, the end of the optical path adjustment layer 38 is located above the buried insulating film 40 in the gap 35CT between the adjacent reflective electrodes 35 in the X direction.

  As shown in FIGS. 8A and 9A, in the pixel 20B, the insulating films 38a and 38b that constitute the optical path adjustment layer 38 are not disposed substantially over the entire surface. Therefore, the conductive material forming the pixel electrode 31 is disposed on the surface of the second contact electrode 41, and the conductive material forming the pixel electrode 31 is in contact with the second contact electrode 41.

  As described above, the conductive material forming the pixel electrode 31 is formed on the second contact electrode 41 and the third insulating film 44. A part of the pixel separation layer 29 is stacked on the third insulating film 44. In FIG. 6A, the insulating films 38a and 38b are provided between the adjacent pixels B. However, as shown in FIG. 8A, in the present embodiment, the optical path adjustment layer 38 between the adjacent pixels B is provided. Is no longer needed. Therefore, in the organic EL device 100B according to the third embodiment, the light emitting function layer 32, the counter electrode 33, the color filter layer 50B, and the like can be formed on a flatter surface.

  As shown in FIGS. 8A and 9B, in the pixel 20G, the insulating film 38a constituting the optical path adjustment layer 38 is not disposed substantially over the entire surface. Then, a contact hole provided in the insulating film 38 b is provided, a conductive material forming the pixel electrode 31 is disposed in the contact hole, and the pixel electrode 31 is connected to the second contact electrode 41.

  In the pixel 20 </ b> G, the insulating film 38 b forming the light path adjustment layer 38 is provided on almost the entire surface except for the contact hole. More specifically, the insulating film 38 b constituting the optical path adjustment layer 38 is provided so as to overlap with a portion of the second contact electrode 41, and the third insulating film 38 b is formed above the reflective electrode 35 or the buried insulating film 40. It is laminated on the insulating film 44. In FIG. 6B, the insulating film 38a is provided between the adjacent pixels G. However, as shown in FIG. 8A, in the present embodiment, the insulating film 38a between the adjacent pixels G is unnecessary. It has become. Therefore, in the organic EL device 100B of the third embodiment, the light emitting function layer 32, the counter electrode 33, the color filter layer 50G, and the like can be formed on a flatter surface.

  As shown in FIGS. 8A, 8B and 9C, in the pixel 20R, contact holes provided in the insulating films 38a and 38b are provided, and the conductive material constituting the pixel electrode 31 is the same. The pixel electrode 31 is disposed in the contact hole, and connected to the second contact electrode 41. In the pixel 20R, the insulating films 38a and 38b constituting the light path adjustment layer 38 are provided on almost the entire surface except the contact holes. More specifically, the insulating films 38 a and 38 b constituting the optical path adjustment layer 38 are provided so as to overlap with a part of the second contact electrode 41, and the first upper surface of the reflective electrode 35 or the embedded insulating film 40 is 3 is laminated on the insulating film 44.

  Although not shown, the light emitting function layer 32 and the counter electrode 33 described above are disposed on the pixel electrode 31, and the surface of the element substrate 10 is further covered thereon, and the organic EL element 30 is By disposing a sealing layer (passivation film) that planarizes the surface, intrusion of moisture, oxygen, and the like to the organic EL element 30 is suppressed. The color filter layer 50 described above is disposed on the surface of the sealing layer.

  By the way, in the organic EL device 100A of the second embodiment, the thickness of the light path adjustment layer 38 is adjusted for each pixel 20 because the surface of the protective layer 37 in contact with the light path adjustment layer 38 is planarized. By doing this, the optical path adjustment between the reflective electrode 35 and the pixel electrode 31 can be accurately performed. Accordingly, it is possible to perform the light emitting operation of the organic EL element 30 with good color reproducibility by the above-described resonant structure.

  Further, in the organic EL device 100A of the second embodiment, since the light path adjustment layer 38 disposed on the surface of the protective layer 37 described above is also planarized, the pixels disposed on the surface of the light path adjustment layer 38 The end of the electrode 31 can be placed close to the recess 39a. This makes it possible to increase the aperture ratio of the pixel 20, that is, the aperture area (light emission area) of the aperture 29CT that defines the light emission area of the pixel 20 described above.

Further, in the organic EL device 100A of the second embodiment, the end of at least a part of the light path adjustment layer 38 (the insulating films 38a and 38b) is disposed on the surface of the third insulating film 44 described above. It is done. Among these, silicon oxide (SiO ₂ ) is used for the optical path adjustment layer 38 (insulation films 38 a and 38 _b ) and the embedded insulation film 48, and the second insulation film 42 is etched more than silicon oxide (SiO ₂ ). Low rate silicon nitride (SiN) is used.

  In this case, silicon oxide can be selectively etched with respect to silicon nitride by dry etching using, for example, a fluorine-based gas. Therefore, when patterning the optical path adjustment layer 38 into a predetermined shape, it is possible to make the second insulating film 42 function as an etching stopper of the optical path adjustment layer 38 while protecting the embedded insulating film 40.

  In the above-described embodiment, as shown in FIGS. 5A and 5B, the optical path adjustment layer 38 extends from the area overlapping the reflective electrode 35 of the organic EL element 30R to the gap 35CT of the embedded insulating film 40 or the reflective electrode 35. And the region overlapping the reflective electrode 35 of the adjacent organic EL element 30B. On the other hand, in the organic EL device 100A of the second embodiment, since the third insulating film 44 is provided as shown in FIGS. 8 (a) and 8 (b), the light path adjustment layer 38 is an adjacent organic EL element. The reflective electrode 35 can be disposed so as to extend from a region overlapping the reflective electrode 35 of the organic EL element 30R to a region overlapping a part of the embedded insulating film 40 without overlapping the reflective electrode 35B. Therefore, the area | region where the reflective electrode 35 of the organic EL element 30B and the optical path adjustment layer 38 overlap becomes unnecessary. Here, although the description has been made of the pixel 20B and the pixel 20R, the same is true between the pixel 20R and the pixel 20G and between the pixel 20G and the pixel 20B. Therefore, the area not contributing to light emission can be reduced, and the aperture ratio of each pixel 20 can be increased.

Third Embodiment
(Organic EL device)
Next, an organic EL device 200 shown in FIGS. 10 and 11 will be described as a third embodiment of the present invention. FIG. 10 is a plan view showing the configuration of the pixel 20 (pixels 20B, 20G, and 20R). FIG. 11 is a cross-sectional view of the pixel 20G taken along the line segment EE ′ shown in FIG. Moreover, in the following description, while description is abbreviate | omitted about the site | part equivalent to the said organic EL apparatus 100, suppose that the same code | symbol is attached | subjected in drawing.

  As shown in FIGS. 10 and 11, the organic EL device 200 is provided with a reflective electrode 60 constituted by a part of the power supply line 6 instead of the reflective electrode 35 divided and disposed for each of the pixels 20. There is. That is, the reflective electrode 60 is disposed in common to each of the pixels 20B, 20G, and 20R.

  Further, as shown in FIG. 3, the source of the transistor 121 and one end of the capacitor 21 are connected to the power supply line 6. Therefore, the reflective electrode 60 plays a role of reflecting the light from the light emitting function layer 32 side and supplying the electric potential Vel at the high power side of the power supply to the pixel circuit 110. Similar to the first contact electrode 28, the interlayer insulating layer (insulating layer) 34 includes a contact electrode.

  The organic EL device 200 further includes a relay electrode 61 electrically connected to the first contact electrode 28. In each pixel 20, a rectangular opening 60CT is formed in a plan view. The contact hole 60CT is a hole penetrating the reflective electrode 60, and the relay electrode 61 is disposed inside the opening 60CT.

  In this embodiment, an alloy (AlCu) film of aluminum (Al) and copper (Cu) with a film thickness of 100 nm is formed on a titanium (Ti) film with a film thickness of 30 nm, for example, as the reflective electrode 60 and the relay electrode 61. doing.

  Further, the organic EL device 200 is provided with an optical adjustment layer 62 instead of the protective layer 37 and the optical path adjustment layer 38 while the increase reflection layer 36 is omitted. The optical adjustment layer 62 covers the surface of the reflective electrode 60 in which the opening 60CT is formed, and also includes a first insulating film 63 having a recess 63a formed inside the opening 60CT, and a buried insulating film embedded in the recess 63a. A film 64 and a second insulating film 65 and a third insulating film 66 disposed on the surface of the first insulating film 63 are provided.

  The organic EL device 200 further includes a second contact electrode 67 electrically connected to the pixel electrode 31 instead of the second contact electrode 41. The second contact 67 electrode includes a first contact portion 67 a connected to the relay electrode 61 and a second contact portion 67 b connected to the pixel electrode 31. The contact hole 67CT is a hole penetrating the optical adjustment layer 62 (the first insulating film 63 and the second insulating film 65), and the first contact portion 67a is formed to be embedded in the contact hole 67CT. ing. The second contact portion 67 b is disposed on the surface of the second insulating film 65.

  Of the optical adjustment layer 62, the first insulating film 63, the embedded insulating film 64, and the second insulating film 65 function as a protective layer. The third insulating film 66 also functions as an optical path adjustment layer.

  The second insulating film 65 is patterned in the same shape as the second contact portion 67 b. That is, the second insulating film 65 is disposed between the first insulating film 63 and the second contact portion 67 b or between the embedded insulating film 64 and the second contact portion 67 b, and The second contact portion 67 b has a shape that matches in a plan view.

  The third insulating film 66 is arranged to cover the surfaces of the first insulating film 63 and the second contact portion 67 b. The pixel electrode 31 is connected to the contact electrode 67 (second contact portion 67 b) via the contact hole 31 CT formed in the third insulating film 66.

In the present embodiment, a silicon nitride (SiN) film is formed as the first insulating film 63, and silicon oxide (SiO ₂ ) is used as the embedded insulating film 64, the second insulating film 65, and the third insulating film 66. ) Forming a film.

  The film thickness of the optical adjustment layer 62 is larger in the order of the pixel 20B, the pixel 20G, and the pixel 20R. That is, in the pixel 20B, the first insulating film 63 is provided such that, for example, the resonance wavelength (peak wavelength at which the luminance is maximum) is 470 nm. In the pixel 20G, for example, the first insulating film 63 and the third insulating film 66 are provided so that the resonance wavelength is 540 nm. In the pixel 20R, for example, the first insulating film 63, the third insulating film 66, and the fourth insulating film (not shown) are provided so that the resonance wavelength is 610 nm.

  Although the reflection enhancing layer 36 is omitted in the present embodiment, the reflection reflecting layer 36 may be provided between the first insulating film 63 and the reflection electrode 60.

  In the organic EL device 200 having the above-described configuration, the transistor 124 and the pixel electrode 31 are electrically connected via the relay electrode 61 and the contact electrode 67. The contact electrode 67 is provided to cover the relay electrode 61 and the opening 60CT. The contact electrode 67 is provided so as to overlap with at least a part of the reflective electrode 60 in plan view. The contact electrode 67 has a light shielding property. According to this configuration, it is possible to improve the display quality by shielding the light incident from the opening 60CT by the contact electrode 67. In the present embodiment, as the contact electrode 67, for example, a titanium nitride (TiN) film having a thickness of 500 nm is formed.

  In the organic EL device 200 of the present embodiment, the first insulating film 63 can function as an etching stopper for the second insulating film 65 when the second contact electrode 67 described above is patterned into a predetermined shape. It is. Thereby, even when the second insulating film 65 is patterned in the same shape as the second contact portion 67 b, the thickness of the first insulating film 63 under the second insulating film 65 has variation. You can prevent.

(Method of manufacturing organic EL device)
Specifically, a method of manufacturing the organic EL device 200 of the present embodiment will be described with reference to FIGS. 12 (a) to 12 (d). 12 (a) to 12 (d) are cross-sectional views for explaining the manufacturing steps of the optical adjustment layer 62 and the second contact electrode 67 in the configuration of the organic EL device 200.

  In the present embodiment, first, as shown in FIG. 12A, as the optical adjustment layer 62, the first insulating film 63 is formed to cover the surface on which the reflective electrode 60 is disposed, and embedded in the recess 63a. After the buried insulating film 64 is formed, a second insulating film 65 covering the surface planarized by the buried insulating film 64 of the first insulating film 63 is formed.

  Next, as shown in FIG. 12B, after forming a contact hole 67CT penetrating the optical adjustment layer 62 (the second insulating film 65 and the fourth insulating film are not shown), the contact hole 67CT is formed. In the embedded state, the conductive film 67EL covering the surface of the second insulating film 65 is formed. In the present embodiment, as described above, a titanium nitride (TiN) film is formed as the conductive film 67EL.

  Next, as shown in FIG. 12C, after applying a resist on the surface of the conductive film 67EL, a mask layer 68 having a shape corresponding to the second contact portion 67b is formed using a photolithography technique. After that, the conductive film 67EL and the second insulating film 65 are etched until the surface of the first insulating film 63 is exposed.

  At this time, a second insulating film (silicon oxide film) having a lower etching rate than the first insulating film 63 with respect to the first insulating film (silicon nitride film) 63 by dry etching using a fluorine-based gas. ) 65 can be selectively etched. Therefore, in the present embodiment, the etching selectivity (the etching rate of the second insulating film 65 / the etching rate of the first insulating film 63) of the first insulating film 63 and the second insulating film 65 is increased. The first insulating film 63 can function as an etching stopper of the second insulating film 65.

  Next, as shown in FIG. 12D, the mask layer 68 is removed. Thus, the first contact portion 67a connected to the reflective electrode 60 in a state of being buried in the contact hole 67CT, and the pixel electrode 31 being connected on a surface of the second insulating film 65 A second contact electrode 67 having two contact portions 67b is formed.

  As described above, in the organic EL device 200 according to the present embodiment, even if the second insulating film 65 described above is patterned into the same shape as the second contact portion 67 b, the second insulating film 65 is formed under the second insulating film 65. It is possible to prevent the occurrence of variations in the thickness of a certain first insulating film 63. Therefore, in the organic EL device 200, similarly to the organic EL device 100, the optical path adjustment between the reflective electrode 60 and the pixel electrode 31 can be accurately performed by adjusting the thickness of the optical adjustment layer 62. Therefore, it is possible to perform the light emitting operation of the organic EL element 30 with good color reproducibility by the resonant structure.

(Electronics)
Next, a head mounted display 1000 shown in FIG. 13 will be described as an example of the electronic apparatus provided with the organic EL devices 100 and 200. FIG. 13 is a schematic view showing the configuration of the mount display 1000. As shown in FIG.

  As shown in FIG. 13, the head mounted display 1000 has two display parts 1001 provided corresponding to the left and right eyes. The observer M can see characters, images and the like displayed on the display unit 1001 by wearing the head mount display 1000 on the head like glasses. For example, when an image in which parallax is taken into consideration is displayed on the left and right display units 1001, it is possible to enjoy watching a stereoscopic image.

  The organic EL devices 100 and 200 are used in the display unit 1001. In the organic EL devices 100 and 200, it is possible to perform the light emitting operation of the organic EL element 30 with good color reproducibility by the above-described resonant structure. Therefore, by mounting the organic EL device 100 on the display unit 1001, it is possible to provide a head mounted display 1000 of high quality display in which the occurrence of point defects is suppressed.

In addition, this invention is not necessarily limited to the thing of the said embodiment, It is possible to add a various change in the range which does not deviate from the meaning of this invention.
Specifically, the electro-optical device to which the present invention is applied is not limited to the organic EL device including the organic EL device as the above-described light emitting device, and includes, for example, a self-luminous light emitting device such as an inorganic EL device The present invention can be widely applied to electro-optical devices.

  The electronic apparatus to which the present invention is applied is not limited to the head mount display 1000 described above, and, for example, a head-up display, an electronic view finder of a digital camera, a display unit such as a portable information terminal An electronic apparatus using an electro-optical device to which the present invention is applied can be mentioned.

  6 Power supply line 10 Element substrate 20 (20B, 20G, 20R) Pixel 28 First contact electrode 30 (30B, 30G, 30R) Organic EL element (light emitting element) 31 Pixel electrode (first electrode) 32: light emitting functional layer (light emitting layer) 33: counter electrode (second electrode) 34: interlayer insulating layer (insulating layer) 35: reflective electrode 35 CT: gap 36: reflective layer 37: protective layer 38: optical path adjustment layer 39 first insulating film 39a recess 40 embedded insulating film 41 second contact electrode 41a first contact portion 41b second contact portion 41CT contact hole 41EL conductive film 42 second insulating Film 43: Mask layer 44: Third insulating film 60: Reflective electrode 60CT: Opening (hole) 61: Relay electrode 62: Optical adjustment layer (protective layer, optical path adjustment layer) 63: first insulating film 63a: recessed portion 64: embedded insulating film 65: second insulating film 66: third insulating film 67: second contact electrode 67a: first contact portion 67b: second contact portion 67CT contact hole 67EL conductive film 68 mask layer E display region 100, 100A, 200 organic EL device (electro-optical device) 110 pixel circuit 124 transistor 1000 head mounted display (electronic device)

Claims (13)

An element substrate including a display area in which a plurality of pixels are arranged in a matrix;
The element substrate includes, for each of the pixels, a light emitting element and a transistor for driving the light emitting element.
The light emitting element is disposed on the transistor via an insulating layer, and includes a reflective electrode, a protective layer, an optical path adjustment layer, a first electrode, a light emitting layer, and a second electrode. Has a stacked structure,
The light emitting element is electrically connected to the transistor through a contact electrode,
In the protective layer, a contact hole penetrating the protective layer is formed.
The contact electrode includes a first contact portion disposed in a state of being buried in the contact hole and a second contact portion disposed on the surface of the protective layer,
The protective layer is disposed on a surface of the first insulating film disposed on the reflective electrode and a surface of the first insulating film, and is patterned in the same shape as the second contact portion. And 2 insulating films,
The reflective electrode is divided for each pixel and disposed.
The reflective electrode and the first electrode are electrically connected via the contact electrode,
The transistor and the reflective electrode are electrically connected through a contact electrode disposed through the insulating layer,
An electro-optical device characterized in that a gap is formed between each of the reflective electrodes which are divided and disposed for each pixel.   The electro-optical device according to claim 1, wherein the first insulating film is made of a material having a lower etching rate than the second insulating film. The first insulating film includes silicon nitride,
The electro-optical device according to claim 2, wherein the second insulating film contains silicon oxide.   The electro-optical device according to any one of claims 1 to 3, wherein an end portion of at least a part of the light path adjustment layer is located on a surface of the second contact portion. An opening is formed in the reflective electrode,
The first insulating film covers the surface of the reflective electrode in which the opening is formed, has a recess formed inside the opening, and includes a buried insulating film embedded in the recess. The electro-optical device according to any one of claims 1 to 4, which is characterized.   The optical path adjustment layer is disposed so as to cover the surface of the buried insulating film and to position at least a part of the end on the surface of the first insulating film. The electro-optical device according to claim 1. The first insulating film includes silicon nitride,
7. The electro-optical device according to claim 6, wherein the light path adjustment layer contains silicon oxide.   The electro-optical device according to any one of claims 1 to 7, wherein a reflection enhancing film is disposed on the surface of the reflective electrode. The reflective electrode is constituted by a part of a power supply line,
A hole is formed in the reflective electrode,
A relay electrode is disposed inside the hole,
The electro-optical device according to any one of claims 1 to 8, wherein the contact electrode is electrically connected to the transistor through the relay electrode.   An electronic apparatus comprising the electro-optical device according to any one of claims 1 to 9. An element substrate including a display area in which a plurality of pixels are arranged in a matrix;
The element substrate includes, for each of the pixels, a light emitting element and a transistor for driving the light emitting element.
The light emitting element is disposed on the transistor via an insulating layer, and includes a reflective electrode, a protective layer, an optical path adjustment layer, a first electrode, a light emitting layer, and a second electrode. Has a stacked structure,
The light emitting element is electrically connected to the transistor through a contact electrode,
In the protective layer, a contact hole penetrating the protective layer is formed.
The contact electrode includes a first contact portion disposed in a state of being buried in the contact hole and a second contact portion disposed on the surface of the protective layer,
The protective layer is disposed on a surface of the first insulating film disposed on the reflective electrode and a surface of the first insulating film, and is patterned in the same shape as the second contact portion. And 2 insulating films,
The reflective electrode is divided for each pixel and disposed.
The reflective electrode and the first electrode are electrically connected via the contact electrode,
The transistor and the reflective electrode are electrically connected through a contact electrode disposed through the insulating layer,
A manufacturing method of an electro-optical device in which a gap is formed between each of the reflective electrodes which are divided and disposed for each pixel.
Forming the reflective electrode on the insulating layer;
Forming the first insulating film on the reflective electrode;
Forming the second insulating film on the surface of the first insulating film;
Forming the contact hole penetrating the first insulating film and the second insulating film;
Forming a conductive film covering the surface of the second insulating film in a state of being buried in the contact hole;
Forming a mask layer of a predetermined shape on the surface of the conductive film;
Etching the conductive film and the second insulating film until the surface of the first insulating film is exposed;
Removing the mask layer;
Forming the first electrode above the first insulating film.   The method of manufacturing an electro-optical device according to claim 11, wherein a material having an etching rate lower than that of the second insulating film is used for the first insulating film. A silicon nitride film is formed as the first insulating film,
The method of manufacturing an electro-optical device according to claim 12, wherein a silicon oxide film is formed as the second insulating film.

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