JP6533835B2 - Method of processing a substrate and substrate carrier for holding a substrate - Google Patents

Description

  FIELD [0001] Embodiments of the present disclosure relate to methods of processing a substrate. More specifically, the present disclosure relates to depositing material on a substrate in a vacuum chamber while the substrate is held on the support surface of the substrate carrier. A further embodiment relates to a substrate carrier for holding a substrate, in particular a chucking assembly configured to hold a substrate while depositing material on the substrate in a vacuum chamber. A substrate carrier having

  [0002] Opto-electronic devices that make use of organic materials are becoming increasingly popular for a number of reasons. Organic optoelectronic devices have the potential of cost advantages over inorganic devices, since many of the materials used to fabricate such devices are relatively inexpensive. The intrinsic properties, flexibility, etc. of organic materials may be advantageous in applications such as deposition on flexible or non-flexible substrates. Examples of organic optoelectronic devices include organic light emitting devices (OLEDs), organic phototransistors, organic photovoltaic cells, and organic photodetectors.

  [0003] With respect to OLEDs, organic materials may have performance advantages over conventional materials. For example, the wavelength at which the organic light emitting layer emits light can be easily tuned using appropriate dopants. OLEDs utilize thin organic films that emit light when a voltage is applied across the device. OLEDs have become an increasingly interesting technology for use in applications such as flat panel displays, lighting, and backlighting.

  [0004] The substrate and the mask defining the pattern to be provided on the substrate are often held on the corresponding support by mechanical force. Conventional mechanical contacts used to hold the substrate and mask during processing can cause damage to the substrate due to the applied mechanical force. A mechanical force can be applied to hold the mask in place during processing. Conventional mechanical carriers may hold the substrate at its end, resulting in significant concentration of physical contact at the edge of the substrate to ensure clamping. This mechanical contact concentrated at the edge of the substrate may cause contamination or physical damage of the contacts, which may degrade the substrate.

  [0005] Newer processing systems incorporate an alternative mechanism for chucking the substrate to the substrate carrier, which avoids the aforementioned drawbacks. For example, an electrostatic chuck that uses electrostatic force holds the substrate in place. The contact force between components of the system and the substrate can be reduced.

  [0006] However, additional mechanisms are usually required to hold the mask in front of the substrate during deposition, which can lead to more complex handling and problems with mask and / or substrate positioning There is a case. For example, accurate three-dimensional positioning of the mask in front of the substrate at a distance close to the substrate without damaging the substrate can be extremely difficult.

  [0007] Therefore, there is a need for methods and apparatus for reliably and accurately positioning masks and substrates in processing systems while making handling easier.

  In view of the above, a method of processing a substrate, a substrate carrier for holding the substrate, and a deposition apparatus for depositing material on the substrate are provided.

  According to an aspect of the present disclosure, a method is provided for processing a substrate. The method uses a chucking device to attract the substrate to the support surface of the substrate carrier, place the mask in front of the substrate, partially release the substrate from the support surface, and material. Depositing on the substrate.

  [0010] According to a further aspect of the present disclosure, a substrate carrier is provided for holding a substrate during deposition. The substrate carrier is a chucking device configured to attract the substrate toward the support surface of the substrate carrier, and a second chucking device configured to attract the mask toward the support surface of the substrate carrier. The chucking device is configured to partially release the substrate from the support surface towards the mask during deposition.

  According to a further aspect of the present disclosure, there is provided a deposition apparatus for depositing material on a substrate. The deposition apparatus is configured to deposit a substrate on the substrate carried by the substrate carrier for holding the substrate during deposition according to any of the embodiments described herein. And a deposited source.

  [0012] Further aspects, advantages, and features of the present disclosure are apparent from the description herein and the accompanying drawings.

  [0013] A more specific description of the present disclosure, as briefly outlined above, can be obtained by reference to the embodiments so that the above features of the present disclosure can be understood in detail. The attached drawings relate to embodiments of the present disclosure and are described below. Exemplary embodiments are shown in the drawings and will be described in detail below.

1 schematically shows steps (a) to (d) of a method of processing a substrate according to embodiments described herein. FIG. 1 is a schematic cross-sectional view of a substrate carrier according to embodiments described herein. FIG. 1 is a schematic top view of a substrate carrier according to embodiments described herein. FIG. 1 is a schematic cross-sectional view of a substrate carrier according to embodiments described herein. FIG. 1 is a schematic view of a deposition apparatus according to embodiments described herein. FIG. 5 is a flow diagram illustrating a method of processing a substrate according to embodiments described herein.

  [0020] Reference will now be made in detail to various embodiments. One or more embodiments of them are shown in the figures. Each example is provided by way of illustration only and is not meant to be limiting. For example, features illustrated or described as part of one embodiment can be used in any other embodiment or in conjunction with any other embodiment to yield yet further embodiments. It is. The present disclosure is intended to include such modifications and variations.

  [0021] Within the following description of the drawings, the same reference numbers refer to the same or similar components. In general, only the differences with regard to the individual embodiments are described. Unless otherwise specified, the description of parts or aspects of one embodiment applies equally to corresponding parts or aspects of another embodiment.

  [0022] Figure 1 schematically illustrates the steps (a) to (d) during processing of a substrate 10 according to the embodiments described herein.

  In stage (a), the substrate 10 is attracted to the support surface 102 of the substrate carrier 100 using a chucking device 120 (eg, an electrostatic chuck). In FIG. 1, the substrate 10 is schematically illustrated as a rectangle held on the support surface 102 of the substrate carrier 100.

  In step (b), the mask 20 is placed in front of the substrate 10. The mask may have an open pattern depending on the material pattern deposited on the front surface of the substrate, but the back surface of the substrate 10 may be in direct contact with the support surface 102 of the substrate carrier. In some embodiments, the mask 20 can be fixed to the mask frame 25 to stabilize the mask.

[0025] In step (c), the substrate 10 is partially released from the support surface. For example, chucking device 120 may be configured to release a portion of the substrate from support surface 102. To partially open the substrate from the support surface may have the effect that the period of gap 28 between the substrate 10 and the mask 20 or at least partially reduce, or eliminate.

  [0026] In the embodiment shown in FIG. 1, the substrate, for example, by partially reducing the chucking force of the chucking device 120 or by partially deactivating the chucking device 120. The end region 12 of the is released from the support surface 102. The end region 12 of the substrate 10 may be pulled away from the support surface, for example by gravity, and curved towards the mask 20. In some embodiments, full contact between the substrate and the mask can be established. For example, 90% or more of the front surface of the substrate, in particular the entire front surface of the substrate, can be contacted by the mask.

[0027] In step (d), material 105 is deposited on the substrate. Substrate carrier 100 may be configured to support substrate 10 while depositing material on the substrate. Results period of gap 28 between the mask and the substrate is reduced, there is a case where the shadowing effect of the mask 20 is reduced, it is possible to improve the quality of the deposited pattern of material on a substrate.

  [0028] In some embodiments, which can be combined with other embodiments described herein, the substrate carrier 100 passes through the substrate 10 through the vacuum chamber of the deposition apparatus described in more detail below. It can be used to carry. Details of the substrate carrier, such as a transport device for transferring the substrate carrier through the vacuum chamber, are not shown in the drawings. For example, the substrate carrier on which the substrate is held can be moved into the vacuum chamber. In the vacuum chamber, the material 105 can be deposited on a substrate and then the substrate carrier can be moved out of the vacuum chamber.

  [0029] In some embodiments, which can be combined with other embodiments described herein, holding the substrate 10 in a substantially vertical orientation at least temporarily on the support surface 102 during processing. Can. For example, the substrate may be held in a substantially vertical orientation while being transported through the vacuum chamber and / or while depositing material on the substrate.

  [0030] "Substantially perpendicular" as described herein may be understood as the orientation of the substrate, and the direction (gravity vector) perpendicular to the major surface of the substrate is 0 ° and +/- It forms an angle between 20 °, in particular between 0 ° and less than +/− 10 °. The orientation of the substrate may not be (strictly) perpendicular during deposition, but is slightly inclined, for example at an inclination angle of 0 ° to -5 °, with respect to the vertical axis. Negative angles refer to an orientation in which the substrate is directed slightly downward. This vertical deviation may be beneficial. Because, substrate orientation with some deviation from vertical orientation may result in a more stable substrate deposition process, or downward substrate orientation is appropriate to reduce particles on the substrate during deposition. It is because it gets. However, (strictly) perpendicular orientations (between -1 and +1 degrees with respect to the vertical direction) are also possible.

  Thus, the support surface 102 of the substrate carrier 100 may also be oriented (+/− 20 °) at least temporarily essentially vertically during processing of the substrate. It is difficult to maintain large area substrates in an essentially vertical orientation. Because the weight of the substrate may cause the substrate to bow, the substrate may slide off the support surface if the gripping force of the chucking device 120 is not sufficient, and / or may be placed in front of the substrate 20. Because the substrate may move.

  [0032] In some embodiments, the substrate may be held at least temporarily during processing, for example, in an essentially horizontal orientation at a downward facing position. For example, the substrate can be held facing downward on an essentially horizontal support surface. The downward facing substrate position may be beneficial to minimize particle entrapment on the substrate surface.

  [0033] In some embodiments, the substrate carrier 100 is movable (eg, pivotable) between vertical and non-vertical (eg, horizontal) orientations and / or vice versa The For example, the substrate can be disposed and attracted onto the support surface 102 in a non-vertical orientation, and subsequently, the substrate carrier 100 with the attracted substrate can be moved (e.g., into a substantially vertical orientation, for example, using a swing module) , And the substrate may be transported and / or further processed in an essentially vertical orientation.

  After processing, the substrate may be moved from an essentially vertical orientation to a non-vertical orientation (eg, essentially horizontal orientation), for example, in a swing module. The substrate may then be released from the non-vertically oriented support surface and removed.

  [0035] Substrate 10 may be held by substrate carrier 100 during transport and / or processing. For example, during deposition, during transport of a substrate through a vacuum processing system, and / or during loading into and unloading from one or more vacuum chambers, the substrate may be a substrate carrier Can be held by

  [0036] One or more thin layers may be deposited on the substrate while the substrate is held in the substrate carrier. For example, a stack of layers comprising at least one organic material may be deposited on the substrate, for example by evaporation.

  [0037] According to embodiments of the present disclosure, an in-line or batch processing system having one or more transfer devices for transferring one or more substrate carriers with their respective substrates along the transfer path. It can be used. In some implementations, the transport device can be provided as a magnetic levitation system for holding the substrate carrier suspended. Optionally, the in-line processing system may use a magnetic drive system configured to move or transport the substrate carrier along the transport path in the transport direction. The magnetic drive system can be included in the magnetic levitation system or can be provided as a separate entity.

  [0038] In some implementations, a mechanical transport system can be provided. The transport system may include a roller for transporting the substrate carrier in the transport direction, and a drive for rotating the roller may be provided. The mechanical transport system is easy to implement, robust, durable and easy to maintain.

  [0039] In some embodiments, the substrate 10 can be held by the support surface 102 of the substrate carrier 100 while depositing the coating material on the substrate. For example, chemical vapor deposition (CVD) processes, physical vapor deposition (PVD) systems (eg, sputter systems), and / or evaporation systems may be used in vacuum chambers, eg, for display applications, such as substrates (eg, for display applications). Developed to coat the glass substrate). In a typical vacuum processing system, each substrate may be held by a substrate carrier, and the substrate carrier may be transported through the vacuum processing chamber by a corresponding transport device. The substrate carrier can be moved by the transport device such that at least a portion of the major surface of the substrate is exposed towards the deposition source (e.g., a sputtering or evaporation device). The major surface of the substrate may be coated with a thin material pattern, but the substrate may be positioned in front of the deposition source. The deposition source may pass through the substrate at a predetermined rate. Alternatively, the substrate can be transported past the deposition source at a predetermined rate.

  [0040] The substrate 10 may be, for example, a non-flexible substrate, such as a wafer, a slice of a transparent crystal such as sapphire, a glass substrate, or a ceramic plate. However, the present disclosure is not limited thereto, and the term "substrate" may also encompass flexible substrates such as webs or foils (eg, metal or plastic foils).

[0041] In some embodiments, the substrate can be a large area substrate. The large area substrate can have a surface area of 0.5 m ² or more. In particular, large area substrates may be used for the manufacture of displays and may be glass substrates or plastic substrates. For example, the substrates described herein will include those commonly used in LCDs (Liquid Crystal Displays), PDPs (Plasma Display Panels), and the like. For example, a large area substrate can have a major surface in the area of 1 m ² or more. In some embodiments, the large area substrate is a GEN 4.5 corresponding to about 0.67 m ² of substrate (0.73 x 0.92 m), a substrate of about 1.4 m ² (1.1 x 1.3 m) Or GEN5 corresponding to. Furthermore, the large area substrate is GEN 7.5 corresponding to a substrate of about 4.29 m ² (1.95 m x 2.2 m), GEN 8 corresponding to a substrate of about 5.7 m ² (2.2 m x 2.5 m) The GEN 10 may correspond to a .5 or about 8.7 m ² substrate (2.85 m × 3.05 m). Further generations such as GEN11 and GEN12 and their corresponding substrate areas may be implemented in the same way. In some implementations, an array of smaller sized substrates having surface areas up to several cm ² (eg, 2 cm × 4 cm) and / or various individual shapes are positioned on a single substrate carrier It can be done.

  [0042] In some implementations, the thickness of the substrate in a direction perpendicular to the major surface of the substrate is 1 mm or less (eg, 0.1 mm to 1 mm), particularly 0.3 mm to 0.8 mm (eg, 0.7 mm). Thinner substrates are also possible. The handling of thin substrates less than 0.5 mm thick can be difficult.

  [0043] Holding the substrate on the support surface 102 of the substrate carrier 100 so as to avoid movement of the substrate and / or mask during deposition may be beneficial in terms of obtaining a superior coating. As the size of the substrate increases and the coating structure shrinks, correctly positioning the substrate on the support surface relative to the mask and accurately positioning the mask relative to the substrate become increasingly difficult .

  [0044] In some embodiments, which can be combined with other embodiments described herein, the substrate is attracted to the support surface 102 with an electrostatic chuck. A support surface 102 having an electrostatic chuck may be disposed within the carrier body 101 of the substrate carrier 100. In other words, the chucking device 120 configured to attract the substrate toward the support surface 102 may be an electrostatic chuck configured to attract the substrate 10 by electrostatic force. Attracting the substrate to the support surface using an electrostatic chuck allows for a reliable and accurate positioning of the substrate on the substrate carrier. The electrostatic chuck may be integrated into the carrier body 101 of the substrate carrier.

  [0045] The electrostatic chuck may be further referred to herein as an "e-chuck". The substrate can be made of a material that can be pulled to the support surface by electrostatic force so that the substrate can be in direct contact with the support surface. Substrate retention can be enabled during high temperature processing, coating processing, and plasma processing as well as in a vacuum environment.

  [0046] In some embodiments, which can be combined with other embodiments disclosed herein, the carrier body 101 includes a dielectric, and one or more electrodes of the electrostatic chuck are within the dielectric. Be incorporated. The dielectric may be made of a dielectric material. The dielectric material is, for example, a high thermal conductivity such as pyrolytic boron nitride, aluminum nitride, silicon nitride, alumina or similar materials (for example, heat resistant polymer based materials such as polyimide based materials or other organic materials) It is a dielectric material having a rate. The electrodes of the electrostatic chuck may each be connected to a power supply (e.g. a voltage source). The power supply may apply a predetermined voltage to the electrode to generate a predetermined electrostatic grip force.

  However, the chucking device 120 is not limited to an electrostatic chuck, and may be a magnetic chuck and / or a mechanical chuck in other embodiments.

  [0048] As schematically shown in step (a) of FIG. 1, the chucking device 120 may, for example, be a substrate which is slightly inclined downward at an angle to the vertical axis between -1 and -5. Can be configured to be held by the support surface 102.

  [0049] As schematically shown in step (b) of FIG. 1, the mask 20 may be fixed to a mask frame 25 which may be configured to hold and stabilize the mask. For example, the mask 20 may be permanently attached (e.g., welded) to the mask frame 25 at its end. In some embodiments, the mask frame 25 partially or completely surrounds the mask. For example, the mask frame 25 may be formed as a frame that encloses the mask and holds the mask at the periphery of the mask.

[0050] As schematically illustrated in step (d) of FIG. 1, the mask may be arranged in front of the substrate, ie at a close distance from the substrate, between the substrate 10 and the deposition source 150. The gravity may cause the mask frame 25 to bow downward. The curvature of the mask frame, there are cases where between gap 28 between the substrate and the mask occur, i.e., as compared to the relatively hard substrate carrier, it is between gap 28 from the deformed mask frame may occur.

[0051] It may be difficult to correct the curvature of the mask frame in the direction of gravity. The period of gap 28 between the mask and the substrate, shadows can occur deposited material pattern. More specifically, the edges of the material pattern deposited on the substrate can be negatively affected (e.g., hazy) and it is not possible to obtain sharp edges of the material pattern.

  According to embodiments described herein, using chucking device 120 to improve the quality of the deposited material pattern by partially releasing mask 20 from the substrate carrier it can. The chucking device 120 may be configured to reduce or stop the chucking force at a portion of the support surface (e.g., the outer portion of the support surface where the end region 12 of the substrate may be disposed).

  [0053] As schematically shown in step (c) of FIG. 1, the substrate is used with a chucking device 120 so that, for example, the end region 12 can be curved towards the mask 20 by gravity. The ten end regions 12 can be released from the support surface 102. At the same time, via the chucking device 120, the central area 11 of the substrate can be attracted to the support surface. However, the present disclosure is not limited thereto, and any area of the substrate can be released from the support surface during deposition to reduce the distance between the substrate and the mask in any area.

  [0054] During transport of the substrate, it may be beneficial to attract the entire substrate to the support surface while placing the mask in front of the substrate and / or removing the mask from the substrate. Thus, when the mask is placed in front of the substrate (step (b) in FIG. 1), both the edge region 12 of the substrate and the central region 11 of the substrate are supported on the support surface using the chucking device 120 It can be attracted. Contact between the mask and the substrate can be reduced or avoided during relative movement of the mask and / or the substrate. In some embodiments, after the material is deposited on the substrate before the mask and the substrate are separated, the edge region 12 of the substrate can again be attracted to the support surface 102.

  [0055] In some embodiments, which can be combined with other embodiments described herein, the edge region 12 of the substrate released from the support surface 102 has an edge width greater than or equal to 5 mm and less than or equal to 50 mm W, in particular, may have an end width of 10 mm to 20 mm. In some embodiments, the top and / or bottom of the substrate in the direction of gravity is released from the substrate carrier (see step (c) of FIG. 1). Alternatively or additionally, the left and right ends of the substrate are released from the substrate carrier. In some embodiments, the circumferential end regions of the substrate, ie, the top, bottom, left, and right ends of the substrate (eg, each having an edge width of 10 mm to 20 mm), are released from the support surface . In some embodiments, only the upper and / or lower end of the substrate (e.g., having an end width of 10 mm to 20 mm, respectively) is released from the substrate carrier.

  While the material 105 is deposited on the substrate, only a first region of the substrate (eg, central region 11) may be attracted to the support surface 102, while a second region of the substrate (eg, edge region 12). ) May not be attracted. The first region may comprise 75% or more, specifically 90% or more of the substrate surface. The end regions may comprise 25% or less, in particular 10% or less, of the substrate surface.

  [0057] In some embodiments, which can be combined with other embodiments described herein, the chucking device 120 can be operated independently of each other, the main chucking zone 122, and at least one. And two at least one end chucking zone 124. The main chucking zone 122 may be configured and arranged to attract and / or release a first area of the substrate (e.g., the central area 11) and / or at least one second chucking zone may be It may be configured and arranged to attract and / or release a second region of the substrate (e.g., the end region 12). Partially releasing the substrate 10 may include deactivating at least one second chucking zone while the activation of the main chucking zone 122 is maintained.

  [0058] In some embodiments, attracting the substrate 10 to the support surface 102) uses the electrostatic main field of the electrostatic chuck to align the central region 11 of the substrate to the support surface 102. Attracting and / or partially releasing the substrate 10 may include one or more electrostatic chucks of the electrostatic chuck to release the end region 12 of the substrate 10 from the support surface 102. Deactivating an electrostatic edge field may be included. In some embodiments, one or more electrostatic edge fields may surround the electrostatic main field. The electrostatic main field and the one or more electrostatic edge fields can operate independently of one another, ie independently of one another, to activate, deactivate, increase and / or decrease Can. Specifically, the e-chucks can each include a separate electrostatic field, and only the electrostatic edge field can be deactivated during disassembly.

[0059] By partially release the substrate 10 from the support surface, it is possible to reduce the end 22 and the period of gap 28 between the substrate end area 12 of the mask.

  [0060] In some embodiments, disposing the mask 20 in front of the substrate 10 may use a second chucking device, specifically, using a magnetic chuck, and more specifically, Attracting the mask 20 towards the substrate 10 using an electromagnetic chuck or using a chucking device comprising permanent magnets (e.g. using a magnet plate comprising one or more permanent magnets or electromagnets) . By providing the chucking device 120 to attract and release the substrate and the second chucking device 130 to attract and release the mask, the mask and the substrate can be attracted and released independently of each other. It may be easy to position the mask and / or the substrate exactly and precisely with respect to each other.

  [0061] In some embodiments, which may be combined with other embodiments described herein, the angle α between the vertical direction and the substrate 10 is between 0 ° and -20 ° during deposition. In particular, it may be between -1 ° and -10 °, more specifically between -1 ° and -5 °. Particle generation on the substrate during deposition can be reduced or avoided.

  [0062] FIG. 2 is a schematic view of a substrate carrier 200 for holding a substrate while depositing material on the substrate, according to embodiments described herein. The substrate carrier 200 is configured to process a substrate in accordance with any of the embodiments described herein and is configured to chuck the substrate 10 towards the support surface 102 of the substrate carrier 100. An apparatus 120 (eg, an electrostatic chuck) is included. The substrate carrier 200 further includes a second chucking device 130 configured to attract the mask 20 towards the support surface 102 of the substrate carrier 100.

  [0063] The second chucking device 130 may be a magnetic chuck, in particular an electromagnetic chuck that includes one or more electromagnets (ie, coils). However, the present disclosure is not limited thereto, and the second chucking device 130 may alternatively be a magnetic chuck including a permanent magnet, an electrostatic chuck, and / or a mechanical chuck.

  For example, the second chucking device 130 may be a plate that includes one or more permanent magnets, also referred to herein as a "magnet plate". The magnet plate may be provided as a separate unit which may be movable relative to the carrier body of the substrate carrier. A magnet plate may be disposed behind the carrier body of the substrate carrier. For example, the distance between the magnet plate and the mask can be adjusted on the back side of the carrier body by moving the magnet plate away from or towards the carrier body.

  The chucking device 120 is configured to partially release the substrate 10 from the support surface 102 towards the mask 20. For example, before and / or during deposition, chucking device 120 may release a portion of the substrate from the support surface. The released portion of the substrate may bend towards the mask 20, which may be located in front of the substrate, for example due to gravity. The gap 28 between the substrate and the mask may be reduced. Thus, during deposition, the shadowing effect of the mask can be reduced and deposition quality can be improved.

  [0066] In some embodiments, which may be combined with other embodiments described herein, the chucking device 120 may be an electrostatic chuck that includes one or more electrodes, and The second chucking device 130 may be an electromagnetic chuck that includes one or more electromagnets.

  The second chucking device 130 may be used to attract the mask 20 and / or the mask frame 25 towards the substrate 10 held on the support surface 102. For example, the second chucking device 130 can be used to attract the mask 20 toward the support surface 102 such that at least a portion of the mask 20 is in direct contact with the substrate 10. The shadowing effect can be reduced. After deposition, the second chucking device 130 may release the mask 20 from the substrate 10 so that the mask and the substrate can be separated from each other without negatively affecting the material pattern deposited on the substrate. .

  [0068] In some embodiments, the mask 20 comprises a magnetically attractable material (eg, metal) such that it can be attracted by the magnetic force generated by the magnetic chuck. For example, the mask 20 is a metal mask, and more specifically, a fine metal mask. In some embodiments, the mask frame 25 may also include a magnetically attractable material (eg, metal) so that the magnetic force can also attract the mask frame toward the support surface. The mask 20 may be fixed (eg, permanently fixed to the mask frame 25) to the mask frame 25 by welding. For example, the mask frame 25 may be formed as a frame that encloses the mask and holds the mask at the periphery of the mask.

  [0069] Once the chucking device 120 (eg, electrostatic chuck) and the second chucking device 130 (eg, magnetic chuck) are incorporated into the carrier body 101 of the substrate carrier 100, the complexity of the substrate carrier is reduced. , Can be easy to handle. For example, the chucking device 120 may be incorporated in the first inner space of the carrier body 101, and the second chucking device 130 may be incorporated in the second inner space of the carrier body 101. . Alternatively or additionally, the chucking device 120 and the second chucking device 130 may be the same carrier, for example by attaching both the chucking device 120 and the second chucking device 130 to the same carrier body 101. The two chucking devices can be transported and moved as a single unit.

  [0070] In another embodiment, the chucking device 120 may be disposed within the carrier body 101 of the substrate carrier, and the second chucking device 130 may be movable relative to the substrate carrier. It may be provided in the main body. For example, the magnetic chuck may be provided in a separate body that may be positioned on the back of the substrate carrier during deposition. The distance between the substrate carrier and the separate body may be adjustable to adjust the magnetic force at the position of the mask.

  [0071] Chucking device 120 may include two or more chucking zones that may operate independently of one another. For example, the first chucking zone (e.g., the main chucking zone 122) may be activated and / or not separate from the at least one second chucking zone (e.g., the at least one end chucking zone 124) It can be activated. The main chucking zone 122 may provide sufficient chucking force to attract the substrate to the support surface, for example, even when the at least one second chucking zone is deactivated. At least one second chucking zone may be deactivated to release a portion of the substrate (e.g., the edge of the substrate) from the support surface.

  [0072] In some embodiments, which may be combined with other embodiments described herein, the chucking device 120 may be configured with a main chucking zone 122 configured to generate an electrostatic main field. , And one or more end chucking zones 124 configured to generate one or more electrostatic edge fields. The main chucking zone 122 may provide sufficient electrostatic force to attract the substrate to the support surface, even when the one or more end chucking zones 124 are deactivated. One or more end chucking zones 124 can be deactivated to release the end portion of the substrate from the support surface.

  [0073] The main chucking zone 122 may be configured to attract the central region 11 of the substrate and / or may be arranged in the central portion of the carrier body 101. The one or more end chucking zones 124 may be configured to attract and release the edge area of the substrate and / or the perimeter of the carrier body 101 (e.g., the main chucking zone 122). It may be arranged in the surrounding part).

  [0074] For example, the one or more end chucking zones 124 may be a first end chucking zone configured to attract at least one of the top and bottom of the substrate, and / or A second end chucking zone configured to attract at least one of the left and right ends of the substrate may be included.

  [0075] In some embodiments, the main chucking zone 122, the first end chucking zone, and the second end chucking zone are separate chucking zones operable independently of one another is there. For example, while depositing material on the substrate, the main chucking zone 122 may remain activated, but one during deposition to release at least a portion of the substrate towards the mask. Alternatively, the plurality of end chucking zones 124 may be deactivated.

  [0076] FIG. 3 shows the substrate carrier 300 in a schematic top view. The substrate carrier 300 may include some or all of the features of any of the embodiments described herein, and reference may be made to the above description not repeated here.

  [0077] As shown in more detail in the top view of FIG. 3, one or more end chucking zones 124, eg, a first end chucking zone and a second end chucking zone May include a plurality of electrodes arranged to form a frame surrounding the main chucking zone 122. The size of the chucking device 120 may be adapted to the size of the substrate. The main chucking zone 122 may be disposed in the central portion of the carrier body 101 of the substrate carrier 300 and / or includes 50% or more, specifically 75% or more, of the surface area of the chucking device 120. obtain. The one or more end chucking zones 124 may comprise 25% or more, specifically 10% or more, of the surface of the chucking device. For example, the width W of the upper chucking zone and / or the lower chucking zone may be 5 mm or more and 50 mm or less, specifically 10 mm or more and 20 mm or less, in the vertical direction, respectively. Alternatively or additionally, the width W of the left chucking zone and / or the right chucking zone may be 5 mm or more and 50 mm or less in the lateral direction, specifically 10 mm or more and 20 mm or less, respectively. . Each chucking zone may include one or more electrodes, eg, alternately chargeable wires.

  [0078] FIG. 4 is a schematic cross-sectional view of a substrate carrier 400 according to embodiments described herein. The substrate carrier 400 may be similar to the substrate carrier 200 shown in FIG. 2 and reference may be made to the above description not repeated here. The chucking device 120 may be configured as an electrostatic chuck that includes one or more electrodes 410. One or more electrodes 410 may be configured to generate a predetermined electrostatic grip that may be adjustable. The one or more electrodes 410 may be connected to a first power source 420, for example, a high voltage source for applying a high voltage to the one or more electrodes 410.

  [0079] The electrostatic chuck may be configured as a monopolar chuck, a bipolar chuck, or a multipolar chuck. A "unipolar chuck" may be understood as an electrostatic chuck that includes one or more electrodes connectable to a power source (e.g., a high voltage source). The power supply is configured to provide a unipolar voltage to the one or more electrodes.

  [0080] As used herein, a "bipolar chuck assembly" is an electrostatic chuck that includes at least one first electrode and at least one second electrode connectable to a power source (eg, a high voltage source). You may understand. The power supply is configured to supply a voltage of a first polarity to the first electrode and a voltage of a second polarity to the second electrode. For example, a negative voltage may be applied to the first electrode, a positive voltage may be applied to the second electrode, or vice versa. Thus, electrostatic induction can generate corresponding negatively charged areas and correspondingly positively charged areas on the support surface. In some embodiments, a symmetrical bipolar voltage is provided.

  [0081] The multipole chuck assembly may be provided with a plurality of electrodes that may be independently controllable.

  [0082] Separate electrical connection lines and / or supply terminals may be provided to power the main chucking zone 122 and the one or more end chucking zones 124.

  [0083] The electrostatic chuck shown in FIG. 4 includes at least one first electrode and at least one second electrode, and a first power supply 420 (eg, a high voltage source) provides a positive voltage (+). Is applied to the first electrode, and a negative voltage (-) is applied to the second electrode. The at least one first electrode may be interleaved with the at least one second electrode to increase the gripping force provided by the electrostatic chuck. Alternatively or additionally, the first and second electrodes may be arranged alternately. For example, the electrostatic chuck can include a plurality of wires that are alternately positively and negatively charged.

  [0084] In some embodiments, the main chucking zone 122 includes electrodes that can be alternately charged, specifically, wires that can be alternately charged and / or at least one end chucking zone 124 includes electrodes that can be alternately charged, specifically, wires that can be alternately charged. The first power source 420 may be configured to power the electrodes of the main chucking zone 122 separately from the electrodes of the at least one end chucking zone 124.

  [0085] In some embodiments, the second chucking device 130 is an electromagnetic chuck that includes one or more electromagnets 412 for generating a magnetic field. A second power source 430 may be provided to power one or more electromagnets 412. Electrical connection lines 431 may be provided to connect the second power source 430 to the respective coil windings of the one or more electromagnets 412 (not shown in FIG. 4). The polarity of adjacent electromagnets directed towards the support surface may be opposite in some embodiments. Specifically, the electromagnets may be arranged such that the polarity of each adjacent electromagnet directed towards the support surface is of opposite polarity. For example, as shown in FIG. 4, the windings of adjacent electromagnets can be reversed such that an alternating arrangement of windings is provided.

  [0086] The first power supply 420 and the second power supply 430 are integrated as a single power supply having various output terminals for separately and independently powering the chucking device 120 and the second chucking device 130. It may be done.

  [0087] The chucking device 120 and the second chucking device 130 may operate independently and / or may be controlled by the control unit, the control unit timing the chucking of the mask, The timing of chucking the substrate, the timing of releasing the mask, the timing of releasing the substrate, the chucking force of the substrate, and / or the chucking force of the mask may be controlled. Furthermore, the control unit may be configured to control the timing of each of the main chucking zone 122 and the at least one end chucking zone 124 of the chucking device 120.

  [0088] In some embodiments, which can be combined with other embodiments described herein, one or more electromagnets 412 of the magnetic chuck can be disposed at a first distance from the support surface 102 . The first distance between the one or more electromagnets 412 and the support surface 102 may be 10 cm or less, specifically 5 cm or less, more specifically 2 cm or less. By making the first distance short, the magnetic force at the position of the mask can be increased.

  [0089] FIG. 5 is a schematic view of a deposition apparatus 500 for depositing material on a substrate, according to embodiments described herein. Deposition apparatus 500 is for depositing substrate carrier 100 for holding substrate 10 and material 105 on substrate 10 supported on the substrate carrier according to any of the embodiments described herein. And a configured deposition source 150 (e.g., an evaporator).

  [0090] In some embodiments, the deposition apparatus 500 further includes a mask carrier configured to convey the mask 20 such that the mask can be disposed in front of the substrate 10. In particular, the mask carrier may be configured to carry the mask frame 25 and the mask 20 fixed to the mask frame 25.

  [0091] The deposition apparatus 500 may further include a vacuum chamber 501, the deposition source 150 and the substrate carrier 100 disposed in the vacuum chamber 501. The deposition source 150 comprises a crucible containing the material to be evaporated, and at least one distribution tube for directing the evaporation material (directed towards the substrate 10 during deposition) towards the plurality of openings in the distribution tube. And an evaporator.

  [0092] The deposition source 150 may be provided on a movable support so that the deposition source 150 can pass through the substrate 10 during deposition.

  [0093] The substrate is attracted to the support surface of the substrate carrier using a chucking device 120, and the mask 20 is attracted towards the support surface using a second chucking device 130. In some embodiments, the chucking device 120 and the second chucking device 130 are integrated into the carrier body of the substrate carrier. The chucking device 120 may include multiple chucking zones configured to provide a single controllable electrostatic field.

  [0094] The second chucking device 130 may be a magnetic chuck including a plurality of chucking zones, and the at least one first chucking zone 132 is configured to attract a central portion of the mask As such, the at least one second chucking zone 134 may be configured to attract the mask frame 25 and / or the outer portion of the mask. By setting the magnetic force of the at least one second chucking zone 134 to a suitable value, the gap between the end 22 of the mask and the substrate can be reduced, this value being at least one of the first The value of the magnetic force of the chucking zone 132 may be different. For example, the mask frame 25 may be attracted by a higher magnetic force than the central portion of the mask. In particular, the at least one first chucking zone 132 and the at least one second chucking zone 134 may be controlled independently.

  [0095] FIG. 6 is a flow diagram illustrating a method of processing a substrate according to the embodiments described herein. At box 610, a substrate is attracted toward the support surface of the substrate carrier using a chucking device 120 (e.g., an electrostatic chuck integrated within the carrier body of the substrate carrier). The entire substrate can be attracted to the substrate carrier.

  [0096] For example, the substrate may be disposed on the support surface in a non-vertical orientation, and then the chucking device may be activated, eg, the substrate carrier to an essentially vertical orientation (+/- 20 °). And can be rotated.

  [0097] While the substrate is held on the support surface of the substrate carrier, the substrate carrier can be transported inside the vacuum processing system (eg, into the vacuum chamber of the deposition apparatus). For example, the substrate carrier can be moved into the deposition apparatus with the substrate, and the deposition source can be disposed in the deposition apparatus.

  At box 620, the mask 20 is placed in front of the substrate 10. The mask may be aligned relative to the substrate to establish a predetermined relative position between the substrate and the mask. For example, by performing rough alignment and then precise alignment, the positional deviation between the mask and the substrate in the vertical and / or lateral directions can each be reliably 10 μm or less, specifically Can be made to be 3 μm or less.

  [0099] In box 630, the mask 20 and / or the mask frame 25 holding the mask may be magnetic, such as an electromagnetic chuck integrated within a carrier body of a substrate carrier, using the second chucking device 130, for example. The chuck can be used to be attracted towards the support surface. For example, at least a portion of the mask can be pulled toward the substrate such that the mask is in direct contact with the substrate.

  [00100] At box 640, at least a portion of the substrate is released from the support surface, for example, by partially deactivating the chucking device 120. In some embodiments, the edge of the mask 20 is fixed to the mask frame 25 and the substrate is partially released to reduce the gap between the edge 22 of the mask and the substrate. The released part may move towards the mask, for example by gravity.

  [00101] At box 650, material can be deposited on the substrate using, for example, an evaporator. When the mask is placed in front of the substrate, a material pattern may be formed on the substrate according to the open pattern of the mask.

  [00102] After deposition, for example, a chucking device can be used to re-trigger the released portion of the substrate towards the support surface to avoid damage to the deposited material pattern.

  [00103] The mask can be released from the substrate by at least partially deactivating the second chucking device. The mask and the substrate can be separated.

  [00104] Furthermore, the substrate may be transported out of the deposition apparatus, and / or dechucked and removed from the support surface, for example by deactivating the second chucking apparatus. it can.

  [00105] The material can be deposited on a substrate, and the angle α between the vertical direction and the substrate is between 0 ° and −20 °, in particular −1 °, between depositions. Between -5 °. In particular, the substrate may be arranged to tilt downward at an angle between -1 ° and -5 ° during deposition.

  [00106] While the above description is directed to embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure may be devised without departing from the basic scope of the disclosure. The scope of the disclosure is determined by the following claims.

Claims (15)

A method of processing a substrate (10),
Attracting the substrate (10) to the support surface (102) of the substrate carrier (100) using a chucking device (120);
Placing a mask (20) in front of the substrate (10);
Partially releasing the substrate (10) from the support surface (102) towards the mask (20) such that the gap (28) between the substrate (10) and the mask (20) is reduced When,
Depositing material on the substrate (10).   The method according to claim 1, wherein partially releasing the substrate (10) from the support surface (102) comprises releasing an end region (12) of the substrate (10) from the support surface. Method.   The method according to claim 2, wherein the end area (12) has an end width (W) of 5 mm or more and 50 mm or less.   A main chucking zone (122) and at least one second chucking zone, in particular at least one end chucking zone, wherein said chucking devices (120) are operable independently of one another (124), wherein partially releasing the substrate (10) maintains the at least one second chucking zone while activation of the main chucking zone (122) is maintained. The method according to any one of claims 1 to 3, comprising deactivating.   The substrate (10) is attracted to the support surface (102) by means of an electrostatic chuck provided in a carrier body (101) of the substrate carrier (100). Method described in Section.   Attracting the substrate (10) to the support surface (102) comprises using the electrostatic main field of the electrostatic chuck to attract a central region (11) of the substrate to the support surface. And / or partially releasing the substrate (10) to release the end area (12) of the substrate (10) from the support surface (102), one of the electrostatic chucks 6. A method according to claim 5, comprising deactivating a plurality of electrostatic edge fields.   The end (22) of the mask (20) is fixed to the mask frame (25) and by partially releasing the substrate (10), the end (22) of the mask and the substrate The method according to any one of the preceding claims, wherein the gap (28) between is reduced.   Placing the mask (20) in front of the substrate (10) may be performed using a second chucking device (130), specifically using a magnetic chuck, and more specifically, The method according to any of the preceding claims, comprising attracting the mask (20) towards the substrate (10) using a chuck or using a chucking device comprising permanent magnets. .   The angle (α) between the vertical direction and the substrate (10) is between 0 ° and -20 °, in particular between -1 ° and -5 °, during deposition A method according to any one of the preceding claims. A substrate carrier (100) for holding a substrate during deposition,
A chucking device (120) configured to attract a substrate (10) towards a support surface (102) of the substrate carrier (100);
A second chucking device (130) configured to attract a mask (20) towards the support surface (102) of the substrate carrier (100);
The chucking device (120) partially releases the substrate (10) from the support surface (102) towards the mask (20) during deposition to separate the substrate (10) and the mask (10). 20) The substrate carrier (100), which is configured to reduce the gap (28) with it.   The substrate carrier according to claim 10, wherein the chucking device (120) is an electrostatic chuck and / or the second chucking device (130) is a magnetic chuck. The chucking device ( 120 ) is configured to generate a main electrostatic field and a main chucking zone (122) and at least one electrostatic edge field to be generated. The substrate carrier according to claim 10 or 11, which is an electrostatic chuck comprising an end chucking zone (124).   14. The main chucking zone (122) and the at least one end chucking zone (124) each comprise an alternately chargeable electrode, in particular an alternately chargeable wire. Substrate carrier as described.   The main chucking zone (122) is configured to attract the central region (11) of the substrate, and the first end chucking zone attracts at least one of the top and bottom ends of the substrate 14. A method according to claim 12, wherein the second end chucking zone is configured to attract at least one of the left edge and the right edge of the substrate. Substrate carrier. A deposition apparatus (500) for depositing material on a substrate,
A substrate carrier (100) for holding a substrate (10) during deposition according to any one of claims 10 to 14,
A deposition source (150) configured to deposit material (105) on the substrate (10) held by the substrate carrier.

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