JP6549902B2 - Dicing die bond film, method of manufacturing semiconductor device and semiconductor device - Google Patents

Description

  The present invention relates to a dicing die bond film, a method of manufacturing a semiconductor device, and a semiconductor device.

  DESCRIPTION OF RELATED ART The dicing die-bonding film which has a base material layer, the adhesive layer arrange | positioned on a base material layer, and the adhesive film arrange | positioned on an adhesive layer is known (for example, refer patent document 1). The substrate layer can be defined on both the contact surface in contact with the pressure-sensitive adhesive layer and the back surface opposite to the contact surface.

  2. Description of the Related Art In recent years, with the advancement of semiconductor chips, electrostatic breakdown has become a problem. In order to prevent electrostatic damage, there is a technique for enhancing the antistatic performance by adding a conductive material to the pressure-sensitive adhesive layer.

  There is also a technique of adding a conductive material to an adhesive film in order to impart conductivity to the adhesive film.

JP, 2015-5636, A

  The technique of adding a conductive material to the pressure-sensitive adhesive layer has a problem that the conductive material scatters in the apparatus at the time of dicing and adheres to the semiconductor wafer or the semiconductor chip. The conductive material may also scatter during expansion.

  The technology of adding a conductive material to an adhesive film has a problem that the conductive material promotes corrosion of the wire when the adhesive film is used in a wire embedding application. There is also a problem that the conductive material scatters during dicing.

  By the way, in a dicing die bond film, there are cases where the cover film can not be peeled well. The inventors of the present invention have intensively studied the cause of the peeling failure and found that the charging of the back surface of the base material layer and the cover film causes the peeling failure of the cover film.

  An object of the present invention is to provide a dicing die bond film which can prevent peeling failure of a cover film and can prevent electrostatic breakdown of a semiconductor chip.

  Another object of the present invention is to provide a method of manufacturing a semiconductor device using a dicing die bond film. Another object of the present invention is to provide a semiconductor device obtained by using a dicing die bond film.

The present invention relates to a roll-shaped dicing die bond film. The dicing die bond film of the present invention includes a cover film and a dicing sheet-integrated adhesive film disposed on the cover film. The dicing sheet-integrated adhesive film includes a dicing sheet including a base layer having both surfaces defined by a first surface and a second surface opposite to the first surface and an adhesive layer in contact with the first surface. The dicing sheet-integrated adhesive film further includes an adhesive film in which both surfaces are defined by a first main surface in contact with the pressure-sensitive adhesive layer and a second main surface opposite to the first main surface. The surface resistance of the second surface is 1.0 × 10 ¹¹ Ω / sq. It is below. 1.0 × 10 ¹¹ Ω / sq. Since it is the following, the peeling defect of a cover film can be prevented. The surface resistivity of the second major surface is 1.0 × 10 ¹² Ω / sq. It is above. 1.0 × 10 ¹² Ω / sq. Because of the above, it is possible to prevent the leakage current at the time of packaging and the like, and to prevent electrostatic breakdown of the semiconductor chip.

  Preferably, the base layer includes a first base layer having a first side and a second base layer having a second side. Preferably, the second substrate layer comprises a conductive component. Preferably, the thickness of the second substrate layer is 1 μm to 30 μm. Preferably, the conductive component is an organic conductive component. Preferably, the second base material layer further contains one or more resins selected from the group consisting of polyethylene, polypropylene, and ethylene vinyl acetate copolymer.

  Preferably, the breaking elongation of the dicing sheet is 500% or more.

  Preferably, the adhesive film comprises an epoxy resin or a phenolic resin. Preferably, the adhesive film comprises an acrylic resin. Preferably, the tack strength at 25 ° C. in the adhesive film is 0.2 N or more and 3.0 N or less.

  Preferably, the cover film is a polyethylene terephthalate film. Preferably, the thickness of the cover film is 20 μm to 75 μm.

  In the present invention, die division is performed after the steps of preparing a dicing die bond film, pressing a semiconductor wafer to an adhesive film of a dicing sheet integrated adhesive film, and pressing a semiconductor wafer to an adhesive film. The present invention relates to a method of manufacturing a semiconductor device including a step of forming a die bonding chip and a step of pressing the die bonding chip onto an adherend. The step of pressing the semiconductor wafer onto the adhesive film includes the step of peeling the dicing sheet-integrated adhesive film from the cover film. The die bonding chip includes a semiconductor chip and a film adhesive disposed on the semiconductor chip.

  The invention also relates to a semiconductor device.

It is a schematic plan view of a dicing die bond film. It is a schematic sectional drawing of a part of dicing die-bonding film. It is a schematic sectional drawing of the manufacturing process of a semiconductor device. It is a schematic sectional drawing of the manufacturing process of a semiconductor device. It is a schematic sectional drawing of the manufacturing process of a semiconductor device. It is a schematic sectional drawing of the manufacturing process of a semiconductor device. FIG. 18 is a schematic cross-sectional view of a portion of a dicing die bond film in a fourth modified example. FIG. 26 is a schematic cross-sectional view of the manufacturing process of the semiconductor device in Modification 7; FIG. 31 is a schematic cross-sectional view of the manufacturing process of the semiconductor device in Modification 8; It is a schematic sectional drawing of the dicing sheet integrated adhesive film in an Example.

  Hereinafter, the present invention will be described in detail by way of embodiments, but the present invention is not limited to these embodiments.

Embodiment 1
(Dicing die bond film 1)
As shown in FIG. 1, the dicing die bond film 1 has a roll shape.

  The dicing die bond film 1 is a dicing sheet integrated adhesive film 71a, 71b, 71c,..., 71m (hereinafter referred to as "dicing sheet integral adhesive film 71") disposed on the cover film 13 and the cover film 13. )including. Distance between dicing sheet integrated adhesive film 71a and dicing sheet integrated adhesive film 71b, distance between dicing sheet integrated adhesive film 71b and dicing sheet integrated adhesive film 71c, .... dicing sheet integrated adhesive film 71l and The distance between the dicing sheet integrated adhesive film 71m is constant.

  As shown in FIG. 2, the dicing sheet integrated adhesive film 71 includes the dicing sheet 12 and the adhesive film 11 disposed on the dicing sheet 12. The dicing sheet 12 includes a base material layer 121 and an adhesive layer 122 disposed on the base material layer 121. Both surfaces of the base material layer 121 are defined by a first surface 121 a in contact with the pressure-sensitive adhesive layer 122 and a second surface 121 b opposed to the first surface 121 a. The adhesive film 11 has both surfaces defined by a first major surface 11 a in contact with the adhesive layer 122 and a second major surface 11 b facing the first major surface 11 a. The second major surface 11 b is in contact with the cover film 13.

The surface resistance value of the second surface 121 b is 1.0 × 10 ¹¹ Ω / sq. Or less, preferably 8.0 × 10 ¹⁰ Ω / sq. It is below. 1.0 × 10 ¹¹ Ω / sq. Since it is the following, the peeling defect of the cover film 13 can be prevented. The lower limit of the surface resistance value of the second surface 121 b is, for example, 1.0 × 10 ⁵ Ω / sq. , 1.0 × 10 ⁷ Ω / sq. , 1.0 × 10 ⁸ Ω / sq. Etc.

  The gloss of the second surface 121 b is preferably 1 to 20.

The surface resistance value of the second major surface 11 b is 1.0 × 10 ¹² Ω / sq. Or more, preferably 1.0 × 10 ¹⁴ Ω / sq. It is above. 1.0 × 10 ¹² Ω / sq. Because of the above, it is possible to prevent the leakage current at the time of packaging and the like, and to prevent electrostatic breakdown of the semiconductor chip. The upper limit of the surface resistance value of the second major surface 11 b is, for example, 1.0 × 10 ¹⁷ Ω / sq. , 1.0 × 10 ¹⁸ Ω / sq. Etc.

  The breaking elongation of the dicing sheet 12 is preferably 500% or more. Expandability is favorable in it being 500% or more. The haze of the dicing sheet 12 is preferably 45% to 95%.

  The thickness of the base material layer 121 is preferably 50 μm to 150 μm.

  The base layer 121 includes a first base layer 1211 having a first surface 121a. The first base layer 1211 can define both sides with the first surface 121 a and a hidden surface facing the first surface 121 a. The base layer 121 further includes a second base layer 1212 having a second surface 121 b. The second base layer 1212 is in contact with the hidden surface of the first base layer 1211.

  The first base layer 1211 contains a resin. Examples of the resin include polyethylene, polypropylene, ethylene vinyl acetate copolymer (EVA) and the like. Polyethylene, polypropylene and ethylene-vinyl acetate copolymer are preferred in order to develop good expandability. Polyethylene terephthalate is not preferable from the viewpoint of poor expandability.

  When the first base layer 1211 contains a conductive component, the conductive component may be scattered into the apparatus at the time of dicing. Therefore, preferably, the first base layer 1211 does not contain a conductive component.

  The thickness of the first base layer 1211 is preferably 30 μm to 150 μm.

  Preferably, the second substrate layer 1212 contains a conductive component. This is because the conductive component lowers the surface resistance value of the second surface 121b.

  Examples of the conductive component include organic conductive components and inorganic conductive components. The organic conductive component is preferable because it does not easily fall off and mixes easily with the resin. Examples of the organic conductive component include conductive polymers.

  Preferably, the second base layer 1212 contains a resin. Examples of the resin include polyethylene, polypropylene, ethylene vinyl acetate copolymer and the like. Polyethylene, polypropylene, and ethylene vinyl acetate copolymer are preferable because they easily mix with the organic conductive component and exhibit good expandability. Polyethylene terephthalate is not preferable from the viewpoint of poor expandability.

  The thickness of the second base layer 1212 is preferably 1 μm to 30 μm.

  The ratio of the thickness of the first base layer 1211 to the thickness of the second base layer 1212 (the thickness of the first base layer 1211 / the thickness of the second base layer 1212) is preferably 1 to 30.

  The pressure-sensitive adhesive layer 122 includes a contact portion 122A in contact with the adhesive film 11. The adhesive layer 122 further includes a peripheral portion 122B disposed around the contact portion 122A. The contact portion 122A is cured by radiation. On the other hand, the peripheral portion 122B has the property of being hardened by radiation. As radiation, ultraviolet light is preferred.

  The pressure-sensitive adhesive layer 122 is formed of a pressure-sensitive adhesive and has adhesiveness. Such a pressure-sensitive adhesive is not particularly limited, and can be appropriately selected from known pressure-sensitive adhesives. Specifically, as the pressure-sensitive adhesive, for example, acrylic pressure-sensitive adhesives, rubber-based pressure-sensitive adhesives, vinyl alkyl ether-based pressure-sensitive adhesives, silicone-based pressure-sensitive adhesives, polyester-based pressure-sensitive adhesives, polyamide-based pressure-sensitive adhesives, urethane-based pressure-sensitive adhesives Pressure-sensitive adhesives, styrene-diene block copolymer-based pressure-sensitive adhesives, and known pressure-sensitive adhesives such as a creep-characteristic-modified pressure-sensitive adhesive in which a heat melting resin having a melting point of about 200.degree. Among the adhesives disclosed in JP-A-56-61468, JP-A-61-174857, JP-A-63-17981, JP-A-56-13040, etc., an adhesive having such properties is suitably selected. It can be selected and used. Further, as the pressure-sensitive adhesive, a radiation-curable pressure-sensitive adhesive (or an energy ray-curable pressure-sensitive adhesive) or a thermally expandable pressure-sensitive adhesive can also be used. The pressure-sensitive adhesives can be used alone or in combination of two or more.

  As the pressure-sensitive adhesive, acrylic pressure-sensitive adhesives and rubber pressure-sensitive adhesives can be suitably used, and in particular, acrylic pressure-sensitive adhesives are preferable. Acrylic-based pressure-sensitive adhesives which use an acrylic polymer (homopolymer or copolymer) containing one or more kinds of (meth) acrylic acid alkyl ester as a monomer component as a base polymer Agents.

  Examples of (meth) acrylic acid alkyl esters in acrylic pressure-sensitive adhesives include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, and (meth) acrylate Butyl, isobutyl (meth) acrylate, s-butyl (meth) acrylate, t-butyl (meth) acrylate, pentyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, (meth) acrylate ) Octyl acrylate, 2-ethylhexyl (meth) acrylate, isooctyl (meth) acrylate, nonyl (meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate ( Meta) Undecyl acrylate, Dodecyl (meth) acrylate, (meth) Tridecyl chlorate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, hexadecyl (meth) acrylate, heptadecyl (meth) acrylate, octadecyl (meth) acrylate, nonadecyl (meth) acrylate, (meth) acrylic And (meth) acrylic acid alkyl esters such as acid eicosyl and the like. The (meth) acrylic acid alkyl ester is preferably a (meth) acrylic acid alkyl ester having 4 to 18 carbon atoms in the alkyl group. The alkyl group of the (meth) acrylic acid alkyl ester may be linear or branched.

  In addition, for the purpose of modification such as cohesion, heat resistance, and crosslinkability, the acrylic polymer is, if necessary, another monomer component copolymerizable with (meth) acrylic acid alkyl ester (copolymer Units corresponding to the sexing monomer component) may be included. As such a copolymerizable monomer component, for example, carboxyl such as (meth) acrylic acid (acrylic acid, methacrylic acid), carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, crotonic acid and the like Group-containing monomers; acid anhydride group-containing monomers such as maleic anhydride and itaconic anhydride; hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, hydroxybutyl (meth) acrylate, hydroxy (meth) acrylate Hydroxyl-containing monomers such as hexyl, hydroxyoctyl (meth) acrylate, hydroxydecyl (meth) acrylate, hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl methacrylate; styrene sulfonic acid Sulfonic acid group-containing monomers such as allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid; 2 Phosphoric acid group-containing monomers such as hydroxyethyl acryloyl phosphate; (meth) acrylamide, N, N-dimethyl (meth) acrylamide, N-butyl (meth) acrylamide, N-methylol (meth) acrylamide, N-methylolpropane (meth ) (N-substituted) amide type monomers such as acrylamide; (meth) acrylic acid such as aminoethyl (meth) acrylate, N, N- dimethylaminoethyl (meth) acrylate, t-butylamino ethyl (meth) acrylate acid Minoalkyl monomers; (meth) acrylate alkoxyalkyl monomers such as methoxyethyl (meth) acrylate, ethoxyethyl (meth) acrylate; cyanoacrylate monomers such as acrylonitrile and methacrylonitrile; glycidyl (meth) acrylate and the like Epoxy group-containing acrylic monomers; styrene monomers such as styrene and α-methylstyrene; vinyl ester monomers such as vinyl acetate and vinyl propionate; olefin monomers such as isoprene, butadiene and isobutylene; vinyl ether monomers such as vinyl ether; N-vinyl pyrrolidone, methyl vinyl pyrrolidone, vinyl pyridine, vinyl piperidone, vinyl pyrimidine, vinyl piperazine, vinyl pyrazine, vinyl pyrrole, vinyl imido Nitrogen-containing monomers such as azole, vinyl oxazole, vinyl morpholine, N-vinylcarboxylic acid amides, N-vinylcaprolactam; maleimide-based monomers such as N-cyclohexyl maleimide, N-isopropyl maleimide, N-lauryl maleimide, N-phenyl maleimide and the like Itaconimide-based monomers such as N-methyl itaconimide, N-ethyl itaconimide, N-butyl itaconimide, N-octyl itaconimide, N-2-ethylhexyl itaconimide, N-cyclohexyl itaconimide, N-lauryl thioconimide, etc. N- (Meth) acryloyloxymethylene succinimide, N- (Meth) acryloyl-6-oxyhexamethylene succinimide, N- (Meth) acryloyl-8-oxyoctamethylenes Succinimide based monomers such as synimide; polyethylene glycol (meth) acrylate, polypropylene glycol (meth) acrylate, methoxy ethylene glycol (meth) acrylate, glycol based acrylic ester monomers such as methoxy polypropylene glycol (meth) acrylate; ) Acrylic acid ester monomers having a heterocyclic ring such as tetrahydrofurfuryl acrylate, fluorine (meth) acrylate, silicone (meth) acrylate, a halogen atom, a silicon atom, etc .; hexanediol di (meth) acrylate, (poly) ethylene glycol Di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) Acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy acrylate, polyester acrylate, urethane acrylate, divinyl benzene, butyl di (meth) acrylate, hexyl di (meth) And polyfunctional monomers such as acrylates. One or two or more of these copolymerizable monomer components can be used.

  When a radiation-curable pressure-sensitive adhesive (or energy ray-curable pressure-sensitive adhesive) is used as the pressure-sensitive adhesive, the radiation-curable pressure-sensitive adhesive (composition) is, for example, a polymer side chain or main chain of radical reactive carbon-carbon double bond. For example, intrinsic type radiation-curable pressure-sensitive adhesives that use a polymer having in the chain or at the main chain end as a base polymer, and radiation-curable pressure-sensitive adhesives in which an ultraviolet-curable monomer component or oligomer component is blended in the pressure-sensitive adhesive. Be When a heat-expandable pressure-sensitive adhesive is used as the pressure-sensitive adhesive, the heat-expandable pressure-sensitive adhesive includes, for example, a heat-expandable pressure-sensitive adhesive containing a pressure-sensitive adhesive and a foaming agent (in particular, heat expandable microspheres).

  The preferred monomer component is 2-ethylhexyl acrylate. Preferably, the acrylic pressure-sensitive adhesive contains an acrylic polymer having a urethane bond.

  The pressure-sensitive adhesive layer 122 contains various additives (for example, tackifier resin, colorant, thickener, extender, filler, plasticizer, anti-aging agent, antioxidant, surfactant, crosslinking agent, etc.) be able to.

  The pressure-sensitive adhesive layer 122 is formed, for example, using a conventional method of forming a sheet-like layer by mixing a pressure-sensitive adhesive (pressure-sensitive adhesive) and, if necessary, a solvent and other additives. be able to. Specifically, for example, a method of applying a mixture containing an adhesive and, if necessary, a solvent and other additives on a substrate layer 121, and applying the mixture on a suitable separator (such as release paper) The pressure-sensitive adhesive layer 122 can be formed by a method of forming the pressure-sensitive adhesive layer 122 and transferring (transferring) the same onto the base material layer 121 or the like.

  The thickness of the pressure-sensitive adhesive layer 122 is preferably 3 μm or more, more preferably 5 μm or more. The thickness of the adhesive layer 122 is preferably 50 μm or less, more preferably 30 μm or less. The pressure-sensitive adhesive layer 122 may have a multi-layered shape.

(Adhesive film 11)
The adhesive film 11 has a thermosetting property.

  The tack strength at 25 ° C. in the adhesive film 11 is preferably 0.2 N to 3.0 N. Pickup property is favorable in it being 0.2N-3.0N.

  The loss elastic modulus G ′ ′ at 120 ° C. in the adhesive film 11 is preferably 2 KPa to 20 KPa. It is possible to prevent the protrusion of the adhesive film 11 at the time of die bonding as it is 2 KPa or more. The wettability with respect to the to-be-adhered body of the adhesive film 11 at the time of die bonding is favorable in it being 20 or less KPa.

  The adhesive film 11 contains a resin component. As a resin component, a thermoplastic resin, a thermosetting resin, etc. are mentioned.

  Preferably, the thermoplastic resin is an acrylic resin.

  The acrylic resin is not particularly limited, and one or two or more types of esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms, are components. And polymers (acrylic copolymers) and the like. Examples of the alkyl group include methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2- Ethylhexyl group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group, dodecyl group and the like.

  Further, other monomers for forming a polymer (acrylic copolymer) are not particularly limited. For example, acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid Or a carboxyl group-containing monomer such as crotonic acid, an acid anhydride monomer such as maleic anhydride or itaconic acid, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, (meth ) 4-hydroxybutyl acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4) -Hydroxymethyl shiki Hydroxyl-containing monomers such as hexyl) -methyl acrylate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamido-2-methylpropane sulfonic acid, (meth) acrylamidopropane sulfonic acid, sulfopropyl (meth) acrylate Or sulfonic acid group-containing monomers such as (meth) acryloyloxy naphthalene sulfonic acid, or phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloyl phosphate.

  Among acrylic resins, those having a weight average molecular weight of 100,000 or more are preferable, those of 300,000 to 3,000,000 are more preferable, and those of 500,000 to 2,000,000 are more preferable. It is because it is excellent in adhesiveness and heat resistance that it is in this numerical range. The weight average molecular weight is a value measured by GPC (gel permeation chromatography) and calculated by polystyrene conversion.

  The acrylic resin preferably contains a functional group. As a functional group, a hydroxyl group, a carboxy group, a nitrile group etc. are mentioned, for example. Among these, a nitrile group is preferable.

  The content of the thermoplastic resin in 100% by weight of the resin component is preferably 10% by weight or more, more preferably 20% by weight or more. Flexibility is favorable in it being 10 weight% or more. The content of the thermoplastic resin in 100% by weight of the resin component is preferably 80% by weight or less, more preferably 70% by weight or less.

  As a thermosetting resin, an epoxy resin, a phenol resin, etc. are mentioned.

  The epoxy resin is not particularly limited. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluonylene type, phenol novolac type A bifunctional epoxy resin or polyfunctional epoxy resin such as orthocresol novolac type, trishydroxyphenylmethane type, tetraphenylol ethane type or epoxy resin such as hydantoin type, trisglycidyl isocyanurate type or glycidyl amine type is used. Among these epoxy resins, novolac epoxy resins, biphenyl epoxy resins, trishydroxyphenylmethane resins or tetraphenylolethane epoxy resins are particularly preferable. It is because these epoxy resins are rich in the reactivity with the phenol resin as a hardening agent, and are excellent in heat resistance etc.

The epoxy equivalent of the epoxy resin is preferably 100 g / eq. Or more, more preferably 120 g / eq. It is above. The epoxy equivalent of the epoxy resin is preferably 1000 g / eq. Or less, more preferably 500 g / eq. It is below.
In addition, the epoxy equivalent of an epoxy resin can be measured by the method prescribed | regulated to JISK 7236-2009.

  Phenolic resin acts as a curing agent for epoxy resin, and for example, novolac type phenolic resin such as phenol novolac resin, phenolic aralkyl resin, cresol novolac resin, tert-butylphenol novolac resin, nonylphenol novolac resin, resol type phenolic resin And polyoxystyrenes such as polyparaoxystyrene. Among these phenol resins, phenol novolak resins and phenol aralkyl resins are particularly preferable. This is because connection reliability of the semiconductor device can be improved.

  The hydroxyl equivalent of the phenol resin is preferably 150 g / eq. Or more, more preferably 200 g / eq. It is above. The hydroxyl equivalent of the phenol resin is preferably 500 g / eq. Or less, more preferably 300 g / eq. It is below.

  The compounding ratio of the epoxy resin and the phenol resin is preferably, for example, 0.5 to 2.0 equivalents of hydroxyl group in the phenol resin per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 to 1.2 equivalents. That is, when the mixing ratio of both components is out of the range, a sufficient curing reaction does not proceed, and the properties of the cured product are easily deteriorated.

  The total content of the epoxy resin and the phenol resin in 100% by weight of the resin component is preferably 20% by weight or more, more preferably 30% by weight or more. The total content of the epoxy resin and the phenol resin is preferably 90% by weight or less, more preferably 80% by weight or less.

  Preferably, the adhesive film 11 contains an inorganic filler.

  As an inorganic filler, for example, silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, silicon nitride, aluminum, copper, silver, gold, nickel, chromium, lead, tin, zinc, palladium , Solder, carbon and the like. Among them, silica, alumina, silver and the like are preferable, and silica is more preferable.

  The average particle size of the inorganic filler is preferably 0.001 μm to 1 μm. The average particle size of the filler can be measured by the following method.

Measurement of Average Particle Size of Inorganic Filler The adhesive film 11 is put in a crucible and ignited by being ignited at 700 ° C. for 2 hours in the atmosphere. The obtained ash is dispersed in pure water, subjected to ultrasonic treatment for 10 minutes, and the average particle size is determined using a laser diffraction scattering particle size distribution measuring apparatus (manufactured by Beckman Coulter, "LS 13 320"; wet method). .

  The content of the inorganic filler in the adhesive film 11 is preferably 0% by weight or more, more preferably 1% by weight or more, still more preferably 3% by weight or more, and still more preferably 20% by weight or more. The content of the inorganic filler in the adhesive film 11 is preferably 85% by weight or less, more preferably 20% by weight or less, and still more preferably 15% by weight or less.

  The adhesive film 11 may appropriately contain, in addition to the components described above, compounding agents generally used for film production, such as a silane coupling agent, a curing accelerator, a crosslinking agent, and the like.

  When the adhesive film 11 contains a conductive component, the conductive component may scatter in the apparatus during dicing. Electrically conductive components may also promote corrosion of the wire. Therefore, preferably, the adhesive film 11 does not contain a conductive component.

  The adhesive film 11 can be manufactured by a usual method. For example, an adhesive composition solution containing each of the above-mentioned components is prepared, and the adhesive composition solution is applied on a substrate separator so as to have a predetermined thickness to form a coating film, and then the coating film is dried. The adhesive film 11 can be manufactured.

  Although it does not specifically limit as a solvent used for adhesive composition solution, The organic solvent which can melt | dissolve, knead | mix, or disperse | distribute said each component uniformly is preferable. For example, ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone and cyclohexanone, toluene, xylene and the like can be mentioned. The application method is not particularly limited. As a method of solvent coating, a die coater, a gravure coater, a roll coater, a reverse coater, a comma coater, a pipe doctor coater, screen printing etc. are mentioned, for example. Among them, a die coater is preferable in terms of high uniformity of coating thickness.

  As the substrate separator, a plastic film or paper surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine-based release agent, or a long chain alkyl acrylate release agent can be used. Examples of the method for applying the adhesive composition solution include roll coating, screen coating, and gravure coating. Moreover, the drying conditions of a coating film are not specifically limited, For example, it can carry out by drying temperature 70-160 degreeC and drying time 1-5 minutes.

  As a method of producing the adhesive film 11, for example, a method of mixing the respective components with a mixer and pressing the obtained mixture to produce the adhesive film 11 is also suitable. As a mixer, a planetary mixer etc. are mentioned.

  The thickness of the adhesive film 11 is preferably 2 μm or more, more preferably 5 μm or more, and still more preferably 10 μm or more. The thickness of the adhesive film 11 is preferably 200 μm or less, more preferably 150 μm or less, and still more preferably 100 μm or less.

  The adhesive film 11 is used to manufacture a semiconductor device. Specifically, the adhesive film 11 is used in die bonding applications.

(Cover film 13)
The cover film 13 may, for example, be a polyethylene terephthalate (PET) film. Preferably, the cover film 13 is a polyethylene terephthalate film subjected to release treatment.

  The thickness of the cover film 13 is preferably 20 μm to 75 μm, more preferably 25 μm to 50 μm.

(Method of manufacturing semiconductor device)
As shown in FIG. 3, the semiconductor wafer 4 is pressure bonded to the dicing sheet-integrated adhesive film 71. Examples of the semiconductor wafer 4 include a silicon wafer, a silicon carbide wafer, and a compound semiconductor wafer. A gallium nitride wafer etc. are mentioned as a compound semiconductor wafer.

  As a pressure bonding method, for example, a method of pressing by a pressing means such as a pressure bonding roll, etc. may be mentioned.

35 degreeC or more is preferable and, as for crimping | compression-bonding temperature (sticking temperature), 37 degreeC or more is more preferable. The upper limit of the pressure bonding temperature is preferably lower, preferably 50 ° C. or less, more preferably 45 ° C. or less. By pressure bonding at a low temperature, it is possible to prevent the thermal influence on the semiconductor wafer 4 and to suppress the warpage of the semiconductor wafer 4. The pressure is preferably 1 × 10 ⁵ Pa to 1 × 10 ⁷ Pa, and more preferably 2 × 10 ⁵ Pa to 8 × 10 ⁶ Pa.

  As shown in FIG. 4, a die bonding chip 5 is formed by dicing the semiconductor wafer 4. The die bonding chip 5 includes a semiconductor chip 41 and a film adhesive 111 disposed on the semiconductor chip 41. The semiconductor chip 41 includes an electrode pad. Aluminum etc. are mentioned as a material of an electrode pad. In this process, a cutting method called full cut in which the dicing sheet integrated adhesive film 71 is cut can be adopted. The dicing apparatus is not particularly limited, and a conventionally known one can be used. Further, since the semiconductor wafer 4 is adhered and fixed by the dicing sheet integrated adhesive film 71, chipping and chipping can be suppressed, and breakage of the semiconductor wafer 4 can also be suppressed.

  Pick up the die bonding chip 5. The method of pickup is not particularly limited, and various conventionally known methods can be adopted. For example, a method of pushing up each semiconductor chip 41 with a needle from the dicing sheet integrated adhesive film 71 side and then picking up the die bonding chip 5 by a pickup device may be mentioned.

  As shown in FIG. 5, the die-bonding chip 5 is pressure-bonded to the adherend 6 to obtain the adherend 2 with a semiconductor chip. The semiconductor chip-attached adherend 2 includes an adherend 6, a film adhesive 111 disposed on the adherend 6, and a semiconductor chip 41 disposed on the film adhesive 111. The adherend 6 includes a terminal portion. Examples of the adherend 6 include a lead frame, an interposer, a TAB film, and a semiconductor chip. When the adherend 6 is a lead frame, the terminal portion can be an inner lead.

  The temperature at which the die bonding chip 5 is pressure bonded to the adherend 6 (hereinafter, referred to as “die attach temperature”) is preferably 80 ° C. or more, more preferably 90 ° C. or more. The die attach temperature is preferably 150 ° C. or less, more preferably 130 ° C. or less.

  The film-like adhesive 111 is cured by heating the adherend 2 with a semiconductor chip under pressure. Thereby, the semiconductor chip 41 is fixed to the adherend 6. By curing the film-like adhesive 111 under pressure, it is possible to eliminate the voids existing between the film-like adhesive 111 and the adherend 6, and the film-like adhesive 111 is able to adhere to the adherend 6. The contact area can be secured.

As a method of heating under pressure, for example, a method of heating the adherend 2 with a semiconductor chip disposed in a chamber filled with an inert gas can be mentioned. The pressure of the pressurized atmosphere is preferably 0.5 kg / cm ² (4.9 × 10 ⁻² MPa) or more, more preferably 1 kg / cm ² (9.8 × 10 ⁻² MPa) or more, further preferably 5 kg / Cm ² (4.9 × 10 ⁻¹ MPa) or more. The void which exists between the film adhesive 111 and the to-be-adhered body 6 as it is 0.5 kg / cm < ² > or more can be eliminated easily. The pressure of the pressurized atmosphere is preferably 20kg ^/ cm 2 (1.96MPa), more preferably 18kg ^/ cm 2 (1.77MPa) or less, more preferably not more than 15kg ^/ cm 2 (1.47MPa). The protrusion of the film adhesive 111 by excessive pressure can be suppressed as it is 20 kg / cm < ² > or less.

  The heating temperature is preferably 80 ° C. or more, more preferably 120 ° C. or more, still more preferably 150 ° C. or more, particularly preferably 170 ° C. or more. The film adhesive 111 can have an appropriate hardness at 80 ° C. or higher, and voids can be effectively eliminated by pressure curing. The heating temperature is preferably 260 ° C. or less, more preferably 200 ° C. or less, more preferably 180 ° C. or less. The decomposition of the film adhesive 111 can be prevented as the temperature is 260 ° C. or less.

  The heating time is preferably 0.1 hours or more, more preferably 0.2 hours or more. The heating time is preferably 24 hours or less, more preferably 3 hours or less, still more preferably 1 hour or less, and particularly preferably 30 minutes or less.

  As shown in FIG. 6, a wire bonding step of electrically connecting the electrode pad of the semiconductor chip 41 and the terminal portion of the adherend 6 with the bonding wire 7 is performed. The material of the bonding wire 7 may, for example, be copper.

  The wire bonding step includes a step of bonding one end of the bonding wire 7 and the electrode pad of the semiconductor chip 41, and a step of bonding the other end of the bonding wire 7 and the terminal portion of the adherend 6.

  After performing the wire bonding step, a sealing step of sealing the semiconductor chip 41 with the sealing resin 8 is performed. This process is performed to protect the semiconductor chip 41 and the bonding wire 7 mounted on the adherend 6. This process is performed by molding a sealing resin with a mold. For example, an epoxy resin is used as the sealing resin 8. The heating temperature at the time of resin sealing is preferably 165 ° C. or more, more preferably 170 ° C. or more, and the heating temperature is preferably 185 ° C. or less, more preferably 180 ° C. or less.

  If necessary, heating may be further performed after sealing (post-curing step). Thereby, the sealing resin 8 which is insufficiently cured in the sealing step can be completely cured. The heating temperature can be set appropriately.

  The semiconductor device obtained by the above method includes the adherend 6, the adhesive layer disposed on the adherend 6, and the semiconductor chip 41 disposed on the adhesive layer. The adhesive layer is formed by curing the film adhesive 111. The semiconductor device further includes a sealing resin 8 covering the semiconductor chip 41.

  As described above, in the method of manufacturing the semiconductor device, the step of preparing the dicing die bond film 1, the step of pressure bonding the semiconductor wafer 4 to the adhesive film 11 of the dicing sheet integrated adhesive film 71, and the semiconductor wafer 4 to the adhesive film 11. After the step of pressure bonding, a step of forming the die bonding chip 5 by die division and a step of pressure bonding the die bonding chip 5 to the adherend 6 are included. In the method of manufacturing a semiconductor device, the step of bonding one end of the bonding wire 7 to the electrode pad of the semiconductor chip 41 after the step of pressure bonding the die bonding chip 5 to the adherend 6, the other end of the bonding wire 7 and the adherend The method further includes the step of bonding the six terminal portions. The method of manufacturing the semiconductor device further includes the step of sealing the semiconductor chip 41 with the sealing resin 8.

  The step of pressing the semiconductor wafer 4 to the adhesive film 11 includes the step of peeling the dicing sheet-integrated adhesive film 71 from the cover film 13.

(Modification 1)
The contact portion 122A of the adhesive layer 122 has the property of being cured by radiation. The peripheral portion 122B of the adhesive layer 122 also has the property of being cured by radiation. In the method of manufacturing a semiconductor device, the die bonding chip 5 is formed, the adhesive layer 122 is irradiated with ultraviolet light, and the die bonding chip 5 is picked up. As a result, the adhesive force of the pressure-sensitive adhesive layer 122 to the die bonding chip 5 is reduced, so that the die bonding chip 5 can be easily picked up.

(Modification 2)
The contact portion 122A of the pressure-sensitive adhesive layer 122 is cured by radiation. The peripheral portion 122B of the adhesive layer 122 is also cured by radiation.

(Modification 3)
The adhesive film 11 has a multi-layer shape including a first layer and a second layer disposed on the first layer.

(Modification 4)
As shown in FIG. 7, the entire adhesive surface of the dicing sheet 12 is in contact with the adhesive film 11. The pressure-sensitive adhesive layer 122 preferably has a property of being cured by radiation. In the method of manufacturing a semiconductor device, the die bonding chip 5 is formed, the adhesive layer 122 is irradiated with ultraviolet light, and the die bonding chip 5 is picked up. As a result, the adhesive force of the pressure-sensitive adhesive layer 122 to the die bonding chip 5 is reduced, so that the die bonding chip 5 can be easily picked up.

(Modification 5)
The base material layer 121 has a single layer shape.

(Modification 6)
The step of forming the die bonding chip 5 includes the step of dividing the semiconductor wafer 4 disposed on the dicing sheet integrated adhesive film 71 by expanding. For example, the step of forming the die bonding chip 5 includes the step of forming a fragile layer inside the semiconductor wafer 4 by irradiating the semiconductor wafer 4 disposed on the dicing sheet integrated adhesive film 71 with a laser beam. . At this time, the step of forming the die bonding chip 5 further includes the step of expanding after the step of forming the fragile layer. The adhesive film 11 and the semiconductor wafer 4 are simultaneously divided by expanding.

(Modification 7)
As shown in FIG. 8, in the method of manufacturing the semiconductor device, the die bonding chip is formed by die division after the step of pressing the semiconductor wafer 4 to the adhesive film 11 and the step of pressing the semiconductor wafer 4 to the adhesive film 11. 5 includes the steps of forming 5 and pressing the die bonding chip 5 onto the adherend 61. Specifically, the step of pressing the die bonding chip 5 to the adherend 61 is a step of pressing the die bonding chip 5 to the semiconductor chip 641 of the adherend 61. The adherend 61 includes a substrate 606, a semiconductor chip 641, and a bonding wire 607 connecting the semiconductor chip 641 and the substrate 606. More specifically, the adherend 61 includes a substrate 606, an adhesive layer 611 disposed on the substrate 606, a semiconductor chip 641 disposed on the adhesive layer 611, and a bonding wire 607 connecting the semiconductor chip 641 to the substrate 606. including. The bonding wire 607 has a portion embedded in the film adhesive 111.

(Modification 8)
As shown in FIG. 9, the step of pressing the die bonding chip 5 onto the adherend 61 is a step of pressing the die bonding chip 5 onto the substrate 606 of the adherend 61. The bonding wire 607 includes both ends buried in the film adhesive 111.

(Other modifications)
Modifications 1 to 8 and the like can be arbitrarily combined.

  Hereinafter, the present invention will be described in detail using examples, but the present invention is not limited to the following examples as long as the gist of the present invention is not exceeded.

[1. Production of dicing sheet integrated adhesive film]
Dicing sheet integrated adhesive films A to E were produced. As shown in FIG. 10, the dicing sheet integrated adhesive films A to E have the dicing sheet 9 and the adhesive film 3 disposed on the dicing sheet 9. The dicing sheet 9 has a base 91 and an adhesive layer 92 disposed on the base 91. The base 91 includes a first base 911 and a second base 912 disposed on the first base 911. The second substrate 912 has a second surface 912 b. Adhesive film A has the 2nd principal surface 3b.

(1) Production of Adhesive Film The components used to produce the adhesive film will be described.
Acrylic resin: Teisan resin WS023-EK30 (acrylic acid ester copolymer having a hydroxyl group and a carboxy group, Mw: 500,000, glass transition temperature: -10 ° C) manufactured by Nagase ChemteX Co., Ltd.
Epoxy resin 1: jER1001 (solid epoxy resin, epoxy equivalent 450 g / eq. To 500 g / eq.) Manufactured by Mitsubishi Chemical Corporation
Epoxy resin 2: jER 828 (liquid epoxy resin, epoxy equivalent 180 g / eq.) Manufactured by Mitsubishi Chemical Corporation
Phenolic resin 1: MEH-7851 (phenol resin, hydroxyl equivalent 201 to 220 g / eq.) Manufactured by Meiwa Kasei Co., Ltd.
Spherical silica: SO-25R (a spherical silica having an average particle diameter of 0.5 μm) manufactured by Admatex
Conductive polymer: WED-S manufactured by Soken Chemical Co., Ltd.

  Each component was dissolved in methyl ethyl ketone according to the compounding ratio described in Table 1 to prepare an adhesive composition solution having a solid content concentration of 20% by weight. The adhesive composition solution was applied onto a 50 μm-thick separator (silicone release-treated PET film) and dried in an oven at 130 ° C. for 2 minutes to produce adhesive films A to C with a thickness of 20 μm.

(2) Preparation of adhesive layer Next, 100 parts of 2-ethylhexyl acrylate (hereinafter referred to as "2EHA"), acrylic acid-in a reaction vessel equipped with a cooling pipe, a nitrogen introducing pipe, a thermometer and a stirrer. Add 10 parts of 2-hydroxyethyl (hereinafter referred to as "HEA"), 0.3 parts of benzoyl peroxide and 80 parts of toluene, and perform polymerization treatment at 60 ° C for 8 hours in a nitrogen stream to obtain acrylic polymer A Obtained. Five parts of 2-methacryloyloxyethyl isocyanate (hereinafter referred to as "MOI") is added to this acrylic polymer A, and subjected to addition reaction in an air stream at 50 ° C for 50 hours to obtain an acrylic polymer A '. The

  Next, 5 parts of polyisocyanate compound (trade name "Coronate L", manufactured by Nippon Polyurethane Industry Co., Ltd.) and 100 parts of acrylic polymer A ', and photopolymerization initiator (trade name "IRGACURE 184", Ciba Special 5 parts of Tea Chemicals Inc. were added, and the adhesive solution was produced. The pressure-sensitive adhesive solution was applied onto the silicone-treated side of a PET release liner, and heat-dried at 120 ° C. for 2 minutes to form a pressure-sensitive adhesive layer with a thickness of 30 μm.

(3) Preparation of Dicing Sheet-Integrated Adhesive Film A in Example 1 The first substrate 911 is a 50 μm thick polypropylene substrate. The second base material 912 is a base material containing 20 parts by weight of WED-S manufactured by Soken Chemical & Engineering Co., based on 100 parts by weight of polyethylene. The thickness of the second substrate 912 is 30 μm.

The pressure-sensitive adhesive layer and the first base material 911 were attached to each other and stored at 23 ° C. for 72 hours. The dicing sheet 9 is irradiated with ultraviolet light of 500 mJ / cm ² onto the “area where the semiconductor wafer is mounted on the adhesive layer” through the base 91 using an ultraviolet irradiation apparatus (UM-810 manufactured by Nitto Seiki Co., Ltd.). Formed.

  By bonding the adhesive film A and the dicing sheet 9 using a hand roller, a dicing sheet integrated adhesive film A was produced.

(4) Preparation of Dicing Sheet-Integrated Adhesive Film B in Example 2 The first base material 911 is a 80 μm thick polypropylene base material. The second substrate 912 is a substrate containing 20 parts by weight of PA-200 (conductive polymer) manufactured by T & K TOKA relative to 100 parts by weight of the ethylene-vinyl acetate copolymer. The thickness of the second substrate 912 is 10 μm.

The pressure-sensitive adhesive layer and the first base material 911 were attached to each other and stored at 23 ° C. for 72 hours. The dicing sheet 9 is irradiated with ultraviolet light of 500 mJ / cm ² onto the “area where the semiconductor wafer is mounted on the adhesive layer” through the base 91 using an ultraviolet irradiation apparatus (UM-810 manufactured by Nitto Seiki Co., Ltd.). Formed.

  By bonding the adhesive film B and the dicing sheet 9 using a hand roller, a dicing sheet integrated adhesive film B was produced.

  (5) Production of dicing sheet integrated adhesive film C in Example 3

  The first base 911 is a base made of an ethylene-vinyl acetate copolymer having a thickness of 50 μm. The second base material 912 is a base material containing 30 parts by weight of PA-200 manufactured by T & K TOKA relative to 100 parts by weight of polyethylene. The thickness of the second substrate 912 is 30 μm.

The pressure-sensitive adhesive layer and the first base material 911 were attached to each other and stored at 23 ° C. for 72 hours. The dicing sheet 9 is irradiated with ultraviolet light of 500 mJ / cm ² onto the “area where the semiconductor wafer is mounted on the adhesive layer” through the base 91 using an ultraviolet irradiation apparatus (UM-810 manufactured by Nitto Seiki Co., Ltd.). Formed.

  By bonding the adhesive film A and the dicing sheet 9 using a hand roller, a dicing sheet integrated adhesive film C was produced.

(6) Production of Dicing Sheet-Integrated Adhesive Film D in Comparative Example 1 The first substrate 911 is a 50 μm-thick polypropylene substrate. The second substrate 912 is a 30 μm-thick polyethylene substrate.

The pressure-sensitive adhesive layer and the first base material 911 were attached to each other and stored at 23 ° C. for 72 hours. The dicing sheet 9 is irradiated with ultraviolet light of 500 mJ / cm ² onto the “area where the semiconductor wafer is mounted on the adhesive layer” through the base 91 using an ultraviolet irradiation apparatus (UM-810 manufactured by Nitto Seiki Co., Ltd.). Formed.

  By bonding the adhesive film C and the dicing sheet 9 using a hand roller, a dicing sheet integrated adhesive film D was produced.

(7) Preparation of Dicing Sheet-Integrated Adhesive Film E in Comparative Example 2 The first base material 911 is a base material containing 20 parts by weight of WED-S manufactured by Soken Chemical & Co., based on 100 parts by weight of polyethylene. The thickness of the first base material 911 is 50 μm. The second substrate 912 is a 30 μm thick polypropylene substrate.

The pressure-sensitive adhesive layer and the first base material 911 were attached to each other and stored at 23 ° C. for 72 hours. The dicing sheet 9 is irradiated with ultraviolet light of 500 mJ / cm ² onto the “area where the semiconductor wafer is mounted on the adhesive layer” through the base 91 using an ultraviolet irradiation apparatus (UM-810 manufactured by Nitto Seiki Co., Ltd.). Formed.

  By bonding the adhesive film A and the dicing sheet 9 using a hand roller, a dicing sheet integrated adhesive film E was produced.

[2. Evaluation]
The following evaluation was performed about dicing sheet integrated adhesive film AE. The results are shown in Table 2.

(1) Surface Resistance Value of Second Surface 912b A sample box TR-42 for measuring ultrahigh resistance of an Himeg ohm meter TR-8601 manufactured by Advantest Corporation was used. After leaving the dicing sheet-integrated adhesive film standing for 2 hours in an atmosphere of 23 ± 2 ° C. and 50 ± 5%, an applied voltage of 500 V is applied to the second surface 912b under the same environment, and the numerical value one minute after the application start I read it. The surface resistance value was determined from the value obtained by dividing the applied voltage by the surface current.

(2) Elongation at break: A strip-like sample having an initial length of 120 mm and a width of 10 mm is cut out from dicing sheet 9 and subjected to a tensile test at a distance between chucks of 50 mm and a tensile speed of 300 mm / min mm) was measured. An autograph AG-IS manufactured by Shimadzu Corporation was used as a tensile tester, and a PFG-50NA manufactured by Shimadzu Corporation was used as a load cell.

(3) Cover Film Peeling Test 200 pieces of dicing sheet integrated adhesive film were attached to a cover film, wound in a roll, and a wafer bonding test was performed using a wafer mounting apparatus MA-3000III (manufactured by Nitto Seiki Co., Ltd.). The cover film is peeled off from 10 dicing sheet integrated adhesive films, and the case where the cover film can be peeled off in all 10 dicing sheet integrated adhesive films is judged as ○, and the case where one or more sheets can not be peeled is judged as x did.

(4) Scattering after dicing A mirror sheet with a thickness of 12 inches and 500 μm was bonded to a dicing sheet-integrated adhesive film at a speed of 10 mm / sec at 60 ° C using a wafer mounter (MA-3000III, manufactured by Nitto Seiki) . Thereafter, dicing was performed to a chip size of 10 mm × 10 mm by using a dicing apparatus (DFD6361, manufactured by Disco) (single cut, blade height 90 μm, speed 50 mm / sec). It was analyzed by SEM whether the conductive component was attached on the chip. The case where the conductive component did not adhere on the chip was judged as ○, and the case where the conductive component adhered on the chip was judged as x.

(5) Surface resistance value of 2nd principal surface 3b The sample box TR-42 for ultrahigh resistance measurement of Himeg ohm meter TR-8601 by Advantest Corporation was used. After leaving the dicing sheet-integrated adhesive film standing for 2 hours in an atmosphere of 23 ± 2 ° C. and 50 ± 5%, an applied voltage of 500 V is applied to the second main surface 3b under the same environment, and the numerical value one minute after the application start Was read. The surface resistance value was determined from the value obtained by dividing the applied voltage by the surface current.

(6) Tack strength A probe with a diameter of 5.0 mm was pressed against the adhesive film at 25 ° C. under a pressure of 100 gf for 1 second, and the load when the probe separated from the adhesive film was measured at a test speed of 120 mm / min. .

DESCRIPTION OF SYMBOLS 1 dicing die bond film 11 adhesive film 11a 1st main surface 11b 2nd main surface 12 dicing sheet 13 cover film 71 dicing sheet integrated adhesive film 121 base material layer 121a 1st surface 121b 2nd surface 1211 1st base material layer 1212 2 Base Material Layer 122 Adhesive Layer 122A Contact Area 122B Peripheral Area

4 semiconductor wafer 5 chip for die bonding 41 semiconductor chip 111 film adhesive 6 adherend 7 bonding wire 8 sealing resin

61 adherend 606 substrate 607 bonding wire 611 adhesive layer 641 semiconductor chip

Claims (9)

Rolled dicing die bond film, which
With cover film,
And Dicing sheet integrated adhesive film disposed on the cover film,
The dicing sheet integrated adhesive film is
A first sheet and a dicing sheet including a base material layer whose both surfaces are defined by a second surface opposite to the first surface, and a pressure-sensitive adhesive layer in contact with the first surface, and a first main material in contact with the pressure-sensitive adhesive layer And an adhesive film defined on both sides by a second main surface opposite to the first surface and the first main surface,
The surface resistance of the second surface is 1.0 × 10 ¹¹ Ω / sq. Hereinafter, the surface resistivity of the second main surface is 1.0 × 10 ¹² Ω / sq. 1.0 × 10 ¹⁷ Ω / sq. Dicing die bond film which is below . The base layer includes a first base layer having the first side and a second base layer having the second side,
The dicing die bond film according to claim 1, wherein the second substrate layer contains a conductive component.   The dicing die bond film according to claim 2 whose thickness of said 2nd substrate layer is 1 micrometer-30 micrometers.   The dicing die-bonding film according to claim 2 or 3, wherein the conductive component is an organic conductive component.   The dicing die-bonding film according to any one of claims 2 to 4, wherein the second base material layer further contains one or more resins selected from the group consisting of polyethylene, polypropylene, and ethylene vinyl acetate copolymer.   The dicing die bond film according to any one of claims 1 to 5, wherein the breaking elongation of the dicing sheet is 500% or more. The adhesive film contains an epoxy resin or a phenol resin and an acrylic resin,
The dicing die bond film according to any one of claims 1 to 6, wherein a tack strength at 25 ° C in the adhesive film is 0.2 N or more and 3.0 N or less. The cover film is a polyethylene terephthalate film,
The thickness of the said cover film is 20 micrometers-75 micrometers, The dicing die-bonding film in any one of Claims 1-7. Preparing a dicing die bond film according to any one of claims 1 to 8.
Bonding a semiconductor wafer to the adhesive film of the dicing sheet-integrated adhesive film;
Forming a die bonding chip including a semiconductor chip and a film adhesive disposed on the semiconductor chip by die separation after the step of pressure bonding the semiconductor wafer to the adhesive film;
And c) bonding the die bonding chip to an adherend.
The method for manufacturing a semiconductor device, the step of pressing the semiconductor wafer onto the adhesive film includes the step of peeling the dicing sheet-integrated adhesive film from the cover film.

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