JP6796491B2 - Equipment and methods for supplying process gas mixtures to CVD or PVD coating equipment - Google Patents

Description

The present invention relates to a gas supply device, the present invention has an inlet duct for supplying each gas flow provided from each gas source to the first mixing chamber, and particularly one or a plurality of first gas deflections in the first mixing chamber. The element is used to deflect one or more of each gas stream and mix each gas stream, with an overflow barrier, and the first gas stream consisting of all the gas streams exiting the first mixing chamber is an overflow barrier Flows into the second mixing chamber through the second mixing chamber, where one or more deflections of the first gas stream occur, especially with the use of the second gas deflecting element, and CVD or PVD coating from the second mixing chamber. It has a gas outlet duct for the outlet of the gas flow to the gas inlet member of the device.

The present invention further comprises the following steps relating to a method of supplying process gas to a gas inlet member of a CVD or PVD coating apparatus.
− Steps to supply multiple process gases to each gas source;
− The step of sending process gas from each gas source to the first mixing chamber through the inlet duct with gas streams separated from each other;
-The step of deflecting each gas flow and combining and mixing each gas flow, especially using the first gas deflection element in the first mixing chamber;
-A step in which the first gas stream consisting of all the gases overflows into the second mixing chamber over the overflow barrier;
-In particular, the step of deflecting the gas flow using the second gas deflection element;
-Step of sending the gas flow consisting of all the gas flows from the gas outlet duct to the gas inlet member

The gas mixers are for mixing different gases, each of which is introduced into a premix chamber using, for example, a tube-shaped inlet duct, where the first mixing of gases occurs. The gases are deflected there and supplied to a second mixing chamber, for example a gas mixing tube. Patent Document 1 discloses such a gas mixing device, in which a vortex is introduced into the gas to promote mixing with each other. A gas deflection device in the form of an insert inserted into the gas mixing tube is provided.

The mixing device considered here is used in a CVD or PVD device. Such an apparatus has a reactor housing, comprising a gas inlet member arranged therein, which can be particularly in the shape of a shower head, and a susceptor on which the substrate is placed. The susceptor can be heated or cooled depending on whether a thermally excited chemical reaction should occur on the substrate surface or only condensation should occur on the substrate surface. The gas mixture is introduced into the process chamber through a gas inlet member located above the substrate. The gas mixing means is used to mix a gas mixture composed of each of a plurality of gases.

Patent Document 2 discloses a CVD process chamber including a gas inlet member configured as, for example, a shower head, into which process gases different from each other can be supplied. There is a gas mixer upstream of the shower head.

Patent Document 3 discloses a ring chamber surrounding the shower head, in which the entire process gas is mixed. The mixing chamber arranged on the upstream side of the gas inlet member in the flow direction is also disclosed in Patent Document 4.

Patent Document 5 discloses a gas mixer having a flat cylindrical housing shape. The housing contains two mixing chambers. In the mixing chambers arranged radially outward, different process gases are supplied to the premixing chambers located radially outward through the inlet ducts arranged in a star shape. The premix chamber has a first gas deflection element, which diverts each gas flow supplied to the mixing chamber. Thereby, each gas flow is deflected in a direction intersecting the extending surface of the inlet plane where the inlet duct exists. As a result, each gas flow overflows the overflow barrier and reaches the second mixing chamber. The second mixing chamber has a gas outlet duct which is arranged in the center of the gas mixing device and opens downward, and a second gas deflection element is arranged in the second mixing chamber. This document not disclosed in advance corresponds to a kind of the present invention.

Patent Document 6 discloses a CVD reactor including a gas mixing system located above the gas inlet member and directly above the ceiling of the process chamber.

Patent Document 7 discloses a gas mixing device including a first mixing chamber arranged in a center, which is supplied from a plurality of star-shaped gas inlet ducts. Since the introduced gas flow flows outward in the radial direction, it passes through the vortex grid in the axial direction while swirling in the central mixing chamber and exits from the first mixing chamber, in which case the gas flow is about 90. ° Can be turned around. The gas flow premixed in the central first mixing chamber flows to the second mixing chamber arranged radially outside the central first mixing chamber, and flows from the star-shaped outlet duct to the gas inlet member. get out.

Patent Document 8 discloses a CVD reactor including a shower head and a mixing device located above the shower head for mixing process gas. The process gas provided in the plasma generator flows through the inlet ducts extending parallel to each other and enters the stirring chamber, where stirring occurs.

Patent Document 9 discloses a gas mixing device for mixing two gases, and the gases enter the first mixing chamber through gas inlet ducts separated from each other. The first mixing chamber is separated from the diffusion chamber by a partition wall. The two process gases premixed in the first mixing chamber and passed through the inlet duct move through the openings in the bulkhead to the diffusion chamber where further mixing of the process gases occurs.

Patent Document 10 discloses a gas mixing device for mixing a plurality of process gases, and the gases enter the mixing chamber through a gas inlet duct extending radially toward the center. The mixing chamber is a retention chamber arranged around the center in an annular shape through which the process gas must flow in a meandering shape to be mixed. The entire gas flow exits the gas inlet member through a centrally located gas outlet hole.

Patent Document 11 discloses a CVD reactor provided with a reactor cover, on which a source and a mixing chamber are arranged. The mixing chamber is central and is supplied through a gas inlet duct that extends radially with respect to the center. Mixing of each gas stream occurs in the mixing chamber.

Patent Document 12 discloses a gas deflection element having a tubular cross-sectional shape. From the wall of the cylindrical tube, a curved deflector with a free end projects into the flow duct of the tube.

U.S. Patent Application Publication No. 2009/0120364 U.S. Pat. No. 7,540,305 Publication of German Patent Application No. 10 2005 003 984 U.S. Patent Application Publication No. 2003/0019428 German Patent Application Publication No. 10 2013 113 817 European Patent No. 1 252 363 U.S. Pat. No. 6,758,591 U.S. Pat. No. 6,495,233 European Patent No. 1 452 626 U.S. Pat. No. 6,068,703 U.S. Patent Application Publication No. 2011/0223334 International Publication No. 97/35 107

An object of the present invention is to technically improve a gas supply device or a method for supplying process gas to a gas inlet member.

This object is realized by the present invention specified in the claims.

The advantages of the individual features, which are the gist of the claims, are as follows. The apparatus according to the present invention is configured such that the effective stroke lengths of the gas flows from the gas source to the gas inlet member are the same as each other. Since the effective stroke lengths of the gas streams are the same as each other, different gases have the same residence time in the gas supply device. The same dwell time can be maintained evenly by inlet ducts of different diameters or by different pressure ratios due to different cross-sectional shapes of the mixing chamber. However, it is also possible to compensate for different diameters with different tube lengths. A symmetrical configuration is preferred so that the cross sections of the inlet duct or mixing chamber are evenly shaped. Under its effective stroke length, especially its flow path, it is understood that each gas stream passes through the first mixing chamber at the same time along it. Possible geometric differences in each flow duct can be compensated for by different pressure ratios.

If all inlet ducts have the same cross section and open into the mixing chamber at the same geometric perimeter in a symmetrical configuration of the inlet ducts, the effective stroke length is gas from the opening of each inlet duct in the mixing chamber. The geometric distance of each gas flow flow path to the start of the outlet duct. It is preferable that each gas flow be treated as a laminar flow, whereby the stroke length is substantially determined by the flow line.
Mixing of each gas stream is substantially caused by lateral diffusion in the first mixing chamber and multiple deflections of each gas stream. The first gas deflection element arranged in the first mixing chamber can be configured to have the property of substantially extending the flow path. The arrangement of the first gas deflection elements in the first mixing chamber is preferably symmetrical corresponding to the star arrangement of the gas inlet ducts so that each gas flow flows along at least a uniform flow path. It will be. The first gas deflection element can be configured such that each gas flow spirally passes through an annular cylindrical first mixing chamber. Therefore, each gas flow has a kinetic component in a direction intersecting the extending surface of the inlet plane. However, they also have kinetic components in the direction along the extending plane. Circular or spiral motions are preferably formed in these directions. Thus, each gas stream flows through the first mixing chamber along a screw-like line, eg, upwards from the floor, along the virtual axis of the first mixing chamber. A second mixing chamber can be provided inside the first mixing chamber. The second mixing chamber can be composed of tubes arranged concentrically. Therefore, the first mixing chamber forms a peripheral mixing chamber, and the second mixing chamber forms a central mixing chamber.

Each gas stream is integrated into a premixed first gas stream in the first mixing chamber, which passes through an overflow barrier. The overflow barrier can be the inner wall of the first mixing chamber and the end edge of the inner pipe constituting the outer wall of the second mixing chamber. The second mixing chamber is further preferably provided with a second gas deflection element, whereby the gas stream that has crossed the overflow barrier and entered the second mixing chamber is redirected one or more times. The second gas deflection element can be configured and arranged to form a vortex. It is preferred that the first gas deflection element is formed and configured to redirect the layered gas flow one or more times, while the second gas deflection element is arranged in a vortex-generating form. Therefore, the second gas deflection element produces a spiral second gas stream consisting of all the respective gas streams.

The gas flow passing through the second mixing chamber exits from the second mixing chamber through the gas outlet duct, in which case the gas outflow direction preferably intersects the gas inflow direction. is there. Therefore, it is preferable that the gas outlet duct has an extending direction oriented so as to intersect the extending surface of the gas inlet plane. The walls of the two mixing chambers can be composed of cylindrical and concentric tubes. The virtual axis of the tube extends crossing the gas inlet plane. Gas flows in opposite directions are formed in the two pipes.

The gas source can be a vaporization source. These contain solid or liquid initiators, which are made into gas form by heating the heat of vaporization. These vaporized starting materials are transported to the first mixing chamber through each inlet duct using a quantifiable transport gas. Preferably, each gas stream flows from the inlet duct into the first mixing chamber with an average flow velocity equal to each other. The flow velocity of each gas flow can be adjusted using a mass flow regulator.
However, the gas source may be an aerosol vaporizer. In this case as well, the gas form can be obtained by heating the heat of vaporization to a liquid or solid starting material. The mass flow of steam can be controlled by the temperature of the vaporized surface on the one hand, but can also be controlled by the transport gas flow on the other hand.

According to the present invention, it is presented that the residence time of each gas in the gas mixer and the residence time of each gas in the region between the gas source and the gas inlet member of the CVD reactor are substantially the same length. To. Their times should be up to 10 ms different from each other. Preferably, the gas dwell time in the gas mixer does not exceed 100 ms. However, in another aspect of the device, the first mixing chamber can have a flow barrier, which creates a vortex. The second mixing chamber can also have a flow barrier. However, it can also have a flow deflection element for the formation of laminar flow.
Examples of embodiments of the present invention will be described with reference to the accompanying drawings shown below.

FIG. 1 is a schematic cross-sectional view of a CVD or PVD reactor provided with an interlocking gas mixer. FIG. 2 is a cross-sectional view taken along the line II-II of FIG. FIG. 3 is a diagram showing a second embodiment of the gas mixing device. FIG. 4 is a plan view of the gas mixing device of FIG. FIG. 5 is a perspective view of a third embodiment in which the gas mixing device is formed of a U-shaped pipe. FIG. 6 is a side view of the gas mixing device shown in FIG. FIG. 7 is a plan view of the gas mixing device shown in FIG. FIG. 8 is a perspective view of a fourth embodiment of the gas mixing device. FIG. 9 is a plan view of the gas mixing device shown in FIG. FIG. 10 is a cross-sectional view taken along the line XX of FIG. FIG. 11 is a cross-sectional view taken along the line XI-XI of FIG. FIG. 12 is a plan view of a fifth embodiment of the gas mixing device. FIG. 13 is a side view of the gas mixing device shown in FIG. FIG. 14 is a cross-sectional view taken along the line XIV-XIV of FIG. FIG. 15 is a cross-sectional view taken along the line XV-XV of FIG. FIG. 16 is a cross-sectional view taken along the line XVI-XVI of FIG. FIG. 17 is a cross-sectional view taken along the line XVII-XVII of FIG.

Examples of embodiments of the present invention will be described below with reference to the accompanying drawings.
1 and 2 show a first embodiment of the present invention. The airtight and evacuable reactor housing 1 has a gas inlet member 5 having a gas dispersion space 7 and an outgassing plate inside, and the outgassing plates are arranged like a plurality of shower heads. The gas discharge hole 6 is provided, the gas discharge hole faces the process chamber 2, and the substrate 4 to be coated is placed on the floor of the process chamber. The substrate 4 is placed on a susceptor 3 which can be heated to the process temperature by a heater or cooled from the process temperature by a cooling device. The susceptor 3 is surrounded by an annular gas outlet member 9 connected to the vacuum pump 10, and the vacuum pump can adjust the total pressure inside the process chamber 2 or the reactor housing 1.

The process gas is supplied to the gas inlet member 5 through the gas outlet duct 8 which penetrates the ceiling of the reactor housing 1 and extends inward.

The gas outlet duct 8 is connected to the floor 20 of the housing of the gas mixer, and the floor can be arranged directly above the upper wall of the reactor housing 1. The gas mixer can be firmly connected to the upper wall of the reactor housing 1. The upper wall can be a carrier for the gas mixer.

The gas mixing device is a cylindrical housing, and the floor 20 and the ceiling 17 located on the opposite side of the floor 20 each have a circular disk shape. The housing of the gas mixer has a cylindrical outer wall 18 formed from a first tube. The second pipe 19 is arranged inside and its lower end is firmly connected to the floor 20. The cavity of the inner pipe 19 is connected to the gas outlet duct 8. The upper edge of the inner tube 19 projects freely into the cavity of the outer tube 18 to form an overflowable edge.

The star-shaped inlet ducts 22 adjacent to the floor 20 allow different process gases to be supplied to different peripheral positions in the gas mixer. In this embodiment, four equiangular inlet ducts 22 are provided, each of which is connected to a gas source 21. The gas source 21 is a vaporizer in which a solid or liquid starting material is vaporized by heating. The steam thus formed is supplied to the gas mixing chamber through the inlet duct 22 using the transport gas supplied to the supply duct 23.

The gas mixing device has a first mixing chamber 12 that is isolated from the outside by the outer pipe 18 and isolated from the inside by the inner pipe 19. The first mixing chamber 12 has a plurality of gas deflection elements 13 arranged one above the other. The gas deflection element 13 is arranged so that each gas flow entering the first mixing chamber 12 from the inlet duct 22 is a substantially spiral flow, preferably a laminar flow. By arranging the first gas deflection element 13 symmetrically corresponding to the symmetry of the arrangement of the inlet duct 22, each gas flow sent from the inlet duct 22 and flowing through the first mixing chamber 12 is similar. It will have a flow pattern. In that case, a spiral flow line is formed, along which the gas moves upward from the floor 20 to the ceiling 17, especially through a plurality of curved surfaces of the inner pipe 19. There, a gas stream composed of all the gas streams flows over the overflow barrier 14 formed by the edge of the pipe. This is a gas stream that has already been premixed in the first mixing chamber 12.

The premixed gas flow is turned 180 ° in the region of the overflow barrier 14 and then flows from the ceiling 17 to the floor 20 through the second mixing chamber 15 formed from the inner pipe 19. .. The second mixing chamber 15 has a second gas deflection element 16 which is configured and arranged to generate a vortex. For example, the gas deflection element 16 has a gas cleavage edge behind which a vortex can grow. The gas deflection element 16 can be a flow barrier. Therefore, there is a vortex of the first gas flow in the second mixing chamber 15. The spiral second gas flow formed in this way contains the gas of all the gas flows, and exits from the floor 20 of the second mixing chamber 15 to the gas outlet duct 8 to the gas of the gas inlet member 5. Enter the distributed space 7. Coal gas is supplied to each gas source 21 or each inlet duct 22 so that the average gas velocity in the opening cross section of each inlet duct 22 to the first mixing chamber 12 is the same. As a result, the gas from each inlet duct 22 flows into the first mixing chamber 12 with the same average flow velocity.

In the second embodiment shown in FIGS. 3 and 4, a total of eight inlet ducts 22 are arranged on a common gas inlet plane, which extend in a star shape toward the center of the gas mixer. ing. The first mixing chamber 12 arranged on the outer side in the radial direction has a gas deflection element 13, whereby the first mixing chamber 12 extending in the shape of a spiral passage is formed. The edge of the first mixing chamber 12 is formed by an overflow barrier 14, to which a cylindrical inner second mixing chamber 15 is connected. Further, the first mixing chamber 12 is arranged with a stepped barrier 13', which can have a function of deflecting the gas while still vortexing the gas. Similar factors that affect the gas flow can also be placed in the second mixing chamber.

3 and 4 show inlet ducts 22 with different cross-sectional areas. It is preferable that the process gas passes through the inlet duct 22 having a larger cross-sectional area, or the transport gas carried with the process gas passes through. It is preferred that only the diluent gas, i.e. the transport gas, pass through the inlet duct 22'with a smaller cross-sectional area. An additional inlet duct 22'in which no process gas is introduced can be used to create a vortex in the mixing chamber. The transport gas or dilution gas supplied through the additional inlet duct 22'does not have to match the effective stroke length of the process gas supplied through the inlet duct 22 with respect to its effective stroke length.

In the third embodiment shown in FIGS. 5 to 7, the housing of the mixing device is U-shaped. The first U-leg portion of the housing forming the tubular first mixing chamber 12 has a first inlet duct 22 arranged on the first plane and a second plane extending parallel to the first plane. The arranged second entrance duct 22'opens. In this case as well, a total of eight gas inlet ducts 22 and 22'connected to the source open to the first mixing chamber, and the first mixing chamber is the first gas in the form of protrusions protruding from the inner wall of the pipe. It has a deflection element 13. They are semi-circular protrusions, provided with a straight free edge, and project to the center of the tube forming the first mixing chamber 12.

The U-bridge portion of the U-shaped pipes 12 and 15 forms an overflow barrier 14. Again, a semi-circular gas deflection element 24 projects into the cavity cross section of the U-shaped tube, the gas deflection element comprising a free end edge extending through the center of the tube.

The pipe leg portion formed parallel to the first mixing chamber 12 forms the second mixing chamber 15, and also has a gas deflection element 16 inside the second mixing chamber 15. The free end edges of the gas deflection element 13 extend substantially parallel to each other in the first mixing chamber, whereas the free end edges of the gas deflection plate 16 projecting intersecting the gas flow extend in a cross shape. Exists.

In the present embodiment, the gas deflection elements 13, 16 , and 24 are formed by a flat flat plate connected to the inner wall of the pipe over a half circumference. The flat plates intersect and extend in the flow direction.

8 to 11 show a fourth embodiment of the mixing device, which has eight gas inlet ducts 22 and is arranged on a common inlet plane. A cylindrical housing that intersects the entrance plane extends. It has an outer tube 18 and an inner tube 19. The inner pipe 19 forms an overflow barrier 14 by a free edge. The gas inlet duct opens into the first mixing chamber 12 isolated from the outside by the outer pipe 18 near the floor 20 of the shaft and has a gas deflection element 13 only in the upper region, i.e. near the overflow barrier 14. .. These gas deflection elements 13 direct each gas flow passing through the first mixing chamber 12 in the axial direction onto the spiral flow path, along which each gas flow reaches the space below the ceiling 17, and each gas flow. Is suddenly turned 180 ° beyond the overflow barrier 14.

The inner second mixing chamber 15 has a large number of gas deflection elements 16 arranged one above the other in the flow direction. These are bent parts that cause multiple stages of gas deflection. These parts are mounted on the inner wall of the inner tube 19 to create a vortex of gas flow through the inner mixing chamber 15, which is second through the gas outlet duct 8 in the axial direction of the cylindrical configuration. Exit from mixing chamber 15. The gas deflection elements 16 have the same configuration as each other. It can be an attachment that is supported by each other, with one placed on top of the other. Therefore, they are configured to be supported on the inner wall of the tube 19.

Again, different inlet ducts are provided. An inlet duct 22 with a larger diameter allows the process gas or the transport gas carrying the process gas to pass through, while an additional inlet duct 22'with a smaller cross section allows only the transport gas or dilution gas to pass. Be done.

The fifth embodiment shown in FIGS. 12 to 17 has a total of eight star-shaped inlet ducts 22 arranged on the inlet plane. The inlet ducts 22 have the same configuration as each other and have an inner diameter that gradually increases in the flow direction. The inlet duct 22 is further connected to an adjacent inlet duct 22 via an intersecting duct 25.

In this case as well, the two tubes 18 and 19 arranged concentrically with each other form the outer first mixing chamber 12 and the inner second mixing chamber 15, and the outer first mixing chamber 12 enters at the bottom. The gas to be mixed is supplied through the duct 22. The first mixing chamber 12 is provided with a first gas deflection element 13 that deflects the gas flow in the circumferential direction. The gas stream is directed by the deflection element 13 many times in different deflection directions so that it flows clockwise, for example, in the first mixing chamber 12 in the first height region of the first mixing chamber 12 and subsequently. In the height region, it flows counterclockwise through the first mixing chamber 12. Since the clockwise or counterclockwise flow motion overlaps with the axial flow component of the cylindrical tube, each gas flow coming out of the inlet duct 22 and premixed inside the first mixing chamber 12 is the first. It reaches the upper region of one mixing chamber 12 where it flows 180 ° around two opposing overflow barriers 14 into the central second mixing chamber 15.

The central second mixing chamber 15 is again provided with a second gas deflection element 16 formed of a flat plate material capable of having a curved structure, which causes a vortex of gas passing through the second mixing chamber 15. Give rise.

In all the embodiments described above, the gas deflection element is such that each gas flow passes from its gas source 21 to the gas inlet member 5 with substantially the same effective stroke length, taking into account the length of the inlet duct 22. 13 and 16 are configured and arranged.

A transport gas flow is supplied to each of the supply ducts 23 of the gas source 21. Also in this case, the transport gas flow is quantified so that the gas inside the mixing system has the same staying time on those strokes from the gas source 21 to the gas inlet member 5. The individual dwell times should not differ more than 10 ms, in which case the total dwell time is preferably at most 100 ms. It is preferable that the gas flow through the inlet duct 22 is set within an acceptable range so that the gas enters the mixing chamber at the same average flow rate and passes through the mixing chamber or the entire gas mixing device at the same time. Is. It is best if the dwell times differ by less than 10 ms, for example up to 2 ms or 5 ms.

Gas mixing can be performed under atmospheric pressure. However, gas mixing is preferably carried out in a pressure range between 1 mbar and 500 mbar.

The pressure difference between the gas source 21 and the gas inlet member 5 is less than 1 mbar, preferably less than 0.2 mbar. The diameter and height of the gas mixer are in the range of 200 mm to 700 mm.

The above description contributes to the description of the invention as a whole by the present application, and they independently advance the prior art by at least a combination of the following features. That is:

The gas supply device is characterized in that the effective stroke lengths of the gas flows from the gas source 21 to the gas inlet member 5 are the same as each other.

The gas supply device is such that the inlet duct 22 is located on the inlet plane and is specifically directed to a common center and / or extends in a direction in which the gas outlet duct 8 intersects the inlet plane and / or gas. It is characterized in that the flow can be turned 180 ° by the overflow barrier 14.

The gas supply device includes a first gas deflection element 13 in which the first mixing chamber 12 is a premixing chamber and preferably causes a layered direction change of each gas flow, and / or a second mixing chamber 15. Is a vortex flow generation chamber, and the second mixing chamber 15 is provided with a second gas deflection element 16 for generating a second vortex gas flow.

Gas supply apparatus, the first or second gas deflecting elements 1 3, 16 is characterized in that it is arranged on top of each other at a plurality of stages in the flow direction.

The gas supply device is characterized in that the first and second mixing chambers 12, 15 are formed from concentric tubes 18, 19, which are passed by a reverse flow.

The gas supply device is characterized in that the diameter of the first or second mixing chambers 12 and 15 is shorter than the axial height of the first or second mixing chambers 12 and 15.

The gas supply device is characterized in that a gas supply device including two mixing chambers 12, 15 and a gas source 21 is arranged vertically above the process chamber 2, particularly directly above the upper wall of the reactor housing 1. And.

The method is characterized in that the effective residence time of the gas on the stroke between the gas source 21 and the gas inlet member 5 differs by up to 10 milliseconds.

The method is characterized in that the effective residence time of the gas on the stroke between the gas source 21 and the gas inlet member 5 is shorter than 100 milliseconds.

In the method, the first gas deflection element 13 arranged in the first mixing chamber 12 deflects each gas flow in a particularly layered manner, and / or the second gas deflection element 16 arranged in the second mixing chamber 15 particularly. It is characterized by generating a spiral second gas stream.

The method is characterized in that the gas flow in the inlet duct 22 is set so that each gas flow exits the respective inlet duct 22 at the same average gas velocity.

All disclosed features are essential in the present invention (in their own right, but in combination with each other). In the disclosure of the present application, the content of the relevant / attached priority documents (copy of the prior application) is also included herein as a whole, including the purpose of integrating the features of these documents within the claims of the present application. Dependent claims independently characterize the progress of the present invention with respect to the prior art by their characteristics, and are particularly intended for divisional filing based on these claims.

1 Reactor housing 2 Process chamber 3 Suceptor 4 Substrate 5 Gas inlet member 6 Gas discharge hole 7 Gas dispersion space 8 Gas outlet duct 9 Gas outlet member 10 Vacuum pump 11 Gas mixer 12 1st mixing chamber 13 1st gas deflection element 13 'Barrier 14 Overflow barrier 15 Second mixing chamber 16 Second gas deflection element 17 Ceiling 18 Cylindrical wall 19 Pipe 20 Floor 21 Gas source 22 Inlet duct 22'Inlet duct 23 Supply cable 24 Cross duct

Claims (12)

A CVD or PVD reactor with a process chamber and gas supply.
The gas supply device includes each inlet duct (22) arranged in a star shape around the center and each connected to a vaporized gas source (21), and each inlet duct (22) has the gas source (21). ) Is supplied to the first mixing chamber (12) arranged in an annular cylindrical shape around the center.
In the first mixing chamber (12), a plurality of stages of the first gas deflection elements (13) are arranged so as to overlap each other in the flow direction, so that each gas flow is performed clockwise and counterclockwise in the circumferential direction. Deflection and mixing of each gas flow occur, and a spiral and layered flow occurs.
The gas supply device includes an overflow barrier (14), and a first gas stream consisting of all the gas streams exiting the first mixing chamber (12) is oriented 180 ° beyond the overflow barrier (14). The second mixing chamber (15) is changed and flows into the second mixing chamber (15) arranged inside the first mixing chamber (12), and the second mixing chamber (15) has a plurality of stages arranged so as to overlap in the flow direction. The multi-stage second gas having the same configuration formed from a flat plate material, each of which is a two-gas deflection element (16) with a bend, and one of which is placed and supported on top of the other. The deflection element (16) causes the first gas stream to be deflected multiple times.
The gas supply device includes a gas outlet duct (8), and the gas outlet duct (8) is described from the second mixing chamber (15) to the gas inlet member (5) of the CVD or PVD coating device (1). Centered for gas flow outlet ,
The gas supply device including the two mixing chambers (12, 15) and the vaporized gas source (21) is arranged vertically above the process chamber (2) , and
A CVD or PVD reactor characterized in that the effective stroke lengths of the gas flows from the gas source (21) to the gas inlet member (5) are the same as each other. The first aspect of the present invention is characterized in that the inlet duct (22) is arranged on an inlet plane and faces a common center, and the gas outlet duct (8) extends in a direction intersecting the inlet plane. The CVD or PVD reactor described. The first mixing chamber (12) is a premixing chamber, and the second mixing chamber (15) is a vortex generation chamber, and a vortex-shaped second gas flow is generated in the second mixing chamber (15). The CVD or PVD reactor according to claim 1 or 2, characterized in that a second gas deflection element (16) is provided for this purpose. Claims 1 to 2, wherein the first or second mixing chamber (12, 15) is formed of concentric tubes (18, 19), which are flowed and passed in opposite directions. 3. The CVD or PVD reactor according to any one of 3. Any of claims 1 to 4, wherein the diameter of the first or second mixing chamber (12,15) is shorter than the axial height of the first or second mixing chamber (12,15). The CVD or PVD reactor described in 1. The invention according to any one of claims 1 to 5, wherein the gas source (21) and the mixing chambers (12, 15) are arranged directly above the upper wall of the reactor housing (1). CVD or PVD reactor. The CVD or PVD reactor according to any one of claims 1-6, characterized in that there is an additional gas inlet duct (22') for the inflow of the diluted gas stream. A method for supplying a process gas to a gas inlet member (5) of a CVD or PVD coating apparatus.
A step of supplying each of the plurality of process gases to each gas source (21), and
Each of the plurality of process gases is used as each gas stream, separated from each other gas stream, and is centered from each gas source (21) through each inlet duct (22) arranged in a star shape around the center. The step of sending to the first mixing chamber (12) arranged in an annular cylinder around the
Each gas flow is deflected a plurality of times clockwise and counterclockwise in the circumferential direction by using a plurality of stages of the first gas deflection element (13) arranged so as to overlap in the flow direction in the first mixing chamber (12). And the step of mixing each gas flow and creating a spiral and layered flow,
The first gas stream consisting of all the gas streams is turned 180 ° over the overflow barrier (14) into the second mixing chamber (15) arranged inside the first mixing chamber (12). The steps to overflow and
A plurality of stages of second gas deflection elements (16) arranged so as to overlap in the flow direction in the second mixing chamber (15) , each having the same configuration formed of a flat plate material having a bent portion. And the step of deflecting the gas flow multiple times using the multi-stage second gas deflection element (16), one of which is placed and supported on top of the other .
The gas stream comprising all of the gas stream have a, a step of transmitting to the gas inlet member (5) from the gas outlet duct (8),
A method characterized in that the effective residence time of the gas in the stroke between the gas source (21) and the gas inlet member (5) differs by a maximum of 10 milliseconds. The method according to claim 8, wherein the effective residence time of the gas in the stroke between the gas source (21) and the gas inlet member (5) is shorter than 100 milliseconds. The method according to claim 8 or 9, wherein the second gas deflection element (16) arranged in the second mixing chamber (15) produces a spiral second gas flow. The gas flow in the inlet duct (22) is according to any one of claims 8 to 10, wherein each gas flow is set to exit the respective inlet duct (22) at the same average gas velocity. the method of. The method of any of claims 8-11, wherein the diluent gas stream is supplied through an additional inlet duct (22').

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