JP6664809B2 - Spiral capacitor-inductor device - Google Patents

Description

  The present invention relates to device designs where the magnetic flux generated by the flow of current is proportional to the charge stored on the device.

  Looking ahead to three circuit elements, a resistor (R), a capacitor (C), and an inductor (L), many attempts have recently been made to create a fourth circuit element. The charge, voltage, current, and magnetic flux change in pairs, defining a resistance (R), a capacitor (C), and an inductor (L). In these definitions, charge, voltage, current, and magnetic flux occur twice, excluding charge and magnetic flux. In 1971, Leon O Chua proposed a fourth circuit element by correlating charge and magnetic flux, ie a new device H realizes this [Non-Patent Document 1]. The inventor of the present patent application (hereinafter, simply referred to as “the inventor”) has reported that some companies immediately have a “memristor” as the fourth circuit element H [Patent Document 1, Non-Patent Document 2] ], But I felt that there was an error in the overall method. We challenged this concept in our earlier patent (US Pat. No. 6,037,059) and created a completely unique device. According to the inventor's claim, the magnetic flux induces a voltage in the remote device, and an equivalent voltage is created in the remote device, and the current flows there, not the source of the magnetic field. The rate of change of the magnetic flux changes the bias in a device far away, not inside the source, and thus converts the induced magnetic flux into a bias, and then into a current flowing through the source. The approach seems to be mathematically correct, but conceptually flawed. The further claim that the source does not need to generate magnetic flux has further deficiencies. Further, to correct this error, they later introduced a mem-inductor, stating that there should be three basic fourth circuit elements.

  This is wrong for many reasons. First, all properties of all memristors are generated using a combination of L, C, and R [1]. Can the inventor use C and R to generate any property of L, or use L and R to generate any property of C? It is not possible for the inventors, so they do not call them basic. Thus, the memristor defined by Chua in 1971 cannot be a fundamental element. In other words, a fourth circuit element that exhibits a linear relationship between the stored charge and the magnetic flux generated in the device has not yet been invented. In this regard, Chua's 1971 paper, which first proposed the fourth circuit element, is also incorrect. The reason is that in that paper he has been able to use the combination of L, C and R to generate any of the electronic properties of his proposed fourth device. Thus, the inventor can allow L, C, and R to do the work of a memristor without his need, as his own assertion.

  Of interest to the present inventor is not a memo-capacitor or a memristor, but a memo inductor because it can generate magnetic flux. Chua admits that his 1971 proposal was not complete [4], but no mathematical formulation has been proposed for memo inductors [5]. This concept does not tell us how the memo inductor is not considered to be explained by L, C, R. What are the unique parameters of a memo inductor where the memo inductor is some basic element similar to L, C, or R? If these questions are not addressed, the memo inductor is a fictitious, undefined claim of a device that acquires the properties of a true fourth circuit element. The present inventor has adopted in US Pat. No. 6,037,064 a claim that differs significantly from the proposal by Chua for the fourth circuit element, and the current-voltage characteristics and other responses in this patent application have been described by all groups worldwide in the name of memristors. Is fundamentally different from any paper or patent filed so far. Now, in the present patent application, the inventor has gone much further into the fourth circuit element of the present patent application, and how the fourth circuit element of the present patent application extends the unique scope of electronics and technology. It can be created. Neither of these is close to a memo inductor, so the present invention is still very original.

  When studying the fourth circuit element of the present patent application, the inventor concluded that the assertion of the present patent application was based on the Chua memristor or memo inductor type of the fourth circuit element and only one area of commonality. Have found that they are so different that they do not exist. Chua's fourth circuit element, the memristor (MR), memo capacitor (MC), and memo inductor (ML), always has memory, but memory should not be a prerequisite for the fourth circuit element. . One "bit" of memory can be associated with two structural symmetries of the material, and for memory storage a phase transition between the two symmetries is required, one of which stores one And the other stores 0. To control the helical flux or magnetic flux with the stored charge, the inventor has devised a comprehensive mathematical formulation in which any memory state has a linear change in magnetic flux as a function of charge storage. Found that it is not necessary. The memory properties are additional properties that may be included in every fourth circuit element, but all fourth circuit elements can be defined even without memory. Chua's MR, MC, and ML are the basic R, L, and C with additional memory properties.

  There is one very important issue that the inventor wishes to consider in the introduction here. The principle of operation of the fourth circuit element of the present patent application is just the opposite of a parallel LC coupling circuit. In the fourth circuit element of the invention, the electronic and magnetic energies increase and decrease together, ie the total energy does not remain constant. In contrast, in an LC coupled resonant circuit, when L is charged and its magnetic energy increases, C discharges and the electrical energy stored in C decreases, and vice versa. Thus, while the resonance of the LC coupling circuit is determined by the rate of charge and discharge of L and C, in the present invention the magnetic and electric fields together increase and saturate. In the spiral capacitor-inductor device of the present invention, the resonance is not due to charging and discharging, but rather depends on the shape of the capacitor wiring. Differentiating the equation for H with respect to current growth / decay has not made it possible to create a simple differential equation. In addition, the equations that yield the solution for current growth include a hyperspace function, which suggests that just a fractal virtual space is needed to explain the carrier operation of this system. Thus, H requires a separate identification, just as in L, C, and R where none of the elementary elements can produce another elementary element. In addition, C must be a parallel combination with L since the bias across the capacitor must be the same as the bias across L. On the other hand, C must be in series with L because the current charging the capacitor will increase the inductance as a result. That is, the connections are both series and parallel at the same time. This is why we observe virtual space in the equations that control carrier growth and decay. From this basic discussion, the inventors also believe that it is not possible to design an equivalent circuit of H using R, C, and L. Thus, H is a fundamental element, unlike MR, MC, and ML, which can be generated using R, L, and C.

  It is an object of the present invention to design a realistic device that can show a one-to-one correspondence between the charge stored in the device and the magnetic flux generated. Here, the inventor has incorporated some advanced features as a natural development of the fourth circuit element recently invented by the inventor of the present patent application.

According to one aspect of the invention, a helical array comprising helically arrayed unit capacitors that exhibits a linear increase in output magnetic field as a function of stored charge only between upper and lower frequency limits. A capacitor-inductor device is provided.
Spiral capacitor-inductor devices can exhibit a quantized linear increase in magnetic field as a function of stored charge;
A. The quantization is modulated by a geometric parameter, the ratio of the diameter and pitch of the spiral loop of the spiral capacitor-inductor device,
B. The band gap split between the valence band and the conduction band of the device is adjusted by changing the lattice parameter (shape) of the capacitor arrangement, and the geometric parameters are adjusted in a spiral array of unit capacitors. Helix pitch, unit capacitor diameter, and helix radius.
Capacitors as a component of the array can determine the lower frequency limit of operation and can also determine the upper limit of the operating frequency spiral along with the capacitor as a component governing the fundamental parameters of the inductor The shape of the path can be adjusted by changing the structure of the dielectric material used in the construction of the capacitor, and the chemical or non-chemical coupling between the capacitors can be changed to adjust the transmission through the inductive path. Adjustment of the three lower and upper frequency limits can be performed in a helical array of capacitors making up the inductor, and there can be multiple bandpass filtering, cascaded bandpass filtering, or a wide frequency operating region.
The molecular structure of the capacitive material, as well as the chemical or non-chemical bonding between the unit capacitors to adjust the helical path along the unit capacitor as a component,
A. Temperature range in which the device pumps thermal power through mechanical vibrations of the structure using various modes of vibration, thereby coupling between capacitors and upper and lower temperature limits set by mechanical vibrational energy Maintaining the at least one noise-free electronic and electromagnetic energy transmission channel in the device such that the device behaves as an automated noise eliminator in said temperature range;
B. A helical capacitor-inductor device undergoes multiple dipole phase transitions at a particular temperature and exhibits ferroelectric switching;
C. Physical or elastic stresses create carriers in the helical arrangement of capacitors, thus modulating carrier propagation, exhibiting pyroelectricity and piezoelectricity,
Can be selected as
The molecular structures of the capacitive materials and their helical bonds can be selected such that the helical lattice parameters are changed by the application of external electricity, magnetism, and electromagnetism, where A.I. Because of the elastic oscillations, the resonance oscillates to produce a continuous fraction series of harmonic frequencies; Due to the mechanical stresses and strains in the helical structure, the helical ring distributes the spontaneously stored charge at the two ends of the helical capacitor-inductor device, which is redistributed along its length. The thus generated charge density gradients along the length of the device create multiple electromagnetic resonance bands, and the standing waves formed by the charge gradients due to different mechanical stress-strain changes take different shapes, Harmonic and inharmonic frequencies of
C. Due to the helical structure, the charge density distribution along the length of the device creates a standing wave curvature whose diameter is longer than the length of the device, and the interaction of mechanical oscillations in the standing wave causes the mechanical Create a natural vibration,
D. An electromechanical device in which a dielectric material and a helical shape operate over a wide frequency range by causing the device to absorb a frequency corresponding to the band gap separated from the input signal and emit a signal according to the relaxed mechanical symmetry. It has a specific composition of structural symmetry that allows it to act as an effective antenna and receiver.
Two or more distinctly different unit capacitors can be used at different intervals to encode two or more symmetries in a single helical shape;
A. Depending on the period defined by the helical gap of the capacitor arrangement on the chain making up the helix, a new distinct type of lattice symmetry is created in the structure, and multiple lattice parameters are generated by multiple standing waves and thus multiple standing waves Means the formation of multiple bands of resonance peaks,
B. Depending on the period, the gap between the resonance frequencies changes, modulating the coupling between the different resonance peaks, and this action is used for non-linear energy canalization through a spiral path made of capacitors. ,
C. Using multiple capacitor molecules, the resonance peak can be stored in a helical structure so that it can act as a memory switching device in the form of a reversible write, read, erase. The groups combine with each other to create distinct periodic and aperiodic vibration modes in the helical structure.

  The inventor has devised an electronic inductor made with a capacitor device that exhibits unprecedented electronic properties. First, it operates only under ac signals within a certain frequency range, and second, its electrical and magnetic energy, unlike capacitors and inductors, increases together over time. . Third, a virtual term such as a fractal is needed to account for its carrier propagation and generation, which differs from inductors and capacitors, which essentially controls the quantized charge transport. Fourth, it can exhibit ferroelectric, pyroelectric, piezoelectric, anisotropic, electromagnetic resonance, and electromechanical vibrations. The invention extends to antennas and receivers.

  First, the present invention is a spiral capacitor-inductor device composed of arrayed unit capacitors, wherein a quantized electric field between a stored electric charge and a generated magnetic field in a specific frequency region. A spiral capacitor-inductor device is provided that exhibits a linear relationship and whose quantization can be adjusted by simply changing the geometric parameters of the spiral assembly.

  As used herein, the electronic or photonic device is characterized in that the charge and discharge of a capacitor reduces or increases the resistance of the path through which current flows, resulting in more or less current flowing through the loop path. Since the magnetic flux generated in the device is modulated, it is called a "spiral capacitor-inductor device" or simply "capacitor inductor".

  All of these favorable changes are summarized below.

1. The present invention is an improvement over the inventor's previous fourth circuit element in that it allows control of the fourth circuit element using the upper and lower boundary frequencies.

2. The present invention allows for topological control of the electromagnetic response of an electronic device. The ratio of the pitch of the helix to the radius of the helix, p, and the dielectric constant control the quantization characteristics of the device. This is an easy-to-use adjustable parameter.

3. The present invention advances in a spiral assembly of capacitors as a bandpass filter that is extremely useful for providing a fixed amount of power to an external load under extreme noise.

4. The present invention is an advance over the inventor's previous type of fourth circuit element because the nature of the virtual term controlling the carrier in this device can be specified. In our previous derivation of the differential equation for constructing an inductor made of capacitors, we found that a virtual term (hyperspace function) works, which is Stop generation. Now, the present inventors have elucidated that with respect to the spiral path of the inductor, the dielectric space of the capacitor behaves as a "virtual source" of carriers, giving us a virtual term. Discover strong similarities in. This allows us to treat the virtual carrier source in this electronic device at will and invent a new class of fractal electronics.

5. The present invention discloses that tools for manipulating fractal bands are now available, and by simply manipulating the quantized control of magnetic flux, fractional charge electronics under the domain of a fourth circuit element of this kind. Since the development of the fourth circuit element of the present inventor has been started since the development of the fourth circuit element has been started, the present invention has been advanced.

6. The present invention allows the inventor to now use this device as a single platform to support a path for controlling a complex electromagnetic power transmission network and its temporal dynamics. In comparison with the fourth type of circuit element.

7. Since the present invention can spontaneously introduce ferroelectricity, pyroelectricity, piezoelectricity, anisotropy, electromagnetic resonance, and electromechanical vibration, the present inventor's fourth type of circuit element It is more advanced than that. Thus, the invention extends to antennas and receivers.

FIG. 2 is a diagram showing a schematic diagram of a spiral capacitor-inductor of the present invention. This is a two-terminal device, in which the charging of unit capacitors arranged in a loop changes the conductivity of the arrayed paths. FIG. 2 shows a schematic diagram of the charging of several capacitors as a function of time. The plot illustrates the events shown in FIG. FIG. 9 is a schematic diagram of a spiral shape defining band splitting of a fourth circuit element. Where c is the pitch width, R is the radius of a particular helix, and the ratio c / R is a parameter that defines the fourth circuit element. a. FIG. 8 shows a plot of energy E versus wave vector k for an exemplary fourth circuit element, where the band splits under certain conditions due to helix symmetry (described above). The storage of random charges at point contacts is shown. b. FIG. 4 shows a 3D plot of an equipotential surface suggesting three split bands. For three 3D plots, plots for the carrier transmitted signal are also shown. c. 5 is a scanning tunneling microscope (STM) image of the surface of a microtubule suggesting a change in the arrangement of a tubulin capacitor and its conformation. Among the different resonant structures, the inventors have observed the switching of the ordered arrangement of tubulin or protein. FIG. 14 is a diagram illustrating the prevention of signal transmission in a fourth circuit element. a. It is a graph which shows two probe dc resistance (10-300 M (ohm)) and ac resistance (40 k (ohm)) in the area | region (-1 pA) of 10K-300K. The jump is made so that the AC resistance at 1 MHz (〜100 mV _rms ) maintains 40 kΩ. b. FIG. 9 is a diagram schematically plotting the statistical count (N) of occurrence of a particular MT resistance from 10K to 300K by k, with peaks attributable to either phonons / electrons (ep). 3D Ek (dispersion) maps the point-contact-slip created by ep sharing (right). (A). It is a figure which shows the lattice constant of the initial hexagonal crystal of a microtubule. Those (top) show that at T _c ３397 K, c = 8 nm (J ₁ ５5.76 e-21, θ ₁ ０0 °) and b = 7 nm (J ₂ ２．０2.02 e-21, θ ₂ 〜). 45.58 °), a = 5.88 nm (J ₃ −1.23e-21, θ ₃ ５８58.25 °), d = 5 nm, and e = 8 nm. Approximately for a rectangular grating _(middle), in _{T c ~319K, c = 8nm (} J 1 ~5.76e-21, θ 1 ~0 °), b = 6.39nm (J 2 ~0.922e-21 _{, θ 2 ~51.5 °), a} = 6nm (J 3 ~-0.569e-21, θ 3 ~56.4 °), f = 0.5nm, which is g = 0.849nm. The grid of the _{bottom, c = 8nm (J 1 ~5.76e} -21, θ 1 ~0 °), b = 6.2nm (J 2 ~0.302e-21, θ 2 ~53.8 ° _{), a = 6.13nm (J 3} ~0.0262e-21, θ 3 ~54.73 °), h = 0.325nm, a k = 0.232nm. (B) A graph showing the hysteresis region calculated from a perfectly square hysteretic current-voltage characteristic is plotted as a function of V _max . The inset shows the hysteresis region (ΔI × ΔV) as a function of temperature at ambient conditions, where the heating is done vertically from below and the conductance oscillations due to IR radiation are averaged. (C) Scanning tunneling microscope (STM) image of the lattice showing how the lattice switches between hexagonal and tetragonal due to inversion around the Curie temperature, which is a ferroelectric Is direct evidence of It is a figure showing comparison with the usual antenna of the 4th circuit element. A typical antenna is large in size, and the processing wavelength λ1 is about the length of the active material. The left panel shows a schematic comparison between a macroscopic (large) piezoelectric oscillator and a nanoscale piezoelectric oscillator, showing how the wavelength of the piezoelectric is several orders of magnitude longer than the device length at the nanoscale. It is shown whether it is produced in. On the right, an STM image of the resonance band and the corresponding wavelength it processes are shown. a. It is a graph which shows the resonance band of the microtubule whose output transmission power (unit is dB) shows the electromagnetic resonance peak. b. 5 is a TEM image of a vibrating microtubule. c. FIG. 4 is a graph showing the phase difference between the input and output ac signals for all resonance frequencies, with the plot showing statistical counts at different phase values (device length varied between 200 nm and 2 μm). Between 10 kHz and 50 MHz, a statistical count is made for the occurrence of a particular phase, indicating that only a phase difference as a multiple of 45 ° is observed, regardless of the applied ac frequency. a. FIG. 11 is a diagram illustrating an antenna receiver formed on a fourth circuit element. b. FIG. 4 is an AFM image of a device based on two microtubules showing how wireless communication is performed between two fourth circuit elements under test at the nanoscale. M and N are two barrier electrodes, and MT1 and MT2 are two microtubule devices involved in wireless energy exchange. c. 10 is a graph showing the operation performance of the antenna receiver system of panel b. Here, four panels are presented from top to bottom. The ac frequency at one octave of frequency (listed to the right) is pumped, and then the output at the pumped device or another remote device is measured. MT1 pumps the MT2 output means using the two electrodes shown in panel b, and MT1 is pumped at all ac frequencies in the octave enumeration, and then measures how much power is transmitted in the MT2 device Is done.

  The present invention is described in detail below.

<Description of the spiral capacitor of the first invention>
As described above, the first aspect of the present invention is a spiral capacitor comprising an arrayed unit capacitors, wherein an output magnetic field M linearly increases as a function of stored charge Q between upper and lower frequencies. It is an inductor device. A proportionality constant H exists as M = QH, where H is referred to as the H inductance and its unit is ohm (Ohm), but the value is independent of the dc resistance of the device; It is proposed to be Hind.

  The dc resistance of this device is always in the insulator range. The resistance R across one capacitor (with leakage) is about 400 Mohm, and when only two capacitors are connected in series, the resistance exceeds several gigaohms. However, the experimentally determined H values of various devices produced in accordance with the present invention are in the micro and milliohm ranges commonly observed in superconductors. Thus, H and R for the fourth circuit element are two fundamentally different concepts. When a user sends current, all capacitors are initially charged as if the source were grounded. In order to modulate magnetic flux with charge, a spiral path is considered to carry current only when the path is activated by triggering the storage of charge using the ac signal. The conductance of the path connecting the charged capacitors must jump several orders of magnitude higher when the capacitors are pumped at a higher frequency than the threshold frequency of the series capacitor and the combined inductor. The inductor has a characteristic of blocking ac exceeding a threshold frequency. Thus, between the lower and upper frequency limits, the device acts as a bandpass filter for the ac signal, inside these limits the ac signal pumps the carrier, which generates a magnetic field. Here, if the ac signal changes polarization, the user cannot trigger charging in one direction, and thus the user cannot generate a finite magnetic flux. Therefore, the user needs an ac signal on the dc background. Obviously, unlike conventional L and C, where the ac or dc signal alone is sufficient to generate the basic characteristics, the user has to use the ac frequency and dc bias to release charge and create a magnetic field. Requires two simultaneous additional control parameters. The L and C characteristics of the fourth circuit element H determine the upper and lower frequency limits of operation. When the ac signal is at the upper limit, it is absorbed by the dielectric molecules of the capacitor and the current output is zero; when at the lower limit, the carriers are released from the capacitor and the current output is at a maximum. Due to the existence of various such operating frequency bands, each band develops a unique phase relationship between the input and output ac signals.

<Explanation of the spiral capacitor of the second invention>
A second invention is a helical capacitor-inductor device comprising the arrayed unit capacitors of the first invention exhibiting a quantized linear increase in magnetic field.
A. The quantization is modulated by the geometric parameters of the spiral loop, ie the ratio of the diameter and the pitch of the spiral loop of the spiral capacitor-inductor device.
B. The fragmented bandgap of the device is adjusted by changing the helix and / or lattice shape of the material.

  The growth / decay of the helical conductive path due to charge storage depends on the geometric parameter P. The ratio of the pitch of the helix to the radius of the helix is P, and P and the permittivity ε of the helix path control the basic features of the φ-q relationship. By adjusting P and ε, the signal amplification and energy storage characteristics of H can be modulated. Due to the periodicity of the helix and the quantized charge, the device precisely regulates the transmission of electromagnetic energy. By changing the pitch of the helix, the characteristics of the quantization can be changed. At the same time, the magnetic flux increases, exhibiting a staircase characteristic in its length change.

  Recently, the synthesis of helical nanotubes and rosette structures has received widespread attention, with one ripple effect being the generation of a widespread theory of helical electronics. In a cylindrical conductor, a 2D electron gas injected from one end distributes in a spiral symmetric pattern on the surface due to polarization. The electron density peaks are periodic along the length. In helical nanotubes, the bandgap closes at a point called the Fermi contact point when the conductivity is low or semiconducting. However, the gap closes at more point contacts when the conductivity changes to metal, allowing the system to exhibit coherent transport in certain conditions. As current flows through the helical nanotube, the Fermi contact acts as a gate channel and allows for quantized transport of charge. This is a situation similar to the generation of a split band. H is essentially an insulator, and the geometric path is thought to determine its important carrier transmission, so the power use of this device has been simulated, and it has been demonstrated that atto-femto-watts (picoamps, Microvolts). Also, the helical current produces magnetic flux only at certain frequencies, which shifts the entire band of energy levels equal to the number of quantized magnetic fluxes.

  Enables storage of energy by H in k-space.

<Explanation of the spiral capacitor of the third invention>
A third invention is a helical capacitor-inductor device comprising the arrayed unit capacitors of the first or second invention, wherein the capacitor determines the lower limit of the operating frequency and the induction determines the upper limit. The conductive pathway is regulated by changing the structure of the capacitive material as well as the chemical and non-chemical bonds between the capacitors to regulate the inductive pathway. There can be multiple bandpass filtering, cascaded bandpass filtering, or wide frequency operating regions.

  Capacitors are simply dielectrics, and the coupling between the capacitors also behaves as an electric dipole. By simply changing the composition of the material when the two parameters (i) the threshold frequency of the capacitor and (ii) the threshold frequency of the inductor are adjusted by modifying the architecture, the capacitance and inductance values of the material Is changed. These values can be adjusted to change the threshold frequency. The capacitance determines the lower limit of the bandpass frequency, and the inductance determines the upper limit.

<Description of the spiral capacitor of the fourth invention>
A fourth invention is a helical capacitor-inductor device comprising the arrayed unit capacitors of the first or second invention, wherein the molecular structure of the capacitive material and the helical coupling thereof are as follows. Is selected. A. The device pumps thermal power through mechanical vibrations to keep electronic and / or optical properties within specified temperature limits. Thus, the device functions as an automatic noise eliminator in this region. B. It undergoes multiple dipole phase transitions at specific temperatures and exhibits ferroelectric switching. C. Physical or elastic stress creates carriers in the wiring and modulates carrier propagation. The fourth circuit element H exhibits ferroelectricity, pyroelectricity, and piezoelectricity.

  When the embedded spring of the helical architecture expands and contracts, the structural symmetry is broken, the Dirac points split, and the bands at point contacts separate. However, when symmetry is restored, degeneracy appears and the two phonon bands touch at distant points. In this way, the point contact of the Dirac gate opens and closes continuously, and the permanent interaction of the soliton part between the two limits is how the purely mechanical (phonon) transport of energy is Find out if it protects a pure electronic signal, even if the noise is larger than the processed signal. In the learning phase, the solitons are locally synchronized and the microtubules accept the input signal / noise and correct for errors by adjusting the soliton portion.

  The perfectly square or lossless hysteretic current-voltage (IV) characteristic of a single helix structure is the ideal ferroelectric memory switching as shown in US Pat. Draw. The inventor has demonstrated that in nanowires, when the dipoles of the components made of protein switch in a regular manner, the conductivity switches as observed in the current-voltage characteristics ( http://www.nature.com/articles/srep07303, live video as online material supporting the inventor's recent papers). As the helix's ferroelectricity leads to its piezoelectric and pyroelectric characteristics, it oscillates like a spring between two critical lengths.

<Explanation of the spiral capacitor of the fifth invention>
A fifth invention is a helical capacitor-inductor device constituted by the arrayed unit capacitors of the first or second invention, wherein the molecular structure of the capacitive material and the helical coupling thereof have a helical shape. The lattice parameters are selected to change with the application of external electrical, magnetic, and electromagnetic fields.
A. Numerous resonance states are created due to elastic vibration.
B. Anisotropy is created and multiple electromagnetic resonance bands are created.
C. Electromechanical vibrations are created in the material.
D. Just like antennas and receivers, materials absorb specific frequency signals and emit specific frequency signals.

  Using an isotropic continuum model that makes the spiral created by the mechanical oscillations of the inductor-capacitor, but does not take into account the possibility that the lattice features change due to asymmetry in the longitudinal and transverse oscillations First calculated. In this way, it has been tested and confirmed that these devices obey strongly anisotropic elastic properties, with the longitudinal bond along the protofilament being stronger than the lateral bond between adjacent protofilaments. Proven to be. Simply calculating the longitudinal mode revealed that the oscillations were thought to be reduced by a factor of 1000 from the calculated value based on the dipole. Later, studies based on strict orthotropic shell models involving anisotropy in more general 2D shells, such as the hollow structures of these helical architectures, may be useful if the user does not include lateral shearing. But it reproduces only experimental observations. If a small-scale effect of non-local elasticity is introduced, which considers that local strain is the collective output of the total force, the results suggest a resonance vibration as low as 10,000 times. However, in this concept, if a circumferential mode or local radial strain is involved, the oscillation onset frequency is reduced by a factor of 100,000. Thus, depending on the typical mode, the resonance of the helix is in the range of a few kHz to GHz, which means that a vibration with a bandwidth of 1: 1,000,000 times is observed.

  The capacitor molecular structure in the 2D hollow cylindrical mesh functions as a circuit that evolves at the resonant frequency in such a way as to function as an antenna and receiver for wireless and lossless electromagnetic power transmission. The radiance of this wireless transmission is that (i) the transmitting nanowire devices are bundled together to automatically select the receiving nanowire suitable for maximum power transmission, and (ii) transmit a small portion of the code wirelessly. Also in this case, the entire information packet can be transmitted, and (iii) the operating power can be automatically amplified in the “communication avalanche”. Such large-scale power transmissions are not only lossless, but rather generate the additional power logically as needed, which is always thought to be impossible with traditional communications engineering. I have been.

<Explanation of the spiral capacitor of the sixth invention>
A sixth invention is a spiral capacitor-inductor device comprising the arrayed unit capacitors according to any one of the first to fifth inventions, wherein two or more capacitors which are clearly different from each other are formed in one spiral structure. Used at different intervals to encode more than one symmetry.
A. Depending on the period or spatial gap of the arrangement of the capacitors in the spiraling chain, a new distinct type of symmetry is created in the structure. Multiple periods refer to multiple bands of resonance peaks.
B. Depending on the period, the resonance frequency gap changes, thus modulating the coupling between the different resonance peaks, which is used for non-linear energy canalization.
C. Multiple groups of capacitor molecules can be used to store a hierarchical network of codes in a helical structure, as groups of resonant peaks combine with each other and create distinct modes of vibration in the helical structure.

  Typically, a helical structure is created by using only one type of capacitor or capacitive molecule. First, a linear chain is designed and, due to the typical features of the structure, the linear structure takes the form of a helix. Normally, the principle of helical structure formation is that it is by no means a head-to-tail connection of the structure, but rather a small deviation in the Y and Z axes transforms the linear chain into a helical structure. Here, if more than one capacitive molecule is used, they are combined in a typical arrangement on a linear chain. As a result, it is considered that each molecule produces a resonance peak, and also their composition. However, if one takes some pattern of molecular arrangement and that same pattern on a helical assembly called a period repeats, the combination of patterns will also develop a new pattern. This new pattern is actually created with the constituent patterns placed together. The newly created pattern responds to a new frequency band for resonance, so the user observes another resonance band. Similar periodic encodings can also be generated by using different capacitive molecules located an appropriate distance apart on the chain.

  Thus, the structure is not considered to be an ideal helix, but rather a superposition of several different types of helices.

  FIG. 1 shows a schematic view of the capacitor inductor of the present invention. The device is a supramolecular assembly of unit capacitors, each shown as a black sphere. This figure shows a two-helix scheme in a small time interval when the capacitor is charged and the inductor is also charged, with E pointing to the region of the electric field only and E + B in the region of generating the electric and magnetic fields. is there. The flux generation area increases or decreases depending on time, so time is a fundamental control parameter. The charging and discharging times vary so that the device is continuously operable when the overall helical assembly is not full and not completely empty. That is, there is a maximum time for charge / discharge, below which there is also a lower frequency limit at which the device does not exhibit proportional charge-flux behavior.

  Since the fourth circuit element definition of the present patent application is that the magnetic flux produced increases as charge is stored, there is no opportunity for the magnetic flux to increase once the device is charged. From FIG. 2 it can be learned that the capacitor does not conduct after charging, and that the only way of conduction is by leakage current. This leakage current increases with the number of capacitors, which is natural simply because the leakage current is always independent of the applied bias, but rather depends on the number of available capacitors. Therefore, the features of the fourth circuit element of the present invention are (i) that it is a leakage current device, (ii) it does not depend on applied bias or current, and (iii) time or frequency of operation of the fourth circuit element. Including determining characteristics.

  This is in that the change in magnetic flux of the fourth circuit element should not operate as a function of the applied bias or current, and if so would never be a fourth circuit element but a simple inductor. Is crucial. The reason is simple: there are four parameters that sequentially generate the fourth circuit element. With respect to the fourth circuit element, the voltage and the current must not play any role, the dependence of the generated flux on the leakage current only depends on the applied bias or current on the relationship between the charge storage and the generated flux. Ensures that it does not play any role in

  Finally, the proportionality between the stored charge and the magnetic flux generated is guaranteed by the fact that the more capacitors charged, the higher the leakage current. The leakage currents from the element capacitors add up and travel through the spiral path, leading to the creation of magnetic flux. The fourth circuit element technique of the present patent application, also referred to as an H inductor, can be similar to a device composed of a leaky capacitor and an inductor that blocks dc current or dc bias. Devices cannot be operated directly using dc bias or current, they are indirect control parameters. For continuous operation, the dc bias or current must change, ie, the mode of operation is primarily ac signal, bias, or current.

  FIG. 3 shows that the helix pitch c and the circumference, together with the dielectric constant of the material, play a fundamental role in governing the time and conduction control of the system. This is remarkable because it is noticed that the control of the leakage current transport of the helical structure depends on the shape of the helical system having the features described in detail in the description of the first invention. One particular problem that the inventor focuses on here is that the fourth circuit element of the present invention is a shape controller, and the only property that is essential in defining the material characteristics of the helical architecture is the dielectric constant. It is in. By simply manipulating the shape and dielectric constant of the capacitive material, a wide range of devices can be created, and the inventor has created a diffusion of ions that follows the spiral path of the device to create a fourth circuit element. Can be used. In Patent Document 4, the inventor has described in detail materials that can be used for this purpose.

  FIG. 4a illustrates how the geometric and dielectric properties actually define the atomic-scale properties of a real fourth circuit element. When the geometric features control the transport of carriers, there are narrow energy traps located one after the other, which are not included in the band theory, and therefore the band structure decomposes, which is called band splitting, In some situations, it occurs such that the valence and conduction bands are closer at certain points. If a point contact is present, a large number of free carriers can reach the bottom of the point contact because of the thermal noise kT, and thus a small electrical bias can trigger the passage of a quantum of current from the valence band to the conduction band. . In practice, the formation of point contacts implies the existence of a particular geometrical path, where small energy is transmitted to element molecules (here, capacitors) to form a helical net, ie, a carrier throughout the device. Can be propagated. The geometric path is important, and no other event can occur outside of this path.

  FIG. 4b shows a case study on microtubule nanowires for brain neuron extraction. Indeed, a separate fragmented band is obtained for each new topological path on the microtubule surface. These individual paths are clearly separated in wavenumber vector space and may or may not have a common point of overlap. FIG. 4c shows a quantum tunneling image of the microtubule surface obtained by a scanning tunneling microscope. Here, the inventor observes that the spiral surface undergoes a fundamental change as far as the arrangement of the capacitors is concerned in order to change the transmission path. Here, the tubulin protein molecule has a structure that functions as a leaky capacitor. These capacitors rearrange themselves by a few atomic distances to create a new transmission path. Changes in the structure of a protein molecule or capacitor change its dielectric constant and change the pitch between two adjacent helical paths. These data suggest a direct indication that microtubules are piezoelectric and ferroelectric materials, and that these properties emerge from the fundamental fact that band structures are cracked and capacitors are elastic in their mechanical properties. Note that this is evidence. Thus, here, the capacitor of the fourth circuit element must have electromechanical properties for adjusting the preferred carrier transmission path of the fourth circuit element. Basic information about the four circuit elements is added. The same feature makes it possible to take advantage of mechanical elasticity in order to eliminate deformation naturally, ie via electromechanical properties.

  One very interesting property of the fourth circuit element is that it has lower and upper frequency limits of operation. FIG. 5 shows that the device does not work below a certain frequency. One reason described above with reference to FIG. 1 is that the device requires continuous charging / discharging for effective operation. Now, as mentioned above, if the device is charged or discharged longer than the threshold time, it is impossible to charge the device more than full charge or less than empty without any effect. is there. Thus, there is a threshold maximum time or a minimum frequency. This is attributable to the capacitance characteristics of the device. Here, there is another problem, the limitation of induction. If the charging / discharging of the fourth circuit element (H inductor) of the present invention is shorter than a certain time, the transmission of any carrier along the helical path cannot be triggered and thus the inductive properties will not be effective. The minimum time limit means the maximum frequency limit, thus obtaining the maximum frequency limit of the fourth circuit element of the present invention.

  FIG. 6 shows the remarkable features of the fourth circuit element. Temperature independent conductivity is expected from devices operating with leakage current. As described in connection with FIG. 4, the point contact gap is essentially a tunnel gap, carriers are stored at the junction, and if the temperature is below a certain upper limit, conduction across the helical structure will still be Under control of point contact gap. In FIG. 6, when writing to a memory bit at an arbitrary temperature and sweeping the temperature between 5K and 320K, the dc or ac conductivity representing the bit remains constant except for small jumps to equally spaced values. Indicates that it was discovered. Even under extreme thermal noise of 1 K / min, an oscillatory sweep between the two limiting conductivities is observed. Apart from the existence of strictly mechanical spring action, statistical analysis shows that jumps always occur in pairs, these jumps are very sharp in the conductivity region, and exhibit very narrow gate control, soliton It accumulates at this gate, suggesting that it is pumped as soon as the threshold magnitude is reached.

FIG. 7 shows how the lattice properties change when the structure functions as an inductor made of a leaky capacitor, such as a microtubule. The hysteresis region plotted as a function of the maximum sweep bias filling the ferroelectric state (information) passes linearly through the origin, and the two series of plots for 250K and 300K show that the polarizability is induced by the field, It shows that it is independent of temperature up to 300K. To extend it further, at 319 K (46 ° C.), the conductivity makes a quantized jump, and in the second jump at ３397 K (124 ° C.), a hysteresis region that measures the ferroelectric polarizability. Disappears. The hysteresis region oscillates above 319 K as the microtubules attempt to recover from the drop spontaneously. Tubulin undergoes a permanent change at 319K and 397K, the protofilaments detach, thus turning the completely square IV into a straight IV, the hysteresis region becomes zero, and thus the Curie temperature _Tc is 319K. Hamiltonian

  Use

To find the constants J _ij and use them to determine the value of the microtubule lattice.

By applying the equation of Domb et al was used to ascertain the _{T C.} Initially, the microtubules have a hexagonal lattice at T _C ９７397 K (top of FIG. 7 a), and under an electric field, the protofilaments “left” and “right” are 0. It moves backward 849 nm and forward 0.05 nm, producing a nearly hexagonal lattice at T _C ３319 K. Keeping T _C １９319 K unchanged, the microtubule can reverse its dipole if the electric field creates a more symmetric lattice (FIG. 7c). For a bistable memory switch, a voltage sweep at the threshold bias moves the tubulin charge center and physical movement is not essential. Further, a reduction in hysteresis is present in FIG. 7b, and the feature of the fourth circuit element that has the ability to spontaneously modify the placement of the capacitor (here, the protein) is the ferroelectric, pyroelectric and Further experimental studies have shown that fourth circuit elements, such as H inductors, may not exhibit their important properties if they lead to piezoelectricity but the additional conditions of the above proposal are not met. Provides support.
This is because the only physical property that the shape of the grating switches reversibly between two different configurations as a function of temperature, and both configurations differ in their electrical properties, is the general fourth property. It should be noted that this is possible only in circuit elements. However, the degree of realization of the phase transition in the lattice shape will vary depending on the typical structural parameters of the leaky capacitor.

  FIG. 8 shows the reversible switching between resonant and non-resonant states and how the grating structure is changed. In an array of scanning tunneling microscopy (STM) images, when a single microtubule is triggered by the resonant frequency ac signal and its surface is imaged at the same time, the entire grating image disappears and the ac signal is removed. It is shown that the lattice structure can be seen to return to the initial configuration immediately. The fourth type of circuit element proposed in the present invention has electromechanical properties, which change the local electron density distribution reversibly. This particular feature is described in the exemplary system at http: // www. nature. It can be observed live at com / articles / srep07303.

  FIG. 9 shows the resonance band of the microtubule. This triplet band of microtubules, shown in FIG. 9a at the MHz band, is not just a simple helical structure, but has multiple periods encoded within the helical symmetry. It is noteworthy. One particular symmetry produces one resonance peak. However, if more molecules are doped inside the linear chain of tubulin or the constituent capacitors of the device folded into a helical loop to make up the microtubule nanowire or device, then multiple instead of one Are observed. There are several doped molecules inside the tubulin protein, which are triggered by resonance alone across the microtubule helix, and thus the inventor has The existence of multiple coexisting helices was observed experimentally. This is the fourth circuit element inside the fourth circuit element. This is an important feature of the invention because the scaling up of the fourth circuit element into a complex operating circuit is achieved according to this path (one inside another). This particular problem is elaborated in the assertion of the sixth invention which is of a general nature. There are several different ways to create different spiral superpositions. Another example is DNA made of nucleic acids A, T, G, C, all four being four different types of leaky capacitors. These A, T, G, and C acids are arranged in such a way that their basic arrangement produces one particular set of periods. It should be noted that the helix implies circular symmetry and therefore a periodic or repetitive arrangement of a particular arrangement is always necessary so that a particular helix is obtained. Now, in one chain, several periodic codes can be entered side by side with small periods. These periods can then be arranged into another periodic unit. Thus, smaller periods form one set of codes, and larger periods form another set of codes. The length L of the chain is fixed, but the same space L can be used to fill in several layers of code, where there are n layers each having a length of L, The space is nL. In microtubules, the leaky capacitor is tubulin, where some molecules are doped internally to create several distinct coexisting helices, but in the case of DNA, the code is written side by side Is done. For the integration of the fourth circuit element, specific procedures need to be adopted depending on the material, microtubules and DNA are only two examples. The inventor has created several exemplary devices that use capacitors arranged in the form of inductors for commercial applications.

  The mechanical oscillations of the microtubules are shown using the TEM image of FIG. 9b. Whenever there are multiple distinct symmetry superpositions in one structure, it can be observed that the ac signal passing through the material experiences a very unique phase lag. In the case of microtubules, we observe in Figure 9c that it is a multiple of 45 degrees. However, it will vary depending on the type of principle employed to create the superposition of multiple helical symmetries. However, it is certain that the fourth circuit element of the invention is considered to exhibit a quantization of the phase difference between the input and output signals. That means that for the different types of phase lags we observe, there are certain rules associated with them.

  FIG. 10 shows one path for creating an integrated chip with a fourth circuit element of the present invention, the H inductor. We have again used microtubules to demonstrate the invention of this patent application. Here, it is demonstrated that the fourth circuit element of the present invention exhibits characteristics such as the antenna and receiver shown in FIG. 10a in a single piece of hardware. It is also shown that two single microtubule devices are placed side by side as shown in FIG. 10b to demonstrate wireless communication between them over very short distances. FIG. 10c shows that when one device is triggered by a particular component of the frequency signal, the same signal is carried to the other microtubule and a particular band is triggered. This particular antenna and receiver-like feature has been simulated by using antenna software and the results are shown in FIG. 10d. In addition, similar experiments were performed using calf thymus DNA. This is noteworthy in that short-range wireless communication is possible due to electromechanical vibrations, and such wireless communication can be used even when the device is immersed in a liquid or semi-fluid or gaseous medium. It should be.

  One interesting property of the resonance band shown in FIG. 9 and of the communication data in FIG. 10c is that the pumped energy is canalized non-linearly between the different resonance peaks, and thus the second aspect of the present invention. The four circuit elements perform non-linear energy canalization between their different resonance levels. By triggering morphological changes in the structure of the system and slightly moving the resonance peaks, it is possible to use a bundle of microtubules to encode the memory state and make multiple discrete decisions.

[Embodiment]
The inventors have used microtubules as biological samples for validation. However, some research was performed to produce industrial applications, using commercially available capacitors and soldering them in a spiral configuration.
Microtubules were extracted from pig brain by Cytoskeleton (Denver, CO, USA). The purified MT subunit (tubulin) was stored at -80C. To polymerize tubulin into 6.5 μm long microtubules, 160 μl of microtubule cushion buffer (60% v / v glycerol, 80 mM PIPES pH 6.8, 1 mM EGTA, 1 mM MgCl ₂ ) was added to 830 μl of general Tubulin buffer (80 mM PIPES pH 7, 1 mM EGTA, 2 mM MgCl ₂ ) and 10 μl of 100 mM GTP solution. This mixture was kept in an ice bath for 10 minutes. From this mixture, 200 μl of the solution was added to 1 mg of tubulin, which was again cultured in an ice bath for 10 minutes. Thereafter, the material was placed in a 35-37 ° C. incubator for 40 minutes. Then, to stabilize the microtubules, 20 μl of paclitaxel dissolved in anhydrous DMSO was added to the solution, which was incubated at 37 ° C. for an additional 10 minutes. The MT length was adjusted to about 4-20 μm.

To prepare the film, the solution was diluted 8-fold using microtubule cushion buffer and paclitaxel DMSO solution and held at -20 ° C overnight at a 45 ° tilted Si (100) substrate and between the toes. Dropped on the electrode. An electric field was applied across the substrate for parallel alignment of the MT. Excess MT solution was removed from the substrate using filter paper (Whatman). Then, the substrate was dipped into a general tubulin buffer, dried again by blowing N ₂ in a similar manner. This process was repeated twice. The substrate was then placed in the refrigerator for 3 hours and the surface was partially dried.

the α and β-tubulin, the reconstruction of the heterodimer dimensions 46 × 80 × 65Å ^3, was confirmed by atomic force microscopy by ultrafine chips. The configuration of lattice A was confirmed by potential mapping of MT.

  At the two ends of a single microtubule chain, two gold electrode pads were made to construct the device by electron beam lithography. The two end electrodes were connected to an external electronic measurement circuit.

  Unlike the memristors, the microtubules MT justify the symmetrical discussion of the individual properties of the three existing elements as tabulated in the inventor's earlier patent application, US Pat. I do. H in this patent application is a helical nanotube / nanowire that stores / releases electric charge, like C, and the helical current produces a magnetic flux, like L. The ideal H is significantly linear in the dc output, even though L and C grow / decay together internally. For purely geometric reasons, accurate flux regulators and the coexistence of L and C change the input ac signal out of phase. H can initiate ballistic transport because the entire architecture can be a coherent system under certain fields. Recently, helical / rosette nanotubes that look like H are under rigorous research, and the features of H in this patent application are similar to those properties. The MT regulates the storage / transport of electromagnetic energy by varying its length, providing the essential out-of-phase signal conversion capabilities to biosystems.

  In contrast, Chua uses only one symmetry argument Φ∞Q to define the memristor of the fourth element. Due to the periodicity of the helix and the quantized charge, the MT can precisely adjust its electromagnetic energy / power by changing its length. The threshold bias for switching to the ballistic regime increases with its length. At the same time, the magnetic flux increases in a staircase fashion. Thus, the change in length allows the MT to modulate the critical signals required for its energy storage and its coherent transport. Ultimately, it also changes the maximum logic state that it can handle. Thus, the fourth element MT inside a living cell can take on the active part in very complex multi-level signal processing through the cytoskeleton. Prior to the inventor's work, MT was only used as a capacitor (US Pat. No. 6,049,045).

Microtubule reconstitution, isolation, 4-probe electrode architecture:
Several types of tubulin were received from Cytoskeleton (Denver, CO, USA) and stored at -80 ° C. To polymerize tubulin into microtubules, microtubule cushion buffer (60% v / v glycerol, 80 mM PIPES pH 6.8, 1 mM EGTA, 1 mM MgCl ₂ ) was added to a common tubulin buffer (80 mM PIPES pH 7, 1 mM EGTA, 2 mM MgCl ₂ ) and / or GTP solution. This mixture was kept in an ice bath for 10 minutes. From this mixture, 200 μl of the solution was added to 1 mg of tubulin, which was again cultured in an ice bath for 10 minutes and in a 35-37 ° C. incubator for 40 minutes. Then, to stabilize the microtubules, 20 μl of paclitaxel dissolved in anhydrous DMSO was added to the solution, which was incubated at 37 ° C. for an additional 10 minutes. Single microtubules were isolated using dielectrophoresis and electrodes were grown using electron beam lithography.

Basic parameters of microtubule phonons and electron solitons:
The protrusion observed in the AFM image was identified as a soliton condensate for three reasons, and the protrusion moved about 1 μm per minute and was measured on a 25 μm long wire. The soliton density in FIG. 4b was obtained by counting the total number of soliton condensates (not individual solitons), dividing by the area of the scan, and taking 50% visibility as absolute. Periodicity λ
, Where is the wave number vector

And a is the lattice parameter, which is 8 nm, and 1 / n is the band fill plotted in FIGS. Formula of the soliton mass
Where u ₀ is the lattice strain, M is the mass of the three tubulin monomers that capture the defect site or point of asymmetry, 21 is the soliton length, and a is the lattice parameter. There is a _M s _{~300m e} for phonons soliton periodicity 3. Even though the electron solitons have masses Ms〜15me, statistically, the phonon soliton periodicity 3 accurately reflects synchrony, and thus the electron mass is ignored in this discussion. If the two phonon soliton rings have no gap between them, the electron soliton does not gain the space to exist, and thus the maximum band filling factor for the electron and phonon solitons is 0.5. Furthermore, no periodicity of> 96 nm has been observed, so the minimum band filling ratio is 0.09. Statistically, only four periodicities are observed, which yields tightly quantized band filling levels. Phonon protection reduces the speed of the ES to 400 km / h, even if the mass of the ES is ~ 300 me (me = mass of electrons).

  DNA, actin, micro and neurofilaments, collagen, etc. were also measured to confirm the characteristics of the fourth circuit element. Measurements were also performed on ZnO and other semiconductor and insulating helices. Claims and reviews are based on consistent results obtained for all materials. The principle obtained proves the assumption that an inductor made of a capacitor based on the arrangement proposed by the inventor leads to the behavior of the fourth circuit element.

  The fourth circuit element is used or can be used in various products such as, but not limited to, computer chips, low power devices, and other learning hardware. For example, the Hewlett-Packard Company is about to release a completely new kind of operating system, so a memristor or a kind of fourth circuit element encompasses a market of almost US $ 20 billion [6]. Thus, the present invention is expected to contribute to various technical fields including the technical fields described above.

Reference Signs List 101 unit capacitor 102 unit capacitor assembly 305 disk-shaped integrated chip plate 308 of the present invention disk-shaped conical 3D plate of the present invention

US Patent Application Publication No. 2009/0184397 US Patent Application Publication No. 2009/0163826 US Patent Application Publication No. 2002/0118077 International Publication No. 2011/132597 pamphlet U.S. Patent Application Publication No. 20080316677

Chua, L .; O. , Memristor-missing circuit element. IEEE Transactions on Circuit Theory CT18, 507-519 (1971) Strukov, D .; B. , Snider, G .; S. , Stewart, D .; R. , And Williams, R .; S. , The missing memristor found. Nature 453, 80-83 (2008) http: // en. wikipedia. org / wiki / Memristor Memristor and memristive state symposium 21 November 2008 http: // www. YouTube. com / watch? v = QFdDPzcZwbs Circuit elements with memory, memristor memcapacitor and memductor http: // arxiv. org / PS_cache / arxiv / pdf / 0901 / 0901.3682v1. pdf http: // www. technologyview. com / news / 5333066 / hp-will-release-a-revolutionary-new-operating-system-in-2015 /

Claims (6)

A spiral array of unit capacitors,
The unit capacitor as a component is a function of the stored charge between the upper and lower limits of the frequency created by the capacitive element and the inductive properties created by the spiral charge flow. Show a linear increase in output magnetic field,
The upper and lower frequency limits behave as bandpass filters; there are several such bandpass filters;
The device resonates at various frequencies having wavelengths longer and shorter than the length of the array,
Spiral array of unit capacitors. The helical array of unit capacitors exhibits a quantized linear increase in the magnetic field as a function of the stored charge;
The quantization is modulated by a first set of geometric parameters, i.e., the ratio between the diameter and the pitch of the helical array of said unit capacitors,
The split band gap between the valence band and the conduction band of the device changes a second set of geometric parameters of the arrangement of the unit capacitors in addition to the first set of geometric parameters. Adjusted by the
A helical array of unit capacitor devices according to claim 1. A unit capacitor of the array adjusts a leakage current in the spiral array by changing a chemical or non-chemical bond between the structural capacitors of the dielectric material used for the unit capacitor.
An array of unit capacitors behaves as a unit capacitor, some such unit capacitors are arranged in a three-dimensional orientation to constitute another unit capacitor, and growth continues at a variable scale and frequency band;
The lattice parameters formed by the helical array of unit capacitors on the virtual cylindrical surface are varied to adjust the generated magnetic flux,
A helical array of unit capacitors according to claim 1. A spiral array of unit capacitors,
Chemical or non-chemical bonding between the unit capacitors to adjust the helical path along the unit capacitor as a molecular structure and component of the capacitive material of the unit capacitor,
A. The device pumps out thermal noise caused by collisions of electricity, ions, and mechanical carriers by using specific local mechanical vibrations of the spiral wiring to activate various mechanical vibration modes, The device behaves as an automated noise eliminator in the temperature range by maintaining at least one noiseless electronic and electromagnetic energy transmission channel in the temperature range;
B. A helical array of capacitors undergoes multiple bipolar phase transitions at a particular temperature, exhibiting ferroelectric switching,
C. Physical or elastic stresses create carriers in the helical arrangement of the unit capacitors, modulate the propagation of the carriers, exhibit pyroelectricity and piezoelectricity,
Spiral array of unit capacitors, selected as follows. The molecular structure of the capacitive material such that the helical lattice parameter changes in any manner selected from the following AD through application of external electrical, magnetic, electromagnetic, or mechanical energy: A helical array of unit capacitors according to claim 1 or 2, wherein a helical combination thereof is selected.
A. Because of the elastic vibration, the resonance oscillates to produce a continuous fraction series of harmonic frequencies.
B. Because of the mechanical stresses and strains in the helical structure, the helical ring distributes the spontaneously stored charge at the two ends of the helical array of unit capacitors, which redistributes along the entire length. The device creates a charge density gradient along the length of the array of unit capacitors such that the standing wave formed by the charge gradient takes a different shape generating a plurality of harmonics and anharmonic frequencies. .
C. Because of the helical structure, the charge density distribution along the length of the device results in a standing wave curvature whose diameter is longer than the length of the device, and the interaction of mechanical oscillations in the standing wave is the unit. It produces electromechanical vibrations in a spiral arrangement of capacitors.
D. The dielectric material and the helical shape allow the device to absorb a frequency corresponding to a band gap separated from an input signal and emit a signal in accordance with the relaxed mechanical symmetry, so that the electromechanical device in a predetermined frequency range. It has a specific group of structural symmetries that allow it to act as an effective antenna and receiver. Two or more distinctly different unit capacitors are used at different intervals to encode two or more symmetries in a single helical shape,
A. Depending on the period defined by the helical gap of the capacitor arrangement on the helical array of unit capacitors, a new distinct lattice symmetry is created in the structure, and the presence of a plurality of lattice parameters results in a plurality of standing waves, Therefore, a plurality of bands at the resonance peak are formed,
B. In response to the period, the gap between the resonance frequencies changes to modulate the coupling between the different resonance peaks, nonlinearly channeling energy through a spiral path created by the unit capacitor,
C. Using a plurality of capacitor molecules to form a group of resonant peaks so that the period of oscillation can be stored in the helical structure so that it can act as a memory switching device in the form of reversible write, read, and erase Combine with each other to create separate periodic and aperiodic vibration modes in said diverging structure,
A helical array of unit capacitors according to claim 5.