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JP6508084B2 - Wavelength conversion optical device and laser device - Google Patents
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JP6508084B2 - Wavelength conversion optical device and laser device - Google Patents

Wavelength conversion optical device and laser device Download PDF

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JP6508084B2
JP6508084B2 JP2016026622A JP2016026622A JP6508084B2 JP 6508084 B2 JP6508084 B2 JP 6508084B2 JP 2016026622 A JP2016026622 A JP 2016026622A JP 2016026622 A JP2016026622 A JP 2016026622A JP 6508084 B2 JP6508084 B2 JP 6508084B2
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守 久光
守 久光
一智 門倉
一智 門倉
和哉 井上
和哉 井上
亮祐 西
亮祐 西
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Shimadzu Corp
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Description

本発明は、単一素子で基本波を3倍波又は4倍波に変換する疑似位相整合(Quasi Phase Matching)素子(QPM素子)を用いた波長変換光学装置及びレーザ装置に関する。   The present invention relates to a wavelength conversion optical device and a laser device using a quasi phase matching (QPM) element that converts a fundamental wave into a third wave or a fourth wave with a single element.

QPM素子は、周期分極反転構造を形成した波長変換素子からなる。このQPM素子において、基本波を3倍波(第3高調波)に変換させる方法が知られている。この方法は、第1の非線形結晶からなる2倍波変換部(SHG部)により基本波を2倍波(第2高調波)に波長変換し、2倍波変換部により変換された2倍波と、2倍波変換部で2倍波に変換されなかった基本波とを第2の非線形結晶からなる3倍波変換部(THG部)により、和周波として3倍波を発生させている。   The QPM element is composed of a wavelength conversion element in which a periodically poled structure is formed. There is known a method of converting a fundamental wave into a third harmonic (third harmonic) in this QPM element. This method wavelength-converts the fundamental wave into a second harmonic (second harmonic) by a second harmonic converter (SHG unit) formed of a first nonlinear crystal, and converts the second harmonic by the second harmonic converter. And the fundamental wave not converted to the second harmonic wave by the second harmonic wave converter are generated as a sum frequency by the third harmonic wave converter (THG unit) composed of the second nonlinear crystal.

しかし、2倍波変換部と3倍波変換部を1つの素子に直列に含み、素子全体が均一に温度調整される場合で、基本波波長のバラツキにより2倍波変換部と3倍波変換部とが同時に位相整合しない場合には、対処が必要となる。   However, in the case where the second harmonic conversion unit and the third harmonic conversion unit are included in series in one element, and the temperature of the entire element is uniformly adjusted, the second harmonic conversion unit and the third harmonic conversion are caused by the dispersion of fundamental wavelength. If the units do not simultaneously phase match, measures are required.

このような場合には、素子全体の温度と温度以外のパラメータを用いて屈折率を変化させ、2倍波変換部と3倍波変換部との両方を、与えられた波長で共に位相整合させる手法が考えられる。屈折率を変換させる方法としては、電圧印加が知られている(特許文献1〜特許文献5)。   In such a case, the refractive index is changed using parameters other than the temperature of the entire element and the temperature, and both the second harmonic conversion unit and the third harmonic conversion unit are phase-matched together at a given wavelength. A method can be considered. As a method for converting the refractive index, voltage application is known (Patent Document 1 to Patent Document 5).

また、特許文献6は、図7、図8に示すように、表面にプロトン交換光導波路105が形成されたQPM導波路を開示する。図7では、電極110によってコア部に分極反転方向によらずに一様に電圧が印加されている。図8では、分極反転部104の分極方向の向きに応じて電圧印加の向きが変わるように電極110が形成されている。いずれの例の場合でも分極反転部104の結晶に電圧が印加されることにより屈折率変化が発生して位相整合条件が調整される。   Patent Document 6 discloses a QPM waveguide in which a proton exchange optical waveguide 105 is formed on the surface as shown in FIGS. 7 and 8. In FIG. 7, a voltage is uniformly applied to the core portion by the electrode 110 regardless of the polarization inversion direction. In FIG. 8, the electrode 110 is formed such that the direction of voltage application changes in accordance with the direction of the polarization direction of the polarization inversion unit 104. In any of the examples, when a voltage is applied to the crystal of the polarization inversion unit 104, a change in refractive index occurs to adjust the phase matching condition.

また、非特許文献1では、図9に示すように、3倍波変換部THGをファンアウト状の分極反転パターンで形成し、素子を上下方向にずらすことにより、分極反転周期を変化させて、いずれかの部分で2倍波変換部SHGと3倍波変換部THGが同時に位相整合できるようにしている。   Further, in Non-Patent Document 1, as shown in FIG. 9, the third harmonic wave conversion part THG is formed in a fanned out polarization inversion pattern, and the element is shifted in the vertical direction to change the polarization inversion period, The second harmonic wave conversion unit SHG and the third harmonic wave conversion unit THG can be simultaneously phase-matched in any part.

また、特許文献7には、図10に示すように、接合された2つの非線形光学結晶20A、20Bに例えば一様に作用する圧力及び/又は温度を調整することにより位相整合条件を満たすように調整する圧力調整手段32を有する波長変換装置が記載されている。   Further, in Patent Document 7, as shown in FIG. 10, phase adjustment conditions are satisfied by adjusting, for example, the pressure and / or temperature that uniformly acts on two joined nonlinear optical crystals 20A and 20B. A wavelength converter is described having pressure adjusting means 32 for adjusting.

特開平3−283686号公報Japanese Patent Application Laid-Open No. 3-283686 特開平5−100266号公報Unexamined-Japanese-Patent No. 5-100266 特開平5−142608号公報Unexamined-Japanese-Patent No. 5-142608 特開平5−289135号公報Japanese Patent Laid-Open No. 5-289135 特開平6−273816号公報JP 6-273816 A 特開平7−270632号公報JP 7-270632 A 特開2010−271633号公報JP, 2010-271633, A

Junji Hirohashi et al.:PPMgSLT device for cascaded 355nm generationJunji Hirohashi et al .: PPMgSLT device for cascaded 355 nm generation

特許文献1〜特許文献6では、結晶に電圧が印加されることにより屈折率が変化し位相整合条件が調整される。しかし、周期的分極反転部に一様に電圧が印加されると、分極方向によって屈折率変化が異なるため、分極が変化する界面で反射が生じ、損失が発生する。この損失をなくすためには、分極毎に電圧印加方向を逆転させることが必要であるが、微細な加工が必要であり、電極同士の短絡も発生しやすい。   In Patent Documents 1 to 6, when a voltage is applied to the crystal, the refractive index changes and the phase matching condition is adjusted. However, when a voltage is uniformly applied to the periodical polarization inversion portion, the change in refractive index changes depending on the polarization direction, so that reflection occurs at the interface where the polarization changes and a loss occurs. In order to eliminate this loss, it is necessary to reverse the voltage application direction for each polarization, but fine processing is necessary, and a short circuit between electrodes is likely to occur.

非特許文献1では、高出力を得るために、しばしばビームの径を広げるとともに作用長を長く取る必要がある。この場合、素子では光軸に垂直方向に分極反転周期が連続的に変化するため、ビーム径が大きくなると、位相整合に寄与しない基本波成分の効率が低下する。また、作用長が長いと位相整合温度特性の許容幅は狭くなるが、素子では厳密に位相整合するのは、光軸に垂直な方向の1点であるため、効率が低下する。   In Non-Patent Document 1, in order to obtain high output, it is often necessary to increase the diameter of the beam and to increase the working length. In this case, since the polarization inversion period changes continuously in the direction perpendicular to the optical axis in the element, the efficiency of the fundamental wave component that does not contribute to phase matching decreases as the beam diameter increases. In addition, although the allowable range of the phase matching temperature characteristic becomes narrower as the working length is longer, the efficiency is lowered because one element in the device in which phase matching is strictly performed is one point in the direction perpendicular to the optical axis.

本発明の課題は、界面での反射による損失がなく、大きなビーム径、長い作用長での効率低下を回避することができる波長変換光学装置及びレーザ装置を提供する。   The object of the present invention is to provide a wavelength conversion optical device and a laser device which have no loss due to reflection at an interface, and can avoid the decrease in efficiency with a large beam diameter and a long working length.

上記課題を解決するために、本発明は、第1分極反転周期を持つ平行な分極反転パターンからなる第1の周期的分極反転部を有し基本波を2倍波に変換する2倍波変換部と、前記2倍波変換部及び光の進行方向に直列に配置され前記第1分極反転周期よりも短い第2分極反転周期を持つ平行な分極反転パターンからなる第2の周期的分極反転部を有し前記基本波と前記2倍波とに基づき3倍波を生成する3倍波変換部とを備える疑似位相整合素子と、前記疑似位相整合素子の一方の面に配置され、直列に配置された前記2倍波変換部及び前記3倍波変換部の温度を調整する温度調整素子と、前記疑似位相整合素子の他方の面に配置され、直列に配置された前記2倍波変換部及び前記3倍波変換部に圧力を印加する圧力印加部を備え、前記温度調整素子の温度と前記圧力印加部の圧力とを変化させることにより前記2倍波変換部及び前記3倍波変換部を同時に位相整合させることを特徴とする。   In order to solve the above-mentioned subject, the present invention has a first periodical polarization inversion part which consists of a parallel polarization inversion pattern having a first polarization inversion period, and a second harmonic conversion which converts a fundamental wave to a second harmonic wave. And a second periodical polarization inversion unit comprising a parallel polarization inversion pattern arranged in series in the traveling direction of light and the second harmonic wave conversion unit and having a second polarization inversion period shorter than the first polarization inversion period And arranged on one surface of the pseudo phase matching element, and disposed in series, the pseudo phase matching element including a third harmonic conversion unit that generates a third harmonic based on the fundamental wave and the second harmonic. Temperature adjustment element for adjusting the temperature of the second harmonic wave converter and the third harmonic wave converter, the second harmonic wave converter disposed in series on the other surface of the pseudo phase matching element, and A pressure application unit for applying a pressure to the third harmonic wave conversion unit; Characterized in that to simultaneously phase matching the second harmonic conversion unit and the third harmonic conversion unit by changing the pressure of the temperature and the pressure applying part of the settling device.

また、本発明は、第1分極反転周期を持つ平行な分極反転パターンからなる第1の周期的分極反転部を有し基本波を2倍波に変換する2倍波変換部と、前記2倍波変換部及び光の進行方向に直列に配置され前記第1分極反転周期よりも短い第3分極反転周期を持つ平行な分極反転パターンからなる第3の周期的分極反転部を有し前記2倍波とに基づき4倍波を生成する4倍波変換部とを備える疑似位相整合素子と、前記疑似位相整合素子の一方の面に配置され、直列に配置された前記2倍波変換部及び前記4倍波変換部の温度を調整する温度調整素子と、前記疑似位相整合素子の他方の面に配置され、直列に配置された前記2倍波変換部及び前記4倍波変換部に圧力を印加する圧力印加部を備え、前記温度調整素子の温度と前記圧力印加部の圧力とを変化させることにより前記2倍波変換部及び前記4倍波変換部を同時に位相整合させることを特徴とする。   The present invention also provides a double wave conversion unit having a first periodical polarization inversion unit consisting of parallel polarization inversion patterns having a first polarization inversion period, and converting a fundamental wave into a second harmonic wave; Wave conversion part, and a third periodical polarization inversion part comprising a parallel polarization inversion pattern arranged in series in the traveling direction of light and having a third polarization inversion period shorter than the first polarization inversion period; A quasi phase matching element including a fourth harmonic conversion unit that generates a fourth harmonic based on waves, and the second harmonic conversion unit disposed on one surface of the quasi phase matching device and disposed in series A temperature adjustment element for adjusting the temperature of the fourth harmonic conversion unit, and pressure applied to the second harmonic conversion unit and the fourth harmonic conversion unit disposed on the other surface of the quasi phase matching element and disposed in series The temperature adjustment element and the pressure application unit. Characterized in that to simultaneously phase matching the second harmonic conversion unit and the fourth harmonic conversion unit by changing the force.

本発明によれば、圧力印加部が第1の周期的分極反転部と第2の周期的分極反転部に圧力を印加して圧力を変化させ、温度調整素子が2倍波変換部と3倍波変換部の温度を変化させることにより、2倍波変換部と3倍波変換部とを同時に位相整合させる。この場合、周期的分極反転部の分極の方向がどちらを向いていても圧力による屈折率変化は等しいため、分極が変化する界面で反射は生ぜず、損失は生じない。   According to the present invention, the pressure application unit applies pressure to the first periodic polarization inversion unit and the second periodic polarization inversion unit to change the pressure, and the temperature control element is tripled with the second harmonic conversion unit. By changing the temperature of the wave conversion unit, the second harmonic conversion unit and the third harmonic conversion unit are simultaneously phase-matched. In this case, since the refractive index changes due to pressure are the same regardless of the direction of polarization of the periodically poled portion, no reflection occurs at the interface where the polarization changes, and no loss occurs.

また、分極反転パターンは、2倍波変換部と3倍波変換部の各々の内部では平行な細線パターンであるため、大きなビーム径、長い作用長での効率低下を回避することができる。   In addition, since the polarization inversion pattern is a parallel thin line pattern inside each of the second harmonic wave conversion unit and the third harmonic wave conversion unit, it is possible to avoid the efficiency drop with a large beam diameter and a long working length.

本発明の実施例1の波長変換光学装置の座標軸(X,Y,Z軸)のX軸(光の進行方向)に沿った断面図である。It is sectional drawing along the X-axis (the advancing direction of light) of the coordinate axis (X, Y, Z axis) of the wavelength conversion optical apparatus of Example 1 of this invention. 本発明の実施例1の波長変換光学装置のZ−Z間の断面図である。It is sectional drawing between ZZ of the wavelength conversion optical apparatus of Example 1 of this invention. 本発明の実施例1の波長変換光学装置のX−X間の断面図である。It is sectional drawing between XX of the wavelength conversion optical apparatus of Example 1 of this invention. 本発明の実施例1の波長変換光学装置の基本波波長の設計時想定値からのずれが生じたときに2倍波変換部と3倍波変換部を同時に位相整合させるために必要な設計時想定温度との差分と設計時想定値圧力との差分を示す図である。Design time required to simultaneously phase match the second harmonic conversion unit and the third harmonic conversion unit when the fundamental wavelength of the wavelength conversion optical device according to the first embodiment of the present invention deviates from the designed value at design time It is a figure which shows the difference of the assumption temperature and the difference of design time assumption value pressure. 本発明の実施例3の波長変換光学装置の断面図である。It is sectional drawing of the wavelength conversion optical apparatus of Example 3 of this invention. 本発明の実施例4の波長変換光学装置を含むレーザ装置を示す図である。It is a figure which shows the laser apparatus containing the wavelength conversion optical apparatus of Example 4 of this invention. 特許文献6に記載された波長変換素子の一例を示す図である。It is a figure which shows an example of the wavelength conversion element described in patent document 6. FIG. 特許文献6に記載された波長変換素子の他の一例を示す図である。It is a figure which shows another example of the wavelength conversion element described in patent document 6. FIG. 非特許文献1に記載された波長変換素子の一例を示す図である。It is a figure which shows an example of the wavelength conversion element described in the nonpatent literature 1. FIG. 特許文献7に記載された波長変換素子の一例を示す図である。It is a figure which shows an example of the wavelength conversion element described in patent document 7. FIG.

以下、本発明の波長変換光学装置及びレーザ装置の実施の形態を図面に基づいて詳細に説明する。   Hereinafter, embodiments of a wavelength conversion optical device and a laser device of the present invention will be described in detail based on the drawings.

特許文献7では、QPM素子を使用しておらず、2つの非線形光学結晶20A、20Bの接合面が光軸と平行であるのに対して、本発明の波長変換光学装置は、前半部分である2倍波変換部と後半部分である3倍波変換部とが光軸方向に直列に並べていることを特徴とする。   In Patent Document 7, the QPM element is not used, and the junction surface of the two nonlinear optical crystals 20A and 20B is parallel to the optical axis, whereas the wavelength conversion optical device of the present invention is the front half. A second harmonic wave conversion unit and a third harmonic wave conversion unit in the second half are arranged in series in the optical axis direction.

また、本発明は、直列に配置された異なる部分である2倍波変換部と3倍波変換部の位相整合条件が圧力を調整することにより(温度変化も併用して)同時に満たされることを特徴とする。   Further, according to the present invention, the phase matching conditions of the second harmonic wave conversion unit and the third harmonic wave conversion unit, which are different portions arranged in series, are simultaneously satisfied by adjusting the pressure (in combination with the temperature change). It features.

図1は、本発明の実施例1の波長変換光学装置の座標軸(X,Y,Z軸)のX軸(光の進行方向)に沿った断面図である。図2は、本発明の実施例1の波長変換光学装置のZ−Z間の断面図である。図3は、本発明の実施例1の波長変換光学装置のX−X間の断面図である。   FIG. 1 is a cross-sectional view along the X-axis (the traveling direction of light) of the coordinate axes (X, Y, Z axes) of the wavelength conversion optical device of Example 1 of the present invention. FIG. 2 is a cross-sectional view of the wavelength conversion optical device of the first embodiment of the present invention taken along the line Z-Z. FIG. 3 is a cross-sectional view of the wavelength conversion optical device of Example 1 of the present invention taken along line X-X.

図1に示す波長変換光学装置は、2倍波変換部1、3倍波変換部2、温調素子(本発明の温度調整素子に対応)3、圧力印加部4を備える。2倍波変換部1及び3倍波変換部2は、一体化されたQPM素子からなる。   The wavelength conversion optical device shown in FIG. 1 includes a second harmonic wave conversion unit 1, a third harmonic wave conversion unit 2, a temperature control element (corresponding to the temperature control element of the present invention) 3, and a pressure application unit 4. The second harmonic conversion unit 1 and the third harmonic conversion unit 2 are formed of an integrated QPM element.

2倍波変換部1及び3倍波変換部2は、非線形結晶からなり、この結晶としては、MgドープのLiNbO3、即ちMgLNを用いる。あるいは、2倍波変換部1及び3倍波変換部2の結晶として、MgSLTを用いても良い。   The second harmonic conversion unit 1 and the third harmonic conversion unit 2 are made of non-linear crystals, and Mg doped LiNbO3, that is, MgLN is used as this crystal. Alternatively, MgSLT may be used as a crystal of the second harmonic wave conversion unit 1 and the third harmonic wave conversion unit 2.

光軸は、結晶のX結晶軸及びY結晶軸が作る面内に平行であり、光の基本波波長λは、1550nm付近であり、偏光方向はZ軸結晶と一致している。   The optical axis is parallel to the plane formed by the X crystal axis and the Y crystal axis of the crystal, the fundamental wave wavelength λ of the light is around 1550 nm, and the polarization direction coincides with the Z axis crystal.

2倍波変換部1は、図3に示すように、第1分極反転周期を持つ平行な分極反転パターン1aからなる第1の周期的分極反転部を有し、入射される基本波を2倍波に変換する。   As shown in FIG. 3, the second harmonic wave conversion unit 1 has a first periodical polarization inversion unit consisting of parallel polarization inversion patterns 1a having a first polarization inversion period, and doubles the incident fundamental wave. Convert to waves.

3倍波変換部2は、2倍波変換部1及び光の進行方向に直列に配置され、第1分極反転周期よりも短い第2分極反転周期を持つ平行な分極反転パターン2aからなる第2の周期的分極反転部を有し、2倍波変換部1で波長変換されなかった基本波と2倍波変換部1で波長変換された2倍波とから和周波である3倍波を生成する。   The third harmonic wave conversion unit 2 is a second harmonic wave conversion unit 1 and a second polarization inversion pattern 2a parallel to the light traveling direction and having a second polarization inversion cycle shorter than the first polarization inversion cycle. The third harmonic which is a sum frequency is generated from the fundamental wave which has a periodical polarization inversion part of the following and is not wavelength-converted by the second harmonic wave converter 1 and the second harmonic wave wavelength-converted by the second harmonic wave converter 1. Do.

温調素子3は、ペルチェ素子等からなり、直列に配置された2倍波変換部1及び3倍波変換部2の下面(結晶のZ側)に配置され、2倍波変換部1及び3倍波変換部2の温度を調整する。 The temperature control element 3 is formed of a Peltier element or the like, and is disposed on the lower surface (Z side of the crystal) of the second harmonic wave conversion unit 1 and the third harmonic wave conversion unit 2 disposed in series. The temperature of the third harmonic wave conversion unit 2 is adjusted.

圧力印加部4は、油圧機構やピエゾ素子等からなり、直列に配置された2倍波変換部1及び3倍波変換部2の上面(結晶のZ側)に配置され、2倍波変換部1及び3倍波変換部2に圧力を印加する。 The pressure application unit 4 includes a hydraulic mechanism, a piezo element, etc., and is disposed on the upper surface (Z + side of the crystal) of the second harmonic wave conversion unit 1 and the third harmonic wave conversion unit 2 disposed in series. A pressure is applied to the unit 1 and the third harmonic wave conversion unit 2.

Z軸方向へ引っ張ることができるように、結晶である2倍波変換部1及び3倍波変換部2と温調素子3と圧力印加部4とは、接着剤等により接着されている。   The second harmonic wave conversion unit 1 and the third harmonic wave conversion unit 2 which are crystals, the temperature control element 3 and the pressure application unit 4 are adhered by an adhesive or the like so that they can be pulled in the Z-axis direction.

例えば、圧力p0をZ+方向から下方に印加しているとき(下方の向きを圧力の正方向とする)、ある条件、例えば、基本波波長1550nm、素子温度35℃で2倍波変換部1と3倍波変換部2をともに位相整合させるように設計しておく。   For example, when the pressure p0 is applied downward from the Z + direction (the downward direction is the positive direction of the pressure), certain conditions such as the fundamental wave wavelength 1550 nm and the element temperature 35 ° C. The third harmonic wave conversion unit 2 is designed to be phase-matched together.

例えば、波長λ=1550nm、温度T=35℃、2倍波変換部1の分極反転周期Λ=20.87μm、3倍波変換部2の分極反転周期Λ=7.09μm、圧力p=0MPaのときに位相整合する。 For example, wavelength λ 0 = 1550 nm, temperature T 0 = 35 ° C., polarization inversion period Λ S of the second harmonic conversion unit 1 = 20.87 μm, polarization inversion period Λ T of the third harmonic conversion unit 2 = 7.09 μm, pressure Phase matching is performed when p 0 = 0 MPa.

図4は、基本波波長の設計時想定値からのずれが生じたときに2倍波変換部1と3倍波変換部2を同時に位相整合させるために必要な設計時想定温度との差分と設計時想定値圧力との差分を示している。   FIG. 4 shows the difference between the estimated temperature at the design time required for simultaneously phase matching the second harmonic conversion unit 1 and the third harmonic conversion unit 2 when the fundamental wave wavelength deviates from the design estimated value. The difference from the design-time assumed pressure is shown.

基本波の波長のばらつきΔλ(nm)に対して、図4に示すように位相整合温度をΔT、印加圧力をΔp変化させると、2倍波変換部1と3倍波変換部2とが同時に位相整合する。   When the phase matching temperature is ΔT and the applied pressure is changed by Δp as shown in FIG. 4 with respect to the dispersion Δλ (nm) of the wavelength of the fundamental wave, the second harmonic wave conversion unit 1 and the third harmonic wave conversion unit 2 simultaneously Phase match.

基本波光源としてファイバレーザを用いる場合、基本波長のばらつきΔλは、典型的には|Δλ|<0.1nmである。この範囲のばらつきΔλに対しては、|ΔT|<0.01K、|Δp|<100MPaで対応できる。なお、Kはケルビンである。Tは絶対温度である。   When using a fiber laser as the fundamental wave light source, the variation Δλ of the fundamental wavelength is typically | Δλ | <0.1 nm. The variation Δλ in this range can be accommodated by | ΔT | <0.01 K and | Δp | <100 MPa. K is Kelvin. T is an absolute temperature.

このように、基本波の波長のばらつきΔλに対して、温調素子3の温度と圧力印加部4の圧力とを変化させることにより2倍波変換部1及び3倍波変換部2を同時に位相整合させることができる。   As described above, by changing the temperature of the temperature adjustment element 3 and the pressure of the pressure application unit 4 with respect to the variation Δλ of the wavelength of the fundamental wave, the second harmonic wave conversion unit 1 and the third harmonic wave conversion unit 2 are simultaneously phased. It can be matched.

次に、ΔTとΔpの求め方について説明する。まず、結晶に圧力が印加されない状態での温度付き分散曲線をn(λ,T)とする。2倍波変換部1の分極反転周期をΛとし、3倍波変換部2の分極反転周期をΛとする。設計では、波長λ、温度T、圧力pのときに2倍波変換部1と3倍波変換部2が同時に位相整合しているとする。 Next, how to determine ΔT and Δp will be described. First, the temperature-applied dispersion curve in a state where no pressure is applied to the crystal is n (λ, T). Let the polarization inversion period of the second harmonic wave conversion unit 1 be Λ S and let the polarization inversion period of the third harmonic wave conversion unit 2 be Λ T. In the design, it is assumed that the second harmonic conversion unit 1 and the third harmonic conversion unit 2 are simultaneously phase-matched at the wavelength λ 0 , the temperature T 0 , and the pressure p 0 .

関数ni(λ,T)i=1,2,3…を式(1)により定義する。
ni(Δλ,ΔT,Δp)≡n((λ+Δλ)/i,T+ΔT,p+Δp)
…(1)
以上の表記を用いると、ΔT=0,Δp=0のとき、2倍波変換部1と3倍波変換部2では、それぞれ
Λ=λ/{2n(0,0,0)−2n(0,0,0)}…(2)
Λ=λ/{3n(0,0,0)−n(0,0,0)−2n(0,0,0)}
…(3)
となっている。式(2),(3)の状態からT→T+ΔT、p→p+Δpとして2倍波変換部1と3倍波変換部2ともに、位相整合波長がλ→λ+Δλに変化するということは、以下の式(4),(5)が同時に成立することである。
Λ=(λ+Δλ)/{2n(Δλ,ΔT,Δp)−2n(Δλ,ΔT,Δp)}
…(4)
Λ=(λ+Δλ)/{3n(Δλ,ΔT,Δp)−n(Δλ,ΔT,Δp)−2n(Δλ,ΔT,Δp)} …(5)
式(4),(5)において、波長のずれΔλを所与の量とすれば、式(4),(5)の2式を2つの変数ΔT,Δpを調整することにより、成立させることになる。変数が2個で式が2つであるので、一般的には2つの変数ΔT,Δpを求めることができる。
The function ni (λ, T) i = 1, 2, 3... Is defined by equation (1).
ni (Δλ, ΔT, Δp) ≡ n ((λ 0 + Δλ) / i, T 0 + ΔT, p 0 + Δp)
... (1)
Using the above notation, when ΔT = 0 and Δp = 0, 2 S = λ 0 / {2 n 2 (0,0,0) − in the second harmonic wave conversion unit 1 and the third harmonic wave conversion unit 2, respectively. 2n 1 (0, 0, 0)} ... (2)
Λ T = λ 0 / {3 n 3 (0, 0, 0)-n 1 (0, 0)-2 n 2 (0, 0, 0)}
... (3)
It has become. From the state of equations (2) and (3), the phase matching wavelength is λ 0 → λ 0 + Δλ for both the second harmonic wave conversion unit 1 and the third harmonic wave conversion unit 2 as T 0 → T 0 + ΔT and p 0 → p 0 + Δp. That is, the following equations (4) and (5) are simultaneously established.
Λ S = (λ 0 + Δλ) / {2 n 2 (Δλ, ΔT, Δp) -2 n 1 (Δλ, ΔT, Δp)}
... (4)
Λ T = (λ 0 + Δλ) / {3 n 3 (Δλ, ΔT, Δp) -n 1 (Δλ, ΔT, Δp) -2 n 2 (Δλ, ΔT, Δp)} (5)
In the equations (4) and (5), assuming that the wavelength shift Δλ is a given amount, the two equations (4) and (5) are satisfied by adjusting the two variables ΔT and Δp. become. Since there are two variables and two equations, generally, two variables ΔT and Δp can be obtained.

次に、実施例1において計算に用いたn(λ,T,p)について説明する。結晶がMgLNである場合、主応力σ11、σ22、σ33に対して、係数π31、π33を用いて
Δ(1/n )=π31・σ11+π31・σ22+π33・σ33…(6)
となる。
Next, n (λ, T, p) used for calculation in the first embodiment will be described. If crystals are MgLN, principal stress σ 11, σ 22, with respect to sigma 33, the coefficient [pi 31, delta using a π 33 (1 / n e 2 ) = π 31 · σ 11 + π 31 · σ 22 + π 33 · σ 33 (6)
It becomes.

屈折率の変化が微小であるので、式(6)は、式(7)に変形できる。
Δn=−n (π31・σ11+π31・σ22+π33・σ33)/2…(7)
MgLNのZ板を用いてZ方向に圧力pを印加すると、σ33=−p、σ11=σ22=0と仮定する。すると、
Δn=n ・π33・p/2…(8)
異常光屈折率nのセルマイヤ方程式をn(λ,T)とし、n(λ,T,p)を
n(λ,T,p)≡n+Δn=n+(n ・π33・p)/2=n(λ,T)・π33・p/2とした。π33は0.32×10−12〔Pa−1〕とした。
Equation (6) can be transformed into equation (7) because the change in refractive index is minute.
Δn e = -n e 3 (π 31 · σ 11 + π 31 · σ 22 + π 33 · σ 33) / 2 ... (7)
When pressure p is applied in the Z direction using a MgLN Z plate, it is assumed that σ 33 = −p, σ 11 = σ 22 = 0. Then,
Δn e = n e 3 · π 33 · p / 2 ... (8)
The Sellmeier equations extraordinary refractive index n e and n e (λ, T), n (λ, T, p) and n (λ, T, p) ≡n e + Δn e = n e + (n e 3 · It was set as (pi) 33 * p) / 2 = ne ((lambda, T) 3 * (pi) 33 * p / 2. (pi) 33 was 0.32 * 10 <-12> [Pa <-1> ].

このように実施例1の波長変換光学装置によれば、圧力印加部4が第1の周期的分極反転部と第2の周期的分極反転部に圧力を印加し、温調素子3が2倍波変換部1と3倍波変換部2の温度を調整することにより、2倍波変換部1と3倍波変換部2を同時に位相整合させる。このため、周期的分極反転部の分極の方向がどちらを向いていても圧力による屈折率変化は等しいため、分極が変化する界面で反射は生ぜず、損失は生じない。   As described above, according to the wavelength conversion optical device of the first embodiment, the pressure application unit 4 applies pressure to the first periodic polarization inversion unit and the second periodic polarization inversion unit, and the temperature control element 3 doubles. By adjusting the temperatures of the wave conversion unit 1 and the third harmonic conversion unit 2, the second harmonic conversion unit 1 and the third harmonic conversion unit 2 are simultaneously phase-matched. For this reason, the refractive index changes due to pressure are the same regardless of which direction the polarization direction of the periodically poled portion turns, so no reflection occurs and no loss occurs at the interface where the polarization changes.

また、分極反転パターンは、2倍波変換部1と3倍波変換部2の各々の内部では平行な細線パターンであるため、大きなビーム径、長い作用長での効率低下を回避することができる。   In addition, since the polarization inversion pattern is a parallel thin line pattern in each of the second harmonic wave conversion unit 1 and the third harmonic wave conversion unit 2, it is possible to avoid the efficiency decrease at a large beam diameter and a long working length. .

次に、本発明の実施例2の波長変換光学装置を説明する。実施例1の波長変換光学装置では、|Δλ|<0.1nmの波長ばらつきに対処するためには、p≡p+Δp<0が必要な場合もある。この場合、結晶を圧力印加部4側に引っ張ることになるため、温調素子3と2倍波変換部1及び3倍波変換部2との界面、2倍波変換部1及び3倍波変換部2と圧力印加部4との界面の接着強度に配慮する必要がある。 Next, a wavelength conversion optical apparatus according to a second embodiment of the present invention will be described. In the wavelength conversion optical device according to the first embodiment, p≡p 0 + Δp <0 may be necessary in order to cope with the wavelength variation of | Δλ | <0.1 nm. In this case, since the crystal is pulled to the pressure application unit 4 side, the interface between the temperature adjustment element 3 and the second harmonic conversion unit 1 and the third harmonic conversion unit 2, the second harmonic conversion unit 1 and the third harmonic conversion It is necessary to consider the adhesive strength of the interface between the part 2 and the pressure application part 4.

これに対して、実施例2の波長変換光学装置は、波長λ=1550nm、温度T=35℃、圧力p=100MPa、Λ=20.87μm、Λ=7.09μmのときに位相整合するようにしておく。 On the other hand, the wavelength conversion optical device of Example 2 has a wavelength λ 0 = 1550 nm, a temperature T 0 = 35 ° C., a pressure p 0 = 100 MPa, Λ S = 20.87 μm, and Λ T = 7.09 μm. Make it phase-matched.

Δλ−ΔT−Δpの関係は、図4に示すものと同じであるので、実施例1の波長変換光学装置と同様にファイバレーザの典型的波長ばらつき|Δλ|<0.1nmに対して、|ΔT|<0.01K、|Δp|<100MPaで対応可能である。   Since the relationship of Δλ-ΔT-Δp is the same as that shown in FIG. 4, similar to the wavelength conversion optical device of the first embodiment, the typical wavelength variation of the fiber laser | Δλ | <0.1 nm, | It is possible to cope with ΔT | <0.01 K and | Δp | <100 MPa.

しかし、この範囲では、2倍波変換部1及び3倍波変換部2に印加される圧力p≡p+Δpは、正であるため、常に圧力印加部4側から結晶側に圧力が印加される。これにより、温調素子3と2倍波変換部1及び3倍波変換部2との界面、2倍波変換部1及び3倍波変換部2と圧力印加部4との界面の接着強度は問わない。 However, in this range, the pressure p≡p 0 + Δp applied to the second harmonic wave conversion unit 1 and the third harmonic wave conversion unit 2 is positive, so that pressure is always applied from the pressure application unit 4 side to the crystal side Ru. Thereby, the adhesion strength of the interface between the temperature adjustment element 3 and the second harmonic conversion unit 1 and the third harmonic conversion unit 2 and the interface between the second harmonic conversion unit 1 and the third harmonic conversion unit 2 and the pressure application unit 4 is It doesn't matter.

図5は、本発明の実施例3の波長変換光学装置の断面図である。図5に示す実施例3の波長変換光学装置は、図1に示す実施例1の波長変換光学装置に対して、3倍波変換部2に代えて、3倍波変換部2の位置に、4倍波変換部5を配置したことを特徴とする。   FIG. 5 is a cross-sectional view of a wavelength conversion optical apparatus according to a third embodiment of the present invention. The wavelength conversion optical device of the third embodiment shown in FIG. 5 is the same as the wavelength conversion optical device of the first embodiment shown in FIG. 1 except that the third harmonic conversion unit 2 is replaced with the third harmonic conversion unit 2. A fourth harmonic wave conversion unit 5 is disposed.

4倍波変換部5は、2倍波変換部1及び光の進行方向に直列に配置され第1分極反転周期よりも短い第3分極反転周期を持つ平行な分極反転パターンからなる第3の周期的分極反転部を有し2倍波変換部1からの2倍波に基づき4倍波を生成する。   The fourth harmonic conversion unit 5 includes a third period including a parallel polarization inversion pattern having a second polarization inversion pattern and a third polarization inversion period arranged in series in the traveling direction of light and having a third polarization inversion period shorter than the first polarization inversion period. It generates a fourth harmonic wave based on the second harmonic wave from the second harmonic wave conversion unit 1 having a target polarization inversion unit.

このような構成された実施例3の波長変換光学装置によれば、圧力印加部4が第1の周期的分極反転部と第3の周期的分極反転部に圧力を印加し、温調素子3が2倍波変換部1と4倍波変換部5の温度を調整することにより、2倍波変換部1と4倍波変換部5を同時に位相整合させる。   According to the wavelength conversion optical device of Example 3 configured as described above, the pressure application unit 4 applies pressure to the first periodic polarization inversion unit and the third periodic polarization inversion unit, and By adjusting the temperatures of the second harmonic wave conversion unit 1 and the fourth harmonic wave conversion unit 5, the second harmonic wave conversion unit 1 and the fourth harmonic wave conversion unit 5 are simultaneously phase-matched.

また、基本波の波長のばらつきに対して、温調素子3の温度と圧力印加部4の圧力とを変化させることにより2倍波変換部1及び4倍波変換部5を同時に位相整合させることができる。   In addition, the second harmonic conversion unit 1 and the fourth harmonic conversion unit 5 are simultaneously phase-matched by changing the temperature of the temperature control element 3 and the pressure of the pressure application unit 4 with respect to the dispersion of the fundamental wave wavelength. Can.

図6は、本発明の実施例4の波長変換光学装置を含むレーザ装置を示す図である。図6に示すレーザ装置は、半導体レーザを有するレーザ光源11、レンズ12a,12b、QPM素子10、レンズ13、光ファイバ14を備える。   FIG. 6 is a view showing a laser apparatus including a wavelength conversion optical apparatus according to a fourth embodiment of the present invention. The laser device shown in FIG. 6 includes a laser light source 11 having a semiconductor laser, lenses 12a and 12b, a QPM element 10, a lens 13, and an optical fiber 14.

レーザ光源11に有する半導体レーザは、レーザ光の基本波を発振して出力するもので、電流駆動によって注入された電子およびホールからなるキャリア注入によって励起され、注入された電子およびホールのキャリア対消滅の際に発生する誘導放出によって発生されたレーザ光を出力する。レンズ12a,12bは、レーザ光源11からのレーザ光の基本波をQPM素子10に導く。   The semiconductor laser included in the laser light source 11 oscillates and outputs the fundamental wave of laser light, and is excited by carrier injection consisting of electrons and holes injected by current drive, and carrier pair annihilation of injected electrons and holes is excited Output laser light generated by stimulated emission generated at the time of The lenses 12 a and 12 b guide the fundamental wave of the laser light from the laser light source 11 to the QPM element 10.

QPM素子10は、実施例1乃至実施例3の波長変換光学装置であり、レンズ12bからのレーザ光の基本波を入射して、基本波を高調波に変換してレンズ13に出射する。レンズ13は、QPM素子10で波長変換された高調波のレーザ光を光ファイバ14に導く。   The QPM element 10 is a wavelength conversion optical device according to any of the first to third embodiments, and receives the fundamental wave of the laser light from the lens 12b, converts the fundamental wave into a harmonic, and emits the harmonic to the lens 13. The lens 13 guides, to the optical fiber 14, the harmonic laser light whose wavelength has been converted by the QPM element 10.

このように実施例1乃至実施例3の波長変換光学装置であるQPM素子10をレーザ装置に適用することができるので、実施例4のレーザ装置においても、実施例1乃至実施例3の波長変換光学装置の効果を得ることができる。   Thus, since the QPM element 10 which is the wavelength conversion optical device of the first to third embodiments can be applied to a laser device, the wavelength conversion of the first to third embodiments is also performed in the laser device of the fourth embodiment. The effect of the optical device can be obtained.

本発明は、半導体レーザ装置に利用可能である。   The present invention is applicable to a semiconductor laser device.

1 2倍波変換部
1a,2a 分極反転パターン
2 3倍波変換部
3 温調素子
4 圧力印加部
5 4倍波変換部
11 レーザ光源
12a,12b レンズ
10 QPM素子
13 レンズ
14 光ファイバ
1 Double wave converter
DESCRIPTION OF SYMBOLS 1a, 2a Polarization inversion pattern 2 3rd harmonic wave conversion part 3 temperature control element 4 pressure application part 5 4th harmonic wave conversion part 11 laser light source 12a, 12b lens 10 QPM element 13 lens 14 optical fiber

Claims (4)

第1分極反転周期を持つ平行な分極反転パターンからなる第1の周期的分極反転部を有し基本波を2倍波に変換する2倍波変換部と、前記2倍波変換部及び光の進行方向に直列に配置され前記第1分極反転周期よりも短い第2分極反転周期を持つ平行な分極反転パターンからなる第2の周期的分極反転部を有し前記基本波と前記2倍波とに基づき3倍波を生成する3倍波変換部とを備える疑似位相整合素子と、
前記疑似位相整合素子の一方の面に配置され、直列に配置された前記2倍波変換部及び前記3倍波変換部の温度を調整する温度調整素子と、
前記疑似位相整合素子の他方の面に配置され、直列に配置された前記2倍波変換部及び前記3倍波変換部に圧力を印加する圧力印加部を備え、
前記温度調整素子の温度と前記圧力印加部の圧力とを変化させることにより前記2倍波変換部及び前記3倍波変換部を同時に位相整合させることを特徴とする波長変換光学装置。
A second harmonic conversion unit having a first periodical polarization inversion unit formed of parallel polarization inversion patterns having a first polarization inversion period, and converting a fundamental wave into a second harmonic; The fundamental wave and the second harmonic are provided with a second periodical polarization inversion portion formed of parallel polarization inversion patterns arranged in series in the traveling direction and having a second polarization inversion period shorter than the first polarization inversion period. And a quasi phase matching element including a third harmonic conversion unit that generates a third harmonic based on
A temperature control element for adjusting the temperature of the second harmonic conversion unit and the third harmonic conversion unit disposed on one side of the quasi phase matching device and disposed in series;
And a pressure application unit that applies a pressure to the second harmonic conversion unit and the third harmonic conversion unit that are disposed on the other surface of the quasi phase matching element and are disposed in series.
A wavelength conversion optical device characterized in that the second harmonic conversion unit and the third harmonic conversion unit are simultaneously phase-matched by changing the temperature of the temperature adjustment element and the pressure of the pressure application unit.
第1分極反転周期を持つ平行な分極反転パターンからなる第1の周期的分極反転部を有し基本波を2倍波に変換する2倍波変換部と、前記2倍波変換部及び光の進行方向に直列に配置され前記第1分極反転周期よりも短い第3分極反転周期を持つ平行な分極反転パターンからなる第3の周期的分極反転部を有し前記2倍波とに基づき4倍波を生成する4倍波変換部とを備える疑似位相整合素子と、
前記疑似位相整合素子の一方の面に配置され、直列に配置された前記2倍波変換部及び前記4倍波変換部の温度を調整する温度調整素子と、
前記疑似位相整合素子の他方の面に配置され、直列に配置された前記2倍波変換部及び前記4倍波変換部に圧力を印加する圧力印加部を備え、
前記温度調整素子の温度と前記圧力印加部の圧力とを変化させることにより前記2倍波変換部及び前記4倍波変換部を同時に位相整合させることを特徴とする波長変換光学装置。
A second harmonic conversion unit having a first periodical polarization inversion unit formed of parallel polarization inversion patterns having a first polarization inversion period, and converting a fundamental wave into a second harmonic; 4 times based on the second harmonic, having a third periodical polarization inversion portion consisting of parallel polarization inversion patterns arranged in series in the traveling direction and having a third polarization inversion period shorter than the first polarization inversion period A quasi phase matching element including a fourth harmonic wave conversion unit that generates a wave;
A temperature control element for adjusting the temperature of the second harmonic conversion unit and the fourth harmonic conversion unit disposed on one side of the quasi phase matching element and disposed in series;
And a pressure application unit that applies a pressure to the second harmonic conversion unit and the fourth harmonic conversion unit that are disposed on the other surface of the pseudo phase matching element and are disposed in series.
A wavelength conversion optical device characterized in that the second harmonic conversion unit and the fourth harmonic conversion unit are simultaneously phase-matched by changing the temperature of the temperature adjustment element and the pressure of the pressure application unit.
前記疑似位相整合素子は、MgSLT又はMgLNからなることを特徴とする請求項1又は請求項2記載の導波路型の波長変換光学装置。   3. The waveguide type wavelength conversion optical device according to claim 1, wherein the quasi phase matching element is made of MgSLT or MgLN. 前記基本波を発振する半導体レーザと、
前記半導体レーザからの前記基本波を入射する請求項1乃至3のいずれか1項の波長変換光学装置と、
を備えることを特徴とするレーザ装置。
A semiconductor laser for oscillating the fundamental wave;
The wavelength conversion optical device according to any one of claims 1 to 3, wherein the fundamental wave from the semiconductor laser is incident thereon;
A laser apparatus comprising:
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