JP6597709B2 - Electro-optical device and electronic apparatus - Google Patents

Description

  The present invention relates to an electro-optical device provided with a temperature sensor, and an electronic apparatus.

  An electro-optical device such as a liquid crystal device includes a first substrate having a pixel transistor and a pixel electrode in a display area, a second substrate having a common electrode facing the pixel electrode, and a first substrate and a second substrate. And an electro-optical layer provided between the pixel electrode and the common electrode. On the second substrate, a parting light-shielding layer is formed in a frame-like region extending along the outer edge of the display region. In the electro-optical device configured as described above, the light source light irradiated from the second substrate side is modulated to display an image.

  In the electro-optical device, the temperature of the electro-optical layer increases due to the irradiation of the light source light, and the display performance and life may be reduced. For this reason, a technique has been proposed in which a resistance wire or the like is provided on the first substrate as a temperature sensor to monitor the temperature of the electro-optic layer or the like (see Patent Documents 1 and 2). Patent Document 1 proposes a structure in which a temperature-sensitive wiring (temperature sensor) is arranged in a region overlapping with a sealing material for bonding a first substrate and a second substrate. Patent Document 2 proposes a structure in which resistance wires (temperature sensors) are arranged along the outer edge of the display area.

JP 2012-155007 A JP 2009-103780 A

  In the electro-optical device, when the temperature sensor is provided on the first substrate, a plurality of insulating layers are interposed between the electro-optical layer and the temperature sensor, and the insulating layer has low thermal conductivity. For this reason, it is difficult to properly monitor the temperature of the electro-optic layer only by arranging the temperature sensor on the first substrate as in the configurations described in Patent Documents 1 and 2.

  In view of the above problems, an object of the present invention is to provide an electro-optical device and an electronic apparatus that can appropriately monitor the temperature of an electro-optical layer in a display region.

  In order to solve the above problem, an aspect of the electro-optical device according to the present invention includes a first substrate having a pixel electrode in a display region, a second substrate facing the first substrate, the first substrate, and the first substrate. A sealing material for bonding the second substrate; an electro-optical layer provided between the first substrate and the second substrate inside the sealing material; and a frame extending along an outer edge of the display region A light-shielding layer provided in the frame region, and the first substrate includes a plurality of layers stacked between the temperature sensor provided in the frame-like region and the temperature sensor and the electro-optic layer. Between the insulating layer and any two insulating layers of the plurality of insulating layers, the temperature sensor is provided so as to overlap in a plan view, and has a light-shielding property having higher thermal conductivity than the plurality of insulating layers. And a heat transfer layer.

  In the present invention, a temperature sensor is provided on the first substrate in the frame-like region extending between the outer edge of the display region and the sealing material. For this reason, since the temperature sensor is close to the electro-optic layer, the temperature of the electro-optic layer can be properly monitored by the temperature sensor. The first substrate has a plurality of insulating layers between the electro-optic layer and the temperature sensor, but the thermal conductivity is higher between any two insulating layers than the plurality of insulating layers. A heat transfer layer is provided. For this reason, the heat of the electro-optic layer is easily transmitted to the temperature sensor through the heat transfer layer. Therefore, the temperature of the electro-optic layer in the display area can be properly monitored by the temperature sensor.

  In the present invention, of the two insulating layers, a hole is formed in the first insulating layer located on the temperature sensor side, and the heat transfer layer is formed between the two insulating layers and inside the hole. The aspect which exists can be employ | adopted. According to this aspect, since the heat transfer layer is located near the temperature sensor, the heat of the electro-optic layer is easily transferred to the temperature sensor via the heat transfer layer.

  In the present invention, it is possible to adopt a mode in which the hole reaches one electrode of the temperature sensor, and the heat transfer layer is in contact with the one electrode at the bottom of the hole. According to this aspect, since the heat transfer layer is located near the temperature sensor, the heat of the electro-optic layer is easily transferred to the temperature sensor via the heat transfer layer. Even in this case, since the heat transfer layer is in contact with only one electrode of the temperature sensor, the operation of the temperature sensor is not hindered.

  In the present invention, the plurality of insulating layers may adopt a mode in which a total thickness of a portion overlapping the temperature sensor in plan view is thinner than a total thickness of a portion not overlapping the temperature sensor in plan view. According to this aspect, the heat of the electro-optic layer is easily transmitted to the temperature sensor through the insulating layer.

  In the present invention, the plurality of insulating layers have a total thickness of a portion overlapping the temperature sensor on the electro-optic layer side in plan view with respect to the heat transfer layer, and the electro-optic layer with respect to the heat transfer layer. It is possible to adopt a mode that is thinner than the total thickness of the portion that does not overlap the temperature sensor in plan view. According to such an aspect, the total thickness of the portions of the plurality of insulating layers that overlap with the temperature sensor in a plan view without partially adjusting the thickness of the insulating layer on the temperature sensor side with respect to the heat transfer layer. Can be made thinner than the total thickness of the part that does not overlap the temperature sensor in plan view.

  In the present invention, of the two insulating layers, the second insulating layer that overlaps the heat transfer layer on the electro-optic layer side is formed with a recess that overlaps the temperature sensor in plan view. Can do. In this case, the recess penetrates the second insulating layer, and the plurality of insulating layers include a third insulating layer that covers the heat transfer layer exposed at the bottom of the recess. Can be adopted. According to this aspect, the total thickness of the plurality of insulating layers that overlap the temperature sensor on the electro-optic layer side with respect to the heat transfer layer in a plan view can be reduced. Further, since the heat transfer layer is not exposed at the bottom of the recess, the electrical influence from the heat transfer layer to the electro-optic layer can be suppressed.

  In another aspect of the electro-optical device according to the invention, a first substrate having a pixel electrode in a display region, a second substrate facing the first substrate, and the first substrate and the second substrate are bonded together. A sealing material, an electro-optical layer provided between the first substrate and the second substrate inside the sealing material, and a light shielding provided in a frame-like region extending along an outer edge of the display region And the first substrate includes a temperature sensor provided in the frame-shaped region, and a plurality of insulating layers stacked between the temperature sensor and the electro-optic layer. The plurality of insulating layers are characterized in that a total thickness of a portion overlapping the temperature sensor in plan view is thinner than a total thickness of a portion not overlapping the temperature sensor in plan view.

  In the present invention, the temperature sensor is provided on the first substrate in the frame-like region extending between the outer edge of the display region and the sealing material. For this reason, since the temperature sensor is close to the electro-optic layer, the temperature of the electro-optic layer can be properly monitored by the temperature sensor. In addition, a plurality of insulating layers are interposed between the electro-optic layer and the temperature sensor on the first substrate, but the total thickness of the plurality of insulating layers overlapping the temperature sensor in plan view is thin. For this reason, the heat of the electro-optic layer is easily transmitted to the temperature sensor through the insulating layer. Therefore, the temperature of the electro-optic layer in the display area can be properly monitored by the temperature sensor.

  In the present invention, an area that overlaps at least a part of the temperature sensor in a plan view includes an opening formed in the light shielding layer, a notch formed in the light shielding layer, a discontinuous portion of the light shielding layer, or the light shielding. A mode in which a portion in which the layer is partially thinned is provided can be employed. According to this aspect, for example, even when the light shielding layer is provided on the opposite side (second substrate) to the electro-optic layer, the electro-optic layer in the portion overlapping the temperature sensor in plan view Since the light source light is irradiated through the opening, the cutout, etc., it is heated in the same manner as the electro-optic layer in the display area. Therefore, the monitoring result of the temperature sensor has a small error from the temperature of the electro-optic layer in the display area. In addition, when the light shielding layer is formed on the first substrate, even if the heat conductivity of the light shielding layer is low, the heat of the electro-optic layer is appropriately transmitted to the temperature sensor through the opening or the notch. Therefore, the temperature of the electro-optic layer can be properly monitored by the temperature sensor. Therefore, the light shielding layer hardly influences the monitoring result of the temperature of the electro-optic layer by the temperature sensor.

  In the present invention, the light shielding layer may employ an aspect provided on the second substrate. In the case of such an aspect, the portion of the electro-optic layer that overlaps the temperature sensor in plan view is also irradiated with the light source light through the opening, the cutout, and the like, and thus is heated in the same manner as the electro-optic layer in the display region. Therefore, the monitoring result of the temperature sensor has a small error from the temperature of the electro-optic layer in the display area. Therefore, the light shielding layer hardly influences the monitoring result of the temperature of the electro-optic layer by the temperature sensor.

  In the present invention, the light shielding layer may be formed of a black resin. For example, the light shielding layer may be formed on the first substrate. In such an embodiment, since the light shielding layer is made of a black resin, even when the thermal conductivity is low, the heat of the electro-optic layer is appropriately transmitted to the temperature sensor through the opening and the notch. Therefore, the temperature of the electro-optic layer can be properly monitored by the temperature sensor.

  In the present invention, the first substrate includes a pixel transistor electrically connected to the pixel electrode, and the temperature sensor includes a sensor semiconductor layer provided in the same layer as the semiconductor layer of the pixel transistor. The aspect which is can be employ | adopted. In the present invention, the temperature sensor may be a diode sensor.

  A liquid crystal device to which the present invention is applied can be used in various electronic devices such as a direct-view display device and a projection display device. When the electronic apparatus is a projection display device, the projection display device includes a light source unit that emits light supplied to the liquid crystal device and a projection optical system that projects light modulated by the liquid crystal device. is doing.

1 is a plan view illustrating a configuration example of an electro-optical device according to Embodiment 1 of the present invention. It is HH 'sectional drawing of the electro-optical apparatus shown in FIG. FIG. 2 is a block diagram illustrating an electrical configuration of the electro-optical device illustrated in FIG. 1. FIG. 2 is a cross-sectional view schematically illustrating a configuration example of a pixel of the liquid crystal device illustrated in FIG. 1. FIG. 2 is an explanatory diagram schematically showing a cross-sectional configuration around a temperature sensor formed in the electro-optical device shown in FIG. 1. FIG. 6 is a circuit diagram of the temperature sensor shown in FIG. 5. It is explanatory drawing which shows typically the planar structure of the temperature sensor shown in FIG. FIG. 6 is an explanatory diagram schematically showing a cross-sectional configuration around a temperature sensor formed in an electro-optical device according to Embodiment 2 of the present invention. It is a circuit diagram of the temperature sensor shown in FIG. It is explanatory drawing which shows typically the planar structure of the temperature sensor shown in FIG. It is explanatory drawing which shows typically another plane structure of the temperature sensor shown in FIG. It is explanatory drawing which shows typically the cross-sectional structure of the periphery of the temperature sensor formed in the electro-optical apparatus which concerns on Embodiment 3 of this invention. FIG. 13 is a process cross-sectional view illustrating an insulating film forming process in the manufacturing process of the electro-optical device illustrated in FIG. 12. FIG. 10 is an explanatory diagram schematically showing a cross-sectional configuration around a temperature sensor formed in an electro-optical device according to Embodiment 4 of the present invention. It is explanatory drawing of the projection type display apparatus (electronic device) using the liquid crystal device to which this invention is applied.

  Embodiments of the present invention will be described with reference to the drawings. In the drawings to be referred to in the following description, the scales are different for each layer and each member so that each layer and each member have a size that can be recognized on the drawing. In describing the layers formed on the first substrate, the upper layer side or the surface side means the side opposite to the side where the substrate body of the first substrate is located (the side where the counter substrate and the liquid crystal layer are located). The lower layer side means the side where the substrate body of the first substrate is located. In describing the layer formed on the second substrate, the upper layer side or the surface side means the side opposite to the side where the substrate body of the counter substrate is located (the side where the first substrate and the liquid crystal layer are located), and the lower layer side. The side means the side where the substrate body of the second substrate is located. Further, in the present invention, “plan view” means a state viewed from the normal direction to the first substrate 10 or the second substrate 20.

[Embodiment 1]
(Specific configuration of electro-optical device 100)
FIG. 1 is a plan view illustrating a configuration example of an electro-optical device 100 according to Embodiment 1 of the present invention. 2 is a cross-sectional view of the electro-optical device 100 shown in FIG.

  The electro-optical device 100 shown in FIGS. 1 and 2 is a liquid crystal device and includes a liquid crystal panel 100p. In the electro-optical device 100, the first substrate 10 and the second substrate 20 are bonded to each other with a sealing material 107 through a predetermined gap, and the sealing material 107 is provided in a frame shape along the outer edge of the second substrate 20. It has been. The sealing material 107 is an adhesive made of a photo-curing resin, a thermosetting resin, or the like, and is mixed with a gap material 107a such as glass fiber or glass beads for setting the distance between both substrates to a predetermined value. In the liquid crystal panel 100p, an electro-optical layer 50 is provided in a region surrounded by the sealant 107 between the first substrate 10 and the second substrate 20. The sealing material 107 is formed with an interrupted portion 107c used as a liquid crystal injection port, and the interrupted portion 107c is closed by the sealing material 108 after the liquid crystal material is injected. Note that when the liquid crystal material is sealed by a dropping method, the discontinuous portion 107c is not formed.

  The first substrate 10 and the second substrate 20 are both square, and a display area 10 a is provided as a square area in the approximate center of the electro-optical device 100. Corresponding to such a shape, the sealing material 107 is also provided in a substantially square shape, and the outer side of the display area 10a is a rectangular frame-shaped outer peripheral area 10c.

  In the first substrate 10, the data line driving circuit 101 and the plurality of terminals 102 are formed along one side of the first substrate 10 on the side of the outer peripheral region 10 c where the first substrate 10 projects from the second substrate 20. The scanning line driving circuit 104 is formed along the other side adjacent to the one side. The terminal 102 is provided on the outer peripheral side from the sealing material 107. A flexible wiring substrate (not shown) is connected to the terminal 102, and various potentials and various signals are input to the first substrate 10 through the flexible wiring substrate. In the present embodiment, the data line driving circuit 101 and the scanning line driving circuit 104 partially overlap with the sealing material 107 in plan view.

  The first substrate 10 includes a translucent substrate body 10w such as a quartz substrate or a glass substrate, and the second substrate 20 out of the one surface 10s and the other surface 10t of the first substrate 10 (substrate body 10w). On the side of the one surface 10s opposite to the display region 10a, a plurality of pixel transistors and pixel electrodes 9a electrically connected to each of the plurality of pixel transistors are formed in a matrix. A first alignment film 16 is formed on the upper layer side of the pixel electrode 9a. On the side of one surface 10 s of the first substrate 10, in the outer peripheral area 10 c, a rectangular frame-like area 10 b extending between the outer edge of the display area 10 a and the sealing material 107 has a side of the display area 10 a. A dummy pixel electrode 9b formed simultaneously with the pixel electrode 9a is formed in a portion extending along the line.

  The second substrate 20 has a translucent substrate body 20w such as a quartz substrate or a glass substrate, and the first substrate 10 out of the one surface 20s and the other surface 20t of the second substrate 20 (substrate body 20w). A common electrode 21 is formed on the side of the one surface 20s facing the surface. The common electrode 21 is formed as a region including the plurality of pixels 100a as substantially the entire surface of the second substrate 20 or a plurality of strip-like electrodes. In the present embodiment, the common electrode 21 is formed on substantially the entire surface of the second substrate 20.

  A light shielding layer 29 is formed on the lower layer side of the common electrode 21 in the frame-like region 10b on the one surface 20s side of the second substrate 20, and a second alignment film is formed on the surface of the common electrode 21 on the electro-optic layer 50 side. 26 are stacked. A light-transmitting planarization film 22 is formed between the light shielding layer 29 and the common electrode 21. The light shielding layer 29 is formed as a parting light shielding layer 29a extending along the frame-shaped region 10b, and the display area 10a is defined by the inner edge of the parting light shielding layer 29a. The light shielding layer 29 is also formed as a black matrix portion 29b that overlaps the inter-pixel region 10f sandwiched between adjacent pixel electrodes 9a. The parting light-shielding layer 29 a is formed at a position overlapping the dummy pixel electrode 9 b in a plan view, and the outer peripheral edge of the parting light-shielding layer 29 a is in a position with a gap between the inner peripheral edge of the sealing material 107. Therefore, the parting light shielding layer 29a and the sealing material 107 do not overlap. The parting light shielding layer 29a (light shielding layer 29) is made of a light shielding metal film or a black resin.

The first alignment film 16 and the second alignment film 26 are inorganic alignment films made of oblique vapor deposition films such as SiO _X (x ≦ 2), TiO ₂ , MgO, Al ₂ O ₃ , and columnar bodies called columns. Consists of a columnar structure layer formed obliquely with respect to the first substrate 10 and the second substrate 20. Accordingly, the first alignment film 16 and the second alignment film 26 obliquely align nematic liquid crystal molecules having negative dielectric anisotropy used for the electro-optic layer 50 with respect to the first substrate 10 and the second substrate 20. The liquid crystal molecules are pretilted. In this manner, the electro-optical device 100 is configured as a normally black VA (Vertical Alignment) mode liquid crystal device.

  In the electro-optical device 100, the inter-substrate conduction electrode portions 24 t are formed on the four corners on the one surface 20 s side of the second substrate 20 outside the sealing material 107, and one surface of the first substrate 10 is formed. On the 10s side, inter-substrate conduction electrode portions 6t are formed at positions facing the four corners of the second substrate 20 (inter-substrate conduction electrode portions 24t). The inter-substrate conducting electrode portion 6t is conducted to the common potential line 6s, and the common potential line 6s is conducted to the common potential applying terminal 102a among the terminals 102. An inter-substrate conducting material 109 containing conductive particles is disposed between the inter-substrate conducting electrode portion 6t and the inter-substrate conducting electrode portion 24t, and the common electrode 21 of the second substrate 20 is inter-substrate conducting. It is electrically connected to the first substrate 10 side via the common electrode portion 6t, the inter-substrate conducting material 109, and the inter-substrate conducting electrode portion 24t. For this reason, a common potential is applied to the common electrode 21 from the first substrate 10 side.

  The electro-optical device 100 of this embodiment is a transmissive liquid crystal device. Accordingly, the pixel electrode 9a and the common electrode 21 are formed of a light-transmitting conductive film such as an ITO (Indium Tin Oxide) film or an IZO (Indium Zinc Oxide) film. In the electro-optical device 100 (transmission type liquid crystal device), the light source light L incident from the second substrate 20 side is modulated while being emitted from the first substrate 10 to display an image.

  The electro-optical device 100 can be used as a color display device of an electronic device such as a mobile computer or a mobile phone. In this case, a color filter (not shown) is formed on the second substrate 20 or the first substrate 10. The The electro-optical device 100 can be used as an RGB light valve in a projection type display device (liquid crystal projector) described later. In this case, each of the RGB electro-optical devices 100 receives, for example, light of each color separated through a dichroic mirror for RGB color separation as incident light. Not formed.

(Configuration of translucent portion 29e)
In the present embodiment, the frame-shaped region 10b is formed with a light-transmitting portion 29e having higher light transmittance than the parting light-shielding layer 29a. In the present embodiment, the translucent part 29e is formed at one location adjacent to the corner of the display area 10a. The translucent portion 29e includes an opening 29f formed in the light shielding layer 29 (parting light shielding layer 29a).

  When the electro-optical device 100 is mounted on a projection display device or the like, the electro-optical device 100 includes a holder (not shown) including a frame-shaped plate portion 110 that covers the outer peripheral region 10 c of the liquid crystal panel 100 p from the second substrate 20 side. )). The inner edge 111 of the plate part 110 is located slightly outside the position overlapping the inner edge of the parting light-shielding layer 29a. Accordingly, a part of the light source light L is incident on the light transmitting portion 29e. Further, when the plate part 110 is disposed so as to completely cover the parting light-shielding layer 29a, a light-transmitting window is formed in the plate part 110 at a position overlapping the light-transmitting part 29e in plan view.

(Electrical configuration of electro-optical device 100)
FIG. 3 is a block diagram showing an electrical configuration of the electro-optical device 100 shown in FIG. In FIG. 3, the electro-optical device 100 includes a VA mode liquid crystal panel 100p. The liquid crystal panel 100p includes a display region 10a in which a plurality of pixels 100a are arranged in a matrix in the central region. In the liquid crystal panel 100p, in the first substrate 10 described with reference to FIGS. 1 and 2, etc., a plurality of scanning lines 3a connected to the scanning line driving circuit 104 and data lines are provided inside the display region 10a. A plurality of data lines 6a connected to the drive circuit 101 extend in the first direction X and the second direction Y, respectively, and a pixel 100a is configured at a position corresponding to the intersection thereof. In each of the plurality of pixels 100a, a pixel transistor 30 made of a field effect transistor or the like, and a pixel electrode 9a electrically connected to the pixel transistor 30 are formed. The data line 6 a is electrically connected to the source of the pixel transistor 30, the scanning line 3 a is electrically connected to the gate of the pixel transistor 30, and the pixel electrode 9 a is electrically connected to the drain of the pixel transistor 30. Has been. An image signal is supplied to the data line 6a, and a scanning signal is supplied to the scanning line 3a.

  In each pixel 100a, the pixel electrode 9a is opposed to the common electrode 21 of the second substrate 20 described with reference to FIGS. 1 and 2 via the electro-optic layer 50, and constitutes a liquid crystal capacitor 50a. In each pixel 100a, a holding capacitor 55 is added in parallel with the liquid crystal capacitor in order to prevent fluctuation of the image signal held in the liquid crystal capacitor. In the present embodiment, in order to form the storage capacitor 55, the first substrate 10 is provided with a capacitor line 5b extending across the plurality of pixels 100a, and a common potential is supplied to the capacitor line 5b. ing. In the present embodiment, the capacitor line 5b extends in the first direction X along the scanning line 3a.

(Specific Configuration of Pixel 100a)
FIG. 4 is a cross-sectional view schematically showing a configuration example of the pixel 100a of the electro-optical device 100 shown in FIG. As shown in FIG. 4, on the one surface 10s side of the first substrate 10, a lower scanning line 3a made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film is formed. ing. The scanning line 3a is made of a light shielding film such as tungsten silicide (WSi). A translucent insulating film 11 is formed on the upper layer side of the scanning line 3a, and a pixel transistor 30 including a semiconductor layer 30a is formed on the surface side of the insulating film 11. The insulating film 11 is made of a silicon oxide film or the like.

  The pixel transistor 30 includes a semiconductor layer 30a and a gate electrode 30g that intersects the semiconductor layer 30a, and includes a light-transmitting gate insulating layer 30b between the semiconductor layer 30a and the gate electrode 30g. The semiconductor layer 30a is composed of a polysilicon film (polycrystalline silicon film) or the like. The pixel transistor 30 has an LDD structure. The gate insulating layer 30b has a two-layer structure of a gate insulating layer made of a silicon oxide film obtained by thermally oxidizing the semiconductor layer 30a and a second gate insulating layer made of a silicon oxide film formed by a low pressure CVD method or the like. The gate electrode 30g is electrically connected through a contact hole (not shown) penetrating the gate insulating layer 30b and the insulating film 11.

  Translucent interlayer insulating films 12, 13, and 14 (multiple insulating layers) made of a silicon oxide film or the like are sequentially formed on the upper layer side of the gate electrode 30g, and the interlayer insulating films 12, 13, and 14 The holding capacitor 55 described with reference to FIG. A data line 6 a and a drain electrode 6 b are formed between the interlayer insulating film 12 and the interlayer insulating film 13, and a relay electrode 7 a is formed between the interlayer insulating film 13 and the interlayer insulating film 14. The data line 6a is electrically connected to the source region of the semiconductor layer 30a through a contact hole 12a penetrating the interlayer insulating film 12 and the gate insulating layer 30b. The drain electrode 6b is electrically connected to the drain region of the semiconductor layer 30a through a contact hole 12b that penetrates the interlayer insulating film 12 and the gate insulating layer 30b. The relay electrode 7 a is electrically connected to the drain electrode 6 b through a contact hole 13 a that penetrates the interlayer insulating film 13. The interlayer insulating film 14 has a flat surface, and a pixel electrode 9a is formed on the surface side of the interlayer insulating film 14 (the surface side on the electro-optic layer 50 side). The pixel electrode 9 a is electrically connected to the relay electrode 7 a through a contact hole 14 a that penetrates the interlayer insulating film 14. Accordingly, the pixel electrode 9a is electrically connected to the drain region of the pixel transistor 30 via the relay electrode 7a and the drain electrode 6b. The relay electrode 7a and the data line 6a are made of a conductive film such as a metal silicide film, a metal film, or a metal compound film.

(Configuration of temperature sensor 8)
FIG. 5 is an explanatory diagram schematically showing a cross-sectional configuration around the temperature sensor 8 formed in the electro-optical device 100 shown in FIG. FIG. 6 is a circuit diagram of the temperature sensor 8 shown in FIG. FIG. 7 is an explanatory diagram schematically showing a planar configuration of the temperature sensor 8 shown in FIG. In FIG. 5, illustration of the insulating film 11, the gate insulating layer 30b, and the like is omitted. Further, in FIG. 7, the sensor semiconductor layer 30 s is indicated by a thick solid line, the boundary of each region of the sensor semiconductor layer 30 s is indicated by a thin two-dot chain line, and the electrodes 6 e to 6 i of the diode sensor 8 a are indicated by a long broken line, The heat transfer layer 7s is indicated by a thick alternate long and short dash line, and the contact hole 12s is indicated by a thin solid square.

  As shown in FIG. 5, in the first substrate 10 of the electro-optical device 100, a position overlapping the opening 29f (translucent portion 29e) of the parting light-shielding layer 29a formed on the second substrate 20 in a plan view is shown. The temperature sensor 8 is provided in the same layer as the semiconductor layer 30a of the pixel transistor 30 shown in FIG. In the present embodiment, the temperature sensor 8 is a diode sensor 8a using a sensor semiconductor layer 30s that is the same layer as the semiconductor layer 30a. In the present embodiment, the temperature sensor 8 has a plurality of diode elements 8b as shown in FIG. In the diode sensor 8a, as many diode elements 8b as necessary to obtain a desired sensitivity are electrically connected in series or in parallel. In this embodiment, the case where the four diode elements 8b are electrically connected in series is illustrated.

  In the diode element 8b, the forward voltage when a constant current is passed changes with temperature. Therefore, the diode sensor 8a can be used as the temperature sensor 8 by measuring the forward voltage when a constant current is passed. In the present embodiment, the temperature of the electro-optical layer 50 is monitored by the temperature sensor 8 and used for monitoring the life of the electro-optical device 100. Further, the driving condition in the electro-optical device 100 may be corrected based on the monitoring result of the temperature of the electro-optical layer 50.

  As shown in FIGS. 5 and 7, in each of the plurality of diode elements 8b, an intrinsic semiconductor layer (I layer) is interposed between the high concentration P + region and the high concentration N + region in the sensor semiconductor layer 30s. . The pixel transistor 30 described with reference to FIG. 4 is an N-channel thin film transistor, and the scanning line driver circuit 104 described with reference to FIG. 3 includes an N-channel thin film transistor and a P-channel thin film transistor. Provided with a CMOS circuit. Therefore, the diode element 8b can be formed at the same time when the N-channel thin film transistor and the P-channel thin film transistor are formed.

  The structure on the upper layer side (electro-optical layer 50 side) of the diode sensor 8a is substantially the same as the structure described with reference to FIG. 4, and a plurality of interlayer insulations are provided between the diode sensor 8a and the electro-optical layer 50. Films 12, 13, and 14 (multiple insulating layers) are laminated. Accordingly, a plurality of electrodes 6e to 6i connected to the diode element 8b are formed using any one of the interlayer insulating films 12 and 13. In the present embodiment, the electrodes 6e to 6i are in the same layer as the data line 6a and the drain electrode 6b shown in FIG. 4 and are formed between the interlayer insulating films 12 and 13. Accordingly, the electrodes 6e to 6i are connected to the N + layer and the P + layer of the diode element 8b through the plurality of contact holes 12s formed in the interlayer insulating film 12. More specifically, the electrode 6e is connected to the N + layer of the diode element 8b at one end of the four diode elements 8b as a negative electrode wiring, and extends to the terminal 102 shown in FIG. The electrode 6i is connected to the P + layer of the diode element 8b at the other end of the four diode elements 8b as a positive electrode wiring, and extends to the terminal 102 shown in FIG. The electrodes 6f, 6g, and 6h are relay electrodes, and are connected to the N + layer of one diode element 8b of two adjacent diode elements 8b and the P + region of the other diode element 8b.

  Between any two insulating layers of the plurality of interlayer insulating films 12, 13, and 14, a light-shielding heat transfer layer 7s that overlaps at least a part of the temperature sensor 8 in plan view is provided. The heat transfer layer 7s is composed of the same metal layer as the relay electrode 7a shown in FIG. 4, and is provided between the interlayer insulating films 13 and 14. The heat transfer layer 7 s has a higher thermal conductivity than the silicon oxide film that forms the interlayer insulating films 12, 13, and 14. In the present embodiment, the heat transfer layer 7s is formed so as to integrally cover the plurality of diode elements 8b.

(Main effects of this embodiment)
As described above, in the present embodiment, the temperature sensor 8 is provided on the first substrate 10 in the frame-like region 10 b extending between the outer edge of the display region 10 a and the sealing material 107. For this reason, since the temperature sensor 8 is close to the electro-optic layer 50, the temperature of the electro-optic layer 50 can be properly monitored by the temperature sensor 8. The frame-shaped region 10b is provided with a parting light-shielding layer 29a, but the temperature sensor 8 is provided at a position overlapping the light-transmitting portion 29e provided in a part of the frame-shaped region 10b. Therefore, the light shielding layer 29 hardly influences the monitoring result of the temperature of the electro-optic layer 50 by the temperature sensor 8. Specifically, since the translucent portion 29e is provided on the side opposite to the temperature sensor 8 (second substrate 20) with respect to the electro-optic layer 50, the portion of the electro-optic that overlaps the temperature sensor 8 in plan view. Similarly to the electro-optic layer 50 in the display region 10a, the layer 50 is also irradiated with the light source light L. Therefore, the temperature difference between the electro-optic layer 50 that overlaps the temperature sensor 8 in plan view and the electro-optic layer 50 in the display area 10a is small. The error with the temperature of 50 is small.

  The first substrate 10 has a plurality of interlayer insulating films 12, 13, 14 interposed between the electro-optic layer 50 and the temperature sensor 8. Since the heat transfer layer 7s having a higher thermal conductivity than the films 12, 13, and 14 is provided, the heat of the electro-optical layer 50 is efficiently transmitted to the temperature sensor 8 through the heat transfer layer 7s. Therefore, the temperature of the electro-optic layer 50 in the display area 10a can be properly monitored by the temperature sensor 8. Moreover, since the heat transfer layer 7s is light-shielding, it is difficult for light to leak from the translucent portion 29e of the frame-shaped region 10b.

[Embodiment 2]
FIG. 8 is an explanatory diagram schematically showing a cross-sectional configuration around the temperature sensor 8 formed in the electro-optical device 100 according to the second embodiment of the present invention. FIG. 9 is a circuit diagram of the temperature sensor 8 shown in FIG. FIG. 10 is an explanatory diagram schematically showing a planar configuration of the temperature sensor 8 shown in FIG. FIG. 11 is an explanatory diagram schematically showing another planar configuration of the temperature sensor 8 shown in FIG. Since the basic configuration of this embodiment and later-described embodiments 3 and 4 is the same as that of the first embodiment, common portions are denoted by the same reference numerals, and detailed description thereof is omitted. In FIGS. 10 and 11, the hole 13s is hatched to the right.

  As shown in FIGS. 8, 9, and 10, also in the first substrate 10 of the electro-optical device 100, as in the first embodiment, the opening 29 f (light transmission) of the parting light-shielding layer 29 a formed on the second substrate 20. The temperature sensor 8 (diode sensor 8a) is provided in the same layer as the semiconductor layer 30a of the pixel transistor 30 shown in FIG. Between the diode sensor 8 a and the electro-optic layer 50, a plurality of interlayer insulating films 12, 13, 14 (multiple insulating layers) are stacked, and a diode is formed using the interlayer of the interlayer insulating films 12, 13. A plurality of electrodes 6e to 6i connected to the element 8b are formed. Between the interlayer insulating films 13 and 14, a light-shielding heat transfer layer 7s that overlaps the temperature sensor 8 in a plan view is provided by a metal layer or the like that is the same layer as the relay electrode 7a shown in FIG. The heat transfer layer 7 s has a higher thermal conductivity than the interlayer insulating films 12, 13, and 14.

  Here, a plurality of heat transfer layers 7s are formed corresponding to the plurality of diode elements 8b. In the present embodiment, four heat transfer layers 7s are formed corresponding to the four diode elements 8b. Of the interlayer insulating films 13 and 14, the interlayer insulating film 13 (first insulating layer) located on the diode sensor 8a side is formed with a hole 13s at a position overlapping the heat transfer layer 7s, and a plurality of holes 13s are formed. The heat transfer layers 7s are present between the interlayer insulating films 13 and 14 and inside the holes 13s. Accordingly, the heat transfer layer 7s is close to the diode element 8b by the depth of the hole 13s. Therefore, the heat of the electro-optic layer 50 is efficiently transmitted to the diode sensor 8a via the heat transfer layer 7s, and thus the temperature of the electro-optic layer 50 can be properly monitored by the temperature sensor 8.

  In the present embodiment, each of the plurality of holes 13s reaches one electrode of the diode sensor 8a, and the heat transfer layer 7s is in contact with one electrode of the diode sensor 8a through the hole 13s. For example, one of the plurality of heat transfer layers 7s is in contact with the electrode 6e through the hole 13s, the other is in contact with the electrode 6f through the hole 13s, and the other is through the hole 13s. The other one is in contact with the electrode 6g and the other one is in contact with the electrode 6h through the hole 13s. For this reason, since the heat of the electro-optic layer 50 is efficiently transmitted to the temperature sensor 8 via the heat transfer layer 7s and the electrodes 6e to 6i, the temperature of the electro-optic layer 50 can be properly monitored by the temperature sensor 8. . Even in this case, since the plurality of heat transfer layers 7s are in contact with only one electrode of the diode sensor 8a, the operation of the diode sensor 8a is not hindered.

  As shown in FIG. 10, the plurality of holes 13s are alternately arranged with the contact holes 12s. However, as shown in FIG. 11, a mode in which the plurality of holes 13s are collectively arranged at positions separated from the plurality of contact holes 12s on one side may be employed.

[Embodiment 3]
FIG. 12 is an explanatory diagram schematically showing a cross-sectional configuration around the temperature sensor 8 formed in the electro-optical device 100 according to the third embodiment of the present invention. FIG. 13 is a process cross-sectional view illustrating an insulating film forming process in the manufacturing process of the electro-optical device 100 illustrated in FIG. 12.

  As shown in FIG. 12, also in the first substrate 10 of the electro-optical device 100, as in the first embodiment, the opening 29f (translucent portion 29e) of the parting light-shielding layer 29a formed in the second substrate 20 is viewed in plan view. 4 is provided with a temperature sensor 8 (diode sensor 8a) in the same layer as the semiconductor layer 30a of the pixel transistor 30 shown in FIG. Between the diode sensor 8 a and the electro-optic layer 50, a plurality of interlayer insulating films 12, 13, 14 (multiple insulating layers) are stacked, and a diode is formed using the interlayer of the interlayer insulating films 12, 13. A plurality of electrodes 6e to 6i connected to the element 8b are formed. Further, between the interlayer insulating films 13 and 14, a light-shielding heat transfer layer 7s that overlaps the temperature sensor 8 in plan view is provided by a metal layer or the like that is the same layer as the relay electrode 7a shown in FIG. The heat transfer layer 7 s has a higher thermal conductivity than the interlayer insulating films 12, 13, and 14. As in the second embodiment, the heat transfer layer 7s exists between the interlayer insulating films 13 and 14 and inside the hole 13s. The heat transfer layer 7s is in contact with one electrode through the hole 13s, such as in contact with the electrode 6e through the hole 13s.

  In the electro-optical device 100 configured as described above, the interlayer insulating films 12, 13, and 14 (multiple insulating layers) have a total thickness that overlaps the diode element 8 b constituting the temperature sensor 8 in plan view. 8 is thinner than the total thickness of the portion that does not overlap with the diode element 8b that constitutes 8 in plan view. In the present embodiment, the interlayer insulating films 12, 13, and 14 have a total thickness of a portion overlapping the diode element 8 b on the electro-optic layer 50 side in plan view with respect to the heat transfer layer 7 s, with respect to the heat transfer layer 7 s. It is thinner than the total thickness of the portion that does not overlap with the diode element 8b on the optical layer 50 side.

  More specifically, of the interlayer insulating films 13 and 14, the interlayer insulating film 14 (second insulating layer) that overlaps the heat transfer layer 7 s on the electro-optic layer 50 side is connected to the diode element 8 b that constitutes the temperature sensor 8. A recess 14s is formed in a region overlapping in plan view. For this reason, the interlayer insulating films 12, 13, and 14 have a total thickness of a portion overlapping the diode element 8b on the electro-optic layer 50 side in plan view with respect to the heat transfer layer 7s, and the electro-optic layer with respect to the heat transfer layer 7s. It is thinner than the total thickness of the portion that does not overlap with the diode element 8b on the 50th side. Here, the recess 14s is a through-hole penetrating the interlayer insulating film 14, and the insulating film 15 (third insulating layer) covering the heat transfer layer 7s exposed at the bottom of the recess 14s is formed in the plurality of insulating layers. include. Accordingly, for the interlayer insulating films 12, 13, and 14, the total thickness of the portion overlapping the diode element 8b in plan view on the electro-optic layer 50 side with respect to the heat transfer layer 7s is set to the electro-optic layer with respect to the heat transfer layer 7s. It can be made sufficiently thinner than the total thickness of the portion not overlapping with the diode element 8b on the 50 side.

  Therefore, although a plurality of layers of interlayer insulating films 12, 13, and 14 are interposed between the electro-optic layer 50 and the diode sensor 8a, the interlayer insulating films 12, 13, and 14 overlap with the diode element 8b in plan view. Since the total thickness of the portion is thin, the heat of the electro-optic layer 50 is easily transmitted to the diode sensor 8a. Therefore, the temperature of the electro-optic layer 50 in the display area 10a can be properly monitored by the diode sensor 8a. Further, since the insulating film 15 is formed, the heat transfer layer 7s is not exposed at the bottom of the recess 14s. Therefore, the influence on the electro-optic layer 50 from the heat transfer layer 7s can be suppressed.

  In the manufacturing process of the electro-optical device 100 having such a configuration, after forming the interlayer insulating film 14 in the process ST1 shown in FIG. 13, a photolithography process and an etching process are performed in the process ST2, and the through holes 14t are formed in the interlayer insulating film 14. Form. Next, in step ST3, the insulating film 15 is formed, and a recess 14s having the insulating film 15 at the bottom is formed.

[Embodiment 4]
FIG. 14 is an explanatory diagram schematically showing a cross-sectional configuration around the temperature sensor 8 formed in the electro-optical device 100 according to the fourth embodiment of the present invention.

  In the first embodiment and the like, the parting light shielding layer 29a (light shielding layer 29) is formed on the second substrate 20, but in the present embodiment, as shown in FIG. A parting light shielding layer 29a (light shielding layer 29) is formed of a black resin on the surface of the electro-optical layer 50. In the present embodiment, similarly to the first embodiment, the frame-like region 10b is formed with a light transmitting portion 29e (opening 29f). Further, the temperature sensor 8 is provided in the same layer as the semiconductor layer 30a of the pixel transistor 30 shown in FIG. Also in this embodiment, the temperature sensor 8 is a diode sensor 8a using a sensor semiconductor layer 30s that is the same layer as the semiconductor layer 30a, and a plurality of electrodes are provided between the interlayer insulating films 12 and 13 as in the first embodiment. 6e-6i are formed. A light-shielding heat transfer layer 7 s is provided between the interlayer insulating films 13 and 14.

  In the electro-optical device 100 configured as described above, since the parting light-shielding layer 29a (light-shielding layer 29) is composed of a black resin, the thermal conductivity is low. Even in such a case, since the temperature sensor 8 is provided at a position overlapping the light transmitting portion 29e (opening 29f) in plan view, heat is appropriately transmitted from the electro-optic layer 50 to the temperature sensor 8. Accordingly, the temperature of the electro-optic layer 50 can be properly monitored by the temperature sensor 8. In addition, since the heat transfer layer 7s is light-shielding, light that has passed through the light transmitting portion 29e (opening 29f) is difficult to leak.

[Other Embodiments]
In the above embodiment, the light transmitting portion 29e and the temperature sensor 8 are provided at one corner of the display region 10a. However, the light transmitting portion 29e and the temperature sensor 8 may be provided at a plurality of corners of the display region 10a. Further, the light transmitting portion 29e and the temperature sensor 8 may be provided along the side of the display area 10a. In the above embodiment, the temperature sensor 8 is configured by the diode sensor 8 a and the semiconductor layer that is the same layer as the pixel transistor 30 is used. However, a semiconductor layer that is different from the pixel transistor 30 may be used. In the above embodiment, the temperature sensor 8 is configured by the diode sensor 8a. However, the present invention may be applied to the case where the temperature sensor 8 is configured by a resistance wire using a semiconductor layer or the like. In the above embodiment, the light transmitting portion 29e is configured by the opening of the light shielding layer 29 (parting light shielding layer 29a). However, the light transmitting portion 29e only needs to have higher light transmittance than the light shielding layer 29. The translucent portion 29e may be formed by a notch formed in the portion 29, a discontinuous portion of the light shielding layer 29, or a portion where the light shielding layer 29 is partially thinned.

  The electro-optical device 100 to which the present invention is applied is not limited to a VA mode liquid crystal device. For example, the present invention may be applied when the electro-optical device 100 is a liquid crystal device in a TN (Twisted Nematic) mode or an OCB (Optically Compensated Bend) mode. In the above embodiment, the transmissive liquid crystal device is exemplified, but the present invention may be applied to a reflective liquid crystal device.

[Example of mounting on electronic devices]
An electronic apparatus using the electro-optical device 100 according to the above-described embodiment will be described. Here, as an electronic apparatus according to the present invention, a projection display device (liquid crystal projector) will be described as an example. FIG. 15 is an explanatory diagram of a projection display device (electronic apparatus) using the electro-optical device 100 to which the present invention is applied.

  In the projection display device 2100 shown in FIG. 15, the above-described transmission type electro-optical device 100 is used as a light valve. The projection display apparatus 2100 is provided with a lamp unit 2102 (light source unit) having a white light source such as a halogen lamp. The projection light emitted from the lamp unit 2102 is converted into three primary colors of R (red), G (green), and B (blue) by three mirrors 2106 and two dichroic mirrors 2108 arranged inside. To be separated. The separated projection light is guided to the light valves 100R, 100G and 100B corresponding to the respective primary colors. B light has a longer optical path than other R and G colors. Therefore, in order to prevent the loss, light of B color is guided through a relay lens system 2121 having an incident lens 2122, a relay lens 2123, and an output lens 2124. It is burned.

  In the projection display device 2100, three sets of liquid crystal devices including the electro-optical device 100 are provided corresponding to each of R color, G color, and B color. The configuration of the light valves 100R, 100G, and 100B is the same as that of the transmissive electro-optical device 100 described above. Each of the lights modulated by the light valves 100R, 100G, and 100B enters the dichroic prism 2112 from three directions. In the dichroic prism 2112, the R and B light beams are reflected at 90 degrees, and the G light beam is transmitted. Accordingly, after the primary color images are combined, a color image is projected onto the screen 2120 by the projection lens group 2114 (projection optical system).

(Other projection display devices)
In addition, about a projection type display apparatus, you may comprise the LED light source etc. which radiate | emit the light of each color as a light source part, and supply each color light radiate | emitted from this LED light source to another liquid crystal device. .

(Other electronic devices)
The electronic apparatus including the electro-optical device 100 to which the present invention is applied is not limited to the projection display device 2100 of the above embodiment. For example, you may use for electronic devices, such as a projection type HUD (head-up display), a direct view type HMD (head mounted display), a personal computer, a digital still camera, and a liquid crystal television.

3a ... Scanning line, 6a ... Data line, 6b ... Drain electrode, 6e, 6f, 6g, 6h, 6i, ... Electrode, 7a ... Relay electrode, 7s ... Heat transfer layer, 8 ... Temperature sensor, 8a ... Diode sensor, 8b ... Diode element, 9a ... Pixel electrode, 10 ... First substrate, 10a ... Display area, 10b ... Frame-like area, 15 ... Insulating film, 12, 13, 14 ... Interlayer insulating film, 12a, 12b, 12s, 13a, 14a ... Contact hole, 13s ... Hole, 14s ... Recess, 20 ... Second substrate, 21 ... Common electrode, 29 ... Light-shielding layer, 29a ... Light-shielding layer for parting, 29b ... Black matrix part, 29e ... Translucent part, 29f ... Opening Part 30... Pixel transistor 30 a semiconductor layer 30 s sensor semiconductor layer 50 electro-optical layer 100 electro-optical device 100 B, 100 G, 100 R lightval , 100a ... pixel, 100p ... liquid crystal panel, 101 ... data line driving circuit, 104 ... scanning line driving circuit, 107 ... seal material, 110 ... plate portion, 111 ... inner edge, 2100 ... projection type display device, 2102 ... lamp unit ( Light source unit), 2114... Projection lens group (projection optical system).

Claims (13)

A first substrate having a display region in which a pixel electrode is disposed and an outer peripheral region outside the display region, a second substrate facing the first substrate, and the first substrate and the second substrate are bonded together A sealing material; an electro-optic layer provided between the first substrate and the second substrate inside the sealing material; and between an outer edge of the display region in the outer peripheral region and the sealing material. A light shielding layer provided in a frame-like region extending along the
The first substrate is
A temperature sensor provided in the frame-shaped region;
A plurality of insulating layers stacked between the temperature sensor and the electro-optic layer;
A light-shielding heat transfer layer provided between the two insulating layers of the plurality of insulating layers so as to overlap the temperature sensor in plan view, and having a higher thermal conductivity than the plurality of insulating layers; ,
I have a,
Of the two insulating layers, a hole is formed in the first insulating layer located on the temperature sensor side,
The electro-optical device , wherein the heat transfer layer exists between the two insulating layers and inside the hole . The electro-optical device according to claim 1 .
The hole reaches one electrode of the temperature sensor;
The electro-optical device, wherein the heat transfer layer is in contact with the one electrode at the bottom of the hole. The electro-optical device according to claim 1 or 2,
The electro-optical device, wherein the plurality of insulating layers have a total thickness of a portion overlapping the temperature sensor in plan view smaller than a total thickness of a portion not overlapping the temperature sensor in plan view. The electro-optical device according to claim 3 .
The insulating layer of the plurality of layers has a total thickness of a portion overlapping the temperature sensor on the electro-optic layer side with respect to the heat transfer layer in a plan view, and the temperature on the electro-optic layer side with respect to the heat transfer layer. An electro-optical device characterized in that it is thinner than the total thickness of the part that does not overlap the sensor in plan view. The electro-optical device according to claim 4 .
Of the two insulating layers, a second insulating layer that overlaps the heat transfer layer on the electro-optical layer side is provided with a concave portion that overlaps the temperature sensor in plan view. The electro-optical device according to claim 5 .
The recess penetrates the second insulating layer;
The electro-optical device, wherein the plurality of insulating layers include a third insulating layer that covers the heat transfer layer exposed at a bottom of the recess. A first substrate having a display region in which a pixel electrode is disposed and an outer peripheral region outside the display region, a second substrate facing the first substrate, and the first substrate and the second substrate are bonded together A sealing material; an electro-optic layer provided between the first substrate and the second substrate inside the sealing material; and between an outer edge of the display region in the outer peripheral region and the sealing material. A light shielding layer provided in a frame-like region extending along the
The first substrate is
A temperature sensor provided in the frame-shaped region;
A plurality of insulating layers stacked between the temperature sensor and the electro-optic layer;
Have
The multiple layers of the insulating layer, the total thickness of the temperature sensor and overlap in plan view, rather thin than the total thickness of the portion not overlapping with the temperature sensor in a plan view,
In an area overlapping with at least a part of the temperature sensor in plan view, an opening formed in the light shielding layer, a notch formed in the light shielding layer, a discontinuous portion of the light shielding layer, or the light shielding layer is partially An electro-optical device characterized in that a thinned portion is provided . The electro-optical device according to claim 7 .
The electro-optical device, wherein the light shielding layer is provided on the second substrate. The electro-optical device according to claim 8 .
The electro-optical device, wherein the light shielding layer is formed of a black resin. The electro-optical device according to claim 9 ,
The electro-optical device, wherein the light shielding layer is formed on the first substrate. The electro-optical device according to any one of claims 1 to 10 ,
The first substrate includes a pixel transistor electrically connected to the pixel electrode,
The electro-optical device, wherein the temperature sensor includes a sensor semiconductor layer provided in the same layer as the semiconductor layer of the pixel transistor. The electro-optical device according to any one of claims 1 to 11 ,
The electro-optical device, wherein the temperature sensor is a diode sensor. An electronic apparatus characterized by comprising an electro-optical device according to any one of claims 1 to 12.