JP6526382B2 - Coil parts - Google Patents
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- JP6526382B2 JP6526382B2 JP2014012753A JP2014012753A JP6526382B2 JP 6526382 B2 JP6526382 B2 JP 6526382B2 JP 2014012753 A JP2014012753 A JP 2014012753A JP 2014012753 A JP2014012753 A JP 2014012753A JP 6526382 B2 JP6526382 B2 JP 6526382B2
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Description
本発明は、コイル部品、特に、電気機器等に内蔵される回路基板上に表面実装し得る電子部品としてのコイル部品に関する。 The present invention relates to a coil component, and more particularly to a coil component as an electronic component that can be surface mounted on a circuit board incorporated in an electric device or the like.
従来より、電子機器等にはコイル部品が搭載されており、特に携帯機器で使われるコイル部品はチップ形状を呈し、携帯機器などに内蔵される回路基板上に表面実装される。従来技術の例として、特許文献１では、硬化物からなる絶縁性樹脂の中に、少なくともその一端が外部電極に接続された螺旋状の導体が内蔵され、前記導体の螺旋の方向が実装した基板面と平行になるように形成したチップコイルが提案されている。特許文献１のチップコイルは電子機器の基板に実装した時に、コイルのＱ値（Quality factor)が低下しにくく、インダクタンスが変化しにくいとされている。 2. Description of the Related Art Conventionally, coil components are mounted on electronic devices and the like, and in particular, coil components used in portable devices have a chip shape and are surface mounted on a circuit board built in the mobile devices and the like. As an example of prior art, in Patent Document 1, a substrate in which a helical conductor having at least one end connected to an external electrode is embedded in an insulating resin made of a cured product, and the direction of the spiral of the conductor is mounted A chip coil formed to be parallel to the surface has been proposed. When the chip coil of Patent Document 1 is mounted on a substrate of an electronic device, the Q factor (Quality factor) of the coil is less likely to decrease, and the inductance is considered to be less likely to change.
近時、電子機器は小型化・高性能化が要求され、それに伴って、コイル部品についても小型化が求められている。そのような要求をかんがみて、本発明は、小型化、インダクタンス特性の向上、低Ｒｄｃ化、外部電極との接続安定性の向上の諸要求に対応し得る、コイル部品の提供を課題とする。 In recent years, electronic devices have been required to be smaller in size and higher in performance, and accordingly, coil components have also been required to be smaller. In view of such a demand, the present invention has an object to provide a coil component which can meet various demands for miniaturization, improvement of inductance characteristics, reduction of Rdc, and improvement of connection stability with an external electrode.
本発明者らが鋭意検討した結果、内部電極の新たな形成方法を見出して、以下を特徴とする本発明を完成した。
（１）樹脂からなる絶縁体と、前記絶縁体内に設けられたコイル状の内部導体と、前記内部導体と電気的に接続されている外部電極と、を備えるコイル部品であって、樹脂層からなる第１層と、第１層の上に、樹脂層と少なくとも１つの帯状導体とからなる第２層と、第２層の上に、樹脂層と少なくとも２つのビア状導体とからなる第３層と、第３層の上に、樹脂層と少なくとも１つの帯状導体と少なくとも２つのビア状導体とからなる第４層と、第４層の上に、樹脂層と少なくとも２つの柱状導体とからなる第５層と、第５層の上に、外部電極とを有し、前記第１〜５層の樹脂層が一体となって絶縁体を構成し、前記第２〜５層の帯状導体及び柱状導体がコイル状の内部導体を構成し、第４層の柱状導体が前記外部電極に接続している、コイル部品。
（２）第４層の帯状導体の面積は第４層のビア状導体の面積より大きい（１）のコイル部品。
（３）前記第４層のビア状導体の面積は５０μｍ２〜３２０μｍ２である（１）コイル部品。
（４）前記第４層の帯状導体のうち最大の面積は第４のビア状導体のうち最小の面積の１倍より大きく１００倍以下である（３）のコイル部品。
（５）前記第４層のビア状導体の面積は２０μｍ２〜８０μｍ２である（１）のコイル部品。
（６）前記第４層の帯状導体のうち最大の面積は第４層のビア状導体のうち最小の面積の１倍より大きく５０倍以下である（５）のコイル部品。
（７）前記第２層及び第４層の帯状導体、第５層の柱状導体、第３層及び第４層のビア状導体、及び外部電極はフォトリソグラフィを用いて形成されたものである（１）〜（６）のコイル部品。
（８）外部電極は第５層の上にシード層を形成し、シード層の上にめっきにより形成される（１）または（７）のコイル部品。
（９）前記絶縁体は、長さＬ、幅Ｗ、高さＨの直方体状であり、前記Ｌ、Ｗ、ＨについてはＬ＞Ｈ≧Ｗなる関係が成立し、前記Ｌは０．２〜０．４ｍｍであり、前記Ｗは０．１〜０．２ｍｍであり、前記Ｈは０．１〜０．３５ｍｍである（４）、（６）または（７）のコイル部品。
As a result of intensive studies conducted by the present inventors, the present inventors have found a new method of forming an internal electrode and completed the present invention characterized by the following.
(1) A coil component comprising an insulator made of resin, a coil-shaped inner conductor provided in the insulator, and an external electrode electrically connected to the inner conductor, from the resin layer A second layer comprising a resin layer and at least one strip conductor on the first layer, and a third layer comprising a resin layer and at least two via-like conductors on the second layer A fourth layer comprising a resin layer, at least one strip conductor and at least two via-like conductors on the third layer, and a resin layer and at least two columnar conductors on the fourth layer And an outer electrode on the fifth layer, and the resin layers of the first to fifth layers integrally constitute an insulator, and the strip conductors of the second to fifth layers and The columnar conductor constitutes a coiled inner conductor, and the fourth layer columnar conductor is connected to the external electrode. Le parts.
(2) The coil component of (1), wherein the area of the strip conductor of the fourth layer is larger than the area of the via-like conductor of the fourth layer.
(3) the area of the via conductor of the fourth layer is 50μm 2 ~320μm 2 (1) coil component.
(4) The coil component according to (3), wherein the largest area of the strip conductors of the fourth layer is greater than one and not more than 100 times the smallest area of the fourth via conductor.
(5) a coil component of the area of the via conductor of the fourth layer is 20μm 2 ~80μm 2 (1).
(6) The coil component according to (5), wherein the largest area of the strip conductors of the fourth layer is greater than 1 and not more than 50 times the smallest area of the via conductors of the fourth layer.
(7) The strip conductors of the second and fourth layers, the columnar conductors of the fifth layer, the via-like conductors of the third and fourth layers, and the external electrodes are formed using photolithography ((7) 1) to (6) coil parts.
(8) The coil component of (1) or (7), wherein the external electrode has a seed layer formed on the fifth layer, and is formed on the seed layer by plating.
(9) The insulator is a rectangular parallelepiped having a length L, a width W, and a height H, and for L, W, and H, a relationship of L> H ≧ W is established, and the L is 0.2 to 0.2. The coil component of (4), (6) or (7), which is 0.4 mm, the W is 0.1 to 0.2 mm, and the H is 0.1 to 0.35 mm.
本発明によれば、コイル部品の構造として、各層に形成する導体の配置に特徴があるため、周回効率の最大化（１ｔ周回）およびコイルの最大化（絶縁体の体積を最大活用）を通じてインダクタンス特性の向上が期待される。また、柱状導体引出しによりコイル周回に影響せず導体断面積を確保でき、低Ｒｄｃ化と外部電極との接続安定性が可能となる。好適態様によれば、部品が、いわゆる０４０２サイズ（０．４ｍｍ×０．２ｍｍ×０．２ｍｍ）や０２０１サイズ（０．２ｍｍ×０．１ｍｍ×０．１ｍｍ）といった小さなコイル部品であっても、柱状導体の断面積を確保でき、低Ｒｄｃ化が期待される。また、柱状のテーパを最小限にでき、部分的な断面積の変化や材料密度の変化はほとんどなく、安定した導体が得られる。 According to the present invention, the structure of the coil component is characterized by the arrangement of the conductor formed in each layer, and therefore, the inductance through maximization of circulation efficiency (1t circulation) and maximization of coil (maximum utilization of volume of insulator) Improvement of the characteristics is expected. In addition, the conductor cross-sectional area can be secured without affecting the coil winding by the columnar conductor drawing, and the connection stability with the reduction of Rdc and the external electrode becomes possible. According to a preferred embodiment, even if the part is a small coil part such as so-called 0402 size (0.4 mm × 0.2 mm × 0.2 mm) or 0201 size (0.2 mm × 0.1 mm × 0.1 mm), The cross-sectional area of the columnar conductor can be secured, and reduction in Rdc is expected. In addition, it is possible to minimize the columnar taper and to obtain a stable conductor with little change in partial cross-sectional area and change in material density.
図面を適宜参照しながら本発明を詳述する。但し、本発明は図示された態様に限定されるわけでなく、また、図面においては発明の特徴的な部分を強調して表現することがあるので、図面各部において縮尺の正確性は必ずしも担保されていない。 The present invention will be described in detail with reference to the drawings as appropriate. However, the present invention is not limited to the illustrated embodiment, and because the characteristic parts of the invention may be emphasized and expressed in the drawings, the scale accuracy may not necessarily be guaranteed in each part of the drawings. Not.
図１は本発明のコイル部品の模式透視斜視図である。本発明で製造されるコイル部品１は絶縁体１０とコイル状の内部導体（以下、「コイル部」とも呼ぶ。）２１、２２、３０、４０と外部電極５１、５２とを備える。コイル部２１、２２、３０、４０は絶縁体１０の内部に設けられる。外部電極５１は絶縁体１０の外側に設けられ、コイル部２１、２２、３０、４０と電気的に接続している。コイル部４０は第３層のビア状導体と第４層のビア状導体と引出し部でもある第５層の柱状導体により形成される。 FIG. 1 is a schematic perspective view of a coil component of the present invention. The coil component 1 manufactured according to the present invention includes the insulator 10, a coil-shaped internal conductor (hereinafter also referred to as "coil portion") 21, 22, 30, 40 and external electrodes 51, 52. The coil portions 21, 22, 30, 40 are provided inside the insulator 10. The external electrode 51 is provided on the outside of the insulator 10 and is electrically connected to the coil portions 21, 22, 30 and 40. The coil portion 40 is formed of the via-like conductor of the third layer, the via-like conductor of the fourth layer, and the columnar conductor of the fifth layer which is also a lead-out portion.
絶縁体１０は樹脂からなり、この樹脂は熱、光、化学反応等により硬化したものが好ましく用いられ、具体例として、ポリイミド、エポキシ樹脂、液晶性ポリマーなどが非限定的に挙げられる。また、樹脂中に無機物を含んでもよい。無機物としてはシリカ粉末などを用いることで、絶縁体の強度を高くし、帯電を少なくできる。 The insulator 10 is made of a resin, which is preferably cured by heat, light, a chemical reaction or the like, and specific examples thereof include, but not limited to, polyimide, epoxy resin and liquid crystalline polymer. In addition, inorganic substances may be contained in the resin. By using silica powder or the like as the inorganic substance, the strength of the insulator can be increased and charging can be reduced.
絶縁体は長さＬ、幅Ｗ、高さＨの直方体状である。図１には方向性の説明のために、長さＬ、幅Ｗ、高さＨの方向を矢印で示している。ここで、Ｌ、Ｗ、ＨについてはＬ＞Ｈ≧Ｗの関係が成立する。すなわち、最も長い辺の長さを直方体の長さＬであると定義する。幅Ｗと高さＨが同一の長さである場合は、幅Ｗと高さＨの特定は任意であるが、本発明では、高さ方向に垂直な面に外部電極が形成されるものとして、幅Ｗと高さＨとを定義する。後述するように、本発明では、図１における紙面上側から順に高さ方向Ｈを紙面下方に向かって順々に層を形成することにより、コイル部品１が製造される。なお、前記「高さ方向に垂直な面」を、以後、ＬＷ面と表記することがあり、同様に、他の面についてもＬＨ面あるいはＨＷ面などと表記することがある。なお、図１におけるＬ、Ｗ、Ｈの方向を示す矢印については、使用時におけるコイル部品の配置を特定するものではなく、構造・製法の説明のために付したものである。 The insulator is a rectangular parallelepiped having a length L, a width W, and a height H. In FIG. 1, the directions of length L, width W, and height H are indicated by arrows for the purpose of explaining the directionality. Here, for L, W, and H, the relationship of L> HWW is established. That is, the length of the longest side is defined as the length L of the rectangular parallelepiped. When the width W and the height H are the same length, the specification of the width W and the height H is optional, but in the present invention, the external electrode is formed on the surface perpendicular to the height direction. , Width W and height H are defined. As described later, in the present invention, the coil component 1 is manufactured by sequentially forming layers in the height direction H from the upper side in the drawing of FIG. 1 toward the lower side in the drawing. The “surface perpendicular to the height direction” may be hereinafter referred to as an LW surface, and similarly, the other surfaces may also be referred to as an LH surface or an HW surface. In addition, about the arrow which shows the direction of L, W, H in FIG. 1, it does not specify arrangement | positioning of the coil components at the time of use, but attaches | subjects for description of a structure * manufacturing method.
本発明のコイル部品は小型のものであってもよく、前記Ｌ、Ｗ、Ｈについて、Ｌは好ましくは０．２〜０．４ｍｍであり、Ｗは好ましくは０．１〜０．２ｍｍであり、Ｈは好ましくは０．１〜０．３５ｍｍである。なお、これらの数値はほぼコイル部品の寸法に相当するものである。 The coil component of the present invention may be small in size, and for L, W and H, L is preferably 0.2 to 0.4 mm, and W is preferably 0.1 to 0.2 mm. H is preferably 0.1 to 0.35 mm. These numerical values substantially correspond to the dimensions of the coil component.
図２は本発明のコイル部品における各層を模式的に表す。図２（Ａ）〜（Ｅ）は後述する第１層〜第５層をそれぞれ表し、図２（Ｆ）は外部電極近傍を表す。図２の各図は図１におけるＷＬ面に平行である。図２における（Ａ）から（Ｆ）の順序は、図１における紙面上方から下方への順序に相当する。 FIG. 2 schematically shows each layer in the coil component of the present invention. FIGS. 2A to 2E show first to fifth layers described later, and FIG. 2F shows the vicinity of the external electrode. Each drawing of FIG. 2 is parallel to the WL plane in FIG. The order from (A) to (F) in FIG. 2 corresponds to the order from top to bottom in the drawing of FIG.
本発明によれば、樹脂層により第１層が形成される。図２（Ａ）は第１層の平面図である。好適には、第１層形成前の準備工程として、シリコン、ガラス、サファイア等により形成される基板（図示せず）の上に剥離用樹脂を所定厚さにて塗布して硬化させる。剥離用樹脂は公知のものを特に限定せずに用いることができ、非限定的にシリコーン粘着剤などが例示される。剥離用樹脂の塗布手段は特に限定無く、スピンコータの利用などが例示される。第１層形成前に剥離用樹脂を形成させることによって、後の工程において絶縁体を基板から容易に剥がすことができる。 According to the present invention, the resin layer forms the first layer. FIG. 2A is a plan view of the first layer. Preferably, as a preparation step before the formation of the first layer, a peeling resin is applied and cured to a predetermined thickness on a substrate (not shown) formed of silicon, glass, sapphire or the like. The release resin can be used without particular limitation to known resins, and non-limiting examples thereof include silicone pressure-sensitive adhesives. The means for applying the release resin is not particularly limited, and the use of a spin coater may, for example, be mentioned. By forming the peeling resin before forming the first layer, the insulator can be easily peeled off from the substrate in a later step.
第１層としての樹脂層１１の形成にあたっては、絶縁体１０の一部になるべき樹脂が基板又は剥離用樹脂に塗布され、硬化処理が行われる。樹脂の前処理、塗布、硬化の処理については従来技術を適宜援用することができ、例えば、塗布にあたってはスピンコータによる厚み調整を行ってもよいし、硬化後に研磨剤又は研磨液の化学的作用により行われる化学機械研磨処理（ＣＭＰ処理）に供してもよい。 In the formation of the resin layer 11 as the first layer, the resin to be a part of the insulator 10 is applied to the substrate or the peeling resin, and curing treatment is performed. The prior art can be appropriately used for the pretreatment of the resin, the coating, and the curing, and for example, the thickness may be adjusted by a spin coater at the time of coating, or the chemical action of the polishing agent or polishing solution after curing. It may be subjected to a chemical mechanical polishing process (CMP process) to be performed.
第１層の上に第２層を形成する。ここで、「上」という方向は、層構造を順々に形成していく方向を表す趣旨であり、図１に示された形態における紙面の「上下方向」とは逆である。図２（Ｂ）は第２層の平面図である。第２層は樹脂層１２と少なくとも１つの帯状導体２１とからなる。樹脂層１２は絶縁体１０の一部になるべき樹脂からなり、好適には、第１層における樹脂層１１と同じ材質からなる。帯状導体２１はコイル部の一部になるべき導体である。絶縁体１０が直方体状である場合、帯状導体２１の長手方向は前記直方体状における最長の辺と平行であることが好ましい。より好ましくは、帯状導体２１は矩形状であり、さらに好ましくは、前記矩形状における各角部は丸みを帯びている。帯状導体２１はめっきにより形成される。樹脂層１２と帯状導体２１の具体的な製法については特に限定無く、好適にはフォトリソグラフィが挙げられる。スパッタリングによりシード層を形成し、フォトリソグラフィにより帯状導体２１に相当するレジスト膜を形成、次いでシード層の表面にめっき処理を施して帯状導体２１を形成し、レジスト膜およびシード層を除去してから樹脂層１２の材料である樹脂で全面を覆った後に、研磨処理によって前述の帯状導体２１を露出させる方法が挙げられる。 A second layer is formed on the first layer. Here, the direction "up" is a meaning that indicates the direction in which the layer structure is sequentially formed, and is opposite to the "up-down direction" of the paper surface in the embodiment shown in FIG. FIG. 2 (B) is a plan view of the second layer. The second layer comprises a resin layer 12 and at least one strip conductor 21. The resin layer 12 is made of a resin to be a part of the insulator 10, and preferably made of the same material as the resin layer 11 in the first layer. The strip conductor 21 is a conductor that should be a part of the coil portion. When the insulator 10 has a rectangular parallelepiped shape, the longitudinal direction of the strip conductor 21 is preferably parallel to the longest side of the rectangular parallelepiped shape. More preferably, the strip conductor 21 has a rectangular shape, and more preferably, each corner in the rectangular shape is rounded. The strip-shaped conductor 21 is formed by plating. The specific manufacturing method of the resin layer 12 and the strip conductor 21 is not particularly limited, and photolithography is preferably mentioned. A seed layer is formed by sputtering, a resist film corresponding to the strip conductor 21 is formed by photolithography, and then the surface of the seed layer is plated to form the strip conductor 21 and the resist film and the seed layer are removed. After covering the whole surface with resin which is a material of the resin layer 12, the method of making the above-mentioned strip | belt-shaped conductor 21 exposed by grinding process is mentioned.
シード層の材質としてはＴｉやＣｕ、Ｗ（タングステン）、Ｔａなどが非限定的に挙げられる。シード層の形成方法としてはスパッタリングなどが非限定的に挙げられる。レジスト膜の形成方法は特に限定無く、スピンコータによるレジスト材料の塗布、それに次ぐプリベーク、パターンマスクを用いた露光処理、ＴＭＡＨ等の有機現像液による現像、ならびに、デスカム処理などが非限定的に挙げられる。デスカム処理は、プラズマ照射などによりレジスト膜の残渣を除去する処理である。 As a material of a seed layer, Ti, Cu, W (tungsten), Ta etc. are mentioned without limitation. As a method of forming the seed layer, sputtering and the like can be mentioned without limitation. The method for forming the resist film is not particularly limited, and application of a resist material by a spin coater, followed by prebaking, exposure treatment using a pattern mask, development with an organic developer such as TMAH, and descum treatment may be mentioned without limitation. . The descum treatment is a treatment for removing the residue of the resist film by plasma irradiation or the like.
めっき処理の方法は特に限定はなく従来技術を適宜援用することができ、めっき金属としてはＣｕ、Ａｇなどが挙げられる。レジスト膜およびシード層の除去方法は特に限定はなく、例えば、剥離液を用いてレジスト膜を除去し、酸やアルカリでシード層を除去することなどが挙げられる。樹脂の塗布後に帯状導体２１を露出させる方法としては、例えば、上述のＣＭＰ処理などが挙げられる。 The method of the plating treatment is not particularly limited, and conventional techniques can be used as appropriate, and examples of plating metals include Cu, Ag, and the like. The method for removing the resist film and the seed layer is not particularly limited. For example, the resist film may be removed using a stripping solution, and the seed layer may be removed with an acid or an alkali. As a method of exposing the strip-shaped conductor 21 after application of resin, the above-mentioned CMP process etc. are mentioned, for example.
第２層の上に第３層を形成する。図２（Ｃ）は第３層の平面図である。第３層は樹脂層と少なくとも２つのビア状導体とからなる、図２（Ｃ）の態様では、第３層は樹脂層１３とビア状導体３０、４１とからなる。樹脂層１３は絶縁体１０の一部になるべき樹脂により形成され、好適には、第１層における樹脂層１１と同じ材質からなる。ビア状導体３０、４１はコイル部の一部になるべき導体である。ビア状導体３０、４１はめっきにより形成される。樹脂層１３と帯状導体４１の具体的な製法については特に限定無く、例えば、上述した第２層における樹脂層１２と帯状導体２１との製法を援用することも可能であり、その場合の好適態様についても上述した第２層の製法の場合と同様である。 A third layer is formed on the second layer. FIG. 2C is a plan view of the third layer. The third layer consists of a resin layer and at least two via-like conductors. In the embodiment of FIG. 2C, the third layer consists of a resin layer 13 and via-like conductors 30 and 41. The resin layer 13 is formed of a resin to be a part of the insulator 10, and preferably made of the same material as the resin layer 11 in the first layer. The via-like conductors 30, 41 are conductors that should be part of the coil portion. The via-shaped conductors 30, 41 are formed by plating. There is no particular limitation on the specific manufacturing method of the resin layer 13 and the strip conductor 41. For example, it is possible to use the manufacturing method of the resin layer 12 and the strip conductor 21 in the second layer described above. The same applies to the method of the second layer described above.
好適には、第３層におけるビア状導体３０、４１は全て第２層の帯状導体２１と直接に接続するように形成される。さらに、第３層における柱状導体のうちの２つ（符号４１）は、好ましくは、後述の第４層における帯状導体２２とは直接に接続せずに第４層のビア状導体４２と直接に接続する。好ましくは、第３層における上記２つのビア状導体４１以外のビア状導体３０は後述の第４層における帯状導体２２と直接に接続する。 Preferably, all the via-like conductors 30 and 41 in the third layer are formed to be directly connected to the strip conductor 21 in the second layer. Furthermore, two of the columnar conductors in the third layer (reference numeral 41) are preferably directly connected to the via-like conductor 42 of the fourth layer without being directly connected to the strip conductors 22 of the fourth layer described later. Connecting. Preferably, the via conductors 30 other than the two via conductors 41 in the third layer are directly connected to the strip conductors 22 in the fourth layer described later.
第３層の上に第４層を形成する。図２（Ｄ）は第４層の平面図である。第４層は樹脂層１４と帯状導体２２とビア状導体４２とからなる。第４層には帯状導体が少なくとも１つ、ビア状導体が少なくとも２つ存在する。樹脂層１４は絶縁体１０の一部になるべき樹脂からなり、好適には、第１層における樹脂層１１と同じ材質からなる。帯状導体２２とビア状導体４２はコイル部の一部になるべき導体である。帯状導体２２およびビア状導体４２はめっきにより形成される。樹脂層１４と各導体２２、４２の具体的な製法については特に限定無く、例えば、上述した第２層における樹脂層１２と帯状導体２１との製法を援用することも可能であり、その場合の好適態様についても上述した第２層の製法の場合と同様である。 A fourth layer is formed on the third layer. FIG. 2D is a plan view of the fourth layer. The fourth layer comprises the resin layer 14, the strip conductor 22 and the via conductor 42. The fourth layer has at least one strip conductor and at least two via conductors. The resin layer 14 is made of a resin to be a part of the insulator 10, and preferably made of the same material as the resin layer 11 in the first layer. The strip-shaped conductor 22 and the via-like conductor 42 are conductors to be a part of the coil portion. The strip conductor 22 and the via conductor 42 are formed by plating. There is no particular limitation on the specific manufacturing method of the resin layer 14 and the conductors 22 and 42. For example, it is possible to use the manufacturing method of the resin layer 12 and the strip conductor 21 in the second layer described above. The preferred embodiment is also the same as in the above-mentioned method of producing the second layer.
好適には、第４層にはビア状導体４２は２つのみ設けられ、両者はいずれも第３層のビア状導体４１と後述の第５層の柱状導体４３とを直接に接続するように形成される。第４層における帯状導体２２は、好ましくは、第２層の帯状導体２１とは高さ方向に投影して非平行に形成される。より好ましくは、第２層における隣り合う２つの帯状導体２１のそれぞれ一つずつの端部を高さ方向に投影した位置を結ぶように、第４層の帯状導体２２が形成される。これにより、周回部の１周回として、第２層の帯状導体２１の一端から第３層のビア状導体３０を介して第４層の帯状導体２２の一端に至り、さらに、当該帯状導体２２の他端を経て、第３層の前記とは別のビア状導体３０を介して第２の帯状導体２１（前述の導体の隣の導体）の一端へと到達する構造が得られる。 Preferably, only two via-like conductors 42 are provided in the fourth layer, both of which directly connect the via-like conductors 41 of the third layer and the columnar conductors 43 of the fifth layer described later. It is formed. The strip conductor 22 in the fourth layer is preferably projected non-parallel to the strip conductor 21 of the second layer in the height direction. More preferably, the strip conductor 22 of the fourth layer is formed so as to connect the projected positions in the height direction of the respective end portions of the two adjacent strip conductors 21 in the second layer. As a result, one end of the strip conductor 21 of the second layer reaches one end of the strip conductor 22 of the fourth layer via the via conductor 30 of the third layer as one turn of the winding portion, and further, of the strip conductor 22 Through the other end, a structure is obtained which reaches one end of the second strip conductor 21 (the conductor next to the above-mentioned conductor) via the other via-like conductor 30 of the third layer.
このように、第４層に帯状導体２２およびビア状導体４２の両方を配置することで、本発明の製法全体におけるめっき回数が結果的に少なくなる。 Thus, by arranging both the strip conductor 22 and the via-like conductor 42 in the fourth layer, the number of times of plating in the whole manufacturing method of the present invention is consequently reduced.
第４層のビア状導体４２と帯状導体２２のそれぞれの形状は任意である。それらのうち、最も大きな帯状導体の面積は、最も小さな導体の面積の１００倍以下であり好ましくは５０倍以下である。第４層に形成するビア導体４２のうち、最も小さな導体の面積は好ましくは５０μｍ２以上であり、より好ましくは２０μｍ２である。第４層に形成する導体２２、４２のうち、最も大きい導体は最も小さいビア導体４２の好ましくは１００倍以下、より好ましくは５０倍以下の面積である。これにより部品の小型化に対応でき、具体的には、いわゆる０４０２サイズ（０．４ｍｍ×０．２ｍｍ×０．２ｍｍ）や０２０１サイズ（０．２ｍｍ×０．１ｍｍ×０．１ｍｍ）といった小さなコイル部品であっても、柱状導体の断面積は確保でき、低Ｒｄｃ化が可能であり、柱状のテーパを最小限にでき、部分的な断面積の変化や材料密度の変化はほとんどなく、安定した導体が得られ、導体断面積を揃えることで、部分的なＲｄｃの変化を抑えることができ、Ｑ値の向上が期待される。なお、第４層に形成する各導体４２、２２のうち、最も小さな導体の面積の上限は好ましくは３２０μｍ２であり、より好ましくは８０μｍ２である。ここで、導体の面積とは、第４層のＷＬ断面に表れる導体部分の面積を意味する。 The shapes of the via-like conductor 42 and the strip conductor 22 of the fourth layer are arbitrary. Among them, the area of the largest strip conductor is not more than 100 times and preferably not more than 50 times the area of the smallest conductor. The area of the smallest conductor of the via conductors 42 formed in the fourth layer is preferably 50 μm 2 or more, and more preferably 20 μm 2 . Among the conductors 22 and 42 formed in the fourth layer, the largest conductor is preferably 100 times or less, more preferably 50 times or less the area of the smallest via conductor 42. This makes it possible to cope with the miniaturization of parts, specifically, small coils such as so-called 0402 size (0.4 mm × 0.2 mm × 0.2 mm) or 0201 size (0.2 mm × 0.1 mm × 0.1 mm) Even for parts, the cross-sectional area of the columnar conductor can be secured, Rdc can be reduced, columnar taper can be minimized, partial cross-sectional area change and material density change hardly occur, and stable Conductors can be obtained, and by making the conductor cross-sectional areas uniform, partial changes in Rdc can be suppressed, and improvement in Q value is expected. The upper limit of the area of the smallest conductor among the conductors 42 and 22 formed in the fourth layer is preferably 320 μm 2 , and more preferably 80 μm 2 . Here, the area of the conductor means the area of the conductor portion appearing in the WL cross section of the fourth layer.
第４層の帯状導体２２は、好ましくは、めっき形成方向に垂直な断面の各角部が丸みを帯びるように形成される。めっき形成方向に垂直な断面は、図２（Ｄ）に描写される面である。好適には、各角部に設けられた丸みにおける曲率半径Ｒは帯状導体２２の幅Ｂの１０〜５０％である。帯状導体２２の幅Ｂは、めっき形成方向に垂直な断面における帯状導体２２の短手方向の長さである。このような丸みを帯びさせることにより、帯状導体２２が小さくてもめっき成長が安定する。 The strip conductor 22 of the fourth layer is preferably formed so that each corner of the cross section perpendicular to the plating direction is rounded. The cross section perpendicular to the plating direction is the plane depicted in FIG. 2 (D). Preferably, the radius of curvature R of the roundness provided at each corner is 10 to 50% of the width B of the strip conductor 22. The width B of the strip conductor 22 is the length in the short direction of the strip conductor 22 in a cross section perpendicular to the plating direction. Such roundness stabilizes the plating growth even if the strip conductor 22 is small.
第４層の上に第５層を形成する。図２（Ｅ）は第５層の平面図である。第５層は樹脂層１５と柱状導体４３とからなる。樹脂層１５は絶縁体１０の一部になるべき樹脂からなり、好適には、第１層における樹脂層１１と同じ材質からなる。柱状導体４３は後述する外部電極に直結すべき導体（引出し部）に相当する。柱状導体４３はめっきにより形成される。樹脂層１５と柱導体４３の具体的な製法については特に限定無く、例えば、上述した第２層における樹脂層１２と帯状導体２１との製法を援用することも可能であり、その場合の好適態様についても上述した第２層の製法の場合と同様である。 A fifth layer is formed on the fourth layer. FIG. 2E is a plan view of the fifth layer. The fifth layer is composed of a resin layer 15 and a columnar conductor 43. The resin layer 15 is made of a resin to be a part of the insulator 10, and preferably made of the same material as the resin layer 11 in the first layer. The columnar conductor 43 corresponds to a conductor (extraction portion) to be directly connected to an external electrode described later. The columnar conductors 43 are formed by plating. There is no particular limitation on the specific manufacturing method of the resin layer 15 and the column conductor 43. For example, it is possible to use the manufacturing method of the resin layer 12 and the strip conductor 21 in the second layer described above. The same applies to the method of the second layer described above.
好適には、第５層の柱状導体４３は２つのみ設けられ、それぞれ、第４層のビア状導体４２と直接に接続するように形成される。さらに好ましくは、第３層におけるビア状導体のうちの２つ（符号４１）、第４層のビア状導体４２および第５層の柱状導体４３が一体となって、第２層の帯状導体２１と後述する外部電極とを介する導体（図１における符号４０）を構成する。導体４０のうち、第５層の部分（すなわち、柱状導体４３）を引出し部ともよぶ。
Preferably, only two columnar conductors 43 of the fifth layer are provided, and they are formed so as to be directly connected to the via-like conductor 42 of the fourth layer, respectively. More preferably, two (41) of the via conductors in the third layer, the via conductors 42 in the fourth layer, and the columnar conductors 43 in the fifth layer are integrated to form the strip conductor 21 in the second layer. And a conductor (reference numeral 40 in FIG. 1) via an external electrode described later. The portion of the fifth layer (i.e., the columnar conductor 43) of the conductor 40 is also referred to as a lead-out portion.
第５層の上に外部電極を形成する。図２（Ｆ）は外部電極を含む層の平面図である。外部電極５１、５２の形成方法は特に限定はなく、好適にはフォトリソグラフィが挙げられる。フォトリソグラフィの具体的な実施については特に限定は無く、スパッタリングによりシード層を形成し、次いで外部電極５１、５２に相当する形状にてレジスト膜を形成し、シード層の表面にめっき処理を施して外部電極５１、５２を形成し、レジスト膜およびシード層を除去する方法が挙げられる。 An external electrode is formed on the fifth layer. FIG. 2F is a plan view of a layer including an external electrode. The method of forming the external electrodes 51 and 52 is not particularly limited, and preferably includes photolithography. There is no particular limitation on the specific implementation of photolithography, and a seed layer is formed by sputtering, then a resist film is formed in a shape corresponding to the external electrodes 51 and 52, and the surface of the seed layer is plated. There is a method of forming the external electrodes 51 and 52 and removing the resist film and the seed layer.
シード層の材質としてはＴｉやＣｕ、Ｗ（タングステン）、Ｔａなどが非限定的に挙げられる。シード層の形成方法としてはスパッタリングなどが非限定的に挙げられる。レジスト膜の形成方法は特に限定無く、スピンコータによるレジスト材料の塗布、それに次ぐプリベーク、パターンマスクを用いた露光処理、ＴＭＡＨ等の有機現像液による現像、ならびに、上述したデスカム処理などが非限定的に挙げられ、プラズマ照射などによりレジスト膜の残渣を除去する処理である。 As a material of a seed layer, Ti, Cu, W (tungsten), Ta etc. are mentioned without limitation. As a method of forming the seed layer, sputtering and the like can be mentioned without limitation. The method for forming the resist film is not particularly limited, and application of the resist material by a spin coater, followed by pre-baking, exposure treatment using a pattern mask, development with an organic developer such as TMAH, and the above-described descum treatment etc. It is a process of removing the residue of the resist film by plasma irradiation or the like.
めっき処理の方法は特に限定はなく従来技術を適宜援用することができ、めっき金属としてはＣｕ、Ａｇなどが挙げられる。レジスト膜およびシード層の除去方法は特に限定はなく、例えば、剥離液を用いてレジスト膜を除去し、酸やアルカリでシード層を除去することなどが挙げられ、これにより安定性が得られる。 The method of the plating treatment is not particularly limited, and conventional techniques can be used as appropriate, and examples of plating metals include Cu, Ag, and the like. The method for removing the resist film and the seed layer is not particularly limited. For example, the resist film may be removed using a stripping solution, and the seed layer may be removed with an acid or an alkali, whereby stability is obtained.
外部電極は同一面上に２つ形成されることが好ましく、外部電極５１、５２は、それぞれ、第５層に形成された柱状導体４３の一つずつと直接に接続する。 Preferably, two external electrodes are formed on the same surface, and the external electrodes 51 and 52 are directly connected to one of the columnar conductors 43 formed in the fifth layer, respectively.
このようにしてコイル部品を製造することができる。各層で形成した樹脂層１１〜１５は一体となって絶縁体１０を構成する。この絶縁体１０の内部にコイル部が形成される。コイル部は、第２層の帯状導体２１、第３層のビア状導体３０及び第４層の帯状導体２２が一体となってコイルの周回構造を構成する。第３層の柱状導体４１および第４層のビア状導体４２が一体となって、コイル部の端部を形成する。その端部から第５層の柱状導体４３を経て、外部電極５１、５２へ電気的に接続される。このようにして、コイルの周回構造と外部電極５１、５２とを結ぶ導体４０が構成される。 Thus, coil components can be manufactured. The resin layers 11 to 15 formed in each layer integrally constitute the insulator 10. A coil portion is formed inside the insulator 10. In the coil portion, the strip conductor 21 of the second layer, the via-like conductor 30 of the third layer, and the strip conductor 22 of the fourth layer are integrated to form a coil winding structure. The columnar conductor 41 of the third layer and the via-like conductor 42 of the fourth layer integrally form an end of the coil portion. It is electrically connected to the external electrodes 51 and 52 through the columnar conductor 43 of the fifth layer from the end thereof. In this manner, a conductor 40 connecting the circuit structure of the coil and the external electrodes 51 and 52 is formed.
本発明のコイル部品においては、導体や樹脂層などの形成手法そのものについては従来技術を適宜援用することができ、このため、当業者であれば、以上の記載及び請求項の記載にもとづいて、種々の形態のコイル部品を製造することができる。 In the coil component of the present invention, conventional techniques can be appropriately used to form the conductor, the resin layer, etc. as such, and therefore, one skilled in the art can use the above description and the claims. Various forms of coil components can be manufactured.
１：コイル部品
１０：絶縁体
１１〜１５：樹脂層
２１、２２：帯状導体
３０、４１、４２：ビア状導体
４０：導体
４３：柱状導体
５１、５２：外部電極
1: Coil parts 10: Insulator 11-15: Resin layer 21, 22: Strip conductor 30, 41, 42: Via-like conductor 40: Conductor 43: Columnar conductor 51, 52: External electrode
Claims (4)
樹脂層からなる第１層と、
第１層の上に、樹脂層と少なくとも２つの帯状導体とからなる第２層と、
第２層の上に、樹脂層と少なくとも４つのビア状導体とからなる第３層と、
第３層の上に、樹脂層と第２層の帯状導体の層の上方向への投影に対して非平行な少なくとも１つの帯状導体と前記帯状導体から独立した２つのビア状導体とからなる第４層と、
第４層の上に、樹脂層と少なくとも２つの柱状導体とからなる第５層と、
第５層の上に、外部電極と、を有し、
前記第１〜５層の樹脂層が一体となって絶縁体を構成し、前記第２〜５層の帯状導体、ビア状導体及び柱状導体がコイル状の内部導体を構成し、
第５層の柱状導体が前記外部電極に接続し、
第３層におけるビア状導体うちの２つ、第４層のビア状導体および第５層の柱状導体が一体となって、第２層の帯状導体と外部電極とを介する導体を構成し、
前記第４層のビア状導体の面積は５０μｍ ２ 〜３２０μｍ ２ であり、
前記第４層の帯状導体のうち最大の面積は第４のビア状導体のうち最小の面積の１倍より大きく１００倍以下であり、
前記第２層及び第４層の帯状導体、第５層の柱状導体、第３層及び第４層のビア状導体、及び外部電極はフォトリソグラフィを用いて形成されたものである、
コイル部品。 A coil component comprising: an insulator made of resin; a coil-shaped inner conductor provided in the insulator; and an external electrode electrically connected to the inner conductor.
A first layer comprising a resin layer,
A second layer comprising a resin layer and at least two strip conductors on the first layer;
A third layer comprising a resin layer and at least four via-like conductors on the second layer;
It consists of at least one strip conductor which is not parallel to the upward projection of the resin layer and the layer of the strip conductor of the second layer on the third layer and two via-like conductors independent of the strip conductor. The fourth layer,
A fifth layer comprising a resin layer and at least two columnar conductors on the fourth layer;
An external electrode on the fifth layer,
The resin layers of the first to fifth layers integrally constitute an insulator, and the strip-like conductors, the via-like conductors and the columnar conductors of the second to fifth layers constitute a coil-like internal conductor,
The fifth layer columnar conductor is connected to the external electrode,
Two of the via-like conductors in the third layer, the via-like conductors in the fourth layer, and the columnar conductors in the fifth layer integrally form a conductor via the strip conductor of the second layer and the external electrode ,
Area of the via conductor of the fourth layer is 50μm 2 ~320μm 2,
The largest area of the strip conductors of the fourth layer is more than 1 and not more than 100 times the smallest area of the fourth via conductor,
The second layer and the strip conductor of the fourth layer, the columnar conductor of the fifth layer, the via conductor of the third layer and the fourth layer, and external electrodes Ru der those formed using photolithography,
Coil parts.
樹脂層からなる第１層と、
第１層の上に、樹脂層と少なくとも２つの帯状導体とからなる第２層と、
第２層の上に、樹脂層と少なくとも４つのビア状導体とからなる第３層と、
第３層の上に、樹脂層と第２層の帯状導体の層の上方向への投影に対して非平行な少なくとも１つの帯状導体と前記帯状導体から独立した２つのビア状導体とからなる第４層と、
第４層の上に、樹脂層と少なくとも２つの柱状導体とからなる第５層と、
第５層の上に、外部電極と、を有し、
前記第１〜５層の樹脂層が一体となって絶縁体を構成し、前記第２〜５層の帯状導体、ビア状導体及び柱状導体がコイル状の内部導体を構成し、
第５層の柱状導体が前記外部電極に接続し、
第３層におけるビア状導体うちの２つ、第４層のビア状導体および第５層の柱状導体が一体となって、第２層の帯状導体と外部電極とを介する導体を構成し、
前記第４層のビア状導体の面積は２０μｍ ２ 〜８０μｍ ２ であり、
前記第４層の帯状導体のうち最大の面積は第４層のビア状導体のうち最小の面積の１倍より大きく５０倍以下であり、
前記第２層及び第４層の帯状導体、第５層の柱状導体、第３層及び第４層のビア状導体、及び外部電極はフォトリソグラフィを用いて形成されたものである、
コイル部品。 A coil component comprising: an insulator made of resin; a coil-shaped inner conductor provided in the insulator; and an external electrode electrically connected to the inner conductor.
A first layer comprising a resin layer,
A second layer comprising a resin layer and at least two strip conductors on the first layer;
A third layer comprising a resin layer and at least four via-like conductors on the second layer;
It consists of at least one strip conductor which is not parallel to the upward projection of the resin layer and the layer of the strip conductor of the second layer on the third layer and two via-like conductors independent of the strip conductor. The fourth layer,
A fifth layer comprising a resin layer and at least two columnar conductors on the fourth layer;
An external electrode on the fifth layer,
The resin layers of the first to fifth layers integrally constitute an insulator, and the strip-like conductors, the via-like conductors and the columnar conductors of the second to fifth layers constitute a coil-like internal conductor,
The fifth layer columnar conductor is connected to the external electrode,
Two of the via-like conductors in the third layer, the via-like conductors in the fourth layer, and the columnar conductors in the fifth layer integrally form a conductor via the strip conductor of the second layer and the external electrode ,
Area of the via conductor of the fourth layer is 20μm 2 ~80μm 2,
The largest area of the strip conductors in the fourth layer is more than 1 and not more than 50 times the smallest area of the via conductors in the fourth layer,
The second layer and the strip conductor of the fourth layer, the columnar conductor of the fifth layer, the via conductor of the third layer and the fourth layer, and external electrodes Ru der those formed using photolithography,
Coil parts.
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