JP6535573B2 - Film for semiconductor manufacturing process - Google Patents

Description

  The present invention is an invention of an adhesive tape suitable for use in a semiconductor manufacturing process and a film used as a substrate of the adhesive tape.

  In the semiconductor manufacturing process, first, a semiconductor wafer of silicon, gallium arsenide, etc. is manufactured in a large diameter state, and this wafer is cut and separated (chipped) into small pieces (chips) and then carried out in the mounting process which is the next process. Be transferred. Under the present circumstances, a semiconductor wafer is provided to each process of dicing, washing | cleaning, drying, expanding, a pick-up, and mounting in the state affixed on the adhesive sheet (dicing sheet) previously.

In the dicing step, the wafer is cut by a rotating circular blade that moves while rotating. In this case, a cutting method called full cut in which the inside of the adhesive sheet of the dicing sheet holding the semiconductor wafer is cut becomes the mainstream It is coming. The pressure-sensitive adhesive sheet is formed by applying a pressure-sensitive adhesive on a substrate, and a substrate made of a relatively soft resin in consideration of expandability is conventionally used as the substrate.
In addition, in the pickup process, the chips are picked up after the individual chips are recognized and aligned by the CCD camera, but if the transparency of the base film is low, the CCD camera can not recognize them and causes a recognition error. The substrate film is required to be transparent because there is also the problem of:
Furthermore, although the adhesive may be cured by ultraviolet light in order to make it easy for the chip to peel off from the adhesive, the substrate is also required to be transparent because ultraviolet light needs to be transmitted through the substrate.

  For example, Patent Document 1 discloses a sheet for dicing pressure-sensitive adhesive prepared by blending polypropylene and polyethylene, and an olefin-based thermoplastic elastomer, and it is described that the sheet has excellent productivity. Since the polyethylene resin has crystallinity, it has poor restorability and may cause problems in the process after expansion. In addition, since polypropylene, polyethylene and an olefin-based thermoplastic elastomer are not compatible with each other, there is a problem that the transparency is poor and it can not be suitably used in applications requiring transparency as described above.

JP 2003-257893

  An object of the present invention is to provide a film for a semiconductor manufacturing process which is excellent in flexibility, cuttability and transparency and does not cause a problem in a process of dicing a semiconductor wafer.

  MEANS TO SOLVE THE PROBLEM As a result of earnestly examining in view of the said subject, the present inventors discover that the said subject can be solved if it makes a film contain a specific copolymer as a main component, and came to complete this invention.

That is, the present invention
[1] The content of the cyclic olefin component containing ethylene / cyclic olefin copolymer (A) as a main component in the ethylene / cyclic olefin copolymer (A) is 1% by mass or more and 50% by mass or less (wherein And a total of 100 parts by mass of the ethylene component and the cyclic olefin component).
[2] An ethylene / cyclic olefin copolymer containing a combination of the ethylene / cyclic olefin copolymer (A) and the polyolefin resin (B) as a main component, based on the total mass of (A) and (B) 99 to 50 mass% of (A) and 1 to 50 mass% of a polyolefin resin (B), the film for the semiconductor manufacturing process according to [1], characterized in that
[3] The semiconductor according to [2], wherein the polyolefin resin (B) is an ethylene homopolymer, a copolymer of ethylene and an α-olefin, or a mixture thereof. Film for manufacturing process.
[4] An ethylene / cyclic olefin copolymer containing the combination of the ethylene / cyclic olefin copolymer (A) and the styrenic elastomer (C) as a main component, based on the total mass of (A) and (C) 99 to 70 mass% of (A), and 1 to 30 mass% of a styrene-based elastomer (C), the film for a semiconductor manufacturing process according to [1], characterized in that
[5] A film for a semiconductor manufacturing process, wherein an adhesive layer is provided on at least one side of the film according to any one of [1] to [4].
About.

  According to the present invention, it is possible to provide a film for a semiconductor manufacturing process which is excellent in expandability, transparency and restorability and has preferable performance in a dicing step of a semiconductor wafer, particularly in the expanding step.

  Hereinafter, the present invention will be described in detail, but the present invention is not limited to the embodiments described below.

  One embodiment of the present invention is a film for a semiconductor manufacturing process which contains ethylene / cyclic olefin copolymer (A) as a main component.

[Ethylene / Cyclic Olefin Copolymer (A)]
The ethylene / cyclic olefin copolymer (A) used in the present invention is a copolymer of an ethylene component and a cyclic olefin component. Moreover, an ethylene / cyclic olefin copolymer (A) may be used individually by 1 type, and may be used combining 2 or more types.

The ethylene component constituting the ethylene / cyclic olefin copolymer (A) may be composed of ethylene alone, or may be composed of a combination of ethylene and another monomer component. As a combination of ethylene and another monomer component, a combination of ethylene and an α-olefin is preferable. Specific examples of the combination of ethylene and α-olefin are ethylene / butene-1, ethylene / hexene-1, ethylene / octene-1, ethylene / butene-1 / hexene-1, ethylene / butene-1 / octene-1 Ethylene / hexene-1 / octene-1, ethylene / butene-1 / hexene-1 / octene-1 and the like.
The ethylene / cyclic olefin copolymer (A) may be a random copolymer, a block copolymer or a graft copolymer. In the case of a block copolymer or a graft copolymer, it is preferably composed of a polymer (or copolymer) block consisting of an ethylene component and a polymer block consisting of a cyclic olefin component.

  The content of the cyclic olefin component in the ethylene / cyclic olefin copolymer (A) is 1% by mass or more and 50% by mass or less, preferably 2% by mass or more and 40% by mass or less, and 3% by mass The content is more preferably 30% by mass or less, still more preferably 5% by mass or more and 20% by mass or less (however, the total of the ethylene component and the cyclic olefin component is 100% by mass). If the content of the cyclic olefin component in the ethylene / cyclic olefin copolymer resin (A) is in this range, it is possible to obtain a film for a semiconductor manufacturing process which is excellent in flexibility, transparency, and recovery.

  Examples of the cyclic olefin component constituting the ethylene / cyclic olefin copolymer (A) include bicyclohept-2-ene (2-norbornene) and derivatives thereof such as norbornene, 6-methyl norbornene, 6-ethyl norbornene, 6-n -Butyl norbornene, 5-propyl norbornene, 1-methyl norbornene, 7-methyl norbornene, 5,6-dimethyl norbornene, 5-phenyl norbornene, 5- benzyl norbornene etc. can be mentioned. In addition, tetracyclo-3-dodecene and derivatives thereof, for example, 8-methyltetracyclo-3-dodecene, 8-ethyltetracyclo-3-dodecene, 8-hexyltetracyclo-3-dodecene, 10-dimethyltetracyclo-3 -Dodecene, 5,10-dimethyltetracyclo-3-dodecene can be mentioned. Among these, norbornene is preferably used as the cyclic olefin component because it is excellent in transparency, mechanical properties, and moldability.

  The elastic modulus of the ethylene / cyclic olefin copolymer (A) is preferably 10 MPa or more and 500 MPa or less, more preferably 30 MPa or more and 450 MPa or less, and 50 MPa or more and 400 MPa or less Is more preferred. If the tensile elastic modulus is in such a range, the film for a semiconductor manufacturing process is excellent in flexibility, processability and expandability.

[Polyolefin resin (B)]
It is preferable that the film for semiconductor manufacturing processes of this invention further contains polyolefin resin (B) other than ethylene / cyclic olefin copolymer (A). By further including the polyolefin resin (B), the elastic modulus can be improved, and a film for a semiconductor manufacturing process excellent in processability and expandability can be obtained while maintaining the transparency.

  The type of polyolefin resin (B) is not particularly limited, and may be ethylene resin or propylene resin, but when blended with ethylene / cyclic olefin copolymer (A) It is preferable to use an ethylene-based resin in that physical properties such as mechanical properties and transparency can be further preferred.

  The ethylene-based resin may be an ethylene homopolymer, a copolymer of ethylene and an α-olefin, or a mixture of these. Specific examples of the ethylene / α-olefin copolymer include ethylene / butene-1 copolymer, ethylene / hexene-1 copolymer, ethylene / octene-1 copolymer, ethylene / butene-1 / hexene-1 Copolymers, ethylene / butene-1 / octene-1 copolymer, ethylene / hexene-1 / octene-1 copolymer, ethylene / butene-1 / hexene-1 / octene-1 copolymer, etc. may be mentioned. .

  When a copolymer of ethylene and an α-olefin is used, the content of the α-olefin component in the polyolefin resin (B) is preferably 0.1% by mass or more and 20% by mass or less, and 0. It is more preferably 3% by mass or more and 15% by mass or less and still more preferably 0.5% by mass or more and 10% by mass or less (however, the total of ethylene and the α-olefin component is 100% by mass) ). If the ratio of the α-olefin component is within such a range, it is possible to obtain a film for a semiconductor manufacturing process excellent in processability, expandability, and recovery when mixed with the ethylene / cyclic olefin copolymer (A). it can.

Another embodiment of the present invention is a film for a semiconductor manufacturing process which contains, as a main component, a combination of an ethylene / cyclic olefin copolymer (A) and a polyolefin resin (B).
The film for semiconductor manufacturing process of the present invention may be made of ethylene / cyclic olefin copolymer (A) alone, but by further including a polyolefin resin (B), the processability and the expandability are further improved. Can.

  As content of ethylene / cyclic olefin copolymer (A) and polyolefin resin (B), it is ethylene / cyclic olefin copolymer (A) 99-50 with respect to the total mass of (A) and (B). The mass% and the polyethylene resin (B) 1 to 50 mass% are preferable. That is, it is preferable that (A) :( B) = 99: 1 to 50:50 (mass ratio), and (A) :( B) = 97: 3 to 55:45 (mass ratio) (A): (B) = 95: 5 to 60: 40 (mass ratio) is more preferable, and 90: 10 to 60: 40 (mass ratio) is particularly preferable. If the mass ratio of the ethylene / cyclic olefin copolymer (A) and the polyolefin resin (B) falls within the above range, a film for a semiconductor manufacturing process which is more excellent in processability and expandability without impairing the transparency and the restorability. You can get

[Styrene-based elastomer (C)]
It is preferable that the film for a semiconductor manufacturing process of the present invention further includes a styrene-based elastomer (C) in addition to the ethylene / cyclic olefin copolymer (A). By further including the styrenic elastomer (C), the elastic modulus can be improved, and a film for a semiconductor manufacturing process excellent in processability can be obtained while maintaining the transparency.

  The type of styrenic elastomer (C) is an elastomer composed of a hard segment consisting of polystyrene and a soft segment consisting of polybutadiene, polyisoprene, polyisobutylene or their hydrogenated products, and / or their copolymers. There is no particular limitation as long as it is a styrene-butadiene copolymer (SB), a styrene-butadiene-styrene copolymer (SBS), a styrene-isoprene copolymer (SI), a styrene-isoprene-styrene copolymer (SIS), styrene-isobutylene copolymer (SIB), styrene-isobutylene-styrene copolymer (SIBS), styrene-butadiene-butylene-styrene copolymer (SBBS), styrene-ethylene-butylene-styrene copolymer (SEBS), steel - ethylene - propylene - styrene copolymer (SEPS), styrene - ethylene - ethylene - propylene - styrene (SEEPS) copolymers. One of these may be used alone, or two or more of these may be used in combination.

  The styrene content of the styrene-based elastomer (C) is preferably 20% by mass or more and 80% by mass or less, more preferably 30% by mass or more and 75% by mass or less, and 40% by mass or more and 70% by mass % Or less is more preferable (however, the total of all components of the styrenic elastomer is 100% by mass). If the styrene content of the styrene-based elastomer (C) is in such a range, the processability can be improved while maintaining the restorability and the transparency.

Another embodiment of the present invention is a film for a semiconductor manufacturing process which comprises a combination of an ethylene / cyclic olefin copolymer (A) and a styrenic elastomer (C) as a main component.
The film for the semiconductor production process of the present invention may be made of an ethylene / cyclic olefin copolymer (A) alone, but the processability can be further improved by further including a styrene-based elastomer (C).

  As content of ethylene / cyclic olefin copolymer (A) and a styrene-type elastomer (C), ethylene / cyclic olefin copolymer (A) 99-70 is with respect to the total mass of (A) and (B). % By mass and 1 to 30% by mass of the styrenic elastomer (C) are preferable. That is, it is preferable that (A) :( B) = 99: 1 to 70:30 (mass ratio), and (A) :( B) = 97: 3 to 73:27 (mass ratio) (A): (B) = 95: 5 to 75: 25 (mass ratio) is more preferable, and 93: 7 to 77: 23 (mass ratio) is particularly preferable. If the mass ratio of the ethylene / cyclic olefin copolymer (A) and the styrene-based elastomer (C) falls within the above range, a film for a semiconductor manufacturing process which is more excellent in processability and expandability without impairing the transparency and the restorability. You can get

[Film for semiconductor manufacturing process]
The film for a semiconductor production process of the present invention is mainly composed of the ethylene / cyclic olefin copolymer (A) alone or a combination of the ethylene / cyclic olefin copolymer (A) and the polyolefin resin (B). Or containing a combination of the ethylene / cyclic olefin copolymer (A) and the styrenic elastomer (C) as a main component, which is excellent in flexibility, processability, expandability, transparency and recovery, In particular, it is a film for a semiconductor manufacturing process having preferable performance in a wafer dicing process, particularly an expanding process. In the present invention, the term "main component" means that the mass ratio is 50 mass% or more, preferably 60 mass% or more, more preferably 70 mass% or more, and still more preferably 80 mass%. It is the above, especially preferably 90 mass% or more, and especially preferably 100 mass%.

  The film for semiconductor manufacturing process preferably has a tensile modulus of 10 MPa or more and 500 MPa or less, more preferably 30 MPa or more and 450 MPa or less, and still more preferably 50 MPa or more and 400 MPa or less. If the tensile elastic modulus is in such a range, the film for a semiconductor manufacturing process is excellent in flexibility, processability and expandability.

  The film for semiconductor manufacturing process preferably has a tensile yield elongation of 30% or more, more preferably 50% or more, still more preferably 100% or more, and it is particularly preferable that a yield point does not exist. preferable. In the wafer dicing process, the base film is generally stretched by 30 to 50%. However, if the tensile yield elongation is less than 30%, the base film is broken during stretching, and the restorability after that hardly occurs. If the tensile yield elongation is in the range, the film for the semiconductor manufacturing process can exhibit sufficient recoverability.

In addition, the restorability said by this invention is an index showing how much it returned to original length after expanding the said film for semiconductor manufacturing processes, and is evaluated by the restoration rate represented by the following formula | equation .
Recovery rate (%) = (length immediately after tension-length after recovery) / (length immediately after tension-length before tension) x 100

  The recovery ratio of the film for semiconductor manufacturing process is preferably 70% or more, more preferably 75% or more, and still more preferably 80% or more. If the recovery rate is in such a range, problems can be suppressed even in the process after expansion.

  The film for the semiconductor manufacturing process preferably has a total light transmittance of 80% or more, more preferably 82% or more, and still more preferably 85% or more. If the total light transmittance of the film for the semiconductor manufacturing process is in such a range, not only the visibility with a CCD camera at the time of pickup can be sufficiently secured, but the ultraviolet curing of the pressure sensitive adhesive does not occur.

The film for a semiconductor manufacturing process preferably has a haze of 15% or less, more preferably 10% or less, still more preferably 6.5% or less, calculated by the following formula: It is particularly preferred that If the haze of the film for the semiconductor manufacturing process is applied, not only the visibility with a CCD camera at the time of pickup can be sufficiently secured, but also the ultraviolet curing of the adhesive will not be hindered.
[Haze] = [diffuse transmittance] / [total light transmittance] × 100

  The film for the semiconductor manufacturing process may be, if necessary, other synthetic resin other than the above, an antioxidant, an ultraviolet absorber, a light stabilizer, a slip agent (sliding agent), an antiblocking agent, a pigment, a colorant, a filler Additives, such as nucleating agents and flame retardants, which are usually added to films made of polyolefin resins, can be added as long as the object of the present invention is not impaired. The film for semiconductor manufacturing process may be a single layer or a multilayer, and the additive may be blended in each layer.

  In the case of using an ultraviolet-curable acrylic adhesive as the adhesive in the pressure-sensitive adhesive tape using the film for the semiconductor manufacturing process, the base film is preferably of an ultraviolet transmission type, and the addition of an ultraviolet absorber is usually avoided Is preferred.

  The film for the semiconductor manufacturing process can be manufactured by a general polyolefin resin film forming method such as T-die extrusion molding method, inflation molding method and calendar molding method, and in the case of multilayer, it was manufactured by the above method It can be manufactured by laminating individual layers (films) using a laminator, or by compression lamination simultaneously with film forming, but manufacturing laminated films simultaneously with forming by multilayer T-die extrusion also reduces the number of processes. Especially preferred.

  The thickness of the film for semiconductor manufacturing process is 10 μm or more and 500 μm or less, preferably 20 μm or more and 400 μm or less, more preferably 30 μm or more and 300 μm or less, and 50 μm or more and 200 μm or less More preferable. If it is a range which takes film thickness, the film for the above-mentioned semiconductor manufacturing processes which is excellent in pliability, processability, expandability, transparency, and restorability will be obtained.

  When the substrate film is a multilayer, the thickness of each layer is not particularly limited. For example, when the substrate film has at least three layers of (A) layer / (B) layer / (C) layer, The thickness ratio is not particularly limited, but the thickness of layer (A): thickness of layer (B): thickness of layer (C): 1: 1: 1 to 1: 10: 1. Preferably there. The composition of each layer may be the same or different.

An adhesive tape is obtained by providing an adhesive layer on at least one side of the film for semiconductor manufacturing process. The pressure-sensitive adhesive layer preferably contains 50 to 100% by weight of a pressure-sensitive adhesive. As the pressure-sensitive adhesive, an acrylic pressure-sensitive adhesive is preferable. As the acrylic pressure-sensitive adhesive, a widely known acrylic resin for pressure-sensitive adhesive can be used. For example, a polymer of alkyl (meth) acrylate, a copolymer with a copolymerizable monomer, or a mixture thereof is used. Furthermore, monomers such as acrylic acid, methacrylic acid, acrylonitrile or vinyl acetate may be copolymerized for the purpose of controlling the adhesion and cohesion of the acrylic pressure-sensitive adhesive. The weight average molecular weight of the acrylic (co) polymer obtained by polymerizing these monomers is preferably 5 × 10 ⁴ to 2 × 10 ⁶ and 4 × 10 ⁵ to 8 × 10 ⁵ Is more preferred.

  Furthermore, by blending a crosslinking agent in the pressure-sensitive adhesive layer, the adhesive strength and the cohesive strength can be set to arbitrary values. As such a crosslinking agent, there are a polyvalent isocyanate compound, a polyvalent epoxy compound, a polyvalent aziridine compound, a chelate compound and the like. Specific examples of the polyvalent isocyanate compound include toluylene diisocyanate, diphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate and adducts thereof. Specifically, ethylene glycol diglycidyl ether and terephthalic acid diglycidyl ester acrylate are used as the polyvalent epoxy compound. Specific examples of the polyvalent aziridine compound include tris-2,4,6- (1-aziridinyl) -1,3,5-triazine, tris [1- (2-methyl) -aziridinyl] phosphine oxide, hexa [ 1- (2-Methyl) -aziridinyl! Triphosphatriazine etc. are used. Specific examples of the chelate compound include ethyl acetoacetate aluminum diisopropylate and aluminum tris (ethyl acetoacetate).

  Further, by blending a photopolymerizable compound into the pressure-sensitive adhesive layer, the adhesive layer is irradiated with a light beam, preferably ultraviolet light, to greatly reduce the initial adhesive strength, and easily from the adherend. The adhesive film can be peeled off. Such a photopolymerizable compound may be, for example, an intramolecularly photopolymerizable compound which can be three-dimensional networked by light irradiation as disclosed in, for example, JP-A-60-196956 and JP-A-60-223139. Low molecular weight compounds having at least two carbon-carbon double bonds are widely used. Specifically, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxy pentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene glycol diacrylate, 1,6-hexanediol Diacrylate, polyethylene glycol diacrylate, and commercially available oligoester acrylate are used. In addition, the polymerization curing time and the light irradiation amount by light irradiation can be reduced by mixing a photopolymerization initiator in the above-mentioned adhesive layer. Specific examples of such a photopolymerization initiator include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, dibenzyl, diacetyl and the like. β-chloroanthraquinone and the like can be mentioned. The photopolymerization initiator is usually used in an amount of 0.1 to 10 parts by weight with respect to 100 parts by weight of the photopolymerizable compound.

  The thickness of the pressure-sensitive adhesive layer is usually 1 to 50 μm. By setting the thickness of the pressure-sensitive adhesive layer in such a range, the balance between the adhesive strength and the cost is excellent.

  The pressure-sensitive adhesive layer is formed by dissolving a pressure-sensitive adhesive in a solvent in which a component such as a resin is soluble on a substrate film, and then gravure coating, reverse roll coating, comma coating, bar coating, knife coating A method may be used in which a substrate film is applied by a conventionally known coating method such as kiss coating method, and the solvent is evaporated and dried.

  At least one side of the film for semiconductor process may be surface-treated by methods such as plasma treatment, corona treatment, ozone treatment, and flame treatment. Moreover, you may provide a primer layer as needed between a base film and an adhesive layer. In addition, as long as the purpose of the present invention is not impaired, a resin layer may be further provided on the side opposite to the side on which the pressure-sensitive adhesive layer is provided and / or between the substrate film and the pressure-sensitive adhesive layer.

  Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited to the following examples.

[Evaluation method]
(1) Recovery ratio Based on JIS K 7127, a test piece (No. 1 dumbbell) collected from the obtained film was made into an autograph (tensile speed: 50 mm / min) manufactured by Shimadzu Corporation under an atmosphere of 23 ° C. and 60% RH. After stretching for 50% and holding for 1 minute, the sample was removed from the tester and allowed to stand for 5 minutes for restoration, and the restoration rate was measured according to the following formula.
Recovery rate (%) = (length immediately after tension-length after recovery) / (length immediately after tension-length before tension) x 100
Here, the length immediately after tension refers to the length stretched 50% by Shimadzu autograph.

(2) Tensile modulus Based on JIS K 7127, a test piece (No. 1 dumbbell) collected from the obtained film was subjected to Shimadzu autograph (tensile speed: 50 mm / min) in an atmosphere of 23 ° C. and 60% RH. The tensile modulus of elasticity was measured using

(3) Tensile yield elongation Based on JIS K7127, a test piece (No. 1 dumbbell) collected from the obtained film was subjected to Shimadzu autograph (tensile speed: 50 mm / min) under an atmosphere of 23 ° C. and 60% RH. ) Was used to measure the tensile yield elongation.

(4) Total light transmittance The total light transmittance at a wavelength of 555 nm of the obtained film was measured based on JIS K7105.

(5) Haze The total light transmittance and the diffusion transmittance of the obtained film were measured based on JIS K7105, and the haze was calculated by the following equation.
[Haze] = [diffuse transmittance] / [total light transmittance] × 100

  The materials used in this example are as follows.

[Ethylene / Cyclic Olefin Copolymer (A)]
(A) -1: TOPAS E-140 (manufactured by Polyplastics Co., Ltd., ethylene / norbornene copolymer (ethylene: norbornene = 81: 19 (mass ratio)))
(A) -2: TOPAS 8007F-04 (manufactured by Polyplastics Co., Ltd., ethylene / norbornene copolymer (ethylene: norbornene = 35: 65 (mass ratio)))
(A) -3: TOPAS 9906D-10 (manufactured by Polyplastics Co., Ltd., ethylene / norbornene copolymer (ethylene: norbornene = 51: 49 (mass ratio)))

[Ethylene-based resin (B)]
(B) -1: Novatec LD LF240 (manufactured by Japan Polyethylene Corporation, low density polyethylene (ethylene = 100% by mass))
(B) -2: Creolex K 4750 (manufactured by Asahi Kasei Co., Ltd., high density polyethylene (ethylene: butene-1: octene-1 = 97.9: 0.8: 1.3 mass ratio)
(B) -3: Sumikasen L 705 (Sumitomo Chemical Co., Ltd. product, linear low density polyethylene (ethylene: butene-1 = 93: 7 mass ratio))
(C) -1: Tuftec H1051 (manufactured by Asahi Kasei Co., Ltd., styrene-based elastomer, styrene: ethylene: 1-butene = 42: 37: 21 mass ratio)
(C) -2: Tuftec H1043 (manufactured by Asahi Kasei Co., Ltd., styrene-based elastomer, styrene: ethylene: 1-butene = 65: 19: 16 mass ratio)
(D): Zerus 5053 (Mitsubishi Chemical Co., Ltd. product, polypropylene-based elastomer, propylene: ethylene = 79: 21 mass ratio)

Example 1
(A) -1 was kneaded at 200 ° C. using a 40 mmφ co-directional twin screw extruder, extruded from a T die, and then quenched by a casting roll of about 30 ° C. to produce a 80 μm thick sheet. The resulting sheet was evaluated for recovery factor, tensile modulus, tensile yield elongation, total light transmittance and haze. The results are shown in Table 1.

Example 2
Production of a film by the same procedure as Example 1, except that dry blending of (A) -1 and (B) -1 was performed at a mixing mass ratio of 80:20 (mass ratio) as a raw material, and I made an evaluation. The results are shown in Table 1.

[Example 3]
Production of a film by the same procedure as Example 1, except that dry blending of (A) -1 and (B) -1 was performed at a mixing mass ratio of 60:40 (mass ratio) as a raw material, and I made an evaluation. The results are shown in Table 1.

Example 4
Production of a film by the same procedure as Example 1, except that dry blending of (A) -1 and (B) -2 was performed at a mixing mass ratio of 80:20 (mass ratio) as a raw material, and I made an evaluation. The results are shown in Table 1.

[Example 5]
Production of a film by the same procedure as Example 1, except that dry blending of (A) -1 and (A) -3 was performed at a mixing mass ratio of 90:10 (mass ratio) as a raw material, and I made an evaluation. The results are shown in Table 1.

[Example 6]
Production of a film by the same procedure as in Example 1 except that dry blending of (A) -1 and (A) -3 was performed at a mixing mass ratio of 80:20 (mass ratio) as a raw material, and I made an evaluation. The results are shown in Table 1.

[Example 7]
Production of a film by the same procedure as in Example 1, except that dry blending of (A) -1 and (C) -1 was performed at a mixing mass ratio of 90:10 (mass ratio) as a raw material, and I made an evaluation. The results are shown in Table 1.

[Example 8]
Production of a film by the same procedure as Example 1, except that dry blending of (A) -1 and (C) -1 was performed at a mixing mass ratio of 80:20 (mass ratio) as a raw material, and I made an evaluation. The results are shown in Table 1.

[Example 9]
Production of a film by the same procedure as Example 1, except that dry blending of (A) -1 and (C) -2 was performed at a mixing mass ratio of 90:10 (mass ratio) as a raw material, and I made an evaluation. The results are shown in Table 1.

[Example 10]
Production of a film by the same procedure as Example 1, except that dry blending of (A) -1 and (C) -2 was performed at a mixing mass ratio of 80:20 (mass ratio) as a raw material, and I made an evaluation. The results are shown in Table 1.

Comparative Example 1
A film was produced and evaluated in the same manner as in Example 1 except that (A) -2 was used as a raw material. The results are shown in Table 1.

Comparative Example 2
Production of a film by the same procedure as Example 1, except that dry blending of (A) -2 and (B) -3 was performed at a mixing mass ratio of 80:20 (mass ratio) as a raw material, and I made an evaluation. The results are shown in Table 1.

Comparative Example 3
Production of a film by the same procedure as Example 1, except that dry blending of (A) -2 and (B) -3 was performed at a mixing mass ratio of 60:40 (mass ratio) as a raw material, and I made an evaluation. The results are shown in Table 1.

Comparative Example 4
Production of a film by the same procedure as Example 1, except that dry blending of (A) -2 and (B) -3 was performed at a mixing mass ratio of 30:70 (mass ratio) as a raw material, and I made an evaluation. The results are shown in Table 1.

[Reference Example 1]
A film was produced and evaluated in the same manner as in Example 1 except that (D) was used as a raw material. The results are shown in Table 1.

  From Table 1, it can be seen that Examples 1 to 10 are excellent in restorability, transparency and the like, and have preferable performance also in the expanding step. On the other hand, in Comparative Examples 1 to 4, the restoration rate was poor. Therefore, it is understood that the film for semiconductor process of the present invention is excellent in flexibility and cuttability, and in particular, has excellent performance in the expanding step, and can be suitably used.

Claims (4)

The content of the cyclic olefin component in the ethylene / cyclic olefin copolymer (A) is at least 1 mass%, containing the combination of the ethylene / cyclic olefin copolymer (A) and the polyolefin resin (B) as a main component, 50 wt% or less (provided that the sum of ethylene component and a cyclic olefin component as 100 mass%.) der is, based on the total weight of (a) and (B), the ethylene / cyclic olefin copolymer (a 99 to 50% by mass) and 1 to 50% by mass of the polyolefin resin (B),
A film for a semiconductor manufacturing process, characterized in that the recovery rate of the film is 70% or more . The process for producing a semiconductor according to claim 1 , wherein the polyolefin resin (B) is an ethylene homopolymer, a copolymer of ethylene and an α-olefin, or a mixture thereof. the film. Wherein d styrene / cyclic olefin copolymer combinations (A) and the styrene elastomer (C) as the main component, the content of the cyclic olefin component occupied in the ethylene / cyclic olefin copolymer (A) is more than 1 wt% And 50% by mass or less (provided that the total of the ethylene component and the cyclic olefin component is 100% by mass), with respect to the total mass of (A) and (C), the ethylene / cyclic olefin copolymer (A) ) and 97 to 73 wt%, the styrene elastomer (C) contains 3-27 wt%,
Wherein the restoration of the film is 70% or more, the film for semi-conductor manufacturing process. The film for semiconductor manufacturing processes by which an adhesive layer is provided in the at least single side | surface side of the film of any one of Claims 1-3 .