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JP6737563B2 - Transparent conductive support, touch sensor, and method for manufacturing the same - Google Patents
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JP6737563B2 - Transparent conductive support, touch sensor, and method for manufacturing the same - Google Patents

Transparent conductive support, touch sensor, and method for manufacturing the same Download PDF

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JP6737563B2
JP6737563B2 JP2014021763A JP2014021763A JP6737563B2 JP 6737563 B2 JP6737563 B2 JP 6737563B2 JP 2014021763 A JP2014021763 A JP 2014021763A JP 2014021763 A JP2014021763 A JP 2014021763A JP 6737563 B2 JP6737563 B2 JP 6737563B2
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film layer
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森 富士男
富士男 森
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Nissha Co Ltd
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本発明の技術分野は、タッチセンサ、液晶や有機EL用のディスプレイ前面板等の用途に適用可能な透明導電性支持体の製造方法などを対象とする。 The technical field of the present invention is directed to a method of manufacturing a transparent conductive support applicable to applications such as a touch sensor and a display front plate for liquid crystal or organic EL.

最近、ITOフィルムにとって代わる透明導電性支持体やタッチセンサとして、金属メッシュパターンからなる透明電極を使用する試みがなされている。下記特許文献1の発明は、電磁波遮蔽用シートの発明であるが、金属層を透明基材上に形成した後に、金属層面へレジスト層をメッシュパターン状に設け、次いでレジスト層で覆われていない部分の金属層をエッチングにより除去した後に、レジスト層を除去する所謂フォトリソグラフイ法でメッシュパターンを形成する製造方法を開示している。 Recently, attempts have been made to use a transparent electrode having a metal mesh pattern as a transparent conductive support or a touch sensor that replaces the ITO film. The invention of Patent Document 1 below is an invention of an electromagnetic wave shielding sheet, but after a metal layer is formed on a transparent substrate, a resist layer is provided in a mesh pattern on the metal layer surface, and then is not covered with the resist layer. Disclosed is a manufacturing method in which a mesh pattern is formed by a so-called photolithography method in which a resist layer is removed after a metal layer in a portion is removed by etching.

そして、この特許文献1に記載の電磁波遮蔽用シートの製造方法は、メッシュ状に形成した金属層が銅であり、さらに金属層の表面及び側面に銅−コバルト合金粒子からなる黒化処理層を設け、金属層の光沢を抑制して透明性を維持し、ディスプレイ用前面板の用途に使用している。 Then, in the method for producing an electromagnetic wave shielding sheet described in Patent Document 1, the metal layer formed in a mesh shape is copper, and a blackening treatment layer made of copper-cobalt alloy particles is further provided on the surface and the side surface of the metal layer. It is provided to control the gloss of the metal layer and maintain its transparency, which is used for the front plate of displays.

特許4346607号公報Japanese Patent No. 4346607

しかし、上記特許文献1の発明は、形成した金属層の99.9%以上をエッチングにより除去廃棄することになるので、金属材料の浪費および高騰の原因になっていた。また、黒化処理層を設ける際にも希少金属であるコバルト合金を使用するので金属資源の枯渇の原因になっていた。そして、黒化処理には時間がかかるので、生産性が低い問題もあった。 However, in the invention of Patent Document 1, 99.9% or more of the formed metal layer is to be removed by etching and discarded, which is a cause of waste and soaring of the metal material. Moreover, since a cobalt alloy, which is a rare metal, is used when the blackening treatment layer is provided, it has been a cause of exhaustion of metal resources. Further, since the blackening process takes time, there is a problem that productivity is low.

さらに、黒化処理層は金属層の光沢は抑えられるが、金属層の側面にも形成するので導電性が殆ど向上しないにもかかわらず、金属層の線幅が太くなり、太くなった分だけパターン見えが生じやすくなる。太くなるのを抑えるために粒径の細かい銅−コバルト合金粒子を用いれば金属層の光沢抑制効果が低下する。また、金属層全体に均一に形成されるわけでなく、メッシュパターンの交差した箇所に偏って形成されてしまう問題があった。したがって本発明は、エッチングによる除去廃棄の量を少なくし、黒化処理層を設けることなく金属層の光沢を抑制して透明性を維持できる透明導電性支持体の製造方法などを提供することを目的とする。 Furthermore, the blackening treatment layer suppresses the gloss of the metal layer, but since it is also formed on the side surface of the metal layer, the line width of the metal layer becomes thicker even though the conductivity is hardly improved. The pattern is likely to appear. If copper-cobalt alloy particles having a small particle size are used to suppress the increase in thickness, the effect of suppressing the gloss of the metal layer is reduced. In addition, there is a problem that the metal layer is not uniformly formed on the entire metal layer, but is unevenly formed at the intersections of the mesh patterns. Therefore, the present invention provides a method for producing a transparent conductive support, which can reduce the amount of removal and discard by etching, suppress the gloss of a metal layer and maintain transparency without providing a blackening treatment layer. To aim.

本発明の第1実施態様は、少なくとも触媒膜層上に形成される微細な線状パターンからなる透明導電膜が金属膜層で構成される透明導電性支持体の製造方法であって、触媒膜層上に厚膜のレジスト層を形成し、該レジスト層を露光現像して前記触媒膜層の一部が露出した前記微細な線状パターンからなる溝を形成し、該露出した溝の触媒膜層上にのみ厚膜の金属膜層を形成することを特徴とする透明導電性支持体の製造方法である。 A first embodiment of the present invention is a method for producing a transparent conductive support, in which a transparent conductive film having a fine linear pattern formed on at least a catalyst film layer is composed of a metal film layer, A thick resist layer is formed on the layer, and the resist layer is exposed and developed to form a groove having the fine linear pattern in which a portion of the catalyst film layer is exposed, and the catalyst film of the exposed groove The method for producing a transparent conductive support is characterized in that a thick metal film layer is formed only on the layer.

本発明の第2実施態様は、少なくとも触媒膜層上に形成される引き回し回路および微細な線状パターンからなる透明導電膜が金属膜層で構成されるタッチセンサの製造方法であって、触媒膜層上に厚膜のレジスト層を形成し、該レジスト層を露光現像して前記触媒膜層の一部が露出した前記引き回し回路パターンおよび前記微細な線状パターンからなる溝を形成し、該露出した溝の触媒膜層上にのみ厚膜の金属膜層を形成することを特徴とするタッチセンサの製造方法である。 A second embodiment of the present invention is a method of manufacturing a touch sensor, in which a transparent conductive film including a routing circuit and a fine linear pattern formed on at least a catalyst film layer is a metal film layer, A thick resist layer is formed on the layer, and the resist layer is exposed and developed to form a groove composed of the routing circuit pattern and the fine linear pattern in which a part of the catalyst film layer is exposed, and the exposed In the method of manufacturing a touch sensor, the thick metal film layer is formed only on the catalyst film layer of the groove.

本発明の第3実施態様は、前記第1実施態様の透明導電性支持体の製造方法において、金属膜層が無電解メッキ膜であり、さらに該金属膜層上に金属膜よりも耐食性に優れたメッキ膜を形成することを特徴とする透明導電性支持体の製造方法である。 A third embodiment of the present invention is the method for producing the transparent conductive support according to the first embodiment, wherein the metal film layer is an electroless plating film, and the metal film layer is superior in corrosion resistance to the metal film. And a plating film formed on the transparent conductive support.

本発明の第4実施態様は、前記第2実施態様のタッチセンサの製造方法において、金属膜層が無電解メッキ膜であり、さらに該金属膜層上に金属膜よりも耐食性に優れたメッキ膜を形成することを特徴とするタッチセンサの製造方法である。 A fourth embodiment of the present invention is the method of manufacturing the touch sensor according to the second embodiment, wherein the metal film layer is an electroless plating film, and a plating film having a higher corrosion resistance than the metal film is formed on the metal film layer. Is a method of manufacturing a touch sensor.

本発明の第5実施態様は、前記第1実施態様または第3実施態様の透明導電性支持体の製造方法において、露光現像して形成される線状パターンの溝の断面形状を楔状にすることを特徴とする透明導電性支持体の製造方法である。また、本発明の第6実施態様は、前記第2実施態様または第4実施態様のタッチセンサの製造方法において、露光現像して形成される線状パターンの溝および引き回し回路部の溝の断面形状を楔状にすることを特徴とするタッチセンサの製造方法である。 According to a fifth embodiment of the present invention, in the method for producing a transparent conductive support according to the first embodiment or the third embodiment, the cross-sectional shape of the groove of the linear pattern formed by exposure and development is wedge-shaped. And a method for producing a transparent conductive support. In addition, a sixth embodiment of the present invention is the cross-sectional shape of the groove of the linear pattern and the groove of the routing circuit portion formed by exposure and development in the method of manufacturing a touch sensor according to the second embodiment or the fourth embodiment. Is a wedge-shaped manufacturing method.

本発明の第7実施態様は、前記第1実施態様または第3実施態様の透明導電性支持体の製造方法において、露光現像して形成される線状パターンの溝の側面を微細な凹凸状にすることを特徴とする透明導電性支持体の製造方法である。また、本発明の第8実施態様は、前記第2実施態様または第4実施態様のタッチセンサの製造方法において、露光現像して形成される線状パターンの溝の側面および引き回し回路部の溝の側面を微細な凹凸状にすることを特徴とするタッチセンサの製造方法である。 A seventh embodiment of the present invention is the method for producing a transparent conductive support according to the first embodiment or the third embodiment, wherein the side surface of the groove of the linear pattern formed by exposure and development is formed into fine unevenness. And a method for producing a transparent conductive support. An eighth embodiment of the present invention is the method of manufacturing a touch sensor according to the second embodiment or the fourth embodiment, wherein the side surface of the groove of the linear pattern formed by exposure and development and the groove of the routing circuit portion are formed. It is a method of manufacturing a touch sensor, characterized in that the side surface is made into a fine concavo-convex shape.

本発明の第9実施態様は、前記第7実施態様の透明導電性支持体の製造方法において、レジスト層に微細な微粒子が含有され、該微粒子の存在によって露光現像して形成される線状パターンの溝の側面を微細な凹凸状にすることを特徴とする透明導電性支持体の製造方法である。また、本発明の第10実施態様は、前記第8実施態様のタッチセンサの製造方法において、レジスト層に微細な微粒子が含有され、該微粒子の存在によって露光現像して形成される線状パターンの溝の側面および引き回し回路部の溝の側面を微細な凹凸状にすることを特徴とするタッチセンサの製造方法である。 A ninth embodiment of the present invention is the linear pattern formed by the method for producing a transparent conductive support according to the seventh embodiment, wherein the resist layer contains fine particles, and the presence of the particles exposes and develops the fine particles. The method for producing a transparent conductive support is characterized in that the side surface of the groove is formed into a fine concavo-convex shape. A tenth embodiment of the present invention is the method of manufacturing a touch sensor according to the eighth embodiment, wherein the resist layer contains fine particles, and a linear pattern formed by exposure and development due to the presence of the particles is used. It is a method for manufacturing a touch sensor, characterized in that the side surface of the groove and the side surface of the groove of the routing circuit section are formed into fine irregularities.

本発明の第11実施態様は、触媒膜層上に形成される微細な線状パターンからなる透明導電膜が金属膜層で構成される透明導電性支持体であって、触媒膜層上に該金属膜層とレジスト層とが並列して構成されていることを特徴とする透明導電性支持体である。また、本発明の第12実施態様は、触媒膜層上に形成される微細な線状パターンからなる透明導電膜および引き回し回路が金属膜層で構成されるタッチセンサであって、触媒膜層上に該金属膜層とレジスト層とが並列して構成されていることを特徴とするタッチセンサである。 An eleventh embodiment of the present invention is a transparent conductive support, in which a transparent conductive film having a fine linear pattern formed on a catalyst film layer is composed of a metal film layer, and the transparent conductive support is formed on the catalyst film layer. A transparent conductive support comprising a metal film layer and a resist layer arranged in parallel. A twelfth embodiment of the present invention is a touch sensor in which a transparent conductive film having a fine linear pattern formed on a catalyst film layer and a routing circuit are formed of a metal film layer, and In the touch sensor, the metal film layer and the resist layer are arranged in parallel.

本発明の第13実施態様は、第11実施態様の金属膜層が無電解メッキで形成され、該金属膜層の上に金属膜層よりも耐食性に優れたメッキ層が積層されていることを特徴とする透明導電性支持体である。また、本発明の第14実施態様は、第12実施態様の金属膜層が無電解メッキで形成され、該金属膜層の上に金属膜層よりも耐食性に優れたメッキ層が積層されていることを特徴とするタッチセンサである。 A thirteenth embodiment of the present invention is that the metal film layer of the eleventh embodiment is formed by electroless plating, and a plating layer having higher corrosion resistance than the metal film layer is laminated on the metal film layer. It is a characteristic transparent conductive support. In addition, in a fourteenth embodiment of the present invention, the metal film layer of the twelfth embodiment is formed by electroless plating, and a plating layer having higher corrosion resistance than the metal film layer is laminated on the metal film layer. It is a touch sensor characterized in that.

本発明の第15実施態様は、第13実施態様の無電解メッキで形成される金属膜層の断面形状が楔状になっていることを特徴とする透明導電性支持体である。また、本発明の第16実施態様は、第14実施態様の無電解メッキで形成される金属膜層の断面形状が楔状になっていることを特徴とするタッチセンサである。 The 15th embodiment of the present invention is the transparent conductive support, wherein the cross-sectional shape of the metal film layer formed by the electroless plating of the 13th embodiment is wedge-shaped. A sixteenth embodiment of the present invention is a touch sensor characterized in that a metal film layer formed by electroless plating according to the fourteenth embodiment has a wedge-shaped cross section.

本発明の第17実施態様は、第11実施態様等の金属膜層の側面が微細な凹凸形状になっていることを特徴とする透明導電性支持体である。また、本発明の第18実施態様は、第12実施態様等の金属膜層の側面が微細な凹凸形状になっていることを特徴とするタッチセンサである。 The 17th embodiment of the present invention is the transparent conductive support, wherein the side surface of the metal film layer of the 11th embodiment or the like has fine irregularities. An eighteenth embodiment of the present invention is a touch sensor according to the twelfth embodiment or the like, in which the side surface of the metal film layer has a fine concavo-convex shape.

本発明の第1実施態様の透明導電性支持体の製造方法は、触媒膜層の一部が露出した前記微細な線状パターンからなる溝を形成し、該露出した溝の触媒膜層上のみに厚膜の金属膜層を無電解メッキ等により形成することを特徴とするので、本発明の第11実施態様のような透明導電性支持体を製造することができる。したがって、無電解メッキ等に使用される金属材料の消費量が必要最低限で済む効果がある。したがって、環境に優しくかつコストパフォーマンスにも優れた透明導電性支持体を製造することができる。 In the method for producing a transparent conductive support according to the first embodiment of the present invention, a groove having the fine linear pattern in which a part of the catalyst film layer is exposed is formed, and the exposed groove is formed only on the catalyst film layer. Since the thick metal film layer is formed by electroless plating or the like, the transparent conductive support according to the eleventh embodiment of the present invention can be manufactured. Therefore, there is an effect that the consumption amount of the metal material used for electroless plating or the like can be minimized. Therefore, it is possible to manufacture a transparent conductive support that is environmentally friendly and has excellent cost performance.

本発明の第2実施態様のタッチセンサの製造方法は、透明導電膜の部分とともに引き回し回路の部分も同時に形成することを特徴とするので、本発明の第12実施態様のようなタッチセンサを製造することができる。したがって、工程が短縮され、透明導電膜のパターンと引き回し回路のパターンとの位置合わせが不要になるので、生産性が大幅に向上しコストダウンができる効果がある。 The method of manufacturing the touch sensor according to the second embodiment of the present invention is characterized in that the routing circuit portion is formed at the same time as the transparent conductive film portion. Therefore, the touch sensor according to the twelfth embodiment of the present invention is produced. can do. Therefore, the process is shortened, and the alignment between the pattern of the transparent conductive film and the pattern of the routing circuit is not required, which has the effect of significantly improving the productivity and reducing the cost.

本発明の第3実施態様の透明導電性支持体の製造方法または第4実施態様のタッチセンサの製造方法は、金属膜層が無電解メッキ膜であり、さらに該金属膜層上に金属膜よりも耐食性に優れたメッキ膜を形成して、本発明の第13実施態様のような透明導電性支持体または第14実施態様のようなタッチセンサを製造することを特徴とする。したがって、該メッキ膜によって金属膜層が覆われ、金属膜層表面の腐食を防止できる効果がある。金属膜層表面の光沢が抑制されるため、該光沢によって視認されていた微細な線状パターンからなる透明導電膜のパターン見えを軽減できる効果がある。また、該メッキ膜には金属膜層上のみに形成されるので、該メッキ膜の材料の使用量も少なくて済み、かつ金属膜層の側面には形成されないので透明導電膜の微細な線状パターンの線幅は該メッキ膜より太くならない。よって、透明導電膜の微細な線状パターンの開口率はそのまま維持され、透明性に優れた透明導電膜およびタッチセンサを製造できる効果がある。 In the method for manufacturing a transparent conductive support according to the third embodiment of the present invention or the method for manufacturing a touch sensor according to the fourth embodiment, the metal film layer is an electroless plating film, and a metal film is formed on the metal film layer by a metal film. Is characterized by forming a plated film having excellent corrosion resistance to manufacture a transparent conductive support as in the thirteenth embodiment of the present invention or a touch sensor as in the fourteenth embodiment. Therefore, there is an effect that the metal film layer is covered with the plating film and the corrosion of the surface of the metal film layer can be prevented. Since the gloss of the surface of the metal film layer is suppressed, there is an effect that the pattern appearance of the transparent conductive film having a fine linear pattern which is visually recognized due to the gloss can be reduced. Further, since the plating film is formed only on the metal film layer, the amount of the material of the plating film used is small, and the plating film is not formed on the side surface of the metal film layer. The line width of the pattern is not thicker than the plating film. Therefore, the aperture ratio of the fine linear pattern of the transparent conductive film is maintained as it is, and the transparent conductive film and the touch sensor having excellent transparency can be manufactured.

本発明の第5実施態様の透明導電性支持体の製造方法または第6実施態様のタッチセンサの製造方法は、露光現像して形成される線状パターンの溝の断面形状を楔状にすることを特徴とする。したがって、該製造方法によって形成される金属膜層はその側面が第15実施態様の透明導電性支持体または第16実施態様のタッチセンサのような隠される形状になるため、該金属膜層の側面が光沢を有していても、該光沢が視認されにくいため、微細な線状パターンからなる透明導電膜のパターン見えを軽減できる効果がある。 In the method for manufacturing a transparent conductive support according to the fifth embodiment of the present invention or the method for manufacturing a touch sensor according to the sixth embodiment, the cross-sectional shape of the linear pattern groove formed by exposure and development is wedge-shaped. Characterize. Therefore, the side surface of the metal film layer formed by the manufacturing method has a hidden shape like the transparent conductive support of the fifteenth embodiment or the touch sensor of the sixteenth embodiment, and thus the side surface of the metal film layer. Even if the layer has gloss, the gloss is hard to be visually recognized, and therefore, the pattern appearance of the transparent conductive film having a fine linear pattern can be reduced.

本発明の第7実施態様の透明導電性支持体の製造方法または第8実施態様のタッチセンサの製造方法は、露光現像して形成される線状パターンの溝の側面が微細な凹凸状になっていることを特徴とする。したがって、該製造方法によって形成される金属膜層はその側面が第17実施態様の透明導電性支持体または第18実施態様のタッチセンサのような微細な凹凸状になり、該微細な凹凸によって該側面の光沢も抑制されるため、該側面の光沢によって視認されていた微細な線状パターンからなる透明導電膜のパターン見えをさらに軽減できる効果がある。 In the method for manufacturing a transparent conductive support according to the seventh embodiment of the present invention or the method for manufacturing a touch sensor according to the eighth embodiment, the side surface of the groove of the linear pattern formed by exposure and development has fine irregularities. It is characterized by Therefore, the side surface of the metal film layer formed by the manufacturing method becomes a fine concavo-convex shape like the transparent conductive support of the seventeenth embodiment or the touch sensor of the eighteenth embodiment, and the fine concavo-convex shape causes Since the gloss of the side surface is also suppressed, there is an effect that it is possible to further reduce the appearance of the pattern of the transparent conductive film having a fine linear pattern which is visually recognized by the gloss of the side surface.

本発明の第9実施態様の透明導電性支持体の製造方法および第10実施態様のタッチセンサの製造方法は、レジスト層に微細な微粒子が含有され、該微粒子の存在によって露光現像して形成される線状パターンの溝の側面が微細な凹凸状になることを特徴とする。したがって、容易に線状パターンの溝の側面を微細な凹凸状にすることができ、生産性が向上する効果がある。 The method for manufacturing a transparent conductive support according to the ninth embodiment of the present invention and the method for manufacturing a touch sensor according to the tenth embodiment include a resist layer containing fine particles, which are formed by exposure and development due to the presence of the particles. It is characterized in that the side surface of the groove of the linear pattern having a fine pattern is formed into fine irregularities. Therefore, the side surface of the groove of the linear pattern can be easily made into a fine concavo-convex shape, which has the effect of improving productivity.

本発明の第一実施態様の透明導電性支持体の製造方法の全工程例を示す断面図である。It is sectional drawing which shows all the process examples of the manufacturing method of the transparent conductive support body of 1st embodiment of this invention. 本発明の第二実施態様のタッチセンサの製造方法等によって製造された第十実施態様のタッチセンサ300の例を示す断面図である。It is sectional drawing which shows the example of the touch sensor 300 of 10th embodiment manufactured by the manufacturing method etc. of the touch sensor of 2nd embodiment of this invention. 本発明の第三実施態様の透明導電性支持体の製造方法の工程例の一部を示す断面図である。It is sectional drawing which shows a part of process example of the manufacturing method of the transparent conductive support body of 3rd embodiment of this invention. 図3(b)で形成された積層膜30を拡大した断面図である。FIG. 4 is an enlarged cross-sectional view of the laminated film 30 formed in FIG. 本発明の第九実施態様の透明導電性支持体の製造方法の工程例の一部を示す断面図である。It is sectional drawing which shows a part of process example of the manufacturing method of the transparent conductive support body of 9th embodiment of this invention. 微細な凹凸形状11のプロファイルである。It is a profile of the fine uneven shape 11.

本発明の好ましい実施形態を、図面を参照して詳述する。しかし、本発明はこれらの実施形態に限定されるものではない。 Preferred embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to these embodiments.

図1は本発明の第一実施態様の透明導電性支持体の製造方法の全工程例を示す断面図であり、透明支持体40の表面に触媒5を含有した触媒膜層10を形成し(図1(a))、該触媒膜層10上に厚膜のレジスト層50を形成して(図1(b))、該レジスト層50を露光現像して前記触媒膜層10の一部が露出した前記微細な線状パターンからなる溝1を形成し(図1(c))、該露出した溝1の触媒膜層10上のみに厚膜の金属膜層20を無電解メッキ等により形成している(図1(d))。なお、触媒5を透明支持体40に含有させておくことにより触媒膜層10を無くすことも可能であり、その構成も本願発明に含まれる。 FIG. 1 is a cross-sectional view showing an example of all steps of the method for producing a transparent conductive support according to the first embodiment of the present invention, in which a catalyst film layer 10 containing a catalyst 5 is formed on the surface of a transparent support 40 ( 1(a)), a thick resist layer 50 is formed on the catalyst film layer 10 (FIG. 1(b)), and the resist layer 50 is exposed and developed to partially remove the catalyst film layer 10. The exposed groove 1 having the fine linear pattern is formed (FIG. 1C), and the thick metal film layer 20 is formed only on the catalyst film layer 10 of the exposed groove 1 by electroless plating or the like. (Fig. 1(d)). The catalyst film layer 10 can be eliminated by incorporating the catalyst 5 into the transparent support 40, and the configuration is also included in the present invention.

この製造方法により得られる透明導電性支持体400は透明支持体40の表面に触媒膜層10が形成され、該触媒膜層10上に透明導電膜100が形成されており、該透明導電膜100は微細な線状パターンからなる金属膜層20で構成される。そして、該透明導電膜100の微細な線状パターンとしては、線幅0.5〜10μmで線間が該線幅の10倍〜1000倍のメッシュ状またはハニカム状パターンなどが挙げられる。 In the transparent conductive support 400 obtained by this manufacturing method, the catalyst film layer 10 is formed on the surface of the transparent support 40, and the transparent conductive film 100 is formed on the catalyst film layer 10. Is composed of a metal film layer 20 having a fine linear pattern. The fine linear pattern of the transparent conductive film 100 may be a mesh or honeycomb pattern having a line width of 0.5 to 10 μm and a line spacing of 10 to 1000 times the line width.

図2は本発明の第二実施態様のタッチセンサの製造方法等によって製造された第十実施態様のタッチセンサ300の例を示す断面図であり、触媒膜層10上に、金属膜層20によって構成される引き回し回路200および微細な線状パターンからなる透明導電膜100が形成されている。 FIG. 2 is a cross-sectional view showing an example of the touch sensor 300 of the tenth embodiment manufactured by the method of manufacturing the touch sensor of the second embodiment of the present invention, in which the metal film layer 20 is formed on the catalyst film layer 10. The routing circuit 200 and the transparent conductive film 100 having a fine linear pattern are formed.

図3は本発明の第三実施態様の透明導電性支持体の製造方法の工程例の一部を示す断面図であり、露出した溝1の触媒膜層10上のみに厚膜の電解メッキ膜からなる金属膜層20を形成した後(図3(a))、さらに該金属膜層上に金属膜層よりも耐食性に優れたメッキ層25が形成されている(図3(b))。したがって、この製造方法により得られる透明導電膜100は微細な線状パターンからなり金属膜層20と耐食性に優れたメッキ層25との積層膜30で構成される。 FIG. 3 is a cross-sectional view showing a part of a process example of the method for producing a transparent conductive support according to the third embodiment of the present invention, in which a thick electrolytic plating film is formed only on the exposed catalyst film layer 10 of the groove 1. After forming the metal film layer 20 made of (FIG. 3A), a plating layer 25 having a higher corrosion resistance than the metal film layer is further formed on the metal film layer (FIG. 3B). Therefore, the transparent conductive film 100 obtained by this manufacturing method is composed of a laminated film 30 having a fine linear pattern and a metal film layer 20 and a plated layer 25 having excellent corrosion resistance.

図4は図3(b)で形成された積層膜30を拡大した断面図であり、露光現像して線状パターンの溝1を形成する工程において露光時間を長めにすることにより金属膜層20の断面が楔状の形状32になっていることを示す。該形状32になることにより、金属膜層20の側面は金属膜層よりも耐食性に優れたメッキ層25によって覆い隠されるので、透明導電膜の微細な線状パターンの線幅は太くならず、また金属膜層20の側面が光沢を有していても該光沢は外部から視認されにくくなるため、微細な線状パターンのパターン見えが軽減される。 FIG. 4 is an enlarged cross-sectional view of the laminated film 30 formed in FIG. 3B, in which the metal film layer 20 is formed by increasing the exposure time in the step of forming the groove 1 having a linear pattern by exposure and development. Shows that the cross section has a wedge shape 32. By having the shape 32, the side surface of the metal film layer 20 is covered with the plating layer 25 having higher corrosion resistance than the metal film layer, and thus the line width of the fine linear pattern of the transparent conductive film does not become thick, Further, even if the side surface of the metal film layer 20 has a gloss, the gloss is less visible to the outside, so that the pattern appearance of a fine linear pattern is reduced.

図5は本発明の第九実施態様の透明導電性支持体の製造方法の工程例の一部を示す断面図であり、レジスト層50に微細な微粒子55が含有され(図5(a))、該微粒子55の存在によって露光現像して形成される線状パターンの溝1の側面が微細な凹凸形状11になっており(図5(b))、それによって製造される金属膜層20の側面は光沢が抑えられた艶消し状態になり、微細な線状パターンのパターン見えが軽減される。 FIG. 5 is a cross-sectional view showing a part of a process example of the method for producing a transparent conductive support according to the ninth embodiment of the present invention, in which the resist layer 50 contains fine particles 55 (FIG. 5(a)). The side surface of the groove 1 of the linear pattern formed by exposure and development due to the presence of the fine particles 55 has a fine concavo-convex shape 11 (FIG. 5(b)), and the metal film layer 20 manufactured thereby is formed. The side surface is in a matte state with suppressed gloss, and the pattern appearance of fine linear patterns is reduced.

図6は該図5の微細な凹凸形状11のプロファイル例を示した図であり、基準点はレジスト層50の表面と溝1の交点51とする。横軸は基準点から溝1の深さ方向の距離を,縦軸は各深さでの側面の位置を示している。プラス側は基準点より外側にはみ出た状態,マイナス側は基準点より凹んだ状態を示している。 FIG. 6 is a view showing an example of a profile of the fine concavo-convex shape 11 of FIG. 5, and the reference point is the intersection 51 of the surface of the resist layer 50 and the groove 1. The horizontal axis shows the distance from the reference point in the depth direction of the groove 1, and the vertical axis shows the position of the side surface at each depth. The plus side shows a state protruding beyond the reference point, and the minus side shows a state recessed from the reference point.

露光は、所定のパターンマスクを取り付け、その上から紫外線などの露光光線を照射するとよい。通常の露光では、ネガ型のレジスト層50を使用して露光光線を長く照射しすぎると露光光線が回り込んで硬化し現像後のレジスト層50の断面形状が逆楔型のような台形形状になってしまうので良くないとされるが、本発明では故意にレジスト層50の断面形状をそのような逆楔型の形状にして、それに伴って金属膜層20の断面形状を楔状の形状32に製造することができ、断面形状が楔状の形状32になれば金属膜層20の側面に光沢があっても、該光沢が外部から視認されず、微細な線状パターンのパターン見えが軽減されるようにしている。 For the exposure, a predetermined pattern mask may be attached, and an exposure light beam such as ultraviolet rays may be applied onto the mask. In normal exposure, when the negative-type resist layer 50 is used and the exposure light beam is irradiated for too long, the exposure light beam wraps around and cures, and the resist layer 50 after development has a trapezoidal shape like an inverted wedge shape. However, in the present invention, the cross-sectional shape of the resist layer 50 is intentionally made into such an inverted wedge shape, and accordingly, the cross-sectional shape of the metal film layer 20 is changed to the wedge-shaped shape 32. If it can be manufactured and the cross-sectional shape is the wedge shape 32, even if the side surface of the metal film layer 20 has gloss, the gloss is not visually recognized from the outside and the pattern appearance of a fine linear pattern is reduced. I am trying.

透明支持体40は、熱可塑性樹脂、熱や紫外線や電子線や放射線などで硬化する硬化性樹脂のほか、ガラス、セラミックス、無機材などからなる。透明な熱可塑性樹脂としてはポリエチレン、ポリプロピレン、環状ポリオレフィン等のオレフィン系樹脂、ポリ塩化ビニル、ポリメチルメタクリレート、ポリスチレン等のビニル系樹脂、ニトロセルロース、トリアセチルセルロース等のセルロース系樹脂、ポリカーボネート、ポリエチレンテレフタレート、ポリジメチルシクロヘキサンテレフタレート、芳香族ポリエステル等のエステル系樹脂、ABS樹脂、これらの樹脂の共重合体樹脂、これらの樹脂の混合樹脂が挙げられる。透明な硬化性樹脂としては、例えばエポキシ樹脂、ポリイミド樹脂が挙げられる。 The transparent support 40 is made of a thermoplastic resin, a curable resin that is cured by heat, ultraviolet rays, electron beams, radiation, or the like, as well as glass, ceramics, an inorganic material, or the like. Examples of the transparent thermoplastic resin include olefin resins such as polyethylene, polypropylene and cyclic polyolefin, vinyl resins such as polyvinyl chloride, polymethylmethacrylate and polystyrene, cellulose resins such as nitrocellulose and triacetyl cellulose, polycarbonate and polyethylene terephthalate. , Ester resins such as polydimethylcyclohexane terephthalate and aromatic polyesters, ABS resins, copolymer resins of these resins, and mixed resins of these resins. Examples of the transparent curable resin include epoxy resin and polyimide resin.

金属膜層20は、無電解メッキによって形成される銅、銀、ニッケル、アルミニウムなどの金属膜のほか、直流を使用できるのであればアルミニウムや銅などの電解メッキ膜であってもよい。また、酸化チタンなどの導電性金属酸化物膜、金属ナノワイヤや金属粒子などを含有する金属含有導電性コーティング膜などでもよい。その中でも、効率性を考慮すると、無電解メッキによって形成される金属膜がとくに好ましい。なお、金属膜層20は複数の材料からなる積層膜であってもよい。 The metal film layer 20 may be a metal film of copper, silver, nickel, aluminum or the like formed by electroless plating, or may be an electroplated film of aluminum or copper as long as direct current can be used. Further, a conductive metal oxide film such as titanium oxide, a metal-containing conductive coating film containing metal nanowires, metal particles, or the like may be used. Among these, a metal film formed by electroless plating is particularly preferable in consideration of efficiency. The metal film layer 20 may be a laminated film made of a plurality of materials.

無電解メッキの中でも、電解メッキの効率性や材料の汎用性およびコストを考慮すると、自己触媒性のある銅の無電解メッキ膜がとくに好ましい。銅の無電解メッキ膜を得るには、銅イオン源と電子を供給するホルムアルデヒドなどの還元剤とがメッキ溶液中に含まれることが必須条件である。さらに、モノカルボン酸、ジカルボン酸およびオキシカルボン酸などの緩衝剤、酒石酸やEDTAなどの錯化剤等を添加してもよい。膜厚は0.5〜30μm程度が好ましい。該膜厚が0.5未満であると導電性が不足しがちになり、該膜厚が30μmを超えると膜の強度が低下する場合がある。 Among electroless plating, a copper electroless plating film having a self-catalytic property is particularly preferable in consideration of efficiency of electrolytic plating, versatility of materials, and cost. In order to obtain a copper electroless plating film, it is an essential condition that the plating solution contains a copper ion source and a reducing agent such as formaldehyde that supplies electrons. Further, buffering agents such as monocarboxylic acid, dicarboxylic acid and oxycarboxylic acid, complexing agents such as tartaric acid and EDTA, etc. may be added. The film thickness is preferably about 0.5 to 30 μm. If the film thickness is less than 0.5, the conductivity tends to be insufficient, and if the film thickness exceeds 30 μm, the strength of the film may decrease.

触媒膜層10は触媒5を含有させた層であって、表面に露出した触媒5の触媒核に還元された銅等が析出し金属膜層20が形成される。触媒5としては、パラジウム、銅、銀、ニッケル、コバルト、金などの触媒金属が挙げられる。その中でも、触媒活性が高く酸化されにくいパラジウムが最も好ましい。触媒5を樹脂バインダー等に含有させ、センシタイジング法やキャタリスト法などの方法により、触媒膜層10の表面を触媒活性が高い状態にしておくとよい。 The catalyst film layer 10 is a layer containing the catalyst 5, and the reduced copper or the like is deposited on the catalyst nuclei of the catalyst 5 exposed on the surface to form the metal film layer 20 . Examples of the catalyst 5 include catalytic metals such as palladium, copper, silver, nickel, cobalt and gold. Among them, palladium is most preferable because it has high catalytic activity and is hardly oxidized. The catalyst 5 may be contained in a resin binder or the like, and the surface of the catalyst film layer 10 may be kept in a high catalytic activity state by a method such as a sensitizing method or a catalyst method.

メッキ膜25は、電解メッキまたは無電解メッキのいずれで形成しても構わないが、金属膜層20よりも耐食性に優れていることが必要であり、着色や彩度が少なく、光沢の少ないマット調の膜に形成するのが好ましい。そのようなメッキ膜の例としては、ニッケルメッキ膜、スズメッキ膜、ロジウムメッキ膜、パラジウムメッキ膜、銅−スズ−亜鉛の合金メッキ膜などが挙げられる。 The plating film 25 may be formed by either electroplating or electroless plating, but it is required that it has better corrosion resistance than the metal film layer 20, and that it has less coloring or saturation and less matte luster. It is preferable to form a toned film. Examples of such a plating film include a nickel plating film, a tin plating film, a rhodium plating film, a palladium plating film, and a copper-tin-zinc alloy plating film.

レジスト層50は、露光光線が当たった箇所が分解し現像液に溶けて除去されるポジ型、露光光線が当たった箇所が重合により現像液に溶けなくなり露光光線が当たらなかった箇所を除去するネガ型のいずれでも構わない。しかしネガ型のレジスト層50は、前述したように露光光線を長く照射することにより溝1の断面形状を逆楔型のような台形形状にすることができ、最終的に微細な線状パターンのパターン見えを軽減できるメリットがあるので、ネガ型のレジストの方が好ましい。 The resist layer 50 is a positive type in which the portion exposed to the exposure light beam is decomposed and dissolved in the developing solution to be removed, and the portion exposed to the exposure light beam becomes insoluble in the developing solution due to polymerization and is removed in the negative portion to remove the exposure light ray. It can be any type. However, in the negative resist layer 50, the cross-sectional shape of the groove 1 can be made into a trapezoidal shape like an inverted wedge shape by irradiating the exposure light for a long time as described above, and finally a fine linear pattern is formed. A negative resist is preferable because it has the advantage of reducing the appearance of patterns.

レジスト層50の材質としては、オレフィン系、ビニル系、アクリル系、ウレタン系、スチレン系、セルロース系、ポリエステル系、エポキシ系、アルキッド系などの単体樹脂およびこれらの樹脂の混合樹脂や共重合体樹脂などが挙げられる。とくに、ウレタンアクリレート系樹脂やシアノアクリレート系樹脂が好ましい。膜厚は5〜200μm程度で適宜設定するとよい。形成方法は汎用の各種印刷方法のほかコーターや塗装、ディッピングなどが挙げられる。 As the material of the resist layer 50, a simple resin such as an olefin resin, a vinyl resin, an acrylic resin, a urethane resin, a styrene resin, a cellulose resin, a polyester resin, an epoxy resin, an alkyd resin, or a mixed resin or a copolymer resin of these resins is used. And so on. In particular, urethane acrylate resin and cyanoacrylate resin are preferable. The film thickness may be appropriately set to about 5 to 200 μm. The forming method includes various general-purpose printing methods, as well as a coater, painting, dipping, and the like.

レジスト層50に含有される微細な微粒子55は、オレフィン系、ビニル系、アクリル系、ウレタン系、スチレン系、セルロース系、ポリエステル系、エポキシ系、アルキッド系などの硬化または未硬化の樹脂微粒子、アルミナ・酸化亜鉛・酸化チタン、酸化ケイ素などの無機微粒子などが挙げられる。これらの微細な微粒子55は、現像工程における現像液によって溶解してレジスト層50の側面を微細な凹凸形状11に形成するタイプであってもよいし、現像液によっても溶解せずレジスト層50内に残存したままでレジスト層50の側面を微細な凹凸形状11に形成するタイプであってもよい。 The fine particles 55 contained in the resist layer 50 are olefin-based, vinyl-based, acrylic-based, urethane-based, styrene-based, cellulose-based, polyester-based, epoxy-based, alkyd-based cured or uncured resin particles, and alumina. -Inorganic fine particles such as zinc oxide, titanium oxide, and silicon oxide are included. These fine particles 55 may be of a type that dissolves in a developing solution in the developing process to form the side surface of the resist layer 50 into the fine irregularities 11, or may not dissolve in the developing solution and the inside of the resist layer 50. It may be of a type in which the side surface of the resist layer 50 is formed into the fine irregularities 11 while remaining.

溝1の側面の微細な凹凸形状11は、最終的に金属膜層20の側面が艶消し状態にさえ成るようにできればいずれの凹凸形状であっても構わないが、数値的には図6のプロファイルにおいて算術平均粗さRaが0.3〜2μm程度になるのが好ましい。そのためには微細な微粒子55の平均粒子径は0.1〜5μm程度のものが好ましく、この範囲外であると凹凸形状51が細かすぎ又は粗すぎて最終的に金属膜層20の側面に光沢が発現して、透明導電膜のパターン見えを軽減しにくくなる場合がある。なお、微細な微粒子55の形状としては球状・鱗片状などが挙げられる。 The fine concavo-convex shape 11 on the side surface of the groove 1 may be any concavo-convex shape as long as the side surface of the metal film layer 20 can be finally rendered matte, but numerically in FIG. In the profile, it is preferable that the arithmetic mean roughness Ra is about 0.3 to 2 μm. For that purpose, it is preferable that the fine particles 55 have an average particle diameter of about 0.1 to 5 μm. If the average particle diameter is outside this range, the uneven shape 51 is too fine or too rough, and finally the side surface of the metal film layer 20 is glossy. May occur, and it may be difficult to reduce the pattern appearance of the transparent conductive film. The shape of the fine particles 55 may be spherical or scaly.

なお、レジスト層50はそのまま残存させておいても構わないし、剥離除去しても構わない。ただし、剥離除去した場合には透明支持体40に対し金属膜層20を凸部とする厚みの段差が生じており、また金属膜層20の側面はそのままでは金属がむきだしの錆び易い状態になっているため、該段差を少なくして平坦化しかつ該金属膜層20の側面の防錆目的として、直ちに金属膜層20が形成されていない凹部に別の透明の樹脂層を充填しておくことが必要である。 Note that the resist layer 50 may be left as it is or may be peeled and removed. However, in the case of peeling and removing, there is a step difference in thickness with the metal film layer 20 as a convex portion with respect to the transparent support 40, and the side surface of the metal film layer 20 is in a state in which the metal is easily exposed to rust. Therefore, for the purpose of flattening by reducing the step and rust prevention of the side surface of the metal film layer 20 , it is necessary to immediately fill another concave portion in which the metal film layer 20 is not formed with another transparent resin layer. is necessary.

1 線状パターンの溝
10 触媒膜層
11 微細な凹凸形状
20 金属膜層
25 メッキ層
30 積層膜
32 金属膜層側面断面の楔状の形状
40 透明支持体
50 レジスト層
51 基準点
55 微粒子
100 透明導電膜
200 引き回し回路
300 タッチセンサ
400 透明導電性支持体
1 groove of linear pattern 10 catalyst film layer 11 fine uneven shape 20 metal film layer 25 plating layer 30 laminated film 32 wedge shape of metal film layer side cross section 40 transparent support 50 resist layer 51 reference point 55 fine particles 100 transparent conductivity Membrane 200 Routing circuit 300 Touch sensor 400 Transparent conductive support

Claims (3)

表面に触媒膜層が形成された透明支持体の前記触媒膜層上に、または触媒を含有させた透明支持体上に、銅、銀、アルミニウムのいずれかからなる無電解メッキ膜層と、平均粒子径0.1〜5μmの微粒子を含み、側面全体が算術平均粗さRa0.3〜2μmの微細な凹凸形状であるレジスト層とが並列して形成され、前記無電解メッキ膜層の上部にのみニッケル、スズ、ロジウム、パラジウム、銅−スズ−亜鉛の合金のいずれかからなるメッキ膜が形成された、導電性支持体。 On the catalyst film layer of the transparent support having a catalyst film layer formed on the surface, or on a transparent support containing a catalyst, an electroless plating film layer made of any one of copper, silver and aluminum, and an average. A resist layer containing fine particles having a particle diameter of 0.1 to 5 μm and having fine irregularities with the arithmetic average roughness Ra of 0.3 to 2 μm on the entire side surface is formed in parallel and is formed on the electroless plating film layer. A conductive support, on which a plated film made of any one of nickel, tin, rhodium, palladium, and copper-tin-zinc alloy is formed. 前記無電解メッキ膜層は、線幅が0.5〜10μmで線間が前記線幅の10〜1000倍のメッシュ状またはハニカム状の微細な線状パターンからなる透明導電膜である、請求項1に記載の導電性支持体。 The electroless plating film layer is a transparent conductive film having a line width of 0.5 to 10 μm and a space between lines having a fine mesh-like or honeycomb-like linear pattern having a line width of 10 to 1000 times the line width. 1. The conductive support according to 1. 表面に触媒膜層が形成された透明支持体の前記触媒膜層上に、または触媒を含有させた透明支持体上に、銅、銀、アルミニウムのいずれかからなる無電解メッキ膜層と、平均粒子径0.1〜5μmの微粒子を含み、側面全体が算術平均粗さRa0.3〜2μmの微細な凹凸形状であるレジスト層とを並列して形成した後、前記レジスト層を剥離せず残したままで前記無電解メッキ膜層の上部にのみ、ニッケル、スズ、ロジウム、パラジウム、銅−スズ−亜鉛の合金のいずれかからなるメッキ膜を形成する、導電性支持体の製造方法。 On the catalyst film layer of the transparent support having a catalyst film layer formed on the surface, or on a transparent support containing a catalyst, an electroless plating film layer made of any one of copper, silver and aluminum, and an average. After forming in parallel with a resist layer containing fine particles having a particle diameter of 0.1 to 5 μm and having a fine irregular shape with an arithmetic average roughness Ra of 0.3 to 2 μm on the entire side surface, the resist layer is left without peeling. A method for producing a conductive support, wherein a plating film made of any one of nickel, tin, rhodium, palladium, and a copper-tin-zinc alloy is formed only on the electroless plating film layer as it is.
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