JP6579233B2 - Imprint mold and imprint method - Google Patents

Description

  The present invention relates to an imprint mold having a concavo-convex structure and an imprint method using the mold.

In recent years, a pattern forming technique using an imprint method has attracted attention as a fine pattern forming technique that replaces the photolithography technique. The imprint method is a pattern forming technique in which a fine structure is transferred at an equal magnification by using a mold member (mold) having a fine concavo-convex structure and transferring the concavo-convex structure to a molding resin. For example, in an imprint method using a photocurable resin as a molding resin, droplets of the photocurable resin are supplied to the surface of the transfer substrate, and the mold having the desired concavo-convex structure and the transfer substrate are brought to a predetermined distance. The concavo-convex structure is filled with a photocurable resin, and in this state, light is irradiated from the mold side to cure the photocurable resin. A pattern structure having an inverted uneven structure (uneven pattern) is formed. Further, the transfer substrate is etched using the pattern structure as an etching resist.
The mold used for the imprinting method usually applies an electron beam sensitive resist to a mold substrate, forms an electron beam on the resist to form a resist pattern, and uses the resist pattern as an etching mask. It is manufactured by etching the material to form a concavo-convex pattern. However, the electron beam lithography using the electron beam drawing has a problem that the cost for manufacturing the mold increases because an expensive drawing apparatus is used and drawing takes a long time. In addition, if a foreign object is mixed between the mold and the transfer substrate in imprinting, both of them will be damaged greatly, making it difficult to reuse the damaged mold. There was a problem of loss.

Therefore, a mold manufactured by electron beam lithography is used as a master mold, and a replica mold (hereinafter referred to as a replica mold) is manufactured from the master mold by an imprint method. The replica mold is used to imprint onto a transfer substrate such as a wafer substrate. A pattern structure is produced by a printing method.
In the manufacture of a master mold by electron beam lithography as described above, electron beam drawing is performed based on predesigned design coordinates, but pattern coordinates in a replica mold manufactured using a master mold are generated during imprinting. Due to the error factor, there is a deviation from the original design coordinates. Further, the pattern coordinates in the pattern structure formed on the transfer substrate such as a wafer substrate using the replica mold are also shifted from the initial design coordinates due to an error factor generated during imprinting.

  In the production of a high-precision replica mold using a master mold and the production of a high-precision pattern structure using a replica mold, it is possible to grasp such a deviation and reflect it in the original design coordinates. In the imprinting, a desired deformation is caused in the mold to correct it. And as a means of grasping the situation of the deviation as described above, a plurality of measurement marks are provided in advance in the master mold, and the measurement marks (measurement marks provided in the master mold) formed in the replica mold produced using the master mold By measuring the measurement marks (uneven structure in which the unevenness of the measurement mark provided in the replica mold is inverted) formed on the pattern structure produced using the replica mold. The direction is detected (Patent Documents 1 and 2).

JP 2010-278041 A JP 2011-61025 A

However, due to error factors that occur during imprinting of replica mold production using the master mold, the measurement marks formed on the replica mold themselves undergo deformation such as thickening, thinning, bending, etc. Similarly, the pattern using the replica mold Due to error factors that occur during imprinting of the structure fabrication, the measurement marks themselves formed on the pattern structure are deformed, and there is a problem that it is difficult to accurately detect the size and direction of the deviation. Examples of the error factors include deformation that occurs in the resin layer when the imprint mold and the resin layer are released. In particular, the resin layer portion where release is started and the resin that is released last. Deformation tends to be significant at the layer site. Also, for the purpose of improving releasability, when the mold and / or transfer substrate is released in a deformed state, for example, when the transfer substrate is released in a slightly convex state on the mold side, When the transfer substrate is in a normal state after release, deformation or displacement occurs in the resin layer, which is also cited as an error factor.
The present invention has been made in view of the above circumstances, and for imprinting that can suppress deformation that occurs in the resin layer when the mold and the resin layer are released, and can form a measurement mark with high accuracy. An object of the present invention is to provide a mold and an imprint method using such a mold.

In order to achieve such an object, the imprint mold of the present invention is set on a base material, one surface of the base material, and includes an uneven structure region including an uneven structure, and the uneven structure region. A measurement mark used for detecting the magnitude and direction of deviation from the design coordinates of the pattern in the pattern structure formed corresponding to the concavo-convex structure. A measurement mark structure which is a structure used for forming, a dummy pattern region set so as to surround the measurement mark structure with a predetermined distance, and a dummy concavity and convexity located in the dummy pattern region It includes the structures, the plan view shape of the inner circumference and the outer circumference of the dummy pattern region, and the measuring mark structure is a four symmetrical, four-axis of the inner periphery of the plan view shape And four axes of the plan view shape of the four axes and the measurement mark structures plan view shape of the outer peripheral is configured as match any.
As another aspect of the present invention, the dummy concavo-convex structure is configured to have a plurality of dot-shaped concave portions or convex portions, or line / space-shaped concave portions or convex portions.
As another aspect of the present invention, the dot-shaped concave portions or convex portions, or the line / space-shaped concave portions or convex portions are arranged so as to form a dense gradation.
As another aspect of the present invention, the dummy concavo-convex structure is configured to have a plurality of dot-shaped concave portions or convex portions and line / space-shaped concave portions or convex portions.

  The imprint method according to the present invention includes a resin supply step of supplying a molding resin to at least one of the above-mentioned imprint mold and transfer substrate, and the imprint mold and the transfer substrate in close proximity to each other for the imprint. A contact step in which the molding resin is developed between the mold and the transfer substrate to form a molding resin layer, and a curing step in which the molding resin layer is cured to transfer the concavo-convex structure. A mold release step of separating the transfer resin layer and the imprint mold to place the pattern structure as the transfer resin layer on the transfer substrate; and after the mold release step, the pattern And a detection step of detecting the position of the measurement mark formed together with the structure as necessary.

The imprint mold of the present invention suppresses deformation that occurs in the resin layer when the mold and the resin layer are released, and can form a measurement mark with high accuracy. Thus, the pattern structure using the mold It is possible to accurately detect the size and direction of pattern misalignment during formation, making it easy to modify design coordinates, etc. in mold design. Correction control is easy.
The imprint method of the present invention can stably produce a highly accurate pattern structure.

FIG. 1 is a side view for explaining an embodiment of an imprint mold of the present invention. FIG. 2 is a partially enlarged plan view of the imprint mold shown in FIG. FIG. 3 is an enlarged plan view of an intersecting portion of the non-main pattern region in FIG. FIG. 4 is an enlarged view of the measurement region shown in FIG. FIG. 5 is a plan view showing another example of the measurement mark structure. FIG. 6 is a plan view showing another example of the measurement mark structure. FIG. 7 is a plan view showing another example of the measurement mark structure. FIG. 8 is a plan view showing another example of the dummy concavo-convex structure. FIG. 9 is a plan view showing another example of the dummy concavo-convex structure. FIG. 10 is a plan view showing another example of the dummy concavo-convex structure. FIG. 11 is a plan view showing another example of the dummy concavo-convex structure. FIG. 12 is a plan view showing another example of the dummy concavo-convex structure. 13A to 13D are process diagrams for explaining an embodiment of the imprint method of the present invention. FIG. 14 is a diagram for explaining detection of a measurement mark formed together with a pattern structure by imprinting using the mold of the present invention. FIG. 15 is a plan view showing the positional relationship between the dummy pattern region and the measurement mark structure in the comparative example.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
Note that the drawings are schematic or conceptual, and the dimensions of each member, the ratio of sizes between the members, etc. are not necessarily the same as the actual ones, and represent the same members. However, in some cases, the dimensions and ratios may be different depending on the drawing.

[Imprint mold]
FIG. 1 is a side view for explaining an embodiment of an imprint mold of the present invention, and FIG. 2 is a partially enlarged plan view of the imprint mold shown in FIG. 1 and 2, the imprint mold 1 includes a base material 2, and a concavo-convex structure region A and a non-concave structure region B set on one surface 2 a of the base material 2. The uneven structure region A has an uneven structure (not shown) for forming a desired pattern structure by imprinting. In the uneven structure area A, a main pattern area 4 and a non-main pattern area 5 are set. The main pattern region 4 is a region having an uneven structure for forming a pattern structure to be formed. In the illustrated example, the main pattern region 4 is set in a grid shape, and the non-main pattern region 5 is set in a lattice shape vertically and horizontally in the gap portion of each main pattern region 4. In FIG. 2, the boundary between the main pattern region 4 and the non-main pattern region 5 is indicated by a chain line. In this embodiment, a measurement region is set in the non-main pattern region 5 in the concavo-convex structure region A.

FIG. 3 is an enlarged plan view of an intersecting portion of the non-main pattern region 5 in FIG. As shown in FIG. 3, the measurement region 6 is located at the intersection of the non-main pattern region 5 set in a lattice shape. Note that the position of the measurement region 6 is not limited to the intersection of the non-main pattern region 5.
In FIG. 3, the outer periphery of the measurement region 6 is indicated by a two-dot chain line. This measurement region 6 has a measurement mark structure 7 and is also provided with a dummy pattern region 8 (indicated by hatching in FIG. 3) so as to surround the measurement mark structure 7 with a desired distance therebetween. , The inner periphery of the dummy pattern region 8 is indicated by a one-dot chain line). And the measurement area | region 6 has the dummy uneven structure 9 which is not the structure for measurement marks in this dummy pattern area | region 8. FIG. Note that the position of the measurement region 6 set in the concavo-convex structure region A of the mold 1 is not limited to the above position, but the main pattern region 4 and the non-main pattern region 5 set in the concavo-convex structure region A. The number can be set as appropriate in consideration of the number, size, and the concavo-convex structure provided in the main pattern region 4. Further, the number of measurement areas 6 to be set is also provided in the number and size of the main pattern areas 4 and non-main pattern areas 5 set in the concavo-convex structure area A, and in the main pattern areas 4 as described above. It can be appropriately set in consideration of the uneven structure.

FIG. 4 is an enlarged view of the measurement region 6 shown in FIG. As shown in FIG. 4, the measurement mark structure 7 includes four concave portions 7a having a rectangular shape in plan view, or four convex portions 7a having a rectangular shape in plan view. The planar structure of the structural body 7 is rotationally symmetric having a four-fold axis a with a constant angle of 90 °. The dimensions of the rectangular concave portion 7a and the rectangular convex portion 7a are equal to or higher than the resolution of the position detection device used when detecting the measurement mark formed by the measurement mark structure 7, and are within the visual field. For example, when 30 μm is set as a general visual field, the longitudinal direction is 1 to 20 μm, preferably about 5 to 15 μm, and the width direction is 0.1 to 3 μm, preferably 0.3 to It can be about 1 μm. In particular, it is preferable that the rectangular concave portion 7a and the rectangular convex portion 7a have smaller dimensions in the width direction because they are less susceptible to deformation at the time of mold release. Therefore, it is preferable to set the dimension in the width direction in consideration of this point. Further, the depth of the rectangular recess 7a and the height of the rectangular protrusion 7a are appropriately set in consideration of the depth of the recess of the concavo-convex structure provided in the main pattern region 4 or the height of the protrusion. be able to.
The dummy pattern region 8 set so as to surround the measurement mark structure 7 with a desired distance therebetween has a square outer shape (indicated by a two-dot chain line) and an inner peripheral shape (indicated by a one-dot chain line). The plan view shape of the dummy pattern region 8 is also rotationally symmetric having a 4-fold axis a with a constant angle of 90 °. In the example shown in the drawing, the dummy concavo-convex structure 9 positioned in the dummy pattern region 8 has a plurality of dot-shaped concave portions or convex portions arranged at a predetermined pitch. When the measurement mark structure 7 includes four rectangular recesses 7a, the dummy uneven structure 9 includes a plurality of dot-shaped recesses, and the measurement mark structure 7 includes four rectangular protrusions 7a. In this case, the dummy concavo-convex structure 9 includes a plurality of dot-shaped convex portions. In FIG. 4, a part of the dummy uneven structure 9 located in the dummy pattern region 8 is extracted and enlarged.

  Such a dummy concavo-convex structure 9 has an effect of suppressing deformation such as thickening, thinning, bending, etc. of the measurement mark formed by the measurement mark structure 7 in the release of the molding resin and the mold. . The outer dimension L1 (length of the outer periphery of the dummy pattern region 8) of the measurement region 6 and the length L2 of the inner periphery of the dummy pattern region 8 are set so that the dummy uneven structure 9 exhibits such an effect. The existence width of the dummy concavo-convex structure 9 that exhibits the effect is preferably 10 μm or more. On the other hand, as described above, also from the viewpoint of detection of the measurement mark, the outer dimension of the dummy pattern region 8 where the dummy uneven structure 9 exists is limited. For this reason, for example, when general 30 micrometers is set as a visual field of a position detection apparatus, the external dimension L1 can be suitably set in the range of about 27-100 micrometers. If the outer dimension L1 is less than 27 μm, the area that can be referred to when detecting the position becomes small and the error becomes large, or the effect of the dummy uneven structure 9 becomes insufficient. Further, the upper limit of the outer dimension L1 is not particularly limited, but 100 μm or less is appropriate in order to prevent the influence that the area of the main pattern region decreases due to the enlargement of the measurement region 6. Further, the inner peripheral length L2 of the dummy pattern region 8 can be set to about 7 to 80 μm, for example. If the inner peripheral length L2 is less than 7 μm, the area that can be referred to in position detection becomes smaller and the error increases, and if it exceeds 80 μm, the effect of the dummy concavo-convex structure 9 becomes insufficient. The distance L3 between the inner periphery of the dummy pattern region 8 and the measurement mark structure 7 can be set as appropriate within a range of 2 μm or more. If the distance L3 is less than 2 μm, the position detection device may not be able to accurately capture the reference area. The upper limit of the distance L3 can be appropriately set according to the size of the measurement mark structure 7 and the inner peripheral length L2. In the example shown in FIG. 4, the four-fold axis a of the dummy pattern region 8 that is rotationally symmetric at a constant angle of 90 ° is the four-fold axis a of the measurement mark structure 7 at the constant angle of 90 °. However, the two may not match. If they do not match, the distance L3 between the inner periphery of the dummy pattern region 8 and the measurement mark structure 7 is not constant, and has a maximum value and a minimum value. The minimum value of the distance L3 can be set such that the area to be referred to is within a range where the position detection device can accurately capture, for example, 2 μm or more.

Further, the inner diameter of the dot-shaped concave portion constituting the dummy uneven structure 9 or the diameter of the convex portion and the arrangement pitch of the dot shape can suppress the deformation of the pattern structure formed by the measurement mark structure 7. Can be set as follows. For example, the inner diameter of the dot-shaped concave portion or the outer diameter of the convex portion can be appropriately set within the range of about 0.05 to 1 μm, and the arrangement pitch of the dot-shaped concave portion and convex portion can be set within the range of about 0.1 to 2 μm. These dimensions may be less than the resolution of the position detection device that detects the measurement mark formed by the measurement mark structure 7. There are no particular restrictions on the shape of the dot-shaped concave and convex portions in plan view, and a square shape, a circular shape, a shape in which the four corners of the square are rounded, and the like can be appropriately set.
As the material of the base material 2 of the imprint mold 1, when the molding resin used for imprinting is photo-curable, a material capable of transmitting irradiation light for curing them can be used. For example, in addition to glass such as quartz glass, silicate glass, calcium fluoride, magnesium fluoride, acrylic glass, sapphire, gallium nitride, resin such as polycarbonate, polystyrene, acrylic, polypropylene, or any of these Laminated materials can be used. Further, when the molding resin to be used is not photocurable, or when it is possible to irradiate light for curing the molding resin from the transfer substrate side, the mold 1 does not have to be light transmissive. In addition to the above materials, for example, metals such as silicon, nickel, titanium, and aluminum, alloys thereof, oxides, nitrides, or any laminated material thereof can be used.

In addition, a release agent layer may be provided on the surface of the concavo-convex structure region A of the mold 1 in order to facilitate the peeling between the resin to be molded and the mold.
The thickness of the base material 2 of the mold 1 can be set in consideration of the shape of the concavo-convex structure provided on the one surface 2a, the strength of the material, the suitability for handling, and the like, and is appropriately set, for example, in the range of about 300 μm to 10 mm. be able to. In addition, as for the base material 2, the surface of the uneven | corrugated structure area | region A may have a convex structure of 2 steps | paragraphs or more with respect to the surrounding non-uneven structure area B.
FIG. 5 is a plan view showing another example of the measurement mark structure 7. The measurement mark structure 7 shown in FIG. 5 includes one concave portion 7b having a cross shape in plan view or one convex portion 7b having a cross shape in plan view. The planar shape of the measurement mark structure 7 is rotationally symmetric having a four-fold axis a having a constant angle of 90 °. Further, the distance L3 between the inner periphery of the dummy pattern region 8 and the measurement mark structure 7 may be a distance from each end of the cross shape to the inner periphery of the nearest dummy pattern region 8 as shown in the figure. it can. The dimensions of the cross-shaped recess 7b and the cross-shaped protrusion 7b can be set as appropriate according to the dimensions of the measurement mark structure 7 shown in FIG. That is, the dimensions of the cross-shaped concave portion 7b and the cross-shaped convex portion 7b are equal to or higher than the resolution of the position detection device used when detecting the measurement mark formed by the measurement mark structure 7, and are within the field of view. For example, the width W may be about 0.1 to 5 μm. Further, the depth of the cross-shaped concave portion 7b and the height of the cross-shaped convex portion 7b are appropriately set in consideration of the depth of the concave portion of the concavo-convex structure included in the main pattern region 4 or the height of the convex portion. be able to.

  FIG. 6 is a plan view showing another example of the measurement mark structure 7. In the measurement mark structure 7 shown in FIG. 6, the four concave portions 7c having a rectangular shape in plan view or the four convex portions 7c having a rectangular shape in plan view are positioned on four sides of the square. Four measurement mark structures 7 ′ are arranged so as to be positioned at four corners of a larger square. The shape of the measurement mark structure 7 in plan view is also rotationally symmetric having a 4-fold axis a with a constant angle of 90 °. The distance L3 between the inner periphery of the dummy pattern region 8 and the measurement mark structure 7 is closest to the outer edge of the square region in which the four measurement mark structures 7 'are arranged as shown in the figure. It is possible to set the distance to the inner periphery of the dummy pattern region 8. The dimensions of the rectangular concave portion 7c and the rectangular convex portion 7c can be set as appropriate at or above the resolution of the position detection device used when detecting the measurement mark formed by the measurement mark structure 7. For example, the longitudinal direction may be about 2 to 7 μm and the width direction may be about 0.1 to 2 μm. Further, the depth of the rectangular concave portion 7c and the height of the rectangular convex portion 7c are appropriately set in consideration of the depth of the concave portion of the concavo-convex structure included in the main pattern region 4 or the height of the convex portion. be able to.

FIG. 7 is a plan view showing another example of the measurement mark structure 7. The measurement mark structure 7 shown in FIG. 7 has five concave portions 7d having a square shape in plan view, or five convex portions 7d having a square shape in plan view arranged in a cross shape. is there. The shape of the measurement mark structure 7 in plan view is also rotationally symmetric having a 4-fold axis a with a constant angle of 90 °. Further, the distance L3 between the inner periphery of the dummy pattern region 8 and the measurement mark structure 7 is, as shown in the figure, five square-shaped concave portions 7d or cross-shaped ends composed of convex portions 7d. The distance from the side to the inner periphery of the nearest dummy pattern region 8 can be set. The size of the square-shaped concave portion 7d or the square-shaped convex portion 7d is appropriately set to be equal to or higher than the resolution of the position detection device used when detecting the measurement mark formed by the measurement mark structure 7. For example, the length of one side may be about 1 to 5 μm. Further, the depth of the square-shaped concave portion 7d or the height of the square-shaped convex portion 7d is appropriately determined in consideration of the depth of the concave portion or the convex portion of the concavo-convex structure provided in the main pattern region 4. Can be set.
In addition, the planar view shape of the recessed part or convex part which comprises the structure 7 for measurement marks is not limited to rectangular shape or square shape.

FIG. 8 is a plan view showing another example of the dummy uneven structure 9. The dummy concavo-convex structure 9 shown in FIG. 8 has a plurality of dot-shaped concave portions or convex portions arranged so that the density decreases from the outer periphery to the inner periphery of the dummy pattern region 8 to form a sparse gradation. It is. In this case, the arrangement pitch of the dot shape can be appropriately set so as to form a dense gradation within a range of about 0.1 to 2 μm, for example. The density gradation may be either continuously changing or changing stepwise. The plan view shape of the dummy concavo-convex structure 9 in which the dot shapes are arranged so as to form a dense gradation is rotationally symmetric having a 4-fold axis a with a constant angle of 90 °. In FIG. 8, a part of the dummy concavo-convex structure 9 located in the dummy pattern region 8 is extracted and enlarged.
In the example shown in FIG. 8, the four-fold axis a of the plan view shape of the dummy pattern region 8 that is rotationally symmetric at a constant angle of 90 ° is the same as the four-fold axis a of the measurement mark structure 7 at a constant angle of 90 °. Although they match, they may not match. When the two do not match, the distance L3 (see FIG. 4) between the inner periphery of the dummy pattern region 8 and the measurement mark structure 7 is not constant and has a maximum value and a minimum value. The minimum value of the distance L3 can be set so that the area to be referenced is within a range where the position detection device can accurately capture, for example, 2 μm or more.

FIG. 9 is a plan view showing another example of the dummy uneven structure 9. In the example shown in FIG. 9, the dummy pattern region 8 is divided into a region 8 a located at the four corners of the measurement region 6 whose outer shape is square and another region 8 b. The boundary between the region 8a and the region 8b is indicated by a chain line. The dummy concavo-convex structure 9 is positioned in the region 8a, and the dummy concavo-convex structure 9a in which a plurality of dot-shaped concave portions or convex portions are arranged at a predetermined pitch; It consists of the dummy uneven structure 9b which has a convex part. The dot-shaped dummy uneven structure 9a can be the same as the dummy uneven structure 9 shown in FIG. Further, the line / space-shaped dummy uneven structure 9b has, for example, linear concave portions or convex portions with a predetermined width of about 0.05 to 1 μm arranged periodically with a constant pitch P in a direction perpendicular to the longitudinal direction. Shape. In the illustrated example, the longitudinal direction of the dummy concavo-convex structure 9b faces the direction of the measurement mark structure 7 in each region 8b. Therefore, the dummy concavo-convex structure 9b located in the region 8b opposed via the measurement mark structure 7 has the same longitudinal direction. The shape in plan view of the dummy concavo-convex structure 9 including the dummy concavo-convex structure 9a and the dummy concavo-convex structure 9b is rotationally symmetric having a four-fold axis a having a constant angle of 90 °. In FIG. 9, a part of the dummy concavo-convex structure 9a located in the region 8a is extracted and enlarged, and a part of the dummy concavo-convex structure 9b located in the region 8b is extracted and enlarged.
Further, in the example shown in FIG. 9, the four-fold axis a of the dummy pattern region 8 having a rotational symmetry of a certain angle of 90 ° in plan view is the four-fold axis a of the measurement mark structure 7 having a certain angle of 90 °. However, the two may not match. When the two do not match, the distance L3 (see FIG. 4) between the inner periphery of the dummy pattern region 8 and the measurement mark structure 7 is not constant and has a maximum value and a minimum value. The minimum value of the distance L3 can be set so that the area to be referenced is within a range where the position detection device can accurately capture, for example, 2 μm or more.
The dummy concavo-convex structure 9b may have a longitudinal direction perpendicular to the example shown in FIG. That is, in each region 8b, the longitudinal direction of the dummy concavo-convex structure 9b may face a direction parallel to the outer periphery of the measurement region 6 (the outer periphery of the dummy pattern region 8). Also in this case, the plan view shape of the dummy concavo-convex structure 9 is rotationally symmetric having a four-fold axis a having a constant angle of 90 °.

FIG. 10 is a plan view showing another example of the dummy uneven structure 9. The dummy concavo-convex structure 9 shown in FIG. 10 has a concave / convex portion having a line / space shape, and the longitudinal direction of the dummy concavo-convex structure 9 is constant (in the illustrated example, the direction along the vertical direction of the drawing). Facing. The line / space-shaped dummy concavo-convex structure 9 is, for example, a shape in which linear concave portions or convex portions having a predetermined width of about 0.05 to 1 μm are arranged with a constant pitch P in a direction orthogonal to the longitudinal direction. It is. Such a plan view shape of the dummy concavo-convex structure 9 is rotationally symmetric having a two-fold axis a having a constant angle of 180 °. Further, the dummy concavo-convex structure 9 may be arranged such that the line / space-shaped concave portions or convex portions have a dense gradation, and has a plurality of dot-shaped concave portions or convex portions in a partial region. It may be a thing. In FIG. 10, a part of the dummy concavo-convex structure 9 located in the dummy pattern region 8 is extracted and enlarged.
In the example shown in FIG. 10, the four-fold axis a of the plan view shape of the dummy pattern region 8 that is rotationally symmetric with a constant angle of 90 ° is the four-fold axis a of the measurement mark structure 7 with the constant angle of 90 °. Although they match, they may not match. When the two do not match, the distance L3 (see FIG. 4) between the inner periphery of the dummy pattern region 8 and the measurement mark structure 7 is not constant and has a maximum value and a minimum value. The minimum value of the distance L3 can be set so that the area to be referenced is within a range where the position detection device can accurately capture, for example, 2 μm or more.

  FIG. 11 is a plan view showing another example of the dummy uneven structure 9. In the example shown in FIG. 11, the dummy pattern region 8 has a pair of regions 8 a opposed to each other via the measurement mark structure 7 with the diagonal lines from the four corners of the measurement region 6 having a square outer shape as boundaries. Similarly, it is partitioned into a set of regions 8 b that face each other with the measurement mark structure 7 interposed therebetween. The boundary between the region 8a and the region 8b is indicated by a chain line. The dummy concavo-convex structure 9 is located in the region 8a and has a dummy concavo-convex structure 9a having a line / space-shaped recess or projection, and the dummy concavo-convex structure located in the region 8b and having a line / space-shaped recess or projection. Consists of structure 9b. The longitudinal direction of the line / space-shaped dummy uneven structure 9a located in one set of regions 8a is the same, and faces the direction of the measurement mark structure 7. In addition, the longitudinal direction of the line / space-shaped dummy uneven structure 9b located in the set of regions 8b is also the same, and faces the measurement mark structure 7. The longitudinal direction of the dummy concavo-convex structure 9a and the longitudinal direction of the dummy concavo-convex structure 9b are orthogonal to each other.

The line / space-shaped dummy concavo-convex structures 9a and 9b are arranged such that, for example, linear concave portions or convex portions having a predetermined width of about 0.05 to 1 μm are arranged with a constant pitch P in a direction orthogonal to the longitudinal direction. Shape. The shape in plan view of the dummy concavo-convex structure 9 including the dummy concavo-convex structure 9a and the dummy concavo-convex structure 9b is rotationally symmetric having a four-fold axis a having a constant angle of 90 °. In FIG. 11, a part of the dummy uneven structure 9a located in the region 8a is extracted and enlarged, and a part of the dummy uneven structure 9b located in the region 8b is extracted and enlarged.
In addition, in the example shown in FIG. 11, the four-fold axis a of the dummy pattern region 8 that is rotationally symmetric with a constant angle of 90 ° is the four-fold axis a of the measurement mark structure 7 with the constant angle of 90 °. However, the two may not match. When the two do not match, the distance L3 (see FIG. 4) between the inner periphery of the dummy pattern region 8 and the measurement mark structure 7 is not constant and has a maximum value and a minimum value. The minimum value of the distance L3 can be set so that the area to be referenced is within a range where the position detection device can accurately capture, for example, 2 μm or more.

  FIG. 12 is a plan view showing another example of the dummy uneven structure 9. In the example shown in FIG. 12, the dummy pattern region 8 has a pair of regions 8 a facing each other via the measurement mark structure 7 with the diagonal lines from the four corners of the measurement region 6 having a square outer shape as boundaries. Similarly, it is partitioned into a set of regions 8 b that face each other with the measurement mark structure 7 interposed therebetween. Further, each of the regions 8a and 8b is divided into an outer region 8a1 and 8b1 and an inner region 8a2 and 8b2 by a boundary parallel to the square outer shape of the measurement region 6. The boundary between the region 8a and the region 8b, the boundary between the outer region 8a1 and the inner region 8a2, and the boundary between the outer region 8b1 and the inner region 8b2 are indicated by chain lines. The dummy concavo-convex structure 9 is located in the outer region 8a1, and the dummy concavo-convex structure 9a1 having a line / space-shaped concave portion or convex portion, and the line / space-shaped concave portion or convex portion is located in the inner region 8a2. A dummy concavo-convex structure 9a2 and a dummy concavo-convex structure 9b1 located in the outer region 8b1 and having a line / space-shaped recess or projection, and a line / space-shaped recess or projection located in the inner region 8b2. And a dummy concavo-convex structure 9b2. The longitudinal directions of the line / space-shaped dummy concavo-convex structures 9a1 and 9a2 located in one set of regions 8a (regions 8a1 and 8a2) are the same, and face the direction of the measurement mark structure 7. Further, the longitudinal directions of the line / space-shaped dummy uneven structures 9b1 and 9b2 located in the pair of regions 8b (region 8b1 and region 8b2) are the same, and face the direction of the measurement mark structure 7. Therefore, the longitudinal direction of the dummy concavo-convex structure 9a1, 9a2 and the longitudinal direction of the dummy concavo-convex structure 9b1, 9b2 are in a state of being orthogonal.

The line / space-shaped dummy concavo-convex structure 9a1, 9a2, 9b1, 9b2 has, for example, a linear concave portion or convex portion with a predetermined width of about 0.05 to 1 μm and a period at a constant pitch in a direction perpendicular to the longitudinal direction. It is the shape arranged with the nature. Further, in the dummy uneven structure 9 of this example, the dummy uneven structures positioned in the outer region 8a1 and the region 8b1 are dense, and the dummy uneven structures positioned in the inner region 8a2 and the region 8b2 are sparse. That is, the pitch of the dummy concavo-convex structures 9a1, 9b1 located in the outer region 8a1 and the region 8b1 is P1, and the pitch of the dummy concavo-convex structures 9a2, 9b2 located in the inner region 8a2 and the region 8b2 is P2 (P1 <P2). It has become.
The plan view shape of the dummy concavo-convex structure 9 composed of such dummy concavo-convex structures 9a1, 9a2, 9b1, 9b2 is rotationally symmetric having a four-fold axis a with a constant angle of 90 °. In FIG. 12, a part of the dummy concavo-convex structures 9a1 and 9a2 located in the regions 8a1 and 8a2 are extracted and enlarged, and a part of the dummy concavo-convex structures 9b1 and 9b2 located in the regions 8b1 and 8b2 are shown. Extracted and enlarged.
In addition, in the example shown in FIG. 12, the four-fold axis a of the plan view shape of the dummy pattern region 8 that is rotationally symmetric with a constant angle of 90 ° is the four-fold axis a of the measurement mark structure 7 with a constant angle of 90 °. However, the two may not match. When the two do not match, the distance L3 (see FIG. 4) between the inner periphery of the dummy pattern region 8 and the measurement mark structure 7 is not constant and has a maximum value and a minimum value. The minimum value of the distance L3 can be set so that the area to be referenced is within a range where the position detection device can accurately capture, for example, 2 μm or more.
In the example shown in FIG. 12, the density of the dummy concavo-convex structure 9 is only inside and outside, but the change in density may be set more finely.

Such an imprint mold of the present invention can suppress deformation that occurs when the molded resin after curing and the mold are released from each other, and can form a measurement mark with high accuracy. Therefore, it is possible to accurately detect the size and direction of the pattern deviation in the formation of the pattern structure, which makes it easy to modify the design coordinates in the mold design, and to give the mold desired deformation during imprinting. Thus, it becomes easy to control the correction of the pattern accuracy performed.
The above-described embodiment of the mold for imprinting is an exemplification, and the present invention is not limited to the embodiment. For example, in the non-main pattern region 5, in addition to the measurement region 6, for example, the resin to be molded and the mold can be easily peeled off, and the pattern structure formed in the main pattern region 4 can be deformed. A region where an uneven structure or the like for suppression is disposed may be set.
In the mold for imprinting of the present invention, the degree of deformation that occurs in the measurement mark at the time of releasing the molded resin after curing and the mold is not only the dummy concavo-convex structure located in the dummy pattern region, but also has a large area. It is considered that the direction of the pattern of the line / space shape in the pattern area is also affected. Therefore, it is preferable to set the configuration of the dummy pattern region and the dummy concavo-convex structure in consideration of the overall pattern direction of the mold.

[Imprint method]
The imprint method of the present invention includes a resin supply process, a contact process, a curing process, and a mold release process. And it has the detection process of detecting the position of the measurement mark formed with the pattern structure as needed after the mold release process.
Such an imprinting method of the present invention will be described with reference to FIGS. 13A to 13D, taking as an example the case where the above-described imprinting mold 1 of the present invention is used. In FIGS. 13A to 13D, the uneven structure (concave portion in the drawing) provided in the uneven structure region A of the mold 1 is indicated by a chain line for convenience, and the uneven structure located in the main pattern region 4 in this uneven structure. No distinction is made between the measurement mark structures 7 located in the measurement region 6.

<Resin supply process>
In the resin supply step, droplets 31 of the molding resin are discharged and supplied from a inkjet head (not shown) to a desired region on the imprint transfer substrate 21 (FIG. 13A).
The transfer substrate 21 used in the imprinting method of the present invention can be appropriately selected. For example, glass such as quartz, soda lime glass, borosilicate glass, semiconductor such as silicon, gallium arsenide, gallium nitride, polycarbonate, polypropylene, It may be a resin substrate such as polyethylene, a metal substrate, or a composite material substrate made of any combination of these materials. Further, for example, a desired pattern structure such as a fine wiring used in a semiconductor or a display, a photonic crystal structure, an optical waveguide, or an optical structure such as holography may be formed.

  In the illustrated example, the transfer substrate 21 has a mesa structure having a convex structure portion 22, and a concave portion 23 is provided on the opposite surface of the mesa structure. Thus, by having the recessed part 23, the transfer substrate 21 becomes easy to curve, and mold release from the mold in the mold release process described later becomes easier. The plan view shape of the concave portion 23 overlaps with the plan view shape of the convex structure portion 22 and includes the plan view shape of the convex structure portion 22, and is the center of the plan view shape of the concave portion 23. It is preferable that the center of the convex structure portion 22 coincides with the center of the plan view shape. Moreover, the external shape of the planar view shape of the recessed part 23 may be circular, a polygon, etc., and there is no restriction | limiting in particular. Furthermore, the thickness d of the transfer substrate 21 where the concave portion 23 is located and the convex structure portion 22 is not present depends on the area of the concave portion 23 in a plan view, for example, the thickness at the end of the transfer substrate 21. It is preferably less than half of t. The shape of the transfer substrate 21 is not limited to the mesa structure, and may be a shape that does not have the recess 23.

The resin to be molded only needs to have fluidity that can be discharged from the inkjet head, and examples thereof include a photo-curable resin and a thermosetting resin. For example, the photo-curable resin is composed of a main agent, an initiator, and a crosslinking agent, and if necessary, improves the adhesion to a mold release agent for suppressing adhesion to the mold and the transfer substrate 21. It may contain the adhesive for making it do. And according to the use of the pattern structure manufactured by the imprint method, a required characteristic, a physical property, etc., the to-be-molded resin to be used can be selected suitably. For example, if the use of the pattern structure is a lithography application, it is required to have etching resistance, a low viscosity and a small residual film thickness, and if the use of the pattern structure is an optical member, a specific refractive index, Light transmittance is required, and a photocurable resin can be appropriately selected according to these requirements. However, in any application, it is required to have characteristics (viscosity, surface tension, etc.) satisfying the compatibility with the ink jet head to be used. Note that the viscosity, surface tension, and the like of a compatible liquid differ depending on the structure and material of the inkjet head. For this reason, it is preferable to appropriately adjust the viscosity, surface tension and the like of the molding resin to be used, or to appropriately select an ink jet head suitable for the molding resin to be used.
The number of molding resin droplets 31 to be supplied onto the transfer substrate 21 and the distance between adjacent droplets are the drop amount of each droplet, the total amount of photocurable resin required, and the photocuring of the substrate. It can be set as appropriate based on the wettability of the conductive resin, the gap between the mold 1 and the transfer substrate 21 in the subsequent contact step.

<Contact process>
Next, the mold 1 and the transfer substrate 21 are brought close to each other, and a resin droplet 31 is developed between the mold 1 and the transfer substrate 21 to form a photocurable resin layer 32 (FIG. 13B).
In the illustrated example, the concavo-convex structure region A of the mold 1 is positioned so as to face the convex structure portion 22 of the transfer substrate 21 having a mesa structure.

<Curing process>
Next, light irradiation is performed from the mold 1 side, and the photocurable resin layer 32 is cured to form a transfer resin layer 35 to which the uneven structure of the mold 1 is transferred (FIG. 13C). In this curing step, when the transfer substrate 21 is made of a light-transmitting material, light irradiation may be performed from the transfer substrate 21 side, or light irradiation may be performed from both sides of the transfer substrate 21 and the mold 1.
Further, when the molding resin is a thermosetting resin, the molding resin layer 32 can be cured by heat treatment.
<Release process>
Next, in a mold release step, the transfer resin layer 35 and the mold 1 are separated to bring the pattern structure 41, which is the transfer resin layer 35, onto the transfer substrate 21 (FIG. 13D).

<Detection process>
In the detection step, the position of the measurement mark formed together with the pattern structure is detected as necessary.
FIG. 14 is a view for explaining the position detection of the measurement mark 47 formed together with the pattern structure by imprinting as described above using the mold 1 of the present invention shown in FIG. FIG. 14 illustrates an example in which the convex portion 47a of the measurement mark 47 formed by the concave portion 7a or the convex portion 7a of the measurement mark structure 7 in FIG. 4 or the concave portion 47a is measured. In this example, when the position detection device scans the measurement mark 47 from the direction indicated by the arrow X (X direction), the planar view shape constituting the measurement mark 47 is a rectangular convex portion 47a or a concave portion 47a. The positions of the end x1, the end x2, the end x3, and the end x4 are detected. Further, when the position detecting device scans the measurement mark 47 from the direction indicated by the arrow Y (Y direction), the planar shape forming the measurement mark 47 is a rectangular convex portion 47a or an end portion of the concave portion 47a. The positions of y1, end y2, end y3, and end y4 are detected. From the end position of the measurement mark 47 detected in this way, it is possible to detect the presence / absence of a deviation from the design coordinates of the pattern in the X direction and the Y direction and the magnitude of the deviation at the position where the measurement mark 47 is located. it can. If there is a deviation in the pattern, it is possible to accurately detect the magnitude and direction of the pattern deviation at the position where the measurement mark 47 is located from the magnitude of the deviation in the X direction and the magnitude of the deviation in the Y direction. By measuring a plurality of measurement marks 47, the size and direction of deviation from the design coordinates of the pattern in the pattern structure formed using the mold, and the overall standard deviation and the degree of enlargement / reduction with respect to the design coordinates Can be accurately detected.

Such an imprinting method of the present invention can be used for manufacturing a semiconductor device, replica mold using a master mold, and the like. The master mold is provided with a plurality of measurement mark structures in advance, and the measurement mark formed on the replica mold manufactured using the master mold and the measurement formed on the pattern structure manufactured using the replica mold. By measuring the mark, it is possible to detect the size and direction of the deviation from the design coordinates. This facilitates modification of design coordinates and the like in mold design. In addition, it becomes easy to control correction of pattern accuracy performed by applying desired deformation to the mold during imprinting. Therefore, the imprint method of the present invention can stably produce a highly accurate pattern structure.
The above-described embodiment of the imprint method is an exemplification, and the present invention is not limited to this.

Next, the present invention will be described in more detail with reference to examples.
[Example 1]
<Mold production>
A quartz glass substrate (152 mm × 152 mm, thickness 6.35 mm) was prepared as a flat substrate, and an uneven structure region of 25 mm × 30 mm was set at the center of one surface of the substrate.
Next, a chromium thin film was formed on the one surface of the substrate by sputtering. Next, an electron beam sensitive positive resist was applied onto the chromium thin film by spin coating. The coating film was subjected to electron beam drawing based on the design coordinates and developed to form a desired resist pattern on the hard mask material layer in the concavo-convex structure region. In this design coordinate, a rectangular main pattern region (1530 μm × 1320 μm) is set in a grid pattern, and a non-main pattern region is set in a lattice shape in a gap portion of each main pattern region. In addition, 352 square measurement regions (100 μm × 100 μm) were set at each intersection of the non-main pattern region (see FIG. 2). Further, in each measurement region, four drawing regions having a rectangular shape (1 μm × 8 μm) in plan view are positioned on each side of the square having a side of 12 μm in the central square region (60 μm × 60 μm). In addition, the area excluding the central square area is set as a dummy pattern area, and the dot-shaped (1 μm × 1 μm) drawing area is set at a pitch of 1.5 μm.

Subsequently, the chromium thin film was etched through the resist pattern to form a hard mask.
Next, the substrate (quartz glass) was etched through the hard mask formed as described above to produce a master mold for imprinting.
In the concavo-convex structure region of the master mold thus fabricated, four convex portions having a rectangular shape (1 μm × 8 μm) in plan view are formed on one side in the square (60 μm × 60 μm) region at the center of each measurement region. Dummy concavities and convexities that are formed so as to be positioned on each side of a 12 μm square, and that form a measurement mark structure, and have convex portions with an outer diameter of 1 μm formed at a pitch of 1.5 μm in the surrounding dummy pattern region The structure was what was located. The measurement mark structure and the dummy concavo-convex structure were rotationally symmetric with the center of the measurement region being a four-fold axis at a constant angle of 90 ° (see FIG. 4). Also, the outer dimension L1 (length of the outer periphery of the dummy pattern region) of the measurement region shown in FIG. 4 is 100 μm, the length L2 of the inner periphery is 60 μm, the inner periphery of the dummy pattern region and the structure for measurement marks The distance L3 was 24 μm. In addition, the uneven structure of the master mold was observed with a scanning electron microscope, and the dimensions were measured.

<Pattern formation>
As a transfer substrate for a replica mold, a quartz glass substrate (152 mm × 152 mm, thickness 6.35 mm) having a mesa structure having a convex structure portion having a center of 25 mm × 30 mm and a height of 30 μm was prepared. The photocurable resin droplets were supplied to the convex structure portion of the transfer substrate using an ink jet apparatus.
The transfer substrate supplied with the molding resin as described above was brought close to the master mold, and droplets were developed between the master mold and the transfer substrate to form a photocurable resin layer.
Next, parallel light (ultraviolet light having a peak wavelength of 365 nm) was irradiated from the illumination optical system of the imprint apparatus to the master mold side under the condition of 1000 mJ / cm 2. Thus, light was irradiated from the master mold side to cure the photocurable resin layer, thereby obtaining a transfer resin layer to which the concavo-convex structure of the master mold was transferred.
Next, the transfer resin layer and the master mold were separated, and the pattern structure as the transfer resin layer was placed on the transfer substrate for the replica mold.

<Evaluation of pattern structure>
With respect to the measurement mark formed together with the measurement mark structure of the master mold and the pattern structure positioned on the transfer substrate for the replica mold, in each measurement region, the X and Y directions as shown in FIG. The edge position was detected. Further, for the measurement mark located on the transfer substrate for replica mold, the width of the measurement mark in each measurement region was measured. Then, the difference in displacement between the position of the measurement mark on the replica mold transfer substrate and the position of the measurement mark structure of the master mold was obtained in each of the X direction and the Y direction, and the standard deviation σ was calculated. . Further, the standard deviation σ of the width of the measurement mark in the X direction and the Y direction was calculated. As a result, as shown in Table 1 below, 3σ of the displacement amount of the measurement mark position in the X direction was 3.06 nm, and 3σ of the displacement amount of the measurement mark position in the Y direction was 4.17 nm. Further, 3σ of the width of the measurement mark in the X direction was 8.7 nm, and 3σ of the width of the measurement mark in the Y direction was 8.7 nm. From this result, it was confirmed that the deformation of the measurement mark was sufficiently suppressed. The end position of the measurement mark was detected using IPRO Series manufactured by KLA-Tencor.

[Example 2]
In the production of the master mold, in each measurement region, four drawing regions having a rectangular shape (1 μm × 8 μm) in plan view are arranged in a central square shape (40 μm × 40 μm), and each square side having a side of 12 μm. The area of the flat surface where no pattern exists was made smaller than that of the example. A line / space shape (line: 0.2 μm, space: 0) arranged such that the area excluding the central square area is a dummy pattern area and the pattern longitudinal direction is the Y direction (see FIG. 14). .2 μm) drawing area was set. That is, the dummy pattern region is rotationally symmetric with the plane view shape being a four-fold axis with a constant angle of 90 °, and the dummy concavo-convex structure is rotationally symmetric with the plane view shape being a two-fold axis with a constant angle of 180 °. And the two-fold axis coincided. A master mold was prepared in the same manner as in Example 1 except that the above changes were made.
Further, using this master mold, a pattern structure was formed on a transfer substrate for replica mold in the same manner as in Example 1.

For the measurement mark formed together with this pattern structure, the difference in displacement between the position of the measurement mark on the replica mold transfer substrate and the position of the measurement mark structure of the master mold is the same as in Example 1. Was obtained for each of the X direction and the Y direction, and the standard deviation σ was calculated. Further, the standard deviation σ of the width of the measurement mark in the X direction and the Y direction was calculated. As a result, as shown in Table 1 below, the displacement 3σ of the measurement mark position in the X direction was 2.07 nm, and the displacement 3σ of the measurement mark position in the Y direction was 3.49 nm. Further, 3σ of the width of the measurement mark in the X direction was 3.4 nm, and 3σ of the width of the measurement mark in the Y direction was 5.4 nm. From this result, in this second embodiment, compared to the first embodiment, the square area at the center of each measurement area is reduced, so that the dummy pattern area becomes larger, and the measurement mark structure and the dummy uneven structure It was confirmed that the deformation of the measurement mark was further suppressed because of the close distance. On the other hand, since the dummy concavo-convex structure has a line / space shape in which the longitudinal direction of the pattern is the Y direction, it is confirmed that there is a large anisotropy in the X direction and the Y direction compared to the first embodiment in terms of displacement and deformation. In this respect, it was slightly inferior to Example 1.

[Comparative example]
In the fabrication of the mold, a square measurement region (158 μm × 153 μm) is set at each intersection of the non-main pattern region, and a rectangular (100 μm × 115 μm) region is set at the center of each measurement region. A region excluding the rectangular region was defined as a dummy pattern region. Further, the center of the rectangular area does not coincide with the center of the measurement mark structure, and the maximum value of the distance L3 between the inner periphery of the dummy pattern area and the measurement mark structure shown in FIG. Was 78 μm, and the minimum value was 25 μm. That is, as shown in FIG. 15, the dummy pattern region 8 is not rotationally symmetric having a four-fold axis whose planar view shape has a constant angle of 90 °, and the measurement mark structure 7 has a constant planar view shape. Although it is rotationally symmetric having a four-fold axis a with an angle of 90 °, the four-turn axis a is not aligned with the center c of the measurement region. A mold was produced in the same manner as in Example 1 except that the above changes were made.
Further, using this mold, a pattern structure was formed on the transfer substrate in the same manner as in the example.

  For the measurement mark formed together with this pattern structure, the difference in displacement between the position of the measurement mark on the replica mold transfer substrate and the position of the measurement mark structure of the master mold is the same as in Example 1. Was obtained for each of the X direction and the Y direction, and the standard deviation σ was calculated. Further, the standard deviation σ of the width of the measurement mark in the X direction and the Y direction was calculated. As a result, as shown in Table 1 below, 3σ of the displacement amount of the measurement mark position in the X direction was 6.49 nm, and 3σ of the displacement amount of the measurement mark position in the Y direction was 6.64 nm. Further, 3σ of the width of the measurement mark in the X direction was 11.8 nm, and 3σ of the width of the measurement mark in the Y direction was 9.8 nm. From this result, it was confirmed that the deformation of the measurement mark was larger than that in the first and second embodiments, and the displacement was also larger than that in the first and second embodiments.

  From the results of Example 1, Example 2, and Comparative Example, the displacement 3σ of the measurement mark position is a distance (L3 shown in FIG. 4) between the inner periphery of the dummy pattern region and the measurement mark structure. It was confirmed that it became smaller according to

  The present invention can be applied to the manufacture of various pattern structures using an imprint method and the fine processing of workpieces such as substrates.

DESCRIPTION OF SYMBOLS 1 ... Mold for imprint 2 ... Base material 4 ... Main pattern area 5 ... Non main pattern area 6 ... Measurement area 7 ... Structure for measurement mark 8, 8a, 8b, 8a1, 8a2, 8b1, 8b2 ... Dummy pattern area 9 , 9a, 9b, 9a1, 9a2, 9b1, 9b2 ... dummy uneven structure A ... uneven structure area 21 ... transfer substrate 31 ... droplet 32 ... molded resin layer 35 ... transfer resin layer 47 ... measurement mark

Claims (5)

A substrate;
An uneven structure region that is set on one surface of the substrate and includes an uneven structure;
A measurement region set in the concavo-convex structure region,
The measurement region includes a measurement mark structure, a dummy pattern region set to surround the measurement mark structure with a predetermined distance, and a dummy concavo-convex structure located in the dummy pattern region. And
The measurement mark structure is used to form a measurement mark that is used to detect the size and direction of a deviation from the pattern design coordinates in a pattern structure formed corresponding to the concavo-convex structure. A structure,
The inner periphery and outer periphery of the dummy pattern region, and the planar view shape of the measurement mark structure are four-fold symmetrical shapes,
The four-fold axis in the plan view shape of the inner periphery, the four-turn axis in the plan view shape of the outer periphery, and the four-turn axis in the plan view shape of the measurement mark structure are all the same. Imprint mold. 2. The imprint mold according to claim 1, wherein the dummy concavo-convex structure has a plurality of dot-shaped concave portions or convex portions, or line / space-shaped concave portions or convex portions. The imprint mold according to claim 2 , wherein the dot-shaped concave portions or the convex portions, or the line / space-shaped concave portions or the convex portions are arranged so as to form a dense gradation. . 2. The imprint mold according to claim 1, wherein the dummy concavo-convex structure has a plurality of dot-shaped concave portions or convex portions and line / space-shaped concave portions or convex portions. A resin supply step of supplying a molding resin to at least one of the imprint mold and the transfer substrate according to any one of claims 1 to 4 ,
Contacting the imprint mold and the transfer substrate close to each other, and developing the resin to be molded between the imprint mold and the transfer substrate to form a resin layer to be molded;
A curing step of curing the molding resin layer and transferring the concavo-convex structure to the transfer resin layer;
A mold release step in which the transfer resin layer and the imprint mold are separated to place the pattern structure as the transfer resin layer on the transfer substrate;
An imprint method comprising: a detection step of detecting a position of a measurement mark formed together with the pattern structure as needed after the releasing step.

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