JP6684063B2 - Semiconductor light emitting device - Google Patents

Description

  Embodiments of the present invention relate to a semiconductor light emitting device.

  In a semiconductor light emitting device, there is a configuration in which a semiconductor layer of an LED (Light Emitting Diode) is epitaxially grown on a growth substrate, bonded to a supporting substrate, and then the growth substrate is removed. In a semiconductor light emitting device, improvement in light extraction efficiency is required.

JP, 2014-49642, A JP, 2013-201253, A JP, 2006-128457, A

  An object of the embodiment is to provide a semiconductor light emitting device having high light extraction efficiency.

The semiconductor light emitting device according to the embodiment, a substrate, a first conductive member, a second conductive member, a first semiconductor layer of a first conductivity type provided through the first conductive member on said substrate, provided via the second conductive member on the substrate, a second semiconductor layer of the second conductivity type located between the substrate and the first semiconductor layer, and a portion of said first semiconductor layer said A light emitting layer provided between the second semiconductor layer, a conductive portion provided on the substrate, and a rectifying portion provided on the conductive portion and connected to the first conductive member and the conductive portion. , Are provided. The rectifying unit includes a semiconductor portion of a first conductivity type and the semiconductor portion of the second conductivity type, the semiconductor portion of the second conductivity type is connected to the first conductive member, a semiconductor portion of the first conductivity type Are connected to the conductive portion, and the upper surface of the conductive portion is at substantially the same height as the surface of the first conductive member connected to the semiconductor portion of the second conductivity type .

FIG. 3 is a cross-sectional view illustrating the semiconductor light emitting device according to the first embodiment. (A)-(d) is process sectional drawing which illustrates the manufacturing method of the semiconductor light-emitting device which concerns on 1st Embodiment. (A)-(c) is process sectional drawing which illustrates the manufacturing method of the semiconductor light-emitting device which concerns on 1st Embodiment. 4A to 4C are process cross-sectional views illustrating the method for manufacturing the semiconductor light emitting device according to the first embodiment. It is sectional drawing which illustrates the semiconductor light-emitting device which concerns on 2nd Embodiment. (A)-(c) is process sectional drawing which illustrates the manufacturing method of the semiconductor light-emitting device which concerns on 2nd Embodiment. It is sectional drawing which illustrates the semiconductor light-emitting device which concerns on 3rd Embodiment. (A)-(c) is process sectional drawing which illustrates the manufacturing method of the semiconductor light-emitting device which concerns on 3rd Embodiment. 6A to 6C are process cross-sectional views illustrating a method for manufacturing a semiconductor light emitting device according to a third embodiment. It is sectional drawing which illustrates the semiconductor light-emitting device which concerns on 4th Embodiment. 9A to 9C are process cross-sectional views illustrating a method for manufacturing a semiconductor light emitting device according to a fourth embodiment. It is sectional drawing which illustrates the semiconductor light-emitting device which concerns on 5th Embodiment. (A)-(d) is process sectional drawing which illustrates the manufacturing method of the semiconductor light-emitting device which concerns on 5th Embodiment. (A) And (b) is process sectional drawing which illustrates the manufacturing method of the semiconductor light-emitting device which concerns on 5th Embodiment. It is sectional drawing which illustrates the semiconductor light-emitting device which concerns on 6th Embodiment. (A) And (b) is process sectional drawing which illustrates the manufacturing method of the semiconductor light-emitting device which concerns on 6th Embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
First, the first embodiment will be described.
FIG. 1 is a sectional view illustrating a semiconductor light emitting device according to this embodiment.

  As shown in FIG. 1, a substrate 10 is provided in the semiconductor light emitting device 100 according to this embodiment. Wirings 10a and 10b are provided on the substrate 10. On the substrate 10, the wirings 10a and 10b are patterned into a predetermined pattern. Bumps 11 are provided on the wiring 10a. Bumps 12 are provided on the wiring 10b. On the wirings 10a and 10b, the bumps 11 and 12 are installed with a predetermined space. An electrode portion 13 is provided on the bump 11, and an electrode portion 14 is provided on the bump 12. The reflection part 15 is provided on the electrode part 13. Further, a reflecting portion 18 is provided on the electrode portion 14. A p-type semiconductor layer 16 is provided on the reflecting section 15. A light emitting layer 17 is provided on the semiconductor layer 16. An n-type semiconductor layer 19 is provided on the light emitting layer 17 and the reflecting portion 18. The semiconductor layer 16, the light emitting layer 17, and the semiconductor layer 19 are in contact with each other.

  The direction from the substrate 10 to the semiconductor layer 19 is the Z direction (first direction). One direction orthogonal to the Z direction is defined as the X direction (second direction). The direction orthogonal to the Z direction and the X direction is the Y direction (third direction).

  The thickness of the electrode portion 13 in the Z direction is smaller than the thickness of the electrode portion 14 in the Z direction.

  The chip 91 includes electrode portions 13 and 14, a reflection portion 15, a semiconductor layer 16, a light emitting layer 17, a reflection portion 18, and a semiconductor layer 19. The structure 92 includes the bumps 11 and 12 and the chip 91. A plurality of structures 92 may be provided on the substrate 10.

  A resin layer 81 that covers the structure 92 is provided on the substrate 10. Phosphors 81 a are dispersed in the resin layer 81.

The substrate 10 is formed of, for example, an insulating material such as silicon oxide (SiO ₂ ). As the substrate 10, a ceramic substrate having a low coefficient of thermal expansion is preferable. The substrate 10 is, for example, a white substrate. The substrate 10 has reflectivity. The reflectance of the substrate 10 is higher than the reflectance of the bumps 11 and 12, for example. The board 10 may be, for example, a printed board.

  The semiconductor layer 16, the light emitting layer 17, and the semiconductor layer 19 include, for example, a nitride semiconductor. The light emitting layer 17 has a single quantum well (SQW: Single Quantum Well) structure or a multiple quantum well (MQW: Multi Quantum Well) structure.

  The light emitting layer 17 having a single quantum well structure includes, for example, two barrier layers and a well layer provided between the barrier layers. The light emitting layer 17 having a multiple quantum well structure includes three or more barrier layers and a well layer provided between the barrier layers. For the barrier layer, for example, a compound semiconductor such as gallium nitride (GaN) can be used. For the well layer, for example, a compound semiconductor such as indium gallium nitride (InGaN) can be used. When the barrier layer contains indium (In), the composition ratio of indium in the barrier layer is lower than the composition ratio of indium in the well layer.

  The reflectors 15 and 18 include a material having a high reflectance such as silver (Ag) or aluminum (Al).

That is, the semiconductor light emitting device 100 according to the present embodiment includes the substrate 10, the first resin layer containing a phosphor, the first and second semiconductor layers, the light emitting layer 17, and the first and second conductive members. Including. The first resin layer is, for example, the resin layer 81. The first semiconductor layer is provided between the substrate 10 and the first resin layer and has the first conductivity type. The first semiconductor layer is, for example, the semiconductor layer 19. The first conductive member is provided between the substrate 10 and a part of the first semiconductor layer. The first semiconductor layer is provided on the substrate 10 via the first conductive member. The first conductive member is, for example, the electrode unit 14. The first conductive member may include the bump 12. The first conductive member may include the wiring 10b. The light emitting layer 17 is provided between the substrate 10 and the other portion of the first semiconductor layer. The second semiconductor layer is provided between the substrate 10 and the light emitting layer 17, and has the second conductivity type. The second semiconductor layer is provided on the substrate 10 via the second conductive member. The second semiconductor layer is, for example, the semiconductor layer 16. The second conductive member is provided between the substrate 10 and the second semiconductor layer. The second conductive member is, for example, the electrode portion 13. The second conductive member may include the bump 11. The second conductive member may include the wiring 10a.
As shown in FIG. 1, a first reflecting portion (reflecting portion 18) may be provided between the first semiconductor layer (semiconductor layer 16) and the first conductive member (for example, the electrode portion 14). The light reflectance of the reflecting portion 18 is higher than the light reflectance of the electrode portion 14. Further, a second reflecting portion (reflecting portion 15) may be provided between the second semiconductor layer (semiconductor layer 16) and the second conductive member (for example, the electrode portion 13).
The light reflectance of the reflecting portion 15 is higher than that of the electrode portion 13.
The resin layer 81 is provided around the structure 92. That is, in the direction orthogonal to the Z direction (for example, the X direction and the Y direction), the resin layer 81 and the structure 92 overlap.

Next, a method for manufacturing the semiconductor light emitting device 100 according to this embodiment will be described.
2A to 2D are process cross-sectional views illustrating the method for manufacturing the semiconductor light emitting device according to this embodiment.
3A to 3C are process cross-sectional views illustrating the method for manufacturing the semiconductor light emitting device according to this embodiment.
4A to 4D are process cross-sectional views illustrating the method for manufacturing the semiconductor light emitting device according to this embodiment.

  First, as shown in FIG. 2A, the substrate 70 is prepared. The substrate 70 is, for example, a silicon substrate or the like. The substrate 70 may be, for example, a sapphire substrate.

  Next, as shown in FIG. 2B, the n-type semiconductor layer 19, the light emitting layer 17, and the p-type semiconductor layer 16 are formed in this order on the substrate 70. The semiconductor layer 19, the light emitting layer 17, and the semiconductor layer 16 are, for example, nitride semiconductors. The semiconductor layer 19, the light emitting layer 17, and the semiconductor layer 16 are formed by a film forming method such as epitaxial growth.

  Next, as shown in FIG. 2C, the reflection section 15 is formed on the semiconductor layer 16. The reflector 15 includes a material having a high reflectance, such as silver (Ag) or aluminum (Al).

  Next, as shown in FIG. 2D, the light emitting layer 17, the semiconductor layer 16 and the reflecting portion 15 formed on the semiconductor layer 19 are partially removed to expose a part of the surface of the semiconductor layer 19. The reflective portion 18 is formed on the exposed surface of the semiconductor layer 19. The reflector 18 is separated from the light emitting layer 17 and the semiconductor layer 16.

  Next, as shown in FIG. 3A, the electrode portion 14 is formed on the reflecting portion 18. The electrode portion 14 is formed without contacting the light emitting layer 17 and the semiconductor layer 16. Further, the electrode portion 13 is formed on the reflecting portion 15. As a result, the chip 91 including the semiconductor layer 19, the light emitting layer 17, the reflective portion 18, the semiconductor layer 16, the reflective portion 15, the electrode portion 13 and the electrode portion 14 is formed on the substrate 70.

  Next, as shown in FIG. 3B, bumps 11 and 12 are formed on the substrate 10 on which the wirings 10a and 10b are provided. The bump 11 is formed on the wiring 10a. The bump 12 is formed on the wiring 10b. Then, the chip 91 formed on the substrate 70 is bonded to the substrate 10 via the bumps 11 and 12 by flip chip bonding (FCB). In this case, the bump 11 is brought into contact with the electrode portion 13 of the chip 91 and the bump 12 is brought into contact with the electrode portion 14. That is, the chip 91 formed on the substrate 70 is turned upside down together with the substrate 70 and bonded to the substrate 10 via the bumps 11 and 12. As a result, the structure 92 is formed from the bumps 11 and 12 and the chip 91. A plurality of structures 92 are formed on the substrate 10 by joining a plurality of chips 91. The chip 91 may be joined to the wirings 10a and 10b of the substrate 10 with a conductive adhesive material (first and second connection members) such as solder or silver paste.

  For example, the ductility of the first connecting member is higher than the ductility of the electrode portion 14. For example, the ductility of the second connecting member is higher than the ductility of the electrode portion 13. For example, the melting point of the first connecting member is lower than the melting point of the electrode portion 14. For example, the melting point of the second connecting member is lower than the melting point of the electrode portion 13.

  Next, as shown in FIG. 3C, the substrate 70 is removed from above the chip 91. The substrate 70 is removed by an etching process such as wet etching. Next, as shown in FIG. 4, a resin layer 81 that covers the entire structure 92 is formed on the substrate 10. The phosphor 81a is dispersed in the resin layer 81.

  After that, as shown in FIG. 1, the resin layer 81 and the substrate 10 are separated at a predetermined interval, and the semiconductor light emitting device 100 including a predetermined number of structures 92 is singulated. As described above, the semiconductor light emitting device 100 is manufactured by the steps shown in FIGS.

Next, the effects of this embodiment will be described.
A semiconductor layer (a film corresponding to the semiconductor layer 19, the light emitting layer 17, and the semiconductor layer 16) is epitaxially grown on the growth substrate, a reflection portion is formed on the semiconductor layer, and the support substrate is bonded to the growth substrate to remove the growth substrate. There is a configuration to do. The LED chip having such a structure is mounted on the package substrate. In this configuration, the light emitted from the LED chip may be reflected inside the package and enter the support substrate. When the supporting substrate is a substrate having a light absorbing property (for example, a silicon substrate), such returning light is absorbed by the supporting substrate and the light extraction efficiency is reduced. For example, even when the reflecting portion is provided between the support substrate and the semiconductor layer as described above, the return light is incident on the side surface of the support substrate, and thus light absorption occurs. Therefore, the support substrate hinders the improvement of the light extraction efficiency.

  On the other hand, in the semiconductor light emitting device 100 according to this embodiment, the chip 91 is mounted on the substrate 10 without the support substrate. The substrate 10 has reflectivity. The reflectance of the substrate 10 is higher than that of a supporting substrate (for example, a silicon substrate), for example. In the embodiment, since there is no supporting substrate that absorbs the returning light, the light extraction efficiency is improved. Further, the step of attaching to the supporting substrate can be omitted. As a result, the manufacturing process can be shortened and the manufacturing cost can be reduced.

  There is a structure in which a semiconductor layer having a large area is obtained by using a light-absorbing silicon substrate as a growth substrate. In this case, the loss of light is suppressed by removing the growth silicon substrate. A supporting substrate is generally used to maintain mechanical strength during removal of the growing silicon substrate. In this configuration, as described above, the support substrate causes a problem of absorption of return light.

  On the other hand, in the semiconductor light emitting device 100 according to the present embodiment, the chip 91 is mounted on the substrate 10 without the support substrate, as described above. High light extraction efficiency can be obtained by not using a supporting substrate. Furthermore, high productivity can be obtained. That is, the configuration of the embodiment is particularly advantageous in the configuration in which the light absorbing silicon substrate is used as the growth substrate.

(Second embodiment)
Next, a second embodiment will be described.
FIG. 5 is a cross-sectional view illustrating the semiconductor light emitting device according to this embodiment.

  As shown in FIG. 5, in the semiconductor light emitting device 200 according to this embodiment, the resin layer 21 is provided on the substrate 10. The resin layer 21 covers the side surface of the structure 92 formed on the substrate 10. A resin layer 22 is provided on the resin layer 21. Phosphors 22a are dispersed in the resin layer 22. The configuration is the same as that of the semiconductor light emitting device 100 according to the above-described first embodiment, except for the configuration in which the resin layers 21, 22 and the phosphor 22a are provided instead of the resin layer 81 and the phosphor 81a. Further, the resin layer 21 may have light reflectivity for reflecting the light emitted from the light emitting layer 17 and the light emitted from the phosphor 22a. Further, the resin layer 21 may include a material having high thermal conductivity. White resin may be used for the resin layer 21, for example.

Next, a method for manufacturing the semiconductor light emitting device 200 according to this embodiment will be described.
6A to 6C are process cross-sectional views illustrating the method for manufacturing the semiconductor light emitting device according to this embodiment.
First, similar to the method of manufacturing the semiconductor light emitting device 100 according to the first embodiment, the steps shown in FIGS. 2A to 3B are performed.

  Next, as shown in FIG. 6A, a resin layer 21 is formed on the substrate 10 by applying a raw material liquid such as a liquid resin with a coating device such as a dispenser. The resin layer 21 covers a portion below the upper surface of the semiconductor layer 19. In this case, the height of the resin layer 21 is adjusted by adjusting the amount of the raw material liquid applied with the dispenser. The resin layer 21 may include a material having light reflectivity. Moreover, the resin layer 21 may include a material having a high thermal conductivity. Next, as shown in FIG. 6B, the substrate 70 is removed from above the semiconductor layer 19. The substrate 70 is removed by an etching process such as wet etching. At this time, when the wet etching chemical is a chemical that exerts an etching effect on the substrate 10, the resin layer 21 serves as a mask for the substrate 10.

  Next, as shown in FIG. 6C, the resin layer 22 is formed on the semiconductor layer 19 and the resin layer 21. A phosphor 22a is dispersed in the resin layer 22. After that, as shown in FIG. 5, the resin layers 21 and 22 and the substrate 10 are cut at a predetermined interval to be individualized as a semiconductor light emitting device 200 including a predetermined number of structures 92. As described above, the semiconductor light emitting device 200 is manufactured by the steps shown in FIGS. 2A to 3B and FIGS. 6A to 6C as described above.

Next, the effects of this embodiment will be described.
According to this embodiment, in the semiconductor light emitting device 200 according to this embodiment, the substrate 10 is covered with the resin layer 21. When the substrate 70 is removed by wet etching, since the resin layer 21 covers the upper surface of the substrate 10, direct action of the chemical liquid for etching on the substrate 10 is suppressed. This relaxes the etching conditions. Further, by etching the substrate 10 with the chemical solution, it is possible to suppress the occurrence of troubles such as peeling of the structure 92 from the substrate 10.

  Further, when the resin layer 21 includes a material having high thermal conductivity, it is possible to improve heat dissipation in the semiconductor light emitting device 200. Further, when the resin layer 21 contains a material having a high reflectance, the light extraction efficiency can be improved. The effects other than the above are similar to those of the first embodiment described above.

(Third Embodiment)
Next, a third embodiment will be described.
FIG. 7 is a cross-sectional view illustrating the semiconductor light emitting device according to this embodiment.
As shown in FIG. 7, in the semiconductor light emitting device 300 according to this embodiment, the resin layer 32 is provided immediately above the chip 91, that is, immediately above the semiconductor layer 19. The resin layer 31 is provided on the side surfaces of the chip 91 and the resin layer 32. The upper surfaces (the surfaces facing the resin layer 31) of the resin layers 31 and 32 are concave curved surfaces, respectively.

  A resin layer 31 is embedded between the bumps 11 and 12. A resin layer 33 is provided on the resin layers 31 and 32.

  The resin layer 31 may include a material having light reflectivity. In addition, the resin layer 31 may include a material having high thermal conductivity. Phosphors 32a are dispersed in the resin layer 32. The resin layer 33 is preferably a transparent resin. The configuration is the same as that of the semiconductor light emitting device 100 according to the first embodiment described above except the configuration in which the resin layers 31, 32, 33 and the phosphor 32a are provided instead of the resin layer 81 and the phosphor 81a.

Next, a method of manufacturing the semiconductor light emitting device 300 according to this embodiment will be described.
8A to 8C are process cross-sectional views illustrating the method for manufacturing the semiconductor light emitting device according to this embodiment.
9A to 9D are process cross-sectional views illustrating the method for manufacturing the semiconductor light emitting device according to this embodiment.
First, similar to the method of manufacturing the semiconductor light emitting device 100 according to the first embodiment, the steps shown in FIGS. 2A to 3B are performed.

  Next, as shown in FIG. 8A, the resin layer 31 is formed on the substrate 10 so as to cover the side surfaces of the structure 92 and the substrate 70. In this case, the resin layer 31 is formed by applying the raw material liquid of the resin layer 31 onto the substrate 10 with a coating device such as a dispenser. The raw material liquid of the resin layer 31 is solidified in a state where the portion in contact with the substrate 70 is raised due to the surface tension. As a result, the upper surface of the resin layer 31 has a concave curved surface shape. In addition, the resin layer 31 may include a material having light reflectivity. Further, the resin layer 31 may include a material having high thermal conductivity.

  Next, as shown in FIG. 8B, the substrate 70 is removed from above the chip 91 by an etching process such as wet etching.

  Next, as shown in FIG. 8C, the resin layer 32 is formed on the chip 91 in the region where the substrate 70 is removed. In this case, the resin layer 32 is formed by applying the raw material liquid of the resin layer 32 onto the semiconductor layer 19 of the chip 91 with an application device such as a dispenser on the chip 91. The raw material liquid of the resin layer 32 is solidified in a state where the portion in contact with the resin layer 31 is raised due to the surface tension. As a result, the upper surface of the resin layer 32 is formed into a concave curved surface. Phosphors 32a are dispersed in the resin layer 32.

Next, as shown in FIG. 9, a resin layer 33 is formed on the resin layer 31 and the resin layer 32. The resin layer 33 is transparent to the light emitted from the light emitting layer 17 and the light emitted from the phosphor 32a. That is, the resin layer 33 has optical transparency.
Next, as shown in FIG. 7, the resin layers 31 and 33 and the substrate 10 are separated at predetermined intervals, and the semiconductor light emitting device 300 including a predetermined number of structures 92 is divided into individual pieces. As described above, the semiconductor light emitting device 300 is manufactured by the steps shown in FIGS. 2A to 3B and FIGS. 8A to 9.

Next, effects of the semiconductor light emitting device 300 according to this embodiment will be described.
According to this embodiment, in the semiconductor light emitting device 300 according to this embodiment, the upper surface of the resin layer 32 is formed into a concave curved surface. As a result, the light can be condensed in the directly upward direction, so that the orientation of the light is improved. In addition, a resin layer 33 having light transmittance is provided on the resin layer 32 in which the phosphor 32a is dispersed. As a result, the light emitted from the chip 91 and the light emitted by the phosphor 32a in the resin layer 32 are mixed in the resin layer 33, so that color breakup is suppressed. The effects other than the above are the same as those of the second embodiment described above.

(Fourth Embodiment)
Next, a fourth embodiment will be described.
FIG. 10 is a cross-sectional view illustrating the semiconductor light emitting device according to this embodiment.
As shown in FIG. 10, in the semiconductor light emitting device 400 according to this embodiment, the resin layer 41 is provided on the resin layer 31 and the resin layer 32. The resin layer 41 is formed in the shape of a convex lens with the convex surface facing upward in the region directly above the resin layer 32. The configuration other than the configuration in which the resin layer 41 is formed instead of the resin layer 33 is similar to that of the semiconductor light emitting device 300 according to the third embodiment described above. Further, the resin layer 41 has a light transmissive property.

Next, a method of manufacturing the semiconductor light emitting device 400 according to this embodiment will be described.
11A to 11D are process cross-sectional views illustrating the method for manufacturing the semiconductor light emitting device according to this embodiment.
First, similar to the method of manufacturing the semiconductor light emitting device 300 according to the third embodiment, the steps shown in FIGS. 2A to 3B and 8A to 8C are performed.

  Next, as shown in FIG. 11, a resin layer 41 is formed on the resin layers 31 and 32. The resin layer 41 is formed in the shape of a convex lens with the convex surface facing upward in the region directly above the resin layer 32. After that, as shown in FIG. 10, the resin layers 31, 32, 41 are divided at predetermined intervals, and individualized as a semiconductor light emitting device 400 including a predetermined number of structures 92. As described above, the semiconductor light emitting device 400 is manufactured by carrying out the steps shown in FIGS. 2A to 3B, 8A to 8C, and 11.

Next, effects of the light emitting device 400 according to the present embodiment will be described.
According to the present embodiment, the light emitted from the chip 91 via the resin layer 32 can be condensed in the directly upward direction by the resin layer 41, so that the orientation is improved. The effects other than the above are similar to those of the third embodiment described above.

(Fifth Embodiment)
Next, a fifth embodiment will be described.
FIG. 12 is a sectional view illustrating a semiconductor light emitting device according to the fifth embodiment.
As shown in FIG. 12, in the semiconductor light emitting device 500 according to this embodiment, wirings 10 a, 10 b and 10 c are provided on the substrate 10. Bumps 11 are provided on the wiring 10a. The bump 12 is provided on the wiring 10b, and the bump 51 (third connecting member) is provided on the wiring 10c. A conductive portion 52 is provided on the bump 51. A rectifying section 53 is formed on the conductive section 52. The rectifying section 53 includes a p-type semiconductor section 54 and an n-type semiconductor section 55. The lower surface of the semiconductor portion 55 is connected to the conductive portion 52, and at least a part of the upper surface and the side surface is covered with the semiconductor portion 54. A part of the side surface of the semiconductor layer 19 is covered with the electrode portion 14. In this case, the electrode portion 14 has, for example, an L shape. The electrode portion 14 is connected to the semiconductor portion 54. In the height direction, the upper surface of the conductive portion 52 is substantially at the same height as the surface of the electrode portion 14 connected to the semiconductor portion 54. The configuration other than the above is the same as that of the semiconductor light emitting device 100 according to the first embodiment described above.

  In this case, the semiconductor portion 54 of the rectifying portion 53 is in partial contact with the upper surface of the electrode portion 14. In addition, the electrode portions 13 and 14, the conductive portion 52, the reflecting portion 15, the semiconductor layer 16, the light emitting layer 17, the reflecting portion 18, the semiconductor layer 19, and the rectifying portion 53 are included in the chip 93. Further, the bumps 11, 12, 51 and the chip 93 are included in the structure 94.

Next, a method of manufacturing the semiconductor light emitting device according to this embodiment will be described.
13A to 13D are process cross-sectional views illustrating the method for manufacturing the semiconductor light emitting device according to this embodiment.
First, as shown in FIG. 13A, impurities are selectively ion-implanted into a part including the upper surface of the p-type semiconductor substrate 50 using a photoresist or the like as a mask to form an n-type semiconductor substrate. The semiconductor part 55 (first semiconductor region) is formed. After that, the mask is removed. Then, the n-type semiconductor layer 19, the light emitting layer 17, and the p-type semiconductor layer 16 are formed in this order on the semiconductor substrate 50 and the semiconductor portion 55. The semiconductor layer 19, the light emitting layer 17, and the semiconductor layer 16 are formed by a film forming method such as epitaxial growth. Further, the reflecting portion 15 is formed on the semiconductor layer 16.

  Next, as shown in FIG. 13B, the semiconductor layer 19, the light emitting layer 17, and the semiconductor layer 16 on the semiconductor portion 55 and the semiconductor layer 19, the light emitting layer 17, and the semiconductor layer 16 on the semiconductor substrate 50 in the periphery thereof are formed. Remove some. As a result, the upper surface of the semiconductor portion 55 and the upper surface of the semiconductor substrate 50 around it are also exposed. At this time, a part of the upper surface of the semiconductor layer 19 is also exposed. Then, the reflecting portion 18 is formed on the exposed surface of the semiconductor layer 19.

  Next, as shown in FIG. 13C, the conductive portion 52 is formed on the semiconductor portion 55, and the electrode portion 14 is formed on the exposed surface of the semiconductor substrate 50 and the reflecting portion 18. Further, the electrode portion 13 is formed on the reflecting portion 15. In this case, the electrode portions 13 and 14, the conductive portion 52, the reflection portion 15, the semiconductor layer 16, the light emitting layer 17, the reflection portion 18, the semiconductor layer 19, the semiconductor portion 55, and the semiconductor substrate part 50 (54) (second semiconductor) The area) is included in the chip 93.

  Next, as shown in FIG. 13D, the substrate 10 provided with the wirings 10a, 10b and 10c is prepared. The bump 11 is formed on the wiring 10a. The bump 12 is formed on the wiring 10b. The bump 51 is formed on the wiring 10c. Then, the chip 93 together with the semiconductor substrate 50 is flip-chip bonded (FCB: Flip Chip Bonding) on the substrate 10 via the bumps 11, 12, and 51. In this case, the bump 11 is brought into contact with the electrode portion 13 of the chip 93, and the bump 12 is brought into contact with the electrode portion 14. Further, the bump 51 is brought into contact with the conductive portion 52. That is, the chip 93 formed on the semiconductor substrate 50 is turned upside down together with the semiconductor substrate 50 and bonded onto the substrate 10 via the bumps 11, 12, 51. Thereby, the bumps 11, 12, 51 and the chip 93 form a structure 94. A plurality of structures are formed on the substrate 10 by joining a plurality of chips 93. The chip 93 may be bonded to the substrate 10 with a conductive adhesive such as solder or silver paste.

  Next, as shown in FIG. 14A, the semiconductor substrate 50 is removed from above the chip 93, leaving a part 50 (54) of the semiconductor substrate. In this case, in the semiconductor substrate 50, the portion which is in contact with the electrode portion 14 and covers the semiconductor portion 55 is left. As a result, the remaining portion of the semiconductor substrate 50 becomes the semiconductor portion 54.

  Next, as shown in FIG. 14B, a resin layer 81 that covers the entire structure 94 is formed on the semiconductor substrate 10. The phosphor 81a is dispersed in the resin layer 81. Then, as shown in FIG. 12, thereafter, the resin layer 81 and the substrate 10 are separated at predetermined intervals, and individualized as a semiconductor light emitting device 500 including a predetermined number of structures 94. As described above, the semiconductor light emitting device 500 is manufactured by the steps shown in FIGS. 13A to 14B.

Next, the effects of this embodiment will be described.
In the semiconductor light emitting device 500 according to this embodiment, the chip 93 includes the rectifying unit 53. Accordingly, the semiconductor light emitting device 500 can be protected from overvoltage. Further, the semiconductor light emitting device 500 can be protected from overvoltage without providing a rectifying element such as a Zener diode and a wiring for connecting the rectifying element to the chip 93 outside the chip. As a result, the size of the device can be reduced. The effects other than the above are similar to those of the first embodiment described above.

(Sixth Embodiment)
Next, a sixth embodiment will be described.
FIG. 15 is a cross-sectional view illustrating the semiconductor light emitting device according to this embodiment.
As shown in FIG. 15, the semiconductor light emitting device 600 according to the present embodiment is provided with the reflecting portion 61 that covers the upper surface and the side surface of the rectifying portion 53. The reflecting portion 61 includes a material having a high reflectance, such as aluminum and silver. The configuration other than the above is the same as that of the semiconductor light emitting device 500 according to the fifth embodiment described above.

Next, a method of manufacturing the semiconductor light emitting device 600 according to this embodiment will be described.
16A to 16C are process cross-sectional views illustrating the manufacturing method of the present embodiment.
In the method of manufacturing the semiconductor light emitting device 600 according to the present embodiment, first, as in the fifth embodiment, the steps shown in FIGS. 13A to 14A are performed.
Next, as shown in FIG. 16A, the upper surface and the side surface of the rectifying section 53 are covered with the reflecting section 61. The reflecting portion 61 is formed by using a material having a high reflectance, such as aluminum or silver.

Next, as shown in FIG. 16B, a resin layer 81 that covers the structure 94 is formed. The phosphor 81a is dispersed in the resin layer 81. After that, as shown in FIG. 15, the resin layer 81 is divided at predetermined intervals, and individualized as a semiconductor light emitting device 600 including a predetermined number of structures 94.
As described above, the semiconductor light emitting device 600 is manufactured by the steps shown in FIGS. 13A to 14A, 16A and 16B.

Next, the effects of this embodiment will be described.
In the present embodiment, the side surface and the upper surface of the rectifying section 53 in the semiconductor light emitting device 600 are covered with the reflecting section 61. Thereby, when the light reflectance of the rectifying unit 53 is low, the light extraction efficiency is improved. Effects other than the above are similar to those of the semiconductor light emitting device 500 according to the fifth embodiment described above.

  In the above-described embodiment, the first conductivity type is p-type and the second conductivity type is n-type. In addition, in the above-described first to fourth embodiments, it is possible to switch between both conductivity types.

  According to the embodiments described above, it is possible to realize a semiconductor light emitting device with high light extraction efficiency and a method for manufacturing the same.

In the present specification, the term “nitride semiconductor” means B _x In _y Al _z Ga _1-x−y−z N (0 ≦ x ≦ 1,0 ≦ y ≦ 1,0 ≦ z ≦ 1, x + y + z ≦. In the chemical formula 1), it is assumed to include semiconductors of all compositions in which the composition ratios x, y and z are changed within their respective ranges. Furthermore, in the above chemical formula, those further containing a group V element other than N (nitrogen), those further containing various elements added to control various physical properties such as conductivity type, and unintentionally The “nitride semiconductor” also includes those which further include the various elements contained therein.

  Although some embodiments of the present invention have been described above, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are also included in the scope of the invention described in the claims and the equivalents thereof. Further, the above-described embodiments can be implemented in combination with each other.

  100, 200, 300, 400, 500, 600: semiconductor light emitting device, 10, 70: substrate, 10a, 10b, 10c: wiring, 11, 12, 51: bump, 13, 14: electrode part, 52: conductive part, 15, 18, 61: Reflecting part, 16, 19: Semiconductor layer, 17: Light emitting layer, 91, 93: Chip, 92, 94: Structure, 81, 21, 22: Resin layer, 53: Rectifying part, 54, 55: semiconductor part, 50: semiconductor substrate

Claims (11)

Board,
A first conductive member,
A second conductive member,
A first semiconductor layer of a first conductivity type provided through the first conductive member on said substrate,
Provided via the second conductive member on the substrate, a second semiconductor layer of the second conductivity type located between the substrate and the first semiconductor layer,
A light emitting layer provided between a part of the first semiconductor layer and the second semiconductor layer;
A conductive portion provided on the substrate,
A rectifying portion provided on the conductive portion and connected to the first conductive member and the conductive portion;
Equipped with
The rectifying unit includes a semiconductor unit of a first conductivity type and a semiconductor unit of a second conductivity type,
The semiconductor unit of the second conductivity type is connected to the first conductive member semiconductor section of the first conductivity type is connected to the conductive portion,
The semiconductor light emitting device according to claim 1, wherein an upper surface of the conductive portion is substantially at the same height as a surface of the first conductive member which is connected to the semiconductor portion of the second conductivity type . The first conductive member,
A first electrode portion,
A first reflecting portion provided between the first electrode portion and the first semiconductor layer;
The semiconductor light emitting device according to claim 1, further comprising a. The second conductive member is
A second electrode portion,
A second reflecting portion provided between the second electrode portion and the second semiconductor layer;
The semiconductor light emitting device according to claim 1 or 2 further comprising a. The semiconductor light emitting device according to any one of claims 1 to 3, further comprising a third reflecting part for covering the rectifier. The semiconductor light emitting device according to claim 1, wherein the reflectance of the substrate is higher than the reflectance of the silicon substrate. The first conductive member further includes a first wiring,
  The semiconductor light emitting device according to claim 1, wherein the second conductive member further includes a second wiring. 7. The semiconductor light emitting device according to claim 6, wherein the first wiring and the second wiring are provided on the substrate. The first conductive member further includes a first bump,
  The semiconductor light emitting device according to claim 6, wherein the second conductive member further includes a second bump. The first semiconductor layer is electrically connected to the first wiring via the first bump, and the second semiconductor layer is electrically connected to the second wiring via the second bump. The semiconductor light emitting device according to claim 8. The semiconductor light emitting device according to claim 1, wherein the first conductive member is in contact with a side surface of the first semiconductor layer. The semiconductor light emitting device according to claim 1, wherein the first conductive member has a substantially L shape.

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