JP6559944B2 - Case and manufacturing method thereof - Google Patents

Description

  The present invention relates to a case and a manufacturing method thereof, and more particularly to a case having a transparent film formed on a surface and a manufacturing method thereof.

  Currently, with the development of technology, functions of electronic devices such as notebook personal computers, mobile phones, and multimedia devices are increasingly diversified, and demands on the appearance of these electronic devices are also increasing. Therefore, electronic products having a high brightness and smooth case and electronic products having a metallic texture are popular with consumers.

  In order to increase the brightness and smoothness of the appearance of the electronic product, a transparent film is usually formed on the surface of the electronic product by a method such as painting. However, the conventional manufacturing process is complicated, and the smoothness of the transparent film obtained by manufacturing is lower. In addition, the wear resistance is poor and the service life is relatively short.

  The present invention has been made in consideration of the above problems, and an object thereof is to provide a case in which a transparent film having high luminance and high smoothness is formed on the surface.

  In order to solve the above-described problems, a case according to the present invention includes a base material and a transparent film covering the surface of the base material, and the transparent film is an underlayer and a transition layer sequentially formed on the upper surface of the base material. And the transparent layer is a metallic chromium layer and formed on the surface of the substrate, the transition layer is a chromium carbide layer and formed on the surface of the underlying layer, and the transparent layer is made of silicon. Formed on the surface of the transition layer.

  In addition, in order to solve the above-described problems, a manufacturing method of a case according to the present invention includes a step of providing a base material and a chromium target on the surface of the base material by a magnetron sputtering method using a chromium target. Using a chromium target, a step of forming a formation layer, injecting acetylene as a reactive gas, forming a transition layer made of chromium carbide on the surface of the underlayer by magnetron sputtering, and using a silicon target, Forming a transparent layer made of silicon on the surface of the transition layer by magnetron sputtering.

  Unlike the prior art, the present invention produces a case with a transparent film on the surface by a new PVD coating technique using a special target combination. The transparent film has high transparency, brightness, and smoothness. Therefore, the appearance of the case also has high brightness and high smoothness. In the present invention, an underlayer, a transition layer, and a transparent layer are sequentially formed on the surface of the substrate by magnetron sputtering. Each layer is closely bonded to each other, and no obvious stress is generated inside each layer. Therefore, the transparent film is not easily broken even when subjected to external force, has good hardness and wear resistance, and has a long service life. long.

It is sectional drawing of the case which concerns on embodiment of this invention. It is a top view of the vacuum evaporation system used for the manufacturing method of the case concerning the present invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  As shown in FIG. 1, the case 100 of the present invention is used for 3C electronic products or automotive electronic products. Specifically, the case 100 includes a base material 20 and a transparent film 10 formed on the surface of the base material 20. The transparent film 10 is colorless and transparent, and includes a base layer 13, a transition layer 15, and a transparent layer 17 that are sequentially formed on the upper surface of the substrate 20 from below.

  The material of the substrate 20 is metal, plastic, or ceramic.

  The underlayer 13 is a metal chrome layer that covers the surface of the substrate 20, and has a thickness of 0.1 μm to 0.3 μm. The underlayer 13 plays a role of increasing the bonding force between the base material 20 and the transition layer 15.

  The transition layer 15 is a chromium carbide (CrC) layer covering the surface of the underlayer 13 and has a thickness of 0.2 μm to 0.4 μm. The transition layer 15 enhances the adhesion of the transparent layer 17.

  The transparent layer 17 is a silicon layer covering the surface of the transition layer 15 and has a thickness of 0.1 μm to 0.3 μm. The transparent layer 17 contains only silicon atoms and has high transparency.

  In the case 100, the base layer 13 is formed by sputtering metal chromium on the surface of the base material 20, and the transition layer 15 is formed by sputtering chromium carbide on the surface of the base layer 13, The transparent layer 17 is formed by sputtering silicon on the surface of the transition layer 15. Each layer is tightly bonded to each other, and since no obvious stress is generated inside each layer, the transparent film 10 is not easily broken even when subjected to an external force, and has good hardness and wear resistance. Long life.

  Moreover, in the case 100 of this invention, since the base layer 13 is a metal chromium layer, it has transparency. Since the thickness of the transition layer 15 is relatively thin, the transparency of the entire transparent film 10 is not affected. Since the transparent layer 17 contains only silicon atoms, it has higher transparency. In addition, the surface of the transparent layer 17 is smooth. Thereby, since the transparent film 10 has higher transparency as a whole, the appearance of the case 100 has high luminance and high smoothness.

  The method for manufacturing the case 100 according to the embodiment of the present invention includes the following steps.

  In the first step, a vacuum deposition apparatus 200 is provided. As shown in FIG. 2, the vacuum deposition apparatus 200 includes a vacuum chamber 21 and a vacuum pump 300 connected to the vacuum chamber 21. The vacuum pump 300 is used to bring the vacuum chamber 21 into a vacuum environment. Inside the vacuum chamber 21, a rotating shelf (not shown), a chromium target 23, and a silicon target 24 are further provided. The rotating shelf moves the substrate 20 and revolves along the circular track 25. At this time, the base material 20 rotates while revolving along the track 25.

  In the second step, a substrate 20 made of any one of metal, plastic and ceramic is provided.

  In the third step, a pretreatment is performed on the surface of the substrate 20. Specifically, ultrasonic cleaning of the base material 20 is performed using absolute ethanol, and oil or dirt on the surface of the base material 20 is removed. The ultrasonic cleaning time is 25 minutes to 35 minutes. Next, the surface of the substrate 20 is polished to perform mirror finish. Then, after drying the pretreated base material 20, the base material 20 is fixed to a rotating shelf in the vacuum chamber 21.

In the fourth step, the vacuum pump 300 is activated and the vacuum chamber 300 is evacuated to 5 × 10 ⁻² Pa by the vacuum pump 300.

In the fifth step, the target is washed. Specifically, the flow rate is injected argon 100ml / min (sccm), under steady output of 5k W, to clean the target 15 minutes.

In the sixth step, the vacuum chamber 21 is further evacuated and heated. The temperature of the vacuum chamber 21 is set to 200 ° C. Next, the vacuum chamber 21 is evacuated to 5 × 10 ⁻³ Pa by the vacuum pump 300.

  In the seventh step, high voltage argon ion glow cleaning is performed. Specifically, the temperature of the vacuum chamber 21 is set to 120 ° C., the bias voltage is set to 1300 V, and argon is injected into the vacuum chamber 21 to clean the surface of the substrate 20.

In the eighth step, the underlayer 13 is formed on the upper surface of the cleaned substrate 20 by magnetron sputtering. Specifically, to start the RF power corresponding to the chromium target, and sets the power of the RF power source 8 k W~15 k W, sustained argon flow rate is 100sccm~150sccm into a vacuum chamber 21 The temperature in the vacuum chamber 21 is set to 120 ° C. to 180 ° C., a bias voltage of 100 V to 250 V is applied to the substrate 20, and coating is performed for 5 minutes to 10 minutes.

In the ninth step, the transition layer 15 is formed on the surface of the base layer 13 by the magnetron sputtering method using the chromium target 23. When sputtering, with a and power to start the RF power was set at 6 k W~12 k W, flow rate into the vacuum chamber 21 to inject argon 80sccm~140sccm as an inert gas, the flow rate is 50sccm~75sccm performing acetylene was injected as a reaction gas, the temperature inside the vacuum chamber 21 to 100 ° C. to 1 7 0 ° C., after applying a bias voltage of 200V~300V to the substrate 20, the coating 40 minutes to 50 minutes . Since the amount of acetylene injected is relatively small, the transparency of the transparent film 10 is not affected.

In the tenth step, the transparent layer 17 is formed on the surface of the transition layer 15 by the magnetron sputtering method using the silicon target 24. When sputtering, and power to start the RF power is set to 4k W ~8k W, flow rate injected argon 50sccm~135sccm into a vacuum chamber 21, the temperature inside the vacuum chamber 21 90 ° C. to 120 ° C. Then, after applying a bias voltage of 200V to 400V to the substrate 20, coating is performed for 20 minutes to 40 minutes.

  Hereinafter, the present invention will be described with reference to specific examples.

[Example 1]
(A) A base material 20 made of stainless steel 316 is provided.

(B) The underlayer 13 is formed on the upper surface of the substrate 20 by magnetron sputtering. Specifically, to start the RF power corresponding to the chromium target 23, the power supply to 8k W, flow rate into the vacuum chamber 21 is continuously injected 100sccm of argon, the temperature in the vacuum chamber 21 Is set to 170 ° C., a bias voltage of 100 V is applied to the substrate 20, and coating is performed for 5 minutes.

(C) The transition layer 15 is formed on the upper surface of the underlayer 13 by magnetron sputtering. Specifically, the power of the RF power corresponding to the chromium target 23 to 6k W, flow rate argon and the flow rate of 110sccm and continuously injected acetylene of 55sccm into the vacuum chamber 21, the temperature in the vacuum chamber 21 After applying a bias voltage of 200 V to the substrate 20 at 160 ° C., coating is performed for 40 minutes.

(D) A transparent layer 17 is formed on the upper surface of the transition layer 15 by magnetron sputtering. Specifically, the power of the RF power corresponding to the silicon target 24 to 6k W, the flow rate is continuously injected argon 125sccm into the vacuum chamber 21, the temperature in the vacuum chamber 21 to 130 ° C., group A bias voltage of 300 V is applied to the material 20 and coating is performed for 20 minutes.

[Example 2]
(A) The base material 20 made of stainless steel 304 is provided.

(B) The underlayer 13 is formed on the upper surface of the substrate 20 by magnetron sputtering. Specifically, the power of the RF power corresponding to the chromium target 23 to 10k W, the flow rate is continuously injected argon 110sccm into the vacuum chamber 21, the temperature in the vacuum chamber 21 to 175 ° C., group A bias voltage of 150 V is applied to the material 20 and coating is performed for 8 minutes.

(C) The transition layer 15 is formed on the upper surface of the underlayer 13 by magnetron sputtering. Specifically, the power of the RF power corresponding to the chromium target 23 to 7k W, flow rate argon and the flow rate of 120sccm by injecting acetylene 60sccm into a vacuum chamber 21, 165 ° C. The internal temperature of the vacuum chamber 21 Then, after applying a bias voltage of 250 V to the substrate 20, coating is performed for 45 minutes.

(D) A transparent layer 17 is formed on the upper surface of the transition layer 15 by magnetron sputtering. Specifically, the power of the RF power corresponding to the silicon target 24 to 5.5K W, flow rate injected argon 120sccm into the vacuum chamber 21, and the internal temperature of the vacuum chamber 21 to 125 ° C., the substrate After applying a bias voltage of 350V to 20, coating is performed for 25 minutes.

[Example 3]
(A) A base material 20 made of stainless steel 314 is provided.

(B) The underlayer 13 is formed on the upper surface of the substrate 20 by magnetron sputtering. Specifically, the power of the RF power corresponding to the chromium target 23 to 12k W, the flow rate is continuously injected argon 135sccm into the vacuum chamber 21, the temperature in the vacuum chamber 21 to 180 ° C., group After applying a bias voltage of 220 V to the material 20, coating is performed for 12 minutes.

(C) The transition layer 15 is formed on the upper surface of the underlayer 13 by magnetron sputtering. Specifically, the power of the RF power corresponding to the chromium target 23 to 9k W, argon and the flow rate flow rate of 135sccm into the vacuum chamber 21 is injected acetylene 65 sccm, 170 ° C. The internal temperature of the vacuum chamber 21 Then, after applying a bias voltage of 300 V to the substrate 20, coating is performed for 50 minutes.

(D) A transparent layer 17 is formed on the upper surface of the transition layer 15 by magnetron sputtering. Specifically, the power of the RF power corresponding to the silicon target 24 to 7k W, flow rate injected argon 135sccm into the vacuum chamber 21, the internal temperature of the vacuum chamber 21 to 115 ° C., the substrate 20 On the other hand, after applying a bias voltage of 400 V, coating is performed for 35 minutes.

DESCRIPTION OF SYMBOLS 10 Transparent film 13 Underlayer 15 Transition layer 17 Transparent layer 20 Base material 21 Vacuum chamber 23 Chrome target 24 Silicon target 25 Track 100 Case 200 Vacuum vapor deposition apparatus 300 Vacuum pump

Claims (8)

A case comprising a substrate and a transparent film covering the surface of the substrate;
The transparent film includes a base layer, a transition layer, and a transparent layer sequentially formed on the upper surface of the base material, and the base layer is a metal chromium layer and formed on the surface of the base material, and the transition The case is characterized in that the layer is a chromium carbide layer and formed on the surface of the underlayer, and the transparent layer is a silicon layer and formed on the surface of the transition layer.   The case according to claim 1, wherein the transparent layer is composed of silicon atoms, and the thickness of the transparent layer is 0.1 μm to 0.3 μm.   The case according to claim 1, wherein the base layer has a thickness of 0.1 μm to 0.3 μm, and the transition layer has a thickness of 0.2 μm to 0.4 μm.   The case according to claim 1, wherein the material of the base material is metal, plastic, or ceramic. Providing a substrate;
Forming a base layer made of chromium on the surface of the substrate by magnetron sputtering using a chromium target;
Injecting acetylene as a reaction gas using the chromium target, and forming a transition layer made of chromium carbide on the surface of the underlayer by the magnetron sputtering method;
Forming a transparent layer made of silicon on the surface of the transition layer by a magnetron sputtering method using a silicon target;
A method for manufacturing a case, comprising: When forming the undercoat layer, and the power of the RF power corresponding to the chromium target to 8k W ~15k W, flow rate into the vacuum chamber by injecting argon 100Sccm～150sccm, 120 the internal temperature of the vacuum chamber The method for producing a case according to claim 5, wherein the coating is performed for 5 minutes to 10 minutes after the bias voltage of 100 V to 250 V is applied to the base material at a temperature of from about 180 to 180 ° C. 6. When forming the transition layer, the power of the RF power corresponding to the chromium target to 6k W ~12k W, argon and the flow rate of the flow rate 80sccm~140sccm in a vacuum chamber by injecting acetylene 50Sccm～75sccm, the internal temperature of the vacuum chamber 100 ℃ ~1 7 0 ℃, after applying a bias voltage of 200V~300V to the substrate, to claim 5, characterized in that the coating for 40 minutes to 50 minutes A manufacturing method of the case described. When forming the transparent layer, the power of the RF power corresponding to the silicon target to 4k W ~8k W, flow rate into the vacuum chamber by injecting argon 50Sccm～135sccm, the internal temperature of the vacuum chamber 90 The method for producing a case according to claim 5, wherein the coating is performed for 20 minutes to 40 minutes after the bias voltage of 200 V to 400 V is applied to the base material at a temperature of 120 ° C. to 120 ° C. 6.

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