JP6570966B2 - 温度測定マスクおよび温度測定方法 - Google Patents
温度測定マスクおよび温度測定方法 Download PDFInfo
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- JP6570966B2 JP6570966B2 JP2015211020A JP2015211020A JP6570966B2 JP 6570966 B2 JP6570966 B2 JP 6570966B2 JP 2015211020 A JP2015211020 A JP 2015211020A JP 2015211020 A JP2015211020 A JP 2015211020A JP 6570966 B2 JP6570966 B2 JP 6570966B2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/14—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
- H02J7/34—Parallel operation in networks using both storage and other DC sources, e.g. providing buffering
- H02J7/35—Parallel operation in networks using both storage and other DC sources, e.g. providing buffering with light sensitive cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/026—Shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30433—System calibration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31793—Problems associated with lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/56—Power conversion systems, e.g. maximum power point trackers
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Electron Beam Exposure (AREA)
Description
(温度測定マスク)
先ず、第1の実施形態として、第1の光電池を備えた温度測定マスクの実施形態について説明する。図1は、第1の実施形態を示す温度測定マスク1の平面図である。図2は、 第1の実施形態を示す温度測定マスク1の断面図すなわち図1のII−II断面図である。
次に、図1の温度測定マスク1を適用した温度測定方法について説明する。図4は、第1の実施形態を示す温度測定方法のフローチャートである。
次に、第1の実施形態の第1の変形例として、太陽電池14を基板10と熱的に分離した温度測定マスク1の例について説明する。なお、第1の変形例の説明において、図1〜図7に対応する構成については同一の符号を用いて重複した説明を省略する。図9は、第1の実施形態の第1の変形例を示す温度測定マスク1の断面図である。
次に、第1の実施形態の第2の変形例として、基板10に対する太陽電池14の位置を上下で反転させた温度測定マスク1の例について説明する。なお、第2の変形例の説明において、図1〜図7に対応する構成については同一の符号を用いて重複した説明を省略する。図10は、第1の実施形態の第2の変形例を示す温度測定マスク1の断面図である。
次に、第1の実施形態の第3の変形例として、太陽電池14を貫通孔に配置した温度測定マスク1の例について説明する。なお、第3の変形例の説明において、図1〜図7に対応する構成については同一の符号を用いて重複した説明を省略する。図11は、第1の実施形態の第3の変形例を示す温度測定マスク1の断面図である。
次に、第1の実施形態の第4の変形例として、太陽電池14と回路基板12とを接合しない温度測定マスク1の例について説明する。なお、第4の変形例の説明において、図1〜図7に対応する構成については同一の符号を用いて重複した説明を省略する。図12は、第1の実施形態の第4の変形例を示す温度測定マスクの断面図である。
次に、第1の実施形態の第5の変形例として、図6と異なる電子ビーム描画装置4を用いた温度測定方法の例について説明する。なお、第5の変形例の説明において、図1〜図7に対応する構成については同一の符号を用いて重複した説明を省略する。図13は、第1の実施形態の第5の変形例を示す温度測定方法に用いる電子ビーム描画装置4の平面図である。
次に、第2の実施形態として、2つの光電池を備えた温度測定マスクの実施形態について説明する。なお、第2の実施形態の説明において、第1の実施形態に対応する構成については同一の符号を用いて重複した説明を省略する。図14は、第2の実施形態を示す温度測定マスク1の平面図である。図15は、第2の実施形態を示す温度測定マスクの断面図すなわち図14のXV−XV断面図である。
10 基板
11 温度センサ
12 回路基板
121A 測定回路
121B MPU
13 二次電池
14 第1の太陽電池
Claims (4)
- 基板と、
前記基板に設けられ、荷電粒子ビーム描画装置の内部の温度を検知可能な温度センサと、
前記基板に設けられ、前記温度センサを用いて前記温度を測定する測定回路と、測定された前記温度の測定データを記憶する記憶装置を有する回路基板と、
前記基板に設けられ、前記回路に電力を供給する二次電池と、
前記基板に設けられ、エネルギビームが照射されることで電力を発生させ前記二次電池を充電する光電池と、を備え、
前記光電池は、前記基板の厚み方向において重なり合うように前記回路基板と接合され、かつ、前記基板と熱的に分離されている温度測定マスク。 - 前記エネルギビームは、前記荷電粒子ビーム描画装置において照射される荷電粒子ビームであり、
さらに前記光電池をシールドするシールド部を備える請求項1に記載の温度測定マスク。 - 温度センサと、回路を有する回路基板と、二次電池と、光電池とが設けられた基板を有し、前記光電池は、前記基板の厚み方向において重なり合うように前記回路基板と接合され、かつ、前記基板と熱的に分離されている温度測定マスクを荷電粒子ビーム描画装置に搬入し、
前記光電池にエネルギビームを照射し電力を発生させて前記二次電池を充電し、
前記温度センサにより前記荷電粒子ビーム描画装置内の温度を検知して温度データ信号を出力し、
前記回路を前記二次電池の電力により動作させて前記温度データ信号を受信する温度測定方法。 - 前記エネルギビームは、前記荷電粒子ビーム描画装置において照射される荷電粒子ビームであり、
前記光電池はシールドされる請求項3に記載の温度測定方法。
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015211020A JP6570966B2 (ja) | 2015-10-27 | 2015-10-27 | 温度測定マスクおよび温度測定方法 |
| TW105132950A TW201725368A (zh) | 2015-10-27 | 2016-10-13 | 溫度測量遮罩以及溫度測量方法 |
| KR1020160137437A KR101850620B1 (ko) | 2015-10-27 | 2016-10-21 | 온도 측정 마스크 및 온도 측정 방법 |
| US15/333,966 US10670472B2 (en) | 2015-10-27 | 2016-10-25 | Temperature measuring mask and temperature measuring method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015211020A JP6570966B2 (ja) | 2015-10-27 | 2015-10-27 | 温度測定マスクおよび温度測定方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017084945A JP2017084945A (ja) | 2017-05-18 |
| JP6570966B2 true JP6570966B2 (ja) | 2019-09-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015211020A Active JP6570966B2 (ja) | 2015-10-27 | 2015-10-27 | 温度測定マスクおよび温度測定方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10670472B2 (ja) |
| JP (1) | JP6570966B2 (ja) |
| KR (1) | KR101850620B1 (ja) |
| TW (1) | TW201725368A (ja) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10615744B2 (en) * | 2017-08-13 | 2020-04-07 | The Aerospace Corporation | Intelligent solar cell carrier system for flight and laboratory measurement applications |
| KR102722920B1 (ko) * | 2019-04-18 | 2024-10-28 | 삼성전자주식회사 | 진공 챔버용 계측 장치, 및 그 계측 장치를 포함한 계측 시스템 |
| CN115362355B (zh) * | 2020-03-30 | 2026-01-23 | 艾思玛太阳能技术股份公司 | 用于温度测量的设备和用于电流求取的设备 |
| JP7830371B2 (ja) * | 2023-02-22 | 2026-03-16 | 株式会社ニューフレアテクノロジー | 情報収集基板、基板処理装置、電子ビーム描画装置および電子ビーム描画装置の基板処理方法 |
| TWI878825B (zh) * | 2023-03-10 | 2025-04-01 | 微程式資訊股份有限公司 | 可模擬光罩之感測總成 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60189272A (ja) * | 1984-03-07 | 1985-09-26 | Sumitomo Electric Ind Ltd | 太陽電池 |
| JP3203788B2 (ja) * | 1992-07-24 | 2001-08-27 | オムロン株式会社 | 物理量センサ及びその製造方法 |
| JPH10274676A (ja) | 1997-03-28 | 1998-10-13 | N T T Advance Technol Kk | X線強度分布測定装置 |
| US6297984B1 (en) * | 1999-12-29 | 2001-10-02 | Tower Semiconductor Ltd. | Structure and method for protecting integrated circuits during plasma processing |
| JP2001338868A (ja) * | 2000-03-24 | 2001-12-07 | Nikon Corp | 照度計測装置及び露光装置 |
| JP2007266079A (ja) * | 2006-03-27 | 2007-10-11 | Nikon Corp | 変形量計測装置、調整方法及び判定方法 |
| US7628493B2 (en) | 2006-04-18 | 2009-12-08 | Xerox Corporation | Projector based on tunable individually-addressable Fabry-Perot filters |
| JP2009244174A (ja) * | 2008-03-31 | 2009-10-22 | Tokyo Electron Ltd | ウェハ型温度計、温度測定装置、熱処理装置および温度測定方法 |
| US9572532B2 (en) | 2009-01-23 | 2017-02-21 | Qualcomm Incorporated | Button sensor |
| JP2011129673A (ja) * | 2009-12-17 | 2011-06-30 | Nuflare Technology Inc | 荷電粒子ビーム描画装置及び基板配置室の温度調整方法 |
| JP5476114B2 (ja) | 2009-12-18 | 2014-04-23 | 東京エレクトロン株式会社 | 温度測定用装置 |
| JP2011250628A (ja) * | 2010-05-28 | 2011-12-08 | Sony Corp | 二次電池保護回路及びハイブリッド電源装置 |
| JP5998449B2 (ja) * | 2011-10-04 | 2016-09-28 | 大日本印刷株式会社 | アンケート集計用検知システム |
| JP2014168031A (ja) * | 2013-01-30 | 2014-09-11 | Canon Inc | リソグラフィ装置、リソグラフィ方法及び物品製造方法 |
| KR101402587B1 (ko) | 2013-02-19 | 2014-06-02 | 한서대학교 산학협력단 | 진단 부하를 이용하는 태양전지 스트링 고장 진단 장치 |
| US9620400B2 (en) * | 2013-12-21 | 2017-04-11 | Kla-Tencor Corporation | Position sensitive substrate device |
-
2015
- 2015-10-27 JP JP2015211020A patent/JP6570966B2/ja active Active
-
2016
- 2016-10-13 TW TW105132950A patent/TW201725368A/zh unknown
- 2016-10-21 KR KR1020160137437A patent/KR101850620B1/ko not_active Expired - Fee Related
- 2016-10-25 US US15/333,966 patent/US10670472B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201725368A (zh) | 2017-07-16 |
| KR101850620B1 (ko) | 2018-04-19 |
| KR20170049403A (ko) | 2017-05-10 |
| JP2017084945A (ja) | 2017-05-18 |
| US10670472B2 (en) | 2020-06-02 |
| US20170115167A1 (en) | 2017-04-27 |
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