JP6622735B2 - LIGHT EMITTING ELEMENT HAVING BEAM-FORMING STRUCTURE AND MANUFACTURING METHOD THEREOF - Google Patents

Description

Citation reference of related applications

  This application includes Taiwan Patent Application No. 105104034 filed on February 5, 2016, and Chinese Patent Application No. 2016161008214 filed on February 5, 2016 claiming priority of the Taiwan Patent Application. The entire disclosures of both applications are incorporated herein by reference.

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TECHNICAL FIELD The present disclosure relates to a light emitting device and a method for manufacturing the same, and more particularly to a chip scale type package light emitting device including a light emitting diode (LED) semiconductor die that generates electromagnetic radiation during operation.
Explanation of related technology

  Recent chip scale package (CSP) type LED devices have promising advantages, and therefore, more and more attention is focused on their development. As a general example, a white light CSP type LED element as shown in FIG. 1A is usually constituted by a flip chip type LED semiconductor die 71 having a small chip scale size and a photoluminescence structure 72 covering the LED semiconductor die. Has been. The photoluminescence structure 72 covers the four side edges of the upper surface and the edge surface of the LED semiconductor die 71, and the CSP type LED element emits light from the upper surface and the four side edges of the edge surface. Yes. Therefore, light is emitted from five surfaces in different directions of the CSP-type LED element to form a five-surface light source.

  Compared with plastic chip carrier (PLCC) LED elements with leads, CSP type LED elements show the following advantages. (1) Since the bonding wire and the lead frame are not required, the material cost is greatly reduced. (2) A lead frame is not used between the LED semiconductor die and the mounting substrate, generally a printed circuit board (PCB), and the thermal resistance therebetween is further reduced. Therefore, even if the drive current is the same, the LED operating temperature is lowered. In other words, the light output of many CSP type LED elements can be obtained with little electric energy. (3) Since the operating temperature is low, the LED semiconductor quantum efficiency of the CSP type LED element is increased. (4) Since the form factor of the light source is very small, the degree of freedom in designing the LED device at the module level increases. (5) Since the light emitting area of the CSP type LED element is small and close to a point light source, the optical lens can be easily designed. Since the CSP-type LED element is compact, it can be designed to generate low etendue light with high light intensity in some projection illuminations such as automobile headlights.

  Although the CSP type LED device has many advantages, the comparative five-surface-emitting CSP type LED device has a larger viewing angle. This viewing angle is generally in the range of 140 to 160 degrees depending on various geometric dimensions for a particular CSP type LED element. The viewing angle of the five-surface-emitting CSP type LED element is still much larger than the typical viewing angle of about 120 degrees of the PLCC type LED element. A CSP type LED element having a large viewing angle is advantageous in some applications, but is not suitable for a specific application for a projection light source having a small viewing angle. For example, in the case of an application such as an edge illumination backlight device or a projection light bulb, a high light energy transmission efficiency is achieved by defining a light source with a small viewing angle. Therefore, it is necessary to provide a CSP type LED element having a smaller viewing angle that meets the specifications of such applications.

  An optical lens can be used with the LED element to shape the spatial radiation pattern, for example, to enlarge or reduce the viewing angle. However, such an approach using an optical lens is not suitable for a specific application with spatial constraints. If an optical lens is further added to the CSP type LED element, not only the manufacturing cost increases, but also occupies a large whole space, so that one of the great advantages of the CSP type LED element that the form factor is small is negated.

  FIG. 1B shows another type of comparative “top-emitting” CSP type LED element that can reduce the viewing angle. This CSP type LED element is constituted by a flip chip type LED semiconductor die 71, a photoluminescence structure 72 and a reflective structure 73. The photoluminescence structure 72 is disposed on the upper surface of the LED semiconductor die 71, and the reflective structure 73 covers the four side edges of the edge surface of the LED semiconductor die 71. In such a structure, the light is derived from the upper surface of the CSP type LED element, that is, the light is emitted from the upper surface, so that a small viewing angle corresponding to the light is obtained. The viewing angle of the top-emitting CSP type LED element for comparison is typically 120 degrees to 130 degrees. Regarding the composition material used in manufacturing the CSP type LED element shown in FIG. 1B, the reflective structure 73 is formed by mixing light scattering particles with a polymer resin material, and the concentration of the light scattering particles is generally Is made higher than 30 wt% to function as a light reflector. However, in the case of the reflective structure 73 formed of this composition material, it is not yet sufficient as a reflector that repels the light emitted from the LED semiconductor die 71 or the photoluminescence structure 72. If the reflectance is not high enough, it is inevitable that some photons will disappear in the reflective structure 73. For example, as shown in FIG. 1C, the photon penetrates the reflective structure 73 along the optical path P and is finally absorbed at the end point P ′ in the reflective structure 73. Therefore, the optical efficiency of the CSP-type LED element is reduced due to the disappearance of photons in the reflective structure 73. Furthermore, in the manufacturing method for manufacturing the CSP type LED element shown in FIG. 1C, an additional manufacturing process for forming the reflective structure 73 by covering the four side edges of the edge surface of the LED semiconductor die 71 with a reflective material. Is included. If the reflective structure 73 is manufactured using a high-precision mold, the accuracy of arrangement increases and the manufacturing cost increases significantly.

Overview

  In view of the above deficiencies, an improved CSP type LED device comprising a beam shaping structure according to the present disclosure is disclosed. Adjust viewing angle or spatial radiation pattern to adapt to various applications without using inefficient reflectors where light energy loss is excessive due to light being trapped in CSP type LED device structure Can do. Another advantage of CSP-type LED devices is that a streamlined manufacturing process can be used to maintain a small form factor without increasing manufacturing costs.

  It is an object of some embodiments of the present disclosure to provide a CSP type LED device and a manufacturing method thereof. By appropriately designing the beam shaping structure (BSS), the viewing angle of the present CSP type LED element is compared with a comparative five-surface emitting CSP type LED element having a viewing angle of 140 to 160 degrees. As it decreases from about 120 degrees to about 140 degrees, the form factor remains substantially the same. A CSP-type LED element can be manufactured by using a relatively efficient and inexpensive manufacturing process. According to another embodiment of the BSS according to the present disclosure, the viewing angle of the CSP-type LED element is expanded to more than about 160 degrees compared to a comparative five-surface-emitting CSP-type LED, and the specification for a specific application is increased. Can be satisfied.

  To achieve the above objective, a CSP type LED device with a smaller viewing angle according to some embodiments of the present disclosure comprises an LED semiconductor die, a photoluminescent structure, and a beam shaping structure. An LED semiconductor die is a flip-chip LED semiconductor die having an upper surface, a substantially parallel and opposing lower surface, an edge surface, and a set of electrodes. The photoluminescence structure is formed over the upper surface and the edge surface of the LED semiconductor die, and the BSS is intentionally arranged to cover the edge portion of the photoluminescence structure. The BSS is manufactured from a composition material composed of light scattering particles dispersed in a polymeric resin material at a relatively low concentration (eg, about 30 wt% or less, about 20 wt% or less, or about 10 wt% or less). Therefore, a part of the light emitted from the four side edges of the LED semiconductor die and the four side edges of the photoluminescence structure and traveling in the BSS substantially in the horizontal direction can be scattered and turned in a substantially vertical direction. . Thereby, the light intensity in the substantially vertical direction increases, and the viewing angle of the entire CSP-type LED element decreases.

  To achieve the above objective, a CSP type LED device with a larger viewing angle according to some embodiments of the present disclosure comprises an LED semiconductor die, a photoluminescent structure, a supernatant light transmission layer, and a BSS. An LED semiconductor die is a flip-chip LED semiconductor die having an upper surface, a substantially parallel and opposing lower surface, an edge surface, and a set of electrodes. A photoluminescent structure is formed over the top surface and the edge surface of the LED semiconductor die. The supernatant light transmission layer is intentionally disposed on the photoluminescence structure so that the BSS covers the upper surface of the supernatant light transmission layer. The BSS is made from a composition material composed of light scattering particles that are dispersed in a polymeric resin material at a relatively low concentration (eg, about 30 wt% or less, about 20 wt% or less, or about 10 wt% or less). Therefore, the viewing angle of the entire CSP-type LED element can be increased by scattering the partial light emitted from the LED semiconductor die and the photoluminescence structure in the substantially vertical direction and turning it in the substantially horizontal direction.

  To achieve the above objective, another monochromatic CSP type LED device with a small viewing angle according to some embodiments of the present disclosure comprises an LED semiconductor die and a BSS. An LED semiconductor die is a flip-chip LED semiconductor die having an upper surface, a substantially parallel and opposing lower surface, an edge surface, and a set of electrodes. The BSS covers at least the edge surface of the LED semiconductor die. The BSS is made from a composition material composed of light scattering particles dispersed in a polymeric resin material and having a relatively low concentration (eg, about 30 wt% or less, about 20 wt% or less, or about 10 wt% or less). Therefore, the viewing angle of the entire CSP-type LED element can be reduced by scattering the partial light emitted from the LED semiconductor die substantially in the horizontal direction and turning it in the substantially vertical direction.

  In order to achieve the above object, a method for manufacturing a CSP type LED device according to some embodiments of the present disclosure includes the following. That is, 1) a plurality of LED semiconductor dies are disposed on a release layer to form an array of LED semiconductor dies, and 2) a plurality of connected package structures are formed on the array of LED semiconductor dies, In some cases, the beam shaping structure is formed as part of the package structure, and 3) the plurality of package structures are separated separately, in which case the release layer can be removed before or after the plurality of package structures are separated individually It is.

  Thus, the present disclosure provides at least the following advantages. That is, since the BSS of the CSP type LED element has a light scattering particle having a relatively low concentration (for example, about 30 wt% or less), the partial light emitted from the LED semiconductor die and / or the photoluminescence structure passes through the BSS. When traveling, it is scattered in another direction. Therefore, the light intensity in the original traveling direction is lowered, and the viewing angle of the CSP type LED element is changed accordingly. Appropriate design of the BSS reduces the loss of excess photons in the reflective structure as occurs in a comparative top-emitting CSP LED element. As a result, overall luminous efficiency can be improved.

  As an example, if the BSS is intentionally disposed so as to surround the side edge of the CSP type LED element, the partial light originally traveling in the substantially horizontal direction of the LED semiconductor die is scattered in the substantially vertical direction while traveling through the BSS. The light that travels essentially in the vertical direction may not be affected by the BSS scattering effect. For this reason, the intensity of the light traveling in the substantially horizontal direction of the CSP type LED element is reduced, whereas the intensity of the light traveling in the substantially vertical direction of the CSP type LED element is increased, so that the viewing angle is reduced overall. In other words, a CSP type LED device according to some embodiments of the present disclosure can obtain a smaller viewing angle of about 120 degrees to about 140 degrees.

  As another example, when the BSS is disposed above the LED semiconductor die with a spacer interposed therebetween, the intensity of light traveling in the substantially horizontal direction of the CSP type LED element is increased, and in the substantially vertical direction of the CSP type LED element. The intensity of the traveling light decreases. In other words, the overall viewing angle can be expanded to, for example, about 160 degrees or about 170 degrees.

  In addition, the BSS of some embodiments of the present disclosure can be manufactured using well-controlled but inexpensive manufacturing processes. Further, the BSS is incorporated in the CSP type LED element without causing an increase in the geometric outer shape of the entire element. Therefore, by adjusting the viewing angle of the CSP type LED element, it becomes sufficiently suitable for various applications.

  Other aspects and embodiments of the present disclosure are also contemplated. The above summary and the following detailed description do not limit the disclosure to any particular embodiment, but merely describe some embodiments of the disclosure.

and It is a schematic cross section which shows the CSP type | mold LED element for a comparison. It is a schematic cross section which shows the light loss mechanism of the CSP type | mold LED element for a comparison. It is a 3D model perspective view which shows the CSP type | mold LED element by one Embodiment of this indication. It is a schematic cross section showing a CSP type LED device according to an embodiment of the present disclosure. It is a schematic cross section which shows the light beam turning mechanism in BSS of the CSP type LED element shown to FIG. 2B. and It is a schematic cross section which shows embodiment of the modification of the CSP type LED element shown to FIG. 2B. It is a schematic cross section which shows the CSP type | mold LED element by another embodiment of this indication. It is a schematic cross section which shows the CSP type | mold LED element by another embodiment of this indication. It is a schematic cross section which shows the CSP type | mold LED element by another embodiment of this indication. It is a 3D model perspective view which shows the CSP type | mold LED element by another embodiment of this indication. It is a cross-sectional schematic diagram which shows the CSP type | mold LED element by another embodiment of this indication. and and and and and and and It is a schematic diagram which shows the manufacturing process which manufactures the CSP type | mold LED element by various embodiment of this indication.

Detailed description

Definitions The following definitions apply to several technical aspects described with respect to some embodiments of the present invention. These definitions may be extended in the same way herein.

  As used herein, singular terms, whether unspecified or specific, are intended to include a plurality of objects unless the context clearly indicates otherwise. Thus, for example, a description relating to one layer can include multiple layers unless explicitly indicated otherwise.

  As used herein, the term “one set” means a collection of one or more components. Thus, for example, a set of layers may include a single layer or multiple layers. A set of components may mean a plurality of members in a set. The plurality of components in a set may be the same or different. In some cases, each set of components may include one or more common characteristics.

  As used herein, the term “adjacent” means near or next to each other. Adjacent components may be separated from each other or may actually be in contact with each other, ie directly. In some examples, adjacent components may be connected to each other or may be integrally formed with each other. In the description of some embodiments, a component provided “above” or “above” another component is when the former is provided directly on the latter (eg, directly And a case in which one or more intervening elements are provided between the former element and the latter element. In the description of some embodiments, a component provided “below” another component is when the former component is provided below the latter component (eg, directly physically And the case where one or more intervening elements are provided between the former component and the latter component.

  As used herein, the terms “connect”, “connected” and “connected” refer to operational linkages or associations. The connected components may be directly coupled to each other or indirectly coupled to each other, for example via another set of components.

  As used herein, the terms “about”, “substantially” and “substantial” mean a degree or degree to be considered. When used in connection with an event or situation, the term is typical of the manufacturing operations described herein, for example, where the event or situation almost occurs, in addition to when the event or situation definitely occurs. It may include the case of proximity that occupies a certain tolerance level. For example, when used in connection with numerical values, these terms may include numerical ranges of variation within ± 10%, such as within ± 5%, within ± 4%, within ± 3%, ± Includes variation ranges within 2%, within ± 1%, within ± 0.5%, within ± 0.1%, or within ± 0.05%. For example, if any deviation between two surfaces is 50 μm or less, eg, 40 μm or less, 30 μm or less, 20 μm or less, 10 μm or less, 5 μm or less, 1 μm or less, or 0.5 μm or less, these two surfaces are substantially the same. It is considered to be height or aligned.

  The term “efficiency” or “quantum efficiency” as used herein with respect to photoluminescence refers to the ratio of the number of output photons to the number of input photons.

  The term “size” as used herein means a characteristic dimension. When the object is spherical (for example, particles), the size of the object may mean the diameter of the object. When the object is non-spherical, the size of the object may mean an average value of various orthogonal dimensions of the object. Thus, for example, the size of an ellipsoidal object may refer to the average value of the major and minor axes of the object. When referring to a set of objects having a particular size, it is assumed that the object is distributed in several sizes around that particular size. Thus, as used herein, the size of a set of objects may mean the general size of a size distribution such as, for example, an average value, an intermediate value, or a peak value. .

  FIG. 2A is a 3D schematic perspective view of a CSP type LED element 1A according to an embodiment of the present disclosure, and FIG. 2B is a schematic cross-sectional view thereof. The CSP-type LED element 1 </ b> A includes an LED semiconductor die 10, a photoluminescence structure 20, a beam shaping structure (BSS) 30, and a supernatant light transmission layer 40. The package structure 200 includes a photoluminescence structure 20, a BSS 30, and a supernatant light transmission layer 40. Detailed technical contents are described below.

  The LED semiconductor die 10 is preferably a flip-chip LED semiconductor die and has an upper surface 11, a lower surface 12, an edge surface 13 and a set of electrodes 14. The upper surface 11 and the lower surface 12 are formed substantially in parallel and face each other. The edge surface 13 is formed between the upper surface 11 and the lower surface 12 and connects the outer edge of the upper surface 11 to the outer edge of the lower surface 12.

  A set of electrodes 14 or a plurality of electrodes is disposed on the lower surface 12. When electrical energy is applied to the LED semiconductor die 10 through a set of electrodes 14, electroluminescence occurs. For this particular structure, the active region that generates electroluminescence is typically located near the lower position of the flip chip LED semiconductor die 10 (position closer to the lower surface 12). Therefore, the light generated by the active region is emitted outward through the upper surface 11 and the edge surface 13. Therefore, the flip-chip type LED semiconductor die 10 emits light from the upper surface 11 and the edge surface 13 (four peripheral side edges), that is, constitutes a five-surface-emitting LED semiconductor die.

  The main function of the photoluminescent structure 20 is to convert the wavelength of light emitted from the upper surface 11 and the edge surface 13 of the LED semiconductor die 10. Specifically, when the blue light emitted from the LED semiconductor die 10 passes through the photoluminescence structure 20, a part of the blue light has a long wavelength and energy due to the photoluminescence material contained in the photoluminescence structure 20. Can be down-converted to low light. Therefore, the light of different wavelengths emitted from the photoluminescent material and the LED semiconductor die 10 can be mixed at a predetermined ratio to generate light of a desired color, for example, white light of various color temperatures.

  Regarding the structure of the element 1 </ b> A, the photoluminescence structure 20 further includes an upper part 21, an edge part 22, and an extension part 23. The upper portion 21 covers the upper surface 11 of the LED semiconductor die 10 and is formed so as to down-convert the light emitted from the upper surface 11 to a long wavelength. The edge portion 22 covers the edge surface 13 of the LED semiconductor die 10. The light emitted from the edge surface 13 is formed to be down-converted to a long wavelength. The extension part 23 extends outward from the edge part 22. Both the edge portion 22 and the extension portion 23 are formed so as to surround the LED semiconductor die 10, and the thickness of the extension portion 23 is desirably smaller than the thickness of the LED semiconductor die 10. As shown in FIG. 2B, the upper part 21 has an upper surface 211, and the edge part 22 has an edge surface 221. The extension part 23 has an upper surface 231.

  The BSS 30 is disposed so as to surround the photoluminescence structure 20 so that the viewing angle of the CSP type LED element 1A can be reduced by the BSS 30. Conventionally, the viewing angle of an LED element is generally defined as the full width at half maximum (FWHM) of the spatial radiation pattern, which is the “width of the spatial radiation pattern when the light intensity is equal to half of its peak value (half value). (Or angle).

  Specifically, when the CSP-type LED element does not include the BSS 30, the light transmitted through the photoluminescence structure 20 generally forms a radiation pattern with a viewing angle of 140 degrees to 160 degrees. In contrast, when the CSP type LED element has the BSS 30 incorporated, the viewing angle is less than about 140 degrees, for example, between about 120 degrees and about 140 degrees.

  More specifically, the BSS 30 covers both the edge surface 221 of the edge portion 22 of the photoluminescence structure 20 and the upper surface 231 of the extension portion 23. Variations of BSS 30 can be achieved using different process conditions. For example, as shown in FIGS. 2A and 2B, the upper surface 31 of the BSS 30 is substantially the same height as or aligned with the upper surface 211 of the upper portion 21 of the photoluminescent structure 20, and the photoluminescence The upper part 21 of the sense structure 20 is not covered with the BSS 30 and is exposed.

  Regarding another modification, as shown in FIG. 3A, the BSS 30 may extend slightly on the upper surface 211 of the upper portion 21 of the photoluminescent structure 20 to cover the upper surface. As shown in FIG. 3B, the upper surface 31 of the BSS 30 is slightly lower than the upper surface 211 of the upper portion 21 of the photoluminescent structure 20 so as not to cover the upper portion 21, and the edge portion 22 is partially exposed from the BSS 30. You may make it do. In other words, the BSS 30 formed so as to surround the edge portion 22 of the photoluminescent structure 20 selectively covers the upper portion 21 or selectively and partially covers the edge surface 221 of the edge portion 22. May be.

Referring to FIGS. 2A and 2B, the BSS 30 is manufactured using the polymer resin material 301 and the light scattering particles 302 dispersed in the polymer resin material 301, and changes the traveling direction of light. The light scattering particles 302 may be selected from one of materials such as TiO ₂ , BN, SiO ₂ , Al ₂ O ₃ , other metals, non-metal oxides, or any combination thereof. The polymer resin material 301 used for bonding the light scattering particles 302 is desirably light transmissive. The polymeric resin material 301 may be selected from one of thermoset materials consisting of, for example, silicone, epoxy or rubber, or any combination thereof.

  If the light scattering particles 302 are excessively dispersed in the BSS 30 at a high concentration, it becomes difficult for light to pass through the BSS 30. Therefore, the light scattering particles 302 in the BSS 30 are in a weight percentage of about 30 wt% or less, about 25 wt% or less, about 20 wt% or less, about 15 wt% or less, or about 10 wt% or less. That is, the light scattering particles 302 included in the BSS 30 have a relatively low concentration.

  In order to facilitate manufacture, it is desirable to uniformly disperse the light scattering particles 302 in the thermosetting polymer resin material 301. However, it will be appreciated that during the manufacturing process, the light scattering particles 302 may not be uniformly dispersed in the polymer resin material 301 due to gravity effects or other factors. In another embodiment, the light scattering particles 302 may be intentionally introduced to increase the concentration at a specific position in the polymer resin material 301. For example, in the case where both the upper part 21 and the edge part 22 of the photoluminescence structure 20 are arranged so as to be covered with the polymer resin material 301, the light scattering particles 302 surround the edge part 22 of the photoluminescence structure 20. It is desirable to increase the concentration at the position and decrease the concentration at the position covering the upper part 21 of the photoluminescence structure 20. Therefore, the light emitted from the upper part 21 cannot obtain a light scattering effect as strong as that of the light emitted from the edge part 22 of the photoluminescence structure 20.

  As shown in FIGS. 2A and 2B, the supernatant light transmission layer 40 is disposed on the BSS 30 to cover the upper surface 31 of the BSS 30 and serves as an environmental protection layer and a planarization layer of the photoluminescent structure 20 and the BSS 30. . When the BSS 30 is not intended to cover the upper portion 21 of the photoluminescent structure 20, the supernatant light transmissive layer 40 is formed on the upper surface 211 of the photoluminescent structure 20 and the BSS 30 as shown in FIGS. 2B and 3B. The upper surface 31 of the photoluminescence structure 20 and the upper surface 31 of the BSS 30 can be adjacent to each other.

  FIG. 2C is a schematic cross-sectional view of the CSP type LED element 1A, and shows how the viewing angle of the CSP type LED element 1A is changed by the beam shaping mechanism.

  Since the BSS 30 formed so as to cover the edge portion 22 of the photoluminescence structure 20 has light scattering particles 302 having a relatively low concentration (for example, a concentration not exceeding about 30 wt%), it is emitted from the LED semiconductor die 10. Then, the light beam L that passes through the photoluminescence structure 20 in the substantially horizontal direction D2 passes through the BSS 30. Within the BSS 30, a portion (L 1) of the light beam L continues to travel in its original direction (eg, substantially horizontal direction D 2) and eventually leaks from the edge surface 32 of the BSS 30. Another part (L 2) of the light beam L changes in its traveling direction, is turned in the substantially vertical direction D 1 by the light scattering particles 302, and is finally emitted outward from the upper surface 31 of the BSS 30.

  In other words, after the light beam L traveling in the substantially horizontal direction D2 passes through the BSS 30, a part L1 of the light beam continues to travel outward in the substantially horizontal direction D2, and another part of the light beam L2 is Scattering is almost in the vertical direction D1. As a result, the intensity of the light beam emitted in the substantially horizontal direction D2 of the CSP type LED element 1A is reduced, and the intensity of the light beam emitted in the substantially vertical direction D1 of the CSP type LED element 1A is increased. As described above, the intensity of the light beam emitted from the CSP type LED element 1A is increased substantially in the vertical direction D1, so that the viewing angle is smaller than that of the comparative CSP type LED element not using the BSS. In addition, since the BSS 30 includes the light scattering particles 302 having a relatively low concentration, the probability that the photons disappear in the BSS 30 is reduced, and the light emission efficiency of the entire CSP type LED element 1A is improved.

  In addition, two design parameters of the BSS 30 that affect the viewing angle, such as the weight percentage of the light scattering particles 302 and the geometric dimensions of the BSS 30, are illustrated in detail in the following paragraphs.

  The first design parameter for BSS is the scattering particle concentration. The viewing angle of the CSP-type LED element 1A tends to be smaller as the BSS 30 has light scattering particles 302 with a higher concentration (quantified by wt%). As shown in the measurement results summarized in Table 1 below, when the concentration of the light scattering particles 302 is increased from about 1.5 wt% (element T1 of the embodiment) to about 2.5 wt% (element T2 of the embodiment). The viewing angle is reduced from about 128 degrees (element T1 in the embodiment) to about 126 degrees (element T2 in the embodiment), and other element parameters remain the same. As the BSS 30 has a higher concentration of the light scattering particles 302, the light beam L has a higher probability of obtaining a high light scattering effect when passing through the BSS 30. Therefore, the light beam L is more likely to be scattered and turned in different traveling directions. It will be understood that Therefore, the light intensity in the substantially horizontal direction D2 decreases, the light intensity in the substantially vertical direction D1 increases, and the viewing angle of the entire CSP type LED element 1A decreases.

In some embodiments, it is desirable that the weight percentage of the light scattering particles 302 be less than about 10% and higher than about 0.1%, so that the CSP-type LED element 1A has about 120 degrees to about 140 degrees. It is possible to obtain a light beam having a viewing angle of.

  With respect to other design elements, two parameters are defined to characterize the geometric dimensions of the BSS 30. As shown in FIG. 2C, the first characteristic dimension W is defined as a horizontal distance from the edge surface 221 of the photoluminescence structure 20 to the edge surface 32 of the BSS 30, and the second characteristic dimension T is from the lower surface 33. It is defined as the vertical distance to the upper surface 31 of the BSS 30. Next, the aspect ratio can be further defined as a value obtained by dividing the first characteristic dimension W by the second characteristic dimension T, that is, W / T. It will be understood that the viewing angle decreases as the aspect ratio W / T increases. When the measurement results of the element T1 of the embodiment summarized in Table 1 and the element T3 of the embodiment are compared, the viewing angle is reduced from about 128 degrees to about 124 degrees, and the aspect ratio W / T is about 180 μm / 150 μm to about 250 μm. The other parameters of the BSS remain the same. As the aspect ratio W / T of the BSS 30 increases, the light scattering effect in the BSS 30 increases in the light beam L traveling substantially along the horizontal direction D2. When the light beam L is scattered substantially in the vertical direction D1, the distance until the light beam L travels in the substantially vertical direction and leaks out of the BSS 30 is shortened. Therefore, there is almost no light scattering effect received by the light beam L in the substantially vertical direction D1. Therefore, while the light intensity in the substantially horizontal direction D2 decreases, the light intensity in the substantially vertical direction D1 increases, so the viewing angle of the entire CSP type LED element 1A becomes small. In some embodiments, the aspect ratio W / T can be greater than about 1, for example, about 1.1 or more, about 1.2 or more, about 1.3 or more, about 1.4 or more, or about 1 .5 or more, or even about 1.8 or more or about 2 or more.

  Further, in addition to the BSS 30, the supernatant light transmission layer 40 also plays a role of shaping the viewing angle of the CSP type LED element 1A. The CSP-type LED element 1A may optionally have a supernatant light transmission layer 40, whereby light traveling substantially in the vertical direction D1 is refracted when passing through the supernatant light transmission layer 40, and the entire field of view The corner becomes larger. According to one of the measurement results, the CSP type LED element 1A having the supernatant light transmission layer 40 shows a viewing angle of about 125 degrees, and the CSP type LED element 1A not including the supernatant light transmission layer 40 (not shown) is about A viewing angle of 120 degrees is shown.

  The supernatant light transmission layer 40 can improve the light extraction efficiency or the light emission efficiency of the CSP-type LED element 1 </ b> A in addition to shaping the viewing angle. According to one of the measurement results, the CSP type LED element 1A having the supernatant light transmission layer 40 has a luminous efficiency about 5% higher than that of the CSP type LED element 1A not including the supernatant light transmission layer 40. Furthermore, the supernatant light transmissive layer 40 may be manufactured using a polymer resin material having a lower refractive index (RI) than the photoluminescence structure 20 and the BSS 30. This ensures proper RI matching, for example, light energy due to total internal reflection occurring at the interface between various media such as photoluminescent structure 20, BSS 30, supernatant light transmissive layer 40 and ambient environment (air). Loss can be reduced. Therefore, the light extraction efficiency and the light emission efficiency of the CSP type LED element 1A can be further improved.

  Therefore, the supernatant light transmission layer 40 can be incorporated into the CSP-type LED element 1A according to a desired viewing angle and overall luminous efficiency.

  2B, 3A, and 3B, the BSS 30 may cover the photoluminescence structure 20 in various ranges to shape the viewing angle of the CSP type LED element 1A. it can.

  Each of the above paragraphs is a detailed description of an embodiment related to the CSP type LED element 1A. A detailed description of another embodiment of a CSP type LED device according to the present disclosure will be described below. It will be understood that some of the detailed descriptions of features and advantages found in the following light emitting device embodiments are similar to the description of the CSP type LED device 1A, and are therefore omitted to simplify the description.

  FIG. 4 is a schematic cross-sectional view of a CSP type LED element 1B according to another embodiment of the present disclosure. The difference between the CSP type LED element 1B and the CSP type LED element 1A is that at least the photoluminescence structure 20 of the CSP type LED element 1B does not include the extended portion 23 of the CSP type LED element 1A. Therefore, the lower surface 33 of the BSS 30 is substantially the same height as or aligned with the lower surface 222 of the edge portion 22, and is substantially the same height as the lower surface 12 of the LED semiconductor die 10. Or it may align with this. In addition, when the photoluminescence structure 20 is manufactured by performing a molding process, the thickness of the photoluminescence structure 20 of the CSP type LED element 1B is the thickness of the photoluminescence structure 20 of the CSP type LED element 1A. It can be bigger than that.

  FIG. 5 is a schematic cross-sectional view of a CSP type LED element 1C according to another embodiment of the present disclosure. The difference between the CSP-type LED element 1C and the above-described CSP-type LED elements 1A and 1B is that the CSP-type LED element 1C is further sandwiched between the photoluminescence structure 20 and the LED semiconductor die 10 and the soft buffer layer 50. It is a point including. Specifically, the soft buffer layer 50 covers the upper surface 11 and the edge surface 13 of the LED semiconductor die 10. Thereafter, the BSS 30 is formed as a planarizing layer, covering the edge portion 22 of the photoluminescent structure 20, and optionally covering the upper portion 21 of the photoluminescent structure 20.

  The soft buffer layer 50 has the following technical advantages. That is, 1) the adhesion strength between the photoluminescence structure 20 and the LED semiconductor die 10 is improved, and 2) the internal stress due to the mismatch of the thermal expansion coefficients between the components in the CSP type LED element 1C is reduced. 3) The subsequent manufacture of the photoluminescent structure 20 is facilitated, and a substantially shape-adaptive coating layer is formed. A detailed technical description of the soft buffer layer 50 is disclosed in US Patent Application No. 15 / 389,417 (also published as Taiwan Patent Application No. 104144441). The entire disclosure of this publication is incorporated herein by reference.

  FIG. 6 is a schematic cross-sectional view of a CSP type LED element 1D according to another embodiment of the present disclosure. The difference between the CSP-type LED element 1D and the CSP-type LED elements 1A, 1B, and 1C described above is that the CSP-type LED element 1D does not include the photoluminescence structure 20, and the BSS 30 directly touches the edge surface 13 of the LED semiconductor die 10. It is a point that covers and joins, and optionally covers the upper surface 11 of the LED semiconductor die 10. Since the photoluminescence structure 20 is not included, the CSP type LED element 1D can output a monochromatic light beam, for example, red, green, blue, infrared, ultraviolet, and the like. With this specific structure, the CSP-type LED element 1D can obtain a light beam having a smaller viewing angle.

  As a technical feature common to the above CSP type LED elements 1A to 1D, by disposing a BSS 30 mainly on a side portion in the element structure, a part of the light beam is turned from a substantially horizontal direction to a substantially vertical direction. The viewing angle is reduced. A CSP type LED element 1E according to another embodiment of the present disclosure has a BSS 30 ′ disposed at a distant position above both the LED semiconductor die 10 and the photoluminescent structure 20, and a part of the light beam is substantially vertical. The viewing angle is increased by turning from the direction to the horizontal direction.

  7A is a 3D schematic perspective view of the CSP-type LED element 1E, and FIG. 7B is a schematic cross-sectional view of the element 1E. Similar to the CSP-type LED element 1A, the CSP-type LED element 1E includes the LED semiconductor die 10, the photoluminescence structure 20, the beam shaping structure (BSS) 30 ', and the supernatant light transmission layer 40'. For detailed technical contents of each component of the CSP-type LED element 1E, refer to the description of the corresponding components of the CSP-type LED element 1A, but the arrangement configuration of the BSS 30 ′ and the supernatant light transmission layer 40 ′ is as follows. It will be understood that the configuration of the CSP type LED element 1A is different.

  Specifically, the supernatant light transmission layer 40 ′ is formed as a planarization layer laminated on the photoluminescence structure 20 and covers the upper portion 21, the edge portion 22, and the extension portion 23 of the photoluminescence structure 20. ing. As shown in FIG. 7B, the supernatant light transmission layer 40 ′ functions as a planarization layer and a spacer layer sandwiched between the BSS 30 ′ and the photoluminescence structure 20. The thickness of the BSS 30 'is desirably substantially uniform and substantially completely or selectively covers a portion of the upper surface 41 of the supernatant light transmissive layer 40'.

  The BSS 30 'includes a relatively low concentration of light scattering particles 302, the concentration of which does not exceed about 30 wt%, does not exceed about 25 wt%, does not exceed about 20 wt%, does not exceed about 15 wt%, or about It does not exceed 10 wt%, desirably from about 0.1 wt% to about 10 wt%. According to this particular embodiment, a portion of the light beam L emitted directly by the LED semiconductor die 10 or down-converted by the photoluminescent structure 20 and traveling in the substantially vertical direction D1 can enter the BSS 30 '. When entering the BSS 30 ', the traveling direction of a part of the light beam L does not change so much due to the light scattering effect, as shown as the light beam L1 in FIG. 7B. Another part of the light beam L shown as light beam L2 in FIG. 7B is scattered substantially in the horizontal direction D2, and finally exits outward from the edge surface of the BSS 30 '.

  As a result, the intensity of the light beam traveling in the substantially horizontal direction D2 of the CSP type LED element 1E increases, and the intensity of the light beam traveling in the substantially vertical direction D1 of the CSP type LED element 1E decreases. Therefore, the light beam L emitted from the CSP-type LED element 1E exhibits a larger viewing angle than a comparative CSP-type LED element that does not include the BSS 30 '. For example, the viewing angle can be greater than about 160 degrees and can be expanded, for example, to a range from about 160 degrees to greater than about 180 degrees. According to an example of the measurement result, the viewing angle of the CSP type LED element 1E in which the BSS 30 ′ is formed on the supernatant light transmitting layer 40 ′ is about 170 degrees, and the comparative CSP type LED element (not shown) does not include the BSS 30 ′. The viewing angle is 140 degrees. Accordingly, the BSS 30 'serves the purpose of satisfying a specific application condition for specifying a larger viewing angle by enlarging the viewing angle of the CSP type LED element 1E.

  Next, the manufacturing method which manufactures some embodiment of the CSP type | mold LED element by this indication is demonstrated. The manufacturing method for manufacturing the CSP type LED elements 1A to 1E is similar although the order is different. It will be understood that the detailed description of the embodiment of the variation of the manufacturing method is similar in part and is omitted to simplify the description.

  8A-8F illustrate a manufacturing method for manufacturing a CSP type LED device according to some embodiments of the present disclosure. The manufacturing method includes the following three main manufacturing stages. That is, 1) a plurality of LED semiconductor dies 10 are arranged to form an array on the release layer 900, and 2) a package sheet layer including a plurality of package structures 200 is formed on the array of LED semiconductor dies 10. 3) A package sheet layer is separately separated to form a plurality of CSP type LED elements. The technique of this manufacturing method will be described in further detail below.

  In the first main manufacturing stage, an array of LED semiconductor dies is formed. As shown in FIG. 8A, first, the release layer 900 may be manufactured, and the release layer 900 may be disposed on a carrier substrate (not shown) such as a silicon substrate, a glass substrate, or a metal substrate. Next, a plurality of LED semiconductor dies 10 are disposed on the release layer 900 to form an array 10 of LED semiconductor dies with a substantially constant pitch length. Examples of the release layer 900 include an ultraviolet (UV) light peeling tape and a thermal peeling tape. It is desirable that each set of electrodes 14 of the array of LED semiconductor dies 10 be placed and pressed strongly to be embedded in the soft release layer 900. This would protect the set of electrodes 14 from contamination in subsequent manufacturing steps.

  In the second main manufacturing stage, a package sheet layer is formed. Next, as shown in FIGS. 8B to 8D, a package sheet layer including a plurality of package structures 200 is formed to cover the array of LED semiconductor dies 10. The manufacturing process for forming the package sheet layer on the LED semiconductor die 10 will be described in detail below.

  As shown in FIG. 8B, a plurality of photoluminescent structures 20 are formed on the array of LED semiconductor dies 10, and an edge portion 22 of each photoluminescent structure 20 covers the edge surface 13 of the LED semiconductor die 10, The upper portion 21 of the photoluminescence structure 20 covers the upper surface 11 of the LED semiconductor die 10. In addition, the photoluminescence structure 20 may include an extended portion 23 that extends outward from the edge portion 22 and covers the surface of the release layer 900. Desirably, the photoluminescent structure 20 is formed by the method disclosed in U.S. Patent Application Publication No. US2010 / 0119839, and one or more layers of a photoluminescent material and a polymer resin material are sequentially laminated to form a photo It is also possible to form the luminescent structure 20. Thus, the photoluminescence structure 20 formed by this method can take a multilayer structure. The entire technical content of the US Patent Application Publication is incorporated herein by reference.

  Next, as shown in FIG. 8C, a planarization layer including a beam shaping structure (BSS) 30 is formed to cover the edge portion 22 and the upper portion 21 of the photoluminescence structure 20. Alternatively, the embodiment of the CSP type LED element 1A shown in FIGS. 2A and 2B may be formed by setting the BSS 30 so as not to cover the upper portion 21 of the photoluminescence structure 20 during the manufacturing process of the BSS 30. . Optionally, the BSS 30 is manufactured such that the upper surface thereof is lower than the upper surface 211 of the upper portion 21, and the edge surface 221 of the photoluminescent structure 20 is partially exposed, so that the CSP type LED element 1A shown in FIG. Other embodiments may be formed.

  Regarding the manufacturing method for manufacturing the BSS 30, it is desirable that the composition material for manufacturing the BSS 30 is formed by dispersing the light scattering particles 302 in the polymer resin material 301. For example, the viscosity may be reduced by further diluting the composition material with an organic solvent such as octane, xylene, acetate, ether or toluene. The diluted relatively low viscosity composition material may be coated on the photoluminescent structure 20 using a manufacturing method such as spray coating. Due to the low viscosity, as shown in FIG. 8C, the composition material flows to form a planarization layer on the photoluminescent structure 20 having an upper surface substantially the same height. The composition material of BSS30 may be formed by other manufacturing methods such as a dispensing method, a printing method, a molding method, and the like. Finally, the BSS 30 is solidified using heat or UV curing.

  The BSS 30 is not directly adjacent to the LED semiconductor die 10, but the outside of the LED semiconductor die 10 is still covered at a position separated by the BSS 30 with the photoluminescent structure 20 interposed therebetween, or Protected. In other words, the BSS 30 is disposed along the optical path of the LED semiconductor die 10. Therefore, not only the light beam emitted from the photoluminescence structure 20 but also the light beam emitted from the LED semiconductor die 10 is formed by the BSS 30.

  Next, as shown in FIG. 8D, a supernatant light transmission layer 40 is formed to cover the photoluminescence structure 20 and / or the BSS 30. The supernatant light-transmitting layer 40 is preferably formed using a substantially transparent polymer resin material, and can be formed by a suitable manufacturing method such as spray coating, spin coating, molding, dispensing, and the like. Or it can be coated on BSS30. Thereafter, the polymer resin material is solidified using heat or UV curing.

  By using the manufacturing process, a package sheet layer including a plurality of package structures 200 for manufacturing the embodiment of the CSP type LED element 1A is formed, and the package structures 200 are connected even after the manufacturing process is completed. Will remain. Several variations of manufacturing methods for forming various package structures 200 corresponding to other embodiments of CSP type LED devices according to the present disclosure will be described below.

  When it is not desirable to provide the supernatant light transmission layer 40 in the package structure 200, the manufacturing process for forming the supernatant light transmission layer 40 shown in FIG. 8D may be omitted. Thereby, the CSP type | mold LED element which does not contain the supernatant light transmissive layer 40 can be obtained.

  When the package structure 200 corresponding to the embodiment of the CSP type LED element 1B shown in FIG. 4 is specified, the manufacturing process for forming the photoluminescence structure 20 shown in FIG. 8B is an alternative such as a molding method or a printing method. It can be realized using a typical manufacturing method. As a result, the photoluminescence structure 20 that does not include the extension portion 23 can be manufactured. Therefore, the BSS 30 is formed so as to cover the release layer 900 in the next manufacturing process as shown in FIG. 8C.

  When designating the package structure 200 corresponding to the embodiment of the CSP type LED element 1C shown in FIG. 5, as shown in FIG. 8A, first, after the manufacturing process of arranging the LED semiconductor die 10 is completed, first, the soft buffer layer It is desirable to form 50 by spray coating. Thereafter, after the manufacturing process shown in FIG. 8B, the photoluminescence structure 20 is formed to cover the soft buffer layer 50.

  When designating the package structure 200 corresponding to the embodiment of the monochromatic CSP-type LED element 1D shown in FIG. 6, the manufacturing process for forming the photoluminescence structure 20 shown in FIG. 8B may be omitted. In the subsequent manufacturing process shown in FIG. 8C, the BSS 30 can be formed so as to directly cover the edge surface 13 of the LED semiconductor die 10 and, optionally, further so as to cover the upper surface 11 of the LED semiconductor die 10. be able to.

  As shown in FIG. 7B, when designating the package structure 200 corresponding to the embodiment of the CSP-type LED element 1E having a larger viewing angle, the manufacturing process shown in FIG. 8B (formation of the photoluminescence structure layer 20) The manufacturing process shown in FIG. 9A (formation of supernatant light-transmitting layer 40 ′) and the manufacturing process shown in FIG. 9B (formation of remote BSS layer 30 ′) can be performed sequentially.

  In the third main manufacturing stage, the package sheet layers are individually separated. After the desired package structure 200 is formed as a sheet layer in the second main manufacturing stage, the release layer 900 may be removed as shown in FIG. 8E. Next, the package sheet layer including the plurality of package structures 200 is individually separated as shown in FIG. 8F. Thereby, several CSP type LED elements 1A-1E are obtained. It will be understood that the release layer 900 can be removed after performing the individual separation step.

  In view of the above, a viewing angle of a CSP type LED element is disclosed by disclosing some variations of embodiments of a manufacturing method for manufacturing various CSP type LED elements incorporating the beam shaping structures of various embodiments. Can be molded appropriately to meet various application specifications. Further, each disclosed method can be sufficiently applied to a batch type mass production process.

Although the present disclosure has been described with reference to specific embodiments, various modifications can be made and equivalents can be substituted without departing from the true spirit and scope of the disclosure as defined in the appended claims. Certainly, those skilled in the art will appreciate. In addition, various modifications may be made to apply a particular situation, material, composition of matter, method, or process to the purpose, spirit, and scope of the present disclosure. All such modifications are intended to be included within the scope of the appended claims. In particular, although the methods disclosed herein are described with respect to specific operations performed in a specific order, these operations may be combined, further divided, or reordered to Equivalent methods can be constructed without departing from the teachings of the disclosure. Therefore, unless otherwise specified herein, the order and grouping of each operation does not limit the present disclosure.

Claims (19)

A flip chip including an upper surface, a lower surface opposite to the upper surface, an edge surface, and a set of electrodes, the edge surface extending between the upper surface and the lower surface, and the set of electrodes disposed on the lower surface Type light emitting diode (LED) semiconductor die;
A photoluminescence structure including an upper portion disposed on the upper surface of the LED semiconductor die and an edge portion covering the edge surface of the LED semiconductor die;
A beam shaping structure disposed around an edge surface of the edge portion of the photoluminescence structure, the beam shaping structure comprising a polymer resin material and light dispersed in the polymer resin material The weight percentage of the light-scattering particles in the beam-forming structure is not more than 10% and not less than 0.1%,
The beam shaping structure redirects a part of the light beam emitted from the edge portion of the photoluminescence structure to the upper surface of the beam shaping structure, thereby setting a viewing angle of the light emitting element from about 120 degrees to about 120 degrees. A light-emitting element that is reduced to a range of 140 degrees . The light scattering particles may include at least one of TiO ₂ , BN, SiO _{2, and} Al ₂ O ₃ , and the polymer resin material may include at least one of silicone, epoxy, or rubber. Item 2. A light emitting device according to Item 1. The light emitting device according to claim 1 or 2, wherein the beam forming structure is further characterized in that for covering the upper position of the upper surface of the photoluminescence structure. The upper surface of the beam shaping structure is substantially the same height as the upper surface of the upper portion of the photoluminescence structure, or the upper surface of the beam shaping structure is the photoluminescence structure. the light emitting device according to claim 1 or 2, wherein the lower than the upper surface of the upper position of the body. The photoluminescence structure further includes an extension portion extending outward from the edge portion of the photoluminescence structure, and the beam shaping structure further includes an upper surface of the extension portion of the photoluminescence structure. the light emitting device according to claim 1 or 2, characterized in that cover. 3. The light emitting device according to claim 1, wherein a lower surface of the beam shaping structure has substantially the same height as a lower surface of the edge portion of the photoluminescence structure. The light emitting device further includes a light transmission layer disposed on the beam shaping structure, or disposed on both the photoluminescence structure and the beam shaping structure. the light emitting device according to claim 1 or 2. The light emitting device further includes a soft buffer layer covering the upper surface and the edge surface of the LED semiconductor die, and the photoluminescence structure is disposed on the soft buffer layer. 3. The light emitting device according to 1 or 2 . The lower surface of the edge portion of the lower surface or the photoluminescence structure of the beam forming structure is claimed in claim 1 or 2, characterized in that said lower surface substantially the same height of the LED semiconductor die Light emitting element. A flip chip including an upper surface, a lower surface opposite to the upper surface, an edge surface, and a set of electrodes, the edge surface extending between the upper surface and the lower surface, and the set of electrodes disposed on the lower surface Type light emitting diode (LED) semiconductor die;
A beam shaping structure disposed around the edge surface of the LED semiconductor die, the beam shaping structure comprising a polymer resin material and light scattering particles dispersed in the polymer resin material; The weight percentage of the light scattering particles in the beam-shaping structure does not exceed 10% and does not fall below 0.1%,
The beam shaping structure redirects a part of the light beam emitted from the edge surface of the LED semiconductor die to the upper surface of the beam shaping structure, thereby setting a viewing angle of the light emitting element from about 120 degrees to about 140 degrees. A light-emitting element characterized by being reduced to the range described above . The light emitting device according to claim 10 , wherein the beam shaping structure directly covers the edge surface of the LED semiconductor die. It said beam lower surface of the forming structure, the light emitting device according to claim 10 or 11, characterized in that said lower surface substantially the same height of the LED semiconductor die. A plurality of LED semiconductor dies are disposed on the release layer to form an array of LED semiconductor dies;
In a method for manufacturing a light emitting device, comprising forming a package sheet layer including a plurality of package structures on the array of LED semiconductor dies,
Forming the package sheet layer on the array of LED semiconductor dies includes forming a plurality of beam-shaping structures each covering at least a corresponding edge surface of the array of LED semiconductor dies, the beam-shaping structure Comprising a polymer resin material and light scattering particles dispersed in the polymer resin material in a weight percentage not exceeding 10% and not less than 0.1% in the polymer resin material, Reduces the viewing angle of the light emitting element to a range of about 120 degrees to about 140 degrees by turning a part of the light beam emitted from the edge surface of the LED semiconductor die to the upper surface of the beam shaping structure. The manufacturing method further includes
Separating the package sheet layers individually;
Removing the release layer, wherein the release layer is removed before or after the individual separation of the package sheet layer. The light scattering particles may include at least one of TiO ₂ , BN, SiO _{2, and} Al ₂ O ₃ , and the polymer resin material may include at least one of silicone, epoxy, or rubber. Item 14. A method for manufacturing a light-emitting element according to Item 13 . Forming the plurality of beam-shaping structures further comprises:
Dispersing the light scattering particles in the polymer resin material to form a composition material;
15. The method of manufacturing a light emitting device according to claim 13 or 14 , comprising covering each edge surface of the array of LED semiconductor dies with a composition material. A plurality of LED semiconductor dies are disposed on the release layer to form an array of LED semiconductor dies;
In a method for manufacturing a light emitting device, comprising forming a package sheet layer including a plurality of package structures on the array of LED semiconductor dies,
Formation of the package sheet layer on the array of LED semiconductor dies includes forming a plurality of photoluminescent structures on the array of LED semiconductor dies, wherein each of the photoluminescent structures Are disposed on a corresponding upper surface of the array of LED semiconductor dies, each of the photoluminescent structures covering an edge surface of the corresponding array of the LED semiconductor dies,
Forming the package sheet layer on the array of LED semiconductor dies further includes forming a plurality of beam shaping structures each covering an edge surface of a corresponding edge portion of the photoluminescent structure. The beam-shaping structure comprises a polymer resin material and light scattering particles dispersed in the polymer resin material in a weight percentage not exceeding 10% and not less than 0.1% in the polymer resin material. The beam shaping structure redirects a part of the light beam emitted from the edge portion of the photoluminescence structure to the upper surface of the beam shaping structure, so that the viewing angle of the light emitting element is about 120 degrees to Reduced to a range of about 140 degrees , and the manufacturing method further comprises:
Separating the package sheet layers individually;
Removing the release layer, wherein the release layer is removed before or after the individual separation of the package sheet layer. The formation of the plurality of beam-shaping structures further includes
Dispersing the light scattering particles in the polymer resin material to form a composition material,
The method for manufacturing a light-emitting element according to claim 16 , comprising covering each of the edge portions of the photoluminescence structure with the composition material. The formation of the package sheet layer further includes forming a plurality of light transmission layers on the plurality of beam shaping structures, or a plurality of supernatant lights on the plurality of photoluminescence structures and the plurality of beam shaping structures. The method for manufacturing a light emitting device according to claim 16 , further comprising forming a transmission layer. The formation of the package sheet layer further includes
Forming a plurality of soft buffer layers on the array of LED semiconductor dies;
The method for manufacturing a light-emitting element according to claim 16 , comprising forming the plurality of photoluminescence structures on the plurality of soft buffer layers.