JP6522277B2 - Photomask, method of manufacturing photomask, method of transferring pattern, and method of manufacturing display - Google Patents

Description

  The present invention relates to a photomask provided with a transfer pattern, a method of manufacturing the photomask, a method of pattern transfer using the photomask, and a method of manufacturing a display device.

  In recent years, in the manufacture of a display device such as a liquid crystal display (LCD: Liquid Crystal Display), high transfer accuracy is required along with improvement of production efficiency due to enlargement of a photomask to be used. The liquid crystal display device has a structure in which a TFT substrate on which a thin film transistor (TFT) array is formed and a color filter on which an RGB pattern is formed are bonded, and a liquid crystal is sealed therebetween.

  FIG. 1 is a schematic view showing an example of a color filter. As shown in FIG. 1, the color filter is configured to include a colored portion 101 which selectively transmits only light of a specific wavelength, and a black matrix 102 (light shielding portion) which shields the light. The colored portion 101 is colored in each color of red, green and blue (RGB). FIG. 1A shows a stripe-arranged color filter, and FIG. 1B shows a mosaic-arranged color filter. Moreover, FIG. 1C has shown the cross-sectional schematic in the AA of FIG. 1A, or the BB line of FIG. 1B.

  In order to form a black matrix layer and each colored layer on a translucent substrate using a photomask, it is most advantageous to apply proximity exposure. This is because proximity exposure does not require a complicated optical system in the structure of the exposure apparatus as compared to projection exposure, and the cost of the apparatus is low, so that the production efficiency is high.

  FIG. 2 is a schematic view showing an exposure apparatus that performs proximity exposure. As shown in FIG. 2, the exposure apparatus 110 that performs proximity exposure includes a light source 111, an elliptical mirror 112 that functions as a focusing mirror, an integrator 113, and a collimation lens 114. As the light source 111, generally, a mercury lamp or the like having a wavelength range including i-line, h-line and g-line is used.

  In the exposure apparatus 110, the luminous flux emitted from the light source 111 is converted into luminous flux of uniform illuminance by the elliptical mirror 112, the integrator 113 and the collimation lens 114. Then, the light flux is irradiated to the photomask 120. The light beam transmitted through the photomask 120 exposes the photosensitive material film on the processing target layer of the transfer-receiving material 121 disposed at a predetermined proximity gap pg from the photomask 120.

  As described above, in proximity exposure, the transferred object 121 on which the photosensitive material film is formed is horizontally placed, and the pattern surface 120 a on which the transfer pattern is formed is opposed to the transferred object 121 with respect to the photomask 120. Hold as you want. Then, by irradiating light from the back surface side of the photomask 120, the pattern is transferred to the photosensitive material film of the transfer target body 121. At this time, a predetermined gap (proximity gap) is provided between the photomask 120 and the transfer target body 121.

  Generally, when the photomask is set in the exposure apparatus for proximity exposure, the outside of the area (also referred to as a pattern area) on the main surface on which the transfer pattern is formed and the transfer pattern is formed It hold | maintains by a holding member. That is, the holding member of the exposure apparatus is brought into contact with the vicinity of the opposing two or four sides forming the outer periphery of the photomask, whereby the photomask is held. Then, the photomask is disposed in the exposure apparatus in a substantially horizontal posture while holding a predetermined proximity gap.

  When proximity exposure is applied, it is difficult to correct distortion with an optical means at the time of transfer, and there is a problem that transfer accuracy tends to deteriorate compared to projection exposure.

  For example, since the photomask is bent by its own weight, the deflection of the photomask is corrected to some extent by the holding mechanism of the exposure apparatus. For example, in Patent Document 1, in a support mechanism for horizontally supporting a flat mask, a predetermined pressure is applied from the upper side of the mask to the outside of the support point of the holding member for supporting the photomask from the lower side to correct the deflection. How to do it is described.

  Further, Patent Document 2 describes a photomask substrate for reducing the variation due to the position of the proximity gap when mounted and used in a proximity exposure apparatus.

JP-A-9-306832 Unexamined-Japanese-Patent No. 2012-256798

  However, it has been found by the inventor that, even if it is useful to reduce the influence on pattern transfer due to the deflection of the photomask, it is not sufficient for manufacturing a precise display device for the above-mentioned application.

  For example, it is known that the main surface of the photomask substrate is deformed due to the difference in the direction and the magnitude of the force received by the photomask depending on the holding method of the photomask and the holding mechanism for reducing deflection. Furthermore, due to the flatness of the stage of the exposure apparatus and the thickness distribution of the transferred object placed on the exposure apparatus, it is almost impossible to completely suppress the in-plane variation of the proximity gap. Patent Document 2 describes a method of reducing such in-plane variation of the proximity gap by the shape of the substrate. However, there is a complication that the in-plane variation of the proximity gap differs depending on the exposure apparatus used.

  In proximity exposure, when in-plane variations in proximity gap occur, it becomes more difficult to transfer a punched pattern of fine line width. This is because light diffraction occurs at the edge of the slit-like cutout pattern, and as the cutout pattern has a finer width, the influence of the diffraction and the interference increases to an unignorable extent.

  FIG. 3 is a view exemplifying a light intensity distribution due to interference formed by transmitted light in proximity exposure. In FIG. 3, a photomask 120 provided with a removal pattern is provided such that the pattern surface 120 a is opposed to the transfer target body 121. At this time, a proximity gap pg is provided between the photomask 120 and the transferred object 121.

  A curve 122 schematically shows a light intensity curve based on an interference pattern formed by transmitted light when light is irradiated from the back surface side of the photomask 120. As shown in FIG. 3, light diffraction occurs at the edge of the punched pattern on the pattern surface 120a, and a complex interference pattern is formed.

  In proximity exposure, gaps in different sizes are generated depending on the position in the plane, and different diffraction patterns are generated accordingly, and the line width of the formed pattern and the light irradiation amount tend to vary. However, the intensity distribution of the transmitted light which the transfer medium actually receives at each position in the plane can not be easily estimated.

  By the way, a color filter and a TFT substrate as shown in FIG. 1 are manufactured by applying a photolithography process using a plurality of photomasks. In recent years, with the advancement of specifications such as brightness and operating speed of display devices which are final products, patterns of photomasks are miniaturized, and requirements for line width accuracy as a transfer result are becoming more severe.

  For example, in the black matrix for LCD, at least the performance improvement currently required for the LCD, namely, (1) operating speed, (2) brightness, (3) reduction of power consumption, and (4) high definition Thinning is considered to be effective for 2) to 4). Specifically, since the amount of transmitted light is increased by thinning the black matrix, the brightness of the LCD can be obtained. In addition, if the brightness is significantly improved, the power consumption of the backlight of the LCD can be reduced. Furthermore, the sharpness of the image can be improved by thinning the black matrix.

  In order to form a black matrix of a black negative photosensitive material, a matrix-like punched pattern (grid-like pattern) composed of a collection of line-like punched patterns in the X direction and Y direction in a large area light shielding region It is necessary to use a photo mask provided with a transfer pattern in which the removal pattern is formed. However, it is not easy to precisely form a minute-width punched pattern.

  In the case of forming a remaining pattern composed of a linear film pattern in the large-area light transmitting region, the side etching in wet etching is used to form a desired line width. Fine adjustment is possible. However, in the removal pattern, it is necessary to finely determine conditions such as drawing, development, and etching in advance. In addition, even if the line width fluctuates slightly, if the line width itself is fine, there is a disadvantage that the light transmission behavior of light due to the fluctuation is greatly fluctuated.

  In addition, even when a photomask in which line width control is reliably performed is used, there is a further problem in transferring a transfer pattern onto a transfer target.

  In the case of exposure using a transfer pattern having a punched pattern sandwiched between light shielding portions, the light intensity distribution on the transfer-receiving material is, as described above, the light diffraction distribution as the line width of the punched pattern becomes finer. to be influenced. FIG. 4 is a diagram schematically showing the relationship between the line width of the extraction pattern and the light intensity distribution on the subject. In FIG. 4, the transfer pattern is composed of a light shielding portion 103 and a punching pattern 104 sandwiched between the light shielding portions 103.

  FIG. 4A shows the light intensity distribution between C and D when the line width of the extraction pattern 104 is a1. FIG. 4B shows the light intensity distribution between E and F when the line width of the extraction pattern 104 is a2 (a2 <a1). Thus, when the line width of the extraction pattern 104 is a2 <a1, comparing FIG. 4A with FIG. 4B, the peak of the light intensity distribution at the line width a2 shown in FIG. 4B is the line width a1 shown in FIG. Is lower than the peak of the light intensity distribution at. That is, as the line width of the open pattern 104 becomes smaller, the peak of the light intensity distribution is lowered, which causes a problem that it becomes difficult to sufficiently sensitize the photosensitive material on the transfer target.

  The present invention has been made in view of the foregoing points, and it is possible to finely control the line width and the light quantity when transferring a punched pattern with a fine line width onto a transfer target. An object of the present invention is to provide a manufacturing method, a pattern transfer method, and a manufacturing method of a display device.

The photomask according to the present invention is a photomask having a main surface of 300 mm or more on one side provided with a transfer pattern for forming a device pattern with a line width Wp on a transfer target, and the transfer pattern A light shielding region formed by forming at least a light shielding film on a transparent substrate, and a cutout pattern disposed surrounded by the light shielding region, the first cutout pattern having a line width Wm corresponding to the device pattern The relationship between the line width Wp of the device pattern and the line width Wm of the first open pattern satisfies the following equations (1) and (2).
Wp <10 μm (1)
1 ≦ (Wm−Wp) / 2 ≦ 4 (μm) (2)

  According to the photomask, the line width Wm of the cutout pattern in the transfer pattern of the photomask necessary for forming a device pattern of the line width Wp on the transfer target is a predetermined bias amount ((Wm−Wp) Since the adjustment is made to satisfy 1/2 ([mu] m), it is possible to adjust the amount of light reaching the transferred object, and to suppress the CD variation of the device pattern due to the variation of the proximity gap. Therefore, in transferring the punched pattern of the fine line width onto the transfer medium, it becomes possible to finely control the line width and the light quantity.

  In the photomask, the first cutout pattern may be formed of a light transmitting portion formed by exposing the surface of the transparent substrate.

  Further, in the above-mentioned photomask, the first punching pattern may be constituted by a semi-transparent portion formed by forming a semi-transparent film on the transparent substrate.

  Furthermore, in the photomask, the exposure light transmittance of the semitransparent film can be set to 20 to 60%.

  Furthermore, in the photomask, the transfer pattern has a plurality of first punched patterns having a line shape of a line width Wm, and a width (3 × Wm) is provided between the first punched patterns adjacent in the width direction. A portion where the above-mentioned light shielding area intervenes.

  Furthermore, in the photomask, the transfer pattern may further include a second removal pattern of a line width Wn (Wn> Wm), and the second removal pattern may be formed of a light transmitting portion.

  Furthermore, in the above-mentioned photomask, the photomask may be a photomask used for proximity exposure, in which the proximity gap is in the range of 10 to 200 μm.

The method of manufacturing a photomask according to the present invention is a method of manufacturing a photomask including a transfer pattern for forming a device pattern with a line width Wp on a transfer target, and at least a light shielding film is formed on a transparent substrate. Forming a photomask blank on which an optical film is formed, and performing a photolithography process on the optical film, and then performing patterning including wet etching to form the transfer pattern. The transfer pattern is a light shielding area formed by forming at least a light shielding film on the transparent substrate, and a first blanking pattern disposed surrounded by the light shielding area, and the line width Wm corresponding to the device pattern The relationship between the line width Wp of the device pattern and the line width Wm of the first open pattern is as follows: 1) and is characterized in that satisfies the equation (2).
Wp <10 μm (1)
1 ≦ (Wm−Wp) / 2 ≦ 4 (μm) (2)

  The pattern transfer method of the present invention is a pattern transfer method for forming a device pattern of line width Wp on a transfer target by proximity exposure using a photomask provided with a transfer pattern, which is described above. The negative photosensitive material film formed on the transfer target is exposed using a proximity exposure device using the photomask described above or the photomask manufactured by the method of manufacturing a photomask described above It is characterized by

  A method of manufacturing a display device of the present invention is characterized by using the above-mentioned pattern transfer method.

  According to the present invention, control of the line width and the amount of light can be finely performed when the punched pattern of the fine line width is transferred onto the transfer target.

It is a schematic diagram which shows an example of a color filter. It is a schematic diagram which shows the exposure apparatus which performs proximity | contact exposure. It is a figure which illustrates the light intensity distribution by the interference which the transmitted light in near field exposure forms. It is a figure which shows the relationship between the line width of a removal pattern, and the light intensity distribution on a to-be-photographed object. It is a schematic diagram which shows an example of the target object which transferred the 1st device pattern using the photomask which concerns on one embodiment of this invention, and this photomask. It is a schematic diagram which shows an example of the target object which transferred the 1st device pattern using the photomask which concerns on the said embodiment, and this photomask. It is a schematic diagram which shows an example of the to-be-transferred object which transferred the 1st device pattern and the 2nd device pattern using the photomask which concerns on the said embodiment, and this photomask. It is a figure which shows an example of the black matrix manufactured using the photomask which concerns on the said embodiment. It is a figure which shows a part of pixel part of a photomask. It is a figure which shows the relationship between the device pattern formed on a to-be-transferred body, and the shape of the extraction pattern in a photomask. It is a figure which shows the relationship between the device pattern formed on a to-be-transferred body, and the shape of the extraction pattern in a photomask. It is a figure which shows the relationship between the device pattern formed on a to-be-transferred body, and the shape of the extraction pattern in a photomask. It is a figure which shows the relationship between the device pattern formed on a to-be-transferred body, and the shape of the extraction pattern in a photomask. It is a figure explaining the manufacturing method of the 1st photomask concerning the above-mentioned embodiment. It is a figure explaining the manufacturing method of the 2nd photomask concerning the above-mentioned embodiment. It is a figure which shows the model used for the optical simulation in the Example. It is a figure which shows the simulation result of a comparative example. FIG. 6 is a diagram showing simulation results of Example 1; FIG. 7 is a diagram showing simulation results of Example 2; FIG. 16 is a diagram showing simulation results of Example 3; FIG. 16 is a diagram showing simulation results of Example 4; FIG. 16 is a diagram showing simulation results of Example 5;

Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings.
FIG.5 and FIG.6 is a schematic diagram which shows an example of the transfer object which transferred the 1st device pattern using the photomask which concerns on this Embodiment, and this photomask.

  The photomask 10 shown in FIG. 5 has a light shielding region 10b formed by providing a light shielding film on a transparent substrate 10a, and a first cutout pattern 10c having a line width Wm. The light shielding region 10 b and the first removal pattern 10 c constitute a transfer pattern (for example, a pixel pattern). In addition, the first removal pattern 10c is formed of a light transmitting portion in which the surface of the transparent substrate 10a is exposed.

  On the other hand, the photomask 12 shown in FIG. 6 is configured by providing a light shielding film or a light shielding film and a semitransparent film on a transparent substrate 12a, and only a semitransparent film on a transparent substrate 12a and a light shielding region 12b. And the first open pattern 12c with the line width Wm. The light shielding region 12 b and the first removal pattern 12 c constitute a transfer pattern (for example, a pixel pattern).

  In the photomask 12 shown in FIG. 6, a semi-transparent film may be formed on the transparent substrate 12a, and a light shielding film may be stacked on the semi-transparent film to form a light shielding region, or Only the light shielding film may be formed on the transparent substrate to constitute the light shielding region.

  The line width is a so-called critical dimension (CD), which means the line width in the case of a line-like pattern, and the diameter (or the short diameter) in the case of a hole pattern.

  The photomask 10 (12) has a main surface of which one side is 300 mm or more. One side corresponds to one side when the outline of the photomask 10 (12) is square, and corresponds to the short side when the outline of the photomask 10 (12) is rectangular. The photomask according to the present embodiment has the effect of suppressing deterioration in transferability due to in-plane variation of the proximity gap due to deflection or a holding jig or the like for reducing the same. In the case of a large photomask having a side of 300 mm or more, a remarkable effect can be obtained. Note that a larger effect can be obtained with a rectangular photomask having a side of 600 mm or more (sixth generation).

  The first removal pattern 10c (12c) is disposed so as to be surrounded by the light shielding region 10b (12b). In other words, the first removal pattern 10c (12c) is disposed in a state of being sandwiched from at least both sides of the light shielding region 10b (12b). For example, in the case where the first removal pattern 10c (12c) has a line shape having a predetermined width, a light shielding area is disposed adjacent to both sides of the line. Further, in the case where the first removal pattern 10c (12c) is a hole pattern, a light shielding region is disposed surrounding the hole pattern.

  The first device pattern 11 b formed on the transfer target body 11 a such as a color filter substrate has a minute width (Wp <10 μm). The first device pattern 11b may be used, for example, as a black matrix (BM) for color filters, and a photo spacer (PS) used as a black stripe (BS). Specifically, the line width Wp of the first device pattern 11b preferably satisfies 2 μm ≦ Wp <10 μm. When the first device pattern 11b is used as a black matrix or a black stripe, the line width Wp preferably satisfies 3 μm ≦ Wp ≦ 8 μm, and more preferably 4 μm ≦ Wp ≦ 7 μm.

  On the other hand, the line width Wm of the first open pattern 10c (12c) constituting the transfer pattern preferably satisfies 1 ≦ (Wm−Wp) / 2 ≦ 4 (μm). Here, the line width Wm of the first removal pattern 10c (12c) is a width obtained by adding a bias to both sides of the line width Wp of the first device pattern 11b. That is, assuming that the bias is β, 1 ≦ β ≦ 4 (μm) holds. As described above, transfer is performed on the transfer target body 11 a using the first device pattern 11 b having a width that is increased on both sides by β on one side with respect to the line width Wm of the removal pattern 10 c on the photomask 10. It is more preferable to satisfy 1.2Wp ≦ Wm ≦ 3.0Wp. More preferably, the line width Wm of the first open pattern 10c (12c) satisfies 1.4 Wp ≦ Wm ≦ 3.0 Wp.

  As in the case of the photomask 10, in the case where the first removal pattern 10c is formed of a light transmitting portion formed by exposing the surface of the transparent substrate 10a, the line width Wm of the first removal pattern 10c is 1.4 Wp ≦ Wm ≦ 2. It is preferable to satisfy .0 Wp.

  On the other hand, as in the case of the photomask 12, when the first open pattern 12c is composed of a semi-transparent portion formed by forming a semi-transparent film on the transparent substrate 12a, the line width Wm of the first open pattern 12c is It is preferable to satisfy 1.2Wp ≦ Wm ≦ 2.6Wp. It is more preferable that the line width Wm of the first open pattern 12c satisfy 1.0 μm ≦ (Wm−Wp) /2≦3.0 μm, that is, satisfy 1.0 μm ≦ β ≦ 3.0 μm. .

  In the photomask 12, it is preferable that the semi-transparent film is formed not only on the portion corresponding to the first opening pattern 12c but also on the light shielding region portion. That is, it is preferable that the light shielding film and the semitransparent film be stacked in the light shielding region. When the patterned light shielding film and the patterned semi-transparent film are respectively formed on the transparent substrate 12a, the etching process of each film is necessary, and it is not easy to obtain the alignment accuracy sufficiently. It is.

  However, for example, in a region where there is no fine pattern such as a pixel pattern (for example, a peripheral region of a photomask, see FIG. 8), it may be a light transmitting portion where the transparent substrate surface is exposed. The light transmitting film may be removed. Alternatively, the transparent substrate 12a may be exposed without forming the semi-transparent film. Such a region is because the alignment accuracy of the patterning does not have to be as high as in the pixel pattern.

  In the photomask 12, the exposure light transmittance T of the semitransparent film is preferably 20 to 60%. The exposure light transmittance T of the semitransparent film is more preferably 30 to 55%, and further preferably 30 to 50%. When the exposure light transmittance T of the semi-transparent film becomes excessively large, the film thickness of the semi-transparent film becomes small, and a slight fluctuation in film thickness tends to relatively change the transmittance value relatively. It is. On the other hand, when the transmittance of the semi-transparent film is too small, there is a risk that the amount of light passing through the fine first cutout pattern 12c is insufficient.

  The exposure light transmittance T of the semitransparent film indicates the transmittance of the semitransparent portion in which the semitransparent film is formed on the transparent substrate 12a when the exposure light transmittance of the transparent substrate 12a is 100%. . However, it is assumed that the semi-transparent portion has a sufficient width so as not to be affected by the adjacent patterns.

  The exposure light transmittance T is for a representative wavelength in the wavelength range including i-line to g-line used as exposure light, and preferably, the transmittance for all wavelengths of i-line, h-line and g-line is there.

  The transfer pattern provided on the photomask may further have a second removal pattern of line width Wn (Wn> Wm). FIG. 7 is a schematic view showing an example of a photomask having a second removal pattern and a transfer target on which the second device pattern is transferred using the photomask.

  A photomask 14 shown in FIG. 7 has a light shielding region 14b in which a light shielding film is provided on a transparent substrate 14a such as quartz, or a light shielding film and a semitransparent film are laminated, and a first cutout pattern 14c having a line width Wm. And a second open pattern 14d of line width Wn. The light shielding region 14b, the first removal pattern 14c, and the second removal pattern 14d constitute a transfer pattern (for example, a pixel pattern). The first cutout pattern 14c is formed of a semi-transmissive portion formed by forming a semi-transmissive film on the transparent substrate 14a. The second cutout pattern 14d is formed of a light transmitting portion in which the surface of the transparent substrate 14a is exposed.

  The second removal pattern 14d in the photomask 14 is used to form a second device pattern 11c having a line width Wq on the transfer target body 11a. The line width Wn of the second open pattern 14 d is preferably 8 μm ≦ Wn, and more preferably 10 μm ≦ Wn. That is, the second punched pattern 14d has a line width larger than that of the first punched pattern 14c, and the transmitted light amount can be obtained by configuring it as the light transmitting portion rather than using the merit of miniaturization by the semi-light transmitting portion described later. Can be prioritized.

  The transfer pattern in the photomask 10 (12, 14) has a plurality of first punched patterns 10c (12c, 14c) formed in a line shape with a line width Wm, and adjacent first punched patterns 10c (in the width direction) It is preferable to have a portion in which a light shielding area having a width (3 × Wm) or more is interposed between 12c and 14c).

  A light intensity distribution to be described later is formed on the material to be transferred 11a as a result of the interference of the extracted pattern, that is, the diffracted light generated at the edge of the slit and the light generated thereby. The light intensity distribution is preferably a light intensity curve having a single peak at the center, as described later (see FIGS. 17 to 22). More preferably, the light intensity distribution is a bell-shaped peak having a single peak in the center and a monotonous increase or decrease on both sides of the peak, such as a Gaussian distribution. This can be obtained by appropriate selection of the design of the transfer pattern (puncture pattern line width, transmittance) and the exposure conditions (illuminance, collimation angle).

  This is because diffracted light due to the diffractive action of light generated at both edges of the first cutout pattern 10c (12c, 14c) causes complicated interference according to the width of the first cutout pattern 10c (12c, 14c). As a result, the distribution of the light intensity synthesized means that a single peak is formed. The light intensity distribution formed on the transfer receiving body 11a preferably forms a single peak in the region of ± Wp / 2 with respect to the center in the width direction. Moreover, the side peak may exist in the outer side.

  In the case where the distance between adjacent first extraction patterns 10c (12c, 14c) is small, interference between transmitted light mutually occurs in adjacent first extraction patterns 10c (12c, 14c), the transfer object is formed on transferred object 11a. The shape of the light intensity distribution that is produced changes and becomes more complicated. As a result, a single peak is not necessarily drawn, and it is difficult to form a photosensitive material film pattern with high resolution on the transferred object 11a.

  The transfer pattern on the photomask 10 (12, 14) can be for black matrix or black stripe production. FIG. 8 is a view showing an example of a black matrix manufactured using the photomask 10 (12) according to the present embodiment. FIG. 8 shows a black matrix pattern panoramic view of one panel. The black matrix 20 shown in FIG. 8 is composed of a pixel pattern area 20a and a peripheral area 20b. Although the width of the peripheral region 20b is larger than that of the pixel pattern 20a, the dimensional ratio of the other patterns, the area of the pixel pattern, and the arrangement position are appropriately changed depending on the device to be obtained.

FIG. 9 is a view showing a part of a pixel portion of a photomask. FIG. 9A shows a matrix-like photomask for forming the pixel pattern area 20a of the black matrix 20 as shown in FIG. Here, rectangular light shielding regions are arranged in a matrix form at intervals, and a cutout pattern is formed between adjacent light shielding regions. However, the light shielding regions do not necessarily have to be quadrangular, and it may be an aspect in which light shielding regions having a constant shape different from this are regularly arranged. Photomask shown in FIG. 9A, a light-shielding portion 21a, a first open pattern 21b ₁ linear line width Wm, the first open pattern 21b ₁ and intersecting the line width Wn linear in (Wn> Wm) first It has 1 open pattern 21b _2, the.

  On the other hand, FIG. 9B shows a striped photomask for forming a black stripe. The photomask shown in FIG. 9B has a light shielding portion 21a and a linear first cutout pattern 21c with a line width Wm.

  10 to 13 are diagrams showing the relationship between the device pattern formed on the transfer target and the shape of the cutout pattern in the photomask. In FIGS. 10 to 13, the peripheral region of the photomask is not shown, and only the pixel pattern region is shown.

  FIG. 10A shows a black stripe composed of line-shaped device patterns 22 extending in the Y direction. In order to form a device pattern as shown in FIG. 10A, the photomask has a first cutout pattern of a line width Wm in the form of a line extending in the Y direction. The photomask shown in FIG. 10B has a light shielding portion 23a and a first removal pattern 23b formed of a light transmitting portion. The photomask shown in FIG. 10C has a light shielding portion 23a and a first cutout pattern 23c formed of a semi-light transmitting portion.

  FIG. 11A shows a black matrix composed of line-shaped device patterns 24 extending in the X and Y directions orthogonal to each other. In order to form a device pattern as shown in FIG. 11A, the photomask shown in FIG. 11B has a linear first cutout pattern 24b having a line width Wm extending in the X and Y directions. The photomask shown in FIG. 11B has a light shielding portion 24a and a first cutout pattern 24b in the shape of a lattice formed of a semi-transparent portion.

  FIG. 12A shows a black matrix composed of a linear device pattern 25a of line width Wp extending in the Y direction and a linear device pattern 25b of line width Wq (Wq> Wp) extending in the X direction. There is. In order to form a device pattern as shown in FIG. 12A, the photomask shown in FIG. 12B has a linear first cutout pattern 26b having a line width Wm extending in the Y direction and a line width Wn (Wn> extending in the X direction). And Wm) line-shaped second punching patterns 26c. The photomask shown in FIG. 12B has a light shielding portion 26a, and a first open pattern 26b and a second open pattern 26c formed of a semi-transparent portion.

  The line width Wn of the second open pattern 26c preferably satisfies 8 μm ≦ Wn, and more preferably 10 μm ≦ Wn. The upper limit of the line width Wn of the second open pattern 26c is not limited. However, for example, when used as a crossing line as shown in FIG. 12B, it can be configured to satisfy 8 μm ≦ Wn ≦ 30 μm. The relationship between the line width Wn of the second open pattern 26c and the line width Wq of the device pattern 25b preferably satisfies 1.0 ≦ Wn / Wq ≦ 1.5, and 1.0 ≦ Wn / Wq ≦ It is more preferable to satisfy 1.2.

  FIG. 13A shows a black matrix composed of a linear device pattern 27a of line width Wp extending in the Y direction and a linear device pattern 27b of line width Wq (Wq> Wp) extending in the X direction. There is. In order to form a device pattern as shown in FIG. 13A, the photomask shown in FIG. 13B has a linear first cutout pattern 28b having a line width Wm extending in the Y direction and a line width Wn (Wn>) extending in the X direction. And Wm) line-shaped second punching patterns 28c. The photomask shown in FIG. 13B has a light shielding portion 28a, a first open pattern 28b formed of a semi-transparent portion, and a second open pattern 28c formed of a transparent portion.

Subsequently, a method of manufacturing a photomask according to the present embodiment will be described.
FIG. 14 is a diagram for explaining a method of manufacturing a first photomask according to the present embodiment.

  First, as shown in FIG. 14A, a photomask blank 30 in which a light shielding film 32 and a resist film 33 are formed in this order on a transparent substrate 31 is prepared.

  As the transparent substrate 31, for example, a substrate transparent to exposure light such as synthetic quartz, soda lime glass, non-alkali glass or the like can be used.

  As the light shielding film 32, chromium or a compound thereof can be used. For example, the light shielding film 32 can be a chromium nitride film, a chromium carbide film, a chromium carbide oxide film, a chromium oxide film, a chromium oxynitride film, or a laminated film of these.

  Alternatively, metal silicide can be used as the light shielding film 32. For example, molybdenum silicide, tantalum silicide, titanium silicide, tungsten silicide, or oxides, nitrides or oxynitrides of these can be used as the light shielding film 32. The molybdenum silicide film used for the light shielding film 32 may be, for example, a MoxSiy film, a MoSiO film, a MoSiN film, a MoSiON film or the like.

  Subsequently, as shown in FIG. 14B, drawing with a laser or an electron beam is performed on the photomask blank 30 using a drawing device, and the resist film 33 is exposed. This drawing data is for forming a light shielding portion.

  Subsequently, as shown in FIG. 14C, a developing solution is supplied to the resist film 33 and development is performed to form a resist pattern 33a which covers a region where a light shielding portion is to be formed.

  Subsequently, as shown in FIG. 14D, the light shielding film 32 is etched using the resist pattern 33a as a mask to form a light shielding film pattern 32a. Wet etching using a known etchant can be applied to the etching of the light shielding film 32. For example, if the light shielding film 32 contains chromium or a compound thereof, an etchant for chromium (for example, ceric ammonium nitrate and perchloric acid etc.) can be used, and if the light shielding film 32 contains a silicide, A fluorine-based etchant can be used.

  Subsequently, as shown in FIG. 14E, after peeling off the resist pattern 33a, a semi-transparent film 34 is formed on the entire surface of the transparent substrate 31 on which the light shielding film pattern 32a is formed. The semi-translucent film 34 has a desired transmittance and, if necessary, a phase shift amount determined in advance, and is deposited with an appropriate film thickness.

  As the semi-transparent film 34, a film using a chromium compound or metal silicide as a raw material can be used. For example, as a chromium compound film used as the semi-transparent film 34, a chromium nitride film, a chromium carbide film, a chromium carbide oxide film, a chromium oxide film, a chromium oxynitride film, and the like can be given.

  In addition, as a metal silicide film used as the semitransparent film 34, a molybdenum silicide film, a tantalum silicide film, a titanium silicide film, a tungsten silicide film, an oxide film, a nitride film, an oxynitride film or the like thereof can be mentioned. . In addition, the molybdenum silicide film used for the semi-transparent film 34 may be, for example, a MoxSiy film, a MoSiO film, a MoSiN film, a MoSiON film, or the like.

  When the etching selectivity of the semi-light transmitting film 34 and the light shielding film 32 is required depending on the method of manufacturing the photomask, it is preferable to use a combination of a chromium film and a silicide film.

  In the step shown in FIG. 14E, the transfer pattern of the photomask shown in FIGS. 10B, 10C and 11B can be formed. That is, it is a light transmitting portion with a line width Wm (1 ≦ (Wm−Wp) / 2 ≦ 4 (μm)) for forming a device pattern 22 (24) of Wp (Wp <10 μm) on a transfer target. A photomask having a first punched pattern 23b, or a first punched pattern 23c (24b) comprising a semi-transparent portion with a line width Wm (1 ≦ (Wm−Wp) / 2 ≦ 4 (μm)) Can be manufactured by the above process.

  On the other hand, when the transfer pattern has a device pattern with a line width Wn (Wn> Wm) as in the transfer pattern of the photomask shown in FIGS. 12B and 13B, the following steps are further performed.

  As shown in FIG. 14F, a resist film 35 is formed on the entire surface of the photomask blank 30a having the light shielding film pattern 32a and the exposed semi-transparent film 34. Then, drawing with a laser or an electron beam is performed on the photomask blank 30a on which the resist film 35 is formed using a drawing apparatus, and the resist film 35 is exposed. This drawing data is for forming a light transmitting portion.

  Subsequently, as shown in FIG. 14G, a developing solution is supplied to the resist film 35 and development is performed to form a resist pattern 35a which covers areas other than the area where the light transmitting portion is to be formed.

  Subsequently, as shown in FIG. 14H, the semi-translucent film 34 is etched using the resist pattern 35a as a mask to form a semi-translucent film pattern 34a.

  Finally, as shown in FIG. 14I, by removing the resist pattern 35a, in addition to the removal pattern of the line width Wm, the removal pattern of the line width Wn (Wn> Wm) formed of the light transmitting portion Can be manufactured.

  The first photomask manufacturing method shown in FIG. 14 is an example using an etching selectivity between the semi-transparent film 34 and the light shielding film 32. However, when there is no etching selectivity between the semi-transparent film 34 and the light shielding film 32, that is, the resistance of the other film to the etchant of either one of the semi-transparent film 34 and the light shielding film 32 is Even if it is low, the first photomask manufacturing method can be applied. In this case, it is necessary to take into consideration that the pattern dimension may be affected depending on the alignment deviation of the two writing processes.

The transmittance of the semitransparent film 34 is preferably 20 to 60%. Also, for example, as in the case of the photomask shown in FIG. 13B, when the transfer pattern has a light shielding portion, a semi-light transmitting portion, and a light transmitting portion, the light transmitting portion may be adjacent to the semi light transmitting portion. obtain. In this case, depending on the selected semi-transparent film 34, interference may occur due to the phase difference of the transmitted light at the boundary with the light transmitting part, and an unintended dark part may be formed. For this reason, the material and film thickness of the semi- transparent film 34 are selected so that the phase difference of transmitted light is 90 degrees or less, more preferably 60 degrees or less, between adjacent light transmitting parts and semi-light transmitting parts. It is preferable to do.

  Subsequently, a method of manufacturing a photomask, which is different from the method of manufacturing the first photomask, will be described. FIG. 15 is a diagram for explaining a method of manufacturing a second photomask according to the present embodiment.

  First, as shown in FIG. 15A, a photomask blank 40 in which a semi-translucent film 42, a light shielding film 43, and a resist film 44 are formed in this order on a transparent substrate 41 is prepared. As described above, the second photomask manufacturing method is different from the first photomask manufacturing method in that the semitransparent film 42 is formed on the transparent substrate 41.

  Subsequently, as shown in FIG. 15B, drawing with a laser or an electron beam is performed on the photomask blank 40 using a drawing apparatus, and the resist film 44 is exposed. This drawing data is for forming a light shielding portion.

  Subsequently, as shown in FIG. 15C, a developing solution is supplied to the resist film 44 and development is performed to form a resist pattern 44a that covers a region where a light shielding portion is to be formed.

  Subsequently, as shown in FIG. 15D, the light shielding film 43 is etched using the resist pattern 44a as a mask to form a light shielding film pattern 43a.

  Subsequently, as shown in FIG. 15E, the resist pattern 44a is peeled off.

  Furthermore, when the transfer pattern has a device pattern with a line width Wn (Wn> Wm), the following steps are performed.

  As shown in FIG. 15F, a resist film 45 is formed on the entire surface of the photomask blank 40a having the semitransparent film 42 and the light shielding film pattern 43a. Then, drawing with a laser or an electron beam is performed on the photomask blank 40 a on which the resist film 45 is formed using a drawing apparatus, and the resist film 45 is exposed. This drawing data is for forming a light transmitting portion.

  Subsequently, as shown in FIG. 15G, a developing solution is supplied to the resist film 45 and development is performed to form a resist pattern 45a which covers areas other than the area where the light transmitting portion is to be formed.

  Subsequently, as shown in FIG. 15H, the semitransparent film 42 is etched using the resist pattern 45a as a mask to form a semitransparent film pattern 42a.

  Lastly, as shown in FIG. 15I, the resist pattern 45a is peeled off, so that in addition to the removal pattern of the line width Wm, the removal pattern of the line width Wn (Wn> Wm) formed of the light transmitting portion Can be manufactured.

  In the second method for manufacturing a photomask shown in FIG. 15, materials having etching selectivity to each other are used between the semi-transparent film 42 and the light shielding film 43. In addition, the film thickness of the semi-transparent film 42 needs to be determined in advance in accordance with the transmittance to be obtained.

  Subsequently, a pattern transfer method using the photomask according to the present embodiment will be described.

  The pattern transfer method according to the present embodiment uses a photomask provided with a transfer pattern to expose a negative photosensitive material film formed on a transfer target using a proximity exposure device, A first device pattern of line width Wp is formed on the transfer body. For example, such a pattern transfer method can be used to manufacture a black matrix in a display device.

At this time, a light shielding region in which at least a light shielding film is formed on a transparent substrate, and a cutout pattern which is disposed so as to be surrounded by the light shielding region, and which corresponds to a device pattern, a first cutout pattern of a line width Wm; In a pattern transfer method for forming a device pattern of a line width Wp on a transfer target using a photomask having a main surface of 300 mm or more on one side, the device pattern has a line width Wp of the device pattern and a transfer pattern having a transfer pattern of The pattern can be transferred by a transfer method of performing transfer by applying appropriate exposure conditions such that the relationship with the line width Wm of the first cutout pattern satisfies the following formulas (1) and (2) .
Wp <10 μm (1)
1 ≦ (Wm−Wp) / 2 ≦ 4 (μm) (2)

  The photomask according to the present embodiment is preferably used for proximity exposure in which the proximity gap is in the range of 10 to 200 μm. The proximity gap is more preferably in the range of 30 to 150 μm, and further preferably in the range of 60 to 150 μm. In addition, even if the proximity gap differs depending on the in-plane position of the material to be transferred, that is, even when there is in-plane variation, it is preferable that the proximity gap is within the above range at any position in the plane. .

  Here, when the distribution of the proximity gap in the plane, that is, the difference between the maximum value and the minimum value of the proximity gap is in the range of 30 μm to 100 μm, the effect of the present invention becomes remarkable. That is, the photomask according to the present embodiment is useful in a system in which the distribution of the proximity gap in the plane is uneven.

  When designing the transfer pattern of the photomask according to the present embodiment, when the device pattern is transferred onto the transfer target, the variation in the light intensity of the exposure light due to this is suppressed even in the presence of the proximity gap. Preferably, the in-plane CD distribution is such that the target CD ± 10% or the CD variation is 1 μm or less.

  For example, referring to FIG. 20, when the proximity gap is varied from 70 μm to 130 μm and the distribution of the proximity gap is 60 μm (see FIG. 20A), the CD variation is suppressed to 0.9 μm or less (see FIG. 20). See FIG. 20B). In FIG. 21B, the CD variation is 0.8 μm or less, and in FIG. 22B, the CD variation is 0.7 μm or less (however, the CD due to the light intensity distribution).

(Example)
In order to confirm the transferability by the photomask according to the embodiment of the present invention, an optical simulation was performed using a model shown in FIG.

  FIG. 16A shows a photomask (binary mask) 50 having a light transmitting portion. The photomask 50 has a light shielding portion 50 a and a cutout pattern 50 b formed of a light transmitting portion with a line width Wm. Further, FIG. 16B shows a photomask (halftone mask) 51 having a semi-transmissive portion. The photomask 51 has a light shielding portion 51 a and a cutout pattern 51 b formed of a semi-transparent portion with a line width Wm.

(Comparative example)
In the photomask 50 shown in FIG. 16A, the line width Wp of the device pattern to be formed on the transfer target is 5 μm, and the line width Wm of the punched pattern 50b in the photomask 50 is 5 μm, that is, the bias β is zero. In some cases, the proximity gap was varied to determine the peak of CD variation and light intensity. Here, the case of a proximity gap of 100 μm was normalized to investigate the case where a target CD was obtained at this value.

  FIG. 17A is a graph showing a light intensity distribution formed on a transferee. In FIG. 17A, the horizontal axis represents the position on the mask, and the vertical axis represents the light intensity. The proximity gap was varied by 5 μm between 70 μm and 130 μm. In FIG. 17A, a graph 170a shows a graph of the proximity gap 70 μm, a graph 170b shows a graph of the proximity gap 130 μm, and a graph 170c shows a graph of the proximity gap 100 μm.

  FIG. 17B is a graph showing the relationship between the proximity gap and the CD to be formed. In FIG. 17B, the horizontal axis represents the proximity gap, and the vertical axis represents the CD (μm). FIG. 17C is a graph showing the relationship between the proximity gap and the light intensity of the peak. In FIG. 17C, the horizontal axis represents the proximity gap, and the vertical axis represents the light intensity.

  As shown in FIG. 17B, when the proximity gap fluctuates from 70 μm to 130 μm, that is, while it fluctuates by 60 μm, a CD fluctuation of about 2.3 μm occurs. Further, as shown in FIG. 17C, when the proximity gap fluctuates from 70 μm to 130 μm, that is, at a fluctuation of 60 μm, a light intensity fluctuation of a peak of 0.35 units (relative value) occurs.

Example 1
In the photomask 50 shown in FIG. 16A, the line width Wm of the cutout pattern 50b in the photomask 50 is 6 μm, while the line width Wp of the device pattern to be formed on the transfer target is 5 μm as in the case of the comparative example. A similar simulation was performed with 7 μm. That is, values of the bias β are 0.5 μm and 1.0 μm, respectively, and Wm / Wp is 1.2 and 1.4, respectively.

  The simulation results are shown in FIG. FIG. 18A is a graph showing the relationship between the proximity gap and the CD. In FIG. 18A, the horizontal axis represents the proximity gap, and the vertical axis represents the CD (μm). FIG. 18B is a graph showing the relationship between the proximity gap and the light intensity of the peak. In FIG. 18B, the horizontal axis represents the proximity gap, and the vertical axis represents the light intensity.

  18A and 18B, the graph 180a shows a graph in which the line width Wm of the cutout pattern 50b is 5 μm, the graph 180b shows a graph in which the line width Wm of the cutout pattern 50b is 6 μm, and the graph 180c shows the line width of the cutout pattern 50b. The graph shows that Wm is 7 μm.

  As shown in FIG. 18A, in the graphs 180 b and 180 c, a CD fluctuation of about 1 μm occurred. As shown in FIG. 18B, the larger the value of the bias β, the larger the light intensity of the peak in the same proximity gap. In particular, in the graph 180c in which the line width Wm is 7 μm, the light intensity of the peak increases significantly as compared with the comparative example indicated by the graph 180a. The increase in light intensity is advantageous in that the crosslinking reaction of the negative photosensitive material is sufficiently generated.

(Example 2)
The difference from the photomask 50 in the case of using the photomask 51 shown in FIG. 16B was examined.

  FIG. 19 is a graph showing the light intensity distribution formed on the transfer target. In FIG. 19, the horizontal axis indicates the position on the mask, and the vertical axis indicates the light intensity. In FIG. 19, a graph 190a shows a comparative example, and a graph 190b is a photomask 51 shown in FIG. 16B. The line width Wp of the device pattern to be formed on the transfer target is 5 μm, and the line of the removal pattern 51b in the photomask 51 is The graph shows a case where the width Wm is 8 μm and the transmittance of the semi-transparent film forming the removal pattern 51 b is 55%. By doing this, the peak intensities of the light intensity distributions of the graph 190a showing the comparative example and the graph 190b are made to be the same.

  As shown in FIG. 19, in the present example (graph 190 b) using a halftone mask, the peak shape is sharper than that of the binary mask (graph 190 a) in obtaining the same peak intensity. That is, not only a finer pattern could be formed, but also the inclination angle of the light intensity became large and close to perpendicular. This means that, when actually used for transfer, the cross-sectional shape of the obtained resist pattern approaches vertical, and has an excellent effect that the processing accuracy in the later steps is increased. That is, it is understood that it contributes to the stability of the performance in the intermediate product such as the color filter and the final product such as the display device and the improvement of the yield.

(Example 3)
Based on the result of Example 2, in the photomask 51 shown in FIG. 16B, the line width Wp of the device pattern to be formed on the transfer target is 5 μm, and the line width Wm of the punched pattern 50b in the photomask 51 is 7 μm, When the transmittance of the light transmitting film was 55%, the proximity gap was varied to determine the peak of the CD variation and the light intensity. Here, the case of a proximity gap of 100 μm was normalized to investigate the case where a target CD was obtained at this value.

  FIG. 20A is a graph showing a light intensity distribution formed on a transferee. In FIG. 20A, the horizontal axis represents the position on the mask, and the vertical axis represents the light intensity. The proximity gap was varied by 5 μm between 70 μm and 130 μm. In FIG. 20A, a graph 200a shows a graph of the proximity gap 70 μm, a graph 200b shows a graph of the proximity gap 130 μm, and a graph 200c shows a graph of the proximity gap 100 μm.

  FIG. 20B is a graph showing the relationship between the proximity gap and the CD to be formed. In FIG. 20B, the horizontal axis represents the proximity gap, and the vertical axis represents the CD (μm). FIG. 20C is a graph showing the relationship between the proximity gap and the light intensity of the peak. In FIG. 20C, the horizontal axis represents the proximity gap, and the vertical axis represents the light intensity.

  As shown in FIG. 20B, the CD variation was less than 1 μm when the proximity gap varied from 70 μm to 130 μm, that is, while the 60 μm variation occurred. In addition, as shown in FIG. 20C, when the proximity gap fluctuates from 70 μm to 130 μm, that is, with a fluctuation of 60 μm, a light intensity fluctuation of a peak of 0.25 unit (relative value) occurs.

(Example 4)
A simulation similar to that of Example 3 was performed, with the line width Wm of the punched pattern 50 b in the photomask 51 set to 8 μm.

  FIG. 21A is a graph showing a light intensity distribution formed on a transferee. In FIG. 21A, the horizontal axis represents the position on the mask, and the vertical axis represents the light intensity. The proximity gap was varied by 5 μm between 70 μm and 130 μm. In FIG. 21A, a graph 210a shows a graph of the proximity gap 70 μm, a graph 210b shows a graph of the proximity gap 130 μm, and a graph 210c shows a graph of the proximity gap 100 μm.

  FIG. 21B is a graph showing the relationship between the proximity gap and the CD of the formed pattern. In FIG. 21B, the horizontal axis represents the proximity gap, and the vertical axis represents the CD (μm). FIG. 21C is a graph showing the relationship between the proximity gap and the light intensity of the peak. In FIG. 21C, the horizontal axis represents the proximity gap, and the vertical axis represents the light intensity.

  As shown in FIG. 21B, when the proximity gap was varied from 70 μm to 130 μm, ie, while it was varied by 60 μm, the CD variation was further reduced to less than 0.8 μm. Further, as shown in FIG. 21C, the light intensity of the peak was increased as compared to Example 3.

(Example 5)
A simulation similar to that of Example 3 was performed, with the line width Wm of the punched pattern 50b in the photomask 51 set to 9 μm.

  FIG. 22A is a graph showing a light intensity distribution formed on a transferee. In FIG. 22A, the horizontal axis represents the position on the mask, and the vertical axis represents the light intensity. The proximity gap was varied by 5 μm between 70 μm and 130 μm. In FIG. 22A, a graph 220a shows a graph of the proximity gap 70 μm, a graph 220b shows a graph of the proximity gap 130 μm, and a graph 220c shows a graph of the proximity gap 100 μm.

  FIG. 22B is a graph showing the relationship between the proximity gap and the CD to be formed. In FIG. 22B, the horizontal axis represents the proximity gap, and the vertical axis represents the CD (μm). FIG. 22C is a graph showing the relationship between the proximity gap and the light intensity of the peak. In FIG. 22C, the horizontal axis represents the proximity gap, and the vertical axis represents the light intensity.

  As shown in FIG. 22B, when the proximity gap was varied from 70 μm to 130 μm, ie, while it was varied by 60 μm, the CD variation was further reduced to less than 0.7 μm. In addition, as shown in FIG. 22C, the light intensity of the peak was increased as compared to Example 4.

  From the above, it was found that the light amount reaching the transferred object can be adjusted by setting the punched pattern of the photomask necessary for forming the pattern of the minute width on the transferred object to a line width larger than this. . In addition, it was found that by adjusting the bias amount (β), and more preferably adjusting the bias ratio Wm / Wp, it is possible to effectively suppress the CD variation of the transfer pattern with respect to the proximity gap variation. This point is particularly significant in mass production.

  This effect is due to the use of a pattern with a line width larger than the target line width formed on the transfer target as the cutout pattern of the photomask to reduce the change in light intensity due to the proximity exposure gap. Further, by using a semi-transparent film as the cutout pattern of the photomask, the light intensity to be transmitted is appropriately adjusted and exposed, thereby exerting the effect of suppressing the line width variation due to the exposure gap.

  According to the present invention, it is possible to form a pattern of the above-mentioned fine width without relying on a technique such as a so-called projection exposure apparatus for semiconductor manufacture or a phase shift mask.

  The present invention is not limited to the above embodiment, and can be implemented with various modifications. In the above embodiment, the size, shape, and the like shown in the attached drawings are not limited to the above, and various modifications can be made as long as the effects of the present invention are exhibited. In addition, various modifications can be made without departing from the scope of the object of the present invention.

  For example, the present invention is not limited to the black matrix or the black stripe, and may be applied to a photo spacer (PS) of a liquid crystal display device or the like. In this case, the punched pattern in the above embodiment has a different shape such as a hole pattern, for example, but the effects of the present invention are not impaired.

10, 12, 14 Photomasks 10a, 12a, 14a Transparent substrates 10b, 12b, 14b Light-shielded regions 10c, 12c, 14c First cut patterns 14d Second cut patterns 11a Transferred bodies 11b First device patterns 11c Second device patterns 110 Exposure apparatus 111 Light source 112 Elliptical mirror 113 Integrator 114 Collimation lens

Claims (21)

A photomask for manufacturing a display device, having a main surface of 300 mm or more on one side, provided with a transfer pattern for forming a device pattern of line width Wp by proximity exposure on a transfer target,
The transfer pattern is
A light shielding area formed by forming at least a light shielding film on a transparent substrate;
And a first extraction pattern having a line width Wm corresponding to the device pattern, the extraction pattern being interposed between the light shielding regions.
The first blanking pattern comprises a semi-transparent portion in which a semi-transparent film is formed on the transparent substrate,
The exposure light transmittance of the semi-transparent film is 20 to 60%, and
A photomask characterized in that the relationship between the line width Wp of the device pattern and the line width Wm of the first open pattern satisfies the following formulas (1) and (3).
Wp ≦ 8 μm (1)
1.0 ≦ (Wm−Wp) /2≦3.0 (μm) (3)   The transfer pattern has a plurality of first punching patterns having a line shape with a line width Wm, and the light shielding region having a width (3 × Wm) or more is interposed between the first punching patterns adjacent in the width direction. The photomask according to claim 1, characterized in that   The photomask according to claim 1, wherein the transfer pattern further has a light transmitting portion.   The transfer pattern further includes a second open pattern having a line width Wn (Wn> Wm), and the second open pattern is formed of a light transmitting portion. The photomask in any one of 3.   The photomask according to claim 4, wherein 10 μm ≦ Wn. A phase difference between transmitted light between the semi-transparent portion and the transparent portion is 90 degrees or less.
The photomask according to any one of claims 3 to 5 . A phase difference between transmitted light between the semi-transparent portion and the transparent portion is 60 degrees or less.
The photomask according to any one of claims 3 to 5 . The photomask according to any one of claims 1 to 7 , wherein the light shielding region is formed by laminating the semi-transparent film and the light shielding film in this order on the transparent substrate. The photomask according to any one of claims 1 to 8 , wherein the photomask is a photomask used for proximity exposure, in which a proximity gap is in a range of 10 to 200 m. The photomask according to any one of claims 1 to 9 , wherein the transfer pattern is for producing a black matrix or a black stripe. The photomask according to any one of claims 1 to 10 , wherein the transfer pattern is for manufacturing a color filter. The photomask according to claim 10 , wherein the line width Wp of the device pattern satisfies 3 μm ≦ Wp ≦ 8 μm. The photomask according to claim 12 , wherein the line width Wp of the device pattern satisfies 4 μm ≦ Wp ≦ 7 μm.   The photomask of claim 1, wherein the transfer pattern is for manufacturing a photo spacer. The photomask according to any one of claims 1 to 13 , wherein in the transfer pattern, light shielding regions having a predetermined shape are regularly arranged. The photomask according to any one of claims 1 to 15 , wherein the transfer pattern is a pattern to be applied to exposure to a negative photosensitive material. A method of manufacturing a photomask for manufacturing a display device, comprising a transfer pattern for forming a device pattern of a line width Wp by proximity exposure on a material to be transferred,
A photomask blank on which an optical film including at least a light shielding film is formed is formed on a transparent substrate, and the optical film is subjected to a photolithography process, and then patterning including wet etching is performed to perform the transfer. Including the steps of forming a pattern,
The transfer pattern is
A light shielding area formed by forming at least a light shielding film on the transparent substrate;
It is a first punching pattern disposed so as to be sandwiched between the light shielding regions, and has a punching pattern of a line width Wm corresponding to the device pattern,
The first blanking pattern comprises a semi-transparent portion in which a semi-transparent film is formed on the transparent substrate,
The exposure light transmittance of the semi-transparent film is 20 to 60%, and
A method of manufacturing a photomask, wherein a relationship between a line width Wp of the device pattern and a line width Wm of the first cutout pattern satisfies the following formulas (1) and (3).
Wp ≦ 8 μm (1)
1.0 ≦ (Wm−Wp) /2≦3.0 (μm) (3) A pattern transfer method for forming a device pattern of a line width Wp on a transfer target by proximity exposure using a photomask provided with a transfer pattern,
The negative photosensitive material formed on the said to-be-transferred body using the photomask manufactured by the manufacturing method of the photomask according to any one of claims 1 to 16 or the photomask according to claim 17. A pattern transfer method comprising exposing a film using a proximity exposure apparatus. A method of manufacturing a color filter, comprising using the pattern transfer method according to claim 18 . A method for producing a black matrix or a black stripe, characterized by using the pattern transfer method according to claim 18 . A method of manufacturing a display device, comprising using the pattern transfer method according to claim 18 .

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