JP6659094B2 - Light emitting device - Google Patents

Description

  The present invention relates to a light emitting device and a method of manufacturing the same, and more particularly, to a light emitting device using an organic electroluminescence element and a method of manufacturing the same.

  Laser scan printers based on electrophotographic technology have become widespread. A general laser beam printer scans light emitted from a laser light source with a scanning unit to expose a photoconductor, but it is difficult to reduce the size of the laser scanning unit due to its structure.

  On the other hand, a laser beam printer of a type in which light-emitting elements are arranged in a row, the light emission thereof is controlled, and the photosensitive body is exposed using the light-emitting elements as light sources is being studied. This method is useful for reducing the size of the printer device because the light source unit can be made smaller. In particular, an organic electroluminescence element (hereinafter, referred to as an “organic EL element”) is a high-definition, low-power-consumption light-emitting element, and is suitable as a light-emitting element for a light source unit of a printer device.

  Organic EL elements are known to be excellent light emitting elements, but their properties are degraded by moisture. Therefore, in order to maintain the light emitting performance of the organic EL element, it is important how to suppress the movement of moisture to the light emitting element.

  Patent Literature 1 discloses a phenomenon in which moisture penetrating from a pinhole generated in an electrode diffuses into a partition layer made of a resin material for dividing a light emitting region of an organic EL element, thereby deteriorating the light emitting characteristics of the organic EL element. The technology which suppresses is disclosed. Specifically, Patent Literature 1 proposes that the movement of moisture is suppressed by providing a groove between a support in which a pinhole is generated and a partition layer. Patent Document 1 discloses a hollow sealing technique using a sealing substrate as a sealing mode of an organic EL element.

JP 2009-21164 A

  However, the study of the present inventors has revealed that a small amount of moisture is present in the partition layer made of a resin material, and this moisture may migrate to the organic EL element and cause deterioration of the element. . In addition, when the sealing mode of the film sealing is performed, the direct movement of moisture from the external atmosphere to the partition wall through the sealing defect cannot be ignored, and the moisture moves in the resin material to deteriorate the element. May cause.

  An object of the present invention is to provide a light emitting device capable of effectively suppressing deterioration of characteristics of an organic EL element due to moisture and a method for manufacturing the same.

According to one aspect of the present invention, a plurality of pixels each having a light-emitting element having a lower electrode, an organic compound layer, and an upper electrode in this order, provided on a substrate, and Disposed between the lower electrode and the organic compound layer, having an opening that defines a light-emitting region of the light-emitting element, a partition layer made of an inorganic material, provided on the partition layer, from the organic compound layer, is spaced in the plane direction of the substrate, possess upper surface a resin layer made of a resin material having a flattened, and a sealing layer made of an inorganic material covering said light emitting element and the resin layer, wherein A light emitting device is provided in which the organic compound layer is continuously arranged over a region where the plurality of pixels are arranged .

  ADVANTAGE OF THE INVENTION According to this invention, it can suppress that a water | moisture content reaches the organic compound layer which comprises an organic EL element. Thereby, the characteristic deterioration of the organic EL element due to moisture can be effectively suppressed, the reliability of the light emitting device can be improved, and the life can be extended.

FIG. 2 is a top view (part 1) illustrating the structure of the light emitting device according to the first embodiment of the present invention. FIG. 3 is a top view (part 2) illustrating the structure of the light emitting device according to the first embodiment of the present invention. FIG. 2 is a schematic sectional view illustrating a structure of the light emitting device according to the first embodiment of the present invention. FIG. 6 is a process cross-sectional view (part 1) illustrating the method for manufacturing the light emitting device according to the first embodiment of the present invention. FIG. 6 is a process sectional view (part 2) illustrating the method for manufacturing the light emitting device according to the first embodiment of the present invention. FIG. 6 is a schematic sectional view illustrating a structure of a light emitting device according to a second embodiment of the present invention. FIG. 9 is a configuration diagram illustrating an image forming apparatus according to a third embodiment of the present invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Well-known or known techniques in the art can be applied to parts not specifically shown or described in this specification.

[First Embodiment]
The light emitting device and the method for fabricating the light emitting device according to the first embodiment of the present invention will be described with reference to FIGS.

  1 and 2 are plan views showing the structure of the light emitting device according to the present embodiment. FIG. 3 is a schematic sectional view illustrating the structure of the light emitting device according to the present embodiment. 4 and 5 are process sectional views illustrating the method for manufacturing the light emitting device according to the present embodiment.

  First, the structure of the light emitting device according to the present embodiment will be explained with reference to FIGS.

  As shown in FIG. 1, the light emitting device 100 according to the present embodiment includes a plurality of pixels 12, a plurality of pixel circuits 14, a power supply line 16, a scanning circuit 18, a data line 20, and the like, which are arranged on a substrate 10. ing.

  The pixel 12 is formed of an organic EL element. The plurality of pixels 12 are arranged on the elongated substrate 10 in a row along the longitudinal direction of the substrate 10. Although FIG. 1 shows an example in which the pixels 12 are arranged in one column for simplification, two or more columns of the pixels 12 may be arranged. Further, the plurality of pixels 12 may be arranged in a zigzag pattern in a staggered arrangement along the column direction. FIG. 1 shows an example in which 16 pixels 12 are arranged in the column direction for simplification, but the number of pixels 12 arranged in the column direction is not limited to this. The number of pixels 12 arranged in the column direction can be appropriately determined according to the width and resolution of an image to be exposed.

  The pixel circuits 14 are arranged on the substrate 10 in parallel and adjacent to the columns of the pixels 12. The pixel circuits 14 are for controlling the drive current of the pixels 12, and are arranged one for each pixel 12. The pixel circuit 14 is disposed adjacent to the pixel 12 in the lateral direction of the substrate 10.

  The power supply line 16 and the scanning circuit 18 are arranged on the substrate 10 next to the column of the pixel circuits. The data line 20 is arranged next to the pixel 12 in the lateral direction of the substrate 10. The pixel circuit 14, the power supply line 16, the scanning circuit 18, and the data line 20 form a driving circuit for driving the plurality of pixels 12. The pixel circuit 14 and the scanning circuit 18 are formed by a switching element such as a thin film transistor, or a metal wiring such as aluminum or molybdenum. The power supply line 16 and the data line 20 are also formed by the same metal wiring.

  In a light emitting device in which a plurality of pixels 12 are arranged in a row as in the light emitting device 100 according to the present embodiment, it is difficult to arrange driving circuits for driving the pixels 12 on four sides around the pixel region. As shown in FIG. 1, the pixels 12 are arranged on two sides on both sides of the column of the pixels 12. It can be said that the pixel circuits 14, the pixels 12, and the data lines 20 are arranged in this order in the lateral direction of the substrate 10. FIG. 1 shows an example of the arrangement of the pixel circuit 14, the power supply line 16, the scanning circuit 18, and the data line 20. Which side of the column of the pixels 12 the pixel circuit 14, the power supply line 16, the scanning circuit 18, and the data line 20 are arranged, and in which order, can be determined individually.

  In such a light emitting device 100, light emission of each pixel 12 is controlled by a control signal appropriately input from a drive circuit corresponding to each pixel 12. By exposing the photoreceptor with this light, a device such as an electrophotographic printer can be constructed.

  FIG. 3 is a schematic cross-sectional view of the light emitting device 100 of FIG. 1 along the line AA ′.

An undercoat layer 30 made of an inorganic insulating material such as silicon oxide (SiO _x ) or silicon nitride (SiN _x ) is formed on a substrate 10 made of a glass substrate or the like. On the undercoat layer 30, a thin film transistor 38 including a channel layer 32, a gate insulating film 34, and a gate electrode 36 is formed. The thin film transistor 38 is a switching element included in a driving circuit such as the pixel circuit 14 and the scanning circuit 18.

  On the undercoat layer 30 on which the thin film transistors 38 are formed, an interlayer insulating film 40 made of an inorganic insulating material such as silicon oxide or silicon nitride is formed. On the interlayer insulating film 40, source / drain electrodes 42 electrically connected to the channel layer 32 and the gate electrode 36 of the thin film transistor 38 through connection holes formed in the interlayer insulating film 40, the power supply line 16, A metal wiring 44 constituting the line 20 is formed.

  An interlayer insulating film 46 made of an inorganic insulating material such as silicon oxide or silicon nitride is formed on the interlayer insulating film 40 on which the source / drain electrodes 42, the metal wires 44, and the like are formed. On the interlayer insulating film 46, a lower electrode 48 is formed which is electrically connected to the source / drain electrode 42 of the thin film transistor 38 via a connection hole formed in the interlayer insulating film 46.

  On the interlayer insulating film 46 on which the lower electrode 48 is formed, a partition layer 50 made of an inorganic insulating material such as silicon oxide or silicon nitride is formed. The partition layer 50 is for defining a light emitting area of the organic EL element 60 which is a light emitting element, and an opening 52 is provided in a predetermined light emitting area on the lower electrode 48. On the partition layer 50, an organic compound layer 54 including a light emitting layer is formed so as to be in contact with the lower electrode 48 in the opening 52 and extend from the opening 52 onto the partition layer 50. As shown in FIG. 2, the organic compound layer 54 is continuously arranged over a region where the plurality of pixels 12 are arranged.

  On the partition layer (on the partition layer 50), a flattening layer 56 made of a resin material, for example, polyacryl or polyimide is formed. As shown in FIG. 2, the planarization layer 56 is selectively formed above a control circuit including the pixel circuit 14, the power supply line 16, the scanning circuit 18, and the data line 20. In other words, the flattening layer 56 is arranged so as not to extend over the pixel 12, more specifically, over the organic compound layer 54. An interval P is provided between the organic compound layer 54 and the flattening layer 56, as shown in FIGS. The interval P is preferably at least 10 μm.

  An upper electrode 58 is formed on the organic compound layer 54 so as to extend on the partition layer 50 and the flattening layer 56. Thus, an organic EL element 60 having the lower electrode 48, the organic compound layer 54, and the upper electrode 58 is configured. The lower electrode 48, the organic compound layer 54, and the upper electrode 58 are sequentially laminated in this order from the substrate side (substrate 10 side). 1 and 2, the pixel 12 corresponds to a light emitting region of the organic EL element 60, that is, a portion of the opening 52 provided in the partition layer 50.

  On the planarization layer 56 on which the upper electrode 58 is formed, a sealing layer 62 made of an inorganic insulating material, for example, silicon nitride or silicon oxide is formed. By sealing the entire substrate 10 with the sealing layer 62 made of an inorganic material, elements such as the organic EL element 60 formed on the substrate 10 can be shielded from the external atmosphere. As the sealing layer 62, an inorganic material such as silicon nitride is preferable. In this specification, a method of performing sealing by the sealing layer 62 deposited on the surface of the substrate 10 may be referred to as “film sealing”.

  One feature of the light emitting device 100 according to the present embodiment is that the partition layer 50 is made of an inorganic material as described above. The partition layer 50 is for defining a light emitting region of the organic EL element 60 and is formed directly in contact with the organic compound layer 54. When the partition layer 50 is formed of an organic material, for example, a photosensitive resin such as polyacryl or polyimide is used. However, due to its material characteristics, moisture is present, and it is difficult to completely eliminate the moisture. . Therefore, when the partition layer 50 is formed of an organic material, the organic compound layer 54 may be deteriorated by moisture contained in the partition layer 50, and the light emitting characteristics of the organic EL element 60 may be impaired in some cases. Was found by Therefore, in the light emitting device 100 according to the present embodiment, the partition layer 50 is formed of an inorganic insulating material such as silicon nitride or silicon oxide, and deterioration of the light emitting characteristics of the organic EL element 60 due to moisture from the partition layer 50 is suppressed. I have.

  On the other hand, a switching element such as a thin film transistor, a metal wiring, and the like are arranged in a formation region of a driving circuit forming the pixel circuit 14, the power supply line 16, the scanning circuit 18, and the data line 20, so that a large area is formed on their surface. Irregularities are formed. If the sealing layer 62 is formed on a base having such large irregularities, defects may occur in the sealing layer 62 from the irregularities, and the sealing performance of the sealing layer 62 may be reduced. Such unevenness of the base can be reduced by forming the partition layer 50 thick.

  However, when the partition layer 50 made of an inorganic material is formed to be as thick as the case where an organic material is used, the taper angle of the opening 52 becomes larger than in the case where an organic material is used, and the partition layer 50 is formed of a thin film laminate. It becomes difficult to form the organic EL element 60 in the opening 52. Therefore, it is difficult to form the partition layer 50 made of an inorganic material as thick as a partition layer made of an organic material. From such a viewpoint, in the light emitting device 100 according to the present embodiment, the planarization layer 56 made of a resin material is disposed on the partition layer 50.

  One of the functions of the flattening layer 56 is to cover irregularities caused by wirings such as the source / drain electrodes 42 and the metal wirings 44 on the substrate 10 and switching elements and the like to reduce surface irregularities. This is particularly effective when performing film sealing using an inorganic material as a sealing mode. When the film sealing is performed in a state where the unevenness on the surface of the substrate 10 remains on the surface, the sealing layer 62 cannot cover the unevenness, and there is a possibility that a defect occurs in the sealing layer 62 and moisture enters from an external atmosphere. Because there is.

  Another function of the planarization layer 56 is to reduce a parasitic capacitance generated between the upper electrode 58 and the source / drain electrode 42, the metal wiring 44, and the like. If the distance between the upper electrode 58 and the source / drain electrode 42 and the metal wiring 44 is small, the parasitic capacitance between them becomes large, and an obstacle such as a delay of an input signal occurs. The flattening layer 56 preferably has a thickness of 0.5 μm or more. Since the resin can be easily formed with a thickness of about 0.5 μm to several μm, the parasitic capacitance can be easily reduced without complicating the manufacturing process.

  For the planarization layer 56, a photosensitive resin such as polyacryl or polyimide can be suitably used. However, as described above, these organic materials have moisture therein due to their material properties, and it is difficult to completely eliminate the moisture. Further, at the time of film sealing, if a foreign substance is present on the surface of the substrate, a sealing defect may occur. In particular, when a foreign substance or the like is present on the surface of the planarization layer 56 and a sealing defect occurs, moisture that has entered from the external atmosphere through the defect may move and diffuse in the planarization layer 56.

  In this regard, in the light emitting device 100 according to the present embodiment, as shown in FIGS. 2 and 3, an interval P is provided between the planarization layer 56 and the organic compound layer 54, and the organic compound layer 54 is The structure is separated from The partition layer 50 made of an inorganic material, the upper electrode 58, and the sealing layer 62 made of an inorganic material exist between the planarizing layer 56 and the organic compound layer 54. Therefore, even when moisture is present in the planarization layer 56, or when moisture enters or diffuses into the planarization layer 56 via a sealing defect, the moisture does not propagate to the organic compound layer 54. It is difficult, and the deterioration of the organic EL element 60 due to moisture can be significantly suppressed.

  The distance P between the planarizing layer 56 and the organic compound layer 54 depends on the materials of the partition layer 50, the upper electrode 58, the sealing layer 62, and the like, and is therefore always determined uniquely. It is not possible. It is desirable that the minimum value of the interval P is appropriately set according to each device structure.

  The length of the long side of the light emitting device 100 according to the present embodiment is determined by the width of the image to be exposed. For example, in the case of A4 letter size, the length is about 200 mm. On the other hand, the shorter side is preferably shorter, so that the number of light emitting devices that can be produced at one time can be increased. For example, the shorter side is assumed to be several mm or less. Specifically, the length of the long substrate in the short direction is 10 mm or less. More specifically, it is 1 mm or more and 10 mm or less. Therefore, the distance from the edge of the substrate 10 to the planarization layer 56 is naturally shortened, and is easily affected by moisture.

  However, the light emitting device 100 according to the present embodiment has a structure in which the planarizing layer 56 and the organic compound layer 54 are separated from each other. Therefore, even in such a long light emitting device, the organic EL element 60 is effectively prevented from deteriorating. Can be suppressed.

  Next, the method for fabricating the light emitting device according to the present embodiment will be explained with reference to FIGS.

  First, an undercoat layer 30 made of an inorganic insulating material such as silicon oxide or silicon nitride is formed on a substrate 10 such as a glass substrate by, for example, a CVD method.

  Next, a thin film transistor 38 having a channel layer 32, a gate insulating film 34, and a gate electrode 36 is formed on the undercoat layer 30 in a manner similar to a known method of manufacturing a thin film transistor.

  Next, an interlayer insulating film 40 made of an inorganic insulating material such as silicon oxide or silicon nitride is formed on the undercoat layer 30 on which the thin film transistors 38 are formed, for example, by a CVD method.

  Next, a connection hole opened on the electrode of the thin film transistor 38 is formed in the interlayer insulating film 40 by photolithography and dry etching, and the source / drain electrode 42 and the metal wiring connected to the thin film transistor 38 via the connection hole are formed. 44 and the like are formed.

  Next, on the interlayer insulating film 40 on which the source / drain electrodes 42 and the metal wirings 44 are formed, an interlayer insulating film 46 made of an inorganic insulating material such as silicon oxide or silicon nitride is formed by, for example, a CVD method.

  Next, a connection hole opened on the source / drain electrode 42 is formed in the interlayer insulating film 46 by photolithography and dry etching, and the lower electrode 48 connected to the source / drain electrode 42 via the connection hole is formed. It is formed (FIG. 4A).

  Next, a partition layer 50 made of an inorganic insulating material such as silicon oxide or silicon nitride is formed on the interlayer insulating film 46 on which the lower electrode 48 is formed, for example, by a CVD method.

  Next, the partition layer 50 is patterned by photolithography and dry etching, and an opening 52 for defining a light emitting region is formed in the partition layer 50 (FIG. 4B).

  Next, a photosensitive resin material such as polyacryl or polyimide is formed on the partition layer 50 by, for example, spin coating, and then the photosensitive resin material is patterned by photolithography to form a planarization layer 56 (FIG. 5 (a)). By setting the thickness of the flattening layer 56 to about 0.5 μm to several μm, unevenness due to the underlying thin film transistor 38, the source / drain electrode 42, and the metal wiring 44 can be reduced.

  Next, an organic compound layer 54 is formed on the lower electrode 48 exposed in the opening 52 of the partition layer 50 by, for example, a vacuum deposition method. When the organic compound layer 54 is formed, by using a shadow mask, the organic compound layer 54 can be selectively formed in a desired region separated from the planarization layer 56. As the organic compound layer 54, a hole transport layer, an electron transport layer, and the like are appropriately formed in addition to a light emitting layer containing a light emitting material. When vacuum evaporation is performed using a shadow mask, a support may be provided on a substrate, and the support may be in contact with the mask. Further, the organic compound layer 54 can be formed by a film forming method of applying and drying a polymer material.

  Next, a conductive film is deposited and patterned on the partition layer 50 on which the organic compound layer 54 and the planarizing layer 56 are formed, and an upper electrode 58 made of the conductive film is formed.

  Thus, an organic EL element 60 including the lower electrode 48, the organic compound layer 54, and the upper electrode 58 is formed (FIG. 5B).

  The light emitting device 100 according to this embodiment may be a bottom emission type in which light is transmitted through the substrate 10 or a top emission type in which light is extracted without transmitting the substrate 10. When the organic EL element 60 is of a bottom emission type, the lower electrode 48 is formed of a transparent electrode material such as ITO, and the upper electrode 58 is formed of a reflective electrode material such as aluminum. When the organic EL element 60 is of a top emission type, the lower electrode 48 is formed of a reflective electrode material, and the upper electrode 58 is formed of a transparent electrode material.

  Next, a sealing layer 62 made of silicon nitride, silicon oxide, aluminum oxide, or the like is formed on the entire surface by, for example, a plasma CVD method, a sputtering method, an ALD method, or the like. In the case where the sealing layer organic EL element is a bottom emission type, the sealing layer 62 does not need to have a light transmitting property. However, in the case of a top emission type, light from the organic EL element 60 is extracted to the sealing layer 62 side. In addition, the sealing layer 62 needs to have a light transmitting property.

  The sealing layer 62 is formed up to the end of the substrate 10, and the organic EL element 60 suppresses the invasion of an external atmosphere containing moisture by the sealing layer 62. When foreign matter or the like is present on the substrate 10 when the sealing layer 62 is formed, if the foreign matter has insufficient coverage, a sealing defect may occur. However, according to the light emitting device of the present embodiment, even if a sealing defect occurs on the planarization layer 56, the movement of moisture to the organic EL element through the defect can be sufficiently suppressed, so that high reliability is ensured. be able to.

  As described above, according to the present embodiment, the partition layer is formed of the inorganic material, and the flattening layer made of the resin material is disposed separately from the organic compound layer. Can be suppressed. Thereby, the characteristic deterioration of the organic EL element due to moisture can be effectively suppressed, the reliability of the light emitting device can be improved, and the life can be extended.

[Second embodiment]
The light emitting device according to the second embodiment of the present invention and the method for fabricating the same will be described with reference to FIG. FIG. 6 is a schematic sectional view illustrating the structure of the light emitting device according to the present embodiment. The same components as those of the light emitting device according to the first embodiment shown in FIGS. 1 to 5 are denoted by the same reference numerals, and description thereof will be omitted or simplified.

  The light emitting device 100 according to the present embodiment is a light emitting device having a hollow sealing structure as shown in FIG. That is, the space on the substrate 10 where the organic EL elements 60 and the like are formed is sealed by the sealing substrate 64 stuck on the substrate 10. The configuration of the control circuit and the organic EL element 60 formed on the substrate 10 is the same as that of the light emitting device according to the first embodiment.

  Note that the sealed space may have a gel or the like. When having a gel, the gel preferably has a hygroscopic property or an endothermic property.

  In the light emitting device 100 according to the present embodiment, after the upper electrode 58 is formed in the step shown in FIG. 5B, the sealing substrate 64 having the concave portion formed thereon is bonded to the substrate 10 in a dry nitrogen atmosphere. Can be formed. The bonding between the substrate 10 and the sealing substrate 64 includes a method using frit glass or the like, a method using a sealant, or the like.

  By disposing the moisture absorbent 66 inside the sealing substrate 64 as shown in FIG. 6, the moisture inside the hollow sealing can be reduced. FIG. 6 shows a case where the bottom emission type organic EL element 60 is used. In this case, since the light from the organic EL element 60 is extracted to the substrate 10 side, the sealing substrate 64 is not necessarily transparent. It doesn't have to be sex. Therefore, as the sealing substrate 64, not only a glass material or the like but also a metal material or the like can be used.

  On the other hand, when the top emission type organic EL element 60 is used, a light transmitting material such as glass is used for the sealing substrate 64 in order to extract light from the organic EL element 60 to the sealing substrate 64 side. When the hygroscopic agent 66 is used, a translucent hygroscopic material is used or the hygroscopic agent 66 is provided at a position where light is not blocked.

  In the light emitting device 100 according to the present embodiment, similarly to the light emitting device 100 according to the first embodiment, the organic compound layer 54 is formed such that the end of the formation region is separated from the end of the planarization layer 56. Therefore, according to the light emitting device 100 of the present embodiment, it is possible to sufficiently suppress the influence of the water contained in the flattening layer 56 made of the resin material, and to secure high reliability.

  As described above, according to the present embodiment, the partition layer is formed of the inorganic material, and the flattening layer made of the resin material is disposed separately from the organic compound layer. Can be suppressed. Thereby, the characteristic deterioration of the organic EL element due to moisture can be effectively suppressed, the reliability of the light emitting device can be improved, and the life can be extended.

[Third embodiment]
An image forming apparatus according to a third embodiment of the present invention will be described with reference to FIG. FIG. 7 is a schematic diagram illustrating the configuration of the image forming apparatus according to the present embodiment.

  In the present embodiment, an image forming apparatus using the light emitting devices according to the first and second embodiments as an exposure head will be described.

  First, the configuration of the image forming apparatus according to the present embodiment will be described with reference to FIG.

  As shown in FIG. 7, the image forming apparatus 200 according to the present embodiment includes a recording unit 104 including a photosensitive drum 105, a charger 106, an exposure head 107, a developing unit 108, and a transfer unit 109, a transport roller 103, and a fixing unit. 110. As the exposure head 107, the light emitting device 100 according to the first or second embodiment is used. The exposure head 107 (the light emitting device 100) is arranged so that the plurality of organic EL elements 60 are along the long axis direction of the photosensitive drum 105.

  Next, the operation of the image forming apparatus according to the present embodiment will be described.

  In the recording unit 104, first, the surface of the cylindrical photosensitive drum 105 serving as a photosensitive member is uniformly charged by a charger 106 serving as a charging unit.

  Next, the exposure head 107, which is an exposure unit, emits light according to the data to expose the photosensitive drum 105, and forms an electrostatic latent image on the photosensitive drum 105 according to the exposed data. The electrostatic latent image can be controlled by the exposure amount (illuminance, time) of the exposure head 107.

  Next, in the recording unit 104, in a developing unit 108 as a developing unit, toner as a developer is applied to the photosensitive drum 105, the toner is attached to the electrostatic latent image, and the toner is attached to the electrostatic latent image by the transfer unit 109. The toner is transferred to the paper 102.

  In this way, the paper 102 to which the image data has been transferred via the recording unit 104 has the toner fixed by the fixing device 110 and is discharged. Note that the timing at which the paper 102 is transported to the recording unit 104 by the transport roller 103 can be set as appropriate.

  In the present embodiment, an example in which the recording unit 104 has a single monochrome image forming apparatus has been described. However, the present invention is not limited to this, and a color image forming apparatus including a plurality of recording units 104 may be used.

  As described above, according to the present embodiment, since the image forming apparatus is configured using the light emitting devices according to the first and second embodiments, the reliability of the image forming apparatus can be improved.

[Modified embodiment]
The present invention is not limited to the above embodiment, and various modifications are possible.

  For example, in the first embodiment, the driving circuits are arranged on both sides of the column of the pixels 12, but the driving circuits may be arranged only on one side of the column of the pixels 12. However, in the light emitting device having an elongated external shape as shown in the first embodiment, the organic EL element 60 is arranged as far as possible from the end of the substrate 10 from the viewpoint of suppressing the deterioration of the organic EL element 60 due to moisture. It is desirable to do. From this viewpoint, the configuration described in the embodiment in which the columns of the pixels 12 are arranged near the center of the substrate 10 and the drive circuits are arranged on both sides thereof is more preferable.

  In the first embodiment, the driving circuit including the pixel circuit 14 and the scanning circuit 18 is disposed on the substrate 10. However, only the signal lines such as the power supply line 16 and the data line 20 are disposed on the substrate 10. It may be. In this case, a driver circuit including a switching element such as the pixel circuit 14 and the scanning circuit 18 can be provided on a substrate different from the substrate 10.

  In the first and second embodiments, the planarization layer 56 is disposed on the partition layer 50. However, the planarization layer 56 does not necessarily need to be formed directly on the partition layer 50. In such a configuration, the planarization layer 56 and the organic compound layer 54 can be separated by a layer disposed between the partition layer 50 and the planarization layer 56. However, from the viewpoint of effectively suppressing the intrusion of moisture into the organic EL element 60, as in the first and second embodiments, the planarization layer 56 and the organic compound layer 54 do not overlap in plan view. It is more preferable to arrange them.

  Although the sealing layer 62 is not formed on the organic EL element 60 in the second embodiment, the sealing layer 62 may be formed in the light emitting device according to the second embodiment. In this case, the sealing layer 62 and the sealing substrate 64 are separated from each other.

  The image forming apparatus according to the third embodiment is an example of an apparatus to which the light emitting devices according to the first and second embodiments can be applied. Applicable devices are not limited to this. The light emitting devices according to the first and second embodiments can be applied to various devices using a light source in which light emitting elements are arranged in rows.

  The embodiments described above are merely examples of some aspects to which the present invention can be applied, and do not prevent appropriate modifications and variations without departing from the spirit of the present invention.

Reference Signs List 10 substrate 12 pixel 14 pixel circuit 16 power supply line 18 scanning circuit 20 data line 38 thin film transistor 44 metal wiring 48 lower electrode 50 partition layer 52 opening 54 organic compound layer 56 planarization layer 58 upper electrode 60 organic EL element 62 sealing layer 100 Light emitting device 200 Image forming device

Claims (11)

Provided on a substrate, from the substrate side, a plurality of pixels each having a light emitting element having a lower electrode, an organic compound layer and an upper electrode in this order,
A partition layer made of an inorganic material, which is disposed between the lower electrode and the organic compound layer of the light emitting element, has an opening that defines a light emitting region of the light emitting element,
A resin layer formed of a resin material, which is provided on the partition layer, is separated from the organic compound layer in an in-plane direction of the substrate, and has a flattened upper surface;
Have a, a sealing layer made of an inorganic material covering said light emitting element and the resin layer,
The light emitting device according to claim 1, wherein the organic compound layer is continuously arranged over a region where the plurality of pixels are arranged . A pixel circuit for driving the plurality of pixels is arranged on the substrate,
The light emitting device according to claim 1, wherein the resin layer is disposed above the pixel circuit, and planarizes unevenness formed by the pixel circuit. The light emitting device according to claim 2, wherein the pixel circuit is arranged adjacent to the pixel in a lateral direction of the substrate. Wiring connected to each of the light emitting elements of the plurality of pixels is arranged on the substrate,
The light emitting device according to claim 2, wherein the resin layer is disposed above the wiring, and planarizes unevenness formed by the wiring. The light emitting device according to claim 4, wherein the wiring is disposed adjacent to the pixel in a lateral direction of the substrate. The light emitting device according to claim 5, wherein the pixel circuit, the pixel, and the wiring are arranged in this order in a lateral direction of the substrate. The light emitting device according to claim 1, further comprising a sealing substrate disposed on the substrate and sealing a space in which the light emitting element is formed. The light emitting device according to claim 7, wherein the sealing layer and the sealing substrate are separated from each other. The light emitting device according to claim 7, further comprising a moisture absorbent in the sealed space. The light emitting device according to any one of claims 1 to 9, wherein the resin layer does not overlap with the organic compound layer in a plan view from a main surface direction of the substrate. A photoconductor, an exposure unit that exposes the photoconductor, a charging unit that charges the photoconductor, and a developing unit that applies a developer to the photoconductor, an image forming apparatus,
The exposure unit has the light emitting device according to any one of claims 1 to 10,
The image forming apparatus, wherein the light emitting elements of the plurality of pixels are arranged along a major axis direction of the photoconductor.

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