JP6547653B2 - Coil parts - Google Patents

Description

  The present invention relates to a coil component, and more particularly to a coil component in which four spiral conductors are stacked.

  A common common mode filter has a configuration in which two spiral conductors are stacked on a magnetic substrate, whereby the two spiral conductors are magnetically coupled to each other. However, when there are two spiral conductors, it becomes difficult to secure a sufficient conductor width while increasing the number of turns. As a method of solving such a problem, four spiral conductors are laminated, two of them are short-circuited to form a first coil, and the remaining two are short-circuited to form a second coil. (See Patent Documents 1 and 2).

JP, 2015-5628, A JP 2007-200923 A

  However, when four spiral conductors are stacked, the number of turns of the upper layer spiral conductor and the number of turns of the lower layer spiral conductor may differ depending on the number of turns required for each shorted coil. In this case, the characteristic impedances of the spiral conductor having a large number of turns and the spiral conductor having a small number of turns may be different, which may deteriorate the signal transmission characteristics.

  Therefore, an object of the present invention is to provide a coil component capable of obtaining high transmission characteristics by improving the characteristic impedance even if there is a difference in the number of turns between the spiral conductors.

  The coil component according to the present invention comprises first, second, third and fourth spiral conductors stacked one on another through a plurality of insulating layers, wherein the plurality of insulating layers are the first spiral conductor and A first insulating layer provided between the second spiral conductor and a second insulating layer provided between the third spiral conductor and the fourth spiral conductor; The first spiral conductor and the third spiral conductor are short-circuited to form a first coil, and the second spiral conductor and the fourth spiral conductor are short-circuited to form a second coil. The number of turns of the first spiral conductor and the number of turns of the second spiral conductor are equal to each other, the number of turns of the third spiral conductor and the number of turns of the fourth spiral conductor are equal to each other, and the number of turns of the first and second spiral conductors Before More than the number of turns of the third and fourth spiral conductor, the first insulating layer of thickness, characterized in that thinner than the thickness of the second insulating layer.

  According to the present invention, the relatively thin first insulating layer is provided between the first and second spiral conductors having a relatively large number of turns, and the third and fourth relatively small numbers of turns are provided. Since the relatively thick second insulating layer is provided between the spiral conductors, the difference in characteristic impedance between the spiral conductors is reduced. This makes it possible to obtain higher transmission characteristics than in the past.

  In the present invention, the conductor widths of the first spiral conductor and the second spiral conductor are equal to each other, and the conductor widths of the third spiral conductor and the fourth spiral conductor are equal to each other. The conductor width of the spiral conductor is preferably thicker than the conductor widths of the first and second spiral conductors. According to this, it is possible to further reduce the direct current resistance.

  In the present invention, it is preferable that the first, second, third and fourth spiral conductors are stacked in this order on a magnetic substrate. According to this, since the first and second spiral conductors are arranged at the lower layer position with higher flatness, it becomes possible to easily form the first and second spiral conductors with many turns. .

  In the present invention, the difference between the number of turns of the first and second spiral conductors and the number of turns of the third and fourth spiral conductors is preferably an odd number. In this case, it is difficult to match the number of turns of each spiral conductor, but even in such a case, it is possible to secure high transmission characteristics.

  In the present invention, each of the first, second, third and fourth spiral conductors is located on the inner peripheral side of a predetermined turn having a predetermined conductor width and the predetermined turn, and the conductor width is the predetermined width. It is preferable that an inner turn smaller than the conductor width and an outer turn wider than the predetermined conductor width and located on the outer peripheral side than the predetermined turn. In particular, it is preferable that the plurality of turns constituting each of the first, second, third and fourth spiral conductors have a conductor width that is increased continuously or stepwise from the inner peripheral side toward the outer peripheral side. According to this, since the variation in the characteristic impedance in the same spiral conductor is also reduced, it is possible to obtain higher transmission characteristics.

  According to the present invention, even when there is a difference in the number of turns between the spiral conductors, the difference in the characteristic impedance is reduced, so that it is possible to obtain higher transmission characteristics.

FIG. 1 is a schematic perspective view showing the appearance of a coil component 10 according to a preferred embodiment of the present invention. FIG. 2 is a view for explaining the structure of the laminated structure 20. As shown in FIG. FIG. 3 is an equivalent circuit diagram of the coil component 10. FIG. 4 is a partial cross-sectional view of the stacked structure 20 in the stacking direction. FIG. 5 is a process diagram for explaining a method of forming the laminated structure 20. As shown in FIG. FIG. 6 is a process diagram for explaining a method of forming the laminated structure 20. As shown in FIG. FIG. 7 is a partial plan view showing a part of a first spiral conductor 41 according to a modification.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

  FIG. 1 is a schematic perspective view showing the appearance of a coil component 10 according to a preferred embodiment of the present invention, which is vertically inverted with respect to the mounting state.

  As shown in FIG. 1, the coil component 10 according to this embodiment is a surface mount type common mode filter having a substantially rectangular parallelepiped shape, and includes a magnetic substrate 11 and a laminated structure 20 provided on the magnetic substrate 11; The first to fourth terminal electrodes E1 to E4 provided on the laminated structure 20 and the magnetic resin layer 12 are provided. The specific configuration of the laminated structure 20 will be described later. Although the size of the coil component 10 is not particularly limited, the length in the x direction is 0.65 mm, the width in the y direction is 0.5 mm, and the height in the z direction is 0.3 mm. At the time of mounting, it is mounted upside down from the state shown in FIG. 1 so that the xy plane provided with the first to fourth terminal electrodes E1 to E4 faces the printed circuit board. The coil component 10 according to the present embodiment is a laminated type thin film coil component in which the laminated structure 20 is laminated on the magnetic substrate 11, and a so-called winding type coil component formed by winding a wire around a magnetic core or bobbin. Are of different types.

  The magnetic substrate 11 is a substrate at the time of laminating the laminated structure 20, and physically protects the laminated structure 20 and constitutes a magnetic path of the coil component 10. As a material of the magnetic substrate 11, sintered ferrite, composite ferrite (ferrite powder-containing resin) or the like can be used, but it is particularly preferable to use sintered ferrite having high mechanical strength and excellent magnetic characteristics.

  The first to fourth terminal electrodes E1 to E4 are all arranged at the corner. Therefore, the terminal electrodes E1 to E4 are exposed on three side surfaces (xy plane, xz plane, yz plane) of the coil component 10. Although not particularly limited, the terminal electrodes E1 to E4 are formed by the thick film plating method, and the thickness thereof is sufficiently thicker than the electrode pattern formed by the sputtering method or the screen printing.

  The magnetic resin layer 12 physically protects the multilayer structure 20 and fixes / supports the first to fourth terminal electrodes E1 to E4, and the first to fourth terminal electrodes E1 to E4. It is provided to embed the circumference. The upper surface (xy surface) of the magnetic resin layer 12 constitutes the same plane as the upper surfaces (xy surface) of the first to fourth terminal electrodes E1 to E4. As a material of the magnetic resin layer 12, it is preferable to use composite ferrite. The magnetic resin layer 12 has high magnetic properties, and constitutes a magnetic path together with the magnetic substrate 11.

  FIG. 2 is a schematic exploded perspective view of the coil component 10, and in particular, is a view for explaining the structure of the laminated structure 20. As shown in FIG.

  As shown in FIG. 2, the stacked structure 20 includes insulating layers 31 to 35 stacked in order from the magnetic substrate 11 side to the magnetic resin layer 12 side, and four of the insulating layers 31 to 35 are provided between the insulating layers 31 to 35. Conductor layers M1 to M4 are formed. The insulating layers 31 to 35 are made of, for example, a resin, and function to separate the first to fourth conductor layers M1 to M4 from each other.

  The first to fourth conductor layers M1 to M4 respectively include first to fourth spiral conductors 41 to 44. Among them, the first and second spiral conductors 41 and 42 are wound clockwise (clockwise) from the outer peripheral end to the inner peripheral end in a plan view, and the third and fourth spiral conductors 43 , 44 are wound counterclockwise (counterclockwise) from the outer peripheral end toward the inner peripheral end in a plan view. In the present embodiment, the number of turns of the first and second spiral conductors 41 and 42 is 6 turns, and the number of turns of the third and fourth spiral conductors 43 and 44 is 5 turns. In other words, the difference is one turn.

  The outer peripheral end 41 a of the first spiral conductor 41 is connected to the first terminal electrode E 1 via the connection conductors 61, 71, 81. The outer peripheral end 42 a of the second spiral conductor 42 is connected to the second terminal electrode E 2 via the connection conductors 72 and 82. The outer peripheral end 43 a of the third spiral conductor 43 is connected to the third terminal electrode E 3 via the connection conductor 83. The outer peripheral end 44a of the fourth spiral conductor 44 is connected to the fourth terminal electrode E4.

  The inner peripheral end 41 b of the first spiral conductor 41 is connected to the inner peripheral end 43 b of the third spiral conductor 43 via the connection conductor 65. The inner circumferential end 42 b of the second spiral conductor 42 is connected to the inner circumferential end 44 b of the fourth spiral conductor 44 via the connection conductor 75.

  Thereby, as shown in FIG. 3 which is an equivalent circuit diagram, the first spiral conductor 41 and the third spiral conductor 43 are short-circuited to form a first coil C1. The second spiral conductor 42 and the fourth spiral conductor 44 are short-circuited to form a second coil C2. The first coil C1 is connected in series between the first terminal electrode E1 and the third terminal electrode E3, and the second coil C2 is between the second terminal electrode E2 and the fourth terminal electrode E4. Connected in series. Therefore, the coil component 10 according to the present embodiment constitutes a common mode filter circuit.

  As shown in FIG. 2, the magnetic resin layer 12 has a shape in which portions corresponding to the first to fourth terminal electrodes E1 to E4 are hollowed out. Furthermore, through holes 31H to 35H are provided in the insulating layers 31 to 35, respectively, and the magnetic resin layer 13 is provided so as to fill the through holes 31H to 35H. The magnetic resin layer 13 is a part of the magnetic resin layer 12, and both have an integral structure.

  FIG. 4 is a partial cross-sectional view of the stacked structure 20 in the stacking direction.

  As shown in FIG. 4, the turns constituting the first spiral conductor 41 and the turns constituting the second spiral conductor 42 are provided at positions overlapping with each other as viewed from the z direction. Similarly, the turns constituting the third spiral conductor 43 and the turns constituting the fourth spiral conductor 44 are provided at positions overlapping with each other as viewed from the z direction. Thereby, the first spiral conductor 41 and the second spiral conductor 42 are magnetically coupled to each other, and the third spiral conductor 43 and the fourth spiral conductor 44 are magnetically coupled to each other. In the present embodiment, although the first and second spiral conductors 41 and 42 and the third and fourth spiral conductors 43 and 44 also overlap in the z direction, the first and second spiral conductors 41 and 42 also have different numbers of turns. And each turn which comprises the 2nd spiral conductors 41 and 42 and each turn which comprises the 3rd and 4th spiral conductors 43 and 44 do not necessarily overlap exactly.

And when the conductor width of the 1st and 2nd spiral conductors 41 and 42 is set to W1, and the conductor width of the 3rd and 4th spiral conductors 43 and 44 is set to W2,
W1 <W2
It is. As an example, W1 = 10 μm and W2 = 12 μm. The conductor width W2 of the third and fourth spiral conductors 43 and 44 is designed to be wider than the number of turns (for example, six turns) of the first and second spiral conductors 41 and 42. This is because the number of turns (for example, 5 turns) of the fourth spiral conductors 43 and 44 is smaller, and there is room for a wider conductor width. This makes it possible to reduce the direct current resistance of the third and fourth spiral conductors 43 and 44.

Further, the film thickness of the insulating layer 32 separating the first and second spiral conductors 41 and 42 is H1, and the film thickness of the insulating layer 34 separating the third and fourth spiral conductors 43 and 44 is H2 If you
H1 <H2
It is. As an example, H1 = 6 μm and H2 = 8 μm.

  The reason why the film thickness H1 of the insulating layer 32 is set smaller than the film thickness H2 of the insulating layer 34 is that the first and the fourth spiral conductors 43 and 44 have a number of turns (for example, five turns). This is because the number of turns (for example, six turns) of the second spiral conductors 41 and 42 is larger. This is because as the number of turns increases, the inductance increases, and the leakage inductance component correspondingly increases, so that the characteristic impedance can be made a desired value by balancing by increasing the parasitic capacitance component. It is. That is, by reducing the film thickness H1 of the insulating layer 32 located between the first and second spiral conductors 41 and 42 with many turns, parasitic capacitance components of the first and second spiral conductors 41 and 42 can be reduced. By increasing the film thickness H2 of the insulating layer 34 located between the third and fourth spiral conductors 43 and 44 with a smaller number of turns while increasing the parasitic capacitance of the third and fourth spiral conductors 43 and 44. The component is being reduced. Thereby, since the dispersion | variation in the characteristic impedance of each spiral conductor 41-44 is reduced, it becomes possible to acquire a high transmission characteristic.

  The film thickness H3 of the insulating layer 33 is not particularly limited, and if H1 = 6 μm and H2 = 8 μm, it may be about H3 = 5 to 10 μm.

  In the present invention, the “width” of the conductor refers to the side of the cross section in the stacking direction of the spiral conductor, and refers to the length of the side parallel to the xy plane. Further, in the present invention, the “film thickness” or “height” of the conductor is a side of the cross section in the stacking direction of the spiral conductor and indicates the length of the side in the z direction.

  In the present embodiment, the number of turns of the first and second spiral conductors 41 and 42 is 6 turns, the number of turns of the third and fourth spiral conductors 43 and 44 is 5 turns, and the difference is 1 turn. However, the present invention is not limited to this, and the difference in the number of turns may be any number of turns. Here, when the difference in the number of turns is an even number, the number of turns of the spiral conductor with many turns may be reduced and the number of turns of the spiral conductor with small numbers of turns may be increased to make the number of turns equal. Yes, but this is not possible if the difference in the number of turns is odd. Therefore, the present invention is particularly effective when the difference in the number of turns is an odd number.

  The “number of turns” in the present invention is considered ignoring the fraction generated due to the drawing to the terminal electrode. For example, although the first and second spiral conductors 41 and 42 are strictly 6.25 turns and the third and fourth spiral conductors 43 and 44 are strictly 5.25 turns, each spiral conductor Since 0.25 turns of 41 to 44 are fractions generated due to the extraction to the terminal electrodes E1 to E4, this fractions may be neglected and counted.

  Next, a method of forming the laminated structure 20 will be described.

  FIG.5 and FIG.6 is process drawing for demonstrating the formation method of the laminated structure 20 shown in FIG.

  First, the magnetic substrate 11 made of sintered ferrite or the like having a predetermined thickness is prepared, and the insulating layer 31 is formed on the upper surface thereof. Next, as shown to Fig.5 (a), the conductor layer M1 which consists of the 1st spiral conductor 41 and the connection conductors 52-55 is formed in the upper surface of the insulating layer 31. As shown in FIG. The number of turns of the first spiral conductor 41 is, for example, six turns, and the conductor width is W1 as described with reference to FIG. As a method of forming these conductors, after forming a base metal film using thin film processes, such as sputtering method, it is preferable to carry out plating growth to a desired film thickness using electrolytic plating. The same applies to the method of forming other conductors to be formed later.

  Next, as shown in FIG. 5B, the insulating layer 32 is formed on the upper surface of the insulating layer 31 so as to cover the conductor layer M1, and then the through holes 32a to 32f are formed in the insulating layer 32. Specifically, after applying a resin material by a spin coating method, an insulating layer 32 having through holes 32 a to 32 f can be formed by forming a predetermined pattern by a photolithography method. The same applies to a method for forming an insulating layer to be formed later. As described with reference to FIG. 4, the film thickness of the insulating layer 32 is H1. A through hole 32a shown in FIG. 5B is formed at a position where the outer peripheral end 41a of the first spiral conductor 41 is exposed, and a through hole 32e is a position where the inner peripheral end 41b of the first spiral conductor 41 is exposed. The through holes 32b, 32c, 32d and 32f are formed at positions where the connecting conductors 52 to 55 are exposed.

  Next, as shown in FIG. 5C, the conductor layer M2 including the second spiral conductor 42 and the connection conductors 61 and 63 to 65 is formed on the upper surface of the insulating layer 32. As described with reference to FIG. 4, each turn of the second spiral conductor is aligned so as to exactly overlap the same turn of the first spiral conductor 41. The outer peripheral end 42a and the inner peripheral end 42b of the second spiral conductor are formed at positions corresponding to the through holes 32b and 32f, respectively, and the connection conductors 61 and 63 to 65 are formed in the through holes 32a, 32c, 32d and 32e, respectively. It is formed at the corresponding position. Thereby, the outer peripheral end 42a of the second spiral conductor 42 is connected to the connection conductor 52, the inner peripheral end 42b of the second spiral conductor is connected to the connection conductor 55, and the connection conductors 61 and 65 are respectively the first spiral The connection conductors 63 and 64 are connected to the outer peripheral end 41 a and the inner peripheral end 41 b of the conductor 41, and are connected to the connection conductors 53 and 54, respectively.

  Next, as shown in FIG. 5D, the insulating layer 33 is formed on the upper surface of the insulating layer 32 so as to cover the conductor layer M2, and then the through holes 33a to 33f are formed in the insulating layer 33. The through hole 33b shown in FIG. 5D is formed at a position where the outer peripheral end 42a of the second spiral conductor 42 is exposed, and the through hole 33f is a position where the inner peripheral end 42b of the second spiral conductor 42 is exposed. The through holes 33a, 33c, 33d and 33e are formed at positions where the connecting conductors 61, 63 to 65 are exposed.

  Next, as shown in FIG. 6A, the conductor layer M3 including the third spiral conductor 43 and the connection conductors 71, 72, 74, and 75 is formed on the upper surface of the insulating layer 33. The number of turns of the third spiral conductor 43 is, for example, 5 turns, and the conductor width is W2 (> W1) as described with reference to FIG. The outer peripheral end 43a and the inner peripheral end 43b of the third spiral conductor are formed at positions corresponding to the through holes 33c and 33e respectively, and the connection conductors 71, 72, 74 and 75 are respectively through holes 33a, 33b, 33d, It is formed at a position corresponding to 33f. Thereby, the outer peripheral end 43a of the third spiral conductor is connected to the connection conductor 63, the inner peripheral end 43b of the third spiral conductor is connected to the connection conductor 65, and the connection conductors 72 and 75 are respectively the second spiral conductor The connection conductors 71 and 74 are connected to the outer peripheral end 42a and the inner peripheral end 42b, respectively, and are connected to the connection conductors 61 and 64, respectively.

  Next, as shown in FIG. 6B, the insulating layer 34 is formed on the upper surface of the insulating layer 33 so as to cover the conductor layer M3, and then the through holes 34a to 34f are formed in the insulating layer 34. As described with reference to FIG. 4, the film thickness of the insulating layer 34 is H2 (> H1). The through hole 34c shown in FIG. 6B is formed at a position where the outer peripheral end 43a of the third spiral conductor 43 is exposed, and the through hole 34e is a position where the inner peripheral end 43b of the third spiral conductor 43 is exposed. The through holes 34a, 34b, 34d and 34f are formed at positions where the connecting conductors 71, 72, 74 and 75 are exposed.

  Next, as shown in FIG. 6C, the conductor layer M4 including the fourth spiral conductor 44 and the connection conductors 81 to 83, 85 is formed on the upper surface of the insulating layer 34. As described with reference to FIG. 4, each turn of the fourth spiral conductor is aligned so as to exactly overlap the same turn of the third spiral conductor 43. The outer peripheral end 44a and the inner peripheral end 44b of the fourth spiral conductor are formed at positions corresponding to the through holes 34d and 34f, respectively, and the connecting conductors 81 to 83 and 85 are formed on the through holes 34a, 34b, 34c and 34e, respectively. It is formed at the corresponding position. Thereby, the outer peripheral end 44a of the fourth spiral conductor is connected to the connection conductor 74, the inner peripheral end 44b of the fourth spiral conductor is connected to the connection conductor 75, and the connection conductors 83 and 85 are respectively the third spiral conductor The connection conductors 81 and 82 are connected to the outer peripheral end 43a and the inner peripheral end 43b, respectively, and are connected to the connection conductors 71 and 72, respectively.

  Next, as shown in FIG. 6D, after the insulating layer 35 is formed on the upper surface of the insulating layer 34 so as to cover the conductor layer M4, through holes 35a to 35d are formed in the insulating layer 35. Through holes 35a to 35c shown in FIG. 6 (d) are formed at positions exposing connecting conductors 81 to 83, and through holes 35d are formed at positions exposing outer peripheral end 44a of fourth spiral coil 44. .

  Next, as shown in FIG. 6E, the first to fourth terminal electrodes E1 to E4 are formed on the surface of the insulating layer 35. The method of forming the first to fourth terminal electrodes E1 to E4 is as follows. First, a Cu film serving as a base is formed on the entire surface of the insulating layer 35 where the connection conductors 81 to 83 and the outer peripheral end 44 a of the fourth spiral coil 44 are exposed by a sputtering method. Thereafter, the sheet resist is attached, exposed and developed to selectively remove the sheet resist in the area where the first to fourth terminal electrodes E1 to E4 are to be formed, and the Cu film in the area is exposed. . Then, thick first to fourth terminal electrodes E1 to E4 are formed by electroplating in this state. Thereafter, the sheet resist is removed, and the unnecessary Cu film is removed by etching the entire surface, whereby columnar first to fourth terminal electrodes E1 to E4 are formed.

  Next, as shown in FIG. 6F, an ion milling mask 36 having an opening 36H is formed, and ion milling is performed in this state. Thereby, the through holes 31H to 35H are formed in the insulating layers 31 to 35, and the magnetic substrate 11 is exposed at the positions. Then, the composite ferrite paste is formed on the entire surface, and when hardened, the magnetic resin layer 12 filling the periphery of the first to fourth terminal electrodes E1 to E4 and the magnetic resin layer embedded in the through holes 31H to 35H 13 are formed. Thereafter, the unnecessary composite ferrites on the first to fourth terminal electrodes E1 to E4 are removed, whereby the coil component 10 according to the present embodiment is completed.

  As described above, in the coil component 10 according to the present embodiment, the number of turns (6 turns) of the first and second spiral conductors 41 and 42 is the number of turns of the third and fourth spiral conductors 43 and 44. Since the film thickness H1 of the insulating layer 32 is smaller than the film thickness H2 of the insulating layer 34 more than (5 turns), the variation in the characteristic impedance due to the inductance difference due to the difference in the number of turns is suppressed. It is possible to obtain high transmission characteristics.

  Moreover, since the conductor width W2 of the third and fourth spiral conductors 43 and 44 with a small number of turns is larger than the conductor width W1 of the first and second spiral conductors 41 and 42 with a large number of turns. It is also possible to reduce the direct current resistance as compared with the case where the conductor width is the same.

  FIG. 7 is a partial plan view showing a part of a first spiral conductor 41 according to a modification.

In the modification shown in FIG. 7, the conductor width of the first spiral conductor 41 is thicker from the inner peripheral side toward the outer peripheral side. In other words, when the first of the first to sixth turn each conductor ₄₁ 1-41 ₆ spiral conductor 41, the conductor width W11~W16 conductor ₄₁ 1-41 _6,
W11 <W12 <W13 <W14 <W15 <W16
It is. Preferably, the spacing between adjacent conductors is constant.

  Although not shown, when the first spiral conductor 41 has such a planar shape, the second spiral conductor 42 also needs to match the planar shape of the first spiral conductor 41. That is, each turn of the second spiral conductor 42 needs to be thicker from the inner circumferential side to the outer circumferential side so as to have the same conductor width as the same turn of the first spiral conductor 41. The same applies to the third spiral conductor 43 and the fourth spiral conductor 44, and the thickness is increased from the inner circumferential side toward the outer circumferential side.

  According to such a configuration, variation in the characteristic impedance is suppressed even in the same spiral conductor. This is because, in a planar spiral conductor, the leakage inductance component tends to be smaller as the inner peripheral turn is, and the leakage inductance component tends to be larger as the outer peripheral turn. That is, by increasing the conductor width from the inner periphery toward the outer periphery, the parasitic capacitance component is made smaller as the inner periphery turns and the parasitic capacitance component is made larger as the outer periphery turns, thereby suppressing the in-plane variation of the characteristic impedance. Therefore, higher transmission characteristics can be obtained.

In the case where the conductor width is increased from the inner periphery toward the outer periphery, the conductor width may be increased continuously from the inner periphery toward the outer periphery, or in stages from the inner periphery toward the outer periphery You may increase the conductor width accordingly. Moreover, it is not essential that the conductor widths differ in all the turns, and the conductor widths may be the same in some of the turns. As an example,
W11 = W12 <W13 = W14 <W15 = W16
It does not matter. In this case, when a predetermined turn position the conductors ₄₁ 3, 41 ₄ in the middle, the conductor ₄₁ 1, 41 ₂ constitutes a thinner inner turn, conductors ₄₁ 5, 41 ₆ constitute a thicker outer circumferential turns .

  Although the preferred embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention. It is needless to say that they are included in the scope.

  For example, in the embodiment described above, the terminal electrodes E1 to E4 have a bump shape embedded in the magnetic resin layer 12, but the shape and structure of the terminal electrodes are not limited to this in the present invention. Therefore, a terminal electrode formed by baking silver paste or the like on the surface of the base may be used, or a terminal electrode formed by bonding a terminal fitting to the base may be used.

DESCRIPTION OF REFERENCE NUMERALS 10 coil parts 11 magnetic substrate 12 13 magnetic resin layer 20 laminated structure 31 to 35 insulating layers 31H to 35H through holes 32a to 32f, 33a to 33f, 34a to 34f, 35a to 35d through holes 36 mask 36H for ion milling Portions 41 to 44 Spiral conductors 41 _{1 to} 41 ₆ conductors 52 to 55, 61, 63 to 65, 71, 72, 74, 75, 81 to 83, 85 Connecting conductors 41a to 44a Outer peripheral end 41b to 44b Inner peripheral end C1, C2 coil E1 to E4 terminal electrode M1 to M4 conductor layer

Claims (6)

And first, second, third and fourth spiral conductors stacked on one another through a plurality of insulating layers,
The plurality of insulating layers are provided between a first insulating layer provided between the first spiral conductor and the second spiral conductor, and between the third spiral conductor and the fourth spiral conductor. And a second insulating layer provided on the
The first spiral conductor and the third spiral conductor are short-circuited to form a first coil,
The second spiral conductor and the fourth spiral conductor are short-circuited to form a second coil,
The number of turns of the first spiral conductor and the number of turns of the second spiral conductor are equal to each other.
The number of turns of the third spiral conductor and the number of turns of the fourth spiral conductor are equal to each other.
The number of turns of the first and second spiral conductors is greater than the number of turns of the third and fourth spiral conductors,
A coil component characterized in that a film thickness of the first insulating layer is thinner than a film thickness of the second insulating layer. The conductor widths of the first spiral conductor and the second spiral conductor are equal to each other.
The conductor widths of the third spiral conductor and the fourth spiral conductor are equal to each other.
2. The coil component according to claim 1, wherein a conductor width of the third and fourth spiral conductors is wider than a conductor width of the first and second spiral conductors.   The coil component according to claim 1, wherein the first, second, third and fourth spiral conductors are stacked in this order on a magnetic substrate.   The difference between the number of turns of the first and second spiral conductors and the number of turns of the third and fourth spiral conductors is an odd number, according to any one of claims 1 to 3. Coil component as described.   Each of the first, second, third and fourth spiral conductors is located on the inner peripheral side of a predetermined turn having a predetermined conductor width and the predetermined turn, and the conductor width is greater than the predetermined conductor width 5. The method according to any one of claims 1 to 4, further comprising: a thin inner circumferential turn; and an outer circumferential turn positioned on an outer circumferential side of the predetermined turn and having a conductor width wider than the predetermined conductor width. Coil component as described.   The plurality of turns constituting each of the first, second, third and fourth spiral conductors are characterized in that the conductor width increases continuously or stepwise from the inner circumferential side toward the outer circumferential side. The coil component according to Item 5.

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