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JP6754530B2 - Film formation equipment, film formation method, and solar cell manufacturing method - Google Patents
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JP6754530B2 - Film formation equipment, film formation method, and solar cell manufacturing method - Google Patents

Film formation equipment, film formation method, and solar cell manufacturing method Download PDF

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JP6754530B2
JP6754530B2 JP2016173636A JP2016173636A JP6754530B2 JP 6754530 B2 JP6754530 B2 JP 6754530B2 JP 2016173636 A JP2016173636 A JP 2016173636A JP 2016173636 A JP2016173636 A JP 2016173636A JP 6754530 B2 JP6754530 B2 JP 6754530B2
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substrate
transport
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substrate cage
film forming
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JP2018040029A (en
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淳介 松崎
淳介 松崎
高橋 明久
明久 高橋
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Ulvac Inc
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568Transferring the substrates through a series of coating stations
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
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    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/16Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3464Sputtering using more than one target
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/541Heating or cooling of the substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/206Electrodes for devices having potential barriers
    • H10F77/211Electrodes for devices having potential barriers for photovoltaic cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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Description

本発明は、真空中で基板の片面上にスパッタリングによって成膜を行う成膜装置の技術に関し、特にヘテロ接合型太陽電池用の基板の片面上に金属層を形成する技術に関する。 The present invention relates to a technique of a film forming apparatus for forming a film on one side of a substrate in vacuum by sputtering, and particularly to a technique of forming a metal layer on one side of a substrate for a heterojunction type solar cell.

近年、クリーンで安全なエネルギー源として太陽電池が実用化されているが、その中でも、ヘテロ接合型の太陽電池に注目が集まっている。
ヘテロ接合型太陽電池は、単結晶シリコン太陽電池と比較して変換効率が高く、また、アモルファスシリコン層を用いているため、シリコンの使用量を減らすことができる等の利点がある。
In recent years, solar cells have been put into practical use as a clean and safe energy source, and among them, heterojunction type solar cells are attracting attention.
The heterojunction type solar cell has advantages such as higher conversion efficiency than a single crystal silicon solar cell and the use of an amorphous silicon layer, so that the amount of silicon used can be reduced.

近年、ヘテロ接合型太陽電池セルとしては、受光面に電極を有しておらず、受光面と反対側の裏側面に裏面電極を有する所謂バックコンタクト構造のものが提案されている。
この裏面電極は、金属からなりスパッタリングによる成膜で形成されるものであるが、スパッタリングによって金属層を形成する際には、かなりの高温になるため、他の膜に対する影響を回避するため、成膜の際(前後)に冷却を行う必要がある。
In recent years, as a heterojunction type solar cell, a so-called back contact structure having no electrode on the light receiving surface and having a back electrode on the back surface opposite to the light receiving surface has been proposed.
This back electrode is made of metal and is formed by forming a film by sputtering. However, when the metal layer is formed by sputtering, the temperature becomes considerably high, so that it is formed in order to avoid the influence on other films. It is necessary to cool the film (before and after).

しかし、金属層が形成された基板に対して冷却を行う場合、金属層に対して直接冷却を行うことは困難であるとともに、金属層の放射率が低いことに起因して、間接的に冷却を行うことも効率が悪いという問題がある。
また、ヘテロ接合型太陽電池として受光面に金属からなる電極層を有する場合であっても、同様の課題がある。
However, when cooling the substrate on which the metal layer is formed, it is difficult to directly cool the metal layer and indirectly cool due to the low emissivity of the metal layer. There is also the problem that it is inefficient to do.
Further, even when the heterojunction type solar cell has an electrode layer made of metal on the light receiving surface, there is a similar problem.

このような問題は、電極層の厚さを厚く形成する場合において、繰り返し金属層の成膜を行う必要があることから、重要な課題となっている。
そして、上述した課題は、ヘテロ接合型太陽電池の成膜対象基板上に金属層を形成する場合のみならず、成膜対象基板上に金属からなるスパッタ膜を形成する場合にも生ずるものである。
Such a problem has become an important issue because it is necessary to repeatedly form a metal layer when the electrode layer is formed to be thick.
The above-mentioned problems occur not only when the metal layer is formed on the film-forming target substrate of the heterojunction solar cell, but also when the sputter film made of metal is formed on the film-forming target substrate. ..

特開2011−146528号公報Japanese Unexamined Patent Publication No. 2011-146528

本発明は、このような従来の技術の課題を考慮してなされたもので、その目的とするところは、成膜対象基板上に金属層をスパッタリングによって形成する場合に効率良く確実に冷却を行うことができる技術を提供することにある。 The present invention has been made in consideration of such problems of the prior art, and an object of the present invention is to efficiently and reliably cool a metal layer when a metal layer is formed on a film-forming target substrate by sputtering. It is to provide the technology that can be done.

また、本発明の他の目的は、成膜対象基板上に金属からなる裏面電極又は表面電極をスパッタリングによって形成する場合に効率良く確実に冷却を行うことができるヘテロ接合型太陽電池の製造技術を提供することにある。 Another object of the present invention is a technique for manufacturing a heterojunction solar cell capable of efficiently and surely cooling when a back electrode or a front electrode made of metal is formed on a substrate to be filmed by sputtering. To provide.

上記目的を達成するためになされた本発明は、単一の真空雰囲気が形成される真空槽と、前記真空槽内に設けられ、基板保持器に保持された成膜対象基板に対して第1面側から冷却を行う冷却領域と、前記真空槽内に設けられ、前記基板保持器に保持された前記成膜対象基板の第2面上に金属層の成膜を行うスパッタ源を有する金属層成膜領域と、鉛直面に対する投影形状が一連の環状となるように形成され、前記金属層成膜領域及び前記冷却領域を通過するように設けられた搬送経路と、前記基板保持器を水平にした状態で前記搬送経路に沿って搬送する基板保持器搬送機構とを備え、前記基板保持器搬送機構は、前記基板保持器を前記搬送経路に沿って所定方向に搬送する第1の搬送部と、前記基板保持器を前記搬送経路に沿って前記第1の搬送部の搬送方向と反対方向に搬送する第2の搬送部と、前記基板保持器を上下関係を維持した状態で前記第1の搬送部から前記第2の搬送部に向って折り返して搬送する搬送折り返し部とを有し、前記第1の搬送部が、前記金属層成膜領域及び前記冷却領域のうち一方を通過し、かつ、前記第2の搬送部が、前記金属層成膜領域及び前記冷却領域のうち他方を通過するように設けられている成膜装置である。
また、本発明は、単一の真空雰囲気が形成される真空槽と、前記真空槽内に設けられ、基板保持器に保持された成膜対象基板の第1面上に透明導電酸化物層の成膜を行うスパッタ源を有する第1の透明導電酸化物層成膜領域と、前記真空槽内に設けられ、前記基板保持器に保持された前記成膜対象基板の第2面上に透明導電酸化物層の成膜を行うスパッタ源を有する第2の透明導電酸化物層成膜領域と、前記真空槽内に設けられ、前記基板保持器に保持された前記成膜対象基板に対して第2面側から冷却を行う冷却領域と、前記真空槽内に設けられ、前記基板保持器に保持された前記成膜対象基板の第1面上に金属層の成膜を行うスパッタ源を有する金属層成膜領域と、鉛直面に対する投影形状が一連の環状となるように形成され、前記第1及び第2の透明導電酸化物層成膜領域、前記金属層成膜領域及び前記冷却領域を通過するように設けられた搬送経路と、前記基板保持器を水平にした状態で前記搬送経路に沿って搬送する基板保持器搬送機構とを備え、前記基板保持器搬送機構は、前記基板保持器を前記搬送経路に沿って所定方向に搬送する第1の搬送部と、前記基板保持器を前記搬送経路に沿って前記第1の搬送部の搬送方向と反対方向に搬送する第2の搬送部と、前記基板保持器を上下関係を維持した状態で前記第1の搬送部から前記第2の搬送部に向って折り返して搬送する搬送折り返し部とを有し、前記第1の搬送部が、前記第1及び第2の透明導電酸化物層成膜領域のうち一方を通過し、かつ、前記第2の搬送部が、前記第1及び第2の透明導電酸化物層成膜領域のうち他方を通過するとともに、前記第1の搬送部が、前記金属層成膜領域及び前記冷却領域のうち一方を通過し、かつ、前記第2の搬送部が、前記金属層成膜領域及び前記冷却領域のうち他方を通過するように設けられている成膜装置である。
また、本発明は成膜装置であって、成膜後の成膜対象基板を保持した前記基板保持器を前記基板保持器搬送機構から取り出し、取り出した当該基板保持器を前記基板保持器搬送機構に導入するように構成されている成膜装置である。
また、本発明は成膜装置であって、前記基板保持器は、当該搬送方向に対して直交する方向に複数の成膜対象基板を並べて保持するように構成されている成膜装置である。
また、本発明は上記いずれかの成膜装置を用いた成膜方法であって、前記基板保持器搬送機構の前記第1及び第2の搬送部のうち一方によって前記基板保持器を前記冷却領域を通過するように前記搬送経路に沿って所定方向に搬送し、前記基板保持器に保持された前記成膜対象基板の第1面側から冷却を行う冷却工程と、前記基板保持器搬送機構の前記第1及び第2の搬送部のうち他方によって前記基板保持器を前記金属層成膜領域を通過するように前記搬送経路に沿って前記所定方向と反対方向に搬送し、前記基板保持器に保持された前記成膜対象基板の第2面上にスパッタリングによって金属層の成膜を行う金属層成膜工程とを有する成膜方法である。
また、本発明は前記記載の成膜装置を用いた成膜方法であって、前記基板保持器搬送機構の第1の搬送部によって前記基板保持器を前記第1の透明導電酸化物層成膜領域を通過するように前記搬送経路に沿って所定方向に搬送し、当該基板保持器に保持された成膜対象基板の第1面上にスパッタリングによって第1の透明導電酸化物層を形成する工程と、前記基板保持器搬送機構の第2の搬送部によって前記基板保持器を前記第2の透明導電酸化物層成膜領域を通過するように前記搬送経路に沿って前記所定方向と反対方向に搬送し、当該基板保持器に保持された前記成膜対象基板の第2面上にスパッタリングによって第2の透明導電酸化物層を形成する工程と、前記基板保持器搬送機構の前記第2の搬送部によって前記基板保持器を前記冷却領域を通過するように前記搬送経路に沿って前記所定方向と反対方向に搬送し、前記基板保持器に保持された前記成膜対象基板に対して第2面側から冷却を行う冷却工程と、前記基板保持器搬送機構の前記第1の搬送部によって前記基板保持器を前記金属層成膜領域を通過するように前記搬送経路に沿って前記所定方向に搬送し、前記基板保持器に保持された前記成膜対象基板の第1面上にスパッタリングによって金属層の成膜を行う金属層成膜工程とを有する成膜方法である。
また、本発明は成膜方法であって、成膜後の成膜対象基板を保持した前記基板保持器を前記基板保持器搬送機構から取り出し、取り出した当該基板保持器を前記基板保持器搬送機構に導入し、前記冷却工程及び前記金属層成膜工程を複数回行う工程を有する成膜方法である。
また、本発明は前記記載の成膜装置を用いた太陽電池の製造方法であって、n型単結晶シリコン基板の第1面上に、アモルファスシリコン層及びテクスチャー構造の反射防止膜が順次設けられるとともに、前記n型単結晶シリコン基板の第2面上に、i型アモルファスシリコン層及びp型アモルファスシリコン層とn型アモルファスシリコン層が隣接して設けられた成膜対象基板を用意し、前記基板保持器搬送機構の前記第1及び第2の搬送部のうち一方によって前記基板保持器を前記冷却領域を通過するように前記搬送経路に沿って所定方向に搬送し、前記基板保持器に保持された前記成膜対象基板に対して第1面側から冷却を行う冷却工程と、前記基板保持器搬送機構の前記第1及び第2の搬送部のうち他方によって前記基板保持器を前記金属層成膜領域を通過するように前記搬送経路に沿って前記所定方向と反対方向に搬送し、前記基板保持器に保持された前記成膜対象基板の第2面上にスパッタリングによって裏面電極用の金属層の成膜を行う金属層成膜工程とを有する太陽電池の製造方法である。
また、本発明は前記記載の成膜装置を用いた太陽電池の製造方法であって、n型結晶シリコン基板の第1面上に、i型アモルファスシリコン層及びp型アモルファスシリコン層が順次設けられるとともに、前記n型結晶シリコン基板の第2面上に、i型アモルファスシリコン層及びn型アモルファスシリコン層が順次設けられた成膜対象基板を用意し、前記基板保持器搬送機構の第1の搬送部によって前記基板保持器を前記第1の透明導電酸化物層成膜領域を通過するように前記搬送経路に沿って所定方向に搬送し、当該基板保持器に保持された成膜対象基板の第1面上にスパッタリングによって第1の透明導電酸化物層を形成する工程と、前記基板保持器搬送機構の第2の搬送部によって前記基板保持器を前記第2の透明導電酸化物層成膜領域を通過するように前記搬送経路に沿って前記所定方向と反対方向に搬送し、当該基板保持器に保持された前記成膜対象基板の第2面上にスパッタリングによって第2の透明導電酸化物層を形成する工程と、前記基板保持器搬送機構の前記第2の搬送部によって前記基板保持器を前記冷却領域を通過するように前記搬送経路に沿って前記所定方向と反対方向に搬送し、前記基板保持器に保持された前記成膜対象基板に対して第2面側から冷却を行う冷却工程と、前記基板保持器搬送機構の前記第1の搬送部によって前記基板保持器を前記金属層成膜領域を通過するように前記搬送経路に沿って前記所定方向に搬送し、前記基板保持器に保持された前記成膜対象基板の第1面上にスパッタリングによって表面電極用の金属層の成膜を行う金属層成膜工程とを有する太陽電池の製造方法である。
The present invention made to achieve the above object is the first with respect to a vacuum chamber in which a single vacuum atmosphere is formed and a film-forming target substrate provided in the vacuum chamber and held in a substrate cage. A metal layer having a cooling region for cooling from the surface side and a sputter source for forming a metal layer on the second surface of the film-forming target substrate provided in the vacuum chamber and held in the substrate cage. The film-forming region and the transport path provided so as to form a series of annular projection shapes with respect to the vertical plane and passing through the metal layer film-forming region and the cooling region, and the substrate cage are horizontally arranged. The membrane cage transport mechanism is provided with a substrate cage transport mechanism that transports the substrate cage along the transport path in a state of being carried, and the substrate cage transport mechanism includes a first transport unit that transports the substrate cage in a predetermined direction along the transport path. The first transport unit, which transports the substrate cage in a direction opposite to the transport direction of the first transport unit along the transport path, and the substrate cage in a state where the substrate cage is maintained in a vertical relationship. It has a transport-folded portion that folds back and transports from the transport unit toward the second transport unit, and the first transport unit passes through one of the metal layer film forming region and the cooling region, and The second transporting unit is a film forming apparatus provided so as to pass through the other of the metal layer film forming region and the cooling region.
Further, the present invention comprises a vacuum chamber in which a single vacuum atmosphere is formed, and a transparent conductive oxide layer on the first surface of a substrate to be deposited, which is provided in the vacuum chamber and held in a substrate cage. Transparent conductivity on a first transparent conductive oxide layer film forming region having a sputter source for forming a film and a second surface of the film forming target substrate provided in the vacuum chamber and held in the substrate cage. A second transparent conductive oxide layer film forming region having a sputter source for forming an oxide layer, and a film forming target substrate provided in the vacuum chamber and held in the substrate cage. A metal having a cooling region for cooling from two surfaces and a sputter source for forming a metal layer on the first surface of the substrate to be deposited, which is provided in the vacuum chamber and is held by the substrate cage. The layer film forming region and the projected shape with respect to the vertical surface are formed so as to form a series of rings, and pass through the first and second transparent conductive oxide layer forming regions, the metal layer forming region, and the cooling region. The substrate cage transport mechanism includes a transport path provided so as to carry the substrate cage and a substrate cage transport mechanism that transports the substrate cage horizontally along the transport path. The substrate cage transport mechanism holds the substrate cage. A first transport unit that transports the substrate cage in a predetermined direction along the transport path, and a second transport unit that transports the substrate cage along the transport path in a direction opposite to the transport direction of the first transport unit. The substrate cage is provided with a transport folding portion that folds back and transports the substrate cage from the first transport portion toward the second transport portion while maintaining the vertical relationship, and the first transport portion is the said. It passes through one of the first and second transparent conductive oxide layer film forming regions, and the second transporting portion passes through the other of the first and second transparent conductive oxide layer film forming regions. As it passes, the first transport portion passes through one of the metal layer film forming region and the cooling region, and the second transport portion is the metal layer film forming region and the cooling region. It is a film forming apparatus provided so as to pass through the other of them.
Further, the present invention is a film forming apparatus, in which the substrate cage holding the film-forming target substrate after film formation is taken out from the substrate cage transport mechanism, and the taken-out substrate cage is taken out from the substrate cage transport mechanism. It is a film forming apparatus configured to be introduced into.
Further, the present invention is a film forming apparatus, and the substrate cage is a film forming apparatus configured to arrange and hold a plurality of film forming target substrates in a direction orthogonal to the transport direction.
Further, the present invention is a film forming method using any of the above-mentioned film forming devices, in which the substrate cage is cooled by one of the first and second conveying portions of the substrate cage conveying mechanism. A cooling step of transporting the substrate in a predetermined direction along the transport path so as to pass through the substrate and cooling from the first surface side of the film-forming target substrate held by the substrate cage, and the substrate cage transport mechanism. The substrate cage is conveyed to the substrate cage by the other of the first and second conveying portions along the transfer path in the direction opposite to the predetermined direction so as to pass through the metal layer film forming region. This is a film forming method including a metal layer forming step of forming a metal layer on the second surface of the held substrate to be formed by sputtering.
Further, the present invention is a film forming method using the film forming apparatus described above, wherein the substrate cage is formed into the first transparent conductive oxide layer by the first conveying portion of the substrate cage conveying mechanism. A step of transporting a first transparent conductive oxide layer by sputtering on the first surface of a substrate to be filmed, which is transported in a predetermined direction along the transport path so as to pass through a region and is held by the substrate cage. In the direction opposite to the predetermined direction along the transport path so that the substrate cage passes through the second transparent conductive oxide layer film forming region by the second transport portion of the substrate cage transport mechanism. A step of forming a second transparent conductive oxide layer by sputtering on the second surface of the substrate to be deposited, which is conveyed and held by the substrate cage, and the second transfer of the substrate cage transfer mechanism. The substrate carrier is conveyed by the unit in the direction opposite to the predetermined direction along the transfer path so as to pass through the cooling region, and the second surface with respect to the film-forming target substrate held by the substrate cage. The substrate cage is transported in the predetermined direction along the transport path so as to pass through the metal layer film forming region by the cooling step of cooling from the side and the first transport portion of the substrate cage transport mechanism. This is a film forming method including a metal layer film forming step of forming a metal layer on the first surface of the film forming target substrate held by the substrate cage by sputtering.
Further, the present invention is a film forming method, in which the substrate cage holding the film-forming target substrate after film formation is taken out from the substrate cage transport mechanism, and the taken-out substrate cage is taken out from the substrate cage transport mechanism. This is a film forming method having a step of performing the cooling step and the metal layer film forming step a plurality of times.
Further, the present invention is a method for manufacturing a solar cell using the film forming apparatus described above, wherein an amorphous silicon layer and an antireflection film having a texture structure are sequentially provided on the first surface of an n-type single crystal silicon substrate. At the same time, a film-forming target substrate in which an i-type amorphous silicon layer, a p-type amorphous silicon layer, and an n-type amorphous silicon layer are provided adjacent to each other on the second surface of the n-type single crystal silicon substrate is prepared. The substrate cage is transported in a predetermined direction along the transport path so as to pass through the cooling region by one of the first and second transport portions of the cage transport mechanism, and is held by the substrate cage. The substrate cage is layered with the metal by a cooling step of cooling the film-forming target substrate from the first surface side and the other of the first and second transport portions of the substrate cage transport mechanism. A metal layer for a back surface electrode is transported along the transport path so as to pass through the film region in a direction opposite to the predetermined direction, and is carried on the second surface of the film-forming target substrate held by the substrate cage by sputtering. This is a method for manufacturing a solar cell, which comprises a metal layer film forming step for forming a film.
Further, the present invention is a method for manufacturing a solar cell using the film forming apparatus described above, in which an i-type amorphous silicon layer and a p-type amorphous silicon layer are sequentially provided on the first surface of an n-type crystalline silicon substrate. At the same time, a film-forming target substrate in which an i-type amorphous silicon layer and an n-type amorphous silicon layer are sequentially provided on the second surface of the n-type crystalline silicon substrate is prepared, and the first transfer of the substrate cage transfer mechanism is performed. The substrate cage is conveyed in a predetermined direction along the transfer path so as to pass through the first transparent conductive oxide layer film forming region, and the film-forming target substrate held by the substrate cage is the first. The process of forming the first transparent conductive oxide layer on one surface by sputtering and the second transporting portion of the substrate cage transport mechanism allow the substrate cage to be formed into the second transparent conductive oxide layer film forming region. A second transparent conductive oxide layer is conveyed on the second surface of the film-forming target substrate held in the substrate cage in a direction opposite to the predetermined direction along the conveying path so as to pass through. The substrate cage is conveyed in the direction opposite to the predetermined direction along the transfer path so as to pass through the cooling region by the step of forming the substrate cage and the second transfer portion of the substrate cage transfer mechanism. The substrate cage is metal-layered by a cooling step of cooling the film-forming target substrate held by the substrate cage from the second surface side and the first transport portion of the substrate cage transport mechanism. A metal layer for a surface electrode is formed by sputtering on the first surface of the film-forming target substrate held in the substrate cage after being transported in the predetermined direction along the transport path so as to pass through the film region. This is a method for manufacturing a solar cell, which comprises a metal layer film forming step.

第1の発明に係る成膜装置では、単一の真空雰囲気が形成される真空槽内に、基板保持器を搬送経路に沿って所定方向に搬送する第1の搬送部と、基板保持器を搬送経路に沿って第1の搬送部の搬送方向と反対方向に搬送する第2の搬送部と、基板保持器を上下関係を維持した状態で第1の搬送部から第2の搬送部に向って折り返して搬送する搬送折り返し部とを有する基板保持器搬送機構を備え、第1の搬送部が、金属層成膜領域及び冷却領域のうち一方を通過し、かつ、第2の搬送部が、金属層成膜領域及び冷却領域のうち他方を通過するように設けられている。 In the film forming apparatus according to the first invention, a first transport unit that transports the substrate cage in a predetermined direction along a transport path and a substrate cage are provided in a vacuum chamber in which a single vacuum atmosphere is formed. From the first transport section to the second transport section while maintaining the vertical relationship between the second transport section that transports the first transport section in the direction opposite to the transport direction of the first transport section along the transport path and the substrate cage. The substrate cage is provided with a transfer folding mechanism having a transfer folding section, and the first transport section passes through one of the metal layer film forming region and the cooling region, and the second transport section is It is provided so as to pass through the other of the metal layer film forming region and the cooling region.

このような第1の発明では、基板保持器搬送機構において、例えば第1の搬送部によって基板保持器を冷却領域を通過するように搬送経路に沿って所定方向に搬送し、基板保持器に保持された成膜対象基板の第1面側から冷却を行い、かつ、例えば第2の搬送部によって基板保持器を金属層成膜領域を通過するように搬送経路に沿って第1の搬送部の搬送方向と反対方向に搬送し、基板保持器に保持された成膜対象基板の第2面上にスパッタリングによって金属層の成膜を行うことができる。 In such a first invention, in the substrate cage transport mechanism, for example, the substrate cage is transported in a predetermined direction along the transport path so as to pass through the cooling region by the first transport unit, and is held by the substrate cage. Cooling is performed from the first surface side of the film-forming target substrate, and the substrate cage is passed through the metal layer film-forming region by, for example, the second transport section of the first transport section along the transport path. A metal layer can be formed by sputtering on the second surface of the substrate to be formed by being conveyed in the direction opposite to the conveying direction and held in the substrate cage.

その結果、第1の発明において、先に成膜対象基板の冷却を行う場合には、十分に冷却された状態の成膜対象基板に対してスパッタリングによって金属層の成膜を行うことにより、成膜時の成膜対象基板の温度上昇を確実に防止することができ、これにより他層の膜に対する影響を抑えることができる。 As a result, in the first invention, when the film-forming target substrate is cooled first, the metal layer is formed by sputtering on the film-forming target substrate in a sufficiently cooled state. It is possible to reliably prevent the temperature rise of the film-forming target substrate at the time of film formation, and thereby suppress the influence on the films of other layers.

また、成膜対象基板の第2面上にスパッタリングによる金属層が形成された成膜対象基板の冷却を行う場合には、放射率が低い金属層側から冷却を行うことなく金属層が形成されていない成膜対象基板の第1面側から冷却を行うことによって、成膜対象基板に対して効率良く冷却を行い、その温度を確実に低下させることができ、これにより成膜対象基板の他層の膜に対する影響を抑えることができる。 Further, when the film-forming target substrate in which the metal layer is formed by sputtering on the second surface of the film-forming target substrate is cooled, the metal layer is formed without cooling from the metal layer side having a low radiation coefficient. By cooling from the first surface side of the film-forming target substrate that has not been formed, the film-forming target substrate can be efficiently cooled and its temperature can be surely lowered. The influence of the layer on the film can be suppressed.

さらに、成膜対象基板上に金属層の厚さを厚く形成する場合には繰り返し金属層の成膜を行う必要があるが、第1の発明によれば、金属層の成膜の際に毎回冷却を行うことができるので、効率良く冷却を行い成膜対象基板の温度上昇を確実に防止することができる。 Further, when the metal layer is formed to be thick on the substrate to be formed, it is necessary to repeatedly form the metal layer. However, according to the first invention, every time the metal layer is formed. Since it can be cooled, it can be efficiently cooled and the temperature rise of the film-forming target substrate can be reliably prevented.

また、第2の発明に係る成膜装置では、単一の真空雰囲気が形成される真空槽内に、基板保持器を搬送経路に沿って所定方向に搬送する第1の搬送部と、基板保持器を搬送経路に沿って第1の搬送部の搬送方向と反対方向に搬送する第2の搬送部と、基板保持器を上下関係を維持した状態で第1の搬送部から第2の搬送部に向って折り返して搬送する搬送折り返し部とを有する基板保持器搬送機構を備え、第1の搬送部が、第1及び第2の透明導電酸化物層成膜領域のうち一方を通過し、かつ、第2の搬送部が、第1及び第2の透明導電酸化物層成膜領域のうち他方を通過するとともに、第1の搬送部が、金属層成膜領域及び冷却領域のうち一方を通過し、かつ、第2の搬送部が、金属層成膜領域及び冷却領域のうち他方を通過するように設けられている。 Further, in the film forming apparatus according to the second invention, the first conveying portion that conveys the substrate cage in a predetermined direction along the conveying path and the substrate holding in the vacuum chamber in which a single vacuum atmosphere is formed. A second transport unit that transports the vessel along the transport path in the direction opposite to the transport direction of the first transport unit, and a second transport unit from the first transport unit to the second transport unit while maintaining the vertical relationship of the substrate cage. A substrate cage having a substrate cage transport mechanism having a transport folded portion for folding and transporting the first transport portion passes through one of the first and second transparent conductive oxide layer film forming regions, and the first transport portion passes through one of the first and second transparent conductive oxide layer film forming regions. , The second transport section passes through the other of the first and second transparent conductive oxide layer film forming regions, and the first transport section passes through one of the metal layer film forming region and the cooling region. Moreover, the second conveying portion is provided so as to pass through the other of the metal layer film forming region and the cooling region.

このような第2の発明では、基板保持器搬送機構において、第1の搬送部及び第2の搬送部を介して基板保持器を第1及び第2の透明導電酸化物層成膜領域を通過するように搬送経路に沿って所定方向及び反対方向に搬送し、基板保持器に保持された成膜対象基板の両面上にスパッタリングによって第1及び第2の透明導電酸化物層の成膜を行い、その後、第2の搬送部によって基板保持器を冷却領域を通過するように搬送経路に沿って所定方向に搬送し、基板保持器に保持された成膜対象基板の第2面側から冷却を行い、かつ、第1の搬送部によって基板保持器を金属層成膜領域を通過するように搬送経路に沿って第2の搬送部の搬送方向と反対方向に搬送し、基板保持器に保持された成膜対象基板の第1面上にスパッタリングによって金属層の成膜を行うことができる。 In such a second invention, in the substrate cage transport mechanism, the substrate cage is passed through the first and second transparent conductive oxide layer film forming regions via the first transport section and the second transport section. The first and second transparent conductive oxide layers are formed by sputtering on both surfaces of the substrate to be deposited, which are conveyed in a predetermined direction and in opposite directions along the conveying path. After that , the substrate cage is transported in a predetermined direction along the transport path so as to pass through the cooling region by the second transport unit, and cooling is performed from the second surface side of the substrate to be filmed held by the substrate cage. In addition , the substrate cage is transported along the transport path in the direction opposite to the transport direction of the second transport portion so as to pass through the metal layer film forming region by the first transport portion, and is held by the substrate cage. A metal layer can be formed on the first surface of the film-forming target substrate by sputtering.

その結果、第2の発明において、基板両面に第1及び第2の透明導電酸化物層が形成された成膜対象基板に対し、先に冷却工程を行う場合には、十分に冷却された状態の成膜対象基板に対してスパッタリングによって金属層の成膜を行うことにより、成膜時の成膜対象基板の温度上昇を確実に防止することができ、これにより他層の膜に対する影響を抑えることができる。 As a result, in the second invention, when the film-forming target substrate on which the first and second transparent conductive oxide layers are formed on both sides of the substrate is first cooled, it is in a sufficiently cooled state. By forming a metal layer on the film-forming target substrate by sputtering, it is possible to reliably prevent the temperature rise of the film-forming target substrate during film formation, thereby suppressing the influence on the films of other layers. be able to.

また、基板両面に第1及び第2の透明導電酸化物層が形成され且つ第1面上にスパッタリングによる金属層が形成された成膜対象基板に対して冷却を行う場合には、放射率が低い金属層側から冷却を行うことなく金属層が形成されていない成膜対象基板の第2面側から冷却を行うことにより、成膜対象基板に対して効率良く冷却を行い、その温度を確実に低下させることができ、これにより成膜対象基板の他層の膜に対する影響を抑えることができる。 Further, when cooling is performed on the film-forming target substrate in which the first and second transparent conductive oxide layers are formed on both surfaces of the substrate and the metal layer is formed by sputtering on the first surface, the radiation coefficient is high. By cooling from the second surface side of the film-forming target substrate on which the metal layer is not formed without cooling from the low metal layer side, the film-forming target substrate is efficiently cooled and its temperature is ensured. As a result, the influence on the film of the other layer of the substrate to be formed can be suppressed.

さらに、成膜対象基板上に金属層の厚さを厚く形成する場合には繰り返し金属層の成膜を行う必要があるが、第2の発明においても、上記第1の発明と同様に金属層の成膜の際に毎回冷却を行うことができるので、効率良く冷却を行い成膜対象基板の温度上昇を確実に防止することができる。 Further, when the metal layer is formed to be thicker on the substrate to be formed, it is necessary to repeatedly form the metal layer. However, in the second invention as well as in the first invention, the metal layer is formed. Since cooling can be performed every time the film is formed, it is possible to efficiently cool the film and reliably prevent the temperature of the film-forming target substrate from rising.

その一方、上述した第1及び第2の発明においては、搬送経路が、鉛直面に対して投影した場合に一連の環状となるように形成されており、金属層の成膜工程と冷却工程を異なる搬送部で行うことによって、成膜対象基板の他層の膜に対する影響を抑えつつ、コンパクトな通過型の成膜装置によって成膜対象基板上に金属層の成膜を行うことができる。 On the other hand, in the above-mentioned first and second inventions, the transport path is formed so as to form a series of rings when projected onto the vertical surface, and the film forming step and the cooling step of the metal layer are performed. By performing this in different transport units, it is possible to form a metal layer on the film-forming target substrate by a compact pass-through type film-forming device while suppressing the influence on the film of another layer of the film-forming target substrate.

そして、このような第1及び第2の発明によれば、成膜対象基板上に金属からなる裏面電極又は表面電極をスパッタリングによって形成する場合に効率良く確実に冷却を行うことができるヘテロ接合型太陽電池の製造技術を提供することができる。 According to the first and second inventions, a heterojunction type capable of efficiently and reliably cooling when a back electrode or a front electrode made of metal is formed on a substrate to be filmed by sputtering. It is possible to provide a manufacturing technique for a solar cell.

一方、第1及び第2の発明において、当該搬送方向に対して直交する方向に複数の成膜対象基板を並べて保持するように構成されている場合には、従来技術のような基板の搬送方向に複数の基板を並べて保持する基板保持器を搬送して成膜を行う場合と比較して、基板保持器の長さ及びこれに伴う余剰スペースを削減することができるので、成膜装置の省スペース化を達成することができる。 On the other hand, in the first and second inventions, when a plurality of film-forming target substrates are arranged and held in a direction orthogonal to the transport direction, the substrate transport direction as in the prior art. Compared with the case where a substrate cage for holding a plurality of substrates side by side is transported to perform film formation, the length of the substrate cage and the excess space associated therewith can be reduced, so that the film forming apparatus can be saved. Space can be achieved.

本発明に係る成膜装置の実施の形態の全体を示す概略構成図Schematic configuration diagram showing the whole embodiment of the film forming apparatus according to the present invention. 本実施の形態における基板保持器搬送機構の概略構成を示す平面図The plan view which shows the schematic structure of the substrate cage transport mechanism in this embodiment. 同基板保持器搬送機構の要部を示す正面図Front view showing the main part of the board cage transport mechanism (a)〜(c):本実施の形態に用いる基板保持器の構成を示すもので、図4(a)は、基板を保持していない状態の平面図、図4(b)は、基板を保持している状態の平面図、図4(c)は、図4(a)のA−A線断面図(A) to (c): The configuration of the substrate cage used in the present embodiment is shown. FIG. 4A is a plan view of a state in which the substrate is not held, and FIG. 4B is a substrate. 4 (c) is a cross-sectional view taken along the line AA of FIG. 4 (a). (a)(b):本実施の形態の基板保持器搬送機構の搬送折り返し部の構成を示すもので、図5(a)は平面図、図5(b)は、図5(a)のB−B線断面図(A) (b): Shows the configuration of the transport folded-back portion of the substrate cage transport mechanism of the present embodiment, FIG. 5 (a) is a plan view, and FIG. 5 (b) is FIG. 5 (a). BB line sectional view 本実施の形態の成膜装置の動作並びに成膜方法の説明図(その1)Explanatory drawing of the operation of the film forming apparatus of this embodiment and the film forming method (No. 1) 同成膜装置の動作並びに成膜方法の説明図(その2)Explanatory drawing of the operation of the film forming apparatus and the film forming method (Part 2) 同成膜装置の動作並びに成膜方法の説明図(その3)Explanatory drawing of the operation of the film forming apparatus and the film forming method (No. 3) (a)(b):本実施の形態の基板保持器搬送機構の動作説明図(その1)(A) (b): Operation explanatory view of the substrate cage transport mechanism of this embodiment (No. 1) (a)〜(c):同基板保持器搬送機構の搬送折り返し部の動作説明図(A) to (c): Operation explanatory view of the transfer folding portion of the substrate cage transfer mechanism. (a)(b):同基板保持器搬送機構の動作説明図(その2)(A) (b): Operation explanatory view of the substrate cage transport mechanism (No. 2) (a)(b):同基板保持器搬送機構の動作説明図(その3)(A) (b): Operation explanatory view of the substrate cage transport mechanism (No. 3) 同成膜装置の動作並びに成膜方法の説明図(その4)Explanatory drawing of the operation of the film forming apparatus and the film forming method (No. 4) 同成膜装置の動作並びに成膜方法の説明図(その5)Explanatory drawing of the operation of the film forming apparatus and the film forming method (No. 5) 同成膜装置の動作並びに成膜方法の説明図(その6)Explanatory drawing of the operation of the film forming apparatus and the film forming method (No. 6) (a)(b):本実施の形態における透明導電酸化物層の形成方法を示す断面工程図(A) (b): Cross-sectional process diagram showing a method of forming a transparent conductive oxide layer in the present embodiment. 基板に対して複数回の成膜を行う場合の動作説明図(その1)Operational explanatory diagram when film formation is performed multiple times on a substrate (Part 1) 基板に対して複数回の成膜を行う場合の動作説明図(その2)Operational explanatory view when film formation is performed multiple times on a substrate (Part 2) 本発明に係る成膜装置の他の実施の形態の全体を示す概略構成図Schematic configuration diagram showing the whole of other embodiments of the film forming apparatus according to the present invention. 同実施の形態における成膜方法の説明図(その1)Explanatory drawing of the film forming method in the same embodiment (No. 1) 同実施の形態における成膜方法の説明図(その2)Explanatory drawing of the film forming method in the same embodiment (Part 2) 同実施の形態における成膜方法の説明図(その3)Explanatory drawing of the film forming method in the same embodiment (No. 3) 同実施の形態における成膜方法の説明図(その4)Explanatory drawing of the film forming method in the same embodiment (No. 4) (a)〜(d):同実施の形態における透明導電酸化物層並びに金属層の形成方法を示す断面工程図(A) to (d): Cross-sectional process chart showing a method of forming a transparent conductive oxide layer and a metal layer in the same embodiment.

以下、本発明の実施の形態を図面を参照して詳細に説明する。
図1は、本発明に係る成膜装置の実施の形態の全体を示す概略構成図である。
また、図2は、本実施の形態における基板保持器搬送機構の概略構成を示す平面図、図3は、同基板保持器搬送機構の要部を示す正面図である。
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a schematic configuration diagram showing the entire embodiment of the film forming apparatus according to the present invention.
Further, FIG. 2 is a plan view showing a schematic configuration of the substrate cage transport mechanism according to the present embodiment, and FIG. 3 is a front view showing a main part of the substrate cage transport mechanism.

さらに、図4(a)〜(c)は、本実施の形態に用いる基板保持器の構成を示すもので、図4(a)は、成膜対象基板(以下、「基板」という。)を保持していない状態の平面図、図4(b)は、基板を保持している状態の平面図、図4(c)は、図4(a)のA−A線断面図である。
さらにまた、図5(a)(b)は、本実施の形態の基板保持器搬送機構の搬送折り返し部の構成を示すもので、図5(a)は平面図、図5(b)は、図5(a)のB−B線断面図ある。
Further, FIGS. 4 (a) to 4 (c) show the configuration of the substrate cage used in the present embodiment, and FIG. 4 (a) shows the substrate to be film-formed (hereinafter referred to as "substrate"). A plan view of the state in which the substrate is not held, FIG. 4 (b) is a plan view of the state in which the substrate is held, and FIG. 4 (c) is a sectional view taken along line AA of FIG. 4 (a).
Furthermore, FIGS. 5 (a) and 5 (b) show a configuration of a transport folding back portion of the substrate cage transport mechanism of the present embodiment, FIG. 5 (a) is a plan view, and FIG. 5 (b) is a plan view. FIG. 5A is a cross-sectional view taken along the line BB of FIG. 5A.

図1に示すように、本実施の形態の成膜装置1は、真空排気装置1aに接続された単一の真空雰囲気が形成される真空槽2を有している。
真空槽2の内部には、後述する基板保持器11を搬送経路に沿って搬送する基板保持器搬送機構3が設けられている。
As shown in FIG. 1, the film forming apparatus 1 of the present embodiment has a vacuum chamber 2 connected to a vacuum exhaust apparatus 1a to form a single vacuum atmosphere.
Inside the vacuum chamber 2, a substrate cage transport mechanism 3 for transporting the substrate cage 11, which will be described later, along a transport path is provided.

この基板保持器搬送機構3は、基板50を保持する基板保持器11を、複数個連続して搬送するように構成されている。
ここで、基板保持器搬送機構3は、その詳細な構成は後述するが、例えばスプロケット等からなる同一径の円形の第1及び第2の駆動輪31、32を有し、これら第1及び第2の駆動輪31、32が、それぞれの回転軸線を平行にした状態で所定距離をおいて配置されている。
The substrate cage transport mechanism 3 is configured to continuously transport a plurality of substrate cages 11 that hold the substrate 50.
Here, the substrate cage transport mechanism 3 has a first and second circular drive wheels 31 and 32 having the same diameter, which are made of, for example, sprockets and the like, and the first and second drive wheels 31 and 32 have the same diameter. The drive wheels 31 and 32 of No. 2 are arranged at a predetermined distance in a state where their respective rotation axes are parallel to each other.

そして、これら第1及び第2の駆動輪31、32に例えばチェーン等からなる一連の搬送駆動部材33が架け渡され、これにより以下に説明するように鉛直面に対して一連の環状となる搬送経路が形成されている。
本実施の形態では、第1及び第2の駆動輪31、32に、図示しない駆動機構から回転駆動力が伝達されて動作するように構成されている。
Then, a series of transport drive members 33 made of, for example, a chain or the like are bridged over the first and second drive wheels 31 and 32, thereby forming a series of annular transports with respect to the vertical plane as described below. A route is formed.
In the present embodiment, the first and second drive wheels 31 and 32 are configured to operate by transmitting a rotational driving force from a drive mechanism (not shown).

そして、搬送経路を構成する搬送駆動部材33のうち上側の部分に、第1の駆動輪31から第2の駆動輪32に向って移動して基板保持器11を搬送する往路側搬送部(第1の搬送部)33aが形成されるとともに、第2の駆動輪32の周囲の部分の搬送駆動部材33によって基板保持器11の搬送方向を折り返して反対方向に転換する折り返し部33bが形成され、さらに、搬送駆動部材33のうち下側の部分に、第2の駆動輪32から第1の駆動輪31に向って移動する復路側搬送部(第2の搬送部)33cが形成されている。 Then, the outbound side transport unit (third) that moves from the first drive wheel 31 toward the second drive wheel 32 and transports the substrate cage 11 to the upper portion of the transport drive member 33 that constitutes the transport path. 1) 33a is formed, and a folded-back portion 33b is formed by folding back the transporting direction of the substrate cage 11 and converting it in the opposite direction by the transporting drive member 33 in the peripheral portion of the second drive wheel 32. Further, a return path side transport portion (second transport portion) 33c that moves from the second drive wheel 32 toward the first drive wheel 31 is formed on the lower portion of the transport drive member 33.

また、基板保持器搬送機構3には、基板保持器11を導入する基板保持器導入部30Aと、基板保持器11を折り返して搬送する搬送折り返し部30Bと、基板保持器11を排出する基板保持器排出部30Cが設けられている。 Further, the substrate cage transport mechanism 3 includes a substrate cage introduction unit 30A for introducing the substrate cage 11, a transport folded-back portion 30B for folding and transporting the substrate cage 11, and a substrate holder for discharging the substrate cage 11. A vessel discharge unit 30C is provided.

一方、基板保持器搬送機構3の搬送駆動部材33の周囲には、搬送する基板保持器11の脱落を防止するためのガイド部材38が設けられている。
このガイド部材38は、一連のレール状に形成され、図3に示すように、第1の駆動輪31の上部の基板保持器導入部30Aから搬送折り返し部30Bを経て第1の駆動輪31の下部の基板保持器排出部30Cに渡って、搬送駆動部材33と平行に設けられている。
なお、ガイド部材38は、第1の駆動輪31に対し、後述する基板搬入搬出機構6側の領域には設けられていない。
On the other hand, a guide member 38 for preventing the substrate holder 11 to be conveyed from falling off is provided around the transfer drive member 33 of the substrate cage transfer mechanism 3.
The guide member 38 is formed in a series of rails, and as shown in FIG. 3, the first drive wheel 31 is formed from the substrate cage introduction portion 30A above the first drive wheel 31 via the transfer folding portion 30B. It is provided in parallel with the transport drive member 33 over the lower substrate cage discharge portion 30C.
The guide member 38 is not provided in the area on the board loading / unloading mechanism 6 side, which will be described later, with respect to the first drive wheel 31.

真空槽2内の基板保持器搬送機構3の上部には、基板保持器11に保持された基板50を冷却するための冷却領域7が設けられている。
本実施の形態の冷却領域7は、第1の駆動輪31と第2の駆動輪32との間で搬送駆動部材33の往路側搬送部33aの上方に一対の冷却機構7a、7bが並べて配置され、基板保持器11によって保持された基板50の第1面(本実施の形態では表側面)側から基板50を冷却するように構成されている。
A cooling region 7 for cooling the substrate 50 held by the substrate cage 11 is provided above the substrate cage transport mechanism 3 in the vacuum chamber 2.
In the cooling region 7 of the present embodiment, a pair of cooling mechanisms 7a and 7b are arranged side by side between the first drive wheel 31 and the second drive wheel 32 above the outward transport portion 33a of the transport drive member 33. The substrate 50 is cooled from the first surface (front side surface in the present embodiment) side of the substrate 50 held by the substrate cage 11.

この冷却機構7a、7bとしては、基板50と非接触状態で輻射によって冷却するもので、例えば、コールドプレート、極低温冷凍機、水冷ブロック等を好適に用いることができる。
なお、搬送駆動部材33の往路側搬送部33aを挟んで冷却機構7a、7bの反対側、即ち往路側搬送部33aの下方には、第1及び第2の金属層成膜領域4、5から冷却機構7a、7bに対する熱を遮蔽するための遮蔽部材7cが設けられている。
The cooling mechanisms 7a and 7b are those that cool by radiation in a non-contact state with the substrate 50, and for example, a cold plate, a cryogenic refrigerator, a water cooling block, or the like can be preferably used.
The first and second metal layer film forming regions 4 and 5 are located on the opposite sides of the cooling mechanisms 7a and 7b, that is, below the outward transport portion 33a with the outward transport portion 33a of the transport drive member 33 interposed therebetween. A shielding member 7c for shielding heat from the cooling mechanisms 7a and 7b is provided.

真空槽2内には、一対の金属層成膜領域4、5が設けられている。
本実施の形態では、真空槽2内の基板保持器搬送機構3の下部に、スパッタ源4Tを有する第1の金属層成膜領域4と、スパッタ源5Tを有する第2の金属層成膜領域5とが設けられている。
A pair of metal layer film forming regions 4 and 5 are provided in the vacuum chamber 2.
In the present embodiment, a first metal layer film forming region 4 having a sputtering source 4T and a second metal layer forming region having a sputtering source 5T are formed below the substrate cage transport mechanism 3 in the vacuum chamber 2. 5 and are provided.

本実施の形態の第1及び第2の金属層成膜領域4、5は、基板50の第2面(本実施の形態では裏側面)上に所定のパターンの金属層を形成するもので、第1の駆動輪31と第2の駆動輪32との間で搬送駆動部材33の復路側搬送部33cの下方に第1及び第2のスパッタ源4T、5Tが並べて配置されている。
なお、第1及び第2の金属層成膜領域4、5には、所定のスパッタガスを導入するガス導入機構(図示せず)がそれぞれ設けられている。
The first and second metal layer film forming regions 4 and 5 of the present embodiment form a metal layer having a predetermined pattern on the second surface (back surface in the present embodiment) of the substrate 50. The first and second sputter sources 4T and 5T are arranged side by side between the first drive wheel 31 and the second drive wheel 32 below the return path side transport portion 33c of the transport drive member 33.
The first and second metal layer film forming regions 4 and 5 are provided with gas introduction mechanisms (not shown) for introducing a predetermined sputter gas, respectively.

上述した搬送駆動部材33の往路側搬送部33aは、上記冷却機構7a、7bを直線的に通過するように構成され、復路側搬送部33cは、上記第1及び第2の金属層成膜領域4、5を直線的に通過するように構成されている。 The outbound transport portion 33a of the transport drive member 33 described above is configured to linearly pass through the cooling mechanisms 7a and 7b, and the return transport portion 33c is formed in the first and second metal layer film forming regions. It is configured to pass through 4 and 5 in a straight line.

そして、搬送経路を構成するこれら搬送駆動部材33の往路側搬送部33a及び復路側搬送部33cを基板保持器11が通過する場合に、基板保持器11に保持された基板50が水平状態で搬送されるようになっている。 Then, when the substrate cage 11 passes through the outward transport side transport portion 33a and the return route side transport portion 33c of these transport drive members 33 constituting the transport path, the substrate 50 held by the board cage 11 is transported in a horizontal state. It is supposed to be done.

真空槽2内の基板保持器搬送機構3の近傍の位置、例えば第1の駆動輪31に隣接する位置には、基板保持器搬送機構3との間で基板保持器11を受け渡し且つ受け取るための基板搬入搬出機構6が設けられている。 To transfer and receive the substrate cage 11 to and from the substrate cage transfer mechanism 3 at a position in the vacuum chamber 2 near the substrate cage transfer mechanism 3, for example, a position adjacent to the first drive wheel 31. A substrate loading / unloading mechanism 6 is provided.

本実施の形態の基板搬入搬出機構6は、昇降機構60によって例えば鉛直上下方向に駆動される駆動ロッド61の先(上)端部に設けられた支持部62を有している。
本実施の形態では、基板搬入搬出機構6の支持部62上に搬送ロボット64が設けられ、この搬送ロボット64上に上述した基板保持器11を支持して基板保持器11を鉛直上下方向に移動させ、かつ、搬送ロボット64によって基板保持器搬送機構3との間で基板保持器11を受け渡し且つ受け取るように構成されている。
The substrate loading / unloading mechanism 6 of the present embodiment has a support portion 62 provided at the tip (upper) end of the drive rod 61 driven by the elevating mechanism 60, for example, in the vertical vertical direction.
In the present embodiment, the transfer robot 64 is provided on the support portion 62 of the board loading / unloading mechanism 6, and the board holder 11 is supported on the transfer robot 64 to move the board holder 11 in the vertical vertical direction. The transfer robot 64 is configured to transfer and receive the substrate cage 11 from and to the substrate cage transfer mechanism 3.

この場合、後述するように、基板搬入搬出機構6から基板保持器搬送機構3の往路側搬送部33aの基板保持器導入部30Aに基板保持器11を受け渡し(この位置を「基板保持器受け渡し位置」という。)、かつ、基板保持器搬送機構3の復路側搬送部33cの基板保持器排出部30Cから基板保持器11を取り出す(この位置を「基板保持器取り出し位置」という。)ように構成されている。 In this case, as will be described later, the board cage 11 is delivered from the board loading / unloading mechanism 6 to the board cage introduction portion 30A of the outbound side transport portion 33a of the board cage transport mechanism 3 (this position is referred to as “board cage delivery position”. (), And the board cage 11 is taken out from the board holder discharge part 30C of the return path side transport part 33c of the board holder transfer mechanism 3 (this position is referred to as "board cage take-out position"). Has been done.

真空槽2の例えば上部には、真空槽2内に基板50を搬入し且つ真空槽2から基板50を搬出するための基板搬入搬出室2Aが設けられている。
この基板搬入搬出室2Aは、例えば上述した基板搬入搬出機構6の支持部62の上方の位置に連通口2Bを介して設けられており、例えば基板搬入搬出室2Aの上部には、開閉可能な蓋部2aが設けられている。
For example, in the upper part of the vacuum chamber 2, a substrate loading / unloading chamber 2A for loading the substrate 50 into the vacuum chamber 2 and unloading the substrate 50 from the vacuum chamber 2 is provided.
The board loading / unloading chamber 2A is provided, for example, at a position above the support portion 62 of the board loading / unloading mechanism 6 described above via a communication port 2B. For example, the upper part of the board loading / unloading chamber 2A can be opened and closed. A lid 2a is provided.

そして、後述するように、基板搬入搬出室2A内に搬入された基板50を基板搬入搬出機構6の支持部62の搬送ロボット64上の基板保持器11に受け渡して保持させ、かつ、成膜後の基板59を基板搬入搬出機構6の支持部62の搬送ロボット64上の基板保持器11から例えば真空槽2の外部の大気中に搬出するように構成されている。 Then, as will be described later, the substrate 50 carried into the substrate loading / unloading chamber 2A is handed over to the substrate cage 11 on the transfer robot 64 of the support portion 62 of the substrate loading / unloading mechanism 6 to be held, and after the film formation. The substrate 59 of the above is configured to be unloaded from the substrate cage 11 on the transfer robot 64 of the support portion 62 of the substrate loading / unloading mechanism 6 into the atmosphere outside the vacuum chamber 2, for example.

なお、本実施の形態の場合、基板搬入搬出機構6の支持部62の上部の縁部に、基板50を搬入及び搬出する際に基板搬入搬出室2Aと真空槽2内の雰囲気を隔離するための例えばOリング等のシール部材63が設けられている。 In the case of the present embodiment, in order to isolate the atmosphere in the substrate loading / unloading chamber 2A and the vacuum chamber 2 when the substrate 50 is loaded / unloaded at the upper edge of the support portion 62 of the substrate loading / unloading mechanism 6. For example, a seal member 63 such as an O-ring is provided.

この場合、基板搬入搬出機構6の支持部62を基板搬入搬出室2A側に向って上昇させ、支持部62上のシール部材63を真空槽2の内壁に密着させて連通口2Bを塞ぐことにより、真空槽2内の雰囲気に対して基板搬入搬出室2A内の雰囲気を隔離するように構成されている。 In this case, the support portion 62 of the substrate loading / unloading mechanism 6 is raised toward the substrate loading / unloading chamber 2A side, and the seal member 63 on the support portion 62 is brought into close contact with the inner wall of the vacuum chamber 2 to close the communication port 2B. , The atmosphere in the substrate loading / unloading chamber 2A is isolated from the atmosphere in the vacuum chamber 2.

図2に示すように、本実施の形態の基板保持器搬送機構3は、水平面と平行に設けられた平板状の基部フレーム25上に、所定間隔をおいて鉛直方向で平行に設けられた一対の平板状の側部フレーム26を有するフレーム構造体28を備え、このフレーム構造体28に、後述する各部材が例えば搬送方向に対して対称となるように組み付けられ、一体的なユニットとして、基板保持器搬送機構3が構成されている。 As shown in FIG. 2, the substrate cage transport mechanism 3 of the present embodiment is a pair provided in parallel in the vertical direction at predetermined intervals on a flat plate-shaped base frame 25 provided parallel to a horizontal plane. A frame structure 28 having a flat plate-shaped side frame 26 is provided, and each member described later is assembled to the frame structure 28 so as to be symmetrical with respect to, for example, a transport direction, and a substrate is formed as an integral unit. The cage transport mechanism 3 is configured.

この基板保持器搬送機構3は、フレーム構造体28に設けられた取付部17によって上述した真空槽2内に着脱自在に取り付けられるようになっている。
基板保持器搬送機構3には、上述した第1及び第2の駆動輪31、32が一対の側部フレーム26にそれぞれ設けられている。
The substrate cage transport mechanism 3 is detachably mounted in the vacuum chamber 2 described above by a mounting portion 17 provided on the frame structure 28.
The substrate cage transport mechanism 3 is provided with the first and second drive wheels 31 and 32 described above on the pair of side frames 26, respectively.

ここで、第1の駆動輪31は、搬送方向に対して直交する方向の回転軸線を中心として回転する駆動軸31aを有し、この駆動軸31aを中心として回転するようになっている。
一方、第2の駆動輪32は、搬送方向に対して直交する同一の回転軸線を中心として回転駆動される駆動軸35をそれぞれ有し、各駆動軸35は連結部材34を介して第2の駆動輪32にそれぞれ連結されている(図2、図5(a)(b)参照)。
Here, the first drive wheel 31 has a drive shaft 31a that rotates about a rotation axis in a direction orthogonal to the transport direction, and rotates about the drive shaft 31a.
On the other hand, each of the second drive wheels 32 has drive shafts 35 that are rotationally driven about the same rotation axis orthogonal to the transport direction, and each drive shaft 35 has a second drive shaft 35 via a connecting member 34. They are connected to the drive wheels 32, respectively (see FIGS. 2 and 5 (a) and 5 (b)).

そして、一対の側部フレーム26にそれぞれ設けられた第1及び第2の駆動輪31、32にそれぞれ上述した搬送駆動部材33が架け渡され、これにより基板保持器11を搬送する搬送経路が形成されている。 Then, the above-mentioned transport drive members 33 are bridged to the first and second drive wheels 31 and 32 provided on the pair of side frames 26, respectively, thereby forming a transport path for transporting the substrate cage 11. Has been done.

このように、本実施の形態の基板保持器搬送機構3は、各搬送駆動部材33の上側に位置する往路側搬送部(第2の搬送部)33aと、各搬送駆動部材33の下側に位置する復路側搬送部(第1の搬送部)33cとがそれぞれ対向し、鉛直方向に関して重なるように構成されている(図1、図2参照)。 As described above, the substrate cage transport mechanism 3 of the present embodiment is placed on the outward path side transport portion (second transport portion) 33a located above each transport drive member 33 and below each transport drive member 33. The return path side transport section (first transport section) 33c, which is located, is configured to face each other and overlap in the vertical direction (see FIGS. 1 and 2).

一対の搬送駆動部材33には、それぞれ所定の間隔をおいて複数の保持駆動部36が設けられている。
これら保持駆動部36は、基板保持器11を保持して搬送駆動するためのもので、搬送駆動部材33の外方側に突出するように搬送駆動部材33に取り付けられ、その先端部には、例えば搬送方向下流側に向けて形成された例えばJフック形状(搬送方向下流側の突部の高さが搬送方向上流側の突部の高さより低い形状)の保持凹部37が設けられている。
A plurality of holding drive units 36 are provided on the pair of transport drive members 33 at predetermined intervals.
These holding drive units 36 are for holding the substrate cage 11 and driving the transfer, and are attached to the transfer drive member 33 so as to project outward from the transfer drive member 33. For example, a holding recess 37 having a J-hook shape (the height of the protrusion on the downstream side in the transport direction is lower than the height of the protrusion on the upstream side in the transport direction) is provided, which is formed toward the downstream side in the transport direction.

また、図2に示すように、一対の搬送駆動部材33の内側の位置で、第1及び第2の駆動輪31、32の間には、搬送する基板保持器11を支持する一対の基板保持器支持機構18が設けられている。 Further, as shown in FIG. 2, at a position inside the pair of transport drive members 33, between the first and second drive wheels 31 and 32, a pair of substrate holders that support the substrate holder 11 to be transported are held. A vessel support mechanism 18 is provided.

基板保持器支持機構18は、例えば複数のローラ等の回転可能な部材からなるもので、それぞれ搬送駆動部材33の近傍に設けられている。
本実施の形態では、図2及び図3に示すように、搬送駆動部材33の往路側搬送部33aの近傍に往路側基板保持器支持機構18aが設けられるとともに、搬送駆動部材33の復路側搬送部33cの近傍に復路側基板保持器支持機構18bが設けられ、搬送される基板保持器11の下面の両縁部を支持するように配置構成されている。
The substrate cage support mechanism 18 is composed of, for example, a plurality of rotatable members such as rollers, and is provided in the vicinity of each of the transfer drive members 33.
In the present embodiment, as shown in FIGS. 2 and 3, the outward path side substrate cage support mechanism 18a is provided in the vicinity of the outward path side transport portion 33a of the transport drive member 33, and the transport drive member 33 is transported on the return path side. A return path side substrate cage support mechanism 18b is provided in the vicinity of the portion 33c, and is arranged so as to support both edges of the lower surface of the substrate cage 11 to be conveyed.

ここで、往路側基板保持器支持機構18aは、基板保持器導入部30A内に設けた端部を始端部として冷却領域7(図1参照)を経由して搬送折り返し部30Bの直近の位置が終端部となるように直線状に設けられている。 Here, the outward path side substrate cage support mechanism 18a is located at the position closest to the transfer folding portion 30B via the cooling region 7 (see FIG. 1) with the end provided in the substrate cage introduction portion 30A as the starting end. It is provided in a straight line so as to be the end portion.

一方、復路側基板保持器支持機構18bは、搬送折り返し部30Bの第2の駆動輪32側の位置を始端部として第1及び第2の成膜領域4、5(図1参照)を経由して基板保持器排出部30Cの位置が終端部となるように直線状に設けられている。 On the other hand, the return path side substrate cage support mechanism 18b passes through the first and second film forming regions 4 and 5 (see FIG. 1) with the position on the second drive wheel 32 side of the transport folding back portion 30B as the starting end. The substrate cage discharge portion 30C is provided in a straight line so as to be the terminal portion.

本実施の形態に用いる基板保持器11は、基板50の第2面(裏側面)上に成膜を行うもので、開口部を有するトレイ状のものからなる。
図4(a)〜(c)に示すように、この基板保持器11は、例えば長尺枠状の本体部11aに、その長手方向即ち搬送方向に対して直交する方向に例えば矩形状の複数の基板50を一列に並べてそれぞれ保持する複数の保持部13が設けられている。
The substrate cage 11 used in the present embodiment forms a film on the second surface (back side surface) of the substrate 50, and is formed of a tray-like structure having an opening.
As shown in FIGS. 4A to 4C, the substrate cage 11 has a plurality of, for example, rectangular shapes in a direction orthogonal to the longitudinal direction, that is, the transport direction thereof, for example, in the long frame-shaped main body portion 11a. A plurality of holding portions 13 for arranging and holding the substrates 50 in a row are provided.

ここで、各保持部13には、本体部11aの搬送時の表面(上面)側に、各基板50と同等の大きさ及び形状で各基板50の表側面が全面的に露出する例えば矩形状の開口部14が設けられるとともに、本体部11aの搬送時の裏面(下面)側には、上記各開口部14とそれぞれ連通し基板50の大きさより小さい例えば矩形状の開口部15が設けられている。 Here, each holding portion 13 has, for example, a rectangular shape in which the front side surface of each substrate 50 is entirely exposed on the surface (upper surface) side of the main body portion 11a during transportation with the same size and shape as each substrate 50. On the back surface (lower surface) side of the main body 11a during transportation, for example, a rectangular opening 15 smaller than the size of the communication board 50 is provided with each of the openings 14. There is.

この開口部15の例えば下部には、成膜の際に所定のパターンを形成するためのマスク15aが設けられている。
一方、各保持部13における本体部11aの中腹部分には、各基板50を載置可能な矩形枠状の凹部からなる載置部16がそれぞれ設けられている。
これら各載置部16は、凹部の底面が例えば本体部11aの表面及び裏面と平行な平面状に形成され、成膜の際に各基板50を水平に保持するように構成されている。
A mask 15a for forming a predetermined pattern at the time of film formation is provided at, for example, the lower part of the opening 15.
On the other hand, in the middle portion of the main body portion 11a of each holding portion 13, a mounting portion 16 formed of a rectangular frame-shaped recess on which each substrate 50 can be mounted is provided.
Each of these mounting portions 16 is configured such that the bottom surface of the recess is formed in a plane parallel to, for example, the front surface and the back surface of the main body portion 11a, and each substrate 50 is held horizontally during film formation.

このような構成を有する本実施の形態の基板保持器11では、複数の保持部13に保持された複数の基板50の成膜工程において、各基板50の第1面である表側面が全面的に露出する一方で、各基板50の裏側面には、第1及び第2の成膜領域4、5を通過する際に、第1及び第2のスパッタ源4T、5Tから飛翔する金属成膜材料がマスク15aを介して到達する。 In the substrate cage 11 of the present embodiment having such a configuration, in the film forming process of the plurality of substrates 50 held by the plurality of holding portions 13, the front surface surface, which is the first surface of each substrate 50, is entirely covered. On the back surface of each substrate 50, metal film formations that fly from the first and second sputter sources 4T and 5T when passing through the first and second film formation regions 4 and 5 are formed. The material reaches through the mask 15a.

一方、基板保持器11の本体部11aの長手方向の両端部で且つ幅方向即ち搬送方向の一方側の端部には、支持軸12がそれぞれ設けられている。
これらの支持軸12は、本体部11aの長手方向に延びる回転軸線を中心として断面円形状に形成され、それぞれの基部12aが両側に向って細くなるような円錐台形状に形成され、それぞれの先端部12bが基部12aより小径の円柱形状に形成されている。
On the other hand, support shafts 12 are provided at both ends of the main body 11a of the substrate cage 11 in the longitudinal direction and at one end in the width direction, that is, in the transport direction.
These support shafts 12 are formed in a circular cross-section centered on a rotation axis extending in the longitudinal direction of the main body 11a, and are formed in a truncated cone shape in which each base portion 12a is tapered toward both sides. The portion 12b is formed in a cylindrical shape having a diameter smaller than that of the base portion 12a.

そして、基板保持器11の支持軸12の各先端部12bが、上述した搬送駆動部材33の保持駆動部36の保持凹部37にそれぞれ嵌り、この支持軸12を中心として回転可能に保持されるように各部分の寸法が定められている。 Then, each tip portion 12b of the support shaft 12 of the substrate cage 11 is fitted into the holding recess 37 of the holding drive portion 36 of the transport drive member 33 described above, and is rotatably held around the support shaft 12. The dimensions of each part are specified in.

このような構成により、基板保持器11の支持軸12の各先端部12bが搬送駆動部材33の保持駆動部36の保持凹部37にそれぞれ嵌って保持されて搬送される場合に、保持駆動部36の保持凹部37と上述した先細形状の支持軸12との当接によって基板保持器11の支持軸12方向の位置決めがなされるようになっている。 With such a configuration, when each tip portion 12b of the support shaft 12 of the substrate cage 11 is fitted into the holding recess 37 of the holding drive portion 36 of the transport driving member 33 and is held and transported, the holding drive portion 36 The substrate cage 11 is positioned in the support shaft 12 direction by abutting the holding recess 37 of the substrate holder 11 with the tapered support shaft 12 described above.

また、本実施の形態では、基板保持器11の支持軸12の各先端部12bが搬送駆動部材33の保持駆動部36の保持凹部37にそれぞれ嵌って支持された状態において、基板保持器11の支持軸12の先端部12bとガイド部材38との間に若干の隙間が形成されるように各部材の寸法が定められている。 Further, in the present embodiment, in a state where each tip portion 12b of the support shaft 12 of the substrate cage 11 is fitted and supported in the holding recess 37 of the holding drive portion 36 of the transport drive member 33, the substrate cage 11 is supported. The dimensions of each member are determined so that a slight gap is formed between the tip portion 12b of the support shaft 12 and the guide member 38.

このような構成により、基板保持器11の支持軸12の各先端部12bが搬送駆動部材33の保持駆動部36の保持凹部37にそれぞれ嵌って支持されて搬送される場合に、ガイド部材38と基板保持器11の支持軸12の先端部12bとの当接によって基板保持器11の搬送経路からの脱落が防止されるようになっている。 With such a configuration, when each tip portion 12b of the support shaft 12 of the substrate cage 11 is fitted into the holding recess 37 of the holding drive portion 36 of the transport driving member 33, is supported and transported, the guide member 38 and the guide member 38 The contact of the support shaft 12 of the substrate cage 11 with the tip end portion 12b prevents the substrate cage 11 from falling off from the transport path.

本実施の形態の基板保持器搬送機構3の搬送折り返し部30Bは、以下に説明するように構成されている。
まず、図3及び図5(a)(b)に示すように、基板保持器搬送機構3における第2の駆動輪32に対して第1の駆動輪31側の隣接する位置には、基板50を折り返して搬送する際に基板保持器11を支持してその姿勢を制御する姿勢制御機構20が設けられている。
The transport folding back portion 30B of the substrate cage transport mechanism 3 of the present embodiment is configured as described below.
First, as shown in FIGS. 3 and 5 (a) and 5 (b), the substrate 50 is located adjacent to the second drive wheel 32 in the substrate cage transport mechanism 3 on the side of the first drive wheel 31. A posture control mechanism 20 is provided to support the substrate cage 11 and control its posture when the substrate holder 11 is folded back and conveyed.

この姿勢制御機構20は、搬送方向に対して直交する方向に延びる駆動軸21を有し、この駆動軸21は、一対の側部フレーム26を貫通して回転自在に支持されている。
そして、この駆動軸21に、一対の基板保持器支持機構18の間隔より小さい間隔をおいて、一対の支持アーム22が取り付けられている(図5(a)参照)。
これらの支持アーム22は、直線棒状の部材からなり、その両端部にそれぞれ支持ローラ23が設けられている。
The attitude control mechanism 20 has a drive shaft 21 extending in a direction orthogonal to the transport direction, and the drive shaft 21 is rotatably supported through a pair of side frames 26.
A pair of support arms 22 are attached to the drive shaft 21 at intervals smaller than the distance between the pair of substrate cage support mechanisms 18 (see FIG. 5A).
These support arms 22 are made of straight rod-shaped members, and support rollers 23 are provided at both ends thereof.

一方、支持アーム22の駆動軸21は、第2の駆動輪32の駆動軸35と例えばベルト状の動力伝達部材24によって連結され、これにより、第2の駆動輪32と支持アーム22とが、後述するように、所定の関係で同期して同方向に回転するように構成されている。 On the other hand, the drive shaft 21 of the support arm 22 is connected to the drive shaft 35 of the second drive wheel 32 by, for example, a belt-shaped power transmission member 24, whereby the second drive wheel 32 and the support arm 22 are connected to each other. As will be described later, it is configured to rotate in the same direction in synchronization with a predetermined relationship.

以下、本実施の形態の成膜装置1の動作、並びに、この成膜装置1を用いた成膜方法を、図6〜図16を参照して説明する。また、本明細書では、ヘテロ接合型太陽電池の金属からなる裏面電極層を形成する場合を例にとって説明する。 Hereinafter, the operation of the film forming apparatus 1 of the present embodiment and the film forming method using the film forming apparatus 1 will be described with reference to FIGS. 6 to 16. Further, in the present specification, a case where a back electrode layer made of metal of a heterojunction solar cell is formed will be described as an example.

ここでは、理解を容易にするため、一つの基板保持器11に一つの基板50を保持して成膜を行う場合を例にとって説明する。
また、基板保持器11の支持軸12が設けられた側を前方にして基板保持器11を基板保持器導入部30Aに対して導入するものとする(図9(a)参照)。
Here, in order to facilitate understanding, a case where one substrate 50 is held in one substrate cage 11 to form a film will be described as an example.
Further, it is assumed that the substrate cage 11 is introduced into the substrate cage introduction unit 30A with the side of the substrate cage 11 provided with the support shaft 12 facing forward (see FIG. 9A).

本実施の形態では、まず、図6に示すように、基板搬入搬出機構6の支持部62上のシール部材63を真空槽2の内壁に密着させて真空槽2内の雰囲気に対して基板搬入搬出室2A内の雰囲気を隔離した状態で、基板搬入搬出室2Aの蓋部2aを開け、図示しない搬送ロボットを用いて基板50を基板搬入搬出機構6の支持部62の搬送ロボット64上の基板保持器11に装着して保持させる。 In the present embodiment, first, as shown in FIG. 6, the seal member 63 on the support portion 62 of the substrate loading / unloading mechanism 6 is brought into close contact with the inner wall of the vacuum chamber 2 to carry in the substrate with respect to the atmosphere inside the vacuum chamber 2. With the atmosphere in the carry-out chamber 2A isolated, the lid 2a of the board carry-in / carry-out chamber 2A is opened, and the board 50 is transferred to the board 50 on the transfer robot 64 of the support portion 62 of the board carry-in / carry-out mechanism 6 using a transfer robot (not shown). It is attached to the cage 11 and held.

ここで、基板50は、図16(a)に示すように、n型単結晶シリコン基板51の成膜側面と反対側の面である第1面(表側面)上に、アモルファスシリコン層52及びテクスチャー構造の反射防止膜53が順次設けられている。 Here, as shown in FIG. 16A, the substrate 50 has the amorphous silicon layer 52 and the amorphous silicon layer 52 on the first surface (front side surface) which is the surface opposite to the film formation side surface of the n-type single crystal silicon substrate 51. Antireflection films 53 having a texture structure are sequentially provided.

一方、このn型単結晶シリコン基板51の成膜側面である第2面(裏側面)上には、i型アモルファスシリコン層56が設けられ、このi型アモルファスシリコン層56上に、p型アモルファスシリコン層57aとn型アモルファスシリコン層57bが隣接して設けられている。 On the other hand, an i-type amorphous silicon layer 56 is provided on a second surface (back side surface) which is a film-forming side surface of the n-type single crystal silicon substrate 51, and a p-type amorphous silicon layer 56 is provided on the i-type amorphous silicon layer 56. A silicon layer 57a and an n-type amorphous silicon layer 57b are provided adjacent to each other.

そして、図7に示すように、基板搬入搬出室2Aの蓋部2aを閉じた後、基板搬入搬出機構6の支持部62を基板保持器受け渡し位置まで下降させ、基板保持器11の高さが搬送駆動部材33の往路側搬送部33aと同等の高さ位置となるようにする。 Then, as shown in FIG. 7, after closing the lid 2a of the board loading / unloading chamber 2A, the support portion 62 of the board loading / unloading mechanism 6 is lowered to the board cage delivery position, and the height of the board cage 11 is raised. The height position of the transport drive member 33 is set to be the same as that of the forward side transport portion 33a.

さらに、図8に示すように、基板搬入搬出機構6の支持部62に設けた搬送ロボット64によって基板保持器11を基板保持器搬送機構3の基板保持器導入部30Aに配置する。
これにより、図9(a)に示すように、基板保持器11の下面11bが往路側基板保持器支持機構18aによって支持される。
Further, as shown in FIG. 8, the substrate cage 11 is arranged in the substrate cage introduction portion 30A of the substrate cage transport mechanism 3 by the transfer robot 64 provided in the support portion 62 of the substrate loading / unloading mechanism 6.
As a result, as shown in FIG. 9A, the lower surface 11b of the substrate cage 11 is supported by the outbound substrate cage support mechanism 18a.

次に、基板保持器搬送機構3の第1及び第2の駆動輪31、32を動作させ、搬送駆動部材33の往路側搬送部33aを第1の駆動輪31から第2の駆動輪32に向って移動させるとともに、搬送駆動部材33の復路側搬送部33cを第2の駆動輪32から第1の駆動輪31に向って移動させる。 Next, the first and second drive wheels 31 and 32 of the substrate cage transport mechanism 3 are operated, and the outward transport portion 33a of the transport drive member 33 is changed from the first drive wheel 31 to the second drive wheel 32. At the same time, the return path side transport portion 33c of the transport drive member 33 is moved from the second drive wheel 32 toward the first drive wheel 31.

これにより、図9(b)に示すように、搬送駆動部材33上に設けられた保持駆動部36の保持凹部37が基板保持器11の一対の支持軸12と嵌り合って当該支持軸12が保持駆動部36に保持され、基板保持器11が搬送駆動部材33の往路側搬送部33a上を第2の駆動輪32近傍の搬送折り返し部30Bに向って搬送される。 As a result, as shown in FIG. 9B, the holding recess 37 of the holding drive unit 36 provided on the transport drive member 33 is fitted with the pair of support shafts 12 of the substrate cage 11, and the support shaft 12 is formed. It is held by the holding drive unit 36, and the substrate cage 11 is transported on the outward path side transport portion 33a of the transport drive member 33 toward the transport turn-back portion 30B near the second drive wheel 32.

そして、冷却領域7を通過する際に、基板保持器11に保持された基板50の第1面(表側面)側から、冷却機構7a、7bによって上方から輻射による冷却を行う(図1参照)。
具体的には、図16(a)に示す基板50の反射防止膜53の表面を冷却機構7a、7bによって上方から冷却する。
上述したように、本実施の形態では、基板保持器11に保持された基板50の第1面は全面的に露出しているため、基板50の全体が十分に冷却される。
Then, when passing through the cooling region 7, cooling is performed by radiation from above by the cooling mechanisms 7a and 7b from the first surface (front side surface) side of the substrate 50 held by the substrate cage 11 (see FIG. 1). ..
Specifically, the surface of the antireflection film 53 of the substrate 50 shown in FIG. 16A is cooled from above by the cooling mechanisms 7a and 7b.
As described above, in the present embodiment, since the first surface of the substrate 50 held by the substrate cage 11 is completely exposed, the entire substrate 50 is sufficiently cooled.

図10(a)〜(c)は、本実施の形態の基板保持器搬送機構の搬送折り返し部の動作を示す説明図である。
本実施の形態では、上述したように、搬送駆動部材33の保持駆動部36によって基板保持器11の支持軸12が保持されるとともに、基板保持器11の下面11bが往路側基板保持器支持機構18aによって支持された状態で搬送折り返し部30Bに向って搬送される(図9(a)(b)参照)。
10 (a) to 10 (c) are explanatory views showing the operation of the transfer folding portion of the substrate cage transfer mechanism of the present embodiment.
In the present embodiment, as described above, the support shaft 12 of the substrate cage 11 is held by the holding drive unit 36 of the transport drive member 33, and the lower surface 11b of the substrate cage 11 is the outbound side substrate cage support mechanism. It is conveyed toward the transfer folding portion 30B while being supported by 18a (see FIGS. 9A and 9B).

そして、図10(a)に示すように、基板保持器11の支持軸12が搬送折り返し部30Bの第2の駆動輪32の上部に到達した時点で基板保持器11の後端部が、往路側基板保持器支持機構18aの終端部18cから外れるように、基板保持器11の寸法及び支持軸12の配置位置と、往路側基板保持器支持機構18aの寸法がそれぞれ設定されている。 Then, as shown in FIG. 10A, when the support shaft 12 of the substrate cage 11 reaches the upper part of the second drive wheel 32 of the transport folding back portion 30B, the rear end portion of the substrate cage 11 is on the outward path. The dimensions of the substrate cage 11, the arrangement position of the support shaft 12, and the dimensions of the outward path side substrate cage support mechanism 18a are set so as to deviate from the terminal portion 18c of the side substrate cage support mechanism 18a.

ここで、基板保持器11は、上述したように一対の支持軸12の先端部12bが搬送駆動部材33の保持駆動部36の保持凹部37に保持された状態において、支持軸12を中心として回転可能になっていることから、本実施の形態では、基板保持器11が往路側基板保持器支持機構18aの終端部18cから外れた時点において、姿勢制御機構20の一対の支持アーム22の一方の端部に設けた支持ローラ23によって基板保持器11の支持軸12に対し後端部側の下面11bを支持して水平状態を保つように構成されている。
この姿勢制御機構20の一対の支持アーム22は、上述したように、第2の駆動輪32と同期して第2の駆動輪32と同一方向に回転するように構成されている。
Here, the substrate cage 11 rotates about the support shaft 12 in a state where the tip portions 12b of the pair of support shafts 12 are held in the holding recesses 37 of the holding drive portion 36 of the transport drive member 33 as described above. Therefore, in the present embodiment, when the substrate cage 11 is separated from the terminal portion 18c of the outward path side substrate cage support mechanism 18a, one of the pair of support arms 22 of the attitude control mechanism 20 is enabled. A support roller 23 provided at the end supports the lower surface 11b on the rear end side with respect to the support shaft 12 of the substrate cage 11 to maintain a horizontal state.
As described above, the pair of support arms 22 of the attitude control mechanism 20 are configured to rotate in the same direction as the second drive wheels 32 in synchronization with the second drive wheels 32.

図10(b)に示すように、本実施の形態においては、搬送駆動部材33の移動に伴い、保持駆動部36が、往路側搬送部33aから折り返し部33bを経由して復路側搬送部33cに向って移動する。 As shown in FIG. 10B, in the present embodiment, as the transport drive member 33 moves, the holding drive unit 36 moves from the outward transport side transport portion 33a to the return route side transport portion 33c via the turn-back portion 33b. Move towards.

この移動の際、基板保持器11の支持軸12は第2の駆動輪32の周囲を円弧状に移動して下降するが、本実施の形態では、その際、姿勢制御機構20の一対の支持アーム22の一方の端部の支持ローラ23によって基板保持器11の後端部側の下面11bを支持し、基板保持器11の姿勢がほぼ水平状態に保たれるように、姿勢制御機構20の支持アーム22の寸法及び回転角度を設定している。 At the time of this movement, the support shaft 12 of the substrate cage 11 moves in an arc shape around the second drive wheel 32 and descends. In this embodiment, at that time, a pair of supports of the attitude control mechanism 20 The attitude control mechanism 20 supports the lower surface 11b on the rear end side of the substrate cage 11 by the support roller 23 at one end of the arm 22 so that the posture of the substrate cage 11 is kept substantially horizontal. The dimensions and rotation angle of the support arm 22 are set.

また、この移動の際には、保持駆動部36の保持凹部37に支持された基板保持器11の支持軸12が、保持駆動部36の保持凹部37より下方に位置するようになるため、重力の作用によって保持駆動部36の保持凹部37から離脱する方向の力が基板保持器11の支持軸12に働くが、本実施の形態においては、上述したように、基板保持器11の支持軸12の各先端部12b(図4(a)参照)が搬送駆動部材33の保持駆動部36の保持凹部37にそれぞれ嵌って保持された状態において、基板保持器11の支持軸12の先端部12bとガイド部材38との間に若干の隙間が形成されるように構成されていることから、基板保持器11の支持軸12の先端部12bは、保持駆動部36の保持凹部37に対して若干隙間が生じた状態でガイド部材38の内側の部分に接触して支持される。
その結果、本実施の形態では、搬送折り返し部30Bを通過する際に、基板保持器11が搬送駆動部材33の保持駆動部36から脱落することはない。
Further, during this movement, the support shaft 12 of the substrate cage 11 supported by the holding recess 37 of the holding drive unit 36 is located below the holding recess 37 of the holding drive unit 36, so that gravity A force acting in the direction of detaching from the holding recess 37 of the holding drive unit 36 acts on the support shaft 12 of the substrate cage 11, but in the present embodiment, as described above, the support shaft 12 of the substrate cage 11 In a state where each of the tip portions 12b (see FIG. 4A) is fitted and held in the holding recess 37 of the holding drive portion 36 of the transport drive member 33, the tip portion 12b of the support shaft 12 of the substrate cage 11 and Since it is configured so that a slight gap is formed between the guide member 38 and the guide member 38, the tip portion 12b of the support shaft 12 of the substrate cage 11 has a slight gap with respect to the holding recess 37 of the holding drive portion 36. Is generated, and is supported by contacting with the inner portion of the guide member 38.
As a result, in the present embodiment, the substrate cage 11 does not fall off from the holding drive unit 36 of the transport driving member 33 when passing through the transport folding back portion 30B.

さらに、図10(c)に示すように、基板保持器11の支持軸12が搬送折り返し部30Bの第2の駆動輪32の下部に到達すると、基板保持器11の支持軸12が設けられた側と反対側の端部が搬送方向側の先端部となるが、本実施の形態では、この時点において、基板保持器11の当該先端部の下面11bが円滑に復路側基板保持器支持機構18bに支持されるとともに、支持アーム22の支持ローラ23が基板保持器11の下面11bから離れるように、姿勢制御機構20の支持アーム22の寸法及び回転角度を設定している。 Further, as shown in FIG. 10C, when the support shaft 12 of the substrate cage 11 reaches the lower part of the second drive wheel 32 of the transport folding back portion 30B, the support shaft 12 of the substrate cage 11 is provided. The end on the opposite side to the side is the tip on the transport direction side, but in the present embodiment, at this point, the lower surface 11b of the tip of the substrate cage 11 is smoothly the return path side substrate cage support mechanism 18b. The dimensions and rotation angle of the support arm 22 of the posture control mechanism 20 are set so that the support roller 23 of the support arm 22 is separated from the lower surface 11b of the substrate cage 11.

また、この時点では、この支持アーム22の他方側の端部の支持ローラ23aが、後続の基板保持器11の下面11bを支持するように姿勢制御機構20の支持アーム22の寸法及び回転角度を設定している。
以上より、本実施の形態によれば、搬送折り返し部30Bを経由して搬送する際に基板保持器11の上下関係を変えることなく搬送を行うことができる。
At this point, the dimensions and rotation angle of the support arm 22 of the attitude control mechanism 20 are adjusted so that the support roller 23a at the other end of the support arm 22 supports the lower surface 11b of the subsequent substrate cage 11. It is set.
From the above, according to the present embodiment, it is possible to carry out the transfer without changing the vertical relationship of the substrate cage 11 when the transfer is performed via the transfer folding portion 30B.

その後、基板保持器搬送機構3の第1及び第2の駆動輪31、32の動作を継続することにより、図11(a)(b)に示すように、復路側基板保持器支持機構18bに支持された基板保持器11を、搬送駆動部材33の復路側搬送部33cの保持駆動部36の動作によって搬送折り返し部30Bから基板保持器排出部30Cに向って移動させる。 After that, by continuing the operation of the first and second drive wheels 31 and 32 of the substrate cage transport mechanism 3, as shown in FIGS. 11A and 11B, the return path side substrate cage support mechanism 18b is provided. The supported substrate cage 11 is moved from the transport folding back portion 30B toward the substrate cage discharge portion 30C by the operation of the holding drive portion 36 of the return path side transport portion 33c of the transport drive member 33.

この動作の際、基板保持器11に保持された基板50に対し、第1及び第2の成膜領域4、5の位置を通過する際に、基板保持器11の下方に位置する第1及び第2のスパッタ源4T、5Tによってそれぞれスパッタリングによる成膜を行う(図1参照)。 During this operation, when passing through the positions of the first and second film forming regions 4 and 5 with respect to the substrate 50 held by the substrate cage 11, the first and second and second positions located below the substrate cage 11 A film is formed by sputtering using the second sputtering sources 4T and 5T, respectively (see FIG. 1).

この場合、本実施の形態の基板保持器搬送機構3では、上述したように、搬送折り返し部30Bを経由して搬送する際に基板保持器11の上下関係は変わらないため、基板保持器11に保持された基板50の第1面と反対側の第2面上に成膜を行うことになる。 In this case, in the substrate cage transport mechanism 3 of the present embodiment, as described above, the vertical relationship of the substrate cage 11 does not change when the substrate cage 11 is transported via the transport folding back portion 30B, so that the substrate cage 11 is used. A film is formed on the second surface of the held substrate 50 opposite to the first surface.

上述したように、本実施の形態では、基板保持器11に保持された基板50の第2面(裏側面)側の開口部15には、所定のパターンのマスク15aが設けられていることから、基板50の第2面上には、所定のパターンの金属層が形成される。 As described above, in the present embodiment, the opening 15 on the second surface (back side surface) side of the substrate 50 held by the substrate cage 11 is provided with the mask 15a having a predetermined pattern. , A metal layer having a predetermined pattern is formed on the second surface of the substrate 50.

具体的には、図16(b)に示す基板50のp型アモルファスシリコン層57aとn型アモルファスシリコン層57bの表面に、それぞれスパッタリングによって金属からなる裏面電極層58a、58bが形成され、これにより目的とする成膜後の基板59を得る。 Specifically, back electrode layers 58a and 58b made of metal are formed on the surfaces of the p-type amorphous silicon layer 57a and the n-type amorphous silicon layer 57b of the substrate 50 shown in FIG. 16B by sputtering, respectively. The target substrate 59 after film formation is obtained.

その後、基板保持器11が基板保持器排出部30Cに到達した後、基板保持器11が基板保持器排出部30Cのガイド部材38の終端部に到達すると、図12(a)に示すように、基板保持器11の搬送方向下流(前方)側の部分が復路側基板保持器支持機構18b及びガイド部材38の終端部から突出した状態になることから、基板搬入搬出機構6の支持部62を基板保持器取り出し位置に配置し(図13参照)、上述した基板搬入搬出機構6の搬送ロボット64を構成する載置部65によって基板保持器11の下面11bを支持する。 After that, when the substrate cage 11 reaches the substrate cage discharge portion 30C and then the substrate cage 11 reaches the terminal portion of the guide member 38 of the substrate cage discharge portion 30C, as shown in FIG. 12A, Since the portion of the substrate cage 11 on the downstream (front) side in the transport direction protrudes from the terminal portion of the return path side substrate cage support mechanism 18b and the guide member 38, the support portion 62 of the substrate loading / unloading mechanism 6 is mounted on the substrate. It is arranged at the cage take-out position (see FIG. 13), and the lower surface 11b of the substrate cage 11 is supported by the mounting portion 65 constituting the transfer robot 64 of the substrate loading / unloading mechanism 6 described above.

さらに、搬送駆動部材33の動作を継続すると、第1の駆動輪31の周囲の搬送駆動部材33と共に移動する保持駆動部36が円弧状の搬送駆動部材33と共に基板保持器11の支持軸12から離間して上方に移動することから、図12(b)に示すように、搬送駆動部材33の保持駆動部36と基板保持器11の支持軸12との嵌合が外れ、基板保持器11はその位置で停止する。 Further, when the operation of the transport drive member 33 is continued, the holding drive unit 36 that moves together with the transport drive member 33 around the first drive wheel 31 moves from the support shaft 12 of the substrate cage 11 together with the arc-shaped transport drive member 33. Since they move upward apart from each other, as shown in FIG. 12B, the holding drive unit 36 of the transport drive member 33 and the support shaft 12 of the substrate cage 11 are disengaged, and the substrate cage 11 is disengaged. Stop at that position.

そこで、基板搬入搬出機構6の搬送ロボット64を用い、図13に示すように、基板保持器11を基板保持器排出部30Cから基板搬入搬出機構6側に取り出して搬送ロボット64と共に支持部62上に配置する。 Therefore, using the transfer robot 64 of the board loading / unloading mechanism 6, as shown in FIG. 13, the board cage 11 is taken out from the board cage discharge section 30C to the board loading / unloading mechanism 6 side, and together with the transfer robot 64, on the support portion 62. Place in.

その後、図14に示すように、基板搬入搬出機構6の支持部62を上昇させ、支持部62上のシール部材63を真空槽2の内壁に密着させて真空槽2内の雰囲気に対して基板搬入搬出室2A内の雰囲気を隔離する。 After that, as shown in FIG. 14, the support portion 62 of the substrate loading / unloading mechanism 6 is raised, and the seal member 63 on the support portion 62 is brought into close contact with the inner wall of the vacuum chamber 2 so that the substrate is exposed to the atmosphere inside the vacuum chamber 2. Isolate the atmosphere in the carry-in / carry-out room 2A.

そして、図15に示すように、基板搬入搬出室2Aの蓋部2aを開け、図示しない搬送ロボットを用い、成膜済の基板59を基板保持器11から大気中に取り出す。
これにより、本実施の形態における基本的な冷却工程及び成膜工程が終了する。
Then, as shown in FIG. 15, the lid 2a of the substrate loading / unloading chamber 2A is opened, and the film-deposited substrate 59 is taken out from the substrate cage 11 into the atmosphere by using a transfer robot (not shown).
As a result, the basic cooling step and the film forming step in the present embodiment are completed.

ところで、上記実施の形態では、基板50に対し、第1及び第2の成膜領域4、5において1回の成膜を行う場合を例にとって説明したが、本発明は、第1及び第2の成膜領域4、5を複数回通過して複数回の成膜を行うように構成することもでき、またその場合により有効となるものである。 By the way, in the above-described embodiment, the case where the film is formed once in the first and second film forming regions 4 and 5 on the substrate 50 has been described as an example, but the present invention has the first and the second. It is also possible to configure the film formation region 4 and 5 to pass through the film formation regions 4 and 5 a plurality of times to perform a plurality of film formations, and in that case, it is more effective.

この場合は、例えば図17に示すように、基板搬入搬出機構6の支持部62を基板保持器取り出し位置に配置して搬送ロボット64を用い、1回目の成膜が終了した基板59を保持した基板保持器11を、基板保持器排出部30Cから基板搬入搬出機構6側に取り出して搬送ロボット64と共に支持部62上に配置する。 In this case, for example, as shown in FIG. 17, the support portion 62 of the substrate loading / unloading mechanism 6 is arranged at the substrate cage take-out position, and the transfer robot 64 is used to hold the substrate 59 after the first film formation. The substrate cage 11 is taken out from the substrate cage discharge portion 30C to the substrate loading / unloading mechanism 6 side and arranged on the support portion 62 together with the transfer robot 64.

そして、図18に示すように、基板搬入搬出機構6の支持部62を基板保持器受け渡し位置まで上昇させ、基板保持器11の高さが搬送駆動部材33の往路側搬送部33aと同等の高さ位置となるように配置し、基板搬入搬出機構6の支持部62上の搬送ロボット64によって基板保持器11を基板保持器搬送機構3の基板保持器導入部30Aに受け渡して配置する。 Then, as shown in FIG. 18, the support portion 62 of the substrate loading / unloading mechanism 6 is raised to the substrate cage delivery position, and the height of the substrate cage 11 is the same as the outbound side transport portion 33a of the transfer drive member 33. The substrate cage 11 is delivered to the substrate cage introduction portion 30A of the substrate cage transfer mechanism 3 by the transfer robot 64 on the support portion 62 of the substrate loading / unloading mechanism 6 and arranged so as to be in the vertical position.

そして、上述したように、基板保持器11を搬送駆動部材33の往路側搬送部33a上を搬送折り返し部30Bに向って搬送し、基板保持器11に保持された基板50の第1面(表側面)を、冷却機構7a、7bによって上方から2回目の冷却を行う。 Then, as described above, the substrate cage 11 is transported on the outward-passing transport portion 33a of the transport drive member 33 toward the transport folding portion 30B, and the first surface of the substrate 50 held by the substrate cage 11 (table). The side surface) is cooled for the second time from above by the cooling mechanisms 7a and 7b.

そして、基板保持器11を上下関係を維持した状態で搬送駆動部材33の往路側搬送部33aから搬送折り返し部30Bを介して復路側搬送部33cに向って折り返して搬送し、第1及び第2の金属層成膜領域4、5を通過させ、基板保持器11に保持された1回目の成膜後の基板59の第2面(裏側面)上にスパッタリングによって2回目の金属層の成膜を行う。
さらに、上述した動作及び工程を繰り返すことにより、当該基板59に対して3回以上の冷却工程及び成膜工程を行うことも可能である。
Then, with the substrate cage 11 maintained in a vertical relationship, the substrate cage 11 is folded back from the outward transport side transport portion 33a of the transport drive member 33 toward the return route side transport portion 33c via the transport turn-back portion 30B, and the first and second The second metal layer is formed by sputtering on the second surface (back side surface) of the substrate 59 after the first film formation held in the substrate cage 11 after passing through the metal layer film forming regions 4 and 5 of the above. I do.
Further, by repeating the above-mentioned operations and steps, it is possible to perform the cooling step and the film forming step three or more times on the substrate 59.

以上述べたように、本実施の形態では、単一の真空雰囲気が形成される真空槽2内に、基板保持器11を搬送経路に沿って所定方向に搬送する往路側搬送部33aと、基板保持器11を搬送経路に沿って往路側搬送部33aの搬送方向と反対方向に搬送する復路側搬送部33cと、基板保持器11を上下関係を維持した状態で往路側搬送部33aから復路側搬送部33cに向って折り返して搬送する搬送折り返し部30Bとを有する基板保持器搬送機構3を備え、往路側搬送部33aが、冷却領域7を通過し、かつ、復路側搬送部33cが、第1及び第2の金属層成膜領域4、5を通過するように設けられている。 As described above, in the present embodiment, the outbound side transport portion 33a for transporting the substrate cage 11 in a predetermined direction along the transport path and the substrate in the vacuum tank 2 in which a single vacuum atmosphere is formed. The return path side transport section 33c that transports the cage 11 along the transport path in the direction opposite to the transport direction of the outward path side transport section 33a, and the board cage 11 from the outward path side transport section 33a to the return path side while maintaining the vertical relationship. A substrate cage transport mechanism 3 having a transport folding section 30B that folds back toward the transport section 33c is provided, the outward transport section 33a passes through the cooling region 7, and the return path side transport section 33c is the first. It is provided so as to pass through the first and second metal layer film forming regions 4 and 5.

このような本実施の形態では、基板保持器搬送機構3において、往路側搬送部33aによって基板保持器11を冷却領域7を通過するように搬送経路に沿って所定方向に搬送し、基板保持器11に保持された基板50の第1面(表側面)側から基板50の冷却を行う一方で、復路側搬送部33cによって基板保持器11を第1及び第2の金属層成膜領域4、5を通過するように搬送経路に沿って往路側搬送部33aの搬送方向と反対方向に搬送し、基板保持器11に保持された基板50の第2面(裏側面)上にスパッタリングによって金属層の成膜を行う。 In such an embodiment, in the substrate cage transport mechanism 3, the substrate cage 11 is transported in a predetermined direction along the transport path so as to pass through the cooling region 7 by the outbound side transport unit 33a, and the substrate cage is transported. While the substrate 50 is cooled from the first surface (front side surface) side of the substrate 50 held by 11, the substrate cage 11 is moved by the return path side transport portion 33c to the first and second metal layer film forming regions 4, A metal layer is transported along the transport path so as to pass through 5 in the direction opposite to the transport direction of the outward transport unit 33a, and is bonded onto the second surface (back side surface) of the substrate 50 held by the substrate cage 11. The film is formed.

その結果、本実施の形態では、十分に冷却された状態の基板50に対してスパッタリングによって金属層の成膜を行うことによって、成膜時の基板50の温度上昇を確実に防止することができ、これにより基板50の他層の膜に対する影響を抑えることができる。 As a result, in the present embodiment, by forming the metal layer on the substrate 50 in a sufficiently cooled state by sputtering, it is possible to reliably prevent the temperature rise of the substrate 50 at the time of film formation. As a result, the influence on the film of the other layer of the substrate 50 can be suppressed.

また、基板50上に金属層の厚さを厚く形成する場合には繰り返し金属層の成膜を行う必要があるが、本実施の形態においては、基板50の第2面(裏側面)にスパッタリングによる金属層が形成された基板50に対し、放射率が低い金属層側から冷却を行うことなく基板50の第1面(表側面)側から冷却を行うことによって、基板50に対して効率良く冷却を行い、その温度を確実に低下させることができ、これにより基板50の他層の膜に対する影響を抑えることができる。 Further, when forming a thick metal layer on the substrate 50, it is necessary to repeatedly form the metal layer, but in the present embodiment, sputtering is performed on the second surface (back surface) of the substrate 50. By cooling the substrate 50 on which the metal layer is formed from the above, from the first surface (front side surface) side of the substrate 50 without cooling from the metal layer side having a low radiation rate, the substrate 50 is efficiently cooled. Cooling can be performed and the temperature can be surely lowered, whereby the influence on the film of the other layer of the substrate 50 can be suppressed.

また、本実施の形態においては、搬送経路が、鉛直面に対して投影した場合に一連の環状となるように形成されており、往路側搬送部33aで冷却工程を行う一方で、復路側搬送部33cでスパッタリングによる金属層の成膜を行うことによって、基板50の他層の膜に対する影響を抑えつつ、コンパクトな通過型の成膜装置1によって基板50上に金属層の成膜を行うことができる。 Further, in the present embodiment, the transport path is formed so as to form a series of rings when projected onto the vertical surface, and while the cooling step is performed by the outward transport side transport portion 33a, the return side transport is performed. By forming a metal layer by sputtering in the portion 33c, the metal layer is formed on the substrate 50 by the compact pass-through type film forming apparatus 1 while suppressing the influence on the film of the other layer of the substrate 50. Can be done.

そして、このような本実施の形態によれば、基板50上に金属からなる裏面電極をスパッタリングによって形成する場合に効率良く確実に冷却を行うことができるヘテロ接合型太陽電池の製造技術を提供することができる。 According to the present embodiment as described above, there is provided a technique for manufacturing a heterojunction type solar cell capable of efficiently and surely cooling when a back electrode made of metal is formed on a substrate 50 by sputtering. be able to.

また、本実施の形態においては、搬送方向に対して直交する方向に複数の基板50を並べて保持する複数の基板保持器11を、搬送経路に沿って搬送するように構成されていることから、従来技術のような基板の搬送方向に複数の基板を並べて保持する基板保持器を搬送して成膜を行う場合と比較して、基板保持器の長さ及びこれに伴う余剰スペースを削減することができるので、省スペース化を達成することができる。 Further, in the present embodiment, since the plurality of substrate cages 11 for arranging and holding the plurality of substrates 50 in the direction orthogonal to the transport direction are configured to be transported along the transport path. To reduce the length of the substrate cage and the excess space associated therewith, as compared with the case of transporting a substrate cage that holds a plurality of substrates side by side in the substrate transport direction as in the prior art. Therefore, space saving can be achieved.

図19は、本発明に係る成膜装置の他の実施の形態の全体を示す概略構成図であり、以下上記実施の形態と対応する部分には同一の符号を付しその詳細な説明を省略する。 FIG. 19 is a schematic configuration diagram showing the whole of other embodiments of the film forming apparatus according to the present invention. Hereinafter, the parts corresponding to the above embodiments are designated by the same reference numerals and detailed description thereof will be omitted. To do.

本実施の形態では、基板保持器搬送機構3を挟んで真空槽2内の上部にスパッタ源81Tを有する第1の透明導電酸化物層成膜領域81が設けられ、真空槽2の下部にスパッタ源82Tを有する第2の透明導電酸化物層成膜領域82が設けられている。
これら第1及び第2の透明導電酸化物層成膜領域81、82には、所定のスパッタガスを導入するガス導入機構(図示せず)がそれぞれ設けられている。
In the present embodiment, a first transparent conductive oxide layer film forming region 81 having a sputtering source 81T is provided in the upper part of the vacuum chamber 2 with the substrate cage transport mechanism 3 sandwiched therein, and sputtering is performed in the lower part of the vacuum chamber 2. A second transparent conductive oxide layer film forming region 82 having a source 82T is provided.
Gas introduction mechanisms (not shown) for introducing a predetermined sputter gas are provided in the first and second transparent conductive oxide layer film forming regions 81 and 82, respectively.

ここで、第1の透明導電酸化物層成膜領域81は、基板50Aの第1面(本実施の形態では表側面)上に後述する第1の透明導電酸化物層54Aを形成するもので、第1の駆動輪31と第2の駆動輪32との間で搬送駆動部材33の往路側搬送部33aの上方にスパッタ源81Tが配置されている。 Here, the first transparent conductive oxide layer film-forming region 81 forms the first transparent conductive oxide layer 54A described later on the first surface (front side surface in the present embodiment) of the substrate 50A. The sputter source 81T is arranged between the first drive wheel 31 and the second drive wheel 32 above the outward transport portion 33a of the transport drive member 33.

一方、第2の透明導電酸化物層成膜領域82は、基板50Aの第2面(本実施の形態では裏側面)上に後述する第2の透明導電酸化物層58Aを形成するもので、第1の駆動輪31と第2の駆動輪32との間で搬送駆動部材33の復路側搬送部33cの下方にスパッタ源82Tが配置されている。
なお、本実施の形態の場合、第1及び第2の透明導電酸化物層成膜領域81、82は、それぞれ第2の駆動輪32の近傍に設けられている。
On the other hand, the second transparent conductive oxide layer film forming region 82 forms the second transparent conductive oxide layer 58A described later on the second surface (back surface in the present embodiment) of the substrate 50A. A sputter source 82T is arranged between the first drive wheel 31 and the second drive wheel 32 below the return path side transport portion 33c of the transport drive member 33.
In the case of the present embodiment, the first and second transparent conductive oxide layer film forming regions 81 and 82 are provided in the vicinity of the second drive wheel 32, respectively.

また、真空槽2内の基板保持器搬送機構3の上部には、金属層成膜領域9が設けられている。
本実施の形態の金属層成膜領域9は、基板50Aの第1面(本実施の形態では表側面)上に後述する金属層55Aを形成するもので、上記実施の形態の第1及び第2の金属層成膜領域4、5と同等の構成を有している。
Further, a metal layer film forming region 9 is provided on the upper part of the substrate cage transport mechanism 3 in the vacuum chamber 2.
The metal layer film forming region 9 of the present embodiment forms the metal layer 55A described later on the first surface (front side surface in the present embodiment) of the substrate 50A, and the first and first surfaces of the above embodiment. It has the same structure as the metal layer film forming regions 4 and 5 of 2.

ここで、金属層成膜領域9は、第1の駆動輪31と第2の駆動輪32との間において、搬送駆動部材33の往路側搬送部33aの上方で第1の駆動輪31の近傍にスパッタ源9Tが配置されて構成されている。 Here, the metal layer film forming region 9 is located between the first drive wheel 31 and the second drive wheel 32, above the outbound side transfer portion 33a of the transfer drive member 33, and in the vicinity of the first drive wheel 31. A sputter source 9T is arranged in the above.

真空槽2内の基板保持器搬送機構3の下部には、上記実施の形態の基板保持器11に対応する基板保持器11Aに保持された基板50Aを冷却するための冷却領域7が設けられている。
本実施の形態の冷却領域7は、第1の駆動輪31と第2の駆動輪32との間において、搬送駆動部材33の復路側搬送部33cの下方に冷却機構7aが配置され、基板保持器11Aによって保持された基板50Aに対し金属層を形成する第1面と反対側の第2面(本実施の形態では裏側面)を冷却するように構成されている。
A cooling region 7 for cooling the substrate 50A held by the substrate cage 11A corresponding to the substrate cage 11 of the above embodiment is provided in the lower part of the substrate cage transport mechanism 3 in the vacuum chamber 2. There is.
In the cooling region 7 of the present embodiment, the cooling mechanism 7a is arranged below the return path side transport portion 33c of the transport drive member 33 between the first drive wheel 31 and the second drive wheel 32, and the substrate is held. It is configured to cool the second surface (the back surface in the present embodiment) opposite to the first surface forming the metal layer with respect to the substrate 50A held by the vessel 11A.

なお、搬送駆動部材33の復路側搬送部33cを挟んで冷却機構7aの反対側、即ち復路側搬送部33cの上方には、第1の透明導電酸化物層成膜領域81及び金属層成膜領域9から冷却機構7aに対する熱を遮蔽するための遮蔽部材7cが設けられている。 The first transparent conductive oxide layer film forming region 81 and the metal layer film forming are formed on the opposite side of the cooling mechanism 7a with the return path side transport portion 33c of the transport drive member 33, that is, above the return path side transport portion 33c. A shielding member 7c for shielding heat from the region 9 to the cooling mechanism 7a is provided.

さらに、冷却機構7aと第2の透明導電酸化物層成膜領域82との間には、第2の透明導電酸化物層成膜領域82から冷却機構7aに対する熱を遮蔽するための遮蔽部材7dが設けられている。 Further, between the cooling mechanism 7a and the second transparent conductive oxide layer film forming region 82, a shielding member 7d for shielding heat from the second transparent conductive oxide layer film forming region 82 to the cooling mechanism 7a. Is provided.

このような構成を有する本実施の形態において基板50A上に成膜を行う場合には、まず、上記実施の形態と同様に、真空槽2内に導入した基板50Aを基板保持器11Aに保持させ、この基板保持器11Aを基板保持器搬送機構3の基板保持器導入部30Aに配置する(例えば、上記実施の形態の図6〜図8参照)。 When forming a film on the substrate 50A in the present embodiment having such a configuration, first, the substrate 50A introduced into the vacuum chamber 2 is held by the substrate cage 11A in the same manner as in the above embodiment. , The substrate cage 11A is arranged in the substrate cage introduction portion 30A of the substrate cage transport mechanism 3 (see, for example, FIGS. 6 to 8 of the above embodiment).

本実施の形態の基板50Aは、図24(a)に示すように、n型結晶シリコン基板51Aの第1面上に、i型アモルファスシリコン層52A及びp型アモルファスシリコン層53Aが順次設けられるとともに、このn型結晶シリコン基板51Aの第2面上に、i型アモルファスシリコン層56A及びn型アモルファスシリコン層57Aが順次設けられているものである。 In the substrate 50A of the present embodiment, as shown in FIG. 24A, an i-type amorphous silicon layer 52A and a p-type amorphous silicon layer 53A are sequentially provided on the first surface of the n-type crystalline silicon substrate 51A. The i-type amorphous silicon layer 56A and the n-type amorphous silicon layer 57A are sequentially provided on the second surface of the n-type crystalline silicon substrate 51A.

なお、本実施の形態において用いる基板保持器11Aは、上記実施の形態の基板保持器11と異なり、マスクが設けられておらず、基板50Aの両面に対して全面的に成膜を行えるように構成されている。 Unlike the substrate cage 11 of the above embodiment, the substrate cage 11A used in the present embodiment is not provided with a mask so that the film can be completely formed on both surfaces of the substrate 50A. It is configured.

本実施の形態においても、上記基板保持器搬送機構3の基板保持器導入部30Aに配置された基板保持器11Aを、図20に示すように、基板保持器搬送機構3を動作させることにより基板保持器導入部30Aから基板保持器11Aを搬送折り返し部30Bに向って移動させる。 Also in the present embodiment, the substrate cage 11A arranged in the substrate cage introduction portion 30A of the substrate cage transport mechanism 3 is operated by operating the substrate cage transport mechanism 3 as shown in FIG. The substrate cage 11A is moved from the cage introduction portion 30A toward the transport folding portion 30B.

そして、基板保持器11Aに保持された基板50Aに対し、第1の透明導電酸化物層成膜領域81を通過する際に、基板保持器11Aの上方に位置するスパッタ源81Tによって基板50Aの第1面(表側面)上にスパッタリングによる成膜を行う。
具体的には、図24(b)に示すように、基板50Aのp型アモルファスシリコン層53Aの表面に、スパッタリングによって第1の透明導電酸化物層54Aを全面的に形成する。
Then, when the substrate 50A held by the substrate cage 11A passes through the first transparent conductive oxide layer film forming region 81, the sputter source 81T located above the substrate cage 11A causes the substrate 50A to become the first. A film is formed on one surface (front side surface) by sputtering.
Specifically, as shown in FIG. 24 (b), the first transparent conductive oxide layer 54A is entirely formed on the surface of the p-type amorphous silicon layer 53A of the substrate 50A by sputtering.

その後、基板保持器搬送機構3の動作を継続することにより、上記実施の形態と同様に、基板保持器11Aを、その上下関係を変化させずに搬送折り返し部30Bの動作によって搬送方向を反転し、搬送駆動部材33の復路側搬送部33cを介して基板保持器排出部30Cに向って移動させる(図21参照)。 After that, by continuing the operation of the substrate cage transport mechanism 3, the substrate cage 11A is reversed in the transport direction by the operation of the transport folding back portion 30B without changing its vertical relationship, as in the above embodiment. , The transfer drive member 33 is moved toward the substrate cage discharge section 30C via the return path side transport section 33c (see FIG. 21).

この動作の際、基板保持器11Aに保持された基板50Aの第2面(裏側面)に対し、第2の透明導電酸化物層成膜領域82を通過する際に、基板保持器11Aの下方に位置するスパッタ源82Tによってスパッタリングによる成膜を行う。 During this operation, when passing through the second transparent conductive oxide layer film forming region 82 with respect to the second surface (back side surface) of the substrate 50A held by the substrate cage 11A, it is below the substrate cage 11A. A film is formed by sputtering with a sputtering source 82T located at.

具体的には、図24(c)に示すように、基板50Aのn型アモルファスシリコン層57Aの表面に、スパッタリングによって第2の透明導電酸化物層58Aを全面的に形成する。 Specifically, as shown in FIG. 24 (c), a second transparent conductive oxide layer 58A is entirely formed on the surface of the n-type amorphous silicon layer 57A of the substrate 50A by sputtering.

さらに、冷却領域7を通過する際に、基板保持器11Aに保持された基板50Aの第2面(裏側面)側から、所定の冷却工程を行う。
その後、例えば図21及び図22に示すように、基板搬入搬出機構6の支持部62を基板保持器取り出し位置に配置して搬送ロボット64を用い、第1及び第2の透明導電酸化物層54A、58Aの成膜が終了した基板50Aを保持した基板保持器11Aを、基板保持器排出部30Cから基板搬入搬出機構6側に取り出して搬送ロボット64と共に支持部62上に配置する。
Further, when passing through the cooling region 7, a predetermined cooling step is performed from the second surface (back side surface) side of the substrate 50A held by the substrate cage 11A.
After that, as shown in FIGS. 21 and 22, for example, the support portion 62 of the substrate loading / unloading mechanism 6 is arranged at the substrate cage take-out position, and the transfer robot 64 is used to use the first and second transparent conductive oxide layers 54A. , The substrate cage 11A holding the substrate 50A for which the film formation of 58A has been completed is taken out from the substrate cage discharge portion 30C to the substrate loading / unloading mechanism 6 side and arranged on the support portion 62 together with the transfer robot 64.

そして、図23に示すように、基板搬入搬出機構6の支持部62を基板保持器受け渡し位置まで上昇させ、基板保持器11Aの高さが搬送駆動部材33の往路側搬送部33aと同等の高さ位置となるように配置し、基板搬入搬出機構6の支持部62上の搬送ロボット64によって基板保持器11Aを基板保持器搬送機構3の基板保持器導入部30Aに受け渡して配置する。 Then, as shown in FIG. 23, the support portion 62 of the substrate loading / unloading mechanism 6 is raised to the substrate cage delivery position, and the height of the substrate cage 11A is as high as the outward path side transport portion 33a of the transfer drive member 33. The substrate cage 11A is delivered to the substrate cage introduction portion 30A of the substrate cage transport mechanism 3 by the transfer robot 64 on the support portion 62 of the substrate loading / unloading mechanism 6 and arranged so as to be in the vertical position.

さらに、基板保持器搬送機構3を上述したように動作させることにより、基板保持器11Aを、搬送駆動部材33の往路側搬送部33a上を搬送折り返し部30Bに向って再度搬送する。
この動作の際、基板保持器11Aに保持された基板50Aの第1面(表側面)上に、金属層成膜領域9を通過する際に、基板保持器11Aの上方に位置するスパッタ源9Tによってスパッタリングによる成膜を行う。
Further, by operating the substrate cage transport mechanism 3 as described above, the substrate cage 11A is transported again on the outward transport side transport portion 33a of the transport drive member 33 toward the transport turn-back portion 30B.
During this operation, the sputtering source 9T located above the substrate cage 11A when passing through the metal layer film forming region 9 on the first surface (front side surface) of the substrate 50A held by the substrate cage 11A. The film is formed by sputtering.

具体的には、図24(d)に示すように、基板50Aの第1の透明導電酸化物層54Aの表面に、スパッタリングによって金属層55Aを全面的に形成する。
以上の工程により、本実施の形態における、1回目の透明導電酸化物層の形成工程、冷却工程、金属層形成工程が終了し、成膜後の基板59Aを得る。
Specifically, as shown in FIG. 24D, the metal layer 55A is entirely formed on the surface of the first transparent conductive oxide layer 54A of the substrate 50A by sputtering.
By the above steps, the first transparent conductive oxide layer forming step, cooling step, and metal layer forming step in the present embodiment are completed, and the substrate 59A after film formation is obtained.

一方、上述した金属層55Aの厚さをより厚く形成する場合には、上述した第1及び第2の透明導電酸化物層54A、58Aの形成工程を行わず、上述した金属層形成工程及び冷却工程を繰り返す。 On the other hand, when the above-mentioned metal layer 55A is formed to be thicker, the above-mentioned first and second transparent conductive oxide layers 54A and 58A are not formed, and the above-mentioned metal layer forming step and cooling are performed. Repeat the process.

なお、第1の透明導電酸化物層54A上に形成された金属層55Aから太陽電池用の線状の電極部を作成するには、真空槽2から成膜後の基板59Aを取り出し、公知のエッチング等の処理を行えばよい。 In order to prepare a linear electrode portion for a solar cell from the metal layer 55A formed on the first transparent conductive oxide layer 54A, the substrate 59A after the film formation is taken out from the vacuum chamber 2 and known. Processing such as etching may be performed.

以上述べたように本実施の形態では、単一の真空雰囲気が形成される真空槽2内に、基板保持器11Aを搬送経路に沿って所定方向に搬送する往路側搬送部33aと、基板保持器11Aを搬送経路に沿って往路側搬送部33aの搬送方向と反対方向に搬送する復路側搬送部33cと、基板保持器11Aを上下関係を維持した状態で往路側搬送部33aから復路側搬送部33cに向って折り返して搬送する搬送折り返し部30Bとを有する基板保持器搬送機構3を備え、往路側搬送部33aが、第1の透明導電酸化物層成膜領域81を通過し、かつ、復路側搬送部33cが、第2の透明導電酸化物層成膜領域82を通過するとともに、往路側搬送部33aが、金属層成膜領域9を通過し、かつ、復路側搬送部33cが、冷却領域7を通過するように設けられている。 As described above, in the present embodiment, the outbound side conveying portion 33a for conveying the substrate cage 11A in a predetermined direction along the conveying path and the substrate holding in the vacuum tank 2 in which a single vacuum atmosphere is formed. The return path side transport section 33c that transports the vessel 11A along the transport path in the direction opposite to the transport direction of the outward path side transport section 33a, and the board cage 11A are transported from the outward path side transport section 33a to the return path side while maintaining the vertical relationship. A substrate cage transport mechanism 3 having a transport-folding portion 30B that folds back and transports toward the portion 33c is provided, and the outward-passing transport portion 33a passes through the first transparent conductive oxide layer film-forming region 81 and is conveyed. The return path side transport section 33c passes through the second transparent conductive oxide layer film forming region 82, the outward path side transport section 33a passes through the metal layer film formation region 9, and the return path side transport section 33c is formed. It is provided so as to pass through the cooling region 7.

このような本実施の形態では、基板保持器搬送機構3において、例えば往路側搬送部33a及び復路側搬送部33cを介して基板保持器11Aを第1及び第2の透明導電酸化物層成膜領域81、82を通過するように搬送経路に沿って所定方向及び反対方向に搬送し、基板保持器11Aに保持された基板50Aの両面上にスパッタリングによって第1及び第2の透明導電酸化物層の成膜を行い、その後、往路側搬送部33aによって基板保持器11Aを金属層成膜領域9を通過するように搬送経路に沿って所定方向に搬送し、基板保持器11Aに保持された基板50Aの第1面(表側面)上にスパッタリングによって金属層の成膜を行い、かつ、復路側搬送部33cによって基板保持器11Aを冷却領域7を通過するように搬送経路に沿って往路側搬送部33aの搬送方向と反対方向に搬送し、基板保持器11Aに保持された基板50Aの第2面(裏側面)側から冷却を行うことができる。 In such an embodiment, in the substrate cage transport mechanism 3, the substrate cage 11A is formed with the first and second transparent conductive oxide layers, for example, via the outward transport side transport portion 33a and the return route side transport portion 33c. The first and second transparent conductive oxide layers are conveyed in a predetermined direction and in opposite directions along a transfer path so as to pass through the regions 81 and 82, and are subjected to sputtering on both surfaces of the substrate 50A held by the substrate cage 11A. After that, the substrate cage 11A is conveyed in a predetermined direction along the conveying path so as to pass through the metal layer film forming region 9 by the outbound side conveying portion 33a, and the substrate held by the substrate cage 11A is conveyed. A metal layer is formed on the first surface (front side surface) of 50A by sputtering, and the substrate cage 11A is transported along the transport path along the transport path so as to pass through the cooling region 7 by the return path side transport unit 33c. The portion 33a can be conveyed in a direction opposite to the conveying direction, and cooling can be performed from the second surface (back side surface) side of the substrate 50A held by the substrate cage 11A.

その結果、本実施の形態では、基板両面に第1及び第2の透明導電酸化物層が形成され、且つ冷却工程によって十分に冷却された状態の基板50Aに対してスパッタリングによって金属層の成膜を行うことにより、成膜時の基板50Aの温度上昇を確実に防止することができ、これにより他層の膜に対する影響を抑えることができる。 As a result, in the present embodiment, the first and second transparent conductive oxide layers are formed on both surfaces of the substrate, and a metal layer is formed by sputtering on the substrate 50A in a state of being sufficiently cooled by the cooling step. By performing the above, it is possible to surely prevent the temperature rise of the substrate 50A at the time of film formation, and thereby it is possible to suppress the influence on the films of other layers.

また、基板両面に第1及び第2の透明導電酸化物層が形成され且つ第1面(表側面)にスパッタリングによる金属層55Aが形成された基板59Aに対して冷却を行う場合には、放射率が低い金属層側から冷却を行うことなく金属層が形成されていない基板50Aの第2面(裏側面)側から冷却を行うことによって、基板50Aに対して効率良く冷却を行い、その温度を確実に低下させることができ、これにより基板50Aの他層の膜に対する影響を抑えることができる。 Further, when cooling the substrate 59A in which the first and second transparent conductive oxide layers are formed on both surfaces of the substrate and the metal layer 55A is formed by sputtering on the first surface (front side surface), radiation is emitted. By cooling from the second surface (back side surface) side of the substrate 50A on which the metal layer is not formed without cooling from the metal layer side having a low rate, the substrate 50A is efficiently cooled and its temperature. Can be reliably reduced, whereby the influence of the substrate 50A on the film of the other layer can be suppressed.

さらに、基板59A上に金属層55Aの厚さを厚く形成する場合には繰り返し金属層の成膜を行う必要があるが、本実施の形態においても、上記実施の形態と同様に金属層55Aの成膜の際に毎回冷却を行うことができるので、効率良く冷却を行い基板50Aの温度上昇を確実に防止することができる。 Further, in the case of forming the metal layer 55A thickly on the substrate 59A, it is necessary to repeatedly form the metal layer, but also in the present embodiment, the metal layer 55A is similarly formed in the above embodiment. Since cooling can be performed every time the film is formed, it is possible to efficiently cool the substrate and reliably prevent the temperature of the substrate 50A from rising.

そして、このような本実施の形態によれば、基板50A上に金属からなる表面電極をスパッタリングによって形成する場合に効率良く確実に冷却を行うことができるヘテロ接合型太陽電池の製造技術を提供することができる。 According to the present embodiment, there is provided a technique for manufacturing a heterojunction solar cell capable of efficiently and surely cooling when a surface electrode made of metal is formed on a substrate 50A by sputtering. be able to.

なお、本発明は上述した実施の形態に限られず、種々の変更を行うことができる。
例えば上記実施の形態では、基板保持器11として、長尺枠状の本体部11aの長手方向に複数の基板50を一列に並べて保持するものを例にとって説明したが、本発明はこれに限られず、例えば本体部11aの長手方向に複数の基板50を複数列(二〜三列)に並べて保持するように構成することもできる。
The present invention is not limited to the above-described embodiment, and various modifications can be made.
For example, in the above embodiment, as the substrate cage 11, a plurality of substrates 50 are arranged and held in a row in the longitudinal direction of the long frame-shaped main body portion 11a, but the present invention is not limited to this. For example, a plurality of substrates 50 may be arranged and held in a plurality of rows (two to three rows) in the longitudinal direction of the main body portion 11a.

さらにまた、上記実施の形態では、ヘテロ接合型太陽電池の基板50、50Aの片面に電極用の金属層を形成する場合を例にとって説明したが、本発明はこれに限られず、成膜対象基板の片面上に種々の金属スパッタ膜を形成する場合に適用することができる。
ただし、本発明は、ヘテロ接合型太陽電池の成膜対象基板の片面に電極用の金属層を形成する場合に特に有効となるものである。
Furthermore, in the above embodiment, the case where the metal layer for the electrode is formed on one side of the substrates 50 and 50A of the heterojunction type solar cell has been described as an example, but the present invention is not limited to this, and the substrate to be filmed is not limited to this. It can be applied when various metal sputtered films are formed on one side of the above.
However, the present invention is particularly effective when a metal layer for an electrode is formed on one side of a substrate to be formed into a heterojunction solar cell.

一方、上記実施の形態においては、搬送駆動部材33のうち上側の部分を第1の搬送部である往路側搬送部33aとするとともに、搬送駆動部材33のうち下側の部分を第2の搬送部である復路側搬送部33cとするようにしたが、本発明はこれに限られず、これらの上下関係を逆にすることもできる。
そして、これに伴い、金属層形成領域と冷却領域の上下関係を逆にすることもできる。
On the other hand, in the above-described embodiment, the upper portion of the transport drive member 33 is the outward transport portion 33a, which is the first transport portion, and the lower portion of the transport drive member 33 is the second transport portion. Although the return-side transport portion 33c, which is a portion, is used, the present invention is not limited to this, and the vertical relationship between them can be reversed.
Along with this, the vertical relationship between the metal layer forming region and the cooling region can be reversed.

さらに、上記実施の形態では、成膜対象基板の表側面を第1面とし、裏側面を第2面としたが、成膜対象基板の裏側面を第1面とし、表側面を第2面とすることもできる。 Further, in the above embodiment, the front side surface of the film-forming target substrate is the first surface and the back side surface is the second surface, but the back side surface of the film-forming target substrate is the first surface and the front side surface is the second surface. It can also be.

1…成膜装置
2…真空槽
3…基板保持器搬送機構
4…第1の金属層成膜領域
4T…スパッタ源
5…第2の金属層成膜領域
5T…スパッタ源
6…基板搬入搬出機構
7…冷却領域
11…基板保持器
30A…基板保持器導入部
30B…搬送折り返し部
30C…基板保持器排出部
33…搬送駆動部材
33a…往路側搬送部(第1の搬送部)
33b…折り返し部
33c…復路側搬送部(第2の搬送部)
50…成膜対象基板
59…成膜済の成膜対象基板
1 ... Film formation device 2 ... Vacuum tank 3 ... Substrate cage transport mechanism 4 ... First metal layer film formation region 4T ... Sputter source 5 ... Second metal layer film formation region 5T ... Sputter source 6 ... Substrate loading / unloading mechanism 7 ... Cooling region 11 ... Board cage 30A ... Board cage introduction unit 30B ... Transfer folding unit 30C ... Board cage discharge unit 33 ... Transfer drive member 33a ... Outward route side transfer unit (first transport unit)
33b ... Folded portion 33c ... Return route side transport section (second transport section)
50 ... Substrate to be filmed 59 ... Substrate to be filmed

Claims (9)

単一の真空雰囲気が形成される真空槽と、
前記真空槽内に設けられ、基板保持器に保持された成膜対象基板に対して第1面側から冷却を行う冷却領域と、
前記真空槽内に設けられ、前記基板保持器に保持された前記成膜対象基板の第2面上に金属層の成膜を行うスパッタ源を有する金属層成膜領域と、
鉛直面に対する投影形状が一連の環状となるように形成され、前記金属層成膜領域及び前記冷却領域を通過するように設けられた搬送経路と、
前記基板保持器を水平にした状態で前記搬送経路に沿って搬送する基板保持器搬送機構とを備え、
前記基板保持器搬送機構は、前記基板保持器を前記搬送経路に沿って所定方向に搬送する第1の搬送部と、前記基板保持器を前記搬送経路に沿って前記第1の搬送部の搬送方向と反対方向に搬送する第2の搬送部と、前記基板保持器を上下関係を維持した状態で前記第1の搬送部から前記第2の搬送部に向って折り返して搬送する搬送折り返し部とを有し、
前記第1の搬送部が、前記金属層成膜領域及び前記冷却領域のうち一方を通過し、かつ、前記第2の搬送部が、前記金属層成膜領域及び前記冷却領域のうち他方を通過するように設けられている成膜装置。
A vacuum chamber in which a single vacuum atmosphere is formed,
A cooling region provided in the vacuum chamber to cool the film-forming target substrate held in the substrate cage from the first surface side, and
A metal layer film forming region having a sputtering source for forming a metal layer on the second surface of the film forming target substrate provided in the vacuum chamber and held in the substrate cage.
A transport path formed so that the projected shape with respect to the vertical plane is a series of rings and passed through the metal layer film forming region and the cooling region.
It is provided with a substrate cage transport mechanism that transports the substrate cage horizontally along the transport path.
The substrate cage transport mechanism transports a first transport unit that transports the substrate cage in a predetermined direction along the transport path, and a transport unit that transports the substrate cage along the transport path. A second transport section that transports in the direction opposite to the direction, and a transport folding section that folds back and transports the substrate cage from the first transport section toward the second transport section while maintaining the vertical relationship. Have,
The first transport unit passes through one of the metal layer film forming region and the cooling region, and the second transport portion passes through the other of the metal layer film forming region and the cooling region. A film forming apparatus provided so as to perform.
単一の真空雰囲気が形成される真空槽と、
前記真空槽内に設けられ、基板保持器に保持された成膜対象基板の第1面上に透明導電酸化物層の成膜を行うスパッタ源を有する第1の透明導電酸化物層成膜領域と、
前記真空槽内に設けられ、前記基板保持器に保持された前記成膜対象基板の第2面上に透明導電酸化物層の成膜を行うスパッタ源を有する第2の透明導電酸化物層成膜領域と、
前記真空槽内に設けられ、前記基板保持器に保持された前記成膜対象基板に対して第2面側から冷却を行う冷却領域と、
前記真空槽内に設けられ、前記基板保持器に保持された前記成膜対象基板の第1面上に金属層の成膜を行うスパッタ源を有する金属層成膜領域と、
鉛直面に対する投影形状が一連の環状となるように形成され、前記第1及び第2の透明導電酸化物層成膜領域、前記金属層成膜領域及び前記冷却領域を通過するように設けられた搬送経路と、
前記基板保持器を水平にした状態で前記搬送経路に沿って搬送する基板保持器搬送機構とを備え、
前記基板保持器搬送機構は、前記基板保持器を前記搬送経路に沿って所定方向に搬送する第1の搬送部と、前記基板保持器を前記搬送経路に沿って前記第1の搬送部の搬送方向と反対方向に搬送する第2の搬送部と、前記基板保持器を上下関係を維持した状態で前記第1の搬送部から前記第2の搬送部に向って折り返して搬送する搬送折り返し部とを有し、
前記第1の搬送部が、前記第1及び第2の透明導電酸化物層成膜領域のうち一方を通過し、かつ、前記第2の搬送部が、前記第1及び第2の透明導電酸化物層成膜領域のうち他方を通過するとともに、
前記第1の搬送部が、前記金属層成膜領域及び前記冷却領域のうち一方を通過し、かつ、前記第2の搬送部が、前記金属層成膜領域及び前記冷却領域のうち他方を通過するように設けられている成膜装置。
A vacuum chamber in which a single vacuum atmosphere is formed,
A first transparent conductive oxide layer film forming region provided in the vacuum chamber and having a sputtering source for forming a transparent conductive oxide layer on the first surface of the substrate to be filmed held in a substrate cage. When,
A second transparent conductive oxide layer having a sputter source provided in the vacuum chamber and having a sputter source for forming a transparent conductive oxide layer on the second surface of the film-forming target substrate held in the substrate cage. Membrane area and
A cooling region provided in the vacuum chamber and held in the substrate cage to cool the film-forming target substrate from the second surface side.
A metal layer film forming region having a sputtering source for forming a metal layer on the first surface of the film forming target substrate provided in the vacuum chamber and held in the substrate cage.
The projected shape with respect to the vertical plane is formed so as to form a series of rings, and is provided so as to pass through the first and second transparent conductive oxide layer film forming regions, the metal layer film forming region, and the cooling region. Transport route and
It is provided with a substrate cage transport mechanism that transports the substrate cage horizontally along the transport path.
The substrate cage transport mechanism transports a first transport unit that transports the substrate cage in a predetermined direction along the transport path, and a transport unit that transports the substrate cage along the transport path. A second transport section that transports in the direction opposite to the direction, and a transport folding section that folds back and transports the substrate cage from the first transport section toward the second transport section while maintaining the vertical relationship. Have,
The first transport section passes through one of the first and second transparent conductive oxide layer film forming regions, and the second transport section is the first and second transparent conductive oxidation. While passing through the other of the material layer film formation regions
The first transport unit passes through one of the metal layer film forming region and the cooling region, and the second transport portion passes through the other of the metal layer film forming region and the cooling region. A film forming apparatus provided so as to perform.
成膜後の成膜対象基板を保持した前記基板保持器を前記基板保持器搬送機構から取り出し、取り出した当該基板保持器を前記基板保持器搬送機構に導入するように構成されている請求項1又は2のいずれか1項記載の成膜装置。 Claim 1 is configured such that the substrate cage holding the substrate to be film-formed after film formation is taken out from the substrate cage transport mechanism, and the taken-out substrate cage is introduced into the substrate cage transport mechanism. Or the film forming apparatus according to any one of 2. 前記基板保持器は、当該搬送方向に対して直交する方向に複数の成膜対象基板を並べて保持するように構成されている請求項1乃至3のいずれか1項記載の成膜装置。 The film forming apparatus according to any one of claims 1 to 3, wherein the substrate cage is configured to arrange and hold a plurality of film forming target substrates in a direction orthogonal to the transport direction. 請求項1、3又は4のいずれか1項記載の成膜装置を用いた成膜方法であって、
前記基板保持器搬送機構の前記第1及び第2の搬送部のうち一方によって前記基板保持器を前記冷却領域を通過するように前記搬送経路に沿って所定方向に搬送し、前記基板保持器に保持された前記成膜対象基板の第1面側から冷却を行う冷却工程と、
前記基板保持器搬送機構の前記第1及び第2の搬送部のうち他方によって前記基板保持器を前記金属層成膜領域を通過するように前記搬送経路に沿って前記所定方向と反対方向に搬送し、前記基板保持器に保持された前記成膜対象基板の第2面上にスパッタリングによって金属層の成膜を行う金属層成膜工程とを有する成膜方法。
A film forming method using the film forming apparatus according to any one of claims 1, 3 or 4.
The substrate cage is conveyed in a predetermined direction along the transfer path so as to pass through the cooling region by one of the first and second transfer portions of the substrate cage transfer mechanism, and is transferred to the substrate cage. A cooling step of cooling from the first surface side of the held substrate to be filmed, and
The substrate cage is transported by the other of the first and second transport portions of the substrate cage transport mechanism along the transport path in a direction opposite to the predetermined direction so as to pass through the metal layer film forming region. A film forming method comprising a metal layer film forming step of forming a metal layer on the second surface of the film forming target substrate held by the substrate cage by sputtering.
請求項2記載の成膜装置を用いた成膜方法であって、
前記基板保持器搬送機構の第1の搬送部によって前記基板保持器を前記第1の透明導電酸化物層成膜領域を通過するように前記搬送経路に沿って所定方向に搬送し、当該基板保持器に保持された成膜対象基板の第1面上にスパッタリングによって第1の透明導電酸化物層を形成する工程と、
前記基板保持器搬送機構の第2の搬送部によって前記基板保持器を前記第2の透明導電酸化物層成膜領域を通過するように前記搬送経路に沿って前記所定方向と反対方向に搬送し、当該基板保持器に保持された前記成膜対象基板の第2面上にスパッタリングによって第2の透明導電酸化物層を形成する工程と、
前記基板保持器搬送機構の前記第2の搬送部によって前記基板保持器を前記冷却領域を通過するように前記搬送経路に沿って前記所定方向と反対方向に搬送し、前記基板保持器に保持された前記成膜対象基板に対して第2面側から冷却を行う冷却工程と、
前記基板保持器搬送機構の前記第1の搬送部によって前記基板保持器を前記金属層成膜領域を通過するように前記搬送経路に沿って前記所定方向に搬送し、前記基板保持器に保持された前記成膜対象基板の第1面上にスパッタリングによって金属層の成膜を行う金属層成膜工程とを有する成膜方法。
A film deposition method using the film deposition apparatus of claim 2 Symbol placement,
The substrate cage is transported in a predetermined direction along the transport path so as to pass through the first transparent conductive oxide layer film forming region by the first transport portion of the substrate cage transport mechanism, and the substrate is held. A step of forming a first transparent conductive oxide layer by sputtering on the first surface of the film-forming target substrate held in the vessel, and
The substrate cage is conveyed in the direction opposite to the predetermined direction along the transfer path so as to pass through the second transparent conductive oxide layer film forming region by the second transfer portion of the substrate cage transfer mechanism. A step of forming a second transparent conductive oxide layer on the second surface of the film-forming target substrate held by the substrate cage by sputtering.
The substrate cage is conveyed by the second transfer portion of the substrate cage transfer mechanism along the transfer path in the direction opposite to the predetermined direction so as to pass through the cooling region, and is held by the substrate cage. A cooling step of cooling the film-forming target substrate from the second surface side,
The substrate cage is transported in the predetermined direction along the transport path so as to pass through the metal layer film forming region by the first transport portion of the substrate cage transport mechanism, and is held by the substrate cage. A film forming method including a metal layer film forming step of forming a metal layer on the first surface of the film forming target substrate by sputtering.
成膜後の成膜対象基板を保持した前記基板保持器を前記基板保持器搬送機構から取り出し、取り出した当該基板保持器を前記基板保持器搬送機構に導入し、前記冷却工程及び前記金属層成膜工程を複数回行う工程を有する請求項6記載の成膜方法。 The substrate cage holding the film-forming target substrate after film formation is taken out from the substrate cage transport mechanism, and the taken-out substrate cage is introduced into the substrate cage transport mechanism, and the cooling step and the metal layering are performed. 6 Symbol mounting film forming method according to claim comprising the step of performing a plurality of times the membrane process. 請求項1、3又は4のいずれか1項記載の成膜装置を用いた太陽電池の製造方法であって、
n型単結晶シリコン基板の第1面上に、アモルファスシリコン層及びテクスチャー構造の反射防止膜が順次設けられるとともに、前記n型単結晶シリコン基板の第2面上に、i型アモルファスシリコン層及びp型アモルファスシリコン層とn型アモルファスシリコン層が隣接して設けられた成膜対象基板を用意し、
前記基板保持器搬送機構の前記第1及び第2の搬送部のうち一方によって前記基板保持器を前記冷却領域を通過するように前記搬送経路に沿って所定方向に搬送し、前記基板保持器に保持された前記成膜対象基板に対して第1面側から冷却を行う冷却工程と、
前記基板保持器搬送機構の前記第1及び第2の搬送部のうち他方によって前記基板保持器を前記金属層成膜領域を通過するように前記搬送経路に沿って前記所定方向と反対方向に搬送し、前記基板保持器に保持された前記成膜対象基板の第2面上にスパッタリングによって裏面電極用の金属層の成膜を行う金属層成膜工程とを有する太陽電池の製造方法。
A method for manufacturing a solar cell using the film forming apparatus according to any one of claims 1, 3 or 4.
An amorphous silicon layer and an antireflection film having a texture structure are sequentially provided on the first surface of the n-type single crystal silicon substrate, and the i-type amorphous silicon layer and p are placed on the second surface of the n-type single crystal silicon substrate. Prepare a substrate for film formation in which a type amorphous silicon layer and an n-type amorphous silicon layer are provided adjacent to each other.
The substrate cage is conveyed in a predetermined direction along the transfer path so as to pass through the cooling region by one of the first and second transfer portions of the substrate cage transfer mechanism, and is transferred to the substrate cage. A cooling step of cooling the held substrate to be filmed from the first surface side, and
The substrate cage is transported by the other of the first and second transport portions of the substrate cage transport mechanism along the transport path in a direction opposite to the predetermined direction so as to pass through the metal layer film forming region. A method for manufacturing a solar cell, which comprises a metal layer film forming step of forming a metal layer for a back surface electrode on a second surface of the film forming target substrate held by the substrate cage by sputtering.
請求項2記載の成膜装置を用いた太陽電池の製造方法であって、
n型結晶シリコン基板の第1面上に、i型アモルファスシリコン層及びp型アモルファスシリコン層が順次設けられるとともに、前記n型結晶シリコン基板の第2面上に、i型アモルファスシリコン層及びn型アモルファスシリコン層が順次設けられた成膜対象基板を用意し、
前記基板保持器搬送機構の第1の搬送部によって前記基板保持器を前記第1の透明導電酸化物層成膜領域を通過するように前記搬送経路に沿って所定方向に搬送し、当該基板保持器に保持された成膜対象基板の第1面上にスパッタリングによって第1の透明導電酸化物層を形成する工程と、
前記基板保持器搬送機構の第2の搬送部によって前記基板保持器を前記第2の透明導電酸化物層成膜領域を通過するように前記搬送経路に沿って前記所定方向と反対方向に搬送し、当該基板保持器に保持された前記成膜対象基板の第2面上にスパッタリングによって第2の透明導電酸化物層を形成する工程と、
前記基板保持器搬送機構の前記第2の搬送部によって前記基板保持器を前記冷却領域を通過するように前記搬送経路に沿って前記所定方向と反対方向に搬送し、前記基板保持器に保持された前記成膜対象基板に対して第2面側から冷却を行う冷却工程と、
前記基板保持器搬送機構の前記第1の搬送部によって前記基板保持器を前記金属層成膜領域を通過するように前記搬送経路に沿って前記所定方向に搬送し、前記基板保持器に保持された前記成膜対象基板の第1面上にスパッタリングによって表面電極用の金属層の成膜を行う金属層成膜工程とを有する太陽電池の製造方法。
A method of manufacturing a solar cell using the film deposition apparatus of claim 2 Symbol placement,
An i-type amorphous silicon layer and a p-type amorphous silicon layer are sequentially provided on the first surface of the n-type crystalline silicon substrate, and the i-type amorphous silicon layer and the n-type are provided on the second surface of the n-type crystalline silicon substrate. Prepare a substrate for film formation on which amorphous silicon layers are sequentially provided,
The substrate cage is transported in a predetermined direction along the transport path so as to pass through the first transparent conductive oxide layer film forming region by the first transport portion of the substrate cage transport mechanism, and the substrate is held. A step of forming a first transparent conductive oxide layer by sputtering on the first surface of the film-forming target substrate held in the vessel, and
The substrate cage is conveyed in the direction opposite to the predetermined direction along the transfer path so as to pass through the second transparent conductive oxide layer film forming region by the second transfer portion of the substrate cage transfer mechanism. A step of forming a second transparent conductive oxide layer on the second surface of the film-forming target substrate held by the substrate cage by sputtering.
The substrate cage is conveyed by the second transfer portion of the substrate cage transfer mechanism along the transfer path in the direction opposite to the predetermined direction so as to pass through the cooling region, and is held by the substrate cage. A cooling step of cooling the film-forming target substrate from the second surface side,
The substrate cage is transported in the predetermined direction along the transport path so as to pass through the metal layer film forming region by the first transport portion of the substrate cage transport mechanism, and is held by the substrate cage. A method for manufacturing a solar cell, which comprises a metal layer film forming step of forming a metal layer for a surface electrode on the first surface of the film forming target substrate by sputtering.
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