JP6516030B2 - Pattern formation method - Google Patents

Description

  The present invention relates to a pattern forming method for forming a pattern of an electronic device on a sheet substrate.

  In recent years, display displays using a printing method such as intaglio printing, letterpress printing, silk printing, or inkjet printing on a flexible (flexible) substrate made of resin or ultrathin glass, which is called printable electronic. It has been attempted to form electronic devices such as As the electronic device, it is necessary to use not only the printing method but also the optical patterning device because high pattern drawing resolution and high positioning accuracy are required especially for the formation of circuit pattern including thin film transistor (TFT). It is done.

  In Patent Document 1 shown below, a cylindrical mask is rotated while a long flexible sheet substrate is conveyed in a long direction, and a pattern for an electronic device is scanned and exposed on a predetermined region of the sheet substrate. Exposure apparatus (light patterning apparatus) for exposing with

  Further, in an apparatus for processing and processing a long flexible sheet substrate continuously while conveying it, as in Patent Document 2 shown below, an EPC (edge position controller) is provided in the sheet substrate conveyance path. There is provided a mechanism for adjusting the position of the sheet substrate in the width direction (direction orthogonal to the transport direction), which is called. In the EPC mechanism of Patent Document 2, the position of the edge of the sheet substrate is detected in the conveyance path of the sheet substrate sent by the plurality of rotating rollers, and if the edge position deviates from the reference position, it is corrected It is disclosed to shift the rotating roller on which the sheet substrate is wound in the direction of the rotation axis.

  Further, according to Patent Document 3 shown below, an EPC which applies ultrasonic vibration to a part of the rotational axis direction of a rotating roller around which a sheet substrate is wound, and minutely displaces the sheet substrate in the width direction on the outer peripheral surface of the rotating roller. A mechanism is disclosed.

  For example, in the case of forming a pattern of an electronic device using the exposure apparatus of Patent Document 1, the accuracy of the formation position of the pattern is determined according to the fineness (minimum line width) of the pattern to be exposed. For example, in the case of forming a line pattern of a certain line width on a sheet substrate, the positional deviation of the line pattern to be formed is at least about 1⁄5 of the line width from the relationship with the base layer or upper layer of the laminated structure. You need to fit inside. For example, in the case of an electronic device including a line pattern having a line width of about 6 μm, the positional deviation of the line pattern to be formed needs to be within about ± 1 μm, preferably about ± 0.5 μm.

  In order to form a line pattern with such high accuracy, a plurality of alignment marks are provided in advance on the sheet substrate along the longitudinal direction at predetermined intervals, and for example, in the exposure apparatus, alignment on the sheet substrate An alignment microscope, which is a photoelectric mark detection system for detecting marks, is provided. The detection area (detection field of view) on the sheet substrate of the alignment microscope is set to a size of about 100 to 500 μm, although it varies depending on the size of the alignment mark to be detected and the measurement resolution of the mark position. Therefore, in order to capture the alignment mark in the detection area of such a size while feeding the sheet substrate in the longitudinal direction, positioning in the width direction of the sheet substrate is performed with an accuracy equal to or less than the size of the detection area of the alignment microscope. Precise and smooth operation is required of the EPC mechanism.

  However, in the EPC mechanism of Patent Document 2, since the positioning (position adjustment) of the sheet substrate in the width direction is performed by mechanically shifting the rotating roller in the rotational axis direction, as described above, the minute detection of the alignment microscope is performed. Position adjustment can not be performed with an accuracy less than the size of the area. Although it is possible to use a rotating roller using ultrasonic vibration as described in Patent Document 3 for positioning (position adjustment) of such a precise and smooth sheet substrate, the back surface of the sheet substrate is a rotating roller. Since vibration is applied to the sheet substrate in a state in which the sheet substrate is in contact with the outer peripheral surface under a constant pressure, fine scratches may occur on the back surface of the resin sheet substrate or dust may be generated.

JP, 2011-203311, A JP, 2005-008410, A JP, 2013-180863, A

An aspect of the present invention is a pattern forming method for forming a pattern for an electronic device by a patterning device on a surface of a sheet substrate while conveying a long flexible sheet substrate in a longitudinal direction, Measuring the position error in the width direction intersecting the longitudinal direction of the sheet substrate or the inclination error in the transport direction of the sheet substrate before being carried into the sheet substrate, and the sheet substrate upstream of the patterning device Using a transport device including a pair of guide rollers disposed at two separate locations on the transport path of the sheet to bend the transport path of the sheet substrate by frictional contact in a state where a predetermined tension is applied in the longitudinal direction; distribution in the width direction of the magnitude of the tension acting on the sheet substrate between the pair of guide rollers, on the basis of the measured positional error or tilt error As it adjusted during the conveyance of the sheet substrate, the temperature adjustment unit provided in a non-contact state with the sheet substrate between the pair of guide rollers, giving a temperature distribution with respect to the width direction of the sheet substrate And adjusting.

FIG. 1 is a diagram showing a schematic configuration of a device manufacturing system including an exposure apparatus that performs exposure processing on a substrate according to a first embodiment. It is a figure which shows the scanning line of the spot light scanned on a board | substrate by the exposure head of FIG. 1, and the alignment mark formed on the board | substrate. It is a figure which shows the structure of the scanning unit of FIG. It is a figure which shows the structure of the tension distribution adjustment part of FIG. It is a figure which shows an example of distribution of the width direction of the tension | tensile_strength applied to a board | substrate when changing the temperature of a board | substrate with respect to the width direction of a board | substrate using the temperature control part of FIG. It is a figure which shows the other example of distribution of the width direction of the tension | tensile_strength given to a board | substrate when changing the temperature of a board | substrate with respect to the width direction of a board | substrate using the temperature control part of FIG. It is a figure explaining adjustment of the position in the width direction of a substrate by a tension distribution adjustment part. It is a figure which shows the structure of the tension distribution adjustment part in the modification 1 of 1st Embodiment. It is a side view of the temperature control part in modification 2 of a 1st embodiment. It is a top view of the temperature control part of FIG. FIG. 17 is a diagram showing a configuration added to the edge position controller in the fourth modification of the first embodiment. It is a figure which shows the structure of the tension distribution adjustment part of 2nd Embodiment. It is a figure for demonstrating the increase in the tension | tensile_strength by external-force provision of the external-force provision part of FIG. It is a figure which shows the structure of the tension distribution adjustment part in the modification 1 of 2nd Embodiment. It is a flowchart which shows the manufacturing process of a thin-film transistor layer.

  The pattern forming method according to the aspect of the present invention will be described in detail below with reference to preferred embodiments and with reference to the attached drawings. In addition, the aspect of this invention is not limited to these embodiment, What added various change or improvement is also included.

First Embodiment
FIG. 1 is a view showing a schematic configuration of a device manufacturing system 10 including an exposure apparatus EX that performs exposure processing on a substrate (irradiated object, object to be exposed) P according to the first embodiment. In the following description, an XYZ orthogonal coordinate system is set, and the X direction, the Y direction, and the Z direction will be described according to the arrows shown in the figure.

  The device manufacturing system 10 is, for example, a system for manufacturing a flexible display as a device. As a flexible display, for example, there is an organic EL display or the like. In the device manufacturing system 10, the substrate P is delivered from a supply roll (not shown) in which a flexible sheet substrate (simply referred to as a substrate) P is wound in a roll, and various processes are continuously applied to the delivered substrate P. After that, it has a so-called roll-to-roll (roll to roll) structure in which the substrate P after various treatments is taken up by a recovery roll (not shown). The substrate P has a strip shape in which the moving direction (conveyance direction) of the substrate P is the longitudinal direction (long) and the width direction is the short direction (short). The substrate P after various treatments is in a state in which a plurality of devices are connected, and is a substrate for multiple chamfers. The substrate P sent from the supply roll is sequentially subjected to various processes by the process device PR1, the exposure device EX, the process device PR2, and the like, and is taken up by the collection roll.

  The X direction is a direction (transport direction) from the process apparatus PR1 to the process apparatus PR2 through the exposure apparatus EX in the horizontal plane. The Y direction is a direction orthogonal to the X direction in the horizontal plane, and is the width direction of the substrate P. The Z direction is a direction (upward direction) orthogonal to the X direction and the Y direction.

  As the substrate P, for example, a resin film, a foil made of metal or alloy such as stainless steel, or the like is used. The material of the resin film includes, for example, polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, polystyrene resin, and vinyl acetate resin Among them, one including at least one or more of them may be used. The thickness and rigidity (Young's modulus) of the substrate P may be in such a range that the substrate P does not produce a fold or irreversible wrinkles due to buckling when passing through the transport path of the exposure apparatus EX. As a base material of the substrate P, a film of PET (polyethylene terephthalate) or PEN (polyethylene naphthalate) having a thickness of about 25 μm to 200 μm is a typical sheet substrate.

  Since the substrate P may receive heat in each process performed by the process apparatus PR1, the exposure apparatus EX, the process apparatus PR2, etc., it is preferable to select a substrate P of a material whose thermal expansion coefficient is not significantly large. . For example, the thermal expansion coefficient can be suppressed by mixing the inorganic filler into the resin film. The inorganic filler may be, for example, titanium oxide, zinc oxide, alumina, or silicon oxide. In addition, the substrate P may be a single layer of ultrathin glass with a thickness of about 100 μm manufactured by the float method or the like, or a laminate in which the above-mentioned resin film, foil or the like is bonded It may be

  The processing apparatus PR1 performs the processing of the previous step on the substrate P to be exposed by the exposure apparatus EX. The processing apparatus PR1 sends the substrate P subjected to the processing of the previous step toward the exposure apparatus EX. By the processing of this pre-process, the substrate P to be sent to the exposure apparatus EX is a substrate (photosensitive substrate) P having a photosensitive functional layer (photosensitive surface) formed on its surface.

  The photosensitive functional layer is applied as a solution on the substrate P and dried to form a layer (film). A typical photosensitive functional layer is a photoresist, but a photosensitive silane coupling agent (SAM) in which the lyophobic property of the portion irradiated with ultraviolet light is modified as a material that does not require development processing Or, there is a photosensitive reducing agent or the like in which the plating reducing group is exposed to the portion irradiated with the ultraviolet light. When a photosensitive silane coupling agent is used as the photosensitive functional layer, the pattern portion exposed to ultraviolet light on the substrate P is reformed from lyophobic to lyophilic. Therefore, a pattern layer is formed by selectively applying a conductive ink (ink containing conductive nanoparticles such as silver or copper), a liquid containing a semiconductor material, or the like on the lyophilic portion. be able to.

  When a photosensitive reducing agent is used as the photosensitive functional layer, the plating reducing group is exposed on the pattern portion exposed to ultraviolet light on the substrate P. Therefore, after exposure, the substrate P is immediately immersed in a plating solution containing palladium ions or the like for a certain period of time, whereby a pattern layer of palladium is formed (deposited). Such a plating process is an additive process, but in addition, assuming that the etching process is a subtractive process, the substrate P sent to the exposure apparatus EX is made of PET or the base material. It may be PEN, on the surface of which a metal thin film such as aluminum (Al) or copper (Cu) may be deposited entirely or selectively, and further a photoresist layer may be laminated thereon.

  In the case of the present embodiment, the exposure apparatus EX as a pattern drawing apparatus is a direct drawing type exposure apparatus that does not use a mask, that is, a so-called raster scan type exposure apparatus EX for the substrate P supplied from the process apparatus PR1. Then, a predetermined pattern such as a circuit or wiring for display is exposed. The exposure apparatus EX scans the spot light of the laser light LB for exposure in the predetermined scanning direction (Y direction) on the substrate P while conveying the substrate P in the X direction, and the intensity of the spot light is pattern data ( A pattern is drawn and exposed on the surface (photosensitive surface) of the substrate P by modulating (on / off) at high speed according to the drawing data).

  The process apparatus PR2 performs post-process processing (for example, plating processing, development / etching processing, and the like) on the substrate P exposed by the exposure apparatus EX. The pattern layer of the device is formed on the substrate P by the process of this post-process.

  The exposure apparatus EX includes a transport device 12, a light source device 14, an exposure head (drawing head) 16, and a control unit 18. The exposure apparatus EX is stored in the temperature control chamber ECV. By keeping the temperature control chamber ECV at a predetermined temperature, a shape change due to the temperature of the substrate P conveyed inside is suppressed. The temperature control chamber ECV is disposed on the installation surface Ea of the manufacturing plant via the passive or active vibration isolation units SU1 and SU2. The vibration isolation units SU1 and SU2 reduce vibrations from the installation surface Ea. The installation surface Ea may be a surface on the installation base or a floor.

  The transfer device 12 transfers the substrate P transferred from the process device PR1 to the process device PR2 at a predetermined speed. The conveyance device 12 sequentially drives the edge position controller EPC, the tension adjustment roller RT1, the rotating drum (cylindrical drum) 20, the tension adjustment roller RT2, and the drive sequentially from the upstream side (−X direction side) along the conveyance direction of the substrate P. It has rollers R1 and R2.

  The edge position controller EPC transports the substrate P to the rotary drum 20 while adjusting the position in the width direction (the Y direction and the short direction of the substrate P) of the substrate P transported from the process device PR1. The edge position controller EPC desirably adjusts the position of the substrate P in the width direction such that the lengthwise direction of the substrate P carried into the rotating drum 20 is orthogonal to the axial direction of the rotation axis AX of the rotating drum 20. . The edge position controller EPC will be described in detail later. The rotating drum 20 supports the portion of the substrate P on which the predetermined pattern is to be exposed by its circumferential surface. The rotating drum 20 rotates around the rotation axis AX extending in the Y direction, and thereby conveys the substrate P in the X direction following the outer peripheral surface (circumferential surface) of the rotating drum 20. A rotational torque from a rotational drive source (for example, a motor, a speed reduction mechanism, etc.) (not shown) is applied to the rotational axis AX. The rotational drive source is controlled by the control unit 18.

  The driving rollers R1 and R2 are disposed at predetermined intervals along the transport direction of the substrate P, and give the substrate P after exposure a predetermined slack. The driving rollers R1 and R2 rotate while holding the front and back sides of the substrate P, and transport the substrate P toward the processing apparatus PR2. The drive rollers R1 and R2 are provided on the downstream side (+ X direction side) in the transport direction with respect to the rotary drum 20, and the drive roller R1 is upstream (-X in the transport direction) with respect to the drive roller R2. Provided on the direction side). The tension adjustment rollers RT1 and RT2 apply a predetermined tension to the substrate P supported by being wound around the rotary drum 20. The driving rollers R1 and R2 are provided with rotational torque from a rotational driving source (for example, a motor, a reduction mechanism, etc.) not shown. The rotational drive source is controlled by the control unit 18.

  The light source device 14 has a laser light source and emits laser light (irradiation light, exposure beam) LB used for exposure. The laser beam LB may be ultraviolet light having a peak wavelength in a wavelength band of 370 mm or less. The laser light LB may be pulsed light emitted at the oscillation frequency Fs. The laser beam LB emitted from the light source device 14 is incident on the exposure head 16.

  The exposure head 16 includes a plurality of scanning units U (U1 to U5) on which the laser light LB from the light source device 14 is incident. The exposure head 16 exposes (draws) a predetermined pattern on a part of the substrate P which is transported by the transport device 12 and supported by the circumferential surface of the rotating drum 20 by a plurality of scanning units (drawing units) U. . The exposure head 16 is a so-called multi-beam exposure head 16 by including a plurality of scanning units U having the same configuration. The scanning units U1, U3 and U5 are disposed on the upstream side (-X direction side) of the transport direction of the substrate P with respect to the rotation axis AX of the rotating drum 20. The scanning units U2 and U4 are rotation axes of the rotating drum 20 It is disposed on the downstream side (+ X direction side) of the transport direction of the substrate P with respect to AX.

  The scanning unit U converges the incident laser light on the substrate P to make it a spot light, and the spot light is a scanning line (scanning direction (Y direction)) extended using a light scanning member such as a polygon mirror (Y direction) Scan along the drawing line) The scanning lines L of the respective scanning units U are set to be joined together without being separated from each other in the Y direction (the width direction of the substrate P) as shown in FIG. In FIG. 2, the scan line L of the scan unit U1 is represented by L1, and the scan line L of the scan unit U2 is represented by the scan line L2. Similarly, the scan lines L of the scan units U3, U4, U5 are represented by scan lines L3, L4, L5. As described above, each scan unit U shares a scan area so that all the scan units U1 to U5 cover the entire exposure region W in the width direction. Since the drawing width (length of the scanning line L) in the Y direction by one scanning unit U is, for example, about 20 to 50 mm, three odd-numbered scanning units U1, U3, and U5, and an even number By arranging a total of five scan units U of two scan units U2 and U4 in the Y direction, the width in the drawable Y direction is expanded to about 100 to 250 mm.

  Further, each scanning unit U modulates (on / off) the intensity of the spot light to be irradiated onto the substrate P at high speed in accordance with the drawing data corresponding to the predetermined pattern. Thereby, a predetermined pattern can be exposed (drawn) in the exposure region W on the substrate P. The modulation of the spot light is, for example, an acoustooptic element (AOM: Acousto-Optic) that changes the optical path of the laser beam LB, that is, the traveling direction by diffracting the incident laser beam LB by using an ultrasonic wave (high frequency signal). It can be realized by using a modulator). Specifically, each scanning unit U has the acousto-optic element, and irradiates the substrate P with the laser light LB which is incident when the on-drive signal (high frequency signal) is input to the acousto-optic element from the control unit 18 Do. On the other hand, each scanning unit U does not irradiate the substrate P with the incident laser light LB when a drive signal (high frequency signal) of off is input to the acousto-optic element from the control unit 18. The scanning unit U is a known technique as disclosed in WO 2013/146184 (see FIG. 36). Here, the scanning unit U will be briefly described with reference to FIG.

  FIG. 3 shows the configuration of the scan unit U2, but since each scan unit U (U1 to U5) has the same configuration, only the scan unit U2 will be described, and the other scan units U will be described. I omit explanation. As shown in FIG. 3, the scanning unit U2 includes, for example, a condenser lens 30, a drawing optical element (light modulation element) 32, a collimator lens 34, a reflection mirror 36, a cylindrical lens 38, a focus lens 40, a reflection mirror 42, A polygon mirror (light scanning member) 44, a reflection mirror 46, an f-θ lens 48, a cylindrical lens 50, and an absorber 52 are provided.

  The laser beam LB incident on the scanning unit U2 proceeds downward from above in the vertical direction (−Z direction), and is incident on the image drawing optical element 32 through the condenser lens 30. The condensing lens 30 condenses (converges) the laser beam LB incident on the drawing optical element 32 so as to have a beam waist in the drawing optical element 32. The drawing optical element 32 has transparency to the laser light LB, and for example, an acousto-optic element (AOM: Acousto-Optic Modulator) is used.

  When the drive signal (high frequency signal) from the control unit 18 is off, the drawing optical element 32 transmits the incident laser light LB to the absorber 52 side, and the drive signal from the control unit 18 (high frequency signal (high frequency signal) When the) is in the on state, the incident laser beam LB is diffracted to be directed to the reflecting mirror. The absorber 52 is an optical trap that absorbs the laser light LB in order to suppress the leakage of the laser light LB to the outside.

  As described above, the laser light LB is transmitted to the reflection mirror 36 by rapidly turning on / off the drawing drive signal (the frequency of the ultrasonic wave) to be applied to the drawing optical element 32 according to the pattern data (black and white). Whether to go to the absorber 52 is switched. This means that when viewed on the substrate P, the intensity of the laser beam LB (spot beam SP) reaching the photosensitive surface is high speed to either high level or low level (for example, zero level) according to the pattern data. Means to be modulated.

  The collimating lens 34 collimates the laser light LB traveling from the drawing optical element 32 to the reflection mirror 36. The reflection mirror 36 reflects the incident laser light LB in the −X direction, and irradiates the reflection mirror 42 via the cylindrical lens 38 and the focus lens 40. The reflection mirror 42 irradiates the incident laser light LB onto the polygon mirror 44. The polygon mirror (rotational polygon mirror) 44 rotates and continuously changes the reflection angle of the laser beam LB to scan the position of the laser beam LB irradiated on the substrate P in the scanning direction (width direction of the substrate P). Scan to The polygon mirror 44 is rotated at a constant speed by a rotational drive source (for example, a motor, a speed reduction mechanism, etc.) not shown. The rotational drive source is controlled by the control unit 18.

  The cylindrical lens 38 provided between the reflection mirror 36 and the reflection mirror 42 cooperates with the focus lens 40 to make the laser beam LB of the polygon mirror 44 with respect to the non-scanning direction (Z direction) orthogonal to the scanning direction. Focus (converge) on the reflective surface. Even when the reflecting surface is inclined with respect to the Z direction (the inclination from the parallel state of the normal line of the XY plane and the reflecting surface), the cylindrical lens 38 can suppress the influence thereof. Further, it is possible to suppress the displacement of the irradiation position of the laser beam LB irradiated onto the substrate P in the X direction.

  The laser beam LB reflected by the polygon mirror 44 is reflected by the reflection mirror 46 in the −Z direction, and enters the f-θ lens 48 having the optical axis AXu parallel to the Z axis. The f-θ lens 48 makes it possible to scan the laser beam LB accurately in the Y direction at a constant velocity. The laser beam LB emitted from the f-θ lens 48 becomes a substantially circular minute spot light SP with a diameter of several μm on the substrate P through the cylindrical lens 50 whose generatrix is parallel to the Y direction. It is irradiated. The spot light (spot, scanning spot, scanning spot light) SP is scanned one-dimensionally in one direction along the scanning line L extending in the Y direction by the polygon mirror 44.

  The control unit 18 controls each unit of the exposure apparatus EX to cause each unit to execute processing. The control unit 18 includes a computer and a storage medium storing a program, and the computer executes the program stored in the storage medium to function as the control unit 18 of the first embodiment. .

  Further, as shown in FIG. 2, the exposure apparatus EX is provided with three alignment microscopes AM (AM1 to AM3) for detecting alignment marks Ks (Ks1 to Ks3) formed on the substrate P. The alignment mark Ks is a reference mark for relatively aligning (aligning) the substrate P with a predetermined pattern drawn in the exposure region W on the substrate P. The alignment marks Ks are formed on both ends in the width direction of the substrate P at regular intervals along the longitudinal direction (longitudinal direction) of the substrate P, and between the exposure region W and the exposure region W, and , And the center of the substrate P in the width direction.

  The alignment microscope AM is provided on the upstream side (−X direction side) in the transport direction of the substrate P with respect to the scanning lines L1 to L5 formed by the exposure head 16. The alignment microscopes AM1 to AM3 are provided along the Y direction, and the alignment microscope AM1 detects the alignment mark Ks1 formed at the end on the + Y direction side of the substrate P, and the alignment microscope AM2 detects the alignment of the substrate P. The alignment mark Ks2 formed at the end on the -Y direction side is detected, and the alignment microscope AM3 detects the alignment mark Ks3 formed at the center in the width direction of the substrate P. The alignment microscope AM projects illumination light onto the substrate P, captures an image of the reflected light with an imaging device such as a CCD, a CMOS or the like, and detects an alignment mark Ks. The position information of the detected alignment mark Ks is sent to the control unit 18. Note that the illumination light for alignment is light in a wavelength range that has little sensitivity to the photosensitive functional layer on the substrate P, for example, light with a wavelength of about 500 to 800 nm.

  The configuration of the edge position controller EPC will be described with reference to FIGS. 1 and 4. The edge position controller EPC includes drive rollers DR1 and DR2, guide rollers GR1 and GR2 as a pair of guide members, and a tension distribution adjustment unit 60. The rotation axes of the drive rollers DR1 and DR2 and the rotation axes of the pair of guide rollers GR1 and GR2 are provided parallel to the rotation axis AX of the rotation drum 20, and the guide roller GR1 and the guide roller GR2 The diameters of are identical to one another. The drive roller DR1 is provided on the upstream side (−X direction side) of the transport direction of the substrate P with respect to the drive roller DR2, and the drive rollers DR1 and DR2 are for the substrate P sent to the edge position controller EPC. The substrate P is conveyed toward the rotating drum 20 by rotating while holding the front and back sides.

  The pair of guide rollers GR1 and GR2 transports the substrate P between the drive roller DR1 and the drive roller DR2 in order to apply a predetermined tension to the substrate P in the longitudinal direction (transport direction) of the substrate P. It is what bends the path. Therefore, the guide roller GR1 is provided above the drive roller DR1 (in the + Z direction), and the guide roller GR2 is provided above the drive roller DR2 (in the + Z direction). The substrate P conveyed from the drive roller DR1 is bent upward (in the + Z direction) by the guide roller GR1 and guided to the guide roller GR2, and the substrate P conveyed from the guide roller GR1 by the guide roller GR2 is downward (in the −Z direction). ) And is guided to the drive roller DR2. Therefore, a predetermined tension is applied between the pair of guide rollers GR1 and GR2.

  The tension distribution adjusting unit 60 adjusts the distribution in the width direction (Y direction) of the tension applied to the substrate P in a non-contact state with the substrate P or in a low friction state. The tension distribution adjusting unit 60 includes temperature adjusting units 62 and 64 that change the temperature of the substrate P in the width direction of the substrate P. The temperature control units 62 and 64 are provided along the transport direction of the substrate P, and the temperature control unit 62 is provided on the upstream side (−X direction side) of the temperature control unit 64 in the transport direction of the substrate P. It is done. The temperature control units 62 and 64 have a plurality of heating elements 66 disposed along the width direction of the substrate P, and the temperature control units 62 and 64 control the amount of heat generation of each heating element 66. The heat generating body 66 generates heat to apply a temperature to the substrate P (to warm the substrate P). The temperature control units 62 and 64 can individually control the amount of heat generation of each heating element 66. The heat generating body 66 includes, for example, a resistance, and the amount of heat generated by the heat generating body 66 can be controlled by controlling the amount of current supplied to the resistance by the temperature control units 62 and 64. The temperature adjusters 62 and 64 can adjust the temperature of the substrate P in a region facing the heat generator 66 in a non-contact state with the substrate P by the heat generator 66. The heating element 66 may have a substantially plate-like shape.

  The plurality of heating elements 66 of the temperature adjustment unit 62 are arranged at predetermined intervals so as to cover the entire width of the substrate P, and the plurality of heating elements 66 of the temperature adjustment unit 64 cover the entire width of the substrate P As such, they are arranged at predetermined intervals. The number of heating elements 66 disposed along the width direction of the substrate P of the temperature adjustment unit 62 is larger than the number of heating elements 66 disposed along the width direction of the substrate P of the temperature adjustment unit 64. That is, the temperature adjustment unit 62 can adjust the temperature of the substrate P in the width direction of the substrate P more finely than the temperature adjustment unit 64. The length in the Y direction of each heating element 66 of the temperature adjustment unit 62 is the same, and the length in the Y direction of each heating element 66 of the temperature adjustment unit 64 is the same. Further, the length in the Y direction of the heat generating body 66 of the temperature adjusting unit 62 is set shorter than the length in the Y direction of the heat generating body 66 of the temperature adjusting unit 64. The lengths in the Y direction of the heat generating members 66 of the temperature adjusting unit 62 may not be the same, and the lengths in the Y direction of the heat generating members 66 of the temperature adjusting unit 64 may not be the same.

  In the first embodiment, the temperature control unit 62 includes seven heating elements 66 along the width direction of the substrate P, and two temperature control units 64 along the width direction of the substrate P. The heating element 66 of Therefore, the temperature adjustment unit 62 can control the temperature of the substrate P in each of seven regions in the width direction of the substrate P, and the temperature adjustment unit 64 sets the temperature of the substrate P in the width direction of the substrate P to two. Each area can be controlled individually. Although the temperature control units 62 and 64 are disposed below the substrate P (−Z direction side) so as to warm the substrate P from the back surface side, the temperature adjustment units 62 and 64 are of the substrate P so as to warm the substrate P from the front surface side. It may be arranged on the upper side (+ Z direction side). In addition, one of the temperature control units 62 and 64 may be disposed above the substrate P, and the other may be disposed below.

  The substrate P expands as the temperature rises, so the tension applied decreases as the temperature increases. Therefore, by applying temperature to the substrate P so as to change the temperature distribution in the width direction of the substrate P by the temperature adjustment units 62 and 64, distribution in the width direction (Y direction) of tension applied to the substrate P Can be adjusted.

  The temperature to be applied to the substrate P by the temperature control units 62 and 64 is preferably equal to or less than the glass transition temperature of the substrate P, and for example, when the main body of the substrate P is PET (polyethylene terephthalate), the high temperature side is less than 120 ° C. Preferably, the temperature is 100 ° C. or less. When the temperature applied to the substrate P is lowered with respect to the environmental temperature (ambient temperature of the substrate P) where the apparatus is installed, the temperature is extremely reduced and the atmosphere is prevented so as not to cause condensation on the surface of the substrate P It is good to prepare an environmental control device (chamber etc.) to reduce the humidity of the

  FIG. 5 is a view showing an example of the distribution in the width direction of the tension T applied to the substrate P when the temperature of the substrate P is changed in the width direction of the substrate P using the temperature adjustment unit 62. The black dots (dots) attached to the substrate P in FIG. 5 indicate the temperature of the substrate P, and indicate that the temperature of the substrate P is higher as the area with more black dots. Therefore, in the example illustrated in FIG. 5, the temperature adjustment unit 62 controls the amount of heat generation of the plurality of heating elements 66 such that the temperature of the substrate P increases toward the + Y direction side of the substrate P. That is, the temperature control unit 62 minimizes the amount of heat generation of the heating element 66 located closest to the -Y direction side among the plurality of heating elements 66 (including 0), and the heating element 66 located closest to the + Y direction side. The heat generation amount of the heat generating body 66 is gradually increased as the heat generation amount of the heating element 66 is maximized and the heat generation amount of the heat generating body 66 is gradually increased from the −Y direction side to the + Y direction side. I'm sorry.

  Accordingly, as the substrate P moves from the −Y direction side to the + Y direction side, the tension T applied decreases. In this case, the tension T1 of the region facing the heat generating member 66 located closest to the − direction side of the substrate P is the highest, and the tension T2 of the region facing the heat generating device 66 located the most toward the + direction is lowest. Become. The temperature difference (in the + Y direction side and the −Y direction side) in the width direction of the substrate P generates a bending moment M as shown in FIG. 5 in the substrate P, whereby the substrate P in the width direction I bend and shift. Since the substrate P is bent in the direction in which the applied tension T is larger, the transport direction is bent in the direction in which the tension T is larger (in the example of FIG. 5, the −Y direction side), and the position in the width direction of the substrate P is − Shift to the Y direction side. The greater the temperature difference, the greater the change in tension applied to the substrate P in the width direction (the action), and the greater the bending moment M. Therefore, the amount of movement of the substrate P in the width direction shifts in the Y direction Will also grow.

Here, a change in tension T per unit width (hereinafter referred to as a tension change ΔT) will be described based on a temperature change Δt per unit width. Assuming that the thermal expansion coefficient of the substrate P is Tα and the longitudinal elastic coefficient is E, the change in tension ΔT can be approximately expressed by equation (1).
ΔT ≒ −E × Tα × L ′ / L × Δt (1)

  Here, L ′ in the equation (1) represents the length in the longitudinal direction (temperature-adjusted length) in which the temperature change occurs along the width direction of the substrate P, and L is given a tension T Represents the length of the substrate P in the longitudinal direction. That is, L represents the length of the substrate P from the guide roller GR1 to the guide roller GR2. In the equation (1), the original tension T acting on the substrate P is not included. This means that if the substrate P is extended in the longitudinal direction by a fixed amount (ΔLto) over the length L due to the tension T that originally acts, a part (length L of the length L of the substrate P This is because the amount of extension changes from ΔLto due to deformation (strain) of the substrate P by changing the temperature of '). For example, when the amount of extension under initial tension is a constant amount ΔLto, the amount of expansion and contraction due to temperature change (temperature-dependent deformation amount) is ΔLtt, and the overall extension amount is ΔLto + ΔLtt, or ΔLto− It becomes ΔLtt. From this, the change in the amount of extension of the substrate P depending on the temperature change Δt, that is, the rate of change in the temperature dependence of the shape (strain) represented by the thermal expansion coefficient Tα and the longitudinal elastic coefficient E corresponds to the tension change ΔT. It will be. This is specifically described below.

  Assuming that the stress per unit area is σ, and the amount of strain (amount of deformation) is ε, the modulus of longitudinal elasticity E is represented by E = σ / ε, and the tension T (σ =) at which the stress σ per unit area is given to the substrate P T). Therefore, the length when the substrate P is in no tension state between the guide roller GR1 and the guide roller GR2 is Lo, the initial tension in the long direction acting on the substrate P is To, and the tension To Assuming that the amount (deformation amount) in which the substrate P expands and contracts in the longitudinal direction is ΔLto, the length L between the guide roller GR1 and the guide roller GR2 is expressed as L = Lo + ΔLto. Using the longitudinal elastic modulus E of the substrate P, the deformation amount ΔLto is ΔLto = Lo · To / E, and the initial tension To is expressed by To = ΔLto · E / Lo.

On the other hand, in the range of the length L ′ in the longitudinal direction of the substrate P whose temperature is adjusted, the substrate expands (deforms) in the longitudinal direction as the temperature changes by Δt, so the amount of deformation ΔLtt of the substrate P accompanying the temperature change Is expressed as ΔLtt = L ′ · Tα · Δt. Assuming that the stress acting on the substrate P by the deformation amount ΔLtt, that is, the tension acting on the substrate P after the temperature change Δt is T ′, T ′ = (ΔLto−ΔLtt) · E / Lo. From the above, the tension change ΔT is represented by ΔT = T′−To, and is represented by the following equation (2).
ΔT = (ΔLto−ΔLtt) · E / Lo−ΔLto · E / Lo (2)

When the equation (2) is arranged and transformed into an equation including the thermal expansion coefficient Tα and the temperature change Δt, the tension change ΔT is expressed as the following equation (3).
ΔT = −To · L ′ · Tα · Δt / ΔLto (3)

Here, since the deformation amount ΔLto [ΔLto = Lo · To / E] is sufficiently small with respect to the length Lo and can be regarded as a relationship of Lo >> ΔLto, the relationship of L = Lo + ΔLto can be approximately handled by L ≒ Lo. . Therefore, equation (3) is approximately expressed by the following equation (4), which is the same as equation (1) above.
ΔT ≒ −To · L ′ · Tα · Δt / (L · To / E)
=-To · L '· T α · Δ t · E / L
= −L ′ / L · Δt · Tα · E (4)

  As described above, the tension change ΔT has a length L between the guide roller GR1 and the guide roller GR2, a temperature adjustment length L ′, and a temperature regardless of the original tension T acting on the substrate P. It is determined by the change Δt and the physical property values (thermal expansion coefficient Tα, longitudinal elastic modulus E) of the substrate P, and the larger the temperature change Δt, the larger the tension change ΔT. In addition, the ratio of the length in the longitudinal direction (temperature adjustment length) L 'in which the temperature change occurs to the length L in the longitudinal direction of the substrate P to which the tension T is applied (acting) is The larger the change, the larger the change in tension ΔT. As the tension change ΔT is larger, the bending moment M generated in the substrate P is also larger.

  Although the example in which the substrate P is shifted in the width direction using the temperature adjustment unit 62 has been described, the temperature adjustment unit 64 is used to change the temperature of the substrate P in the width direction of the substrate P. The distribution of the applied tension T in the width direction may be adjusted. For example, the temperature control unit 64 reduces the amount of heat generation of the heat generating member 66 located on the -Y direction side (including the amount of heat generation of 0) and increases the heat generation amount of the heat generating member 66 located on the + Y direction side. May be Even in this case, since a temperature difference occurs between the −Y direction side and the + Y direction side of the substrate P, a bending moment M is generated, and the position of the substrate P in the width direction can be shifted in the Y direction. Alternatively, the temperature distribution in the width direction of the substrate P may be changed by using both the temperature adjustment unit 62 and the temperature adjustment unit 64, and the distribution in the width direction of the tension T applied to the substrate P may be adjusted. . That is, the temperature adjustment units 62 and 64 may set the temperature on the side opposite to the side where the position of the substrate P is shifted in the width direction to be higher than the temperature on the side where the position is shifted.

  FIG. 6 is a view showing another example of the distribution in the width direction of the tension T applied to the substrate P when the temperature of the substrate P is changed in the width direction of the substrate P using the temperature adjustment unit 62. is there. The black dots (dots) applied to the substrate P in FIG. 6 indicate the temperature of the substrate P, as in FIG. 5, and indicate that the temperature of the substrate P is higher as the region with more black dots. Therefore, in the example shown in FIG. 6, the temperature adjusting portion 62 includes a plurality of heating elements 66 so that the temperature at the center side in the width direction of the substrate P becomes the highest and the temperature at both ends in the width direction of the substrate P becomes the lowest. It is a figure when controlling the calorific value of. That is, the temperature adjustment unit 62 minimizes the amount of heat generation of the heat generating body 66 located closest to the -Y direction side and the + Y direction side among the plurality of heat generating bodies 66 (heat generation amount includes 0), and the width direction center The heat generation amount of the heat generating body 66 located at the top is made the largest, and the heat generation amount of the heat generating body 66 is gradually increased from the both ends in the width direction of the substrate P toward the center in the width direction. The temperature of P has a slope.

  Therefore, the tension applied to the substrate P decreases from the both ends in the width direction toward the center in the width direction. In this case, the tension T1 and T2 of the region of the substrate P facing the heating element 66 located closest to the -Y direction side and the + Y direction side is the highest, and the region facing the heating element 66 located at the center in the width direction Tension T3 is the lowest. As a result, since the tension at both ends in the width direction of the substrate P is higher than the center in the width direction, it is possible to suppress the occurrence of wrinkles in the width direction center of the substrate P.

  The tension distribution adjusting unit 60 (the temperature adjusting units 62 and 64) changes the temperature to be applied in the width direction of the substrate P according to the control of the control unit 18, and makes the temperature of the substrate P have a slope. The control unit 18 controls the tension distribution adjusting unit 60 (temperature adjusting units 62 and 64) in accordance with the position of the alignment mark Ks (Ks1 to Ks3) detected by the alignment microscope AM (AM1 to AM3). For example, as shown in FIG. 7, the position in the width direction of the substrate P is shifted to the + Y direction side between the guide rollers GR1 and GR2, whereby the substrate P is transported obliquely with respect to the rotation axis of the guide roller GR2. If it is, the substrate P is carried obliquely with respect to the rotation axis AX of the rotating drum 20. As a result, the exposure accuracy of the exposure apparatus EX may be reduced.

  Therefore, based on the detected position of the alignment mark Ks, the control unit 18 determines that the substrate P is carried in obliquely (inclined in) with respect to the rotation axis AX of the rotating drum 20 or the substrate P When it is determined that the substrate P is carried into the rotary drum 20 by shifting from the desired position in the width direction of the substrate, the tension distribution adjusting unit 60 (the temperature adjusting units 62 and 64) is controlled to The position of P in the width direction (Y direction) is shifted in the Y direction. In the example shown in FIG. 7, the position in the width direction of the substrate P is shifted to the -Y direction side. In FIG. 7, the substrate P shifted to the −Y direction side is represented by a substrate P ′, and the substrate P ′ is represented by a two-dot chain line. Thereby, the substrate P can be transported so as to be orthogonal to the rotation axis AX of the rotary drum 20 in the axial direction. That is, the longitudinal direction of the substrate P carried into the rotary drum 20 can be orthogonal to the axial direction of the rotation axis AX of the rotary drum 20. That is, it is possible to correct an inclination error in the transport direction of the substrate P or a position error in the width direction of the substrate P.

  As described above, since the temperature is changed along the width direction of the substrate P by the temperature adjustment units 62 and 64 (because the temperature distribution is changed), the tension applied to the substrate P in a non-contact state with the substrate P Distribution in the width direction can be changed. Thereby, the position in the width direction of the substrate P can be precisely and smoothly adjusted. Moreover, it can also be suppressed that the center of the substrate P in the width direction is wrinkled.

  In the first embodiment, the tension distribution adjusting unit 60 of the edge position controller EPC includes both the temperature adjusting unit 62 and the temperature adjusting unit 64. However, only one of them may be provided. .

Modification of First Embodiment
The first embodiment may be modified as follows.

  (Modification 1) In the first embodiment, the temperature adjustment units 62 and 64 of the edge position controller EPC use a plurality of heating elements 66 arranged along the width direction of the substrate P to Although the temperature distribution in the width direction is adjusted, at least one of the temperature control units 62 and 64 may have only one heating element 66 whose size covers the entire width of the substrate P. In the first modification, as shown in FIG. 8, the tension distribution adjusting unit 60 further includes a driving unit 68 that moves the temperature adjusting units 62 and 64. In addition, in FIG. 8, the example which provided the temperature control parts 62 and 64 above the board | substrate P (+ Z direction side) is shown.

  The driving unit 68 moves the temperature control units 62 and 64 in the vertical direction (Z direction), and the temperature control units 62 and 64 can freely tilt with respect to the surface of the substrate P in the width direction of the substrate P. It is rotationally moved about the rotation axis Ax1. The rotation axis Ax1 is provided at the center in the width direction of the temperature control units 62 and 64. As described above, the temperature to be applied to the substrate P can be changed by moving the temperature control units 62 and 64 in the vertical direction. Further, by rotating the temperature adjustment units 62 and 64 about the rotation axis Ax 1, even if there is only one heating element 66, the temperature to be applied in the width direction of the substrate P is inclined (gradient) It is possible to have it. In the first modification as well, the same effect as that of the first embodiment can be obtained, and the temperature gradient of the substrate P can be made smoother. The drive unit 68 moves the temperature adjustment units 62 and 64 according to the control of the control unit 18.

  (Modification 2) In the modification 2, at least one of the temperature control units 62 and 64 includes a roller-type heating element 66A instead of the plate-shaped heating element 66, and the heating element 66A is in the low friction state and the substrate P contacts the substrate P and rotates as the substrate P is transported. FIG. 9 is a side view of the temperature control unit 62 in the present modification 2, and FIG. 10 is a plan view of the temperature control unit 62 in the present modification 2. The temperature control unit 62 includes a plurality of temperature control rollers 70 having a plurality of roller-type heating elements 66A along the transport direction of the substrate P. The temperature control roller 70 is constituted by a plurality of heating elements 66A arranged such that the rotation axes coincide in the Y direction. The plurality of heating elements 66A disposed along the Y direction of the temperature control roller 70 are disposed so as to cover the entire width of the substrate P. In the example shown in FIG. 9, each temperature control roller 70 is composed of five heating elements 66A. The plurality of heating elements 66A have the same diameter, and the lengths in the Y direction are the same. The length in the Y direction of each heating element 66A of the temperature control roller 70 may be changed, and the length in the Y direction of the heating element 66A may be changed for each temperature control roller 70.

  The respective heating elements 66A are individually provided so as to be rotatable. Further, the calorific value of each heating element 66A can be individually controlled. Further, the temperature control unit 62 controls the heating elements 66A of the respective temperature control rollers 70 such that the heating elements 66A of the respective temperature control rollers 70 arranged at the same position in the width direction of the substrate P have the same amount of heat generation. Do. That is, control is performed such that the amount of heat generated by the heating element 66A of each temperature control roller 70 disposed in parallel with the X direction becomes the same. Thereby, for example, the calorific value of the heating element 66A of each temperature control roller 70 disposed closest to the + Y direction is the same, and the calorific value of the heating element 66A of each temperature regulation roller 70 disposed at the center in the width direction is the same. It becomes.

  Similarly, the temperature control unit 64 may be provided with a temperature control roller 70 provided with a roller-type heating element 66 instead of the plate-shaped heating element 66. The temperature control roller 70 of the temperature control unit 64 may have a number of heating elements 66A different from the number of heat generating elements 66A constituting the temperature control roller 70 of the temperature control unit 62 (not shown). For example, the temperature control roller 70 of the temperature control unit 64 may be composed of two heating elements 66A. It should be noted that, unlike the guide rollers GR1 and GR2, the roller-type heating element 66A does not apply tension to the substrate P, and does not bend the transport path of the substrate P.

  Since the heating element 66A of the temperature control roller 70 of the temperature control units 62 and 64 is in contact with the substrate P in a low friction state, the heating element 66A also rotates when the substrate P is transported along the transport direction. Then, the temperature adjustment units 62 and 64 apply the temperature to the substrate P so as to change the temperature distribution in the width direction of the substrate P by controlling the amount of heat generation of each heating element 66A of the plurality of temperature adjustment rollers 70. It is possible to adjust the distribution of the tension applied to the substrate P in the width direction (Y direction). Therefore, also in the second modification, the same effect as that of the first embodiment can be obtained. Further, in the second modification, since the heating element 66A is in contact with the substrate P, the temperature distribution in the width direction of the substrate P can be easily adjusted as compared with the case where the heating element 66 is not in contact with the substrate P. The temperature adjustment units 62 and 64 of the second modification also control the amount of heat generation of each heating element 66A according to the control of the control unit 18.

  (Modification 3) In the first embodiment and Modifications 1 and 2 thereof, the temperature control units 62 and 64 are provided with the heating element 66 or the heating element 66A that generates heat to apply temperature to the substrate P. However, in place of the heat generating body 66 or the heat generating body 66A, a cooling body for applying a cooled temperature to the substrate P (cooling the substrate P) is provided, and the temperature which each cooling body applies to the substrate P is individually controlled You may do it. Even in this case, the same effect as the first embodiment can be obtained. In addition, the tension distribution adjusting unit 60 may include both a temperature adjusting unit having the heating element 66 and a temperature adjusting unit provided with a cooling body.

  (Modification 4) As shown in FIG. 11, the edge position controller EPC described in the first embodiment and the modifications 1 to 3 further includes a substrate as described in the above-mentioned patent document 2 An edge detection unit 80 that detects the edge of P, a rotation movement roller 82 that can be moved in the axial direction (S direction) of the rotation shaft 82 a by which the substrate P is wound while a predetermined tension is applied, You may provide the roller drive part 84 which moves the movement roller 82 to an axial direction (S direction). The edge detection unit 80 and the rotational movement roller 82 are provided on the upstream side (−X direction side) in the transport direction of the substrate P with respect to the guide roller GR1 (tension distribution adjustment unit 60). When the edge of the substrate P detected by the edge detection unit 80 deviates from the reference position, the control unit 18 controls the roller drive unit 84 to move the rotational movement roller 82 in the axial direction (S direction). The position of the substrate P in the width direction is adjusted. Accordingly, after the position in the width direction of the substrate P is roughly adjusted roughly by the rotational movement roller 82, the position in the width direction of the substrate P can be finely adjusted by the tension distribution adjusting unit 60. Therefore, the position adjustment in the width direction of the substrate P can be performed quickly and with high accuracy.

Second Embodiment
The tension distribution adjusting unit 60 includes the temperature adjusting units 62 and 64 in the first embodiment and the respective modifications thereof, but in the second embodiment, the temperature adjusting unit 62 is replaced with An external force application unit 90 is provided which changes the external force for bending the substrate P in the width direction and applies the external force to the substrate P in a non-contact state. In the second embodiment, the same components as those in the first embodiment are denoted by the same reference numerals or omitted from the drawings, and only different parts will be described.

  As shown in FIG. 12, the tension distribution adjusting unit 60 according to the second embodiment includes an external force applying unit 90 and a gas supply unit 92 that supplies a gas to the external force applying unit 90. The external force applying unit 90 is disposed above the substrate P (in the + Z direction), and has a plurality of nozzles (jetting portions) 94 disposed along the width direction of the substrate P. The plurality of nozzles 94 are arranged at predetermined intervals so as to cover the entire width of the substrate P. In the example shown in FIG. 12, seven nozzles 94 are provided. The nozzle 94 applies an external force to the substrate P to bend the substrate P downward (in the −Z direction) by blowing (jetting) a gas onto the surface of the substrate P. The nozzle 94 may apply an external force to the substrate P to bend the substrate P upward (+ Z direction) by blowing a gas on the back surface of the substrate P.

  The gas supply unit 92 supplies the external force application unit 90 with the gas to which a constant pressure is applied, according to the control of the control unit 18. The external force application unit 90 controls the pressure of the gas ejected from each nozzle 94. For example, the external force applying unit 90 individually controls the pressure of the gas sprayed from each nozzle 94 by adjusting the throttling of each nozzle 94 according to the control of the control unit 18. Thereby, the external force applied to the substrate P can be changed in the width direction of the substrate P.

  When an external force for bending the substrate P is applied, the tension T in the region of the substrate P to which the external force is applied is increased. Also, the amount of increase in tension T increases as the applied external force increases. Therefore, by changing the external force applied in the width direction of the substrate P by the external force applying unit 90, the distribution in the width direction (Y direction) of the tension T applied to the substrate P can be adjusted.

FIG. 13 is a diagram for explaining an increase in tension T due to the application of an external force. When the gas is blown to the substrate P by the nozzle 94 of the external force applying unit 90, the substrate P is bent downward. Assuming that the inclination angle of the substrate P generated by this deflection is α, the change in tension T per unit width (tension change) ΔT can be expressed by equation (5), where E is the longitudinal elastic coefficient of the substrate P.
ΔT ≒ E · (1 / cos (α) −1) (5)

  In Equation (5), regardless of the original tension T, the local extension of the substrate P due to the external force of the substrate P is the same as described in the above Equations (2) to (4). The change, that is, the rate of change of the shape (strain) represented by the longitudinal elastic coefficient E corresponds to the tension change ΔT. That is explained below.

A length between the guide roller GR1 and the guide roller GR2 (length L) when the substrate P is in no tension state is Lo, and the length of the substrate P according to the initial tension To is zero when the angle α is zero From the relationship of L = Lo + ΔLto, the amount of deformation in the direction (here, the amount of elongation) ΔLto is ΔLto = Lo · To / E. Therefore, the length Lo in the no-tension state is represented by Lo = ΔLto · E / To. Further, assuming that the amount (elongation amount) in which the substrate P is deformed in the longitudinal direction by the angle α under the initial tension To is ΔLα, the elongation amount ΔLα is expressed as Expression (6).
ΔLα = L · (1 / cos (α) −1) (6)

The tension change ΔT can be obtained by ΔT = To · (ΔLα / ΔLto) by comparing the amount of extension ΔLto when the angle α is zero and the amount of extension ΔLα other than zero. Organizing this relational expression, it becomes like following Numerical formula (7).
ΔT = To · [L · (1 / cos (α) −1)] / [Lo · To / E]
= [L · (1 / cos (α) -1)] / [Lo / E]
= (L / Lo) · E · (1 / cos (α) -1) (7)

  As described above, the amount of deformation ΔLto is sufficiently small with respect to the length Lo, and can be regarded as a relationship of Lo >> ΔLto. Therefore, since the relationship of L = Lo + ΔLto can be treated approximately as L ≒ Lo, L / Lo ≒ 1 and equation (7) is approximated as equation (5). Therefore, as shown in FIG. 13, even when tension change ΔT is generated on the surface of the substrate P from the direction orthogonal to the surface of the substrate P by applying external force (wind pressure), regardless of the original tension T size. The tension change ΔT can be determined by the angle α of the substrate P between the guide roller GR1 and the guide roller GR2 and the longitudinal elastic modulus E of the substrate P. As this angle (alpha) becomes large like this Numerical formula (5) (or Numerical formula (7)), tension change (DELTA) T becomes large. That is, when the pressure of the gas sprayed on the substrate P is increased, the angle α is increased. Therefore, the higher the pressure sprayed on the substrate P, the larger the tension change ΔT, and the tension T applied to the substrate P is increased.

  For example, when shifting the substrate P to the -Y direction side along the width direction of the substrate P, the external force to be applied to the side to be shifted (-Y direction side) is maximized and the side opposite to the shifting side (+ Y The external force applied to the substrate P is gradually reduced from the −Y direction side toward the + Y direction side by minimizing the external force applied to the direction side (including an external force of 0). That is, the pressure of the gas spouted from the nozzle 94 in the most -Y direction is made the highest, and the pressure of the gas spouted from the nozzle 94 in the most + Y direction is the smallest (including pressure 0), The pressure of the gas spouted from the nozzle 94 is gradually decreased in the direction from + to the + Y direction side, so that the external force applied to the substrate P in the width direction of the substrate P has a slope (gradient).

  Therefore, as the substrate P moves from the + Y direction side to the −Y direction side, the applied tension T increases. Thereby, a difference (external force difference) is generated in the external force applied (in the −Y direction side and the + Y direction side) in the width direction of the substrate P, whereby a bending moment M is generated in the substrate P. It can be shifted to the Y direction side. As the difference in external force increases, the change in tension applied to the substrate P in the width direction also increases, and the bending moment M also increases, so the amount of movement of the substrate P in the width direction shifts in the Y direction also increases.

  Further, the external force applied to both ends in the width direction of the substrate P is maximized, the external force applied to the center in the width direction of the substrate P is minimized, and applied to the substrate P from the center in the width direction toward both ends. The external force may be gradually increased. That is, the pressure of the gas spouted from the nozzle 94 on the -Y direction side and the + Y direction side is maximized, and the pressure of the gas spouted from the nozzle 94 in the width direction center is minimized (including pressure 0). The pressure of the gas ejected from the nozzle 94 may be gradually increased toward the opposite ends of the substrate P from the center of the direction. As a result, the tension at both ends in the width direction of the substrate P is higher than the center in the width direction, so it is possible to suppress the wrinkles from coming close to the center in the width direction of the substrate P.

  As described above, the external force applying unit 90 applies the external force for bending the substrate P along the width direction of the substrate P with respect to the width direction (Y direction) to the substrate P, and thus the noncontact state with the substrate P Distribution of tension applied to the substrate P can be changed. Thereby, the position in the width direction of the substrate P can be precisely and smoothly adjusted. Moreover, it can also be suppressed that the center of the substrate P in the width direction is wrinkled.

[Modification of Second Embodiment]
The second embodiment may be modified as follows.

  (Modification 1) In the second embodiment, the control unit 18 adjusts the pressure of the gas jetted from the nozzle 94 by adjusting the throttling of the nozzle 94 of the external force applying unit 90 of the edge position controller EPC. Although the pressure is adjusted, all pressures of the gases ejected from the plurality of nozzles 94 may be constant pressures. In the first modification, as shown in FIG. 14, the tension distribution adjusting unit 60 further includes a drive unit 96 that moves the external force applying unit 90. The drive unit 96 moves the external force applying unit 90 in the vertical direction (Z direction), or allows the external force applying unit 90 to be freely inclined with respect to the surface of the substrate P in the width direction of the substrate P. It is rotationally moved to the center. The rotation axis Ax2 is provided at the center in the width direction of the external force applying portion 90. Thus, the external force applied to the substrate P can be changed by moving the external force applying portion 90 in the vertical direction. Further, by rotating the external force application unit 90 about the rotation axis Ax 2, even if the pressure of the gas ejected from the plurality of nozzles 94 is constant, the external force applied with respect to the width direction of the substrate P is inclined It is possible to have). In the first modification as well, the same effect as that of the second embodiment can be obtained, and the gradient of the external force applied to the substrate P can be made smoother. The drive unit 96 moves the external force application unit 90 according to the control of the control unit 18.

  (Modification 2) The edge position controller EPC described in the second embodiment and the modification 1 thereof further detects the edge of the substrate P as in the modification 4 of the first embodiment. The edge detection unit 80, a rotational movement roller 82 capable of moving the substrate P in the axial direction (S direction) of the rotational shaft 82a in a state in which a predetermined tension is applied, and the rotational movement roller 82 in the axial direction You may provide the roller drive part 84 moved to (S direction) (refer FIG. 11). The edge detection unit 80 and the rotational movement roller 82 are provided on the upstream side (−X direction side) in the transport direction of the substrate P with respect to the guide roller GR1 (tension distribution adjustment unit 60). When the edge of the substrate P detected by the edge detection unit 80 deviates from the reference position, the control unit 18 controls the roller drive unit 84 to move the rotational movement roller 82 in the axial direction (S direction). The position of the substrate P in the width direction is adjusted. Accordingly, after the position in the width direction of the substrate P is roughly adjusted roughly by the rotational movement roller 82, the position in the width direction of the substrate P can be finely adjusted by the tension distribution adjusting unit 60. Therefore, the position adjustment in the width direction of the substrate P can be performed quickly and with high accuracy.

  (Modification 3) The external force application unit 90 of the edge position controller EPC described in the second embodiment and the modifications 1 and 2 of the second embodiment, the pressure of the gas sprayed on the substrate P (the external force to bend the substrate P) While changing with respect to the width direction of the substrate P and applying, the temperature of the gas to be sprayed may also be changed with respect to the width direction of the substrate P. That is, the external force application unit 90 according to the third modification, like the temperature adjustment units 62 and 64 described in the first embodiment, changes the temperature in the width direction of the substrate P in a noncontact manner, thereby the substrate P It may have the function of adjusting the distribution in the width direction of the tension acting on the belt. Thereby, the temperature of the substrate P can be changed with respect to the width direction while changing the external force for bending the substrate P with respect to the width direction, and the distribution of the tension acting on the substrate P can be changed more effectively. it can.

Third Embodiment
A flexible display panel (for example, an organic EL display), a touch panel, a color filter, and the like by using the exposure apparatus EX equipped with the edge position controller EPC described in the first and second embodiments and the respective variations thereof. Various electronic devices can be manufactured. In the third embodiment, a manufacturing process for manufacturing a thin film transistor (TFT), which is a type of electronic device used for a display panel, will be described using the flowchart of FIG. Although a bottom gate TFT is described as an example here, the process is almost the same even for a top gate TFT.

  First, the process apparatus PR1 performs an activation process by irradiating the surface of the substrate P, which is the base of the display panel, with ultraviolet light, atmospheric pressure plasma, electron beam, X-ray, or the like (step S1). Then, the process device PR1 uniformly or selectively applies a photosensitive functional liquid on the surface of the substrate P, passes the substrate P through a drying furnace having a glass transition temperature or less, and passes the photosensitive functional layer A film is formed (step S2). As the photosensitive functional layer, as described above, there are photosensitive silane coupling agents, photosensitive reducing agents, etc., and they can be used properly depending on the process.

  The substrate P on which the photosensitive functional layer is formed is sent to the exposure apparatus EX, and the pattern for the first layer corresponding to the gate electrode of the TFT and the wiring accompanying it is exposed to the photosensitive functional layer (drawing ) (Step S3). At this time, the control unit 18 controls the edge position controller EPC based on the positional information of the alignment marks Ks (Ks1 to Ks3) detected by the alignment microscope AM (AM1 to AM3), and the width direction of the substrate P The pattern may be exposed by adjusting the position in the image or correcting the exposure position by the exposure head 16. The exposure apparatus EX may form the alignment mark Ks on the substrate P by exposing the mark pattern to be the alignment mark Ks also when exposing (drawing) the pattern for the first layer. In this case, since the alignment mark Ks is formed at the time of exposure, the detection of the alignment mark Ks by the alignment microscope AM is not performed.

  The substrate P thus exposed by the exposure apparatus EX is sent out to the process apparatus PR2 and the next step is performed, but depending on the type of photosensitive functional layer formed in step S2, steps S4A and S5A are performed. One of the process and the process of steps S4B and S5B is performed.

  When a photosensitive silane coupling agent whose lyophobicity is modified is used as the photosensitive functional layer, the portion corresponding to the gate electrode exposed to the ultraviolet light on the substrate P and the wiring accompanying it is repellent Since the liquid property is reformed to lyophilic, the process proceeds to step S4A. In step S4A, the process apparatus PR2 selectively applies (patterns) the conductive ink on the lyophilic portion (exposed portion) to form a pattern (gate electrode and wiring associated therewith). Do. The selective application of the conductive ink may be an inkjet method, gravure printing, offset printing or the like. Further, as the conductive ink, for example, an ink containing conductive nanoparticles such as silver and copper is used. The patterned layer of the gate electrode and the wiring formed of the conductive ink is referred to as a first layer.

  Then, the process apparatus PR2 anneals to the substrate P in order to strengthen the electrical coupling between the nanoparticles contained in the conductive ink selectively applied to the substrate P and to remove the solvent of the conductive ink. Processing and drying processing are performed (step S5A). A method may be employed in which the substrate P is irradiated with high-intensity pulsed light from a strobe lamp as an annealing process to strengthen the electrical coupling between the nanoparticles.

  On the other hand, when using a photosensitive reducing agent in which the plating reducing group is exposed to the portion exposed to ultraviolet light as the photosensitive functional layer, it corresponds to the gate electrode exposed to the ultraviolet light on the substrate P and the accompanying wiring. Since the plating reducing group is exposed to the exposed portion, the process proceeds to step S4B. In step S4B, the process device PR2 performs electroless plating on the substrate P. Specifically, the process apparatus PR2 immerses the substrate P in a plating solution containing palladium ions or the like for a certain period of time, and exposes a pattern made of palladium to be a gate electrode or wiring, where a plating reduction group is exposed (exposed part Deposit on top of In the plating process, a plating layer of a pattern made of palladium is used as a base, and plating with another metal (gold, copper, etc.) is further performed thereon. The pattern layer of the gate electrode and the wiring deposited by palladium is called a first layer. This first layer includes the layer if it is further plated using a pattern layer of palladium as a base.

  Then, the process device PR2 cleans the substrate P subjected to the plating treatment with pure water, and then sends the substrate P to a drying furnace having a temperature equal to or lower than the glass transition temperature to dry the substrate P until the moisture content thereof becomes a predetermined value or less. (Step S5B).

  After the process of step S5A or step S5B, it is determined whether to form the second layer (step S6). If the first pattern layer (here, the gate electrode and the wiring associated therewith) is formed, it is determined in step S6 that the second layer is to be formed. In the actual process, when the first layer is formed, it is sent to the process of forming the second layer, so there is no determination process of this step S6.

  Here, when the process of step S5A or step S5B is completed, the substrate P is taken up by the collection roll, and the taken-up collection roll is mounted on another device manufacturing system as a supply roll. This other device manufacturing system has a roll-to-roll structure, and includes an insulating layer film forming apparatus, a process apparatus PR1, an exposure apparatus EX, a process apparatus PR2, and a semiconductor layer forming apparatus (not shown). . The process apparatus PR1, the exposure apparatus EX, and the process apparatus PR2 of another device manufacturing system have substantially the same configuration as the process apparatus PR1, the exposure apparatus EX, and the process apparatus PR2 of the device manufacturing system 10. The supply roll mounted to another device manufacturing system supplies the substrate P to the insulating layer film forming apparatus, and the subsequent steps are performed. In addition, you may process the process of the following processes with respect to the board | substrate P continuously, without winding up the board | substrate P which passed through the process of step S5 A or step S5 B with the said collection | recovery roll.

  When it is determined in step S6 that the second layer is to be formed, the insulating layer deposition apparatus is configured to deposit the second layer on the basis of the pattern of the first layer (the gate electrode and the wiring associated therewith). A solution (insulating solution) is selectively applied (patterned) to form a pattern to be a gate insulating layer (step S7). In the step of forming the gate insulating layer, the insulating solution is selectively applied using a printing method using a plate, an inkjet method, or the like. Treatment to evaporate and cure the solvent component. The formed gate insulating layer is referred to as a second layer.

  Then, in the substrate P on which the pattern of the insulating layer, which is the second layer, is formed, a photosensitive functional layer is formed on the second layer by the process device PR1 as in step S2. Then, as in step S3, the exposure function EX exposes (draws) a pattern for the third layer having a shape corresponding to the source electrode and drain electrode of the TFT and the wiring associated therewith. At this time, the pattern for the third layer needs to be precisely aligned with the pattern (the gate electrode and the wiring) of the first layer. Therefore, based on the position information of the alignment marks Ks (Ks1 to Ks3) detected by the alignment microscope AM (AM1 to AM3), the control unit 18 performs an edge using the change in temperature distribution and the change in wind pressure distribution described above The position controller EPC is controlled to precisely adjust the position in the width direction of the substrate P, or the exposure position by the exposure head 16 is corrected to expose the pattern for the third layer. Thus, it is possible to precisely align the pattern for the third layer (the source electrode and the drain electrode and the associated wiring) and the formed pattern of the first layer (the gate electrode and the associated wiring).

  Then, when a photosensitive silane coupling agent is used as the photosensitive functional layer, as in steps S4A and S5A, the conductive portion is exposed on the portion (exposed portion) that has become lyophilic by the process device PR2. The selective ink is applied to form a pattern (a source electrode and a drain electrode and an associated wiring), and then an annealing treatment and a drying treatment are applied. On the other hand, when a photosensitive reducing agent is used as the photosensitive functional layer, similarly to steps S4B and S5B, the pattern by palladium on the portion (exposed portion) to which the plating reducing group is exposed by the process device PR2 (Source electrode and drain electrode and associated wiring) are deposited and then subjected to a drying process. The patterned layer of the source and drain electrodes and the wiring associated therewith is called a third layer.

  If it is determined in step S6 that the second layer is not to be formed, the process proceeds to step S8. In step S8, the semiconductor layer forming apparatus forms a pattern to be a semiconductor layer of a TFT between the channel lengths of the source electrode and the drain electrode. The formation of the semiconductor layer is performed by a method suitable for a semiconductor material (for example, an organic semiconductor, an oxide semiconductor, a carbon nanotube, or the like). The step of forming the semiconductor layer selectively applies the semiconductor material using a printing method using a plate, an inkjet method or the like, the semiconductor layer forming apparatus is an annealing process for orienting crystals of the applied semiconductor material. (For example, thermal annealing, light annealing, electromagnetic wave annealing, etc.) are also performed. The formed semiconductor layer is referred to as a fourth layer.

  As described above, when the patterns of the first to fourth layers are stacked on the substrate P, an element functioning as a TFT is completed, but in an organic EL display or the like, the organic EL on the fourth layer is used. Since the light emitting layer is further stacked, the process proceeds to the next step, and after the insulating layer is formed with a uniform thickness over the entire surface of the substrate P, the light emitting layer is formed.

  In each of the above-described embodiments and the modifications, the exposure apparatus (pattern drawing apparatus) EX of the raster scan type has been described, but it is disclosed in the patent document 1 or the international publication 2013/146184 pamphlet The exposure apparatus may be an exposure apparatus using a mask such as that described above, or may be a maskless exposure apparatus that exposes a predetermined pattern using a digital micromirror device (DMD).

  As described above, in the case of using a precise patterning device (exposure device EX, inkjet printing device, etc.) to form an electronic device on a flexible substrate P, the width direction of the substrate P to be introduced into the patterning device It is desirable to position the position with precision that matches patterning accuracy (resolution) and registration accuracy. According to each of the above embodiments, a precise pattern for an electronic device can be formed on the substrate P by performing the following steps.

  When a pattern for an electronic device is formed on the surface of the substrate P by the patterning device while conveying the long flexible substrate P in the longitudinal direction, the substrate intersects with the lengthwise direction of the substrate P carried into the patterning device In the process of measuring the position error in the width direction and the tilt error in the transport direction of the substrate P, and arranged at two distant locations on the transport path of the substrate P on the upstream side of the patterning apparatus The distribution of the tension (internal stress) acting on the substrate P in the width direction between the pair of guide members (rollers) which bend the transport path of the substrate P in a state of being applied is based on the measured position error and tilt error And adjusting the substrate P in a noncontact state or in a low friction state. The position error in the width direction of the substrate P and the tilt error in the transport direction of the substrate P can be measured by detecting the alignment mark Ks.

  In each of the above-described embodiments, each of the pair of guide members (guide rollers GR1 and GR2) bends the transport path of the sheet substrate P. However, of the pair of guide members, the transport path of the sheet substrate P is The guide member (GR1) located on the upper stream side is a nip type roller for sandwiching the sheet substrate P, and the guide member (GR2) located on the downstream side contacts the sheet substrate P on the outer peripheral surface to bend the transport path At the nip type roller, the transport path of the sheet substrate P may be passed straight without being bent. Therefore, bending of the transport path of the substrate P by the pair of guide members (guide rollers GR1 and GR2) is performed twice by either of the pair of guide members (guide rollers GR1 and GR2). The configuration to be performed can be selected appropriately.

DESCRIPTION OF SYMBOLS 10 ... Device manufacturing system 12 ... Transport apparatus 14 ... Light source device 16 ... Exposure head 18 ... Control part 20 ... Rotational drum 60 ... Tension distribution adjustment part 62, 64 ... Temperature adjustment part 66, 66A ... Heating body 68, 96 ... Drive part 70 temperature adjustment roller 90 external force application unit 92 gas supply unit 94 nozzle AM, AM1 to AM3 alignment microscope DR1, DR2, R1, R2 drive roller EPC edge position controller EX exposure device GR1, GR2 guide Rollers Ks, Ks1 to Ks3 ... alignment marks L, L1 to L5 ... scanning lines P ... substrates PR1, PR2 ... process devices U, U1 to U5 ... scanning units

Claims (4)

A pattern forming method for forming a pattern for an electronic device by a patterning device on a surface of a sheet substrate while conveying a long flexible sheet substrate in a lengthwise direction,
A measurement step of measuring a positional error in a width direction intersecting the longitudinal direction of the sheet substrate or an inclination error in a transport direction of the sheet substrate before being carried into the patterning device;
On the upstream side of the patterning device, there are a pair of two arranged on the transport path of the sheet substrate at a distance to bend the transport path of the sheet substrate by frictional contact in a state where a predetermined tension is applied in the longitudinal direction. using a transport device comprising a guide roller, the distribution in the width direction of the magnitude of the tension acting on the sheet substrate between the pair of guide rollers, on the basis of the measured positional error or tilt error, the sheet substrate as adjusted during shipment, the temperature adjustment unit provided in a non-contact state with the sheet substrate between the pair of guide rollers, and adjusting step of providing a temperature distribution with respect to the width direction of the sheet substrate ,
A pattern formation method including: The pattern forming method according to claim 1 ,
The temperature adjustment unit generates a bending moment in the width direction on the sheet substrate between the pair of guide rollers to shift the position of the sheet substrate along the width direction. A pattern forming method in which the temperature on the side opposite to the side to be shifted is set higher than the temperature on the side to be shifted. The pattern forming method according to claim 1 ,
The pattern formation method, wherein the temperature adjustment unit sets the temperature on the central side in the width direction of the sheet substrate to be higher than the temperature on both end sides in the width direction. The pattern forming method according to any one of claims 1 to 3 , wherein
The temperature control unit includes an ejection unit configured to spray gas toward the surface of the sheet substrate from each of a plurality of nozzles disposed along the width direction of the sheet substrate, and the temperature of the gas is set to the width of the sheet substrate Pattern formation method that changes in direction.

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