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JP6719232B2 - Plated film forming method and liquid jet head manufacturing method - Google Patents
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JP6719232B2 - Plated film forming method and liquid jet head manufacturing method - Google Patents

Plated film forming method and liquid jet head manufacturing method Download PDF

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JP6719232B2
JP6719232B2 JP2016040106A JP2016040106A JP6719232B2 JP 6719232 B2 JP6719232 B2 JP 6719232B2 JP 2016040106 A JP2016040106 A JP 2016040106A JP 2016040106 A JP2016040106 A JP 2016040106A JP 6719232 B2 JP6719232 B2 JP 6719232B2
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piezoelectric substrate
cleaning
groove
electroless plating
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仁 中山
仁 中山
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SII Printek Inc
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Description

本発明は、基板の表面にめっき膜を形成するめっき膜形成方法、及び、圧電体基板の露出面にめっき膜を形成する液体噴射ヘッドの製造方法に関する。 The present invention relates to a plating film forming method for forming a plating film on a surface of a substrate and a method for manufacturing a liquid jet head for forming a plating film on an exposed surface of a piezoelectric substrate.

無電解めっき法により絶縁基板の表面に金属膜を形成する方法は多方面で実用化されている。例えば特許文献1には、プリント基板の表面に無電解めっき法により銅箔を形成する方法が記載されている。スルーホールが形成されるプリント基板を、脱脂槽、脱水槽、触媒付加槽、活性化槽、無電解めっき槽、中和槽に順次浸漬してプリント基板の表面に銅箔を形成する。そして、脱脂槽〜活性化槽ではプリント基板をサイクル1回/2秒の周期で搖動させる。具体的には、縦バーに固定したプリント基板を処理液に浸漬し、搖動器により縦バーを押し引きしてプリント基板を基板面に対して垂直方向に搖動させる。プリント基板を搖動させて各槽の処理時間を短縮させる。また、無電解めっき槽ではプリント基板を数100Hz(好ましくは500Hz)の周期で振動させる。具体的には、プリント基板を縦バーに固定してめっき液に浸漬し、振動発生器により縦バーをプリント基板の板面に対して垂直方向に振動させる。基板を振動させることでスルーホールに残留する気泡を除くことができる、と記載される。 The method of forming a metal film on the surface of an insulating substrate by electroless plating has been put to practical use in many fields. For example, Patent Document 1 describes a method of forming a copper foil on the surface of a printed board by an electroless plating method. The printed board on which the through holes are formed is sequentially dipped in a degreasing tank, a dehydration tank, a catalyst addition tank, an activation tank, an electroless plating tank, and a neutralization tank to form a copper foil on the surface of the printed board. Then, in the degreasing tank to the activation tank, the printed circuit board is oscillated once every cycle/2 seconds. Specifically, the printed circuit board fixed to the vertical bar is immersed in the treatment liquid, and the vertical bar is pushed and pulled by a rocking device to rock the printed circuit board in a direction perpendicular to the substrate surface. Swing the printed circuit board to shorten the processing time of each tank. In the electroless plating bath, the printed circuit board is vibrated at a cycle of several 100 Hz (preferably 500 Hz). Specifically, the printed circuit board is fixed to a vertical bar, immersed in a plating solution, and the vertical bar is vibrated in a direction perpendicular to the plate surface of the printed circuit board by a vibration generator. It is described that the bubbles remaining in the through holes can be removed by vibrating the substrate.

また、特許文献2には、圧電部材を用いる液体噴射ヘッドが記載される。圧電体基板に多数の溝を形成し、この溝の側面及び底面に無電解めっき法により電極を形成してチャンネルを構成する。圧電体基板としてPZT(チタン酸ジルコン酸鉛)セラミックスを使用し、無電解めっき法によりニッケル膜を厚さ1μm〜5μm堆積して溝に電極を形成する。 In addition, Patent Document 2 describes a liquid ejecting head that uses a piezoelectric member. A large number of grooves are formed on a piezoelectric substrate, and electrodes are formed on the side and bottom surfaces of the grooves by electroless plating to form channels. PZT (lead zirconate titanate) ceramics is used as the piezoelectric substrate, and a nickel film is deposited to a thickness of 1 μm to 5 μm by electroless plating to form an electrode in the groove.

また、特許文献3には、圧電部材を用いる液体噴射ヘッドの製造方法が記載される。基板の表面に接着した圧電部材に多数の溝を形成する。具体的には、ダイヤモンドホイール等により圧電部材を厚さ方向に基板に達する深さに切削する。溝幅は80μmであり、溝深さは300μmである。次に、圧電部材と基板の全露出面に無電解めっき法によりニッケル薄膜を形成する。次に、レーザー光を用いてニッケル薄膜のパターニングを行い、各溝の側面及び底面に電極を形成する。 Further, Patent Document 3 describes a method of manufacturing a liquid jet head using a piezoelectric member. A large number of grooves are formed in the piezoelectric member bonded to the surface of the substrate. Specifically, the piezoelectric member is cut by a diamond wheel or the like in the thickness direction to a depth reaching the substrate. The groove width is 80 μm and the groove depth is 300 μm. Next, a nickel thin film is formed on all exposed surfaces of the piezoelectric member and the substrate by electroless plating. Next, the nickel thin film is patterned using laser light to form electrodes on the side and bottom surfaces of each groove.

また、特許文献4には液体噴射ヘッドの製造方法が記載される。圧電体基板の表面に多数の溝を形成し、この溝の側面及び底面に無電解めっき法によりニッケル薄膜からなる電極を形成する。具体的には、溝が形成される圧電体基板を、超音波洗浄、脱脂洗浄、レジスト膜のパターニング、表面の粗面化処理を順次行う。そして、センシタイジング・アクチベーティング処理を繰り返して行って溝の側面及び底面にめっき触媒を付着させ、次に無電解めっき法により溝の側面及び底面に電極を形成する。センシタイジング・アクチベーティング処理の際には水溶液に周波数が20kHz〜100kHzの超音波を加える。これにより、塩化第一錫及び塩化パラジウムを拡散させて金属パラジウムを基板表面に付着させることができる、と記載される。 Further, Patent Document 4 describes a method of manufacturing a liquid jet head. A large number of grooves are formed on the surface of the piezoelectric substrate, and electrodes made of a nickel thin film are formed on the side and bottom surfaces of the grooves by electroless plating. Specifically, the piezoelectric substrate on which the groove is formed is subjected to ultrasonic cleaning, degreasing cleaning, patterning of the resist film, and surface roughening treatment in sequence. Then, the sensitizing and activating process is repeated to deposit the plating catalyst on the side and bottom surfaces of the groove, and then the electrodes are formed on the side and bottom surfaces of the groove by electroless plating. At the time of the sensitizing and activating process, ultrasonic waves having a frequency of 20 kHz to 100 kHz are added to the aqueous solution. This describes that stannous chloride and palladium chloride can be diffused to deposit metallic palladium on the substrate surface.

特許2865637号公報Japanese Patent No. 2865637 特開2002−103630号公報JP, 2002-103630, A 特開2009−202475号公報JP, 2009-202475, A 特開2014−177075号公報JP, 2014-177075, A

無電解めっき法により基板表面にめっき膜を形成する際に、基板表面に異物や気泡が付着する、或いは基板表面自体が欠けやすい場合には、めっき膜に欠けやピンホールが発生し、めっき膜の膜品質を低下させる原因となる。また、基板表面に凹凸や穴が存在し、その凹凸や穴の側面や底面に無電解めっき法によりめっき膜を形成する場合がある。例えば、特許文献1では、基板にスルーホールを形成し、このスルーホールの内側面にめっき膜を形成する。基板表面に凹凸やスルーホールが存在すると、その凹部やスルーホールに気泡が付着しやすい。気泡が付着する状態でめっき処理を施すと、気泡箇所がめっき膜の欠けとなってめっき膜の品質を低下させる原因となる。特許文献1では、洗浄槽において基板を基板面に対して垂直方向に周期0.5Hzで搖動させ、めっき槽では基板を基板面に対して垂直方向に数100Hzで搖動させて、スルーホールに残留する気泡を除去する。しかし、基板表面に貫通しない凹部が形成される場合には、特許文献1の搖動方法では凹部内の溶液に対流や振動が十分に伝達されず、凹部内の気泡や異物を除去することができない、或いはめっき膜の膜厚が不均一となる。 When a plating film is formed on the surface of the substrate by electroless plating, if foreign matter or bubbles adhere to the surface of the substrate or if the surface of the substrate is prone to chipping, chipping or pinholes will occur in the plating film Cause deterioration of the film quality. In addition, there are cases where unevenness or holes are present on the surface of the substrate, and a plating film is formed on the side surface or the bottom surface of the unevenness or holes by electroless plating. For example, in Patent Document 1, a through hole is formed in a substrate, and a plating film is formed on the inner side surface of this through hole. If unevenness or through holes exist on the surface of the substrate, bubbles are likely to adhere to the recesses or through holes. If the plating process is performed in a state where air bubbles are attached, the air bubble locations cause a chipping of the plating film, which causes deterioration of the quality of the plating film. In Patent Document 1, the substrate is swung in the cleaning tank in the direction perpendicular to the substrate surface at a cycle of 0.5 Hz, and in the plating tank, the substrate is swung in the direction perpendicular to the substrate surface at several 100 Hz, and remains in the through hole. Remove bubbles. However, when a recess that does not penetrate the substrate surface is formed, the swinging method of Patent Document 1 does not sufficiently transfer convection and vibration to the solution in the recess, and it is not possible to remove bubbles and foreign matter in the recess. Alternatively, the film thickness of the plating film becomes uneven.

また、特許文献2〜4では、開口部の開口幅よりも深さの深い溝が形成される圧電体基板の表面に無電解めっき法によりめっき膜を形成する。この場合も特許文献1と同様に、溝に付着する気泡や異物を除去してからめっき膜を形成する必要がある。例えば特許文献4では、表面に付着する異物や気泡を除去するために周波数20kHz〜100kHzの超音波を洗浄液に加えながら圧電体基板を洗浄し、或いはめっき触媒を付着させる。しかし、使用する圧電体材料はPZTセラミックスであり、結晶粒から成る。切削加工法により溝を形成すると、溝の表面に微細な異物が残留しやすく、超音波洗浄では付着した異物を完全に除去するのが難しい。また、溝の表面をエッチング処理すると、表面に現れる結晶粒界が侵食されて結晶粒間の結合力が低下する。このような表面に超音波を加えると、超音波が圧電体基板に強く作用して表面から結晶粒が脱落することがある。また、基板表面に付着しためっき触媒に超音波を加えると、めっき触媒が部分的に剥離してめっき膜の膜厚が不均一となる。 Further, in Patent Documents 2 to 4, a plating film is formed by electroless plating on the surface of the piezoelectric substrate in which a groove having a depth deeper than the opening width of the opening is formed. Also in this case, as in Patent Document 1, it is necessary to remove bubbles and foreign matter adhering to the groove before forming the plating film. For example, in Patent Document 4, the piezoelectric substrate is cleaned or ultrasonic waves having a frequency of 20 kHz to 100 kHz are applied to the cleaning liquid to remove foreign matter or bubbles adhering to the surface, or a plating catalyst is applied. However, the piezoelectric material used is PZT ceramics and is composed of crystal grains. When the groove is formed by the cutting method, fine foreign matter is likely to remain on the surface of the groove, and it is difficult to completely remove the adhered foreign matter by ultrasonic cleaning. Further, when the surface of the groove is subjected to etching treatment, the crystal grain boundaries appearing on the surface are eroded and the bonding force between the crystal grains is reduced. When ultrasonic waves are applied to such a surface, the ultrasonic waves may act strongly on the piezoelectric substrate and crystal grains may drop off from the surface. Further, when ultrasonic waves are applied to the plating catalyst attached to the surface of the substrate, the plating catalyst is partly peeled off and the thickness of the plating film becomes uneven.

本発明のめっき膜形成方法は、基板を洗浄液に浸漬して洗浄する洗浄工程と、前記基板を無電解めっき液に浸漬し前記基板を周波数が10Hz〜200Hz(但し、10〜60Hz及び100〜200Hzを除く)の低周波で前記基板の露出面と平行方向に振動させて前記基板の露出面にめっき膜を形成する無電解めっき工程と、を備えることとした。 The plating film forming method of the present invention includes a cleaning step of immersing a substrate in a cleaning solution and cleaning, and a frequency of 10 Hz to 200 Hz (however, 10 to 60 Hz and 100 to 200 Hz) in which the substrate is immersed in an electroless plating solution. (Excluding the above), the electroless plating step of vibrating in a direction parallel to the exposed surface of the substrate at a low frequency to form a plating film on the exposed surface of the substrate.

また、前記洗浄工程は、前記基板を前記洗浄液に浸漬し前記基板を周波数が20Hz〜400Hzの低周波で振動させて洗浄する工程であることとした。 The cleaning step is a step of cleaning the substrate by immersing the substrate in the cleaning liquid and vibrating the substrate at a low frequency of 20 Hz to 400 Hz.

本発明の液体噴射ヘッドの製造方法は、圧電体基板に複数の溝を並列に形成する溝形成工程と、前記圧電体基板を洗浄液に浸漬し前記圧電体基板を洗浄する洗浄工程と、前記圧電体基板を無電解めっき液に浸漬し前記圧電体基板を周波数が10Hz〜200Hz(但し、10〜60Hz及び100〜200Hzを除く)の低周波で前記基板の露出面と平行方向に振動させて前記圧電体基板の露出面にめっき膜を形成する無電解めっき工程と、を備えることとした。 A liquid jet head manufacturing method according to the present invention includes a groove forming step of forming a plurality of grooves in parallel on a piezoelectric substrate, a cleaning step of immersing the piezoelectric substrate in a cleaning liquid to clean the piezoelectric substrate, and the piezoelectric element. The body substrate is immersed in an electroless plating solution and the piezoelectric substrate is vibrated in a direction parallel to the exposed surface of the substrate at a low frequency of 10 Hz to 200 Hz (excluding 10 to 60 Hz and 100 to 200 Hz). And an electroless plating step of forming a plating film on the exposed surface of the piezoelectric substrate.

また、前記洗浄工程は、前記圧電体基板を前記洗浄液に浸漬し前記圧電体基板を周波数が20Hz〜400Hzの低周波で振動させて洗浄する工程であることとした。 The cleaning step is a step of immersing the piezoelectric substrate in the cleaning liquid and vibrating the piezoelectric substrate at a low frequency of 20 Hz to 400 Hz for cleaning.

また、前記無電解めっき工程は前記圧電体基板を前記溝の長手方向に振動させて前記めっき膜を形成する工程を含むこととした。 In addition, the electroless plating step includes a step of vibrating the piezoelectric substrate in the longitudinal direction of the groove to form the plating film.

また、前記洗浄工程は前記圧電体基板を前記溝の長手方向に振動させて洗浄する工程であることとした。 The cleaning step is a step of cleaning the piezoelectric substrate by vibrating it in the longitudinal direction of the groove.

また、前記圧電体基板の露出面を前記洗浄工程により洗浄する第一洗浄工程と、前記圧電体基板の露出面をエッチングするエッチング工程と、前記圧電体基板の露出面を前記洗浄工程により洗浄する第二洗浄工程と、前記無電解めっき工程の前に前記圧電体基板の露出面にめっき触媒を付着させる触媒付着工程と、を備えることとした。 Also, a first cleaning step of cleaning the exposed surface of the piezoelectric substrate by the cleaning step, an etching step of etching the exposed surface of the piezoelectric substrate, and an exposed surface of the piezoelectric substrate by the cleaning step. A second cleaning step and a catalyst adhering step of adhering a plating catalyst to the exposed surface of the piezoelectric substrate before the electroless plating step are provided.

また、前記溝形成工程の前に前記圧電体基板の表面に感光性樹脂層を設置する感光性樹脂層形成工程と、前記無電解めっき工程の後に前記感光性樹脂層を除去する感光性樹脂層除去工程と、を更に含むこととした。 Further, a photosensitive resin layer forming step of setting a photosensitive resin layer on the surface of the piezoelectric substrate before the groove forming step, and a photosensitive resin layer of removing the photosensitive resin layer after the electroless plating step. And a removal step.

本発明によるめっき膜形成方法は、基板を洗浄液に浸漬し基板を洗浄する洗浄工程と、基板を無電解めっき液に浸漬し基板を周波数が10Hz〜200Hz(但し、10〜60Hz及び100〜200Hzを除く)の低周波で前記基板の露出面と平行方向に振動させて基板の露出面にめっき膜を形成する無電解めっき工程と、を備える。これにより、基板面に金属イオンが新たに供給されてめっき膜をむらなく形成することができる。 The plating film forming method according to the present invention includes a cleaning step of immersing a substrate in a cleaning liquid and cleaning the substrate, and immersing the substrate in an electroless plating liquid to make the substrate have a frequency of 10 Hz to 200 Hz (provided that 10 to 60 Hz and 100 to 200 Hz are used. (Excluding), the electroless plating step of vibrating in a direction parallel to the exposed surface of the substrate at a low frequency to form a plating film on the exposed surface of the substrate. As a result, metal ions are newly supplied to the surface of the substrate and the plated film can be formed evenly.

本発明の第一実施形態に係るめっき膜形成方法の工程図である。It is a flowchart of a plating film forming method concerning a first embodiment of the present invention. 本発明の第一実施形態に係るめっき膜形成方法の無電解めっき工程を説明するための図である。It is a figure for demonstrating the electroless-plating process of the plating film forming method which concerns on 1st embodiment of this invention. 本発明の第二実施形態に係る液体噴射ヘッドの製造方法の工程図である。FIG. 6 is a process drawing of the method of manufacturing the liquid jet head according to the second embodiment of the present invention. 本発明の第二実施形態に係る液体噴射ヘッドの製造方法を説明するための図である。FIG. 8 is a diagram for explaining a manufacturing method for the liquid jet head according to the second embodiment of the present invention. 本発明の第三実施形態に係る液体噴射ヘッドの製造方法の工程図である。FIG. 9 is a process diagram of a method for manufacturing a liquid jet head according to a third embodiment of the present invention. 本発明の第三実施形態に係る液体噴射ヘッドの製造方法における各工程を説明するための図である。FIG. 6 is a diagram for explaining each step in the method of manufacturing the liquid jet head according to the third embodiment of the present invention. 本発明の第三実施形態に係る液体噴射ヘッドの製造方法における各工程を説明するための図である。FIG. 6 is a diagram for explaining each step in the method of manufacturing the liquid jet head according to the third embodiment of the present invention. 本発明の第三実施形態に係る液体噴射ヘッドの製造方法における各工程を説明するための図である。FIG. 6 is a diagram for explaining each step in the method of manufacturing the liquid jet head according to the third embodiment of the present invention.

(第一実施形態)
図1は本発明の第一実施形態に係るめっき膜形成方法の工程図である。図2は本発明の第一実施形態に係る無電解めっき工程を説明するための図である。図1に示すように、本発明のめっき膜形成方法は、基板1を洗浄する洗浄工程Sxと、基板1の基板面S(露出面、以下同じ)にめっき膜を形成する無電解めっき工程Syとを備える。洗浄工程Sxでは、基板1を洗浄液2に浸漬して洗浄する。無電解めっき工程Syでは、基板1を無電解めっき液3に浸漬し基板1を周波数が10Hz〜200Hzの第一の低周波f1で振動させて基板1の基板面Sにめっき膜を形成する。これにより、無電解めっき液3の金属イオンが消費される基板面Sに金属イオンが新たに供給されて、基板面Sにめっき膜をむらなく形成することができる。
(First embodiment)
FIG. 1 is a process diagram of a plating film forming method according to the first embodiment of the present invention. FIG. 2 is a diagram for explaining the electroless plating process according to the first embodiment of the present invention. As shown in FIG. 1, the plating film forming method of the present invention includes a cleaning step Sx for cleaning the substrate 1 and an electroless plating step Sy for forming a plating film on the substrate surface S (exposed surface, the same hereinafter) of the substrate 1. With. In the cleaning step Sx, the substrate 1 is immersed in the cleaning liquid 2 for cleaning. In the electroless plating step Sy, the substrate 1 is immersed in the electroless plating solution 3 and the substrate 1 is vibrated at a first low frequency f1 having a frequency of 10 Hz to 200 Hz to form a plating film on the substrate surface S of the substrate 1. Thereby, the metal ions are newly supplied to the substrate surface S where the metal ions of the electroless plating solution 3 are consumed, and the plating film can be formed evenly on the substrate surface S.

具体的に説明する。図2は基板1の基板面Sにめっき膜を形成する様子を表す模式図であり、図2(a)が基板1を正面から見る(基板面Sの法線方向から見る)正面模式図であり、図2(b)は基板1を側面から見る(基板1を基板面方向から見る)側面模式図である。まず、洗浄工程Sxにおいて、基板面Sを洗浄液に浸漬して洗浄する。次に、無電解めっき工程Syにおいて、複数の基板1を籠状であり6面が開口する基板ホルダーHに固定し、基板ホルダーHに連結する支持アームNの端部を振動発生器Mに接続する。めっき槽Bbに無電解めっき液3を満たし、基板面Sを矢印で示す上下方向に向けて基板1を無電解めっき液3に浸漬する。そして、振動発生器Mを駆動して支持アームNを上下方向に周波数Fが10Hz〜200Hzの第一の低周波f1で0.1mm〜5mmのストロークで振動させる。従って、基板1は無電解めっき液3の中で10Hz〜200Hzの第一の低周波f1で上下方向であり基板1の基板面Sと平行方向に振動する。その結果、無電解めっき液3の金属イオンが消費される基板面Sに金属イオンが新たに供給されて、基板面Sにめっき膜をむらなく形成することができる。なお、基板1に第一の低周波f1の振動を加える際に、無電解めっきを開始してから所定時間の経過後、例えば1分〜5分経過後に振動発生器Mを駆動して基板1を振動させるのが好ましい。無電解めっきの開始直後に振動を加えると、基板面Sに付着するめっき触媒が基板面Sから脱落し、めっき膜の膜厚にむらが生ずることがある。 This will be specifically described. FIG. 2 is a schematic diagram showing a state of forming a plating film on the substrate surface S of the substrate 1, and FIG. 2A is a schematic front view of the substrate 1 viewed from the front (viewed from the normal direction of the substrate surface S). 2B is a schematic side view of the substrate 1 viewed from the side (the substrate 1 viewed from the substrate surface direction). First, in the cleaning step Sx, the substrate surface S is immersed in a cleaning liquid for cleaning. Next, in the electroless plating step Sy, a plurality of substrates 1 are fixed to a substrate holder H having a basket shape and six sides open, and an end of a support arm N connected to the substrate holder H is connected to a vibration generator M. To do. The plating bath Bb is filled with the electroless plating solution 3, and the substrate 1 is immersed in the electroless plating solution 3 with the substrate surface S oriented in the vertical direction indicated by the arrow. Then, the vibration generator M is driven to vibrate the support arm N in the vertical direction at a stroke of 0.1 mm to 5 mm at a first low frequency f1 having a frequency F of 10 Hz to 200 Hz. Therefore, the substrate 1 vibrates in the electroless plating solution 3 in the vertical direction at the first low frequency f1 of 10 Hz to 200 Hz and in the direction parallel to the substrate surface S of the substrate 1. As a result, the metal ions are newly supplied to the substrate surface S where the metal ions of the electroless plating solution 3 are consumed, and the plating film can be formed evenly on the substrate surface S. When applying the first low-frequency f1 vibration to the substrate 1, the vibration generator M is driven to drive the vibration generator M after a lapse of a predetermined time from the start of the electroless plating, for example, 1 to 5 minutes. Is preferably vibrated. If vibration is applied immediately after the start of electroless plating, the plating catalyst adhering to the substrate surface S may drop off from the substrate surface S, causing unevenness in the thickness of the plated film.

ここで、基板1は導体、圧電体、絶縁体、合成樹脂等を使用することができる。洗浄液2は純水、有機溶媒、界面活性剤を含む脱脂洗浄液等を使用することができる。無電解めっき液3はNi、Au、Ag等を析出するめっき液を使用することができる。 Here, for the substrate 1, a conductor, a piezoelectric body, an insulator, a synthetic resin, or the like can be used. As the cleaning liquid 2, pure water, an organic solvent, a degreasing cleaning liquid containing a surfactant, or the like can be used. As the electroless plating solution 3, a plating solution that deposits Ni, Au, Ag, or the like can be used.

本発明のめっき膜形成方法では、基板1を洗浄液2に浸漬して基板1に振動を加えることが必須要件ではないが、洗浄工程Sxにおいても、図2に示す装置を使用することができる。即ち、複数の基板1を基板ホルダーHに固定し、基板ホルダーHに連結する支持アームNの端部を振動発生器Mに接続する。洗浄槽Baに洗浄液2を充填し、基板面Sを矢印で示す上下方向に向けて基板1を洗浄液2に浸漬する。そして、振動発生器Mを駆動して支持アームNを上下方向に周波数Fが20Hz〜400Hzの第二の低周波f2で0.1mm〜5mmのストロークで振動させる。従って、基板1は洗浄液2の中で20Hz〜400Hzの第二の低周波f2で上下方向であり基板1の基板面Sと平行方向に振動する。その結果、洗浄工程Sxにより基板1の基板面Sから微細な異物や気泡を除去することができ、無電解めっき工程Syにより形成するめっき膜4の品質が向上する。即ち、ピンホールの無いめっき膜をむらなく簡便に形成することができる。 In the plating film forming method of the present invention, it is not essential to immerse the substrate 1 in the cleaning liquid 2 and apply vibration to the substrate 1, but the apparatus shown in FIG. 2 can be used also in the cleaning step Sx. That is, the plurality of substrates 1 are fixed to the substrate holder H, and the ends of the support arms N connected to the substrate holder H are connected to the vibration generator M. The cleaning bath Ba is filled with the cleaning liquid 2, and the substrate 1 is immersed in the cleaning liquid 2 with the substrate surface S oriented in the vertical direction indicated by the arrow. Then, the vibration generator M is driven to vibrate the support arm N in the vertical direction at a second low frequency f2 having a frequency F of 20 Hz to 400 Hz with a stroke of 0.1 mm to 5 mm. Therefore, the substrate 1 vibrates in the cleaning liquid 2 at the second low frequency f2 of 20 Hz to 400 Hz in the vertical direction and in the direction parallel to the substrate surface S of the substrate 1. As a result, fine foreign matter and bubbles can be removed from the substrate surface S of the substrate 1 by the cleaning step Sx, and the quality of the plated film 4 formed by the electroless plating step Sy is improved. That is, a plated film having no pinhole can be formed easily and evenly.

第二の低周波f2は、基板1の表面に付着する異物や気泡の大きさに応じて変化させる。本発明者は実験により、洗浄しようとする対象物の径と基板1に与える振動の周波数とは反比例の関係を有し、周波数をF(Hz)、洗浄対象物の径をR(m)として、概ね次式(1)の関係を有することを見出した。ここでkは定数である。
F=k×10-4/R・・・(1)
つまり、洗浄対象物の径Rが大きいほど第二の低周波f2の周波数Fを小さくし、洗浄対象物の径Rが小さいほど第二の低周波f2の周波数Fを大きくするほうが、洗浄効率が良い。洗浄対象物の径が分散している場合は、基板1に与える振動の周波数Fも20Hz〜400Hzの範囲内で変化させるのがよい。言い換えると、第二の低周波f2である特定の周波数Fにより振動させることで、特定径Rの対象物を基板面Sから選択的に除去し、他の径R’の対象物を基板面Sに残すことができる。
The second low frequency f2 is changed according to the size of foreign matter or bubbles adhering to the surface of the substrate 1. The present inventor has conducted an experiment to find that the diameter of an object to be cleaned and the frequency of vibration applied to the substrate 1 are inversely proportional to each other, and the frequency is F (Hz) and the diameter of the cleaning object is R (m). It has been found that there is a relationship of the following formula (1). Here, k is a constant.
F=k×10 −4 /R (1)
That is, as the diameter R of the object to be cleaned is increased, the frequency F of the second low frequency f2 is decreased, and as the diameter R of the object to be cleaned is increased, the frequency F of the second low frequency f2 is increased. good. When the diameters of the objects to be cleaned are dispersed, the frequency F of vibration applied to the substrate 1 should also be changed within the range of 20 Hz to 400 Hz. In other words, by vibrating at the specific frequency F which is the second low frequency f2, the object having the specific diameter R is selectively removed from the substrate surface S, and the object having the other diameter R′ is removed. Can be left on.

本発明のめっき膜形成方法によれば、基板1の基板面Sに凹部、例えば多数の凹凸や溝が存在する場合でも、凹凸や溝に金属イオンが回り込みやすくなるので、凹部の側面や底面にめっき膜を析出させることができる。本第一実施形態では、基板1の振動方向が基板面Sに平行方向に振動させているが、本発明はこれに限定されず、基板1の振動方向を基板面Sに垂直方向に振動させてもよい。例えば、基板1に貫通孔が形成され、この貫通孔の側面に無電解めっきによりめっき膜を形成しようとする場合には、洗浄工程Sx及び無電解めっき工程Syにおいて、基板1の振動方向を基板面Sに垂直方向とする。これにより、洗浄工程Sxにおいては、貫通孔の側面に付着する異物や気泡を除去することができ、無電解めっき工程Syにおいては、貫通孔に新たな無電解めっき液3を供給することができる。また、基板1に細長い溝が形成される場合には、基板1の振動方向を基板面Sの溝の長手方向と平行な方向に振動させる。これにより、洗浄工程Sxにおいては溝の内側面や底面に付着する異物や気泡を除去することができ、無電解めっき工程Syにおいては溝の底部に新しい無電解めっき液3を供給することができる。 According to the method for forming a plating film of the present invention, even when a concave portion, for example, a large number of concaves and convexes or grooves are present on the substrate surface S of the substrate 1, metal ions are easily entangled in the concaves and convexes. A plated film can be deposited. In the first embodiment, the vibration direction of the substrate 1 is vibrated in the direction parallel to the substrate surface S, but the present invention is not limited to this, and the vibration direction of the substrate 1 is vibrated in the direction perpendicular to the substrate surface S. May be. For example, when a through-hole is formed in the substrate 1 and a plating film is to be formed on the side surface of the through-hole by electroless plating, the vibration direction of the substrate 1 is changed in the cleaning step Sx and the electroless plating step Sy. The direction is perpendicular to the surface S. Thus, in the cleaning step Sx, foreign matters and bubbles adhering to the side surface of the through hole can be removed, and in the electroless plating step Sy, a new electroless plating solution 3 can be supplied to the through hole. .. Further, when the elongated groove is formed on the substrate 1, the vibrating direction of the substrate 1 is vibrated in a direction parallel to the longitudinal direction of the groove on the substrate surface S. Thereby, in the cleaning step Sx, foreign matters and bubbles adhering to the inner side surface and the bottom surface of the groove can be removed, and new electroless plating solution 3 can be supplied to the bottom portion of the groove in the electroless plating step Sy. ..

(第二実施形態)
図3は本発明の第二実施形態に係る液体噴射ヘッドの製造方法の工程図である。図4は本発明の第二実施形態に係る液体噴射ヘッドの製造方法を説明するための図である。図4(a)は溝形成工程Smの後の圧電体基板1aの断面模式図である。図4(b)は洗浄工程Sx及び無電解めっき工程Syを説明するための図である。図4(c)は無電解めっき工程Syの後の圧電体基板1aの断面模式図である。図4(d)はヘッド組立工程Szの後の液体噴射ヘッド10の断面模式図である。同一の部分又は同一の機能を有する部分には同一の符号を付している。
(Second embodiment)
FIG. 3 is a process drawing of the method for manufacturing a liquid jet head according to the second embodiment of the present invention. FIG. 4 is a diagram for explaining a method of manufacturing the liquid jet head according to the second embodiment of the present invention. FIG. 4A is a schematic sectional view of the piezoelectric substrate 1a after the groove forming step Sm. FIG. 4B is a diagram for explaining the cleaning step Sx and the electroless plating step Sy. FIG. 4C is a schematic sectional view of the piezoelectric substrate 1a after the electroless plating step Sy. FIG. 4D is a schematic sectional view of the liquid jet head 10 after the head assembly step Sz. The same portions or portions having the same function are designated by the same reference numerals.

図3に示すように、本発明の液体噴射ヘッドの製造方法は、圧電体基板1aに複数の溝5を並列に形成する溝形成工程Smと、圧電体基板1aを洗浄する洗浄工程Sxと、圧電体基板1aの露出面Ep(基板面Sと溝5の内表面)にめっき膜4を形成する無電解めっき工程Syと、この圧電体基板1aを用いて液体噴射ヘッド10に組み立てるヘッド組立工程Szとを備える。以下、図4を用いて具体的に説明する。 As shown in FIG. 3, in the liquid jet head manufacturing method of the present invention, a groove forming step Sm of forming a plurality of grooves 5 in parallel on the piezoelectric substrate 1a, a cleaning step Sx of cleaning the piezoelectric substrate 1a, An electroless plating step Sy of forming a plating film 4 on the exposed surface Ep of the piezoelectric substrate 1a (the substrate surface S and the inner surface of the groove 5), and a head assembly step of assembling the liquid jet head 10 using this piezoelectric substrate 1a. Sz and. Hereinafter, a specific description will be given with reference to FIG.

図4(a)は、圧電体基板1aの溝5の長手方向に直交する方向の断面模式図である。溝形成工程Smにおいて、圧電体基板1aに複数の溝5を並列に形成する。圧電体基板1aは基板面Sの法線方向に分極処理が施される。圧電体基板1aを一方の基板面Sの側からダイシングブレードやダイヤモンドホイールを用いて研削して所定の深さの複数の溝5を形成する。圧電体基板1aとしてPZTセラミックスを使用することができる。溝5の深さは300μm〜400μmであり、溝5の長さは1mm〜数mmであり、溝5の幅は数10μm〜100μmであり、溝5と溝5の間の側壁9の幅(厚さ)は数10μm〜100μmである。溝5は平行に数100本以上形成する。なお、圧電体基板1aは、溝5と溝5の間の側壁9のみに圧電体基板を使用し、側壁9を保持する下部材料として絶縁体基板を使用してもよい。 FIG. 4A is a schematic sectional view in a direction orthogonal to the longitudinal direction of the groove 5 of the piezoelectric substrate 1a. In the groove forming step Sm, a plurality of grooves 5 are formed in parallel on the piezoelectric substrate 1a. The piezoelectric substrate 1a is polarized in the direction normal to the substrate surface S. The piezoelectric substrate 1a is ground from one substrate surface S side using a dicing blade or a diamond wheel to form a plurality of grooves 5 having a predetermined depth. PZT ceramics can be used as the piezoelectric substrate 1a. The depth of the groove 5 is 300 μm to 400 μm, the length of the groove 5 is 1 mm to several mm, the width of the groove 5 is several 10 μm to 100 μm, and the width of the side wall 9 between the grooves 5 ( The thickness) is several 10 μm to 100 μm. Several hundred or more grooves 5 are formed in parallel. In the piezoelectric substrate 1a, the piezoelectric substrate may be used only for the side walls 9 between the grooves 5 and the insulating substrate may be used as a lower material for holding the side walls 9.

図4(b)は洗浄工程Sxにおいて圧電体基板1aを洗浄する様子を示し、左図が圧電体基板1aの基板面Sを正面から見る(基板面Sの垂直方向から見る)模式図であり、右図が圧電体基板1aを側面から見る(基板面Sの平行方向から見る)模式図である。洗浄工程Sxにおいて、圧電体基板1aを洗浄液2に浸漬し圧電体基板1aを周波数が20Hz〜400Hzの第二の低周波f2で振動させて洗浄する。具体的には、図4(b)に示すように、複数の圧電体基板1aを基板ホルダーHに固定する。基板ホルダーHは、鋸歯状の凹凸を有する上保持部Haと下保持部Hbを備える。上下保持部Ha、Hbの対向する凹部間に複数の圧電体基板1aを並列に挟んで固定する。基板ホルダーHには支持アームNが連結し、支持アームNの反対側の端部が振動発生器Mに接続する。洗浄槽Baを洗浄液2で満たし、基板面Sを矢印で示す上下方向に向けて圧電体基板1aを洗浄液2に浸漬する。 FIG. 4B shows how the piezoelectric substrate 1a is cleaned in the cleaning step Sx, and the left view is a schematic view of the substrate surface S of the piezoelectric substrate 1a viewed from the front (viewed from the direction perpendicular to the substrate surface S). The right diagram is a schematic view of the piezoelectric substrate 1a viewed from the side (viewed from the direction parallel to the substrate surface S). In the cleaning step Sx, the piezoelectric substrate 1a is immersed in the cleaning liquid 2 to vibrate the piezoelectric substrate 1a at a second low frequency f2 having a frequency of 20 Hz to 400 Hz for cleaning. Specifically, as shown in FIG. 4B, the plurality of piezoelectric substrates 1a are fixed to the substrate holder H. The substrate holder H includes an upper holding portion Ha and a lower holding portion Hb having saw-tooth-shaped irregularities. A plurality of piezoelectric substrates 1a are sandwiched in parallel and fixed between the concave portions of the upper and lower holding portions Ha and Hb facing each other. The support arm N is connected to the substrate holder H, and the opposite end of the support arm N is connected to the vibration generator M. The cleaning bath Ba is filled with the cleaning liquid 2, and the piezoelectric substrate 1a is dipped in the cleaning liquid 2 with the substrate surface S oriented in the vertical direction indicated by the arrow.

本実施形態では圧電体基板1aの溝5の長手方向を振動方向である上下方向に向けているが、本発明はこの配置に限定されない。しかし、溝5の長手方向と振動方向とを一致させることにより、溝5の内部に洗浄液2の振動が伝達され、内表面(露出面)に付着する異物を効果的に除去することができる。従って、基板ホルダーHは溝5の長手方向を振動方向に向けて複数の圧電体基板1aを装着し固定するのがよい。 In the present embodiment, the longitudinal direction of the groove 5 of the piezoelectric substrate 1a is directed in the vertical direction which is the vibration direction, but the present invention is not limited to this arrangement. However, by making the longitudinal direction of the groove 5 coincide with the vibration direction, the vibration of the cleaning liquid 2 is transmitted to the inside of the groove 5, and the foreign matter attached to the inner surface (exposed surface) can be effectively removed. Therefore, it is preferable that the substrate holder H mounts and fixes a plurality of piezoelectric substrates 1a with the longitudinal direction of the groove 5 oriented in the vibration direction.

そして、振動発生器Mは支持アームNを上下方向に振動させる。支持アームNは周波数Fが20Hz〜400Hzの第二の低周波f2で0.1mm〜5mmのストロークで振動する。従って、圧電体基板1aは洗浄液2の中で周波数Fが20Hz〜400Hzの第二の低周波f2で0.1mm〜5mmのストロークで上下方向に振動する。洗浄液2は純水、有機溶媒、界面活性剤を含む脱脂洗浄液等を使用することができる。その結果、溝5の側面や底面に付着する異物、例えば溝形成工程Smにおいて発生する研削粉や気泡を除去することができる。第二の低周波f2は圧電体基板1aの基板面Sに付着する異物や気泡の大きさに応じて変化させるのがよい。すでに説明したように、周波数Fと洗浄対象物の径Rとの間には、概ね式(1)の関係があるので、洗浄対象物の径Rが大きいほど第二の低周波f2の周波数Fを小さくし、洗浄対象物の径Rが小さいほど第二の低周波f2の周波数Fを大きくするのがよい。また、特定の周波数Fである第二の低周波f2により圧電体基板1aを振動させるので、他のサイズの粒子、例えばPZTセラミックスの結晶粒を脱落させる、或いは、側壁9にクラックを生じさせることが無い。 Then, the vibration generator M vibrates the support arm N in the vertical direction. The support arm N vibrates at a stroke of 0.1 mm to 5 mm at a second low frequency f2 having a frequency F of 20 Hz to 400 Hz. Therefore, the piezoelectric substrate 1a vibrates vertically in the cleaning liquid 2 with a stroke of 0.1 mm to 5 mm at the second low frequency f2 having a frequency F of 20 Hz to 400 Hz. As the cleaning liquid 2, pure water, an organic solvent, a degreasing cleaning liquid containing a surfactant, or the like can be used. As a result, it is possible to remove foreign matter adhering to the side surface and the bottom surface of the groove 5, for example, grinding powder and bubbles generated in the groove forming step Sm. The second low frequency f2 is preferably changed according to the size of foreign matter or bubbles adhering to the substrate surface S of the piezoelectric substrate 1a. As described above, the frequency F and the diameter R of the object to be cleaned have a relationship of approximately the formula (1). Therefore, the larger the diameter R of the object to be cleaned, the frequency F of the second low frequency f2. And the frequency F of the second low frequency f2 should be increased as the diameter R of the object to be cleaned decreases. Further, since the piezoelectric substrate 1a is vibrated by the second low frequency f2 which is the specific frequency F, particles of other sizes, for example, crystal grains of PZT ceramics are dropped or cracks are generated on the side wall 9. There is no.

なお、図4(b)に示す装置構成は本発明の一例である。例えば、基板ホルダーHが圧電体基板1aを基板面Sが水平となるように保持し、振動発生器Mが支持アームNを介して基板ホルダーHを水平方向に振動させる装置構成であってもよい。この場合、溝5の長手方向が圧電体基板1aの振動方向となるように基板ホルダーHを振動させる。 The device configuration shown in FIG. 4B is an example of the present invention. For example, the substrate holder H may hold the piezoelectric substrate 1a so that the substrate surface S is horizontal, and the vibration generator M may vibrate the substrate holder H horizontally via the support arm N. .. In this case, the substrate holder H is vibrated so that the longitudinal direction of the groove 5 is the vibrating direction of the piezoelectric substrate 1a.

次に、無電解めっき工程Syにおいて、圧電体基板1aを無電解めっき液3に浸漬し圧電体基板1aの露出面Epにめっき膜4を形成する。無電解めっき工程Syは、図4(b)に示す装置を使用することができる。基板ホルダーHは複数の圧電体基板1aを固定する。具体的に、基板ホルダーHは上保持部Haと下保持部Hbの対向する凹部間に複数の圧電体基板1aを上下方向に向けて並列に挟んで固定する。基板ホルダーHには支持アームNが連結し、支持アームNの反対側の端部が振動発生器Mに接続する。めっき槽Bbを無電解めっき液3で満たし、溝5の長手方向を矢印で示す上下方向に向けて圧電体基板1aを無電解めっき液3に浸漬する。本発明においては、溝5の長手方向を圧電体基板1aの振動方向に向けることは必須要件ではないが、溝5の長手方向を圧電体基板1aの振動方向に向けることにより、無電解めっき液3の振動を溝5の内部に伝達しやすくなる。 Next, in the electroless plating step Sy, the piezoelectric substrate 1a is immersed in the electroless plating solution 3 to form the plating film 4 on the exposed surface Ep of the piezoelectric substrate 1a. The apparatus shown in FIG. 4B can be used in the electroless plating step Sy. The substrate holder H fixes a plurality of piezoelectric substrates 1a. Specifically, the substrate holder H is fixed by sandwiching a plurality of piezoelectric substrates 1a in parallel in the vertical direction between the concave portions of the upper holding portion Ha and the lower holding portion Hb facing each other. The support arm N is connected to the substrate holder H, and the opposite end of the support arm N is connected to the vibration generator M. The plating bath Bb is filled with the electroless plating solution 3, and the piezoelectric substrate 1 a is dipped in the electroless plating solution 3 with the longitudinal direction of the groove 5 oriented in the vertical direction indicated by the arrow. In the present invention, it is not essential to orient the longitudinal direction of the groove 5 in the vibration direction of the piezoelectric substrate 1a, but by orienting the longitudinal direction of the groove 5 in the vibration direction of the piezoelectric substrate 1a, the electroless plating solution The vibration of 3 can be easily transmitted to the inside of the groove 5.

そして、振動発生器Mを駆動して支持アームNを上下方向に振動させて、複数の圧電体基板1aを溝5の長手方向に振動させる。振動発生器Mが支持アームNを周波数Fが10Hz〜200Hzの第一の低周波f1で振動させれば、複数の圧電体基板1aも周波数Fが10Hz〜200Hzの第一の低周波f1で振動する。この場合も、圧電体基板1aは上下方向に0.1mm〜5mmのストロークで振動する。これにより、溝5の内部に新しい無電解めっき液3が供給され、めっき膜4の膜厚むらが抑制される。また、めっき膜4の析出に伴ってガスが発生するが、このガスが気泡となって溝5の開口部を塞ぐことを防止することができる。 Then, the vibration generator M is driven to vibrate the support arm N in the vertical direction to vibrate the plurality of piezoelectric substrate 1a in the longitudinal direction of the groove 5. If the vibration generator M vibrates the support arm N at the first low frequency f1 having the frequency F of 10 Hz to 200 Hz, the plurality of piezoelectric substrate 1a also vibrates at the first low frequency f1 having the frequency F of 10 Hz to 200 Hz. To do. Also in this case, the piezoelectric substrate 1a vibrates in the vertical direction with a stroke of 0.1 mm to 5 mm. As a result, the new electroless plating solution 3 is supplied to the inside of the groove 5, and unevenness in the thickness of the plating film 4 is suppressed. Further, although gas is generated with the deposition of the plating film 4, it is possible to prevent the gas from forming bubbles and closing the opening of the groove 5.

図4(c)は、無電解めっき工程Syによりめっき膜4を形成した圧電体基板1aの溝5の長手方向に直交する方向の断面模式図である。めっき膜4は圧電体基板1aの露出面Epに形成する。 FIG. 4C is a schematic cross-sectional view in a direction orthogonal to the longitudinal direction of the groove 5 of the piezoelectric substrate 1a having the plated film 4 formed by the electroless plating step Sy. The plating film 4 is formed on the exposed surface Ep of the piezoelectric substrate 1a.

次に、ヘッド組立工程Szにおいて、圧電体基板1aを用いて液体噴射ヘッド10を組み立てる。図4(d)は、組み立て後の溝5の長手方向における液体噴射ヘッド10の断面模式図である。めっき膜4が形成される圧電体基板1aの基板面Sにカバープレート12を接着し、カバープレート12と圧電体基板1aの前方端面Fpにノズルプレート13を接着する。カバープレート12には液体供給室12aが形成され、ノズルプレート13にはノズル13aが形成され、いずれも溝5に連通する。溝5の側面のめっき膜4が側壁9を駆動する駆動電極となり、圧電体基板1aの後方のめっき膜4が電極端子となる。なお、本発明の液体噴射ヘッドの製造方法は、図4(d)に示すエッジシュート型の液体噴射ヘッド10に限定されず、サイドシュート型や液体循環型の液体噴射ヘッドに適用することができる。 Next, in the head assembly step Sz, the liquid jet head 10 is assembled using the piezoelectric substrate 1a. FIG. 4D is a schematic sectional view of the liquid jet head 10 in the longitudinal direction of the groove 5 after assembly. The cover plate 12 is bonded to the substrate surface S of the piezoelectric substrate 1a on which the plating film 4 is formed, and the nozzle plate 13 is bonded to the cover plate 12 and the front end face Fp of the piezoelectric substrate 1a. A liquid supply chamber 12a is formed in the cover plate 12, and a nozzle 13a is formed in the nozzle plate 13, both of which communicate with the groove 5. The plating film 4 on the side surface of the groove 5 serves as a drive electrode for driving the side wall 9, and the plating film 4 behind the piezoelectric substrate 1a serves as an electrode terminal. The method of manufacturing a liquid jet head according to the present invention is not limited to the edge shoot type liquid jet head 10 shown in FIG. 4D, but can be applied to a side shoot type or liquid circulation type liquid jet head. ..

(第三実施形態)
図5は本発明の第三実施形態に係る液体噴射ヘッドの製造方法の工程図である。図6〜図8は本発明の第三実施形態に係る液体噴射ヘッドの製造方法における各工程を説明するための図である。図6(a)〜(d)は圧電体基板1aの断面模式図であり、図6(e)は洗浄方法又は無電解めっき法の説明図である。図7(a)〜(d)は圧電体基板1aの断面模式図である。図8は液体噴射ヘッド10の模式的な分解斜視図である。同一の部分又は同一の機能を有する部分には同一の符号を付している。
(Third embodiment)
FIG. 5 is a process diagram of a method for manufacturing a liquid jet head according to the third embodiment of the present invention. 6 to 8 are views for explaining each step in the method of manufacturing the liquid jet head according to the third embodiment of the present invention. 6A to 6D are schematic sectional views of the piezoelectric substrate 1a, and FIG. 6E is an explanatory diagram of the cleaning method or the electroless plating method. 7A to 7D are schematic sectional views of the piezoelectric substrate 1a. FIG. 8 is a schematic exploded perspective view of the liquid jet head 10. The same portions or portions having the same function are designated by the same reference numerals.

本発明の第三実施形態に係る液体噴射ヘッドの製造方法は、圧電体基板1aを準備する準備工程S1と、圧電体基板1aの基板面Sに感光性樹脂層6を形成する感光性樹脂層形成工程S2と、感光性樹脂層6のパターニングを行うパターン形成工程S3と、圧電体基板1aの基板面Sに複数の溝5を形成する溝形成工程Smと、圧電体基板1aの露出面Epを洗浄する第一洗浄工程Sx1と、圧電体基板1aの露出面Epを脱脂する脱脂工程S4と、圧電体基板1aの露出面Epをエッチングするエッチング工程S5と、圧電体基板1aの露出面Epを洗浄する第二洗浄工程Sx2と、圧電体基板1aの露出面Epを酸処理する酸処理工程S6と、圧電体基板1aの露出面Epにめっき触媒を付着させる触媒付着工程S7と、めっき触媒が付着する露出面Epにめっき膜4を析出させる無電解めっき工程Syと、感光性樹脂層6を除去する感光性樹脂層除去工程S8と、圧電体基板1aを用いて液体噴射ヘッド10に組み立てるヘッド組立工程Szとを備える。 A method for manufacturing a liquid jet head according to a third embodiment of the present invention includes a preparatory step S1 of preparing a piezoelectric substrate 1a and a photosensitive resin layer for forming a photosensitive resin layer 6 on a substrate surface S of the piezoelectric substrate 1a. Forming step S2, pattern forming step S3 for patterning the photosensitive resin layer 6, groove forming step Sm for forming a plurality of grooves 5 on the substrate surface S of the piezoelectric substrate 1a, and exposed surface Ep of the piezoelectric substrate 1a. Cleaning step Sx1 for cleaning the exposed surface Ep of the piezoelectric substrate 1a, an etching step S5 for etching the exposed surface Ep of the piezoelectric substrate 1a, and an exposed surface Ep of the piezoelectric substrate 1a. A second cleaning step Sx2 for cleaning the substrate, an acid treatment step S6 for treating the exposed surface Ep of the piezoelectric substrate 1a with an acid, a catalyst attachment step S7 for attaching a plating catalyst to the exposed surface Ep of the piezoelectric substrate 1a, and a plating catalyst. , The electroless plating step Sy for depositing the plating film 4 on the exposed surface Ep, the photosensitive resin layer removing step S8 for removing the photosensitive resin layer 6, and the liquid jet head 10 using the piezoelectric substrate 1a. And a head assembling step Sz.

具体的に説明する。準備工程S1において、図6(a)に示すように、圧電体基板1aを準備する。圧電体基板1aは、基板面Sの法線方向に分極処理が施されているPZTセラミックス板を使用することができる。例えば、法線方向に分極Pを有する圧電体基板と、反対方向に分極(−P)を有する圧電体基板とを分極境界Zの位置で積層接着されるシェブロン型の圧電体基板1aを使用することができる。なお、本発明はシェブロン型の圧電体基板1aに限定されない。 This will be specifically described. In the preparation step S1, as shown in FIG. 6A, the piezoelectric substrate 1a is prepared. As the piezoelectric substrate 1a, it is possible to use a PZT ceramics plate that is polarized in the direction normal to the substrate surface S. For example, a chevron-type piezoelectric substrate 1a is used in which a piezoelectric substrate having a polarization P in the normal direction and a piezoelectric substrate having a polarization (−P) in the opposite direction are laminated and bonded at the position of the polarization boundary Z. be able to. The present invention is not limited to the chevron type piezoelectric substrate 1a.

次に、感光性樹脂層形成工程S2において、図6(b)に示すように、圧電体基板1aの表面(基板面S)に感光性樹脂層6を設置する。感光性樹脂層6としてレジスト膜を使用することができる。圧電体基板1aの基板面Sにフィルム状レジストをラミネートしてレジスト膜を設置してもよいし、圧電体基板1aの基板面Sにレジスト液をデスペンサーやコーターを使用して塗布し、乾燥してレジスト膜を形成してもよい。 Next, in the photosensitive resin layer forming step S2, as shown in FIG. 6B, the photosensitive resin layer 6 is provided on the surface (substrate surface S) of the piezoelectric substrate 1a. A resist film can be used as the photosensitive resin layer 6. A resist film may be provided by laminating a film resist on the substrate surface S of the piezoelectric substrate 1a, or a resist solution may be applied to the substrate surface S of the piezoelectric substrate 1a using a dispenser or coater and dried. Then, a resist film may be formed.

次に、パターン形成工程S3において、図6(c)に示すように、感光性樹脂層6のパターンを形成する。例えば、外部駆動回路と電気的接続用の電極端子や電極配線を設置する領域から感光性樹脂層6を除去する。感光性樹脂層6のパターンは、フォトリソグラフィ工程を通し、所定領域から感光性樹脂層6を除去する。なお、パターン形成工程S3は、例えば、圧電体基板1aの基板面Sに溝パターンや電極パターンを形成する必要が無ければ、省略することができる。 Next, in a pattern forming step S3, as shown in FIG. 6C, a pattern of the photosensitive resin layer 6 is formed. For example, the photosensitive resin layer 6 is removed from the region where the electrode terminals and electrode wiring for electrical connection with the external drive circuit are installed. For the pattern of the photosensitive resin layer 6, the photosensitive resin layer 6 is removed from a predetermined area through a photolithography process. The pattern forming step S3 can be omitted if it is not necessary to form a groove pattern or an electrode pattern on the substrate surface S of the piezoelectric substrate 1a.

次に、溝形成工程Smにおいて、図6(d)に示すように、ダイシングブレードDやダイヤモンドカッター等を用いて圧電体基板1aの基板面Sを研削して複数の溝5を形成する。溝5は、液滴吐出用の吐出溝5aと液滴を吐出しない非吐出溝5bを交互に並列に形成する。吐出溝5aは圧電体基板1aの前方端面Fpから後方端面Bpの手前まで、非吐出溝5bは圧電体基板1aの前方端面Fpから後方端面Bpまでストレートに形成する(図6(d)、図8を参照)。なお、図6(d)は図6(c)とは異なる領域の断面を表す。図6(c)は基板面Sに電極端子や電極配線を設置する領域の断面模式図であり、図6(d)は複数の溝5を形成する領域であり、各溝5に交差する方向の断面模式図である。溝5の幅は数10μm〜100μmであり、溝5の深さは300μm〜400μmであり、溝5の長さは1mm〜数mmである。シュブロン型の圧電体基板1aを用いる場合には、分極境界Zの位置が溝5の深さの略1/2となるように溝5を研削する。溝5は数100本以上形成する。溝5と溝5の間の側壁9の幅(厚さ)は数10μm〜100μmである。 Next, in the groove forming step Sm, as shown in FIG. 6D, the substrate surface S of the piezoelectric substrate 1a is ground by using a dicing blade D, a diamond cutter or the like to form a plurality of grooves 5. The grooves 5 are formed by alternately forming ejection grooves 5a for ejecting droplets and non-ejection grooves 5b that do not eject droplets. The ejection groove 5a is formed straight from the front end surface Fp of the piezoelectric substrate 1a to the front side of the rear end surface Bp, and the non-ejection groove 5b is formed straight from the front end surface Fp of the piezoelectric substrate 1a to the rear end surface Bp (FIG. 6D). 8). Note that FIG. 6D shows a cross section of a region different from that in FIG. 6C. FIG. 6C is a schematic cross-sectional view of a region where electrode terminals and electrode wirings are installed on the substrate surface S, and FIG. 6D is a region where a plurality of grooves 5 are formed, and a direction intersecting each groove 5. FIG. The width of the groove 5 is several 10 μm to 100 μm, the depth of the groove 5 is 300 μm to 400 μm, and the length of the groove 5 is 1 mm to several mm. When the chevron-type piezoelectric substrate 1a is used, the groove 5 is ground so that the position of the polarization boundary Z is approximately ½ of the depth of the groove 5. The grooves 5 are formed by several hundreds or more. The width (thickness) of the side wall 9 between the grooves 5 is several tens of μm to 100 μm.

次に、第一洗浄工程Sx1において、図6(e)に示すように、圧電体基板1aの露出面Epを洗浄する。なお、図6(e)は圧電体基板1aを洗浄する様子を基板面Sの正面から見る模式図である。本実施形態では、圧電体基板1aの露出面Epは、各溝5の側面、底面、及び、電極端子及び電極配線の設置領域である。洗浄方法は第一又は第二実施形態と同様である。即ち、複数の圧電体基板1aを基板ホルダーHに固定し、基板ホルダーHに連結する支持アームNの端部を振動発生器Mに接続する。洗浄槽Baを洗浄液2、例えば純水で満たし、溝5の長手方向を上下方向に向けて複数の圧電体基板1aを洗浄液2に浸漬する。そして、振動発生器Mを駆動して支持アームNを上下方向に周波数が20Hz〜400Hzの第二の低周波f2で1〜5分間振動させる。従って、各圧電体基板1aは洗浄液2の中で周波数が20Hz〜400Hzの第二の低周波f2で上下方向、つまり溝5の長手方向に振動する。 Next, in the first cleaning step Sx1, as shown in FIG. 6E, the exposed surface Ep of the piezoelectric substrate 1a is cleaned. Note that FIG. 6E is a schematic view of the state in which the piezoelectric substrate 1a is cleaned, viewed from the front of the substrate surface S. In the present embodiment, the exposed surface Ep of the piezoelectric substrate 1a is the side surface and the bottom surface of each groove 5, and the installation area of the electrode terminal and the electrode wiring. The cleaning method is the same as in the first or second embodiment. That is, the plurality of piezoelectric substrates 1a are fixed to the substrate holder H, and the ends of the support arms N connected to the substrate holder H are connected to the vibration generator M. The cleaning tank Ba is filled with the cleaning liquid 2, for example, pure water, and the plurality of piezoelectric substrates 1a are dipped in the cleaning liquid 2 with the longitudinal direction of the groove 5 oriented vertically. Then, the vibration generator M is driven to vertically vibrate the support arm N at the second low frequency f2 having a frequency of 20 Hz to 400 Hz for 1 to 5 minutes. Therefore, each piezoelectric substrate 1a vibrates in the cleaning liquid 2 at the second low frequency f2 having a frequency of 20 Hz to 400 Hz in the vertical direction, that is, in the longitudinal direction of the groove 5.

これにより、溝形成工程Smにおいて発生し、溝5の側面や底面に付着する研削粉、気泡、或いは、溝5の研削によって結合力が弱くなった結晶粒界や結晶粒を露出面Epから除去することができる。すでに説明したように、第二の低周波f2は、洗浄対象物の径Rが大きいほど周波数Fを小さくし、洗浄対象物の径Rが小さいほど周波数Fを大きくすることが好ましい。本実施形態では溝5の長手方向に圧電体基板1aが振動するので、溝5の内部に洗浄液2の振動が伝達され、露出面Epに付着する異物を効果的に除去することができる。また、超音波洗浄と比較して洗浄液2の相対的な振動エネルギーは小さく、溝構造にクラックを生じさせることはない。 As a result, the grinding powder and bubbles generated in the groove forming step Sm and adhering to the side surfaces and the bottom surface of the groove 5 or the crystal grain boundaries and the crystal grains whose bonding force is weakened by the grinding of the groove 5 are removed from the exposed surface Ep. can do. As described above, it is preferable that the second low frequency f2 has a smaller frequency F as the diameter R of the object to be cleaned is larger, and a frequency F is larger as the diameter R of the object to be cleaned is smaller. In this embodiment, since the piezoelectric substrate 1a vibrates in the longitudinal direction of the groove 5, the vibration of the cleaning liquid 2 is transmitted to the inside of the groove 5 and the foreign matter attached to the exposed surface Ep can be effectively removed. Further, the relative vibration energy of the cleaning liquid 2 is smaller than that in the ultrasonic cleaning, and the groove structure is not cracked.

次に、脱脂工程S4において、圧電体基板1aの露出面Epを親水性表面に転換する。図6(e)に示す基板ホルダーHを純水、界面活性剤が添加される水、有機溶媒等により脱脂する。例えば、界面活性剤が添加された水に浸漬し、圧電体基板1aの露出面Epを親水性表面に転換する。これにより、次のエッチング工程S5においてエッチング液が供給されずにエッチング不良となる領域が発生するのを抑制することができる。 Next, in the degreasing step S4, the exposed surface Ep of the piezoelectric substrate 1a is converted into a hydrophilic surface. The substrate holder H shown in FIG. 6E is degreased with pure water, water containing a surfactant, an organic solvent, or the like. For example, the exposed surface Ep of the piezoelectric substrate 1a is converted into a hydrophilic surface by immersing it in water containing a surfactant. As a result, it is possible to suppress the generation of a region in which the etching solution is not supplied and the etching becomes defective in the next etching step S5.

次に、エッチング工程S5において、図7(a)に示すように、露出面Epをエッチングして粗面化し、無電解めっきにおいて生成するめっき膜4の密着強度を向上させる。例えば、濃度1.5%のフッ化アンモニウム水溶液のエッチング液に圧電体基板1aを浸漬し、露出面EpのPZTセラミックスのエッチングをソフトに(軽く)行って、露出面Epに凹凸を形成する。圧電体基板1aの露出面Epはむらなく軽くエッチングされるが、結晶粒が脱落したり側壁9の上部の強度が低下したりすることはなく、後に形成するめっき膜4の密着強度を向上させることができる。 Next, in the etching step S5, as shown in FIG. 7A, the exposed surface Ep is etched and roughened to improve the adhesion strength of the plating film 4 generated in the electroless plating. For example, the piezoelectric substrate 1a is immersed in an etching solution of an ammonium fluoride aqueous solution having a concentration of 1.5%, and the PZT ceramics on the exposed surface Ep are softly (lightly) etched to form irregularities on the exposed surface Ep. The exposed surface Ep of the piezoelectric substrate 1a is uniformly and lightly etched, but crystal grains do not drop off and the strength of the upper portion of the side wall 9 does not decrease, and the adhesion strength of the plating film 4 to be formed later is improved. be able to.

次に、第二洗浄工程Sx2において、図6(e)に示すように、圧電体基板1aの露出面Epを洗浄する。洗浄方法は第一洗浄工程Sx1と同様である。即ち、複数の圧電体基板1aを基板ホルダーHに固定し、基板ホルダーHに連結する支持アームNの端部を振動発生器Mに接続する。洗浄槽Baに洗浄液2、例えば純水を充填し、複数の圧電体基板1aを洗浄液2に浸漬する。そして、振動発生器Mを駆動して支持アームNを上下方向に周波数が20Hz〜400Hz、好ましくは50Hz〜150Hzの第二の低周波f2で振動させる。従って、各圧電体基板1aは洗浄液2の中で周波数が20Hz〜400Hz、好ましくは50Hz〜150Hzの第二の低周波f2で上下方向、つまり溝5の長手方向に1〜5分間振動させる。エッチング処理により生じたPZTセラミックスの小片や、結合力が弱くなった結晶粒界や結晶粒を露出面Epから除去することができる。 Next, in the second cleaning step Sx2, as shown in FIG. 6E, the exposed surface Ep of the piezoelectric substrate 1a is cleaned. The cleaning method is the same as in the first cleaning step Sx1. That is, the plurality of piezoelectric substrates 1a are fixed to the substrate holder H, and the ends of the support arms N connected to the substrate holder H are connected to the vibration generator M. The cleaning bath Ba is filled with the cleaning liquid 2, for example, pure water, and the plurality of piezoelectric substrates 1 a are immersed in the cleaning liquid 2. Then, the vibration generator M is driven to vibrate the support arm N in the vertical direction at the second low frequency f2 having a frequency of 20 Hz to 400 Hz, preferably 50 Hz to 150 Hz. Therefore, each piezoelectric substrate 1a is vibrated in the cleaning liquid 2 at the second low frequency f2 having a frequency of 20 Hz to 400 Hz, preferably 50 Hz to 150 Hz, in the vertical direction, that is, in the longitudinal direction of the groove 5 for 1 to 5 minutes. It is possible to remove the small pieces of PZT ceramics generated by the etching process, the crystal grain boundaries and the crystal grains with weak bonding force from the exposed surface Ep.

次に、酸処理工程S6において、圧電体基板1aの露出面Epを酸処理、例えば硝酸溶液や酢酸溶液に浸漬する。圧電体基板1aに含まれる鉛は触媒毒として作用する。無電解めっき工程Syにおいては露出面Epにめっき触媒を付着させてめっき反応を促進させるが、露出面Epに触媒毒が存在するとめっき触媒の作用が減ずる。そのため、圧電体基板1aの露出面Epを酸性溶液に浸漬して触媒毒の作用を減ずる。 Next, in the acid treatment step S6, the exposed surface Ep of the piezoelectric substrate 1a is acid-treated, for example, immersed in a nitric acid solution or an acetic acid solution. Lead contained in the piezoelectric substrate 1a acts as a catalyst poison. In the electroless plating step Sy, a plating catalyst is attached to the exposed surface Ep to accelerate the plating reaction, but the presence of a catalyst poison on the exposed surface Ep reduces the action of the plating catalyst. Therefore, the exposed surface Ep of the piezoelectric substrate 1a is immersed in an acidic solution to reduce the action of the catalyst poison.

次に、触媒付着工程S7において、図7(b)に示すように、圧電体基板1aの露出面Epにめっき触媒7を付着させる。めっき触媒7の付着方法として、センシタイザー・アクチベーター法、キャタリスト・アクセレーター法等を用いることができる。センシタイザー・アクチベーター法では、まず、圧電体基板1aを塩化第一錫水溶液に浸漬し(第一工程)、続いて塩化パラジウム水溶液に浸漬して(第二工程)、露出面Epにめっき触媒7としてのパラジウム触媒を付着させる。即ち、塩化錫と塩化パラジウムの酸化還元反応により金属パラジウムを露出面Epに付着させる。上記第一工程と第二工程を繰り返し行って金属パラジウムの付着量を増加させることができる。また、キャタリスト・アクセレーター法では、圧電体基板1aを錫とパラジウムのコロイド溶液に浸漬する。続いて圧電体基板1aを酸性溶液、例えば塩酸溶液に浸漬して活性化し、露出面Epに金属パラジウムを析出させる。 Next, in the catalyst attachment step S7, as shown in FIG. 7B, the plating catalyst 7 is attached to the exposed surface Ep of the piezoelectric substrate 1a. As a method of attaching the plating catalyst 7, a sensitizer/activator method, a catalyst/accelerator method, or the like can be used. In the sensitizer activator method, first, the piezoelectric substrate 1a is dipped in an aqueous solution of stannous chloride (first step), and subsequently, dipped in an aqueous solution of palladium chloride (second step) to form a plating catalyst on the exposed surface Ep. Attach the palladium catalyst as 7. That is, metallic palladium is attached to the exposed surface Ep by the redox reaction of tin chloride and palladium chloride. The amount of metal palladium deposited can be increased by repeating the first step and the second step. Further, in the catalyst accelerator method, the piezoelectric substrate 1a is immersed in a colloidal solution of tin and palladium. Then, the piezoelectric substrate 1a is immersed in an acidic solution, for example, a hydrochloric acid solution to be activated, and metallic palladium is deposited on the exposed surface Ep.

次に、無電解めっき工程Syにおいて、図7(c)に示すように、めっき触媒が付着した露出面Epに無電解めっき法によりめっき膜4を形成する。無電解めっき法によりNi、Cr、Ag、Au等のめっき膜4を形成することができる。無電解めっきは図6(e)に示す装置を使用することができる。即ち、圧電体基板1aを無電解めっき液3に浸漬し圧電体基板1aを10Hz〜200Hz、好ましくは40Hz〜100Hzの第一の低周波f1で振動させながらめっき膜4を形成することができる。具体的には、複数の圧電体基板1aを基板ホルダーHに固定し、基板ホルダーHに連結する支持アームNの端部を振動発生器Mに接続する。めっき槽Bbに無電解めっき液3を満たし、溝5の長手方向を上下方向に向けて複数の圧電体基板1aを無電解めっき液3に浸漬する。そして、所定時間、例えば1分〜5分経過後に、振動発生器Mを駆動して支持アームNを上下方向に10Hz〜200Hz、好ましくは40Hz〜100Hzの第一の低周波f1で所定時間振動させる。従って、各圧電体基板1aは無電解めっき液3の中で周波数が10Hz〜200Hz、好ましくは40Hz〜100Hzの第一の低周波f1で上下方向、つまり溝5の長手方向に振動する。 Next, in the electroless plating step Sy, as shown in FIG. 7C, the plating film 4 is formed on the exposed surface Ep to which the plating catalyst is attached by the electroless plating method. The plating film 4 of Ni, Cr, Ag, Au or the like can be formed by the electroless plating method. For the electroless plating, the device shown in FIG. 6(e) can be used. That is, it is possible to form the plating film 4 while immersing the piezoelectric substrate 1a in the electroless plating solution 3 and vibrating the piezoelectric substrate 1a at the first low frequency f1 of 10 Hz to 200 Hz, preferably 40 Hz to 100 Hz. Specifically, the plurality of piezoelectric substrates 1a are fixed to the substrate holder H, and the ends of the support arms N connected to the substrate holder H are connected to the vibration generator M. The plating bath Bb is filled with the electroless plating solution 3, and the plurality of piezoelectric substrates 1 a are dipped in the electroless plating solution 3 with the longitudinal direction of the groove 5 oriented vertically. Then, after a lapse of a predetermined time, for example, 1 to 5 minutes, the vibration generator M is driven to vertically vibrate the support arm N at a first low frequency f1 of 10 Hz to 200 Hz, preferably 40 Hz to 100 Hz for a predetermined time. .. Therefore, each piezoelectric substrate 1a vibrates vertically in the electroless plating solution 3 at the first low frequency f1 having a frequency of 10 Hz to 200 Hz, preferably 40 Hz to 100 Hz, that is, in the longitudinal direction of the groove 5.

圧電体基板1aを無電解めっき液3に浸漬後、所定時間経過後に圧電体基板1aを振動させるので、圧電体基板1aの振動によって露出面Epに付着しためっき触媒7が剥離するのを防ぐことができる。また、圧電体基板1aの振動によって、溝5の内部に新しい無電解めっき液3が供給され、溝5の内表面(側面及び底面)に析出するめっき膜4の厚みむらを少なくすることができる。また、めっき反応時に発生するガスが溝5の内表面や開口部に付着するのを防止することができる。 After the piezoelectric substrate 1a is immersed in the electroless plating solution 3, the piezoelectric substrate 1a is vibrated after a predetermined time elapses, so that the plating catalyst 7 attached to the exposed surface Ep is prevented from peeling off due to the vibration of the piezoelectric substrate 1a. You can Further, due to the vibration of the piezoelectric substrate 1a, a new electroless plating solution 3 is supplied inside the groove 5, and it is possible to reduce uneven thickness of the plating film 4 deposited on the inner surface (side surface and bottom surface) of the groove 5. .. Further, it is possible to prevent the gas generated during the plating reaction from adhering to the inner surface of the groove 5 or the opening.

次に、感光性樹脂層除去工程S8において、図7(d)に示すように、圧電体基板1aの感光性樹脂層6を除去してめっき膜4のパターンを形成する。感光性樹脂層6が設置される圧電体基板1aの基板面Sにはめっき膜4が形成されず、感光性樹脂層6が設置されていない露出面Epにめっき膜4が形成される。本実施形態では、溝5の内表面と、基板面Sの電極端子11の領域にめっき膜4が残る(図8を参照)。 Next, in the photosensitive resin layer removing step S8, as shown in FIG. 7D, the photosensitive resin layer 6 on the piezoelectric substrate 1a is removed to form a pattern of the plating film 4. The plating film 4 is not formed on the substrate surface S of the piezoelectric substrate 1a on which the photosensitive resin layer 6 is installed, and the plating film 4 is formed on the exposed surface Ep on which the photosensitive resin layer 6 is not installed. In this embodiment, the plating film 4 remains on the inner surface of the groove 5 and the region of the electrode terminal 11 on the substrate surface S (see FIG. 8).

次に、ヘッド組立工程Szにおいて、図8に示すように、圧電体基板1aの基板面Sにカバープレート12を接着し、圧電体基板1a及びカバープレート12の前方の端面FPにノズルプレート13を接着して液体噴射ヘッド10を構成する。 Next, in the head assembly step Sz, as shown in FIG. 8, the cover plate 12 is bonded to the substrate surface S of the piezoelectric substrate 1a, and the nozzle plate 13 is attached to the front end face FP of the piezoelectric substrate 1a and the cover plate 12. The liquid jet head 10 is formed by bonding.

図8に示すように、圧電体基板1aは、基板面Sに交互に配列する吐出溝5aと非吐出溝5bを備える。吐出溝5a及び非吐出溝5bの内表面には上記方法により析出しためっき膜4が設置される。なお、非吐出溝5bの一方の側面のめっき膜4と他方の側面のめっき膜4とは電気的に分離される。無電解めっき法により非吐出溝5bの内表面にめっき膜4を形成した後に、例えば非吐出溝5bの底面にレーザー光を照射して底面のめっき膜4を除去することにより、一方の側面のめっき膜4と他方の側面のめっき膜4とを電気的に分離することができる。圧電体基板1aは基板面Sの後方端面Bp側に個別電極端子11b、個別電極端子11bの前方にコモン電極端子11aを備える。個別電極端子11bは、吐出溝5aを挟んで隣接する2つの非吐出溝5bの吐出溝5a側のめっき膜4を電気的に接続する。コモン電極端子11aは吐出溝5aのめっき膜4と電気的に接続する。 As shown in FIG. 8, the piezoelectric substrate 1a includes ejection grooves 5a and non-ejection grooves 5b that are alternately arranged on the substrate surface S. The plating film 4 deposited by the above method is provided on the inner surfaces of the ejection groove 5a and the non-ejection groove 5b. The plating film 4 on one side surface of the non-ejection groove 5b and the plating film 4 on the other side surface are electrically separated. After the plating film 4 is formed on the inner surface of the non-ejection groove 5b by the electroless plating method, for example, the bottom surface of the non-ejection groove 5b is irradiated with laser light to remove the plating film 4 on the bottom surface. The plating film 4 and the plating film 4 on the other side surface can be electrically separated. The piezoelectric substrate 1a includes individual electrode terminals 11b on the rear end face Bp side of the substrate surface S, and common electrode terminals 11a in front of the individual electrode terminals 11b. The individual electrode terminal 11b electrically connects the plating film 4 on the ejection groove 5a side of the two non-ejection grooves 5b adjacent to each other with the ejection groove 5a interposed therebetween. The common electrode terminal 11a is electrically connected to the plating film 4 of the ejection groove 5a.

カバープレート12は、前方端面Fpが圧電体基板1aの前方端面Fpと面一となるように、また、コモン電極端子11a及び個別電極端子11bが露出するように圧電体基板1aの基板面Sに接着される。カバープレート12は後方側に液体供給室12aを備え、液体供給室12aは、その底面から圧電体基板1aの側に貫通するスリット12bを備える。スリット12bは液体供給室12aと吐出溝5aの後方端とを連通し、液体供給室12aから吐出溝5aに液体を供給する。ノズルプレート13は、圧電体基板1a及びカバープレート12の前方端面Fpに接着される。ノズルプレート13はノズル13aを備え、ノズル13aは吐出溝5aに連通する。 The cover plate 12 is formed on the substrate surface S of the piezoelectric substrate 1a such that the front end face Fp is flush with the front end face Fp of the piezoelectric substrate 1a and the common electrode terminals 11a and the individual electrode terminals 11b are exposed. To be glued. The cover plate 12 has a liquid supply chamber 12a on the rear side, and the liquid supply chamber 12a has a slit 12b penetrating from the bottom surface thereof to the piezoelectric substrate 1a side. The slit 12b connects the liquid supply chamber 12a and the rear end of the ejection groove 5a, and supplies the liquid from the liquid supply chamber 12a to the ejection groove 5a. The nozzle plate 13 is bonded to the front end face Fp of the piezoelectric substrate 1a and the cover plate 12. The nozzle plate 13 includes a nozzle 13a, and the nozzle 13a communicates with the ejection groove 5a.

液体噴射ヘッド10は、次にように動作する。まず、液体供給室12aに液体を供給し、スリット12bを介して吐出溝5aに液体を充填する。そして、コモン電極端子11aと個別電極端子11bに駆動信号を与えて吐出溝5aを挟む両側壁9を厚み滑り変形させる。具体的には、吐出溝5aの容積が拡大する方向に両側壁9を変形させて液体供給室12aから吐出溝5aに液体を引き込み、次に、吐出溝5aの容積が縮小する方向に両側壁9を変形させて、ノズル13aから液滴を吐出する。なお、図8に示す液体噴射ヘッド10は一例である。本発明の液体噴射ヘッドの製造方法は、エッジシュート型の液体噴射ヘッドの他にサイドシュート型や液体循環型の液体噴射ヘッドに適用することができる。 The liquid jet head 10 operates as follows. First, the liquid is supplied to the liquid supply chamber 12a, and the ejection groove 5a is filled with the liquid via the slit 12b. Then, a drive signal is applied to the common electrode terminal 11a and the individual electrode terminal 11b to cause the side walls 9 that sandwich the ejection groove 5a to undergo thickness-slip deformation. Specifically, the side walls 9 are deformed in the direction in which the volume of the ejection groove 5a is expanded to draw the liquid from the liquid supply chamber 12a into the ejection groove 5a, and then the side walls in the direction in which the volume of the ejection groove 5a is reduced. 9 is deformed and droplets are ejected from the nozzle 13a. The liquid jet head 10 shown in FIG. 8 is an example. The method for manufacturing a liquid jet head of the present invention can be applied to a side shoot type or a liquid circulation type liquid jet head as well as an edge shoot type liquid jet head.

1 基板、1a 圧電体基板
2 洗浄液
3 無電解めっき液
4 めっき膜
5 溝、5a 吐出溝、5b 非吐出溝
6 感光性樹脂層
7 めっき触媒
9 側壁
10 液体噴射ヘッド
11 電極端子、11a コモン電極端子、11b 個別電極端子
12 カバープレート、12a 液体供給室、12b スリット
13 ノズルプレート、13a ノズル
f1 第一の低周波、f2 第二の低周波、M 振動発生器、N 支持アーム
H 基板ホルダー、 Ba 洗浄槽、Bb めっき槽、S 基板面、Ep 露出面
Z 分極境界、Fp 前方端面、Bp 後方端面
1 substrate 1a piezoelectric substrate 2 cleaning liquid 3 electroless plating liquid 4 plating film 5 groove 5a discharge groove 5b non-discharge groove 6 photosensitive resin layer 7 plating catalyst 9 side wall 10 liquid jet head 11 electrode terminal, 11a common electrode terminal , 11b individual electrode terminal 12 cover plate, 12a liquid supply chamber, 12b slit 13 nozzle plate, 13a nozzle f1 first low frequency, f2 second low frequency, M vibration generator, N support arm H substrate holder, Ba cleaning Bath, Bb plating bath, S substrate surface, Ep exposed surface Z polarization boundary, Fp front end face, Bp rear end face

Claims (8)

基板を洗浄液に浸漬して洗浄する洗浄工程と、
前記基板を無電解めっき液に浸漬し前記基板を周波数が10Hz〜200Hz(但し、10〜60Hz及び100〜200Hzを除く)の低周波で前記基板の露出面と平行方向に振動させて前記基板の露出面にめっき膜を形成する無電解めっき工程と、を備えるめっき膜形成方法。
A cleaning process of cleaning the substrate by immersing it in a cleaning liquid;
The substrate is immersed in an electroless plating solution and the substrate is vibrated in a direction parallel to the exposed surface of the substrate at a low frequency of 10 Hz to 200 Hz (excluding 10 to 60 Hz and 100 to 200 Hz) . An electroless plating step of forming a plating film on the exposed surface.
前記洗浄工程は、前記基板を前記洗浄液に浸漬し前記基板を周波数が20Hz〜400Hzの低周波で振動させて洗浄する工程である請求項1に記載のめっき膜形成方法。 The plating film forming method according to claim 1, wherein the cleaning step is a step of immersing the substrate in the cleaning liquid and vibrating the substrate at a low frequency of 20 Hz to 400 Hz to clean the substrate. 圧電体基板に複数の溝を並列に形成する溝形成工程と、
前記圧電体基板を洗浄液に浸漬し前記圧電体基板を洗浄する洗浄工程と、
前記圧電体基板を無電解めっき液に浸漬し前記圧電体基板を周波数が10Hz〜200Hz(但し、10〜60Hz及び100〜200Hzを除く)の低周波で前記基板の露出面と平行方向に振動させて前記圧電体基板の露出面にめっき膜を形成する無電解めっき工程と、を備える液体噴射ヘッドの製造方法。
A groove forming step of forming a plurality of grooves in parallel on the piezoelectric substrate,
A cleaning step of cleaning the piezoelectric substrate by immersing the piezoelectric substrate in a cleaning liquid,
The piezoelectric substrate is immersed in an electroless plating solution, and the piezoelectric substrate is vibrated in a direction parallel to the exposed surface of the substrate at a low frequency of 10 Hz to 200 Hz (excluding 10 to 60 Hz and 100 to 200 Hz). And an electroless plating step of forming a plating film on the exposed surface of the piezoelectric substrate.
前記洗浄工程は、前記圧電体基板を前記洗浄液に浸漬し前記圧電体基板を周波数が20Hz〜400Hzの低周波で振動させて洗浄する工程である請求項に記載の液体噴射ヘッドの製造方法。 The method of manufacturing a liquid jet head according to claim 3 , wherein the cleaning step is a step of immersing the piezoelectric substrate in the cleaning liquid and vibrating the piezoelectric substrate at a low frequency of 20 Hz to 400 Hz for cleaning. 前記無電解めっき工程は、前記圧電体基板を前記溝の長手方向に振動させて前記めっき膜を形成する工程を含む請求項3又は請求項4に記載の液体噴射ヘッドの製造方法。 The method of manufacturing a liquid jet head according to claim 3 , wherein the electroless plating step includes a step of vibrating the piezoelectric substrate in a longitudinal direction of the groove to form the plating film. 前記洗浄工程は、前記圧電体基板を前記溝の長手方向に振動させて洗浄する工程である請求項3〜のいずれか一項に記載の液体噴射ヘッドの製造方法。 The washing step, the method of manufacturing the liquid jet head according to the piezoelectric substrate in any one of claims 3-5 is a step of washing by vibrating in the longitudinal direction of the groove. 前記圧電体基板の露出面を前記洗浄工程により洗浄する第一洗浄工程と、
前記圧電体基板の露出面をエッチングするエッチング工程と、
前記圧電体基板の露出面を前記洗浄工程により洗浄する第二洗浄工程と、
前記無電解めっき工程の前に前記圧電体基板の露出面にめっき触媒を付着させる触媒付着工程と、を備える請求項3〜のいずれか一項に記載の液体噴射ヘッドの製造方法。
A first cleaning step of cleaning the exposed surface of the piezoelectric substrate by the cleaning step;
An etching step of etching the exposed surface of the piezoelectric substrate,
A second cleaning step of cleaning the exposed surface of the piezoelectric substrate by the cleaning step;
Method of manufacturing a liquid jet head according to any one of claims 3-6; and a catalyst adhering step of adhering a plating catalyst on the exposed surface of the piezoelectric substrate before the electroless plating step.
前記溝形成工程の前に前記圧電体基板の表面に感光性樹脂層を設置する感光性樹脂層形成工程と、
前記無電解めっき工程の後に前記感光性樹脂層を除去する感光性樹脂層除去工程と、を更に含む請求項3〜のいずれか一項に記載の液体噴射ヘッドの製造方法。
A photosensitive resin layer forming step of installing a photosensitive resin layer on the surface of the piezoelectric substrate before the groove forming step;
Method of manufacturing a liquid jet head according to any one of claims 3-7, wherein the photosensitive resin layer removing step of removing the photosensitive resin layer after the electroless plating step, further comprising a.
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