JP6569406B2 - Atomic layer deposition apparatus and film formation method for atomic layer deposition - Google Patents

Description

  The present invention relates to an atomic layer deposition apparatus and a film formation method for atomic layer deposition.

  The organic EL device is configured by arranging a large number of organic EL elements on a plane at regular intervals. In the organic EL element, a light emitting layer is sandwiched between a pair of electrode layers (anode and cathode). The light emitting layer emits light when a voltage is applied between the electrodes. However, when water permeates into the organic EL element and the electrode is oxidized or the light emitting layer and the electrode are peeled off, there is a case where a portion that does not emit light (referred to as a black spot or a dark spot) is generated in the light emitting layer. Therefore, in an organic EL device, it is required to prevent the occurrence of dark spots due to moisture infiltration.

  Conventionally, between a substrate, an electrode layer, a light emitting layer that is an organic light emitting material, and an organic EL element in which the electrode layer is laminated on the substrate, and a sealing layer that is disposed so as to cover the laminate, A dense protective film (atomic layer deposition) formed by an atomic layer deposition apparatus (ADL apparatus) is formed. Since this protective film is formed by depositing an atomic layer, it is very dense and can prevent infiltration of moisture.

  In Patent Document 1, the electrode layer, the light emitting layer, and the organic EL element portion of the electrode layer stacked on the substrate are covered, but the protective film is not covered so that the terminal portion drawn from the organic EL element portion is not covered. An atomic layer deposition apparatus is disclosed that forms a protective film only on the surface of an organic EL element part by disposing a mask on the surface of the terminal part on the substrate when forming.

JP 2014-1424 A

  However, the atomic layer deposition apparatus described in Patent Document 1 can form a region where a protective film is formed on a substrate and a region where no protective film is formed on the substrate. There was a problem that the protective film could not be formed.

SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.
An atomic layer deposition apparatus according to an aspect of the present invention includes: a mounting table having a mounting surface; and a facing member that is disposed to face the mounting surface and has a plurality of facing surfaces, the plurality of facing surfaces. Includes a first facing surface, a second facing surface, and a third facing surface, and a first distance between the first facing surface and the placement surface, and the second facing surface The second distance between the placement surface and the third distance between the third facing surface and the placement surface are different from each other.
An atomic layer deposition apparatus according to another aspect of the present invention includes a mounting table having a mounting surface, a counter member disposed to face the mounting surface and having a plurality of counter surfaces, the counter member, and the mounting table. A distance adjusting means capable of adjusting a distance between the first opposing surface and the placement surface, wherein the plurality of opposing surfaces include a first opposing surface and a second opposing surface. Unlike the first distance between and the second distance between the second facing surface and the mounting surface, the distance adjusting means measures the distance between the facing member and the mounting table. It has a measuring part.

  [Application Example 1] An atomic layer deposition apparatus according to this application example includes a mounting table having a mounting surface and a plurality of opposing surfaces that are arranged to face the mounting surface and have different distances from the mounting surface. And an opposing member.

  According to this application example, the mounting surface of the mounting table on which the substrate is mounted and the facing surface of the facing member disposed on the substrate are disposed at a plurality of different distances. The film thickness of atomic layer deposition can be controlled by the difference in the diffusion distance of the gas that generates atomic layer deposition depending on the distance to the facing surface. In other words, by reducing the distance between the mounting surface and the opposing surface, the gas diffusion distance can be shortened and the film thickness can be reduced, and conversely, by increasing the distance between the mounting surface and the opposing surface. The gas diffusion distance can be increased and the film thickness can be increased. Therefore, by providing a plurality of distances between the mounting surface and the opposing surface, atomic layer deposition having a plurality of film thicknesses can be formed in one film forming sequence.

  Application Example 2 In the atomic layer deposition apparatus according to the application example described above, it is preferable that the facing surface includes a tip portion of a convex portion.

  According to this application example, since the front end portion of the convex portion is also an opposing surface, the opposing member can be provided with a plurality of opposing surfaces having different distances from the mounting surface, so that atomic layer deposition having a plurality of film thicknesses is possible. Can be formed.

  Application Example 3 In the atomic layer deposition apparatus according to the application example described above, it is preferable that the facing member has a plurality of convex portions having different distances from the mounting table.

  According to this application example, since the opposing member has a plurality of convex portions having different distances from the mounting table, the opposing member can have opposing surfaces having different distances from the plurality of mounting surfaces. An atomic layer deposition having a thickness can be formed.

  Application Example 4 In the atomic layer deposition apparatus according to the application example described above, it is preferable that the atomic layer deposition apparatus includes a distance adjusting unit capable of adjusting a distance between the facing member and the mounting table.

  According to this application example, since the distance adjustment unit that can adjust the distance between the opposing surface of the opposing member and the mounting surface of the mounting table can be adjusted, the distance between the opposing surface and the mounting surface can be adjusted. An atomic layer deposition having a thickness can be formed.

  Application Example 5 In the atomic layer deposition apparatus according to the application example described above, it is preferable that the distance adjusting unit includes a measuring unit that measures a distance between the facing member and the mounting table.

  According to this application example, since the distance adjusting unit includes the measurement unit that measures the distance between the facing member and the mounting table, the distance between the facing member and the mounting table can be adjusted to a desired value. An atomic layer deposition having a thickness of 5 nm can be formed.

  Application Example 6 An atomic layer deposition film forming method according to this application example is characterized in that a film is formed by the atomic layer deposition apparatus described in the application example.

  According to this application example, a plurality of films can be obtained by using an atomic layer deposition apparatus that includes a mounting table having a mounting surface and a counter member having a plurality of counter surfaces with different distances from the mounting surface. Thick atomic layer deposition can be deposited in one deposition sequence.

  Application Example 7 In the film formation method for atomic layer deposition described in the application example above, the distance between the facing surface closer to the processing surface and the processing surface among the plurality of facing surfaces of the facing member is 5 μm or more and 40 μm. It is preferable to be within the following range.

  According to this application example, by setting the distance between the facing surface and the surface to be processed within the range of 5 μm or more and 40 μm or less, it is possible to adjust the gas inflow and the diffusion distance for forming the atomic layer deposition. The thickness of atomic layer deposition can be controlled, and atomic layer deposition with different thicknesses can be formed with high accuracy.

1 is a schematic cross-sectional view showing a configuration of an atomic layer deposition apparatus according to a first embodiment of the present invention. The schematic sectional drawing which shows the structure of the mounting base and opposing member which concern on 1st Embodiment of this invention. The graph which shows the relationship between a diffusion distance and a film thickness with respect to the distance of the to-be-processed surface of a board | substrate, and the opposing surface of an opposing member. The schematic sectional drawing which shows the structure of an organic EL element. The schematic sectional drawing which shows the structure of the opposing member which concerns on 2nd Embodiment of this invention. 1 is a schematic cross-sectional view showing a configuration of an organic EL device. Schematic which shows the structure of the atomic layer deposition apparatus concerning 3rd Embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In each figure shown below, the size and ratio of each component may be described differently from the actual component in order to make each component large enough to be recognized on the drawing. is there.

<First Embodiment>
First, a schematic configuration of an atomic layer deposition apparatus according to the first embodiment of the present invention will be described with reference to FIG.
FIG. 1 is a schematic cross-sectional view showing a configuration of an atomic layer deposition apparatus according to the first embodiment of the present invention. In the figure, the direction in which the opposing member 30 is disposed is referred to as the upper side with the mounting table 24 as a reference, and the opposite side is referred to as the lower side.

  As shown in FIG. 1, the atomic layer deposition apparatus 10 according to the present embodiment includes a chamber 20 for performing atomic layer deposition, a mounting table 24 having a mounting surface 26, an opposing member 30 having a convex portion 32, and a chamber 20. Measurement for measuring the height by aligning the gas supply unit 34 for supplying the reaction gas therein, the exhaust unit 36 for exhausting the gas in the chamber 20, and the substrate 22 placed on the mounting table 24 and the opposing member 30. Part 38 and the like.

  The chamber 20 includes a mounting table 24 on which the substrate 22 is mounted and an opposing member 30 having a convex portion 32 for adjusting the thickness of atomic layer deposition. The substrate 22 is placed on the placement surface 26 of the placement table 24. Further, the facing member 30 is disposed on the side facing the mounting surface 26 or the substrate 22 of the mounting table 24, that is, above the mounting table 24, and the convex portion 32 of the facing member 30 is disposed on the mounting surface 26 of the mounting table 24. Alternatively, it is provided on the side facing the substrate 22.

  Above the chamber 20, a window portion 60 made of a transparent member such as glass is provided. Through the camera 62, the position of the mounting table 24 or the substrate 22 and the opposing member 30 is measured, or the mounting table 24. Alternatively, the height of the substrate 22 and the opposing member 30 is measured, and the alignment unit 38 or the height adjustment amount between the mounting table 24 or the substrate 22 and the opposing member 30 is measured by the measuring unit 38. That is, the atomic layer deposition apparatus 10 according to the present embodiment includes the measurement unit 38 that measures the distance between the mounting table 24 or the substrate 22 and the facing member 30.

  The mounting table 24 has a built-in heater 28 for heating the substrate 22 and is fixed to the slider 40. The slider 40 is connected to a motor 42, and the motor 42 can move the slider 40 in a direction parallel to the mounting surface 26 of the mounting table 24. Therefore, based on the result measured by the measurement unit 38, the motor 42 is controlled by the control unit 44, and the position of the mounting table 24 can be adjusted in a direction parallel to the mounting surface 26.

  The facing member 30 is held by a holding portion 50 fixed to a slider 52 that can be moved in a direction intersecting the mounting surface 26 of the mounting table 24, and is opposed by a motor 54 connected to the slider 52. The member 30 can be moved in a direction intersecting the placement surface 26. Therefore, based on the result measured by the measurement unit 38, the motor 54 can be controlled by the control unit 56, and the position of the facing member 30 can be adjusted in the direction intersecting the placement surface 26. That is, the atomic layer deposition apparatus 10 of the present embodiment has a distance adjusting unit that can adjust the distance between the facing member 30 and the mounting table 24.

  The sliders 40 and 52 are connected to the motors 42 and 54 via seal portions 46 and 58 for keeping the inside of the chamber 20 airtight. Therefore, the inside of the chamber 20 is kept airtight even when the positions of the mounting table 24 and the facing member 30 are adjusted.

Next, the positional relationship among the mounting table 24, the substrate 22, and the opposing member 30 will be described with reference to FIG. The substrate 22 will be described by taking as an example a substrate provided with partition walls 80 necessary for constituting a large number of organic EL elements at a constant interval.
FIG. 2 is a schematic cross-sectional view showing the configuration of the mounting table and the opposing member according to the first embodiment of the present invention.
The substrate 22 having the partition wall 80 is mounted on the mounting surface 26 of the mounting table 24 with the side on which the partition wall 80 is provided facing the opposing member 30.
The facing member 30 is disposed so that the convex portion 32 is located between the partition wall 80 and the partition wall 80 with the convex portion 32 facing the substrate 22 side.

  The facing member 30 has a facing surface 70 that faces the mounting surface 26 or the substrate 22, and a facing surface 74 that faces the mounting surface 26 or the substrate 22 of the tip 72 of the convex portion 32. It arrange | positions so that the distance of the opposing surface 74 and the to-be-processed surface 82 of the board | substrate 22 may become G1, so that the distance of the surface 70 and the to-be-processed surface 82 of the board | substrate 22 may become G2. In other words, the facing member 30 is disposed to face the mounting surface 26 or the surface to be processed 82 of the substrate 22, and has a plurality of facing surfaces 70 and 74 having different distances from the mounting surface 26 or the surface to be processed 82 of the substrate 22. have.

Next, the relationship between the diffusion distance of the atomic layer deposition and the film thickness with respect to the distance between the processing target surface 82 of the substrate 22 and the opposing surfaces 70 and 74 of the opposing member 30 will be described with reference to FIG.
FIG. 3 is a graph showing the relationship between the diffusion distance and the film thickness with respect to the distance between the surface to be processed of the substrate and the opposing surface of the opposing member. Note that the diffusion distance refers to the area between the surface to be processed and the opposing surfaces 70 and 74, from the entrance of the sandwiched space to the region where the gas flows and diffuses to form the atomic layer deposit. Length.

  When the distance between the processing surface 82 of the substrate 22 and the opposing surfaces 70 and 74 of the opposing member 30 is 5 μm, the film thickness near the entrance is about 7 nm and the diffusion distance is about 3 mm. When the distance is 20 μm and 40 μm, the film thickness in the vicinity of the entrance is about 25 nm and about 35 nm, and the diffusion distance is about 9 mm and about 15 mm. Further, when the distance is 60 μm, the film thickness near the entrance is about 40 nm, and even when the diffusion distance is 15 mm, the film thickness is about 35 nm, which is about 10% decrease near the entrance.

  From this result, by reducing the distance between the processing surface 82 of the substrate 22 and the opposing surfaces 70 and 74 of the opposing member 30, the film thickness of the atomic layer deposited can be reduced. By increasing the distance between the processing surface 82 and the opposing surfaces 70 and 74, the thickness of the atomic layer deposited can be increased. This is because the distance between the surface to be processed 82 and the opposing surfaces 70 and 74 becomes small, so that the gas for forming the atomic layer deposition flows and becomes difficult to diffuse, and the atomic layer deposition is not formed. It is. On the contrary, when the distance between the surface 82 to be processed and the opposing surfaces 70 and 74 is increased, the gas for forming the atomic layer deposition flows and diffuses easily, the film thickness near the entrance becomes thick, and long diffusion occurs. Atomic distance deposition is deposited up to a distance. However, when the distance is 40 μm and 60 μm, the film thickness near the entrance is about 35 nm and about 40 nm, and the difference is small.

  Accordingly, when the atomic layer deposition is formed in a region where the interval between the partition walls 80 is less than 1 mm as in the case of an organic EL element, the diffusion distance is short, so the distance between the surface to be processed 82 and the opposing surfaces 70 and 74 is adjusted. By doing so, atomic layer deposition can be accurately formed to a desired film thickness. When the distance between the surface to be processed 82 and the opposing surfaces 70 and 74 is less than 5 μm, the distance control is difficult due to the influence of the measurement accuracy and the height adjustment accuracy, and the film thickness accuracy may be deteriorated. is there. Further, when the distance between the processing surface 82 and the opposing surfaces 70 and 74 is larger than 40 μm, the film thickness cannot be significantly increased as compared with the film thickness at 40 μm. Therefore, the distance between the surface to be processed 82 and the opposing surfaces 70 and 74 is preferably in the range of 5 μm to 40 μm.

Next, an atomic layer deposition film forming method using the atomic layer deposition apparatus 10 of the present embodiment will be described with reference to FIG. 4 taking the protective film 120 in the method for manufacturing the organic EL element 100 as an example.
FIG. 4 is a schematic cross-sectional view showing the configuration of the organic EL element. Normally, a plurality of organic EL elements are formed on the large substrate at regular intervals, but only one organic EL element 100 in FIG. 4 is formed at the end of the large substrate.

  As shown in FIG. 4, the organic EL element 100 includes an electrode layer 114 serving as an anode, a partition 112, a light emitting unit 116, an electrode layer 118 serving as a cathode, a protective film 120, a planarizing layer 122, a sealing layer on a substrate 110. It is comprised with the laminated body laminated | stacked in order of the layer 124. FIG. The light emitting unit 116 emits light when a voltage is applied between the anode and cathode electrode layers 114 and 118.

In the manufacturing method of the organic EL element 100, first, a substrate 110 such as quartz glass is prepared, and the surface of the substrate 110 is cleaned with an aqueous solution containing hydrofluoric acid (HF) or pure water.
Next, an electrode layer 114 serving as an anode is formed on the substrate 110. Electrode materials such as ITO (Indium Tin Oxide) having transparency as the electrode layer 114 include, for example, chemical vapor deposition methods (CVD methods) such as plasma CVD and thermal CVD, dry plating methods such as vacuum deposition, and electrolytic plating. It can be formed using a wet plating method, a thermal spraying method, a sol-gel method, a MOD method, a metal foil bonding, or the like.

  After that, an organic material such as an acrylic resin is uniformly formed on the substrate 110 on which the electrode layer 114 is formed, and the partition 112 is formed by a photolithography method so that the electrode layer 114 is exposed. To do. Alternatively, a method of forming an organic material such as an acrylic resin by a screen printing method may be used. The partition 112 can be formed by heating after pattern formation.

Next, oxygen plasma treatment is performed on the upper surface of the electrode layer 114. Accordingly, lyophilicity is imparted to the upper surface of the electrode layer 114, organic substances attached to the upper surface of the electrode layer 114 are removed (washed), a work function near the upper surface of the electrode layer 114 is adjusted, and the like. be able to.
Here, as the conditions for the oxygen plasma treatment, for example, the plasma power is about 100 to 800 W, the oxygen gas flow rate is about 50 to 100 mL / min, the conveying speed of the member to be treated (electrode layer 114) is about 0.5 to 10 mm / sec, The temperature of the substrate 110 is preferably about 70 to 90 ° C.

After that, the light emitting portion 116 is formed over the electrode layer 114 serving as the anode and the partition 112. The light emitting unit 116 is configured as a stacked body in which a hole injection layer, a light emitting layer, an electron transport layer, and an electron injection layer are stacked.
First, the hole injection layer is formed by, for example, a vapor phase process using a CVD method, a dry plating method such as vacuum deposition or sputtering, or the like.
Next, a light emitting layer is formed on the hole injection layer. The light emitting layer can be formed by, for example, a vapor phase process using a dry plating method such as vacuum deposition.

Next, an electron transport layer is formed on the light emitting layer. The electron transport layer is preferably formed, for example, by a vapor phase process using a dry plating method such as vacuum deposition.
Next, an electron injection layer is formed on the electron transport layer. When an inorganic material is used as a constituent material of the electron injection layer, the electron injection layer is formed by, for example, a vapor phase process using a CVD method, a dry plating method such as vacuum deposition or sputtering, or coating and baking of inorganic fine particle ink. Can be formed.

Next, an electrode layer 118 serving as a cathode is formed on the electron injection layer of the light emitting portion 116.
An electrode material such as MgAg can be formed as the electrode layer 118 using, for example, a vacuum deposition method, a sputtering method, metal foil bonding, metal fine particle ink application, and baking.

  In addition, since the organic EL element 100 of this embodiment is a bottom emission type, the electrode layer 118 serving as a cathode is not particularly required to have light transmittance. In the case of the top emission type, since it is necessary to transmit light from the electrode layer 118 side, the average thickness of the electrode layer 118 is preferably about 1 to 50 nm.

Thereafter, a protective film 120 for atomic layer deposition is formed on the electrode layer 118 serving as a cathode by using the atomic layer deposition apparatus 10 of the present embodiment. The protective film 120 such as aluminum oxide (Al ₂ O ₃ ) suppresses moisture permeation into the light emitting portion 116 and needs to be formed very densely, and thus is formed by the atomic layer deposition apparatus 10. .

For forming the protective film 120 such as aluminum oxide (Al ₂ O ₃ ) on the electrode layer 118, first, referring to FIG. 1 again, the substrate on which the electrode layer 118 mounted on the mounting table 24 is formed. 22 and the opposing member 30 are adjusted, and the height is adjusted so that the distance between the surface to be processed 82 of the substrate 22 and the opposing surface 74 of the convex portion 32 is, for example, 20 μm.

Next, TMA (Tri Methyl Aluminum), which is a reactive gas, and nitrogen (N ₂ ), which is a carrier gas, are introduced into the chamber 20 of the heated atomic layer deposition apparatus 10 from a gas supply unit 34. TMA gas is introduced into the chamber 20, and aluminum atoms adhere (chemically adsorb) on the electrode layer 118 of the substrate 110 by reaction with OH groups applied to the surface of the substrate 22. After that, when one layer of aluminum is deposited, the TMA, methane, and carrier gas remaining without adhering in the chamber 20 are exhausted by the exhaust unit 36.

Next, water vapor (H ₂ O) is supplied from the gas supply unit 34, and one layer of oxygen atoms is bonded onto one layer of aluminum to form one layer of aluminum oxide. Thereafter, excess water vapor and methane generated by the reaction are exhausted. Thus, one layer of aluminum oxide can be formed in one cycle of TMA input, exhaust, steam input, and exhaust. Therefore, by repeating this cycle, aluminum oxide as the protective film 120 can be formed in a desired film thickness. That is, since aluminum oxide can be formed in a thickness of about 0.1 nm in one cycle, if a film thickness of 10 nm is desired, 100 cycles may be taken as one sequence.

  In this embodiment, since the facing surface 74 of the facing member 30 is disposed on the electrode layer 118 of the substrate 110 at a distance of 20 μm, even if the number of cycles is 500 cycles, the aluminum oxide film is affected by diffusion. The upper limit of the thickness is 25 nm.

Next, a planarization layer 122 is formed over the protective film 120.
The planarization layer 122 has a function of planarizing unevenness caused by the partition walls 112 for individually forming the organic EL elements so that the sealing layer 124 can be formed flat. A planarization layer 122 is formed by applying a resin or the like on the protective film 120 using a spin coating method and curing by heating. In addition, as a material which comprises the planarization layer 122, photosensitive organic resin materials, such as acrylic resin, a polyimide-type resin, and a novolak-type resin, are mentioned, for example. Of these, acrylic resins are preferred from the viewpoints of being inexpensive and being colorless and transparent.

Finally, the sealing layer 124 is formed over the planarization layer 122.
The sealing layer 124 is a substrate such as glass, for example, and is bonded onto the planarizing layer 122 with a sealing resin such as an ultraviolet curable resin or a thermosetting epoxy resin.
Through the above steps, the organic EL element 100 having the protective film 120 made of aluminum oxide or the like that suppresses infiltration of moisture into the light emitting portion 116 can be formed.

  As described above, the atomic layer deposition apparatus 10 according to this embodiment includes the mounting surface 26 of the mounting table 24 on which the substrate 22 is mounted and the facing surfaces 70 and 74 of the facing member 30 disposed on the substrate. Are arranged at a plurality of different distances. Therefore, the thickness of the atomic layer deposition due to the difference in the diffusion distance of the gas that generates the atomic layer deposition depends on the distance between the mounting surface 26 and the opposing surfaces 70 and 74. Can be controlled. That is, by reducing the distance between the mounting surface 26 and the opposing surfaces 70 and 74, the gas diffusion distance can be shortened and the film thickness can be reduced. Conversely, the distance between the mounting surface and the opposing surface can be reduced. By increasing the length, the gas diffusion distance can be increased and the film thickness can be increased. Therefore, by providing a plurality of distances between the mounting surface 26 and the opposing surfaces 70 and 74, atomic layer deposition having a plurality of film thicknesses can be formed in one film forming sequence.

  Moreover, since the front-end | tip part 72 of the convex part 32 is also made into the opposing surface 74, since the opposing surface 30 and 74 from which the distance with the mounting surface 26 differs in the opposing member 30 can be provided, it has several film thickness. Atomic layer deposition can be deposited.

  Moreover, since the distance adjustment means which can adjust the distance of the opposing surfaces 70 and 74 of the opposing member 30 and the mounting surface 26 of the mounting table 24 can adjust the distance of an opposing surface and a mounting surface, it is desired. An atomic layer deposition having a thickness of 5 nm can be formed.

  In addition, since the distance adjusting unit includes the measuring unit 38 that measures the distance between the facing member 30 and the mounting table 24, the distance between the facing member and the mounting table can be adjusted to a desired value. An atomic layer deposition having a thickness can be deposited.

  Further, by adjusting the distance between the facing surfaces 70 and 74 and the surface to be processed 82 within the range of 5 μm or more and 40 μm or less, the inflow and diffusion distance of the gas for forming the atomic layer deposition is adjusted, and the atomic layer Since the deposition thickness can be controlled, atomic layer deposition with different thicknesses can be formed with high accuracy.

<Second Embodiment>
Next, the atomic layer deposition apparatus 10 provided with the opposing member 30a according to the second embodiment of the present invention will be described with reference to FIG.
FIG. 5 is a schematic cross-sectional view showing the configuration of the facing member according to the second embodiment of the present invention.

  As shown in FIG. 5, the opposing member 30 a according to the second embodiment is provided with convex portions 32 and 32 a having a plurality of heights on the side facing the substrate 22. The convex portion 32a has an opposing surface 74a that opposes the placement surface 26 of the tip end portion 72a of the convex portion 32a or the substrate 22, and the distance between the opposing surface 74a and the surface to be processed 82 of the substrate 22 is G2. Have been placed. Therefore, the opposing member 30a has a distance G1 between the opposing surface 74 and the processing surface 82, a distance G2 between the opposing surface 74a and the processing surface 82, and a distance G3 between the opposing surface 70 and the processing surface 82. A region having three distances from the processing surface 82 of the substrate 22 is provided.

  With this configuration, there are three distances between the facing surfaces 70, 74, and 74a and the surface to be processed 82, so that the inflow and diffusion distance of the gas for forming the atomic layer deposition can be adjusted. The atomic layer deposition having two film thicknesses can be formed in one sequence.

Next, an organic EL device 200 manufactured by the atomic layer deposition apparatus 10 including the facing member 30a according to the second embodiment of the present invention will be described with reference to FIG. In the present embodiment, the organic EL device 200 having a top emission structure will be described as an example.
FIG. 6 is a schematic cross-sectional view showing the configuration of the organic EL device.

  The organic EL device 200 includes a red pixel 208R that emits red light, a green pixel 208G that emits green light, and a blue pixel 208B that emits blue light. As shown in FIG. , Reflective layer 212, electrode layers 214 (214R, 214G, 214B) serving as anodes having different thicknesses, light-emitting portion 218, electrode layer 220 serving as a cathode, protective film 222, planarizing layer 224, sealing layer 226, color filter 228 (228R, 228G, 228B) and a counter substrate 232 are stacked in this order.

  The light emitting unit 218 emits light when a voltage is applied between the electrode layers (214, 220) of the anode and the cathode. Note that light emitted to the substrate 210 side is reflected by the reflective layer 212 and emitted to the color filter 228 side.

  Each pixel 208 (208R, 208G, 208B) has an electrode layer 214 (214R serving as an anode) that constitutes each pixel 208 in order to reduce emission of light emitted from the light emitting unit 218 to the other pixels 208. 214G, 214B) and color filters 228 (228R, 228G, 228B), partition walls 216, 230 are formed.

  Each color filter 228 (228R, 228G, 228B) is mixed with a pigment that matches the emission color of each pixel 208. In the red color filter 228R, a material that transmits light in a wavelength range corresponding to red light, that is, light in a wavelength range of approximately 610 nm to approximately 750 nm, and absorbs light in other wavelength ranges is dispersed. . In the green color filter 228G, a material that transmits light in a wavelength range corresponding to green light, that is, light in a wavelength range of approximately 500 nm to approximately 560 nm and absorbs light in other wavelength ranges is dispersed. . In the blue color filter 228B, a material that transmits light in a wavelength range corresponding to blue light, that is, light in a wavelength range of approximately 435 nm to approximately 480 nm and absorbs light in other wavelength ranges is dispersed. .

  The film thickness of the electrode layer 214 (214R, 214G, 214B) serving as the anode differs depending on the emission color of the pixel 208. Specifically, the thickness of the electrode layer 214R of the red pixel 208R is approximately 100 nm, the thickness of the electrode layer 214G of the green pixel 208G is approximately 60 nm, and the thickness of the electrode layer 214B of the blue pixel 208B is approximately 20 nm. It is. Such a difference in film thickness is set in order to emphasize light having a predetermined wavelength distribution by using resonance (resonance phenomenon). That is, the sum of the film thickness of the electrode layer 214 of each pixel 208 and the film thickness of the light emitting portion 218 is set to have a length suitable for emphasizing the light in the wavelength range that each pixel 208 should emit. ing.

  Here, formation of electrode layers 214 (214R, 214G, 214B) having different film thicknesses is generally performed three times in total by a photolithography process, specifically, a combination of the ITO thin film forming process and the patterning process. Repeat to form. Therefore, there are problems in terms of manufacturing cost and yield.

  However, in this embodiment, electrodes having three different film thicknesses are formed by the atomic layer deposition film forming method using the atomic layer deposition apparatus 10 provided with the facing member 30a having the distances from the three different surfaces to be processed 82. The layer 214 (214R, 214G, 214B) can be formed simultaneously in one film forming sequence. That is, the convex portion 32 having the shortest distance from the surface to be processed 82 is disposed at a position where the electrode layer 214B is formed, and the convex portion 32a which is shortened next is disposed at the position where the electrode layer 214G is formed, By disposing the long facing surface 70 at a position where the electrode layer 214R is formed, three different film thicknesses can be simultaneously formed in one film formation sequence. Therefore, it is very effective in reducing the manufacturing cost and improving the yield.

<Third Embodiment>
Next, an atomic layer deposition apparatus 10a according to a third embodiment of the present invention will be described with reference to FIG.
FIG. 7 is a schematic diagram showing a configuration of an atomic layer deposition apparatus according to the third embodiment of the present invention.
Hereinafter, an atomic layer deposition apparatus 10a according to the third embodiment will be described focusing on differences from the atomic layer deposition apparatus 10 of the first embodiment described above. Moreover, the same code | symbol is attached | subjected to the same structure and the description is abbreviate | omitted about the same matter.

The atomic layer deposition apparatus 10a according to the third embodiment includes an alignment station 1000 that aligns and sets the substrate 22 and the opposing member 30 on the mounting table 24a, and an atomic layer deposition unit 3000 that sets the set substrate 22 and the opposing member 30. And an atomic layer deposition unit 3000 for depositing an atomic layer on the substrate 22.
In the atomic layer deposition apparatus 10a, in the alignment station 1000, the information data of the camera 62 is processed by the measuring unit 38, and the alignment and height adjustment of the substrate 22 and the facing member 30 are performed based on the calculated data. Set at 31. Next, the substrate 22 and the facing member 30 set by the transfer robot 2000 are transferred to the atomic layer deposition unit 3000. Thereafter, atomic layer deposition is performed in the atomic layer deposition unit 3000.
With such a configuration, the chamber 20 includes a mechanism for performing alignment and height adjustment between the substrate 22 and the opposing member 30 in the chamber 20 performed in the atomic layer deposition apparatus 10 of the first embodiment. Since it becomes unnecessary, the chamber 20 can be reduced in size, and the amount of supplied gas can be reduced and the exhaust efficiency can be improved.

  DESCRIPTION OF SYMBOLS 10,10a ... Atomic layer deposition apparatus, 20 ... Chamber, 22 ... Substrate, 24 ... Mounting table, 26 ... Mounting surface, 28 ... Heater, 30 ... Opposing member, 32 ... Convex part, 34 ... Gas supply part, 36 ... Exhaust section, 38 ... measuring section, 40 ... slider, 42 ... motor, 44 ... control section, 46 ... sealing section, 50 ... holding section, 52 ... slider, 54 ... motor, 56 ... control section, 58 ... sealing section, 60 DESCRIPTION OF SYMBOLS ... Window part, 62 ... Camera, 70 ... Opposite surface, 72 ... Tip part, 74 ... Opposite surface, 80 ... Partition, 82 ... Surface to be treated, 100 ... Organic EL element, 200 ... Organic EL device, 1000 ... Alignment station, 2000: transfer robot, 3000: atomic layer deposition unit, G1, G2, G3: distance.

Claims (7)

A mounting table having a mounting surface;
Disposed opposite to the placement surface, and the opposing member having a surface facing multiple,
Equipped with a,
The plurality of facing surfaces include a first facing surface, a second facing surface, and a third facing surface,
A first distance between the first facing surface and the placement surface, a second distance between the second facing surface and the placement surface, and a third distance between the third facing surface and the placement surface. The atomic layer deposition apparatus , wherein the third distances between the mounting surfaces are different from each other . A mounting table having a mounting surface;
An opposing member disposed opposite to the placement surface and having a plurality of opposing surfaces;
Distance adjusting means capable of adjusting the distance between the facing member and the mounting table;
With
The plurality of facing surfaces include a first facing surface and a second facing surface,
The first distance between the first facing surface and the placement surface is different from the second distance between the second facing surface and the placement surface,
The atomic layer deposition apparatus, wherein the distance adjusting unit includes a measuring unit that measures a distance between the facing member and the mounting table. The facing surface, the atomic layer deposition apparatus according to claim 1 or 2, characterized in that it comprises a distal portion of the protrusion. The atomic layer deposition apparatus according to claim 1 , further comprising a distance adjusting unit capable of adjusting a distance between the facing member and the mounting table. The atomic layer deposition apparatus according to claim 4 , wherein the distance adjusting unit includes a measurement unit that measures a distance between the facing member and the mounting table.   A film forming method for atomic layer deposition, wherein the film is formed by the atomic layer deposition apparatus according to claim 1. The atomic layer according to claim 6, wherein a distance between the facing surface closest to the processing surface and the processing surface among the plurality of facing surfaces of the facing member is in a range of 5 μm to 40 μm. Deposition method.

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