JP6742604B2 - 照明光学系、露光装置、およびデバイス製造方法 - Google Patents
照明光学系、露光装置、およびデバイス製造方法 Download PDFInfo
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- JP6742604B2 JP6742604B2 JP2019109232A JP2019109232A JP6742604B2 JP 6742604 B2 JP6742604 B2 JP 6742604B2 JP 2019109232 A JP2019109232 A JP 2019109232A JP 2019109232 A JP2019109232 A JP 2019109232A JP 6742604 B2 JP6742604 B2 JP 6742604B2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0927—Systems for changing the beam intensity distribution, e.g. Gaussian to top-hat
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
- G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3083—Birefringent or phase retarding elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Polarising Elements (AREA)
- Microscoopes, Condenser (AREA)
- Lenses (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
第1面に配列されて個別に制御される複数の光学要素を有する第1空間光変調器と、
前記第1面よりも前記被照射面側の光路中に配置されて、前記照明光学系の光軸を横切る面内の第1領域を通過する第1光束に、前記横切る面内における前記第1領域とは異なる第2領域を通過する第2光束とは異なる偏光状態の変化を与える偏光部材と、
前記第1面よりも前記被照射面側の前記光路中または前記第1面よりも前記光源側の光路中の第2面に配列されて個別に制御される複数の光学要素を有し、前記照明光学系の照明瞳に光強度分布を可変的に形成する第2空間光変調器とを備えていることを特徴とする照明光学系を提供する。
前記所定のパターンが転写された前記感光性基板を現像し、前記所定のパターンに対応する形状のマスク層を前記感光性基板の表面に形成することと、
前記マスク層を介して前記感光性基板の表面を加工することと、を含むことを特徴とするデバイス製造方法を提供する。
1 ビーム送光部
2,4 空間光変調器
3 再結像光学系
5,5A〜5D 偏光部材
51a〜51d 1/2波長板
51e デポラライザ
6,7 リレー光学系
8 マイクロフライアイレンズ
9 コンデンサー光学系
10 マスクブラインド
11 結像光学系
DTr,DTw 瞳強度分布計測部
CR 制御系
M マスク
MS マスクステージ
PL 投影光学系
W ウェハ
WS ウェハステージ
Claims (7)
- 光源からの光で被照射面を照明する照明光学系において、
前記光源からの光が入射する複数の光学要素を有する第1空間光変調器と、
前記第1空間光変調器からの光のうち前記照明光学系の光軸に関して互いに異なる位置を通過する第1光および第2光の偏光状態を互いに異なる偏光状態にするために、前記第1光が入射する第1偏光素子と前記第2光が入射する第2偏光素子とを有する偏光部材と、
前記偏光部材からの前記第1光および前記第2光が入射する複数の光学要素を有する第2空間光変調器と、
前記第1空間光変調器と前記第2空間光変調器との間に配置された再結像光学系とを備え、
前記偏光部材は前記再結像光学系の瞳位置またはその近傍に配置され、
前記第1偏光素子の入射面の面積と前記第2偏光素子の入射面の面積とは互いに異なる照明光学系。 - 前記再結像光学系は、前記第1空間光変調器と前記偏光部材との間に配置され、前記第1空間光変調器からの光を集光する集光光学系を備える、請求項1に記載の照明光学系。
- 前記第1偏光素子の前記入射面における前記第1光の位置および前記第2偏光素子の前記入射面における前記第2光の位置を制御するために、前記第1空間光変調器を制御する制御部を備える、請求項1または2に記載の照明光学系。
- 前記第2空間光変調器からの光を集光して、照明瞳面に瞳強度分布を形成する分布形成光学系を備える、請求項1乃至3のいずれか一項に記載の照明光学系。
- 前記偏光部材は、旋光子および波長板の少なくとも一方を有する請求項1乃至4のいずれか一項に記載の照明光学系。
- パターンを照明するための請求項1乃至5のいずれか一項に記載の照明光学系を備え、前記パターンを感光性基板に露光する露光装置。
- 請求項6に記載の露光装置を用いて、前記パターンを前記感光性基板に露光することと、
前記パターンが転写された前記感光性基板を現像し、前記パターンに対応する形状のマスク層を前記感光性基板の表面に形成することと、
前記マスク層を介して前記感光性基板の表面を加工することと、を含むデバイス製造方法。
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161496234P | 2011-06-13 | 2011-06-13 | |
| US61/496,234 | 2011-06-13 |
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| JP2017125694A Division JP6583741B2 (ja) | 2011-06-13 | 2017-06-28 | 照明光学系、露光装置、およびデバイス製造方法 |
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| JP2019185052A JP2019185052A (ja) | 2019-10-24 |
| JP6742604B2 true JP6742604B2 (ja) | 2020-08-19 |
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| JP2016073847A Active JP6168187B2 (ja) | 2011-06-13 | 2016-04-01 | 照明光学系、露光装置、露光方法、およびデバイス製造方法 |
| JP2017125694A Active JP6583741B2 (ja) | 2011-06-13 | 2017-06-28 | 照明光学系、露光装置、およびデバイス製造方法 |
| JP2019109232A Active JP6742604B2 (ja) | 2011-06-13 | 2019-06-12 | 照明光学系、露光装置、およびデバイス製造方法 |
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| JP2016073847A Active JP6168187B2 (ja) | 2011-06-13 | 2016-04-01 | 照明光学系、露光装置、露光方法、およびデバイス製造方法 |
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| US (3) | US9523918B2 (ja) |
| EP (2) | EP3553604B1 (ja) |
| JP (4) | JP5910890B2 (ja) |
| KR (2) | KR102066825B1 (ja) |
| TW (6) | TWI587002B (ja) |
| WO (1) | WO2012172705A1 (ja) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6020834B2 (ja) | 2011-06-07 | 2016-11-02 | 株式会社ニコン | 照明光学系、露光装置、およびデバイス製造方法 |
| US9638906B2 (en) | 2013-11-22 | 2017-05-02 | Nikon Corporation | Catadioptric imaging systems for digital scanner |
| US9703085B2 (en) | 2013-11-22 | 2017-07-11 | Nikon Corporation | Catadioptric imaging systems for digital scanner |
| JP7208162B2 (ja) | 2017-05-11 | 2023-01-18 | シューラット テクノロジーズ,インク. | 付加製造最適化のためのパターン化された光の固体ルーティング |
| US11014302B2 (en) | 2017-05-11 | 2021-05-25 | Seurat Technologies, Inc. | Switchyard beam routing of patterned light for additive manufacturing |
| US10712546B1 (en) | 2017-10-16 | 2020-07-14 | Keysight Technologies, Inc. | Illumination source for structured illumination microscopy |
| JP7210249B2 (ja) * | 2018-11-30 | 2023-01-23 | キヤノン株式会社 | 光源装置、照明装置、露光装置及び物品の製造方法 |
| DE102019201280A1 (de) * | 2019-01-31 | 2020-08-06 | Trumpf Laser Gmbh | Anordnung und Verfahren zum Formen eines Laserstrahls |
| CN117908338A (zh) * | 2019-03-29 | 2024-04-19 | 株式会社尼康 | 曝光装置、照明光学系统以及元件制造方法 |
Family Cites Families (60)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5312513A (en) | 1992-04-03 | 1994-05-17 | Texas Instruments Incorporated | Methods of forming multiple phase light modulators |
| JP3246615B2 (ja) | 1992-07-27 | 2002-01-15 | 株式会社ニコン | 照明光学装置、露光装置、及び露光方法 |
| JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
| RU2084941C1 (ru) | 1996-05-06 | 1997-07-20 | Йелстаун Корпорейшн Н.В. | Адаптивный оптический модуль |
| JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
| US5867302A (en) | 1997-08-07 | 1999-02-02 | Sandia Corporation | Bistable microelectromechanical actuator |
| KR100841147B1 (ko) | 1998-03-11 | 2008-06-24 | 가부시키가이샤 니콘 | 레이저 장치, 자외광 조사 장치 및 방법, 물체의 패턴 검출장치 및 방법 |
| WO1999049504A1 (fr) | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
| WO2001035168A1 (en) | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Interference lithography utilizing phase-locked scanning beams |
| SE0100336L (sv) | 2001-02-05 | 2002-08-06 | Micronic Laser Systems Ab | Adresseringsmetod och apparat som använder densamma tekniskt område |
| US6480320B2 (en) | 2001-02-07 | 2002-11-12 | Transparent Optical, Inc. | Microelectromechanical mirror and mirror array |
| EP1364257A1 (en) | 2001-02-27 | 2003-11-26 | ASML US, Inc. | Simultaneous imaging of two reticles |
| US6600591B2 (en) | 2001-06-12 | 2003-07-29 | Network Photonics, Inc. | Micromirror array having adjustable mirror angles |
| US6900915B2 (en) | 2001-11-14 | 2005-05-31 | Ricoh Company, Ltd. | Light deflecting method and apparatus efficiently using a floating mirror |
| US20050095749A1 (en) | 2002-04-29 | 2005-05-05 | Mathias Krellmann | Device for protecting a chip and method for operating a chip |
| JP4324957B2 (ja) | 2002-05-27 | 2009-09-02 | 株式会社ニコン | 照明光学装置、露光装置および露光方法 |
| WO2004005998A1 (en) | 2002-07-04 | 2004-01-15 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method and apparatus for controlling deformable actuators |
| US6733144B2 (en) | 2002-09-27 | 2004-05-11 | Intel Corporation | Shock protectors for micro-mechanical systems |
| KR100585476B1 (ko) | 2002-11-12 | 2006-06-07 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 디바이스 제조방법 |
| EP1420298B1 (en) | 2002-11-12 | 2013-02-20 | ASML Netherlands B.V. | Lithographic apparatus |
| ATE424026T1 (de) | 2002-12-13 | 2009-03-15 | Koninkl Philips Electronics Nv | Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht |
| US6891655B2 (en) | 2003-01-02 | 2005-05-10 | Micronic Laser Systems Ab | High energy, low energy density, radiation-resistant optics used with micro-electromechanical devices |
| US7095546B2 (en) | 2003-04-24 | 2006-08-22 | Metconnex Canada Inc. | Micro-electro-mechanical-system two dimensional mirror with articulated suspension structures for high fill factor arrays |
| US7295726B1 (en) | 2003-12-02 | 2007-11-13 | Adriatic Research Institute | Gimbal-less micro-electro-mechanical-system tip-tilt and tip-tilt-piston actuators and a method for forming the same |
| JP4599936B2 (ja) | 2004-08-17 | 2010-12-15 | 株式会社ニコン | 照明光学装置、照明光学装置の調整方法、露光装置、および露光方法 |
| JP4335114B2 (ja) | 2004-10-18 | 2009-09-30 | 日本碍子株式会社 | マイクロミラーデバイス |
| TWI453796B (zh) | 2005-01-21 | 2014-09-21 | 尼康股份有限公司 | 偏光變更單元以及元件製造方法 |
| JP4858439B2 (ja) | 2005-01-25 | 2012-01-18 | 株式会社ニコン | 露光装置及び露光方法並びにマイクロデバイスの製造方法 |
| US7372617B2 (en) | 2005-07-06 | 2008-05-13 | Peter Enoksson | Hidden hinge MEMS device |
| JP2007220767A (ja) | 2006-02-15 | 2007-08-30 | Canon Inc | 露光装置及びデバイス製造方法 |
| DE102008003916A1 (de) | 2007-01-23 | 2008-07-24 | Carl Zeiss Smt Ag | Projektionsbelichtungsanlage für die Mikrolithographie mit Messvorrichtung sowie Verfahren zum Messen einer Bestrahlungsstärkeverteilung |
| WO2008131928A1 (en) * | 2007-04-25 | 2008-11-06 | Carl Zeiss Smt Ag | Illumination system for illuminating a mask in a microlithographic exposure apparatus |
| US7884920B2 (en) | 2007-06-15 | 2011-02-08 | Asml Netherlands B.V. | Lithographic apparatus and pivotable structure assembly |
| TW200904131A (en) * | 2007-07-06 | 2009-01-16 | Chi Mei Comm Systems Inc | Call rejecting mechanism and mathod of using the same |
| DE102007043958B4 (de) * | 2007-09-14 | 2011-08-25 | Carl Zeiss SMT GmbH, 73447 | Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage |
| US20090091730A1 (en) * | 2007-10-03 | 2009-04-09 | Nikon Corporation | Spatial light modulation unit, illumination apparatus, exposure apparatus, and device manufacturing method |
| JP5267029B2 (ja) | 2007-10-12 | 2013-08-21 | 株式会社ニコン | 照明光学装置、露光装置及びデバイスの製造方法 |
| US8379187B2 (en) | 2007-10-24 | 2013-02-19 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| JP5286744B2 (ja) * | 2007-10-31 | 2013-09-11 | 株式会社ニコン | 空間光変調ユニット、照明光学系、露光装置及びデバイスの製造方法 |
| JP5582287B2 (ja) * | 2007-11-06 | 2014-09-03 | 株式会社ニコン | 照明光学装置及び露光装置 |
| WO2009060745A1 (ja) * | 2007-11-06 | 2009-05-14 | Nikon Corporation | 制御装置、露光方法、及び露光装置 |
| JP5326259B2 (ja) * | 2007-11-08 | 2013-10-30 | 株式会社ニコン | 照明光学装置、露光装置、およびデバイス製造方法 |
| DE102008049556B4 (de) | 2008-09-30 | 2011-07-07 | Carl Zeiss SMT GmbH, 73447 | Mikrolithographische Projektionsbelichtungsanlage |
| JP5365982B2 (ja) * | 2008-10-02 | 2013-12-11 | 株式会社ニコン | 照明光学系、露光装置、およびデバイス製造方法 |
| DE102008050446B4 (de) | 2008-10-08 | 2011-07-28 | Carl Zeiss SMT GmbH, 73447 | Verfahren und Vorrichtungen zur Ansteuerung von Mikrospiegeln |
| WO2010044307A1 (ja) * | 2008-10-15 | 2010-04-22 | 株式会社ニコン | 照明光学系、露光装置、およびデバイス製造方法 |
| DE102008054844B4 (de) * | 2008-12-17 | 2010-09-23 | Carl Zeiss Smt Ag | Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage, sowie mikrolithographisches Projektionsbelichtungsverfahren |
| JP2010272640A (ja) * | 2009-05-20 | 2010-12-02 | Nikon Corp | 照明装置、露光装置、及びデバイス製造方法 |
| JP5403244B2 (ja) * | 2009-07-16 | 2014-01-29 | 株式会社ニコン | 空間光変調ユニット、照明光学系、露光装置、およびデバイス製造方法 |
| US20110037962A1 (en) * | 2009-08-17 | 2011-02-17 | Nikon Corporation | Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method |
| JP2011114041A (ja) * | 2009-11-25 | 2011-06-09 | Nikon Corp | 光束分割装置、空間光変調ユニット、照明光学系、露光装置、およびデバイス製造方法 |
| WO2011096453A1 (ja) * | 2010-02-03 | 2011-08-11 | 株式会社ニコン | 照明光学装置、照明方法、並びに露光方法及び装置 |
| US9187774B2 (en) * | 2010-02-26 | 2015-11-17 | The Regents Of The University Of California | Compositions and methods for the production of L-homoalanine |
| DE102010029339A1 (de) | 2010-05-27 | 2011-12-01 | Carl Zeiss Smt Gmbh | Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren |
| KR101928976B1 (ko) * | 2010-12-13 | 2018-12-13 | 가부시키가이샤 니콘 | 공간 광변조기, 노광 장치, 디바이스 제조 방법 |
| JP6020834B2 (ja) * | 2011-06-07 | 2016-11-02 | 株式会社ニコン | 照明光学系、露光装置、およびデバイス製造方法 |
| WO2013039240A1 (ja) * | 2011-09-16 | 2013-03-21 | 株式会社ニコン | 照明光学装置、光学系ユニット、照明方法、並びに露光方法及び装置 |
| US9732934B2 (en) * | 2011-10-28 | 2017-08-15 | Nikon Corporation | Illumination device for optimizing polarization in an illumination pupil |
| WO2013108560A1 (ja) * | 2012-01-18 | 2013-07-25 | 株式会社ニコン | 空間光変調器の駆動方法、露光用パターンの生成方法、並びに露光方法及び装置 |
| WO2019194281A1 (ja) | 2018-04-05 | 2019-10-10 | 株式会社トクヤマ | フォトクロミック接着性組成物、フォトクロミック積層体、及び該フォトクロミック積層体を用いた光学物品 |
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