JP6528872B2 - Method of manufacturing light emitting device - Google Patents

Description

  The present disclosure relates to a method of manufacturing a light emitting device.

For example, in Patent Document 1 (see FIGS. 50 to 68), a semiconductor substrate, an optical element mounted on the semiconductor substrate, a phosphor layer laminated on the optical element, and a side surface of the optical element and the phosphor layer And a reflective resin portion covering the optical device.

JP, 2011-066193, A

In the method of manufacturing an optical device described in Patent Document 1, after laminating a phosphor sheet on an optical element sheet, the optical element sheet and the phosphor sheet are collectively cut, and the reflection resin layer is formed in the groove. Since it forms, in order to ensure the reflective resin part which covers the side of a fluorescent substance layer, the cutting width of a fluorescent substance sheet must be enlarged.

Therefore, in one embodiment of the present invention, the amount of cutting of the light transmitting member provided on the light emitting element can be reduced, and the covering member covering the side surface of the light transmitting member can have a sufficient thickness. An object of the present invention is to provide a method of manufacturing a light emitting device.

In a method of manufacturing a light emitting device according to an embodiment of the present invention, a first step of mounting a first light emitting element and a second light emitting element on a substrate so as to be separated from each other and flip chip mounting; An adhesive member on the first light emitting element, and bonding a second light transmitting member having a second side surface on the second light emitting element so that the second side surface is separated from and facing the first side surface A second step, a third step of scraping the first side surface and / or the second side surface to expose a first side surface and / or a second side surface, the first side surface or the first side surface, and Forming a light-reflecting covering member for covering the second side surface or the second side surface on the substrate;
A fifth step of cutting the substrate and the covering member is sequentially provided between the first side surface or the first side surface and the second side surface or the second side surface. .

According to the manufacturing method of the light emitting device of the embodiment of the present invention, the covering member covering the side surface of the light transmitting member can have a sufficient thickness while suppressing the cutting amount of the light transmitting member. .

It is a schematic perspective view of the light-emitting device concerning one embodiment of the present invention. FIG. 1 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present invention. It is a schematic top view of an example of a substrate used for manufacture of a light emitting device concerning an embodiment of the invention. It is a schematic sectional drawing which shows the 1st process of the manufacturing method of the light-emitting device which concerns on one embodiment of this invention. It is a schematic sectional drawing which shows the 2nd process of the manufacturing method of the light-emitting device which concerns on one embodiment of this invention. It is a schematic sectional drawing which shows the 3rd process of the manufacturing method of the light-emitting device which concerns on one embodiment of this invention. It is a schematic sectional drawing which shows the 4th process of the manufacturing method of the light-emitting device which concerns on one embodiment of this invention. It is a schematic sectional drawing which shows the 5th process of the manufacturing method of the light-emitting device which concerns on one embodiment of this invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings as appropriate. However, the light emitting device and the manufacturing method thereof to be described below are for embodying the technical concept of the present invention, and the present invention is not limited to the following unless specific description is given. Further, the sizes and positional relationships of members shown in the drawings may be exaggerated in order to clarify the description.

The visible wavelength range is a wavelength range of 380 nm to 780 nm, the blue range is a wavelength range of 420 nm to 480 nm, the green range is a wavelength range of 500 nm to 560 nm, and the yellow range is a wavelength range of 560 nm to 590 nm Range, the red region has a wavelength of 610
It is in the range of nm to 750 nm.

Embodiment 1
1A and 1B are respectively a schematic perspective view and a schematic cross-sectional view of the light emitting device 100 according to the first embodiment. FIG. 2 is a schematic top view of an example of the substrate 10 used for manufacturing the light emitting device 100 according to the first embodiment. 3A to 3E are schematic cross-sectional views showing first to fifth steps of the method for manufacturing the light emitting device 100 according to the first embodiment.

1A and 1B, in the light emitting device 100, the width direction is indicated by the X direction, the thickness direction is indicated by the Y direction, and the back and forth (depth) direction is indicated by the Z direction. The X, Y, Z directions (axes) are often directions (axes) perpendicular to the other two directions (axes). More specifically, the right direction is the X ₊ direction, the left direction is the X ₋ direction, the upper direction is the Y ₊ direction, the lower direction is the Y ₋ direction, the front direction is the Z ₊ direction, and the rear direction is the Z ₋ direction. The Y ₋ direction is the mounting direction of the light emitting device 100. Z ₊ direction is the light emitting device 10
It is a main light emission direction of 0. The X, Y, and Z directions in FIGS. 2 and 3A to 3E are the same as in FIG.
The X direction corresponds to the X, Y, and Z directions in 1B, but the X direction is a lateral direction in FIGS. 2 and 3A to 3E.
The Y direction is the vertical direction, and the Z direction is the vertical direction. Hereinafter, the X direction is referred to as a first direction, and the Y direction is referred to as a second direction.
It will be the direction.

(Light-emitting device 100)
As shown in FIGS. 1A and 1B, the light emitting device 100 according to the first embodiment includes a small piece substrate 101, a conductive adhesive member 20, a light emitting element 30, a light guiding member 40, and a light transmitting member 50. And a light reflective covering member 701. The small substrate 101 includes the wiring 111 and the wiring 11 thereof.
And a base 151 for holding 1. The light emitting element 30 is a light emitting diode chip which is long in the X direction and short in the Y direction. The light emitting element 30 is flip-chip mounted on the wiring 111 of the small piece substrate via the conductive adhesive member 20. The light transmitting member 50 contains the wavelength conversion material 60 in the base material 55. The translucent member 50 is a rectangular solid piece that is long in the X direction and short in the Y direction. The translucent member 50 has a size that hides all of the light emitting elements 30 in front view. The translucent member 50 is bonded onto the light emitting element 30 via the light guide member 40. The covering member 701 contains the white pigment 77 in the base material 75. Cover member 70
Reference numeral 1 is formed on the small piece substrate 101, and covers the side surface of the light emitting element 30, the side surface of the light guide member 40, and the side surface of the light transmitting member 50. The covering member 701 includes the light emitting element 30 and the light transmitting member 5.
It surrounds the entire circumference of 0 side. The front surface of the light transmitting member 50 and the front surface of the covering member 701 constitute substantially the same surface.

The wiring 111 is obtained by dividing a wiring 11 described later. The base 151 is obtained by separating a base 15 described later. The covering member 701 is one in which a covering member 70 described later is singulated. The light emitting element 30 is a first light emitting element 31 or a second light emitting element 32 described later.
Is included. The translucent member 50 includes a first translucent member 51 or a second translucent member 52 described later.

In the light emitting device 100 having such a configuration, for example, the external connection terminal portion of the positive electrode / negative electrode of the wiring 111 is soldered to the circuit board, and light is emitted when power is supplied through the circuit. At this time, due to the high light reflectivity of the covering member 701, much light emitted laterally from the light emitting element 30 and the light transmitting member 50 is deflected forward, and the main light emitting region of the light emitting device 100 is a light transmitting member It becomes the front of 50.

(Method of manufacturing light emitting device 100)
As shown in FIG. 2, the substrate 10 is a collective substrate formed by connecting a plurality of small-piece substrates 101 for light emitting devices. The substrate 10 has a wire 11 and a base 15 for holding the wire 11. A plurality of through holes S which are long in the Y direction and which penetrate from the upper surface to the lower surface are formed in the base 15 at equal intervals in the X direction. In the upper surface of the substrate 10, a region sandwiched by two through holes S,
More specifically, the central portion is a mounting area of a light emitting element including the first light emitting element 31 and the second light emitting element 32 described later. In the region sandwiched by the two through holes S, the wiring 11 places the element connection terminal portion of the positive electrode / negative electrode at the center of the upper surface of the base 15 and the external connection terminal portion of the positive electrode / negative electrode
The upper surface of the base 15 includes a lead wiring portion connecting between the left / right end portion of the upper surface, the side surface of the through hole S and the left / right end portion of the lower surface, and between the terminal portions. As described above, the region between the two through holes S of the substrate 10 is configured by connecting the small piece substrates 101 for a plurality of light emitting devices in the Y direction. Then, by cutting between the two through holes S in the X direction, the small piece substrate 101 of one light emitting device is singulated.

As shown to FIG. 3A-FIG. 3E, the manufacturing method of the light-emitting device 100 which concerns on Embodiment 1 is equipped with the following 1st process-5th process in this process number order.

In the first step, as shown in FIG. 3A, the first light emitting element 31 and the second light emitting element 32 are formed on the substrate 10.
Are separated from each other for flip chip mounting. That is, the positive electrode / negative electrode of the first light emitting element 31 and the second light emitting element 32 are connected to the positive / negative element connection terminal portion of the wiring 11 through the conductive adhesive member 20, respectively. At this time, the first light emitting element 31 and the second light emitting element 3
When 2 is rectangular in top view, it is preferable that the two side surfaces opposed to each other be substantially parallel in the X direction and the other two side surfaces opposed to each other be substantially parallel in the Y direction. More specifically, for example, the conductive adhesive member (20) in the paste state is applied to the element connection terminal portion of the positive electrode / negative electrode, and the first light emitting element 31 and the second light emitting element 32 are mounted thereon. , Conductive adhesive members (2
0) is melted by heat treatment in a reflow furnace or the like, and then cooled and solidified. The reference numerals in parentheses in the present specification and drawings mean that the constituent elements are in a state before reaching the final form.

In the second step, as shown in FIG. 3B, after the first step, the first light-transmissive member 51 having the first side surface 51L is bonded onto the first light emitting element 31, and the second side 52L is provided. This is a step of bonding the translucent member 52 on the second light emitting element 32 so that the second side surface 52L is separated from and facing the first side surface 51L. At this time, the first light emitting element 31, the second light emitting element 32, and the first light transmitting member 5
When the first and second light transmitting members 52 have a rectangular shape in top view, the first light transmitting member 51 and the second light transmitting member 52 have the first light emitting element 31 and the second light emitting element on the respective side surfaces thereof. It is preferable that the adhesive be adhered so as to be almost parallel to each side surface of the substrate 32. More specifically, for example, a liquid light guide member (40) is applied on the first light emitting element 31 and the second light emitting element 32 mounted on the substrate 10, and the first light transmitting member is formed thereon. 51 and the second light transmitting member 52 are placed on the light guiding member (40)
Is cured by heat treatment in an oven or the like. In addition, "liquid" in the present specification includes sol and slurry.

In addition, the 1st translucent member 51 and the 2nd translucent member 52 are produced by, for example, cutting a sheet into small pieces, that is, singulating. For cutting this sheet, it is preferable to use a non-rotating blade from the viewpoint of easily reducing the cutting width of the sheet. The non-rotating blade may, for example, be a pull-cut or push-cut cutter. In addition, in order to make the first side surface 51L and the second side surface 52L relatively flat, it is preferable to apply ultrasonic waves to the non-rotating blade. In addition, for the same reason as described later, it is preferable that the cutting of the sheet is also performed by a dry cutting apparatus.

In the third step, as shown in FIG. 3C, after the second step, the first side surface 51L of the first light-transmissive member and / or the second side surface 52L of the second light-transmissive member are scraped to form a first side surface. This is a step of exposing the 51LS and / or the second side 52LS. More specifically, for example, with the cutting tool 90, which is a disk-shaped rotary blade, with the disc surface parallel to the X direction, the predetermined position in the Y direction, that is, the blade of the cutting tool 90 has the first side surface 51L and the second side surface. It is set to a position contacting at least one of 52 L, and is scanned on the substrate 10 in the X direction while being separated from the upper surface of the substrate 10. In addition, the first
The side surface 51LS is a side surface that exists in place of the first side surface 51L after the first side surface 51L of the first light transmitting member is scraped. Further, the second side 52LS is a second side 52 of the second light transmitting member.
After scraping L, it is a side that exists in place of the second side 52L.

In the fourth step, as shown in FIG. 3D, after the third step, a light reflective covering member 70 that covers the first side surface 51L or the 1 'side surface 51LS and the second side surface 52L or the 2' side surface 52LS. Are formed on the substrate 10. More specifically, for example, the first light emitting element 31, the second light emitting element 32, the first light transmitting member 51, and the second light transmitting member 5 on the substrate 10.
2 is filled with a liquid covering member 70, and the covering member 70 is cured by heat treatment in an oven or the like. At this time, for example, after the covering member 70 is formed so that the first light transmitting member 51 and the second light transmitting member 52 are completely embedded in the covering member 70, the first light transmitting property is obtained by grinding or blasting. The upper surface of the member 51 and the upper surface of the second light transmitting member 52 are covered with the covering member 7
Expose from 0. In addition, the upper surface of the first light transmitting member 51 and the upper surface of the second light transmitting member 52 are molded so that the upper surface of the first light transmitting member 51 and the upper surface of the second light transmitting member 52 are exposed. The liquid covering member 70 may be filled and cured while being pressed with an adhesive.

In the fifth step, as shown in FIG. 3E, after the fourth step, the substrate 10 and the coating are formed between the first side surface 51L or the first side surface 51LS and the second side surface 52L or the second side surface 52LS. This is a step of cutting the member 70. More specifically, for example, with a cutting tool 92, which is a disk-shaped rotary blade, with the disc surface parallel to the X direction, in the Y direction, the first side surface 51L or the 1 'side surface 51LS, and the second side surface 52L. Alternatively, the substrate 10 and the covering member 70 are cut by setting a center between the second side surface 52LS and the second side surface 52LS and scanning in the X direction. At this time, at least one of the covering member 70 covering the first side face 51L or the first side face 51LS and the covering member 70 covering the second side face 52L or the second side side 52LS preferably both remain. Thus, the substrate 10 and the covering member 70 are cut. Also, this fifth
In the step, from the viewpoint of making it easy to secure a sufficient thickness of the covering member 70, the first side surface 51L or the 1 'side surface 51LS and the second side surface 52L or the 2' side surface 52 LS at the time of completion of the fourth step; It is preferable to use a cutting tool 92 having a thickness smaller than the interval of.

As described above, in the method of manufacturing the light emitting device 100 according to the first embodiment, in the second step, the first light transmitting member 51 and the second light transmitting member 52 separated in advance are separated from each other to form the first light emitting element 31. Since the adhesive is often adhered on the second light emitting element 32, the cutting for separating the first light transmitting member 51 and the second light transmitting member 52 is not necessary. For this reason, the cutting amount of the 1st translucent member 51 and the 2nd translucent member 52 can be restrained. Also, if temporarily, the first side surface 51L after the completion of the second step
Even if the distance between the second side surface 52L and the second side surface 52L is insufficient, the distance can be corrected by scraping the first side surface 51L and / or the second side surface 52L in the third step. Thereby, the thickness of the covering member 70 filled between the first side surface 51L or the 1 'side surface 51LS and the second side surface 52L or the 2' side surface 52 LS can be managed with high accuracy.
Therefore, according to the method of manufacturing light emitting device 100 of the first embodiment, first light transmitting member 5 is used.
The covering member 70 covering the side surface of the first light transmitting member 51 and the side surface of the second light transmitting member 52 has a sufficient thickness while suppressing the cutting amount of the first and second light transmitting members 52 Can.

The flip chip mounting of the first light emitting element 31 and the second light emitting element 32, that is, the firing of the conductive adhesive member 20 is performed at a relatively high temperature, for example, at a higher temperature than when soldering to the circuit board of the light emitting device 100. It is often found. For this reason, adhesion of the first light transmitting member 51 and the second light transmitting member 52 to the first light emitting element 31 and the second light emitting element 32 is the same as the first light emitting element 31 and the second light emitting element 32.
By performing the light-emitting element 32 after the flip chip mounting, it is possible to suppress the deterioration of the first light-transmissive member 51 and the second light-transmissive member 52 due to the heat. In particular, the first translucent member 51 and the second
When the light transmitting member 52 contains the wavelength conversion substance 60, the deterioration of the wavelength conversion substance 60 due to heat can be suppressed. As the wavelength conversion substance 60 having a relatively low heat resistance, for example, a manganese activated fluoride phosphor is mentioned. However, in the case where the first light transmitting member 51 and the second light transmitting member 52 which are separated in advance are bonded onto the first light emitting element 31 and the second light emitting element 32 fixed to the substrate 10 respectively, only the bonding technology This makes it difficult to control the distance between the first side surface 51L and the second side surface 52L with high accuracy. The third step of the present embodiment is to solve such a problem.

Hereinafter, preferred embodiments of the method of manufacturing light emitting device 100 according to the first embodiment will be described in detail.

As shown in FIG. 3C, in the third step, it is preferable to use a cutting tool 90 having a thickness greater than the distance between the first side surface 51L and the second side surface 52L at the completion of the second step. Thereby, the first side surface 51L and the second side surface 52L can be simultaneously cut by one cutting tool 90. Therefore, it is easy to manage the distance between the first side 51LS and the second side 52LS, and it is easy to manage the thickness of the covering member 70 filled therebetween. In addition, the first side surface 51L and the second side surface 52L can be scraped with less man-hours.

As shown in FIGS. 1B and 3B, the first light transmitting member 51 and the second light transmitting member 52 are often used.
The base material 55 and the wavelength conversion material 60 contained in the base material 55 are included. The wavelength conversion material 60 absorbs primary light of the first light emitting element 31 and the second light emitting element 32, and emits secondary light of a wavelength different from the wavelength of the primary light. Then, before the third step, the first side surface 51L and the second side surface 52L each have a convex portion formed by the presence of the wavelength conversion material 60. In such a case, it is preferable to scrape the convex portion in the third step. First side 51L
The convex portion on the second side surface 52L is directly covered by the light reflective covering member 70 to form a light confining region, which tends to cause light loss. For this reason, in the third step, it is preferable to scrape the convex portion and level the first side 51LS and / or the second side 52LS evenly.

As shown in FIGS. 1B and 3B, the wavelength conversion material 60 includes a first phosphor 61.
The base material 55 of the first light transmitting member 51 and the second light transmitting member 52 is a silicone resin or a modified silicone resin. And the 1st fluorescent substance 61 is sialon (Si-Al-O-N).
) It is preferable that it is a system fluorescent substance. The sialon phosphor is relatively hard particles, and the silicone resin or modified silicone resin is a relatively soft resin. Therefore, at the time of forming the first light transmitting member 51 and the second light transmitting member 52, for example, at the time of singulation from the sheet, the sialon fluorescent material protrudes outside the cut end surface of the silicone resin or the modified silicone resin. It is easy to remain, and it is easy to form a convex part in the 1st side 51L and the 2nd side 52L. Therefore, in the third step, the technical significance of scraping the convex portion and leveling the first 'side surface 51LS and / or the second' side surface 52LS evenly becomes high.

As shown in FIGS. 1B and 3B, the wavelength conversion material 60 includes a second phosphor 62.
And the 2nd fluorescent substance 62 is a manganese activation fluoride system fluorescent substance. In such a case, in the third step, the first side surface 51L and the second side surface 52L are preferably scraped with a dry cutting device. Manganese-activated fluoride phosphors emit light with a relatively narrow spectral line width and are preferable from the viewpoint of color reproducibility, but have the property of being easily degraded by water.
Therefore, it is possible to suppress or avoid the deterioration of the manganese-activated fluoride phosphor due to water such as cutting water and / or cooling water by shaving the first side surface 51L and the second side surface 52L with a dry cutting device. .

As shown in FIGS. 1A, 1B, and 3A to 3E, the respective top surfaces of the first light emitting element 31, the second light emitting element 32, the first light transmitting member 51, and the second light transmitting member 52. The visual (front view) shape is
A shape including two long side surfaces extending in a first direction and two short side surfaces extending in a second direction perpendicular to the first direction and shorter than the long side surfaces. In such a case, the first side surface 51L and the second side surface 5
It is preferable that 2L be an elongated side surface extending in the first direction. This is the first translucent member 51
The reason is that managing the thickness of the covering member 70 covering the long side surface of the second light transmitting member 52 has a great technical significance in terms of light extraction efficiency.

In order to obtain the preferred thickness of the covering member 70, the first side 51LS and the second side 52LS
The interval between and should be in the following range. The lower limit value is preferably 0.05 mm or more, and more preferably 0.07 mm or more, from the viewpoint of efficiently extracting light in front of the device while suppressing lateral light leakage. The upper limit is preferably 0.4 mm or less, and 0.32 mm, from the viewpoint of forming the light emitting device thin or small.
It is more preferable that

  Hereinafter, each component of the light emitting device according to the embodiment of the present invention will be described.

(Light-emitting device 100)
The light emitting device is, for example, a light emitting diode (LED;
ode). The light emitting device of Embodiment 1 is a side light emitting type (also referred to as “side view type”), but may be top light emitting type (also referred to as “top view type”). In the side light emitting type light emitting device, the mounting direction and the main light emitting direction are perpendicular to each other. In the top emission type light emitting device, the mounting direction and the main light emitting direction are parallel to each other. The shape as viewed from the front of the light emitting device, that is, the shape viewed from the main light emitting direction can be appropriately selected, but a rectangular shape is preferable in mass productivity.
In particular, the front view shape in the case where the light emitting device is a side light emitting type is preferably a rectangular shape having a longitudinal direction and a short direction. On the other hand, it is preferable that the front view shape in the case where the light emitting device is a top emission type has a square shape. Further, it is preferable that the first light emitting element and the second light emitting element have the same front view shape as the light emitting device.

(Substrate 10, small piece substrate 101)
The substrate is composed of at least a wire and a base for holding the wire. In addition, the substrate may include an insulating protective film such as a solder resist or a coverlay. The same applies to the small substrate.

(Wiring 11, 111)
The wiring is formed on at least the upper surface (front surface) of the substrate, and may also be formed on the inside and / or the side surface and / or the lower surface (rear surface) of the substrate. The wiring preferably includes an element connection terminal portion on which the light emitting element is mounted, an external connection terminal portion connected to an external circuit, and a lead wiring portion connecting between the terminal portions. The wiring can be formed of copper, iron, nickel, tungsten, chromium, aluminum, silver, gold, titanium, palladium, rhodium, or an alloy of these. It may be a single layer or multiple layers of these metals or alloys. In particular, copper or a copper alloy is preferable in terms of heat dissipation. In addition, a layer of silver, platinum, aluminum, rhodium, gold or an alloy of these may be provided on the surface layer of the wiring from the viewpoint of the wettability and / or the light reflectivity of the bonding member.

(Substrate 15, 151)
If the substrate is a rigid substrate, resin or fiber reinforced resin, ceramics, glass,
It can be configured using metal, paper or the like. As resin or fiber reinforced resin, epoxy, glass epoxy, bismaleimide triazine (BT), polyimide etc. are mentioned. As ceramics, aluminum oxide, aluminum nitride, zirconium oxide,
Zirconium nitride, titanium oxide, titanium nitride, or a mixture of these may be mentioned. Examples of the metal include copper, iron, nickel, chromium, aluminum, silver, gold, titanium, and alloys of these. The substrate can be made of polyimide, polyethylene terephthalate, polyethylene naphthalate, liquid crystal polymer, cycloolefin polymer or the like, as long as it is a flexible substrate. Among these substrates, it is particularly preferable to use a substrate having physical properties close to the linear expansion coefficient of the light emitting element.

(Conductive adhesive member 20)
Conductive adhesive members include bumps of gold, silver, copper etc., metal powders containing metal powders of silver, gold, copper, platinum, aluminum, palladium etc. and resin binders, tin-bismuth type,
Any one of solders such as tin-copper, tin-silver, gold-tin, and brazing materials such as low melting point metals
Can be used.

(Light-emitting element 30, first light-emitting element 31, second light-emitting element 32)
The light emitting device comprises at least a semiconductor device structure and in many cases further comprises a substrate. As a light emitting element, an LED chip is mentioned, for example. The front view shape of the light emitting element is preferably a rectangular shape, particularly a square shape or a rectangular shape elongated in one direction, but may be another shape, for example, a hexagonal shape can also enhance the luminous efficiency. The side surface of the light emitting element or the substrate thereof may be perpendicular to the upper surface, or may be inclined inward or outward. The light emitting element preferably has positive and negative (p, n) electrodes on the same side. The number of light emitting elements mounted in one light emitting device may be one or more. The plurality of light emitting elements can be connected in series or in parallel. The semiconductor device structure preferably includes a stack of semiconductor layers, ie, at least an n-type semiconductor layer and a p-type semiconductor layer, with the active layer interposed therebetween. The semiconductor device structure may include positive and negative electrodes and / or an insulating film. The positive and negative electrodes can be composed of gold, silver, tin, platinum, rhodium, titanium, aluminum, tungsten, palladium, nickel or their alloys. The insulating film can be formed of an oxide or nitride of at least one element selected from the group consisting of silicon, titanium, zirconium, niobium, tantalum, and aluminum. The emission peak wavelength of the light emitting element can be selected from the ultraviolet region to the infrared region depending on the semiconductor material and the mixed crystal ratio thereof. As a semiconductor material, it is preferable to use a nitride semiconductor which is a material capable of emitting light of a short wavelength capable of efficiently exciting a wavelength conversion substance. Nitride semiconductor is mainly general formula _{In x Al y Ga 1-x} -y N (0 ≦ x, 0 ≦ y
, X + y 1 1). The light emission peak wavelength of the light emitting element is preferably 400 nm or more and 530 nm or less, more preferably 420 nm or more and 490 nm or less, and more preferably 450 nm or more and 475 nm or less from the viewpoint of light emission efficiency and color mixing relationship with excitation of wavelength conversion substance and the light emission. More preferred. In addition, InAlGaAs semiconductors, InAlGaP semiconductors, zinc sulfide, zinc selenide, silicon carbide and the like can also be used. The substrate of the light emitting device is a substrate for crystal growth which can mainly grow crystals of a semiconductor constituting a semiconductor device structure, but may be a bonding substrate which is joined to a semiconductor device structure separated from the substrate for crystal growth. Since the substrate has a light transmitting property, it is easy to adopt flip chip mounting and to improve the light extraction efficiency. Examples of the base material of the substrate include sapphire, spinel, gallium nitride, aluminum nitride, silicon, silicon carbide, gallium arsenide, gallium phosphorus, indium phosphorus, zinc sulfide, zinc oxide, zinc selenide, diamond and the like. Among them, sapphire is preferred. The thickness of the substrate is, for example, 0.02 mm or more and 1 mm or less, and preferably 0.05 mm or more and 0.3 mm or less in terms of the strength of the substrate and the thickness of the light emitting device.

(Light guiding member 40)
The light guide member bonds the light emitting element and the light transmitting member, and guides the light from the light emitting element to the light transmitting member. As a base material of the light guide member, silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin, or modified resin thereof can be mentioned. Among them, silicone resins and modified silicone resins are preferable because they are excellent in heat resistance and light resistance. Specific silicone resins include dimethyl silicone resin, phenyl-methyl silicone resin,
Diphenyl silicone resin is mentioned. Moreover, the base material of the light guide member may contain the same filler as the base material of the translucent member described later. Hereinafter, the "modified resin" in the present specification includes a hybrid resin.

(Translucent member 50, first translucent member 51, second translucent member 52)
The translucent member is a member provided on the light emitting element and transmitting light emitted from the light emitting element to the outside of the apparatus. The translucent member is made of at least the following base material. Also,
The translucent member can function as a wavelength conversion member by containing the following wavelength conversion materials in a base material. However, the content of the wavelength conversion substance is not essential. Further, as the light transmitting member, it is also possible to use a sintered body of a wavelength converting substance and an inorganic substance such as alumina, or a plate-like crystal of the wavelength converting substance.

(Base material 55 of translucent member)
The base material of the light-transmissive member may be a material having light-transmitting properties with respect to light emitted from the light-emitting element. Here, “translucent” means that the light transmittance at the light emission peak wavelength of the light emitting element is preferably 60% or more, more preferably 70% or more, still more preferably 80% or more Say that. The base material of the translucent member is silicone resin, epoxy resin,
Phenolic resin, polycarbonate resin, acrylic resin, or modified resin thereof can be used. It may be glass. Among them, silicone resins and modified silicone resins are
It is excellent in heat resistance and light resistance, and is preferable. Specific silicone resins include dimethyl silicone resins, phenyl-methyl silicone resins and diphenyl silicone resins.
The translucent member can be configured by forming one of these base materials in a single layer or by laminating two or more of these base materials.

The base material of the translucent member may contain various fillers in the resin or glass.
Examples of the filler include silicon oxide, aluminum oxide, zirconium oxide, zinc oxide and the like. A filler can be used individually by 1 type in these, or in combination of 2 or more types in these. In particular, silicon oxide having a small thermal expansion coefficient is preferable. In addition, by using nanoparticles as a filler, scattering including Rayleigh scattering of blue light of the light-emitting element can be increased, and the amount of use of the wavelength conversion material can be reduced. In addition, with nanoparticles,
The particles have a particle size of 1 nm to 100 nm. Further, "particle size" herein, for example, it is defined by the D _50.

(Wavelength conversion substance 60)
The wavelength conversion material absorbs at least a portion of the primary light emitted by the light emitting element and emits secondary light of a wavelength different from that of the primary light. Thus, the light emitting device can emit mixed color light of primary light and secondary light of visible wavelength, for example, white light. The wavelength conversion substance can be used alone or in combination of two or more of the specific examples shown below.

(First phosphor 61, second phosphor 62)
The first phosphor and the second phosphor can be appropriately selected from the following specific examples. For example, the first phosphor can be a phosphor that emits green to yellow, and the second phosphor can be a phosphor that emits red. As a green-emitting phosphor, yttrium, aluminum,
Garnet-based phosphors (eg, Y ₃ (Al, Ga) ₅ O ₁₂ : Ce), lutetium aluminum garnet-based phosphors (eg Lu ₃ (Al, Ga) ₅ O ₁₂ : Ce), terbium aluminum garnet system Phosphor (eg Tb ₃ (Al, Ga) ₅ O ₁₂ : Ce)
Based phosphors, silicate based phosphors (eg (Ba, Sr) ₂ SiO ₄ : Eu), chlorosilicate based phosphors (eg Ca ₈ Mg (SiO ₄ ) ₄ Cl ₂ : Eu), β sialon based phosphors (eg _{Si 6-z Al z O z} N 8-z: Eu (0 <z <4.2)), SGS phosphor (e.g. SrGa ₂ S _4: Eu), and the like. As yellow-emitting phosphors, α-sialon-based phosphors (for example, M _z (Si, Al) ₁₂ (O, N) ₁₆ (where 0 <z ≦ 2), M is Li, Mg, Ca, Y, And lanthanide elements other than La and Ce, etc. In addition to the above-mentioned green-emitting phosphors, there are also yellow-emitting phosphors. By substituting a portion with Gd, the emission peak wavelength can be shifted to the long wavelength side, and yellow emission is possible.
Among these are phosphors capable of emitting orange light. As a phosphor that emits red light, a nitrogen-containing calcium aluminosilicate (CASN or SCASN) -based phosphor (for example, (Sr, Ca)
AlSiN ₃ : Eu) and the like can be mentioned. In addition, it is a phosphor represented by a manganese-activated fluoride phosphor (general formula (I) A ₂ [M _1-a Mn _a F ₆ ] (however, the above general formula (I
In the above, A is at least one member selected from the group consisting of K, Li, Na, Rb, Cs and NH ₄ , and M is at least one member selected from the group consisting of Group 4 elements and Group 14 elements A kind of element, and a satisfies 0 <a <0.2)). As a representative example of this manganese-activated fluoride phosphor, a phosphor of manganese-activated potassium fluorosilicate (for example, K ₂ S
iF ₆ : Mn).

(Light reflective covering member 70, 701)
From the viewpoint of light extraction efficiency to the front, the light reflective covering member preferably has a light reflectance of 70% or more, more preferably 80% or more, at the light emission peak wavelength of the light emitting element. It is even more preferable that it is% or more. Furthermore, the covering member is preferably white. Therefore, the covering member preferably contains a white pigment in the base material. The covering member passes through a liquid state before curing. The covering member can be formed by transfer molding, injection molding, compression molding, potting or the like.

(Base material 75 of covering member)
As a base material of the covering member, a resin can be used, and for example, a silicone resin, an epoxy resin,
A phenol resin, a polycarbonate resin, an acrylic resin, or modified resin of these is mentioned. Among them, silicone resins and modified silicone resins are excellent in heat resistance and light resistance,
preferable. Specific silicone resins include dimethyl silicone resins, phenyl-methyl silicone resins and diphenyl silicone resins. Also, the base material of the covering member is
You may contain the filler similar to the base material of said translucent member.

(White pigment 77)
White pigments include titanium oxide, zinc oxide, magnesium oxide, magnesium carbonate, magnesium hydroxide, calcium carbonate, calcium hydroxide, calcium silicate, magnesium silicate,
One of barium titanate, barium sulfate, aluminum hydroxide, aluminum oxide and zirconium oxide can be used alone, or two or more of these can be used in combination. The shape of the white pigment is not particularly limited, and may be indeterminate form or crushed form, but spherical form is preferable from the viewpoint of fluidity. In addition, the particle size of the white pigment is, for example, 0.1 μm or more and 0.5 μm
Although the following degree is mentioned, in order to heighten the light reflection and the effect of covering, it is so preferable that it is small. The content of the white pigment in the light-reflecting covering member can be selected appropriately, but from the viewpoint of light reflectivity and viscosity at the time of liquid state, for example, 10 wt% to 80 wt% is preferable, and 20 wt% to 70 wt% More preferably, the content is 30 wt% or more and 60 wt% or less. "Wt%" is weight percent and represents the ratio of the weight of the material to the total weight of the light reflective covering member.

Hereinafter, examples according to the present invention will be described in detail. Needless to say, the present invention is not limited to only the examples shown below.

Example 1
The light emitting device of Example 1 has the structure of the light emitting device 100 shown in FIGS. 1A and 1B, and has a width (horizontal)
A side-emitting LED with 1.8 mm thickness (longitudinal) 0.32 mm and depth 0.70 mm.

The size of the small piece substrate 101 is width (horizontal) 1.8 mm, thickness (longitudinal) 0.32 mm, depth 0
. It is 36 mm. The base 151 is made of BT resin (for example, manufactured by Mitsubishi Gas Chemical Co., Ltd .: HL832N).
It is a rectangular solid piece of SF type LCA). The pair of positive and negative wires 111 is a base 151.
Copper / nickel / gold is laminated from the side. The positive / negative wire pair 111 is exposed left / right from the element connection terminal portion formed on the center side in the lateral direction of the front surface of the base body 151, the lead wiring portion, and the covering member 701 described later. And 151 an external connection terminal portion formed from the left / right end portion of the front surface to the left / right end portion of the rear surface through the side surface. The element connection terminal portion includes a copper layer having a depth of 0.04 mm.

One light emitting element 30 is flip-chip mounted on the element connection terminal portion of the pair of positive and negative wirings 111 via the conductive adhesive member 20. The light emitting element 30 is blue (light emission peak wavelength 452 nm) in which an n-type layer, an active layer and a p-type layer of a nitride semiconductor are sequentially stacked on a sapphire substrate.
2.) A rectangular solid LED chip which can emit light and has a width (width) of 1.1 mm, a thickness (length) of 0.2 mm and a depth of 0.12 mm. The conductive adhesive member 20 is a gold-tin solder (Au: Sn = 79: 21) with a depth of 0.015 mm.

A translucent member 50 is adhered on the light emitting element 30 via the light guiding member 40. The translucent member 50 is a first material of europium activated β-sialon as a wavelength conversion material 60 in a matrix 55 which is a phenyl-methyl silicone resin containing nanoparticles of silicon oxide as a filler.
A width (containing the phosphor 61 and the second phosphor 62 of manganese activated potassium fluorosilicate)
Horizontal) It is a rectangular parallelepiped small piece of 1.21 mm, thickness (longitudinal) 0.24 mm, depth 0.16 mm. In the translucent member 50, from the light emitting element 30 side, a layer composed of the base material 55 and the first phosphor 61, a layer composed of the base material 55 and the second phosphor 62, and a layer composed of the base material 55 are laminated. It consists of. The light guide member 40 is a cured product of dimethyl silicone resin with a depth of 0.005 mm.

A light reflective covering member 701 is formed on the front surface of the small piece substrate 101 so as to surround the entire circumference of the light emitting element 30 and the light transmitting member 50. Cover member 701 has a width (horizontal) 1
. The base material 75 is 35 mm thick (longitudinal) 0.32 mm and contains 60 wt% of titanium oxide as a white pigment 77 in a base material 75 which is a cured product of a phenyl-methyl silicone resin. The covering member 701 directly covers the side surface of the light emitting element 30, the side surface of the light guide member 40, and the side surface of the light transmitting member 50. The front surface of the covering member 701 constitutes substantially the same surface as the front surface of the translucent member 50.

Such a light emitting device of Example 1 is manufactured as follows. In the first embodiment,
A substrate 10 having a structure shown in FIG. 2 is used.

(Step 1)
On the substrate 10, a plurality of light emitting elements including the first light emitting element 31 and the second light emitting element 32 are arranged separately from each other in the longitudinal direction, that is, in the Y direction, and flip chip mounted. More specifically, a paste of gold-tin solder to be the conductive adhesive member 20 is applied on each element connection terminal portion of the wiring 11 of the substrate 10, and each light emitting element is placed thereon, and then reflowed. (Maximum reaching temperature 32
The gold-tin solder may be melted and solidified at 0 ° C.). At this time, the respective light emitting elements are arranged so as to be elongated in the lateral direction, that is, in the X direction, that is, with the long sides facing each other. The distance (center-to-center distance) between the first light emitting element 31 and the second light emitting element 32 is 0.37 mm.

(Step 2)
Next, a plurality of light emitting structures are formed by adhering a translucent member on each light emitting element through a light guiding member. That is, at least the first light transmitting member 51 is bonded to the first light emitting element 31 via the light guiding member 40, and the second light transmitting member 52 is formed on the second light emitting element 32.
Glue through. At this time, the first side surface 51 which is one of the long side surfaces of the first light transmitting member 51.
L and a second side surface 51L, which is one of the long side surfaces of the second light transmitting member 52, are mutually separated and face each other. More specifically, liquid resin to be the light guide member 40 is often applied on the first light emitting element 31 and the second light emitting element 32, and the first light transmitting member 51 and the second light transmitting member are applied thereon. 52
Are placed in each place and then heated in an oven to cure the resin. Here, the first side 51
The distance between L and the second side surface 52L is 0.08 to 0.09 mm. In addition, each translucent member is
A first sheet consisting of a base material 55 and a first phosphor 61, a second sheet consisting of a base material 55 and a second phosphor 61
The sheet | seat and the sheet | seat which bonded together the 3rd sheet | seat which consists of the base material 55 in this order by thermocompression bonding is cut | disconnected and produced in a small piece using the dry cutting apparatus which comprises an ultrasonic cutter as a cutting blade. At this time, the first side surface 51L and the second side surface 52L have a convex portion formed mainly by the presence of the first phosphor 61 of β-sialon.

(Third step)
Next, the long side surface of the translucent member in each light emitting structure is scraped. That is, at least the first side surface 51L of the first light-transmissive member and / or the second side surface 52L of the second light-transmissive member are scraped to expose the 1 'side surface 51LS and / or the 2' side surface 52LS. More specifically,
Cutting tool 90 which is a dicing blade with a thickness of 0.13 mm included in a dry cutting apparatus
With the face of the blade parallel to the X direction, and in the Y direction the blade of the cutting tool 90 is the first
It may be set at a position contacting at least one of the side surface 51L and the second side surface 52L, and scanning in the X direction on the substrate 10. Thereby, the first side 51LS and the second side 52LS
Is scraped and leveled. In addition, after this, the short side surface of the translucent member in each light emitting structure may be scraped in the same manner.

(Step 4)
Next, a light reflective covering member 70 for covering the side surface of each light emitting structure is formed on the substrate 10. More specifically, the covering member 70 is placed on the substrate 10 so that a plurality of light emitting structures aligned in the Y direction are completely embedded with the covering member 70 of one rectangular block using a transfer molding machine.
Molding. Then, the covering member 70 may be ground from above using a grinding apparatus to expose the upper surface of each light transmitting member.

(Step 5)
Finally, the substrate 10 and the covering member 70 between the light emitting structures are cut to separate the light emitting device 100. More specifically, the cutting tool 92, which is a dicing blade with a thickness of 0.05 mm,
The plate surface of the blade is parallel to the X direction, and in the Y direction, the first side surface 51L or the first side 51 '
Set at the center between the side surface 51LS and the second side surface 52L or the 2 'side surface 52LS,
The substrate 10 and the covering member 70 may be cut by scanning in the X direction.

A light-emitting device according to an embodiment of the present invention includes a backlight device for a liquid crystal display, various lighting devices, a large display, various display devices such as advertisements and destination guidance, a projector device,
Furthermore, the present invention can be used as an image reading apparatus in digital video cameras, facsimiles, copiers, scanners, and the like.

10: Substrate (collective substrate)
S: through hole 101: small piece substrate 11: wiring 111: wiring (after singulation)
15 ... base 151 ... base (after singulation)
Reference Signs List 20 conductive adhesive member 30 light emitting element 31 first light emitting element 32 second light emitting element 40 light guiding member 50 light transmitting member 51 first light transmitting member 51 L first side surface 51 LS first Side 52: second light transmitting member 52L: second side 52LS: second side 55: light transmitting member base material 60: wavelength conversion material 61: first phosphor 62: second phosphor 70: light Reflective covering member 701: light reflecting covering member (after singulation)
75: base material of light-reflective coating member 77: white pigment 90, 92: cutting tool 100: light-emitting device

Claims (7)

Flip-chip mounting a plurality of light emitting elements apart from each other on a substrate;
Bonding a light transmitting member including a base material and a manganese activated fluoride fluorescent material as a wavelength conversion material on the light emitting element;
Exposing the side surface of the light transmitting member between the adjacent light emitting elements by grinding after the bonding step;
Forming on the substrate a light reflective covering member for covering the side surface and the upper surface of the light transmitting member;
Removing the covering member covering the upper surface of the light transmitting member to expose the light transmitting member;
And c. Cutting the substrate and the covering member into individualized light emitting devices.   The method for manufacturing a light emitting device according to claim 1, wherein the light transmitting member further includes a β sialon phosphor.   The translucent member is formed by laminating a layer containing the base material and the β-sialon phosphor, a layer containing the base material and the manganese-activated fluoride phosphor, and a layer containing the base material The method of manufacturing a light emitting device according to claim 2.   The method for manufacturing a light emitting device according to claim 1, wherein the base material is a silicone resin or a modified silicone resin.   The manufacturing method of the light-emitting device of Claim 1 including the process of removing also a part of said translucent member, when removing the said coating member which coat | covers the upper surface of the said translucent member.   The method for manufacturing a light emitting device according to claim 1, wherein the one light emitting device after being separated includes a plurality of the light emitting elements.   The method according to claim 1, wherein the light emitting element has an emission peak wavelength of 400 nm or more and 530 nm or less.

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