JP6614082B2 - Processing equipment - Google Patents

Description

  The present invention relates to a processing apparatus.

  As an apparatus for forming a film on a workpiece in a processing chamber using plasma, by applying electric power to a conductor on the workpiece side electrically connected to the workpiece in the processing chamber via a conductor on the power supply unit side, An apparatus for forming a film on a workpiece is known (for example, Patent Document 1).

JP2015-199991A

  In the apparatus described in Patent Document 1, a portion connecting the workpiece-side conductor and the power source-side conductor is covered with an insulator. However, when electric power is applied to the workpiece in the processing chamber through these conductors, plasma is generated radially with respect to the workpiece in the processing chamber and radiant heat is generated from the workpiece. Therefore, the insulation surrounding the conductor is insulated. There was a risk that the body would accumulate heat and deform. Note that such a problem may occur when etching is performed in an apparatus having a similar configuration. Therefore, in a processing apparatus that forms or etches a workpiece using plasma, a technique capable of suppressing deformation of an insulator covering a conductor has been desired.

  The present invention has been made to solve the above-described problems, and can be realized as the following forms.

  According to one embodiment of the present invention, a processing apparatus for forming a film or etching a conductive workpiece using plasma is provided. The processing apparatus includes: a processing chamber in which the work is disposed and the film formation or the etching is performed; a work-side conductor electrically connected to a conductive holding unit that holds the work; and in the processing chamber A power supply unit side conductor that is provided with at least a portion and to which power is applied: covers the power supply unit side conductor in the processing chamber, and connects the power supply unit side conductor and the workpiece side conductor in the processing chamber A power source side insulator having an opening at a place to be provided; and a metal cover body covering at least a part of the power source side insulator in the processing chamber and having an opening corresponding to the opening. The power supply unit-side insulator has a first part facing the work and a second part extending in a direction away from the work; and the cover body has a gap between at least the first part Establish Covers the first portion in contact with the power supply unit side insulator at said second site. In such a processing apparatus, the cover body covers the power source side insulator while providing a gap between the power source side insulator and the first part facing the workpiece, so that the first part is formed during film formation or etching. In addition, the temperature of the contact portion is increased at the second portion extending in the direction away from the workpiece, and the temperature of the contacted portion is increased during film formation or etching. It can suppress, and it can suppress that the temperature of a power supply part side insulator rises. Further, since the cover body is made of metal, heat accumulated in the power source side insulator after film formation or etching can be released from the cover body through the contact portion. As a result, since heat storage of the power supply unit side insulator is suppressed, deformation of the power supply unit side insulator can be suppressed.

  The present invention can also be realized in various forms other than the processing apparatus described above. For example, it can be realized in the form of a processing method for performing film formation or etching on a conductive workpiece.

The schematic block diagram which shows the structure of the processing apparatus in one Embodiment of this invention. The partial expanded sectional view of a processing apparatus. The partial expanded sectional view which shows the state to which the workpiece | work side conductor and the power supply part side conductor were connected. The figure which shows the processing apparatus of a comparative example.

A. Embodiment:
FIG. 1 is a schematic configuration diagram showing a configuration of a processing apparatus 100 according to an embodiment of the present invention. FIG. 1 shows XYZ axes orthogonal to each other. X direction positive direction is + X direction, negative direction is -X direction, Y direction positive direction is + Y direction, negative direction is -Y direction, Z direction positive direction is + Z direction, negative direction is -Z direction To do. In the present embodiment, the Y direction indicates the vertical direction, the + Y direction is above the vertical direction, and the −Y direction is below the vertical direction. In the present embodiment, the X direction and the Z direction indicate horizontal directions. This also applies to the subsequent drawings.

  The processing apparatus 100 is an apparatus that forms or etches a conductive workpiece W using plasma. The processing apparatus 100 forms a thin film on the workpiece W by a so-called plasma CVD (Chemical Vapor Deposition) method. In the present embodiment, the workpiece W is a plate-like metal plate used as a base material for a fuel cell separator. The processing apparatus 100 forms, for example, a conductive carbon thin film on the surface of the workpiece W.

  The processing apparatus 100 includes a processing chamber 10, a work-side conductor 50, a power supply unit-side conductor 30, a power supply unit-side insulator 40, and a cover body 110. In the present embodiment, the processing apparatus 100 further includes a transport unit 80 including a work-side conductor 50 and a work-side insulator 60, a power supply unit 20, a gas supply device 91, an exhaust device 92, and a transport device 75. And a control unit 90.

  The processing chamber 10 is a conductive member in which the work W is disposed and film formation or etching is performed on the work W. In the present embodiment, the processing chamber 10 is a box-shaped metal member having an opening 15 through which the workpiece W can be carried into and out of the processing chamber 10 and has a bottom below. In the processing chamber 10, a supply port 11 for supplying gas from the gas supply device 91 into the processing chamber 10, an exhaust port 12 for exhausting the inside of the processing chamber 10 by the exhaust device 92, and a power source side insulator And an insertion port 13 into which 40 is inserted. In the present embodiment, the processing chamber 10 is connected to ground.

  The transport unit 80 includes a holding unit 71, a work-side conductor 50, and a work-side insulator 60. The transfer unit 80 is located in the + Y direction of the processing chamber 10 and is movable along the Y direction. The transport unit 80 transports the work W in the −Y direction during film formation or etching, and transports the work W into the processing chamber 10. In the present embodiment, the −Y direction is also referred to as “transport direction”. In the present embodiment, the transport unit 80 further includes an insulator 77, a lid 78, and a seal member 76.

  The lid 78 is a plate-like conductive member formed so as to cover the opening 15 of the processing chamber 10 when it moves in the −Y direction and comes into contact with the processing chamber 10. The lid 78 is provided with an insulator 77 connected to the workpiece-side insulator 60. Further, the lid 78 is provided with a seal member 76 on the surface in the −Y direction side for contacting the processing chamber 10 to keep the inside of the processing chamber 10 airtight when moved in the −Y direction. In the present embodiment, the seal member 76 uses an O-ring.

  The holding unit 71 is a conductive member that holds the workpiece W. In the present embodiment, the end portion in the −Y direction of the holding portion 71 has a hook shape, and the holding portion 71 holds the workpiece W by hooking the hook-shaped portion in a hole provided in the workpiece W. To do. The holding part 71 is electrically connected to the work-side conductor 50 in the work-side insulator 60. On the other hand, the holding portion 71 is insulated from the lid 78 by the work-side insulator 60 and the insulator 77.

  The transport device 75 is a device including an actuator. In the present embodiment, the transport unit 80 is connected to the transport device 75, and can be moved along the Y direction by a control unit 90 (described later) controlling an actuator of the transport device 75.

  In the present embodiment, the processing apparatus 100 includes a preliminary chamber 200 in the + Y direction of the processing chamber 10. The preliminary chamber 200 includes a vacuum pump, a heater, and a door. The workpiece W is carried into the preliminary chamber 200 from the door and is held by the holding unit 71. In the preliminary chamber 200, before film formation or etching is performed in the processing chamber 10, the work W is heated by a heater in a vacuum state, whereby moisture and organic substances attached to the work W are removed. In the present embodiment, the transfer unit 80 transfers the workpiece W from the preliminary chamber 200 into the processing chamber 10 when moving in the −Y direction, and transfers the workpiece W from the processing chamber 10 to the preliminary chamber 200 when moving in the + Y direction. Transport to.

The gas supply device 91 supplies a carrier gas and a source gas into the processing chamber 10 via the supply port 11. In the present embodiment, the gas supply device 91 supplies, for example, nitrogen (N ₂ ) gas or argon (Ar) gas as a carrier gas, and supplies, for example, pyridine (C ₅ H ₅ N) gas as a source gas. The gas supply device 91 can also supply argon gas as an etching gas.

  The exhaust device 92 is a device that can exhaust the gas in the processing chamber 10 via the exhaust port 12. The exhaust device 92 is configured by, for example, a rotary pump, a diffusion pump, a turbo molecular pump, or the like. The exhaust device 92 exhausts and evacuates the inside of the processing chamber 10 through the exhaust port 12 before film formation or etching is performed.

  The power supply unit 20 is a device provided outside the processing chamber 10. The power supply unit 20 applies power to the power supply unit side conductor 30 to turn the raw material gas supplied into the processing chamber 10 into plasma. In the present embodiment, the power supply unit 20 applies -3 kV power to the power supply unit side conductor 30 during film formation or etching. The power applied to the power supply unit side conductor 30 is applied to the work W via the power supply unit side conductor 30, the work side conductor 50, and the holding unit 71.

  The control unit 90 controls the operation of the entire processing apparatus 100. The control unit 90 includes a CPU and a memory. The CPU controls the processing device 100 by executing a program stored in the memory. This program may be recorded on various recording media. In the present embodiment, the control unit 90 controls the transfer device 75 to move the transfer unit 80 in the −Y direction, thereby holding the holding unit 71, the work-side conductor 50, the work-side insulator 60, and the like in the processing chamber 10. While the work W is carried in, the lid 78 (seal member 76) is brought into contact with the processing chamber 10 to keep the inside of the processing chamber 10 airtight. Further, the control unit 90 controls the exhaust device 92 to exhaust the inside of the processing chamber 10, controls the gas supply device 91 to supply the source gas and the like into the processing chamber 10, and controls the power source unit 20 to supply power. Electric power is applied to the work W via the part-side conductor 30, the work-side conductor 50 and the holding part 71.

  Hereinafter, the workpiece side conductor 50, the workpiece side insulator 60, the power source side conductor 30, the power source side insulator 40, and the cover body 110 will be described with reference to FIG. 2 and FIG. Will be described in detail.

  FIG. 2 is a partially enlarged cross-sectional view of the processing apparatus 100. FIG. 3 is a partial enlarged cross-sectional view showing a state in which the workpiece-side conductor 50 and the power supply unit-side conductor 30 are connected. In FIGS. 2 and 3, the work W held by the holding portion 71 is shown in a simplified manner. The workpiece W is located in the −X direction of the power supply unit side insulator 40.

  The work-side conductor 50 is a conductive member that is electrically connected to the holding portion 71 (FIG. 1). The end portion 51 of the work-side conductor 50 faces the −Y direction. In the present embodiment, the work-side conductor 50 includes a first conductor 57, a second conductor 55 disposed inside the −Y direction side of the first conductor 57, and a spring 53. The −Y direction side of the first conductor 57 and the second conductor 55 have a substantially bar shape extending along the Y direction. The + Y direction side of the first conductor 57 is formed to branch from the holding portion 71 and is electrically connected to the workpiece W. The second conductor 55 is electrically connected to the first conductor 57. The spring 53 has conductivity, and absorbs an impact when the second conductor 55 contacts the power supply unit side conductor 30.

  The work-side insulator 60 is a member that covers the work-side conductor 50 and the holding portion 71 (FIG. 1). From the work-side insulator 60, the hook-shaped portion of the holding portion 71 is exposed (FIG. 1). Moreover, the workpiece | work side insulator 60 is provided with the opening part 61 opened in the edge part of -Y direction. From the opening 61, the end 51 in the −Y direction of the work-side conductor 50 is exposed in the −Y direction.

  The power supply unit side conductor 30 is a conductive member that is at least partially provided in the processing chamber 10 and to which power is applied. The power supply unit side conductor 30 has an upper surface 31 that is a surface in the + Y direction. In the present embodiment, the power supply unit side conductor 30 has a tip 32 and a main body 34, and power is applied to the main body 34 from the power supply unit 20 outside the processing chamber 10 during film formation or etching.

  The power source side insulator 40 covers the power source side conductor 30 in the processing chamber 10, and an opening 41 is provided at a location where the power source side conductor 30 and the work side conductor 50 are connected in the processing chamber 10. It is an insulator having. In the present embodiment, the opening 41 opens on the upper surface 31 of the distal end portion 32 of the power supply unit side conductor 30. In the present embodiment, the power source side insulator 40 is configured by connecting a first insulator 43 having an opening 41 and a second insulator 44 covering the main body 34 of the power source side conductor 30. Yes. The first insulator 43 is a cylindrical insulator having an end portion in the + Y direction and an end portion in the + X direction and having an L-shaped cross-sectional shape in the XY cross section. The second insulator 44 is a cylindrical insulator extending along the X direction. An opening 41 is provided at the end of the first insulator 43 in the + Y direction, and the end of the second insulator 44 in the −X direction is fitted into the end of the first insulator 43 in the + X direction. It is. The first insulator 43 has a first portion 40 a that faces the workpiece W. In the present embodiment, the first portion 40a is formed in the processing chamber 10 when the work-side conductor 50 (end 51) contacts the power-source-side conductor 30 (upper surface 31) through the opening 41 (FIG. 3). Facing the workpiece W located in In the present embodiment, the first portion 40a is a portion along the Y direction of the first insulator 43 and is a portion in the −X direction shown in FIGS. The first insulator 43 and the second insulator 44 have a second portion 40 b extending in a direction away from the workpiece W in the processing chamber 10. In the present embodiment, the second portion 40b is a portion along the X direction of the first insulator 43 and the second insulator 44 and is a portion extending in the + X direction. In the present embodiment, the second part 40b is connected to the first part 40a.

The first insulator 43, the second insulator 44, the work-side insulator 60, and the insulator 77 can be formed of ceramics such as alumina (Al ₂ O ₃ ) or silicon dioxide (SiO ₂ ), for example. In addition, when the conveyance gap of the direction which cross | intersects a conveyance direction arises in the conveyance part 80, the workpiece | work side insulator 60 and the power supply part side insulator 40 contact, and the workpiece | work side insulator 60 and the power supply part side insulator 40 are contacted. From the viewpoint of suppressing breakage, the insulator (first insulator 43) in the opening 41 portion of the power source side insulator 40 is formed of a material having a lower hardness than the workpiece side insulator 60. Is preferred. For example, the first insulator 43 is preferably formed of a fluorine-based resin such as polytetrafluoroethylene (PTFE) or polyfluoroethylene (PFA). In the present embodiment, the first insulator 43 is made of PTFE, and the second insulator 44, the work-side insulator 60, and the insulator 77 are made of alumina.

  The cover body 110 is a metal member including an opening 111 that covers at least a part of the power supply unit side insulator 40 in the processing chamber 10 and is opened at a position corresponding to the opening 41. The cover body 110 is a heat radiating member that releases the heat of the power source side insulator 40. As shown in FIGS. 2 and 3, the cover body 110 is in contact with the power source side insulator 40 at the second portion 40 b while providing a gap with the first portion 40 a. In the present embodiment, the cover body 110 contacts the second insulator 44 having the second portion 40b while providing a gap between the cover body 110 and the first insulator 43 having the first portion 40a. The gap between the cover body 110 and the first portion 40a functions as a vacuum layer between the first insulator 43 and the cover body 110 when the processing chamber 10 is evacuated during film formation or etching. The cover body 110 can be formed of, for example, stainless steel.

  In the processing apparatus 100, the conveyance unit 80 moves in the −Y direction as illustrated in FIG. 3, and the work-side conductor 50 comes into contact with the power-source-side conductor 30 through the opening 41. The electric power applied to 30 is applied to the workpiece W via 50 and the holding unit 71. As shown in FIG. 3, the end portion in the −Y direction of the work-side insulator 60 is formed at the opening 41 when the work-side conductor 50 comes into contact with the upper surface 31 of the power supply unit-side conductor 30 through the opening 41. Located inside. In the present embodiment, when the lid 78 (seal member 76) comes into contact with the processing chamber 10, the end portion 51 of the work-side conductor 50 comes into contact with the upper surface 31 of the distal end portion 32 of the power supply-side conductor 30. In this way, the dimensions of each part are set.

  FIG. 3 further shows the width W1, the widths W2 and W3, and the distance L1, the distance L2 and the distance L3. In the present embodiment, a gap having a width W <b> 1 is provided between the power source side insulator 40 (first insulator 43) and the workpiece side insulator 60. The gap of the width W1 is such that when the transport unit 80 moves in the -Y direction, the work side insulator 60 and the power source side insulator 40 come into contact with each other and the work side insulator 60 or the power source side insulator 40 is damaged. (Wearing) is suppressed. The width W1 is 1.5 mm or less. Further, the distance L1 along the Y direction of the gap portion with the width W1 is about 3.0 mm or more. By doing in this way, it is suppressed that a plasma penetrate | invades into the clearance gap of the width W1, the location where the workpiece | work side insulator 60 and the workpiece | work side conductor 50 contact, the power supply part side conductor 30, and a power supply part side insulator. It is suppressed that plasma penetrates into the place where 40 contacts. Further, even when the insulating foreign matter generated in the processing chamber 10 falls into the opening 41, the plasma is prevented from entering the place where the foreign matter and the power source side conductor 30 are in contact with each other. The As a result, the occurrence of abnormal discharge at these locations is suppressed. In the present embodiment, a gap having a width W2 is provided between the workpiece-side insulator 60 and the workpiece-side conductor 50 (first conductor 57). The width W2 is greater than 0 mm and not greater than 1.5 mm. Further, the distance L2 along the Y direction of the gap portion of the width W2 is about 3.0 mm or more. By doing in this way, even if the plasma enters the gap portion of the width W1, the plasma reaches the place where the workpiece-side insulator 60 and the workpiece-side conductor 50 (first conductor 57) are in contact with each other. Therefore, the occurrence of abnormal discharge at the location where the workpiece-side insulator 60 and the workpiece-side conductor 50 are in contact with each other is further suppressed. Further, in the present embodiment, a gap having a width W <b> 3 is provided between the first insulator 43 and the second insulator 44 and the power supply unit side conductor 30. The width W3 is greater than 0 mm and not greater than 1.5 mm. The distance L3 along the X direction of the gap portion with the width W3 is about 3.0 mm or more. By doing in this way, even if the plasma penetrates into the gap portion of the width W1, the plasma may penetrate to the place where the power supply unit side conductor 30 and the power supply unit side insulator 40 are in contact with each other. Since it is suppressed, the occurrence of abnormal discharge at the location where the power supply unit side conductor 30 and the power supply unit side insulator 40 are in contact is further suppressed. Note that the above values are examples, and the values of the width W1, the width W2, and the width W3, and the distance L1, the distance L2, and the distance L3 are set to a width and a distance (dimension) that can suppress the intrusion of the plasma. It only has to be.

  In the processing apparatus 100 described above, when the workpiece W is held by the holding unit 71 of the transfer unit 80, the control unit 90 controls the transfer device 75 to move the transfer unit 80 in the -Y direction, and the work side conductive The body 50 is brought into contact with the upper surface 31 of the power supply unit side conductor 30 through the opening 41, and the lid 78 (seal member 76) is brought into contact with the processing chamber 10. Next, the control unit 90 controls the exhaust device 92 to exhaust and evacuate the inside of the processing chamber 10, and controls the gas supply device 91 to supply the source gas or the etching gas into the processing chamber 10. Filming or etching is performed by controlling the unit 20 to apply power to the workpiece W via the power source unit side conductor 30, the workpiece side conductor 50, and the holding unit 71. The control unit 90 controls the gas supply device 91 to stop the supply of the source gas and the like, controls the power supply unit 20 to stop the application of power, and ends the film formation or etching. Next, the control unit 90 controls the exhaust device 92 to restore the pressure in the processing chamber 10, controls the transfer device 75, moves the transfer unit 80 in the + Y direction, and moves the workpiece-side conductor 50 from the upper surface 31. The workpiece-side conductor and the workpiece W are transported out of the processing chamber 10 by being separated from each other. As described above, film formation or etching by the processing apparatus 100 is performed.

The effect by the processing apparatus 100 of this embodiment demonstrated above is demonstrated using figures.
FIG. 4 is a diagram illustrating a processing apparatus 300 of a comparative example. The processing apparatus 300 does not include the cover body 110 that covers the power source side insulator 40. Other configurations of the processing apparatus 300 are the same as those of the processing apparatus 100 of the embodiment. At the time of film formation or etching, electric power is applied to the workpiece W, and plasma is generated radially with respect to the workpiece W in the processing chamber 10 and radiant heat is generated from the workpiece W, so that it faces the workpiece W positioned in the −X direction. The temperature of the power supply side insulator 40 having the first portion 40a rises. Since the insulator is less likely to dissipate heat than metal, the temperature of the power source side insulator 40 is less likely to decrease even after film formation or etching, and when the film formation or etching is repeated, the power source side insulator 40 stores heat. As shown in FIG. 4, the first portion 40 a facing the work W of the power source side insulator 40 may be deformed. When such deformation occurs, as shown in FIG. 4, the work-side conductor 50 comes into contact with the + Y-direction end of the power-supply-side insulator 40, and the work-side conductor 50 reaches the power-supply-side conductor 30. May be hindered. In such a case, a conduction failure may occur between the work-side conductor 50 and the power supply unit-side conductor 30, and power may not be applied to the work W.

  In the processing apparatus 100 of the present embodiment, the cover body 110 covers the power supply unit side insulator 40 while providing a gap between the cover part 110 and the first portion 40a facing the work W of the power supply unit side insulator 40. The temperature of the first portion 40a can be suppressed from increasing during etching, and the cover body 110 contacts the power source side insulator 40 at the second portion 40b extending in the direction away from the workpiece W. It can suppress that the temperature of the location which contacts at the time of etching rises, and can suppress that the temperature of the power supply part side insulator 40 rises. Further, since the cover body 110 is made of metal, the heat accumulated in the power source side insulator 40 after film formation or etching can be released from the cover body 110 through the contact portion. As a result, since the heat storage of the power supply unit side insulator 40 is suppressed, the power supply unit side insulator 40 can be prevented from being deformed.

  Moreover, in the processing apparatus 100 of this embodiment, since it can suppress that the power supply part side insulator 40 deform | transforms, the conduction | electrical_connection defect between the workpiece | work side conductor 50 and the power supply part side conductor 30 is suppressed. be able to.

  For example, when the work-side insulator 60 is formed of alumina, silica, or the like, and the first insulator 43 having the first portion 40a is formed of PTFE, the power-source-side insulator 40 as shown in FIG. The deformation is more likely to occur. This is because PTFE has lower hardness and lower decomposition temperature than alumina and silica. However, in the processing apparatus 100 of this embodiment, since the temperature of the first part 40a can be suppressed, the first part 40a is made of a material having a hardness lower than that of the work-side insulator 60, such as PTFE. Even if the conveyance part 80 is formed in a direction crossing the conveyance direction, the power supply side insulator 40 and the work side insulator 60 are prevented from being damaged due to contact with each other. can do.

  Further, in the processing apparatus 100 of the present embodiment, the cover body 110 is in contact with the power source side insulator 40 in the second insulator 44 formed of alumina having a relatively high melting point, so that the cover body 110 is covered during film formation or etching. It is possible to suppress the heat conduction from the body 110 to the second insulator 44 and the deformation of the power supply side insulator 40.

B. Variations:
In the above-described embodiment, the Y direction is the vertical direction, and the X direction and the Z direction are the horizontal directions. On the other hand, the X direction may be a vertical direction, and the Z direction may be a vertical direction. That is, the transport unit 80 may be movable along the horizontal direction.

  In the above-described embodiment, the cover body 110 is in contact with the second insulator 44. On the other hand, the cover body 110 may be in contact with the first insulator 43 at the second portion 40 b of the first insulator 43. Further, the cover body 110 may be in contact with the first insulator 43 at a portion of the first insulator 43 that does not face the workpiece W (a portion in the + X direction of the first insulator 43 shown in FIGS. 2 and 3). Good.

  In the above-described embodiment, the cover body 110 may be formed of other metals. For example, the cover body 110 may be formed of the same material as the workpiece W. For example, when the workpiece W is titanium (Ti), the cover body 110 may be formed of titanium.

  In the above-described embodiment, the −Y direction end portion of the holding portion 71 has a hook shape. On the other hand, the -Y direction end portion of the holding portion 71 may have another shape as long as it can hold the workpiece W, for example, a clip shape.

  In the above-described embodiment, the power supply unit 20 applies power to the power supply unit side conductor 30, and the processing chamber 10 is connected to the ground. On the other hand, the power supply unit 20 may generate an electric field for generating plasma in the processing chamber 10 by applying electric power to the power supply unit side conductor 30 and the processing chamber 10.

  The present invention is not limited to the above-described embodiments and modifications, and can be realized with various configurations without departing from the spirit of the present invention. For example, the technical features in the embodiments and modifications corresponding to the technical features in each embodiment described in the summary section of the invention are intended to solve part or all of the above-described problems, or In order to achieve part or all of the effects, replacement or combination can be appropriately performed. Moreover, elements other than the elements described in the independent claims among the constituent elements in the embodiment and each modification described above are additional elements and can be omitted as appropriate.

DESCRIPTION OF SYMBOLS 10 ... Processing chamber 11 ... Supply port 12 ... Exhaust port 13 ... Insertion port 15 ... Opening part 20 ... Power supply part 30 ... Power supply part side conductor 31 ... Upper surface 32 ... Tip part 34 ... Main part 40 ... Power supply part side insulator 40a ... 1st site | part 40b ... 2nd site | part 41 ... Opening part 43 ... 1st insulator 44 ... 2nd insulator 50 ... Work piece side conductor 51 ... End part 53 ... Spring 55 ... 2nd conductor 57 ... 1st conductor DESCRIPTION OF SYMBOLS 60 ... Work side insulator 61 ... Opening part 71 ... Holding part 75 ... Conveying device 76 ... Sealing member 77 ... Insulator 78 ... Lid 80 ... Conveying part 90 ... Control part 91 ... Gas supply apparatus 92 ... Exhaust apparatus 100 ... Processing apparatus DESCRIPTION OF SYMBOLS 110 ... Cover body 111 ... Opening part 200 ... Preliminary chamber 300 ... Processing apparatus L1 ... Distance L2 ... Distance L3 ... Distance W ... Work W1 ... Width W2 ... Width W3 ... Width

Claims (1)

A processing apparatus for performing film formation or etching on a conductive workpiece using plasma,
A processing chamber in which the work is arranged and the film formation or the etching is performed;
A workpiece-side conductor electrically connected to a conductive holding portion for holding the workpiece;
A power supply side conductor to which at least a part is provided in the processing chamber and power is applied;
A power source side insulator that covers the power source side conductor in the processing chamber and has an opening at a location where the power source side conductor and the workpiece side conductor are connected in the processing chamber;
A metal cover that covers at least a portion of the power source side insulator in the processing chamber and has an opening corresponding to the opening;
The power supply side insulator has a first part facing the work, and a second part extending in a direction away from the work,
The cover body covers the first part while providing a gap with at least the first part, and contacts the power source side insulator in the second part.
Processing equipment.

Images