JP6800236B2 - How to inspect the gas separation quality of the gas separation passage in the vacuum chamber, and the vacuum processing equipment - Google Patents

Description

[0001] The embodiments of the present disclosure relate to a thin film processing apparatus, specifically a deposition system, more specifically a roll-to-roll (R2R) deposition system and a method of operation thereof. The embodiments of the present disclosure specifically relate to gas separation in a roll-to-roll deposition system, specifically, gas in a vacuum processing apparatus, for example, between two or more vacuum processing regions in a roll-to-roll deposition system. Regarding the method of inspecting the separation quality. In particular, an embodiment disclosed herein is a method of inspecting the gas separation quality of a gas separation passage extending between a first vacuum processing region and a second vacuum processing region in a vacuum chamber. , And vacuum processing equipment and vacuum deposition equipment for processing substrates with improved gas separation quality.

The treatment of flexible substrates such as plastic films or foils is in high demand in the packaging, semiconductor and other industries. The treatment can include coating the flexible substrate with a desired material such as metal. Systems performing this task generally include processing drums, such as cylindrical rollers, that are coupled to a processing system to transport the substrate on which at least a portion of the substrate is processed. Roll-to-roll coating systems can provide high throughput systems.

Evaporation processes, such as thermal evaporation processes, can typically be utilized to deposit a thin layer of metal that can be metallized on a flexible substrate. However, roll-to-roll deposition systems are also experiencing a strong increase in demand in the display and photovoltaic (PV) industries. For example, touch panel elements, flexible displays, and flexible PV modules are increasingly required to deposit the appropriate layers within a roll-to-roll coater, specifically at low manufacturing costs. Such devices typically have several layers that can be manufactured using a CVD process, specifically a PECVD process.

The combination of several CVD, PECVD and / or PVD sources acting with different mixed gases and / or at different working pressures in the vacuum chamber avoids the effects of mutual contamination in subsequent processing and is long-term. Face the need for good process gas separation to ensure process stability. For example, the first process gas can be used in the first vacuum processing region and the second process gas can be used in the second adjacent vacuum processing region. The excellent gas separation factor between the first and second vacuum regions not only prevents contamination of the second material layer on the substrate by the first material particles, but also between the first and second materials. It can also be beneficial to prevent unwanted chemical reactions.

In some roll-to-roll coating systems, the vacuum treatment area, eg, the sputtering section, can be separated by a slit following the curvature of the coating drum. Gas separation strongly depends on the geometric arrangement of the gas separation passage between the coating drum and the gas separation unit. An excellent gas separation factor can be achieved if the gas separation passage comprises a slit having a narrow slit width and yet having a slit width that allows transfer of the substrate through the slit. The slit width may depend on the adjustment of the gas separation unit, the thickness of the substrate, and the temperature of the coating drum.

Therefore, although the process gas flow rate through the gas separation passage is low, it may be reasonable to check the gas separation passage regularly to ensure that the substrate passes through the gas separation passage. The conventional geometric dimensions of the gas separation passage may not be sufficient.

Therefore, it is possible to provide a reliable method for inspecting the gas separation quality of the gas separation passage extending between the vacuum processing regions in the vacuum chamber so that the gas separation passage can be appropriately adjusted. desirable.

In light of the above, there is provided a method of inspecting the gas separation quality of the gas separation passage in the vacuum chamber. Further provided are a vacuum processing apparatus, a vacuum deposition apparatus, and a method for operating the vacuum deposition apparatus.

According to one aspect of the present disclosure, a method of inspecting the gas separation quality of a gas separation passage extending between a first vacuum processing region and at least one second vacuum processing region in a vacuum chamber. However, provided, the gas separation passage is configured as a substrate passage while reducing the gas flow between the vacuum processing regions. The method involves introducing the test gas into the first vacuum treatment region and measuring the first content of the test gas in the background gas in at least one second vacuum treatment region. Including.

According to a further aspect, there is provided a vacuum processing apparatus for carrying out the methods disclosed herein in detail. The vacuum processing apparatus is a vacuum chamber; a first vacuum processing region, at least one second vacuum processing region, and a gas extending between the first vacuum processing region and at least one second vacuum processing region. A gas separation passage that is a separation passage and is configured as a substrate passage while reducing the gas flow from the first vacuum treatment region to at least one second vacuum treatment region; in the first vacuum treatment region. It includes a first gas inlet into which the test gas is introduced; as well as a test gas sensor configured to measure the first content of the test gas in the background gas in at least one second evacuation region.

According to yet another aspect, a vacuum deposition apparatus is provided for carrying out the methods disclosed herein in detail. The vacuum depositor is provided in a vacuum chamber; a first vacuum processing region and at least one second vacuum processing region located within the vacuum chamber; a first vacuum processing region, and the first material is provided on the substrate. A first source configured to deposit a thin layer, and a second provided in at least one second vacuum region and configured to deposit a thin layer of second material on the substrate. Source of deposit; a substrate support having a substrate support surface for guiding the substrate from the first vacuum region to at least one second vacuum region along the gas separation passage and vice versa; A first gas inlet that introduces the test gas into the vacuum region; as well as a test gas sensor configured to measure the first content of the test gas in the background gas in at least one second vacuum region. including.

In some embodiments, the vacuum depositor is a roll-to-roll deposit system, specifically a roll-to-roll deposit system that includes at least one CVD deposit source.

[0013] According to still another aspect, it includes inspecting the gas separation quality of the gas separation passage arranged between the first vacuum processing region of the vacuum chamber and at least one second vacuum processing region. , A method of operating a vacuum deposition apparatus is provided, the gas separation passage is configured as a substrate passage and tested while reducing the gas flow from the first vacuum processing region to at least one second vacuum processing region. gas is introduced into the first vacuum processing area, the first content of the test gas is measured by the background gas present in at least one second vacuum processing area. The method adjusts the gas separation passage according to the measured content and guides the substrate from the first vacuum processing region to at least one second vacuum processing region along the gas separation passage. Further comprising depositing a first material film on the substrate in the first vacuum processing region and depositing a second material film on the substrate in at least one second vacuum processing region.

Further aspects, advantages, and features of the present disclosure are apparent from the dependent claims, the specification, and the accompanying drawings.

A more detailed description of the present disclosure, briefly summarized above, may be made with reference to embodiments so that the above-listed features of the present disclosure can be understood in detail. The accompanying drawings relate to embodiments of the present disclosure and are described below. Typical embodiments are depicted in the drawings and will be detailed in the following description.

FIG. 6 shows a schematic cross-sectional view of a vacuum processing apparatus for processing a substrate according to the embodiment described herein, which can be operated to inspect the gas separation quality of the gas separation passage according to the method described herein. .. FIG. 6 shows a schematic cross-sectional view of a vacuum processing apparatus for processing a substrate according to the embodiment described herein, which can be operated to inspect the gas separation quality of the gas separation passage according to the method described herein. .. FIG. 6 shows a schematic representation of a roll-to-roll depositor according to an embodiment described herein, which can be operated to inspect the gas separation quality of a gas separation passage according to the methods described herein. FIG. 6 shows a schematic representation of a roll-to-roll depositor according to an embodiment described herein, which can be operated to inspect the gas separation quality of a gas separation passage according to the methods described herein. It is a schematic diagram for demonstrating various gas flows in a vacuum processing apparatus operating according to the method described herein. It is sectional drawing of the roll-to-roll hot wire CVD deposition apparatus (HWCVD system) operating according to the method described in this specification. It is a flow chart which shows the method of inspecting the gas separation quality of a gas separation passage by embodiment described in this specification. It is a flow chart which shows the method of operating the vacuum deposition apparatus for depositing a thin film on a substrate according to the embodiment described in this specification.

Next, various embodiments are referred to in detail, one or more examples of which are shown in each figure. Each example is provided for illustration purposes and does not imply any limitation. For example, features illustrated or described as part of one embodiment may be used in other embodiments or in combination with other embodiments to generate additional embodiments. The present disclosure is intended to include such changes and modifications.

In the following description of the drawings, the same reference numbers refer to the same or similar components. In general, only the differences with respect to the individual embodiments are described. Unless otherwise stated, the description of one part or aspect in one embodiment also applies to the corresponding part or aspect in another embodiment.

FIG. 1 shows a vacuum processing apparatus 1 for processing a substrate which is a flexible substrate such as a web according to the embodiment described in the present specification. The vacuum processing apparatus 1 includes a vacuum chamber 2, a first vacuum processing region 10 in the vacuum chamber 2, and a second vacuum processing region 12 in the vacuum chamber 2. The vacuum chamber 2 is provided so that a vacuum, that is, a pressure lower than atmospheric pressure, for example, less than 10 mbar or less than 1 mbar, can be generated in the vacuum chamber 2. The substrate can be treated using various vacuum processing techniques, specifically vacuum deposition techniques, for example, a thin film can be deposited on the substrate.

As used herein, the "board passage" has a size suitable for guiding the board from the first vacuum region to the second vacuum region and / or vice versa. It can refer to a passage such as an opening or slit between two evacuation areas. The substrate may be a thin substrate, eg, a film or web having a thickness of less than 1 mm or less than 0.5 mm. Therefore, the size of the passage may be small in the thickness direction of the substrate, for example, 2 mm or less, 1 mm or less, or 0.5 mm or less. The passage can be formed between the substrate support for guiding the substrate and the wall portion of the vacuum processing region. In some embodiments, the lateral dimensions of the aisle essentially correspond to the lateral size of the substrate. For example, the lateral dimension of the passage may be 30 cm or more, or 1 m or more.

The "background gas" in one of the vacuum treated regions may be defined as the gas present in each vacuum treated region. The background gas may be composed of, for example, components of a separation gas (eg, an inert gas), a process gas, a test gas, a purge gas, and / or additional residual gas. When carrying out the methods described herein, the background gas can primarily include separated gases.

As used herein, "vacuum processing area" refers to an area within the main volume of a vacuum chamber that can be used to process a substrate, where processing contacts the surface of the substrate with process gas. Can include letting. The vacuumed area may be separated from the main volume of the vacuum chamber by a wall section, but may still communicate with the main volume via a gas separation passage. The vacuum treatment area may be at least partially defined by the source housing of the deposit source located within the vacuum chamber.

The vacuum processing technique can include introducing the first process gas into the first vacuum processing region 10 so that the first process gas can chemically or physically interact with the substrate. .. Further, the vacuum processing technique can include introducing a second process gas into the second vacuum processing region 12 so that the second process gas can chemically or physically interact with the substrate. The second process gas can be different from the first process gas. Often, to prevent unwanted chemical reactions between different process gases and / or to prevent contamination of the first material layer on the substrate by the second material component, or vice versa. It is necessary to consider the gas separation between the first and second vacuum processing regions.

The process gas is utilized to deposit a film on the substrate by at least one of precursor gas, reaction gas, inert gas, etching gas, CVD, PVD, PECVD, sputtering, HWCVD or similar deposition techniques. It can contain at least one or more of a gas to be produced, a gas for etching the deposited layer, and a gas for doping the deposited layer.

FIG. 1 shows that the first vacuum processing region 10 and the second vacuum processing region 12 are separated by one or more separation walls. A gas separation passage 20 configured as a substrate passage is provided between the first vacuum processing region 10 and the second vacuum processing region 12. Therefore, the substrate may first be processed in the first vacuum processing region 10, transported to the second vacuum processing region 12 along the gas separation passage, and then processed in the second vacuum processing region 12. .. However, the gas separation passage 20 can allow gas flow between the vacuum processing regions. Therefore, the gas separation passage 20 may be configured such that the gas flow between the vacuum processing regions is reduced, but the substrate is still conveyed between the vacuum processing regions. For example, the width of the slit 21 of the gas separation passage 20 shown in FIG. 1 may be 5 mm or less, more specifically 2 mm or less.

Gas separation plays an important role, for example, in utilizing processing techniques with high gas loads in the vacuum processing area of CVD roll-to-roll web coating systems. The operating pressure in at least one of the vacuum processing regions may be within the range of mbar, eg 0.1-5 mbar, more specifically about 1 mbar.

Gas separation can be improved by using a separation gas stream that prevents unwanted species of each process gas from flowing (diffusing) into the adjacent vacuum treatment area through the gas separation passage. .. However, the separation gas further increases the background pressure in each vacuumed area.

The quality of gas separation between two or more evacuation regions can be periodically checked or inspected to ensure the excellent properties of the deposited membrane. Checking each gas separation factor at a low background pressure, for example at a background pressure of less than ^10-3 mbar, is within the second vacuum region when the gas is introduced into the first vacuum region. It may be possible by measuring the (total) pressure rise and vice versa. However, when measuring the gas separation coefficient of many digits while the background pressure is within the range of mbar, for example> 0.1 mbar, it can be difficult to measure the total pressure.

According to the method of inspecting the gas separation quality of the gas separation passage 20 described herein, the test gas 31 is introduced into the first vacuum processing region 10 and at least one second vacuum processing region. The first content 33 of the test gas in the background gas 32 present in 12 is measured. In some embodiments, the measurements are made in a vacuum chamber, for example by a test gas sensor that can operate under vacuum conditions. In some embodiments, measurements are taken outside the vacuum chamber, eg, in the exhaust line of a vacuum pump configured to draw gas from each vacuum processing area, eg, by a test gas sensor that can operate under atmospheric conditions. , Will be done. In other words, the content of the test gas in the background gas 32 is not necessarily measured in the second vacuum processing region, but the background gas 32 is derived from the vacuum chamber where the measurement of the test gas content is carried out. It is feasible.

Here, the first vacuum processing region and the second vacuum processing region are interchangeable. In other words, the described method, alternative or additionally, introduces the test gas 31 into the second vacuum region 12 and measures the content of the test gas present in the first vacuum region 10. And can include.

Measuring the first content 33 of the test gas is a measure of the first content (eg, parts per million) of the test gas in the background gas 32 taken out of the second vacuum treated area 12. , Ppm) can be included. For example, the background gas 32 is pumped out of the second vacuum processing area 12, where the first content 33 of the test gas in the background gas is measured. The measured content in the exhaust line of the vacuum pump can correspond to the content in the second vacuum processing region 12 (eg, in ppm).

[0039] In some embodiments, measuring the first content 33 of the test gas is the concentration, partial pressure, molecular density of the test gas in the background gas 32 in the second vacuum treated area 12. It can include measuring (molecule / volume), and measuring at least one of the mole fractions. In some embodiments, the (absolute) pressure in the second vacuum region may be measured. Partial pressure and / or concentration of test gas in the second vacuum region 12 based on the (absolute) pressure in the second vacuum region and the first content 33 of the test gas in the background gas 32. Can be determined.

Gas separation when the determined first content 33 of the test gas in the second vacuum region (eg, expressed in ppm with respect to the background gas 32) is higher than a predetermined threshold. The gas separation quality of the aisle may be defined as inadequate. In this case, the gas separation passage may, for example, adjust the slit width of the gas separation passage, change the flow rate of the separated gas in the gas separation passage, or one or more vacuums connected to a vacuum chamber or vacuum processing region. It may be adjusted by at least one of changing the vacuum pumping speed of the pump.

The first content 33 of the test gas can be measured by the test gas sensor 50, a sensor specifically configured to measure the test gas. This is because it is not sufficiently sensitive to simultaneously analyze various gases that may be present in the background gas 32 in the second vacuum processing region 12, for example by the residual gas analyzer RGA. This is because it does not provide a realistic value at a high background pressure of more than 1 mbar. In particular, operating a residual gas analyzer at high background pressure can be difficult. On the other hand, a particular test gas sensor 50 specifically configured to measure the test gas may be sensitive and capable of operating at high background pressures such as 0.1 mbar and above, or 1 mbar and above.

If the measured content 33 of the test gas is below a predetermined threshold, the gas separation quality may be defined as sufficient and a vacuum processing system is used to process the substrate. May be good.

[0043] According to the methods described herein, identification for a very small content of a particular test gas (eg, expressed in parts per million) or background pressure (which can be as high as 5 orders of magnitude). Very small partial pressures of the test gas can be measured, in particular by using a specific test gas sensor.

[0044] In some embodiments described herein, sensors with very high sensitivity to a particular test gas are used. For example, in some embodiments that can be combined with other embodiments described herein, optical or spectroscopic test gas sensors can be used.

For example, the test gas sensor can include a light source and a photodetector, and the spectroscopic properties of the test gas, eg, the absorption of the test gas at a characteristic wavelength, are measured. In particular, the test gas sensor can have an infrared source, a measuring chamber, an interference filter, and an infrared detector. The gas to be inspected, including the test gas, passes through the measurement chamber and the absorption of light by the gas can be measured. The filter may be placed in front of the photodetector so that wavelengths other than those specific to the test gas do not advance to the detector. The light intensity may be detected by the detector and converted into a test gas content value, eg, a test gas concentration value. For example, the volume concentration of the test gas may be measured.

[0046] In some embodiments, the test gas sensor may be an infrared gas sensor. Alternatively or additionally, a chemical gas sensor or other gas sensor configured to measure the first content of the test gas may be used.

The test gas 31 can be introduced into the first vacuum processing region 10 through the first gas inlet 30, which can be the process gas inlet of the first vacuum processing region 10. In this way, when inspecting gas separation quality, operating conditions can be mimicked, which can lead to reliable test results. Specifically, the test gas may be introduced into the first vacuum processing region 10 at a predetermined test gas flow rate, which may be a constant flow rate. The test gas is used at time intervals of several seconds, such as 10 seconds or more, more specifically minutes, until an essentially steady gas flow rate is established in the vacuum chamber and / or exhaust line between the vacuum processing regions. In detail, it may be introduced for 5 minutes or more. In particular, the operating conditions during deposition can substantially deviate from the operating conditions in the stopped device, especially if a high gas load is utilized during operation, for example between CVD vacuum processing regions. The methods described herein can mimic operating conditions, thus allowing reliable measurement of separation quality.

The operating conditions can be further mimicked by using a test gas that has properties similar to those of the process gas used during operation, for example during thin film deposition. For example, the molecular weight of the test gas may be similar to the molecular weight of the process gas used during the operation of the vacuum processing apparatus. Alternatively or additionally, the volatility of the test gas may be similar to that of the process gas used. In some embodiments that can be combined with other embodiments described herein, the test gas has a molecular weight of 5 g / mol or more and 500 g / mol or less, specifically 20 g / mol or more and 100 g / mol or less. .. More specifically, the molecular weight of the test gas may be 40-50 g / mol.

[0049] For example, in some cases, helium gas may be too volatile to provide reliable results. In particular, the use of helium as the test gas is effective in principle, but may give conservative values due to the small molecular size and / or molecular weight of helium.

[0050] In some embodiments that can be combined with other embodiments described herein, the test gas is CO ₂ gas. Further, the first content 33 of the test gas may be measured by a CO ₂ sensor, more specifically by an optical or spectroscopic CO ₂ sensor.

The use of CO ₂ gas as the test gas 31 may provide the following advantages. Highly sensitive CO ₂ measurement sensors of 3 ppm or better are commercially available. Since the CO ₂ background pressure of a typical vacuum processor is low, the measurement results are not adversely affected by previously existing CO ₂ molecules. CO ₂ is not toxic and is generally available. CO ₂ operates in an optical measurement system, but sensors for other gases can only operate in the presence of oxygen. In addition, the properties of CO ₂ gas can be similar to those of typically used process gases. The CO ₂ test gas provides very reliable measurement results and can determine the separation quality of the gas separation passage very accurately.

[0052] In some embodiments, the test gas is a gas other than CO ₂ , in particular a non-toxic gas that is commercially available and typically in substantial amounts not present in the vacuum chamber. Can be used.

The first content 33 of the test gas may be measured in the exhaust line 41 of the vacuum pump 42 connected to at least one second vacuum processing region. For example, the test gas sensor may be located in or adjacent to the exhaust line 41 of the vacuum pump 42 configured to exhaust the internal volume of the second vacuum processing region 12. This is because the composition of the exhaust gas exhausted through the exhaust line 41 can be exactly or essentially the same as the composition of the gas present in the second vacuum processing region 12. For example, the second vacuum processing region 12 may include a pumping outlet connected to the vacuum pump 42 so that the second vacuum processing region 12 can be directly pumped out.

During the normal processing operation of the vacuum processor, a purge gas, such as an inert gas, is used to avoid unwanted chemical reactions of reactive process gases that may potentially flow simultaneously through the vacuum pump. It may be supplied to a vacuum pump. The purge gas supply may be switched off when the first content 33 of the test gas is measured in the exhaust line 41 of the vacuum pump according to the method described herein. This is because the purge gas in the vacuum pump may adversely affect the measurement accuracy.

Measuring the first content 33 of the test gas in the exhaust line 41 may have the additional advantage that the sensitivity of the test gas sensor 50 may depend on the absolute gas pressure. Therefore, it may be beneficial to place the test gas sensor 50 at atmospheric pressure.

As shown in FIG. 1, the test gas 31 can be introduced into the first vacuum processing region 10 through the first gas inlet 30, for example, through the process gas inlet. The first vacuum processing region 10 may be exhausted by the first region vacuum pump 43 connected to the internal volume portion of the first vacuum processing region 10. Most of the test gas 31 in the first vacuum processing region 10 is exhausted by the first region vacuum pump 43, and only a small part of the test gas is in the second vacuum processing region along the gas separation passage 20. Can diffuse within 12.

[0057] As further shown in FIG. 1, the gas separation passage 20 may be at least partially configured as a slit 21 between the gas separation wall 22 and the substrate support 80 configured to support the substrate. Good. In some embodiments, the width of the slit 21 is adjustable, for example, depending on the temperature of the substrate support 80 and / or the thickness of the substrate conveyed along the gas separation aisle 20. It may be. In some embodiments, the width of the slit 21 may be within a few millimeters, eg, 5 mm, 2 mm, 1 mm or less than 1 mm.

The portion of the test gas that enters the second vacuum processing region 12 may be exhausted by the vacuum pump 42 connected to the internal volume portion of the second vacuum processing region 12. The first content 33 of the test gas in the background gas 32 of the second vacuum processing region 12 can be measured by the test gas sensor 50 arranged in the exhaust line 41 of the vacuum pump 42.

[0059] FIG. 2 shows a schematic view of a vacuum processing apparatus 5 for substrate processing according to the embodiment described in the present specification. Since the vacuum processing apparatus 5 is generally the same as the vacuum processing apparatus 1 shown in FIG. 1, the above description can be referred to and is not repeated here.

[0060] The vacuum processing apparatus 5 shown in FIG. 2 includes a vacuum chamber 2, and a first vacuum processing region 10 and a second vacuum processing region 12 are arranged in the vacuum chamber 2. A gas separation unit is provided to reduce the gas flow between the vacuum processing regions. The substrate can be conveyed along the gas separation passage 20 between the first vacuum processing region 10 and the second vacuum processing region 12. The gas separation passage may be provided at least partially as a slit 21 between the substrate support 80 and the gas separation unit including the gas separation wall 22. Different layouts of the gas separation unit and the gas separation passage 20 are possible.

[0061] In some embodiments, the first vacuum processing region 10 is exhausted by the first region vacuum pump 43 and the second vacuum processing region 12 is exhausted by the second region vacuum pump 42. .. A test gas sensor 50 is provided to measure the first content 33 of the test gas in the background gas of the second vacuum processing region 12, and the second background of the first vacuum processing region 10 is provided. A second test gas sensor 51 is provided to measure the second content 34 of the test gas in the gas 35. The measurement of the second content 34 of the test gas measures the second content of the test gas in the second background gas 35 taken out or sucked out from the first vacuum processing region 10. Can include that. The above description regarding the measurement of the first content 33 of the test gas in the background gas 32 present in the second vacuum processing region 12 is referred to.

[0062] In some embodiments that can be combined with other embodiments described herein, the test gas sensor 50 has a test gas content in the exhaust gas sucked out of the second vacuum region. Is provided at or adjacent to the exhaust line 41 of the second region vacuum pump 42 to measure. The second test gas sensor 51 is located in or adjacent to the exhaust line of the first region vacuum pump 43 in order to measure the test gas content in the exhaust gas sucked out of the first vacuum processing region. It may be provided. The content of the test gas in the exhaust gas flowing through each exhaust line can be measured.

[0063] In some embodiments that can be combined with other embodiments described herein, the test gas 31 is introduced into the first vacuum region 10, eg, at a constant flow rate. Then, for example, after waiting for 5 minutes or more, the first content 33 is measured by the test gas sensor 50, and the second content 34 is measured by the second test gas sensor 51. The first content 33 can be compared with the second content 34. For example, the ratio between the second content 34 and the first content 33, eg, the partial pressure or content (per millions) of the test gas in the first and second vacuum regions, respectively. It can be measured by calculating the ratio between (represented).

A large ratio between the second content 34 and the first content 33, such as a ratio greater than 10,000, in particular a ratio greater than 100,000, may indicate good gas separation quality. In other words, higher separation factors, greater than 10,000 or greater than 100,000, are beneficial. In some embodiments, if the ratio is less than 100,000, or less than 10,000, the gas separation passage may be adjusted. In some embodiments, for every 100,000 molecules of test gas present in the first vacuum region, for example when the background gas pressures in the first and second vacuum regions are approximately equal. , One molecule or less of the test gas should be present in the second vacuum region. If not, the gas separation passage can be readjusted.

Similarly, the gas separation quality can be measured in the reverse direction, i.e. in the direction from the second vacuum region 12 to the first vacuum region 10. In this case, the test gas may be introduced into the second vacuum processing region 12 through, for example, the second gas inlet 36, which may be the process gas inlet of the second vacuum processing region 12. In this case, the second content 34 of the test gas existing in the first vacuum processing region may be measured by the second test gas sensor 51.

[0066] In some embodiments, there are more than two vacuum regions, for example, three, four or more vacuum regions that can be arranged adjacent to each other along the transport direction of the substrate. , May be arranged in the vacuum chamber 2. The vacuum processing region may be connected via a gas separation passage similar to the gas separation passage 20 described with reference to FIG. More than two, especially all vacuum processing regions, may be provided with test gas sensors for measuring the test gas in each vacuum processing region. Then, the gas separation quality of each gas separation passage between adjacent vacuum processing regions can be similarly inspected. The overall gas separation quality of the vacuum processing equipment can be monitored and corrections can be made if necessary.

[0067] In some embodiments that can be combined with other embodiments described herein, the main chamber test gas sensor 52 contains the test gas in the background gas of the main volume 3 of the vacuum chamber 2. It is provided to measure the amount. For example, the main chamber test gas sensor 52 may be located in the exhaust line of the main chamber vacuum pump.

[0068] According to some embodiments that can be combined with other embodiments described herein, the separation gas 60 is between the first vacuum treatment region 10 and the second vacuum treatment region 12. It is introduced into the gas separation passage 20 of. One or more for introducing the separation gas into the gas separation passage 20 so that the first mainstream direction of the separation gas 60 is opposite to the second mainstream direction of the test gas in at least a part of the gas separation passage 20. Separation gas inlet 61 can be arranged. By introducing a separation gas when operating the vacuum processing apparatus 5, the separation quality between the vacuum processing regions can be improved.

[0069] As mentioned above, operating conditions may be mimicked when performing the method according to the embodiments disclosed herein in order to achieve a reliable indication of gas separation quality. Therefore, it may be beneficial to measure the first content 33 of the test gas while the separation gas 60 is being introduced into the gas separation passage 20. Typical separation gas, in particular inert gas, such as N ₂ can be used. In some embodiments, the flow rate of the separated gas in the gas separation passage may correspond to a typical flow rate under operating conditions. The separated gas flow rate may be, for example, 10 times, 100 times, or a multiplier higher than the test gas flow rate.

[0070] The separation gas 60 may be introduced at more than one separation gas inlet 61. For example, the first separation gas inlet may be provided on the side wall of the first vacuum processing region 10, and the second separation gas inlet may be provided on the side wall of the second vacuum treatment region 12.

As shown in FIG. 2, in some embodiments, the gas separation passage 20 is, for example, two in at least a portion between the first vacuum processing region 10 and the second vacuum processing region 12. In the central portion 25 between the slit portions, it may be opened toward the main volume portion 3 of the vacuum chamber 2.

[0072] Separation quality can be further improved by exhausting from the main pumping outlet 70 connected to the main volume 3 of the vacuum chamber 2. Since the gas separation passage 20 is at least partially open toward the main volume portion 3, most of the test gas flowing along the gas separation passage 20 is connected to the main pumping outlet 70 in the main chamber vacuum pump 71. Exhausted by. Only a small portion of the test gas enters the second vacuum region 12.

[0073] While practicing the method according to the embodiments disclosed herein, the first pressures in the first vacuum region 10 and / or the second vacuum region 12 are 0.1 mbar and 2 mbar. It may be maintained in the range between, especially about 1 mbar. This background pressure may be adjustable by changing the test gas flow rate, by changing the separation gas flow rate, and / or by changing the vacuum pumping rate. In addition, the geometry of the gas separation passage, eg, the width of the slit 21, may be adjusted. A pressure of 0.1 mbar or higher can correspond to the pressure in the vacuum processing region, especially during the operation of the vacuum processing apparatus in a CVD system, for example during thin film deposition.

[0074] In some embodiments, the separation quality can be further improved by keeping the first pressure at a higher level than the second pressure in the main volume 3 of the vacuum chamber 2. In this case, the gas flowing through the gas separation passage 20 tends to enter the main volume portion 3 of the vacuum chamber, where the gas is exhausted by the main chamber vacuum pump 71.

As further shown in FIG. 2, the gas separation passage 20 includes a first slit for separating the first vacuum processing region 10 from the main volume portion 3 of the vacuum chamber 2 and a main volume portion 3 of the vacuum chamber 2. It can include a central portion 25 that is open toward the side and a second slit that separates the main volume portion 3 from the second vacuum processing region 12. In some embodiments, a main pumping outlet 70 is provided to exhaust the main volume 3 of the vacuum chamber 2.

[0076] FIG. 3 shows a schematic cross-sectional view of a roll-to-roll deposition system in which the methods described above can be carried out. The roll-to-roll deposition system is configured as a vacuum deposition apparatus 100 for depositing a thin film on the substrate 106 in at least the first vacuum processing region 10 and the second vacuum processing region 12.

[0077] Similar to the above embodiment, the vacuum processing regions are separated from each other by at least one gas separation unit, and a gas separation passage 20 configured as a passage of the substrate 106 is provided between them. Since the configuration of the gas separation passage 20 and the vacuum processing region can correspond to the configuration of the above embodiment, the above description can be referred to and is not repeated here.

[0078] The substrate 106 processed in the vacuum deposition apparatus 100 disclosed herein may be a flexible substrate, for example a web substrate. Flexible substrates or webs can be characterized as bendable. For example, as described in embodiments herein, the web may be foil or another flexible substrate. However, as described in more detail below, the advantages of the embodiments described herein may also be provided for non-flexible substrates or carriers in other in-line deposition systems. Therefore, a curved or convex substrate support, such as a rotatable coated drum 110 as shown in FIG. 3, or a flat substrate support 80 as shown in FIG. 2, such as a flat conveyor, can be used. it can. Further, the substrate support is not necessarily movable, and the substrate may be movable by other devices during the vacuum processing area.

The vacuum depositor 100 shown in FIG. 3 includes a vacuum chamber 101. Various vacuum deposition techniques can be used to process the substrate 106 or to deposit a thin film on the substrate. As shown in FIG. 3 and as referred to herein, the vacuum depositor 100 may be a roll-to-roll depositor on which the flexible substrate 106 to be guided and processed is placed. However, according to some embodiments that can be combined with other embodiments described herein, the modes, details, and features of gas separation described herein are glass substrates, wafers, or non-glass substrates. It may be flexible or can be applied to other depositors where another substrate provided on a non-flexible carrier is processed.

The flexible substrate 106 of FIG. 3 is guided into the vacuum chamber 101, as indicated by the arrow X. For example, the flexible substrate 106 can be guided from the rewinding station into the vacuum chamber 101. The flexible substrate is directed by a roller 104 to a coating drum 110 configured to support the substrate during processing and / or deposition. As shown in FIG. 3, especially in the case of roll-to-roll depositors, the substrate support can be a coated drum that is rotatable around the drum shaft 111. From the coating drum, the substrate 106 is guided to another roller 104 and exits the vacuum chamber 101, as indicated by the second arrow X.

[0077] The embodiment shown in FIG. 3 includes a first deposit source 130 provided in the first vacuum treatment region 10 and a second deposit source 131 provided in the second vacuum treatment region 12. including. In the vacuum processing region, the substrate 106 is supported by a coating drum during processing. Furthermore, it should be understood that more than two deposition sources can be provided according to further embodiments that can be combined with other embodiments described herein. For example, four, five, six or even more deposit sources can be provided. The vacuum processing region is separated from the adjacent vacuum processing region and from the main volume portion of the vacuum chamber 101 by the gas separation unit 120.

[0078] In some embodiments that can be combined with other embodiments described herein, the first evacuation region 10 is located radially outside the coating drum 110 at a first angular position. , The second vacuum processing region 12 is arranged radially outside the coating drum 110 at a second angular position.

[0079] According to some embodiments described herein, the gas separation unit 120 is configured to have a changing position, as indicated by the arrow Y. The gas separation unit 120 typically includes a wall 122 that prevents gas in one vacuum processing region from entering adjacent regions such as adjacent vacuum processing regions. Further, the gas separation passage 20 may be formed at least partially as a slit 21 between the coating drum 110 and the slit wall 124.

[0080] Similar to the vacuum processing apparatus described above, at least one vacuum processing region includes a gas inlet for introducing a test gas 31, for example, CO ₂ into the vacuum processing region. A test gas sensor 50 is associated with the other vacuum processing region, and the test gas sensor 50 is a test in a first content of test gas in the other vacuum processing region, i.e., background gas taken from each vacuum processing region. It is configured to measure the first content of the gas.

The test gas sensor 50 may be connected to an exhaust line of a vacuum pump provided to exhaust the other vacuum processing region.

Further gas separation passages 121 are arranged on opposite sides of the respective vacuum processing regions. Specifically, each of the flexible substrates 106 can enter the vacuum treatment region along the first gas separation passage and exit the vacuum treatment region along the second gas separation passage.

[0083] For the sake of clarity, details of the gas flow, in particular the details of the separated gas, the separated gas inlet, the gas separation passage and further features are not shown in FIG. In this regard, the above embodiments are referred to.

[0084] In some embodiments, each of the two or more vacuum treatment regions is provided with a gas inlet for introducing a test gas, and each of the two or more vacuum treatment regions is a respective vacuum treatment region. Includes a corresponding test gas sensor for measuring the content of test gas present within. Therefore, the vacuum separation quality between any pair of vacuum processing regions can be inspected and misaligned separation gas passages can be easily found and corrected.

FIG. 4 shows a schematic cross-sectional view of a further roll-to-roll deposition system for carrying out the method according to the embodiments described herein. The roll-to-roll deposition system is configured as a vacuum deposition apparatus 500 for depositing a thin film on the substrate 106 in the first vacuum processing region 10 and the second vacuum processing region 12.

[0086] The vacuum deposition apparatus 500 includes a vacuum chamber 501 having a main volume portion 503, and a first source housing having a first deposition source 510 and a second source housing having a second deposition source 520 The source housing is hermetically attached directly or indirectly to the vacuum chamber 501 by fasteners so that it projects at least partially towards the substrate support within the main volume 503 of the vacuum chamber 501. The substrate support is a coated drum 110 that is rotatable around the drum shaft 111. In some embodiments, the main chamber vacuum pump 71 is connected to a pump outlet provided for direct exhaust of the main volume portion 503.

[0087] The coating drum 110 may be provided with a substrate guide surface for moving the flexible substrate 106 so that it continuously passes through the open front side of the source housing containing the deposition source. The source housing of the first deposition source 510 has a first gas inlet 30 for introducing the process gas or test gas 31 into the first vacuum processing region 10 and a process gas or test from the first vacuum processing region 10. It can include an exhaust outlet for removing gas. Similarly, the source housing of the second deposition source 520 has a second gas inlet for introducing the process gas or test gas into the second vacuum processing region 12 and the process gas or from the second vacuum processing region 12. It can include an exhaust outlet to which a vacuum pump 42 is connected to remove the test gas.

[0088] A test gas sensor 50 for measuring the first content of the test gas existing in the second vacuum processing region 12 is provided.

[089] In some embodiments, a pretreated plasma source 523, such as an RF plasma source, can be provided to treat the substrate 106 with plasma before passing through the deposition source. Alternatively or additionally, the vacuum depositor 500 can include a preheating unit 529 that heats the flexible substrate 106. For example, a radiant heater, an electron beam heater, or any other element for heating the substrate before processing can be provided.

An additional gap sluice 524 may be provided that can ensure vacuum separation between the portions of the vacuum chamber 501. The substrate 106 may be wound from a first roll 528 and transported via several interleaf rollers 525 to a coating drum 110 on which the substrate 106 is coated. The substrate may then be conveyed to the second roll 526 via an additional interleaf roller 525. Further, an interleaf roll 527 may be provided.

The deposit source can be provided as a CVD deposit source, more specifically as a hot wire CVD deposit source. The first gas inlet 30 may include a shower head configured to evenly distribute the process gas or test gas to the first evacuation region.

A separation gas channel (not shown) for introducing a separation gas, eg, an inert gas such as N ₂ , into the gas separation passage 20 at one or more separation gas inlet positions is provided on the side wall of the source housing. It may be provided. Specifically, two or more separation gas inlets configured to introduce the separation gas into the slits of the gas separation passage 20 may be provided along the gas separation passage. The gas separation passage 20 may further include a central portion that opens toward the main volume portion 503 of the vacuum chamber 501. The gas separation quality of the gas separation passage 20 can be improved.

FIG. 5 shows the gas separation passage 20 extending between the first vacuum processing region 10 and the second vacuum processing region 12 when the method described in the present specification is carried out. Shows various gas flows.

[0094] The first region vacuum pump 43 is connected to the first vacuum processing region 10, the second region vacuum pump 42 is connected to the second vacuum processing region 12, and the main chamber vacuum pump 71 is connected. It is connected to the main volume of the vacuum chamber.

[0995] The separation gas 60 may be introduced into the first slit portion and the second slit portion of the gas separation passage 20, and the central portion of the gas separation passage may be open toward the main volume portion 3. Good.

[0906] The test gas 31 may be introduced into the first vacuum processing region 10. The content of the test gas present in the second vacuum processing region 12 may be measured by the test gas sensor 50. In some embodiments, the test gas sensor is located in the exhaust line of the second region vacuum pump 42.

[097] FIG. 6 shows a portion of a roll-to-roll deposition system that can be configured as a hot wire CVD deposition system. The deposition system includes three, four or more deposition sources 510, 520, 530, and the source housing includes a vacuum treatment region, eg, a first vacuum treatment region 10 and a second vacuum treatment region 12. including. A coating drum 110 having a substrate support surface that supports and guides the flexible substrate 106 is provided.

[0998] The source housing including the vacuum processing region is arranged at each angular position radially outward from the coating drum 110 so as to provide a slit between the front wall of the source housing and the coating drum. The slit is a part of the gas separation passage 20 between the vacuum processing regions.

[0099] According to the method described herein, the test gas 31 is the first content of the test gas in the background gas that has been introduced into the first vacuum region and taken out of another vacuum region. The amount is measured. Depending on the measured content, it can be determined whether the gas separation passage should be adjusted. According to some embodiments described herein, a second content of the test gas is measured in the background gas taken from the first vacuum region and the first content is , Compared to the second content.

[00100] The test gas may be a CO ₂ gas, and the test gas sensor may be a specific gas sensor, particularly an optical CO ₂ sensor.

[00101] FIG. 7 shows a flow chart showing a method for inspecting the gas separation quality of the gas separation passage according to the embodiment described in the present specification.

In box 710, the test gas is introduced into the first vacuum treatment region, and in box 720, the first content of the test gas in the background gas in the second vacuum treatment region is measured. To. If the measured content is above a predetermined threshold, the gas separation quality may be inadequate and the gas separation passage can be adjusted.

[00103] FIG. 8 shows a flow chart showing a method of operating a vacuum deposition apparatus for depositing a thin film on a substrate according to the embodiment described in the present specification.

In the box 810, the gas separation quality of the gas separation passage arranged between the first vacuum processing region and the second vacuum processing region of the vacuum chamber is inspected. In box 811 the test gas is introduced into the first vacuum treated region and in box 812 the first content of the test gas in the background gas in the second vacuum treated region is measured. For example, the first content of the test gas is measured in the background gas sucked out of the second vacuum processing area and the gas sensor can be placed in the exhaust line of the vacuum pump.

Introducing the test gas into the first evacuation region can include supplying a continuous test gas stream to the first evacuation region, especially at a constant test gas flow rate. The test gas flow rate may be similar to or consistent with the typical process gas flow rate used to deposit the membrane on the substrate.

[00106] In the box 820, the gas separation passage is adjusted according to the measured content of the test gas. For example, the gas separation passage can be used by adjusting the width of the slits in the gas separation passage, by changing the separation gas flow rate, by changing the pumping rate, and / or by cooling the substrate support and / or the deposition source. Alternatively, it may be adjusted by changing the heating temperature.

[00107] In the box 830, the substrate has a first material film deposited on the substrate in the first vacuum processing region and a second material film deposited on the substrate in the second vacuum processing region. The vacuum processing region of 1 is guided to the second vacuum processing region along the gas separation passage. Placing the first material film may include introducing the first CVD process gas into the first vacuum region, and depositing the second material film may include depositing the second CVD process gas. May include introducing into the second vacuum processing region.

Although the above is intended for embodiments of the present disclosure, other further embodiments of the present disclosure may be conceived without departing from the basic scope of the present disclosure. It is determined by the following claims.

Claims (15)

A method for inspecting the gas separation quality of a gas separation passage (20) extending between a first vacuum processing region (10) and at least one second vacuum processing region (12) in a vacuum chamber (2). The gas separation passage (20) serves as a substrate passage while reducing the gas flow from the first vacuum processing region (10) to the at least one second vacuum processing region (12). It is configured and the method described above
Introducing the test gas (31) into the first vacuum processing region (10) and
The first content (33) of the test gas in the background gas (32) in the at least one second vacuum processing region (12) is configured to measure the test gas (31). Methods including measuring with an optical, spectroscopic or chemical gas sensor. The test gas is a CO ₂ gas, the first content of the test gas (33) is, by optical and CO ₂ sensor or spectroscopic CO ₂ sensor are measured, according to claim 1 Method. The method according to claim 1 or 2, wherein the molecule of the test gas has a molecular weight of 5 g / mol or more and 500 g / mol or less. To measure the second content (34) of the test gas in the second background gas (35) in the first vacuum processing region (10).
The invention according to any one of claims 1 to 3, further comprising comparing the first content (33) of the test gas with the second content (34) of the test gas. Method. The method introduces the separation gas (60) into the gas separation passage (20) between the first vacuum processing region (10) and the at least one second vacuum processing region (12). Any of claims 1 to 4, further comprising, wherein the first mainstream direction of the separated gas (60) is opposite to the second mainstream direction of the test gas in at least a portion of the gas separation passage (20). The method described in item 1. The main volume portion of the vacuum chamber (2) in a part of the gas separation passage (20) between the first vacuum processing region (10) and the at least one second vacuum processing region (12). It is open toward (3), and the above method is
The method according to any one of claims 1 to 5, further comprising evacuating from a main pumping outlet (70) connected to the main volume portion (3). The first pressure in at least one of the first vacuum processing region (10) and the at least one second vacuum processing region (12) is maintained within the range between 0.1 mbar and 2 mbar. The method of any one of claims 1-6, wherein the first pressure is maintained at a higher level than the second pressure in the main volume portion (3) of the vacuum chamber. A vacuum processing device (1) for processing a substrate.
Vacuum chamber (2),
A first vacuum processing region (10), at least one second vacuum processing region (12), and the first vacuum processing region (10) and the at least one second vacuum processing region (12). A gas separation passage (20) extending between them for a substrate while reducing the gas flow from the first vacuum processing region (10) to at least one second vacuum processing region (12). Gas separation passage (20) configured as a passage,
A first gas inlet (30) for introducing the test gas (31) into the first vacuum treatment region (10), and a background gas in the at least one second vacuum treatment region (12). A test gas sensor (50) configured to measure the first content (33) of the test gas in 32).
With
The test gas sensor (50) is an optical, spectroscopic or chemical gas sensor configured to measure the test gas (31).
Vacuum processing device (1). The test gas sensor (50) is located in the exhaust line (41) of the vacuum pump (42) connected to the at least one second vacuum processing region (12), or adjacent to the exhaust line (41). The vacuum processing apparatus according to claim 8, which is arranged. The test gas sensor (50) is a partial optical type CO ₂ sensor, the vacuum processing apparatus according to claim 8 or 9. According to claim 8, the gas separation passage (20) is at least partially configured as a slit (21) between the gas separation wall (22) and the substrate support (80) that supports the substrate. The vacuum processing apparatus according to any one of 10. The substrate support (80) is a coated drum (110) configured to rotate around a drum shaft (111), with the first vacuum processing region (10) at a first angular position. Claim that the coating drum (110) is located radially outside and the at least one second vacuum processing region (12) is located radially outside the coating drum at a second angular position. 11. The vacuum processing apparatus according to 11. The invention according to any one of claims 9 to 12, further comprising one, two, or more separation gas inlets (61) configured to introduce the separation gas into the gas separation passage (20). Vacuum processing equipment. The gas separation passage (20) separates the first vacuum processing region (10) from the main volume portion (3) of the vacuum chamber (2), and the first slit of the vacuum chamber (2). A central portion (25) that is open toward the main volume portion (3) and a second slit that separates the main volume portion (3) from the at least one second vacuum processing region (12). The vacuum processing apparatus according to any one of claims 9 to 13, wherein the main pumping outlet (70) is provided so as to exhaust the main volume portion (3) of the vacuum chamber (2). A vacuum deposition device (100) for depositing a film on a substrate (106).
A vacuum chamber (2), a first vacuum processing region (10) arranged in the vacuum chamber (2), and at least one second vacuum processing region (12).
A first deposition source (130,510) provided in the first vacuum processing region (10) and configured to deposit a thin layer of the first material on the substrate (106), and at least the above. A second deposition source (131,520), provided in one second evacuation region (12) and configured to deposit a thin layer of second material on the substrate (106).
It has a substrate support surface that guides the substrate from the first vacuum treatment region (10) to at least one second vacuum treatment region (12) along the gas separation passage (20), or vice versa. Substrate support (80),
A first gas inlet (30) for introducing the test gas (31) into the first vacuum treatment region (10), and a background gas in the at least one second vacuum treatment region (12). A test gas sensor (50) configured to measure the first content (33) of the test gas in 32).
With
The test gas sensor (50) is an optical, spectroscopic or chemical gas sensor configured to measure the test gas (31).
Vacuum deposition device (100).

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