JP6551104B2 - Electrostatic chuck device and method of manufacturing the same - Google Patents

Description

  The present invention relates to an electrostatic chuck device.

In the semiconductor manufacturing process, when processing a wafer, an electrostatic chuck device is used as a device for simply mounting and fixing the wafer on a sample stage and maintaining the wafer at a desired temperature.
With the high integration and high performance of semiconductor devices, the processing of wafers is being miniaturized, and plasma etching technology which has high production efficiency and can be processed on a large area is often used. When the wafer fixed to the electrostatic chuck device is irradiated with plasma, the surface temperature of the wafer rises. Therefore, in order to suppress the rise in the surface temperature, a cooling medium such as water is circulated through the temperature adjustment base portion of the electrostatic chuck device to cool the wafer from the lower side. Due to variations in the heat input in the wafer surface, a temperature distribution is generated in the wafer surface. For example, the temperature tends to be higher at the center of the wafer and lower at the edge.

Then, the electrostatic chuck apparatus with a heater function which attached the heater member between the electrostatic chuck part and the base part for temperature control is proposed (patent document 1).
The electrostatic chuck device with a heater function can locally create a temperature distribution in the wafer, and therefore, the in-plane temperature distribution of the wafer is set on the wafer by setting it in accordance with the film deposition rate and the plasma etching rate. It is possible to efficiently perform local film formation and local plasma etching such as patterning of

As a method of attaching the heater to the electrostatic chuck device, there is a method of incorporating the heater in the ceramic electrostatic chuck, and a heater material is applied by screen printing on the back side of the suction surface of the electrostatic chuck, ie the back side of the ceramic plate. There is a method of attaching a heater by applying in a predetermined pattern and heat curing, or a method of attaching a heater by sticking a metal foil or a sheet-like conductive material on the back surface of the ceramic plate. .
Then, the electrostatic chuck unit with the built-in heater or the heater attached thereto and the temperature adjustment base unit are bonded and integrated using an organic adhesive to obtain an electrostatic chuck apparatus with a heater function.

JP 2008-300491 A

  However, the electrostatic chuck device manufactured as described above maintains the target temperature uniformity immediately after manufacturing, but is used at a high temperature of 80 ° C. or higher for a long period of time equivalent to 1000 hours. Due to the deterioration of the cured organic adhesive (adhesive layer) and the accompanying stress increase, the adhesive layer is broken or peeled off, resulting in a partial difference in the thermal resistance of the electrostatic chuck and temperature changes. In some cases, deformation of the sample adsorption surface may occur.

  The present invention has been made to solve the above-described problems, and provides an electrostatic chuck device that is excellent in in-plane temperature uniformity without changing the shape of the electrostatic chuck even when used at a high temperature for a long time. The purpose is to achieve this purpose.

  When manufacturing the electrostatic chuck device, the present inventors can suppress fluctuations in the Young's modulus of the adhesive layer when used for a long time at a high temperature by applying a predetermined heat treatment to the adhesive layer. The present invention has been found to be effective in reducing deformation of a part and improving in-plane temperature uniformity on a mounting surface.

That is, the present invention provides the following electrostatic chuck device and manufacturing method thereof.
[1] The main surface is a mounting surface on which a plate-shaped sample is to be mounted, and an electrostatic chuck portion incorporating an internal electrode for electrostatic adsorption, an adhesive layer, and the electrostatic chuck portion are adjusted to a desired temperature. And a temperature adjusting base portion in this order,
When the adhesive layer is heated at 160 ° C. for 100 hours, the Young's modulus E1 (20) at 20 ° C. before the heating of the adhesive layer and the Young's modulus E2 (20 at 20 ° C. after the heating) ) Satisfies the following expression (1).
| (E2 (20) −E1 (20)) / E1 (20) | ≦ 2.0 (1)
[2] The Young's modulus E1 (180) at 180 ° C. before the heating and the Young's modulus E2 (180) at 180 ° C. after the heating of the adhesive layer satisfy the following equation (2): Electrostatic chuck device.
| (E2 (180) −E1 (180)) / E1 (180) | ≦ 2.0 (2)
[3] The electrostatic chuck device according to [1] or [2], wherein Young's moduli E2 (20) and E2 (180) at 20 ° C. and 180 ° C. after the heating of the adhesive layer are both 20 MPa or less. .
[4] The electrostatic chuck according to any one of [1] to [3], wherein the adhesive layer is formed using an adhesive, and the adhesive contains one or more selected from silicone resins and fluorine resins. apparatus. [5] The electrostatic chuck device according to any one of [1] to [4], wherein the adhesive layer contains a filler having an average particle diameter of 1 μm to 10 μm.
[6] The electrostatic chuck device according to [5], wherein the content of the filler in the adhesive is 5% by volume to 30% by volume based on the total volume of the adhesive.
[7] The electrostatic chuck device according to any one of [1] to [6], wherein the adhesive contains a silicone resin, and further contains one or more reactive diluents.
[8] The electrostatic chuck device according to [7], wherein the content of the reactive diluent is 5% by volume or more and 30% by volume or less based on the total volume of the adhesive.
[9] An electrostatic chuck portion having one main surface as a mounting surface on which a plate-shaped sample is to be mounted and an internal electrode for electrostatic adsorption built in, and temperature control for adjusting the electrostatic chuck portion to a desired temperature Bonding the base part via an adhesive;
Heat treating an adhesive layer formed between the electrostatic chuck portion and the temperature control base portion with the adhesive at a temperature of 100 ° C. or more and 200 ° C. or less for 80 hours or more.

  According to the present invention, it is possible to provide an electrostatic chuck device which has no shape change in the electrostatic chuck portion even when used for a long time at high temperature and is excellent in in-plane temperature uniformity.

It is sectional drawing which shows an example of the electrostatic chuck apparatus of this invention. It is a top view which shows an example of the heater pattern of the heater element of the electrostatic chuck apparatus of this invention. FIG. 7 is a view showing an in-plane temperature distribution of the silicon wafer before and after the endurance test of the electrostatic chuck device of Example 1. FIG. 5 is a view showing the surface shape of the silicon wafer before and after the durability test of the electrostatic chuck device of Example 1. It is a figure which shows in-plane temperature distribution of the silicon wafer before and behind the endurance test of the electrostatic chuck apparatus of the comparative example 1. FIG. It is a figure which shows the surface shape of the silicon wafer before and behind the durability test of the electrostatic chuck apparatus of the comparative example 1. FIG.

Hereinafter, the present invention will be described in detail.
<Electrostatic chuck device>
In the electrostatic chuck device of the present invention, an electrostatic chuck portion having one main surface as a mounting surface on which a plate-shaped sample is to be mounted and an internal electrode for electrostatic adsorption built therein, an adhesive layer, and the electrostatic chuck portion And in this order, the adhesive layer is heated at 160 ° C. for 100 hours at 20 ° C. before the heating of the adhesive layer. The Young's modulus E1 (20) and the Young's modulus E2 (20) at 20 ° C. after the heating satisfy the following equation (1).
| (E2 (20) -E1 (20)) / E1 (20) | ≦ 2.0 (1)
First, an electrostatic chuck device of the present invention will be described with reference to the drawings.

FIG. 1 is a sectional view showing an electrostatic chuck device according to an embodiment of the present invention.
The electrostatic chuck device 1 comprises a disc-shaped electrostatic chuck portion 2, a disc-shaped temperature control base portion 3 having a thickness for adjusting the electrostatic chuck portion 2 to a desired temperature, and The heater element 5 having a predetermined pattern provided on the lower surface (the other main surface) of the electric chuck portion 2, the insulating member 7 joined to the upper surface of the temperature control base portion 3 via the bonding layer 6, In a state where the heater element 5 on the lower surface of the electric chuck 2 and the insulating member 7 on the temperature adjustment base 3 are opposed to each other, the adhesive layer 8 is mainly composed of an adhesive for bonding and integrating them. .

  The electrostatic chuck unit 2 has a mounting plate 11 whose upper surface is a mounting surface on which a plate-shaped sample W such as a semiconductor wafer is to be mounted, and the mounting plate 11 integrated with and supporting the mounting plate 11. A support plate 12, an insulating material layer 14 for insulating the periphery of the electrostatic adsorption internal electrode 13 and the electrostatic adsorption internal electrode 13 provided between the mounting plate 11 and the support plate 12, and the support plate 12 And a power supply terminal 15 for applying a DC voltage to the internal electrode 13 for electrostatic adsorption.

The mounting plate 11 and the support plate 12 are disk-like ones having the same shape of the superposed surfaces, and are aluminum oxide-silicon carbide (Al ₂ O ₃ -SiC) composite sintered body, aluminum oxide (Al) ₂ O ₃ ) has mechanical strength such as sintered body, aluminum nitride (AlN) sintered body, yttrium oxide (Y ₂ O ₃ ) sintered body, etc. and has durability against corrosive gas and its plasma It consists of an insulating ceramic sintered body.
A plurality of protrusions 16 having a diameter smaller than the thickness of the plate-like sample are formed on the placement surface of the placement plate 11, and the protrusions 16 support the plate-like sample W.

The internal electrode 13 for electrostatic adsorption is used as an electrode for an electrostatic chuck for generating electric charge and fixing a plate-like sample by electrostatic adsorption force, and its shape and size are appropriately determined depending on its use. Adjusted.
The internal electrode 13 for electrostatic adsorption is made of aluminum oxide-tantalum carbide (Al ₂ O ₃ -Ta ₄ C ₅ ) conductive composite sintered body, aluminum oxide-tungsten (Al ₂ O ₃ -W) conductive composite sintering body, aluminum oxide - silicon carbide _{(Al 2} O 3 -SiC) conductive composite sintered body, an aluminum nitride - tungsten (AlN-W) conductive composite sintered body, an aluminum nitride - tantalum (AlN-Ta) conductive composite With sintered ceramics, conductive ceramics such as yttrium oxide-molybdenum (Y ₂ O ₃ -Mo) conductive composite sintered bodies, or high melting point metals such as tungsten (W), tantalum (Ta), and molybdenum (Mo) It is formed.

  The insulating material layer 14 encloses the internal electrode 13 for electrostatic adsorption to protect the internal electrode 13 for electrostatic adsorption from the corrosive gas and its plasma, and at the boundary between the mounting plate 11 and the support plate 12, ie, The outer peripheral region other than the internal electrode 13 for electrostatic adsorption is integrally joined, and the same composition or main component as the material constituting the mounting plate 11 and the supporting plate 12 is formed of the same insulating material.

The feed terminal 15 is a rod-like member provided to apply a DC voltage to the electrostatic adsorption internal electrode 13, and the material of the feed terminal 15 is a conductive material having excellent heat resistance. Although not particularly limited, it is preferable that the thermal expansion coefficient be close to the thermal expansion coefficient of the electrostatic adsorption internal electrode 13 and the support plate 12, for example, the conductive material constituting the electrostatic adsorption internal electrode 13 Ceramics or metal materials such as tungsten (W), tantalum (Ta), molybdenum (Mo), niobium (Nb), Kovar alloy, etc. are preferably used.
The power supply terminal 15 is insulated from the temperature control base portion 3 by an insulator 17 having an insulating property. Then, the power supply terminal 15 is joined and integrated to the support plate 12, and the mounting plate 11 and the support plate 12 are joined and integrated by the internal electrode 13 for electrostatic adsorption and the insulating material layer 14 to form electrostatics. The chuck portion 2 is configured.

The temperature adjusting base portion 3 is for adjusting the electrostatic chuck portion 2 to a desired temperature, and has a thick disk shape. As the temperature control base portion 3, for example, a water-cooled base or the like in which a flow path (not shown) for circulating water is formed is preferable.
The material constituting the temperature adjustment base portion 3 is not particularly limited as long as it is a metal excellent in thermal conductivity, conductivity, or processability, or a composite material containing these metals, for example, aluminum (Al), Aluminum alloy, copper (Cu), copper alloy, stainless steel (SUS) and the like are preferably used. It is preferable that at least the surface of the temperature adjusting base portion 3 exposed to the plasma is anodized or an insulating film such as alumina is formed.

  The heater element 5 is disposed on the lower surface of the support plate 12 via the bonding portion 4. FIG. 2 shows an example of the heater pattern of the heat element. As shown in FIG. 2, two heaters independent from each other, that is, the inner heater 5a formed at the center and the outer periphery of the inner heater 5a. 1 is connected to each of the connection positions 21 of the inner heater 5a and the outer heater 5b with the feeding terminals at both ends of each of the inner heater 5a and the outer heater 5b. The power supply terminal 22 is insulated from the temperature control base portion 3 by an insulator 23 having an insulating property.

Each of the inner heater 5a and the outer heater 5b has a pattern in which a narrow band-shaped metal material meanders is repeatedly arranged around the axis, and adjacent patterns are connected to each other. One continuous belt-like heater pattern is formed.
In the heater element 5, by controlling the inner heater 5a and the outer heater 5b independently, the in-plane temperature distribution of the plate-shaped sample W fixed to the mounting surface of the mounting plate 11 by electrostatic adsorption is accurate. It is supposed to control well.

The heater pattern of the heater element 5 may be composed of two or more heater patterns independent of each other, or may be composed of one heater pattern, but two or more heater elements 5 are mutually independent These heater patterns are preferable because the temperature of the plate-like sample W being processed can be freely controlled by individually controlling these mutually independent heater patterns. In the present invention, the heat element 5 as a heating member may not be disposed.
The heater element 5 is, for example, a nonmagnetic metal thin plate having a constant thickness of 0.2 mm or less, preferably 0.1 mm or less, for example, a titanium (Ti) thin plate, a tungsten (W) thin plate, a molybdenum (Mo) thin plate Is formed by etching into a desired heater pattern by photolithography.

The bonding layer 6 is a sheet-like or film-like adhesive resin having heat resistance and insulation such as polyimide resin, silicone resin, epoxy resin, etc. The thickness is preferably 5 μm to 100 μm, and more preferably 10 μm to 50 μm It is.
The insulating member 7 is a film-like or sheet-like resin having insulation properties and voltage resistance, such as polyimide resin, silicone resin, epoxy resin, etc. The variation in thickness of the insulating member 7 is within 10 μm. preferable.

The adhesive layer 8 is a state in which the heater element 5 adhered to the lower surface of the electrostatic chuck portion 2 and the insulating member 7 adhered to the temperature adjustment base portion 3 via the bonding layer 6 are opposed to each other. The adhesive layer 8 preferably has a thickness of 50 μm or more and 500 μm or less because the adhesive layer 8 has a thermal stress relieving action.
The reason why the thickness of the adhesive layer 8 is in the above range is that when the thickness of the adhesive layer 8 is less than 50 μm, the thermal conductivity between the electrostatic chuck portion 2 and the temperature adjusting base portion 3 becomes good. The reason is that thermal stress relaxation becomes insufficient and cracks and cracks easily occur. On the other hand, when the thickness of the adhesive layer 8 exceeds 500 μm, the heat between the electrostatic chuck portion 2 and the temperature adjustment base portion 3 This is because sufficient conductivity cannot be ensured.

In the present invention, when the adhesive layer 8 is heated at 160 ° C. for 100 hours, Young's modulus E1 (20) at 20 ° C. before the heating of the adhesive layer 8 and 20 ° C. after the heating The Young's modulus E2 (20) in the case must satisfy the following formula (1).
| (E2 (20) −E1 (20)) / E1 (20) | ≦ 2.0 (1)
If the left side of the above equation (1) exceeds 2.0, the deformation of the electrostatic chuck 2 becomes large when used for a long time at a high temperature of 80 ° C. or more, and the uniformity of the in-plane temperature on the mounting surface is ensured Can not do it. The left side of the formula (1) is preferably 1.5 or less, more preferably 0.70 or less, and further preferably 0.3 or less. Note that the lower limit of the left side of Equation (1) is ideally 0, but in practice it is about 0.01.

Furthermore, in the present invention, when the adhesive layer 8 is heated at 160 ° C. for 100 hours, the Young's modulus E1 (180) at 180 ° C. before the heating of the adhesive layer 8 and the heating after the heating It is desirable that the Young's modulus E2 (180) at 180 ° C. also satisfies the following formula (2).
| (E2 (180) -E1 (180)) / E1 (180) | ≦ 2.0 (2)
If the left side of the above equation (2) is within 2.0, deformation of the electrostatic chuck portion 2 can be reduced when used for a long time at a high temperature of 80 ° C. or higher, and the in-plane in the mounting surface The uniformity of temperature can be further increased. The left side of the formula (2) is preferably 0.8 or less, and more preferably 0.4 or less. Note that the lower limit of the left side of equation (2) is ideally ideally 0, but is practically about 0.01.

The Young's modulus E2 (20) and E2 (180) at 20 ° C. and 180 ° C. after the heating of the adhesive layer 8 are preferably both 20 MPa or less. If these Young's moduli are 20 MPa or less even after long-term use at a high temperature, the deformation of the electrostatic chuck portion 2 hardly affects the uniformity of the in-plane temperature on the mounting surface. The Young's modulus after heating is more preferably 18 MPa or less, and further preferably 15 MPa or less.
The method for measuring the Young's modulus will be described later.

The adhesive layer 8 is formed using an adhesive. Although the resin used for the adhesive is not particularly limited, the silicone resin containing one or more selected from silicone resins and fluorine resins may be used for the temperature of the electrostatic chuck portion 2 and the temperature adjusting base portion 3. From the viewpoint of alleviating the difference in thermal expansion due to the difference, silicone resins having one-component and two-component condensation type or addition type reaction mechanism are preferable, and those generally represented by the following general formula (1) are used ing.

In the general formula (1), R ^{1 to} R ⁶ each independently represent an alkyl group of 1 to 5 carbon atoms, an alkenyl group of 2 to 5 carbon atoms, or an aryl group of 6 to 12 carbon atoms; A part or all of the hydrogen atoms of the alkenyl group and aryl group may be substituted with a fluorine atom. Moreover, m is an integer of 1-100.

The alkyl group having 1 to 5 carbon atoms may be linear or branched, and examples thereof include a methyl group, an ethyl group, an n-propyl isopropyl group, an n-butyl group and a t-butyl group, An n-pentyl group and the like can be mentioned. The carbon number of each of R ^{1 to} R ⁶ is preferably independently 1 to 3, more preferably 1 to 2, and still more preferably 1.
Examples of the alkenyl group having 2 to 5 carbon atoms include vinyl group, 1-propenyl group, allyl group, 1-butenyl group, 2-butenyl group, pentenyl group and the like.
As a C6-C12 aryl group, a phenyl group, a naphthyl group, etc. are represented, and you may have substituents, such as a C1-C5 alkyl group, a halogen atom, etc. further.

A part or all of the hydrogen atoms of the alkyl group, alkenyl group and aryl group in the general formula (1) may be substituted with fluorine atoms. For example, when a propyl group is mentioned as an example, it is a trifluoropropyl group (-CH ₂ CH ₂ CF ₃ ) in which the hydrogen atom of the terminal methyl group part of the propyl group (-CH ₂ CH ₂ CH ₃ ) is substituted with a fluorine atom It may be.

By using a silicone resin as the main component (70% by mass or more of the total mass of the adhesive layer), it has heat resistance up to 200 ° C., and contains other heat resistant adhesives such as epoxy resin and polyimide resin as the main components. It is preferable because it has a large elongation compared with the adhesive, can relieve the stress between the electrostatic chuck portion and the temperature control base portion, and has a high thermal conductivity.
The silicone-based resin may be a commercially available silicone adhesive (including a silicone adhesive). For example, silicone adhesives (for example, SD 4580 PSA, SD 4854 PSA, SD 4585 PSA, manufactured by Toray Dow Corning, SD 4587 L PSA, SD 4560 PSA, etc.), manufactured by Momentive, silicone adhesive (eg, XE13-B3208, TSE3212, TSE3261-G, TSE3280-G, TSE3281-G, TSE3221, TSE326, TSE326M, TSE325, etc.), Shin-Etsu Examples include silicone adhesives and silicone adhesives (for example, KE-1820, KE-1823, KE-1825, KE-1830, KE-1833, etc.).

  As such a silicone resin, a silicone resin having a thermosetting temperature of 70 ° C. to 140 ° C. is particularly preferable. When the thermosetting temperature is lower than 70 ° C., when the support plate 12 and the heater element 5 of the electrostatic chuck portion 2 are joined with the temperature adjusting base portion 3 and the insulating member 7 facing each other, It is not preferable because curing starts and the workability is poor. On the other hand, when the thermosetting temperature exceeds 140 ° C., the difference in thermal expansion between the support plate 12 and the heater element 5 of the electrostatic chuck portion 2, the temperature adjusting base portion 3 and the insulating member 7 is large, and the electrostatic chuck portion 2. The stress between the support plate 12 and the heater element 5 and the temperature adjusting base 3 and the insulating member 7 is increased, and there is a possibility that peeling may occur between them.

  Moreover, as said silicone resin, resin with a Young's modulus (initial stage) after hardening of 8 MPa or less is preferable. When the Young's modulus after curing exceeds 8 MPa, even when heat treatment is performed on the adhesive layer 8 to be described later, the support plate 12 and the temperature adjusting base are heated when the adhesive layer 8 is subjected to a heat cycle of temperature increase and decrease. The difference in thermal expansion with the portion 3 can not be absorbed, and the durability of the adhesive layer 8 may decrease, which is not preferable.

Furthermore, in the case of using a silicone resin, it is preferable to use a reactive diluent together with this. By using a reactive diluent, it is possible not only to reduce the Young's modulus of the adhesive layer after curing, but also to reduce the change in Young's modulus of the adhesive layer even when used repeatedly at high temperatures, as a result The deformation of the electrostatic chuck portion and the in-plane temperature variation of the mounting surface can be further reduced.
Reactive diluents for silicone resins, which are sold by silicone manufacturers, have reactive groups in the side chain and contain silicon. There are silane coupling agents on a monomer basis, resins and oils on polymers, and oligomers in between. Any of them may be used in the present invention, but it is particularly desirable to use a reactive diluent containing a silicone oligomer or silicone oil because the above-mentioned effects can be obtained effectively.

  Examples of reactive diluents that can be used in the present invention include those manufactured by Momentive, reactive diluents (for example, ME90, ME91, etc.), manufactured by Shin-Etsu Silicone, and alkoxysilicone oligomers (for example, KC-89S, KR-500, X -40-9227, KR-9218, X-24-9590, KR-516, etc. can be used.

The content of the reactive diluent is preferably 5% by volume or more and 30% by volume or less based on the total volume of the adhesive. By setting the content in this range, it is possible to effectively reduce the change in Young's modulus of the adhesive layer when used for a long time at high temperature, to reduce the deformation of the electrostatic chuck portion 2, and further on the mounting surface. Contributes to uniformity of in-plane temperature.
The content of the reactive diluent is more preferably 5% by volume to 25% by volume based on the total volume of the adhesive, and still more preferably 10% by volume to 20% by volume.

Further, examples of the fluorine-based resin include polytetrafluoroethylene, polyvinyl fluoride, polyvinylidene fluoride, polytetrafluoroethylene trifluoride ethylene, polytetrafluoroethylene and the like. These polymers may be homopolymers obtained by polymerizing a single monomer, or copolymers obtained by copolymerizing two or more kinds. Furthermore, these monomers and other monomers may be copolymerized.
Examples of these polymers include copolymers of tetrafluoroethylene and tetrafluoropropylene, copolymers of tetrafluoroethylene and vinylidene fluoride, copolymers of tetrafluoroethylene and ethylene, and copolymers of tetrafluoroethylene and propylene. , Copolymers of tetrafluoroethylene and vinyl ether, copolymers of tetrafluoroethylene and perfluorovinyl ether, copolymers of chlorotrifluoroethylene and vinyl ether, copolymers of chlorotrifluoroethylene and perfluorovinyl ether, etc. Can.

Further, as the fluorine-based resin, a polymer having a fluorinated polyether structure in its main chain is also suitable. The fluorinated structure is resistant to oxidation even in a high temperature environment because it increases the bonding energy between atoms of the main chain. Furthermore, it is not necessary to add plasticizers that may cause loss of flexibility in high temperature applications, as the low viscosity polyether backbone imparts sufficient flexibility to the binder. Therefore, according to the binder having a fluorinated polyether structure as the main chain, a heat-resistant heat-dissipating sheet capable of reducing the deterioration due to the oxidation of the binder caused by the use at a high temperature of 250 to 300 ° C and maintaining the flexibility is formed. can do.
The liquid fluorinated polyether preferably has a reactive functional group at the end of its main chain, and is preferably reactively cured by a curing agent or a polymerization initiator. For example, if the terminal functional group is an alkenyl group, it can be cured by a hydrosilylation reaction with a hydrosilyl group and a catalyst. If the terminal functional group is an isocyanate group, it can be cured by reaction with an amino group or a hydroxyl group. As a specific example of liquid fluorinated polyether, for example, a trade name “SIFEL (registered trademark)” series manufactured by Shin-Etsu Chemical Co., Ltd. can be mentioned.
In addition, it is preferable that the mass average molecular weights of these fluororesins are about 1000 or more and 50000 or less.

  As an adhesive agent which comprises the contact bonding layer 8, the said silicone resin and fluorine resin may be used independently, and you may use together with another polymer. When another polymer is used in combination, the ratio of the silicone resin or the fluorine resin in the present invention is preferably 50% by mass or more, and more preferably 70% by mass or more in the entire adhesive. When the ratio of the silicone resin and the fluorine resin is 50% by mass or more, the adhesive property and the deformation suppression property at the time of repeated use are excellent.

In addition, the adhesive layer 8 may be a filler made of inorganic oxide, inorganic nitride or inorganic oxynitride having an average particle diameter of 1 μm to 10 μm, for example, silicon oxide (SiO ₂ ) on the surface of aluminum nitride (AlN) particles. It is preferable that the surface covering aluminum nitride (AlN) particle | grains in which the coating layer which consists of was formed contain.
The surface-coated aluminum nitride (AlN) particles are mixed to improve the thermal conductivity of the adhesive layer, but by adjusting the mixing ratio, the Young's modulus at high temperature use of the adhesive layer 8 Can be further suppressed, and as a result, deformation of the electrostatic chuck portion 2 at the time of high temperature use can be further reduced.

In addition, since the coating layer made of silicon oxide (SiO ₂ ) is formed on the surface of the aluminum nitride (AlN) particle, the water resistance is superior to that of a simple aluminum nitride (AlN) particle without the surface coating. have. Therefore, the durability of the adhesive layer 8 mainly composed of silicone resin or fluorine resin can be secured, and as a result, the durability of the electrostatic chuck device 1 can be dramatically improved.
Furthermore, since the surface-coated aluminum nitride (AlN) particles are coated with the covering layer made of silicon oxide (SiO ₂ ) having excellent water resistance, the aluminum nitride (AlN) particles can be used. ) Is not hydrolyzed by water in the atmosphere, the heat transfer rate of aluminum nitride (AlN) is not lowered, and the durability of the adhesive layer 8 is improved. The surface-coated aluminum nitride (AlN) particles do not become a source of contamination to the plate-like sample W such as a semiconductor wafer, and can be regarded as a preferable filler also from this point.

  Further, since the surface-coated aluminum nitride (AlN) particles can obtain a strong bonded state by Si in the coating layer and an adhesive-forming resin such as a silicone-based resin, the stretchability of the adhesive layer 8 can be increased. It is possible to improve. Thereby, the thermal stress resulting from the difference between the thermal expansion coefficient of the support plate 12 of the electrostatic chuck portion 2 and the thermal expansion coefficient of the temperature adjustment base portion 3 can be alleviated, and the temperature adjustment with the electrostatic chuck portion 2 The base part 3 for use can be bonded firmly with high accuracy. Further, since the durability against the thermal cycle load in use becomes sufficient, the durability of the electrostatic chuck device 1 is improved.

The average particle diameter of the filler in the present invention is preferably 1 μm to 10 μm, and more preferably 2 μm to 5 μm.
When the average particle size of the filler particles is less than 1 μm, the contact between the particles becomes insufficient, and as a result, the heat transfer rate may be reduced, and when the particle size is too small, workability such as handling is reduced. And it is not preferable. On the other hand, when the average particle diameter exceeds 10 μm, the thickness of the adhesive layer tends to be uneven, which is not preferable.

  The content of the filler in the adhesive is preferably 5% by volume or more and 30% by volume or less based on the total volume of the adhesive. When the content of the filler is in the above-mentioned range, the thermal conductivity of the adhesive layer 8 can be increased, and at the same time, the fluctuation of Young's modulus at the time of high temperature use can be suppressed. The content of the filler in the adhesive is more preferably 10% by volume or more and 25% by volume or less, and still more preferably 15% by volume or more and 25% by volume or less.

<Method for manufacturing electrostatic chuck device>
In the method of manufacturing an electrostatic chuck device according to the present invention, an electrostatic chuck portion having one main surface as a mounting surface on which a plate-shaped sample is mounted and an internal electrode for electrostatic adsorption built therein, and the electrostatic chuck portion Bonding a temperature control base portion to a desired temperature via an adhesive, and forming an adhesive layer formed between the electrostatic chuck portion and the temperature control base portion by the adhesive at 100 ° C. or higher Heat treatment at a temperature of 200 ° C. or less for 80 hours or more.

Hereinafter, an example of the method for manufacturing the electrostatic chuck device of the present invention will be described with reference to FIG.
First, the plate-like mounting plate 11 and the support plate 12 are produced from an aluminum oxide-silicon carbide (Al ₂ O ₃ -SiC) composite sintered body or a yttrium oxide (Y ₂ O ₃ ) sintered body. In this case, a mixed powder or yttrium oxide powder containing silicon carbide powder and aluminum oxide powder is formed into a desired shape, and then, for example, at a temperature of 1400 ° C. to 2000 ° C. in a non-oxidizing atmosphere, preferably under an inert atmosphere. The mounting plate 11 and the support plate 12 can be obtained by baking for a predetermined time.

Next, a plurality of fixing holes for fitting and holding the power supply terminals 15 are formed in the support plate 12.
Subsequently, the power supply terminal 15 is manufactured to have a size and a shape that can be closely fixed to the fixing hole of the support plate 12. As a method for producing the power supply terminal 15, for example, when the power supply terminal 15 is made of a conductive composite sintered body, a method of forming a conductive ceramic powder into a desired shape and subjecting it to pressure firing may be mentioned. . At this time, as the conductive ceramic powder used for the power supply terminal 15, a conductive ceramic powder made of the same material as the internal electrode 13 for electrostatic adsorption is preferable. Moreover, when the terminal 15 for electric power feeding is made into a metal, the method etc. of forming by metal processing methods, such as a grinding method and powder metallurgy, etc. are mentioned using a high melting metal.

Next, for electrostatic adsorption, a conductive material such as the conductive ceramic powder is dispersed in an organic solvent so as to come into contact with the power supply terminal 15 in a predetermined region on the surface of the support plate 12 in which the power supply terminal 15 is fitted. An internal electrode forming coating solution is applied and dried to form an electrostatic adsorption internal electrode forming layer.
As the application method of the above-mentioned application liquid, since it is necessary to apply to uniform thickness, it is desirable to use screen printing method etc. As another method, a method of forming a thin film of the above refractory metal by vapor deposition or sputtering, an internal electrode for electrostatic adsorption by arranging a thin plate made of the above-mentioned conductive ceramic or refractory metal There is a method of forming a formed layer, and the like.

  Also, in order to improve the insulation, corrosion resistance and plasma resistance in the region other than the region where the internal electrode forming layer for electrostatic adsorption is formed on the support plate 12, the same as the mounting plate 11 and the support plate 12 An insulating material layer including a powder material having the same composition or main component is formed. The insulating material layer is formed by, for example, applying a coating solution in which an insulating material powder having the same composition or the same main component as the mounting plate 11 and the support plate 12 is dispersed in an organic solvent by screen printing etc. It can be formed by

Next, the mounting plate 11 is superposed on the electrostatic adsorption internal electrode forming layer and the insulating material layer on the support plate 12, and these are integrated by hot pressing under high temperature and high pressure. The atmosphere in this hot press is preferably vacuum or an inert atmosphere such as Ar, He, N ₂ or the like. Moreover, the pressure in the case of uniaxial pressurization in a hot press is preferably 5 to 10 MPa, and the temperature is preferably 1400 ° C to 1850 ° C.
By this hot press, the internal electrode forming layer for electrostatic adsorption is fired to become the internal electrode 13 for electrostatic adsorption formed of a conductive composite sintered body. At the same time, the support plate 12 and the mounting plate 11 are joined and integrated through the insulating material layer 14. Further, the power supply terminal 15 is refired by a hot press under high temperature and high pressure, and is closely fixed to the fixing hole of the support plate 12.
Then, the upper and lower surfaces, the outer periphery, the gas holes and the like of these bonded bodies are machined to form the electrostatic chuck portion 2.

Then, a predetermined region of the surface (lower surface) of the support plate 12 of the electrostatic chuck portion 2 has heat resistance and insulation such as polyimide resin, silicone resin, epoxy resin, etc. and has the same pattern shape as the heater element 5 A sheet-like or film-like adhesive resin is adhered to form a joint portion.
Then, on this joint portion, for example, titanium (Ti) thin plate, tungsten (W) thin plate, molybdenum (Mo) thin plate, etc. having a constant thickness of 0.2 mm or less, preferably 0.1 mm or less. A magnetic metal thin plate is adhered, and the nonmagnetic metal thin plate is etched to a desired heater pattern by photolithography to form a heater element 5.
As a result, an electrostatic chuck portion with a heater element is obtained in which the heater element 5 having a desired heater pattern is formed on the surface (lower surface) of the support plate 12.

Next, a power supply terminal 22 having a predetermined size and shape is produced. The method for producing the power supply terminal 22 is similar to the method for producing the power supply terminal 15 described above. For example, when the power supply terminal 22 is a conductive composite sintered body, the conductive ceramic powder is formed into a desired shape. And press firing.
Moreover, when the terminal 22 for electric power feeding is made into a metal, the method etc. of forming by metal processing methods, such as a grinding method and powder metallurgy, etc. using a high melting metal are mentioned.

On the other hand, a metal material consisting of aluminum (Al), aluminum alloy, copper (Cu), copper alloy, stainless steel (SUS), etc. is machined and water is circulated inside the metal material as required. Forming a path and the like, and further forming a fixing hole for fitting and holding the power supply terminal 15 and the insulator 17, and a fixing hole for fitting and holding the power supply terminal 22 and the insulator 23, and a temperature adjusting base portion Set to 3
It is preferable to perform an alumite treatment or form an insulating film such as alumina on at least the surface of the temperature control base portion 3 exposed to plasma.

Next, the bonding surface of the temperature adjustment base 3 with the electrostatic chuck 2 is degreased and cleaned using, for example, acetone, and heat resistance such as polyimide resin, silicone resin, epoxy resin, etc. is made at a predetermined position on this bonding surface. A sheet-like or film-like adhesive resin having a property and an insulating property is adhered to form a bonding layer 6.
Then, on the bonding layer 6, a film-like or sheet-like resin having insulation properties and voltage resistance such as polyimide resin, silicone resin, epoxy resin and the like having the same planar shape as the bonding layer 6 is adhered. And 7

Next, an adhesive made of, for example, a silicone resin is applied to a predetermined region on the temperature control base 3 on which the bonding layer 6 and the insulating member 7 are stacked. The amount of the adhesive applied is set within a predetermined range so that the electrostatic chuck portion 2 and the temperature adjusting base portion 3 can be joined and integrated with the spacer kept at a constant interval.
In addition to the manual application using a spatula or the like, the adhesive coating method may be a bar coating method, a screen printing method, or the like. Since there is a need, it is preferable to use a screen printing method or the like.

After the application, the electrostatic chuck portion 2 and the temperature adjusting base portion 3 are superposed via an adhesive. At this time, the erected power supply terminal 15 and the insulator 17 and the power supply terminal 22 and the insulator 23 are inserted and fitted into a power supply terminal accommodation hole (not shown) drilled in the temperature adjusting base portion 3.
Next, the electrostatic chuck portion 2 and the temperature adjusting base portion 3 are dropped until the distance between the electrostatic chuck portion 2 and the temperature adjusting base portion 3 reaches the thickness of the spacer, and the extruded excess adhesive is removed (adhesion step).

  In the present invention, the adhesive layer 8 formed between the electrostatic chuck portion and the temperature control base portion is thermally treated at a temperature of 100 ° C. or more and 200 ° C. or less for 80 hours or more by the adhesive. By performing the heat treatment of the adhesive layer 8 at a high temperature for a predetermined time or more in this way, the Young's modulus of the adhesive layer 8 is higher than that before the exposure even when repeatedly exposed at a high temperature in the subsequent use of the electrostatic chuck device. It is possible to provide an electrostatic chuck device which can be used stably for a long time while keeping the in-plane temperature of the mounting surface uniform.

If the temperature of the heat treatment is less than 100 ° C., the effect of the heat treatment cannot be obtained. Further, if the heat treatment exceeds 200 ° C., the adhesive layer 8 and the components of the apparatus are damaged. The heat treatment temperature is preferably 120 ° C. or higher and 200 ° C. or lower, and more preferably 130 ° C. or higher and 180 ° C. or lower.
Also, if the heat treatment time is less than 80 hours, a sufficient heat treatment effect cannot be obtained. The heat treatment time is preferably 90 hours or longer, and more preferably 100 hours or longer.

In the heat treatment of the adhesive layer in the present invention, the entire electrostatic chuck apparatus provided with the adhesive layer 6 may be disposed in a thermal oven apparatus, and heating and heat treatment may be performed as it is. You may go by use etc. In that case, the quality at the time of actual use can be secured by introducing the heater power when using the heater.
The temperature of the adhesive layer 8 may be confirmed using, for example, a temperature sensor provided on the temperature adjustment base 3.

Through the above steps, the electrostatic chuck portion 2 and the temperature control base portion 3 are bonded and integrated via the bonding layer 6, the insulating member 7 and the adhesive layer 8, and the electrostatic chuck device 1 of this embodiment is obtained. It will be In addition, in this invention, you may include arbitrary processes other than the said process.
The electrostatic chuck device 1 obtained in this manner adheres the electrostatic chuck portion 2 in which the heater element 5 is joined via the sheet-like or film-like joining portion 4 and the temperature adjusting base portion 3 The structure is integrally integrated through the layer 8 and the sheet-like or film-like insulating member 7, and the insulation between the electrostatic chuck 2 and the temperature control base 3 can be well maintained. Further, since the heater element 5 is joined to the electrostatic chuck portion 2, the uniformity of the in-plane temperature on the mounting surface of the electrostatic chuck portion 2 can be enhanced, and the voltage resistance of the heater element 5 is further improved. It is something that can be

  The adhesive layer 8 formed between the electrostatic chuck portion 2 and the temperature control base portion 3 functions as a buffer layer for alleviating rapid expansion and contraction of the electrostatic chuck portion 2. However, by performing the heat treatment on the adhesive layer 8 as described above, there is no change in Young's modulus of the adhesive layer 8 even in repeated use at high temperature, and as a result, deformation or the like in the electrostatic chuck portion 2 can be prevented. The electrostatic chuck device can be used stably for a long time while maintaining the in-plane temperature uniformity of the mounting surface.

  EXAMPLES Hereinafter, although an Example demonstrates this invention concretely, this invention is not limited by these Examples.

Evaluation of the electrostatic chuck apparatus etc. which were produced in each Example was performed as follows.
(1) Young's Modulus of Adhesive Layer The Young's modulus of the adhesive layer 8 was measured as follows. Specifically, a resin composition for forming an adhesive layer is cast into a film and thermally cured under the same conditions as the heat treatment step to obtain a cured film having a thickness of 100 μm, from which a test piece having a width of 4 mm is cut out. This was measured by the DMA method. Here, "DMA" refers to dynamic viscoelastic analysis, for example, one defined in JIS C 6481. Measurement conditions were obtained by applying a sine wave in the longitudinal direction with an amplitude of 16 μm and a frequency of 11 Hz from a state in which a tensile load of 10 g was applied in the longitudinal direction of the test piece with a span of 40 mm at each measurement temperature condition, The value was taken as Young's modulus.

(2) Durability A silicon wafer with a diameter of 300 mm is electrostatically attracted to the mounting surface of the electrostatic chuck portion 2 and cooling water at 20 ° C. is circulated to the temperature adjustment base portion 3 and only to the outer heater element 5 b. By energizing, the temperature of the silicon wafer is raised from 25 ° C. to 80 ° C. at a heating rate of 3 ° C./sec, held at 80 ° C. for 5 minutes, and then the energization of the heater element 5 is stopped 25 A thermal cycle of cooling to 0C was loaded 500 times. Thereafter, the electrostatic chuck device was observed and durability was evaluated according to the following criteria.
○: No abnormality is observed in the electrostatic chuck device.
Δ: On the upper surface of the electrostatic chuck, the central portion has a convex shape of 100 μm or less with respect to the outer peripheral portion, and does not affect the adsorption characteristics.
×: On the upper surface of the electrostatic chuck, the central portion has a convex shape larger than 100 μm with respect to the outer peripheral portion, and begins to affect the adsorption characteristics.

(3) In-Plane Temperature Uniformity and In-Plane Shape Uniformity of Silicon Wafer The in-plane temperature uniformity and in-plane form uniformity of the silicon wafer before and after the above-described durability test were examined by the following measurements a and b. .
a. A silicon wafer with a diameter of 300 mm is electrostatically attracted to the mounting surface of the electrostatic chuck 2, and the center temperature of the silicon wafer is 60 ° C. while cooling water of 20 ° C. is circulated to the temperature adjustment base 3. The outer heater 5b and the inner heater 5a of the heater element 5 are energized, and the in-plane temperature distribution of the silicon wafer at this time (the upper surface temperature of the silicon wafer at each position relative to the distance in the plane direction from the center) is measured using a thermography TVS-200EX (Nippon Avionics). Measurement).
b. The distribution (displacement of each position with respect to the distance of the surface direction from the center) of the uneven shape on the surface of the silicon wafer was measured using a three-dimensional shape measuring machine (manufactured by Tokyo Seimitsu Co., Ltd., XYZAX series) for a silicon wafer having a diameter of 300 mm.

Example 1
(Production of electrostatic chuck device)
An electrostatic chuck apparatus as shown in FIG. 1 was produced by a known method.
First, the electrostatic chuck portion 2 in which the internal electrode 3 for electrostatic adsorption having a thickness of 20 μm was embedded was produced. The mounting plate 11 of the electrostatic chuck portion 2 is an aluminum oxide-silicon carbide composite sintered body containing 8.5% by mass of silicon carbide, and has a disk shape of 298 mm in diameter and 0.5 mm in thickness. The In addition, the electrostatic adsorption surface of the mounting plate 11 is made uneven by forming a large number of protrusions 16 having a height of 40 μm, and the top surface of the protrusions 16 is a holding surface of the plate-like sample W. The cooling gas can be made to flow in a groove formed between the recess and the electrostatically adsorbed plate-like sample W.

Further, the supporting plate 12 was also an aluminum oxide-silicon carbide composite sintered body containing 8.5% by mass of silicon carbide as in the case of the mounting plate 11, and had a disk shape of 298 mm in diameter and 2 mm in thickness. By joining and integrating the mounting plate 11 and the support plate 12, the entire thickness of the electrostatic chuck portion 2 was 2.5 mm.
On the other hand, an aluminum temperature adjusting base 3 having a diameter of 350 mm and a height of 30 mm was produced by machining. A flow passage (not shown) for circulating the refrigerant was formed in the temperature adjustment base portion 3. In addition, a square spacer having a width of 2000 μm, a length of 2000 μm, and a height of 200 μm was produced from an aluminum oxide sintered body.

  Next, the surface (lower surface) of the support plate 12 of the electrostatic chuck unit 2 is degreased and washed with acetone, and a sheet adhesive made of an epoxy resin having a thickness of 20 μm is attached to a predetermined region of the surface. A titanium (Ti) thin plate with a thickness of 100 μm is placed on this joint, and held under pressure at 150 ° C. in vacuum to bond the electrostatic chuck 2 and the titanium (Ti) thin plate Fixed.

Next, the titanium (Ti) thin plate was etched into the heater pattern shown in FIG. In addition, a power feeding terminal 22 made of titanium was erected on the heater element 5 using a welding method. Thereby, the electrostatic chuck part with a heater element was obtained.
Next, the bonding surface of the temperature adjusting base 3 with the electrostatic chuck 2 is degreased and washed with acetone, and the bonding layer 6 is made of epoxy resin having a thickness of 20 μm at a predetermined position on the bonding surface. A sheet adhesive was stuck, and then a polyimide film having a thickness of 50 μm was stuck as the insulating member 7 on the sheet adhesive.

In addition, the surface-coated aluminum nitride (AlN) powder TOYALNITE (manufactured by Toyo Aluminum Co., Ltd.) coated with silicone resin TSE3221 (manufactured by Momentive Performance Materials Japan GK) is coated with silicon oxide (SiO ₂ ). Are mixed so as to be 20% by volume with respect to the total volume of the above silicone resin and surface-coated aluminum nitride (AlN) powder, and the mixture is subjected to stirring and defoaming treatment to obtain a silicone resin composition. The
The aluminum nitride powder used had an average particle size of 7 to 20 μm selected by a wet sieve. The thickness of silicon oxide (SiO ₂ ), which is a coating layer of this surface-coated aluminum nitride (AlN) powder, was 0.008 μm.

Next, the silicone resin composition is applied by screen printing on the temperature control base 3 on which the sheet adhesive and the polyimide film are laminated, and then the electrostatic chuck 2 and the temperature control base 3 are formed. They were superposed via a silicone resin composition. After that, the space between the heater element 5 of the electrostatic chuck 2 and the temperature adjustment base 3 is dropped until the height of the square spacer becomes 200 μm, and then held at 110 ° C. for 12 hours. The system resin composition was cured, and the electrostatic chuck portion 2 and the temperature adjusting base portion 3 were joined to produce an electrostatic chuck device.
Thereafter, the entire electrostatic chucking device was held (heat treatment) at 160 ° C. for 100 hours in a thermostatic chamber, and the electrostatic chucking device of Example 1 was manufactured. In the heat treatment step, it was confirmed by the temperature sensor of the temperature adjusting base portion 3 that the temperature of the adhesive layer 8 was 160 ° C.

Each evaluation mentioned above was performed about the produced electrostatic chuck device. The results are shown in Table 1.
Regarding the in-plane temperature uniformity and in-plane shape uniformity of the silicon wafer, the results of measurement of a and b are shown in FIG. 3 and FIG. 4. In the figure, the solid line represents the silicon wafer before the durability test. The in-plane temperature distribution and in-plane shape distribution in the one-diameter direction, and the broken lines show the in-plane temperature distribution and in-plane shape distribution in the one-diameter direction of the silicon wafer after the durability test, respectively. According to the measurement results of a and b, the in-plane temperature of the silicon wafer is well controlled within the range of less than ± 0.5 ° C., and the in-plane shape is also uniform with almost no change before and after the durability test. I understand.

Examples 2 to 6
The electrostatic chuck device of Example 1 was manufactured in the same manner as in Example 1 except that the composition of the adhesive for forming the adhesive layer 8 and the temperature of the heat treatment were changed as shown in Table 1. An electric chuck device was produced and evaluated. In the description of the adhesive layer in the table, the presence of "-" for the filler indicates the case where only silicone resin or fluorine resin is used as the adhesive, and the resin composition which becomes the adhesive in Example 1 for the diluent It is also added at the time of preparation.
The results are summarized in Table 1.

Comparative Example 1
Example of preparation of the electrostatic chuck device of Example 2 After bonding the electrostatic chuck portion and the temperature adjustment base portion using an acrylic adhesive, the heat treatment is not performed and the electrostatic chuck device is manufactured, Evaluation was performed in the same manner as in Example 1. The results are also shown in Table 1.
As for in-plane temperature uniformity and in-plane shape uniformity of the silicon wafer, the results of measurement of a and b are shown in FIG. 5 and FIG. According to the measurement results, the in-plane temperature of the silicon wafer fluctuates in the range of ± 2 ° C after the durability test, and the in-plane shape also has a convexity with a displacement of over 100 μm at the central part relative to the outer peripheral part I found out that it was shaped.

Comparative Example 2
In the preparation of the electrostatic chuck device of Example 2, after bonding the electrostatic chuck portion and the temperature control base portion using the silicone resin composition, the heat treatment is not performed and the electrostatic chuck device is manufactured. Were evaluated in the same manner as in Example 1. The results are also shown in Table 1.

The descriptions in Table 1 are as follows.
-Silicone resin: TSE3221, manufactured by Momentive Performance Materials Japan GK-Fluororesin: SIFEL 2614, manufactured by Shin-Etsu Chemical Co., Ltd.-Filler (F1): Surface coated aluminum nitride (AlN) powder TOYALNITE, Toyo Aluminum Co., Ltd. Made, average particle size; 8μm
Reactive diluent (D1): ME 91, manufactured by Momentive Performance Materials Japan Ltd.

  According to the above results, in the electrostatic chuck devices of Examples 1 to 6, the Young's modulus before and after heating of the adhesive layer at the time of heating at 160 ° C. for 100 hours satisfies the equation (1). Therefore, it can be seen that the electrostatic chuck device has no shape change in the electrostatic chuck portion even when used repeatedly at high temperature for a long time, and the electrostatic chuck device is excellent in durability and in-plane temperature uniformity.

  The present invention relates to an electrostatic chuck device that has no change in shape of the electrostatic chuck portion even when used at a high temperature for a long time and has excellent in-plane temperature uniformity, and relates to an electrostatic chuck device that requires high durability under more severe temperature conditions. It can be used as a chuck device.

DESCRIPTION OF SYMBOLS 1 electrostatic chuck device 2 electrostatic chuck portion 3 temperature adjustment base portion 5 heater element 5 a inner heater 5 b outer heater 6 bonding layer 7 insulating member 8 adhesive layer 11 mounting plate 12 support plate 13 internal electrode for electrostatic adsorption 14 Insulation layer

Claims (8)

An electrostatic chuck portion which has a main surface as a mounting surface on which a plate-like sample is to be mounted and which incorporates an internal electrode for electrostatic adsorption, an adhesive layer, and temperature control for adjusting the electrostatic chuck portion to a desired temperature And a base portion in this order,
When the adhesive layer is heated at 160 ° C. for 100 hours, the Young's modulus E1 (20) at 20 ° C. before the heating of the adhesive layer and the Young's modulus E2 (20 at 20 ° C. after the heating) ) Satisfies the following formula (1) ,
| (E2 (20) −E1 (20)) / E1 (20) | ≦ 2.0 (1)
The electrostatic chuck device in which Young's modulus E1 (180) at 180 ° C. before the heating and Young's modulus E2 (180) at 180 ° C. after the heating satisfy the following formula (2).
| (E2 (180) -E1 (180)) / E1 (180) | ≦ 2.0 (2) The electrostatic chuck device according to claim 1, wherein Young's moduli E2 (20) and E2 (180) at 20 ° C and 180 ° C after the heating of the adhesive layer are both 20 MPa or less. The electrostatic chuck device according to claim 1, wherein the adhesive layer is formed using an adhesive, and the adhesive includes one or more selected from a silicone resin and a fluorine resin. The electrostatic chuck device according to any one of claims 1 to 3, wherein the adhesive layer contains a filler having an average particle diameter of 1 μm to 10 μm. The electrostatic chuck device according to claim 4 , wherein the content of the filler in the adhesive is 5% by volume or more and 30% by volume or less based on the total volume of the adhesive. Wherein the adhesive comprises a silicone-based resin, further electrostatic chucking device according to any one of claims 1 to 5, comprising one or more reactive diluents. The electrostatic chuck device according to claim 6, wherein the content of the reactive diluent is 5% by volume or more and 30% by volume or less based on the total volume of the adhesive. It is a manufacturing method of the electrostatic chuck device according to any one of claims 1 to 7,
An electrostatic chuck having one main surface as a mounting surface for mounting a plate-like sample and a built-in electrostatic adsorption internal electrode, and a temperature control base for adjusting the electrostatic chuck to a desired temperature Adhering via an adhesive,
Heat treating an adhesive layer formed between the electrostatic chuck portion and the temperature control base portion with the adhesive at a temperature of 100 ° C. or more and 200 ° C. or less for 80 hours or more.