JP6529812B2 - Exposure device - Google Patents

Description

  The present invention relates to an exposure apparatus for forming a pattern such as a circuit on a surface of a three-dimensional work (exposure object) using photolithography technology, and more particularly to an exposure apparatus capable of exposing a side surface of the three-dimensional work.

  Conventionally, in photolithography technology, a pattern drawn on an exposure mask is projected vertically onto the upper and / or lower surface of a three-dimensional work by parallel light, and a resist or the like applied on the three-dimensional work is exposed and exposed. Portions, or vice versa, that are not exposed are etched away to form a transfer pattern. As an exposure apparatus at that time, generally, a mask aligner for bringing an exposure mask into contact with or in proximity to a light source side of a three-dimensional work, or equal exposure or reduction of a pattern of the exposure mask is repeated step exposure on the three-dimensional work A stepper is used.

  In addition, in some 3D workpieces such as quartz vibrator, not only the upper surface and / or the lower surface of the 3D workpiece, but also a pattern on the side surface, so an exposure apparatus that exposes the side surface of the 3D workpiece vertically Are known. (See, for example, Patent Document 1).

  Further, for example, the light source, the exposure optical system, the three-dimensional work (or three-dimensional work (or three-dimensional work) in order to perform exposure (tilt exposure) by tilting the top of the three-dimensional work from above There is known an exposure apparatus capable of performing inclined exposure by installing at least one of a stage / table on which a workpiece is mounted with respect to the optical axis (see, for example, Patent Document 2).

  Further, for example, there is known an exposure apparatus which moves a blade with a mirror inclined at about 45 ° with respect to the optical axis so as to change the beam 90 ° across the projection beam for exposure (eg, patent document See 3)

  In addition, the principle of a shine proof (film surface and lens viewed from the side) with respect to a camera in which a general film surface (imaging surface), a lens main surface, and a photographing object surface do not intersect in a parallel plane. A bellows type designed based on the principle that the extension line of the object plane (object plane) in focus is also intersected at one point when the main surface is arranged to be inclined so as to intersect at one point of the extension line Large and medium-sized Shine proof cameras are known.

JP 2005-134364 A JP 2005-017273 A Unexamined-Japanese-Patent No. 2006-339634

  However, in order to carry out the inclined exposure as described above, it is necessary to incline the light source of the exposure light and the optical system or to incline and fix the three-dimensional work side, and a complicated device for that purpose is additionally installed. Exposure apparatus becomes larger / complicated / higher cost. In addition, if the surface to be exposed is not a vertical surface but inclined with respect to the exposure light, the focal position varies along the inclination direction of the surface to be exposed, and the control of focusing becomes complicated, and the side surface of the three-dimensional work It becomes difficult to control the irradiation of the exposure light of substantially uniform light intensity. Therefore, when the three-dimensional work is inclined, load on the supporting portion is increased by its own weight including the inclined lower end side, as compared with the case where the three-dimensional work is placed flat on the three-dimensional work placement stage flat. At this time, if the rigidity of the three-dimensional work in the direction of inclination is insufficient, the three-dimensional work will be deformed, and the focal point position will also fluctuate, which may lower the positioning accuracy of the exposure apparatus. When the image of the object surface is formed without deformation by inclining the image formation surface by applying the principle of shine proof, the image (circuit pattern etc.) of the object surface (exposure mask pattern) is shredded. It is necessary to tilt and hold at a predetermined angle according to the proof principle. For that purpose, a dedicated holding means (mask holder etc.) capable of holding the inclination angle at a predetermined angle is required, and the holding means is manufactured at every predetermined angle. As a result, the number of holding means increases and the design and management become complicated, the number of operation steps increases, and the cost also increases.

  The present invention has been made in view of the above problems, and the pattern on the mask is applied to the side surface of the three-dimensional work at an arbitrary angle including the vertical, without tilting the light source of the exposure light, the exposure optical system, or the three-dimensional work. The exposure can be performed, the number of man-hours, time and cost required for side exposure of a three-dimensional work can be suppressed, and the three-dimensional work can be placed flat on the exposure stage surface to suppress a decrease in the positioning accuracy of the exposure apparatus. It is an object of the present invention to provide an exposure method which can use a conventional means for holding an exposure mask.

  In order to achieve the above object, the exposure apparatus of the present invention is a principal ray of illumination light (e.g., a ray passing through the optical axis in the case of the central portion of the optical system, and parallel to the optical axis except in the central portion). A projection exposure apparatus capable of exposing the surface of a three-dimensional work having a surface at an arbitrary angle with respect to a ray passing through the center of the illumination area, the exposure mask pattern being disposed at right angles to the chief ray of illumination light And at least a mirror having a reflection surface for reflecting illumination light having passed through the mask pattern for exposure toward each imaging surface on the plurality of three-dimensional work at a predetermined inclination angle with respect to the chief ray. The exposure mask pattern and the corresponding mirror perform pattern exposure simultaneously on the side surfaces of the plurality of three-dimensional works within the exposable width.

  Preferably, the mask pattern for exposure of the exposure apparatus according to the present invention forms an image of the pattern on the object plane in accordance with the amount by which the pattern on the object plane is stretched and imaged according to each tilt angle of the image plane. It is preferable to reduce in advance the direction in which the film is stretched.

  Preferably, the mirror of the exposure apparatus of the present invention is capable of rotating the reflecting surface.

  Preferably, the mirror of the exposure apparatus of the present invention has a plurality of reflective surfaces, and the mask pattern for exposure has a mask pattern surface corresponding to each reflective surface.

  Preferably, the exposure apparatus of the present invention may be configured to have an illumination blind capable of selecting irradiation light by partially blocking the irradiation light to a plurality of reflecting surfaces.

  Preferably, each reflecting surface of the mirror of the exposure apparatus of the present invention may be directed toward each surface of a three-dimensional work having a plurality of surfaces in different directions so as to be able to reflect the corresponding illumination light.

  Preferably, the exposure mask pattern of the exposure apparatus of the present invention may be arranged in parallel for a plurality of lines, and the corresponding mirrors may be arranged in parallel for a plurality of lines.

  According to the exposure apparatus of the present invention, the mask pattern for exposure disposed at right angles to the chief ray of the illumination light, and the illumination light having passed the mask pattern for exposure at a predetermined inclination angle with respect to the chief ray, By having at least a mirror having a reflection surface to be reflected toward each imaging surface on a plurality of three-dimensional work, man-hours, time and cost necessary for forming an image of a mask pattern on the side surface of the three-dimensional work and exposing Can be suppressed. Further, according to the exposure apparatus of the present invention, even when the mask pattern is formed on the side surface of the three-dimensional work, it is not necessary to hold the three-dimensional work obliquely, and can be placed flat on the exposure stage surface. Therefore, it is possible to suppress the decrease in the positioning accuracy of the exposure apparatus.

It is the schematic which showed the schematic structure of the optical system in a general projection exposure apparatus longitudinally in cross section. It is the schematic which extracted and showed the front and back of the projection lens assembly in the projection exposure apparatus of FIG. It is the schematic which showed the case where the object surface of the micro area | region was provided around each point of A1, A2, A3 on the object surface in FIG. FIG. 4 is a schematic view showing a case where an image of a minute image forming plane in FIG. 3 is formed to be inclined at a predetermined inclination angle. It is a figure which shows a mode that the exposure possible width | variety changes with the height and focal depth of the workpiece | work at the time of side exposure of a workpiece | work. It is the schematic of 1st Embodiment which showed the case where the small image formation surface was image-formed by arbitrary inclination angles by changing the direction with the surface reflection mirror, for the illumination light of the micro area | region of FIG. . 6 is a schematic view of a second embodiment showing that it is possible to reflect light irradiated from a minute object surface by a surface reflection mirror other than the tilt angle in FIG. is there. FIG. 7 is a schematic diagram of a third embodiment showing the configuration of an illumination optical system in the case of selectively switching the supply of illumination light to an arbitrary minute object surface on the object surface in the exposure system configured as shown in FIG. 6. . FIG. 9 is a schematic view of a fourth embodiment showing a configuration in which a plurality of minute object surfaces (masks) of FIG. 8 and a plurality of surface reflection mirrors are integrated. (A) to (f) are XYZ rotation stages in repeated exposure performed when there are a plurality of three-dimensional works on the XYZ rotation stage and arranged according to a predetermined rule in the exposure shown in FIG. 9 It is a figure which shows switching of the illumination light by operation | movement of a, and a lighting blind. (A)-(b) is a figure which shows the example of the shape of several solid work on the XYZ rotation stage 80, and arrangement | sequence. It is a figure which shows the structure in the case of exposing 4 direction side surfaces of several solid work | work with one exposure machine. (A)-(h) is a figure which shows an example of the exposure method to the several aligned three-dimensional work on the XYZ rotation stage 80. FIG. (A) is a figure which shows the case where a plurality of lines of mask patterns are provided in the same direction, and (b) is the figure which shows the case where a plurality of lines corresponding mirrors are provided in the same direction.

  Hereinafter, embodiments of an exposure method for a three-dimensional work, an exposure apparatus, and an exposure mask pattern according to the present invention will be described with reference to the drawings.

<Description of peripheral technology>
FIG. 1 is a schematic vertical cross-sectional view of an optical system in a general projection exposure apparatus for projection exposure such as a stepper. The chief ray 100 is a chief ray of the illumination light 200 that is emitted from the secondary light emitting surface 51 and illuminates the object surface 10. The illumination light 200 emitted from the secondary light emission surface 51 around the chief ray 100 passes through the condenser lens 52 and is an illumination plane which is a plane perpendicular to the chief ray 100 and parallel to the imaging plane 30 by Koehler illumination means. Illuminate 60 evenly. This optical system is a telecentric optical system on the object side. An exposure mask such as a reticle mask on which a pattern to be exposed is drawn is disposed on the illumination surface 60 and becomes an object surface 10 which is a plane perpendicular to the chief ray 100 and parallel to the imaging surface 30. Thus, the illumination plane 60 and the object plane 10 coincide.

  The secondary light emitting surface 51 is an illumination light (exposure light) capable of uniform illumination when light from a light emitting point such as a lamp (light source) of an exposure device (not shown) passes through an optical system such as an integrator. It is a light emitting surface converted. As a light source of illumination light, for example, an output light of a high-pressure mercury lamp that emits i-line (wavelength 365 nm) or g-line (wavelength 436 nm) is collimated by an optical system and output, KrF excimer laser (wavelength 248 nm), ArF An excimer laser (wavelength 193 nm) or the like is used.

  The object plane 10 is a plane that coincides with the illumination plane 60 perpendicular to the chief ray 100, and the exposure mask to be exposed is disposed. The projection lens assembly 20 transmits only the light having a limited numerical aperture for the illumination light 200 between the first lens 21 on the object plane 10 side, the second lens 22 on the imaging plane 30 side, and both lenses. It is designed / manufactured so as to have the restricting diaphragm 23 and to make the optical path lengths of light on any of the paths on the diaphragm 23 the same. The illumination light 200 transmitted through the object plane 10 reaches the projection lens assembly 20, and the projection lens assembly 20 makes the imaging plane 30 a pattern on the object plane 10 perpendicular to the chief ray 100 and parallel to the object plane 10. It is imaged. This optical system is a telecentric optical system on the image side, and forms an image only with light of a limited numerical aperture.

  A first point located near one end of the diameter on the object plane 10 is A1, and a second point located at the center on the object plane 10 and intersecting with the chief ray 100 is A2 on the object plane 10. Let A3 be a third point located near the other end of the diameter of. The chief ray 110 is a chief ray of the first illumination light 210 emitted from the first point A 1 on the object plane 10 and imaged at the first point A 1 ′ on the corresponding imaging plane 30. Similarly, the chief ray 120 is a chief ray of the second illumination light 220 emitted from the second point A2 on the object plane 10 and imaged at the second point A2 ′ on the corresponding imaging plane 30, The chief ray 130 is a chief ray of the third illumination light 230 emitted from the third point A3 on the object plane 10 and imaged at the corresponding third point A3 'on the imaging plane 30.

  FIG. 2 is a schematic view showing the front and the rear of the projection lens assembly in the projection exposure apparatus of FIG. The point D1 is a point at one end of the diameter at the aperture of the diaphragm. The point D2 is a central point that intersects with the chief ray 120 in the aperture plane of the stop 23, and the chief ray 110 and the chief ray 130 also diagonally intersect with this point D2. The point D3 is a point at the other end of the diameter (including the point D1) at the opening of the diaphragm 23.

  The first illumination light 210 is emitted from the first point A1 and imaged via the projection lens assembly 20 to a first point A1 'on the corresponding imaging surface 30. Similarly, the second illumination light 220 is emitted from the second point A 2, is imaged at the second point A 2 ′ on the corresponding imaging plane 30 through the projection lens assembly 20, and the third illumination light 230 Are emitted from the third point A3 and imaged through the projection lens assembly 20 to the third point A3 'on the corresponding imaging plane 30.

  The illumination light in the projection lens assembly 20 will now be described in more detail. The illumination light emitted from the point A 1 on the object plane 10 passes through the first lens 21 on the object side in the projection lens assembly 20 and reaches the diaphragm 23. The diaphragm 23 restricts the passing illumination light so that only the light in the diameter range of the points D1 to D3 can pass and the other areas can not pass. Therefore, with this diaphragm 23, only the light with a limited numerical aperture passes through the diaphragm 23 as the illumination light emitted from the points A 1, A 2 and A 3 on the object plane 10.

  Of the illumination light from the point A1 on the object plane 10 at the aperture of the diaphragm 23, the illumination light passing through the chief ray 110 passes a point D2 at which the chief ray 110 intersects the central portion of the aperture of the diaphragm 23. The remaining illumination light passing through the aperture 23 passes between one end (point D1) of the aperture 23 and the other end (point D3). Similarly, the illumination light from the points A2 and A3 on the object plane 10 passes through the chief ray 110 and passes through the point D2, and the remaining illumination light passes between the point D1 and the point D3.

  As shown in FIG. 2, the optical system on the object side of the projection lens assembly 20 has illumination light passing through a point D2 which is a central portion of the diaphragm 23 at points A1, A2 and A3 on the object plane 10 The optical system passing the object plane 10 perpendicularly, that is, an object-side telecentric optical system is formed. Generally, an object-side telecentric optical system is often configured as described above. Furthermore, the illumination light having passed through the stop 23 passes through the second lens 22 in the projection lens assembly 20, is emitted from the projection lens assembly 20, and is coupled to points A1 ′, A2 ′, A3 ′ on the imaging surface 30. Image At this time, since the illumination light is limited by the diaphragm 23, an image is formed with a certain numerical aperture. In particular, in many cases, the illumination light passing through the center D2 of the aperture stop 23 is an optical system that is perpendicular to the imaging plane at each point A1 ', A2' and A3 ', that is, an image side telecentric optical system.

  When the projection lens assembly 20 focuses the illumination light from the point A1 on the object plane 10 to the point A1 ′ on the imaging plane 30, the illumination light passing through any path of the points D1, D2 and D3 on the stop 23 Even light is designed and manufactured so that each optical path length is the same. Similarly, in the case of imaging from A2 to A2 'and from A3 to A3', the same optical path length is obtained when passing any path of points D1, D2 and D3 on the diaphragm 23. Here, the illumination light emitted from the point A1 passes through one of the paths D1, D2 and D3 and passes through any path of the points D1, D2 and D3 on the aperture stop 23 to form an image at the point A1 ′. Since each optical path length is the same even for illumination light, it is referred to as “optical path length 1”. Similarly, the illumination light emitted from the point A2 and imaged at the point A2 'is "optical path length 2", and the illumination light emitted from the point A3 and imaged at the point A3' is "optical path length 3". Then, the following equation holds for each of the optical path lengths 1 to 3 passing through any one of D1, D2, and D3 on the aperture stop 23.

Optical path length 1: A1D1A1 '= A1D2A1' = A1D3A1 '(1)
Optical path length 2: A2D1A2 '= A2D2A2' = A2D3A2 '(2)
Optical path length 3: A3D1A3 '= A3D2A3' = A3D3A3 '(3)

  Furthermore, when the object plane 10 is a plane, the imaging plane 30 is a plane, and the condition that the object plane 10 and the imaging plane 30 are parallel is satisfied, optical path length 1 = optical path length 2 = optical path length 3 All optical path lengths from the plane 10 to the imaging plane 30 are approximately equal. Also, when the optical path lengths are not equal, that is, the reason why the minute area optical path length 1, the optical path length 2 and the optical path length 3 in the points A1, A2 and A3 on the object plane 10 are minutely different on the plane is For example, in the first lens 21 and the second lens 22 of the projection lens assembly 20, there is minute curvature of field in the so-called optical aberration.

  FIG. 3 is a schematic view showing a case where an object plane of a minute area is provided around each of points A1, A2, and A3 on the object plane 10 in FIG. For example, a circular minute plane area is set around the point A1 on the object plane 10, and points B1 and C1 are set at both ends of one diameter passing through the point A1 in the minute plane area. Then, a minute plane region perpendicular to the chief ray 110 including the diameter B1A1C1 on the object plane 10 is set as a first minute object plane 11. Similarly, on the imaging surface 30 side, for example, a circular micro flat region is set around the point A1 'on the imaging surface 30, and both ends of one diameter passing the point A1' in the micro flat region Set points B1 'and C1'. Then, a minute plane region perpendicular to the chief ray 110 is set to include the diameter B1'A1'C1 'on the imaging plane 30, and the first minute imaging plane 31 is obtained. Then, the first telecentric light 310 that has passed through the first minute object surface 11 forms an image on the first minute image formation surface 31 via the projection lens assembly 20.

  Similarly, the second minute object surface 12 including the diameters B2A2C2 and the third minute object surface 13 including the diameters B3A3C3 are set around the points A2 and A3 on the object surface 10, respectively, and the points on the imaging surface 30 A second minute object surface 32 including a diameter B2'A2'C2 'and a third minute object surface 33 including a diameter B3'A3'C3' are set around A2 'and A3', respectively. Then, the second telecentric light 320 which has passed through the second minute object surface 12 forms an image on the second minute imaging surface 32 through the projection lens assembly 20, and the third telecentric light which has passed through the third minute object surface 13. The light 330 is imaged on the third minute imaging surface 33 through the projection lens assembly 20.

  At this time, if the curvature of field of the projection lens assembly 20 is so small that it can be ignored, the following equation holds for each of the optical path lengths 4 to 6 at least passing through the point D2 on the stop 23.

Optical path length 4: A1D2A1 '= B1D2B1' = C1D2C1 '(4)
Optical path length 5: A2D2A2 '= B2D2B2' = C2D2C2 '(5)
Optical path length 6: A3D2A3 '= B3D2B3' = C3D2C3 '(6)

  FIG. 4 is a schematic view showing a case where the micro image forming surface is inclined at a predetermined inclination angle and the image is formed without inclining the micro object surface in FIG. In the present specification, the inclination angle is not the inclination angle with respect to the horizontal plane but the inclination angle with respect to the chief ray unless otherwise specified. In the case of forming an image by tilting this minute imaging plane, the imaging performance including the focal depth of the projection lens assembly 20 is satisfied. More specifically, for example, the first minute image forming surface 31a is imaged with the virtual first minute image forming surface 31z inclined at a predetermined inclination angle θ1. Similarly, the second minute image forming surface 32a is imaged with the virtual second minute image forming surface 32z inclined at a predetermined inclination angle θ2, and the third minute image forming surface 33a is virtual third minute at a predetermined inclination angle θ3. The image is formed by inclining the imaging surface 33z. However, in the case of FIG. 4, where the image of the object plane is imaged on each virtual imaging plane which is originally imaginary, it is stretched in the inclination direction according to each inclination angle of the actual imaging plane. Image will be distorted.

  In order to avoid this, the pattern on the object plane is reduced in advance in the direction in which it is drawn at the time of imaging, in accordance with the amount of the pattern on the object plane being stretched and imaged in accordance with each tilt angle of the imaging plane. It becomes possible to cope by forming it. The following pattern of the object plane is previously reduced in the direction in which it is stretched at the time of imaging unless otherwise specified.

  5A and 5B, the angle θ of the workpiece 71 with respect to the illumination light (exposure light) 200 at the time of exposure of the side surface 31a of the workpiece 71, the height h of the workpiece 71, and the range 400 of the focal depth D; It is a figure which shows a mode that exposure possible width W changes by this. FIG. 5C shows that by making the angle θ of the illumination light (exposure light) 200 narrower, side exposure becomes possible even when the distance w2 between the workpieces 71 is narrow. Further, in FIG. 5C, it can be seen that the exposable width W also varies depending on the width w1 of each work and the interval w2 of each work 71.

The reduction of the illumination light quantity can be obtained as follows, for example, assuming that the original light quantity is 100 mW based on the case where the angle θ with respect to the illumination light (exposure light) 200 is 90 °, ie, at a right angle.
(1) In the case of θ = 90 °: 100 × sin 90 ° = 100 mW
(2) In the case of θ = 45 °: 100 × sin 45 ° = 70 mW
(3) In the case of θ = 30 °: 100 × sin 30 ° = 50 mW

Exposure time t ∝ (1 / sin θ)
Elongation of dimension E ∝ (1 / sin θ)
Assuming that sinnθ at the center point of the possible exposure width W is δ,
δ = (θ / 2) / cos θ
Exposure width W = 2 (δ−h / 2) / tan θ

D = I (0.5λ) / (NA) ↑ 2
D = R / k (NA) 2 2 ... where (k: 0.6 to 0.7)
When λ is 0.365 nm and NA is 0.04, limiting resolution R: 5 μm, focal depth D: ± 100 μm
Limiting resolution R: 10 μm, depth of focus D: ± 200 μm
Limiting resolution R: 20 μm, depth of focus D: ± 400 μm
Critical resolution R: 30 μm, depth of focus D: ± 800 μm
As the critical resolution R increases, the depth of focus D also increases.

First Embodiment
In FIG. 6, by changing the direction of the illumination light in the minute area of FIG. 4 with the surface reflection mirror, it is possible to convert the inclination angle of the minute image forming plane into an arbitrary inclination angle and form an image It is the outline figure of 1st execution form which showed that there is. More specifically, in FIG. 6, illumination light emitted from a minute area of the object plane 10 such as the first minute object plane 11, the second minute object plane 12, the third minute object plane 13 and the like as shown in FIG. The direction of the illumination light after passing through the projection lens assembly 20 is changed by the surface reflection mirrors 41, 42, 43, so that the first minute image forming plane with an inclination angle of any inclination angle such as vertical or horizontal. 31b (inclination angle at which virtual first micro imaging surface 31z is inclined is vertical), second micro imaging surface 32b (inclination angle at which virtual second micro imaging surface 32z is inclined is horizontal), third micro imaging surface It shows that it is possible to form an image on 33 b (the inclination angle at which the virtual third minute imaging surface 33 z is inclined is vertical).

  Also in the case of the present embodiment, the pattern of the object surface is made to correspond to the amount of distortion and imaging so as to be extended in the inclination direction according to each inclination angle of the actual imaging surface. The pattern of the surface is formed by reducing the size and shape in advance by the corresponding amount in the direction in which the pattern is drawn at the time of imaging. The reduction of the pattern on the object plane in the direction in which it is drawn at the time of imaging is the same as in all the following embodiments unless otherwise specified.

  Hereinafter, in order to facilitate the description, it is assumed that the magnification β = 1 of the projection lens assembly 20 in FIG. In FIG. 6, in the case of forming an image on the first minute image formation surface 31b which is a vertical surface, for example, the inclination angle θ1 ′ ′ of the first surface reflection mirror 41 is set to − (θ1) /2=−22.5°. Thus, it is possible to form an image by the irradiation light from the upper left diagonally.When forming an image on the third minute image forming surface 33b which is a vertical surface, for example, the inclination angle θ3 ′ ′ of the third surface reflection mirror 43 By setting − (θ3) /2=+22.5°, it is possible to form an image by irradiation light from the upper right side. In the case of forming an image on the second minute image forming surface 32b which is a horizontal surface, for example, by setting the inclination angle θ2 ′ ′ of the second surface reflection mirror 42 = − (θ2) /2=+22.5°, the upper right diagonal It can be imaged by the irradiation light from

Second Embodiment
FIG. 7 illustrates that the irradiation light from the first to third minute object surfaces 11 to 13 in FIG. 6 is reflected by the first to third surface reflection mirrors 41 to 43 at a predetermined inclination angle θ1 ′ ′ = ± 22.5 ° and the vertical plane A schematic view of a second embodiment showing that it is possible to form an image on the minute image forming surfaces 31b to 33b of any of the above using a surface reflection mirror other than the predetermined inclination angle θ 1 ′ ′ = ± 22.5 °. It is. Also in FIG. 7, the magnification β of the projection lens assembly 20 is set to 1 in order to facilitate the description.

  In FIG. 7, in the case of forming an image on the first minute image formation plane 31c which is a vertical plane, for example, the inclination angle θ1 ′ ′ of the first surface reflection mirror 41c is set to − (θ1) /2=−22.5°. In the case of imaging on the third minute imaging surface 33c which is a vertical plane, for example, the inclination angle θ3 ′ ′ of the third surface reflection mirror 43c is By setting − (θ3) / 2 = −30 °, an image can be formed by the irradiation light from the upper left side. In the case of forming an image on the second minute image forming surface 32c which is a horizontal surface, for example, by setting the inclination angle θ2 ′ ′ of the second surface reflection mirror 42c = − (θ2) / 2 = −15 °, It is possible to form an image by irradiation light of

Third Embodiment
FIG. 8 is a third embodiment showing the configuration of the illumination optical system in the case where the supply of illumination light to an arbitrary minute object surface on the object surface in the exposure system configured as shown in FIG. 6 is selectively switched. FIG. A general illumination optical system having a secondary light emitting surface 51, a condenser lens 52 and the like basically shown in FIG. 1 may be used to supply the general illumination light in FIG. In order to switch the supply of illumination light (exposure light) to the micro object surface, the illumination light to other than the target micro object surface is blocked on the light source (secondary light emitting surface 51) side of the object surface 10 in the exposure system; An illumination blind 53 of a partial light blocking mechanism having an illumination area selection opening 54 capable of supplying illumination light only to the target micro object plane is used. The illumination blind 53 moves the position of the illumination area selection opening 54 by means of a control device and a drive device (not shown) to connect the first minute image forming surface 31b, which is a vertical surface, with illumination light from the upper left side. An image and an image formed on the third minute image forming surface 33b, which is a vertical plane by the irradiation light from the upper right, and an image formed on the second small image forming surface 32b, which is the horizontal surface by the irradiation light from the upper right It is possible to switch and expose.

  If the object plane is horizontal as shown in FIG. 1, the object plane 10 = illumination plane 60, and on the minute object plane 11 as shown in FIG. One minute illumination surface 61 corresponds. Similarly, the minute object plane 12 corresponds to the second minute illumination plane 62 which is the same plane as the minute object plane 12 and is horizontal, and the minute object plane 13 is the same plane as the minute object plane 13 and horizontal The third slight illumination surface 63 corresponds. In FIG. 8, the illumination blind 53 supplies illumination light only to the first minute illumination surface 61 at the illumination area selection opening 54, and other than the first minute illumination surface 61 (for example, the second minute illumination surface 62, the third minute The illumination light to the illumination surface 63 etc. is blocked. Therefore, in the case shown in FIG. 8, by switching the illumination blind 53, only the first minute illumination surface 61 is irradiated, so that the first telecentric light that has passed only the pattern on the minute object surface 11 (mask). The light 310 from the upper left side can be imaged on the first minute image forming plane 31 b which is a vertical plane through the projection lens assembly 20.

  Similarly, by switching only the second minute illumination surface 62 by switching the illumination blind 53, the second telecentric light 320 that has passed only the pattern on the minute object surface 12 (mask) is projected to the projection lens assembly 20. The second minute image forming surface 32b, which is a horizontal surface, can be imaged by the irradiation light from the upper right side. Furthermore, by switching the illumination blind 53, only the third minute illumination surface 63 is illuminated, so that the third telecentric light 330 that has passed only the pattern on the minute object surface 13 (mask) passes through the projection lens assembly 20. Thus, it is possible to form an image by irradiation light from the upper right side obliquely to the third minute image forming surface 33b which is a vertical surface. By performing control to switch the illumination blind 53 in this way together with control of the XYZ rotation stage of a general projection exposure apparatus, for example, a rectangular parallelepiped (hexahedron) shape, or a flat plate having a thickness such as having a side surface It is possible to project and expose a circuit pattern or the like on a mask on the surface of the four side surfaces in addition to the upper surface of a three-dimensional work, and to form the circuit pattern or the like by a photolithography method.

Fourth Embodiment
FIG. 9 is a schematic view of a fourth embodiment showing a configuration in which the first to third minute object surfaces 11 to 13 (mask) of FIG. 8 and the first to third surface reflection mirrors 41b to 43b are integrated. It is. The integration of parts is considered in design, in order to make the control easy / efficient and to reduce the number of parts when the present invention is applied to an actual projection exposure apparatus.

  In FIG. 9, the mask 15 is provided at a position corresponding to the object surface 60 (including the first minute illumination surface 61, the second minute illumination surface 62, the third minute illumination surface 63, etc.) of FIG. The same first mask pattern 16 and third mask pattern 18 are integrally held at positions corresponding to the eight first minute object surfaces 11 and the third minute object surfaces 13, and are not shown in FIG. Similar second mask pattern 17 and fourth mask pattern 19 are held integrally at positions orthogonal to them as shown in FIG. Each of the mask patterns 16 to 19 has a line-shaped pattern, and in FIG. 9, a mask pattern 16 which can be imaged on the first image forming plane 36 which is a vertical plane by the irradiation light from the upper left side. The third mask pattern 18 capable of forming an image on the third imaging surface 38, which is a vertical surface, by the irradiation light from the upper right side is held by the mask 15.

  The four-faced reflecting mirror 45 is a quadrangular pyramid having four sides cut from the upper part of the quadrangular pyramid, and is disposed coaxially with the chief ray 120, and the first to third surface reflections of FIG. The first reflection surface 46b and the second reflection surface 47b are integrally provided at the same angle as the mirrors 41b to 43b, and the third reflection surface 48b and the fourth reflection surface 49b shown in FIG. 12 and not shown in FIG. Mirror.

  The first three-dimensional work 71 has, for example, upper and lower surfaces and four side surfaces (a first image forming surface 36, a second image forming surface 37, a third image forming surface 38, a fourth image forming surface 39) perpendicular to them. It is a cuboid (hexahedron), and a circuit pattern or the like on a mask is projected and exposed on each surface, and the circuit pattern or the like can be formed by a photolithography method.

  The XYZ rotation stage 80 is a stage on which the first three-dimensional work 71 or the like exposed by the exposure apparatus is placed and positioned for exposure. For example, in a state where the three-dimensional work is placed, an X direction, a Y direction, It is an XYZ rotation stage that is movable in the Z direction and is further rotatable. Therefore, the first three-dimensional work 71 is held on the XYZ rotation stage 80 and is movable in the XYZ rotation direction. In the case of side exposure of the first three-dimensional work 71 using the four-surface reflecting mirror 45, it is usually necessary to bring the first three-dimensional work 71 close to the projection lens assembly 20 by the chief ray being inclined and incident. It is lifted in the Z direction.

  The alignment of the position and the like of the first three-dimensional work 71 is adjusted by control means such as a computer (not shown) based on the position information detected by the alignment camera 90 installed near the projection lens assembly 20.

  In the case shown in FIG. 9, by switching the illumination blind 53, only the first mask pattern 16 on the mask 15 is irradiated to project the first telecentric light 310 that has passed only the first mask pattern 16. The light from the upper left can be imaged on the first image forming surface 36 of the first three-dimensional work 71, which is a vertical surface, through the lens assembly 20. Also in the case of this embodiment, when the mask patterns 16 and 18 and the imaging surfaces 36 and 38 can be imaged even when inclined, the imaging performance including the focal depth of the projection lens assembly 20 is It holds in the range to be saved.

  Furthermore, in the case shown in FIG. 9, the illumination blind 53 is similarly switched, and the position of the first three-dimensional work 71 is aligned by the XYZ rotation stage 80, so that only the third mask pattern 18 is irradiated. The third telecentric light 330 which has passed only the three mask pattern 18 can be imaged on the third image forming surface 38 of the first three-dimensional work 71 as the vertical surface by the irradiation light from the upper right side.

  Further, as shown by referring to FIG. 12 in addition to FIG. 9, the illumination blind 53 is similarly switched, and by aligning the position of the first three-dimensional work 71, only the second mask pattern 17 is irradiated. As a result, the second telecentric light 320 that has passed only the second mask pattern 17 can be imaged on the second image forming surface 37, which is a vertical surface, by the irradiation light from the obliquely upper side, in the same manner. By irradiating only the mask pattern 19, the fourth telecentric light 340 which has passed only the fourth mask pattern 19 can be imaged on the fourth image forming surface 39 which is a vertical surface by the irradiation light from the obliquely upper side. .

  For example, in the case of forming an image on the first image forming surface 36 which is the left side surface of the first three-dimensional work 71 in FIG. The XYZ rotation stage 80 is an alignment camera so that the first imaging surface 36 on the left side of the first three-dimensional work 71 can be imaged by the irradiation light from the upper left side reflected by the first reflection surface 46 b. Move based on 90 position information. At the same time, the illumination blind 53 is switched to illuminate only the first mask pattern 16 on the mask 15. Thereafter, the shutter of the lamp is operated to light so that the secondary light emitting surface 51 has a desired exposure amount. Thereby, only the first mask pattern 16 can be exposed to the first imaging surface 36 which is the vertical left side surface of the first three-dimensional work 71.

  Next, in the case of forming an image on the third imaging surface 38 which is the right side surface of the first solid work 71 in FIG. The XYZ rotation stage 80 is aligned so that the third imaging surface 38 on the right side of the first three-dimensional work 71 can be imaged by the irradiation light from the upper right, reflected from the second reflection surface 47 b of It moves based on the position information of the camera 90. At the same time, the illumination blind 53 is switched to illuminate only the third mask pattern 18 on the mask 15. Thereafter, the shutter of the lamp is operated to light so that the secondary light emitting surface 51 has a desired exposure amount. Thereby, only the third mask pattern 18 can be exposed to the third imaging surface 38 which is the vertical right side surface of the first three-dimensional work 71.

  10 (a) to 10 (f) are rows when the first three-dimensional work 71 on the XYZ rotation stage 80 in the exposure shown in FIG. 9 is plural and arranged according to a predetermined rule. It is a figure which shows operation | movement of the XYZ rotation stage 80 in switching step-and-repeat exposure, and the switching of the illumination light by the illumination blind 53. FIG. A first three-dimensional work 71, a second three-dimensional work 72, and a third three-dimensional work 73 are arranged at predetermined intervals on the XYZ rotation stage 80 of FIGS. 10 (a) to 10 (f).

  First, in FIG. 10A, only the first mask pattern 16 passes through the first imaging surface 36, which is the vertical left side surface of the first three-dimensional work 71 at the left end on the XYZ rotation stage 80. The telecentric light 310 is emitted to expose the first imaging surface 36 of the first three-dimensional work 71. Next, in FIG. 10B, the XYZ rotation stage 80 is moved to the left by a predetermined distance corresponding to the distance between the respective workpieces, and the first imaging which is the vertical left surface in the second three-dimensional workpiece 72 in the middle The first telecentric light 310 which has passed only the first mask pattern 16 is irradiated to the surface 36, and the first imaging surface 36 of the second three-dimensional work 72 is exposed. Further, in the next FIG. 10 (c), the XYZ rotation stage 80 is once again moved to the left by a predetermined distance equivalent to the distance between each work, and the first left side which is the vertical left side of the third solid work 73 at the right end. The first telecentric light beam 310 which has passed only the first mask pattern 16 is irradiated to the imaging surface 36, and the first imaging surface 36 of the third three-dimensional work 73 is exposed. The above operation is repeated by the step-and-repeat exposure by the number of three-dimensional work arranged in one row, and when the last first imaging surface 36 of the three-dimensional work arranged at the end of one row is exposed, the last three-dimensional The XYZ rotation stage 80 is moved to the left to a position where the third telecentric light 330 passing only the third mask pattern 18 can be irradiated with respect to the third imaging plane 38 which is the vertical right side surface of the work. This movement may be greater than the movement distance during step and repeat.

  Next, in FIG. 10D, the third imaging surface 38, which is the vertical right side surface of the third solid work 73 at the right end on the XYZ rotation stage 80, passes only the third mask pattern 18 The 3 telecentric light 330 is emitted, and the third imaging surface 38 of the third three-dimensional work 73 is exposed. Next, in FIG. 10E, the XYZ rotation stage 80 is moved to the right by a predetermined distance corresponding to the distance between the respective workpieces, and the third imaging which is the vertical right surface in the middle second three-dimensional workpiece 72 The third telecentric light 330 which has passed only the third mask pattern 18 is irradiated to the surface 38, and the third imaging surface 38 of the third three-dimensional work 73 is exposed. Further, in the next FIG. 10 (f), the XYZ rotation stage 80 is once again moved to the right by a predetermined distance equivalent to the distance between each work, and the third right side surface of the first solid work 71 at the left end is the third. The third telecentric light 330 passing only the third mask pattern 18 is irradiated to the imaging surface 38, and the third imaging surface 38 of the first three-dimensional work 71 is exposed. The above operation is repeated by the step-and-repeat exposure by the number of three-dimensional work arranged in one row, and when the last third imaging surface 38 of the three-dimensional work arranged at the end of one row is exposed, the next three-dimensional work Move to the column of, repeat the above process, and terminate the process when there are no unprocessed columns.

  11 (a) and 11 (b) are diagrams showing examples of the shape and arrangement of a plurality of three-dimensional works on the XYZ rotation stage 80. FIG. In FIG. 11A, the three-dimensional works 71a to 78a repeatedly arranged at predetermined regular intervals on the XYZ rotation stage 80 are regular cubes repeatedly arranged at intervals at which step-and-repeat exposure is possible. It is desirable for performing step-and-repeat exposure that the exposure surfaces of a regular cube are arranged on a straight line. In FIG. 11B, the three-dimensional works 71b to 76b repeatedly arranged at predetermined regular intervals on the XYZ rotation stage 80 are rectangular bodies, and a regular cube repeatedly arranged at intervals at which step-and-repeat exposure is possible. In particular, in order to perform the step-and-repeat exposure, it is desirable that the exposure surfaces of the regular cubes are arranged in a straight line.

  FIG. 12 is a view showing the configuration in the case where the four directional side surfaces of a plurality of three-dimensional works 71c to 75c are exposed by one exposure machine. On the mask 15, first to fourth mask patterns 16 to 19 in four directions are disposed at an inclination angle of 45 ° in directions necessary for each as shown in FIG. It is desirable that a plurality of identical patterns be provided in a row so that each mask pattern 16 to 19 is a horizontally long rectangle and can be exposed on the same side of a plurality of workpieces arranged in a row. The surface reflecting mirror 45 below the projection lens assembly 20 is in the shape of a square frustum as described in FIG. 9 and each surface 22 relative to the chief ray 120 or an axis parallel thereto, It is processed to be 5 ° (67.5 ° with respect to the horizontal plane). Each portion is configured such that the first mask pattern 16 to the fourth mask pattern 19 are projected on the first image forming surface 36 to the fourth image forming surface 39. The first mask pattern 16 to the fourth mask pattern 19 in the four directions can be individually shielded from light by an illumination blind (noted 53 in FIG. 8 or 9). As shown in FIG. 12, a mask pattern in four directions is disposed on the mask 15, and the surface reflection mirror 45 capable of reflecting in four directions and the XYZ rotation stage 80 are appropriately controlled to perform step-and-repeat exposure in four directions. Thus, it is possible to expose the side surfaces in the four directions of the three-dimensional work 71c to 75c with a single exposure machine, and it is possible to reduce the cost and the number of steps of the exposure.

  FIG. 13 is a view showing a method of performing batch exposure by step-and-repeat exposure on side surfaces in the same direction of a plurality of workpieces aligned by the mask pattern. In FIG. 13A, exposure is performed from illumination light from the obliquely upper left as shown in FIG. 9, FIG. 10, and FIG. Next, as shown in FIG. 13 (b), exposure is performed from the left upper end to the right side surface 420 of each work in the second column from the illumination light from the diagonally upper left, and further, FIG. As shown in), exposure is performed from illumination light from the diagonally upper left on the right side surface 430 of each work in the third column from the left end in the drawing. The same operation is repeated for the next column, and finally, as shown in FIG. 13 (d), the illumination light from the upper left obliquely to the right side surface 490 of each work of the first column from the right end in the figure. Exposure is performed to perform exposure on the right side surface of all the workpieces in the drawing.

  Thereafter, in FIG. 13 (e), exposure is performed from illumination light from obliquely above on the front side surface 510 of each workpiece in the first row from the upper end in the drawing as shown in FIG. 9, FIG. 10 and FIG. Do. Next, as shown in FIG. 13 (f), exposure is performed from illumination light from obliquely above on the front side surface 520 of each work in the second row from the upper end in the drawing, and then, FIG. As shown in g), exposure is performed from the upper end in the drawing to the near side surface 530 of each work in the third row from the illumination light from obliquely above. The same operation is repeated for the next row, and finally, as shown in FIG. 13 (h), illumination from above on the oblique side to the front side surface 590 of each work in the first row from the lower end in the figure. Exposure is performed using light, and exposure is performed on the front side of all the workpieces in the drawing. By repeating this operation on the remaining surface of each work, exposure can be performed on all the side surfaces of each work.

Fifth Embodiment
FIG. 14 is a view showing that by providing a plurality of lines of mask patterns and further providing a plurality of corresponding mirrors in the same direction, exposure of a line by the mask pattern can be performed in a plurality of lines at one time. As shown in FIG. 14 (a), third mask patterns 18a, 18b and 18c for right side exposure of the work are arranged in parallel on the mask 15, and similarly, first mask patterns 16a, 16b and 16c for left side exposure of the work Arrange in parallel. Further, as shown in FIG. 14B, the first mirrors 41c, 42c and 43c for exposing the left side face of each work are arranged in parallel, and the third mirrors 41d, 42d and 43d for exposing the right side face of each work Arrange in parallel. With such a configuration, it is possible to perform exposure of one row by the illumination light 200 that has passed the mask pattern in a plurality of rows at once, reduce the number of steps and repeat, and shorten the exposure time. it can.

  Thus, in the exposure apparatus of each embodiment of the present invention, the pattern on the mask is exposed on the side surface of the three-dimensional work of any angle including vertical, without tilting the light source of the exposure light, the exposure optical system, or the three-dimensional work. As a result, man-hours, time, cost, and the number of masks necessary for exposure can be suppressed, and a three-dimensional work can be placed flat on the exposure stage surface, and deterioration in the positioning accuracy of the exposure apparatus can be suppressed. .

  In addition, by applying the present invention as described above, it becomes possible to simultaneously expose four side faces and further upper face exposure in one three-dimensional work set, make it possible to perform step & repeat exposure in the in area, and inclining exposure on the side face Since it is possible to thin the minimum line width of the lens, to use an existing projection exposure lens, and to cope with a large wafer even with the existing projection exposure lens, it is possible to suppress a cost increase.

10 object plane (perpendicular to the chief ray),
11 first minor object plane (perpendicular to chief ray),
11a (first inclination angle θ1) first minute object surface,
11b, 11c (first inclination angle-θ1) first minute object surface,
12 second minor object plane (perpendicular to chief ray),
12a (for a second inclination angle θ2) a second minute object surface,
12 b Second fine object surface (second tilt angle −θ 1),
12c Second fine object surface (with a second tilt angle θ2),
13 3rd minimal object plane (perpendicular to chief ray),
13a Third fine object surface (with a third tilt angle θ3),
13b Third fine object surface (for third tilt angle θ1),
13c Third fine object surface (for third tilt angle θ3),
15 masks,
16 first mask pattern,
17 second mask pattern,
18 Third mask pattern,
19 fourth mask pattern,
20 projection lens assembly,
21 1st lens,
22 2nd lens,
23 stops,
30 imaging planes,
31 1st minute imaging plane,
31a (with a first inclination angle θ1 ′) a first minute imaging surface,
31b, 31c (first reflection angle θ1 ′ ′) first minute imaging surface,
32 second minute imaging plane,
32a (with a second inclination angle θ2 ') a second minute imaging surface,
32b (with a first reflection angle θ1 ′ ′) a second minute imaging surface,
32c (second reflection angle θ2 ′ ′) second minute imaging surface,
33 3rd minute imaging plane,
33a third minute imaging surface (with a third inclination angle θ3 '),
33b A third minute imaging surface (reflected by a mirror (reflection surface) at a first reflection angle θ1 ′ ′),
33c A third minute imaging surface (reflected by a mirror (reflection surface) at a third reflection angle θ3 ′ ′),
34b The fourth minute imaging surface (reflected by the mirror (reflection surface) at the first reflection angle θ1 ′ ′),
36 first imaging surface (reflected by mirror (reflection surface) at first reflection angle θ1 ′ ′),
37 second imaging plane (reflected by mirror (reflection surface) at first reflection angle θ1 ′ ′),
38 third imaging surface (reflected by mirror (reflection surface) at first reflection angle θ1 ′ ′),
39 fourth imaging plane (reflected by mirror (reflection surface) at first reflection angle θ1 ′ ′),
41b, 41c (first reflection angle θ1 ′ ′) first mirror,
42b second mirror (of first reflection angle −θ1 ′ ′),
42c (with a second reflection angle θ2 ′ ′) second mirror,
43b (first reflection angle -θ1 ′ ′) third mirror,
43c (third reflection angle θ3 ′ ′) third mirror,
45 four-sided reflection mirror,
46b first reflecting surface (of four-surface reflecting mirror),
47b second reflecting surface (of four-surface reflecting mirror),
48b third reflection surface (of four-surface reflection mirror),
49b fourth surface (of four-surface reflecting mirror),
51 secondary light emitting surface,
52 condenser lenses,
53 lighting blinds,
54 illumination area select opening,
60 illumination plane (perpendicular to the chief ray),
61 first minor illumination plane (perpendicular to the chief ray),
62 Second minor illumination plane (perpendicular to the chief ray)
63 third minor illumination plane (perpendicular to the chief ray),
71, 71a, 71b, 71c, first three-dimensional work,
72, 72a, 72b, 72c, second three-dimensional work,
73, 73a, 73b, 73c, third three-dimensional work,
74, 74a, 74b, 74c, fourth solid work,
75, 75a, 75b, 75c, fifth solid work,
76, 76a, 76b, 76c, sixth solid work,
77, 77a, 77b, 77c, 7th three-dimensional work,
78, 78a, 78b, 78c, eighth dimensional work,
80 XYZ rotation stages,
90 Alliant Cameras,
100 chief ray (of illumination light emitted from the secondary light emitting surface),
110 first chief ray (of illumination light emitted from point A1),
120 second chief ray (of illumination light emitted from point A2),
130 third chief ray (of illumination light emitted from point A3)
200 illumination light,
210 first illumination light (outgoing from point A1),
220 (second light emitted from point A2),
230 third illumination light (outgoing from point A3)
310 first telecentric light (passing the first small object plane),
320 second telecentric light (passing through the second minute object plane)
330 third telecentric light (passing through the third minute object plane)
A1 first point (near one end of the diameter) on the object plane (illumination plane),
A2 second point (center) on the object plane (illumination plane),
A3 third point (near the other end of the diameter) on the object plane (illumination plane),
A1 ′ first point (near one end of diameter) on imaging plane 30,
A2 '(second center) on imaging plane 30,
A3 ′ third point (near the other end of the diameter) on the imaging plane 30,
One end of the aperture diameter of D1 (of the aperture),
D2 (of aperture), center of aperture,
The other end of the aperture diameter of D2,
θ1 first tilt angle (of the first small object plane),
θ2 (for the second small object plane),
third tilt angle (of the third small object plane) θ3,
θ1 ′ first inclination angle (of the first minute imaging plane),
θ2 ′ (second minute image plane) second tilt angle,
θ3 ′ (third imaging plane) third inclination angle,
θ 1 ′ ′ (first mirror) first reflection angle (= | (θ 1) | / 2)
θ2 ′ ′ (second mirror) second reflection angle (= | (θ2) | / 2)
θ3 ′ ′ (third mirror) third reflection angle (= | (θ3) | / 2)

Claims (6)

A projection exposure apparatus capable of exposing the surface of a three-dimensional work having a surface at an arbitrary angle with respect to the chief ray of illumination light,
An exposure mask pattern disposed at right angles to the chief ray;
A mirror having a plurality of reflecting surfaces for reflecting illumination light having passed through the mask pattern for exposure toward the image forming surface on the three-dimensional work at a predetermined inclination angle with respect to the chief ray;
Have at least
Pattern exposure is simultaneously performed on the side surfaces of a plurality of three-dimensional work within the exposable width by the mirror having the plurality of reflecting surfaces corresponding to the mask pattern for exposure .
The inclination angle of each of the mirrors having the plurality of reflecting surfaces is
The optical path lengths passing through different paths from an arbitrary point on the exposure mask pattern to a point corresponding to the point on the imaging surface are set to be equal.
Flood shadow exposure apparatus. The projection exposure apparatus according to claim 1, wherein the mirror is capable of rotating a reflective surface about the chief ray. The mirror has a plurality of the reflecting surfaces;
The exposure mask pattern is a projection exposure apparatus according to claim 1 or 2 having a mask surface corresponding to the respective reflecting surfaces. The projection exposure apparatus according to claim 3 , further comprising an illumination blind capable of partially shielding the irradiation light to the plurality of reflection surfaces to select the irradiation light. 5. The projection exposure apparatus according to claim 4 , wherein each reflection surface of the mirror is directed to be able to reflect corresponding illumination light toward each surface of the three-dimensional work having a plurality of surfaces in different directions. The plurality of three-dimensional works are arranged at predetermined intervals, and the mask pattern for exposure is arranged in parallel for a plurality of lines corresponding to the respective image forming planes on the respective three-dimensional works. The projection exposure apparatus according to any one of claims 1 to 5 , wherein the plurality of mirrors are arranged in parallel.

Images