JP6532911B2 - Method of manufacturing light emitting device - Google Patents

Description

  The present invention relates to a method of manufacturing a light emitting device.

In recent years, electroluminescence (EL)
Research and development of light emitting devices using the The basic configuration of these light-emitting elements is one in which a layer containing a light-emitting substance is sandwiched between a pair of electrodes. By applying a voltage to this element, light emission from the light-emitting substance can be obtained.

Since the above-described light emitting element is a self light emitting type, a light emitting device using the same has advantages such as excellent visibility, no need for a backlight, and low power consumption. Furthermore, a light-emitting device using a light-emitting element can be manufactured to be thin and light, and has advantages such as high response speed.

In addition, as a light-emitting device having the above-described light-emitting element, its application to a flexible substrate is being studied because flexibility can be achieved.

As a method for manufacturing a light emitting device using a flexible substrate, for example, after a semiconductor element such as a thin film transistor is manufactured on a substrate such as a glass substrate or a quartz substrate, an organic resin is filled between the semiconductor element and the substrate. There has been developed a technology for transferring a semiconductor element from a glass substrate or a quartz substrate to another substrate (for example, a flexible substrate). In order to electrically connect the semiconductor element and an external power supply after the semiconductor element is transferred to the flexible substrate, it is necessary to make a hole in the organic resin and the substrate.

For example, a laser ablation method has been devised as a method for forming a through hole in an interlayer insulating film of an organic resin (Patent Document 1).

Japanese Patent Application Laid-Open No. 07-80670

In the light emitting device using the flexible substrate described above, a hole is formed in a layer such as an organic film or a substrate provided on an electrode for connecting a semiconductor element forming the light emitting device to an external power supply and a signal line. There is a need. However, when drilling holes in an organic film or substrate by, for example, laser ablation, there is a risk that the bottom of the hole or the periphery of the hole may be damaged by heat, or the hole may not be drilled to a desired depth. Therefore, a method of manufacturing a light emitting device capable of easily connecting electrically with an external power supply or the like by making a hole in an organic film to a desired depth without exposing the bottom of the hole or the periphery of the hole by heat and exposing the electrode terminal Providing is one of the issues. Another object is to provide a method of exposing an electrode terminal covered with an organic film or the like without damaging the electrode terminal. The term "heat damage" as used herein includes burnt and surface damage.

One embodiment of the present invention includes a step of forming an electrode terminal on a first substrate, a step of forming a first electrode layer electrically connected to the electrode terminal, and a partition covering an end portion of the first electrode layer. Forming an organic compound-containing layer on the electrode terminal and the first electrode layer, forming a second electrode layer on the organic compound-containing layer, and forming a release layer on the second substrate And bonding the first substrate and the second substrate via the adhesive layer so that the peeling layer and the second electrode layer face each other, and peeling off the second substrate, the surface exposed by the peeling. A step of forming an organic layer on the upper side, and forming a cut around a portion overlapping the electrode terminal of the organic layer, and peeling off the adhesive layer and the organic layer surrounded by the cut;
A method for manufacturing a light emitting device, comprising the steps of: exposing an electrode terminal; and forming a conductive layer electrically connected to the electrode terminal.

In addition to the first electrode layer, a layer containing an organic compound is formed in an island shape not only in the region of the electrode terminal to which an external power supply and an external signal are input. The interface between the layer containing the organic compound and the electrode terminal has low adhesion. Therefore, the adhesive layer formed on the layer containing the organic compound on the electrode terminal can be easily peeled off from the electrode terminal. As a result, the electrode terminal can be exposed by cutting the organic layer and peeling the organic layer.

According to the manufacturing method of a light-emitting device of one embodiment of the present invention, the organic layer is removed in a shorter time than in the case of using a laser ablation method, a dry etching method, an ion beam sputtering method, or the like to expose an electrode terminal. it can. In addition, the organic layer can be removed without damaging the electrode terminal.

Further, according to another aspect of the present invention, there is provided a method of forming a first release layer on a first substrate, forming an electrode terminal on the first release layer, and electrically connecting the electrode terminal to the electrode terminal. A step of forming an electrode layer, a step of forming a partition covering an end of the first electrode layer, a step of forming a layer containing an organic compound on the electrode terminal and the first electrode layer, and a layer containing an organic compound Forming a second electrode layer on the
A step of forming a second release layer on the second substrate, a step of bonding the first substrate and the second substrate via an adhesive layer so that the second release layer and the second electrode layer face each other; Peeling the second substrate, forming a second organic layer on the surface exposed by the peeling, providing a second flexible substrate in contact with the second organic layer, and peeling the first substrate Forming a first organic layer on the surface exposed by the peeling, and providing a first flexible substrate in contact with the first organic layer, and a second flexible substrate and a second substrate. A step of surrounding the part overlapping the electrode terminal of the organic layer to make a cut, peeling the second flexible substrate, the adhesive layer and the second organic layer surrounded by the cut, and exposing the electrode terminal; And a step of forming a conductive layer electrically connected to a terminal.

In addition to the first electrode layer, a layer containing an organic compound is formed in an island shape not only in the region of the electrode terminal to which an external power supply and an external signal are input. The interface between the layer containing the organic compound and the electrode terminal has low adhesion. Therefore, the adhesive layer formed on the layer containing the organic compound on the electrode terminal can be easily peeled off from the electrode terminal. As a result, the second organic layer can be cut and the second organic layer can be peeled off to expose the electrode terminal.

According to the method for manufacturing a light-emitting device of one embodiment of the present invention, the second method can be performed in a shorter time than in the case of using a laser ablation method, a dry etching method, an ion beam sputtering method, or the like.
The organic layer can be removed to expose the electrode terminal. In addition, the second organic layer can be removed without damaging the electrode terminal.

According to the method for manufacturing a light-emitting device of one embodiment of the present invention, a flexible light-emitting device can be obtained using a flexible substrate.

Furthermore, the step of forming a colored layer on the release layer (or second release layer) after the step of forming the release layer (or second release layer) after the second electrode layer has translucency Is preferred.

With the method for manufacturing a light-emitting device of one embodiment of the present invention, light emission of the light-emitting element can be extracted outside from the second organic layer side. In addition, light emitted from the light-emitting element can be extracted to the outside through the coloring layer, so that a desired emission color can be obtained.

According to one aspect of the present invention, the hole for exposing the electrode terminal can be formed in the organic resin or the like without damaging the electrode terminal. It is possible to provide a flexible light emitting device capable of inputting a power supply and a signal from the electrode terminal.

FIG. 5 is a cross-sectional view of a light-emitting device of one embodiment of the present invention. 7A to 7D are cross-sectional views illustrating a method for manufacturing a light-emitting device of one embodiment of the present invention. 7A to 7D are cross-sectional views illustrating a method for manufacturing a light-emitting device of one embodiment of the present invention. 7A to 7D are cross-sectional views illustrating a method for manufacturing a light-emitting device of one embodiment of the present invention. 7A to 7D are cross-sectional views illustrating a method for manufacturing a light-emitting device of one embodiment of the present invention. 7A to 7D are cross-sectional views illustrating a method for manufacturing a light-emitting device of one embodiment of the present invention. 5A and 5B are a top view and a cross-sectional view of a light-emitting device of one embodiment of the present invention. 7A to 7D are cross-sectional views illustrating a method for manufacturing a light-emitting device of one embodiment of the present invention. 7A to 7D are cross-sectional views illustrating a method for manufacturing a light-emitting device of one embodiment of the present invention. 7A to 7D are cross-sectional views illustrating a method for manufacturing a light-emitting device of one embodiment of the present invention. 7A to 7D are cross-sectional views illustrating a method for manufacturing a light-emitting device of one embodiment of the present invention. 7A to 7D are cross-sectional views illustrating a method for manufacturing a light-emitting device of one embodiment of the present invention. FIG. 7 is a cross-sectional view of a light-emitting element of one embodiment of the present invention. 5A to 5C illustrate electronic devices using a light-emitting device of one embodiment of the present invention. 5A to 5C illustrate electronic devices using a light-emitting device of one embodiment of the present invention. FIG. 5 is a cross-sectional view of a light-emitting device of one embodiment of the present invention.

Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it can be easily understood by those skilled in the art that various changes can be made in the form and details without departing from the spirit and the scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in the structures of the invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description of such portions is not repeated.

Embodiment 1
A cross-sectional view of a light-emitting device 901 that can be manufactured by the method for manufacturing a light-emitting device of one embodiment of the present invention is shown in FIG.
Shown in). The light emitting device 901 includes an electrode terminal 157 and a first electrode layer 118 on the first substrate 100 a. The end of the first electrode layer 118 is covered with the partition wall 124 and is insulated.
The layer 120 containing an organic compound is in contact with at least the top surfaces of the first electrode layer 118 and the partition wall 124. There is a portion where the layer 120 containing an organic compound is not present on the electrode terminal 157.
The second electrode layer 122 is in contact with at least the top surface of the layer 120 containing an organic compound. The second electrode layer 122 is not present on the electrode terminal 157. The adhesive layer 170 is in contact with the second electrode layer 122. The adhesive layer 170 is not present on the electrode terminal 157. The second release layer 101 b is in contact with the top surface of the adhesive layer 170. The second organic layer 700 b is in contact with the top surface of the second release layer 101 b. The second organic layer 700 b is not present on the electrode terminal 157. The conductive layer 600 is electrically connected to the electrode terminal 157.

Note that the first electrode layer 118, the layer 120 containing an organic compound, and the second electrode layer 122 which are surrounded by the partition wall 124 are referred to as a light emitting element 130.

(substrate)
As the first substrate 100 a, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, a metal substrate, or the like can be used. Alternatively, a plastic substrate having heat resistance that can withstand the processing temperature of this embodiment may be used.

In addition, as the glass substrate, in the case where the temperature of the heat treatment to be performed later is high, it is preferable to use one whose strain point is 730 ° C. or higher. Further, for the glass substrate, for example, aluminosilicate glass,
Glass materials such as aluminoborosilicate glass and barium borosilicate glass are used. Note that by containing a large amount of barium oxide (BaO), a more practical heat-resistant glass can be obtained. Besides, crystallized glass can be used.

(Electrode terminal)
The electrode terminal 157 can be formed of a substance having electrical conductivity. For example, metal,
It can be formed of a semiconductor or the like.

(First electrode layer)
As the first electrode layer 118, a material that efficiently reflects light emitted by the layer 120 containing an organic compound to be formed later is preferable. This is because the light extraction efficiency can be improved. In addition, the first
The electrode layer 118 may have a stacked structure. For example, a conductive film of metal oxide or titanium or the like is thinly formed on the side in contact with the layer 120 containing an organic compound, and a metal film with high reflectance (aluminum, alloy containing aluminum, or silver or the like) is used for the other. Can. With such a configuration, the layer 120 containing an organic compound and a metal film with high reflectance (aluminum,
It is preferable because the formation of an insulating film formed between an alloy containing aluminum or silver or the like can be suppressed.

In the present embodiment, although a light emitting device having a top emission structure (upper surface emission structure) is illustrated, in the case of using a light emission device having a bottom emission structure (lower surface emission structure) and a dual emission structure (both surface emission structure) For the first electrode layer 118, a translucent material may be used.

(Partition wall)
The partition wall 124 is provided to prevent an electrical short between the adjacent first electrode layers 118. Although only one first electrode layer 118 is shown in the drawing, the first electrode layer 1 is not shown in the light emitting device.
There may be a plurality of 18 provided. In the case where a metal mask is used in forming the layer 120 containing an organic compound described later, the layer 120 containing an organic compound between light emitting elements is divided over the partition wall 124. The partition wall 124 can be formed of an organic resin, an inorganic film, or the like.

(Layer containing organic compounds)
The structure of the layer 120 containing an organic compound will be described in Embodiment 3.

(Second electrode layer)
The second electrode layer 122 is preferably an electrode with a small work function that can inject electrons into the layer 120 containing an organic compound described later. Instead of a metal work layer with a small work function, a layer formed with a few nm of alkali metal or alkaline earth metal with a small work function is used as a buffer layer, on which metal such as aluminum, metal oxide such as indium-tin oxide It is preferable to use an electrode in which an object or a semiconductor is formed. As the buffer layer, oxides or halides of alkali metals or alkaline earth metals can also be used. In addition, an alloy such as magnesium-silver is used as the second electrode layer 1
It can also be used as 22.

Further, in the case of extracting light exhibited by the light emitting element through the second electrode layer 122, the second electrode layer 122 preferably has a light transmitting property with respect to visible light.

(Adhesive layer)
The adhesive layer 170 is in contact with the second electrode layer 122. Second peeling layer 101 b and first substrate 10
0a is fixed by the adhesive layer 170. As the adhesive layer 170, a photocurable adhesive, a reaction curable adhesive, a thermosetting adhesive, or an anaerobic adhesive can be used. For example, epoxy resin, acrylic resin, imide resin, etc. can be used. In addition, the reliability of the light-emitting element 130 is improved by mixing a desiccant (such as zeolite or the like) having a size smaller than the light wavelength and a filler (such as titanium oxide or zirconium) having a large refractive index into the adhesive. This is preferable because the light extraction efficiency from the light emitting element 130 is improved.

(Peeling layer)
The second peeling layer 101 b is an element selected from tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, zirconium, ruthenium, rhodium, palladium, osmium, iridium, silicon, or an alloy material containing the element, or the element And a single layer or a laminated layer. The crystal structure of the layer containing silicon may be amorphous, microcrystalline or polycrystalline. In addition, any of metal oxides such as aluminum oxide, gallium oxide, zinc oxide, titanium dioxide, indium oxide, indium tin oxide, indium zinc oxide, and In—Ga—Zn-based oxide may be used.

The second peeling layer 101 b can be formed by a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. In addition, the coating method includes a spin coating method, a droplet discharge method, and a dispensing method.

When the second peeling layer 101 b has a single layer structure, preferably, a tungsten layer, a molybdenum layer,
Alternatively, a layer containing a mixture of tungsten and molybdenum is formed. Alternatively, a layer containing oxide or oxynitride of tungsten, a layer containing oxide or oxynitride of molybdenum, or a layer containing oxide or oxynitride of a mixture of tungsten and molybdenum is formed. Note that a mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum.

In the case of forming a stacked structure of a layer containing tungsten and a layer containing an oxide of tungsten as the second peeling layer 101b, a layer containing tungsten is formed, and an insulating layer formed of an oxide is formed thereover. By doing so, it may be utilized that a layer containing an oxide of tungsten is formed at the interface between the tungsten layer and the insulating layer. Alternatively, the surface of the layer containing tungsten may be subjected to a thermal oxidation treatment, an oxygen plasma treatment, a treatment with a highly oxidizing solution such as ozone water, or the like to form a layer containing an oxide of tungsten. Note that the second peeling layer 101 b and the first peeling layer 101 a described later can be formed of the same material.

(2nd organic layer)
The second organic layer 700 b is in contact with the second release layer 101 b. An organic resin can be used for the second organic layer 700 b. For example, epoxy resin, acrylic resin, imide resin, etc. can be used.

(Conductive layer)
The conductive layer 600 is electrically connected to the electrode terminal 157. As the conductive layer 600, a conductive paste such as a silver paste, a film or a paste containing an anisotropic conductor, a metal formed by a sputtering method, or the like can be used.

<Method for manufacturing light emitting device>
FIG. 2 shows a method for manufacturing a light emitting device of one embodiment of the present invention. In the cross-sectional view, a method for manufacturing the second electrode layer 122 is shown. The material which comprises each component described below shall be able to take the above into consideration.

First, the electrode terminal 157 is formed on the first substrate 100a (FIG. 2A). Electrode terminal 1
57 may be formed by sputtering or the like.

Next, the first electrode layer 118 is formed on the first substrate 100a (FIG. 2B). The first electrode layer 118 is electrically connected to the electrode terminal 157. The first electrode layer 118 is formed by depositing a conductive film by an evaporation method or a sputtering method and processing the conductive film into a desired shape by photolithography.

Next, the end portion of the first electrode layer 118 is covered to form a partition wall 124 (FIG. 2C). Bulkhead 1
24 is formed by forming an organic resin by a coating method and processing it into a desired shape using photolithography.

Next, a layer 120 containing an organic compound is formed in contact with the electrode terminal 157, the first electrode layer 118, and the partition wall 124 (FIG. 2D). Layer 120 containing an organic compound and electrode terminal 1
Since the interface 57 has low adhesion, the layer 12 containing an organic compound is in contact with the electrode terminal 157.
When 0 is formed, the layer 120 containing an organic compound can be easily peeled off from the electrode terminal 157 in a later step. Thereby, the electrode terminal 157 can be exposed.

Next, the second electrode layer 122 is formed in contact with the layer 120 containing an organic compound (see FIG.
E)). The second electrode layer 122 can be formed by an evaporation method, a sputtering method, or the like.

In FIG. 3, a step of forming a second peeling layer 101 b on a second substrate 100 b, and a second organic layer 7.
The steps up to forming 00b are shown.

The second peeling layer 101b is formed to be in contact with the second substrate 100b (FIG. 3A). Second
The substrate 100 b can use the same material as the first substrate 100 a. Second peeling layer 101
b can be formed by a sputtering method, a vapor deposition method, or the like.

Next, the adhesive layer 170 is applied so as to be in contact with the second peeling layer 101b in contact with the second substrate 100b. The second electrode layer 122 and the second peeling layer 101b are fixed by the applied adhesive layer 170 (FIG. 3B). Since the light emitting element 130 is protected by the adhesive layer 170, a highly reliable light emitting device can be obtained.

Next, the second substrate 100b is peeled off from the light emitting device (FIG. 3C). As a peeling method,
Mechanical force may be applied (processing to separate with human hands or jig, processing to separate while rotating a roller, ultrasonic processing, etc.). For example, the second peeling layer 101 b is cut with a sharp blade or laser light irradiation, and water is injected into the cut. Water infiltrates between the second peeling layer 101b and the second substrate 100b by capillary action, whereby the second substrate 100b can be easily peeled from the light emitting device. Note that in the case where a cut is made by laser light irradiation, laser light may be emitted from the first substrate 100 a or the second substrate 100 b.

Next, dust on the second peeling layer 101b is removed, and a second organic layer 700b is formed on the second peeling layer 101b (FIG. 3D).

The second organic layer 700 b and the second peeling layer 10 are illustrated in FIG. 4 so as to surround a portion overlapping the electrode terminal 157.
1 b and from the step of cutting the adhesive layer 170 to the step of forming the conductive layer 600.

The second organic layer 700 b and the second peeling layer 101 b, so as to surround a portion overlapping the electrode terminal 157.
And cut the adhesive layer 170 (FIG. 4A). A cut may be made using a sharp blade or the like.

Next, a second organic layer 700b is cut to surround a portion overlapping with the electrode terminal 157.
Part of the light emitting device may be pulled in a direction to be pulled away from the light emitting device. For example, an adhesive tape may be attached, and then the tape may be pulled in a direction to peel off the second organic layer 700b from the light emitting device. Since the interface between the layer 120 containing an organic compound and the electrode terminal 157 has low adhesion, the electrode terminal 157 can be exposed (FIG. 4B). Thus, holes reaching the electrode terminal 157 can be formed in the second organic layer 700 b, the second peeling layer 101 b, the adhesive layer 170, and the layer 120 containing an organic compound. Note that after the second organic layer 700 b is peeled off, part of the layer 120 containing an organic compound may be attached to the electrode terminal 157. Note that the conductive layer 6 to be formed later is formed of the layer 120 containing the organic compound deposited on the electrode terminal 157.
Problems may occur with respect to the adhesion between the electrode 00 and the electrode terminal 157 and the electrical connection. In that case, after peeling off the second organic layer 700 b, it is preferable to remove the layer 120 including the organic compound attached onto the electrode terminal 157 using an organic solvent such as acetone.

Next, the holes opened as described above are filled with the conductive layer 600 (FIG. 4C). Conductive layer 60
It is preferable that 0 be formed of silver paste or the like. An external power supply and an external signal can be input through the conductive layer 600. Alternatively, an anisotropic conductive film as the conductive layer 600,
Or using an anisotropic conductive paste, FPC (Flexible Print Circuit)
and the FPC and the electrode terminal 157 are electrically connected to each other by thermocompression bonding.
It may be electrically connected through 0. Alternatively, instead of the FPC, a method of directly mounting an IC chip may be used.

According to the method for manufacturing a light-emitting device of one embodiment of the present invention, it is possible to make a hole in a resin or the like which is difficult to make a hole in a desired place by a laser ablation method. In addition, without damaging the electrode terminal 157, a hole can be made in a resin or the like whose opening is difficult.

<Modified Example 1 of Manufacturing Method of Light-Emitting Device>
A cross-sectional view of a light-emitting device 902 that can be manufactured by the method for manufacturing a light-emitting device of one embodiment of the present invention is shown in FIG.
Shown in). Since the flexible substrate 501 and the second organic layer 700 b are used, the light-emitting device 902 has flexibility. The method for manufacturing the light-emitting device 902 corresponds to the first substrate 100a.
And the light emitting element 130 are added to the method of manufacturing the light emitting device 901.

In the present modification, when using a glass substrate as the first substrate 100 a, the first substrate 100 a
a silicon oxide film, a silicon oxynitride film, a silicon nitride film, and the first peeling layer 101a
By forming an insulating layer such as a silicon nitride oxide film, contamination of the alkali metal from the glass substrate can be prevented, which is more preferable.

The light-emitting device 902 is in contact with the top surface of the flexible substrate 501 to form the first organic layer 700.
have a. The first peeling layer 101a is in contact with the top surface of the first organic layer 700a. The electrode terminal 157 and the first electrode layer 118 are formed on the first peeling layer 101a. First electrode layer 1
The end of 18 is covered with a partition 124 and insulated. The layer 120 containing an organic compound is in contact with at least the top surfaces of the electrode terminal 157, the first electrode layer 118, and the partition wall 124. The layer 120 containing the organic compound on the electrode terminal 157 is removed at the time of opening the adhesive layer 170 or the like described later. The second electrode layer 122 is in contact with at least the top surface of the layer 120 containing an organic compound. The second electrode layer 122 on the electrode terminal 157 is also removed when the adhesive layer 170 or the like described later is opened. The adhesive layer 170 is in contact with the second electrode layer 122. The adhesive layer 170 on the electrode terminal 157 is also removed when the adhesive layer 170 or the like to be described later is opened. The second release layer 101 b is in contact with the top surface of the adhesive layer 170. The second release layer 101 b on the electrode terminal 157 is also removed when the adhesive layer 170 or the like to be described later is opened. The second organic layer 700 b is in contact with the top surface of the second release layer 101 b.
The second organic layer 700 b on the electrode terminal 157 is also removed when the adhesive layer 170 or the like to be described later is opened. The conductive layer 600 is electrically connected to the electrode terminal 157.

Only steps different from the manufacturing process of the light emitting device 901 are shown in FIG. Embodiment 1 can be referred to for steps other than the above.

The first peeling layer 101a is formed to be in contact with the first substrate 100a (FIG. 5A). First
The release layer 101a can use the same material as the second release layer 101b.

  Next, the electrode terminal 157 is formed in contact with the first peeling layer 101a (FIG. 5B).

As shown in FIG. 2 of the first embodiment, from the formation of the first electrode layer 118 to the formation of the second organic layer 700 b.
B) to FIG. 2 (E) and FIG. 3 can be referred to. One surface of the light emitting device is formed of the second organic layer 700 b (FIG. 5C). In the following steps, the other substrate is peeled from the light emitting device and transferred to the flexible substrate 501 to form a flexible light emitting device.

The first substrate 100a is peeled off from the light emitting device (FIG. 5D). As a peeling method, mechanical force may be applied (processing of peeling with a human hand or a jig, processing of separating while rotating a roller, ultrasonic processing, or the like). For example, the first peeling layer 101a is cut with a sharp blade or laser light irradiation, and water is injected into the cut. Water penetrates between the first peeling layer 101a and the first substrate 100a by capillary action, whereby the first substrate 1 is formed.
00a can be easily peeled off from the light emitting device. Note that in the case where a cut is made by laser light irradiation, laser light may be emitted from the second substrate 100 b or the first substrate 100 a.

Next, the water on the first peeling layer 101a is removed, and the first peeling layer 101a is brought into contact with the first peeling layer 101a.
An organic layer 700 a is formed, and a flexible substrate 501 is attached. (FIG. 5 (E)).

As the substrate 501 having flexibility, a substrate having flexibility and transparency to visible light can be used. For example, polyethylene terephthalate resin, polyethylene naphthalate resin, polyacrylonitrile resin, polyimide resin, polymethyl Methacrylate resin,
Polycarbonate resin, polyether sulfone resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamide imide resin, polyvinyl chloride resin, and the like can be suitably used. In addition, the flexible substrate 501 has a thermal expansion coefficient of 30 ppm / K.
Or less, more preferably 10 ppm / K or less. In addition, a film having a low water permeability such as a film containing nitrogen and silicon such as silicon nitride or silicon oxynitride, or a film containing nitrogen and aluminum such as aluminum nitride is previously formed on the flexible substrate 501. You may leave it. Note that a structure (also referred to as a so-called prepreg) in which a fibrous body is impregnated with an organic resin may be used as the flexible substrate 501.

The second organic layer 700 b and the second peeling layer 10 are illustrated in FIG. 6 so as to surround a portion overlapping with the electrode terminal 157.
1 b and from the step of cutting the adhesive layer 170 to the formation of the conductive layer 600.

The second organic layer 700 b and the second peeling layer 101 b, so as to surround a portion overlapping the electrode terminal 157.
And cut the adhesive layer 170 (FIG. 6A). A cut may be made using a sharp blade or the like.

Next, a second organic layer 700b is cut to surround a portion overlapping with the electrode terminal 157.
Pull a portion of the light emitting device in the direction of peeling it from the light emitting device. Since the interface between the layer containing an organic compound and the electrode terminal has low adhesion, the electrode terminal 157 can be exposed.

Next, the holes opened as described above are filled with the conductive layer 600 (FIG. 6B). Conductive layer 6
Preferably, 00 is formed of silver paste or the like. An external power supply and an external signal can be input through the conductive layer 600. Alternatively, an anisotropic conductive film or an anisotropic conductive paste is used as the conductive layer 600, and an FPC (Flexible Print Cir
and the FPC and the electrode terminal 157 are electrically connected to each other by thermocompression bonding.
You may electrically connect through 00. Alternatively, instead of the FPC, a method of directly mounting an IC chip may be used.

According to the method for manufacturing a light-emitting device of the present invention, a hole can be formed in a resin or the like in which opening of a region overlapping with the electrode terminal 157 is difficult. It is possible to make a hole in a resin or the like whose opening is difficult without damaging the electrode terminal 157.

In addition, since the flexible substrate 501 and the second organic layer 700 b are used, a flexible light-emitting device can be obtained.

<Modification 2 of a method of manufacturing a light emitting device>
A cross-sectional view of a light-emitting device 903 that can be manufactured by the method for manufacturing a light-emitting device of one embodiment of the present invention is shown in FIG.
Shown in). The light emitting device 903 has a colored layer 1 between the adhesive layer 170 and the second peeling layer 101 b.
It has 66. The other structures are the same as those of the light-emitting device 901, and thus the above embodiment can be taken into consideration. Therefore, only the method for producing the colored layer 166 will be described below.

The formation of the second electrode layer 122 can be performed by forming the light emitting device 901 (see FIGS. 2A to 2 (E).
)) Can be taken into consideration.

(Colored layer)
The colored layer 166 is formed on the second release layer 101b of the second substrate 100b. In addition, FIG.
In (C), the positions of the second peeling layer 101 b and the colored layer 166 are shown downward with respect to the second substrate 100 b. The colored layer 166, also referred to as a color filter, is a colored layer that transmits light in a specific wavelength range. For example, a red colored layer transmitting light in the red wavelength band, a green coloring layer transmitting light in the green wavelength band, a blue coloring layer transmitting light in the blue wavelength band, or the like can be used. Each colored layer may be formed by a printing method, an inkjet method, or an etching method using a photolithography technique using a known material (FIG. 6C).

The colored layer 166 formed on the second substrate 100 b is the second electrode layer 122 via the adhesive layer 170.
It is sufficient to bond with Embodiment 1 can be referred to for the process.

Embodiment 1 can be referred to in the step of peeling the second substrate 100 b from the light-emitting device and forming the second organic layer 700 b.

  Embodiment 1 can also be referred to in the method for exposing the electrode terminal 157.

By the method for manufacturing a light-emitting device of the present invention, a hole can be formed in a region overlapping with the electrode terminal 157. A hole can be made in the resin or the like without damaging the electrode terminal 157.

According to the method for manufacturing the light-emitting device, the light-emitting device manufactured can extract light emitted from the light-emitting element to the outside through the coloring layer, so that a desired emission color can be obtained.

<Modification 3 of a method of manufacturing a light emitting device>
A cross-sectional view of a light-emitting device 904 that can be manufactured by the method for manufacturing a light-emitting device of one embodiment of the present invention is shown in FIG.
Shown in). Since the flexible substrate 501 and the second organic layer 700 b are used, the light emitting device 904 has flexibility. In addition, the light emitting device 904 includes a colored layer 166 between the adhesive layer 170 and the second release layer 101 b. The other configuration is the same as that of the light emitting device 903.

The colored layer 166 formed on the second substrate 100 b is the second electrode layer 12 through the adhesive layer 170.
It may be adhered to 2. Embodiment 1 can be referred to for the process.

Embodiment 1 can be referred to in the step of peeling the second substrate 100 b from the light-emitting device and forming the second organic layer 700 b.

The first substrate 100a is peeled from the light emitting device, and the first organic layer 700a and the substrate 5 having flexibility are removed.
Embodiment 1 can be referred to for the step of forming 01.

According to the method for manufacturing a light-emitting device of the present invention, a hole can be formed in a resin or the like in which opening of a region overlapping with the electrode terminal 157 is difficult. It is possible to make a hole in a resin or the like whose opening is difficult without damaging the electrode terminal 157.

In addition, since the flexible substrate 501 and the second organic layer 700 b are used, a flexible light-emitting device can be obtained by the manufacturing method of the light-emitting device.

In addition, according to the manufacturing method of the light-emitting device, the light-emitting device manufactured can extract light exhibited by the light-emitting element to the outside through the coloring layer, so that a desired emission color can be obtained.

Second Embodiment
In this embodiment mode, the structure of the light-emitting device of one embodiment of the light-emitting device of the present invention will be described with reference to FIGS. 7A and 7B, and then, a method for manufacturing the light-emitting device is described with reference to FIGS. A description will be made using 12.

<Structure of light emitting device>
FIG. 7A is a top view showing a light emitting device, and FIG. 7B is a broken line A1-A in FIG. 7A.
FIG.

The light-emitting device illustrated in FIG. 7A includes a pixel portion 450 provided over a flexible substrate 501.
2. A signal line circuit unit 4503 is provided.

Each pixel is provided with a transistor 150 which controls driving of a light emitting element. Further, FIG. 7 shows a transistor 152 as an example of the signal line circuit portion 4503.

The light-emitting device illustrated in FIG. 7B has a structure in which a flexible substrate 501 and a flexible substrate 502 are attached to each other by an adhesive layer 170. The flexible substrate 501 has
A transistor 150, a light emitting element 130 formed over the transistor 150, a partition 124 formed between pixels, and an electrode terminal 157 are formed. Flexible substrate 50
A light shielding film 164 and a colored layer 166 are formed on the surface 2.

The light-emitting device illustrated in FIG. 7B is a light-emitting device with a so-called top emission structure in which light from the light-emitting element 130 is emitted from the flexible substrate 502 side through the colored layer 166.

The flexible substrate 501 has a first organic layer 7 provided on the flexible substrate 501.
Electrically connected to the transistor 150 for controlling driving of the first buffer layer 104 provided on the first organic layer 700 a, the light emitting element provided on the first buffer layer 104, and the transistor 150 And the partition wall 124 between the light emitting elements 130.

The transistor 150 includes a gate electrode layer 106 formed over the first buffer layer 104, a gate insulating layer 108 formed over the gate electrode layer 106, and a semiconductor layer 110 formed over the gate insulating layer 108. The source electrode layer 112 a and the drain electrode layer 112 b formed over the semiconductor layer 110 are included. In addition, the transistor 150 includes the first insulating layer 1.
14 and a second insulating layer 116, and on the second insulating layer 116, a first electrode layer 118 and a layer 120 containing an organic compound formed on the first electrode layer 118; And a second electrode layer 122 formed on the layer 120 containing an organic compound.

The transistor 151 and the transistor 152 illustrated in FIG. 7B have a structure similar to that of the transistor 150. However, the size (for example, L length and W length) of the transistors, connection of the transistors, and the like can be appropriately adjusted in each transistor.

In addition, the light emitting element 130 is formed of the first electrode layer 118, the layer 120 containing an organic compound, and the second electrode layer 122. In addition, the light emitting element 130 is electrically connected to the transistor 150 through an opening provided in the first insulating layer 114 and the second insulating layer 116. The electrode terminal 157 is not covered by the second insulating layer 116. This is to form the layer 120 containing an organic compound on the surface of the electrode terminal 157.

The layer 120 containing an organic compound and the second electrode layer 122 are formed in contact with the top surface of the electrode terminal 157. Peeling at the interface between the electrode terminal 157 and the layer 120 containing an organic compound
It is for peeling off 70.

  The light emitting elements 130 are separated by the partition wall 124 to form pixels.

The partition wall 124 is provided so that a film formed on the top surface is not interrupted due to a step such as an opening provided in the first electrode layer 118, the first insulating layer 114, and the second insulating layer 116. Therefore, it is preferable that the partition wall 124 have a forward tapered shape so that the film formed on the top surface is not interrupted. Note that the forward tapered shape refers to a configuration in which another layer is in contact with the underlying layer at a gentle angle at an increased thickness.

Here, a method for manufacturing the light-emitting device illustrated in FIG. 7B will be described in detail with reference to FIGS.

<Method for manufacturing light emitting device>
First, the first release layer 101a is formed on the first substrate 100a, and the first buffer layer 104 is formed on the first release layer 101a. The first buffer layer 104 is preferably formed continuously without exposing the first release layer 101 a to the air. Consecutive formation can prevent dust and impurities from being mixed between the first peeling layer 101 a and the first buffer layer 104.

As the first substrate 100 a, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, a metal substrate, or the like can be used. Embodiment 1 can be referred to for details.

The first peeling layer 101 a is an element selected from tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, zirconium, ruthenium, rhodium, palladium, osmium, iridium, silicon, or an alloy material containing the element, or It is a single layer or a layer formed of a compound material containing an element. The crystal structure of the layer containing silicon is
It may be amorphous, microcrystalline or polycrystalline. Embodiment 1 can be referred to for details.

Next, the first buffer layer 104 is formed on the first release layer 101a. The first buffer layer 104 is preferably formed of silicon nitride, silicon oxynitride, silicon nitride oxide, or the like in a single layer or a multilayer.

The first buffer layer 104 can be formed by a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. For example, the film formation temperature is set to 250 by a plasma CVD method.
By forming it as ° C or more and 400 ° C or less, a dense and very low water permeability membrane can be obtained. Note that the thickness of the first buffer layer 104 is preferably 10 nm to 3000 nm, more preferably 200 nm to 1500 nm.

Next, a conductive film is formed over the first buffer layer 104 and the insulating layer 103, and a gate electrode layer 106 is formed by photolithography (see FIG. 8A).

The material of the gate electrode layer 106 is molybdenum, titanium, chromium, tantalum, tungsten,
It can be formed in a single layer or in lamination using a metal material such as aluminum, copper, neodymium, scandium or an alloy material containing these elements.

Next, the gate insulating layer 108 is formed over the gate electrode layer 106. The gate insulating layer 108 is
Silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, or aluminum oxide can be formed in a single layer or stacked layers by a plasma CVD method, a sputtering method, or the like. For example, a silicon oxynitride film may be formed by a plasma CVD method using SiH ₄ or N ₂ O as a deposition gas.

Next, a semiconductor layer is formed, and an island-shaped semiconductor layer 110 is formed by photolithography (see FIG.
See FIG. 8 (A)).

The material of the semiconductor layer 110 can be formed using a silicon semiconductor or an oxide semiconductor. As a silicon semiconductor, single crystal silicon, polycrystalline silicon, or the like can be given, and as an oxide semiconductor, an In—Ga—Zn-based metal oxide can be used as appropriate. However, by using an oxide semiconductor which is an In—Ga—Zn-based metal oxide as the semiconductor layer 110 to form a semiconductor layer with low off-state current, leakage current of the light-emitting element to be formed later can be reduced. It is preferable because it can be suppressed. An oxide semiconductor which can be applied to the present invention will be described in Embodiment 4.

Next, a conductive film is formed over the gate insulating layer 108 and the semiconductor layer 110, and the source electrode layer 112a and the drain electrode layer 112b are formed by photolithography.

As a conductive film used for the source electrode layer 112a and the drain electrode layer 112b, for example,
use a metal film containing an element selected from l, Cr, Cu, Ta, Ti, Mo, W, or a metal nitride film (a titanium nitride film, a molybdenum nitride film, a tungsten nitride film) containing the above-described elements, etc. Can. In addition, high melting point metal films such as Ti, Mo, W or metal nitride films thereof (titanium nitride film, molybdenum nitride film, tungsten nitride film) on one side or both sides of the metal film such as Al and Cu. May be stacked. The conductive film used for the source electrode layer 112 a and the drain electrode layer 112 b may be formed using a conductive metal oxide. As conductive metal oxides, indium oxide (In ₂ O ₃ etc.), tin oxide (Sn O ₂ etc.), zinc oxide (ZnO), ITO, indium oxide zinc oxide (In ₂ O ₃ −
ZnO or the like) or those obtained by including silicon oxide in these metal oxide materials can be used.

Next, the electrode terminal 157 is formed. The electrode terminal 157 may be formed of a conductive film. The electrode terminal 157 may be formed simultaneously with the formation of the source electrode layer 112 a and the drain electrode layer 112 b.

Next, the first insulating layer 114 is formed over the semiconductor layer 110, the source electrode layer 112a, and the drain electrode layer 112b (see FIG. 8B). As the first insulating layer 114, an inorganic insulating film such as a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film can be used.

Next, the second insulating layer 116 is formed over the first insulating layer 114.

As the second insulating layer 116, an insulating film having a planarization function is preferably selected in order to reduce surface unevenness due to the transistor. For example, organic materials such as polyimide resin and acrylic resin can be used. In addition to the above organic materials, low dielectric constant materials (low-k materials) and the like can be used. Note that the second insulating layer 116 may be formed by stacking a plurality of insulating films formed using any of these materials.

Next, an opening which reaches the electrode terminal 157 and the drain electrode layer 112 b is formed in the first insulating layer 114 and the second insulating layer 116 by photolithography. The opening method may be appropriately selected from dry etching, wet etching, and the like.

Next, a conductive film is formed over the second insulating layer 116 and the drain electrode layer 112 b, and a first electrode layer 118 is formed by a photolithography step.

As the first electrode layer 118, a material that efficiently reflects light emitted by the layer 120 (to be formed later) containing an organic compound is preferable. Embodiment 1 can be referred to for details.

Next, the partition wall 124 is formed over the first electrode layer 118 (see FIG. 8C).

The partition wall 124 is formed using an organic insulating material or an inorganic insulating material. In particular, it is preferable to use a photosensitive resin material so that the side wall thereof is an inclined surface formed with continuous curvature.

A layer 120 containing an organic compound is formed in contact with the electrode terminal 157, the first electrode layer 118, and the partition wall 124. The reason for forming the layer 120 containing an organic compound on the electrode terminal 157 is to facilitate peeling of the adhesive layer 170 on the electrode terminal 157. Layer 12 containing an organic compound
Embodiment 1 and 2 can be referred to for materials which can be used for the 0 and second electrode layers 122.

Note that, in this embodiment, light emitted from the layer 120 containing an organic compound is a colored layer 166.
Although it illustrated about the structure inject | emitted via these, it is not limited to this. The layer 120 containing an organic compound may be separately applied to each color (for example, RGB) so that the colored layer 166 is not used. However, there is a fear that the number of steps and cost may be increased by separately coating the layer 120 containing an organic compound, so that the layer 120 containing an organic compound exhibiting white light emission described in this embodiment and a coloring A configuration with layer 166 is preferred.

Next, the second electrode layer 122 is formed over the layer 120 containing an organic compound (see FIG. 8D).
The second electrode layer 122 may also be formed on the electrode terminal 157.

The second electrode layer 122 can be formed using a light-transmitting metal oxide. Embodiment 1 can be referred to for applicable materials.

Note that one of the first electrode layer 118 and the second electrode layer 122 is a light emitting element 130.
The other functions as the cathode of the light emitting element 130. A material having a large work function is preferable for the electrode functioning as an anode, and a material having a small work function is preferable for the electrode functioning as the cathode.

Further, the light emitting element 130 is formed of the first electrode layer 118, the layer 120 containing an organic compound, and the second electrode layer 122.

The transistor 1 that controls the driving of the light emitting element on the first substrate 100 a through the above steps.
50, the transistor 151, and the light emitting element 130 are formed.

Next, the light shielding film 164, the colored layer 166, and the overcoat layer 1 are formed on the second substrate 100b.
The formation method of 68 is shown below.

First, the second release layer 101b is formed over the second substrate 100b, and the second buffer layer 162 is formed over the second release layer 101b (see FIG. 9A).

The second release layer 101 b and the second buffer layer 162 are the first release layer 101 described above.
and the same material and method as the first buffer layer 104 can be used.

Next, a passivation layer 163 and a conductive film are formed over the second buffer layer 162, and the conductive film is processed using a photolithography method to form a light shielding film 164 (see FIG. 9B).

The light shielding film 164 can prevent color mixing between pixels. As the light shielding film 164, a metal film with low reflectance such as titanium or chromium, an organic resin film impregnated with a black pigment or a black dye, or the like can be used.

Next, the coloring layer 166 is formed over the passivation layer 163 and the light shielding film 164.

The colored layer 166 is a colored layer that transmits light in a specific wavelength band. For example, a red (R) color filter that transmits light in the red wavelength band, a green (G) color filter that transmits light in the green wavelength band, and a blue (B) that transmits light in the blue wavelength band A color filter or the like can be used. Each color filter is formed at a desired position using a known material and by a printing method, an inkjet method, an etching method using a photolithography method, or the like.

In addition, although the method using three colors of RGB was demonstrated here, it is not limited to this,
A configuration using four colors such as RGBY (yellow) or a configuration with five or more colors may be used.

Next, an overcoat layer 168 is formed over the light shielding film 164 and the coloring layer 166 (see FIG. 9C).

The overcoat layer 168 can be formed of an organic resin film such as an acrylic resin or a polyimide resin. The overcoat layer 168 can prevent diffusion to the layer 120 side containing an organic compound such as an impurity component contained in the colored layer 166. Further, the overcoat layer 168 may have a laminated structure of an organic resin film and an inorganic insulating film. As the inorganic insulating film, silicon nitride, silicon oxide, or the like can be used. In addition, overcoat layer 1
68 may be omitted.

In addition, when the resin used for the adhesive layer 170 is applied on the second substrate 100b when the adhesive layer 170 is formed later, a material having high wettability to the resin may be used as the material of the overcoat layer 168. preferable. In particular, as a material used for the overcoat layer 168, it is desired that the transmittance is high, that it does not react when it comes in contact with the resin, and that it does not dissolve in the solvent used when applying the resin. For example, it is preferable to use, as the overcoat layer 168, an oxide conductive film such as an ITO film or a metal film such as an Ag film which is thin enough to transmit light.

By the above steps, the second peeling layer 101b and the second buffer layer 1 are formed on the second substrate 100b.
62, the passivation layer 163, the light shielding film 164, the coloring layer 166, and the overcoat layer 168 can be formed. In this embodiment, since the colored layer 166 is formed on the second substrate 100b, the bonding accuracy with the first substrate 100a described below is 10p.
More preferably, it can be 5 ppm or less.

Next, the first substrate 100a and the second substrate 100b are aligned, and bonding is performed using an adhesive layer 170 (see FIG. 10A).

  Embodiment 1 can be referred to for materials that can be used for the adhesive layer 170.

In addition, a sealing film with low moisture permeability may be formed between the adhesive layer 170 and the second electrode layer 122. For example, silicon oxide, silicon nitride, aluminum oxide or the like can be used as the sealing film with low moisture permeability.

Next, peeling (separation) is performed between the second peeling layer 101b formed on the second substrate 100b and the second substrate 100b (see FIG. 10B). Various methods can be used for the peeling method.

The sizes in the planar direction of the first release layer 101a formed on the first substrate 100a and the second release layer 101b formed on the second substrate 100b may be different. For example, the first substrate 1 can be formed by forming the second release layer 101 b smaller than the first release layer 101 a.
The groove is easily formed in the second peeling layer 101 b after bonding the 00 a and the second substrate 100 b, which is preferable.

As a peeling method, mechanical force may be applied (processing of peeling with a human hand or a jig, processing of separating while rotating a roller, ultrasonic processing, or the like). Alternatively, a liquid may be dropped in the groove, and the liquid may be made to permeate the interface between the second peeling layer 101 b and the second buffer layer 162 to peel the second buffer layer 162 from the second peeling layer 101 b. Also in the groove NF ₃
, A fluorinated gas such as BrF ₃ or ClF ₃ is introduced, and the second peeling layer 101 b is etched away with the fluorinated gas to remove the second buffer layer 162 from the second substrate 100 b having the insulating surface May be used.

For example, a metal (eg, tungsten, molybdenum, titanium or the like) which is easily oxidized as the second peeling layer 101 b or an alloy containing the
For example, silicon oxide or the like is used, and a heat treatment is performed after the second buffer layer 162 is formed, whereby a metal oxide layer is formed at these interfaces. The second release layer 101 b and the second buffer layer 162 can be separated by the metal oxide layer. At this time, either one of the surface of the second peeling layer 101b after peeling and the surface of the second buffer layer 162,
Or, the metal oxide layer may be attached to both. Also, the second buffer layer 162
In some cases, a part of the second release layer 101b may be attached to the Here, when the metal oxide layer is formed, the surface of the second release layer 101b is subjected to an oxidation treatment such as thermal oxidation or plasma oxidation before the second buffer layer 162 is formed, and the second release layer is formed. A layer of metal oxide may be formed on the surface of 101b.

As described above, peeling may be performed between the second peeling layer 101 b and the second buffer layer 162. In that case, the second peeling layer 101b is peeled together with the second substrate 100b, and the second peeling layer 101b does not remain in the manufactured light emitting device.

As another peeling method, when the second peeling layer 101 b is formed of tungsten, peeling can be performed while etching the second peeling layer 101 b with a mixed solution of ammonia water and hydrogen peroxide water.

In addition, a film containing nitrogen, oxygen, hydrogen, or the like (eg, an amorphous silicon film containing hydrogen, a hydrogen-containing alloy film, an oxygen-containing alloy film, or the like) is used as the second peeling layer 101b, and light is transmitted as the second substrate 100b. When a substrate having conductivity is used, the second peeling layer 101b is irradiated with laser light from the second substrate 100b to vaporize nitrogen, oxygen or hydrogen contained in the peeling layer, and the second substrate 10 is formed.
A method of peeling between 0b and the second peeling layer 101b can be used.

Next, the flexible substrate 502 is attached to the second buffer layer 162 using the second organic layer 700 b (see FIG. 11A).

As the flexible substrate 502, a flexible substrate and a transparent substrate for visible light can be used. Alternatively, for the flexible substrate 502, a substrate having a touch panel function may be used. For example, a substrate in which a light transmitting conductive film is formed on one surface of the flexible substrate 502 may be used. Although various methods can be used as a detection method of the touch panel, a projected capacitive method is preferable. By providing the flexible substrate 502 with a touch panel function, the light-emitting device can be thinned.

Note that since the light-emitting device described in this embodiment is a top-emission-type light-emitting device in which light emission is extracted from the surface on the side of the flexible substrate 502, the first substrate 100a is a thin film to the extent that it does not transmit light. Metal substrates may be used. The metal substrate is provided on the side which does not extract light. The material constituting the metal substrate is not particularly limited, but aluminum, copper, nickel, an alloy of metals such as aluminum alloy or stainless steel, and the like can be suitably used.

When a fibrous body is included in the material of the substrate 502 having flexibility, the fibrous body is a high strength fiber of an organic compound or an inorganic compound. The high-strength fiber specifically refers to a fiber having a high tensile modulus or Young's modulus, and representative examples include polyvinyl alcohol fibers, polyester fibers, polyamide fibers, polyethylene fibers, aramid fibers, Polyparaphenylene benzobisoxazole fibers, glass fibers, or carbon fibers can be mentioned. As glass fiber, glass fiber using E glass, S glass, D glass, Q glass etc. is mentioned. These may be used in the form of a woven or non-woven fabric, and a structure obtained by impregnating the fibrous body with an organic resin and curing the organic resin may be used as the flexible substrate 502. The use of a structure made of a fibrous body and an organic resin as the flexible substrate 502 is preferable because the reliability against breakage due to bending or local pressure is improved.

As the second organic layer 700 b, various curable adhesives such as a photocurable adhesive such as an ultraviolet curable adhesive, a reaction curable adhesive, a thermosetting adhesive, or an anaerobic adhesive can be used. An epoxy resin, an acrylic resin, a silicone resin, a phenol resin etc. can be used as a material of these adhesives.

When a prepreg is used as the flexible substrate 502, the second organic layer 70 is used.
The flexible substrate 502 and the second buffer layer 162 may be pressure-bonded and attached without using 0b.

Next, peeling (separation) is performed between the first peeling layer 101a formed on the first substrate 100a and the first substrate 100a, and bonding of the flexible substrate 501 is performed using the first organic layer 700a. (See FIG. 11 (B)).

The peeling method can be performed by the same method as the method of peeling between the second peeling layer 101 b formed on the second substrate 100 b and the second buffer layer 162 described above. The flexible substrate 501 and the first organic layer 700a can be formed using the same material and method as the flexible substrate 502 and the second organic layer 700b, respectively.

As described above, the peeling may be performed between the first peeling layer 101 a and the first buffer layer 104. In that case, the first peeling layer 101a is peeled together with the first substrate 100a, and the first peeling layer 101a does not remain in the manufactured light emitting device.

In addition, as described above, using a metal or alloy which is easily oxidized as the first peeling layer 101a,
When peeling is performed with a metal oxide layer obtained by oxidizing this, the metal oxide may be formed on one or both of the surface of the first peeling layer 101 a and the surface of the first buffer layer 104. Layers may stick.

In the case of a bottom-emission light-emitting device in which light emission is extracted from the surface on the side of the flexible substrate 501, a substrate having a touch panel function may be used as the flexible substrate 502.

Through the above steps, a light-emitting device formed over a flexible substrate can be manufactured.

Moreover, although the method of peeling the 1st substrate 100a after exfoliating the 2nd substrate 100b was illustrated in this embodiment, the invention indicated in this specification is not restricted to this, but peels the 1st substrate 100a. After that, the second substrate 100b may be peeled off.

Further, in this embodiment mode, the method for separating the first substrate 100 a from the light emitting element 130 and the transistor 150 formed over the first substrate 100 a and transferring the first substrate 100 a to the flexible substrate 501 is exemplified. However, the invention disclosed in this specification is not limited thereto, and a flexible substrate 50
Alternatively, the transistor 150, the light emitting element 130, and the like may be formed directly.

Next, the flexible substrate 502 and the second organic layer 700b are cut from the flexible substrate 502 side so as to surround a portion overlapping the electrode terminal 157 (FIG. 12A).

Next, a second organic layer 700b is cut to surround a portion overlapping with the electrode terminal 157.
Part of the light emitting device may be pulled in a direction to be pulled away from the light emitting device. Since the interface between the layer 120 containing an organic compound and the electrode terminal 157 has low adhesion, the electrode terminal 157 can be exposed (see FIG.
FIG. 12 (B).

Next, the hole opened in the above is filled with the conductive layer 600. The conductive layer 600 is preferably formed of silver paste or the like. The conductive layer 600 is electrically connected to a terminal having an FPC 4518 through an anisotropic conductive film 4519, and an external power supply and an external signal can be input to a transistor in the light emitting device or the like. Alternatively, without using the anisotropic conductive film 4519, an anisotropic conductive film or an anisotropic conductive paste is used as the conductive layer 600;
After the electrode 18 is disposed on the upper layer, the FPC 4518 and the electrode terminal 157 may be electrically connected through the conductive layer 600 by thermocompression bonding. Alternatively, instead of the FPC, a method of directly mounting an IC chip may be used.

In addition, although an active matrix light-emitting device is illustrated as one of light-emitting devices in this embodiment, the present invention can also be applied to a passive matrix light-emitting device.

As described above, in the light-emitting device described in this embodiment, the layer 120 containing an organic compound and the second electrode layer 122 are formed in contact with the electrode terminal 157. Since the interface between the layer 120 containing an organic compound and the electrode terminal 157 has low adhesion, a hole is formed by peeling off the adhesive layer 170 overlapping the electrode terminal 157, the second organic layer, and the flexible substrate. Can.

Here, as described above, when peeling between the peeling layer and the buffer layer at the time of peeling of the first substrate 100a and the second substrate 100b, the light emitting device manufactured as shown in FIG. Will not survive. FIG. 16 is a schematic cross-sectional view of the light emitting device in the case where neither the first peeling layer 101 a nor the second peeling layer 101 b remains. By providing a configuration in which the peeling layer is not present on the side from which light emission from the light emitting element 130 is extracted, the extraction efficiency of light emission from the light emitting device can be improved.

Note that in the case where the peeling layer is left in the light-emitting device, a light-transmitting material is preferably used as the peeling layer used on the side from which light emission from the light-emitting element 130 is taken out. Further, in the case of using a metal film, an alloy film, or a semiconductor film as the peeling layer, it is preferable to be thin enough to transmit light.

In addition, the method for manufacturing a light-emitting device of one embodiment of the present invention is suitable in the case where so-called multiple chamfering is performed in which a plurality of light-emitting devices are manufactured at the same time on a large substrate. For example, the first substrate 100 a and the second substrate 100 a
A plurality of light-emitting devices are manufactured over a flexible substrate using a large substrate of the same size as the substrate 100 b. After that, after being divided into each light emitting device, the electrode terminal 157 electrically connected to the FPC 4518 can be exposed.

For example, in the case of performing multi-chamfering using a conventional method, the division makes the division position of the flexible substrate 502 different from the division position of the flexible substrate 501 in order to expose the electrode terminal 157. I needed it. However, in this method, flexible substrates 501 and 502 are used.
And the substrate 5 having flexibility over the electrode terminal 157 because the
It was difficult to remove 02. According to the method for manufacturing a light-emitting device of one embodiment of the present invention, the flexible substrates 501 and 502 can be divided at the same position, so many light-emitting devices can be manufactured simultaneously with high yield. Can be enhanced.

Furthermore, by using substrates of the same size as the first substrate 100a and the second substrate 100b,
Since it is not necessary to prepare substrates of different sizes, it is possible to share the type of substrate to be used and the manufacturing apparatus (for example, a film forming apparatus), and productivity can be improved. Further, by using substrates of the same size for these substrates, it is possible to suppress a problem that a stress is concentrated on a film constituting the light emitting device and a crack is generated when peeling (separating) each substrate. .

This embodiment can be implemented in appropriate combination with the structures described in the other embodiments.

Third Embodiment
<Structure of Light Emitting Element>
The light-emitting element 130 illustrated in FIG. 13A includes a pair of electrodes (a first electrode layer 118 and a second electrode layer 1).
22) A layer 120 containing an organic compound is sandwiched between the layers. In the following description of the present embodiment, as an example, the first electrode layer 118 is used as an anode, and the second electrode layer 122 is used.
Is used as a cathode.

The layer 120 containing an organic compound may be formed to include at least a light emitting layer, and may have a laminated structure including functional layers other than the light emitting layer. As functional layers other than the light emitting layer, substances having high hole injecting property, substances having high hole transporting property, substances having high electron transporting property, substances having high electron injecting property, bipolar property (electron and hole transporting properties It is possible to use a layer containing a high substance) or the like. Specifically, functional layers such as a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer can be used in combination as appropriate.

In the light emitting element 130 shown in FIG. 13A, current flows due to the potential difference generated between the first electrode layer 118 and the second electrode layer 122, and holes and electrons are recombined in the layer 120 containing an organic compound. Emits light. That is, the light emitting region is formed in the layer 120 containing an organic compound.

In the present invention, light emission from the light emitting element 130 is extracted outside from the first electrode layer 118 or the second electrode layer 122 side. Therefore, the first electrode layer 118 or the second electrode layer 122
One of them is made of a translucent material.

Note that a plurality of layers 120 containing an organic compound may be stacked between the first electrode layer 118 and the second electrode layer 122 as shown in FIG. 13B. In the case of having a stacked structure of n (n is a natural number of 2 or more) layers, a layer 1 including an m (m is a natural number, m is 1 or more and n-1 or less) organic compounds
Between the 20th and the (m + 1) th organic compound-containing layer 120, respectively.
It is preferable to provide 20a.

The charge generation layer 120a may be formed by appropriately combining a composite material of an organic compound and a metal oxide, a metal oxide, a composite material of an organic compound and an alkali metal, an alkaline earth metal, or a compound thereof, or the like. Can. As a composite material of an organic compound and a metal oxide,
For example, the organic compound and metal oxide such as vanadium oxide, molybdenum oxide, or tungsten oxide are included. As the organic compound, various compounds such as aromatic amine compounds, carbazole derivatives, low molecular weight compounds such as aromatic hydrocarbons, or oligomers, dendrimers, polymers, etc. having a low molecular weight compound thereof as a basic skeleton may be used. it can. In addition, as an organic compound, it is preferable to apply the thing whose hole mobility is 10 ^<-6 > cm ^{< 2} > / Vs or more as a hole transportable organic compound. However, any substance other than these may be used as long as the substance has a hole transportability higher than that of electrons. Note that since these materials used for the charge generation layer 120 a have excellent carrier injection and transport properties, low current driving and low voltage driving of the light emitting element 130 can be realized.

Note that the charge generation layer 120a may be formed by combining a composite material of an organic compound and a metal oxide with another material. For example, a layer containing a composite material of an organic compound and a metal oxide may be formed in combination with a layer containing one compound selected from among electron donating substances and a compound having a high electron transporting property. Alternatively, a layer containing a composite material of an organic compound and a metal oxide may be combined with a transparent conductive film.

The light emitting element 130 having such a configuration is less likely to cause problems such as energy transfer and extinction, and it is easy to make the light emitting element having both a high luminous efficiency and a long lifetime by broadening the range of choice of materials. . It is also easy to obtain phosphorescence in one of the light emitting layers and fluorescence in the other.

Note that the charge generation layer 120 a is positive with respect to the layer 120 including one of the organic compounds formed in contact with the charge generation layer 120 a when a voltage is applied to the first electrode layer 118 and the second electrode layer 122. It has a function of injecting holes and a function of injecting electrons into the layer 120 containing the other organic compound.

The light-emitting element 130 illustrated in FIG. 13B can obtain various emission colors by changing the type of light-emitting substance used for the layer 120 containing an organic compound. In addition, by using a plurality of light-emitting substances having different emission colors as the light-emitting substance, light emission with a broad spectrum or white light emission can also be obtained.

When white light emission is obtained using the light-emitting element 130 illustrated in FIG. 13B, the combination of the layers 120 including a plurality of organic compounds may be configured to emit white light including red, blue, and green lights. For example, a configuration having a first light emitting layer containing a blue fluorescent material as a light emitting material and a second light emitting layer containing a green and red phosphorescent material as a light emitting material can be mentioned. In addition, a first light emitting layer showing red light emission, a second light emitting layer showing green light emission, and a third light emitting layer showing blue light emission
And the light emitting layer of Alternatively, white light emission can be obtained even with a configuration having a light emitting layer that emits light in a complementary color relationship. When the luminescent color of the light emission obtained from the first light emitting layer and the luminescent color of the light emission obtained from the second light emitting layer are in a complementary color relationship in a stacked element in which two light emitting layers are stacked, the complementary color relationship Are blue and yellow or blue green and red.

In the above-described structure of the stacked element, by disposing the charge generation layer between the light emitting layers to be stacked, a long life element can be realized in a high luminance region while keeping the current density low. . In addition, since the voltage drop due to the resistance of the electrode material can be reduced, uniform light emission over a large area is possible.

This embodiment can be implemented in appropriate combination with the structures described in the other embodiments.

Embodiment 4
In this embodiment, an oxide semiconductor that can be used for the semiconductor layer in Embodiment 2 will be described in detail.

As an oxide semiconductor used for a semiconductor layer of a transistor, at least indium (In
Or zinc (Zn) is preferred. In particular, it is preferable to contain In and Zn.
In addition to them, it is preferable to have a stabilizer that strongly links oxygen.
As a stabilizer, at least one of gallium (Ga), tin (Sn), zirconium (Zr), hafnium (Hf) and aluminum (Al) may be included.

As other stabilizers, lanthanoids such as lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb) , Dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb),
It may have any one or more of lutetium (Lu).

For example, In-Sn-Ga-Zn-based oxide, In-Ga-Zn-based oxide, In-Sn
-Zn-based oxide, In-Zr-Zn-based oxide, In-Al-Zn-based oxide, Sn-Ga-
Zn-based oxide, Al-Ga-Zn-based oxide, Sn-Al-Zn-based oxide, In-Hf-
Zn-based oxide, In-La-Zn-based oxide, In-Ce-Zn-based oxide, In-Pr-Z
n-based oxide, In-Nd-Zn-based oxide, In-Sm-Zn-based oxide, In-Eu-Zn
Oxide, In-Gd-Zn oxide, In-Tb-Zn oxide, In-Dy-Zn oxide, In-Ho-Zn oxide, In-Er-Zn oxide, In -Tm-Zn-based oxide, In-Yb-Zn-based oxide, In-Lu-Zn-based oxide, In-Zn-based oxide,
Sn-Zn based oxide, Al-Zn based oxide, Zn-Mg based oxide, Sn-Mg based oxide,
In-Mg-based oxides, In-Ga-based oxides, In-based oxides, Sn-based oxides, Zn-based oxides, and the like can be used.

Here, for example, an In—Ga—Zn-based oxide means an oxide containing In, Ga and Zn as main components, and there is no limitation on the ratio of In, Ga and Zn.

Alternatively, a material represented by InMO ₃ (ZnO) _m (m> 0) may be used as the oxide semiconductor. M represents one or more metal elements selected from Ga, Fe, Mn, and Co. In addition, as an oxide semiconductor, In ₂ SnO ₅ (ZnO) _n (n> 0)
Materials represented by) may be used.

For example, In: Ga: Zn = 3: 1: 2, In: Ga: Zn = 1: 1: 1 or In:
An In—Ga—Zn-based oxide having an atomic ratio of Ga: Zn = 2: 2: 1 or an oxide near the composition thereof can be used. Or In: Sn: Zn = 1: 1: 1, In: Sn: Zn =
It is preferable to use an In—Sn—Zn-based oxide having an atomic ratio of 2: 1: 3 or In: Sn: Zn = 2: 1: 5, or an oxide near the composition thereof.

Note that, for example, the atomic ratio of In, Ga, and Zn is In: Ga: Zn = a: b: c (a + b).
The composition of the oxide in which + c = 1) has an atomic ratio of In: Ga: Zn = A: B: C (A + B +)
The vicinity of the composition of the oxide of C = 1) means that a, b and c satisfy the formula (1).

(A−A) ² + (b−B) ² + (c−C) ² ≦ r ² (1)

As r, for example, it may be 0.05. The same applies to other oxides.

However, the composition is not limited to these, and one having an appropriate composition may be used according to the required semiconductor characteristics (field effect mobility, threshold voltage, etc.). Further, in order to obtain the required semiconductor characteristics, it is preferable to set the carrier concentration, impurity concentration, defect density, atomic ratio of metal element to oxygen, interatomic distance, density and the like to be appropriate.

In addition, in a transistor in which an oxide semiconductor is used for a semiconductor layer, the off-state current (here, in the off state, the potential difference with the gate potential with respect to the source potential, for example) is obtained by purifying the oxide semiconductor. Of the drain current when the threshold voltage is below the threshold voltage) can be made sufficiently low. For example, high purification of the oxide semiconductor can be realized by preventing hydrogen and a hydroxyl group from being contained in the oxide semiconductor by heating film formation, or removing from the film by heating after film formation. The transistor is purified by using an In—Ga—Zn-based oxide in the channel region, and the off-state current per channel width is 1 × 10 ⁻²⁴ A / μm (1 yA).
It is possible to set it to about 1 × 10 ^-22 A / μm (100 yA / μm) to about 10 μm / μm.

The oxide semiconductor film that can be used for the semiconductor layer may have, for example, a non-single crystal. The non-single crystal has, for example, CAAC (C Axis Aligned Crystal), polycrystal, microcrystalline, or amorphous part. The amorphous part has a higher density of defect states than microcrystalline or CAAC. In addition, microcrystals have a higher density of defect states than CAAC. Note that an oxide semiconductor having a CAAC can be converted to a CAAC-OS (C Axis Aligned Crystalline).
It is called Oxide Semiconductor).

Preferably, the oxide semiconductor film is a CAAC-OS film. The CAAC-OS is, for example, c-axis oriented, and the a-axis or / and the b-axis are not aligned with the macro.

The oxide semiconductor film may have, for example, microcrystalline. Note that an oxide semiconductor having microcrystalline is referred to as a microcrystalline oxide semiconductor. The microcrystalline oxide semiconductor film is, for example, 1 nm to 10 nm
Microcrystals (also referred to as nanocrystals) of less than the size are included in the film.

The oxide semiconductor film may have an amorphous portion, for example. Note that an oxide semiconductor having an amorphous portion is referred to as an amorphous oxide semiconductor. The amorphous oxide semiconductor film has, for example, disordered atomic arrangement and no crystalline component. Alternatively, the amorphous oxide semiconductor film is, for example, completely amorphous and does not have a crystal part.

Note that the oxide semiconductor film may be a mixed film of a CAAC-OS, a microcrystalline oxide semiconductor, or an amorphous oxide semiconductor. The mixed film includes, for example, a region of an amorphous oxide semiconductor, a region of a microcrystalline oxide semiconductor, and a region of a CAAC-OS. The mixed film may have, for example, a stacked structure of a region of an amorphous oxide semiconductor, a region of a microcrystalline oxide semiconductor, and a region of a CAAC-OS.

  Note that the oxide semiconductor film may have, for example, a single crystal.

The oxide semiconductor film preferably includes a plurality of crystal parts, and c axes of the crystal parts are preferably aligned in a direction parallel to a normal vector of the formation surface or a normal vector of the surface. Note that the directions of the a-axis and the b-axis may be different between different crystal parts. A CAAC-OS film is an example of such an oxide semiconductor film.

In most cases, the crystal part included in the CAAC-OS film fits in a cube whose one side is less than 100 nm. Also, a transmission electron microscope (TEM: Transmission E)
In the observation image by lectron Microscope, the boundary between the crystal part and the crystal part included in the CAAC-OS film is not clear. Further, grain boundaries (also referred to as grain boundaries) can not be confirmed in the CAAC-OS film by TEM. Therefore, in the CAAC-OS film, a decrease in electron mobility due to grain boundaries is suppressed.

The crystal parts included in the CAAC-OS film are, for example, the c-axis aligned in a direction parallel to the normal vector of the formation surface of the CAAC-OS film or the normal vector of the surface and viewed from the direction perpendicular to the ab plane It has a triangular or hexagonal atomic arrangement, and metal atoms are arranged in layers or metal atoms and oxygen atoms are arranged in layers when viewed from the direction perpendicular to the c-axis. Note that the directions of the a-axis and the b-axis may be different between different crystal parts. In the present specification, the term “perpendicular” also includes a range of 80 ° to 100 °, preferably 85 ° to 95 °. Moreover, when it only describes as parallel, it shall also be included from -10 degrees or more and 10 degrees or less, preferably -5 degrees or more and 5 degrees or less.

In the CAAC-OS film, distribution of crystal parts is not necessarily uniform. For example, CA
In the case where crystals are grown from the surface side of the oxide semiconductor film in the process of forming the AC-OS film, the proportion of the crystal parts in the vicinity of the surface may be higher than that in the vicinity of the formation surface. Also, C
By adding an impurity to the AAC-OS film, crystallization of a crystal part in the impurity addition region may be reduced.

The c-axis of the crystal part included in the CAAC-OS film is aligned parallel to the normal vector of the formation surface of the CAAC-OS film or the normal vector of the surface; therefore, the shape of the CAAC-OS film ( Depending on the cross-sectional shape of the surface to be formed or the cross-sectional shape of the surface), they may be directed in different directions. In addition, the crystal part is formed when a film is formed or when a crystallization process such as a heat treatment is performed after the film formation. Therefore, the c-axis of the crystal part is aligned in a direction parallel to the normal vector of the formation surface or the normal vector of the surface when the CAAC-OS film is formed.

Alternatively, the CAAC-OS can be formed, for example, by reducing the density of defect states. In the oxide semiconductor, for example, oxygen vacancies are defect levels. Oxygen vacancies can be trap levels or can be carriers of hydrogen by capturing hydrogen. CA
In order to form AC-OS, for example, it is important not to cause oxygen vacancies in an oxide semiconductor. Thus, the CAAC-OS is an oxide semiconductor with a low density of defect states. Alternatively, the CAAC-OS is an oxide semiconductor with few oxygen vacancies.

The low impurity concentration and the low density of defect levels (less oxygen deficiency) are called high purity intrinsic or substantially high purity intrinsic. A highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor may be able to reduce the carrier density because the number of carriers is small. Thus, in the transistor in which the oxide semiconductor is used for the channel formation region, the threshold voltage may be negative (also referred to as normally on) in some cases. In addition, since the high purity intrinsic or the substantially high purity intrinsic oxide semiconductor has a low defect state density, the trap state density may also be low. Therefore, a transistor in which the oxide semiconductor is used for a channel formation region may be a transistor with high reliability and small variation in electrical characteristics. Note that the charge trapped in the trap level of the oxide semiconductor takes a long time to disappear, and may behave like fixed charge. Therefore, in the transistor in which the oxide semiconductor with a high trap state density is used for the channel formation region, electrical characteristics may be unstable.

A transistor using a high-purity intrinsic or a substantially high-purity intrinsic CAAC-OS is
Variation of electrical characteristics due to irradiation of visible light or ultraviolet light is small. Thus, the transistor is highly reliable.

In the case of forming a CAAC-OS film by sputtering, it is preferable to increase the substrate temperature at the time of film formation. For example, the substrate heating temperature is 100 ° C. to 600 ° C., preferably 2
When the oxide film is formed at a temperature of 00 ° C. to 500 ° C., more preferably 150 ° C. to 450 ° C., a CAAC-OS film can be formed.

In addition, it is preferable to use a direct current (DC) power source as a power source used for the sputtering method. Note that a high frequency (RF) power supply or an alternating current (AC) power supply can also be used. However, RF
The power source is difficult to apply to a sputtering apparatus capable of forming a film on a large area substrate. In addition, it is considered that a DC power supply is preferable to an AC power supply from the viewpoint described below.

When an In—Ga—Zn—O compound target is used as a sputtering target, for example, InO _x powder, GaO _y powder, and ZnO _z powder are 2: 2: 1, 8: 4: 3,
3: 1: 1, 1: 1: 1, 4: 2: 3, 3: 1: 2, 3: 1: 4, 1: 6: 4, 1: 6:
It is preferable to use an In-Ga-Zn-O compound target formed by mixing in a molar ratio of 9 or the like. x, y and z are arbitrary positive numbers. The sputtering target may be polycrystalline.

Alternatively, the plasma space in the vicinity of the sputtering target may be densified by a magnetic field using a magnetron. In a magnetron sputtering apparatus, for example, a magnet assembly is disposed behind a sputtering target to form a magnetic field in front of the sputtering target. The magnetic field captures ionized electrons and secondary electrons generated by sputtering during sputtering of the sputtering target. Electrons captured in this manner increase the probability of collision with an inert gas such as a rare gas in the deposition chamber, resulting in an increase in plasma density. Thereby, for example, without raising the temperature of the element formation layer significantly.
The speed of film formation can be increased.

In the case of forming a CAAC-OS film by a sputtering method, for example, impurities (such as hydrogen, water, carbon dioxide, and nitrogen) existing in a film formation chamber of a sputtering apparatus are preferably reduced. Further, it is preferable to reduce impurities in the deposition gas. For example, CAAC-OS can be obtained by using a gas whose purity is raised to −40 ° C. or lower, preferably −80 ° C. or lower, and more preferably −100 ° C or lower, as a deposition gas of oxygen gas or argon gas.
Contamination of impurities into the film can be suppressed.

In the case of forming a CAAC-OS film by a sputtering method, it is preferable to increase the proportion of oxygen in a deposition gas and optimize power to suppress plasma damage during deposition. For example, the proportion of oxygen in the film formation gas is preferably 30% by volume or more, preferably 100% by volume.

In the case of forming a CAAC-OS film by sputtering, heat treatment may be performed in addition to the substrate heating at the time of film formation. By the heat treatment, for example, the impurity concentration in the oxide film can be reduced.

The heat treatment may be performed, for example, at a temperature of 350 ° C. or more and less than the strain point of the substrate, or at 350 ° C. or more and 450 ° C. or less. Note that the heat treatment may be performed multiple times.

As a heat treatment apparatus used for the above heat treatment, GRTA (Gas Rapid T
Hermal Annealing device or LRTA (Lamp Rapid The)
RTA (Rapid Thermal Anal) such as rmal Annealing equipment
Nealing) devices may be used. Note that without limitation thereto, another heat treatment apparatus such as an electric furnace may be used.

As shown in the above steps, the concentration of impurities contained in the oxide semiconductor film is reduced by preventing hydrogen, water, and the like from being contained in the film during film formation. Further, heat treatment may be performed after the oxide semiconductor film is formed to remove hydrogen, water, and the like contained in the oxide semiconductor film, whereby the impurity concentration may be reduced. After that, oxygen is supplied to the oxide semiconductor film to compensate for oxygen vacancies, whereby the oxide semiconductor film can be highly purified. Further, oxygen may be added to the oxide semiconductor film. The highly purified oxide semiconductor film is as close as possible to i-type (intrinsic semiconductor) or i-type. In addition, the carrier density of the oxide semiconductor film which is as close as possible to i-type is less than 1 × 10 ¹⁷ / cm ^3, less than 1 × 10 ¹⁵ / cm ³ , or 1 × 10 ¹³ / cm ^3.
Less than.

  The above is the description of the oxide semiconductor used for the semiconductor layer of the transistor.

Fifth Embodiment
In this embodiment, examples of electronic devices and lighting devices to which the light-emitting device of one embodiment of the present invention is applied will be described with reference to the drawings.

As an electronic device to which a light-emitting device having a flexible shape is applied, for example, a television (also referred to as a television or a television receiver), a monitor for a computer, a digital camera, a digital video camera, a digital photo frame, a mobile phone Examples include large-sized game machines such as a mobile phone (also referred to as a mobile phone and a mobile phone apparatus), a portable game machine, a portable information terminal, a sound reproduction apparatus, and a pachinko machine.

It is also possible to incorporate lighting and display devices along the inner or outer wall of a house or building, or along the curved surface of the interior or exterior of a car.

FIG. 14A illustrates an example of a mobile phone. The mobile phone 7400 has a housing 740.
In addition to the display portion 7402 incorporated in 1, the operation button 7403, the external connection port 7404,
A speaker 7405, a microphone 7406, and the like are provided. Note that the cellular phone 7400 is manufactured using the light-emitting device for the display portion 7402.

A mobile phone 7400 illustrated in FIG. 14A can be displayed by touching the display portion 7402 with a finger or the like.
You can enter information. Further, all the operations such as making a call and inputting characters can be performed by touching the display portion 7402 with a finger or the like.

By operating the operation button 7403, power on / off and types of images displayed on the display portion 7402 can be switched. For example, the mail creation screen can be switched to the main menu screen.

Here, the light-emitting device of one embodiment of the present invention is incorporated in the display portion 7402. Therefore, it is possible to provide a highly reliable mobile phone provided with a curved display portion.

FIG. 14B shows an example of a wristband type portable display device. Portable display 7
Reference numeral 100 denotes a housing 7101, a display portion 7102, operation buttons 7103, and a transmitting / receiving device 710.
It has four.

The portable display device 7100 can receive a video signal by the transmitting and receiving device 7104 and can display the received video on the display portion 7102. Also, audio signals can be sent to other receiving devices.

In addition, with the operation button 7103, power ON / OFF operation, switching of a displayed image, adjustment of sound volume, and the like can be performed.

Here, the light-emitting device of one embodiment of the present invention is incorporated in the display portion 7102. Therefore, a highly reliable portable display device including a curved display portion can be provided.

14C to 14E illustrate an example of the lighting device. The lighting device 7200, the lighting device 7210, and the lighting device 7220 each include a base 72 provided with an operation switch 7203.
And a light emitting unit supported by a pedestal 7201.

The lighting device 7200 illustrated in FIG. 14C includes a light emitting portion 7202 having a wave-like light emitting surface. Therefore, the lighting device has high design.

The light emitting unit 7212 included in the lighting device 7210 illustrated in FIG. 14D has a configuration in which two light emitting units that are convexly curved are symmetrically disposed. Therefore, all directions can be illuminated centering on the lighting device 7210.

The lighting device 7220 illustrated in FIG. 14E includes a light-emitting portion 7222 which is curved in a concave shape. Therefore, in order to condense light emission from the light emitting portion 7222 on the front surface of the lighting device 7220, it is suitable for illuminating a specific range brightly.

In addition, since each light emitting portion provided in the lighting device 7200, the lighting device 7210, and the lighting device 7220 has flexibility, the light emitting portion is fixed by a plastic member, a movable frame, or the like to emit light in accordance with the application. The light emitting surface of the part may be configured to be freely curved.

Here, the light-emitting device of one embodiment of the present invention is incorporated in the light-emitting portions 7202, 7212, and 7222. Therefore, it is possible to provide a highly reliable lighting device including the curved light emitting unit.

FIG. 15A illustrates an example of a portable display device. The display device 7300 includes a housing 7301, a display portion 7302, an operation button 7303, a drawer member 7304, and a control portion 730.
5 is provided.

The display device 7300 includes a flexible display portion 7302 wound in a roll shape in a cylindrical housing 7301.

Further, the display device 7300 can receive a video signal by the controller 7305 and can display the received video on the display portion 7302. Also, the control unit 7305 is equipped with a battery. In addition, the control unit 7305 may be provided with a connector to directly supply a video signal and power.

In addition, with the operation button 7303, power on / off operation, switching of a displayed image, and the like can be performed.

FIG. 15B shows a state where the display portion 7302 is pulled out by the pullout member 7304. An image can be displayed on the display portion 7302 in this state. Further, with the operation button 7303 disposed on the surface of the housing 7301, the user can easily operate with one hand.

Note that the display unit 732 is not bent when the display unit 7302 is pulled out.
A frame for reinforcement may be provided at the end of 02.

In addition to this configuration, a speaker may be provided in the housing, and audio may be output by an audio signal received together with the video signal.

The light-emitting device of one embodiment of the present invention is incorporated in the display portion 7302. Therefore, a flexible and highly reliable light-emitting device is applied to the display portion 7302. Therefore, the display device 7300 can be a lightweight and highly-reliable display device.

It is needless to say that the present invention is not particularly limited to the electronic devices and lighting devices described above as long as the light-emitting device of one embodiment of the present invention is included.

This embodiment can be implemented in appropriate combination with the other embodiments described in this specification.

100a first substrate 100b second substrate 101a first peeling layer 101b second peeling layer 103 insulating layer 104 buffer layer 106 gate electrode layer 108 gate insulating layer 110 semiconductor layer 112 a source electrode layer 112 b drain electrode layer 114 insulating layer 116 insulating layer 118 First electrode layer 120 layer containing an organic compound 120a charge generation layer 122 second electrode layer 124 partition wall 130 light emitting element 150 transistor 151 transistor 152 transistor 162 buffer layer 163 passivation layer 164 light shielding film 168 overcoat layer 157 electrode terminal 166 colored layer 170 Adhesive layer 501 Flexible substrate 502 Flexible substrate 600 Conductive layer 700 a First organic layer 700 b Second organic layer 901 Light emitting device 902 Light emitting device 903 Light emitting device 904 Light emitting device 4502 Pixel 4503 signal line circuit unit 4519 anisotropic conductive film 7100 portable display device 7101 housing 7102 display unit 7103 operation button 7104 transmitting / receiving device 7200 lighting device 7201 light emitting unit 7203 light emitting unit 7203 operation switch 7210 lighting device 7212 light emitting unit 7220 lighting device 7222 light emission Unit 7300 Display device 7301 Case 7302 Display unit 7303 Operation button 7304 Pull-out member 7305 Control unit 7400 Mobile phone 7401 Case 7402 Display unit 7403 Operation button 7404 External connection port 7405 Speaker 7406 microphone 7406

Claims (2)

A method for manufacturing a light-emitting device including a light-emitting element having a first electrode layer, a layer containing an organic compound, and a second electrode layer, and an electrode terminal,
Forming the first electrode layer and the electrode terminal above the substrate;
A partition is formed to cover an end of the first electrode layer;
A layer containing the organic compound is formed in contact with the first electrode layer, the partition wall, and the electrode terminal,
Through said layer containing an organic compound to form the second electrode layer to have a region overlapping with the first electrode layer and the electrode terminal,
The resin layer is formed on sides of the second electrode layer,
Forming a cut in the resin layer at a portion overlapping the electrode terminal;
After sticking an adhesive tape above the resin layer, the surface of the electrode terminal is removed by peeling off the adhesive tape and removing a part of the resin layer in a portion overlapping the electrode terminal. Exposed,
A method for manufacturing a light emitting device, comprising: forming a conductive layer in contact with a surface of the exposed electrode terminal. A method for manufacturing a light-emitting device including a light-emitting element having a first electrode layer, a layer containing an organic compound, and a second electrode layer, and an electrode terminal,
The first electrode layer and the electrode terminal are formed above the first substrate,
A partition is formed to cover an end of the first electrode layer;
A layer containing the organic compound is formed in contact with the first electrode layer, the partition wall, and the electrode terminal,
Through said layer containing an organic compound to form the second electrode layer to have a region overlapping with the first electrode layer and the electrode terminal,
The resin layer is formed on sides of the second electrode layer,
Peeling off the first substrate to bond a flexible second substrate;
After laminating the second substrate, a cut is formed in the resin layer in a portion overlapping the electrode terminal,
The surface of the electrode terminal is exposed by pulling the resin layer to remove a part of the resin layer in a portion overlapping the electrode terminal.
A method for manufacturing a light emitting device, comprising: forming a conductive layer in contact with a surface of the exposed electrode terminal.

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